A liquid crystal display

Abstract

The application provides a liquid crystal display, which comprises a back plate, a light emitting diode chip, a diffusion plate arranged on the light emitting diode chip, an optical film arranged on the diffusion plate, and a liquid crystal display panel. The liquid crystal display panel comprises an array substrate, a color film substrate arranged in a cell with the array substrate, a frame for bonding the color film substrate and the array substrate to form a cell space, and a liquid crystal layer arranged in the cell space. The width of the frame gradually increases from one side of the color film substrate to one side of the array substrate in the cross-section direction of the liquid crystal panel. The application can improve the display quality of the liquid crystal display.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of liquid crystal display, and particularly relates to a liquid crystal display. BACKGROUND

[0002] With the development of display technology, flat panel display devices such as liquid crystal displays (LCD) are widely applied to mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers and other consumer electronic products due to advantages such as high image quality, power saving, thin body and wide application range, and become the mainstream in display devices.

[0003] The frameless display is favored by customers due to its superior appearance, but the frameless display is prone to light leakage and may cause problems in the side edge encapsulation of liquid crystal molecules. In a high humidity environment, water vapor is also easy to enter the side edge of the frameless display, affecting the quality of the liquid crystal display. SUMMARY

[0004] In view of the defects of the prior art, the present application provides a liquid crystal display which can improve the quality of the liquid crystal display.

[0005] To achieve the above-mentioned purpose and its purpose, the present application provides a liquid crystal display, comprising:

[0006] a back plate;

[0007] a light emitting diode chip disposed on the bottom wall of the back plate, the light emitting diode chip comprising a substrate, a light emitting epitaxial layer disposed on the substrate, and a light conversion layer disposed on the light emitting side of the light emitting diode chip;

[0008] a diffusion plate disposed on the light emitting diode chip;

[0009] an optical film disposed on the diffusion plate; and

[0010] a liquid crystal display panel disposed on the optical film, the liquid crystal display panel comprising:

[0011] an array substrate;

[0012] a color film substrate disposed in a box with the array substrate;

[0013] a glue frame for pasting the color film substrate and the array substrate to form a box space, and in the cross-sectional direction of the liquid crystal display panel, the width of the glue frame gradually increases from the side close to the color film substrate to the side close to the array substrate; and

[0014] a liquid crystal layer disposed in the box space;

[0015] In the cross-sectional direction of the liquid crystal display panel, the side wall of the glue frame is arranged perpendicularly to the plane of the array substrate on the side close to the liquid crystal layer.

[0016] In the cross-sectional direction of the liquid crystal display panel, the side wall of the glue frame forms an angle with the array substrate on the side away from the liquid crystal layer, and the angle ranges from 75° to 89°.

[0017] In the display surface direction of the liquid crystal display panel, the width of the glue frame gradually increases from the side close to the top of the liquid crystal display panel to the side close to the bottom of the liquid crystal display panel.

[0018] In an embodiment of the present application, a buffer layer is further arranged on the substrate, and the buffer layer is an aluminum nitride layer or an aluminum gallium nitride layer.

[0019] In an embodiment of the present application, in the display surface direction of the liquid crystal display panel, the width of the glue frame at the top of the liquid crystal display panel is smaller than the width of the glue frame at the bottom of the liquid crystal display panel.

[0020] In an embodiment of the present application, a water-resistant film is arranged on the side of the glue frame away from the liquid crystal layer, and in the cross-sectional direction of the liquid crystal display panel, the thickness of the water-resistant film remains unchanged, and in the display surface direction of the liquid crystal display panel, the inner side of the water-resistant film is attached to the glue frame, and the outer side forms a rectangle and coincides with the outline of the liquid crystal display panel.

[0021] In an embodiment of the present application, an anti-reflection plate is arranged between the color film substrate and the liquid crystal layer.

[0022] In an embodiment of the present application, the refractive index of the anti-reflection plate ranges from 1.55 to 1.7.

[0023] In an embodiment of the present application, a light-shielding layer is arranged between the anti-reflection plate and the glue frame, and the light-shielding layer covers the glue frame and the water-resistant film.

[0024] In an embodiment of the present application, the substrate is a transparent substrate.

