Packaging substrate and manufacturing method thereof

Abstract

A packaging substrate and a manufacturing method thereof, the packaging substrate comprises a core layer having at least one through hole connecting two opposite sides of the core layer; a plugging material formed on the opposite sides of the core layer and the wall of the through hole, so that the plugging material on the wall of the through hole forms a through hole corresponding to the through hole; a conductive column formed in the through hole; a wiring layer formed on the plugging material on the opposite sides of the core layer and electrically connected to the conductive column; and a wiring structure formed on the plugging material and the wiring layer on the opposite sides of the core layer and electrically connected to the wiring layer. The present disclosure can greatly reduce manufacturing costs by forming a wiring layer on the plugging material, and can produce a substrate that can meet the high-density wiring structure.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor packaging technology, and more particularly to a packaging substrate that can meet high-density wiring requirements and a manufacturing method thereof. Background Art

[0002] With the rapid development of the electronics industry, electronic products tend to be thinner, lighter, shorter and smaller in shape, and their functions are developing towards high performance, high functionality and high speed. Therefore, in order to meet the needs of high integration and miniaturization of semiconductor devices, packaging substrates with high-density wiring, thinness and low warpage are often used in the packaging process.

[0003] Figures 1A to 1D It is a cross-sectional schematic diagram of a conventional method for manufacturing a packaging substrate 1 .

[0004] like Figure 1A As shown, a core layer 10 is provided, which has a first side 10a and a second side 10b opposite to each other, and a through hole 100 is formed through the core layer 10. A seed layer 11 is formed on the first side 10a and the second side 10b of the core layer 10 and the wall of the through hole 100, and a plugging material 12 is filled in the through hole 100, wherein the plugging material 12 protruding from the surface of the core layer 10 is removed by a flattening process.

[0005] like Figure 1B As shown, a patterning process is performed on two opposite sides of the core layer 10 to form a wiring layer 13 through the seed layer 11 .

[0006] like Figure 1C As shown, a circuit structure 14 is formed on the wiring layer 13 , wherein the circuit structure 14 includes at least one dielectric layer 140 , at least one circuit layer 141 , and at least one conductive blind via 142 disposed in the dielectric layer 140 to electrically connect the circuit layer 141 and the wiring layer 13 .

[0007] like Figure 1D As shown, a solder resist layer 15 such as green paint is formed on the circuit structure 14 .

[0008] However, in the conventional method of manufacturing the package substrate 1, a seed layer 11 is formed on the surface of the core layer 10 (such as glass), and then a patterned wiring layer 13 is formed on the seed layer 11 by a subtractive method (Tenting). Although the surface of the core layer 10 has been flattened, its overall flatness still needs to be improved, and there is a poor adhesion and delamination risk between the wiring layer 13 (such as copper material) and the core layer 10 (such as glass).

[0009] Furthermore, the traditional process of locally forming fine line width / line spacing (L / S) lines is difficult to produce and cannot form a high-density wiring structure as required, making it difficult to produce substrates that match high-density ball grid array (BGA) designs.

[0010] Therefore, how to avoid the various defects of the prior art has become a topic that needs to be solved urgently. Summary of the invention

[0011] An object of the present invention is to provide a packaging substrate and a manufacturing method thereof to solve at least one of the above problems.

[0012] In view of the above-mentioned defects of the prior art, the present disclosure provides a packaging substrate, including: a core layer, having a first side and a second side opposite to each other, and formed with at least one through-hole connecting the first side and the second side; a plugging material formed on the first side and the second side of the core layer and on the wall of the through-hole, so that the plugging material on the wall of the through-hole constitutes a through-hole corresponding to the through-hole; at least one conductive column formed in the through-hole; a wiring layer formed on the plugging material on the first side and the second side of the core layer and electrically connected to the conductive column; and a circuit structure formed on the plugging material and the wiring layer on the first side and the second side of the core layer and electrically connected to the wiring layer.

