Semiconductor assembly and semiconductor assembly structure
By designing the heat dissipation boss structure in semiconductor components, the problem of thermal conductivity glue cracking between the packaging chip and the water-cooled plate is solved, effective heat dissipation of high-power consumption chips is achieved, and the risk of interface separation is avoided.
Patent Information
- Application Number
- CN202411898477.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-20
- Publication Date
- 2025-04-04
AI Technical Summary
The existing problem of the thermal conductivity glue between the package chip and the water-cooled plate cannot effectively dissipate heat.
Design a semiconductor component, including a package chip, heat sink and circuit board. The heat dissipation member is provided with a heat dissipation boss, and its heat dissipation surface is bonded to the bottom of the case and is arranged in the thickness direction corresponding to the chip body. The width of the heat dissipation surface is smaller than the width of the substrate, but not less than the width of the chip body. With this structure, an excessively large contact area between the housing and the heat dissipation member is avoided, and the possibility of thermally conductive glue cracking is reduced.
It effectively avoids the problem of thermal conductivity glue cracking caused by warping of the package chip, ensures the heat dissipation effect of the chip, and reduces the risk of interface separation between the heat dissipation part and the shell.
Smart Images

Figure CN119764268A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor processing technology, and in particular to a semiconductor component and a semiconductor assembly structure. Background Art
[0002] In FCBGA packaging (Flip Chip Ball Grid Array), the electrical connection between the chip body and the substrate adopts the flip chip (FC) installation method. For example, the chip is pasted on the substrate in a flip-chip form, and the packaging technology uses spherical solder (i.e. solder balls) as electrical connection points. It is mainly used in the field of high-density, high-speed, and multi-functional large-scale integrated circuit chip packaging.
[0003] For high-power chip types (for example, automotive FCBGA chips), the packaged chips will warp and deform at high and low temperatures. Since the contact area between the water cooling plate and the packaged chip is large, when the packaged chip warps greatly, it is easy to cause the thermal conductive adhesive between the packaged chip and the water cooling plate to crack, resulting in a sharp increase in thermal resistance and causing the chip to overheat.
[0004] Therefore, for high-power chips with high heat dissipation requirements, how to avoid the inability to effectively dissipate heat for high-power chips due to cracking of the thermal conductive adhesive between the packaged chip and the water cooling plate is a problem that needs to be solved. Summary of the invention
[0005] The technical problem to be solved by the present application is to provide a semiconductor component and a semiconductor assembly structure to solve the existing problem that high power consumption chips cannot be effectively cooled due to cracking of the thermal conductive adhesive between the packaged chip and the water cooling plate.
[0006] According to one aspect of the present invention, there is provided a semiconductor component, comprising: a packaged chip, a heat sink for dissipating heat from the packaged chip, and a circuit board;
[0007] The packaged chip comprises a chip body, a substrate and a shell, the chip body is soldered to the lower surface of the substrate in a flip-chip form and packaged in a space formed by bonding the shell and the substrate, and the packaged chip is bonded to the lower surface of the circuit board through the upper surface of the substrate;
[0008] The heat sink is provided with a heat dissipation boss, the heat dissipation surface of the heat dissipation boss is bonded to the bottom of the shell, the heat dissipation boss is arranged corresponding to the chip body in the thickness direction, and the width of the heat dissipation surface is smaller than the width of the substrate and not smaller than the width of the chip body.
[0009] In some embodiments, the shape of the heat dissipation surface includes a rectangular structure with chamfered or arc-shaped edges.
[0010] In some embodiments, the missing size of the chamfered or arc-shaped rectangular-like structure compared to the rectangular structure is larger than a preset threshold.
[0011] In some embodiments, the heat dissipation boss is a stepped structure, the heat dissipation surface is located at the top of the stepped structure and is bonded to the bottom of the shell by thermal conductive adhesive, and the stepped surface of the stepped structure is used to accommodate the thermal conductive adhesive overflowing between the heat dissipation surface and the shell.
