A method and system for quickly calculating the depth of air hole defects of GIS three post insulators

Abstract

The application discloses a kind of GIS three support insulator pore defect depth fast calculation method and system, comprising: obtaining the first fitting function of target GIS three support insulator under first detection condition;Obtain the near-surface pore defect surface maximum temperature difference of GIS three support insulator to be measured under first detection condition;According to the first fitting function, in combination with the near-surface pore defect surface maximum temperature difference, the defect depth of corresponding near-surface pore defect is inversely solved.The GIS three support insulator pore defect depth fast calculation method and system of the application can effectively detect the pore defect inside GIS three support insulator by infrared imaging technology.In addition, the application can also provide important data support for the maintenance and fault prevention of GIS three support insulator, which helps to reduce the power system failure caused by insulator defect, and ensures the stability and reliability of power supply.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of rapid calculation of GIS three-column insulator air hole defect depth, and particularly relates to a rapid calculation method and system for GIS three-column insulator air hole defect depth. BACKGROUND

[0002] In a gas insulated switchgear (GIS), a three-column insulator is an important structural component, mainly used to support and isolate the conductive parts in GIS, ensuring the safe and stable operation of high-voltage electrical equipment in complex environments. The design and material selection of the three-column insulator are directly related to the performance and reliability of the GIS equipment. The three-column insulator is usually composed of three main insulating columns, with the upper end of each column connected to the conductive parts inside the GIS and the lower end fixed to the GIS shell or base. This three-column structure provides stable mechanical support while effectively isolating the high-voltage conductive parts in the GIS, preventing electrical short circuits or leakage phenomena. The three-column insulator plays a dual role in GIS: on the one hand, they need to withstand mechanical stress, stably supporting the conductive parts in GIS; on the other hand, they must have excellent electrical insulation performance to ensure the normal operation of the equipment under high-voltage conditions. The three-column insulator is usually made of epoxy resin, using molding or casting technology to ensure the integrity of its structure and the uniformity of the material.

[0003] Internal defects such as air bubbles may also occur in the production process of the three-column insulator, which will weaken the mechanical strength of the insulator, reduce its electrical insulation performance, and even cause equipment failure. Existing non-destructive testing techniques such as ultrasonic and X-ray have poor anti-interference ability, complex equipment, and high detection costs. In production operation, when accidents occur, traditional methods are difficult to determine the cause of the accident, and there is a lack of effective prevention measures. In addition, in the production process, the withstand voltage and partial discharge methods can only qualitatively judge the electrical properties of the GIS three-column insulator, and cannot establish the internal relationship between its internal defects and electrical properties, which may lead to the use of defective insulating components in operation, thereby seriously affecting the safety and stability of electrical equipment. The present application aims to use a new type of infrared wave, which has good penetration ability for non-polar, non-metallic and dry materials, to research a GIS three-column insulator defect detection method based on infrared imaging technology, to realize the rapid detection of internal defects of the GIS three-column insulator, and to improve and optimize the production and operation conditions of the GIS three-column insulator. SUMMARY

[0004] This section is intended to introduce the reader to various aspects of the present embodiments and may not be comprehensive or contain all possible embodiments. The section may omit some features or details that are not directly related to the nature of the present embodiments. Some measures may be simplified or omitted in this section, the Abstract, and the Title to purposefully highlight or emphasize certain features to induce the reader to take a further interest in the description.

[0005] In view of the above existing problems, the present application is proposed.

[0006] Therefore, the present application provides a GIS three-strut insulator pore defect depth rapid calculation method and system, which can solve the problems mentioned in the background art.

[0007] To solve the above technical problems, the present application provides the following technical solutions.

[0008] In a first aspect, the present application provides a GIS three-strut insulator pore defect depth rapid calculation method, comprising:

[0009] Obtaining a first fitting function of a target GIS three-strut insulator under a first detection condition;

[0010] Obtaining a near-surface pore defect surface maximum temperature difference of a GIS three-strut insulator to be measured under a first detection condition;

[0011] According to the first fitting function, combined with the near-surface pore defect surface maximum temperature difference, the defect depth of the corresponding near-surface pore defect is inversely solved.