[0025] In an embodiment of the present application, the light-emitting epitaxial layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer arranged in a stack.

[0026] In an embodiment of the present application, the light-emitting epitaxial layer adopts a GaN / AlGaN superlattice structure with modulated doping.

[0027] In summary, the present application proposes a liquid crystal display which improves the quality of the liquid crystal display from multiple aspects. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 : A schematic diagram of the light-emitting diode chip in this application.

[0029] Figure 2 This application Figure 1 A schematic diagram of the light-emitting epitaxial layer.

[0030] Figure 3 : A structural schematic diagram of the liquid crystal display panel in the cross-sectional direction in this application.

[0031] Figure 4 : A schematic diagram of the structure of the liquid crystal display panel in the display direction of this application.

[0032] Figure 5 : A schematic diagram of the structure of the liquid crystal display in this application. Detailed Implementation

[0033] The following specific examples illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application.

[0034] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this application. Therefore, the drawings only show the components related to this application and are not drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0035] like Figure 1 As shown, this embodiment proposes a light-emitting diode (LED) chip 100, which includes a substrate 101, a light-emitting epitaxial layer 102 disposed on the substrate 101, and a light conversion layer 108 disposed on the light-emitting side of the LED chip 100. The light conversion layer 108 converts the light emitted by the light-emitting epitaxial layer 102 into light of a specific color. Therefore, the LED chip 100 can be used in a liquid crystal display 300 or in an LED display.

[0036] like Figure 1 As shown in the figure of one embodiment of this application, in the light-emitting diode chip 100, the material of the substrate 101 includes, but is not limited to, sapphire, aluminum nitride, gallium nitride, silicon, and silicon carbide, and the substrate 101 can be a planar substrate or a planar substrate. In this application, the substrate 101 is a transparent substrate.

[0037] like Figures 1-2As shown in the embodiment of the present application, the light-emitting epitaxial layer 102 comprises a first semiconductor layer 1021, a light-emitting layer 1022 and a second semiconductor layer 1023 which are stacked in sequence, the first semiconductor layer 1021 is arranged on the substrate 101, the light-emitting layer 1022 is arranged on the first semiconductor layer 1021, and the second semiconductor layer 1023 is arranged on the light-emitting layer 1022. The first semiconductor layer 1021 and the second semiconductor layer 1023 are semiconductor layers of different types, one of which is a P-type semiconductor layer and the other is an N-type semiconductor layer. In the P-type semiconductor layer, holes are arranged to provide the light-emitting layer 1022, and in the N-type semiconductor layer, electrons are arranged to provide the light-emitting layer 1022. When a voltage is applied to the first semiconductor layer 1021 and the second semiconductor layer 1023, the holes in the P-type semiconductor layer and the photons in the N-type semiconductor layer recombine in the light-emitting layer 1022, and then emit energy in the form of photons, thereby causing the light-emitting epitaxial layer 102 structure to emit light.

[0038] As shown in the embodiment of the present application, the light-emitting epitaxial layer 102 comprises a first semiconductor layer 1021, a light-emitting layer 1022 and a second semiconductor layer 1023 which are stacked in sequence, the first semiconductor layer 1021 is arranged on the substrate 101, the light-emitting layer 1022 is arranged on the first semiconductor layer 1021, and the second semiconductor layer 1023 is arranged on the light-emitting layer 1022. The first semiconductor layer 1021 and the second semiconductor layer 1023 are semiconductor layers of different types, one of which is a P-type semiconductor layer and the other is an N-type semiconductor layer. In the P-type semiconductor layer, holes are arranged to provide the light-emitting layer 1022, and in the N-type semiconductor layer, electrons are arranged to provide the light-emitting layer 1022. When a voltage is applied to the first semiconductor layer 1021 and the second semiconductor layer 1023, the holes in the P-type semiconductor layer and the photons in the N-type semiconductor layer recombine in the light-emitting layer 1022, and then emit energy in the form of photons, thereby causing the light-emitting epitaxial layer 102 structure to emit light. Figures 1-2 As shown in the embodiment of the present application, the light-emitting epitaxial layer 102 comprises a first semiconductor layer 1021, a light-emitting layer 1022 and a second semiconductor layer 1023 which are stacked in sequence, the first semiconductor layer 1021 is arranged on the substrate 101, the light-emitting layer 1022 is arranged on the first semiconductor layer 1021, and the second semiconductor layer 1023 is arranged on the light-emitting layer 1022. The first semiconductor layer 1021 and the second semiconductor layer 1023 are semiconductor layers of different types, one of which is a P-type semiconductor layer and the other is an N-type semiconductor layer. In the P-type semiconductor layer, holes are arranged to provide the light-emitting layer 1022, and in the N-type semiconductor layer, electrons are arranged to provide the light-emitting layer 1022. When a voltage is applied to the first semiconductor layer 1021 and the second semiconductor layer 1023, the holes in the P-type semiconductor layer and the photons in the N-type semiconductor layer recombine in the light-emitting layer 1022, and then emit energy in the form of photons, thereby causing the light-emitting epitaxial layer 102 structure to emit light.

