Contact structure and manufacturing method thereof
By forming an amino layer covering the inner wall of the contact hole in the contact structure, the high resistivity problem caused by the adhesion barrier layer is solved, and the effect of reducing the resistance of the contact structure and improving the electrical performance is achieved.
Patent Information
- Application Number
- CN202411991020.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-04-04
AI Technical Summary
In the prior art, the resistivity caused by the adhesion barrier layer in the interconnect structure is relatively large, especially when the device size is reduced, which significantly affects the device performance.
By forming a covered amino layer in the inner wall of the contact hole, the formation of the conductive resistive layer is reduced or eliminated, the contact effect between the metal filling layer and the metal electrode layer is ensured, and the resistance of the contact structure is reduced.
It effectively reduces the resistance of the contact structure, improves electrical performance and reliability, and reduces the proportion of the conductive resistor layer in the contact structure.
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Figure CN119764255A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the field of semiconductor integrated circuit manufacturing and relates to a contact structure and a manufacturing method thereof. Background Art
[0002] As the size of devices in integrated circuits continues to shrink, RC delay has become the main factor restricting the operating frequency of the circuit. In order to reduce the RC delay of the circuit, W and Cu and low dielectric constant (or ultra-low dielectric constant) materials are introduced into the device as interconnect conductors and dielectric materials, respectively. Although W and Cu have many advantages as interconnect metals for metal electrodes, they also introduce new problems. For example, the interconnect metal material has poor adhesion to the dielectric material and is easy to diffuse into the dielectric material, which seriously affects the reliability and performance of the device. To solve these problems, a buffer adhesion barrier layer (glue and barrier layer) Ti and TiN, Ta and TaN, such as are introduced between the interconnect metal material and the dielectric material. Figure 1 , which is a schematic diagram of the interconnect structure, includes a semiconductor structure 01, a dielectric material layer 011, a metal electrode 012, a contact hole 013, a Ta layer 02, a TaN layer 021 and an interconnect metal layer 03. However, the resistivity of the adhesion barrier layer (Ti and TiN, Ta and TaN) is greater than that of the interconnect metal W and Cu, and thus increases the resistance R of the interconnect structure. In particular, when the size of the interconnect line, the contact hole and the through hole (equivalent to the contact hole 013) is reduced, the volume ratio occupied by the adhesion barrier layer increases, which significantly increases the effective resistivity and affects the device performance.
[0003] Therefore, there is an urgent need to find a method for manufacturing a contact structure that reduces the resistance of the contact structure. Summary of the invention
[0004] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a contact structure and a manufacturing method thereof, so as to solve the problem of high resistivity caused by the adhesion barrier layer in the interconnect structure in the prior art.
[0005] To achieve the above object and other related objects, the present invention provides a method for manufacturing a contact structure, comprising the following steps:
[0006] Providing a wafer, the wafer comprising a dielectric layer located on the upper surface of the wafer and at least one contact hole penetrating the dielectric layer, wherein the bottom surface of the contact hole exposes a metal electrode layer;
[0007] Pre-treating the surface of the dielectric layer exposed by the inner wall of the contact hole, and forming an amino layer with a preset thickness and covering the inner wall of the contact hole;
[0008] A metal filling layer is formed to fill the contact hole.
[0009] Optionally, the method of pre-treating the surface of the dielectric layer exposed by the inner wall of the contact hole comprises wet cleaning.
[0010] Optionally, the preset thickness ranges from 0.9 nm to 1.2 nm.
[0011] Optionally, the method of forming the amino layer includes immersion in an organic siloxane solution and atomic layer deposition.
[0012] Optionally, in the process of preparing the amino layer by the method of immersing the organic siloxane solution, after immersing the wafer in the organic siloxane solution of a preset concentration for a first preset time, a step of baking the wafer at a preset temperature and for a second preset time is further included.
[0013] Optionally, the organosiloxane solution includes 3-aminopropyltrimethoxysilane solution and 3-aminopropyltriethoxysilane solution.
[0014] Optionally, before soaking the wafer in the organosiloxane solution, the method further includes a step of adjusting the composition of the organosiloxane solution.
[0015] Optionally, the preset concentration ranges from 1mmol / L to 5mmol / L; the first preset time ranges from 0.5h to 6h; the preset temperature ranges from 100°C to 140°C; and the second preset time ranges from 20min to 40min.
