NAND FLASH life fast testing method, system, device and host

Abstract

The present invention discloses a method, system, device, and host for quickly testing the lifespan of a NAND FLASH. The method includes: a test device erases the original data of a test block and writes the test data into the test block; reads the test block to obtain read data, and determines whether the read data is consistent with the test data; if the read data is consistent with the test data, skips a preset time interval, returns to erase the original data of the test block, and writes the test data into the test block; if the read data is inconsistent with the test data, marks the test block as a bad block, and records the last test number to obtain a test number value; and determines the actual service life of the NAND FLASH based on the test number value and a preset acceleration factor. By skipping the preset time interval and restoring using the preset acceleration factor, the present invention can quickly obtain the actual service life of the NAND FLASH, shortening the test time and improving the test efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of data storage, and in particular to a method, system, device and host for quickly testing the life of a NAND FLASH. Background Art

[0002] With the rapid development of storage technology, memory has been widely used in various electronic devices. SPI NAND Flash (Serial Peripheral Interface NAND Flash) or PPI NAND Flash (Parallel Peripheral Interface NAND Flash) is a non-volatile memory that is widely used due to its small size, low power consumption, fast read and write speed and other advantages. Since NAND FLASH is widely used in various electronic devices, and different application scenarios have different requirements for the number of erase and write times of NAND FLASH (that is, the actual service life of NAND FLASH). Therefore, for the storage blocks of mass-produced NAND FLASH, the number of erase and write times must be tested and screened to ensure the consistency and reliability of the product.

[0003] Because NAND FLASH memory blocks have a strong consistency, the test result of performing a life test on any one of the NAND FLASH memory blocks can reflect the lifespan of all the NAND FLASH memory blocks. However, the existing NAND FLASH life test method requires waiting for a period of time after each erase / write test on a memory block (to prevent excessive degradation of the memory block, which would affect the NAND FLASH life test result) before the next erase / write test can be performed. Moreover, the NAND FLASH erasable number of times is typically 50,000 to 100,000 times, which makes the test time for the NAND FLASH life too long. Each erase / write test on NAND Flash requires waiting for a period of time before the next erase / write test can be performed, resulting in a problem of excessively long test time for the NAND FLASH life and low test efficiency.

[0004] Therefore, there is still an urgent need for a method that can shorten the test time of NAND FLASH life and improve test efficiency. Summary of the Invention

[0005] The main purpose of the present invention is to provide a method, system, device and host for quickly testing the life of NAND FLASH, so as to solve the problem that the test time of the existing defective NAND FLASH life is too long and the test efficiency is low.

[0006] To achieve the above object, the present invention proposes a method for quickly testing the life of a NAND FLASH, the method comprising:

[0007] The testing device erases original data of a test block of the NAND FLASH and writes test data into the test block, wherein the testing device is a device for testing the life of the NAND FLASH, the NAND FLASH includes multiple storage blocks, and the test block is any one of the storage blocks;

[0008] Reading the test block to obtain read data, and determining whether the read data is consistent with the test data;

[0009] If the read data is consistent with the test data, skipping the preset time interval, returning to execute erasing the original data of the test block of NANDFLASH, and writing the test data into the test block;

[0010] If the read data is inconsistent with the test data, the test block is marked as a bad block, and the last test number is recorded to obtain a test number value, wherein the test number value is the accelerated service life of the NAND FLASH during the fast test;

[0011] The actual service life of the NAND FLASH is determined according to the test number value and a preset acceleration factor.

[0012] In some embodiments, before erasing original data of a test block of the NAND FLASH and writing test data into the test block, the test device further includes:

[0013] Establishing communication with the NAND FLASH;

[0014] According to a fast test instruction, the test block is determined from the plurality of storage blocks of the NAND FLASH.

[0015] In some embodiments, before establishing communication with the NAND FLASH, the method further includes:

[0016] Establish communication with standard NAND FLASH, where the standard NAND FLASH is a NAND FLASH whose actual service life meets production requirements;

[0017] Generate a first standard test instruction and a first fast test instruction according to the standard NAND FLASH;

[0018] determining a first test block from a plurality of storage blocks of the standard NAND FLASH according to the first standard test instruction;

[0019] According to the first fast test instruction, a second test block is determined from a plurality of storage blocks of the standard NAND FLASH.