[0039] As shown in the embodiment of the present application, the light-emitting epitaxial layer 102 comprises a first semiconductor layer 1021, a light-emitting layer 1022 and a second semiconductor layer 1023 which are stacked in sequence, the first semiconductor layer 1021 is arranged on the substrate 101, the light-emitting layer 1022 is arranged on the first semiconductor layer 1021, and the second semiconductor layer 1023 is arranged on the light-emitting layer 1022. The first semiconductor layer 1021 and the second semiconductor layer 1023 are semiconductor layers of different types, one of which is a P-type semiconductor layer and the other is an N-type semiconductor layer. In the P-type semiconductor layer, holes are arranged to provide the light-emitting layer 1022, and in the N-type semiconductor layer, electrons are arranged to provide the light-emitting layer 1022. When a voltage is applied to the first semiconductor layer 1021 and the second semiconductor layer 1023, the holes in the P-type semiconductor layer and the photons in the N-type semiconductor layer recombine in the light-emitting layer 1022, and then emit energy in the form of photons, thereby causing the light-emitting epitaxial layer 102 structure to emit light. Figures 1-2 As shown in the embodiment of the present application, the light-emitting epitaxial layer 102 comprises a first semiconductor layer 1021, a light-emitting layer 1022 and a second semiconductor layer 1023 which are stacked in sequence, the first semiconductor layer 1021 is arranged on the substrate 101, the light-emitting layer 1022 is arranged on the first semiconductor layer 1021, and the second semiconductor layer 1023 is arranged on the light-emitting layer 1022. The first semiconductor layer 1021 and the second semiconductor layer 1023 are semiconductor layers of different types, one of which is a P-type semiconductor layer and the other is an N-type semiconductor layer. In the P-type semiconductor layer, holes are arranged to provide the light-emitting layer 1022, and in the N-type semiconductor layer, electrons are arranged to provide the light-emitting layer 1022. When a voltage is applied to the first semiconductor layer 1021 and the second semiconductor layer 1023, the holes in the P-type semiconductor layer and the photons in the N-type semiconductor layer recombine in the light-emitting layer 1022, and then emit energy in the form of photons, thereby causing the light-emitting epitaxial layer 102 structure to emit light.

