Vortex light emission device and manufacturing method and control method thereof

Abstract

The present application provides a vortex light emitting device and its manufacturing method and control method, wherein the vortex light emitting device includes a back metal sheet, an annular metal sheet, a plurality of varactor diodes and a non-magnetic medium, the annular metal sheet is arranged above the back metal sheet, the varactor diode is arranged between the annular metal sheet and the back metal sheet, and is evenly arranged along the annular metal sheet, the non-magnetic medium is filled between the annular metal sheet and the back metal sheet to form a dielectric layer, the positive electrode of each varactor diode is connected to the positive electrode of an external voltage source through the annular metal sheet, and the negative electrode of each varactor diode is connected to the negative electrode of an external voltage source through the back metal sheet. Therefore, the vortex light emitting device in the present application has a simple structure, low cost and is easy to implement. At the same time, it can also be used to realize the regulation and emission of OAM waves of different radiation orders, effectively improving communication efficiency.

Description

Technical Field

[0001] The present application relates to the field of optical quantum information communication technology, and in particular to a vortex light emitting device and a manufacturing method and a control method thereof. Background Art

[0002] OAM waves have important application value in wireless communications, radar imaging, etc. due to their ability to carry information of different modes. Therefore, by loading OAM wave transmitters, the unique electromagnetic radiation characteristics of OAM waves can be used to improve the transmission efficiency of various communication systems.

[0003] At present, there are mainly the following solutions to realize an OAM transmitter with adjustable order: the first is the array antenna control method, which realizes the switching of OAM modes by controlling the phase of the antenna array. It has certain flexibility, but its hardware is complex and costly. The second is the reconfigurable reflector (RIS) technology, which uses the phase unit on the reflector to control the phase distribution of the reflected wave to generate OAM beams of different orders. Although a certain order adjustment is achieved, the design and accuracy of the reflector limit its actual application effect. The third method is the combination of phased array technology and multi-mode excitation source. Order adjustment is achieved by controlling the excitation source. In theory, it has higher accuracy, but the structure is complex and easily affected by environmental interference, and the stability is insufficient.

[0004] Therefore, the vortex light emitting devices used to emit OAM waves in the prior art generally have the problem of being unable to quickly and flexibly emit and adjust the radiation order of OAM waves, which seriously affects the communication efficiency of the communication system using OAM waves for communication. Summary of the invention

[0005] Based on this, the purpose of the present application is to provide a vortex light emitting device and its manufacturing method and control method, which can effectively improve the communication efficiency of various communication systems that use OAM waves for communication.

[0006] The purpose of this application can be achieved through the following technical solutions:

[0007] The present application provides a vortex light emitting device, comprising a back metal sheet, an annular metal sheet, a plurality of varactor diodes and a non-magnetic medium, wherein the annular metal sheet is arranged above the back metal sheet, the varactor diode is arranged between the annular metal sheet and the back metal sheet, and is evenly arranged along the annular metal sheet, and the non-magnetic medium is filled between the annular metal sheet and the back metal sheet to form a dielectric layer; the positive electrode of each varactor diode is connected to the positive electrode of an external voltage source through the annular metal sheet, and the negative electrode of each varactor diode is connected to the negative electrode of the external voltage source through the back metal sheet , wherein the external voltage source is used to provide a DC bias voltage; the equivalent relative dielectric constant of the varactor diode when it is arranged between the annular metal sheet and the back metal sheet is a first preset value, and when the equivalent relative dielectric constant is the first preset value, the varactor diode is equivalent to a static grating under the DC bias voltage; the DC bias voltage is provided to the vortex light emitting device through the external voltage source; the working number of the varactor diode is adjusted by performing separate circuit on-off control on each varactor diode, so that the vortex light emitting device emits an OAM wave of a corresponding radiation order.

[0008] Furthermore, the orthographic projection surface of the annular metal sheet completely falls on the back metal sheet, thereby improving the working stability of the vortex light emitting device.

[0009] Furthermore, the radius of the annular metal sheet is 32 mm, the line width of the annular metal sheet is 1.4 mm, the thickness of the dielectric layer is 1.575 mm, the relative dielectric constant of the dielectric layer is 10.2, the thickness of the back metal sheet is 0.035 mm, the characteristic impedance of the back metal sheet is 50, the relative dielectric constant of the back metal sheet is 6.62, and the model of the varactor diode is SMV1245-079LF.