[0012] As a preferred scheme of the GIS three-strut insulator pore defect depth rapid calculation method of the present application, wherein: the first fitting function is a relationship function of all defect depths and surface maximum temperature differences under different defect diameters.

[0013] As a preferred scheme of the GIS three-strut insulator pore defect depth rapid calculation method of the present application, wherein: the first fitting function of the target GIS three-strut insulator under the first detection condition comprises:

[0014] Establishing a GIS three-strut insulator near-surface pore calibration defect table, the calibration defect table arranges defect depths and defect diameters in rows and columns of the defect table according to a first arrangement order;

[0015] Obtaining temperature data of the near-surface pore defect surface and the normal area surface under the first detection condition, and calculating a temperature difference vector of the near-surface pore defect surface;

[0016] Filling the calculated temperature difference vector of the near-surface pore defect surface into the defect table to obtain a surface maximum temperature difference matrix.

[0017] As a preferred scheme of the GIS three-column insulator pore defect depth rapid calculation method, the first fitting function is a first fitting function obtained by fitting using a first fitting model.

[0018] As a preferred scheme of the GIS three-column insulator pore defect depth rapid calculation method, the first fitting function is a first fitting function obtained by fitting using a first fitting model.

[0019] The actual temperature difference acquisition module is configured to acquire the maximum surface temperature difference of the near-surface pore defect surface of the GIS three-column insulator to be detected under the first detection condition.

[0020] The actual temperature difference acquisition module is configured to acquire the maximum surface temperature difference of the near-surface pore defect surface of the GIS three-column insulator to be detected under the first detection condition.

[0021] The defect depth calculation module is configured to inversely solve the defect depth of the corresponding near-surface pore defect according to the first fitting function and in combination with the maximum surface temperature difference of the near-surface pore defect surface.

[0022] The defect depth calculation module is configured to inversely solve the defect depth of the corresponding near-surface pore defect according to the first fitting function and in combination with the maximum surface temperature difference of the near-surface pore defect surface.

[0023] The defect depth calculation module is configured to inversely solve the defect depth of the corresponding near-surface pore defect according to the first fitting function and in combination with the maximum surface temperature difference of the near-surface pore defect surface.

[0024] The defect depth calculation module is configured to inversely solve the defect depth of the corresponding near-surface pore defect according to the first fitting function and in combination with the maximum surface temperature difference of the near-surface pore defect surface.

[0025] In a second aspect, the present application provides a GIS three-column insulator pore defect depth rapid calculation system, comprising:

[0026] The fitting function establishment module is configured to acquire a first fitting function of a target GIS three-column insulator under a first detection condition.

[0027] The actual temperature difference acquisition module is configured to acquire the maximum surface temperature difference of the near-surface pore defect surface of the GIS three-column insulator to be detected under the first detection condition.

[0028] The defect depth calculation module is configured to inversely solve the defect depth of the corresponding near-surface pore defect according to the first fitting function and in combination with the maximum surface temperature difference of the near-surface pore defect surface.

[0029] In a third aspect, the present application provides a computer device comprising a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the method as described above when executing the computer program.

[0030] In a fourth aspect, the present application provides a computer readable storage medium, which stores a computer program, and the computer program implements the steps of the method as described above when executed by a processor.

[0031] Compared with the prior art, the present application has the beneficial effects: the present application provides a GIS three-column insulator pore defect depth rapid calculation method and system, obtains a first fitting function of a target GIS three-column insulator under a first detection condition; obtains a near-surface pore defect surface maximum temperature difference of a to-be-detected GIS three-column insulator under the first detection condition; and inversely solves a defect depth of a corresponding near-surface pore defect according to the first fitting function and in combination with the near-surface pore defect surface maximum temperature difference. The GIS three-column insulator pore defect depth rapid calculation method and system can effectively detect the internal pore defects of the GIS three-column insulator through infrared imaging technology. The technical solution not only improves the detection accuracy, but also greatly shortens the detection time, thereby improving the production efficiency and the safety of equipment operation. In addition, the present application can also provide important data support for the maintenance and fault prevention of the GIS three-column insulator, which helps to reduce the power system failure caused by insulator defects and ensures the stability and reliability of power supply. BRIEF DESCRIPTION OF DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor. Among them:

