A power converter, an embedded integrated device unit, a high-heat-dissipation high-frequency power module and a manufacturing method thereof

Abstract

The application discloses a high-heat-dissipation high-frequency power module and a manufacturing method thereof. The high-heat-dissipation high-frequency power module comprises an embedded circuit board, at least one high-frequency capacitor and insulating heat-conducting material, and power electrodes of at least two semiconductor power devices are connected in series to form at least one power conversion bridge arm. The area ratio of the power electrode wiring of the semiconductor power device projected on the surface of the embedded circuit board to the area of the semiconductor power device is more than 60%. The power conversion bridge arm is connected in parallel with the high-frequency capacitor to realize low-loop inductance interconnection. The application can realize high-frequency and large-current characteristics, has single-face high-heat-dissipation capacity and nearly ideal double-face high-heat-dissipation capacity. Due to excellent loop processing, the loop inductance of the bridge arm formed by two semiconductor power devices per 10 square millimeters is less than 2nH or even less than 1nH, which is suitable for MHz frequency requirement and is much higher than the current mainstream frequency of less than 100KHz.

Description

[0001] This application is a divisional application of the patent application with application number 2023105550384, application date May 16, 2023, and patent title "A power converter, an embedded integrated device unit, a high heat dissipation high frequency power module and a method for manufacturing the same". Technical Field

[0002] This invention belongs to the field of semiconductor technology, and particularly relates to a power converter, an embedded integrated device unit, a high heat dissipation high-frequency power module, and a method for manufacturing the same. Background Technology

[0003] In the field of power conversion, contributions to energy conservation and emission reduction come from two aspects: high efficiency to reduce direct energy consumption, and high power density to reduce material usage and thus reduce indirect energy consumption. High power density requires high frequency, but high frequency and high efficiency are often contradictory. Therefore, to achieve high efficiency at high frequencies, it is necessary to significantly reduce the circuit inductance, such as... Figure 1A The inductance Lloop in the bridge arm circuit should decrease proportionally as the frequency increases.

[0004] As a supplement, the semiconductor bridge arm is the basic unit and core of the power converter. It typically consists of at least two semiconductor power switches, Q1 and Q2, connected in series and then in parallel with a DC voltage. To reduce loop inductance, a decoupling capacitor, Cbus, is connected in parallel with the bridge arm near the DC voltage level. This limits the voltage spikes generated on the L-loop during switching due to sudden changes in di / dt current, ensuring normal operation.

[0005] In high-power converter applications, increasing power density also hinges on effective heat dissipation, particularly for semiconductor power devices. The more heat that can be handled, the higher the power output, thus increasing power density. Therefore, improving heat dissipation capabilities is a key area of ​​technological advancement in this field. Figure 1B and Figure 1C This is a typical example of existing double-sided heat dissipation technology. It should be noted that the technical features disclosed in this invention are all illustrated using double-sided heat dissipation embodiments as examples, but the technical features disclosed in this invention can all be applied to single-sided heat dissipation embodiments; and double-sided heat dissipation is usually used in applications with extremely high heat dissipation density requirements, therefore, liquid cooling heat dissipation devices are often used.

[0006] Existing technology involves soldering a copper lead frame onto an insulating thermally conductive layer (typically a ceramic substrate, hereinafter referred to as DBC), then soldering semiconductor power devices (such as MOSFETs, IGBTs, SiC, GaN) onto the copper frame, and finally leading the electrodes to the leads via bonding wires. To allow sufficient space for the bonding wire height, a thermally conductive pad (typically a copper alloy) is soldered to the power electrode on the upper surface of the semiconductor power device, and then an insulating thermally conductive layer is soldered to the upper surface of this thermally conductive pad. Finally, fins for liquid cooling components are soldered and bonded to the upper and lower surfaces of the assembly, thus achieving excellent double-sided heat dissipation.

[0007] However, due to the presence of thermal pads and the poor precision of the copper frame wiring, the bridge arm circuit is relatively large, usually difficult to be less than 10nH, and even at its best, it is usually above 5nH, which limits the increase in current and frequency.

[0008] Since the thermal pad is placed on top of the semiconductor power device through a soldering process, in order to ensure tolerance, the area of ​​the thermal pad is usually significantly smaller than the area of ​​the semiconductor power device. Furthermore, since the pad is relatively thick, usually at least 1 mm, its thermal resistance cannot be ignored. This limits the reduction of thermal resistance for upward heat dissipation of the semiconductor power device, thus preventing the achievement of a more ideal high heat dissipation effect.

[0009] In summary, existing high-heat dissipation technologies are insufficient in both high-frequency performance and thermal resistance. Therefore, how to simultaneously achieve high-frequency, high-current characteristics and near-ideal high heat dissipation capacity is an urgent problem to be solved. Summary of the Invention

[0010] In view of this, the purpose of the present invention is to provide a high heat dissipation high frequency power module and its manufacturing method, which can achieve high frequency and high current characteristics and near-ideal high heat dissipation capability.

[0011] The present invention provides a high heat dissipation high frequency power module, comprising: an embedded circuit board, at least two semiconductor power devices, at least one high frequency capacitor and an insulating thermally conductive carrier plate;

[0012] The embedded circuit board includes opposing upper and lower surfaces, an inner layer, at least one electrical connection path, and at least one high-density, high thermal and electrical conductivity path; the upper or lower surface includes at least one wiring layer.

[0013] The at least two semiconductor power devices are arranged horizontally within the embedded circuit board. Each semiconductor power device includes a power electrode. The power electrodes of the at least two semiconductor devices are electrically connected to the wiring layer through the electrical connection path. The power electrodes of the at least two semiconductor devices (through the wiring layer) are electrically connected to form at least one power conversion bridge arm.

[0014] The semiconductor power device includes two opposing device surfaces, and at least one device surface is connected to the wiring layer through the high-density, high thermal conductivity and high electrical conductivity path. The wiring layer connected to the high-density, high thermal conductivity and high electrical conductivity path can serve as a heat dissipation surface.

[0015] The high-frequency capacitor is disposed adjacent to the power conversion bridge arm and is electrically connected in parallel with the power conversion bridge arm to achieve low-loop electrical interconnection.

[0016] The insulating thermally conductive carrier plate includes an opposing thermally conductive upper surface and a thermally conductive lower surface, wherein the thermally conductive lower surface is fitted to the heat dissipation surface.

[0017] Preferably, it further includes a package that at least partially covers the embedded circuit board and the insulating thermally conductive carrier plate, wherein at least one end of the embedded circuit board extends directly or indirectly beyond the projection of the insulating thermally conductive carrier plate onto the embedded circuit board, and the thermally conductive upper surface of the insulating thermally conductive carrier plate is exposed.

[0018] Preferably, it also includes a heat dissipation component, which is attached to the surface of the insulating thermally conductive carrier plate. The heat dissipation component is a heat exchange fin, which is integrally formed with the insulating thermally conductive carrier plate.

[0019] Preferably, the electrical connection path includes a metal via path.

[0020] Preferably, the electrical connection path further includes an inner rewiring layer.

[0021] Preferably, the electrical connection path includes a bonding layer that bonds one surface of the semiconductor power device to the wiring layer, and the bonding layer is a conductive material or an insulating material.

[0022] Preferably, the direction in which at least two of the semiconductor power devices are connected is the first direction, and the direction perpendicular to the first direction in the same horizontal plane is the second direction;

[0023] The high-frequency capacitor is positioned in the second direction.

[0024] Preferably, the embedded circuit board further includes an interconnect metal layer disposed within the embedded circuit and at the same height as the semiconductor power device, wherein at least two of the semiconductor power devices are connected in series through the interconnect metal layer;

[0025] On the vertical cross-section of the interconnect metal layer, the projections of the wiring layer connected to the two electrodes of the high-frequency capacitor overlap.

[0026] Preferably, the high-frequency capacitor is disposed on the upper or lower surface of the embedded circuit board and is located between two semiconductor power devices in a power conversion bridge arm;

[0027] The insulating heat-conducting carrier plate and / or heat dissipation component are provided with a space avoidance structure to accommodate the high-frequency capacitor.

[0028] Preferably, the embedded circuit board has an opening structure located between two semiconductor power devices in one of the power conversion bridge arms, and the high-frequency capacitor is disposed at the opening structure.

