Electronic device and method for manufacturing electronic device

Abstract

The present invention provides an electronic device, comprising a substrate, a circuit layer, a filter layer, an organic insulating layer, and a transparent conductive layer. The circuit layer is arranged on the substrate. The filter layer is arranged on the circuit layer and has a first through hole. The organic insulating layer is arranged on the filter layer and has a second through hole, wherein the second through hole corresponds to the first through hole. The transparent conductive layer is electrically connected to the circuit layer through the first through hole and the second through hole. The first through hole has a first side wall, the second through hole has a second side wall, the first side wall and the second side wall are discontinuous, and the width of the first through hole is smaller than the width of the second through hole.

Description

Technical Field

[0001] The present invention relates to an electronic device and a method for manufacturing the electronic device, and in particular to an electronic device comprising a filter layer and a method for manufacturing the electronic device. Background Art

[0002] In existing display devices, since light will cause color mixing when it passes through the boundary area of ​​the filter layer at a side angle and enters the user's eyes, a light shielding structure (such as a black matrix layer) is provided in the boundary area of ​​the filter layer to prevent the mixed light from being observed by the user. However, this will lead to a decrease in the pixel aperture ratio, thereby reducing the display quality. Therefore, how to increase the pixel aperture ratio or improve the display quality of the display device is still an important issue in the art. Summary of the invention

[0003] The object of the present invention is to provide an electronic device and a method for manufacturing the electronic device.

[0004] The present invention provides an electronic device, comprising a substrate, a circuit layer, a filter layer, an organic insulating layer, and a transparent conductive layer. The circuit layer is arranged on the substrate. The filter layer is arranged on the circuit layer and has a first through hole. The organic insulating layer is arranged on the filter layer and has a second through hole, wherein the second through hole corresponds to the first through hole. The transparent conductive layer is electrically connected to the circuit layer through the first through hole and the second through hole. The first through hole has a first side wall, the second through hole has a second side wall, the first side wall and the second side wall are discontinuous, and the width of the first through hole is smaller than the width of the second through hole.

[0005] The present invention also provides a method for manufacturing an electronic device, comprising providing a substrate, forming a circuit layer on the substrate, forming a filter layer on the circuit layer, forming an organic insulating layer on the filter layer, forming a first through hole in the organic insulating layer, forming a second through hole in the filter layer, wherein the second through hole corresponds to the first through hole, and forming a transparent conductive layer, wherein the transparent conductive layer is electrically connected to the circuit layer through the first through hole and the second through hole. The first through hole has a first side wall, the second through hole has a second side wall, the first side wall and the second side wall are discontinuous, and the width of the second through hole is smaller than the width of the first through hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 FIG. 1 is a partial cross-sectional schematic diagram of an electronic device according to a first embodiment of the present invention.

[0007] Figure 2 FIG. 1 is a partial top view of a driving element of an electronic device according to a first embodiment of the present invention.

[0008] Figure 3 It is a schematic top view of a filter layer according to a variation of the first embodiment of the present invention.

[0009] Figure 4 FIG. 4 is a schematic top view of a filter layer according to another variation of the first embodiment of the present invention.

[0010] Figure 5 FIG. 4 is a schematic top view of a filter layer according to another variation of the first embodiment of the present invention.

[0011] Figure 6 FIG. 1 is a partial cross-sectional diagram of an electronic device according to a first embodiment of the present invention.

[0012] Figure 7 FIG. 1 is a partial top view of a driving element of an electronic device according to a second embodiment of the present invention.

[0013] Figure 8 Schematic diagram of the process of manufacturing an electronic device according to three embodiments of the present invention.

[0014] Fig. 9 , Fig.10 , Fig.11 FIG. 4 is a flowchart of manufacturing an electronic device according to three embodiments of the present invention.

[0015] Explanation of reference numerals: 100-display device; BF-buffer layer; BM-shielding layer; CFL-filter layer; CL-circuit layer; CP1-first filter element; CP2-second filter element; CP3-third filter element; CR, CR2-channel region; DL, DL2-data line; DOE, DOE2-drain electrode; DR, DR2-drain region; DU, DU2-driving unit; E1, E2-end point; ED, ED2, ED3-electronic device; GE, GE2-gate electrode; GL, GL2-scanning line; IL1, IL2, IL3, IN, IL4, IL5, IL6, IL7, IL8, IL9-insulating layer; L S-light-shielding layer; M1, M2, M3, M4, M5, M6, M7-conductive layer; M100-manufacturing method; OIL-organic insulating layer; R1-region; S1, S2, S3-part; S100, S102, S104, S106, S108, S110, S112-step; SB-substrate; SF1-upper surface; SM, SM2-semiconductor layer; SOE, SOE2-source electrode; SR, SR2-source region; SW1, SW2-sidewall; TCL-transparent conductive layer; V1, V2-perforation; VH1, VH2-through hole; W1, W2-width; X, Y, Z-direction; A-A', B-B'-tangent. DETAILED DESCRIPTION

[0016] The present invention can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to make it easier for readers to understand and for the simplicity of the drawings, the multiple drawings in the present invention only depict a portion of the device, and specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the figure are only for illustration and are not intended to limit the scope of the present invention.

[0017] Certain words are used throughout the specification and the appended claims to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. The present invention is not intended to distinguish between components that have the same function but different names.

[0018] In the present specification and claims, the words “including” and “comprising” are open-ended words, and thus should be interpreted as meaning “including but not limited to…”.

[0019] It should be understood that when an element or a film layer is referred to as being "disposed on" or "connected to" another element or film layer, it may be directly on or directly connected to this other element or film layer, or there may be an intervening element or film layer between the two (indirect case). Conversely, when an element is referred to as being "directly on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two. When an element or a film layer is referred to as being "electrically connected" to another element or film layer, it may be interpreted as a direct electrical connection or an indirect electrical connection. The electrical connection or coupling described in the present invention may refer to a direct connection or an indirect connection. In the case of a direct connection, the endpoints of the components on the two circuits are directly connected or connected to each other by a conductor segment, and in the case of an indirect connection, there is a switch, a diode, a capacitor, an inductor, a resistor, other suitable components, or a combination of the above components between the endpoints of the components on the two circuits, but is not limited thereto.

[0020] Although the terms "first", "second", "third" ... can be used to describe a variety of components, the components are not limited to these terms. These terms are only used to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but may be replaced by first, second, third ... according to the order of the components declared in the claims. Therefore, in the following description, the first component may be the second component in the claims.

[0021] In the present invention, the thickness, length and width may be measured by an optical microscope, and the thickness or width may be measured by a cross-sectional image in an electron microscope, but the present invention is not limited thereto.

[0022] In addition, any two values ​​or directions used for comparison may have a certain error. The terms "approximately", "equal to", "equal to" or "same", "substantially" or "substantially" are generally interpreted as being within a range of plus or minus 20% of the given value, or within a range of plus or minus 10%, plus or minus 5%, plus or minus 3%, plus or minus 2%, plus or minus 1% or plus or minus 0.5% of the given value.

