Light-emitting device

Abstract

The light-emitting device comprises a substrate, and a piezoresistive layer, a first electrode layer, a light-emitting layer and a second electrode layer which are arranged on the same side of the substrate, the light-emitting layer is arranged on the side, away from the substrate, of the first electrode layer, and the second electrode layer is arranged on the side, away from the substrate, of the light-emitting layer; the first electrode layer comprises a plurality of first electrodes, a plurality of electrode leads and a plurality of first bonding pins; each electrode lead is electrically connected with one first electrode and one first bonding pin; the substrate comprises an electrostatic protection area, the piezoresistive layer is arranged in the electrostatic protection area, and the piezoresistive layer is electrically connected with the first electrode layer; a plurality of light-emitting units are arranged on the substrate, and each light-emitting unit comprises a first electrode, and a light-emitting layer and a second electrode layer corresponding to the first electrode; and the clamping voltage of the piezoresistive layer is greater than the working voltage of the light-emitting unit. The reliability and the service life of the light-emitting device can be improved.

Description

Technical Field

[0001] The present invention relates to the field of organic light emitting technology, and in particular to a light emitting device. Background Art

[0002] Organic Light-Emitting Diode (OLED) light-emitting devices are prone to problems such as black spots and bright spots during production and use. One important reason is static electricity. Static charges are adsorbed on the surface of the product, reach the inside of the screen through electrode wires or human contact, and act on the device structure, causing black spots or bright spots, reducing device reliability and screen life. Summary of the invention

[0003] The present invention provides a light emitting device to improve the reliability and life of the light emitting device.

[0004] According to one aspect of the present invention, there is provided a light emitting device, comprising:

[0005] A substrate, and a varistor layer, a first electrode layer, a light-emitting layer, and a second electrode layer arranged on the same side of the substrate; the light-emitting layer is arranged on a side of the first electrode layer away from the substrate, and the second electrode layer is arranged on a side of the light-emitting layer away from the substrate;

[0006] The first electrode layer includes a plurality of first electrodes, a plurality of electrode leads and a plurality of first bonding pins; each of the electrode leads is electrically connected to one of the first electrodes and one of the first bonding pins;

[0007] The substrate comprises an electrostatic protection area, the varistor layer is arranged in the electrostatic protection area, and the varistor layer is electrically connected to the first electrode layer;

[0008] A plurality of light-emitting units are arranged on the substrate, each of the light-emitting units includes a first electrode, and the light-emitting layer and the second electrode layer corresponding to the first electrode; the clamping voltage of the varistor layer is greater than the operating voltage of the light-emitting unit.

[0009] Optionally, the varistor layer is arranged on the surface of the first electrode layer.

[0010] Optionally, the varistor layer is electrically connected to the second electrode layer;

[0011] The clamping voltage of the varistor layer is less than the breakdown voltage of the light emitting unit.

[0012] Optionally, the first electrode layer further includes a lap conductive block and a second bonding pin;

[0013] The lap conductive block is electrically connected to the second bonding pin, and the second electrode layer is in contact with the lap conductive block;

[0014] The varistor layer is electrically connected to the overlapping conductive block.

[0015] Optionally, the substrate comprises a light-emitting area, a lead area and a bonding area, the lead area is arranged on at least one side of the light-emitting area, and the bonding area is arranged on a side of the lead area away from the light-emitting area;

[0016] A plurality of the first electrodes are arranged in a light emitting area, a plurality of the first bonding pins are arranged in the bonding area, and the electrode lead extends from the edge of the first electrode through the lead area to the bonding area;

[0017] The electrostatic protection area includes at least one of the lead area, the bonding area, and the light emitting area.

[0018] Optionally, the electrostatic protection area includes the lead area and / or the bonding area, and the varistor layer is electrically connected to the second electrode layer;

[0019] When the electrostatic protection area includes the lead area, the varistor layer is arranged on a surface of the first electrode layer adjacent to the substrate, and / or the varistor layer is arranged on a surface of the first electrode layer away from the substrate;

[0020] When the electrostatic protection area includes the bonding area, the varistor layer is disposed on a surface of the first electrode layer adjacent to the substrate.

