IC bridge, IC module, and method for manufacturing IC module

Abstract

Provided is an IC bridge which can be easily thinned after being mounted without impairing operability during mounting. An IC bridge (10) is bridged between a first IC chip and a second IC chip and electrically connects the first IC chip and the second IC chip, the IC bridge (10) having: a bridge redistribution layer (12) disposed on the front surface side of the IC bridge; and a bridge resin layer (18) disposed on the back surface side of the IC bridge. The bridge redistribution layer (12) has: a dielectric layer (13); a wiring (14) that is disposed within the dielectric layer and electrically connects the first IC chip and the second IC chip; a first pad electrode (15) which is disposed so as to be exposed on the surface thereof and which electrically connects the wiring and the first IC chip; and a second pad electrode (16) that is disposed so as to be exposed on the surface and electrically connects the wiring and the second IC chip.

Description

Technical Field

[0001] The invention relates to an IC bridge, an IC module and a method for manufacturing the IC module. Background Art

[0002] In IC modules, a 3D or 2.5D mounting technology is known that utilizes TSV (Through Silicon Via) technology to mount multiple IC bare chips (IC chips) on a Si interposer. According to such mounting technology, high-density wiring can be formed for multiple IC bare chips (IC chips), and miniaturization, thin film, and broadband can be achieved. However, such Si interposers are relatively expensive.

[0003] In this regard, Patent Document 1 discloses the following 3D or 2.5D mounting technology: Instead of the Si interposer described above, a redistribution layer (RDL) and a small Si bridge die are used, and multiple IC dies (IC chips) are mounted on these. IC modules that use a redistribution layer to mount multiple IC dies (IC chips) are mostly manufactured using FOWLP (Fan Out Wafer Level Package) technology. According to such mounting technology, high-density wiring can be formed for multiple IC dies (IC chips) at a relatively low cost, and miniaturization, thin filmization, and broadbandization can be achieved.

[0004] More specifically, the IC module described in Patent Document 1 comprises: a processor die (114) and a memory die (116) (equivalent to a first IC chip and a second IC chip) embedded in a sealing material (118) (equivalent to a module surface side resin layer), a redistribution layer (120) (equivalent to a module redistribution layer), a Si bridge die (132) (equivalent to an IC bridge) embedded in a sealing material (146) (equivalent to a module back side resin layer), conductive pillars (124, 126, 134, 136), and conductive bumps (144). Such an IC module is mounted on a packaging substrate (140) and packaged.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent document 1: U.S. Patent Application Publication No. 2020 / 0185367. Summary of the invention

[0008] Problem that the invention aims to solve

[0009] For the sake of operability during installation (reducing the warping of the Si bridge die, preventing defects of the Si bridge die, etc.), the thickness of the Si bridge die (equivalent to the IC bridge) is approximately 100um or more. Therefore, the height of the conductive column arranged in parallel with the Si bridge die is also approximately 100um or more. However, if the height of the Si bridge die and the conductive column is increased, it will hinder the further thinning of the IC module. In addition, if the height of the conductive column is increased, the diameter of the conductive column needs to be thickened. If the diameter of the conductive column becomes thicker, the number of conductive columns will be limited, hindering high integration.

[0010] In this regard, it is considered that after the Si bridge die is installed, the Si bridge die is ground to make the thickness of the Si bridge die thinner. However, since the Si bridge die is relatively hard, the flatness of the ground surface will be damaged when the Si bridge die and the softer sealing material are ground at the same time, so when it is installed on the package substrate, problems such as poor connection of the conductive bumps may occur.

[0011] An object of the present invention is to provide an IC bridge, an IC module, and a method for manufacturing an IC module that can easily achieve thinning after mounting without impairing workability during mounting.

[0012] Solutions for solving problems

[0013] The IC bridge of the present invention is connected between a first IC chip and a second IC chip, electrically connecting the first IC chip and the second IC chip, and the IC bridge comprises: a bridge redistribution layer, which is arranged on the surface side of the IC bridge; and a bridge resin layer, which is arranged on the back side of the IC bridge. The bridge redistribution layer comprises: a dielectric layer; wiring, which is arranged in the dielectric layer, electrically connecting the first IC chip and the second IC chip; a first pad electrode, which is arranged to be exposed on the surface, electrically connecting the wiring and the first IC chip; and a second pad electrode, which is arranged to be exposed on the surface, electrically connecting the wiring and the second IC chip.

[0014] The IC module of the present invention comprises: a module surface side resin layer, a module redistribution layer, and a module back side resin layer stacked in sequence from the front side to the back side; a first IC chip and a second IC chip, which are arranged in the module surface side resin layer and arranged along the front side; a first wiring and a third wiring, which are arranged in the module redistribution layer and electrically connected to the first IC chip; a second wiring and a fourth wiring, which are arranged in the module redistribution layer and electrically connected to the second IC chip; a first conductive column, which is arranged in the module back side resin layer and extends from the front side to the back side, with one end electrically connected to the first wiring of the module redistribution layer and the other end exposed on the back side; a second conductive column, which is arranged in the module back side resin layer and extends from the front side to the back side, with one end electrically connected to the second wiring of the module redistribution layer and the other end exposed on the back side; and an IC bridge, which is embedded in the module back side resin layer, bridges between the first IC chip and the second IC chip, and electrically connects the first IC chip and the second IC chip via the third wiring and the fourth wiring of the module redistribution layer. A thickness of the IC bridge from the front side to the back side and a thickness of the module back side resin layer from the front side to the back side are 10 μm or more and 50 μm or less.