[0023] In addition, the phrases “a given range is from a first value to a second value” and “a given range falls within the range from a first value to a second value” mean that the given range includes the first value, the second value and other values ​​therebetween.

[0024] If the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

[0025] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings as commonly understood by those skilled in the art to which the present invention belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present invention, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present invention.

[0026] It should be noted that the following embodiments may be implemented by replacing, reorganizing, or mixing the technical features in several different embodiments without departing from the spirit of the present invention to complete other embodiments.

[0027] The electronic device of the present invention may include a packaging device, a display device, a sensing device, a backlight device, an antenna device, a splicing device, a power management device, a wearable device (for example, including augmented reality or virtual reality), other suitable electronic devices or any suitable device applied to the above devices, but not limited thereto. The electronic device may be a bendable, flexible or stretchable electronic device. The display device may include a non-self-luminous display device or a self-luminous display device. Non-self-luminous display devices include, for example, liquid crystal display devices, but not limited thereto. Self-luminous display devices include, for example, light-emitting diode display devices, but not limited thereto. The display device may be applied to, for example, a notebook computer, a public display, a splicing display, a car display, a touch display, a television, a monitor, a smart phone, a tablet computer, a light source module, a lighting device or, for example, an electronic device applied to the above products, but not limited thereto. The sensing device may include a biosensor, a touch sensor, a fingerprint sensor, other suitable sensors or a combination of the above types of sensors. The antenna device may be a liquid crystal type antenna device or a non-liquid crystal type antenna device, for example, including a liquid crystal antenna device, but not limited thereto. The splicing device may include, for example, a display splicing device or an antenna splicing device, but is not limited thereto. The appearance of the electronic device may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shapes. The electronic device may include an electronic unit, wherein the electronic unit may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, sensors, etc. The diode may include a light emitting diode or a photodiode. The light emitting diode may include, for example, an organic light emitting diode (OLED) or an inorganic light emitting diode (in-organic light emitting diode), and the inorganic light emitting diode may include, for example, a sub-millimeter light emitting diode (mini LED), a micro LED (micro LED) or a quantum dot light emitting diode (quantumdot LED), but is not limited thereto. It should be noted that the electronic device of the present invention may be various combinations of the above devices, but is not limited thereto. The electronic device may have peripheral systems such as a drive system, a control system, a light source system, etc. to support a display device, an antenna device, a wearable device (such as including augmented reality or virtual reality), a vehicle-mounted device (such as including a car windshield), or a splicing device.

[0028] Please refer to Figure 1 and Figure 2 , Figure 1 is a partial cross-sectional schematic diagram of an electronic device according to a first embodiment of the present invention, Figure 2Schematic diagram of a partial top view of a driving element of an electronic device of the first embodiment of the present invention. According to this embodiment, the electronic device ED may include a substrate SB, a circuit layer CL disposed on the substrate SB, a filter layer CFL disposed on the circuit layer CL, an organic insulating layer OIL disposed on the filter layer CFL, and a transparent conductive layer TCL disposed on the organic insulating layer OIL, but not limited thereto. The electronic device ED of this embodiment may include a display device 100 for displaying an image, but not limited thereto. It should be noted that Figure 1 Only a partial structure of the electronic device ED is shown, and the electronic device ED may also include other elements and / or film layers in addition to the above elements and film layers. The structures of the elements and film layers of the electronic device ED will be described in detail below.

[0029] The substrate SB can be used to support the components and film layers thereon. The substrate SB can include a hard material or a flexible material. Examples of hard materials include glass, quartz, sapphire, ceramics, other suitable materials, or a combination of the above materials. Examples of flexible materials include polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), other suitable materials, or a combination of the above materials. It should be noted that although Figure 1 The substrate SB shown is a single-layer structure, but the present embodiment is not limited thereto. In some embodiments, the substrate SB may include a multi-layer structure.

[0030] The circuit layer CL may include various wires, circuits, and electronic units applicable to the electronic device ED. The electronic unit may include any suitable active component and / or passive component. In this embodiment, the circuit layer CL may include any suitable structure formed by stacking a conductive layer and an insulating layer, wherein the conductive layer may be used to form the above-mentioned wires, circuits, or electronic units. For example, Figure 1 As shown, the circuit layer CL of this embodiment may include a semiconductor layer SM disposed on a substrate SB, an insulating layer IL1 disposed on and covering the semiconductor layer SM, a conductive layer M1 disposed on the insulating layer IL1, an insulating layer IL2 disposed on and covering the conductive layer M1, a conductive layer M2 disposed on the insulating layer IL2, an insulating layer IL3 disposed on and covering the conductive layer M2, and a conductive layer M3 disposed on the insulating layer IL3, but the present invention is not limited thereto. In other embodiments, the circuit layer CL may include any suitable structure according to the design of the electronic device ED.

[0031] like Figure 1As shown, the circuit layer CL of the present embodiment may include a driving unit DU. In some embodiments, the circuit layer CL may also include other electronic components besides the driving unit DU, such as a switching component. The driving unit DU may, for example, include a thin film transistor (TFT) component, but is not limited thereto. In the present embodiment, the driving unit DU may include a semiconductor layer SM, a gate electrode GE, a source electrode SOE, and a drain electrode DOE, wherein the gate electrode GE may be formed by a conductive layer M1, and the source electrode SOE and the drain electrode DOE may be formed by a conductive layer M2, but is not limited thereto. In other words, the driving unit DU may be a top gate thin film transistor (top gate TFT). In this case, the insulating layer IL1 may serve as a gate insulating layer. It should be noted that the structure or type of the driving unit DU is not limited thereto. Figure 1 In other embodiments, the driving element DU may include a bottom gate thin film transistor (bottom gate TFT), a dual gate thin film transistor (dual gate TFT), other suitable elements or a combination of the above elements.

[0032] Please refer to Figure 2 , to make the diagram simple and clear, Figure 2 Only the substrate SB, the semiconductor layer SM, the conductive layer M1 and the conductive layer M2 are shown. Figure 2 As shown, the electronic device ED may include at least one data line DL and at least one scan line GL disposed on the substrate SB. The scan line GL may extend along a first direction, and the data line DL may extend along a second direction, wherein the first direction is not parallel to the second direction. For example, the first direction may be direction X, and the second direction may be direction Y, i.e., the first direction is perpendicular to the second direction, but not limited thereto. In other embodiments, the first direction may not be perpendicular to the second direction. The gate electrode GE of the driving unit DU may be a part of the scan line GL, i.e., the gate electrode GE is electrically connected to the scan line GL; the source electrode SOE of the driving unit DU may be a part of the data line DL, i.e., the source electrode SOE is electrically connected to the data line DL. Therefore, the scan line GL may be formed by the conductive layer M1, and the data line DL may be formed by the conductive layer M2, but not limited thereto.