[0033] Figure 1 A method flowchart of a GIS three-column insulator pore defect depth rapid calculation method and system provided for an embodiment of the present application;

[0034] Figure 2 A detailed step flowchart of a GIS three-column insulator pore defect depth rapid calculation method and system provided for an embodiment of the present application;

[0035] Figure 3 A maximum temperature difference-defect depth fitting image schematic diagram of a GIS three-column insulator pore defect depth rapid calculation method and system provided for an embodiment of the present application;

[0036] Figure 4 The internal structure diagram of the computer device of the GIS three-column insulator pore defect depth rapid calculation method and system provided for an embodiment of the application is shown. DETAILED DESCRIPTION

[0037] In order to make the above objectives, characteristics and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor should fall within the scope of protection of the present application.

[0038] Embodiment 1

[0039] Reference Figures 1-4 For the first embodiment of the present application, the embodiment provides a GIS three-column insulator pore defect depth rapid calculation method and system, which comprises:

[0040] In the related art, there are various methods for detecting internal defects of GIS three-column insulators, but these methods often have problems such as long detection time and low accuracy.

[0041] The present application can effectively solve the above-mentioned problems. Next, how to realize the GIS three-column insulator pore defect depth rapid calculation method will be described in detail in combination with multiple embodiments.

[0042] Figure 1 A method flowchart of a GIS three-column insulator pore defect depth rapid calculation method and system is shown, which comprises:

[0043] S101, obtaining a first fitting function of a target GIS three-column insulator under a first detection condition;

[0044] In the embodiment of the present application, the first fitting function is a relationship function of all defect depths and the maximum temperature difference on the surface under different defect diameters.

[0045] In the embodiment of the present application, obtaining the first fitting function of the target GIS three-column insulator under the first detection condition comprises:

[0046] Establishing a GIS three-column insulator near-surface pore calibration defect table, the calibration defect table arranges the defect depths and the defect diameters in the rows and columns of the defect table according to a first arrangement order;

[0047] Obtaining temperature data of the near-surface pore defect surface and the normal area surface under the first detection condition, and calculating a temperature difference vector of the near-surface pore defect surface;

[0048] The calculated near-surface pore defect surface temperature difference vector is filled into the defect table to obtain a surface maximum temperature difference matrix.

[0049] In the embodiments of the present application, the first fitting function is a first fitting function obtained after fitting using a first fitting model.

[0050] In an optional embodiment, according to the defect size and defect depth that may occur in the three-pole insulator in practice, a near-surface pore calibration defect of the GIS three-pole insulator is designed, and the defect depth and the defect size are arranged in a first arrangement order in the rows and columns of the defect table. Defects with the same depth are divided into a calibration group, that is, each row is divided into a calibration group.

[0051] Table 1: GIS three-pole insulator near-surface pore calibration defect example

[0052]

[0053] In an optional embodiment, the first arrangement order can be arranged in a uniform gradient, or in a reverse order of the uniform gradient, or in a right triangle, and the like, which can ensure that the calibration result of the defect is uniformly distributed, thereby ensuring the accuracy of the fitting function and the reliability of the calculation result. In this way, a calibration defect table covering different defect sizes and depths can be obtained, which provides a solid foundation for subsequent defect depth calculation.

[0054] It should be noted that the first fitting model can be an exponential fitting model, a polynomial fitting model, or other suitable mathematical models. When selecting the fitting model, the fitting accuracy and the calculation complexity of the model need to be considered to ensure that the accuracy requirements are met and the calculation efficiency is guaranteed in practical applications.

