Interference phase cancellation phase shifter

By designing an interference depletion structure in the phase shifter, and using the power division module and the modulation module to perform equalization and phase modulation compensation on the carrier, the problems of low power capacity and large plug-in loss in the traditional phase shifter are solved, and higher power capacity and lower plug-in loss are achieved.

CN119727646APending Publication Date: 2025-03-28成都智芯雷通微系统技术有限公司
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Patent Information

Application Number
CN202411602639.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-11
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

Traditional phase shifters have low power capacity and large plug-in loss.

Method used

An interference phase deflector is designed, and the input carrier is divided equally by the power division module to form two carriers. The modulation module is used to phase modulate one carrier and phase compensate the other carrier, so that the phase difference between the two carriers is 180°, realizing interference decompression.

Benefits of technology

This design does not require relying on microwave circuits, and has a simple structure. It uses HEMT diodes to achieve phase modulation, reduces insertion loss, and improves high-frequency performance. It is suitable for microwave devices.

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Abstract

The invention relates to the field of communication, in particular to an interference cancellation phase shifter, which comprises a power division module, a first subcarrier, a second subcarrier, a phase shifting module and a phase shifting module, and is characterized in that the power division module is used for equally dividing power of an input carrier to form a first subcarrier and a second subcarrier; the first subcarrier and the second subcarrier have the same amplitude and the same phase; the modulation module is used for performing phase modulation on the first subcarrier and performing phase compensation on the second subcarrier; the phase difference between the first subcarrier after phase modulation and the second subcarrier after phase compensation is 180 degrees, and the first subcarrier after phase modulation and the second subcarrier after phase compensation have the same power; the combining module is used for combining and outputting the first subcarrier subjected to phase modulation and the second subcarrier subjected to phase compensation; the power dividing module, the modulation module and the combining module are connected in sequence. The phase shifter can realize destructive interference without relying on a microwave circuit.
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Description

Technical Field

[0001] The present invention relates to a phase shifter, in particular to an interference destructive phase shifter. Background Art

[0002] A phase shifter is a two-port device that can change the signal phase while keeping the signal amplitude unchanged, so that there is a certain phase difference between the input signal and the output signal. The design principle of traditional phase shifters relies on microwave circuits and is composed of various resistors, reactances and nonlinear elements. After a sine wave signal passes through a phase shifter, the phase will change, but the signal amplitude will not change. In addition, traditional phase shifters use various circuit components, which will increase insertion loss. The power capacity that the phase shifter can withstand is also relatively low, and its use is limited.

[0003] In view of this, this application is hereby filed. Summary of the invention

[0004] The technical problem to be solved by the present invention is that the traditional phase shifter has low power capacity and large insertion loss.

[0005] In order to solve the above technical problems, the present invention is implemented by the following technical solutions:

[0006] An interference destructive phase shifter, characterized in that it includes: a power division module, used to divide the power of an input carrier equally to form a first subcarrier and a second subcarrier; the first subcarrier and the second subcarrier have the same amplitude and the same phase; a modulation module, used to phase modulate the first subcarrier and phase compensate the second subcarrier; the phase difference between the first subcarrier after phase modulation and the second subcarrier after phase compensation is 180°, and the first subcarrier after phase modulation and the second subcarrier after phase compensation have the same power; a combining module, used to combine the first subcarrier after phase modulation and the second subcarrier after phase compensation for output; the power division module, the modulation module and the combining module are connected in sequence.

[0007] Furthermore, the modulation module includes: a first modulation unit, used to phase modulate the first subcarrier according to a modulation signal; a second modulation unit, used to phase compensate the second subcarrier; one end of the first modulation unit is connected to the first output end of the power division module, and the other end of the first metal transmission line is connected to the first input end of the combining module; one end of the second modulation unit is connected to the second output end of the power division module, and the other end of the second modulation unit is connected to the second input end of the combining module.