[0029] Preferably, the high-frequency capacitor is embedded in an embedded circuit board, and the high-frequency capacitor is located between two semiconductor power devices in one of the power conversion bridge arms.

[0030] Preferably, the encapsulation body is formed by encapsulation with potting adhesive.

[0031] Preferably, the heat dissipation component includes an upper heat dissipation component and a lower heat dissipation component, which are located on the upper and lower sides of the embedded circuit board, respectively.

[0032] The upper heat dissipation component and the lower heat dissipation component are sealed and connected on one side of the embedded circuit board to form a cavity structure, which is filled with liquid potting adhesive.

[0033] Preferably, the embedded circuit board extends from the cavity structure in at least two directions.

[0034] Preferably, the high-heat-dissipation high-frequency power module further includes a liquid-cooled cover plate and a sealing element, which are disposed on the outside of the heat dissipation component, and the sealing element is disposed at the connection between the liquid-cooled cover plate and the heat dissipation component.

[0035] Preferably, the high heat dissipation high-frequency power module further includes a housing, one end of which is open and the other end is closed. An opening for accommodating a heat dissipation component is provided in the middle of the housing. The housing and the heat dissipation component are sealed together to form a cavity structure, which is filled with liquid potting adhesive.

[0036] Preferably, the high heat dissipation high-frequency power module further includes a thin-walled structure disposed between the housing and the heat dissipation component, the thin-walled structure being used to compensate for assembly tolerances.

[0037] Preferably, the high heat dissipation high-frequency power module further includes a sealing baffle, which is disposed on both sides of the heat dissipation component. One of the sealing baffles has an injection opening, and the sealing baffle is sealed to the heat dissipation component to form a cavity structure, which is filled with liquid potting adhesive.

[0038] Preferably, the sealing baffle is an irregularly shaped baffle to enclose and form a larger cavity structure.

[0039] Preferably, the package is formed by encapsulation with a plastic encapsulation material.

[0040] Preferably, the gap between the insulating thermally conductive carrier plate and the wiring layer is pre-filled with dot-shaped adhesive, and the sidewall of the insulating thermally conductive carrier plate has a stepped structure.

[0041] Preferably, the semiconductor power device is a vertical switching device, and the device surface corresponding to the upper or lower heat dissipation surface is the drain electrode of a MOSFET or the collector electrode of an IGBT.

[0042] Preferably, the semiconductor power device is a planar switching device, and the surface of the semiconductor power device corresponding to the upper or lower heat dissipation surface is the substrate of the semiconductor power device.

[0043] Preferably, the insulating thermally conductive carrier plate is a high thermal conductivity insulating film, and the thermal conductivity of the high thermal conductivity insulating film is >5W / mK.

[0044] Preferably, it also includes a system motherboard, and the embedded circuit board is electrically connected to the system motherboard.

[0045] Preferably, the embedded circuit board is soldered onto the system motherboard.

[0046] Preferably, the embedded circuit board is implanted within the system motherboard.

[0047] Preferably, one side of the embedded circuit board is flush with one side of the system motherboard, and the embedded circuit board and the system motherboard are electrically connected through a through-hole electrical connection structure and / or a surface wiring layer.

[0048] Preferably, the surface of the embedded circuit board is located inside the system motherboard, and the embedded circuit board and the system motherboard are electrically connected through a through-hole electrical connection structure.

[0049] Preferably, the high-frequency capacitor is disposed on the system motherboard and is located close to the embedded circuit board.

[0050] Preferably, it also includes a heat dissipation component, which is attached to the heat-conducting upper surface of the insulating heat-conducting carrier plate. Sealing baffles are also provided on both sides of the heat dissipation component. The sealing baffles are sealed to the heat dissipation component to form a cavity structure, which is filled with liquid potting adhesive.

[0051] Preferably, the sealing baffle is an irregularly shaped baffle to enclose and form a larger cavity structure.

[0052] Preferably, the heat dissipation component is provided with a liquid cooling cover plate on its exterior, and a sealing element is provided at the connection between the liquid cooling cover plate and the heat dissipation component.

[0053] Preferably, the liquid cooling cover extends beyond the side of the heat dissipation component to form a liquid flow channel, and a magnetic element is attached to the inner side of the liquid flow channel.

[0054] The magnetic element is sealed inside the outer side of the liquid flow channel by a sealing baffle.

[0055] Preferably, the sealing baffle between the liquid flow channel and the heat dissipation component is removed, so that the liquid flow channel, the heat dissipation component, and the sealing baffle form a cavity structure.

[0056] Preferably, the system motherboard within the cavity structure is provided with one or more of the following: a driving element, a low-frequency large-volume element, a control unit, and a magnetic element.

[0057] Preferably, within the same cavity structure, the system motherboard is provided with multiple embedded circuit boards, and each embedded circuit board is provided with one or more of the following on the system motherboard: a driving element, a low-frequency large-volume element, a control unit, and a magnetic element, to form a circuit unit; the multiple circuit units are integrated on a customer motherboard.

[0058] Preferably, the sealing baffle is integrally formed with the heat dissipation component.

[0059] Preferably, the embedded circuit board 1 has a vertical through-hole, and the high-frequency capacitor is disposed inside the through-hole.

[0060] Preferably, the high-frequency capacitor has horizontally extended capacitor terminals at both ends.

[0061] Preferably, the high heat dissipation high-frequency power module is a double-sided heat dissipation high-frequency power module. The two device surfaces of each semiconductor power device form wiring layers on the upper or lower surface of the embedded circuit board through high-density, high thermal conductivity connection paths. The wiring layers can be heat dissipation layers, which provide heat dissipation for the devices respectively.

[0062] The two insulating thermally conductive carrier plates are respectively attached to the heat dissipation layer on the upper surface and the heat dissipation layer on the lower surface of the embedded circuit board.

[0063] Another aspect of the present invention provides a method for manufacturing a double-sided heat dissipation high-frequency high-power module, comprising the following steps:

[0064] S1: A temporary protective layer is provided on one surface of the embedded circuit board 1;

[0065] S2: The embedded circuit board 1 is placed inside the system motherboard, and the surface of the embedded circuit board 1 without a temporary protective layer is flush with one surface of the system motherboard;

[0066] S3: Complete the setup of the through-hole electrical connection structure and the surface wiring layer;

[0067] S4: Cut away the periphery of the embedded circuit board 1 that needs to be exposed to reveal the temporary protective layer;

[0068] S5: Remove the temporary protective layer.

[0069] Another aspect of the present invention provides a method for manufacturing a double-sided heat dissipation high-frequency high-power module, comprising the following steps:

[0070] S1: Temporary protective layers are respectively provided on the upper and lower surfaces of the embedded circuit board 1;

[0071] S2: Place the embedded circuit board 1 inside the system motherboard;

[0072] S3: Complete the setup of the through-hole electrical connection structure;

[0073] S4: Cut away the periphery of the embedded circuit board 1 that needs to be exposed to reveal the temporary protective layer;

[0074] S5: Remove the temporary protective layer.

[0075] Preferably, before step S2, the method further includes: making a window opening in the system motherboard to accommodate the embedded circuit board.

[0076] Another aspect of the present invention provides an embedded integrated device unit for a high heat dissipation high-frequency power module, comprising an embedded circuit board, at least two semiconductor power devices, at least one high-frequency capacitor, and an insulating thermally conductive carrier plate;

[0077] The embedded circuit board includes opposing upper and lower surfaces, an inner layer, at least one electrical connection path, and at least one high-density, high thermal and electrical conductivity path. The upper or lower surface includes at least one wiring layer.

[0078] The at least two semiconductor power devices are arranged horizontally on the inner layer of the embedded circuit board. Each semiconductor power device includes a power electrode. The power electrodes of the at least two semiconductor power devices are electrically connected to the wiring layer through the electrical connection path. The power electrodes of the at least two semiconductor power devices (through the wiring layer) are connected in series to form at least one power conversion bridge arm.

[0079] The semiconductor power device includes two opposing device surfaces. At least one device surface is connected to the wiring layer through the high-density, high-thermal-conductivity and high-electric-conductivity path. The wiring layer connected to the high-density, high-thermal-conductivity and high-electric-conductivity path can serve as a heat dissipation surface and is attached to the insulating thermally conductive carrier plate.