[0010] Furthermore, when all the varactor diodes arranged on the vortex light emitting device are not working, the vortex light emitting device operates in the whispering gallery mode when using electromagnetic waves with a frequency of 9.77 GHz, and the radiation order of the OAM wave emitted is l WGM =18; wherein, when the working number of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device is l rad = l WGM -p, where l rad When the working quantity of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device; lWGM is the radiation order of the OAM wave emitted by the vortex light emitting device when the working number of the varactor diode is 0; p is the working number of the varactor diode.

[0011] The present application also provides a method for manufacturing a vortex light emitting device, which is applied to the above-mentioned vortex light emitting device, and includes the following steps: inputting the DC bias voltage to the varactor diode to be tested to determine the working capacitance of the varactor diode to be tested; according to the DC bias voltage and the working capacitance of the varactor diode to be tested, combined with the field-circuit equivalence principle, calculating the equivalent relative dielectric constant of the varactor diode to be tested when it is set between the annular metal sheet and the back metal sheet; according to the equivalent relative dielectric constant, judging whether the varactor diode to be tested can be equivalent to a static grating under the DC bias voltage; if so, setting the varactor diode to be tested between the annular metal sheet and the back metal sheet, and connecting the positive electrode of the varactor diode to be tested to the annular metal sheet, and connecting the negative electrode of the varactor diode to be tested to the back metal sheet; filling the non-magnetic medium between the annular metal sheet and the back metal sheet to form a dielectric layer.

[0012] The present application also provides a control method for a vortex light emitting device, which is applied to the above-mentioned vortex light emitting device, comprising the following steps: providing the DC bias voltage with a value of 0.6V to the varactor diode through the external voltage source, wherein the radius of the annular metal sheet is 32 mm, the line width of the annular metal sheet is 1.4 mm, the thickness of the dielectric layer is 1.575 mm, the relative dielectric constant of the dielectric layer is 10.2, the thickness of the back metal sheet is 0.035 mm, the characteristic impedance of the back metal sheet is 50, the relative dielectric constant of the back metal sheet is 6.62, and the model of the varactor diode is SMV1245-079LF; the vortex light emitting device is operated using electromagnetic waves with a frequency of 9.77 GHz, and when all the varactor diodes arranged on the vortex light emitting device are not working, the radiation order of the OAM wave emitted by the vortex light emitting device is l WGM =18; adjusting the working number of the varactor diode so that the vortex light emitting device emits an OAM wave of a corresponding radiation order; wherein, when the working number of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device is l rad = l WGM -p, where l rad When the working quantity of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device; lWGM is the radiation order of the OAM wave emitted by the vortex light emitting device when the working number of the varactor diode is 0; p is the working number of the varactor diode.

[0013] Compared with the prior art, the vortex light emitting device described in the present application is configured by arranging the varactor diode between the annular metal sheet and the back metal sheet, and evenly arranging it along the annular metal sheet, while the positive electrode of each varactor diode is connected to the positive electrode of the external voltage source through the annular metal sheet, and the negative electrode of each varactor diode is connected to the negative electrode of the external voltage source through the back metal sheet, wherein the external voltage source is used to provide a DC bias voltage; when the varactor diode is arranged between the annular metal sheet and the back metal sheet, the equivalent relative dielectric constant is a first preset value, and when the equivalent relative dielectric constant is the first preset value, the varactor diode is equivalent to a static grating under the DC bias voltage. Thus, the vortex light emitting device described in the present application can realize the rapid adjustment and emission of OAM waves of different radiation orders by making different numbers of varactor diodes loaded on the vortex light emitting device enter the working state, thereby improving the communication efficiency of various communication systems that use OAM waves for communication, and the device has a simple structure, low cost and is easy to implement.