[0016] Optionally, after forming the amino layer and before forming the metal filling layer, the step of forming a conductive barrier layer covering the side of the amino layer facing away from the inner wall of the contact hole is also included, and the conductive barrier layer covers the surface of the metal electrode layer exposed at the bottom of the contact hole after forming the amino layer.
[0017] The present invention also provides a contact structure, and the contact structure is manufactured by using the manufacturing method of the contact structure described above.
[0018] As described above, the contact structure and the manufacturing method thereof of the present invention are as follows: after forming the contact hole, an amino layer is formed to cover the inner wall of the contact hole, so that the conductive barrier layer with a larger resistivity can be omitted or its proportion in the contact structure can be reduced, and the amino layer does not cover the surface of the metal electrode layer exposed at the bottom of the contact hole, thereby ensuring the contact effect between the conductive barrier layer or the metal filling layer and the metal electrode layer, reducing the resistance of the contact structure, and improving the electrical performance and reliability of the contact structure, and having a high industrial utilization value. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 A schematic diagram showing the interconnected structure.
[0020] Figure 2 Shown is a process flow chart of a method for manufacturing a contact structure of the present invention.
[0021] Figure 3 The schematic diagram shows the structure of the contact hole of the wafer in the method for manufacturing the contact structure of the present invention.
[0022] Figure 4 It is a schematic structural diagram showing the method for manufacturing the contact structure of the present invention after pre-treating the surface of the dielectric layer.
[0023] Figure 5 It is a schematic diagram showing the structure after the amino layer is formed in the method for manufacturing the contact structure of the present invention.
[0024] Figure 6 It is a schematic diagram showing the structure after forming a conductive barrier layer in the method for manufacturing the contact structure of the present invention.
[0025] Figure 7 It is a schematic diagram showing the structure after forming a metal filling layer in the method for manufacturing the contact structure of the present invention.
[0026] Description of Figure Numbers
[0027] 01 Semiconductor Structure
[0028] 011 Dielectric material layer
[0029] 012 Metal Electrode
[0030] 013 Contact hole
[0031] 02 Floor
[0032] 021 TaN layer
[0033] 03 Interconnect Metal Layer
[0034] 1 Wafer
[0035] 11 Dielectric layer
[0036] 12 Metal electrode layer
[0037] 13 Contact hole
[0038] 2 Amino layer
[0039] 3 Conductive barrier layer
[0040] 4 Metal filling layer DETAILED DESCRIPTION
[0041] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.
[0042] See also Figures 2 to 7 It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.
[0043] Embodiment 1
[0044] This embodiment provides a method for manufacturing a contact structure, such as Figure 2 FIG. 1 is a process flow chart of a method for manufacturing the contact structure, comprising the following steps:
[0045] S1: providing a wafer, wherein the wafer comprises a dielectric layer located on the upper surface of the wafer and at least one contact hole penetrating the dielectric layer, wherein a metal electrode layer is exposed on the bottom surface of the contact hole;
[0046] S2: pre-treating the surface of the dielectric layer exposed by the inner wall of the contact hole, and forming an amino layer with a preset thickness and covering the inner wall of the contact hole;
[0047] S3: forming a metal filling layer filling the contact hole.
[0048] See also Figures 3 to 5 , perform step S1 and step S2: provide a wafer 1, the wafer 1 includes a dielectric layer 11 located on the upper surface of the wafer 1 and at least one contact hole 13 penetrating the dielectric layer 11, and the bottom surface of the contact hole 13 exposes the metal electrode layer 12; pre-treat the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13, and form an amino layer 2 with a preset thickness and covering the inner wall of the contact hole 13.
[0049] It should be noted that the wafer 1 is usually a wafer 1 for making lead-out interconnection lines or electrodes during device packaging or device manufacturing, and its specific structure, size and shape can be selected according to actual conditions.
[0050] Specifically, Figure 3As shown, it is a schematic diagram of the structure at the contact hole 13 of the wafer 1. Usually, the dielectric layer 11 is used to protect the wafer 1 and realize the insulation between the various parts of the device in the wafer 1. Under the condition of ensuring the performance of the manufactured contact structure, the thickness of the dielectric layer 11 can be selected according to the actual situation.