[0080] The embedded circuit board includes at least two DC power electrodes, and the two ends of the high-frequency capacitor are electrically connected to the two DC power electrodes respectively, so that the power conversion bridge arm is connected in parallel with the high-frequency capacitor to achieve low-loop electrical interconnection.

[0081] Preferably, the embedded integrated device unit includes an upper heat dissipation surface and a lower heat dissipation surface opposite to each other. The device surface of each semiconductor power device is electrically connected to the wiring layer on the upper and lower surfaces of the embedded circuit board through high-density, high-thermal-conductivity electrical connection paths. The wiring layer is the upper heat dissipation surface and the lower heat dissipation surface of the semiconductor power device. The at least two insulating thermally conductive carrier plates are respectively attached to the upper heat dissipation surface and the lower heat dissipation surface to achieve double-sided heat dissipation.

[0082] Preferably, the semiconductor power device is a vertical switching device, and the device surface corresponding to the upper or lower heat dissipation surface is the drain electrode of a MOSFET or the collector electrode of an IGBT.

[0083] Preferably, the semiconductor power device is a planar switching device, and the surface of the semiconductor power device corresponding to the upper or lower heat dissipation surface is the substrate of the semiconductor power device.

[0084] Another aspect of the present invention provides a power converter with double-sided heat dissipation, comprising: a double-sided heat dissipation packaged integrated device unit, at least two insulating thermally conductive substrates, at least one large-area multilayer circuit board, at least one high-frequency capacitor, at least one magnetic component, at least one driving element, and two heat dissipation components.

[0085] The double-sided heat dissipation packaged integrated device unit includes at least two semiconductor power devices, opposite upper and lower surfaces of the device unit, and at least two low thermal resistance channels. Each semiconductor power device includes a power electrode and two opposite device surfaces. The power electrodes of each semiconductor power device are connected in series to form a bridge arm. The two device surfaces of each semiconductor power device are connected to the upper and lower surfaces of the device unit through the corresponding low thermal resistance channels.

[0086] The at least two insulating and thermally conductive substrates are respectively disposed on the upper surface and the lower surface of the device unit;

[0087] The large-area multilayer circuit board includes at least one opening for mounting the double-sided heat-dissipating packaged integrated device unit.

[0088] The at least one high-frequency capacitor is disposed adjacent to the bridge arm, the bridge arm includes at least two DC electrodes and a bridge arm midpoint, and the two ends of the high-frequency capacitor are electrically connected to the at least two DC electrodes respectively to form a low-loop power channel.

[0089] The at least one driving element is used to drive the semiconductor power device at a high frequency;

[0090] The at least one magnetic element is connected to the midpoint of the bridge arm, and the bridge arm and the magnetic element together realize the high-frequency energy conversion function;

[0091] The two heat dissipation components are respectively disposed on the outer surfaces of the insulating thermally conductive substrate and the magnetic element.

[0092] Compared with the prior art, the present invention has the following beneficial effects:

[0093] (1) Due to its excellent heat dissipation, this invention achieves a thermal resistance of less than 0.2 degrees Celsius / watt from the device to the wiring layer, less than 0.8 degrees Celsius / watt from the wiring layer to the outside of the insulating thermally conductive material, and less than 1 degree Celsius / watt on one side. The heat dissipation on both sides is less than 0.5 degrees Celsius / watt. Based on a temperature difference of 50 degrees Celsius, it allows 100W of heat generation per 10 square millimeters of semiconductor power device, meeting the high power requirements now and for a long time to come.

[0094] (2) Due to the excellent loop processing of the present invention, the inductance of the bridge arm loop composed of two semiconductor power devices each of 10 square millimeters has the potential to be less than 2nH or even less than 1nH, which is suitable for frequency requirements of MHz and far exceeds the current mainstream frequency of less than 100KHZ. Attached Figure Description

[0095] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0096] Figure 1A This is a circuit diagram of a semiconductor bridge arm in the prior art;

[0097] Figure 1B and Figure 1C This is a schematic diagram of a high heat dissipation module in the prior art;

[0098] Figure 2A This is a schematic diagram of the high heat dissipation high-frequency power module disclosed in the embodiments of the present invention;

[0099] Figure 2B This is a current diagram of a high-heat-dissipation, high-frequency power module using a vertical device as disclosed in an embodiment of the present invention.

[0100] Figure 3AThis is a schematic diagram of the conductive material bonding layer of the high heat dissipation high-frequency power module disclosed in the embodiments of the present invention.

[0101] Figure 3B This is a schematic diagram of the inner redistribution layer of the high heat dissipation high-frequency power module disclosed in the embodiments of the present invention.

[0102] Figure 4A This is a current diagram of a high-heat-dissipation, high-frequency power module using planar devices as disclosed in an embodiment of the present invention.

[0103] Figure 4B This is a schematic diagram of the insulating material bonding layer of the high heat dissipation high-frequency power module disclosed in the embodiments of the present invention;

[0104] Figure 5A and Figure 5B This is a schematic diagram showing the high-frequency capacitor of the high-heat dissipation high-frequency power module disclosed in the embodiment of the present invention arranged in the second direction;

[0105] Figure 5C This is a schematic diagram of the interconnect metal layer of the high heat dissipation high frequency power module disclosed in the embodiments of the present invention;

[0106] Figures 6A to 6C This is a schematic diagram showing different placement positions of the high-frequency capacitors in the high-heat dissipation high-frequency power module disclosed in the embodiments of the present invention;

[0107] Figures 7A to 7D This is a schematic diagram of the high heat dissipation high-frequency power module package disclosed in the embodiments of the present invention when liquid potting adhesive is used.

[0108] Figure 8A and Figure 8B This is a schematic diagram of the sealing baffle of the high heat dissipation high-frequency power module disclosed in the embodiments of the present invention;

[0109] Figure 9A and Figure 9B This is a schematic diagram showing the gaps between the wiring layers of the insulating thermally conductive carrier plate of the high heat dissipation high-frequency power module disclosed in the embodiments of the present invention, which are pre-filled with dot-shaped adhesive.

[0110] Figure 10A and Figure 10B This is a schematic diagram of the high thermal conductivity insulating film of the high heat dissipation high frequency power module disclosed in the embodiments of the present invention;

[0111] Figures 11A to 11D This is a schematic diagram illustrating the connection method between the embedded circuit board and the system motherboard of the high heat dissipation high-frequency power module disclosed in the embodiments of the present invention;

[0112] Figures 12A to 12D for Figure 11B A flowchart illustrating the fabrication method for connecting the embedded circuit board to the system motherboard;

[0113] Figures 13A to 13D for Figure 11C A flowchart illustrating the fabrication method for connecting the embedded circuit board to the system motherboard;

[0114] Figures 14A to 14D This is a schematic diagram illustrating the application of the embedded circuit board and system motherboard of the high heat dissipation high-frequency power module disclosed in the embodiments of the present invention.

[0115] Figures 15A to 15C This is a schematic diagram of the high heat dissipation high-frequency power module package disclosed in the embodiments of the present invention when it is encapsulated in plastic.

[0116] The components are: 1. Embedded circuit board; 2. High-frequency capacitor; 3. Insulating and thermally conductive carrier plate; 4. Package; 5. Heat dissipation component; 6. Semiconductor power device; 7. Electrical connection path; 8. Wiring layer; 9. Bonding layer; 10. Encapsulating adhesive; 11. Seal; 12. Liquid cooling cover plate; 13. Housing; 14. Sealing baffle; 15. Injection opening; 16. Dotted insulating adhesive; 17. Stepped structure; 18. High thermal conductivity insulating film; 19. System motherboard; 20. Through-hole electrical connection structure; 21. Magnetic component; 22. Horizontal terminal; 23. Temporary protective layer; 24. Inner redistribution layer; 25. Interconnect metal layer; 26. Thin-walled structure; 27. Protective adhesive; 28. Liquid flow channel. Detailed Implementation

[0117] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0118] Figures 2A to 2B A schematic diagram of a high-heat-dissipation, high-frequency power module disclosed in an embodiment of the present invention is shown, including:

[0119] An embedded circuit board 1 includes an upper surface and a lower surface, and an inner layer. The inner layer of the embedded circuit board 1 is provided with at least two semiconductor power devices 6. The semiconductor power devices 6 are horizontally arranged in the inner layer of the embedded circuit board 1, and the power electrodes of the semiconductor power devices 6 are electrically connected to the wiring layer 8 disposed on the upper surface and / or the lower surface of the embedded circuit board 1 through the electrical connection path 7. The power electrodes of at least two semiconductor power devices 6 are connected in series through the wiring layer 8 to form at least one power conversion bridge arm.