[0015] In the manufacturing method of the IC module of the present invention, the IC module comprises: a module surface side resin layer, a module redistribution layer and a module back side resin layer stacked in sequence from the surface to the back side; a first IC chip and a second IC chip, which are arranged in the module surface side resin layer and arranged along the surface; a first wiring and a third wiring, which are arranged in the module redistribution layer and electrically connected to the first IC chip; a second wiring and a fourth wiring, which are arranged in the module redistribution layer and electrically connected to the second IC chip; a first conductive column, which is arranged in the module back side resin layer and extends from the surface side to the back side, with one end electrically connected to the first wiring of the module redistribution layer and the other end exposed on the back side; a second conductive column, which is arranged in the module back side resin layer and extends from the surface side to the back side, with one end electrically connected to the second wiring of the module redistribution layer and the other end exposed on the back side; and an IC bridge embedded in the module back side resin layer, bridging between the first IC chip and the second IC chip, electrically connecting the first IC chip and the second IC chip via the third wiring and the fourth wiring of the module redistribution layer. The manufacturing method of the IC module comprises: forming the module surface side resin layer configured with the first IC chip and the second IC chip, forming the module redistribution layer, forming a material layer of the module back side resin layer, the material layer of the module back side resin layer being configured with the IC bridge having a thickness of approximately 100 μm or more from the surface side to the back side, and the first conductive column and the second conductive column, and by simultaneously grinding the material layer of the module back side resin layer on the back side and the bridge resin layer of the IC bridge, the IC bridge and the module back side resin layer having a thickness of 10 μm or more and 50 μm or less from the surface side to the back side are obtained.

[0016] Effects of the Invention

[0017] According to the present invention, the workability of the IC bridge can be easily reduced in thickness without impairing the IC bridge when the IC module is mounted. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a cross-sectional view showing the IC module according to the first embodiment.

[0019] Figure 2 To express Figure 1 FIG. 1 is a cross-sectional view of an IC bridge in the IC module shown, that is, an IC bridge according to the first embodiment.

[0020] Figure 3A It is a diagram showing an example of the method for manufacturing the IC bridge according to the first embodiment.

[0021] Figure 3B It is a diagram showing an example of the method for manufacturing the IC bridge according to the first embodiment.

[0022] Figure 3C It is a diagram showing an example of the method for manufacturing the IC bridge according to the first embodiment.

[0023] Figure 3D It is a diagram showing an example of the method for manufacturing the IC bridge according to the first embodiment.

[0024] Figure 3E It is a diagram showing an example of the method for manufacturing the IC bridge according to the first embodiment.

[0025] Figure 4A It is a diagram showing another example of the method for manufacturing the IC bridge according to the first embodiment.

[0026] Figure 4B It is a diagram showing another example of the method for manufacturing the IC bridge according to the first embodiment.

[0027] Figure 4C It is a diagram showing another example of the method for manufacturing the IC bridge according to the first embodiment.

[0028] Figure 5A It is a diagram showing an example of the method for manufacturing the IC module according to the first embodiment.

[0029] Figure 5B It is a diagram showing an example of the method for manufacturing the IC module according to the first embodiment.

[0030] Figure 5C It is a diagram showing an example of the method for manufacturing the IC module according to the first embodiment.

[0031] Figure 6 It is a cross-sectional view showing an IC module according to the second embodiment.

[0032] Figure 7 To express Figure 6 FIG. 1 is a cross-sectional view of an IC bridge in an IC module, that is, an IC bridge according to a second embodiment.

[0033] Fig. 8A It is a diagram showing an example of a method for manufacturing an IC bridge according to the second embodiment.

[0034] Figure 8B It is a diagram showing an example of a method for manufacturing an IC bridge according to the second embodiment.

[0035] Figure 8C It is a diagram showing an example of a method for manufacturing an IC bridge according to the second embodiment.

[0036] Fig.8D It is a diagram showing an example of a method for manufacturing an IC bridge according to the second embodiment.

[0037] Fig. 8E It is a diagram showing an example of a method for manufacturing an IC bridge according to the second embodiment.

[0038] Fig.9A It is a diagram showing an example of a method for manufacturing an IC module according to the second embodiment.

[0039] Fig. 9B It is a diagram showing an example of a method for manufacturing an IC module according to the second embodiment.

[0040] Fig. 9C It is a diagram showing an example of a method for manufacturing an IC module according to the second embodiment. DETAILED DESCRIPTION

[0041] Hereinafter, an example of an embodiment of the present invention will be described with reference to the accompanying drawings. It should be noted that the same reference numerals are given to the same or corresponding parts in each of the drawings.