[0020] In some embodiments, after determining the first test block from the plurality of storage blocks of the standard NAND FLASH according to the first standard test instruction, the method further includes:

[0021] Erasing original data of the first test block and writing the test data into the first test block;

[0022] Reading the first test block to obtain first read data, and determining whether the first read data is consistent with the test data;

[0023] If the first read data is consistent with the test data, then after the preset time interval, returning to erase the original data of the first test block and writing the test data into the first test block;

[0024] If the first read data is inconsistent with the test data, the first test block is marked as a bad block, and the last test number is recorded to obtain a first test number value, wherein the first test number value is the actual service life of the standard NAND FLASH during the standard test.

[0025] In some embodiments, after determining the second test block from the plurality of storage blocks of the standard NAND FLASH according to the first fast test instruction, the method further includes:

[0026] Erasing original data of the second test block and writing the test data into the second test block;

[0027] Reading the second test block to obtain second read data, and determining whether the second read data is consistent with the test data;

[0028] If the second read data is consistent with the test data, skipping the preset time interval, returning to erase the original data of the second test block, and writing the test data into the second test block;

[0029] If the second read data is inconsistent with the test data, the second test block is marked as a bad block, and the last test number is recorded to obtain a second test number value, wherein the second test number value is the accelerated service life of the standard NAND FLASH during the fast test;

[0030] The preset acceleration factor is obtained by dividing the first test number value by the second test number value.

[0031] In some embodiments, determining the actual service life of the NAND FLASH according to the number of tests and a preset acceleration factor includes:

[0032] The actual service life of the NAND FLASH is obtained by multiplying the test number value by the preset acceleration factor.

[0033] In some embodiments, the test device includes a temperature module and a voltage module, wherein the temperature module is used to control the temperature of the NAND FLASH during the test, and the voltage module is used to control the voltage of the NAND FLASH during the test; after establishing communication with the NAND FLASH, the method further includes:

[0034] Controlling the temperature module and the voltage module to perform initial adjustment on the temperature and the voltage to obtain an initial temperature and an initial voltage;

[0035] After the quick test instruction, the method further includes:

[0036] The temperature module is controlled to adjust the initial temperature to a preset test temperature, and the voltage module is controlled to adjust the initial voltage to a preset test voltage.

[0037] The present invention also proposes a rapid testing system for NAND FLASH life, which includes a testing device and NAND FLASH, wherein the testing device communicates with the NAND FLASH using a serial peripheral interface or a programmable peripheral interface; the rapid testing system for NAND FLASH life can execute any of the rapid testing methods for NAND FLASH life described above.

[0038] The present invention also provides a NAND FLASH life fast testing device, comprising:

[0039] at least one processor; and,

[0040] a memory communicatively connected to the at least one processor; wherein,

[0041] The memory stores instructions to be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute any one of the above-mentioned methods for quickly testing the life of the NAND FLASH.

[0042] The present invention also provides a NAND FLASH life fast test host, which includes a test host body and multiple NAND FLASH life fast test systems as described above; multiple test devices are installed on the test host body.

[0043] The present invention allows a test device to directly skip a preset time interval and enter a next erase / write test after completing one erase / write test during the process of testing the actual service life of the NAND FLASH. After completing the test, a test number value corresponding to the previous test number is obtained, and the actual service life of the NAND FLASH can be calculated according to the test number value and a preset acceleration factor. The test device can quickly obtain the actual service life of the NAND FLASH by skipping the preset time interval and restoring using the preset acceleration factor, thereby shortening the test time of the NAND FLASH life and improving the test efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 Schematic diagram of the process of the rapid testing method of NAND FLASH life of the present invention;

[0045] Figure 2 Another schematic flow chart of the method for rapidly testing the life of NAND FLASH according to the present invention;

[0046] Figure 3 Another schematic flow chart of the method for rapidly testing the life of NAND FLASH according to the present invention;

[0047] Figure 4 Schematic diagram of the structure of the rapid testing system for NAND FLASH life of the present invention;

[0048] Figure 5 The figure is a schematic structural diagram of a fast NAND FLASH life test device according to an embodiment of the present invention.