[0033] In this embodiment, if Figure 2As shown, in the top view direction of the electronic device ED (for example, parallel to the direction Z), the semiconductor layer SM of the driving unit DU may have a U-shaped pattern. The semiconductor layer SM may include a portion S1, a portion S2, and a portion S3 connected between the portion S1 and the portion S2. The portion S1 and the portion S2 are two portions parallel to each other in the U-shaped pattern, and the extension direction of the portion S3 is perpendicular to the extension direction of the portion S1 and the portion S2. In detail, the portion S1 and the portion S2 may extend substantially along the extension direction parallel to the data line DL (i.e., direction Y). In addition, the data line DL may overlap the portion S1 of the semiconductor layer SM. The portion S3 may extend substantially along the extension direction parallel to the scan line GL (i.e., direction X). The portion S1 and the portion S2 are connected to the upper side of the portion S3 at both ends of the portion S3, respectively. According to this embodiment, the semiconductor layer SM may include a channel region CR corresponding to the gate electrode GE. Specifically, in the top view direction of the electronic device ED, the scan line GL may extend along the direction X and pass through the portion S1 and the portion S2 of the semiconductor layer SM. In this case, the portions of the scan line GL respectively overlapping the portion S1 and the portion S2 can be used as the gate electrode GE, and the portions of the portion S1 and the portion S2 corresponding to the scan line GL can be respectively regarded as the channel region CR of the semiconductor layer SM. In other words, the driving unit DU of the present embodiment includes two gate electrodes GE, and the semiconductor layer SM of the driving unit DU includes the channel regions CR corresponding to the two gate electrodes GE. Figure 2 The drive unit DU shown is Figure 1 The drive unit DU shown is a cross-sectional structure along the tangent line AA'. Figure 2 It can be seen from the figure that the drive unit DU includes two gate electrodes GE and two channel regions CR. It should be noted that a scan line GL can pass through the semiconductor layers SM of multiple drive units DU at the same time. Figure 2 The circuit layer CL of the electronic device ED may include a plurality of driving units DU. The semiconductor layer SM may also include a source region SR and a drain region DR, wherein the source electrode SOE may be electrically connected to the source region SR, and the drain electrode DOE ( Figure 2 The source region SR and the drain region DR may be located at two ends of the semiconductor layer SM, respectively. The source region SR is located in the portion S1, for example, and the drain region DR is located in the portion S2, for example. Figure 1 , the electronic device ED may include a through hole V1, wherein the through hole V1 may be formed by removing portions of the insulating layer IL1 and the insulating layer IL2, and may expose the source region SR and the drain region DR of the semiconductor layer SM. In addition, the through hole V1 may extend along the direction X and pass through the portion S1 and the portion S2 of the semiconductor layer SM, that is, by Figure 2The insulating layer IL1 and the insulating layer IL2 within the range of the through hole V1 are partially removed to form the through hole V1. The data line DL can be filled in the through hole V1 overlapping with the portion S1 of the semiconductor layer SM and contacting the source region SR, thereby forming a source electrode SOE and being electrically connected to the source region SR. The conductive layer M2 can be filled in the through hole V1 overlapping with the portion S2 of the semiconductor layer SM and contacting the drain region DR, thereby forming a drain electrode DOE ( Figure 2 It should be noted that the data line DL and the through hole V1 may extend through a plurality of semiconductor layers SM and are not limited to the plurality of semiconductor layers SM. Figure 2 In addition, the semiconductor layer SM of the present embodiment may further include a region R1, wherein the region R1 is connected between two channel regions CR of the semiconductor layer SM. In other words, one of the channel regions CR of the semiconductor layer SM may be connected between the source region SR and the region R1, and the other of the channel regions CR of the semiconductor layer SM may be connected between the drain region DR and the region R1. In the present embodiment, the channel region CR may be an undoped region, the source region SR and the drain region DR may be heavily doped regions, and the region R1 may be a lightly doped region, but not limited thereto. In a variant embodiment, the region R1 may also be a heavily doped region. In the present embodiment, the material of the semiconductor layer SM may include (but not limited to) low temperature polysilicon (LTPS), amorphous silicon, metal oxide (such as indium gallium zinc oxide (IGZO)), other suitable materials or a combination of the above materials, and the conductive layer (i.e., the conductive layer M1 and the conductive layer M2) forming the gate electrode GE, the source electrode SOE and the drain electrode DOE may include a metal material, but not limited thereto. In other embodiments, the semiconductor layer SM may be made of other suitable materials according to the design requirements of the electronic device ED. In addition, the insulating layer IL1 , the insulating layer IL2 , and the insulating layer IL3 may include any suitable insulating material, such as an inorganic insulating material, but not limited thereto.

[0034] In some embodiments, the circuit layer CL may selectively include a buffer layer BF disposed on the substrate SB, wherein the buffer layer BF is disposed between the substrate SB and the semiconductor layer SM. The buffer layer BF may include any suitable insulating material. In some embodiments, the circuit layer CL may selectively include a light shielding layer LS, wherein the light shielding layer LS is disposed between the substrate SB and the semiconductor layer SM. When the electronic device ED includes the buffer layer BF, the light shielding layer LS may be disposed between the buffer layer BF and the substrate SB, but is not limited thereto. The light shielding layer LS may include any suitable light-blocking material, such as a metal material, to reduce the influence of external ambient light on the driving unit DU. The light shielding layer LS may be disposed corresponding to the driving unit DU, or at least corresponding to the semiconductor layer SM (or the channel region CR of the semiconductor layer SM) of the driving unit DU. In some embodiments, the light shielding layer LS may be a patterned film layer corresponding to the semiconductor layer SM of the driving unit DU.

[0035] According to the present embodiment, the transparent conductive layer TCL may be electrically connected to the driving unit DU, for example, electrically connected to the drain electrode DOE of the driving unit DU. In detail, the transparent conductive layer TCL disposed on the organic insulating layer OIL may be electrically connected to the conductive layer M3 of the circuit layer CL through the through hole VH1 and the through hole VH2 (details are described below), and the conductive layer M3 may be electrically connected to the drain electrode DOE through the through hole V2 passing through the insulating layer IL3. In this way, the transparent conductive layer TCL may be electrically connected to the driving unit DU. The material of the conductive layer M3 may refer to the materials of the conductive layer M1 and the conductive layer M2 described above. In some embodiments, the circuit layer CL may not include the conductive layer M3, and the transparent conductive layer TCL may be directly electrically connected to the drain electrode DOE. In one embodiment, the electronic device ED may include a non-self-luminous display device, and the transparent conductive layer TCL may be a pixel electrode. In this case, although Figure 1 Not shown, the electronic device ED may also include a display medium layer disposed on the transparent conductive layer TCL and a backlight module disposed on the side of the substrate SB opposite to the circuit layer CL, and the drive unit DU may control the display medium layer through the transparent conductive layer TCL to display a picture or image. In addition, the electronic device ED may also include a pair of opposing substrates, and the display medium layer may be disposed between the substrate SB and the opposing substrate. The display medium layer may include, for example, liquid crystal, but is not limited thereto. In other embodiments, the drive unit DU may be electrically connected to any suitable electronic unit in the electronic device ED as a driving element, depending on the design of the electronic device ED.