[0021] Optionally, when the electrostatic protection area includes the light-emitting area, the varistor layer is arranged on a surface of the first electrode layer adjacent to the substrate or on a surface of the first electrode layer away from the substrate, and a vertical projection of the varistor layer on the first electrode layer overlaps with each of the first electrodes.

[0022] Optionally, the light emitting device further comprises:

[0023] an insulating layer, the insulating layer being arranged on a side of the first electrode layer away from the substrate, the insulating layer covering the electrode leads and an area between adjacent first electrodes;

[0024] The insulating layer is reused as the varistor layer.

[0025] Optionally, the clamping voltage of the varistor layer is greater than or equal to 10V and less than or equal to 100V;

[0026] The response time of the varistor layer is less than 30 ns.

[0027] Optionally, the light transmittance of the varistor layer is greater than or equal to 70%;

[0028] Preferably, the light transmittance of the varistor layer is greater than or equal to 90%;

[0029] The thickness of the varistor layer is greater than or equal to 5 nm and less than or equal to 500 nm;

[0030] The material of the varistor layer includes at least one of zinc oxide, bismuth oxide, nickel oxide and chromium oxide.

[0031] The light-emitting device of the embodiment of the present invention sets a varistor layer in the electrostatic protection area, and the varistor layer is electrically connected to the first electrode layer. Since the clamping voltage of the varistor layer is greater than the working voltage of the light-emitting unit, when the light-emitting device is working normally, the resistance of the varistor layer is very high and is in an open circuit state. When the high-voltage static electricity is released, the static voltage is greater than the clamping voltage of the varistor layer, and the resistance of the varistor layer drops sharply and becomes a conductive material, which can lead out the static electricity on the first electrode layer, or electrically connect multiple first electrodes, increase the area of ​​the light-emitting device that withstands static electricity, increase the capacitance that withstands static electricity, avoid static electricity damage to the light-emitting device, improve the anti-static ability of the light-emitting device, and improve the reliability and life of the light-emitting device. In addition, the embodiment of the present invention only needs to add a layer of varistor layer, and there is no need to make a complex circuit or structure, and the manufacturing process is simple.

[0032] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0034] Figure 1 It is a top view of a light emitting device provided by an embodiment of the present invention.

[0035] Figure 2 yes Figure 1 A cross-sectional view of the light emitting device along section line AA.

[0036] Figure 3 4 is a top view of another light emitting device provided by an embodiment of the present invention.

[0037] Figure 44 is a top view of another light emitting device provided by an embodiment of the present invention.

[0038] Figure 5 yes Figure 3 A cross-sectional view of the light emitting device along the section line BB.

[0039] Figure 6 yes Figure 4 A cross-sectional view of the light emitting device along section line CC.

[0040] Figure 7 4 is a top view of another light emitting device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0041] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0042] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0043] During the use of OLED light-emitting devices, whether it is the discharge of static electricity from the human body or the equipment to the OLED, the hazards of static electricity are objectively present. Since the current OLED light-emitting devices are designed with multiple partitions in order to pursue the diversity of lighting effects and the interactivity of information, the general design is to pattern the electrodes on the substrate and then connect them to the electrode bonding area outside the package through electrode leads. In order to increase the aperture ratio of the light-emitting device, the electrode leads are usually designed to be narrower. Such static electricity is very easy to break down during the discharge process, causing the screen to short-circuit or open-circuit, resulting in failure.

[0044] Currently, a commonly used method is to add an electrostatic protection circuit in an external circuit to perform electrostatic protection. However, this method increases the difficulty of manufacturing the light-emitting device.