[0049] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings and in conjunction with the embodiments. DETAILED DESCRIPTION

[0050] The following will be combined with the accompanying drawings to clearly and completely describe the solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0051] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0052] It should also be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element.

[0053] In addition, the descriptions of "first", "second", etc. in the present invention are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0054] To achieve the above objectives, the present invention proposes a method for quickly testing the life of a NAND FLASH. The method comprises:

[0055] Step S110, erasing the original data of the test block of the NAND FLASH and writing the test data into the test block;

[0056] Step S120, read the test block to obtain read data, and determine whether the read data is consistent with the test data; if consistent, execute step S130; if inconsistent, execute step S140;

[0057] Step S130, skip the preset time interval and return to step S110;

[0058] Step S140: Mark the test block as a bad block and record the last test number to obtain a test number value;

[0059] Step S150 : determining the actual service life of the NAND FLASH according to the number of tests and a preset acceleration factor.

[0060] In this embodiment, referring to Figure 1 and Figure 4The rapid testing method for NAND FLASH life is applied to a rapid testing system for NAND FLASH life; wherein NAND FLASH refers to SPI NAND Flash or PPI NAND Flash. The rapid testing system for NAND FLASH life may include NAND FLASH and a testing device; wherein the testing device is a device for testing the life of NAND FLASH. NAND FLASH includes multiple storage blocks, and the test block is any one of the storage blocks; wherein the test number value is the accelerated service life of NAND FLASH during the rapid test. In this embodiment, the execution subject of the method steps is the testing device.

[0061] It is understood that, in this embodiment, the lifespan of the NAND FLASH refers to the lifespan of the NAND FLASH in a normal environment (ie, the number of times the NAND FLASH can be erased and written in a normal environment, wherein one complete erase / write is considered one time).

[0062] The test equipment first completely erases the original data in the NAND FLASH test block, leaving the test block as a blank storage block. During the test equipment's erasure, the data previously stored in the test block remains the original data. After completely erasing the original data in the test block, the test equipment then writes test data to the test block.

[0063] The test data may include odd test data and even test data. The test data may be changed based on the current test count. If the current test count is odd, the test data written is odd test data; if the current test count is even, the test data written is even test data. For example, if the odd test data is set to 0x5555 and the even test data is set to 0xAAAA, then if the current test count is odd, 0x5555 is written. If the current test count is even, 0xAAAA is written. It is understood that the test data may also be other data.

[0064] After the test equipment writes the test data to the test block, the test block completes an erase / write test. At this point, to determine whether the test block can still be used (whether the erase / write limit has been reached), the test equipment must determine whether the read data from the test block is consistent with the test data. The test equipment reads the test block, obtains the read data, and then compares the read data with the test data just written to determine whether the read data is consistent with the test data.

[0065] If the read data matches the test data, it means the test block can still be used and the erase / write function has not been exhausted. The test equipment will then skip the preset time interval and immediately proceed to the next test. The preset time interval can be 18 seconds. The average NAND FLASH lifespan is 50,000 to 100,000 cycles. For example, if a NAND FLASH lifespan of 50,000 cycles is required to wait 18 seconds after each erase / write test, the total test time will be extended by 50,000 18-second intervals, or 250 hours. Skipping the preset time interval significantly reduces the total test time and improves test efficiency.

[0066] If the read data is inconsistent with the test data, it means that the test block can no longer be used and the number of erasures and writes has been used up. The test equipment will mark the test block as a bad block and record the last test number to obtain the test number value. The last test number can be obtained by subtracting 1 from the current test number. The test number value is the accelerated service life of the NAND FLASH during the quick test. This is because the preset time interval is to prevent excessive degradation of the storage block and affect the life test results of the NAND FLASH. Therefore, if the test at the preset time interval is skipped, the test number value obtained is not the actual service life of the NAND FLASH, but the accelerated service life of the NAND FLASH.

[0067] The test equipment also stores a preset acceleration factor; by restoring and calculating the test times according to the preset acceleration factor, the impact of skipping the preset time interval can be eliminated and the actual service life of the NAND FLASH can be obtained.