[0120] At least one high-frequency capacitor 2 is connected in parallel with the power conversion bridge arm in the nearest direction to achieve low-loop inductance interconnection.

[0121] Insulating and thermally conductive material is bonded to the surface of wiring layer 8. The insulating material can be insulating and thermally conductive carrier plate 3, insulating and thermally conductive coating, insulating and thermally conductive liquid, etc. Hereinafter, insulating and thermally conductive carrier plate 3 is used as a general term. The insulating and thermally conductive carrier plate includes a thermally conductive upper surface and a thermally conductive lower surface.

[0122] Encapsulation 4 covers at least the embedded circuit board 1 and the insulating thermally conductive carrier plate 3. Both ends of the embedded circuit board 1 extend outside the encapsulation body, and the surface of the insulating thermally conductive carrier plate 3 is exposed. Encapsulation 4 is not limited to plastic encapsulation or encapsulation 10 using potting adhesive that has been cured into a solid or gel state (hereinafter, potting adhesive encapsulation will be used as the description). Encapsulation 4 is only... Figure 2A The annotation is made in the middle, and other embodiments can add encapsulation body 4 based on this feature.

[0123] like Figure 2A As shown, taking a vertical switching device with two semiconductor power devices 6 as an example, the semiconductor power devices 6 are first embedded in an embedded circuit board 1 using an embedded process. The upper and lower surfaces are electroplated or plated after drilling, bringing the power electrodes of the semiconductor power devices 6 to the surface of the embedded circuit board 1 over a large area. This achieves low-loop inductance interconnection and near-lossless thermal interface conduction. Because this lead-out stroke is very short (e.g., less than 0.2 mm), has a large area (close to the area of ​​the upper and lower surfaces of the semiconductor power devices 6), and is usually made of copper, both the thermal resistance and electrical resistance are extremely small, almost negligible. Preferably, the area of ​​the overlapping area between the power electrode wiring of the semiconductor power devices 6 and the projected area of ​​the semiconductor power devices 6 on the surface of the embedded circuit board exceeds 60% of the area of ​​the semiconductor power devices 6. After the electrodes are brought out, the power loops of the two semiconductor power devices 6 are connected to the high-frequency capacitor 2 nearby through the surface wiring of the embedded circuit board 1, achieving low-loop inductance.

[0124] Figure 2B The current direction of the commutation loop is shown. It flows from Vbus+ through the left-hand semiconductor power device 6 to the SW terminal, and then through the upper and lower connection holes of the embedded circuit board 1 to the right-hand semiconductor power device 6, before flowing through the right-hand semiconductor power device 6 to Vbus-. It should be noted that the dashed arrows are offset from the solid lines in the vertical direction, and spatial overlap in the vertical direction can be achieved through upper and lower layer wiring. Because the current paths are opposite in direction, the loop inductance is reduced to a very low level.

[0125] like Figure 2AAs shown, the heat dissipation component 5 is attached to the upper and / or lower surface of the insulating thermally conductive carrier plate 3. The electrical connection path 7 includes metal via paths (i.e., high-density, high thermal conductivity and electrical conductivity paths or low thermal resistance paths). The embedded semiconductor power device 6 includes two opposing device surfaces, which are respectively connected to the upper and lower surfaces of the embedded circuit board 1 through metal via paths, and connected to the wiring layer 8 formed by a large-area surface metal layer disposed on the upper and lower surfaces. This metal layer can simultaneously have the functions of current conduction and heat conduction, or it can only have the function of heat conduction, and is also called a heat dissipation layer. In this embodiment, the metal via path can be a high-density, high thermal conductivity and electrical conductivity path, or it can only be a low thermal resistance path with low thermal resistance characteristics. A heat dissipation component 5 is provided between the surface metal layer of the embedded circuit board 1 and the external heat exchange environment to efficiently dissipate the heat generated by the semiconductor power device 6 to the environment. The heat dissipation component 5 is usually made of metal, such as... Figure 2A The heat-conducting lower surface of the insulating thermally conductive carrier plate 3 is attached to the heat dissipation surface of the upper and / or lower surface of the embedded circuit board 2. The surface of the insulating thermally conductive carrier plate 3 can also be covered with patterned metal. That is, the insulating thermally conductive carrier plate 3 can be an insulating and heat-conducting medium layer of thermally conductive and insulating carrier plates such as alumina copper-clad ceramic substrate, aluminum nitride copper-clad ceramic substrate, silicon nitride copper-clad ceramic substrate, beryllium oxide copper-clad ceramic substrate, and insulating metal substrate. The metal layer on the surface of the insulating thermally conductive carrier plate 3 and the metal layer on the surface of the embedded circuit board 1 can be electrically, thermally, and mechanically connected through sintering materials such as silver and copper, solder, and conductive silver paste. Figure 2A It can be seen that when the heat generated by the semiconductor power device 6 is dissipated to the external environment through the upward or downward path, it only passes through a single insulating thermally conductive substrate 3. Although the selected insulating material has a relatively high thermal conductivity, its thermal conductivity is still relatively low compared to metals such as copper. Therefore, this structure has the best heat dissipation effect.

[0126] In a preferred embodiment, the heat dissipation component 5 is a heat exchange fin, which is integrally formed with the insulating heat-conducting carrier plate 3. Alternatively, the heat exchange fins can be set on the surface of the insulating heat-conducting carrier plate 3 by welding, sintering, or other methods. Furthermore, these fins can be not only independent but also have a continuous substrate.

[0127] In other embodiments, the electrical connection path 7 includes a bonding layer 9 that bonds one surface of the semiconductor power device 6 to the wiring layer 8. The bonding layer 9 is a conductive material, such as... Figure 3AAs shown, vertical switching devices are typically three-port devices, with two power electrodes positioned on the upper and lower surfaces of the semiconductor power device 6 (e.g., the drain electrode of a MOSFET or the collector electrode of an IGBT), and the control electrode (not shown in detail in the embodiments of this paper for simplicity) and one of the power electrodes on the same surface. Therefore, one surface of the semiconductor power device 6 has only one electrode. In this case, this surface of the semiconductor power device 6 can be directly bonded to the wiring layer 8 of the embedded circuit board 1 using bonding materials (e.g., sintering materials such as silver or copper, solder, conductive silver paste, etc.) to form a bonding layer 9. This provides a larger conductive and heat-transfer area compared to via connections, potentially resulting in lower impedance and thermal resistance.

[0128] In a preferred embodiment, the electrical connection path 7 further includes an inner redistribution layer 24, such as Figure 3B As shown, the inner redistribution layer 24 is horizontally disposed inside the embedded circuit board 1 to meet the requirements of complex wiring. Of course, the number of inner redistribution layers 24 disposed on one or both sides of the semiconductor power device 6 can be flexibly set according to actual needs.

[0129] In a preferred embodiment, such as Figure 4A As shown, the electrodes of the planar switching device are all led out from the same surface of the semiconductor power device 6. This surface serves as the substrate of the semiconductor power device. After the electrodes are led out, the power loops of the two semiconductor power devices 6 are connected to the high-frequency capacitor 2 via wiring through the embedded circuit board 1, achieving low loop inductance. The arrows in the figure describe the current direction of the commutation loop. It should be noted that the dashed arrows are offset from the solid arrows in the direction perpendicular to the paper. Because the current directions are opposite along the path, the loop inductance can be controlled to be extremely low. Figure 4B As shown, the non-functional surface of the planar switching semiconductor power device 6 can be directly bonded to the wiring layer 8 of the embedded circuit board 1 through the bonding layer 9 (conductive materials such as silver, copper and other sintered materials, solder, conductive silver paste, etc.; non-conductive materials such as ceramic paste, glass paste, high thermal conductivity epoxy adhesive, high thermal conductivity silicone, etc.) to form the bonding layer 9.

[0130] In some other embodiments, the connection direction of the two semiconductor power devices 6 is a first direction, and the direction perpendicular to the first direction within the same horizontal plane is a second direction; the high-frequency capacitor 2 is disposed in the second direction. For example... Figure 5A , Figure 5B As shown, the high-frequency capacitor 2 is set in the extension direction of the embedded circuit board 1 perpendicular to the AA section, and Vbus+ and Vbus- can also be led out in the form of stacked layers in this direction. Figure 5AThe current direction of the circulating circuit with section AA is shown. It can be seen that the current is opposite along the plane of the paper and also opposite perpendicular to the plane of the paper. Therefore, the circuit inductance is very small.