[0055] In an optional embodiment, when the exponential fitting model is selected as the first fitting model, for each defect diameter, the exponential fitting model is used to fit the numerical relationship between all defect depths z and the surface maximum temperature difference ΔT max of the diameter, and a fitting function formula is formed for each diameter to complete the calibration of the GIS three-pole insulator near-surface pore defect.

[0056] It should be noted that step S101 can effectively obtain the first fitting function of the target GIS three-column insulator under the first detection condition. In actual application, this step is crucial because it provides basic data for subsequent defect depth calculation. By accurately obtaining and calculating the temperature difference vector of the defect surface and associating it with the defect depth, an accurate fitting function can be constructed, thereby realizing rapid calculation of the GIS three-column insulator pore defect depth.

[0057] S102, obtaining the maximum temperature difference of the near-surface pore defect surface of the GIS three-column insulator to be tested under the first detection condition;

[0058] In the embodiments of the present application, obtaining the maximum temperature difference of the near-surface pore defect surface of the GIS three-column insulator to be tested under the first detection condition comprises:

[0059] calculating the temperature difference vector of the near-surface pore defect surface of the GIS three-column insulator to be tested;

[0060] calculating the maximum temperature difference of the near-surface pore defect of the GIS three-column insulator to be tested according to the temperature difference vector of the near-surface pore defect surface of the GIS three-column insulator to be tested.

[0061] In an optional embodiment, the first detection condition uses infrared thermal wave nondestructive testing. Infrared thermal wave nondestructive testing is performed on a GIS three-column insulator calibration sample, temperature data of the near-surface pore defect surface and the normal area surface are extracted, and the temperature difference vector of the near-surface pore defect surface is calculated

[0062]

[0063] wherein, is the temperature difference vector of the near-surface pore defect surface, is the temperature vector of the defect area, is the temperature vector of the defect-free area, ΔT1, ΔT2, …, ΔT N is the temperature difference vector of the pore defect surface N components of T d1 ,T d2 ,...,T dN and T s1 ,T s2 ,…,T sN are N components of T and T . Calculate the maximum temperature difference ΔT max of the near-surface pore defect of the GIS three-column insulator:

[0064]

[0065] Further, the calculated maximum temperature difference of each defect surface is filled into the defect table, and a surface maximum temperature difference matrix [AT max ] m×n :

[0066]

[0067] For each set of calibrated defects, an exponential fitting model is used to fit the numerical relationship between the depth z of all defects at this diameter and the surface maximum temperature difference AT max , and to form a fitting function for each diameter, completing the calibration of near-surface pore defects of GIS three-strut insulators.

[0068] In an optional embodiment, the first detection condition can also use ultrasonic detection technology. Through ultrasonic detection technology, accurate defect positioning and depth measurement of GIS three-strut insulators can be performed. In the embodiments of the present application, ultrasonic detection technology includes transmitting ultrasonic signals and receiving reflected signals caused by defects. By analyzing the intensity and time delay of the reflected signals, the depth and position of the defects can be inferred.

[0069] It should be noted that the advantage of obtaining the near-surface pore defect surface maximum temperature difference of the GIS three-strut insulator to be tested under the first detection condition is that it can provide key temperature data for subsequent defect depth calculation. In practical applications, accurate acquisition of this data is crucial for accurate evaluation of defect depth. Through infrared thermal wave non-destructive testing technology, rapid identification and positioning of surface defects of GIS three-strut insulators can be achieved, thereby providing necessary temperature difference information for defect depth calculation.

[0070] S103, according to the first fitting function, combining the near-surface pore defect surface maximum temperature difference, inversely solving the defect depth corresponding to the near-surface pore defect.

[0071] In the embodiments of the present application, according to the first fitting function, combining the near-surface pore defect surface maximum temperature difference, inversely solving the defect depth corresponding to the near-surface pore defect includes:

[0072] Converting the first fitting function from the relationship function of near-surface pore defect surface maximum temperature difference and defect depth to the relationship function of defect depth and near-surface pore defect surface maximum temperature difference.

