TGV fan-out packaging structure and manufacturing method thereof

Abstract

The invention relates to a TGV fan-out packaging structure and a manufacturing method thereof. The structure comprises a first substrate in which a through hole and a slot are arranged, and the through hole penetrates through the first substrate; the through hole filler is filled in the through hole; the functional device is arranged in the open slot; a first redistribution layer disposed under the first substrate; the first connection structure is electrically connected with the first redistribution layer; a second redistribution layer disposed over the first substrate; the second connection structure is electrically connected with the second redistribution layer; and the solder ball is arranged on the second connection structure and is electrically connected with the second connection structure. According to the TGV fan-out packaging structure provided by the invention, the functional device is arranged in the glass substrate, so that the packaging thickness is reduced, and the signal transmission rate is increased; by selecting the glass substrate with a proper thermal expansion coefficient value, the warping of the substrate in the packaging process is reduced.

Description

Technical Field

[0001] The present invention relates to the field of packaging technology, and in particular to a TGV fan-out packaging structure and a manufacturing method thereof. Background Art

[0002] In recent years, with the booming development of emerging fields such as 5G, wearable devices, smart phones, automotive electronics, and artificial intelligence, integrated circuit applications have developed towards diversified applications, and advanced three-dimensional packaging technology has gradually become an important means to achieve miniaturization, lightweight, and multifunctionality of electronic products. Three-dimensional packaging mainly stacks bare chips or individually packaged chips together through packaging.

[0003] The existing packaging method is to flip the chip onto the upper surface of the passive adapter board through a silicon-based adapter board, and then mount it on the substrate through the pads or solder balls on the lower surface of the adapter board to form a three-dimensional packaging structure; the bumps on the upper surface of the adapter board can be flipped to mount other functional chips to increase the integration. During the packaging process, due to the difference in thermal expansion coefficients of materials such as plastics, silicon and metals, the volume changes of these materials are not synchronized, which generates stress and causes warping.

[0004] Glass materials have no freely moving electric charges and have excellent dielectric properties. The coefficient of thermal expansion (CTE) of glass materials is highly adjustable. The through glass via (TGV) technology that uses glass to replace silicon materials can control the warping problem during chip packaging. Summary of the invention

[0005] In view of some or all of the problems in the prior art, the present invention provides a TGV fan-out packaging structure, which includes:

[0006] A first substrate, wherein a through hole and a slot are arranged in the first substrate, and the through hole passes through the first substrate;

[0007] A through-hole filler, wherein the through-hole filler is filled in the through-hole;

[0008] A functional device, wherein the functional device is arranged in the slot;

[0009] A first redistribution layer, wherein the first redistribution layer is arranged under the first substrate, the first redistribution layer is electrically connected to the through-hole filler, and the functional device is electrically connected to the first redistribution layer through a pad;

[0010] a first connection structure, the first connection structure being electrically connected to the first redistribution layer;

[0011] a second redistribution layer, the second redistribution layer being arranged on the first substrate, the second redistribution layer being electrically connected to the through-hole filler;

[0012] a second connection structure, the second connection structure being electrically connected to the second redistribution layer;

[0013] A solder ball is arranged on the second connection structure and electrically connected to the second connection structure.

[0014] Furthermore, the first substrate is made of glass or ceramic.

[0015] Furthermore, the material of the through-hole filling is one of copper, tungsten, aluminum, silver, titanium, or a combination thereof.

[0016] Further, the functional device includes a chip module;

[0017] The chip module includes a plurality of identical chips, or a plurality of chips of the same type, or a plurality of chips of different types.

[0018] Furthermore, the first redistribution layer includes a plurality of dielectric layers and a plurality of metal layers; and / or

[0019] The second redistribution layer includes a plurality of dielectric layers and a plurality of metal layers.

[0020] Furthermore, the first connection structure is an under bump metallization structure; and / or

[0021] The second connection structure is an under bump metallization structure.

[0022] The present invention also provides a method for manufacturing a TGV fan-out packaging structure, the method comprising the following steps:

[0023] Making a through hole on the first surface of the first substrate and filling the through hole with a through hole filler;

[0024] Making a groove on the first surface of the first substrate, and arranging a functional device in the groove;

[0025] Fabricate a first redistribution layer and a first connection structure on a first surface of the first substrate;

[0026] Bonding a second substrate to the surfaces of the first redistribution layer and the first connection structure, thinning the second surface of the first substrate to expose the through-hole filler;

[0027] Fabricate a second redistribution layer and a second connection structure on the second surface of the first substrate, and arrange solder balls on the second connection structure;

[0028] The bonding is removed and the second substrate is removed to form a TGV fan-out packaging structure.