[0042] [First embodiment]

[0043] (IC module: Integrated Circuit Module)

[0044] Figure 1 FIG. 2 is a cross-sectional view showing an IC module according to the first embodiment. Figure 1 As shown, the IC module 100 includes a module surface side resin layer 110, a module redistribution layer 130, and a module back side resin layer 120 which are sequentially stacked from the surface to the back side. In addition, the IC module 100 includes a first IC chip 21, a second IC chip 22, a first conductor bump 111, a second conductor bump 112, a third conductor bump 113, a fourth conductor bump 114, a first wiring 131, a second wiring 132, a third wiring 133, a fourth wiring 134, a first conductor column 121, a second conductor column 122, an IC bridge 10, a first conductor bump 141, and a second conductor bump 142.

[0045] The first IC chip 21 and the second IC chip 22 (Integrated Circuit chip, also called IC bare chip: Integrated Circuit die) are sealed by the module surface side resin layer 110. That is, the first IC chip 21 and the second IC chip 22 are arranged in the module surface side resin layer 110. The first IC chip 21 and the second IC chip 22 are arranged along the surface of the IC module. There is no particular limitation on the first IC chip 21 and the second IC chip 22, and examples thereof include logic chips such as SoC (System On Chip), MPU (Micro Processing Unit), FPGA (Field Programmable Gate Array), and memory chips such as DRAM and SRAM. There is no particular limitation on the combination of the first IC chip 21 and the second IC chip 22. Figure 1 An example of a combination of a SoC and a memory is described in .

[0046] The first IC chip 21 is connected to the module redistribution layer 130 via the first conductor bumps 111 and the third conductor bumps 113. The second IC chip 22 is connected to the module redistribution layer 130 via the second conductor bumps 112 and the fourth conductor bumps 114. The first conductor bumps 111, the second conductor bumps 112, the third conductor bumps 113, and the fourth conductor bumps 114 may be micro bumps, Cu pillar bumps, or the like.

[0047] The first conductive bumps 111 , the second conductive bumps 112 , and the first wirings 131 , the second wirings 132 , the first conductive posts 121 , and the second conductive posts 122 described later are mainly used to provide power and GND, and to transmit and receive external signals.

[0048] On the other hand, the third conductive bumps 113 , the fourth conductive bumps 114 , the third wirings 133 , the fourth wirings 134 described later, and the IC bridge 10 are used for transmission and reception of communication interface signals between the first IC chip 21 and the second IC chip 22 .

[0049] The first wiring 131, the second wiring 132, the third wiring 133, and the fourth wiring 134 are arranged in the module redistribution layer (RDL) 130, and these wirings are covered by the dielectric layer 136. The first wiring 131 is electrically connected to the first IC chip 21 via the first conductive bump 111, and the second wiring 132 is electrically connected to the second IC chip 22 via the second conductive bump 112. The third wiring 133 is electrically connected to the first IC chip 21 via the third conductive bump 113, and the fourth wiring 134 is electrically connected to the second IC chip 22 via the fourth conductive bump 114. As the material of the first wiring 131, the second wiring 132, the third wiring 133, and the fourth wiring 134, metals such as Cu can be cited. As the material of the dielectric layer 136, organic materials such as polyimide can be cited.

[0050] The first conductor column 121 and the second conductor column 122 (also referred to as conductive pillars) are arranged in the module back side resin layer 120, and extend from the surface side to the back side of the IC module. One end of the first conductor column 121 is electrically connected to the first wiring 131 of the module redistribution layer 130, and the other end of the first conductor column 121 is exposed on the back side of the IC module. One end of the second conductor column 122 is electrically connected to the second wiring 132 of the module redistribution layer 130, and the other end of the second conductor column 122 is exposed on the back side of the IC module. Examples of the materials of the first conductor column 121 and the second conductor column 122 include metals such as Cu.

[0051] The first conductive bump 141 and the second conductive bump 142 are arranged on the back side of the IC module. The first conductive bump 141 is connected to the first conductive column 121, and the second conductive bump 142 is connected to the second conductive column 122. As the first conductive bump 141 and the second conductive bump 142, C4 (Controlled Collapsed Chip Connection) bumps and the like can be cited.

[0052] The IC bridge 10 is embedded in the module back side resin layer 120, and bridges between the first IC chip 21 and the second IC chip 22. The IC bridge 10 is electrically connected to the third wiring 133 and the fourth wiring 134, and electrically connects the first IC chip 21 and the second IC chip 22 via the third wiring 133, the third conductive bump 113, the fourth wiring 134, and the fourth conductive bump 114. The details of the IC bridge 10 will be described later.

[0053] The thickness of the module back-side resin layer 120 from the front side to the back side is 10 μm or more and 50 μm or less. The thickness of the IC bridge 10 from the front side to the back side is 10 μm or more and 50 μm or less.