[0045] Based on the above problems, an embodiment of the present invention provides a light emitting device. Figure 1 is a top view of a light emitting device provided by an embodiment of the present invention, Figure 2 yes Figure 1 The cross-sectional view of the light emitting device along the section line AA, refer to Figure 1 and Figure 2 The light-emitting device comprises: a substrate 10 and a varistor layer 20, a first electrode layer 30, a light-emitting layer 40 and a second electrode layer 50 arranged on the same side of the substrate 10; the light-emitting layer 40 is arranged on the side of the first electrode layer 30 away from the substrate 10, and the second electrode layer 50 is arranged on the side of the light-emitting layer 40 away from the substrate 10; the first electrode layer 30 comprises a plurality of first electrodes 31, a plurality of electrode leads 32 and a plurality of first bonding pins 33; each electrode lead 32 is electrically connected to a first electrode 31 and a first bonding pin 33;

[0046] The substrate 10 includes an electrostatic protection area 110, the varistor layer 20 is disposed in the electrostatic protection area 110, and the varistor layer 20 is electrically connected to the first electrode layer 30. A plurality of light-emitting units 41 are disposed on the substrate 10, each of the light-emitting units 41 includes a first electrode 31, and a light-emitting layer 40 and a second electrode layer 50 corresponding to the first electrode 31; the clamping voltage of the varistor layer 20 is greater than the working voltage of the light-emitting unit 41.

[0047] The substrate 10 may be a flexible substrate or a hard substrate. Each first electrode 31 and its corresponding light-emitting layer 40 and its corresponding second electrode layer 50 are a light-emitting unit 41, and the light-emitting unit 41 may be an organic light-emitting unit, and the light-emitting layer 40 is an organic light-emitting layer. One of the first electrode 31 and the second electrode layer 50 is a cathode and the other is an anode. The first electrode 31 may be a light-transmitting electrode or a reflective electrode. When the first electrode 31 is a light-transmitting electrode, the first electrode 31 may be made of a light-transmitting conductive material such as ITO, and the electrode lead 32 and the first bonding pin 33 may be made of the same material as the first electrode 31, or different materials. Exemplarily, the electrode lead 32 and the first bonding pin 33 are made of metal material. The first bonding pin 33 is used to bond an external circuit, and the external circuit is used to output a driving signal to the first bonding pin 33, and the driving signal is transmitted to the first electrode 31 through the electrode lead 32 to drive the light-emitting unit 41 to emit light. Each electrode lead 32 is electrically connected to a first electrode 31 and a first bonding pin 33 to achieve separate control of each light-emitting unit 41. The electrostatic protection area 110 is an area in the light emitting device that needs electrostatic protection to avoid electrostatic damage. The electrostatic protection area 110 may include the area where the electrode lead 32 is located, the area where the first bonding pin 33 is located, and the area where the first electrode 31 is located.

[0048] Since the clamping voltage of the varistor layer 20 is greater than the working voltage of the light-emitting unit 41, when the light-emitting device is working normally, the voltage applied to the varistor layer 20 is less than the clamping voltage of the varistor layer 20, and the resistance of the varistor layer 20 is very high and is in an open circuit state. When the high-voltage static electricity is released, after the static voltage is greater than the clamping voltage of the varistor layer 20, the resistance of the varistor layer 20 drops sharply and becomes a conductive material. The varistor layer 20 can be connected to a fixed potential. When the varistor layer 20 becomes a conductive material, since the varistor layer 20 is electrically connected to the first electrode layer 30, the varistor layer 20 can quickly conduct the surge current applied to the first electrode layer 30. Exemplarily, the varistor layer 20 is grounded, and the varistor layer 20 can conduct the surge current applied to the first electrode layer 30 to the ground, thereby protecting the light-emitting unit 41 from being affected. In addition, the varistor layer 20 may also not be connected to a potential. Since the varistor layer 20 is electrically connected to the first electrode layer 30 and electrically connects the plurality of first electrodes 31, when high-voltage static electricity is released, the varistor layer 20 becomes a conductive material, thereby increasing the area of ​​the light-emitting device that is subject to static electricity and increasing the capacitance that is subject to static electricity, thereby improving the anti-static tolerance level of the light-emitting unit 41.