[0068] In this embodiment, during the process of testing the actual service life of the NAND FLASH by the test equipment, after completing one erase and write test, the preset time interval is directly skipped to enter the next erase and write test; after completing the test and obtaining the test number value corresponding to the previous test number, the actual service life of the NAND FLASH can be calculated based on the test number value and the preset acceleration factor; the test equipment can quickly obtain the actual service life of the NAND FLASH by skipping the preset time interval and restoring using the preset acceleration factor, thereby shortening the test time of the NAND FLASH life and improving the test efficiency.

[0069] In some embodiments, before the test device erases the original data of the test block of the NAND FLASH and writes the test data into the test block, the test device further includes:

[0070] Step S100, establishing communication with NAND FLASH;

[0071] Step S101 : determining a test block from a plurality of storage blocks of the NAND FLASH according to a quick test instruction.

[0072] In this embodiment, referring to Figure 2 Before executing step S100, the test device must first establish communication with the NAND FLASH. First, if you want to test the life of the NAND FLASH, you must first connect the NAND FLASH to the test device. After the NAND FLASH is connected to the test device, the test device can establish communication with the NAND FLASH. Then, the test device will randomly select a storage block from multiple storage blocks of the NAND FLASH according to the quick test instruction, and determine this selected storage block as the test block. The test device may include multiple SPI interfaces and multiple PPI interfaces. When the NAND FLASH is SPI NAND Flash, the SPI NAND Flash needs to be connected to the SPI interface of the test device, and the test device communicates with the SPI NAND Flash through the SPI interface. When the NAND FLASH is PPI NAND Flash, the PPI NAND Flash needs to be connected to the PPI interface of the test device, and the test device communicates with the PPI NAND Flash through the PPI interface.

[0073] In some embodiments, before establishing communication with the NAND FLASH, the process further includes:

[0074] Step S200, establishing communication with a standard NAND FLASH, wherein the standard NAND FLASH is a NAND FLASH whose actual service life meets production requirements;

[0075] Step S210, generating a first standard test instruction and a first fast test instruction according to the standard NAND FLASH;

[0076] Step S220, determining a first test block from a plurality of storage blocks of the standard NAND FLASH according to a first standard test instruction;

[0077] Step S230: determining a second test block from a plurality of storage blocks of the standard NAND FLASH according to the first fast test instruction.

[0078] In this embodiment, referring to Figure 3Before executing step S100, the test device processes the standard NAND FLASH. The standard NAND FLASH is a NAND FLASH whose actual service life meets the production requirements. First, connect the standard NAND FLASH to the test device; then the test device establishes communication with the standard NAND FLASH. The test device generates two test instructions based on the standard NAND FLASH, namely a first standard test instruction and a first quick test instruction. Then, according to the first standard test instruction, a first test block is determined from multiple storage blocks of the standard NAND FLASH. According to the first quick test instruction, a second test block is determined from multiple storage blocks of the standard NAND FLASH. The first test block and the second test block cannot be the same storage block.

[0079] In some embodiments, after determining the first test block from a plurality of storage blocks of the standard NAND FLASH according to the first standard test instruction, the method further includes:

[0080] Erasing original data of the first test block and writing test data into the first test block;

[0081] Reading a first test block to obtain first read data, and determining whether the first read data is consistent with the test data;

[0082] If the first read data is consistent with the test data, then after a preset time interval, returning to execute erasing the original data of the first test block and writing the test data into the first test block;

[0083] If the first read data is inconsistent with the test data, the first test block is marked as a bad block, and the last test number is recorded to obtain a first test number value, wherein the first test number value is the actual service life of the standard NAND FLASH during the standard test.

[0084] In this embodiment, the testing device erases original data of the first test block and writes test data into the first test block; reads the first test block to obtain first read data, and determines whether the first read data is consistent with the test data.

[0085] If the first read data matches the test data, the device returns to erase the original data in the first test block and writes the test data to the first test block after a preset time interval. When performing standard tests on standard NAND FLASH, the test device does not skip the preset time interval. Instead, it enters the next test after the preset time interval, which can prevent excessive degradation of the storage block.

[0086] If the first read data is inconsistent with the test data, the first test block is marked as a bad block and the last test number is recorded to obtain a first test number value. Because the test equipment does not skip the preset time interval, the first test number value obtained in this test is the actual service life of the standard NAND FLASH.

[0087] The test equipment may include a temperature sensor, which may acquire temperature changes of the standard NAND FLASH during a standard test process.