[0008] Furthermore, the first modulation unit includes: a first metal transmission line, used to transmit the first subcarrier; a powered electrode, used to convert the modulation signal into a control signal; a phase modulation structure, used to phase modulate the first subcarrier transmitted on the first metal transmission line according to the control signal; the phase modulation structure is arranged between the input end of the first metal transmission line and the output end of the first metal transmission line, and the phase modulation structure is connected to the output end of the powered electrode.

[0009] Furthermore, the second modulation unit includes: a second metal transmission line, used to transmit the second subcarrier; a phase compensation structure, used to perform phase compensation on the second subcarrier transmitted on the second metal transmission line; the phase compensation structure is arranged between the input end of the second metal transmission line and the output end of the second metal transmission line.

[0010] Furthermore, the phase modulation structure includes: a mounting bracket and a plurality of HEMT diodes; the mounting bracket is arranged between the input end of the first metal transmission line and the output end of the first metal transmission line; the plurality of HEMT diodes are used to control the transmission phase velocity of the first subcarrier on the first metal transmission line according to the control signal, and the plurality of HEMT diodes are arranged on the mounting bracket.

[0011] Furthermore, the interference destructive phase shifter also includes: a signal generating module, used to generate the modulation signal; the output end of the signal generating module is connected to the input end of the powered electrode.

[0012] Furthermore, the interference destructive phase shifter also includes: an input signal transmission line for transmitting the input carrier; an output signal transmission line for transmitting the carrier output by the combining module; the input signal transmission line is connected to the input end of the power division module, and the output signal transmission line is connected to the output end of the combining module.

[0013] Furthermore, the interference destructive phase shifter also includes: a substrate; the power division module, the modulation module, the combining module, the input signal transmission line and the output signal transmission line are all arranged on the substrate.

[0014] Furthermore, the substrate is made of SIC material; and the surface of the substrate includes a gold-plated layer.

[0015] Compared with the prior art, the present invention has the following advantages and beneficial effects: the Mach-Zehnder electro-optic modulator principle, the interference cancellation principle and the traditional phase shifter design principle are combined, and the input carrier is divided into two carriers with equal amplitude and phase, and the phase of one carrier is modulated and the phase of the other carrier is compensated, so that the phases of the two carriers differ by 180 degrees, thereby realizing interference cancellation; the structure does not need to rely on microwave circuits and has a simple structure; the phase of one carrier is modulated by a HEMT diode, and the phase of the carrier is jumped by turning the HEMT diode on and off, so that a phase difference is generated between the two carriers, and the structure can ensure that the speed of the structure on and off is not affected, thereby not affecting the modulation efficiency, and the HEMT diode is easy to load, simple in structure, low in insertion loss and good in high-frequency performance, and is suitable for microwave devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 A schematic diagram of the structure of an interferometric destructive phase shifter provided in an embodiment of the present invention;

[0018] Figure 2 A schematic diagram of the structure of a first modulation unit provided in an embodiment of the present invention;

[0019] Figure 3 A diagram of simulation results provided by an embodiment of the present invention when the first modulation unit and the second modulation unit are not loaded;

[0020] Figure 4 A diagram showing simulation results of a HEMT diode in a closed state provided by an embodiment of the present invention;

[0021] Figure 5 This is a diagram of simulation results when the HEMT diode provided by an embodiment of the present invention is in a disconnected state.

[0022] Marks and corresponding parts names in the attached drawings:

[0023] 1-power division module, 2-modulation module, 3-combining module, 21-first modulation unit, 22-second modulation unit, 211-first metal transmission line, 212-powered electrode, 213-phase modulation structure, 221-second metal transmission line, 222-phase compensation structure. DETAILED DESCRIPTION

[0024] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments and drawings. The exemplary embodiments of the present invention and their description are only used to explain the present invention and are not intended to limit the present invention.

[0025] In the following description, a large number of specific details are set forth in order to provide a thorough understanding of the present invention. However, it is apparent to one of ordinary skill in the art that these specific details are not necessarily employed to practice the present invention. In other embodiments, in order to avoid obscuring the present invention, well-known structures, circuits, materials, or methods are not specifically described.

