A porous polyimide film, a method for preparing the same, and an application thereof

By preparing porous polyimide films and utilizing the thermal decomposition of polyethylene glycol side chains to generate porous structures, the dielectric constant of the films is reduced, solving the problem of high dielectric constant in traditional PI films and realizing a low-dielectric and flexible material suitable for 5G communication devices.

CN119751957BActive Publication Date: 2026-06-05ANHUI POLYTECHNIC UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ANHUI POLYTECHNIC UNIV
Filing Date
2024-12-19
Publication Date
2026-06-05

AI Technical Summary

Technical Problem

Traditional PI films have a high dielectric constant, which cannot meet the low dielectric requirements of 5G communication devices, and they also have problems such as being dark in color and having high moisture absorption.

Method used

Intrinsic polyimide materials were prepared by synthesizing diamine monomers containing thermally degradable polyethylene glycol, and the porous structure generated by the thermal decomposition of its side chains was utilized to reduce the dielectric constant of the film.

Benefits of technology

It achieves low dielectric properties and good flexibility in polyimide films, making them suitable for dielectric layers and integrated circuit chips in the microelectronics industry, thus overcoming the shortcomings of traditional films in terms of dielectric and mechanical properties.

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Abstract

The application discloses a kind of porous polyimide film and preparation method and application thereof, belong to polyimide film material technical field, the preparation method includes the following steps: polyethylene glycol monomethyl ether is esterified with 3-5-dual (4-nitrophenyloxy) benzoic acid, and esterification product is obtained;Esterification product is carried out hydrogenation reaction, and hydrogenation product is obtained;Hydrogenation product and dianhydride monomer are polymerized under the catalysis of isoquinoline and acetic anhydride, and polyamide imine solution is obtained;Polyamide imine solution is uniformly coated on substrate, then is kept at 250~300 DEG C for 3.5~5.0h, and porous polyimide film is prepared;The structure of polyimide is designed in the application, the dielectric constant of polyimide film is significantly reduced to 2.3 or less, and porous structure is generated in polyimide film;The porous polyimide film can be used as flexible dielectric material in microelectronic industry dielectric layer, multi-chip module or integrated circuit chip.
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