[0049] The light-emitting device of the embodiment of the present invention is provided with a varistor layer 20 in the electrostatic protection area 110, and the varistor layer 20 is electrically connected to the first electrode layer 30. Since the clamping voltage of the varistor layer 20 is greater than the working voltage of the light-emitting unit 41, when the light-emitting device is working normally, the resistance of the varistor layer 20 is very high and is in an open circuit state. When the high-voltage static electricity is released, the static voltage is greater than the clamping voltage of the varistor layer 20, and the resistance of the varistor layer 20 drops sharply and becomes a conductive material, which can lead out the static electricity on the first electrode layer 30, or electrically connect multiple first electrodes 31, increase the area of ​​the light-emitting device that withstands static electricity, increase the capacitance that withstands static electricity, avoid static electricity from damaging the light-emitting device, improve the anti-static ability of the light-emitting device, and improve the reliability and life of the light-emitting device. In addition, the embodiment of the present invention only needs to add a layer of varistor layer 20, and there is no need to make a complex circuit or structure, and the manufacturing process is simple.

[0050] On the basis of the above embodiment, optionally, the varistor layer 20 is arranged on the surface of the first electrode layer 30 .

[0051] Specifically, the varistor layer 20 may be disposed only on the surface of the first electrode layer 30 adjacent to the substrate 10 ( Figure 2), or it may be arranged only on the surface of the first electrode layer 30 away from the substrate 10, or the varistor layer 20 may be arranged on both the surface of the first electrode layer 30 adjacent to the substrate 10 and the surface of the first electrode layer 30 away from the substrate 10. The varistor layer 20 is directly arranged on the surface of the first electrode layer 30, so that the varistor layer 20 is directly electrically connected to the first electrode layer 30, and no other conductive structure is required, so that when static electricity acts on the light-emitting device, the varistor layer 20 is electrically connected to the first electrode layer 30 faster, and the static electricity of the first electrode layer 30 is discharged faster, or the multiple first electrodes 31 are electrically connected faster, so as to avoid static electricity from damaging the light-emitting device.

[0052] On the basis of the above embodiment, optionally, the varistor layer 20 is electrically connected to the second electrode layer 50 , and the clamping voltage of the varistor layer 20 is less than the breakdown voltage of the light emitting unit 41 .

[0053] Specifically, the second electrode layer 50 is usually connected to a fixed potential, and illustratively, the second electrode layer 50 is grounded. By electrically connecting the varistor layer 20 to the second electrode layer 50, when static electricity acts on the first electrode layer 20, the varistor layer 20 becomes a conductive material, and the static electricity can be quickly conducted to the second electrode layer 50, and enters the ground through the second electrode layer 50, thereby realizing rapid conduction of static electricity.

[0054] Because the electrostatic voltage is greater than the clamping voltage of the varistor layer 20, the resistance of the varistor layer 20 drops sharply and becomes a conductive material, thereby achieving rapid discharge of static electricity. By setting the clamping voltage of the varistor layer 20 to be lower than the breakdown voltage of the light-emitting unit 41, the electrostatic voltage can be further prevented from damaging the light-emitting unit.

[0055] Based on the above embodiment, optionally, refer to Figure 1 and Figure 2 , the first electrode layer 30 also includes a lap conductive block 34 and a second bonding pin 35;

[0056] The bridging conductive block 34 is electrically connected to the second bonding pin 35, and the second electrode layer 50 is in contact with the bridging conductive block 34;

[0057] The varistor layer 20 is electrically connected to the overlapping conductive block 34.

[0058] Specifically, the overlapping conductive block 34 is arranged in the non-luminous area. Exemplarily, the overlapping conductive block 34 is arranged on one side of the area where the multiple light-emitting units 41 are located, and the edge area of ​​the second electrode layer 50 is in contact with the overlapping conductive block 34. The overlapping conductive block 34 is electrically connected to the second bonding pin 35, and can receive an electrical signal transmitted by an external circuit electrically connected to the second bonding pin 35, and transmit the electrical signal to the second electrode layer 50. When the second electrode layer 50 receives the electrical signal and the first electrode 31 receives the light-emitting driving signal, the light-emitting unit 41 emits light. By setting the varistor layer 20 to be electrically connected to the overlapping conductive block 34, the difficulty of the connection process between the varistor layer 20 and the second electrode layer 50 can be reduced.