[0036] According to this embodiment, the filter layer CFL may be directly disposed on the circuit layer CL. Figure 1As shown, the filter layer CFL can be directly disposed on the insulating layer IL3 and cover the conductive layer M3. In other words, the electronic device ED of the present embodiment can be formed by a color filter on array (COA) process. The filter layer CFL may include any element or film layer that allows light of a specific wavelength or color to pass through, such as a color filter, but not limited thereto. In the present embodiment, the filter layer CFL may include a plurality of filter elements, wherein the plurality of filter elements can allow light of different wavelengths or colors to pass through. For example, Figures 3 to 5 As shown, the filter layer CFL may include a first filter element CP1, a second filter element CP2, and a third filter element CP3, which respectively allow red light, green light, and blue light to pass through, and can mix to produce white light, but the present invention is not limited thereto. In this case, the first filter element CP1, the second filter element CP2, and the third filter element CP3 may respectively correspond to a sub-pixel, and the three sub-pixels may be combined into a pixel. Figure 1 The first filter element CP1 and a part of the second filter element CP2 are shown exemplarily, but the third filter element CP3 is not shown. Figures 3 to 5 Only one group of first filter elements CP1, second filter elements CP2 and third filter elements CP3 is shown as an example, and the electronic device ED may include multiple groups of first filter elements CP1, second filter elements CP2 and third filter elements CP3 arranged on the circuit layer CL, that is, the filter layer CFL may be composed of multiple groups of first filter elements CP1, second filter elements CP2 and third filter elements CP3. In addition, the design of the filter layer CFL of the present invention is not limited to the above content, but can be determined according to the design requirements of the electronic device ED. In other embodiments, the pixel arrangement method can be sub-pixel rendering (Sub-Pixel Rendering), not based on Figure 3 For example, in the top view direction of the electronic device ED, the filter layer CFL above the through hole VH1 from left to right (i.e., the first filter element CP1, the second filter element CP2, and the third filter element CP3 in sequence) can allow red light, green light, and blue light to pass through, and the filter layer CFL below the through hole VH1 from left to right can allow blue light, red light, and green light to pass through, but the present invention is not limited thereto.

[0037] The electronic device ED of this embodiment may further include a light shielding layer BM disposed on the circuit layer CL, wherein the light shielding layer BM may be disposed between adjacent filter elements. Figure 1As shown, the shading layer BM may be disposed between the adjacent first filter element CP1 and the second filter element CP2. Specifically, the shading layer BM may have a matrix structure and include a plurality of openings, and the filter elements may be disposed corresponding to the plurality of openings of the shading layer BM. The shading layer BM may include any suitable shading material, such as an opaque inorganic material or organic material, a black resin, a low-reflection metal material, metal-molybdenum oxide doped tantalum (MoOxTa), metal-nitride oxide, or a combination thereof, but not limited thereto. The low-reflection metal material may, for example, include aluminum, molybdenum, titanium, the above-mentioned oxides, the above-mentioned nitrides, molybdenum oxide doped tantalum, other suitable materials, or a combination of at least two of the above-mentioned materials. By providing the shading layer BM, the possibility of the user observing light color mixing and affecting the display quality can be reduced.

[0038] According to this embodiment, the filter layer CFL may have a through hole VH1, wherein the through hole VH1 may be formed by removing a portion of the filter layer CFL. The through hole VH1 may be disposed in the filter elements (e.g., the first filter element CP1, the second filter element CP2, and the third filter element CP3) of the filter layer CFL, and may penetrate the filter elements. Figure 1 As shown, the first filter element CP1 of the filter layer CFL may have at least one through hole VH1, which penetrates the first filter element CP1 and may expose the conductive layer M3 electrically connected to the drain electrode DOE of the driving unit DU. In other words, at least a portion of the first filter element CP1 corresponding to the conductive layer M3 electrically connected to the driving unit DU may be removed to form the through hole VH1, that is, the setting position of the through hole VH1 corresponds to the position of the conductive layer M3 electrically connected to the driving unit DU. In this way, the transparent conductive layer TCL disposed on the filter layer CFL may extend into the through hole VH1 and contact the conductive layer M3, thereby being electrically connected to the driving unit DU. In some embodiments, when the electronic device ED does not include the conductive layer M3, the transparent conductive layer TCL may directly contact the drain electrode DOE of the driving unit DU through the through hole VH1 (and the above-mentioned through hole V2).

[0039] It should be noted that the through hole VH1 may also be disposed in other filter elements of the filter layer CFL, and is not limited to the first filter element CP1. Figure 1The structure in which the first filter element CP1 includes the through hole VH1 is shown only as an example. For example, each filter element of the filter layer CFL may include at least one through hole VH1, but the present invention is not limited thereto. In this case, the electronic device ED may include a transparent conductive layer TCL disposed on the second filter element CP2 (or the third filter element CP3) and a driving unit DU electrically connected to the transparent conductive layer TCL, and the through hole VH1 in the second filter element CP2 (or the third filter element CP3) may expose the conductive layer M3 electrically connected to the driving unit DU (for example, the drain electrode DOE), so that the transparent conductive layer TCL may be electrically connected to the driving unit DU through the through hole VH1.

[0040] In this embodiment, the organic insulating layer OIL may be directly disposed on the filter layer CL and may cover the filter layer CL, that is, the organic insulating layer OIL may contact the filter layer CL. In this way, the organic insulating layer OIL may provide a protective effect for the components or film layers thereunder, such as the driving unit DU. In addition, the organic insulating layer OIL may provide a flat upper surface to facilitate the arrangement of other components or film layers thereon, such as the transparent conductive layer TCL. The organic insulating layer OIL may include any suitable organic insulating material.

[0041] According to the present embodiment, the organic insulating layer OIL may have a through hole VH2, wherein the through hole VH2 may be formed by removing a portion of the organic insulating layer OIL. The through hole VH2 may correspond to the through hole VH1, that is, the through hole VH2 may at least partially overlap the through hole VH1 in the top view direction of the electronic device ED. The through hole VH2 may be located on the through hole VH1. For example, the organic insulating layer OIL may have a through hole VH2 corresponding to the through hole VH1 of the filter layer CFL (for example, the first filter element CP1, but not limited thereto). In this way, the conductive layer M3 electrically connected to the driving unit DU may be exposed by the through hole VH1 and the through hole VH2. By making the filter layer CFL include the through hole VH1, and making the organic insulating layer OIL include the through hole VH2 corresponding to the through hole VH1, the transparent conductive layer TCL may extend into a through hole VH1 and a through hole VH2 corresponding to the through hole VH1 and contact the conductive layer M3 electrically connected to the driving unit DU. In other words, the transparent conductive layer TCL can be electrically connected to the circuit layer CL through the through hole VH1 and the through hole VH2, or in other words, electrically connected to the driving unit DU in the circuit layer CL. Figure 1 Not shown, the organic insulating layer OIL may include through holes VH2 corresponding to through holes VH1 of other filter elements (eg, the second filter element CP2 and the third filter element CP3), that is, the electronic device ED may include multiple groups of through hole structures formed by through holes VH1 and through holes VH2 corresponding to each other.