[0026] Throughout the specification, references to "one embodiment," "an embodiment," "an example," or "an example" mean that a particular feature, structure, or characteristic described in conjunction with the embodiment or example is included in at least one embodiment of the present invention. Therefore, the phrases "one embodiment," "an embodiment," "an example," or "an example" appearing in various places throughout the specification do not necessarily all refer to the same embodiment or example. In addition, particular features, structures, or characteristics may be combined in one or more embodiments or examples in any suitable combination and / or sub-combination. In addition, it will be appreciated by those of ordinary skill in the art that the figures provided herein are for illustrative purposes and that the figures are not necessarily drawn to scale. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0027] In the description of the present invention, the directions or positional relationships indicated by terms such as “front”, “rear”, “left”, “right”, “up”, “down”, “vertical”, “horizontal”, “high”, “low”, “inside” and “outside” are based on the directions or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limiting the scope of protection of the present invention.

[0028] Embodiment: Based on the Mach-Zehnder electro-optic modulator principle, the interference destructive principle, the traditional phase shifter design association and the vector synthesis principle, this embodiment proposes an interference destructive phase shifter, which realizes that when the phase difference between the two carriers is 0°, the output carrier amplitude is not affected, which is equivalent to outputting "1", and when the phase difference between the two carriers is 180°, the output carriers interfere destructively when the two carriers are synthesized, which is equivalent to outputting "0".

[0029] Before introducing in detail the specific structure of an interference destructive phase shifter proposed in this embodiment, the design concept and principle of the interference destructive phase shifter are first explained as follows:

[0030] Define the formula based on the phase signal Where, transmission time t = l / vp (2); In formula (1), f represents the frequency of the signal, in formula (2), l represents the transmission path of the signal, and v p It represents the transmission phase velocity of the signal. According to the above equations (1) and (2), it can be known that the phase shifter can be designed by changing the transmission phase velocity of the signal.

[0031] like Figure 1 As shown, the interferometric destructive phase shifter has a power division module 1, a modulation module 2 and a combining module 3. The power division module 1 is used to divide the power of the input carrier equally to form a first subcarrier and a second subcarrier; wherein the first subcarrier and the second subcarrier have the same amplitude and the same phase. The modulation module 2 is used to phase modulate the first subcarrier and perform phase compensation on the second subcarrier; the phase difference between the first subcarrier after phase modulation and the second subcarrier after phase compensation is 180°, and the first subcarrier after phase modulation and the second subcarrier after phase compensation have the same power. The combining module 3 is used to combine and output the first subcarrier after phase modulation and the second subcarrier after phase compensation. In terms of connection relationship, the power division module 1, the modulation module 2 and the combining module 3 are connected in sequence. Specifically, the modulation module 2 is divided into a first modulation unit 21 and a second modulation unit 22. The first modulation unit 21 is used to phase modulate the first subcarrier according to the modulation signal; the second modulation unit 22 is used to phase compensate the second subcarrier. In terms of connection relationship, one end of the first modulation unit 21 is connected to the first output end of the power division module 1, and the other end of the first metal transmission line 211 is connected to the first input end of the combining module 3; one end of the second modulation unit 22 is connected to the second output end of the power division module 1, and the other end of the second modulation unit 22 is connected to the second input end of the combining module 3.