[0059] Figure 3 is a top view of another light emitting device provided by an embodiment of the present invention, Figure 4 is a top view of another light emitting device provided by an embodiment of the present invention. Based on the above embodiment, optionally, refer to Figure 1-Figure 4 The substrate 10 includes a light-emitting area 103, a lead area 101 and a bonding area 102, wherein the lead area 101 is disposed on at least one side of the plurality of light-emitting areas, and the bonding area 102 is disposed on a side of the lead area 101 away from the light-emitting area;

[0060] A plurality of first electrodes 31 are arranged in the light-emitting area 103 , a plurality of first bonding pins 33 are arranged in the bonding area 102 , and the electrode lead 32 extends from the edge of the first electrode 31 through the lead area 101 to the bonding area 102 ; the electrostatic protection area 110 includes at least one of the lead area 101 , the bonding area 102 and the light-emitting area 103 .

[0061] The second bonding pin 35 is also disposed in the bonding area 102, and the bonding area 102 is used to bond the external circuit. The lead area 101 can be disposed on one side of the light emitting area 103, and all the first electrode leads 32 extend to the bonding area 102 through the lead area 101. The electrostatic protection area 110 can include only the lead area 101 ( Figure 3 ), may include only the bonding area 102, may include only the light-emitting area 103, or may include the bonding area 102 and the lead area 101 ( Figure 4 ), and may also include a lead area 101 and a light emitting area 103 ( Figure 1 ), and may also include a lead area 101, a bonding area 102, and a light-emitting area 103. The varistor layer 20 may cover the entire electrostatic protection area 110. Exemplarily, when the electrostatic protection area 110 includes the lead area 101 and the light-emitting area 102, the varistor layer 20 covers the lead area 101 and the light-emitting area 102, and the varistor layer 20 is in contact with the first electrode layer 30 of the lead area 101 and the light-emitting area 102.

[0062] The lead area 101 , the bonding area 102 and the light-emitting area 103 are all susceptible to electrostatic damage. The electrostatic protection area 110 includes at least one of the lead area 101 , the bonding area 102 and the light-emitting area 103 , so as to provide better electrostatic protection for the light-emitting device.

[0063] Figure 5 yes Figure 3 A cross-sectional view of the light emitting device along the section line BB, Figure 6 yes Figure 4 A cross-sectional view of the light emitting device along the section line CC. Based on the above embodiment, optionally, refer to Figure 3-Figure 6 , the electrostatic protection area 110 includes a lead area 101 and / or a bonding area 102, and the varistor layer 20 is electrically connected to the second electrode layer 50;

[0064] When the electrostatic protection area 110 includes the lead area 101, the varistor layer 20 is disposed on a surface of the first electrode layer 30 adjacent to the substrate 10, and / or, the varistor layer 20 is disposed on a surface of the first electrode layer 30 away from the substrate 10;

[0065] When the electrostatic protection region 110 includes the bonding region 102 , the varistor layer 20 is disposed on a surface of the first electrode layer 30 adjacent to the substrate 10 .

[0066] Specifically, the varistor layer 20 is directly in contact with the overlapping conductive block 34 or directly in contact with the second bonding pin 35 to achieve electrical connection with the second electrode layer 50. The electrostatic protection area 110 includes the lead area 101 and / or the bonding area 102, and the varistor layer 20 is electrically connected to the second electrode layer 50, so that when static electricity acts on the lead area 101 and the bonding area 102, the varistor layer 20 can quickly conduct static electricity to the second electrode layer 50, and then conduct it through the second electrode layer 50. In addition, since the bonding area 102 needs to bond an external circuit, the surface of the first bonding pin 33 and the second bonding pin 35 does not need to be covered with a film layer. Therefore, when the electrostatic protection area 110 includes the bonding area 102, the varistor layer 20 is arranged on the surface of the first electrode layer 30 adjacent to the substrate 10 to prevent the varistor layer 20 from affecting the bonding of the external circuit.

[0067] Based on the above embodiment, optionally, refer to Figure 1 When the electrostatic protection area 110 includes the light-emitting area 103, the varistor layer 20 is arranged on the surface of the first electrode layer 30 adjacent to the substrate 10 or on the surface of the first electrode layer 30 away from the substrate 10, and the vertical projection of the varistor layer 20 on the first electrode layer 30 overlaps with each first electrode 31.