[0042] According to this embodiment, Figure 1As shown, the through hole VH1 of the filter layer CFL (or the first filter element CP1 of the filter layer CFL) has a side wall SW1, and the through hole VH2 of the organic insulating layer OIL corresponding to the through hole VH1 has a side wall SW2, wherein the side wall SW1 and the side wall SW2 are discontinuous. In short, in a group of through holes VH1 and through holes VH2 corresponding to each other, the side wall of the through hole VH1 and the side wall of the through hole VH2 are discontinuous. The above-mentioned "side wall SW1 and side wall SW2 are discontinuous" may include any suitable situation in which, in a cross-sectional view of the electronic device ED, one end of the side wall SW1 adjacent to the side wall SW2 is not connected to the other end of the side wall SW2 adjacent to the side wall SW1. Specifically, in a cross-sectional view of the electronic device ED (for example Figure 1 ), the side wall SW1 may include an endpoint E1 adjacent to the side wall SW2, and the side wall SW2 may include an endpoint E2 adjacent to the side wall SW1, wherein the endpoint E1 may not be connected to the endpoint E2, or the endpoint E1 may not coincide with the endpoint E2, or there is a distance between the endpoint E1 and the endpoint E2. And the distance is greater than 0. Since the organic insulating layer OIL can be directly disposed on the filter layer CFL, the endpoint E1 of the side wall SW1 and the endpoint E2 of the side wall SW2 may be located on the upper surface SF1 of the filter layer CFL. In other words, in this embodiment, the intersection point of the side wall SW1 and the upper surface SF1 of the filter layer CFL (i.e., the endpoint E1) does not coincide with the intersection point of the side wall SW2 and the upper surface SF1 of the filter layer CFL (i.e., the endpoint E2). In one embodiment, when the side wall SW1 and the side wall SW2 are planes in the cross-sectional view of the electronic device ED (for example Figure 1 As shown), the above “side wall SW1 and side wall SW2 are discontinuous” may also mean that side wall SW1 and side wall SW2 are not on the same plane.

[0043] By designing the dimensions of the through hole VH1 and the through hole VH2, in the cross-sectional view of the electronic device ED (for example Figure 1 ), the filter layer CFL may protrude from the organic insulating layer OIL, or the side surface of the filter layer CFL (corresponding to the side wall SW1) may protrude from the side surface of the organic insulating layer OIL (corresponding to the side wall SW2), so as to achieve the discontinuity of the side wall SW1 of the through hole VH1 and the side wall SW2 of the through hole VH2, but the present invention is not limited thereto. In this case, at least a portion of the upper surface SF1 of the filter layer CFL will not be covered by the organic insulating layer OIL, that is, the through hole VH2 may expose at least a portion of the upper surface SF1 of the filter layer CFL. In addition, if Figure 1 As shown, in this embodiment, the side wall SW1 and the side wall SW2 may form a stepped side wall, for example, but not limited thereto.

[0044] According to this embodiment, the size of the through hole VH2 may be larger than the size of the through hole VH1 to which it corresponds. For example, the width of the through hole VH2 may be larger than the width of the through hole VH1. Here, the “width of the through hole” may refer to the bottom width of the through hole in the cross-sectional view of the electronic device ED. Figure 1 As shown, the through hole VH1 may have a width W1, and the through hole VH2 corresponding to the through hole VH1 may have a width W2, wherein the width W2 may be greater than the width W1. In some embodiments, the size of the through hole may refer to the area of ​​the through hole, such as the projection area of ​​the through hole on the plane XY, wherein the area of ​​the through hole VH2 may be greater than the area of ​​the through hole VH1.

[0045] It should be noted that Figure 1 The structural features of the through holes are illustrated by taking the through holes VH1 in the first filter element CP1 and the through holes VH2 corresponding to the through holes VH1 as examples, and the structural features of the through holes VH1 and the through holes VH2 corresponding to the through holes VH1 in other filter elements can be referred to above, so they will not be repeated here.

[0046] like Figure 1 As shown, the electronic device ED of this embodiment may further include an insulating layer IN disposed between the organic insulating layer OIL and the transparent conductive layer TCL. In detail, the insulating layer IN may be disposed on the organic insulating layer OIL, and the transparent insulating layer TCL may be disposed on the insulating layer IN. According to this embodiment, the insulating layer IN may be disposed in the through hole VH2 and disposed on the filter layer CFL. Specifically, a portion of the insulating layer IN may enter the through hole VH2 and extend along the side wall SW2 of the through hole VH2, thereby contacting the upper surface SF1 of the filter layer CFL, or in other words, contacting a portion of the upper surface SF1 of the filter layer CFL exposed by the through hole VH2. In other words, a portion of the insulating layer IN may be directly disposed on the filter layer CFL. In this case, the insulating layer IN may contact the side wall SW2 of the through hole VH2, or in other words, the insulating layer IN may cover the side surface of the organic insulating layer OIL (corresponding to the side wall SW2). The insulating layer IN may include a through hole VH3, wherein the through hole VH3 may correspond to the through hole VH1 and the through hole VH2. The insulating layer IN can be used to protect the organic insulating layer OIL during the formation process of the through hole VH1 (described below), thereby reducing the possibility of the organic insulating layer OIL being damaged. The insulating layer IN may include any suitable inorganic insulating material, such as silicon nitride (SiN x ), but is not limited to this.

[0047] According to the present embodiment, since the filter layer CFL of the electronic device ED can be directly disposed on the circuit layer CL, that is, the electronic device ED is formed by the color filter film process on the array, the possibility of affecting the display quality of the electronic device ED due to light color mixing can be reduced. In addition, by making the size (e.g., width) of the through hole VH1 in the filter layer CFL smaller than the size (e.g., width) of the through hole VH2 in the corresponding organic insulating layer OIL, that is, by having a discontinuous sidewall between the through hole VH1 and the corresponding through hole VH2, the coverage area of ​​the filter layer CFL can be increased. In this way, the possibility of light leakage at the through hole VH1 can be reduced, thereby improving the display quality of the electronic device ED.

[0048] Some embodiments of the structures of the filter layer CFL, the through hole VH1 and the through hole VH2 of the electronic device ED of this embodiment are described below.