[0012] In some embodiments, the size of the step surface and the distance between the step surface and the housing match the amount of the overflowed thermal conductive adhesive.
[0013] According to another aspect of the present invention, there is provided a semiconductor assembly structure, comprising: a pressure support, a plurality of receiving members, and a semiconductor component as described above; the pressure support is arranged on the upper surface of the circuit board, the pressure support comprises a pressure portion located at the center thereof and a plurality of elastic portions located at the edge thereof and fixedly connected to or integrally formed with the pressure portion; the pressure portion corresponds to the position of the packaged chip, and the receiving member corresponds to the position of the elastic portion; one end of the receiving member is fixedly connected to the heat sink, and the other end of the receiving member passes through the circuit board, the elastic portion is cooperatively connected with the other end of the receiving member passing through the circuit board and generates an elastic restoring force, and the pressure portion applies pressure toward the heat sink to the circuit board in order to overcome the elastic restoring force of the plurality of elastic portions, so as to make the packaged chip fit the heat sink.
[0014] In some embodiments, the pressure portion includes at least one group of symmetrically arranged pressure points or pressure surfaces for contacting the circuit board, and the distance between the symmetrically arranged pressure points or pressure surfaces is greater than the width of the heat dissipation surface and less than the width of the substrate.
[0015] In some embodiments, the pressure-applying portion is a hollow annular structure, and the pressure-applying point or pressure-applying surface is disposed at the inner circumferential edge of the annular structure.
[0016] In some embodiments, the elastic portion includes an elastic foot that is warped by a predetermined amplitude relative to the pressure portion and away from the circuit board, and the elastic foot is cooperatively connected to the other end of the receiving member passing through the circuit board to generate the elastic restoring force.
[0017] In some embodiments, the elastic support leg is provided with a U-shaped opening, and the receiving member includes a snap-on end cover, and the snap-on end cover passes through the U-shaped opening and is snap-on connected to the elastic support leg.
[0018] Compared with the prior art, this application has the following advantages:
[0019] The semiconductor component provided in the embodiment of the present application includes a packaged chip, a heat sink for dissipating heat for the packaged chip, and a circuit board; the packaged chip includes a chip body, a substrate and a shell, the chip body is soldered to the lower surface of the substrate in a flip-chip manner and is packaged in a space formed by bonding the shell and the substrate, and the packaged chip is bonded to the lower surface of the circuit board through the upper surface of the substrate; the heat sink is provided with a heat dissipation boss, the heat dissipation surface of the heat dissipation boss is bonded to the bottom of the shell, the heat dissipation boss and the chip body are arranged correspondingly in the thickness direction, and the width of the heat dissipation surface is smaller than the width of the substrate and not smaller than the width of the chip body. The semiconductor component is provided with a heat dissipation boss. Since the heat dissipation boss corresponds to the position of the chip body in the thickness direction and the width of the heat dissipation surface is smaller than the width of the substrate and not smaller than the width of the chip body, it can effectively dissipate the heat in the main heat generating area while avoiding excessive contact area between the shell and the heat sink. In this case, even if the packaged chip warps, the contact area with the heat sink is small, so the problem of thermal conductive adhesive cracking is not likely to occur between the two. While ensuring the heat dissipation effect of the packaged chip, it can avoid interface separation between the heat sink and the shell caused by chip warping due to excessive contact area between the heat sink and the shell.
[0020] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the following specifically cites the preferred embodiments and describes them in detail with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 is a schematic structural diagram of a semiconductor component provided in an embodiment of the present application;
[0022] Figure 2 is another structural schematic diagram of a semiconductor component provided in an embodiment of the present application;
[0023] Figure 3 It is a schematic diagram of a semiconductor assembly structure provided in an embodiment of the present application.