[0029] Further, the through hole and the groove are made by using a laser etching process; and / or

[0030] The through-hole filling is produced using physical vapor deposition or electroplating.

[0031] Furthermore, the second surface of the first substrate is thinned by using a mechanical grinding process, a wet etching process, a dry etching process, or a laser etching process.

[0032] Furthermore, the material of the first substrate is glass or ceramic; and / or

[0033] The thermal expansion coefficient of the second substrate is the same as that of the first substrate, and the material of the second substrate is glass or ceramic.

[0034] The technical solution provided by the present invention has the following beneficial effects:

[0035] 1. The TGV fan-out packaging structure provided by the present invention arranges functional devices inside the glass substrate, reduces the packaging thickness and packaging volume, and increases the signal transmission rate.

[0036] 2. The TGV fan-out packaging structure provided by the present invention uses a glass adapter plate structure. The mechanical strength and high temperature resistance of the glass adapter plate are better than those of the traditional silicon-based adapter plate. Even when the thickness of the glass adapter plate is less than 100um, its warping is still small. By selecting a glass substrate with a suitable thermal expansion coefficient value, the stress in the bonding process is reduced, and the warping of the substrate during the packaging process is reduced.

[0037] 3. The TGV fan-out packaging structure provided by the present invention facilitates the electrical connection between the functional devices on the glass adapter board and the main board under the glass adapter board through the TGV electrical connection structure, ensures stable signal transmission, can provide better scalability and can assemble larger chip complexes.

[0038] 4. The TGV fan-out packaging structure provided by the present invention uses glass material, which makes it easier to manufacture large-size ultra-thin adapter boards compared to silicon-based adapter boards. There is no need to deposit an insulating layer, and the manufacturing cost and difficulty are lower. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] To further illustrate the above and other advantages and features of various embodiments of the present invention, a more specific description of various embodiments of the present invention will be presented with reference to the accompanying drawings. It will be understood that these drawings only depict typical embodiments of the present invention and are therefore not to be considered as limiting the scope thereof. In the accompanying drawings, for clarity, identical or corresponding parts will be represented by identical or similar reference numerals.

[0040] Figure 1 A schematic diagram showing a TGV fan-out packaging structure according to an embodiment of the present invention is shown;

[0041] Figure 2 A schematic diagram showing a process of a method for manufacturing a TGV fan-out packaging structure according to an embodiment of the present invention; and

[0042] Figure 3a-3f A cross-sectional schematic diagram of a process for forming a TGV fan-out packaging structure according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0043] In the following description, the present invention is described with reference to various embodiments. However, those skilled in the art will recognize that various embodiments can be implemented without one or more specific details or with other replacement and / or additional methods, materials or components. In other cases, well-known structures, materials or operations are not shown or described in detail to avoid blurring the inventive point of the present invention. Similarly, for the purpose of explanation, specific quantities, materials and configurations are set forth to provide a comprehensive understanding of embodiments of the present invention. However, the present invention is not limited to these specific details. In addition, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn in correct proportions.

[0044] In this specification, reference to "one embodiment" or "the embodiment" means that a particular feature, structure, or characteristic described in conjunction with the embodiment is included in at least one embodiment of the present invention. The phrase "in one embodiment" appearing in various places in this specification does not necessarily all refer to the same embodiment.

[0045] In this specification, unless otherwise specified, "arranged on...", "arranged above..." and "arranged above..." do not exclude the existence of an intermediate between the two. In addition, "arranged on or above..." only indicates the relative positional relationship between two components, and in certain cases, such as after reversing the product direction, it can also be converted into "arranged below or below...", and vice versa.

[0046] In this specification, unless otherwise specified, "first surface" and "second surface" are only used to describe the surfaces of the same component. In addition, "first", "second" and "third" are only used to distinguish and do not include size differences.

[0047] In this specification, unless otherwise specified, "upper surface", "lower surface" and "side surface" are only used to describe and distinguish surfaces of the same component.

[0048] In this specification, unless otherwise specified, the quantifiers "a", "an" do not exclude the presence of a plurality of elements, and the quantifiers "plurality" and "multiple" refer to one or more than one elements.