[0051] Specifically, the material of the dielectric layer 11 includes silicon oxide, silicon nitride, silicon oxynitride or other suitable dielectric materials. Preferably, a silicon oxide layer is used as the dielectric layer 11.
[0052] Specifically, under the condition of ensuring the performance of the contact structure, the opening size and opening shape of the contact hole 13 can be selected according to actual conditions.
[0053] Specifically, the metal electrode layer 12 at the bottom of the contact hole 13 may be a metal line for interconnection during packaging or device manufacturing, or may be an electrode required for interconnection in the device.
[0054] Specifically, only the metal electrode layer 12 is exposed on the bottom surface of the contact hole 13 to ensure the reliability of the contact structure formed subsequently.
[0055] Specifically, the material of the metal electrode layer 12 includes titanium, silver, gold, copper, aluminum, nickel, tungsten, platinum, tantalum or other suitable conductive materials.
[0056] As an example, Figure 4 , which is a schematic diagram of the structure after the surface of the dielectric layer 11 is pretreated, and the method for pretreating the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13 includes wet cleaning or other suitable methods. Preferably, the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13 is cleaned by an RCA cleaning process.
[0057] Specifically, by pre-treating the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13 , hydrophilic hydroxyl groups are formed on the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13 , so as to facilitate the subsequent formation of the amino layer 2 .
[0058] As an example, Figure 5 , which is a schematic diagram of the structure after the amino layer 2 is formed, and the method for forming the amino layer 2 includes immersion in an organic siloxane solution, atomic layer deposition or other suitable methods. Preferably, the amino layer 2 attached to the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13 is formed by immersion in an organic siloxane solution.
[0059] Specifically, by forming the amino layer 2 on the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13 , the resistance to the diffusion of the subsequently formed metal filling layer into the dielectric layer 11 can be increased, thereby improving the reliability of the contact structure.
[0060] As an example, in the process of preparing the amino layer 2 by soaking in an organic siloxane solution, after soaking in an organic siloxane solution of a preset concentration for a first preset time, the process further includes baking the wafer 1 at a preset temperature and for a second preset time.
[0061] Specifically, after pretreatment, since the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13 has hydroxyl groups attached thereto, during the immersion process of the organic siloxane solution, the organic siloxane in the solution will be more easily adsorbed onto the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13 .
[0062] It should be noted that usually after pretreatment, hydroxyl groups will be formed on the exposed upper surface of the dielectric layer, which will cause the exposed upper surface of the dielectric layer to adsorb organic siloxane after immersion.
[0063] As an example, the preset concentration ranges from 1mmol / L to 5mmol / L, that is, the concentration range of the organic siloxane solution in which the pretreated wafer 1 is immersed is from 1mmol / L to 5mmol / L, for example, it can be 1mmol / L, 2mmol / L, 3mmol / L, 4mmol / L, 5mmol / L. Preferably, the pretreated wafer 1 is immersed in a 2mmol / L organic siloxane solution.
[0064] Specifically, the concentration of the pre-treated organic siloxane solution is controlled between 1 mmol / L and 5 mmol / L, so as to obtain a relatively stable solution and a better quality adsorption effect.
[0065] As an example, before the wafer 1 is soaked in the organic siloxane solution, a step of adjusting the composition of the organic siloxane solution is also included.
[0066] Specifically, when the amino layer 2 is prepared by immersing the amino layer 2 in an organic siloxane solution, the adsorption effect of the organic siloxane can be adjusted by adjusting the components of the organic siloxane solution, such as the pH value, and then the density and thickness of the organic siloxane adsorbed on the surface of the dielectric layer 11 exposed by the inner wall of the first contact hole 13 can be adjusted, so that the quality and thickness of the subsequently formed amino layer 2 can be adjusted. Preferably, due to the presence of amino groups in the amino layer 2, the pH value of the solution can be adjusted by adjusting the components of the organic siloxane solution, and then the adsorption effect of the organic siloxane can be adjusted.
[0067] As an example, the organosiloxane solution includes 3-aminopropyltrimethoxysilane (APTMS) solution, 3-aminopropyltriethoxysilane (APTES) solution, or other suitable organosiloxane solutions containing amino groups.
[0068] As an example, the first preset time ranges from 0.5h to 6h, that is, the time range for immersing the pretreated wafer 1 in the organic silicone solution is 0.5h to 6h, for example, it can be 0.5h, 1h, 2h, 3h, 4h, 5h, 6h.