[0131] In a preferred embodiment, an interconnect metal layer 25 is disposed within the embedded circuit board 1 at the same height as the semiconductor power devices 6, and at least two semiconductor power devices 6 are connected in series through the interconnect metal layer 25; on the vertical cross-section of the interconnect metal layer 25, the projection of the wiring layer connected to the two electrodes of the high-frequency capacitor 2 overlaps, such as... Figure 5C As shown, this can further reduce the parasitic inductance of the circuit.

[0132] In some other embodiments, the high-frequency capacitor 2 is disposed on one surface of the embedded circuit board 1 and located between two semiconductor power devices 6 of a power conversion bridge arm; the insulating thermally conductive carrier plate 3 and / or heat dissipation component 5 are provided with a space clearance structure to accommodate the high-frequency capacitor 2, such as... Figure 6A As shown, the high-frequency capacitor 2 is placed on the surface of the embedded circuit board 1, located between the two semiconductor power devices 6. As can be seen from the current flow of the power circuit in the figure, the current directions of the upper and lower layers are opposite, so the circuit inductance is extremely small. In order to avoid the high-frequency capacitor 2, a hole needs to be opened between the insulating heat-conducting carrier plates 3 on one side, and the corresponding heat dissipation component 5 may also need to be spaced out.

[0133] In a preferred embodiment, an opening structure is provided on the embedded circuit board 1, located between two semiconductor power devices 6 of a power conversion bridge arm, and a high-frequency capacitor 2 is disposed at the opening structure, such as... Figure 6B As shown.

[0134] In a preferred embodiment, the high-frequency capacitor 2 is embedded within the embedded circuit board 1, and is located between two semiconductor power devices 6 in a power conversion bridge arm, such as... Figure 6C As shown.

[0135] In other embodiments, the encapsulation 4 is formed by encapsulating with potting adhesive 10. The heat dissipation component 5 includes an upper heat dissipation component and a lower heat dissipation component, which are located on the upper and lower sides of the embedded circuit board 1, respectively. The upper and lower heat dissipation components are sealed to one side of the embedded circuit board 1 to form a cavity structure. The cavity structure is filled with liquid potting adhesive and cured to form the potting adhesive encapsulation 10. To reduce the creepage distance between circuit board surface lines and between circuit board surface lines of the insulating thermally conductive carrier 3, filling these areas with insulating material is a very effective method. Among these methods, using liquid potting adhesive and curing it to form the potting adhesive encapsulation 10 (such as liquid epoxy potting adhesive, silicone potting adhesive, etc.) is one of the most commonly used methods. Figure 7AAs shown, the upper and lower heat dissipation components are first assembled with the insulating thermally conductive carrier plate 3 using materials such as silver or copper sintering, solder, or silver paste. Then, a sealing element 11, such as liquid sealant, is placed between the upper and lower heat dissipation components. Alternatively, the sealing interface can be closed by welding, such as fusion welding or friction stir welding. Next, potting compound is poured into the cavity formed by the sealing of the upper and lower heat dissipation components and allowed to cure. For better filling effect, vacuum degassing processes can be used.

[0136] In a preferred embodiment, the embedded circuit board 1 extends a cavity structure in at least two directions, such as Figure 7B As shown, with Figure 7A The difference is that the embedded circuit board 1 extends in two or more directions to form a closed space with heat dissipation components 5, so as to increase the convenience of input and output.

[0137] Furthermore, a liquid cooling cover plate 12 is provided on the outside of the heat dissipation component 5. The liquid cooling cover plate 12 and the heat dissipation component 5 can be sealed with a sealing ring to prevent leakage, or they can be sealed by welding, such as fusion welding or friction stir welding. Figure 7C As shown.

[0138] In a preferred embodiment, it further includes a housing 13, one end of which is open, and an opening in the middle of which is provided to accommodate the heat dissipation component 5. The housing 13 and the heat dissipation component 5 are sealed together to form a cavity structure. The cavity structure is filled with liquid potting adhesive and cured to form a potting adhesive encapsulation 10. Figure 7D As shown, one end of the housing 13 is open to expose one end of the embedded circuit board 1, and there are openings at the positions of the upper and lower heat dissipation components. The material of the housing 13 is not limited to metal or non-metal. The upper and lower heat dissipation components are then assembled with the insulating thermally conductive carrier plate 3 using materials such as silver or copper sintering, solder, or silver paste. The upper and lower heat dissipation components and the housing 13 are then sealed with sealant; alternatively, welding, such as fusion welding or friction stir welding, can also be used to achieve a sealed interface. This ensures that all machined surfaces are planar, avoiding three-dimensional machining.

[0139] Furthermore, in order to absorb assembly tolerances, a thin-walled structure 26 can be provided between the heat dissipation component 5 and the housing 13.

[0140] In some other embodiments, sealing baffles 14 are also provided on both sides of the heat dissipation component 5. One sealing baffle 14 has an injection opening 15. The sealing baffle 14 is sealed to the heat dissipation component 5 to form a cavity structure. The cavity structure is filled with liquid potting adhesive and cured to form a potting adhesive encapsulation 10. For example... Figure 8AAs shown, the sealing baffle 14 uses sealing materials, such as liquid sealant. Of course, it can also be closed by welding, such as fusion welding or friction stir welding, to achieve the closure of the sealing interfaces that need to be sealed. Then, potting glue is injected through the glue injection opening 15.

[0141] Furthermore, the sealing baffle 14 is an irregularly shaped sealing baffle 14 to enclose and form a larger cavity structure, such as... Figure 8B As shown, this allows for the use of a larger motherboard and the integration of more functions, such as driver components. Of course, the sealing baffle 14 can also be integrally formed with the heat dissipation component 5, that is, the heat dissipation component 5 is also the outer shell of the module.

[0142] In other embodiments, the gap between the insulating thermally conductive carrier plate 3 and the wiring layer 8 is pre-filled with dot-shaped insulating adhesive 16, and the sidewall of the insulating thermally conductive carrier plate 3 has a stepped structure 17, such as... Figure 9A , Figure 9B As shown, the gaps between the wiring layers of the insulating thermally conductive carrier board 3 are first filled using methods such as dispensing and compression molding. This effectively reduces the amount of adhesive used and the risk of air bubbles being introduced. Furthermore, the outer sidewalls of the wiring of the insulating thermally conductive carrier board 3 can also be protected with protective adhesive 27, which significantly improves the reliability of the insulating thermally conductive carrier board 3. Even further, the wiring sidewalls of the insulating thermally conductive carrier board 3 can be designed with a stepped structure 17, which further improves the reliability of the insulating thermally conductive carrier board 3. Then, bonding material and dotted insulating adhesive 16 are applied to the insulating thermally conductive carrier board 3 or the embedded circuit board 1 as needed. Subsequently, the insulating thermally conductive carrier board 3 and the embedded circuit board 1 are stacked and assembled using methods such as reflow and sintering. It should be noted that the molding process of the bonding material and the curing process of the insulating adhesive must be compatible. Such a material combination can use solder paste for bonding material and SMT red glue or reflow underfill for insulating material. When using silver or copper sintering materials for bonding, and conductive silver paste, use thermosetting adhesives with similar curing curves for insulating adhesives.

[0143] In other embodiments, the insulating and thermally conductive material is a high thermal conductivity insulating film 18, and the thermal conductivity of the high thermal conductivity insulating film 18 is >5 W / mK, such as... Figure 10A , Figure 10B As shown, the high thermal conductivity insulating film 18 used is a high thermal conductivity material filled with ceramic particles within an organic material. It possesses a certain deformation absorption capacity, along with a high thermal conductivity (>5W / mK) and high insulation capability. Copper foil ( Figure 10A ) or heat dissipation components with heat exchange fins 5 ( Figure 10B ) Adhere to the outside of the high thermal conductivity insulating film 18.