[0014] For better understanding and implementation, the present application is described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of the structure of the vortex light emitting device provided in this application;

[0016] Figure 2 A flowchart of the steps of the manufacturing method of the vortex light emitting device provided in the present application;

[0017] Figure 3 A flow chart of the steps of the control method of the vortex light emitting device provided in the present application;

[0018] Figure 4 A schematic diagram of the radiation results of the vortex light emitting device provided in the present application when working in the whispering gallery mode using electromagnetic waves with a frequency of 9.77 GHz;

[0019] Figure 5 Schematic diagram of radiation results after the vortex light emitting device provided in the present application adjusts the radiation order of the emitted OAM wave to 1, 2 or 3 respectively. DETAILED DESCRIPTION

[0020] The present application provides a vortex light emission device and a manufacturing method and a control method thereof. In order to make the purpose, technical solution and effect of the present application clearer and more specific, the present application is further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0021] It will be understood by those skilled in the art that, unless expressly stated, the singular forms "one", "said", and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. It should be understood that when we refer to an element as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element, or there may be intermediate elements. In addition, the "connection" or "coupling" used herein may include wireless connection or wireless coupling. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0022] It should be understood that, although the terms first, second, third, etc. may be used in the present application to describe various information, these information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of the present application, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, the words "if" / "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determination".

[0023] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with those in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0024] The invention is further described below by describing embodiments in conjunction with the accompanying drawings.

[0025] Example 1

[0026] Please refer to Figure 1 , Figure 1The schematic diagram of the structure of the vortex light emitting device provided in the present application, this embodiment provides a vortex light emitting device. The vortex light emitting device includes a back metal sheet 3, an annular metal sheet 1, a plurality of varactor diodes 2 and a non-magnetic medium. The annular metal sheet 1 is arranged above the back metal sheet 3, the varactor diode 2 is arranged between the annular metal sheet 1 and the back metal sheet 3, and is evenly arranged along the annular metal sheet 1, and the non-magnetic medium is filled between the annular metal sheet 1 and the back metal sheet 3 to form a dielectric layer.

[0027] The positive electrode of each of the varactor diodes 2 is connected to the positive electrode of the external voltage source through the annular metal sheet 1, and the negative electrode of each of the varactor diodes 2 is connected to the negative electrode of the external voltage source through the back metal sheet 3, wherein the external voltage source is used to provide a DC bias voltage; when the varactor diode 2 is arranged between the annular metal sheet 1 and the back metal sheet 3, the equivalent relative dielectric constant is a first preset value, and when the equivalent relative dielectric constant is the first preset value, the varactor diode is equivalent to a static grating under the DC bias voltage.

[0028] In some embodiments, the orthographic projection surface of the annular metal sheet 1 completely falls on the back metal sheet 3. Thus, the working stability of the vortex light emitting device is improved.

[0029] According to the inventive concept of the present application, those skilled in the art can set various parameters of the vortex light emitting device according to actual conditions, including but not limited to the radius of the annular metal sheet, the line width of the annular metal sheet, the thickness of the dielectric layer, the relative dielectric constant of the dielectric layer, the thickness of the back metal sheet, the characteristic impedance of the back metal sheet, and the model and quantity of the varactor diode, etc.

[0030] In this embodiment, the technician can set the radius of the annular metal sheet to 32 mm, the line width of the annular metal sheet to 1.4 mm, the thickness of the dielectric layer to 1.575 mm, the relative dielectric constant of the dielectric layer to 10.2, the thickness of the back metal sheet to 0.035 mm, the characteristic impedance of the back metal sheet to 50, the relative dielectric constant of the back metal sheet to 6.62, and the model of the varactor diode to SMV1245-079LF. Please also refer to Figure 4 , Figure 4 This is a schematic diagram of the radiation results of the vortex light emitting device in this embodiment when working in the whispering gallery mode using electromagnetic waves with a frequency of 9.77 GHz.

[0031] In this embodiment, when the external voltage source is not working (no DC bias voltage is provided), all the varactor diodes arranged on the vortex light emitting device are not working (not connected to the circuit). At the same time, when all the varactor diodes are not working and electromagnetic waves with a frequency of 9.77 GHz are used, the vortex light emitting device operates in the whispering gallery mode and emits an OAM wave with a radiation order of 18. At the same time, in this embodiment, when the working number of the varactor diodes is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device is 18-p, where p is the working number of the varactor diodes.

