Laminated DBC power module with H-bridge structure

Abstract

The invention relates to the technical field of packaging, in particular to a laminated DBC power module with an H-bridge structure. Comprising a bottom DBC substrate, the upper surface of which is connected with an upper bridge arm chip; the middle-layer DBC substrate is arranged on the upper surface of the bottom-layer DBC substrate, and the upper surface of the middle-layer DBC substrate is connected with a lower bridge arm chip; and the upper-layer DBC substrate is arranged on the upper surface of the middle-layer DBC substrate, and the upper-layer DBC substrate is provided with four gate poles. According to the multi-layer DBC structure, the bottom-layer DBC substrate, the middle-layer DBC substrate and the upper-layer DBC substrate form a multi-layer DBC lamination arrangement mode, a double-layer to three-layer current transmission path can be formed, the module size can be further reduced, the structure is more compact, compared with an existing H-bridge packaging structure, in the multi-layer DBC structure, multi-layer current circulation forms mutual inductance offset, and the structure is more compact. The stray inductance of the power module can be effectively reduced, the voltage spike is reduced, the electrical characteristic, the thermal characteristic, the heat dissipation capability and the through-current capability of the power module are enhanced, and the power density of the module is effectively improved.

Description

Technical Field

[0001] The invention relates to the technical field of packaging, and in particular to an H-bridge structure stacked DBC power module. Background Art

[0002] With the rapid development of power electronics technology, especially in the fields of new energy generation, transportation, etc., higher efficiency and higher power density requirements are put forward for power modules. H-bridge packaged power modules can be widely used in the field of motor control, effectively reducing parasitic inductance and parasitic capacitance, thereby reducing electromagnetic interference and optimizing electromagnetic compatibility performance. In addition, by using H-bridge power modules, pulse width modulation (PWM) and other technologies can be used to obtain high-quality output voltage at a lower device switching frequency, thereby improving the overall efficiency of the system. In addition, the cascaded H-bridge multi-level inverter has the advantages of simple structure and modularity, which is convenient for the expansion and upgrading of power units. In summary, the H-bridge packaged power module can meet the needs of high efficiency, high power density, electromagnetic compatibility and intelligent control in modern power electronics systems, and at the same time promote the technological progress and application expansion in related fields.

[0003] Traditional packaging modules use a multi-chip parallel layout, usually using two layers of DBC substrates, multiple chips, and connection terminals for layout. However, this layout method will bring problems such as occupying too much tile area and large design size. Summary of the invention

[0004] In view of this, the present invention provides an H-bridge structured laminated DBC power module to solve the problems of excessive tiling area and large design size.

[0005] The present invention provides an H-bridge structure stacked DBC power module, comprising:

[0006] The bottom DBC substrate has an upper bridge arm chip connected to the upper surface;

[0007] A middle-layer DBC substrate is arranged on the upper surface of the bottom-layer DBC substrate, and the upper surface of the middle-layer DBC substrate is connected to a lower bridge arm chip;

[0008] An upper DBC substrate is arranged on the upper surface of the middle DBC substrate, and the upper DBC substrate is provided with four gates;

[0009] The middle-layer DBC substrate is formed by combining a first middle-layer DBC substrate and a second middle-layer DBC substrate, wherein two groups of lower bridge arm chips are respectively arranged on the first middle-layer DBC substrate and the second middle-layer DBC substrate;

[0010] The upper bridge arm chips and the lower bridge arm chips are both in two groups and are respectively connected to the four gates. The two groups of upper bridge arm chips are respectively connected to the first middle layer DBC substrate and the second middle layer DBC substrate, and the two groups of lower bridge arm chips are respectively connected to the upper layer DBC substrate.

[0011] By forming a multi-layer DBC stacking arrangement with a bottom DBC substrate, a middle DBC substrate and an upper DBC substrate, a double-layer to triple-layer current transmission path can be formed, which can further reduce the module size and make the structure more compact. Compared with the existing H-bridge packaging structure, in the multi-layer DBC structure of the present application, the multi-layer current flow forms mutual inductance cancellation, which can effectively reduce the stray inductance of the power module, reduce voltage spikes, enhance the electrical characteristics, thermal characteristics, heat dissipation capacity and current flow capacity of the power module, and effectively improve the power density of the module.