[0049] Please refer to Figures 3 to 5 , Figure 3 It is a top view schematic diagram of a filter layer of a variation of the first embodiment of the present invention, Figure 4 This is a schematic top view of a filter layer according to another variant of the first embodiment of the present invention. Figure 5 FIG. 1 is a top view schematic diagram of a filter layer according to another variation of the first embodiment of the present invention. According to this embodiment, the filter layer CFL may include a patterned structure, or the filter elements in the filter layer CFL may be patterned elements. Specifically, in the process of forming the filter layer CFL, a plurality of patterned first filter elements CP1, a plurality of patterned second filter elements CP2, and a plurality of patterned third filter elements CP3 may be formed on the circuit layer CL, respectively, to form the filter layer CFL. In some embodiments, as Figure 3 As shown, the filter layer CFL may include an island structure, or the first filter element CP1, the second filter element CP2 and the third filter element CP3 in the filter layer CFL may have an island shape. Figure 4 and Figure 5 As shown, the filter layer CFL may include a stripe structure (or a stripe structure), or the first filter element CP1, the second filter element CP2, and the third filter element CP3 in the filter layer CFL may have a stripe shape (or a stripe shape). It should be noted that the filter layer CFL may include any suitable patterned structure according to the design requirements of the electronic device ED, and is not limited to the above.

[0050] also, Figures 3 to 5 Some embodiments of the structure of the through hole VH1 and the through hole VH2 are shown. In some embodiments, as Figure 3As shown, a through hole VH1 in the filter layer CFL may be formed by removing a portion of a plurality of filter elements, and the organic insulating layer OIL may include a through hole VH2 corresponding to the through hole VH1. In other words, the through holes in the plurality of filter elements may be connected to each other and may be regarded as a continuous through hole VH1. For example, the through hole VH1 may include a continuous structure formed by removing a portion of the first filter element CP1, the second filter element CP2, and the third filter element CP3 of the filter layer CFL, respectively, but is not limited thereto. The through hole VH2 may have a slit shape ( Figure 3 The through hole VH2 may be formed by removing a portion of any number of filter elements, and may be formed by removing a portion of the filter elements. Figure 3 In some embodiments, as shown Figure 4 As shown, the filter elements (e.g., the first filter element CP1, the second filter element CP2, and the third filter element CP3) of the filter layer CFL may include through holes VH1 that are independent of each other, and the organic insulating layer OIL may include through holes VH2 having a slit shape or other suitable long strip shapes, wherein the through holes VH2 may overlap with a plurality of through holes VH1 in a top view direction of the electronic device ED. In some embodiments, as Figure 5 As shown, the filter elements (eg, the first filter element CP1, the second filter element CP2, and the third filter element CP3) of the filter layer CFL may include independent through holes VH1, and the organic insulating layer OIL may include independent through holes VH2 corresponding to the through holes VH1.

[0051] It should be noted that the through hole VH1 and the through hole VH2 may include any suitable structure according to the design requirements of the electronic device ED and are not limited to the above contents.

[0052] More embodiments of the present invention will be described below. To simplify the description, the same film layers or components in the following embodiments will use the same reference numerals, and their features will not be repeated, while the differences between the embodiments will be described in detail below.

[0053] Please refer to Figure 6 to Figure 7 , Figure 6 is a partial cross-sectional schematic diagram of an electronic device according to a first embodiment of the present invention, Figure 7 FIG. 1 is a partial top view of a driving element of an electronic device according to a second embodiment of the present invention. To simplify the diagram, Figure 7 Only some of the layers in the electronic device are shown. Figure 6The drive unit DU shown can be Figure 7 The structure shown is a cross-sectional view along the tangent line BB'. One of the differences between the electronic device ED2 of this embodiment and the electronic device ED of the above-mentioned embodiment is the structural design of the circuit layer CL. Figure 6 As shown, the circuit layer CL of the electronic device ED2 may include a buffer layer BF disposed on the substrate SB, an insulating layer IL4 disposed on the buffer layer BF, a conductive layer M4 disposed on the insulating layer IL4, an insulating layer IL5 disposed on the insulating layer IL4 and covering the conductive layer M4, an insulating layer IL6 disposed on the insulating layer IL5, a semiconductor layer SM2 disposed on the insulating layer IL6, an insulating layer IL7 disposed on the insulating layer IL6 and covering the semiconductor layer SM2, a conductive layer M5 disposed on the insulating layer IL7, an insulating layer IL8 disposed on the insulating layer IL7 and covering the conductive layer M5, a conductive layer M6 disposed on the insulating layer IL8, an insulating layer IL9 disposed on the insulating layer IL8 and covering the conductive layer M6, and a conductive layer M7 disposed on the insulating layer IL9, but is not limited thereto. The conductive layer M7 may directly contact the filter layer CFL and be covered by the filter layer CFL. The features of the buffer layer BF may refer to the above, so they will not be repeated. The materials of the insulating layer in the circuit layer CL may refer to the materials of the above-mentioned insulating layer IL1, insulating layer IL2 and insulating layer IL3, so they will not be repeated. It should be noted that the structure of the circuit layer CL is only exemplary. The structure of the circuit layer CL in this embodiment is not limited to Figure 6 Limits shown.

[0054] The circuit layer CL of the present embodiment may include a driving unit DU2, and the driving unit DU2 may include a semiconductor layer SM2, a gate electrode GE2, a source electrode SOE2, and a drain electrode DOE2, wherein the gate electrode GE2 may be formed by a conductive layer M5, the source electrode SOE2 may be formed by a conductive layer M6, and the drain electrode DOE2 may be formed by a conductive layer M7. The semiconductor layer SM2 may include a metal oxide semiconductor material, such as, but not limited to, indium gallium zinc oxide (IGZO). The source electrode SOE2 and the gate electrode GE2 may include any suitable conductive material, such as, but not limited to, a metal material. The drain electrode DOE2 may include any suitable transparent conductive material, such as, but not limited to, indium tin oxide (ITO). As Figure 7As shown, the electronic device ED2 may include a data line DL2 and a scan line GL2 disposed on the substrate SB. The configuration of the data line DL2 and the scan line GL2 may refer to the above, so it will not be repeated. The gate electrode GE2 of the driving unit DU2 may be a part of the scan line GL2, that is, the gate electrode GE2 is electrically connected to the scan line GL2; the source electrode SOE2 of the driving unit DU2 may be a part of the data line DL2, that is, the source electrode SOE2 is electrically connected to the data line DL2. Therefore, the scan line GL2 may be formed by the conductive layer M5, and the data line DL2 may be formed by the conductive layer M6, but is not limited thereto. The semiconductor layer SM2 may include a channel region CR2, a drain region DR2, and a source region SR2. The channel region CR2 may be defined as a part of the semiconductor layer SM2 corresponding to (or overlapping) the scan line GL2. The source region SR2 of the semiconductor layer SM2 may be electrically connected to the data line DL2, or in other words, electrically connected to the source electrode SOE2. The drain region DR2 of the semiconductor layer SM2 may be electrically connected to the drain electrode DOE2. The insulating layer IL7 of the circuit layer CL can be used as a gate insulating layer of the driving unit DU2. In other embodiments, another metal layer (not shown) can be disposed on the conductive layer M7 and corresponding to the through hole VH1, that is, the other metal layer is located between the conductive layer M7 and the transparent conductive layer TCL, wherein the other metal layer can reduce the risk of residual filter layer CFL when forming the through hole VH1.