[0068] Specifically, the varistor layer 20 overlaps each first electrode 31 at the vertical projection of the first electrode layer 30, so that the varistor layer 20 is connected to each first electrode 31. When the electrostatic protection area 110 includes the light-emitting area 103, the varistor layer 20 may be electrically connected to the second electrode layer 50, or may not be electrically connected to the second electrode layer 50. When the varistor layer 20 is not electrically connected to the second electrode layer 50, when static electricity acts on the light-emitting device, after the varistor layer 20 is converted into a conductive material, the varistor layer 20 electrically connects all the first electrodes 31, and all the light-emitting units 41 are subjected to static electricity after being connected in parallel, and the capacitance subjected to static electricity is larger, thereby increasing the static electricity that the light-emitting unit 41 can withstand, and avoiding damage to the light-emitting unit 41. When the varistor layer 20 is electrically connected to the second electrode layer 50, when static electricity acts on the light-emitting device, after the varistor layer 20 is converted into a conductive material, the varistor layer 20 is electrically connected to the second electrode layer 50, thereby shielding all the light-emitting units 20 between the second electrode layer 50 and the varistor layer 20, thereby improving the reliability of the device.

[0069] Figure 7 is a top view of another light emitting device provided by an embodiment of the present invention, Figure 7 The light-emitting layer and the second electrode layer are not shown. Based on the above embodiment, optionally, refer to Figure 7 , the light emitting device further comprises:

[0070] An insulating layer 60 , which is disposed on a side of the first electrode layer 30 away from the substrate 10 , and covers the electrode leads 32 and the area between adjacent first electrodes 31 ;

[0071] The insulating layer 60 is reused as the varistor layer 20 .

[0072] Specifically, in the light-emitting area 103, the insulating layer 60 is used to insulate different first electrodes 31 from each other, and to insulate the electrode leads 32 and the first electrode 31 from the second electrode layer 50. In the lead area 101, the insulating layer 60 is used to insulate adjacent electrode leads 32, and to insulate the second electrode layer 50 extending to the lead area 101 from the electrode leads 32. Since the varistor layer 20 is an insulating material when the light-emitting device is working normally, by reusing the varistor layer 20 and the insulating layer 60, the requirements of the light-emitting device for insulating various structures can be met, and the insulating layer 60 is in contact with both the electrode leads 32 and the first electrode 32, and the varistor layer 20 and the insulating layer 60 are reused, which can meet the electrostatic protection requirements, and there is no need to increase the preparation process steps, thereby reducing the process cost.

[0073] Based on the above embodiment, optionally, the clamping voltage of the varistor layer 20 is greater than or equal to 10V and less than or equal to 100V;

[0074] The response time of the varistor layer 20 is less than 30 ns.

[0075] Specifically, the clamping voltage of the varistor layer 20 is greater than or equal to 10V and less than or equal to 100V, which can ensure that the varistor layer 20 does not affect the normal operation of the light-emitting device and avoids static electricity damage to the light-emitting device when large static electricity acts on the light-emitting device. The response time of the varistor layer 20 is less than 30ns, so that when large static electricity acts on the light-emitting device, the varistor layer 20 can be quickly converted into a conductive material, further avoiding static electricity damage to the light-emitting device.

[0076] Based on the above embodiment, optionally, the light transmittance of the varistor layer 20 is greater than or equal to 70%.

[0077] Specifically, when the light emitted by the light-emitting unit is emitted through the substrate 10, the transmittance of the varistor layer 20 is set to be greater than or equal to 70%, so as to avoid the varistor layer 20 affecting the light output intensity of the light-emitting device. Furthermore, the transmittance of the varistor layer 20 is set to be greater than or equal to 90%.

[0078] Based on the above embodiment, optionally, the thickness of the varistor layer 20 is greater than or equal to 5 nm and less than or equal to 500 nm;

[0079] The material of the varistor layer 20 includes at least one of zinc oxide, bismuth oxide, nickel oxide, and chromium oxide.

[0080] Specifically, the thickness of the varistor layer 20 is greater than or equal to 5 nm and less than or equal to 500 nm, which can ensure that the varistor layer 20 has a high light transmittance.