[0012] In an optional embodiment, the end side of the bottom DBC substrate is connected with a DC positive terminal, the end side of the upper DBC substrate is connected with a DC negative terminal, and the end side of the middle DBC substrate is connected with a first AC terminal and a second AC terminal; the DC positive terminal can be connected to the positive pole of the power supply to provide a positive voltage for the circuit, and the DC negative terminal can be connected to the negative pole of the power supply to form a circuit loop. The first AC terminal and the second AC terminal can be used to connect an AC load to provide an AC output.

[0013] The DC positive terminal and the DC negative terminal are on the same side, and the first AC terminal and the second AC terminal are respectively arranged on the opposite sides of the DC positive terminal, so that the layout of the terminals can be more reasonable and compact, saving the occupied space.

[0014] In an optional embodiment, the middle-layer DBC substrate is provided with a through hole, and the upper bridge arm chip is located in the through hole;

[0015] The upper DBC substrate is provided with two arms, four gates are provided on the upper surfaces of the two arms, and the upper bridge arm chip and the lower bridge arm chip are both located between the two arms. The distribution of the upper bridge arm chip and the lower bridge arm chip can be made more compact, and the space can be used reasonably. While meeting the continuous demand, the space occupied by the upper bridge arm chip and the lower bridge arm chip can be reduced by using the space stacking method.

[0016] In an optional implementation, the upper surface of the upper bridge arm chip and the upper surface of the middle DBC substrate, the upper surface of the upper bridge arm chip and the upper surface of the lower bridge arm chip and the upper surface of the gate electrode, and the upper surface of the lower bridge arm chip and the upper surface of the upper DBC substrate are all connected by bonding wires, which can increase the flexibility of the connection design and the degree of freedom of the design.

[0017] In an optional implementation, the upper bridge arm chip and the lower bridge arm chip are respectively arranged between four gates, which can make the upper bridge arm chip and the lower bridge arm chip more compact, reduce the overall size of the power module, and improve the power density.

[0018] In an optional implementation, the upper bridge arm chip and the lower bridge arm chip are symmetrically distributed, and the upper bridge arm chip is close to the first AC terminal side, and the lower bridge arm chip is close to the DC positive terminal side.

[0019] In an optional embodiment, the two arms of the upper DBC substrate are symmetrically distributed.

[0020] In an optional implementation, the distribution symmetry axes of the upper bridge arm chip and the lower bridge arm chip coincide with the distribution symmetry axes of the two arms of the upper DBC substrate.

[0021] The symmetrically distributed layout can reduce wiring complexity, simplify the manufacturing and assembly process, and improve production efficiency and reliability. It is also convenient to coordinate the working status of each upper bridge arm chip and lower bridge arm chip, ensuring stability and consistency under different working conditions, and enhancing the overall performance of the system.

[0022] In an optional implementation, it also includes:

[0023] The heat dissipation copper substrate is arranged on the lower surface of the bottom DBC substrate; it can dissipate heat for the entire laminated structure, keep the temperature of the power module stable during operation, and prevent overheating.

[0024] The outer shell is arranged on the upper surface of the heat dissipation copper substrate, and the bottom layer DBC substrate, the middle layer DBC substrate and the upper layer DBC substrate are all located inside the outer shell. The outer shell can protect the bottom layer DBC substrate, the middle layer DBC substrate and the upper layer DBC substrate.

[0025] In an optional implementation, it also includes:

[0026] There are multiple signal terminals, which are respectively arranged on four gates and two arms, and can be used to transmit control signals or feedback signals in the H-bridge power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 A circuit diagram of an embodiment of the present invention;

[0029] Figure 2 It is a schematic diagram of the structure of an embodiment of the present invention;

[0030] Figure 3 It is an exploded diagram of the structure of an embodiment of the present invention;

[0031] Figure 4 Schematic diagram of the position of the housing of an embodiment of the present invention.