[0055] In some embodiments, the conductive layer M4 in the circuit layer CL can be used as a light shielding layer, such as the light shielding layer LS described above. Specifically, the conductive layer M4 can be arranged corresponding to the driving unit DU2, or at least arranged corresponding to the semiconductor layer SM2 of the driving unit DU2. In some embodiments, the conductive layer M4 can be used as another gate of the driving unit DU2. In this case, the driving unit DU2 may include a dual-gate thin-film transistor element. The conductive layer M4 may include any suitable conductive material, such as a metal material.

[0056] In addition, according to this embodiment, the electronic device ED2 may not include the above-mentioned insulating layer IN, that is, the transparent conductive layer TCL may be directly disposed on the organic insulating layer OIL. In this case, the transparent conductive layer TCL may directly contact the side wall SW1 of the through hole VH1 and the side wall SW2 of the through hole VH2. In this embodiment, the through hole VH1 and the through hole VH2 may expose the drain electrode DOE2 of the driving unit DU, and the transparent conductive layer TCL may directly contact the drain electrode DOE2 through the through hole VH1 and the through hole VH2, thereby being electrically connected to the driving unit DU2, but the present invention is not limited thereto. The features of other components or film layers of the electronic device ED2 may refer to the contents of the above-mentioned embodiments, so they will not be described in detail.

[0057] Please refer to Figures 8 to 11 , Figure 8is a schematic flow chart of a method for manufacturing an electronic device according to a third embodiment of the present invention, Figures 9 to 11 The manufacturing process of the electronic device according to the third embodiment of the present invention is shown in FIG. 1. According to the present embodiment, the manufacturing method M100 of the electronic device ED3 may include the following steps:

[0058] S100: providing a substrate;

[0059] S102: forming a circuit layer on the substrate;

[0060] S104: forming a filter layer on the circuit layer;

[0061] S106: forming an organic insulating layer on the filter layer;

[0062] S108: forming a first through hole in the organic insulating layer;

[0063] S110: forming a second through hole in the filter layer; and

[0064] S112: forming a transparent conductive layer, wherein the transparent conductive layer is electrically connected to the circuit layer through the first through hole and the second through hole.

[0065] The following will describe in detail each step of the manufacturing method M100 of the electronic device ED3.

[0066] like Fig. 9 As shown, the manufacturing method M100 of the electronic device ED3 may first include step S100 of providing a substrate SB, and step S102 of forming a circuit layer CL on the substrate SB. The structure of the substrate SB may be referred to above, so it will not be described in detail. Fig. 9 The structure of the circuit layer CL provided on the substrate SB may be Figure 1 The structure of the circuit layer CL is shown in FIG. 1 , but is not limited thereto. In other embodiments, a circuit layer CL may be provided on the substrate SB. Figure 6 The structure of the circuit layer CL shown in the figure or other suitable structures. Fig. 9 Taking the structure shown as an example, the circuit layer CL can be formed by sequentially disposing a light shielding layer LS, a buffer layer BF, a semiconductor layer SM, an insulating layer IL1, a conductive layer M1, an insulating layer IL2, a conductive layer M2, an insulating layer IL3 and a conductive layer M3, but is not limited thereto.

[0067] After forming the circuit layer CL, step S104 may be performed to form a filter layer CFL on the circuit layer CL. The filter layer CFL may be formed, for example, by a patterning process. The patterning process of the filter layer CFL may include, for example, a yellow light process, but is not limited thereto. Specifically, a plurality of patterned first filter elements CP1, a plurality of patterned second filter elements CP2, and a plurality of patterned third filter elements CP3 may be formed on the circuit layer CL by a yellow light process, thereby forming the filter layer CFL. The pattern design of the filter layer CFL may refer to the above, so it will not be described in detail. Fig. 9 Parts of the first filter element CP1 and the second filter element CP2 are exemplarily shown, while the third filter element CP3 is not shown, but the embodiment is not limited thereto.

[0068] Next, step S106 may be performed to form an organic insulating layer OIL on the filter layer CFL, and step S108 may be performed to form a first through hole in the organic insulating layer OIL. Fig.10 As shown, after forming the filter layer CFL, a whole layer of organic insulating layer OIL can be first formed on the filter layer CFL, and then a patterning process can be performed on the organic insulating layer OIL to remove part of the organic insulating layer OIL, so as to form a through hole VH2 in the organic insulating layer OIL. In other words, the through hole VH2 is the first through hole described in step S108. The setting position of the through hole VH2 can correspond to the setting position of the subsequent through hole VH1, or correspond to the position of the conductive layer M3 electrically connected to the driving unit DU. The patterning process of the organic insulating layer OIL includes, for example, a yellow light process, but is not limited thereto. After the through hole VH2 is formed, the through hole VH2 may include a side wall SW2 corresponding to the side surface of the organic insulating layer OIL.

[0069] Next, step S110 may be performed to form a second through hole in the filter layer CFL. Fig.11 As shown in FIG. 1 , after forming the through hole VH2, the portion of the filter layer CFL corresponding to the through hole VH2 can be removed to form the through hole VH1. In other words, the through hole VH1 is the second through hole described in step S110. According to the present embodiment, the through hole VH1 in the filter layer CFL can be formed by an etching process, but is not limited thereto. Specifically, after forming the through hole VH2, a photoresist layer ( Fig.11(not shown), and patterning the photoresist layer to define the pattern of the through hole VH1. Then, the filter layer CFL can be subjected to an etching process using the photoresist layer as a mask to form the through hole VH1. The photoresist layer, for example, includes a positive type photoresist, but is not limited thereto. After the through hole VH1 is formed, the through hole VH1 and the through hole VH2 can expose the conductive layer M3 corresponding to the electrical connection to the drive unit DU. Since the patterning ability of the positive type photoresist is better than that of the material of the filter element (such as color resist), a smaller through hole VH1 can be formed in the filter layer CFL. In this way, the possibility of light leakage at the through hole VH1 can be reduced, thereby improving the display quality of the electronic device ED. It should be noted that Figures 9 to 11 Only the manufacturing process of one group of through holes VH1 and through holes H2 is shown exemplarily, and other groups of through holes VH1 and through holes H2 of the electronic device ED3 may include the same manufacturing process, so it will not be described in detail.

[0070] After forming the through hole VH1, the through hole VH1 may include a side wall SW1 corresponding to the side surface of the filter layer CFL. According to the present embodiment, the through hole VH1 and the through hole VH2 may be formed by different processes, so that the size of the through hole VH1 is smaller than the size of the through hole VH2. Specifically, the width of the through hole VH1 may be smaller than the width of the through hole VH2. In this way, the side wall SW1 of the through hole VH1 and the side wall SW2 of the through hole VH2 may be discontinuous.