[0024] Notes on the attached drawings:
[0025] 1 semiconductor component, 11 packaged chip, 111 chip body, 112 substrate, 113 housing, 12 heat sink, 121 heat dissipation boss, 122 heat dissipation surface, 123 step surface, 13 circuit board, 2 pressure bracket, 21 pressure part, 211 pressure point (pressure surface), 22 elastic part, 221 elastic support foot, 3 receiving part, 31 clamping end cover DETAILED DESCRIPTION
[0026] Many specific details are described in the following description to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar generalizations without violating the connotation of the present application, so the present application is not limited by the specific implementation disclosed below.
[0027] The terms used in one or more embodiments of this specification are only for the purpose of describing specific embodiments, and are not intended to limit one or more embodiments of this specification. The singular forms of "a", "said" and "the" used in one or more embodiments of this specification and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used in one or more embodiments of this specification refers to and includes any or all possible combinations of one or more associated listed items.
[0028] It should be understood that although the terms first, second, etc. may be used to describe various information in one or more embodiments of this specification, this information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other. For example, without departing from the scope of one or more embodiments of this specification, the first may also be referred to as the second, and similarly, the second may also be referred to as the first. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".
[0029] In the field of semiconductor processing technology, in order to avoid the failure of effective heat dissipation of high-power chips due to cracking of the thermal conductive adhesive between the packaged chip and the water-cooling plate, the present application embodiment provides a semiconductor component and a semiconductor assembly structure, please refer to Figure 1-Figure 3 To understand this embodiment, Figure 1 is a schematic structural diagram of a semiconductor component provided in this embodiment; Figure 2 is another structural schematic diagram of a semiconductor component provided in an embodiment of the present application; Figure 3 It is a schematic diagram of a semiconductor assembly structure provided in an embodiment of the present application.
[0030] like Figure 1As shown, the semiconductor component 1 provided in this embodiment includes a packaged chip 11, a heat sink 12 for dissipating heat for the packaged chip 11, and a circuit board 13; the packaged chip 11 includes a chip body 111, a substrate 112 and a shell 113, the chip body 111 is soldered to the lower surface of the substrate 112 in a flip-chip form, and is packaged in a space formed by bonding the shell 113 and the substrate 112, and the packaged chip 11 is bonded to the lower surface of the circuit board 13 through the upper surface of the substrate 112; the shell 113 is a copper shell with a preset thickness; the heat sink 12 can be A water-cooled plate or other heat dissipation device or component is provided with a heat dissipation boss 121, and a heat dissipation surface 122 of the heat dissipation boss 121 is bonded to the bottom of the shell 113. The heat dissipation boss 121 and the chip body 111 are arranged correspondingly in the thickness direction, that is, the heat dissipation boss 121 and the chip body 111 correspond to the same central axis. In this embodiment, the width of the heat dissipation surface 122 of the heat dissipation boss 121 is smaller than the width of the substrate 112 and not smaller than the width of the chip body 111. For example, the size of the heat dissipation surface 122 can be equal to or slightly larger than the size of the chip body 111.
[0031] Since the above-mentioned heat dissipation boss 121 corresponds to the position of the chip body 111 in the thickness direction, and the width of the heat dissipation surface 122 is smaller than the width of the substrate 112 and not smaller than the width of the chip body 111, it is possible to effectively dissipate the heat in the main heat generating area while avoiding excessive contact area between the shell 113 and the heat sink 12. In this case, even if the packaged chip 11 warps, due to the small contact area with the heat sink 12, the problem of thermal conductive adhesive cracking is not likely to occur between the two. While ensuring the heat dissipation effect of the packaged chip 11, it is possible to avoid interface separation between the heat sink 12 and the shell 113 caused by chip warping due to excessive contact area between the heat sink 12 and the shell 113.
[0032] Since the heat dissipation adhesive is more likely to crack at the end corners of the right-angled area, in this embodiment, the shape of the heat dissipation surface 122 can be set to a rectangular structure with chamfered or arc-shaped edges (not shown in the figure). For example, the rectangular structure can be formed by cutting off a right-angled area of a predetermined size from a rectangle or square corresponding to the shape of the chip body 111, and the missing size of the chamfered or arc-shaped rectangular structure must be greater than a preset threshold value compared to the rectangular structure to further avoid interface separation between the heat sink 12 and the shell 113.