[0049] It should be noted that the embodiments of the present invention describe the method steps in a specific order, but this is only for the purpose of illustrating the specific embodiment, rather than limiting the order of the steps. On the contrary, in different embodiments of the present invention, the order of the steps can be adjusted according to actual needs.

[0050] In view of the problem of warping of the existing silicon-based adapter board during the packaging process due to the difference in thermal expansion coefficients of materials such as plastic, silicon and metal, the present invention provides a packaging structure using a glass adapter board, a hole is opened on the glass substrate to place a through-hole filler, and a groove is opened on the glass substrate to place a functional device. The thermal expansion coefficient of the glass material is relatively adjustable. The through glass via (TGV) technology that uses glass to replace silicon material can control the warping problem during the chip packaging process.

[0051] The technical solutions in the embodiments of the present invention are described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0052] Figure 1 FIG. 1 is a schematic diagram showing a TGV fan-out packaging structure according to an embodiment of the present invention. Figure 1 As shown, the TGV fan-out packaging structure includes a first substrate 101, a via filler 102, a functional device 103, a pad 104, a first redistribution layer 105, a first connection structure 106, a second redistribution layer 108, a second connection structure 109 and a solder ball 110. Figure 1 As shown, a through hole and a groove are arranged in the first substrate 101, wherein the through hole penetrates the first substrate 101; a through hole filler 102 is filled in the through hole, and a functional device 103 is arranged in the groove. Figure 1 As shown, the first redistribution layer 105 is arranged under the first substrate 101, the first redistribution layer 105 is electrically connected to the through-hole filler 102, the functional device 103 is electrically connected to the first redistribution layer 105 through the pad 104, and the first connection structure 106 is electrically connected to the first redistribution layer 105; the second redistribution layer 108 is arranged above the first substrate 101, the second redistribution layer 108 is electrically connected to the through-hole filler 102, and the second connection structure 109 is electrically connected to the second redistribution layer 108; the solder ball 110 is arranged above the second connection structure 109 and is electrically connected to the second connection structure 109.

[0053] In one embodiment of the present invention, the material of the first substrate 101 may be glass or ceramic.

[0054] In one embodiment of the present invention, the material of the via filler 102 is one of copper, tungsten, aluminum, silver, titanium, or a combination thereof.

[0055] In one embodiment of the present invention, the functional device 103 may include a chip module or other functional devices such as a sensor or a piezoelectric device. In one embodiment of the present invention, the chip module includes a plurality of identical chips, or a plurality of chips of the same type, or a plurality of chips of different types. In one embodiment of the present invention, the chip may be a logic chip such as a CPU, DSP, GPU, FPGA, or a storage chip such as a DRAM, Flash, HBM, or other types of chips or sensors such as SoC (such as MEMS sensors, etc.). In one embodiment of the present invention, the material of the pad 104 may be pure metals such as Au, Cu, Sn, In, or alloys such as Pb-Sn, Au-Sn, Ag-Sn, Sn-Cu, Ag-Sn-Cu, etc.

[0056] In one embodiment of the present invention, the first redistribution layer 105 may include multiple dielectric layers and multiple metal layers; and / or the second redistribution layer 108 may also include multiple dielectric layers and multiple metal layers. In one embodiment of the present invention, the dielectric layer may be an organic material such as polyimide (PI), FR-4, BT resin, or an inorganic material such as SiOx, SiNx; the metal material of the metal layer is preferably one of copper, tungsten, aluminum, copper alloy, titanium, or a combination thereof.

[0057] In one embodiment of the present invention, the first connection structure 106 may be an under bump metallization structure; and / or the second connection structure 109 may be an under bump metallization structure. The material of the under bump metallization structure (UBM) may be Ti / Cu or Ti / Cu / Ni / Cu or Ti / Cu / Ni / Au, etc.

[0058] In one embodiment of the present invention, the material of the solder ball 110 may be a single layer of metal such as copper, nickel, tin, silver or other metals, or a composite metal.

[0059] Figure 2 A schematic flow chart of a method for manufacturing a TGV fan-out packaging structure according to an embodiment of the present invention is shown. Figure 3a-3f A schematic cross-sectional diagram of a process for forming a TGV fan-out packaging structure according to an embodiment of the present invention is shown. Figure 2 and Figure 3a-3f A method for manufacturing a TGV fan-out packaging structure provided by the present invention is described.