[0073] Detecting the GIS three-strut insulator to be tested containing near-surface pore unknown defects, performing infrared thermal wave non-destructive testing on the GIS three-strut insulator sample, extracting temperature data of the surface of the near-surface pore defect of the three-strut insulator and the surface of the normal area, calculating the temperature difference vector of the near-surface pore defect surface of the three-strut insulator According to GIS three-column insulator pore defect surface temperature difference vector Calculate GIS three-column insulator near-surface pore defect maximum temperature difference

[0074] Using defect diameter information, quickly locking the corresponding GIS three-column insulator near-surface pore defect surface maximum temperature difference ΔT max The fitting relationship ΔT of defect depth z max =f(z), and the near-surface pore defect surface maximum temperature difference Substitute the fitting function The defect depth z of the corresponding near-surface pore defect can be inversely solved * , complete the rapid calculation of GIS three-column insulator near-surface pore defect depth;

[0075] In the embodiments of the present application, a set of GIS three-column insulator near-surface pore defect depth rapid calculation method is formed, which is divided into calibration and detection two parts, wherein the calibration process only needs to be carried out in a new detection environment, and the numerical relationship between the defect depth and the maximum temperature difference under a certain defect diameter is obtained; When a new sample needs to be detected, the calibration process does not need to be repeated, and the detection process is directly entered, the maximum temperature difference of the unknown defect surface is calculated, and the defect depth is calculated by substituting it into the fitting relationship corresponding to the defect size, and the rapid calculation of the GIS three-column insulator near-surface pore defect depth is completed;

[0076] In the embodiments of the present application, as Figure 2The detailed step flow chart of the present application is shown, starting 201: this is the starting point of the flow. Sample planning and preparation 202: in this stage, the test sample with known defects needs to be designed and prepared. This may involve selecting the appropriate material, manufacturing defects, and recording the relevant parameters of the defects, such as diameter 203, depth 204 and definition 205, etc. Infrared thermal wave test 206: apply infrared thermal wave on the sample, collect data by measuring the change of surface temperature. This step is usually to detect the existence of defects and its influence. Surface temperature data form maximum temperature difference matrix 207: through the analysis of surface temperature data, the maximum temperature difference matrix can be obtained. This matrix reflects the temperature change at different positions. Heat transfer physics law 208: use heat transfer theory to explain and understand the observed temperature change pattern. This may involve the basic laws of heat transfer, such as Fourier's law or other related mathematical models. Maximum temperature difference-defect depth fitting model 209: based on the above analysis, a mathematical model is constructed to describe the relationship between maximum temperature difference and defect depth. This model may be derived by statistical methods or numerical simulation. Test data 210: after the model calibration is completed, the same method can be used to test new samples and collect corresponding surface temperature data. Defect depth expression / equation determination 211: use the collected data to solve the defect depth expression or equation inversely. This may involve some numerical calculation techniques, such as iterative method or optimization algorithm. Data processing flow 212: further process the inverse solution results, such as removing outliers, smoothing curves, etc., to improve the calculation accuracy. Form a three-pillar insulator air gap defect depth rapid calculation method 213: finally, through the above steps, a method suitable for rapid calculation of three-pillar insulator air gap defect depth is formed. This method has been verified to be effective and reliable. End 214: the flow ends.

[0077] In summary, the present application proposes a rapid calculation method and system for GIS three-pillar insulator air hole defect depth, obtains a first fitting function of the target GIS three-pillar insulator under a first detection condition; obtains the near-surface air hole defect surface maximum temperature difference of the GIS three-pillar insulator to be tested under the first detection condition; and inversely solves the defect depth of the corresponding near-surface air hole defect according to the first fitting function combined with the near-surface air hole defect surface maximum temperature difference. The rapid calculation method and system for GIS three-pillar insulator air hole defect depth of the present application can effectively detect the air hole defects inside the GIS three-pillar insulator through infrared imaging technology. This technical solution not only improves the accuracy of detection, but also greatly shortens the detection time, thereby improving the production efficiency and the safety of equipment operation. In addition, the present application can also provide important data support for the maintenance and fault prevention of GIS three-pillar insulators, which helps to reduce the power system failures caused by insulator defects and ensures the stability and reliability of power supply.