[0081] Materials such as zinc oxide, bismuth oxide, nickel oxide and chromium oxide can meet the performance requirements of the varistor layer 20 of this embodiment, and the preparation process is simple. For example, the varistor layer 20 can be prepared by PVD, CVD or solution method.

[0082] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0083] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A light emitting device, characterized in that: include: A substrate, and a varistor layer, a first electrode layer, a light-emitting layer, and a second electrode layer arranged on the same side of the substrate; the light-emitting layer is arranged on a side of the first electrode layer away from the substrate, and the second electrode layer is arranged on a side of the light-emitting layer away from the substrate; The first electrode layer includes a plurality of first electrodes, a plurality of electrode leads and a plurality of first bonding pins; each of the electrode leads is electrically connected to one of the first electrodes and one of the first bonding pins; The substrate comprises an electrostatic protection area, the varistor layer is arranged in the electrostatic protection area, and the varistor layer is electrically connected to the first electrode layer; A plurality of light-emitting units are arranged on the substrate, each of the light-emitting units includes a first electrode, and the light-emitting layer and the second electrode layer corresponding to the first electrode; the clamping voltage of the varistor layer is greater than the operating voltage of the light-emitting unit.

2. The light emitting device according to claim 1, characterized in that: The varistor layer is arranged on the surface of the first electrode layer.

3. The light emitting device according to claim 1, characterized in that: The varistor layer is electrically connected to the second electrode layer; The clamping voltage of the varistor layer is less than the breakdown voltage of the light emitting unit.

4. The light emitting device according to claim 3, characterized in that: The first electrode layer also includes a lapped conductive block and a second bonding pin; The lap conductive block is electrically connected to the second bonding pin, and the second electrode layer is in contact with the lap conductive block; The varistor layer is electrically connected to the overlapping conductive block.

5. The light emitting device according to any one of claims 1 to 4, characterized in that: The substrate comprises a light-emitting area, a lead area and a bonding area, wherein the lead area is arranged on at least one side of the light-emitting area, and the bonding area is arranged on a side of the lead area away from the light-emitting area; A plurality of the first electrodes are arranged in the light emitting area, a plurality of the first bonding pins are arranged in the bonding area, and the electrode leads extend from the edge of the first electrode through the lead area to the bonding area; The electrostatic protection area includes at least one of the lead area, the bonding area, and the light emitting area.

6. The light emitting device according to claim 5, characterized in that: The electrostatic protection area includes the lead area and / or the bonding area, and the varistor layer is electrically connected to the second electrode layer; When the electrostatic protection area includes the lead area, the varistor layer is arranged on a surface of the first electrode layer adjacent to the substrate, and / or the varistor layer is arranged on a surface of the first electrode layer away from the substrate; When the electrostatic protection area includes the bonding area, the varistor layer is disposed on a surface of the first electrode layer adjacent to the substrate.

7. The light emitting device according to claim 5, characterized in that: When the electrostatic protection area includes the light-emitting area, the varistor layer is arranged on a surface of the first electrode layer adjacent to the substrate or on a surface of the first electrode layer away from the substrate, and a vertical projection of the varistor layer on the first electrode layer overlaps with each of the first electrodes.

8. The light emitting device according to claim 1, characterized in that: Also includes: an insulating layer, the insulating layer being arranged on a side of the first electrode layer away from the substrate, the insulating layer covering the electrode leads and an area between adjacent first electrodes; The varistor layer is reused as the insulating layer.

9. The light emitting device according to claim 1, characterized in that: The clamping voltage of the varistor layer is greater than or equal to 10V and less than or equal to 100V; The response time of the varistor layer is less than 30ns.

10. The light emitting device according to claim 1, characterized in that: The light transmittance of the varistor layer is greater than or equal to 70%; Preferably, the light transmittance of the varistor layer is greater than or equal to 90%; The thickness of the varistor layer is greater than or equal to 5 nm and less than or equal to 500 nm; The material of the varistor layer includes at least one of zinc oxide, bismuth oxide, nickel oxide and chromium oxide.

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