[0032] Description of reference numerals:

[0033] 1. Bottom layer DBC substrate; 2. Upper bridge arm chip; 3. Middle layer DBC substrate; 4. Lower bridge arm chip; 5. Upper layer DBC substrate; 6. Gate; 7. DC positive terminal; 8. DC negative terminal; 9. First AC terminal; 10. Second AC terminal; 11. Support arm; 12. Heat dissipation copper substrate; 13. Housing; 14. Signal terminal; 15. First middle layer DBC substrate; 16. Second middle layer DBC substrate. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0035] Combine the following Figures 1 to 4 , describing an embodiment of the present invention.

[0036] According to an embodiment of the present invention, an H-bridge structure stacked DBC power module is provided. Specifically, the power module that can be used for 1200V250A includes:

[0037] The bottom DBC substrate 1 has an upper bridge arm chip 2 connected to its upper surface. Optionally, the bottom layer of the upper bridge arm chip 2 may be welded to the bottom DBC substrate 1.

[0038] The middle DBC substrate 3 is arranged on the upper surface of the bottom DBC substrate 1, and the upper surface of the middle DBC substrate 3 is connected with the lower bridge arm chip 4. Optionally, the bottom layer of the lower bridge arm chip 4 can be welded on the middle DBC substrate 3;

[0039] An upper DBC substrate 5 is arranged on the upper surface of the middle DBC substrate 3 , and the upper DBC substrate 5 is provided with four gate electrodes 6 ;

[0040] The middle DBC substrate 3 is formed by combining a first middle DBC substrate 15 and a second middle DBC substrate 16, wherein two groups of lower bridge arm chips 4 are respectively arranged on the first middle DBC substrate 15 and the second middle DBC substrate 16;

[0041] Among them, the stacked DBC technology is an advanced power module packaging technology. It achieves comprehensive optimization of the parasitic capacitance and parasitic inductance inside the module by welding two DBC substrates to form a multi-layer structure of "copper-ceramic-copper-copper-ceramic-copper". The multi-layer DBC stacking arrangement can form three to four layers of current transmission paths, which can further reduce the module size and make the structure more compact.

[0042] The upper bridge arm chip 2 and the lower bridge arm chip 4 are both in two groups and are respectively connected to four gates 6. The two groups of upper bridge arm chips 2 are respectively connected to the first middle layer DBC substrate 15 and the second middle layer DBC substrate 16, and the two groups of lower bridge arm chips 4 are respectively connected to the upper layer DBC substrate 5. Both the upper bridge arm chip 2 and the lower bridge arm chip 4 can be SiC chips. In order to meet the application requirements of high power, as well as low stray, low cost, low thermal resistance and maintain the high efficiency and high-speed switching characteristics of SiC MOSFET, the present application proposes an H-bridge packaged SiC power module using stacked DBC technology. Through compact chip layout and sequential arrangement, the overall size of the power module is reduced, the power density is improved, a shorter commutation circuit is achieved, and the parasitic inductance of the commutation circuit inside the module is reduced.

[0043] By forming a multi-layer DBC stacking arrangement through the bottom DBC substrate 1, the middle DBC substrate 3 and the upper DBC substrate 5, a double-layer to triple-layer current transmission path can be formed, which can further reduce the module size and make the structure more compact. Compared with the existing H-bridge packaging structure, in the multi-layer DBC structure of the present application, the multi-layer current flow forms mutual inductance cancellation, which can effectively reduce the stray inductance of the power module, reduce voltage spikes, enhance the electrical characteristics, thermal characteristics, heat dissipation capacity and current flow capacity of the power module, and effectively improve the power density of the module.

