Switch module and communication equipment

Abstract

The invention relates to a switch module and communication equipment, which are used for improving the linearity range and the withstand voltage of the switch module and ensuring that indexes such as the insertion loss of the switch module and the switching time of the switch module are not reduced. The switching module includes a circuit input, a circuit output, and at least one switching die. The switch tube core comprises an input end, an output end and M series connection structures, each series connection structure in the M series connection structures comprises a plurality of sub-modules which are connected in series, each sub-module comprises a diode or a plurality of diodes which are connected in series, the plurality of sub-modules which are connected in series comprise a first sub-module and a second sub-module which are adjacent to each other, the first sub-module has a first polarity direction, the second sub-module has a second polarity direction, and the first polarity direction is opposite to the second polarity direction.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of communications, and in particular to a switch module and a communication device. Background Art

[0002] With the rapid development of wireless communication technology, higher and higher requirements are placed on the performance of RF systems. RF switches switch RF signals between different RF channels through different working states. The performance of RF switches determines the quality of RF signal transmission and reception.

[0003] Figure 1 is a structural example of an existing RF switch. The existing RF switch includes four diodes, namely, diode 121, diode 122, diode 123 and diode 124. The four diodes are in a time-sharing on or off state. For example, when diode 122 and diode 123 are in an off state, and diode 121 and diode 124 are in an on state, the RF channel between input port 101 and output port 112 of the RF switch is in an on state. When diode 121 and diode 124 are in an off state, and diode 122 and diode 123 are in an on state, the RF channel between input port 102 and output port 111 of the RF switch is in an on state.

[0004] In order to improve the range of linearity of existing RF switches, the usual method is to increase the number of diodes included in the RF switch or to increase the circuit complexity of the RF switch. However, as the number of diodes increases or as the circuit complexity of the RF circuit increases, the range of linearity of the RF switch will deteriorate, making it difficult to meet the requirements of the RF switch for conducting high-linear RF signals. Moreover, the range of linearity of the RF switch is restricted by indicators such as the withstand voltage, power, insertion loss, and switching time of the RF switch. Summary of the invention

[0005] The embodiments of the present application provide a switch module and a communication device, which are used to improve the linearity range and withstand voltage of the switch module while ensuring that indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced.

[0006] In a first aspect, an embodiment of the present application provides a switch module, comprising a circuit input end, a circuit output end, and at least one switch die, wherein the at least one switch die is connected between the circuit input end and the circuit output end. For example, the switch module comprises one switch die, wherein the switch die is connected in series between the input end and the circuit output end. For another example, the switch module comprises a plurality of switch die, wherein the plurality of switch die are connected in series, in parallel, or in series and parallel between the input end and the circuit output end. The switch core includes an input end, an output end and M series structures, where M is any integer greater than 1, the M series structures are connected in parallel to the input end, and the M series structures are connected in parallel to the output end, each of the M series structures includes a plurality of sub-modules connected in series with each other, each of the sub-modules includes a diode or a plurality of diodes connected in series with each other, the plurality of sub-modules connected in series with each other include a first sub-module and a second adjacent sub-module, the first sub-module has a first polarity direction, the second sub-module has a second polarity direction, the first polarity direction is opposite to the second polarity direction, and the plurality of diodes included in the switch core are all in an on state or in an off state.

[0007] By using the switch module shown in this aspect, the linearity range and withstand voltage of the switch module are improved while ensuring that the switch module insertion loss and switch module switching time and other indicators are not reduced, ensuring that the switch module conducts high-linearity RF signals. The linearity range of the switch module refers to the linearity range within which the output power of the switch module increases linearly with the input power.

[0008] Based on the first aspect, in an optional implementation, the first submodule includes a first diode, the first polarity direction is the polarity direction of the first diode, and the direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode. The second submodule includes a second diode, the second polarity direction is the polarity direction of the second diode, and the direction from the anode of the second diode to the cathode of the second diode is the polarity direction of the first diode.

[0009] By using the switch module shown in the present aspect, when each sub-module includes a diode, it is effectively ensured that the multiple diodes included in the switch core are all in the on state or in the off state, while improving the linearity range and withstand voltage of the switch module, ensuring that indicators such as the switch module insertion loss and the switch module switching time are not reduced.

[0010] Based on the first aspect, in an optional implementation, the first submodule includes a plurality of first diodes connected in series, and among the plurality of first diodes connected in series, any two different first diodes have the same polarity direction, and the first polarity direction is the polarity direction of each first diode, and the direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode. The second submodule includes a plurality of second diodes connected in series, and among the plurality of second diodes connected in series, any two different second diodes have the same polarity direction, and the first polarity direction is the polarity direction of each first diode, and the direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode.

[0011] By adopting the switch module shown in the present aspect, when each sub-module includes multiple diodes, it is effectively ensured that the multiple diodes included in the switch core are all in the on state or in the off state, while improving the linearity range and withstand voltage of the switch module, ensuring that indicators such as the switch module insertion loss and the switch module switching time are not reduced.

[0012] Based on the first aspect, in an optional implementation, the two ends of each of the series structures respectively include a first end diode and a second end diode, the first polarities of the M first end diodes included in the M series structures are connected in parallel to the input end, and the second polarities of the M second end diodes included in the M series structures are connected in parallel to the output end; if the series structure includes an even number of the sub-modules, the first polarity is the same as the second polarity, or, if the series structure includes an odd number of the sub-modules, the first polarity is opposite to the second polarity.

[0013] By using the switch module shown in this aspect, the linearity range and withstand voltage of the switch module are improved while ensuring that indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced, thereby ensuring that the switch module conducts high-linearity RF signals.

[0014] Based on the first aspect, in an optional implementation, the first submodule includes a first diode, the second submodule includes a second diode, the anode of the first diode is connected in series with the input end, the cathode of the first diode is connected in series with the cathode of the second diode, and the anode of the second diode is connected in series with the output end.

[0015] By using the switch module shown in the present aspect, when the anode of the first diode is connected in series with the input end, the cathode of the first diode is connected in series with the cathode of the second diode, and the anode of the second diode is connected in series with the output end, the anode of the first diode is connected in series with the input end, and the anode of the second diode is connected in series with the output end, then, while improving the linearity range and withstand voltage of the switch module, it is ensured that indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced.

[0016] Based on the first aspect, in an optional implementation, the first submodule includes a first diode, the second submodule includes a second diode, the cathode of the first diode is connected in series with the input end, the anode of the first diode is connected in series with the anode of the second diode, and the cathode of the second diode is connected in series with the output end.

[0017] By using the switch module shown in the present aspect, when the cathode of the first diode is connected in series with the input end, the anode of the first diode is connected in series with the anode of the second diode, and the cathode of the second diode is connected in series with the output end, the cathode of the first diode is connected in series with the input end, and the cathode of the second diode is connected in series with the output end, then, while improving the linearity range and withstand voltage of the switch module, it is ensured that indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced.

[0018] Based on the first aspect, in an optional implementation, each of the series structures includes an even number of the sub-modules.

[0019] By using the switch module shown in the present aspect, when each series structure includes an even number of sub-modules, it is ensured that the polarity direction of the first end diode of each series structure is opposite to the polarity direction of the second end diode, so as to ensure that the first polarity connected to the input end and the second polarity connected to the output end are the same. Then, it is effectively ensured that all the diodes included in the series structure are in the on state or in the off state, and while improving the linearity range and withstand voltage of the switch module, it is ensured that the switch module insertion loss and the switch module switching time and other indicators are not reduced, which effectively limits the mutual constraints between the linearity range, withstand voltage, power, insertion loss and switch module switching time and other indicators in the switch module.

[0020] Based on the first aspect, in an optional implementation, the M series structures include a first series structure, and a first electrical connection point is connected between any two adjacent sub-modules included in the first series structure, and the first electrical connection point is used to apply a first forward bias voltage or a first reverse bias voltage to the first series structure, and the first forward bias voltage is used to turn on each diode included in the first series structure, and the first reverse bias voltage is used to turn off each diode included in the first series structure.

[0021] By using the switch module shown in this aspect, applying a first forward bias voltage to the first electrical connection point can ensure that each diode included in the first series structure is in a conducting state. Applying a first reverse bias voltage to the first electrical connection point can ensure that each diode included in the first series structure is in a cut-off state.

[0022] Based on the first aspect, in an optional implementation, the M series structures also include a second series structure, a second electrical connection point is connected between any two adjacent sub-modules included in the second series structure, one of the first electrical connection points included in the first series structure is connected to one of the second electrical connection points included in the second series structure, and the second electrical connection point is used to apply a second forward bias voltage or a second reverse bias voltage to the second series structure, the second forward bias voltage is used to turn on each diode included in the second series structure, and the second reverse bias voltage is used to turn off each diode included in the second series structure.