[0013] The present disclosure also provides a method for manufacturing a packaging substrate, including: providing a core layer having a first side and a second side opposite to each other, and forming at least one through-hole connecting the first side and the second side in the core layer; forming a plugging material on the first side and the second side of the core layer and on the wall of the through-hole, and forming a through-hole corresponding to the through-hole by the plugging material on the wall of the through-hole; forming at least one conductive column in the through-hole; forming a wiring layer on the plugging material on the first side and the second side of the core layer, and making the wiring layer electrically connected to the conductive column; and forming a circuit structure on the plugging material and the wiring layer on the first side and the second side of the core layer, and making the circuit structure electrically connected to the wiring layer.

[0014] In a specific embodiment of the aforementioned packaging substrate and its manufacturing method, a solder mask layer is formed on the circuit structure.

[0015] In a specific embodiment of the aforementioned packaging substrate and its manufacturing method, the material of the core layer is glass, ceramic, silicon carbide (SiC), AlO2, bismaleimide triazine (BT) or a composite material with a modulus of 50 to 100 GPa.

[0016] In a specific embodiment of the aforementioned packaging substrate and the manufacturing method thereof, the thickness of the plugging material formed on the first side and the second side of the core layer and on the through-hole wall is ≥50 μm.

[0017] In a specific embodiment of the aforementioned packaging substrate and the manufacturing method thereof, the plugging material includes an ink material.

[0018] In a specific embodiment of the aforementioned packaging substrate and its manufacturing method, the ink material has a viscosity of 25 to 55 Pa.s, a glass transition temperature (Tg) of 145 to 180°C, and a Young's modulus of ≥3 GPa.

[0019] In a specific embodiment of the aforementioned packaging substrate and the manufacturing method thereof, the ink material is a photosensitive material or a thermosetting material.

[0020] In a specific embodiment of the aforementioned packaging substrate and the method for manufacturing the same, the photosensitive material includes at least one selected from the group consisting of acrylic resin, epoxy acrylic resin, polyester acrylic resin, polyurethane acrylic resin and cationic resin.

[0021] In a specific embodiment of the aforementioned packaging substrate and the method for manufacturing the same, the thermosetting material includes at least one selected from the group consisting of epoxy resin, phenolic resin, polyester resin, polyurethane resin, vinyl ester and polyimide resin.

[0022] In a specific embodiment of the aforementioned packaging substrate and the manufacturing method thereof, the plugging material does not include a dielectric material.

[0023] In a specific embodiment of the aforementioned packaging substrate and its manufacturing method, the dielectric material includes at least one of the group consisting of poly(p-oxadiazole) (PBO), polyimide (PI), prepreg (PP) and ABF (Ajinomoto Build-up Film).

[0024] As can be seen from the above, the present disclosure combines the plugging and the first step of increasing the process into one, which can greatly simplify the process and reduce the production cost. In the package substrate and its manufacturing method disclosed in the present disclosure, by filling the through hole with a plugging material (such as ink) and covering the surface of the core layer at the same time, the wiring layer is formed on the plugging material instead of on the core layer or dielectric material, replacing the existing method of using more expensive dielectric materials such as ABF film as the increase layer material, which can reduce the cost of material consumption.

[0025] Furthermore, the plugging material (ink) is not formed by lamination like traditional dielectric materials, so there is no need to form copper foil on the surface of the plugging material. The wiring layer with fine line width / line spacing (L / S) can be directly formed on the plugging material through the SAP process. In addition, the solidified ink is polished and leveled to ensure good surface flatness, which is conducive to the formation of high-density wiring patterns.

[0026] In addition, due to the excellent adhesion between the plugging ink and the core layer, seed layer and wiring layer (copper material), the risk of delamination or cracks can be reduced, and the stability and reliability of the core layer and wiring layer can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figures 1A to 1D It is a cross-sectional schematic diagram of a conventional method for manufacturing a packaging substrate.