[0032] Furthermore, Figure 1 As shown, the first modulation unit 21 is composed of a first metal transmission line 211, a powered electrode 212 and a phase modulation structure 213. Among them, the first metal transmission line 211 is used to transmit a first subcarrier; the powered electrode 212 is used to convert a modulation signal into a control signal; the phase modulation structure 213 is used to phase modulate the first subcarrier transmitted on the first metal transmission line 211 according to the control signal. In terms of position and connection relationship, the phase modulation structure 213 is arranged between the input end of the first metal transmission line 211 and the output end of the first metal transmission line 211, and the phase modulation structure 213 is connected to the output end of the powered electrode 212; in addition, the input end of the powered electrode 212 is connected to the output end of the signal generation module, and the signal generation module is used to generate the modulation signal. Continue to refer to Figure 1, the second modulation unit 22 is composed of a second metal transmission line 221 and a phase compensation structure. The second metal transmission line 221 is used to transmit the second subcarrier; the phase compensation structure 222 is used to perform phase compensation on the second subcarrier transmitted on the second metal transmission line 221. In terms of position and connection relationship, the phase compensation structure 222 is arranged between the input end of the second metal transmission line 221 and the output end of the second metal transmission line 221. For further reference Figure 2 The phase modulation structure 213 is composed of a mounting bracket and a plurality of HEMT diodes. Figure 2 In the phase modulation structure 213 shown, two HEMT diodes are located on the mounting bracket, and the two HEMT diodes are used to control the transmission phase velocity of the first subcarrier on the first metal transmission line 211 according to the control signal. In terms of position and connection relationship, the mounting bracket is arranged between the input end of the first metal transmission line 211 and the output end of the first metal transmission line 211. In addition, the input end of the power division module 1 is connected to the input signal transmission line, and the output end of the combining module 3 is connected to the output signal transmission line. Among them, the input signal transmission line is used to transmit the input carrier; the output signal transmission line is used to transmit the carrier output by the combining module 3.

[0033] It should be noted that: First, Figure 1 and Figure 2It can be seen from the structural features of the interference destructive phase shifter shown that the interference destructive phase shifter is based on the Mach-Zehnder modulator structure as a whole. The power division module 1, modulation module 2, combining module 3, first metal transmission line 211 and second metal transmission line 221 are all prepared on a substrate. The substrate is made of SIC material and the surface is gold-plated, which is suitable for high frequency. The modulation module 2 is a metal structure as a whole. Two HEMT diodes are loaded on the first transmission line. Through an external modulation signal, the power electrode 212 changes the on and off of the HEMT diode based on the modulation signal, thereby causing the phase velocity of the first carrier to change during the transmission process, thereby realizing the phase change of the overall structure, and finally completing the phase shifter design. Second, the reason why the interference destructive phase shifter uses a microstrip transmission line is that the microstrip transmission line has a simple structure, low cost, and strong designability; third, the modulation junction module is designed by loading a HEMT diode with a metal structure. The HEMT diode is simple to prepare, has low insertion loss and excellent high-frequency performance, and is suitable for the application of microwave devices and circuits. Fourth, since the interference destructive phase shifter needs to achieve two-way interference, the power of the carrier on the first modulation arm and the second modulation arm must be equally divided, and the present structure only loads the HEMT diode on the first modulation arm, which will cause the carrier power on the first modulation arm and the second modulation arm to be unequal. Therefore, the present structure loads a phase compensation structure on the second modulation arm to make the power equally divided, so that the two transmitted waves can produce a state of interference destructive. Fifth, the advantage of the above-mentioned interference destructive phase shifter structure is that only the modulation structure needs to be loaded on one side of the modulation arm, which can ensure that the speed of the structure switching on and off is not affected, and will not affect the modulation efficiency. In addition, this structure is easy to load and simple to design.

[0034] In order to verify the technical effect of the interferometric destructive phase shifter, this embodiment uses CST simulation studio for simulation. First, without loading the modulation structure, the carrier is input from one end of the input signal transmission line, and the carrier is divided into two waves of equal amplitude and phase through the power division module. When no modulation signal is added, the two waves are directly synthesized and output at the combining module. The whole simulation result is as follows: Figure 3 Then, the modulation structure is loaded on the first modulation arm and the simulation is performed when the HEMT diode is in the closed state. Similarly, the carrier is input from one end of the input signal transmission line, and the carrier is divided into two waves of equal amplitude and phase through the power division module. When the modulation signal is loaded, the two waves are directly synthesized and output at the combining module. The whole simulation result is shown in Figure 4 Next, the modulation structure is loaded on the first modulation arm and the simulation is performed when the HEMT diode is in the off state. The simulation results are shown in Figure 5 As shown. Figures 3 to 5 The simulation results shown show that the two waves can interfere destructively during the modulation process.