[0032] The working principle of the vortex light emitting device described in the present application is: a fixed DC bias voltage is applied to each of the varactor diodes on the vortex light emitting device, and as the number of the varactor diodes entering the working state changes (i.e., the working number of the varactor diodes is adjusted), the vortex light emitting device emits OAM waves of different radiation orders, wherein the OAM wave is an orbital angular momentum (OAM) wave, which is an electromagnetic wave with a spiral phase wavefront.

[0033] According to common knowledge in the art, technicians can adjust the working quantity of the varactor diodes by performing separate circuit on-off control on each varactor diode. Of course, in other implementations, power feeding can also be achieved by other means, such as setting a main switch controller or a latch circuit.

[0034] Please refer to Figure 2 This embodiment also provides a method for manufacturing a vortex light emitting device, which is applied to the above-mentioned vortex light emitting device and includes the following steps:

[0035] S10, inputting the DC bias voltage to the varactor diode to be tested to determine the working capacitance of the varactor diode to be tested;

[0036] S20, calculating the equivalent relative dielectric constant of the varactor diode to be tested when it is arranged between the annular metal sheet and the back metal sheet according to the DC bias voltage and the working capacitance of the varactor diode to be tested and in combination with the field-circuit equivalent principle;

[0037] S30, judging whether the varactor diode to be tested can be equivalent to a static grating under the DC bias voltage according to the equivalent relative dielectric constant;

[0038] S40, if yes, disposing the varactor diode to be tested between the annular metal sheet and the back metal sheet, connecting the positive electrode of the varactor diode to be tested to the annular metal sheet, and connecting the negative electrode of the varactor diode to be tested to the back metal sheet;

[0039] S50, filling the non-magnetic medium between the annular metal sheet and the back metal sheet to form a medium layer.

[0040] In step S10, the DC bias voltage is input to the varactor diode to be tested to determine the working capacitance of the varactor diode to be tested.

[0041] The varactor is a diode with variable capacitance characteristics, and its working principle is based on the reverse bias and charge accumulation effect of the PN junction. Commonly used varactor diodes are tuning diodes and slow-wave diodes, etc. The DC bias voltage is a fixed DC voltage added to the electronic circuit to ensure that the circuit elements (such as transistors, operational amplifiers, etc.) work at a suitable operating point. In this embodiment, the DC bias voltage can be set to 0.6V.

[0042] A person skilled in the art can calculate the working capacitance C of the varactor diode to be tested by using the varactor diode working capacitance calculation formula, which includes the following steps:

[0043] S101, calculating the working capacitance of the varactor diode to be tested according to the calculation formula of the working capacitance of the varactor diode C :

[0044] ,

[0045] in, C j0 is the junction capacitance of the varactor diode to be tested when no voltage is applied, V j0 is the reverse breakdown voltage of the varactor diode to be tested, M is the capacitance variation index of the varactor diode to be tested, V is the DC bias voltage.

[0046] A person skilled in the art may set the model of the varactor diode to be tested to SMV1245-079LF. At this time, the input voltage of the varactor diode to be tested is a DC bias voltage of 0.6V, and the working capacitance provided by the varactor diode to be tested is 22.86V. pF In addition, technicians can obtain other data of the varactor diode of this model from the data sheet of the varactor diode of this model, including but not limited to the reverse breakdown voltage and capacitance variation index of the varactor diode of this model.

[0047] For step S20, according to the DC bias voltage and the working capacitance of the varactor to be tested, combined with the field-circuit equivalent principle, the equivalent relative dielectric constant of the varactor to be tested when it is arranged between the annular metal sheet and the back metal sheet is calculated.

[0048] In one embodiment, step S20 includes:

[0049] S201. When the varactor diode to be tested is disposed between the annular metal sheet and the back metal sheet, a microstrip transmission line is formed.

[0050] The microstrip transmission line is a transmission line used in microwave circuits and radio frequency fields, which transmits electromagnetic signals through the electric field and magnetic field between its internal conductor and the substrate.

[0051] S202, calculating the equivalent distributed capacitance of the microstrip transmission line according to the calculation formula of the equivalent distributed capacitance of the microstrip transmission line C s :

[0052] ,

[0053] in, ε r is the relative dielectric constant of the dielectric layer, Z 0 is the characteristic impedance of the back metal sheet, and c is the speed of light.