[0028] Figures 2A to 2G It is a cross-sectional schematic diagram of a method for manufacturing a packaging substrate disclosed in the present invention.

[0029] The reference numerals are as follows: 1,2 Package substrate 10,20 Core Layer 10a,20a First side 10b,20b Second side 100,200 Perforation 11,22 Seed layer 12,21 Plug material 13,241 wiring layers 14,25 Line structure 140,250 Dielectric layer 141,251 Line Layer 142,252 Conductive blind vias 15,26 Solder mask 210 Through hole 23 Dry film 230,260 Open 24 Metal Layer 242 Conductive Column 27 Electrical contact pads. DETAILED DESCRIPTION

[0030] The following describes the implementation of the present disclosure by means of specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present disclosure from the contents disclosed in this specification.

[0031] It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of the present disclosure, so they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size, without affecting the effects and purposes that can be achieved by the present disclosure, should still fall within the scope of the technical contents disclosed in the present disclosure. At the same time, the terms such as "on", "first", "second", "one", etc. cited in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present disclosure. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the present disclosure without substantially changing the technical contents.

[0032] Figures 2A to 2GIt is a cross-sectional schematic diagram of a method for manufacturing a packaging substrate 2 disclosed in the present invention.

[0033] like Figure 2A As shown, a core layer 20 is provided, which has a first side 20a and a second side 20b opposite to each other. At least one through hole 200 connecting the first side 20a and the second side 20b is formed in the core layer 20. In this embodiment, a plurality of through holes 200 are formed, and plugging materials 21 are formed on the first side 20a and the second side 20b of the core layer 20 and in the plurality of through holes 200.

[0034] In this embodiment, the core layer 20 is made of a high-hardness dielectric material, such as glass, ceramic, silicon carbide (SiC), AlO2, bismaleimide triazine (BT) or a composite material with high rigidity having a modulus of 50 to 100 GPa. In addition, the through hole 200 can be formed by penetrating the first side 20a and the second side 20b of the core layer 20 by laser burning, hydrofluoric acid (HF) etching, plasma etching, mechanical drilling, etc.

[0035] Furthermore, the plugging material 21 may be an ink material formed by filling methods such as injection, plugging or coating, and the forming method may be adjusted according to the composition and characteristics of the plugging ink material. For example, the paste ink material is filled in the through hole 200 and then solidified. After the ink is solidified, it is polished and leveled with a ceramic roller to remove excess ink protruding from the core layer 20 and to evenly coat the ink on the surfaces of the opposite sides of the core layer 20. In different embodiments, the plugging material 21 may be filled in the through hole 200 and formed on the first side 20a and the second side 20b of the core layer 20 at one time, and then polished and leveled.

[0036] In addition, the ink material has physical properties such as viscosity of 25 to 55 Pa.s, glass transition temperature (Tg) of 145 to 180°C, and Young's modulus ≥ 3 GPa. Furthermore, the ink material can be a photosensitive material or a thermosetting material.

[0037] In a specific embodiment, the ink material is a photosensitive material, such as acrylic resin, epoxy acrylic resin, polyester acrylic resin, polyurethane acrylic resin and cationic resin, etc. The photosensitive materials can be cured under irradiation of 365nm ultraviolet wavelength by a 1000 mJ UV lamp.

[0038] In another specific embodiment, the ink material is a thermosetting material, such as epoxy resin, phenolic resin, polyester resin, polyurethane resin, vinyl ester and polyimide resin, etc. Multiple thermosetting materials can be heated at 180° C. for 2 hours to cross-link and solidify the molecules in the ink material and evaporate the solvent.

[0039] In this embodiment, the plugging material 21 uses ink material to replace the existing dielectric material for filling holes and adding layers, so there is no need to use dielectric materials such as polyparabenzidine (PBO), polyimide (PI), prepreg (PP) and ABF film (Ajinomoto Build-up Film), which can greatly reduce process costs and material consumption.