[0054] In the direction from the front side toward the back side, the position of the back side surface of the module back side resin layer 120 is flush with the position of the back side surface of the bridge resin layer 18 of the IC bridge 10 described later. That is, the back side surface of the module back side resin layer 120 and the back side surface of the bridge resin layer 18 of the IC bridge 10 described later are aligned as one surface without a step difference.

[0055] The material of the module back side resin layer 120 and the material of the bridge resin layer 18 of the IC bridge 10 may be the same or different. Usually, epoxy resin-based materials or the like are used for both.

[0056] (IC bridge: Integrated Circuit bridge)

[0057] Figure 2 To express Figure 1 FIG. 1 is a cross-sectional view of an IC bridge in an IC module, that is, an IC bridge of the first embodiment. Figure 2 As shown, the IC bridge 10 includes a bridge redistribution layer 12 disposed on the front side of the IC bridge, that is, the front side of the IC module, and a bridge resin layer 18 disposed on the back side of the IC bridge, that is, the back side of the IC module.

[0058] The bridge redistribution layer (RDL) 12 has a dielectric layer 13, wiring 14, a first pad electrode 15, and a second pad electrode 16. The wiring 14 is arranged in the dielectric layer 13, and electrically connects the first IC chip 21 and the second IC chip 22. The first pad electrode 15 is arranged to be exposed on the surface, and electrically connects the wiring 14 and the first IC chip 21. The second pad electrode 16 is arranged to be exposed on the surface, and electrically connects the wiring 14 and the second IC chip 22.

[0059] Metal such as Cu is used as the material of the wiring 14, and metal such as Cu and Al is used as the material of the first pad electrode 15 and the second pad electrode 16. Organic material such as polyimide is used as the material of the dielectric layer 13.

[0060] like Figure 2 As shown, the thickness of the IC bridge 10 from the front to the back of the IC module before mounting is 100 μm or more or substantially 100 μm or more. This reduces warping and prevents chipping, making it easy to handle the IC bridge 10 when mounting the IC module.

[0061] On the other hand, Figure 1As shown, the thickness from the front surface to the back surface of the IC bridge 10 of the mounted IC module is 10 μm or more and 50 μm or less. Thus, the mounted IC bridge 10 and the IC module 100 can be made thinner.

[0062] Hereinafter, an example of a method of manufacturing the IC bridge 10 and the IC module 100 will be described.

[0063] (An example of a method for manufacturing an IC bridge)

[0064] Figure 3A to Figure 3E FIG. 1 is a diagram showing an example of a method for manufacturing an IC bridge according to the first embodiment. Figure 3A to Figure 3E , an example of simultaneously manufacturing two IC bridges is shown.

[0065] First, if Figure 3A As shown, wiring 14 is formed on a flat first carrier substrate B1 such as glass, and a first pad electrode 15 and a second pad electrode 16 are formed on the wiring 14. Then, a dielectric layer 13 is stacked on the first carrier substrate B1 in such a manner as to cover the wiring 14, the first pad electrode 15, and the second pad electrode 16. Then, the dielectric layer 13 is polished to expose the first pad electrode 15 and the second pad electrode 16. Thus, a bridge redistribution layer 12 is formed in which the wiring 14, the first pad electrode 15, and the second pad electrode 16 are covered by the dielectric layer 13. Alternatively, the bridge redistribution layer 12 may be formed by stacking the wiring 14, the dielectric layer 13, the first pad electrode 15, the second pad electrode 16, and the dielectric layer 13 in sequence.

[0066] Then, if Figure 3B As shown, the first carrier substrate B1 is turned upside down, the side of the bridge redistribution layer 12 opposite to the first carrier substrate B1 is attached to a second carrier substrate B2 of a flat plate such as glass, and the first carrier substrate B1 is peeled off from the bridge redistribution layer 12 .

[0067] Then, if Figure 3C As shown, a bridge resin layer 18 is laminated on the back of the bridge redistribution layer 12 by a coating method or the like, the bridge resin layer 18 is cured, and the back of the bridge resin layer 18 is polished so that the thickness of the bridge resin layer 18 becomes a predetermined thickness. As described above, the predetermined thickness is preferably not too thin, and is about 100 μm or more, in consideration of the ease of handling of the produced IC bridge 10.

[0068] Then, if Figure 3D As shown, the second carrier substrate B2 is turned upside down and the second carrier substrate B2 is peeled off. Figure 3E As shown, the IC bridge 10 in which the bridge redistribution layer 12 and the bridge resin layer 18 are stacked can be obtained.

[0069] (Another example of a method for manufacturing an IC bridge die)

[0070] Figure 4A to Figure 4C FIG. 2 is a diagram showing another example of the method for manufacturing the IC bridge of the first embodiment. Figure 4A to Figure 4C An example of manufacturing two IC bridges simultaneously is also shown in FIG.