[0069] Specifically, under the condition of ensuring the thickness of the amino layer 2 obtained subsequently, the pretreated wafer 1 may also be immersed in the organic siloxane solution for other time periods.
[0070] It should be noted that the temperature of the organosiloxane solution for soaking the pretreated wafer 1 is usually room temperature (25° C.). Under the condition of ensuring the quality and thickness of the amino layer 2 formed subsequently, the organosiloxane solution of other temperature can also be selected to soak the pretreated wafer 1.
[0071] As an example, the preset temperature ranges from 100° C. to 140° C., that is, the baking temperature range for baking the wafer 1 after soaking in the organic siloxane solution is 100° C. to 140° C., for example, it can be 100° C., 110° C., 120° C., 130° C., 140° C. Preferably, the wafer 1 soaked in the organic siloxane solution is baked at a baking temperature of 120° C.
[0072] Specifically, when the amino layer 2 is prepared by soaking in an organic siloxane solution, after soaking, the solvent in the organic siloxane adsorbed on the inner wall surface of the contact hole 13 can be removed by baking the wafer 1 to form the amino layer 2, which is also conducive to forming a relatively stable covalent bond connection between the dielectric layer 11 on the inner wall of the contact hole 13 and the amino layer 2. In this embodiment, the covalent bond formed between the amino layer 2 and the dielectric layer 11 on the inner wall surface of the contact hole 13 is Si-O-Si.
[0073] As an example, the second preset time ranges from 20 minutes to 40 minutes, that is, the time range for baking the wafer 1 soaked in the organic siloxane solution is 20 minutes to 40 minutes, for example, it can be 20 minutes, 25 minutes, 30 minutes, 35 minutes, 40 minutes. Preferably, the wafer 1 soaked in the organic siloxane solution is baked for 30 minutes.
[0074] Specifically, when the amino layer 2 is formed by immersing the wafer 1 in the organic siloxane solution, during the process of baking the wafer 1 immersed in the organic siloxane solution, by making the baking temperature at a preset temperature and the baking time at a second preset time, a relatively stable covalent bond can be formed between the amino layer 2 and the dielectric layer 11 on the inner wall surface of the contact hole 13, and at the same time, the solvent in the amino layer 2 formed after baking is completely removed, thereby ensuring the quality of the formed amino layer 2, and the dielectric constant of the formed amino layer 2 is low (not greater than 4).
[0075] As an example, the preset thickness ranges from 0.9 nm to 1.2 nm, that is, the thickness of the amino layer 2 obtained after baking is between 0.9 nm and 1.2 nm, for example, it can be 0.9 nm, 1 nm, 1.1 nm, or 1.2 nm.
[0076] Specifically, by controlling the thickness of the amino layer 2 to be formed within the range of 0.9 nm to 1.2 nm, it is ensured that the metal filling layer for subsequently filling the contact hole 13 is difficult to diffuse into the dielectric layer 11, while preventing the amino layer 2 from being too thick and affecting the metal filling layer in the subsequently formed contact structure, so that the subsequently formed metal filling layer has better conductive properties.
[0077] It should be noted that, after pretreatment, hydroxyl groups are formed only on the surface of the exposed dielectric layer 11, while hydroxyl groups cannot be formed on the exposed surface of the metal electrode layer 12. Therefore, after soaking in the organic siloxane solution, the exposed surface of the metal electrode layer 12 cannot adsorb the organic siloxane in the solution, and then after baking, the exposed surface of the metal electrode layer 12 cannot form the amino layer 2; when the ALD process is used to form the amino layer 2, the deposited amino layer 2 usually also covers the surface of the metal electrode layer 12 exposed at the bottom of the contact hole 13. Therefore, after the ALD process is completed, the amino layer 2 covering the exposed surface of the metal electrode layer 12 at the bottom of the contact hole 13 needs to be removed to prevent the amino layer 2 from affecting the conductive performance of the contact structure formed subsequently.
[0078] See also Figure 6 to Figure 7 , perform step S3: forming a metal filling layer 4 filling the contact hole 13.