[0054] S203, calculating the inductance of the microstrip transmission line according to the calculation formula of the inductance of the microstrip transmission line L s :

[0055] ,

[0056] in, ε r is the relative dielectric constant of the dielectric layer, Z 0 is the characteristic impedance of the back metal sheet, and c is the speed of light.

[0057] S204, on the microstrip transmission line, each of the varactor diodes to be tested forms a modulation unit, and the length d of the modulation unit is calculated according to a length calculation formula of the modulation unit:

[0058] ,

[0059] Wherein, r is the radius of the annular metal sheet, and p is the number of the variable capacitance diodes to be tested.

[0060] S205. Obtain a distributed capacitance of the modulation unit and a distributed inductance of the modulation unit according to the length of the modulation unit, the equivalent distributed capacitance of the microstrip transmission line, and the inductance of the microstrip transmission line.

[0061] In one embodiment, step S205 includes:

[0062] S205-1. Calculate the distributed capacitance of the modulation unit according to the distributed capacitance calculation formula of the modulation unit. C’ s :

[0063] ,

[0064] in, C s is the equivalent distributed capacitance of the microstrip transmission line, and d is the length of the modulation unit.

[0065] S205-2. Calculate the distributed inductance of the modulation unit according to the distributed inductance calculation formula of the modulation unit. L’ s :

[0066] ,

[0067] in, L s is the inductance of the microstrip transmission line, and d is the length of the modulation unit.

[0068] S206. According to the length of the modulation unit, the distributed capacitance of the modulation unit, and the distributed inductance of the modulation unit, combined with the field-circuit equivalence principle, Kirchhoff's law, and Maxwell's equations, obtain the equivalent relative dielectric constant of the varactor diode to be tested when it is arranged between the annular metal sheet and the back metal sheet.

[0069] In one embodiment, step S206 includes:

[0070] S206-1. Apply Kirchhoff's law according to the length of the modulation unit, the distributed capacitance of the modulation unit, and the distributed inductance of the modulation unit to obtain a first wave equation:

[0071] ,

[0072] in, t For time, C’ s is the distributed capacitance of the modulation unit, L’ s is the distributed inductance of the modulation unit, d is the length of the modulation unit, C(t) is the preset time-varying capacitor, v(t) is the preset time-varying voltage, k is the preset electromagnetic wave propagation wave number.

[0073] S206-2. According to the first wave equation, combined with the field-circuit equivalence principle and Maxwell equations, derive and obtain the second wave equation:

[0074] ,

[0075] in, μ is the vacuum magnetic permeability of the varactor diode to be tested, ε 0 is the vacuum permittivity of the varactor diode to be tested, ε rl is the equivalent relative dielectric constant when the varactor diode to be tested is arranged between the annular metal sheet and the back metal sheet, E(t) is the preset time-varying electric field.

[0076] In one embodiment, in a uniform, lossless, isotropic, ideal time-varying medium, the electric field propagating in the positive direction along the z-axis can be expressed as , wherein the ideal time-varying medium is a medium whose relative dielectric constant or magnetic permeability changes with time.

[0077] S206-3. Solve the second wave equation to obtain the equivalent relative dielectric constant when the varactor diode to be tested is arranged between the annular metal sheet and the back metal sheet.

[0078] In this embodiment, when the varactor diode to be tested is arranged between the annular metal sheet and the back metal sheet, the equivalent relative dielectric constant is 15.3, that is, the first preset value is 15.3.

[0079] For step S30, based on the equivalent relative dielectric constant, it is determined whether the varactor diode to be tested can be equivalent to a static grating under the DC bias voltage.

[0080] In this embodiment, the technician can determine whether the equivalent relative dielectric constant is 15.3, and if so, determine whether the varactor diode to be tested can be equivalent to a static grating under the DC bias voltage.

[0081] For step S40, if yes, the varactor diode to be tested is disposed between the annular metal sheet and the back metal sheet, and the anode of the varactor diode to be tested is connected to the annular metal sheet, and the cathode of the varactor diode to be tested is connected to the back metal sheet.