[0023] With the switch module shown in this aspect, the first electrical connection point and the second electrical connection point are connected in series, and the first forward bias voltage and the second forward bias voltage can be applied to the first series structure and the second series structure respectively, so that each diode included in the first series structure and the second series structure is in a conducting state. Similarly, the first electrical connection point and the second electrical connection point can apply the first reverse bias voltage and the second reverse bias voltage to the first series structure and the second series structure respectively, so that each diode included in the first series structure and the second series structure is in a turned-off state.

[0024] Based on the first aspect, in an optional implementation, the switch module includes a switch core, an input end of the switch core is connected to the circuit input end, and an output end of the switch core is connected to the circuit output end.

[0025] By using the switch module shown in the present aspect, each diode included in the switch core is in a conducting state, and the radio frequency signal input to the circuit input end can be transmitted to the circuit output end.

[0026] Based on the first aspect, in an optional implementation, the circuit input end specifically includes a first circuit input end and a second circuit input end, the switch module includes a first switch die, a second switch die, a third switch die and a fourth switch die, the input end of the first switch die and the input end of the second switch die are connected in parallel to the first circuit input end, the output end of the second switch die is grounded, the output end of the first switch die and the input end of the third switch die are connected in parallel to the circuit output end, the output end of the third switch die and the input end of the fourth switch die are connected in parallel to the second circuit input end, and the output end of the fourth switch die is grounded.

[0027] The switch module shown in this aspect is used, and the switch module is used as a single-pole double-throw switch, the first circuit input end and the second circuit input end are used as double throws, and the circuit output end is used as a single pole. In order to achieve the purpose of circuit conduction between the first circuit input end and the circuit output end, the first switch die and the fourth switch die are turned on, and the second switch die and the third switch die are turned off. In order to achieve the purpose of circuit conduction between the second circuit input end and the circuit output end, the first switch die and the fourth switch die are turned off, and the second switch die and the third switch die are turned off.

[0028] Based on the first aspect, in an optional implementation, the M series structures include a first series structure, the switch module also includes a substrate, the substrate includes a first conductive region, a second conductive region and a third conductive region, the first series structure is connected to the first surface of the second conductive region, the first series structure is connected to the first conductive region through a first electrical path, the first series structure is connected to the third conductive region through a second electrical path, the first conductive region serves as the input end, and the third conductive region serves as the output end. The substrate may be a frame, a circuit board or a ceramic board.

[0029] By using the switch module shown in the present aspect, it is possible to ensure that when each diode included in the first series structure is in a conducting state, the circuit between the input end and the output end is in a conducting state, and when each diode included in the first series structure is in a turned-off state, the circuit between the input end and the output end is in a turned-off state.

[0030] Based on the first aspect, in an optional implementation, the M series structures include a second series structure, the second series structure is connected to the second surface of the second conductive region, the second series structure is connected to the first conductive region through a third electrical path, and the second series structure is connected to the third conductive region through a fourth electrical path.

[0031] By using the switch module shown in the present aspect, the first series structure and the second series structure are located on two surfaces of the second conductive region, thereby improving the integration of the switch module.

[0032] Based on the first aspect, in an optional implementation, the M series structures include a third series structure, and along a direction perpendicular to the first surface of the second conductive region, the first series structure is located between the first surface of the second conductive region and the third series structure, the frame also includes a fourth conductive region and a fifth conductive region, the third series structure is connected to the fourth conductive region through a fifth electrical path, the third series structure is connected to the fifth conductive region through a sixth electrical path, the fourth conductive region serves as the input end, and the fifth conductive region serves as the output end.

[0033] By using the switch module shown in this aspect, when the first series structure is located between the first surface of the second conductive region and the third series structure, the integration of the switch module is improved.

[0034] Based on the first aspect, in an optional implementation, the first series structure is packaged on the same wafer.

[0035] By adopting the switch module shown in the present aspect, when the first series structure is packaged on the same wafer, the overall volume of the first series structure is effectively reduced and the integration of the first series structure is improved.

[0036] In the second aspect, an embodiment of the present application provides a communication device, including a processor, J receiving channels and P transmitting channels, wherein J and P are any integers greater than 1, respectively, and the J receiving channels and the P transmitting channels include at least one switch module as described in any one of the first aspects above, and the processor is connected to the switch module; the processor is used to turn on at least one of the J receiving channels through the switch module, and / or the processor is also used to turn on at least one of the P transmitting channels through the switch module. For a description of the beneficial effects of the communication device using the switch module, please refer to the first aspect, and no further details will be given.

[0037] Based on the second aspect, in an optional implementation, the communication device also includes a baseband processor connected to each of the P transmission channels, each of the P transmission channels includes a transmitter in the RF transceiver, a transmission module in the RF module, and a transmitting antenna in the antenna; if the transmission channel is in an on state, the baseband processor is used to send a first digital signal to the transmission channel, the transmitter is used to convert the first digital signal into a first RF signal, the transmission module is used to process the first RF signal to obtain a processed first RF signal, and the transmitting antenna is used to emit the processed first RF signal.

[0038] Based on the second aspect, in an optional implementation, the communication device also includes a baseband processor connected to each of the J receiving channels, each of the J receiving channels includes a receiver in the RF transceiver, a receiving module in the RF module, and a receiving antenna in the antenna; if the receiving channel is in an on state, the receiving antenna is used to receive a second RF signal, the receiving module is used to process the second RF signal to obtain a processed second RF signal, the receiver is used to convert the processed second RF signal into a second digital signal, and the baseband processor is used to digitally process the second digital signal.

[0039] In a third aspect, an embodiment of the present application provides a communication system, including a first communication device and a second communication device, wherein the first communication device is used to send a first radio frequency signal to the second communication device, or the first communication device is used to receive a second radio frequency signal from the second communication device. For the description of the structure of the first communication device and the second communication device, please refer to the second aspect, and no further details are given. For the description of the beneficial effects of the communication system using the switch module, please refer to the first aspect, and no further details are given. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 It is a structural example of an existing radio frequency switch;

[0041] Figure 2 An example diagram of the structure of an embodiment of a communication system provided by the present application;

[0042] Figure 3 An example diagram of the structure of an embodiment of the communication device provided in this application;

[0043] Figure 4 This is a diagram showing an example structure of the first embodiment of the switch module provided in this application;

[0044] Figure 5 This is a diagram showing an example of the structure of the first embodiment of the switch die provided in the present application;

[0045] Figure 6 To include Figure 5 An example diagram of the structure of the switch module of the switch die shown;

[0046] Figure 7 This is a diagram showing an example structure of a second embodiment of the switch die provided in the present application;

[0047] Figure 8 This is a structural example diagram of a third embodiment of the switch die provided in the present application;

[0048] Fig. 9 This is a diagram showing a second exemplary embodiment of the switch module provided in this application;

[0049] Fig.10 This is a structural example diagram of a fourth embodiment of the switch die provided in the present application;

[0050] Fig.11 This is a structural example diagram of a third embodiment of the switch module provided in this application;

[0051] Fig.12 This is an example diagram of a top view packaging structure of the first switch module provided in the present application;

[0052] Fig.13 for Fig.12 An example diagram of a side view packaging structure of a switch module shown;

[0053] Fig.14 for Fig.12 Another side view packaging structure example diagram of the switch module shown;

[0054] Fig.15 for Fig.12 Another side view packaging structure example diagram of the switch module shown;

[0055] Fig.16 This is an example diagram of a side view packaging structure of the second switch module provided in the present application;

[0056] Fig.17 This is an example diagram of a side view packaging structure of a third switch module provided in the present application;

[0057] Fig.18 This is an example diagram of the side view packaging structure of the fourth switch module provided in the present application. DETAILED DESCRIPTION

[0058] The embodiment of the present application provides a switch module and a communication device, which are used to improve the linearity range and withstand voltage of the switch module while ensuring that the switch module insertion loss and switch module switching time and other indicators are not reduced, and ensure that the switch module can conduct high-linearity and high-power radio frequency signals. Among them, the linearity range of the switch module refers to the linear increase of the output power of the switch module with the input power within the linearity range. The switch module switching time refers to the time required for the switch module to switch different working states. Figure 2 An example structure diagram of an embodiment of a communication system provided in the present application. The communication system 200 shown in this embodiment includes a first communication device 201 and a second communication device 202 connected to the first communication device 201. This embodiment does not limit the number of the first communication device 201 and the second communication device 202. For example, the first communication device 201 can be connected to multiple second communication devices 202. This embodiment does not limit the type of the communication system 200. For example, the communication system 200 can be a wireless local area network (WLAN), or other types of wireless communication systems, such as long term evolution (LTE) system, frequency division duplex (FDD) system, time division duplex (TDD), universal mobile telecommunication system (UMTS), worldwide interoperability for microwave access (WiMAX) communication system, new radio (NR), satellite communication, fifth generation mobile communication technology (5G) and future communication systems.