[0078] The embodiment also provides a GIS three-column insulator pore defect depth rapid calculation system, comprising:

[0079] The fitting function establishment module is configured to obtain a first fitting function of the target GIS three-column insulator under the first detection condition.

[0080] The actual temperature difference acquisition module is configured to obtain a near-surface pore defect surface maximum temperature difference of the GIS three-column insulator to be detected under the first detection condition.

[0081] The defect depth calculation module is configured to inversely solve a defect depth of the corresponding near-surface pore defect according to the first fitting function and in combination with the near-surface pore defect surface maximum temperature difference.

[0082] The above modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory in the computer device in the form of software, so as to call and execute the operations of the above modules by the processor.

[0083] The embodiment also provides a computer device which can be a terminal, and an internal structure diagram of the computer device can be as shown in Figure 4 The computer device comprises a processor, a memory, a communication interface, a display screen and an input device which are connected through a system bus. The processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device comprises a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operating system and the computer program in the non-volatile storage medium. The communication interface of the computer device is configured to perform wired or wireless communication with an external terminal. The wireless communication can be achieved through WIFI, an operator network, NFC (near field communication) or other technologies. The computer program is executed by the processor to implement a GIS three-column insulator pore defect depth rapid calculation method. The display screen of the computer device can be a liquid crystal display screen or an electronic ink display screen. The input device of the computer device can be a touch layer overlaid on the display screen, or can be a key, trackball or touchpad arranged on the computer device shell, or can be an external keyboard, touchpad or mouse, etc.

[0084] The embodiment also provides a computer readable storage medium having a computer program stored thereon. The computer program is executed by the processor to implement the following steps:

[0085] obtain a first fitting function of the target GIS three-column insulator under a first detection condition;

[0086] Obtaining the maximum temperature difference of the near-surface pore defect surface of the GIS three-strut insulator under the first detection condition;

[0087] According to the first fitting function, the defect depth corresponding to the near-surface pore defect is inversely solved in combination with the maximum temperature difference of the near-surface pore defect surface.

[0088] Embodiment 2

[0089] Reference Figures 2-3 For an embodiment of the present application, a rapid calculation method and system for the pore defect depth of a GIS three-strut insulator are provided. In order to verify the beneficial effects of the present application, scientific demonstration is carried out through experiments.

[0090] The near-surface pore defects of the GIS three-strut insulator shown in the following table are used as an example to illustrate the calibration process. Among the selected defects, the defect diameter and defect depth are different.

[0091] Table 2: GIS three-strut insulator near-surface pore defect calibration defects

[0092]

[0093] The GIS three-strut insulator samples containing the above defects are subjected to infrared thermal wave nondestructive testing. The thermal excitation is pulse excitation, the maximum heat flux density is Q = 10 6 W / m 2 , the pulse duration is t = 0.1 s, and the infrared thermal imager is used to collect the temperature change data of the GIS three-strut insulator surface, the collection frequency is f = 10 Hz, and the collected area contains the temperature change of the defect area and the temperature change of the non-defect area.

[0094] The maximum temperature difference of each defect surface is calculated according to the calculation method in the summary of the invention. The calculation can obtain the following maximum temperature difference table:

[0095] Table 3: Maximum temperature difference table

[0096]

[0097]

[0098] Therefore, the maximum temperature difference matrix [ΔT max ] 4×6 is:

[0099]

[0100] The maximum temperature difference ΔT max of each calibration group is fitted with the defect depth z, and the fitting model uses the above logarithmic fitting model, and the fitting result is obtained:

[0101] Table: fitting results

[0102]

[0103] In Figure 3 The maximum temperature difference ΔT is drawn in the window max The scatter plot of the true value of defect depth z and the fitting curve, it can be seen that the fitting curve better reflects the maximum temperature difference ΔT max The numerical relationship with the defect depth z is:

[0104] The rapid estimation method of the defect depth z is obtained. If more accurate calculation results are required, the value of the defect diameter in the calibration process can be increased, and the number of calibration groups can be increased to achieve this. Only the maximum temperature difference ΔT max measured in the experiment can be used to complete the rapid calculation of the defect depth z through the calculation formula of the defect depth z.