[0044] In one embodiment, the end side of the bottom DBC substrate 1 is connected with a DC positive terminal 7, the end side of the upper DBC substrate 5 is connected with a DC negative terminal 8, and the end side of the middle DBC substrate 3 is connected with a first AC terminal 9 and a second AC terminal 10; the first AC terminal 9 and the second AC terminal 10 are respectively connected to the first middle DBC substrate 15 and the second middle DBC substrate 16. The DC positive terminal 7 can be connected to the positive pole of the power supply to provide a positive voltage for the circuit, and the DC negative terminal 8 can be connected to the negative pole of the power supply to form a circuit loop. The first AC terminal 9 and the second AC terminal 10 can be used to connect an AC load to provide an AC output. Among them, the first middle DBC substrate 15 can be set on the left side, connected to the first AC terminal 9, and corresponding to the DC positive terminal 7; the second middle DBC substrate 16 can be set on the right side, connected to the second AC terminal 10, and corresponding to the DC negative terminal 8. That is, the first AC terminal 9 and the DC positive terminal 7 are set at a relatively left position, and the second AC terminal 10 and the DC negative terminal 8 are set at a relatively right position.

[0045] The DC positive terminal 7 and the DC negative terminal 8 are on the same side, and the first AC terminal 9 and the second AC terminal 10 are respectively arranged on the opposite sides of the DC positive terminal 7. This can make the layout of the terminals more reasonable and compact, saving the occupied space.

[0046] in, Figure 1 is a circuit diagram of a power module, D1 is the positive electrode of the power module, S2 is the negative electrode of the power module, S1 / D2 is the first AC terminal 9 of the power module, S3 / D4 is the second AC terminal 10 of the power module, G1 and G3 are the upper bridge arm gates 6, and G2 and G4 are the lower bridge arm gates 6.

[0047] In one embodiment, the middle DBC substrate 3 is provided with a through hole, and the upper bridge arm chip 2 is located in the through hole;

[0048] The upper DBC substrate 5 is provided with two arms 11, and the upper DBC substrate 5 can be regarded as a gate-shaped structure, and four gates 6 are provided on the upper surfaces of the two arms 11, and the upper bridge arm chip 2 and the lower bridge arm chip 4 are both located between the two arms 11. The distribution of the upper bridge arm chip 2 and the lower bridge arm chip 4 can be made more compact, and the space can be used reasonably. While meeting the continuous demand, the space occupied by the upper bridge arm chip 2 and the lower bridge arm chip 4 is reduced by using the space stacking method.

[0049] The bottom DBC substrate 1 , the first middle DBC substrate 15 , the second middle DBC substrate 16 , the upper DBC substrate 5 and the gate 6 constitute a stacked DBC structure. The upper DBC substrate 5 is provided with two arms 11 and also has a connection portion for connecting the two arms 11 .

[0050] In one embodiment, the upper surface of the upper bridge arm chip 2 and the upper surface of the middle DBC substrate 3, the upper surface of the upper bridge arm chip 2 and the upper surface of the lower bridge arm chip 4 and the upper surface of the gate 6, and the upper surface of the lower bridge arm chip 4 and the upper surface of the upper DBC substrate 5 are all connected by bonding wires, which can increase the flexibility of the connection design and the degree of freedom of the design.

[0051] In one embodiment, the upper bridge arm chip 2 and the lower bridge arm chip 4 are respectively arranged between four gates 6. This can make the upper bridge arm chip 2 and the lower bridge arm chip 4 more compact, reduce the overall size of the power module, and improve the power density.

[0052] In one embodiment, the upper bridge arm chip 2 and the lower bridge arm chip 4 are symmetrically distributed, and the upper bridge arm chip 2 is close to the first AC terminal 9 , and the lower bridge arm chip 4 is close to the DC positive terminal 7 .

[0053] In one embodiment, the two arms 11 of the upper DBC substrate 5 are symmetrically distributed.

[0054] In one embodiment, the distribution symmetry axes of the upper bridge arm chip 2 and the lower bridge arm chip 4 coincide with the distribution symmetry axes of the two arms 11 of the upper DBC substrate 5 .

[0055] The symmetrically distributed layout can reduce wiring complexity, simplify the manufacturing and assembly process, and improve production efficiency and reliability. It is also convenient to coordinate the working states of each upper bridge arm chip 2 and lower bridge arm chip 4, ensuring stability and consistency under different working conditions, and enhancing the overall performance of the system.