[0144] In some other embodiments, the module also includes a system motherboard 19, with the embedded circuit board 1 electrically connected to the system motherboard 19. Because the embedded circuit board 1 requires high precision and has a complex manufacturing process, its cost is high. Therefore, a more economical approach is to use embedded technology for critical components, while using traditional printed circuit boards for the remaining parts. Therefore, the connection method between the system motherboard 19 and the embedded circuit board 1 needs to be considered. Figure 11A As shown, the embedded circuit board 1 is soldered onto the system motherboard 19, thus connecting the embedded circuit board 1 and the system motherboard 19.

[0145] Furthermore, the embedded circuit board 1 can be implanted within the system motherboard 19, such as... Figure 11B , Figure 11C As shown, the embedded circuit board 1 is implanted into the system motherboard 19 and electrically connected to the structure 20 through a through-hole. Figure 11B , Figure 11C ) or surface wiring layer 8 ( Figure 11B This enables the electrical connection between the system motherboard 19 and the embedded circuit board 1.

[0146] Furthermore, the high-frequency capacitor 2 can be placed on the system motherboard 19, close to the embedded circuit board 1, such as... Figure 11D As shown, the embedded circuit board 1 is soldered onto the system motherboard 19, and the high-frequency capacitor 2 is placed on the system motherboard 19 at the position closest to the embedded circuit board 1.

[0147] The advantage of this embodiment is that the interconnection leads between the embedded circuit board 1 and the system motherboard 19 are very short. Even like Figure 11D Placing the high-frequency capacitor 2 on the system motherboard 19 also allows for the achievement of a very small loop inductance. Compared to placing the high-frequency capacitor 2 on the embedded circuit board 1, the loop inductance will increase slightly, but it is still significantly better than existing solutions, meeting the needs of many scenarios, reducing the complexity of the embedded circuit board 1, and improving the yield rate and the compactness of the heat dissipation system.

[0148] Figures 12A to 12D As shown Figure 11B The steps for creating the module shown are as follows:

[0149] S1: A temporary protective layer 23 is provided on the upper surface of the embedded circuit board 1, such as... Figure 12A As shown, since the lower surface of the embedded circuit board 1 is flush with the surface of the system motherboard 19, the lower surface of the embedded circuit board 1 does not need to be covered with a temporary protective layer 23, and the graphic segmentation of this surface does not need to be done during the fabrication of the embedded circuit board 1.

[0150] S2: The embedded circuit board 1 is placed inside the system motherboard 19, and the surface of the embedded circuit board 1 without the temporary protective layer 23 is flush with one surface of the system motherboard 19;

[0151] S3: Complete the setup of the through-hole electrical connection structure 20 and the surface wiring layer, such as... Figure 12B As shown, it should be noted that the stacked structure of the system motherboard 19 can be customized by opening up the prepreg (PP), core, etc. located at the embedded circuit board 1 according to actual needs.

[0152] S4: Trim away the outer perimeter of the embedded circuit board 1 that needs to be exposed, revealing the temporary protective layer 23, such as... Figure 12C As shown, it can also be removed entirely;

[0153] S5: Remove temporary protective layer 23, such as Figure 12D As shown, this forms the final structure.

[0154] Figures 13A to 13D As shown Figure 11C The steps for creating the module shown are as follows:

[0155] S1: Temporary protective layers 23 are respectively provided on the upper and lower surfaces of the embedded circuit board 1, such as... Figure 13A As shown;

[0156] S2: Place the embedded circuit board 1 inside the system motherboard 19;

[0157] S3: Complete the setup of the through-hole electrical connection structure 20, such as... Figure 13B As shown, it should be noted that the stacked structure of the system motherboard 19 may require windowing of the prepreg (PP), core, etc., located at the embedded circuit board 1, depending on the actual situation.

[0158] S4: Trim away the outer perimeter of the embedded circuit board 1 that needs to be exposed, revealing the temporary protective layer 23, such as... Figure 13C As shown;

[0159] S5: Remove the temporary protective layer 23 to form the final structure, such as Figure 13D As shown.

[0160] In some other embodiments, a liquid-cooled cover plate 12 is provided on the outside of the heat dissipation component 5, and a seal 11 is provided at the connection between the liquid-cooled cover plate 12 and the heat dissipation component 5. The liquid-cooled cover plate 12 extends beyond the side of the heat dissipation component 5 to form a liquid flow channel 28. A magnetic element 21 is attached to the inner side of the liquid flow channel 28. The magnetic element 21 is sealed inside the outer side of the liquid flow channel 28 by a sealing baffle 14. One or more of the following are provided on the system mainboard 19 inside the cavity structure: a driving element, a low-frequency large-volume element, a control unit, and a magnetic element 21. Figure 14A As shown, the system motherboard 19 integrates multiple functions, such as a controller, a low-frequency large-volume capacitor, and magnetic components 21 used in the switching power supply, such as inductors or transformers. Furthermore, the liquid cooling cover 12 can dissipate heat from the magnetic components 21. Moreover, liquid flow channels 28 can be integrated inside the liquid cooling cover 12 at positions corresponding to the magnetic components 21 to further enhance its heat dissipation capacity. The cooling water used is from the same source as the liquid used for cooling the semiconductor power devices 6, further simplifying the cooling design.

[0161] In a preferred embodiment, the sealing baffle 14 between the fluid channel 28 and the heat dissipation component 5 is removed, so that the fluid channel 28, the heat dissipation component 5, and the sealing baffle 14 form a larger cavity structure. Figure 14B As shown, relative Figure 14A The main difference is that the potting part also includes the magnetic component 21, which is of great help in improving the withstand voltage of the magnetic component 21, especially the withstand voltage of the primary and secondary sides of the transformer, and reducing the spatial distance between the terminals.

[0162] In a preferred embodiment, within the same cavity structure, a plurality of embedded circuit boards 1 are disposed on the system motherboard 19. Each embedded circuit board 1 is accompanied by one or more of the following on the system motherboard 19: a driving element, a low-frequency large-volume component, a control unit, and a magnetic component 21, to form a circuit unit. Figure 14C As shown, relative Figure 14B The main difference is that the potting section includes multiple embedded circuit boards 1 and integrates more secondary-side drivers, controls, capacitors, and other components to achieve more complex circuit functions. Furthermore, multiple circuit units are integrated onto a single system motherboard 19, such as... Figure 14D As shown, to use multiple Figure 12C The module shown is integrated onto a system motherboard 19 to expand power.

[0163] In some other embodiments, the package 4 is formed by encapsulation with a molding compound, such as... Figure 15A As shown, the transfer molding encapsulation method, with the help of injection pressure, can better fill tiny gaps. Furthermore, due to the high strength of the encapsulating material, it can also serve to reinforce the structure.

[0164] In a preferred embodiment, the embedded circuit board 1 has a vertical through-hole, and the high-frequency capacitor 2 is disposed within the through-hole, such as... Figure 15B As shown, holes can be made between the embedded circuit boards 1 to mount high-frequency capacitors 2 with a higher thickness. The terminals of the high-frequency capacitors 2 can be connected to the surface and sidewalls of the embedded circuit boards 1 through solder.

[0165] Furthermore, it can be like Figure 15CAs shown, horizontally extended terminals 22 are provided at both ends of the high-frequency capacitor 2. Due to the structural reinforcement effect of the molding compound, the risk of cracking of the high-frequency capacitor 2 body and connection points caused by the easy installation of the through-type high-frequency capacitor 2 can be effectively avoided.

[0166] Another aspect of the present invention discloses an embedded integrated device unit for a high heat dissipation high frequency power module, including an embedded circuit board 1, at least two semiconductor power devices 6, at least one high frequency capacitor 2, and an insulating thermally conductive carrier plate 3.

[0167] The embedded circuit board 1 includes opposing upper and lower surfaces, an inner layer, at least one electrical connection path 7, and at least one high-density, high-thermal-conductivity-electrical-conductivity path. The upper or lower surface includes at least one wiring layer 8. At least two semiconductor power devices 6 are horizontally arranged in the inner layer of the embedded circuit board 1. Each semiconductor power device 6 includes a power electrode. The power electrodes of the at least two semiconductor power devices 6 are electrically connected to the wiring layer 8 through the electrical connection path 7. The power electrodes of the at least two semiconductor power devices 6 (through the wiring layer 8) are connected in series to form at least one power conversion bridge arm. The semiconductor power devices 6 include two opposing device surfaces. At least one device surface is connected to the wiring layer through a high-density, high-thermal-conductivity-electrical-conductivity path. The wiring layer connected to the high-density, high-thermal-conductivity-electrical-conductivity path can serve as a heat dissipation surface and is attached to the insulating thermally conductive carrier plate 3. The embedded circuit board includes at least two DC power electrodes. The two ends of a high-frequency capacitor are electrically connected to the two DC power electrodes respectively, so that the power conversion bridge arm is connected in parallel with the high-frequency capacitor to achieve low-loop electrical interconnection.