[0088] In some embodiments, after determining the second test block from a plurality of storage blocks of the standard NAND FLASH according to the first fast test instruction, the method further includes:

[0089] Erasing original data of the second test block and writing test data into the second test block;

[0090] Reading a second test block to obtain second read data, and determining whether the second read data is consistent with the test data;

[0091] If the second read data is consistent with the test data, skip the preset time interval, return to erase the original data of the second test block, and write the test data into the second test block;

[0092] If the second read data is inconsistent with the test data, the second test block is marked as a bad block, and the last test number is recorded to obtain a second test number value, wherein the second test number value is the accelerated service life of the standard NAND FLASH during the fast test;

[0093] The first test number value is divided by the second test number value to obtain a preset acceleration factor.

[0094] In this embodiment, the testing device erases original data of the second test block and writes test data into the second test block; reads the second test block to obtain second read data, and determines whether the second read data is consistent with the test data.

[0095] If the second read data is consistent with the test data, the preset time interval is skipped and the process returns to erase the original data of the second test block and write the test data into the second test block. When the test equipment performs a fast test on standard NAND FLASH, the preset time interval is skipped and the next test is directly entered.

[0096] If the second read data is inconsistent with the test data, the second test block is marked as a bad block, and the previous test number is recorded to obtain the second test number value. Because the test equipment skips the preset time interval, the second test number value obtained by this test is not the actual service life of the standard NAND FLASH, but the accelerated service life of the standard NAND FLASH.

[0097] The preset acceleration factor can be obtained by dividing the actual service life of the standard NAND FLASH by the accelerated service life of the standard NAND FLASH (ie, dividing the first test number value by the second test number value).

[0098] In some embodiments, the above-mentioned determination of the actual service life of the NAND FLASH based on the number of tests and a preset acceleration factor includes:

[0099] Multiply the test times by the preset acceleration factor to get the actual service life of the NAND FLASH.

[0100] In this embodiment, after the test device obtains the preset acceleration factor, it can test the NAND FLASH. The test device tests the NAND FLASH according to the quick test instruction, thereby obtaining a test count value. The test count value is multiplied by the preset acceleration factor to obtain the actual service life of the NAND FLASH (i.e., the accelerated service life of the NAND FLASH is multiplied by the preset acceleration factor to obtain the actual service life of the NAND FLASH).

[0101] In some embodiments, the test device includes a temperature module and a voltage module, wherein the temperature module is used to control the temperature of the NAND FLASH during the test process, and the voltage module is used to control the voltage of the NAND FLASH during the test process; after establishing communication with the NAND FLASH, the test device further includes:

[0102] Controlling the temperature module and the voltage module to initialize and adjust the temperature and voltage to obtain the initial temperature and initial voltage;

[0103] After the quick test instruction, the above also includes:

[0104] The temperature control module adjusts the initial temperature to a preset test temperature, and the voltage control module adjusts the initial voltage to a preset test voltage.

[0105] In this embodiment, the test equipment may further include a temperature module and a voltage module. The temperature module is used to control the temperature of the NAND FLASH during testing, and the voltage module is used to control the voltage of the NAND FLASH during testing. After establishing communication with the NAND FLASH, the test equipment will also perform initial adjustments to the temperature and voltage to obtain an initial temperature and initial voltage. The test equipment may further include a temperature sensor that can detect temperature changes of a standard NAND FLASH during a standard test. The test equipment can control the temperature module to adjust the initial temperature to a preset test temperature based on the temperature changes during the standard NAND FLASH test. The preset test temperature is variable and can be adjusted based on the temperature changes during the standard NAND FLASH test, simulating a standard test temperature environment for the NAND FLASH and reducing the impact of the external environment on the NAND FLASH test. The voltage module adjusts the initial voltage to a preset test voltage; the preset test voltage can be determined based on the voltage specifications of the test block.

[0106] The present invention allows a test device to directly skip a preset time interval and enter a next erase / write test after completing one erase / write test during the process of testing the actual service life of the NAND FLASH. After completing the test, a test number value corresponding to the previous test number is obtained, and the actual service life of the NAND FLASH can be calculated according to the test number value and a preset acceleration factor. The test device can quickly obtain the actual service life of the NAND FLASH by skipping the preset time interval and restoring using the preset acceleration factor, thereby shortening the test time of the NAND FLASH life and improving the test efficiency.