[0035] In summary, the destructive interference phase shifter provided in this embodiment is based on the structure of the optical band Mach-Zehnder modulator. The carrier state transmitted by the second modulation arm is taken as the reference "0°". When the modulation signal is introduced, the HEMT diode is used to make the carrier phase on the first modulation arm jump, so that the two carriers have a large phase difference. When the phase difference is 180°, the two waves will produce destructive interference at the power synthesis point.

[0036] The specific implementation methods described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific implementation method of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. An interferometric destructive phase shifter, characterized in that: include: A power division module (1) is used to equally divide the power of an input carrier to form a first subcarrier and a second subcarrier; The first subcarrier and the second subcarrier have the same amplitude and the same phase; A modulation module (2) is used to perform phase modulation on the first subcarrier and perform phase compensation on the second subcarrier; the phase difference between the first subcarrier after phase modulation and the second subcarrier after phase compensation is 180°, and the first subcarrier after phase modulation and the second subcarrier after phase compensation have the same power; A combining module (3), used for combining and outputting the first subcarrier after phase modulation and the second subcarrier after phase compensation; The power division module (1), the modulation module (2) and the combining module (3) are connected in sequence.

2. The destructive interference phase shifter according to claim 1, characterized in that: The modulation module (2) comprises: A first modulation unit (21), configured to perform phase modulation on the first subcarrier according to a modulation signal; A second modulation unit (22), configured to perform phase compensation on the second subcarrier; One end of the first modulation unit (21) is connected to the first output end of the power division module (1), and the other end of the first metal transmission line (211) is connected to the first input end of the combining module (3); one end of the second modulation unit (22) is connected to the second output end of the power division module (1), and the other end of the second modulation unit (22) is connected to the second input end of the combining module (3).

3. The destructive interference phase shifter according to claim 2, characterized in that: The first modulation unit (21) comprises: A first metal transmission line (211), used for transmitting the first subcarrier; A powered electrode (212) for converting the modulation signal into a control signal; A phase modulation structure (213) configured to perform phase modulation on the first subcarrier transmitted on the first metal transmission line (211) according to the control signal; The phase modulation structure (213) is arranged between the input end of the first metal transmission line (211) and the output end of the first metal transmission line (211), and the phase modulation structure (213) is connected to the output end of the powered electrode (212); The second modulation unit (22) comprises: A second metal transmission line (221), used for transmitting the second subcarrier; A phase compensation structure (222) for performing phase compensation on the second subcarrier transmitted on the second metal transmission line (221); The phase compensation structure (222) is arranged between an input end of the second metal transmission line (221) and an output end of the second metal transmission line (221).

4. The destructive interference phase shifter according to claim 3, characterized in that: The phase modulation structure (213) comprises: a mounting bracket and a plurality of HEMT diodes; the mounting bracket is arranged between an input end of the first metal transmission line (211) and an output end of the first metal transmission line (211); the plurality of HEMT diodes are used to control the transmission phase velocity of the first subcarrier on the first metal transmission line (211) according to the control signal, and the plurality of HEMT diodes are arranged on the mounting bracket.

5. The destructive interference phase shifter according to claim 4, characterized in that: Also includes: A signal generating module, used for generating the modulated signal; The output end of the signal generation module is connected to the input end of the powered electrode (212).

6. The destructive interference phase shifter according to any one of claims 1 to 5, characterized in that: Also includes: An input signal transmission line, used for transmitting the input carrier; An output signal transmission line, used for transmitting the carrier wave output by the combining module (3); The input signal transmission line is connected to the input end of the power division module (1), and the output signal transmission line is connected to the output end of the combining module (3).

7. The destructive interference phase shifter according to claim 6, characterized in that: Also includes: substrate; The power division module (1), the modulation module (2), the combining module (3), the input signal transmission line and the output signal transmission line are all arranged on the substrate.

8. The destructive interference phase shifter according to claim 7, characterized in that: The substrate is made of SIC material; the surface of the substrate includes a gold-plated layer.