[0168] In a preferred embodiment, the embedded integrated device unit includes an upper heat dissipation surface and a lower heat dissipation surface opposite to each other. The device surface of each semiconductor power device 6 is electrically connected to the wiring layer 8 on the upper and lower surfaces of the embedded circuit board 1 through high-density, high thermal conductivity electrical connection paths. The wiring layer 8 is the upper heat dissipation surface and the lower heat dissipation surface of the semiconductor power device 6. At least two insulating thermally conductive carrier plates 3 are respectively attached to the upper heat dissipation surface and the lower heat dissipation surface to achieve double-sided heat dissipation.

[0169] In a preferred embodiment, the semiconductor power device 6 is a vertical switching device, and the device surface corresponding to the upper or lower heat dissipation surface of the embedded integrated device unit is the drain electrode of the MOSFET or the collector electrode of the IGBT; in other embodiments, the semiconductor power device 6 may also be a planar switching device, and the surface of the semiconductor power device 3 corresponding to the upper or lower heat dissipation surface of the embedded integrated device unit is the substrate of the semiconductor power device.

[0170] Another aspect of this invention discloses a double-sided heat-dissipating power converter, comprising: a double-sided heat-dissipating packaged integrated device unit, at least two insulating thermally conductive substrates, at least one large-area multilayer circuit board, at least one high-frequency capacitor, at least one magnetic component, at least one driving element, and two heat dissipation components; the double-sided heat-dissipating packaged integrated device unit includes at least two semiconductor power devices 6, opposing upper and lower surfaces of the device unit, and at least two low thermal resistance channels. Each semiconductor power device 6 includes a power electrode and two opposing device surfaces. The power electrodes of each semiconductor power device 6 are connected in series to form a bridge arm. The two device surfaces of each semiconductor power device 6 are connected through corresponding low thermal resistance channels. The device unit is connected to its upper and lower surfaces; at least two insulating thermally conductive substrates are respectively disposed on the upper and lower surfaces of the device unit; a large-area multilayer circuit board includes at least one opening for mounting a double-sided heat-dissipating packaged integrated device unit; at least one high-frequency capacitor is disposed adjacent to a bridge arm, the bridge arm includes at least two DC electrodes and a bridge arm midpoint, and the two ends of the high-frequency capacitor are electrically connected to at least two DC electrodes to form a low-loop power channel; at least one driving element is used to drive the semiconductor power device at high frequency; at least one magnetic element is connected to the midpoint of the bridge arm, and the bridge arm and the magnetic element together realize the high-frequency energy conversion function; two heat dissipation components are respectively disposed on the outer surfaces of the insulating thermally conductive substrate and the magnetic element.

[0171] The embodiments disclosed in this invention all have excellent dual-sided heat dissipation capabilities. However, even if the technical features disclosed in this invention are applied to a single-sided heat dissipation device, good heat dissipation capabilities can still be achieved while also taking into account high-frequency electrical capabilities.

[0172] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0173] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A high-heat-dissipation, high-frequency power module, characterized in that, include: At least one embedded circuit board, at least two semiconductor power devices, at least one high-frequency capacitor, and an insulating thermally conductive substrate; The embedded circuit board includes opposing upper and lower surfaces, an inner layer, at least one electrical connection path, and at least one high-density, high thermal and electrical conductivity path; the upper surface of the embedded circuit board includes a first wiring layer, and the lower surface of the embedded circuit board includes a second wiring layer. The at least two semiconductor power devices are placed in the at least one embedded circuit board, each semiconductor power device includes a power electrode, the power electrodes of the at least two semiconductor power devices are electrically connected to the first wiring layer or the second wiring layer through the electrical connection path, and the power electrodes of the at least two semiconductor power devices are electrically connected inside the power module to form at least one power conversion bridge arm. The semiconductor power device includes two opposing device surfaces, which are respectively connected to the first wiring layer and the second wiring layer through the high-density, high thermal conductivity and high electrical conductivity path. Both the first wiring layer and the second wiring layer are heat dissipation surfaces. The high-frequency capacitor is disposed adjacent to the power conversion bridge arm and is electrically connected to the power conversion bridge arm in parallel to achieve low-loop electrical interconnection. The insulating thermally conductive carrier plate includes an opposing thermally conductive upper surface and a thermally conductive lower surface. The thermally conductive lower surface is attached to the heat dissipation surface, and the insulating thermally conductive carrier plate covers the area corresponding to the power conversion bridge arm. The high-frequency capacitor is located outside the area covered by the insulating thermally conductive carrier plate. The connection direction of the at least two semiconductor power devices is the first direction; the direction perpendicular to the first direction in the same horizontal plane is the second direction, and the high-frequency capacitor is disposed in the second direction; the electrical interconnection between the power conversion bridge arm and the two ends of the high-frequency capacitor is led out in the second direction in a stacked form to realize the low-loop electrical interconnection.

2. The high-heat dissipation, high-frequency power module according to claim 1, characterized in that, The capacitors are arranged in rows parallel to the edge of the heat dissipation component.

3. The high heat dissipation high-frequency power module according to claim 1, characterized in that, It also includes a package and a heat dissipation component. The package at least covers a portion of the embedded circuit board and the insulating thermally conductive carrier plate. At least one end of the embedded circuit board extends directly or indirectly beyond the projection of the insulating thermally conductive carrier plate onto the embedded circuit board. The thermally conductive upper surface of the insulating thermally conductive carrier plate is exposed. The heat dissipation component is attached to the surface of the insulating thermally conductive carrier plate.

4. The high-heat dissipation, high-frequency power unit as described in claim 3, characterized in that, The heat dissipation component includes an upper heat dissipation component and a lower heat dissipation component, which are located on the upper and lower sides of the embedded circuit board, respectively.

5. A high-heat dissipation, high-frequency power unit as described in claim 4, characterized in that, The package is formed by encapsulating with potting adhesive; the upper heat dissipation component and the lower heat dissipation component are sealed and connected on one side of the embedded circuit board to form a cavity structure, the cavity structure is filled with liquid potting adhesive, and the liquid potting adhesive is cured inside the cavity structure.

6. The high-heat dissipation, high-frequency power unit as described in claim 5, characterized in that, The cavity structure extends from at least one embedded circuit board in at least two directions.

7. A high-heat dissipation, high-frequency power unit as described in claim 5, characterized in that, The high-heat-dissipation, high-frequency power module also includes a liquid-cooled cover plate and a seal, which are disposed on the outside of the heat dissipation component. The seal is disposed at the connection between the liquid-cooled cover plate and the heat dissipation component.

8. A high-heat dissipation, high-frequency power unit as described in claim 5, characterized in that, The high heat dissipation high-frequency power module also includes a housing, one end of which is open and the other end is closed. An opening for accommodating a heat dissipation component is provided in the middle of the housing. The housing and the heat dissipation component are sealed together to form a cavity structure, which is filled with liquid potting adhesive.

9. A high-heat dissipation, high-frequency power unit as described in claim 8, characterized in that, The high heat dissipation high-frequency power module also includes a thin-walled structure, which is disposed between the outer shell and the heat dissipation component. The thin-walled structure is used to compensate for assembly tolerances.

10. The high heat dissipation high-frequency power module according to claim 5, characterized in that, The high heat dissipation high-frequency power module also includes a sealing baffle, which is disposed on both sides of the heat dissipation component. One of the sealing baffles has an injection opening. The sealing baffle is sealed to the heat dissipation component to form a cavity structure, which is filled with liquid potting adhesive.

11. The high heat dissipation high-frequency power module according to claim 10, characterized in that, The sealing baffle is an irregularly shaped baffle to enclose and form a larger cavity structure.

12. The high-heat dissipation, high-frequency power module according to claim 1, characterized in that, The package is formed by encapsulation with a plastic encapsulation material; the gap between the insulating thermally conductive carrier plate and the first wiring layer or the second wiring layer is pre-filled with dot-shaped adhesive, and the sidewall of the insulating thermally conductive carrier plate has a stepped structure.