[0060] First, a through hole is made on the first surface of the first substrate 101, and a through hole filler 102 is filled in the through hole. Figure 3aAs shown. In one embodiment of the present invention, the material of the first substrate 101 can be glass or ceramic. In one embodiment of the present invention, the through hole is made by laser etching process, and the through hole filler is made by physical vapor deposition or electroplating. In one embodiment of the present invention, the material of the through hole filler 102 is one of copper, tungsten, aluminum, silver, titanium or a combination thereof.

[0061] Next, a groove is made on the first surface of the first substrate 101, and a functional device 103 is arranged in the groove, such as Figure 3b As shown. In one embodiment of the present invention, the slot is made using a laser etching process. In one embodiment of the present invention, the functional device 103 may include a chip module or other functional devices such as a sensor or a piezoelectric device. In one embodiment of the present invention, the chip module includes a plurality of identical chips, or a plurality of chips of the same type, or a plurality of chips of different types. In one embodiment of the present invention, the chip may be a logic chip such as a CPU, DSP, GPU, FPGA, or a storage chip such as a DRAM, Flash, HBM, or other types of chips or sensors such as SoC (such as MEMS sensors, etc.). In one embodiment of the present invention, the material of the pad 104 may be pure metals such as Au, Cu, Sn, In, or alloys such as Pb-Sn, Au-Sn, Ag-Sn, Sn-Cu, Ag-Sn-Cu, etc.

[0062] Next, a first redistribution layer 105 and a first connection structure 106 are fabricated on the first surface of the first substrate 101. Figure 3c As shown. The first redistribution layer 105 is electrically connected to the through-hole filler 102, the functional device 103 is electrically connected to the first redistribution layer 105 through the pad 104, and the first connection structure 106 is electrically connected to the first redistribution layer 105. In one embodiment of the present invention, the first redistribution layer 105 may include multiple dielectric layers and multiple metal layers; the dielectric layer may be an organic material such as polyimide, FR-4, BT resin, or an inorganic material such as SiOx, SiNx; the metal material of the metal layer is preferably one of copper, tungsten, aluminum, copper alloy, titanium, or a combination thereof. In one embodiment of the present invention, the first connection structure 106 may be an under-bump metallization structure; the material of the under-bump metallization structure may be Ti / Cu or Ti / Cu / Ni / Cu or Ti / Cu / Ni / Au, etc.

[0063] Next, the second substrate 107 is bonded to the surface of the first redistribution layer 105 and the first connection structure 106, and the second surface of the first substrate 101 is thinned to expose the through-hole filler 102. Figure 3dIn one embodiment of the present invention, the thermal expansion coefficient of the second substrate 107 is the same as or similar to that of the first substrate 101, and the material of the second substrate 107 can be glass or ceramic. In one embodiment of the present invention, the second surface of the first substrate 101 is thinned by a mechanical grinding process, a wet etching process, a dry etching process, or a laser etching process.

[0064] Next, a second redistribution layer 108 and a second connection structure 109 are fabricated on the second surface of the first substrate 101, and solder balls 110 are arranged on the second connection structure 109. Figure 3e As shown. The second redistribution layer 108 is electrically connected to the through-hole filler 102, and the second connection structure 109 is electrically connected to the second redistribution layer 108; the solder ball 110 is electrically connected to the second connection structure 109. In one embodiment of the present invention, the second redistribution layer 108 may include multiple dielectric layers and multiple metal layers; the dielectric layer may be an organic material such as polyimide, FR-4, BT resin, or an inorganic material such as SiOx, SiNx; the metal material of the metal layer is preferably one of copper, tungsten, aluminum, copper alloy, titanium, or a combination thereof. In one embodiment of the present invention, the second connection structure 109 may be an under-bump metallization structure; the material of the under-bump metallization structure may be Ti / Cu or Ti / Cu / Ni / Cu or Ti / Cu / Ni / Au, etc. In one embodiment of the present invention, the material of the solder ball 110 may be a single-layer metal such as copper, nickel, tin, silver or other metals, or a composite metal.

[0065] Finally, the bonding is removed and the second substrate 107 is removed to form a TGV fan-out packaging structure. Figure 3f In one embodiment of the present invention, the second substrate 107 may be removed by mechanical separation, thermal sliding, or laser separation.