[0071] First, if Figure 4A As shown, a bridge resin layer 18 is formed on the first carrier substrate B1 by a coating method or the like, and the bridge resin layer 18 is cured. At this time, the bridge resin layer 18 is ground and polished to form a flat surface. Then, the wiring 14 is formed on the bridge resin layer 18, and the first pad electrode 15 and the second pad electrode 16 are formed on the wiring 14. Then, the dielectric layer 13 is stacked on the first carrier substrate B1 in a manner covering the wiring 14, the first pad electrode 15 and the second pad electrode 16. Then, the dielectric layer 13 is polished to expose the first pad electrode 15 and the second pad electrode 16. Thus, the bridge redistribution layer 12 is formed in which the wiring 14, the first pad electrode 15 and the second pad electrode 16 are covered by the dielectric layer 13. In addition, the bridge redistribution layer 12 can also be formed by stacking the wiring 14, the dielectric layer 13, the first pad electrode 15 and the second pad electrode 16, and the dielectric layer 13 in this order.

[0072] Then, if Figure 4B As shown, the first carrier substrate B1 is peeled off, as shown in Figure 4C As shown, the IC bridge 10 in which the bridge redistribution layer 12 and the bridge resin layer 18 are stacked can be obtained.

[0073] (An Example of a Method for Manufacturing an IC Module)

[0074] Figure 5A to Figure 5C FIG. 1 is a diagram showing an example of a method for manufacturing an IC module according to the first embodiment. Figure 5A to Figure 5C , an example of manufacturing two IC modules simultaneously is shown.

[0075] First, if Figure 5A As shown, using the well-known FOWLP (Fan Out Wafer Level Package, fan-out wafer level installation) technology,

[0076] · forming a module surface side resin layer 110 on which the first IC chip 21 and the second IC chip 22 are arranged and which seals the first IC chip 21 and the second IC chip 22,

[0077] · forming a module redistribution layer 130 in which a first wiring 131 , a second wiring 132 , a third wiring 133 , and a fourth wiring 134 electrically connected to the first IC chip 21 and the second IC chip 22 are arranged in a dielectric layer 136 ;

[0078] A material layer 120Z for forming a module back side resin layer, which is provided with a first conductive column 121 connected to the first wiring 131, a second conductive column 122 connected to the second wiring 132, and the above-mentioned IC bridge 10 that bridges between the first IC chip 21 and the second IC chip 22 and electrically connects the first IC chip 21 and the second IC chip 22 via the third wiring 133 and the fourth wiring 134, and these are sealed,

[0079] The module front surface side resin layer 110 , the module redistribution layer 130 , and the material layer 120Z of the module back surface side resin layer are stacked.

[0080] At this time, if Figure 2 As shown, the thickness from the front side to the back side of the IC bridge 10 is about 100 μm or more. This makes it possible to easily handle the IC bridge 10 during mounting.

[0081] The method of forming and laminating the material layer 120Z of the module front surface resin layer 110 , the module redistribution layer 130 , and the module back surface resin layer is not limited thereto, and various methods may be applied.

[0082] Then, if Figure 3B As shown, the material layer 120Z of the module back side resin layer and the bridge resin layer 18 of the IC bridge 10 are polished simultaneously. As a result, the other end of the first conductive column 121 and the other end of the second conductive column 122 are exposed.

[0083] At this time, if Figure 1 As shown, the thickness of the IC bridge 10 from the front side to the back side is reduced to 10 μm or more and 50 μm or less. Thus, the IC bridge 10 and the IC module 100 after mounting can be made thinner.

[0084] Then, if Figure 5C As shown, by forming the first conductive bump 141 and the second conductive bump 142 on the back and monolithicizing them, it is possible to obtain Figure 1 An IC bridge 10 and an IC module 100 are shown.

[0085] As described above, the IC bridge 10 of this embodiment includes the bridge redistribution layer 12 disposed on the front side and the bridge resin layer 18 disposed on the back side. Therefore, by making the thickness of the IC bridge 10 itself thicker, 100 μm or more or approximately 100 μm, easy handling can be achieved during installation.

[0086] On the other hand, after mounting, the bridge resin layer 18 on the back side of the IC bridge 10 can be easily polished while polishing the module back side resin layer 120 of the IC module 100, and the thickness of the IC bridge 10 can be reduced to 10 μm to 50 μm.

[0087] Thus, it is possible to easily achieve a reduction in thickness after installation without impairing the workability during installation.

[0088] Furthermore, since the IC bridge 10 is thinned after mounting, the height of the conductive pillar can be reduced and the diameter of the conductive pillar can be made thinner, so that the pitch of the conductive pillars can be narrowed, the number of the conductive pillars can be increased, and high integration can be achieved.

[0089] Furthermore, since the height of the conductive pillars can be reduced, the manufacturing yield is improved.

[0090] Here, when a Si bridge die is used as described in Patent Document 1, the hardness of the Si bridge die is much harder than the hardness of the module back side resin layer 120 of the IC module 100, so it is foreseeable that when the module back side resin layer 120 and the Si bridge die are polished simultaneously, a step difference will be generated on the back side between the module back side resin layer 120 and the Si bridge die.

[0091] In this regard, according to the IC bridge 10 of the present embodiment, since the module back side resin layer 120 of the IC module 100 and the bridge resin layer 18 of the IC bridge 10 both use epoxy resin-based materials, their hardness is roughly the same. Therefore, even if the module back side resin layer 120 and the bridge resin layer 18 are ground at the same time, the step difference between the module back side resin layer 120 and the Si bridge bare chip on the back side is suppressed, and the accuracy of the flatness of the back side is improved.