[0059] The device type of the first communication device 201 may be an access point (AP), and the second communication device 202 may be a station (STA). The first communication device 201 is used to communicate with the second communication device 202 via WLAN, and transmit a signal from the second communication device 202 to the network side, or transmit a signal from the network side to the second communication device 202. The first communication device 201 may be any device with a wireless transceiver function. The first communication device 201 includes but is not limited to: evolved Node B (eNB), radio network controller (RNC), Node B (NB), base station controller (BSC), base transceiver station (BTS), home evolved NodeB (HNB), baseband unit (BBU), access point (AP) in wireless fidelity (WIFI) system, wireless relay node, wireless backhaul node, transmission point (TP) or transmission and reception point (TRP), etc. It can also be a gNB or transmission point (TRP or TP) in a 5G system, one or a group of (including multiple antenna panels) antenna panels of a base station in a 5G system, or it can also be a network node constituting a gNB or a transmission point, such as a baseband unit (BBU) or a distributed unit (DU), etc. The second communication device 202 may be referred to as a user equipment, an access terminal, a subscriber unit, a subscriber station, a mobile station, a mobile station, a remote station, a remote terminal, a mobile device, a user terminal, a terminal, a wireless communication device, a user agent or a user device.The second communication device 202 can also be a cellular phone, a cordless phone, a session initiation protocol (SIP) phone, a wireless local loop (WLL) station, a personal digital assistant (PDA), a handheld device with wireless communication function, a computing device or other processing device connected to a wireless modem, a vehicle-mounted device, a wearable device, a terminal device in a future 5G network, or a terminal device in a future evolved public land mobile communication network (PLMN), etc., and the present application does not limit this.

[0060] Figure 3 This is an example diagram of the structure of an embodiment of a communication device provided in the present application. Taking the first communication device 201 as an example, the first communication device 201 includes a baseband processor 301, a radio frequency transceiver 302, a radio frequency module 303 and an antenna 304 connected in sequence, and the first communication device 201 also includes a processor 305 connected to the baseband processor 301, the radio frequency transceiver 302 and the radio frequency module 303 respectively.

[0061] The first communication device 201 includes P transmission channels and J receiving channels, where P is any integer greater than or equal to 1, and J is any integer greater than or equal to 1. In the J receiving channels, each receiving channel includes a receiver in the RF transceiver 302, a receiving module in the RF module 303, and a receiving antenna in the antenna 304. In the P transmission channels, each transmission channel includes a transmitter in the RF transceiver 303, a transmitting module in the RF module 303, and a transmitting antenna in the antenna 304. The transmission channel includes at least one switch module. The switch module shown in this embodiment is applied to the RF field and is used as an example of a RF switch. Then, in the transmission channel, the switch module can be connected between the transmitter and the transmission module, and / or, connected between the transmission module and the transmission antenna, and the switch module is used to turn on the transmission channel or turn off the transmission channel. The receiving channel includes at least one switch module. In the receiving channel, the switch module can be connected between the receiver and the receiving module, and / or, connected between the receiving module and the receiving antenna, and the switch module is used to turn on or turn off the receiving channel. The processor 305 included in the first communication device 201 shown in this example is used to turn on at least one transmission channel among the P transmission channels, and the processor 305 is also used to turn on at least one reception channel among the J reception channels.

[0062] When the processor 305 turns on the transmission channel, the baseband processor 301 sends a first digital signal to the transmission channel, the transmitter in the RF transceiver 303 is used to convert the first digital signal into a first RF signal, and send the first RF signal to the transmission module in the RF module 303, and the transmission module processes the first RF signal to obtain a processed first RF signal, wherein the transmission module may include a switch, a filter, a power amplifier (PA), a low noise amplifier (LNA), an antenna tuner or a phase shifter and other devices, for example, when the transmission module includes a filter, the processing of the first RF signal by the filter refers to filtering the first RF signal, and for another example, when the transmission module includes a PA, the processing of the first RF signal by the PA refers to amplifying the power of the first RF signal, etc. The transmission module sends the processed first RF signal to the transmission antenna, and the transmission antenna is used to emit the processed first RF signal.

[0063] When the processor 305 turns on the receiving channel, the receiving antenna receives the second RF signal, the receiving module in the RF module 303 processes the second RF signal to obtain the processed second RF signal, and sends the processed second RF signal to the receiver in the RF transceiver 302. For the description of the components included in the receiver and the processing of the second RF signal, please refer to the description of the components included in the transmitter and the processing of the first RF signal, which will not be described in detail. The receiver in the RF transceiver 302 is used to convert the processed second RF signal into a second digital signal, and send the second digital signal to the baseband processor 301, and the baseband processor 301 performs digital processing on the second digital signal.

[0064] This embodiment does not limit the application of the switch module. For example, the switch module can also be applied to the field of power amplifiers, etc. The antenna 304 includes a low-gain antenna and a high-gain antenna, etc. Specifically, the antenna 304 may include one or more antennas, antenna elements and / or antenna arrays. Optionally, the antenna 304 may also include a switch module, and the switch module included in the antenna 304 is used as a phase shifter or as an antenna tuner, etc., which is not specifically limited. In the case where the antenna 304 includes a switch module, the processor 305 is connected to the antenna 304 to turn on or off the switch module included in the antenna 304. The above description of the position of the switch module is an optional example and is not repeated. For example, the switch module can also be connected between the baseband processor 301 and the transmitting channel. For example, the switch module can be connected between the baseband processor 301 and the receiving channel.

[0065] This embodiment does not limit the type of processor 305. For example, processor 305 may be one or more field-programmable gate arrays (FPGA), application-specific integrated circuits (ASIC), system on chip (SoC), central processor unit (CPU), network processor (NP), digital signal processor (DSP), microcontroller unit (MCU), programmable logic device (PLD) or other integrated chips, or any combination of the above chips or processors. For the description of the structure of the second communication device 202, please refer to the description of the structure of the first communication device 201, and no further details will be given.

[0066] Figure 4 This is a diagram showing the structure of the first embodiment of the switch module provided in the present application. The switch module 400 shown in this embodiment includes a circuit input terminal 402 and a circuit output terminal 403, and the switch module 400 also includes K switch dies 401 connected between the circuit input terminal 402 and the circuit output terminal 403, wherein K is any integer greater than or equal to 1, and this embodiment does not limit the specific value of K. Figure 4 Taking K=1 as an example, a switch core 401 is connected between the circuit input terminal 402 and the circuit output terminal 403. If K>1, the K switch cores included in the switch module 400 are connected between the circuit input terminal 402 and the circuit output terminal 403 in series, in parallel, or in series-parallel mode. The K switch cores 401 are used to turn on or off the circuit between the circuit input terminal 402 and the circuit output terminal 403. The optional structure of the switch core 401 shown in this embodiment is described below:

[0067] Figure 5 The switch module shown in this embodiment includes an input terminal 501, an output terminal 502, and M series structures. Figure 4 The circuit shown in FIG. 1 is connected to input terminal 402 and output terminal 502 to Figure 4 The circuit output terminal 403 is connected. The M is any integer greater than 1, Figure 5The example shown takes M=2 as an example, then the switch core 401 includes a first series structure 511 and a second series structure 512. The first series structure 511 includes two first submodules and a second submodule connected in series with each other. The first submodule has a first polarity direction, and the second submodule has a second polarity direction. The first polarity direction shown in this embodiment is opposite to the second polarity direction. In this embodiment, the first submodule includes a first diode 521, and the second submodule includes a second diode 522 as an example. Then, the first polarity direction of the first submodule is the polarity direction of the first diode 521, and the second polarity direction of the second submodule is the polarity direction of the second diode 522. Among them, the polarity direction of the diode refers to the direction from the anode of the diode to the cathode of the diode. Then, the polarity direction of the first diode 521 is Figure 5 The direction of the arrow 541 shown (i.e., the direction of the arrow 541 is from the anode of the first diode 521 to the cathode of the first diode 521). The polarity direction of the second diode 522 is Figure 5The direction of the arrow 542 shown (i.e., the direction of the arrow 542 is from the anode of the second diode 522 to the cathode of the second diode 522). It can be seen from the polarity direction shown by the arrow 541 and the polarity direction shown by the arrow 542 that the polarity direction of the first diode 521 is opposite to the polarity direction of the second diode 522. It can be understood that in the first series structure 511, the input end 501, the anode of the first diode 521, the cathode of the first diode 521, the cathode of the second diode 522, the anode of the second diode 522 and the output end 502 are connected in series in sequence. Similarly, the second series structure 512 includes two first submodules and a second submodule connected in series with each other. For example, the first submodule includes a first diode 531 and the second submodule includes a second diode 532. The first polarity direction of the first submodule included in the second series structure 512 is opposite to the second polarity direction of the second submodule. Specifically, the polarity direction of the first diode 531 is opposite to that of the second diode 532. For specific description, please refer to the description that the polarity direction of the first diode 521 is opposite to that of the second diode 522, and no further description is given. In the second series structure 512, the input end 501, the anode of the first diode 531, the cathode of the first diode 531, the cathode of the second diode 532, the anode of the second diode 532, and the output end 502 are connected in series in sequence. In combination with the first series structure 511 and the second series structure 512, the two ends of the first series structure 511 include a first end diode and a second end diode respectively. When the first series structure 511 only includes the first diode 521 and the second diode 522, the first end diode is the first diode 521, and the second end diode is the second diode 522. Similarly, when the second series structure 512 only includes the first diode 531 and the second diode 532, the first end diodes included at both ends of the second series structure 512 are the first diode 531, and the second end diodes are the second diode 532. The first polarity of the first diode 521 and the first polarity of the first diode 531 are connected in parallel to the input terminal 501. Figure 5 The example shown takes the first polarity as the anode. The second polarity of the second diode 522 and the second polarity of the second diode 532 are connected in parallel to the output terminal 502. Figure 5 The example shown takes the second polarity as the anode as an example, and it can be seen that Figure 5The first polarity and the second polarity shown are the same and are both anodes. The type of each diode included in the switch module shown in this embodiment can be a PIN diode (positive intrinsic negative diode, PIN diode). This embodiment does not limit the type of diode, as long as the diode has unidirectional conductivity. This embodiment does not limit the semiconductor material used to make the diode. For example, the semiconductor material includes but is not limited to silicon (Silicon), gallium nitride (GaN), gallium arsenide (GaAs) or silicon carbide (SiC), etc.