[0033] Compared with the existing bonding area between the shell 113 and the heat sink 12 being equal to or larger than the size of the substrate 112, the width of the heat sink surface 122 in this embodiment is smaller than the width of the substrate 112. This structure avoids the interface separation between the heat sink 12 and the shell 113 caused by chip warping due to the excessive contact area between the heat sink 12 and the shell 113, while also simultaneously reducing the heat dissipation area and the bonding area between the shell 113 and the heat sink 12, which may result in partial loss of heat dissipation performance or a reduction in the bonding strength between the two. Therefore, in another preferred structure of the semiconductor component 1 provided in this embodiment, the heat dissipation boss 121 may be set to a stepped structure (such as Figure 2 As shown in the figure, the heat dissipation surface 122 is located at the top of the step structure and is bonded to the bottom of the shell 113 by thermally conductive adhesive. The step surface 123 of the step structure is used to accommodate the thermally conductive adhesive overflowing between the heat dissipation surface 122 and the shell 113. In this way, on the basis of the core heat dissipation area (the area corresponding to the heat dissipation surface 122), an auxiliary heat dissipation area (the area corresponding to the step surface 123) can be added to its peripheral area to achieve stepped heat dissipation and make up for the partial loss of heat dissipation performance caused by the reduction of the heat dissipation area. In addition, based on the above-mentioned improvement of the heat dissipation effect, based on the bonding effect of the overflowed thermally conductive adhesive between the step surface 123 and the shell 113, the influence of the reduction of the bonding area between the shell 113 and the heat sink 12 on the bonding strength can be avoided or reduced.
[0034] In this embodiment, in order to ensure the preset auxiliary heat dissipation effect and auxiliary bonding effect of the step surface 123, the size of the step surface 123 and the distance between it and the shell 113 (i.e., the step height) need to match the amount of overflowed thermal conductive adhesive, so as to avoid the overflowed thermal conductive adhesive from squeezing the packaged chip 11 due to the step height being too low, or to avoid the overflowed thermal conductive adhesive from being unable to achieve the above-mentioned stepped heat dissipation or bonding effect due to the step height being too high.
[0035] In one embodiment, the amount of the above-mentioned thermal conductive adhesive can be pre-set, which can not only meet the thermal conductivity requirements and bonding strength between the heat dissipation surface 122 and the shell 113, but also make the amount of overflowed thermal conductive adhesive meet the above-mentioned stepped heat dissipation requirements and the bonding effect between the stepped surface 123 and the shell 113.
[0036] The semiconductor component 1 provided in this embodiment has a heat dissipation boss 121 that corresponds to the position of the chip body 111 in the thickness direction, and the width of the heat dissipation surface 122 is smaller than the width of the substrate 112 and not smaller than the width of the chip body 111. Therefore, it can effectively dissipate the heat in the main heat generation area while avoiding excessive contact area between the shell 113 and the heat sink 12. In this case, even if the packaged chip 11 is warped, the contact area with the heat sink 12 is small, so the deformation degree of the contact area is relatively small, so the problem of cracking of the thermal conductive adhesive is not easy to occur between the two. While ensuring the heat dissipation effect of the packaged chip 11, it can avoid the interface separation between the heat sink 12 and the shell 113 caused by chip warping due to excessive contact area between the heat sink 12 and the shell 113.
[0037] Another embodiment of the present application provides a semiconductor assembly structure, such as Figure 3 As shown, the semiconductor assembly structure includes: a pressure support 2, a plurality of receiving members 3 and a semiconductor component 1 provided in the above embodiment; the pressure support 2 is arranged on the upper surface of the circuit board 13, and the pressure support 2 includes a pressure portion 21 located at the center thereof and a plurality of elastic portions 22 located at the edge thereof and fixedly connected to or integrally formed with the pressure portion 21; the pressure portion 21 corresponds to the position of the packaged chip 11 located on the lower surface of the circuit board 13 in the chip thickness direction, and the receiving member 3 corresponds to the position and number of the elastic portions 22; one end of the receiving member 3 is fixedly connected to the heat sink 12, and the other end of the receiving member 3 passes through the circuit board 13, the elastic portion 22 is matched and connected with the other end of the receiving member 3 passing through the circuit board 13 and generates an elastic restoring force, and the pressure portion 21 is to overcome the elastic restoring force of the plurality of elastic portions 22 and apply pressure to the circuit board 13 toward the heat sink 12 so that the packaged chip 11 fits the heat sink 12.