[0092] [Second Embodiment]

[0093] (IC module: Integrated Circuit Module)

[0094] Figure 6 It is a cross-sectional view showing an IC module according to the second embodiment. Figure 6 The IC module 100 of the second embodiment shown in FIG. Figure 1 The IC module 100 of the first embodiment shown in the figure is different in the structure of the IC bridge 10. The other structures of the IC module 100 of the second embodiment are the same as those of the IC module 100 of the first embodiment.

[0095] That is, the thickness of the module back side resin layer 120 from the front side to the back side is 10 μm or more and 50 μm or less. Also, the thickness of the IC bridge 10 from the front side to the back side is 10 μm or more and 50 μm or less.

[0096] Although the details will be described later, the conductive posts 19 are arranged on the module back side resin layer 120 of the IC bridge 10, and the conductive posts 19 are exposed on the back side. On the back side, third conductive bumps 143 are arranged at the positions of the conductive posts 19.

[0097] Furthermore, in the position in the direction from the front side toward the back side, the position of the back side surface of the module back side resin layer 120 is flush with the position of the back side surface of the bridge resin layer 18 of the IC bridge 10 described later. That is, the back side surface of the module back side resin layer 120 and the back side surface of the bridge resin layer 18 of the IC bridge 10 described later are aligned as one plane without a step difference.

[0098] (IC bridge: Integrated Circuit bridge)

[0099] Figure 7 To express Figure 6 FIG. 1 is a cross-sectional view of an IC bridge in an IC module, that is, an IC bridge according to a second embodiment. Figure 7 The IC bridge 10 of the second embodiment shown in FIG. Figure 2 The IC bridge 10 of the first embodiment shown in the figure is different in structure in that it further includes a conductive column 19. The rest of the structure of the IC bridge 10 of the second embodiment is the same as that of the IC bridge 10 of the first embodiment.

[0100] The conductor column 19 (also referred to as a conductor support) is arranged in the bridge resin layer 18, and extends from the surface side to the back side. One end of the conductor column 19 is electrically connected to the wiring 14 of the bridge redistribution layer 12, and the other end of the conductor column 19 is not exposed on the back side. As described later, the length of the conductor column 19 from the surface side to the back side is the length exposed on the back side of the bridge resin layer 18 of the IC bridge 10 after the material layer 120Z of the module back side resin layer and the bridge resin layer 18 of the IC bridge 10 are simultaneously polished. As a material for the conductor column 19, metals such as Cu can be cited.

[0101] like Figure 7 As shown, the thickness of the IC bridge 10 alone from the front surface to the back surface of the IC module before mounting is about 100 μm or more. This makes it possible to easily handle the IC bridge 10 when mounting the IC module.

[0102] On the other hand, Figure 6As shown, the thickness from the front surface to the back surface of the IC bridge 10 of the mounted IC module is 10 μm or more and 50 μm or less. Thus, the mounted IC bridge 10 and the IC module 100 can be made thinner.

[0103] Hereinafter, an example of a method of manufacturing the IC bridge 10 and the IC module 100 will be described.

[0104] (An example of a method for manufacturing an IC bridge)

[0105] Figure 8A to Figure 8E FIG. 1 is a diagram showing an example of a method for manufacturing an IC bridge according to the second embodiment. Figure 8A to Figure 8E , an example of simultaneously manufacturing two IC bridges is shown.

[0106] First, if Fig. 8A As shown, wiring 14 is formed on a flat first carrier substrate B1 such as glass, and a first pad electrode 15 and a second pad electrode 16 are formed on the wiring 14. Then, a dielectric layer 13 is stacked on the first carrier substrate B1 in such a manner as to cover the wiring 14, the first pad electrode 15, and the second pad electrode 16. Then, the dielectric layer 13 is polished to expose the first pad electrode 15 and the second pad electrode 16. Thus, a bridge redistribution layer 12 is formed in which the wiring 14, the first pad electrode 15, and the second pad electrode 16 are covered by the dielectric layer 13. Alternatively, the bridge redistribution layer 12 may be formed by stacking the wiring 14, the dielectric layer 13, the first pad electrode 15, the second pad electrode 16, and the dielectric layer 13 in sequence.

[0107] Then, if Figure 8B As shown, the first carrier substrate B1 is turned upside down, the side of the bridge redistribution layer 12 opposite to the first carrier substrate B1 is attached to a second carrier substrate B2 of a flat plate such as glass, and the first carrier substrate B1 is peeled off from the bridge redistribution layer 12. Then, a conductive column 19 is formed on the back side of the bridge redistribution layer 12. As described later, the length of the conductive column 19 is preferably the length exposed on the back side of the bridge resin layer 18 of the IC bridge 10 after the material layer 120Z of the module back side resin layer and the bridge resin layer 18 of the IC bridge 10 are simultaneously ground.