[0068] Figure 6 To include Figure 5 The switch module 600 includes a first capacitor 601, a second capacitor 602, a first inductor 603, a second inductor 604, a third inductor 605 and a switch die 401. For a description of the structure of the switch die 401, see Figure 5 As shown, the details are not repeated here. The first capacitor 601 is connected in series between the circuit input terminal 611 and the input terminal of the switch core 401. The second capacitor 602 is connected in series between the circuit output terminal 612 and the output terminal of the switch core 401. The first series structure includes a first electrical connection point 621, and the second series structure includes a second electrical connection point 622. The first electrical connection point 621 is located between the first diode 521 and the second diode 522, and the second electrical connection point 622 is located between the first diode 531 and the second diode 532. The first electrical connection point 621, the second electrical connection point 622, the second inductor 604 and the first electrical connection terminal 631 are connected in series in sequence. There is a third electrical connection point 623 between the first capacitor 601 and the input terminal of the switch core 401, and the third electrical connection point 623, the first inductor 603 and the second electrical connection terminal 632 are connected in series in sequence. A fourth electrical connection point 624 is provided between the second capacitor 602 and the output end of the switch core 401 , and the fourth electrical connection point 624 , the third inductor 605 and the third electrical connection end 633 are sequentially connected in series.

[0069] In this embodiment, the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633 are respectively connected to the electrical port of the processor as an example. Then, the processor can apply voltage or current to the switch die through the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633 to control the on or off of the switch die 401. In this embodiment, the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633 are connected to the processor as an example. In other examples, the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633 can be connected to any chip included in the communication device. If the switch die 401 needs to be turned on, the processor applies a first forward bias voltage to the first series structure through the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633, and applies a second forward bias voltage to the second series structure. The first forward bias voltage is used to turn on each diode included in the first series structure. The second forward bias voltage is used to turn on each diode included in the second series structure. It can be understood that when the first series structure is applied with a first forward bias voltage and the second series structure is applied with a second forward bias voltage, the four diodes included in the switch core 401, namely the first diode 521, the first diode 531, the second diode 522 and the second diode 531 are all in a conducting state. Then, the RF signal input by the circuit input terminal 611 can be conducted to the circuit output terminal 612. The voltage applied to the switch core 401 by the second electrical connection terminal 632 and the third electrical connection terminal 633 can also control the conduction loss of the switch core 401. This embodiment takes the first electrical connection point 621, the second electrical connection point 622 and the first electrical connection point 631 connected in series as an example. In other examples, the first electrical connection point 621 and the second electrical connection point 622 can also be connected to different electrical ports of the processor respectively, or the first electrical connection point 621 and the second electrical connection point 622 can also be connected to different processors or chips respectively. If the switch core 401 needs to be turned off, the processor applies a first reverse bias voltage to the first series structure through the first electrical connection terminal 631, the second electrical connection terminal 632, and the third electrical connection terminal 633, and applies a second reverse bias voltage to the second series structure, wherein the first reverse bias voltage is used to turn off each diode included in the first series structure, and the second reverse bias voltage is used to turn off each diode included in the second series structure. It can be understood that when the first series structure is applied with the first reverse bias voltage and the second series structure is applied with the second reverse bias voltage, the four diodes included in the switch core 401, namely the first diode 521, the first diode 531, the second diode 522, and the second diode 531 are all in the off state, and then the circuit between the circuit input terminal 611 and the circuit output terminal 612 is in the off state.It should be clear that the description of the electrical connection points included in the switch module and the connection relationship between the connection points in this embodiment is an optional example and is not limited, as long as the different diodes included in the switch core are all in the on state or in the off state.

[0070] Each series structure shown in this embodiment includes an even number of submodules, and the polarity direction of the first end diode of each series structure is opposite to the polarity direction of the second end diode, taking the first polarity connected to the input end and the second polarity connected to the output end as an example to ensure that the first polarity connected to the input end and the second polarity connected to the output end are the same, without limitation. In other examples, each series structure includes multiple submodules, and the number of submodules included is an odd number, the polarity direction of the first end diode of each series structure is the same as the polarity direction of the second end diode, then, the first polarity of the first end diode is connected to the input end, the second polarity of the second end diode is connected to the output end, and the first polarity and the second polarity are opposite.

[0071] By using the switch module shown in this embodiment, it is effectively ensured that all diodes included in the series structure are in the on state or in the off state. When the multiple diodes included in the switch core are all in the on state, the circuit between the circuit input end and the circuit output end of the switch module is in the on state, so as to achieve the purpose of inputting the RF signal from the circuit input end and outputting it from the circuit output end via the switch module. When the multiple diodes included in the switch core are all in the off state, the circuit between the circuit input end and the circuit output end of the switch module is in the off state. The switch module provided in this embodiment can improve the linearity range and withstand voltage of the switch module without increasing the number of diodes or increasing the complexity of the switch module circuit. Moreover, while improving the linearity range and withstand voltage of the switch module, it is ensured that the indicators such as the insertion loss of the switch module and the switching time of the switch module are not reduced, which effectively limits the mutual constraints between the indicators such as the linearity range, withstand voltage, power, insertion loss and switching time of the switch module in the switch module.

[0072] Figure 5 The connection method of the diode shown is an optional example and is not limiting. For example Figure 7 As shown, Figure 7 This is a structural example diagram of the second embodiment of the switch core provided in this application. Figure 7 The switch die is shown relative to Figure 5 The difference between the switch cores shown is that the polarity direction of each diode is different. Specifically, the switch core 700 shown in this embodiment includes an input terminal 701, an output terminal 702 and M series structures. The M is any integer greater than 1, Figure 7The example shown takes M=2 as an example, then the switch die 700 includes a first series structure 711 and a second series structure 712. The first series structure 711 includes two first submodules and a second submodule connected in series. The polarity direction of the diode included in the first submodule is opposite to the polarity direction of the diode included in the second submodule. For an explanation of the polarity direction of the diode, please refer to Figure 5 Corresponding descriptions are not described in detail. For example, the first submodule includes a first diode 721, and the second submodule includes a second diode 722, then the polarity direction of the first diode 721 is opposite to the polarity direction of the second diode 722. It can be understood that in the first series structure 711, the input end 701, the cathode of the first diode 721, the anode of the first diode 721, the anode of the second diode 722, the cathode of the second diode 722, and the output end 702 are connected in series in sequence. Similarly, the second series structure 712 includes two first submodules and a second submodule connected in series with each other. For example, the first submodule includes a first diode 731, and the second submodule includes a second diode 732. The polarity direction of the first diode 731 is opposite to the polarity direction of the second diode 732. For specific descriptions, please refer to the description that the polarity direction of the first diode 721 is opposite to the polarity direction of the second diode 722, and specific descriptions are not repeated. In the second series structure 712, the input end 701, the cathode of the first diode 731, the anode of the first diode 731, the anode of the second diode 732, the cathode of the second diode 732, and the output end 702 are connected in series. In combination with the first series structure 711 and the second series structure 712, the two ends of the first series structure 711 include a first end diode and a second end diode respectively. When the first series structure 711 only includes the first diode 721 and the second diode 722, the first end diode is the first diode 721, and the second end diode is the second diode 722. Similarly, when the second series structure 712 only includes the first diode 731 and the second diode 732, the first end diode is the first diode 731, and the second end diode is the second diode 732. The first polarity of the first diode 721 and the first polarity of the first diode 731 are connected in parallel to the input end 701, Figure 7 The example shown takes the first polarity as the cathode. The second polarity of the second diode 722 and the second polarity of the second diode 732 are connected in parallel to the output terminal 702. Figure 7 The example shown takes the second polarity as the cathode as an example, and it can be seen that Figure 7 The first polarity and the second polarity shown are the same and are both cathodes. Figure 7The first diode 721, the second diode 722, the first diode 731 and the second diode 732 included in the switch die are all in the on state or in the off state. For details, see Figure 6 The corresponding instructions are not elaborated in detail.