[0107] The present invention also proposes a rapid testing system for NAND FLASH life, which includes a testing device and NAND FLASH, wherein the testing device and NAND FLASH communicate using a serial peripheral interface or a programmable peripheral interface; the rapid testing system for NAND FLASH life can execute any of the rapid testing methods for NAND FLASH life described above.

[0108] In this embodiment, see Figure 4 A fast NAND FLASH life test system includes a test device and a NAND FLASH. The NAND FLASH includes multiple memory blocks. The test device and the NAND FLASH communicate using a serial peripheral interface or a programmable peripheral interface.

[0109] The present invention also proposes a fast testing device for NAND FLASH life, see Figure 5 , Figure 5 It is a structural diagram of a device for quickly testing the life of NAND FLASH in a hardware operating environment according to an embodiment of the present invention.

[0110] The NAND FLASH life fast test device of the embodiment of the present invention can be a processor capable of running the NAND FLASH life fast test method; the processor has at least one. Figure 5 As shown, the rapid testing device for the life of the NAND FLASH may include: a processor 1001 (e.g., a CPU), a network interface 1004, a user interface 1003, a memory 1005, and a communication bus 1002. The communication bus 1002 is used to realize the connection and communication between these components. The user interface 1003 may include a display screen (Display), an input unit, such as a keyboard (Keyboard), and the user interface 1003 may also include a standard wired interface and a wireless interface. The network interface 1004 may optionally include a standard wired interface and a wireless interface (such as a WI-FI interface). The memory 1005 may be a high-speed RAM memory, or a stable memory (non-volatile memory), such as a disk memory. The memory 1005 may optionally be a storage device independent of the aforementioned processor 1001.

[0111] Those skilled in the art will understand that Figure 5 The structure of the fast NAND FLASH life test device shown in the figure does not constitute a limitation on the fast NAND FLASH life test device, and may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently.

[0112] like Figure 5 As shown, the memory 1005 as a computer storage medium may include an operating system, a network communication module, a user interface module and a computer program.

[0113] exist Figure 5 In the NAND FLASH life fast test device shown, the network interface 1004 is mainly used to connect to the background server and communicate data with the background server; the user interface 1003 is mainly used to connect to the client (user end) and communicate data with the client; and the processor 1001 can be used to call the computer program stored in the memory 1005. When the computer program is called and executed by the processor 1001, the steps of the above-mentioned NAND FLASH life fast test method are implemented.

[0114] The present invention also provides a NAND FLASH life fast test host, which includes a test host body and multiple NAND FLASH life fast test systems as described above; multiple test devices are installed on the test host body.

[0115] In this embodiment, a NAND FLASH lifespan rapid testing host includes a testing host and multiple NAND FLASH lifespan rapid testing systems. Multiple testing devices are mounted on the testing host. This allows the NAND FLASH lifespan rapid testing host to simultaneously perform NAND FLASH lifespan rapid testing on multiple NAND FLASHs, improving testing efficiency.

[0116] Based on the computer program proposed in the aforementioned embodiment, the present invention further proposes a storage medium storing the computer program. When the computer program is executed by a controller, the method for quickly testing the life of a NAND FLASH described in the aforementioned embodiment is implemented.

[0117] The present invention also provides a storage medium having a computer program stored thereon. When the computer program is executed by a processor, the steps of the method for quickly testing the life of a NAND FLASH as described in any one of the above technical solutions are implemented.

[0118] The above description is only a partial or preferred embodiment of the present invention. Neither the text nor the drawings can limit the scope of protection of the present invention. All equivalent structural transformations made by using the contents of the present invention description and drawings under the overall concept of the present invention, or direct / indirect application in other related technical fields are included in the scope of protection of the present invention.