[0082] In this embodiment, the radius of the annular metal sheet is 32 mm, the line width of the annular metal sheet is 1.4 mm, the thickness of the back metal sheet is 0.035 mm, the characteristic impedance of the back metal sheet is 50, and the relative dielectric constant of the back metal sheet is 6.62.

[0083] In step S50, the non-magnetic medium is filled between the annular metal sheet and the back metal sheet to form a medium layer.

[0084] The non-magnetic medium is a material that does not produce obvious magnetization phenomenon under the action of a magnetic field, and its magnetic permeability is close to the magnetic permeability of a vacuum, that is, very close to 1. Common non-magnetic media include copper, aluminum, and ceramics.

[0085] In one embodiment, the thickness of the dielectric layer is 1.575 mm, and the relative dielectric constant of the dielectric layer is 10.2.

[0086] Please refer to Figure 3 The present application also provides a control method for a vortex light emitting device, which is applied to the above-mentioned vortex light emitting device and comprises the following steps:

[0087] S100 , providing the DC bias voltage of 0.6 V to the varactor diode through the external voltage source.

[0088] Among them, the radius of the annular metal sheet is 32 mm, the line width of the annular metal sheet is 1.4 mm, the thickness of the dielectric layer is 1.575 mm, the relative dielectric constant of the dielectric layer is 10.2, the thickness of the back metal sheet is 0.035 mm, the characteristic impedance of the back metal sheet is 50, the relative dielectric constant of the back metal sheet is 6.62, and the model of the varactor diode is SMV1245-079LF.

[0089] S200, the vortex light emitting device is operated using electromagnetic waves with a frequency of 9.77 GHz. When all the varactor diodes arranged on the vortex light emitting device are not operating, the radiation order of the OAM wave emitted by the vortex light emitting device is l WGM =18.

[0090] S300, adjusting the working quantity of the varactor diode so that the vortex light emitting device emits an OAM wave of a corresponding radiation order.

[0091] In step S100, the DC bias voltage having a value of 0.6 V is provided to the vortex light emitting device through the external voltage source.

[0092] In this embodiment, the external voltage source may be a battery or a linear power supply, or may be an electrical device capable of providing a DC bias voltage.

[0093] For step S300, adjusting the working quantity of the varactor diode so that the vortex light emitting device emits an OAM wave of a corresponding radiation order;

[0094] In one embodiment, for the vortex light emitting device set by the technicians in this embodiment, when the working number of the varactor diode is 0, the radiation order of the OAM wave emitted by the vortex light emitting device is l WGM =18; when the working number of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device is l rad = l WGM -p, where l rad When the working quantity of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device; l WGM is the radiation order of the OAM wave emitted by the vortex light emitting device when the working number of the varactor diode is 0; p is the working number of the varactor diode.

[0095] According to the inventive concept of the present application, the technician can adjust the working number of the varactor diodes to 17, so that the radiation order of the OAM wave emitted by the vortex light emitting device is 1; adjust the working number of the varactor diodes to 16, so that the radiation order of the OAM wave emitted by the vortex light emitting device is 2; adjust the working number of the varactor diodes to 15, so that the radiation order of the OAM wave emitted by the vortex light emitting device is 3. Please also refer to Figure 5 , Figure 5 Schematic diagram of radiation results after the vortex light emitting device provided in the present application adjusts the radiation order of the emitted OAM wave to 1, 2 or 3 respectively.

[0096] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present application, and the present application is also intended to include such modifications and modifications.

Claims

1. A vortex light emitting device, characterized in that: The invention comprises a back metal sheet, an annular metal sheet, a plurality of variable capacitance diodes and a non-magnetic medium, wherein the annular metal sheet is arranged above the back metal sheet, the variable capacitance diodes are arranged between the annular metal sheet and the back metal sheet and are evenly arranged along the annular metal sheet, and the non-magnetic medium is filled between the annular metal sheet and the back metal sheet to form a dielectric layer; The positive electrode of each of the varactor diodes is connected to the positive electrode of an external voltage source through the annular metal sheet, and the negative electrode of each of the varactor diodes is connected to the negative electrode of an external voltage source through the back metal sheet, wherein the external voltage source is used to provide a DC bias voltage; when the varactor diode is arranged between the annular metal sheet and the back metal sheet, the equivalent relative dielectric constant is a first preset value, and when the equivalent relative dielectric constant is the first preset value, the varactor diode is equivalent to a static grating under the DC bias voltage; Providing the DC bias voltage to the vortex light emitting device through the external voltage source; The working quantity of the varactor diodes is adjusted by performing individual circuit on-off control on each varactor diode, so that the vortex light emitting device emits an OAM wave of a corresponding radiation order.