[0079] As an example, Figure 6 As shown, it is a schematic diagram of the structure after the conductive barrier layer 3 is formed. After the amino layer 2 is formed and before the metal filling layer 4 is formed, it also includes the step of forming a conductive barrier layer 3 covering the side of the amino layer 2 facing away from the inner wall of the contact hole 13. The conductive barrier layer 3 covers the surface of the metal electrode layer 12 exposed at the bottom of the contact hole 13 after the amino layer 2 is formed.
[0080] Specifically, due to the formation of the amino layer 2, the diffusion resistance of the subsequently formed metal filling layer 4 into the dielectric layer 11 outside the inner wall of the contact hole 13 is increased, and the effect of suppressing the diffusion of the metal filling layer 4 into the dielectric layer 11 outside the inner wall of the contact hole 13 is better. Through the combination of the amino layer 2 and the conductive barrier layer 3, the metal filling layer 4 can be better blocked from diffusing into the dielectric layer 11 outside the inner wall of the contact hole 13.
[0081] It should be noted that the thickness range of the conductive barrier layer 3 is 0nm to 25nm, for example, it can be 1nm, 5nm, 10nm, 15nm, 20nm, 25nm. Since the amino layer 2 has a good effect in blocking the diffusion of the metal filling layer 4, while ensuring the reliability of the contact structure, there is no need to form a conductive barrier layer 3 between the metal filling layer 4 and the amino layer 2, that is, the thickness of the conductive barrier layer 3 is 0nm.
[0082] Specifically, the material of the conductive barrier layer 3 includes titanium nitride, tantalum nitride or other conductive materials with stable properties.
[0083] Specifically, the method of forming the conductive barrier layer 3 includes chemical vapor deposition, molecular beam epitaxy, magnetron sputtering, evaporation, atomic layer deposition or other suitable methods.
[0084] As an example, Figure 7 , which is a schematic diagram of the structure after forming the metal filling layer 4, the material of the metal filling layer 4 includes copper, tungsten, aluminum, nickel or other suitable conductive materials. Preferably, a copper layer is used as the metal filling layer 4.
[0085] Specifically, the method of forming the metal filling layer 4 includes chemical vapor deposition, magnetron sputtering, evaporation, atomic layer deposition, electroplating, chemical plating or other suitable methods.
[0086] Specifically, after the contact hole 13 is formed, by forming a thin amino layer 2 covering the surface of the dielectric layer 11 exposed by the inner wall of the contact hole 13, and then forming a metal filling layer 4 or a conductive barrier layer 3 and a metal filling layer 4, it is possible to avoid forming a conductive barrier layer 3 or reduce the thickness of the conductive barrier layer 3, reduce the proportion of the conductive barrier layer 3 with a larger resistivity in the contact structure, reduce the resistance of the contact structure, improve the electrical performance of the contact structure, and ensure the reliability of the contact structure.
[0087] Specifically, since the amino layer 2 does not cover the surface of the metal electrode layer 12 exposed at the bottom of the contact hole 13, the amino layer 2 has no effect on the electrical contact performance between the metal filling layer 4 or the conductive barrier layer 3 and the metal electrode layer 12, thereby ensuring the electrical contact performance between the conductive barrier layer 3 or the metal filling layer 4 and the metal electrode layer 12.
[0088] The manufacturing method of the contact structure of the present embodiment improves the manufacturing process of the contact structure. After forming the contact hole 13 and before forming the conductive barrier layer 3, the wafer 1 is pre-treated and the amino layer 2 covering the inner wall of the contact hole 13 is formed in sequence. Since the amino layer 2 has a good effect of inhibiting the diffusion of the metal filling layer 4 into the dielectric layer 11, the formation of the conductive barrier layer 3 can be omitted or the thickness of the conductive barrier layer 3 can be reduced. The amino layer 2 does not cover the surface of the metal electrode layer 12 exposed at the bottom of the contact hole 13, thereby ensuring the contact effect between the conductive barrier layer 3 or the metal filling layer 4 and the metal electrode layer 12, reducing the proportion of the conductive barrier layer 3 in the contact structure, reducing the resistance of the contact structure, and improving the electrical performance and reliability of the contact structure.
[0089] Embodiment 2
[0090] This embodiment also provides a contact structure, such as Figure 7 , which is a schematic diagram of the structure of the contact structure, and the contact structure is manufactured by using the manufacturing method of the contact structure described in the first embodiment.