[0056] For details, please refer to the attached Figure 2 and attached Figure 3, the upper bridge arm chips 2 and the lower bridge arm chips 4 are six each, each group of upper bridge arm chips 2 is three and connected in parallel, each group of lower bridge arm chips 4 is also three and connected in parallel, wherein, each branch arm 11 is respectively provided with an upper bridge arm gate 6 and a lower bridge arm gate 6, and the upper bridge arm gate 6 is close to the AC terminal side, and the lower bridge arm gate 6 is close to the DC positive and negative terminals side, and there is a gap between the upper bridge arm gate 6 and the lower bridge arm gate 6, and the two groups of upper bridge arm chips 2 and the two groups of lower bridge arm chips 4 are symmetrically distributed, and the distribution symmetry axis is the division axis of the two branches 11 The symmetry axis is arranged along the extension direction of the support arm 11, that is, from top to bottom, is regarded as the first direction and the positive direction, and the direction perpendicular to the first direction is regarded as the second direction, wherein the positive direction is from left to right, then along the positive direction of the first direction, each group of upper bridge arm chips 2 is distributed as 1*2 and arranged in two rows, and each group of lower bridge arm chips 4 is distributed as 2*1 and arranged in two rows, and the two lower bridge arm chips 4 in the second row of the two groups of lower bridge arm chips 4 are respectively located on both sides of the two upper bridge arm chips 2 in the first row of the two groups of upper bridge arm chips 2, and there is a gap between the upper bridge arm chip 2 and the lower bridge arm chip 4. The two upper bridge arm gates 6 on the two arms 11 are respectively connected to the three upper bridge arm chips 2 in the two groups, and one upper bridge arm gate 6 controls the three upper bridge arm chips 2 in each group at the same time, for example, when the upper bridge arm gate 6 is at a high level, the three upper bridge arm chips 2 are connected at the same time, and when the upper bridge arm gate 6 is at a low level, the three upper bridge arm chips 2 are disconnected at the same time; the two lower bridge arm gates 6 under the two arms 11 are respectively connected to the three lower bridge arm chips 4 in the two groups, and one lower bridge arm gate 6 controls the three lower bridge arm chips 4 in each group at the same time, for example, when the lower bridge arm gate 6 is at a high level, the three lower bridge arm chips 4 are connected at the same time, and when the lower bridge arm gate 6 is at a low level, the three lower bridge arm chips 4 are disconnected at the same time. When the lower bridge arm chip 4 is connected to the upper DBC substrate 5, it can be adopted that: two lower bridge arm chips 4 located on both sides of the upper bridge arm chip 2 are connected to the arms 11 of the upper DBC substrate 5, and the specific position can be the part between the upper bridge arm gate 6 and the lower bridge arm gate 6 of the same arm 11. The remaining lower bridge arm chips 4 may be connected to the connection portion of the upper DBC substrate 5 .

[0057] In one embodiment, it further includes:

[0058] The heat dissipation copper substrate 12 is arranged on the lower surface of the bottom DBC substrate 1; it can dissipate heat for the entire laminated structure, keep the temperature of the power module stable during operation, and prevent overheating.

[0059] The housing 13 is disposed on the upper surface of the heat dissipation copper substrate 12, and the bottom DBC substrate 1, the middle DBC substrate 3 and the upper DBC substrate 5 are all located inside the housing 13. The housing 13 can protect the bottom DBC substrate 1, the middle DBC substrate 3 and the upper DBC substrate 5.

[0060] In one embodiment, it further includes:

[0061] There are multiple signal terminals 14, which are respectively arranged on the four gates 6 and the two arms 11. They can be used to transmit control signals or feedback signals in the H-bridge power module.

[0062] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the appended claims.