[0066] The TGV fan-out packaging structure provided by the present invention arranges functional devices inside the glass substrate, reduces the packaging thickness and packaging volume, and increases the signal transmission rate; uses a glass adapter plate structure, the mechanical strength and high temperature resistance of the glass adapter plate are better than those of the traditional silicon-based adapter plate, and by selecting a glass substrate with a suitable thermal expansion coefficient value, the stress in the bonding process is reduced, and the warping of the substrate in the packaging process is reduced; it is convenient to electrically connect the functional devices on the glass adapter plate with the main board under the glass adapter plate through the TGV electrical connection structure, ensuring stable signal transmission, providing better scalability and being able to assemble larger chip complexes; the glass material makes it easier to manufacture large-size ultra-thin adapter plates than silicon-based adapter plates, without the need to deposit an insulating layer, and the manufacturing cost and difficulty are lower.

[0067] Although various embodiments of the present invention are described above, it should be understood that they are presented as examples only and not as limitations. It is obvious to those skilled in the relevant art that various combinations, modifications and changes can be made thereto without departing from the spirit and scope of the present invention. Therefore, the breadth and scope of the present invention disclosed herein should not be limited by the exemplary embodiments disclosed above, but should only be defined according to the attached claims and their equivalents.

Claims

1. A TGV fan-out packaging structure, characterized in that: include: A first substrate, wherein a through hole and a slot are arranged in the first substrate, and the through hole passes through the first substrate; A through-hole filler, wherein the through-hole filler is filled in the through-hole; A functional device, wherein the functional device is arranged in the slot; A first redistribution layer, wherein the first redistribution layer is arranged under the first substrate, the first redistribution layer is electrically connected to the through-hole filler, and the functional device is electrically connected to the first redistribution layer through a pad; a first connection structure, the first connection structure being electrically connected to the first redistribution layer; a second redistribution layer, the second redistribution layer being arranged on the first substrate, the second redistribution layer being electrically connected to the through-hole filler; a second connection structure, the second connection structure being electrically connected to the second redistribution layer; A solder ball is arranged on the second connection structure and electrically connected to the second connection structure.

2. The TGV fan-out packaging structure according to claim 1, characterized in that: The first substrate is made of glass or ceramic.

3. The TGV fan-out packaging structure according to claim 1, characterized in that: The material of the through hole filling is one of copper, tungsten, aluminum, silver, titanium or a combination thereof.

4. The TGV fan-out packaging structure according to claim 1, characterized in that: The functional device includes a chip module; The chip module includes a plurality of identical chips, or a plurality of chips of the same type, or a plurality of chips of different types.

5. The TGV fan-out packaging structure according to claim 1, characterized in that: The first redistribution layer includes a plurality of dielectric layers and a plurality of metal layers; and / or The second redistribution layer includes a plurality of dielectric layers and a plurality of metal layers.

6. The TGV fan-out packaging structure according to claim 1, characterized in that: The first connection structure is an under bump metallization structure; and / or The second connection structure is an under bump metallization structure.

7. A method for manufacturing a TGV fan-out packaging structure according to any one of claims 1 to 6, characterized in that: The steps include: Making a through hole on the first surface of the first substrate and filling the through hole with a through hole filler; Making a groove on the first surface of the first substrate, and arranging a functional device in the groove; Fabricate a first redistribution layer and a first connection structure on a first surface of the first substrate; Bonding a second substrate to the surfaces of the first redistribution layer and the first connection structure, thinning the second surface of the first substrate to expose the through-hole filler; Fabricate a second redistribution layer and a second connection structure on the second surface of the first substrate, and arrange solder balls on the second connection structure; The bonding is removed and the second substrate is removed to form a TGV fan-out packaging structure.

8. The method for manufacturing the TGV fan-out packaging structure according to claim 7, characterized in that: Using laser etching process to make the through hole and the groove; and / or The through-hole filling is produced using physical vapor deposition or electroplating.

9. The method for manufacturing the TGV fan-out packaging structure according to claim 7, characterized in that: The second surface of the first substrate is thinned by using a mechanical grinding process, a wet etching process, a dry etching process, or a laser etching process.

10. The method for manufacturing the TGV fan-out packaging structure according to claim 7, characterized in that: The material of the first substrate is glass or ceramic; and / or The thermal expansion coefficient of the second substrate is the same as that of the first substrate, and the material of the second substrate is glass or ceramic.

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