[0073] Figure 5 as well as Figure 7 As shown, the switch core includes two series structures, and each series structure includes two diodes connected in series. It should be clear that the number of series structures included in the switch core shown in the embodiment of the present application only needs to be greater than or equal to 2, and the specific number is not limited. Moreover, the number of diodes connected in series in each series structure only needs to be greater than or equal to 2, and the specific number is not limited. The number of series structures included in the switch core and the number of diodes included in each series structure are related to the power, reliability and performance of the switch module. For example, Figure 8 The third embodiment of the switch core provided in this application is shown in the structural example diagram. The switch core 800 shown in this embodiment includes an input terminal 801, an output terminal 802 and M series structures. The M is any integer greater than 1, Figure 8 The example shown takes M=4 as an example, then the switch core 800 includes a first series structure 811, a second series structure 812, a third series structure 813 and a fourth series structure 814. The first series structure 811 includes four submodules connected in series, and each of the four submodules includes a diode, that is, the first series structure 811 includes a diode 821, a diode 822, a diode 823 and a diode 824. The polarity directions of any two adjacent diodes included in the first series structure 811 are opposite. It can be understood that the polarity direction of diode 821 is opposite to the polarity direction of diode 822, the polarity direction of diode 822 is opposite to the polarity direction of diode 823, and the polarity direction of diode 823 is opposite to the polarity direction of diode 824. For a description of the polarity direction of the diode, please refer to Figure 5The corresponding description is not repeated in detail. Specifically, the input terminal 801, the anode of the diode 821, the cathode of the diode 821, the cathode of the diode 822, the anode of the diode 822, the anode of the diode 823, the cathode of the diode 823, the cathode of the diode 824, the anode of the diode 824 and the output terminal 802 are connected in series in sequence. For the description of the second series structure 812, the third series structure 813 and the fourth series structure 814, please refer to the description of the first series structure 811, and the specific description is not repeated. In combination with the first series structure 811, the second series structure 812, the third series structure 813 and the fourth series structure 814, the two ends of the first series structure 811 respectively include a first end diode (i.e., diode 821) and a second end diode (i.e., diode 824). The two ends of the second series structure 812 respectively include a first end diode 825 and a second end diode 828. The two ends of the third series structure 813 respectively include a first end diode 826 and a second end diode 829. The two ends of the fourth series structure 814 respectively include a first end diode 827 and a second end diode 830. The first polarity of the first end diode 821, the first polarity of the first end diode 825, the first polarity of the first end diode 826, and the first polarity of the first end diode 827 are connected in parallel to the input end 801, and the second polarity of the second end diode 824, the second polarity of the second end diode 828, the second polarity of the second end diode 829, and the second polarity of the second end diode 830 are connected in parallel to the output end 802. Figure 8 The example shown takes the first polarity as the anode and the second polarity as the anode as an example. It can be seen that, Figure 8 The first polarity and the second polarity shown are the same and are both anodes.

[0074] In order to achieve the purpose of all diodes included in the switch core being turned on or off, in each series structure shown in this embodiment, an electrical connection point is included between any two adjacent sub-modules. Taking the first series structure 811 as an example, when each sub-module includes a diode, a first electrical connection point 841 is connected between the diode 821 and the diode 822, between the diode 822 and the diode 823, and between the diode 823 and the diode 824. A second electrical connection point 842 is connected between the input terminal 801 and the diode 821, and a third electrical connection point 843 is connected between the anode of the diode 824 and the output terminal 802. Among them, the first electrical connection point 841, the second electrical connection point 842 and the third electrical connection point 843 are used to apply a forward bias voltage or a reverse bias voltage to the first series structure 811. For specific instructions, please refer to Figure 6The corresponding description is not repeated in detail. It can be understood that when the first electrical connection point 841, the second electrical connection point 842 and the third electrical connection point 843 apply a forward bias voltage to the first series structure 811, the four diodes included in the first series structure 811 are all in a conducting state. For the description that all diodes included in the second series structure 812, the third series structure 813 and the fourth series structure 814 are in a conducting state, please refer to the description of the first series structure 811. It can be seen that all diodes included in the switch core shown in this embodiment can be in a conducting state. When the first electrical connection point 841, the second electrical connection point 842 and the third electrical connection point 843 apply a reverse bias voltage to the first series structure 811, the four diodes included in the first series structure 811 are all in a turned-off state. For the description that all diodes included in the second series structure 812, the third series structure 813 and the fourth series structure 814 are in a turned-off state, please refer to the description of the first series structure 811. All diodes included in the switch core shown in this embodiment are in a turned-off state. It should be noted that the description of the position of the electrical connection point included in the first series structure 811 in this embodiment is an optional example, as long as each diode included in the switch die is applied with a forward bias voltage or a reverse bias voltage.

[0075] The positions of the input terminal 801 and the output terminal 802 shown in this embodiment are interchangeable. It should be noted that this embodiment takes the switch core including four series structures as an example, and in other examples, the switch core may include any number of more than one series structures. This embodiment takes each series structure including four diodes as an example, and in other examples, each series structure may include any number of more than two diodes.

[0076] The above embodiment takes a switch module including a switch die as an example. It should be clear that the embodiment of the present application does not limit the number of switch dies included in the switch module. For example Fig. 9 The switch module shown in this embodiment includes a circuit input terminal 904, a first circuit output terminal 905, and a second circuit output terminal 906. The switch module shown in this embodiment includes a first switch die and a second switch die, wherein the first switch die and the second switch die each include M series structures, where M is any integer greater than 1. Fig. 9The example shown takes M=2 as an example. It should be clear that the present embodiment does not limit the value of M. The first switch die includes a first series structure 911 and a second series structure 912. The second switch die includes a first series structure 913 and a second series structure 914. The first series structure 911 includes two submodules connected in series, each of which includes a diode, that is, the first series structure 911 includes a diode 921 and a diode 922. For a description of the structure of the first series structure 911, please refer to Figure 5 The corresponding first series structure 511 is described in detail without further elaboration. It should be noted that the first series structure 911 shown in this embodiment can also be referred to in Figure 7 or Figure 8 The structure shown is not specifically limited. By analogy, the second series structure 912 includes a diode 931 and a diode 932. The first series structure 913 of the second switch core includes a diode 941 and a diode 942, and the second series structure 914 includes a diode 951 and a diode 952. For the description of the second series structure 912, the first series structure 913 and the second series structure 914, please refer to the description of the first series structure 911, and no further details will be given. Fig. 9 In the embodiment shown, the first switch die and the second switch die share the same input terminal, that is, diodes 921, 931, 941, and 951 are connected in parallel to the input terminal 901. Diodes 922 and 932 are connected in parallel to the first output terminal 902, and the first output terminal 902 of the first switch die is connected to the first circuit output terminal 905. Diodes 942 and 952 are connected in parallel to the second output terminal 903, and the second output terminal 903 of the second switch die is connected to the second circuit output terminal 906. All diodes included in the first switch die shown in this embodiment are in the on state or in the off state, and similarly, all diodes included in the second switch die are in the on state or in the off state. When all diodes included in the first switch die are in the on state, and all diodes included in the second switch die are in the off state, the circuit between the circuit input terminal 904 and the first circuit output terminal 905 is in the on state, and the circuit between the circuit input terminal 904 and the second circuit output terminal 906 is in the off state. When all diodes included in the first switch die are in the off state, and all diodes included in the second switch die are in the on state, the circuit between the circuit input terminal 904 and the first circuit output terminal 905 is in the off state, and the circuit between the circuit input terminal 904 and the second circuit output terminal 906 is in the on state. For instructions on whether the first switch die and the second switch die are respectively on or off, see Figure 6 The corresponding instructions are not elaborated in detail.

[0077] This embodiment takes the example that the switch module includes one circuit input terminal and two circuit output terminals. In other examples, the switch module may include any number of circuit input terminals and any number of circuit output terminals. This embodiment does not limit the number of circuit input terminals and circuit output terminals included in the switch module. The positions of the circuit input terminal and the circuit output terminal shown in this embodiment are interchangeable, the positions of the input terminal and the output terminal of the first switch die are interchangeable, and the positions of the input terminal and the output terminal of the second switch die are also interchangeable. It should be clarified that this embodiment takes the example that the switch module includes two switch dies. In other examples, the switch module may include any number of more than two switch dies. The number of switch dies included in the switch module is not specifically limited. This embodiment takes the example that each series structure includes two diodes. In other examples, each series structure may include any number of more than two diodes.