[0040] As shown in the embodiment of the present application, the light-emitting epitaxial layer 102 comprises a first semiconductor layer 1021, a light-emitting layer 1022 and a second semiconductor layer 1023 which are stacked in sequence, the first semiconductor layer 1021 is arranged on the substrate 101, the light-emitting layer 1022 is arranged on the first semiconductor layer 1021, and the second semiconductor layer 1023 is arranged on the light-emitting layer 1022. The first semiconductor layer 1021 and the second semiconductor layer 1023 are semiconductor layers of different types, one of which is a P-type semiconductor layer and the other is an N-type semiconductor layer. In the P-type semiconductor layer, holes are arranged to provide the light-emitting layer 1022, and in the N-type semiconductor layer, electrons are arranged to provide the light-emitting layer 1022. When a voltage is applied to the first semiconductor layer 1021 and the second semiconductor layer 1023, the holes in the P-type semiconductor layer and the photons in the N-type semiconductor layer recombine in the light-emitting layer 1022, and then emit energy in the form of photons, thereby causing the light-emitting epitaxial layer 102 structure to emit light. Figures 1-2As shown, in one embodiment of this application, the first semiconductor layer 1021 is an N-type semiconductor layer with a high electron content. The first semiconductor layer 1021 is doped with donor impurities, such as silicon (Si) or tellurium (Te). In this embodiment, the first semiconductor layer 1021 includes an N-type gallium nitride (GaN) layer. The light-emitting layer 1022 can be a quantum well light-emitting layer, an intrinsic semiconductor layer, or a lightly doped semiconductor layer. In this embodiment, the light-emitting layer 1022 includes a periodically stacked potential well layer and a potential barrier layer. The material of the barrier layer includes, for example, a GaN / AlGaN superlattice structure, and the material of the potential well layer is, for example, InGaN. The use of a modulation-doped GaN / AlGaN superlattice structure in the light-emitting layer 1022 can effectively guide the impulse current, allowing the pulse current to conduct laterally within the two-dimensional electron gas of the GaN / AlGaN structure, resulting in a more uniform pulse current density distribution and effectively improving the recombination efficiency of electrons and holes. The second semiconductor layer 1023 is a P-type semiconductor layer with a large number of holes, and the second semiconductor layer 1023 is doped with acceptor impurities, such as magnesium (Mg) or zinc (Zn). In this embodiment, the second semiconductor layer 1023 includes a P-type gallium nitride (GaN) layer.

[0041] like Figures 1-2 As shown, in this application, the wavelength of light emitted by the light-emitting epitaxial layer 102 can be adjusted by adjusting the aluminum content in gallium nitride. In one embodiment of this application, the first semiconductor layer 1021 may further include an N-type aluminum gallium nitride (AlGaN) layer, and the N-type aluminum gallium nitride (AlGaN) layer is disposed between the N-type gallium nitride layer and the light-emitting layer 1022. The second semiconductor layer 1023 may further include a P-type aluminum gallium nitride (AlGaN) layer, and the P-type aluminum gallium nitride (AlGaN) layer is disposed between the P-type gallium nitride layer and the light-emitting layer 1022. In this application, the wavelength range of light emitted by the light-emitting epitaxial layer 102 is, for example, 220nm to 420nm. That is, the light-emitting epitaxial layer 102 can emit violet and ultraviolet light. Light in this wavelength range has a short wavelength and a high energy level, and can be completely absorbed by the light conversion layer 108. Furthermore, the wavelength of the formed light-emitting diode is short, and light mixing will not occur. In this application, the half-width at half maximum (FHWM) of the light emitted by the light-emitting epitaxial layer 102 is less than or equal to 10 nm, i.e., FHWM ≤ 10 nm. Furthermore, the standard deviation of the wavelength of the light emitted by each light-emitting diode chip 100 is less than or equal to 2.

[0042] like Figures 1-2 As shown, in this application, an isolation trench is formed around the light-emitting epitaxial layer 102. The isolation trench is formed around the light-emitting epitaxial layer 102, that is, the edge of the light-emitting epitaxial layer 102 and the edge of the substrate 101 are spaced apart, thus forming an isolation trench around the light-emitting epitaxial layer 102.

[0043] likeFigure 1 As shown in one embodiment of this application, a transparent conductive layer 103 is provided on the surface of the second semiconductor layer 1023. The transparent conductive layer 103 can be a metal oxide or alloy oxide deposited or sputtered onto the second semiconductor layer 1023. Specifically, it can be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or azo oxide (AzO), or it can be an oxide of alloys such as nickel gold (NiAu) or ruthenium gold (RuAu). The thickness of the transparent conductive layer 103 is, for example, 5 nm to 300 nm. When the electrode contacts the transparent conductive layer 103, it can produce a good conductive effect with the electrode.

[0044] like Figure 1 As shown, in one embodiment of this application, an insulating layer 104 is provided on the surface of the transparent conductive layer 103. The insulating layer 104 can be made of materials such as silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF), or zinc oxide (ZnO). On the first epitaxial structure, the thickness of the insulating layer 104 is, for example, 100 nm to 600 nm. Forming a thicker insulating layer 104 can prevent damage to the interior of the light-emitting diode during soldering and prevent solder penetration.