[0105] Example 3

[0106] According to the analysis of Example 2, the maximum temperature difference ΔT max corresponding to the defect diameter d1=20mm and the fitting function of the defect depth z is:

[0107] ΔT max =54.361e -0.965z +1.198

[0108] A new defect d1z7 is set in the GIS three-legged insulator to verify the effectiveness of the rapid estimation method of the near-surface pore defect depth of the present application. The parameters of the new defect d1z7 are as follows:

[0109] d1=20mm, z7=1.5mm

[0110] It can be seen that the depth of the defect is different from any of the above defects. In the case where the parameters of the defect d1z7 are known, the maximum temperature difference ΔT is first calculated using the known defect depth z7. max =13.7615℃

[0111] The defect depth z7 is calculated under the condition that the maximum temperature difference ΔT max is known, and the deviation is verified. The maximum temperature difference ΔT max =13.76℃ measured by the experiment is substituted into the rapid estimation expression of the defect depth z to obtain:

[0112]

[0113] The calculated value The relative error of the true value z7 is calculated as shown in the following table, and it can be seen that the relative error is about 0.5%. The calculation method of the present application is more accurate.

[0114] Table 4: Error analysis results

[0115]

[0116] Example 4

[0117] According to the analysis of Example 2, the maximum temperature difference ΔT corresponding to the defect diameter d2 = 10 mm is max The fitting function of the defect depth z is:

[0118] ΔT max = 51.218e -1.133z + 0.565

[0119] A new defect d2z8 is set in the GIS three-pillar insulator to verify the effectiveness of the near-surface porosity defect depth rapid estimation method of the present application. The parameters of the new defect d2z8 are as follows:

[0120] d2 = 10 mm, z8 = 2.5 mm

[0121] It can be seen that the depth of the defect is different from any of the above defects. In the case where the defect d2z8 parameters are known, first calculate the maximum temperature difference using the known defect depth z8, ΔT max = 3.5965℃

[0122] In the case where the maximum temperature difference ΔT max is known, the defect depth z7 is calculated, and the deviation is verified. The maximum temperature difference ΔT max = 3.5965℃ measured by the test is substituted into the rapid estimation expression of the defect depth z, and the following can be obtained:

[0123]

[0124] The relative error between the calculated value and the true value z8 is calculated as follows, and it can be seen that the relative error is about 0.5%, and the calculation method of the present application is more accurate.

[0125] Table 5: Error analysis results

[0126]

[0127] It should be noted that the above examples are only used to illustrate the technical solutions of the present application and are not limiting. Although the present application has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solutions of the present application can be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present application, and they should be covered in the scope of the claims of the present application.

[0128] Those skilled in the art will appreciate that embodiments of the application can be readily used as software, hardware, or a combination of software and hardware. In one embodiment, the application can be implemented in software and / or firmware. In addition, those skilled in the art will further appreciate that the application can be implemented as a method, apparatus, or computer program product. Therefore, embodiments of the application can take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects all generally referred to herein as a "circuit" or "module." Furthermore, embodiments of the application can take the form of a computer program product on a computer-readable storage medium having computer program code embodied in the storage medium. The computer program code can cause a computer, processor, or other programmable data processing apparatus to effect the steps in the embodiments of the application as set forth in the description below.