[0078] In the above embodiment, taking the example that each submodule in each switch die includes a diode, Fig.10 In the illustrated embodiment, each submodule may include a plurality of diodes, wherein: Fig.10 This is a diagram showing the structure of the fourth embodiment of the switch core provided in the present application. The switch core 1000 shown in this embodiment includes an input terminal 1001, an output terminal 1002, and M series structures. M is any integer greater than 1. Fig.10 The example shown takes M=4 as an example, then the switch core 1000 includes a first series structure, a second series structure, a third series structure and a fourth series structure. For an explanation of the first series structure, the second series structure, the third series structure and the fourth series structure connected between the input terminal 1001 and the output terminal 1002, see Figure 8 The corresponding description is not repeated in detail. Taking the first series structure as an example, the first series structure includes a first submodule 1011 and a second submodule 1012. The first submodule 1011 includes two diodes 1021 and a diode 1022 connected in series. The polarity directions of the multiple diodes in the same first submodule are the same. It can be seen that the polarity direction of the diode 1021 is the same as the polarity direction of the diode 1022. For the description of the polarity direction of the diode, please refer to Figure 5The corresponding description is not repeated in detail. The polarity directions of the multiple diodes located in the same second submodule are the same. It can be seen that the polarity direction of the diode 1023 is the same as the polarity direction of the diode 1024. It can be understood that in the first series structure, the input terminal 1001, the anode of the diode 1021, the cathode of the diode 1021, the anode of the diode 1022, the cathode of the diode 1022, the cathode of the diode 1023, the anode of the diode 1023, the cathode of the diode 1024, the anode of the diode 1024 and the output terminal 1002 are connected in series in sequence. For the description of the second series structure, the third series structure and the fourth series structure, please refer to the description of the first series structure, and the details are not repeated. It can be understood that the first polarity of the first end diode included in the four series structures is connected in parallel to the input terminal 1001, and the second polarity of the second end diode included in the four series structures is connected in parallel to the output terminal 1002. This embodiment takes the first polarity and the second polarity as the same and both are anodes as an example. For the description of the first end diode and the second end diode, please refer to Figure 8 The corresponding instructions are not elaborated in detail.

[0079] In this embodiment, each series structure includes two submodules as an example, and there is no limitation thereto, as long as each series structure includes two or more submodules of any number. In this embodiment, each submodule includes two diodes as an example, and in other examples, each submodule may include two or more diodes of any number, as long as the polarity directions of different diodes in the same submodule are the same.

[0080] In order to achieve the purpose of all diodes included in the switch core being turned on or off, taking the first series structure as an example, the third electrical connection point 1041 is connected between the first submodule 1011 and the input end 1001, the first electrical connection point 1042 is connected between the first submodule 1011 and the second submodule 1012, and the fourth electrical connection point 1043 is connected between the second submodule 1012 and the output end 1002. For the description of the electrical connection points, please refer to Figure 6The corresponding description is not repeated in detail. The first electrical connection point 1042, the third electrical connection point 1041 and the fourth electrical connection point 1043 apply a forward bias voltage to each diode included in the first submodule 1011 and the second submodule 1012, so that the four diodes included in the first series structure are all in a conducting state. For the description that all diodes included in the second series structure, the third series structure and the fourth series structure are in a conducting state, please refer to the description of the first series structure. It can be seen that all diodes included in the switch core shown in this embodiment can be in a conducting state. The first electrical connection point 1042, the third electrical connection point 1041 and the fourth electrical connection point 1043 apply a reverse bias voltage to the first submodule 1011, so that the four diodes included in the first series structure are all in a turned-off state. For the description that all diodes included in the second series structure, the third series structure and the fourth series structure are in a turned-off state, please refer to the description of the first series structure. It can be seen that all diodes included in the switch core shown in this embodiment are in a turned-off state. Optionally, the description of the position of the electrical connection point included in the series structure in this embodiment is an optional example. For example, the electrical connection point can also be connected between two adjacent diodes in the same submodule. There is no specific limitation. As long as all the diodes included in the switch die are in the on state, a forward bias voltage can be applied to each diode included in the switch die. If all the diodes included in the switch die are in the off state, a reverse bias voltage can be applied to each diode included in the switch die.

[0081] This embodiment does not limit the number of switch dies included in the switch module. For example Fig.11 As shown, Fig.11 This is a structural example diagram of the third embodiment of the switch module provided in this application. The switch module shown in this embodiment includes a first circuit input terminal 1101, a second circuit input terminal 1102, and a circuit output terminal 1103. The switch module includes a first switch die 1111, a second switch die 1112, a third switch die 1113, and a fourth switch die 1114. For a detailed description of the structure of the first switch die 1111 in this embodiment, please refer to Figure 5 As shown, the specific details are not repeated. It should be clear that the structure of the first switch die 1111 shown in this embodiment can also be referred to Figure 7 , Figure 8 , Fig. 9 or Fig.10As shown, the details are not repeated here. For the description of the structures of the second switch die 1112, the third switch die 1113 and the fourth switch die 1114, please refer to the description of the structure of the first switch die 1111, and the details are not repeated here. The input end of the first switch die 1111 and the input end of the second switch die 1112 are connected in parallel to the first circuit input end 1101, the output end of the second switch die 1112 is grounded, the output end of the first switch die 1111 and the input end of the third switch die 1113 are connected in parallel to the circuit output end 1103, the output end of the third switch die 1113 and the input end of the fourth switch die 1114 are connected in parallel to the second circuit input end 1102, and the output end of the fourth switch die 1114 is grounded.

[0082] In this embodiment, the switch module can be used as a single-pole double-throw switch, wherein the first circuit input terminal 1101 and the second circuit input terminal 1102 are double-throw, and the circuit output terminal 1103 is a single-pole. In order to achieve the purpose of circuit conduction between the first circuit input terminal 1101 and the circuit output terminal 1103, a forward bias voltage is applied to each diode included in the first switch die 1111 to turn on the first switch die 1111. A reverse bias voltage is applied to each diode included in the second switch die 1112 to turn off the second switch die 1112. A reverse bias voltage is applied to each diode included in the third switch die 1113 to turn off the third switch die 1113. A forward bias voltage is applied to each diode included in the fourth switch die 1114 to turn on the fourth switch die 1114. It can be understood that when the first switch die 1111 and the fourth switch die 1114 are in the on state, and when the second switch die 1112 and the third switch die 1113 are in the off state, the circuit between the first circuit input terminal 1101 and the circuit output terminal 1103 included in the switch module is connected. Similarly, in order to achieve the purpose of circuit conduction between the second circuit input terminal 1102 and the circuit output terminal 1103, a reverse bias voltage is applied to each diode included in the first switch die 1111 to turn off the first switch die 1111. A forward bias voltage is applied to each diode included in the second switch die 1112 to turn on the second switch die 1112. A forward bias voltage is applied to each diode included in the third switch die 1113 to turn on the third switch die 1113. A reverse bias voltage is applied to each diode included in the fourth switch die 1114 to turn off the fourth switch die 1114. It can be understood that when the first switch die 1111 and the fourth switch die 1114 are in the off state, and the second switch die 1112 and the third switch die 1113 are in the on state, the circuit between the second circuit input terminal 1102 and the circuit output terminal 1103 included in the switch module is connected. For the description of whether the different diodes included in each switch die shown in this embodiment are all in the on state or all in the off state, please refer to Figure 6 The corresponding instructions are not elaborated in detail.

[0083] It should be clear that the positions of the circuit input terminal and the circuit output terminal shown in this embodiment are interchangeable. This embodiment does not limit the number of switch dies connected between the circuit input terminal and the circuit output terminal included in the switch module, and the connection method between multiple switch dies. This embodiment takes the same structure of different switch dies included in the switch module as an example. In other examples, the structures of different switch dies may also be different from each other.

[0084] The packaging structure of the switch module provided in the embodiment of the present application is described below. Fig.12This is an example diagram of a top view packaging structure of the first switch module provided in this application. Fig.13 for Fig.12 A side view of the packaging structure of the switch module shown in the embodiment. The switch module shown in this embodiment includes a substrate. The substrate is used as a frame in this embodiment. The frame shown in this embodiment is made of a conductive material. For example, the frame is made of metal copper (CU) or a copper alloy. Specifically, the frame includes a first conductive region 1201, a second conductive region 1202, and a third conductive region 1203. Any two adjacent conductive regions among the first conductive region 1201, the second conductive region 1202, and the third conductive region 1203 are isolated from each other. The switch module includes a first series structure 1211. For a description of the structure of the first series structure 1211, please refer to Figure 4 , Figure 5 , Figure 7 , Figure 8 or Fig.10 As shown, the details are not repeated. Each diode included in the first series structure 1211 is bonded to the first surface of the second conductive region 1202, so as to realize the series connection between the two adjacent diodes included in the first series structure 1211 through the second conductive region 1202. For example, the first series structure 1211 includes a diode 1221 and a diode 1222. The diode 1221 is connected in series with the diode 1222 through the second conductive region 1202. Specifically, the diode 1221 and the diode 1222 are respectively bonded to the first surface of the second conductive region 1202 by conductive glue or the like. The first series structure 1211 is electrically connected to the first conductive region 1201 through a first electrical path 1231, and the first conductive region serves as the input end 1201 of the switch die. The first electrical path 1231 shown in this embodiment can be a medium capable of signal transmission, such as a wire, a cable or a circuit board. The first series structure 1211 is electrically connected to the third conductive region 1203 through a second electrical path 1232, and the third conductive region 1203 serves as the output end of the switch die. For a description of the input and output terminals of the switch die, see Figure 4 , Figure 5 , Figure 7 , Figure 8 or Fig.10 Optionally, the switch die as a whole shown in this embodiment can be sealed in an air-sealed package or sealed by a high thermal conductivity dielectric material 1240, and the dielectric material 1240 includes but is not limited to silicon nitride or diamond.