[0038] In this embodiment, the pressure portion 21 includes at least one set of symmetrically arranged pressure points or pressure surfaces 211 for contacting the circuit board 13, and the distance between the symmetrically arranged pressure points or pressure surfaces 211 is greater than the width of the heat dissipation surface 122 and less than the width of the substrate 112. Figure 3As shown, the pressure portion 21 is a hollow annular structure, and the pressure point or pressure surface 211 is arranged at the inner circumferential edge of the annular structure. The size of the hollow area is larger than the size of the heat dissipation surface 122 of the heat dissipation boss 121 and smaller than the size of the above-mentioned substrate 112. The elastic parts 22 of the pressure bracket 2 are connected with the corresponding receiving parts 3. Since the distance between the pressure points or pressure surfaces 211 is greater than the width of the heat dissipation surface 122 and smaller than the width of the substrate 112, the force applied by the pressure part 21 to the circuit board 13 in the direction of the heat dissipation boss 121 and the bearing force applied by the heat dissipation boss 121 (heat dissipation surface 122) to the packaged chip 11 (shell 113) in the direction of the circuit board 13 can cooperate with each other, and jointly apply continuous pressure toward each other to the heat dissipation surface 122 of the heat dissipation boss 121 and the shell 113 of the packaged chip 11, so that the bonding part between the two can fit tightly, thereby ensuring the tight fit between the core heat dissipation area (the area of the packaged chip 11 corresponding to the heat dissipation surface 122) and the heat dissipation surface 122 of the heat dissipation boss 121.
[0039] like Figure 3 As shown, the elastic portion 22 includes an elastic leg 221 that is warped by a predetermined amplitude relative to the pressure-applying portion 21 and in a direction away from the circuit board 13. The elastic leg 221 is matched and connected with the other end of the receiving member 3 that passes through the circuit board 13 and generates an elastic restoring force. In this embodiment, the elastic leg 221 is provided with a U-shaped opening, and the receiving member 3 includes a clamping end cover 31, which can be clamped with the elastic leg 221 through the U-shaped opening.
[0040] In the semiconductor assembly structure provided in this embodiment, since the heat dissipation boss 121 corresponds to the position of the chip body 111 in the thickness direction, and the width of the heat dissipation surface 122 is smaller than the width of the substrate 112 and not smaller than the width of the chip body 111, it is possible to effectively dissipate the heat in the main heat generating area while avoiding excessive contact area between the shell 113 and the heat sink 12. Even if the packaged chip 11 is warped, the deformation degree of the contact area is relatively small due to the small contact area with the heat sink 12. Therefore, the problem of cracking of the thermal conductive adhesive is not easy to occur between the two. While ensuring the heat dissipation effect of the packaged chip 11, it is possible to avoid interface separation between the heat sink 12 and the shell 113 caused by chip warping due to excessive contact area between the heat sink 12 and the shell 113. On this basis, each elastic part 22 of the pressure bracket 2 is connected with its corresponding receiving part 3. Since the distance between the pressure points or the pressure surfaces 211 is greater than the width of the heat dissipation surface 122 and smaller than the width of the substrate 112, the force applied by the pressure part 21 to the circuit board 13 in the direction of the heat dissipation boss 121 and the bearing force applied by the heat dissipation boss 121 (heat dissipation surface 122) to the packaged chip 11 (shell 113) in the direction of the circuit board 13 can cooperate with each other, and jointly apply continuous pressure toward each other to the heat dissipation surface 122 of the heat dissipation boss 121 and the shell 113 of the packaged chip 11, so that the bonding part between the two can fit tightly, thereby ensuring the tight fit between the core heat dissipation area (the area of the packaged chip 11 corresponding to the heat dissipation surface 122) and the heat dissipation surface 122 of the heat dissipation boss 121.