[0129] The embodiments of methods, apparatuses (systems) and computer program products of the application are described herein with reference to flowchart and / or block diagrams illustrations of the methods, apparatuses (systems) and computer program products according to embodiments of the application. It will be understood that each block of the flowchart and / or block diagrams illustrations, and combinations of blocks in the flowchart and / or block diagrams illustrations, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general purpose computer, special purpose computer, embedded processing element or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart and / or block diagram block(s) or combinations thereof. Figure 1 Figure 1

[0130] These computer program instructions can also be stored in a computer- readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instructions which implement the flowchart and / or block diagram block(s) or combinations thereof. Figure 1 Figure 1

[0131] These computer program instructions can also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer-implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the flowchart and / or block diagram block(s) or combinations thereof. Figure 1 Figure 1

[0132] While preferred embodiments of the application have been described, modifications and variations can be effected to such preferred embodiments by those of ordinary skill in the art once the nature of the ​​​​​​

[0133] Obviously, many modifications and variations of the present application are possible in light of the above teachings. It is, therefore, to be understood that within the scope of the appended claims and their equivalents, the application can be practiced otherwise than as specifically described.

Claims

1. A rapid calculation method for the depth of porosity defects in GIS three-post insulators, characterized in that, include: Obtain the first fitting function of the target GIS three-post insulator under the first detection condition; Obtain the maximum surface temperature difference of near-surface porosity defects in the GIS three-post insulator under the first detection condition; Based on the first fitting function and combined with the maximum temperature difference on the surface of the near-surface porosity defect, the defect depth of the corresponding near-surface porosity defect is solved in reverse. The first fitting function is the relationship function between all defect depths and the maximum surface temperature difference under different defect diameters; The first fitting function for obtaining the target GIS three-post insulator under the first detection condition includes: A defect table for near-surface porosity calibration of GIS three-post insulators is established, wherein the defect depth and defect diameter are arranged in a first order in the rows and columns of the defect table; Acquire temperature data of the near-surface porosity defect surface and the normal area surface under the first detection condition, and calculate the temperature difference vector of the near-surface porosity defect surface; The calculated temperature difference vector of the near-surface porosity defect surface is filled into the defect table to obtain the maximum surface temperature difference matrix; The first fitting function is the first fitting function obtained after fitting using the first fitting model; When selecting the exponential fitting model as the first fitting model, the exponential fitting model is used for each defect diameter. Fit all defect depths under this diameter Maximum surface temperature difference The numerical relationship is determined, and a fitting function is formed for each diameter.

2. The rapid calculation method for the depth of porosity defects in GIS three-post insulators as described in claim 1, characterized in that, The process of obtaining the maximum temperature difference on the surface of near-surface porosity defects of the GIS three-post insulator under the first detection condition includes: Calculate the temperature difference vector on the surface of the near-surface porosity defect of the GIS three-post insulator under test; The maximum temperature difference of the near-surface porosity defect of the GIS three-post insulator under test is calculated based on the temperature difference vector of the near-surface porosity defect surface.

3. The rapid calculation method for the depth of porosity defects in GIS three-post insulators as described in claim 2, characterized in that, The step of determining the defect depth of the corresponding near-surface porosity defect based on the first fitting function and the maximum temperature difference on the near-surface porosity defect surface includes: The first fitting function is transformed from the relationship function between the maximum temperature difference on the surface of near-surface porosity defects and the defect depth into the relationship function between the defect depth and the maximum temperature difference on the surface of near-surface porosity defects.

4. The rapid calculation method for the depth of porosity defects in GIS three-post insulators as described in claim 3, characterized in that, Also includes: When a new GIS three-post insulator needs to be tested, the testing process begins directly. The maximum temperature difference on the surface of the near-surface porosity defect of the GIS three-post insulator and the actual defect diameter are calculated. The depth of the near-surface porosity defect of the GIS three-post insulator is then quickly calculated using the first fitting function.

5. A rapid calculation system for the depth of porosity defects in GIS three-post insulators using the method described in claim 1, characterized in that, include: The fitting function establishment module is used to obtain the first fitting function of the target GIS three-post insulator under the first detection condition; The actual temperature difference acquisition module is used to acquire the maximum temperature difference of the near-surface porosity defect surface of the GIS three-post insulator under the first detection condition; The defect depth calculation module is used to solve the defect depth of the corresponding near-surface porosity defect based on the first fitting function and the maximum temperature difference on the near-surface porosity defect surface.

6. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 4.

7. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 4.

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