[0085] Fig.14 for Fig.12 Another side view packaging structure example of the switch module is shown. Fig.14In the example shown, the diode 1221 and the diode 1222 included in the first series structure 1211 are packaged as a whole through monolithic integration. Fig.14 As shown, the diode 1221 and the diode 1222 included in the first series structure 1211 are connected by semiconductor interconnect materials. It can be understood that in the manufacturing stage, the diode 1221 and the diode 1222 included in the first series structure 1211 can be packaged on the same wafer to make a first series structure as a whole, which effectively reduces the overall volume of the first series structure and improves the integration of the first series structure. The M series structures included in the switch die shown in this embodiment can be packaged on the same wafer to serve as M series structures as a whole.

[0086] Fig.15 for Fig.12 Another side view of the packaging structure of the switch module is shown in FIG. Fig.13 as well as Fig.14 In the example shown, the switch die includes a first series structure 1211 connected to a first surface of a second conductive region 1202 of the frame, and Fig.15 In the illustrated embodiment, the switch die further includes a second series structure 1212, which is connected to the second surface of the second conductive region 1202 of the frame, and the first surface and the second surface are two surfaces of the second conductive region 1202 of the frame that are located opposite to each other. For a description of the structure of the second series structure 1212, see Figure 4 , Figure 5 , Figure 7 , Figure 8 or Fig.10 As shown, the details are not repeated here. The second series structure 1211 is electrically connected to the first conductive area 1201 through the third electrical path 1501, and the second series structure 1211 is electrically connected to the third conductive area 1203 through the fourth electrical path 1502. For the description of the third electrical path 1501 and the fourth electrical path 1502, please refer to the description of the first electrical path 1231, and the details are not repeated here. This embodiment does not limit the number of second series structures connected to the second surface of the second conductive area 1202. The second series structure connected to the second surface of the second conductive area 1202 can also be used as shown in FIG. Fig.14 The structure shown is interconnected by semiconductor interconnect materials. For details, see Fig.14 The corresponding instructions are not elaborated in detail.

[0087] Figures 12 to 15 The example shown is that the first surface of the second conductive region of the frame is connected to a layer of series structure. Fig.16 In the illustrated embodiment, the first surface of the second conductive region of the frame can be connected to a multi-layer series structure. Fig.16 This is a side view of the packaging structure of the second switch module provided in this application. The switch module shown in this embodiment includes a frame, and the frame shown in this embodiment is made of conductive material. For details, please refer to Fig.12 The corresponding description is not repeated in detail. The frame includes a first conductive region 1601, a second conductive region 1602, a third conductive region 1603, a fourth conductive region 1604, and a fifth conductive region 1605. Any two adjacent conductive regions among the first conductive region 1601, the second conductive region 1602, the third conductive region 1603, the fourth conductive region 1604, and the fifth conductive region 1605 are isolated from each other. The switch module includes a first series structure 1611. For a description of the structure of the first series structure 1611, see Figure 4 , Figure 5 , Figure 7 , Figure 8 or Fig.10 Each diode included in the first series structure 1611 is bonded to the first surface of the second conductive region 1602, so that the series connection between two adjacent diodes included in the first series structure 1611 is realized through the second conductive region 1602. For the description of the first series structure 1611 connected to the first surface of the second conductive region 1602, see Fig.12 The corresponding description is not repeated in detail. The first series structure 1611 is electrically connected to the first conductive region 1601 through the first electrical path 1631, and the first conductive region 1601 serves as the input end of the switch die. The first series structure 1611 is electrically connected to the third conductive region 1603 through the second electrical path 1632, and the third conductive region 1603 serves as the output end of the switch die. For the description of the first electrical path 1631 and the second electrical path 1632, please refer to Fig.12 The corresponding description is not repeated in detail. The switch die shown in this embodiment also includes a third series structure 1612, and the first series structure 1611 is connected between the third series structure 1612 and the first surface of the second conductive region 1602. It can be understood that the third series structure 1612 is connected to the surface of the first series structure 1611 facing away from the first surface of the second conductive region 1602. For the description of the third series structure 1612, please refer to Figure 4 , Figure 5 , Figure 7 , Figure 8 or Fig.10As shown, the details are not repeated. Any two adjacent diodes included in the third series structure 1611 are connected in series through an electrical path 1613. The third series structure 1612 is electrically connected to the fourth conductive region 1604 through a fourth electrical path 1621, and the third series structure 1612 is electrically connected to the fifth conductive region 1605 through a fifth electrical path 1622. For a description of the electrical path 1613, the fourth electrical path 1621, and the fifth electrical path 1622, see Fig.12 The corresponding first electrical path 1231 is not described in detail. Optionally, the switch die as a whole shown in this embodiment can be sealed in an air-sealed packaging form or sealed by a high thermal conductivity medium material. For details, see Fig.12 The first series structure 1613 and the third series structure 1612 shown in this embodiment can be packaged as a whole by monolithic integration. For details, see Fig.14 Optionally, the second surface of the second conductive region 1602 shown in this embodiment can be packaged with a second series structure. For packaging instructions, see Fig.15 The corresponding instructions are not elaborated in detail.

[0088] Figures 12 to 16 In the illustrated embodiment, different diodes in the same series structure are packaged on the same surface of the second conductive region as an example. For example, all diodes included in the first series structure are packaged on the first surface of the second conductive region. For another example, all diodes included in the second series structure are packaged on the second surface of the second conductive region. Fig.17 In the switch die shown, the same series structure can be packaged on different surfaces of the second conductive region, wherein Fig.17 This is a side view of the packaging structure of the third switch module provided in this application. The switch module shown in this embodiment includes a frame, and the frame shown in this embodiment is made of conductive material. For details, please refer to Fig.12 The corresponding description is not repeated in detail. The frame includes a first conductive region 1701, a second conductive region 1702, and a third conductive region 1703. Any two adjacent conductive regions among the first conductive region 1701, the second conductive region 1702, and the third conductive region 1703 are isolated from each other. The switch module includes a first series structure 1711. For a description of the structure of the first series structure 1711, see Figure 4 , Figure 5 , Figure 7 , Figure 8 or Fig.10The first series structure 1711 includes a diode 1721 and a diode 1722. The diode 1721 is connected to the first surface of the second conductive region 1702, and the diode 1722 is connected to the second surface of the second conductive region 1702. For the description of the first surface and the second surface of the second conductive region 1702, see Fig.15 The corresponding description is not repeated in detail. The diode 1721 and the diode 1722 are connected in series through the second conductive region 1702. The first series structure 1711 is electrically connected to the first conductive region 1701 through the first electrical path 1731, and the first conductive region 1701 serves as the input end of the switch die. The first series structure 1711 is electrically connected to the third conductive region 1703 through the second electrical path 1732, and the third conductive region 1703 serves as the output end of the switch die. For the description of the first electrical path 1731 and the second electrical path 1732, please refer to Fig.12 The switch die shown in this embodiment also includes a second series structure 1712. For the description of the second series structure 1712, please refer to Figure 4 , Figure 5 , Figure 7 , Figure 8 or Fig.10 The second series structure 1712 includes a diode 1723 and a diode 1724. The diode 1723 is connected to the first surface of the second conductive region 1702, and the diode 1724 is connected to the second surface of the second conductive region 1702. For the description of the first surface and the second surface of the second conductive region 1702, see Fig.15 The corresponding description is not repeated in detail. The diode 1723 and the diode 1724 are connected in series through the second conductive region 1702. The second series structure 1712 is electrically connected to the first conductive region 1701 through the third electrical path 1733, and the first conductive region 1701 serves as the input end of the switch die. The second series structure 1712 is electrically connected to the third conductive region 1703 through the fourth electrical path 1734, and the third conductive region 1703 serves as the output end of the switch die. For the description of the third electrical path 1733 and the fourth electrical path 1734, please refer to Fig.12 The corresponding instructions are not elaborated in detail.