[0040] like Figure 2B As shown, corresponding to the position of the through hole 200, the plugging material 21 in the through hole 200 is penetrated by laser or mechanical drilling to form at least one through hole 210, such as a double-conical through hole in an hourglass shape, but not limited thereto. Then, a seed layer 22 is formed on the plugging material 21 on opposite sides of the core layer 20 and the wall surface of the through hole 210 by sputtering, chemical plating or other methods, wherein the seed layer 22 can be a metal including copper, manganese-doped copper or ruthenium.

[0041] In this embodiment, the thickness of the plugging material 21 should be maintained above 50 µm. For example, the thickness of the plugging material 21 on the first side 20a and the second side 20b of the core layer 20 and the wall of the through hole 200 is above 50 µm to ensure that it completely covers the opposite sides of the core layer 20 and the wall of the through hole 210.

[0042] like Figure 2C As shown, a dry film 23 having a plurality of openings 230 is formed on the plugging material 21 and the seed layer 22 on the first side 20a and the second side 20b of the core layer 20, and then partially exposed and developed to expose the surface of the seed layer 22.

[0043] like Figure 2D As shown, a metal layer 24 is formed on the seed layer 22 in the through hole 210 and the opening 230 . For example, the metal layer 24 can be made by electroplating, but is not limited thereto. In addition, the metal layer 24 fills up the through hole 210 .

[0044] like Figure 2E As shown, the dry film 23 and the seed layer 22 thereunder are removed to form a wiring layer 241 on the plugging material 21 , and at the same time, the metal layer 24 in the through hole 210 serves as a conductive column 242 .

[0045] In this embodiment, the wiring layer 241 is made of copper. In addition, the conductive pillars 242 can be manufactured together with the wiring layer 241 so that the wiring layer 241 is electrically connected to the conductive pillars 242 .

[0046] like Figure 2F As shown, a patterned circuit build-up operation is performed to form a circuit structure 25 electrically connected to the wiring layer 241 on the plug material 21 and the wiring layer 241 .

[0047] In this embodiment, the circuit structure 25 can adopt the circuit redistribution layer (RDL) specification, such as adopting the build-up process to electroplate metal (such as copper) or other methods. The circuit structure 25 includes at least one dielectric layer 250 formed on the plug material 21, at least one circuit layer 251 formed on the dielectric layer 250, and at least one conductive blind hole 252 provided in the dielectric layer 250 to electrically connect the circuit layer 251 and the wiring layer 241.

[0048] Furthermore, the dielectric layer 250 may be made of dielectric materials such as poly(p-oxadiazole) (PBO), polyimide (PI), prepreg (PP), and ABF (Ajinomoto Build-up Film), which are different from the material of the plugging material 21 .

[0049] like Figure 2G As shown, printing, painting, exposure, development and curing processes are performed to form a solder mask layer 26 on the circuit structure 25.

[0050] In this embodiment, a portion of the surface of the circuit layer 251 is exposed from the solder mask layer 26 to serve as an electrical contact pad 27. For example, a plurality of openings 260 are formed on the solder mask layer 26 to expose the circuit layer 251.

[0051] The present disclosure also provides a packaging substrate 2 , including: a core layer 20 , a plug material 21 , at least one conductive column 242 , a wiring layer 241 and a circuit structure 25 .

[0052] The core layer 20 has a first side 20 a and a second side 20 b opposite to each other, and is formed with at least one through hole 200 connecting the first side 20 a and the second side 20 b.

[0053] The plugging material 21 is formed on the first side 20 a and the second side 20 b of the core layer 20 and the wall surface of the through hole 200 , so that the plugging material 21 on the wall surface of the through hole 200 forms a through hole 210 corresponding to the through hole 200 .

[0054] The conductive pillar 242 is formed in the through hole 210 .

[0055] The wiring layer 241 is formed on the plugging material 21 on the first side 20 a and the second side 20 b of the core layer 20 , and is electrically connected to the conductive pillar 242 .