Claims

1. A method for quickly testing the life of NAND FLASH, characterized in that: The quick test method for NAND FLASH life includes: The testing device erases original data of a test block of the NAND FLASH and writes test data into the test block, wherein the testing device is a device for testing the life of the NAND FLASH, the NAND FLASH includes multiple storage blocks, and the test block is any one of the storage blocks; Reading the test block to obtain read data, and determining whether the read data is consistent with the test data; If the read data is consistent with the test data, skipping the preset time interval, returning to execute erasing the original data of the test block of NANDFLASH, and writing the test data into the test block; If the read data is inconsistent with the test data, the test block is marked as a bad block, and the last test number is recorded to obtain a test number value, wherein the test number value is the accelerated service life of the NAND FLASH during the fast test; Determining the actual service life of the NAND FLASH according to the test number value and a preset acceleration factor; Before the test device erases the original data of the test block of the NAND FLASH and writes the test data into the test block, the test device further includes: Establishing communication with the NAND FLASH; Determining the test block from the plurality of storage blocks of the NAND FLASH according to a fast test instruction; Before establishing communication with the NAND FLASH, the method further includes: Establish communication with standard NAND FLASH, where the standard NAND FLASH is a NAND FLASH whose actual service life meets production requirements; Generate a first standard test instruction and a first fast test instruction according to the standard NAND FLASH; determining a first test block from a plurality of storage blocks of the standard NAND FLASH according to the first standard test instruction; determining a second test block from a plurality of storage blocks of the standard NAND FLASH according to the first fast test instruction; After determining the first test block from the plurality of storage blocks of the standard NAND FLASH according to the first standard test instruction, the method further includes: Erasing original data of the first test block and writing the test data into the first test block; Reading the first test block to obtain first read data, and determining whether the first read data is consistent with the test data; If the first read data is consistent with the test data, then after the preset time interval, returning to erase the original data of the first test block and writing the test data into the first test block; If the first read data is inconsistent with the test data, the first test block is marked as a bad block, and the last test number is recorded to obtain a first test number value, wherein the first test number value is the actual service life of the standard NANDFLASH during the standard test; After determining the second test block from the plurality of storage blocks of the standard NAND FLASH according to the first fast test instruction, the method further includes: Erasing original data of the second test block and writing the test data into the second test block; Reading the second test block to obtain second read data, and determining whether the second read data is consistent with the test data; If the second read data is consistent with the test data, skipping the preset time interval, returning to erase the original data of the second test block, and writing the test data into the second test block; If the second read data is inconsistent with the test data, the second test block is marked as a bad block, and the last test number is recorded to obtain a second test number value, wherein the second test number value is the accelerated service life of the standard NANDFLASH during the fast test; Dividing the first test number value by the second test number value to obtain the preset acceleration factor; The determining the actual service life of the NAND FLASH according to the number of tests and a preset acceleration factor includes: Multiplying the test number value by the preset acceleration factor to obtain the actual service life of the NAND FLASH; When the standard test is performed on the standard NAND FLASH, the preset time interval is not skipped; when the fast test is performed on the standard NAND FLASH, the preset time interval is skipped.

2. The rapid testing method for NAND FLASH life according to claim 1, characterized in that: The test device includes a temperature module and a voltage module, wherein the temperature module is used to control the temperature of the NAND FLASH during the test process, and the voltage module is used to control the voltage of the NAND FLASH during the test process; after establishing communication with the NAND FLASH, the device further includes: Controlling the temperature module and the voltage module to perform initial adjustment on the temperature and the voltage to obtain an initial temperature and an initial voltage; After the quick test instruction, the method further includes: The temperature module is controlled to adjust the initial temperature to a preset test temperature, and the voltage module is controlled to adjust the initial voltage to a preset test voltage.

3. A fast testing system for NAND FLASH life, characterized in that: The rapid testing system for NAND FLASH life includes a testing device and NAND FLASH, and the testing device communicates with the NAND FLASH using a serial peripheral interface or a programmable peripheral interface; the rapid testing system for NAND FLASH life can execute the rapid testing method for NAND FLASH life according to any one of claims 1 to 2.

4. A fast testing device for NAND FLASH life, characterized in that: include: at least one processor; as well as, a memory communicatively connected to the at least one processor; wherein, The memory stores instructions to be executed by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to execute the method for quickly testing the life of the NAND FLASH according to any one of claims 1 to 2.

5. A NAND FLASH life fast test host, characterized in that: The NAND FLASH life fast test host comprises a test host body and a plurality of NAND FLASH life fast test systems according to claim 3; a plurality of the test devices are mounted on the test host body.

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