[0045] like Figure 1 As shown in one embodiment of this application, a reflective layer 105 is provided on the surface of the insulating layer 104 and in the isolation trench. The reflective layer 105 reflects light emitted towards the second semiconductor layer 1023 and light emitted towards the light-emitting epitaxial layer 102, and emits light towards the first semiconductor layer 1021. When the isolation trench is covered by the reflective layer 105, all the light emitted by the light-emitting epitaxial layer 102 can be emitted from the first semiconductor layer 1021, increasing the brightness of the light-emitting diode chip 100. Specifically, the reflective layer 105 can be a distributed Bragg reflection (DBR) layer 105, or a silver reflective layer 105 or an aluminum reflective layer 105. The thickness of the reflective layer 105 is, for example, 300 nm to 5000 nm.

[0046] like Figure 1As shown, in one embodiment of this application, a first electrode 106 electrically connected to the first semiconductor layer 1021 and a second electrode 107 electrically connected to the second semiconductor layer 1023 are further provided. In this embodiment, the first electrode 106 includes a first connection electrode 1061 connected to the first semiconductor layer 1021, and the second electrode 107 includes a second connection electrode 1071 connected to the second semiconductor layer 1023. One end of the first connection electrode 1061 extends into and is connected to the first semiconductor layer 1021, and the other end extends into the reflective layer 105. One end of the second connection electrode 1071 is connected to the transparent conductive layer 103, and the other end extends into the reflective layer 105. The first connection electrode 1061 and the second connection electrode 1071 can be made of a metal or alloy with good conductivity. The first connection electrode 1061 is, for example, made of Ni, Au, or an alloy thereof. The second connection electrode 1071 is, for example, made of Ti, Al, Ni, Au, or an alloy of two or more of these.

[0047] like Figure 1 As shown, in one embodiment of this application, the first electrode 106 further includes a first welding electrode 1062, and the second electrode 107 further includes a second welding electrode 1072. The first welding electrode 1062 is connected to the first connecting electrode 1061, and the second welding electrode 1072 is connected to the second connecting electrode 1071.

[0048] like Figure 1 As shown, in one embodiment of this application, the first connecting electrode 1061 and the second connecting electrode 1071 are encapsulated in the reflective layer 105. One end of the first welding electrode 1062 covers a portion of the first connecting electrode 1061, and the other end extends out of the reflective layer 105. One end of the second welding electrode 1072 covers a portion of the second connecting electrode 1071, and the other end extends out of the reflective layer 105. The first welding electrode 1062 and the second welding electrode 1072 may comprise multiple metal layers, such as one, two, or more of the following metal layers: chromium (Cr) metal layer, titanium (Ti) metal layer, aluminum (Al) metal layer, platinum (Pt) metal layer, nickel (Ni) metal layer, gold (Au) metal layer, and tin (Sn) metal layer. The thickness of the first welding electrode 1062 and the second welding electrode 1072 is, for example, 1 μm to 50 μm.

[0049] like Figure 1As shown, in an embodiment of the present application, a light conversion layer 108 is arranged on the side of the substrate 101 opposite to the light emitting epitaxial layer. The light conversion layer 108 can convert light into a desired color. The light conversion layer 108 can be made of encapsulating glue and fluorescent powder, or made of a fluorescent film. In different products, the light conversion layer 108 has different light colors. In some embodiments, a liquid crystal display 300 is needed to be formed, and the light emitting diode chip 100 provided by the present application can be used as a backlight source. In this case, the light conversion layer 108 is made of a white light conversion layer to form a white light emitting diode chip. When the white light emitting diode chip is formed, the light emitting diode chip 100 can convert violet light or ultraviolet light emitted by the light emitting epitaxial layer into white light, and the light conversion layer 108 is made of encapsulating glue and white fluorescent powder. In other embodiments, for example, a light emitting diode display is needed to be formed, and the light conversion layer 108 is made of a red light conversion layer, a blue light conversion layer and a green light conversion layer to form a red light emitting diode chip, a blue light emitting diode chip and a green light emitting diode chip. When the red light emitting diode chip is formed, the light conversion layer 108 is made of a red light conversion layer, and the light emitting diode chip 100 can convert violet light or ultraviolet light emitted by the light emitting epitaxial layer into red light, and the light conversion layer 108 is made of encapsulating glue and red fluorescent powder. When the blue light emitting diode chip is formed, the light conversion layer 108 is made of a blue light conversion layer, and the light emitting diode chip 100 can convert violet light or ultraviolet light emitted by the light emitting epitaxial layer into blue light, and the light conversion layer 108 is made of encapsulating glue and blue fluorescent powder. When the green light emitting diode chip is formed, the light conversion layer 108 is made of a green light conversion layer, and the light emitting diode chip 100 can convert violet light or ultraviolet light emitted by the light emitting epitaxial layer into green light, and the light conversion layer 108 is made of encapsulating glue and green fluorescent powder. In this case, the red light emitting diode chip forms a red sub-pixel, the blue light emitting diode chip forms a blue sub-pixel, and the green light emitting diode chip forms a green sub-pixel. Because the light emitting epitaxial layers 102 of the red light emitting diode chip, the blue light emitting diode chip and the green light emitting diode chip are the same kind of light emitting epitaxial layer 102, a common driving circuit can be used to drive light emitting diode chips 100 of different colors, and the structure of the driving circuit can be simplified.