Claims

1. An H-bridge structured laminated DBC power module, characterized in that: include: A bottom DBC substrate (1), the upper surface of which is connected to an upper bridge arm chip (2); A middle-layer DBC substrate (3) is arranged on the upper surface of the bottom-layer DBC substrate (1), and a lower bridge arm chip (4) is connected to the upper surface of the middle-layer DBC substrate (3); An upper DBC substrate (5) is arranged on the upper surface of the middle DBC substrate (3), and the upper DBC substrate (5) is provided with four gate electrodes (6); The middle-layer DBC substrate (3) is formed by combining a first middle-layer DBC substrate (15) and a second middle-layer DBC substrate (16), wherein two groups of lower bridge arm chips (4) are respectively arranged on the first middle-layer DBC substrate (15) and the second middle-layer DBC substrate (16); The upper bridge arm chips (2) and the lower bridge arm chips (4) are each in two groups and are respectively connected to four gate electrodes (6); the two groups of upper bridge arm chips (2) are respectively connected to a first middle-layer DBC substrate (15) and a second middle-layer DBC substrate (16); and the two groups of lower bridge arm chips (4) are respectively connected to an upper-layer DBC substrate (5).

2. The H-bridge structure stacked DBC power module according to claim 1, characterized in that: The end side of the bottom DBC substrate (1) is connected to a DC positive terminal (7), the end side of the upper DBC substrate (5) is connected to a DC negative terminal (8), and the end side of the middle DBC substrate (3) is connected to a first AC terminal (9) and a second AC terminal (10); The DC positive terminal (7) and the DC negative terminal (8) are on the same side, and the first AC terminal (9) and the second AC terminal (10) are respectively arranged on opposite sides of the DC positive terminal (7).

3. The H-bridge structure stacked DBC power module according to claim 1, characterized in that: The middle-layer DBC substrate (3) is provided with a through hole, and the upper bridge arm chip (2) is located in the through hole; The upper DBC substrate (5) is provided with two supporting arms (11), four gate electrodes (6) are arranged on the upper surfaces of the two supporting arms (11), and the upper bridge arm chip (2) and the lower bridge arm chip (4) are both located between the two supporting arms (11).

4. The H-bridge structure stacked DBC power module according to claim 1, characterized in that: The upper surface of the upper bridge arm chip (2) and the upper surface of the middle DBC substrate (3), the upper surface of the upper bridge arm chip (2) and the upper surface of the lower bridge arm chip (4) and the upper surface of the gate (6), and the upper surface of the lower bridge arm chip (4) and the upper surface of the upper DBC substrate (5) are all connected via bonding wires.

5. The H-bridge structure stacked DBC power module according to claim 1, characterized in that: The upper bridge arm chip (2) and the lower bridge arm chip (4) are respectively arranged between four gate electrodes (6).

6. The H-bridge structure stacked DBC power module according to claim 2, characterized in that: The upper bridge arm chip (2) and the lower bridge arm chip (4) are both symmetrically distributed, and the upper bridge arm chip (2) is close to one side of the first AC terminal (9), and the lower bridge arm chip (4) is close to one side of the DC positive terminal (7).

7. The H-bridge structure stacked DBC power module according to claim 3, characterized in that: The two supporting arms (11) of the upper DBC substrate (5) are symmetrically distributed.

8. The H-bridge structure stacked DBC power module according to claim 3, characterized in that: The distribution symmetry axes of the upper bridge arm chip (2) and the lower bridge arm chip (4) coincide with the distribution symmetry axes of the two supporting arms (11) of the upper DBC substrate (5).

9. The H-bridge structure stacked DBC power module according to claim 1, characterized in that: Also includes: A heat dissipation copper substrate (12) arranged on the lower surface of the bottom DBC substrate (1); The outer shell (13) is arranged on the upper surface of the heat dissipation copper substrate (12), and the bottom layer DBC substrate (1), the middle layer DBC substrate (3) and the upper layer DBC substrate (5) are all located on the inner side of the outer shell (13).

10. The H-bridge structure stacked DBC power module according to claim 3, characterized in that: Also includes: There are a plurality of signal terminals (14), which are respectively arranged on the four gates (6) and the two arms (11).

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