[0056] The circuit structure 25 is formed on the plug material 21 and the wiring layer 241 on the first side 20 a and the second side 20 b of the core layer 20 , and is electrically connected to the wiring layer 241 .

[0057] In one embodiment, the package substrate 2 further includes a solder mask layer 26 formed on the circuit structure 25 .

[0058] In one embodiment, the core layer 20 is made of glass, ceramic, silicon carbide (SiC), AlO 2 , bismaleimide triazine (BT) or a composite material with a modulus of 50 to 100 GPa.

[0059] In one embodiment, the thickness of the plugging material 21 formed on the first side 20 a and the second side 20 b of the core layer 20 and the wall surface of the through hole 200 is ≥50 μm.

[0060] In one embodiment, the plugging material 21 includes ink material.

[0061] In one embodiment, the ink material has a viscosity of 25 to 55 Pa•s, a glass transition temperature (Tg) of 145 to 180° C., and a Young's modulus of ≥3 GPa.

[0062] In one embodiment, the ink material is a photosensitive material or a thermosetting material.

[0063] In one embodiment, the photosensitive material includes at least one selected from the group consisting of acrylic resin, epoxy acrylic resin, polyester acrylic resin, polyurethane acrylic resin and cationic resin.

[0064] In one embodiment, the thermosetting material includes at least one selected from the group consisting of epoxy resin, phenolic resin, polyester resin, polyurethane resin, vinyl ester and polyimide resin.

[0065] In one embodiment, the plugging material 21 does not include a dielectric material.

[0066] In one embodiment, the dielectric material includes at least one of the group consisting of poly(p-oxadiazole) (PBO), polyimide (PI), prepreg (PP) and ABF (Ajinomoto Build-up Film).

[0067] In summary, the package substrate and its manufacturing method disclosed in the present invention can greatly simplify the process and reduce the manufacturing cost mainly by combining the plugging and the first step of increasing the process into one. In the step of forming the plugging material, such as filling the ink, in addition to filling the through hole, the surface of the core layer is covered with the plugging ink, so that the wiring layer is formed on the plugging material instead of the core layer or the dielectric material, eliminating the step of using a relatively expensive dielectric material such as ABF film as the increase layer material, which can reduce the cost of consumables.

[0068] Furthermore, the plugging material (ink) is not formed by lamination like traditional dielectric materials, so there is no need to form copper foil on the surface of the plugging material. During the patterning step, a wiring layer with fine line width / line spacing (L / S) can be directly formed on the plugging material through the SAP process. In addition, the solidified ink is polished and leveled to ensure good surface flatness, which is conducive to the formation of high-density wiring patterns.

[0069] In addition, due to the excellent adhesion between the plugging ink and the core layer, seed layer and wiring layer (copper material), the risk of delamination or core layer cracks can be reduced, and the stability and reliability of the core layer and wiring layer can be improved.

[0070] The above embodiments are only used to illustrate the principles and effects of the present disclosure, and are not used to limit the present disclosure. Those skilled in the art may modify the above embodiments without violating the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure should be as listed in the claims.

Claims

1. A packaging substrate, characterized in that: include: The core layer has a first side and a second side opposite to each other and is formed with at least one through hole connecting the first side and the second side; A plugging material is formed on the first side and the second side of the core layer and on the wall surface of the through hole, so that the plugging material on the wall surface of the through hole forms a through hole corresponding to the through hole; At least one conductive pillar formed in the through hole; A wiring layer formed on the plugging material on the first side and the second side of the core layer and electrically connected to the conductive pillar; and The circuit structure is formed on the plugging material and the wiring layer on the first side and the second side of the core layer, and is electrically connected to the wiring layer.

2. The packaging substrate according to claim 1, wherein: The packaging substrate also includes a solder mask formed on the circuit structure.