[0050] As Figure 1As shown, in one embodiment of this application, a light conversion layer 108 is disposed on one side of the substrate 101 opposite to the light-emitting epitaxial layer 102, and the coverage area of ​​the light conversion layer 108 is larger than the area of ​​the substrate 101, so as to convert the light emitted by the light-emitting epitaxial layer 102 into light of other colors. The distance of the light conversion layer 108 beyond the substrate 101 is, for example, 12nm to 50nm. A groove is formed between the light conversion layer 108, the substrate 101, and the functional layer on the substrate 101. An isolation layer 109 is also disposed in the groove. The isolation layer 109 is disposed around the substrate 101 and the reflective layer 105 on the substrate 101, and covers the sides of the substrate 101 and the reflective layer 105. The isolation layer 109 is an opaque white or black anti-permeability layer, wherein the material of the white or black anti-permeability layer is, for example, silicone encapsulation resin, acrylate, or epoxy resin. The isolation layer 109 can cover the original light color of the light-emitting epitaxial layer 102, preventing the light emitted by the light-emitting epitaxial layer 102 from mixing with the light emitted through the light conversion layer 108, and at the same time preventing light from emanating from the side of the light-emitting diode chip 100.

[0051] like Figure 3 As shown, this application also provides a liquid crystal display panel 200, which includes an array substrate 201 and a color filter substrate 202 disposed opposite each other. A frame 203 is disposed between the array substrate 201 and the color filter substrate 202, the frame 203 bonding the color filter substrate 202 and the array substrate 201 together, and forming a cell space between the color filter substrate 202 and the array substrate 201. The cell space can be filled with liquid crystal molecules to form a liquid crystal layer 204.

[0052] like Figure 3 As shown, in this application, the array substrate 201 includes a glass substrate 2011 and a thin film transistor (TFT) 2012 disposed on the surface of the glass substrate 2011. A transparent electrode layer 2051 is also connected to the TFT 2012, and the transparent electrode layer 2051 is located on the side of the TFT 2012 near the liquid crystal layer 204 to drive the liquid crystal molecules to rotate.

[0053] like Figure 3 As shown in this application, the color filter substrate 202 includes a glass substrate 2021 and a color filter 206 disposed on the surface of the glass substrate 2021. The color filter 206 may also include a black matrix layer 2061 disposed on the glass substrate 2021. The black matrix layer 2061 can prevent light leakage. The black matrix layer 2061 is, for example, a photosensitive resin composition. That is, when forming the black matrix layer 2061, the photosensitive resin composition can be coated on the glass substrate 2021 first, and then the black matrix layer 2061 can be formed by exposure and development.