[0071] In some embodiments, the above-mentioned photoresist layer may not be provided in the process of forming the through hole VH1. Specifically, after forming the through hole VH2 in the organic insulating layer OIL, the filter layer CFL may be etched using the organic insulating layer OIL as a mask to form the through hole VH1. In this case, the organic insulating layer OIL may include any material suitable as an etching mask.

[0072] In some embodiments, the electronic device ED3 may further include the above-mentioned insulating layer IN. Specifically, after forming the through hole VH2 in the organic insulating layer OIL, an insulating layer IN may be formed on the organic insulating layer OIL, wherein the insulating layer IN may enter the through hole VH2, extend along the side wall SW2 of the through hole VH2, and cover the side wall of the organic insulating layer OIL and the portion of the surface of the filter layer CFL exposed by the through hole VH2. In other words, the insulating layer IN may be disposed in the through hole VH2. In this case, after forming the through hole VH2, the manufacturing method M100 of the electronic device ED3 may further include forming an insulating layer IN in the first through hole (i.e., the through hole VH2). Next, the above-mentioned step S110 may be performed to form a second through hole (i.e., the through hole VH1) in the filter layer CFL. Specifically, when the filter layer CFL is subjected to an etching process, since the insulating layer IN can cover the portion of the surface of the filter layer CFL exposed by the through hole VH2, the insulating layer IN can be subjected to the etching process at the same time to form a through hole corresponding to the through hole VH1 in the insulating layer IN, for example Figure 1 In other words, the through hole VH1 and the through hole VH3 can be formed by the same etching process. In this case, the manufacturing method M100 of the electronic device ED3 may further include forming a third through hole (i.e., through hole VH3) in the insulating layer IN, wherein the second through hole (i.e., through hole VH1) and the third through hole (i.e., through hole VH3) are formed at the same time, or in other words, formed in the same process. Since the insulating layer IN can cover the side wall SW2 of the organic insulating layer OIL during the formation process of the through hole VH1, the possibility of the organic insulating layer OIL being damaged can be reduced.

[0073] After forming the through hole VH1, step S112 may be performed to form a transparent electrode layer TCL on the organic insulating layer OIL, wherein the transparent electrode layer TCL may be electrically connected to the circuit layer CL through the first through hole (i.e., through hole VH2) and the second through hole (i.e., through hole VH1), or electrically connected to the driving unit DU in the circuit layer CL. For example, the transparent electrode layer TCL may extend along the side wall SW2 of the through hole VH2 and the side wall SW1 of the through hole VH1 and contact the conductive layer M3. In some embodiments, when the electronic device ED3 further includes an insulating layer IN, the insulating layer IN may be disposed between the side wall SW2 of the through hole VH2 and the transparent conductive layer TCL, i.e., the transparent conductive layer TCL may not contact the side wall SW2. After forming the transparent conductive layer TCL, a Fig.11 It should be noted that the electronic device ED3 may also include other suitable elements or layers, and the manufacturing method M100 of the electronic device ED3 may include other suitable steps or processes according to the design requirements of the electronic device ED3.

[0074] In some embodiments, the manufacturing method of the electronic device ED3 may include first forming a through hole VH1 in the filter layer CFL, and then forming a through hole VH2 in the organic insulating layer OIL. Specifically, step S100, step S102, and step S104 in the manufacturing method M100 may be performed first, and after completing step S104 (i.e., forming the filter layer CFL on the circuit layer CL), step S110 may be performed to form the through hole VH1 in the filter layer CFL. In some embodiments, when the filter layer CFL is patterned by a yellow light process, the through hole VH1 may be formed in the patterning process of the filter layer CFL at the same time, that is, the through hole VH1 may be formed by a yellow light process. In some embodiments, the filter layer CFL may be patterned by a yellow light process first, and then the through hole VH1 may be formed by an etching process. Thereafter, step S106 may be performed to form the organic insulating layer OIL on the filter layer CFL, and step S108 may be performed to form the through hole VH2 in the organic insulating layer OIL. Next, step S112 may be performed to form a transparent electrode layer TCL on the organic insulating layer OIL to form an electronic device ED3.

[0075] In summary, the present invention provides an electronic device and a method for manufacturing the same. The electronic device includes a filter layer disposed on a circuit layer, an organic insulating layer disposed on the filter layer, and a transparent conductive layer disposed on the organic insulating layer. The filter layer may have a first through hole, and the first through hole has a first side wall. The organic insulating layer may have a second through hole corresponding to the first through hole, and the second through hole has a second side wall. According to the present invention, through the manufacturing method of the first through hole and the second through hole, the first side wall of the first through hole and the second side wall of the second through hole can be discontinuous, and the width of the first through hole can be smaller than the width of the second through hole. In this way, the possibility of light leakage can be reduced, thereby improving the display quality of the electronic device.

[0076] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An electronic device, characterized in that: include: a substrate; a circuit layer, disposed on the substrate; a filter layer, disposed on the circuit layer and having a first through hole; an organic insulating layer, disposed on the filter layer and having a second through hole, wherein the second through hole corresponds to the first through hole; and a transparent conductive layer, the transparent conductive layer being electrically connected to the circuit layer through the first through hole and the second through hole; The first through hole has a first side wall, the second through hole has a second side wall, the first side wall and the second side wall are discontinuous, and the width of the first through hole is smaller than the width of the second through hole.

2. The electronic device according to claim 1, characterized in that: The second through hole exposes at least a portion of the upper surface of the filter layer.

3. The electronic device according to claim 1, characterized in that: The invention also comprises an insulating layer, wherein the insulating layer is arranged in the second through hole and on the filter layer.

4. The electronic device according to claim 3, characterized in that: The insulating layer contacts the second side wall and contacts an upper surface of the filter layer.

5. The electronic device according to claim 1, characterized in that: The first side wall and the second side wall form a stepped side wall.

6. The electronic device according to claim 1, characterized in that: The transparent conductive layer directly contacts the first side wall and the second side wall.

7. A method for manufacturing an electronic device, characterized in that: include: providing a substrate; forming a circuit layer on the substrate; forming a filter layer on the circuit layer; forming an organic insulating layer on the filter layer; forming a first through hole in the organic insulating layer; forming a second through hole in the filter layer, wherein the second through hole corresponds to the first through hole; and forming a transparent conductive layer, wherein the transparent conductive layer is electrically connected to the circuit layer through the first through hole and the second through hole; The first through hole has a first side wall, the second through hole has a second side wall, the first side wall and the second side wall are discontinuous, and the width of the second through hole is smaller than the width of the first through hole.

8. The method for manufacturing an electronic device according to claim 7, characterized in that: After forming the first through hole, the method further includes forming an insulating layer in the first through hole.

9. The method for manufacturing an electronic device according to claim 8, characterized in that: The method further includes forming a third through hole in the insulating layer, wherein the second through hole and the third through hole are formed simultaneously.

10. The method for manufacturing an electronic device according to claim 7, wherein: The second through hole is formed by an etching process.

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