2. The vortex light emitting device according to claim 1, characterized in that: The orthographic projection surface of the annular metal sheet completely falls on the back metal sheet.

3. The vortex light emitting device according to claim 2, characterized in that: The radius of the annular metal sheet is 32 mm, the line width of the annular metal sheet is 1.4 mm, the thickness of the dielectric layer is 1.575 mm, the relative dielectric constant of the dielectric layer is 10.2, the thickness of the back metal sheet is 0.035 mm, the characteristic impedance of the back metal sheet is 50, the relative dielectric constant of the back metal sheet is 6.62, and the model of the varactor diode is SMV1245-079LF.

4. The vortex light emitting device according to claim 3, characterized in that: When all the varactor diodes arranged on the vortex light emitting device are not working, the vortex light emitting device works in the whispering gallery mode when using electromagnetic waves with a frequency of 9.77 GHz, and the radiation order of the OAM wave emitted is l WGM =18; When the working number of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device is l rad = l WGM -p, where l rad When the working quantity of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device; l WGM is the radiation order of the OAM wave emitted by the vortex light emitting device when the working number of the varactor diode is 0; p is the working number of the varactor diode.

5. A method for manufacturing a vortex light emitting device according to any one of claims 1 to 4, comprising the following steps: Inputting the DC bias voltage to the varactor diode to be tested to determine the working capacitance of the varactor diode to be tested; According to the DC bias voltage and the working capacitance of the varactor diode to be tested, combined with the field-circuit equivalent principle, the equivalent relative dielectric constant of the varactor diode to be tested when it is arranged between the annular metal sheet and the back metal sheet is calculated; According to the equivalent relative dielectric constant, determining whether the varactor diode to be tested can be equivalent to a static grating under the DC bias voltage; If yes, the varactor diode to be tested is disposed between the annular metal sheet and the back metal sheet, and the positive electrode of the varactor diode to be tested is connected to the annular metal sheet, and the negative electrode of the varactor diode to be tested is connected to the back metal sheet; The non-magnetic medium is filled between the annular metal sheet and the back metal sheet to form a medium layer.

6. The method for manufacturing a vortex light emitting device according to claim 5, wherein the step of inputting the DC bias voltage to the varactor diode to be tested and determining the working capacitance of the varactor diode to be tested comprises: According to the calculation formula of the working capacitance of the varactor diode, the working capacitance of the varactor diode to be tested is calculated. C : ， in, C j0 is the junction capacitance of the varactor diode to be tested when no voltage is applied, V j0 is the reverse breakdown voltage of the varactor diode to be tested, M is the capacitance variation index of the varactor diode to be tested, V is the DC bias voltage.

7. According to the manufacturing method of the vortex light emitting device of claim 5, the step of calculating the equivalent relative dielectric constant of the varactor diode to be tested when it is arranged between the annular metal sheet and the back metal sheet according to the DC bias voltage and the working capacitance of the varactor diode to be tested and in combination with the field-circuit equivalent principle comprises: When the variable capacitance diode to be tested is arranged between the annular metal sheet and the back metal sheet, a microstrip transmission line is formed; According to the calculation formula of the equivalent distributed capacitance of the microstrip transmission line, the equivalent distributed capacitance of the microstrip transmission line is calculated. C s : ， in, ε r is the relative dielectric constant of the dielectric layer, Z 0 is the characteristic impedance of the back metal sheet, c is the speed of light; According to the calculation formula of the inductance of the microstrip transmission line, the inductance of the microstrip transmission line is calculated L s : ， in, ε r is the relative dielectric constant of the dielectric layer, Z 0 is the characteristic impedance of the back metal sheet, c is the speed of light; On the microstrip transmission line, each of the varactor diodes to be tested forms a modulation unit. The length d of the modulation unit is calculated according to the length calculation formula of the modulation unit: ， Wherein, r is the radius of the annular metal sheet, and p is the number of the varactor diodes to be tested; Obtaining a distributed capacitance of the modulation unit and a distributed inductance of the modulation unit according to the length of the modulation unit, the equivalent distributed capacitance of the microstrip transmission line, and the inductance of the microstrip transmission line; According to the length of the modulation unit, the distributed capacitance of the modulation unit and the distributed inductance of the modulation unit, combined with the field-circuit equivalence principle, Kirchhoff's law and Maxwell's equations, the equivalent relative dielectric constant of the varactor diode to be tested is obtained when it is arranged between the annular metal sheet and the back metal sheet.