3. The packaging substrate according to claim 1, wherein: The core layer is made of glass, ceramic, silicon carbide, AlO2, bismaleimide triazine or a composite material with a modulus of 50 to 100 GPa.

4. The packaging substrate according to claim 1, wherein: The plugging material formed on the first side and the second side of the core layer and on the through-hole wall has a thickness of ≥50 μm.

5. The packaging substrate according to claim 1, wherein: The plugging material includes ink material.

6. The packaging substrate according to claim 5, characterized in that The ink material has a viscosity of 25 to 55 Pa·s, a glass transition temperature of 145 to 180°C, and a Young's modulus of ≥3 GPa.

7. The packaging substrate according to claim 5, characterized in that The ink material is a photosensitive material or a thermosetting material.

8. The packaging substrate according to claim 7, wherein: The photosensitive material includes at least one selected from the group consisting of acrylic resin, epoxy acrylic resin, polyester acrylic resin, polyurethane acrylic resin and cationic resin.

9. The packaging substrate according to claim 7, wherein: The thermosetting material includes at least one selected from the group consisting of epoxy resin, phenolic resin, polyester resin, polyurethane resin, vinyl ester and polyimide resin.

10. The packaging substrate according to claim 1, wherein: The plugging material does not include at least one dielectric material selected from the group consisting of poly(p-oxadiazole benzene), polyimide, prepreg and ABF film.

11. A method for manufacturing a packaging substrate, characterized in that: include: Providing a core layer having a first side and a second side opposite to each other, and forming at least one through hole in the core layer connecting the first side and the second side; Forming plugging materials on the first side and the second side of the core layer and on the wall surface of the through hole, and forming a through hole corresponding to the through hole by the plugging materials on the wall surface of the through hole; forming at least one conductive pillar in the through hole; Forming a wiring layer on the plugging material on the first side and the second side of the core layer, and making the wiring layer electrically connected to the conductive column; as well as A circuit structure is formed on the plugging material and the wiring layer on the first side and the second side of the core layer, and the circuit structure is electrically connected to the wiring layer.

12. The method for manufacturing a packaging substrate according to claim 11, wherein: The manufacturing method also includes forming a solder resist layer on the circuit structure.

13. The method for manufacturing a packaging substrate according to claim 11, wherein: The core layer is made of glass, ceramic, silicon carbide, AlO2, bismaleimide triazine or a composite material with a modulus of 50 to 100 GPa.

14. The method for manufacturing a packaging substrate according to claim 11, wherein: The thickness of the plugging material is ≥50 µm.

15. The method for manufacturing a packaging substrate according to claim 11, wherein: The plugging material includes ink material.

16. The method for manufacturing a packaging substrate according to claim 15, wherein: The ink material has a viscosity of 25 to 55 Pa·s, a glass transition temperature of 145 to 180°C, and a Young's modulus of ≥3 GPa.

17. The method for manufacturing a packaging substrate according to claim 15, wherein: The ink material is a photosensitive material or a thermosetting material.

18. The method for manufacturing a packaging substrate according to claim 17, wherein: The photosensitive material includes at least one selected from the group consisting of acrylic resin, epoxy acrylic resin, polyester acrylic resin, polyurethane acrylic resin and cationic resin.

19. The method for manufacturing a packaging substrate according to claim 17, wherein: The thermosetting material includes at least one selected from the group consisting of epoxy resin, phenolic resin, polyester resin, polyurethane resin, vinyl ester and polyimide resin.

20. The method for manufacturing a packaging substrate according to claim 11, wherein: The step of forming the plugging material includes forming the plugging material on the first side and the second side of the core layer and filling the through hole with the plugging material; and penetrating the plugging material in the through hole to form a through hole corresponding to the through hole by the plugging material on the wall surface of the through hole.

21. The method for manufacturing a packaging substrate according to claim 11, wherein: The plugging material does not include at least one dielectric material selected from the group consisting of poly(p-oxadiazole benzene), polyimide, prepreg and ABF film.

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