[0089] Fig.18This is an example diagram of a side view packaging structure of the fourth switch module provided in the present application. The switch module shown in this embodiment includes a substrate. This embodiment takes the substrate as a circuit board or a ceramic board as an example. This embodiment does not limit the type of circuit board. For example, the circuit board is a printed circuit board (PCB). The circuit board includes a first conductive area 1801, a second conductive area 1802, and a third conductive area 1803. Any two adjacent conductive areas among the first conductive area 1801, the second conductive area 1802, and the third conductive area 1803 are isolated from each other. The switch module includes a first series structure 1811. For a description of the structure of the first series structure 1811, please refer to Figure 4 , Figure 5 , Figure 7 , Figure 8 or Fig.10 As shown, the details are not repeated here. Each diode included in the first series structure 1211 is electrically connected to the first surface of the second conductive region 1202, and the multiple diodes included in the first series structure 1211 are electrically connected through conductive traces in the circuit board. The first series structure 1811 is electrically connected to the first conductive region 1801 through a first electrical path 1831. The first conductive region 1801 serves as the input end of the switch core. The first electrical path 1831 shown in this embodiment can be a medium that can realize signal transmission, such as a wire, a cable or a circuit board. The first series structure 1811 is electrically connected to the third conductive region 1803 through a second electrical path 1832. The third conductive region 1803 serves as the output end of the switch core. For a description of the input and output ends of the switch core, please refer to Figure 4 , Figure 5 , Figure 7 , Figure 8 or Fig.10 The grounding electrode 1841 of the first series structure 1811 is electrically connected to the corresponding contact electrode 1842 on the circuit board, and the contact electrode 1842 on the circuit board is electrically connected to the ground plane 1843 through the conductive through hole 1844 in the circuit board.

[0090] The second surface of the circuit board shown in this embodiment can also be connected to a second series structure. For details, see Fig.15 The first series structure shown in this embodiment faces away from the surface of the circuit board, and can also be connected to a third series structure. For details, see Fig.16 The first series structure shown in this embodiment includes a plurality of diodes connected by semiconductor interconnection materials. For details, see Fig.14The corresponding description is not repeated here. A part of the diodes included in the first series structure shown in this embodiment can be connected to the first surface of the circuit board, and another part of the diodes included in the first series structure can be connected to the second surface of the circuit board. For specific description, please refer to Fig.17 The corresponding instructions are not elaborated in detail.

[0091] The present application also provides a communication device. For a description of the communication device, see Figure 3 The corresponding instructions are not elaborated in detail.

[0092] The present application also provides a communication system. For a description of the communication system, see Figure 2 The corresponding instructions are not elaborated in detail.

[0093] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A switch module, characterized in that: The circuit comprises a circuit input terminal, a circuit output terminal and at least one switch die, wherein the at least one switch die is connected between the circuit input terminal and the circuit output terminal, and the at least one switch die is used to turn on or off the circuit between the circuit input terminal and the circuit output terminal; The switch core includes an input end, an output end and M series structures, where M is any integer greater than 1, the M series structures are connected in parallel to the input end, and the M series structures are connected in parallel to the output end, each of the M series structures includes a plurality of sub-modules connected in series with each other, each of the sub-modules includes a diode or a plurality of diodes connected in series with each other, the plurality of sub-modules connected in series with each other include a first sub-module and a second adjacent sub-module, the first sub-module has a first polarity direction, the second sub-module has a second polarity direction, and the first polarity direction is opposite to the second polarity direction.

2. The switch module according to claim 1, characterized in that: The first submodule includes a first diode, the first polarity direction is the polarity direction of the first diode, and the direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode.

3. The switch module according to claim 1, characterized in that: The first submodule includes a plurality of first diodes connected in series. Among the plurality of first diodes connected in series, any two different first diodes have the same polarity direction. The first polarity direction is the polarity direction of each first diode. The direction from the anode of the first diode to the cathode of the first diode is the polarity direction of the first diode.

4. The switch module according to any one of claims 1 to 3, characterized in that: Both ends of each of the series structures include a first end diode and a second end diode, respectively, the first polarities of the M first end diodes included in the M series structures are connected in parallel to the input end, and the second polarities of the M second end diodes included in the M series structures are connected in parallel to the output end; If the series structure includes an even number of the submodules, the first polarity is the same as the second polarity; or, if the series structure includes an odd number of the submodules, the first polarity is opposite to the second polarity.

5. The switch module according to claim 1 or 2, characterized in that: The first submodule includes a first diode, the second submodule includes a second diode, the anode of the first diode is connected in series with the input end, the cathode of the first diode is connected in series with the cathode of the second diode, and the anode of the second diode is connected in series with the output end.

6. The switch module according to claim 1 or 2, characterized in that: The first submodule includes a first diode, the second submodule includes a second diode, the cathode of the first diode is connected in series with the input end, the anode of the first diode is connected in series with the anode of the second diode, and the cathode of the second diode is connected in series with the output end.

7. The switch module according to any one of claims 1 to 6, characterized in that: The M series structures include a first series structure, wherein a first electrical connection point is connected between any two adjacent submodules included in the first series structure, and the first electrical connection point is used to apply a first forward bias voltage or a first reverse bias voltage to the first series structure, and the first forward bias voltage is used to turn on each diode included in the first series structure, and the first reverse bias voltage is used to turn off each diode included in the first series structure.

8. The switch module according to claim 7, characterized in that: The M series structures also include a second series structure, a second electrical connection point is connected between any two adjacent sub-modules included in the second series structure, one of the first electrical connection points included in the first series structure is connected to one of the second electrical connection points included in the second series structure, the second electrical connection point is used to apply a second forward bias voltage or a second reverse bias voltage to the second series structure, the second forward bias voltage is used to turn on each diode included in the second series structure, and the second reverse bias voltage is used to turn off each diode included in the second series structure.

9. The switch module according to any one of claims 1 to 8, characterized in that: The switch module includes a switch core, the input end of the switch core is connected to the circuit input end, and the output end of the switch core is connected to the circuit output end.

10. The switch module according to any one of claims 1 to 8, characterized in that: The circuit input end specifically includes a first circuit input end and a second circuit input end, and the switch module includes a first switch die, a second switch die, a third switch die and a fourth switch die. The input end of the first switch die and the input end of the second switch die are connected in parallel to the first circuit input end, the output end of the second switch die is grounded, the output end of the first switch die and the input end of the third switch die are connected in parallel to the circuit output end, the output end of the third switch die and the input end of the fourth switch die are connected in parallel to the second circuit input end, and the output end of the fourth switch die is grounded.

11. The switch module according to any one of claims 1 to 10, characterized in that: The M series structures include a first series structure, the switch module also includes a substrate, the substrate includes a first conductive region, a second conductive region and a third conductive region, the first series structure is connected to a first surface of the second conductive region, the first series structure is connected to the first conductive region through a first electrical path, the first series structure is connected to the third conductive region through a second electrical path, the first conductive region serves as the input end, and the third conductive region serves as the output end.

12. The switch module according to claim 11, characterized in that: The M series structures include a second series structure, which is connected to the second surface of the second conductive region, connected to the first conductive region via a third electrical path, and connected to the third conductive region via a fourth electrical path.

13. The switch module according to claim 11, characterized in that: The M series structures include a third series structure, and along a direction perpendicular to the first surface of the second conductive region, the first series structure is located between the first surface of the second conductive region and the third series structure. The frame also includes a fourth conductive region and a fifth conductive region. The third series structure is connected to the fourth conductive region through a fifth electrical path, and the third series structure is connected to the fifth conductive region through a sixth electrical path. The fourth conductive region serves as the input end, and the fifth conductive region serves as the output end.

14. The switch module according to any one of claims 11 to 13, characterized in that: The first series structure is packaged on the same wafer.

15. A communication device, characterized in that: comprising a processor, J receiving channels and P transmitting channels, wherein J and P are any integers greater than 1, respectively, the J receiving channels and the P transmitting channels comprise at least one switch module according to any one of claims 1 to 14, and the processor is connected to the switch module; The processor is used to conduct at least one receiving channel among the J receiving channels through the switch module, and / or the processor is also used to conduct at least one transmitting channel among the P transmitting channels through the switch module.

16. The communication device according to claim 15, characterized in that The communication device also includes a baseband processor connected to each of the P transmission channels, each of the P transmission channels including a transmitter in the radio frequency transceiver, a transmission module in the radio frequency module, and a transmission antenna in the antenna; If the transmitting channel is in the on state, the baseband processor is used to send a first digital signal to the transmitting channel, the transmitter is used to convert the first digital signal into a first radio frequency signal, the transmitting module is used to process the first radio frequency signal to obtain a processed first radio frequency signal, and the transmitting antenna is used to emit the processed first radio frequency signal.

17. The communication device according to claim 15 or 16, characterized in that: The communication device also includes a baseband processor connected to each of the J receiving channels, each of the J receiving channels including a receiver in the radio frequency transceiver, a receiving module in the radio frequency module, and a receiving antenna in the antenna; If the receiving channel is in the on state, the receiving antenna is used to receive a second RF signal, the receiving module is used to process the second RF signal to obtain a processed second RF signal, the receiver is used to convert the processed second RF signal into a second digital signal, and the baseband processor is used to digitally process the second digital signal.

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