[0108] Then, if Figure 8C As shown, a bridge resin layer 18 is laminated on the back of the bridge redistribution layer 12 by a coating method or the like, the bridge resin layer 18 is cured, and the back of the bridge resin layer 18 is polished so that the thickness of the bridge resin layer 18 becomes a predetermined thickness. As described later, the predetermined thickness is preferably not too thin, and is about 100 μm or more, in consideration of the ease of handling of the produced IC bridge 10.

[0109] Then, if Fig.8DAs shown, the second carrier substrate B2 is turned upside down and the second carrier substrate B2 is peeled off. Fig. 8E As shown in FIG. 1 , the IC bridge 10 is obtained in which the bridge redistribution layer 12 and the bridge resin layer 18 are stacked and the conductive column 19 is arranged on the bridge resin layer 18 .

[0110] (An Example of a Method for Manufacturing an IC Module)

[0111] Figures 9A to 9C FIG. 1 is a diagram showing an example of a method for manufacturing an IC module according to the second embodiment. Figures 9A to 9C , an example of manufacturing two IC modules simultaneously is shown.

[0112] First, if Fig.9A As shown, using the well-known FOWLP (Fan Out Wafer Level Package, fan-out wafer level installation) technology,

[0113] · forming a module surface side resin layer 110 on which the first IC chip 21 and the second IC chip 22 are arranged and which seals the first IC chip 21 and the second IC chip 22,

[0114] · forming a module redistribution layer 130 in which a first wiring 131 , a second wiring 132 , a third wiring 133 , and a fourth wiring 134 electrically connected to the first IC chip 21 and the second IC chip 22 are arranged in a dielectric layer 136 ;

[0115] A material layer 120Z for forming a module back side resin layer, which is provided with a first conductive column 121 connected to the first wiring 131, a second conductive column 122 connected to the second wiring 132, and the above-mentioned IC bridge 10 that bridges between the first IC chip 21 and the second IC chip 22 and electrically connects the first IC chip 21 and the second IC chip 22 via the third wiring 133 and the fourth wiring 134, and these are sealed,

[0116] The module front surface side resin layer 110 , the module redistribution layer 130 , and the material layer 120Z of the module back surface side resin layer are stacked.

[0117] At this time, if Figure 7 As shown, the thickness from the front side to the back side of the IC bridge 10 is about 100 μm or more. This makes it possible to easily handle the IC bridge 10 during mounting.

[0118] The method of forming and laminating the material layer 120Z of the module front surface resin layer 110 , the module redistribution layer 130 , and the module back surface resin layer is not limited thereto, and various methods may be applied.

[0119] Then, if Fig. 9B As shown, the module back side resin layer material layer 120Z and the bridge resin layer 18 of the IC bridge 10 are polished simultaneously. As a result, the other end of the first conductive column 121, the other end of the second conductive column 122, and the other end of the conductive column 19 in the bridge resin layer 18 of the IC bridge 10 are exposed.

[0120] At this time, if Figure 1 As shown, the thickness of the IC bridge 10 from the front side to the back side is reduced to 10 μm or more and 50 μm or less. Thus, the IC bridge 10 and the IC module 100 after mounting can be made thinner.

[0121] Then, if Fig. 9C As shown, by forming the first conductive bump 141, the second conductive bump 142 and the third conductive bump 143 on the back side and monolithicizing them, a Figure 6 An IC bridge 10 and an IC module 100 are shown.

[0122] As described above, the IC bridge 10 , the IC module 100 , and the method for manufacturing an IC module according to the second embodiment can also obtain the same advantages as those of the IC bridge 10 , the IC module 100 , and the method for manufacturing an IC module according to the first embodiment.

[0123] Furthermore, according to the IC bridge 10 of the second embodiment, since the bridge resin layer 18 on the back side has the conductive column 19, the IC bridge 10 can directly receive power or signals via the conductive column 19 and supply them to the first IC chip 21 and / or the second IC chip 22. For example, the IC bridge 10 directly receives power from the drive circuit of the communication interface circuit between the first IC chip 21 and the second IC chip 22 via the conductive column 19 and supplies it to the first IC chip 21 and / or the second IC chip 22.

[0124] The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various changes and modifications are possible. For example, in the above embodiments, an IC bridge 10 bridging between two IC chips 21 and 22 and an IC module 100 having the IC bridge are exemplified. However, the features of the present invention are not limited to this, and the present invention can also be applied to an IC bridge bridging between three or more IC chips and an IC module having the IC bridge.