[0041] It should be noted that although the present application is disclosed as above in the form of a preferred embodiment, it is not intended to limit the present application. Any technical personnel in this field may make possible changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application shall be based on the scope defined by the claims of the present application.
Claims
1. A semiconductor component, characterized in that: include: A packaged chip, a heat sink for dissipating heat from the packaged chip, and a circuit board; The packaged chip comprises a chip body, a substrate and a shell, the chip body is soldered to the lower surface of the substrate in a flip-chip form and packaged in a space formed by bonding the shell and the substrate, and the packaged chip is bonded to the lower surface of the circuit board through the upper surface of the substrate; The heat sink is provided with a heat dissipation boss, the heat dissipation surface of the heat dissipation boss is bonded to the bottom of the shell, the heat dissipation boss is arranged corresponding to the chip body in the thickness direction, and the width of the heat dissipation surface is smaller than the width of the substrate and not smaller than the width of the chip body.
2. The semiconductor component according to claim 1, characterized in that The shape of the heat dissipation surface includes a rectangular structure with chamfered or arc-shaped edges.
3. The semiconductor component according to claim 2, characterized in that The missing size of the chamfered or arc-shaped rectangular-like structure compared to the rectangular structure is larger than a preset threshold.
4. The semiconductor component according to claim 1, characterized in that The heat dissipation boss is a stepped structure, the heat dissipation surface is located at the top of the stepped structure and is bonded to the bottom of the shell through thermal conductive adhesive, and the stepped surface of the stepped structure is used to accommodate the thermal conductive adhesive overflowing between the heat dissipation surface and the shell.
5. The semiconductor component according to claim 4, characterized in that The size of the step surface and the distance between the step surface and the housing match the amount of the overflowed thermal conductive adhesive.
6. A semiconductor assembly structure, characterized in that: include: A pressure support, a plurality of receiving parts, and a semiconductor component as described in any one of claims 1 to 5; the pressure support is arranged on the upper surface of the circuit board, the pressure support includes a pressure part located at the center thereof and a plurality of elastic parts located at the edge thereof and fixedly connected to or integrally formed with the pressure part; the pressure part corresponds to the position of the packaged chip, and the receiving part corresponds to the position of the elastic part; one end of the receiving part is fixedly connected to the heat sink, and the other end of the receiving part passes through the circuit board, the elastic part is matched and connected with the other end of the receiving part passing through the circuit board and generates an elastic restoring force, and the pressure part applies pressure toward the heat sink to the circuit board in order to overcome the elastic restoring force of the plurality of elastic parts so as to make the packaged chip fit the heat sink.
7. The semiconductor assembly structure according to claim 6, characterized in that: The pressure portion includes at least one group of symmetrically arranged pressure points or pressure surfaces for contacting the circuit board, and the distance between the symmetrically arranged pressure points or pressure surfaces is greater than the width of the heat dissipation surface and less than the width of the substrate.
8. The semiconductor assembly structure according to claim 7, characterized in that: The pressure-applying portion is a hollow annular structure, and the pressure-applying point or pressure-applying surface is arranged at the circumferential edge of the inner ring of the annular structure.
9. The semiconductor assembly structure according to claim 6, characterized in that: The elastic part includes an elastic foot which is warped by a predetermined amplitude relative to the pressure-applying part and away from the circuit board. The elastic foot is cooperatively connected with the other end of the receiving member passing through the circuit board to generate the elastic restoring force.
10. The semiconductor assembly structure according to claim 6, characterized in that: The elastic support leg is provided with a U-shaped opening, and the receiving member comprises a clamping end cover, and the clamping end cover is clamped with the elastic support leg through the U-shaped opening.
Citation Information
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