13. The high heat dissipation high-frequency power module according to claim 1, characterized in that, It also includes a system motherboard, and the embedded circuit board is electrically connected to the system motherboard.

14. The high-heat dissipation, high-frequency power module according to claim 13, characterized in that, The embedded circuit board is implanted in the system motherboard or soldered onto the system motherboard; one side of the embedded circuit board is flush with one side of the system motherboard, or the surface of the embedded circuit board is located inside the system motherboard; the embedded circuit board and the system motherboard are electrically connected through a through-hole electrical connection structure and / or a surface wiring layer.

15. The high-heat dissipation, high-frequency power module according to claim 14, characterized in that, The high-frequency capacitor is mounted on the system motherboard and is close to the embedded circuit board. It also includes a heat dissipation component, which is attached to the heat-conducting upper surface of the insulating thermally conductive carrier plate. Sealing baffles are also provided on both sides of the heat dissipation component. The sealing baffles are sealed to the heat dissipation component to form a cavity structure, which is filled with liquid potting adhesive.

16. The high-heat dissipation, high-frequency power module according to claim 15, characterized in that, The heat dissipation component is provided with a liquid cooling cover plate on its exterior, and a sealing element is provided at the connection between the liquid cooling cover plate and the heat dissipation component.

17. The high-heat dissipation, high-frequency power module according to claim 16, characterized in that, The liquid cooling cover extends beyond the side of the heat dissipation component to form a liquid flow channel, and a magnetic element is attached to the inner side of the liquid flow channel. The magnetic element is sealed inside the outer side of the liquid flow channel by a sealing baffle.

18. The high-heat dissipation, high-frequency power module according to claim 17, characterized in that, Remove the sealing baffle between the liquid flow channel and the heat dissipation component, so that the liquid flow channel, heat dissipation component, and sealing baffle form a cavity structure.

19. The high-heat dissipation, high-frequency power module according to claim 15, characterized in that, The system motherboard within the cavity structure is equipped with one or more of the following: driving elements, low-frequency large-volume elements, control units, and magnetic elements.

20. The high-heat dissipation, high-frequency power module according to claim 18, characterized in that, Within the same cavity structure, the system motherboard is provided with multiple embedded circuit boards. Each embedded circuit board is provided with one or more of the following on the system motherboard: a driving element, a low-frequency large-volume element, a control unit, and a magnetic element, to form a circuit unit. Multiple circuit units are integrated on a customer motherboard.

21. The high-heat dissipation, high-frequency power module according to claim 1, characterized in that, The embedded circuit board has a vertical through-hole, and the high-frequency capacitor is placed inside the through-hole.

22. The high-heat dissipation, high-frequency power module according to claim 1, characterized in that, The at least two semiconductor power devices located in the same power conversion bridge arm are located in the same embedded circuit board.

23. A method for manufacturing a high-heat-dissipation, high-frequency power module as described in claim 14, characterized in that, Includes the following steps: S1: A temporary protective layer is provided on one surface of the embedded circuit board; S2: An embedded circuit board is placed inside the system motherboard, and the surface of the embedded circuit board without a temporary protective layer is flush with one surface of the system motherboard; S3: Complete the setup of the through-hole electrical connection structure and the surface wiring layer; S4: Trim away the periphery of the embedded circuit board that needs to be exposed to reveal a temporary protective layer; S5: Remove the temporary protective layer.

24. A method for manufacturing a high-heat-dissipation, high-frequency power module as described in claim 14, characterized in that, Includes the following steps: S1: Temporary protective layers are set on the upper and lower surfaces of the embedded circuit board respectively; S2: The embedded circuit board is placed inside the system motherboard; S3: Complete the setup of the through-hole electrical connection structure; S4: Trim away the periphery of the embedded circuit board that needs to be exposed to reveal a temporary protective layer; S5: Remove the temporary protective layer.

25. A high-heat-dissipation, high-frequency power module, characterized in that, include: At least one embedded circuit board, at least two semiconductor power devices, at least one high-frequency capacitor, an insulating thermally conductive carrier plate, and a double-sided heat dissipation semi-enclosed heat sink; The embedded circuit board includes opposing upper and lower surfaces, an inner layer, and at least two electrical connection paths, the electrical connection paths including high-density, high thermal and electrical conductivity paths; the upper surface of the embedded circuit board includes a first wiring layer, and the lower surface of the embedded circuit board includes a second wiring layer; The at least two semiconductor power devices are placed in the at least one embedded circuit board, each semiconductor power device includes a power electrode, the power electrodes of the at least two semiconductor power devices are electrically connected to the first wiring layer or the second wiring layer through the electrical connection path, and the power electrodes of the at least two semiconductor power devices are electrically connected inside the power module to form at least one power conversion bridge arm. The semiconductor power device includes two opposing device surfaces, which are respectively connected to the first wiring layer and the second wiring layer through the high-density, high thermal conductivity and high electrical conductivity path. Both the first wiring layer and the second wiring layer are heat dissipation surfaces. The high-frequency capacitor is disposed adjacent to the power conversion bridge arm and is electrically connected to the power conversion bridge arm in parallel to achieve low-loop electrical interconnection. The insulating thermally conductive carrier plate includes an opposing thermally conductive upper surface and a thermally conductive lower surface. The thermally conductive lower surface is attached to the heat dissipation surface, and the insulating thermally conductive carrier plate covers the area corresponding to the power conversion bridge arm. The double-sided semi-enclosed heat dissipation cover includes an upper heat dissipation component and a lower heat dissipation component, which are respectively located on the upper and lower sides of at least one embedded circuit board. The upper and lower heat dissipation components are sealed to one side of the at least one embedded circuit board to form a cavity structure. The cavity structure is filled with liquid potting adhesive, which cures within the cavity structure. The double-sided semi-enclosed heat dissipation cover and the insulating thermally conductive carrier plate are connected by at least one of sintering material, solder, and silver paste. The connection direction of the at least two semiconductor power devices is the first direction; the direction perpendicular to the first direction in the same horizontal plane is the second direction, and the high-frequency capacitor is disposed in the second direction; the electrical interconnection between the power conversion bridge arm and the two ends of the high-frequency capacitor is led out in the second direction in a stacked form to realize the low-loop electrical interconnection.

26. The high-heat dissipation, high-frequency power module according to claim 25, characterized in that, The cavity structure extends from at least one embedded circuit board in at least two directions.

27. The high-heat dissipation, high-frequency power module according to claim 25, characterized in that, The high-heat-dissipation, high-frequency power module also includes a liquid-cooled cover plate and a seal, which are disposed on the outside of the heat dissipation component. The seal is disposed at the connection between the liquid-cooled cover plate and the heat dissipation component.

28. The high-heat dissipation, high-frequency power module according to claim 25, characterized in that, The high heat dissipation high-frequency power module also includes a housing, one end of which is open and the other end is closed. An opening for accommodating a heat dissipation component is provided in the middle of the housing. The housing and the heat dissipation component are sealed together to form a cavity structure, which is filled with liquid potting adhesive.

29. The high-heat dissipation, high-frequency power module according to claim 28, characterized in that, The high heat dissipation high-frequency power module also includes a thin-walled structure, which is disposed between the outer shell and the heat dissipation component. The thin-walled structure is used to compensate for assembly tolerances.

30. The high-heat dissipation, high-frequency power module according to claim 25, characterized in that, The high heat dissipation high-frequency power module also includes a sealing baffle, which is disposed on both sides of the heat dissipation component. One of the sealing baffles has an injection opening. The sealing baffle is sealed to the heat dissipation component to form a cavity structure, which is filled with liquid potting adhesive.

31. The high-heat dissipation, high-frequency power module according to claim 30, characterized in that, The sealing baffle is an irregularly shaped baffle to enclose and form a larger cavity structure.

32. The high heat dissipation high-frequency power module according to claim 25, characterized in that, Two insulating thermally conductive carrier plates are provided, and the two insulating thermally conductive carrier plates are respectively attached to the heat dissipation surface on the upper surface and the heat dissipation surface on the lower surface of the embedded circuit board.

33. The high-heat dissipation, high-frequency power module according to claim 25, characterized in that, The at least two semiconductor power devices located in the same power conversion bridge arm are located in the same embedded circuit board.

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