8. According to the method for manufacturing a vortex light emitting device according to claim 7, the step of obtaining the distributed capacitance and the distributed inductance of the modulation unit according to the length of the modulation unit, the equivalent distributed capacitance of the microstrip transmission line, and the inductance of the microstrip transmission line comprises: According to the distributed capacitance calculation formula of the modulation unit, the distributed capacitance of the modulation unit is calculated. C’ s : ， in, C s is the equivalent distributed capacitance of the microstrip transmission line, and d is the length of the modulation unit; According to the distributed inductance calculation formula of the modulation unit, the distributed inductance of the modulation unit is calculated L’ s : ， in, L s is the inductance of the microstrip transmission line, and d is the length of the modulation unit.

9. According to the manufacturing method of the vortex light emitting device of claim 8, the step of obtaining the equivalent relative dielectric constant of the variable capacitance diode to be tested when it is arranged between the annular metal sheet and the back metal sheet, based on the length of the modulation unit, the distributed capacitance of the modulation unit and the distributed inductance of the modulation unit, combined with the field-circuit equivalent principle, Kirchhoff's law and Maxwell's equations, comprises: According to the length of the modulation unit, the distributed capacitance of the modulation unit, and the distributed inductance of the modulation unit, Kirchhoff's law is applied to obtain the first wave equation: ， in, t For time, C’ s is the distributed capacitance of the modulation unit, L’ s is the distributed inductance of the modulation unit, d is the length of the modulation unit, C(t) is the preset time-varying capacitor, v(t) is the preset time-varying voltage, k is the preset electromagnetic wave propagation wave number; According to the first wave equation, combined with the field-path equivalence principle and Maxwell equations, the second wave equation is derived: ， in, μ is the vacuum magnetic permeability of the varactor diode to be tested, ε 0 is the vacuum permittivity of the varactor diode to be tested, ε rl is the equivalent relative dielectric constant when the varactor diode to be tested is arranged between the annular metal sheet and the back metal sheet, E(t) is a preset time-varying electric field; The second wave equation is solved to obtain an equivalent relative dielectric constant when the varactor diode to be tested is arranged between the annular metal sheet and the back metal sheet.

10. A control method for the vortex light emitting device according to claim 1, comprising the following steps: The DC bias voltage of 0.6V is provided to the varactor diode through the external voltage source, wherein the radius of the annular metal sheet is 32 mm, the line width of the annular metal sheet is 1.4 mm, the thickness of the dielectric layer is 1.575 mm, the relative dielectric constant of the dielectric layer is 10.2, the thickness of the back metal sheet is 0.035 mm, the characteristic impedance of the back metal sheet is 50, the relative dielectric constant of the back metal sheet is 6.62, and the model of the varactor diode is SMV1245-079LF; The vortex light emitting device is operated using electromagnetic waves of a frequency of 9.77 GHz. When all the varactor diodes arranged on the vortex light emitting device are not operating, the radiation order of the OAM wave emitted by the vortex light emitting device is l WGM =18; The working number of the varactor diode is adjusted so that the vortex light emitting device emits an OAM wave of a corresponding radiation order; wherein, when the working number of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device is l rad = l WGM -p, where l rad When the working quantity of the varactor diode is adjusted, the radiation order of the OAM wave emitted by the vortex light emitting device; l WGM is the radiation order of the OAM wave emitted by the vortex light emitting device when the working number of the varactor diode is 0; p is the working number of the varactor diode.

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