[0125] Description of Reference Numerals

[0126] 10: IC bridge;

[0127] 12: Rewiring layer for bridge;

[0128] 13: dielectric layer;

[0129] 14: Wiring;

[0130] 15: first pad electrode;

[0131] 16: second pad electrode;

[0132] 18: Resin layer for bridge;

[0133] 19: Conductor column;

[0134] 21: First IC chip;

[0135] 22: second IC chip;

[0136] 100: IC module;

[0137] 110: Module surface side resin layer;

[0138] 111: first conductive bump;

[0139] 112: second conductive bump;

[0140] 113: third conductive bump;

[0141] 114: fourth conductive bump;

[0142] 120: a back side resin layer for the module;

[0143] 120Z: Material layer of the back side resin layer for the module;

[0144] 121: a first conductive column;

[0145] 122: second conductive column;

[0146] 130: Rewiring layer for modules;

[0147] 131: first wiring;

[0148] 132: second wiring;

[0149] 133: third wiring;

[0150] 134: fourth wiring;

[0151] 136: dielectric layer;

[0152] 141: first conductive bump;

[0153] 142: second conductive bump;

[0154] 143: The third conductive bump.

Claims

1. An IC bridge, which is connected between a first IC chip and a second IC chip, electrically connecting the first IC chip and the second IC chip, and the IC bridge has: a bridge redistribution layer disposed on the surface side of the IC bridge; as well as a bridge resin layer disposed on the back side of the IC bridge, The bridge redistribution layer comprises: a dielectric layer; a wiring, which is arranged in the dielectric layer and electrically connects the first IC chip and the second IC chip; a first pad electrode configured to be exposed on the surface and electrically connect the wiring and the first IC chip; as well as The second pad electrode is arranged to be exposed on the surface and electrically connects the wiring and the second IC chip.

2. The IC bridge according to claim 1, further comprising: a conductive column disposed in the bridge resin layer and extending from the front side toward the back side, One end of the conductive column is electrically connected to the wiring of the bridge redistribution layer, The other end of the conductive column is not exposed on the back surface.

3. The IC bridge according to claim 1, further comprising: a conductive column disposed in the bridge resin layer and extending from the front side toward the back side, One end of the conductive column is electrically connected to the wiring of the bridge redistribution layer, The other end of the conductive column is exposed at the back surface.

4. The IC bridge according to claim 1 or 2, wherein: The thickness from the front surface to the back surface is 100 μm or more.

5. The IC bridge according to claim 1 or 3, wherein: The thickness from the front surface to the back surface is 10 μm or more and 50 μm or less.

6. An IC module comprising: A module surface side resin layer, a module redistribution layer, and a module back side resin layer stacked in order from the surface toward the back side; A first IC chip and a second IC chip are arranged in the module surface side resin layer and arranged along the surface; A first wiring and a third wiring, which are arranged in the module redistribution layer and are electrically connected to the first IC chip; A second wiring and a fourth wiring, which are arranged in the module redistribution layer and are electrically connected to the second IC chip; A first conductive column, which is arranged in the module back side resin layer, extends from the front side toward the back side, has one end electrically connected to the first wiring of the module redistribution layer, and the other end exposed on the back side; A second conductive column is disposed in the module back side resin layer, extends from the front side toward the back side, has one end electrically connected to the second wiring of the module redistribution layer, and the other end is exposed on the back side; as well as The IC bridge according to claim 1 or 3, which is embedded in the module back side resin layer, bridges between the first IC chip and the second IC chip, and electrically connects the first IC chip and the second IC chip via the third wiring and the fourth wiring of the module redistribution layer, A thickness of the IC bridge from the front side to the back side and a thickness of the module back side resin layer from the front side to the back side are 10 μm or more and 50 μm or less.

7. The IC module according to claim 6, wherein: In a position in a direction from the front side toward the back side, a position of a surface of the module back side resin layer on the back side is flush with a position of a surface of the bridge resin layer of the IC bridge on the back side.

8. A method for manufacturing an IC module, the IC module comprising: A module surface side resin layer, a module redistribution layer, and a module back side resin layer stacked in order from the surface toward the back side; A first IC chip and a second IC chip are arranged in the module surface side resin layer and arranged along the surface; A first wiring and a third wiring, which are arranged in the module redistribution layer and are electrically connected to the first IC chip; A second wiring and a fourth wiring, which are arranged in the module redistribution layer and are electrically connected to the second IC chip; A first conductive column, which is arranged in the module back side resin layer, extends from the front side toward the back side, has one end electrically connected to the first wiring of the module redistribution layer, and the other end exposed on the back side; A second conductive column is disposed in the module back side resin layer, extends from the front side toward the back side, has one end electrically connected to the second wiring of the module redistribution layer, and the other end is exposed on the back side; as well as an IC bridge embedded in the module back side resin layer, bridging between the first IC chip and the second IC chip, and electrically connecting the first IC chip and the second IC chip via the third wiring and the fourth wiring of the module redistribution layer, The manufacturing method of the IC module comprises: forming a surface-side resin layer for the module on which the first IC chip and the second IC chip are arranged, forming a redistribution layer for the module, a material layer for forming the module back side resin layer, the material layer for the module back side resin layer being configured with the IC bridge according to claim 1 or 2 having a thickness of 100 μm or more from the front side to the back side, and the first conductive column and the second conductive column, By simultaneously grinding the material layer of the module back side resin layer on the back side and the bridge resin layer of the IC bridge according to claim 1 or 2, the IC bridge and the module back side resin layer having a thickness of 10 μm or more and 50 μm or less from the surface side to the back side are obtained.

Images