[0091] Specifically, the contact structure includes a contact hole 13 penetrating the dielectric layer 11 on the surface of the wafer, an amino layer 2 and a metal filling layer 4, the bottom surface of the contact hole 13 exposes the metal electrode layer 12; the amino layer 2 covers the inner wall of the contact hole 13; and the metal filling layer 4 fills the contact hole 13.
[0092] Specifically, a conductive barrier layer 3 is provided between the metal filling layer 4 and the amino layer 2. The thickness of the conductive barrier layer 3 is in the range of 0 nm to 25 nm. By combining the conductive barrier layer 3 with the amino layer 2, the effect of suppressing the diffusion of the metal filling layer 4 into the dielectric layer 11 can be further enhanced.
[0093] Specifically, by adopting the contact structure manufacturing method described in the first embodiment to manufacture the contact structure, the conductive barrier layer 3 is omitted or the proportion of the conductive barrier layer 3 in the contact structure is reduced, thereby improving the conductive performance of the contact structure.
[0094] The contact structure of this embodiment is manufactured by adopting the manufacturing method of the contact structure described in the first embodiment, which can omit the conductive barrier layer 3 or reduce the proportion of the conductive barrier layer 3 in the contact structure, thereby improving the conductive performance of the contact structure.
[0095] In summary, the contact structure and the manufacturing method thereof of the present invention improve the manufacturing process of the contact structure, and after forming the contact hole, an amino layer covering the inner wall of the contact hole is formed, so that the conductive barrier layer with a large resistivity can be omitted or thinned, and the proportion of the conductive barrier layer in the contact structure is reduced. The amino layer does not cover the surface of the metal electrode layer exposed at the bottom of the contact hole, which ensures the contact effect between the conductive barrier layer or the metal filling layer and the metal electrode layer, reduces the resistance of the contact structure, and improves the electrical performance and reliability of the contact structure. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.
[0096] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.
Claims
1. A method for manufacturing a contact structure, characterized in that: The following steps are involved: Providing a wafer, the wafer comprising a dielectric layer located on the upper surface of the wafer and at least one contact hole penetrating the dielectric layer, wherein the bottom surface of the contact hole exposes a metal electrode layer; Pre-treating the surface of the dielectric layer exposed by the inner wall of the contact hole, and forming an amino layer with a preset thickness and covering the inner wall of the contact hole; A metal filling layer is formed to fill the contact hole.
2. The method for manufacturing a contact structure according to claim 1, characterized in that: The method of pre-treating the surface of the dielectric layer exposed by the inner wall of the contact hole comprises wet cleaning.
3. The method for manufacturing a contact structure according to claim 1, characterized in that: The preset thickness ranges from 0.9 nm to 1.2 nm.
4. The method for manufacturing a contact structure according to claim 1, characterized in that: The method of forming the amino layer includes immersion in an organic siloxane solution and atomic layer deposition.
5. The method for manufacturing a contact structure according to claim 4, characterized in that: In the process of preparing the amino layer by the method of soaking in the organic siloxane solution, after soaking in the organic siloxane solution of preset concentration for a first preset time, the step of baking the wafer at a preset temperature and for a second preset time is also included.
6. The method for manufacturing a contact structure according to claim 5, characterized in that: The organic siloxane solution includes 3-aminopropyltrimethoxysilane solution and 3-aminopropyltriethoxysilane solution.
7. The method for manufacturing a contact structure according to claim 5, characterized in that: Before soaking the wafer in the organic siloxane solution, the method further includes a step of adjusting the components of the organic siloxane solution.
8. The method for manufacturing a contact structure according to claim 5, characterized in that: The preset concentration ranges from 1mmol / L to 5mmol / L; the first preset time ranges from 0.5h to 6h; the preset temperature ranges from 100°C to 140°C; and the second preset time ranges from 20min to 40min.
9. The method for manufacturing a contact structure according to claim 1, characterized in that: After forming the amino layer and before forming the metal filling layer, the step of forming a conductive barrier layer covering the side of the amino layer facing away from the inner wall of the contact hole is also included, wherein the conductive barrier layer covers the surface of the metal electrode layer exposed at the bottom of the contact hole after forming the amino layer.
10. A contact structure, characterized in that: The contact structure is manufactured by using the method for manufacturing a contact structure according to any one of claims 1 to 9.