[0054] As shown in Figure 3 the color filter 206 further comprises a filter layer 2062, which is located on the glass substrate 2021 and covers the black matrix layer 2061. The filter layer 2062 can comprise a first filter layer 2063, a second filter layer 2064 and a third filter layer 2065. The first filter layer 2063 can be a red filter layer, the second filter layer 2064 can be a green filter layer, and the third filter layer 2065 can be a blue filter layer. The liquid crystal display panel 200 can separate red, green and blue light through the first filter layer 2063, the second filter layer 2064 and the third filter layer 2065 to display a color image. The first filter layer 2063, the second filter layer 2064 and the third filter layer 2065 are respectively located between the black matrix layers 2061, for example, the second filter layer 2064 is located between the first filter layer and the third filter layer. The first filter layer 2063 and the second filter layer 2064 contact and cover the same black matrix layer 2061. As can be seen from Figure 3 , the first filter layer 2063 and the second filter layer 2064 simultaneously cover the leftmost black matrix layer 2061. Therefore, it can be concluded that the black matrix layer 2061 can connect the first filter layer 2063 and the second filter layer 2064, that is, connect the red filter layer and the green filter layer. The black matrix layer 2061 can connect the second filter layer 2064 and the third filter layer 2065, that is, connect the green filter layer and the blue filter layer; the black matrix layer 2061 can connect the third filter layer 2065 and the first filter layer 2063, that is, connect the blue filter layer and the red filter layer. The transmittance of the first filter layer 2063 is less than that of the second filter layer 2064, but greater than that of the third filter layer 2065. The transmittance of the second filter layer 2064, the first filter layer 2063 and the third filter layer 2065 is, for example, 3.7:1.4:1.

[0055] As shown in Figure 3 in this embodiment, a transparent electrode layer 2052 is further provided on the color filter 206, which is located on the side of the color filter 206 close to the liquid crystal to drive the liquid crystal to rotate.

[0056] As shown in Figure 3As shown, in one embodiment of this application, an antireflection plate 208 is disposed between the color filter substrate 202 and the liquid crystal layer 204. The edge of the antireflection plate 208 overlaps with the edge of the color filter substrate 202 and extends out of the liquid crystal layer 204. Specifically, the refractive index of the antireflection plate 208 is, for example, 1.55 to 1.7, and for example, 1.55 or 1.59, or for example, 1.65 or 1.7. The antireflection plate 208 can be made of one or more materials such as alumina (Al2O3), cerium trifluoride (CeF3), lanthanum fluoride (LaF3), or yttrium fluoride (YF3). When forming the antireflection plate 208, one or more of the following substances can be vapor-deposited or sputtered to form the antireflection plate 208. The thickness of the antireflective coating 208 can be set according to requirements, for example, from 10nm to 300nm. In some embodiments, the antireflective coating 208 is, for example, 10nm, 20nm, 50nm or 90nm. In other embodiments, the thickness of the antireflective coating 208 is, for example, 100nm, 150nm, 200nm or 300nm.

[0057] like Figure 3 As shown, in this application, an anti-reflection plate 208 is provided between the color filter substrate 202 and the liquid crystal layer 204. Furthermore, the refractive index of the anti-reflection plate 208 is similar to that of the liquid crystal layer 204, which can increase the light emission effect of the liquid crystal layer 204 and reduce energy consumption.

[0058] like Figure 3 and Figure 4 As shown, in one embodiment of this application, a frame 203 bonds the color filter substrate 202 and the array substrate 201 to encapsulate the liquid crystal layer 204 between the color filter substrate 202 and the array substrate 201. Specifically, the frame 203 is disposed between the antireflection plate 208 and the array substrate 201. In this application, in the cross-sectional direction of the liquid crystal display panel, the width of the frame 203 gradually increases from the side closer to the color filter substrate 202 to the side closer to the array substrate 201. In the display surface direction of the liquid crystal display panel, on both sides of the liquid crystal display panel, from the side closer to the top of the liquid crystal display panel to the side closer to the bottom of the liquid crystal display panel, the width of the frame 203 gradually increases. The widths of the frame 203 at the top and bottom of the liquid crystal display panel are fixed values, and the width of the frame 203 at the top of the liquid crystal display panel is smaller than the width of the frame 203 at the bottom of the liquid crystal display panel. Figure 4 As shown, the top of the LCD panel is the side where the image is displayed facing upwards when the LCD panel is working, and the bottom of the LCD panel is the side where the image is displayed facing downwards when the LCD panel is working.

[0059] like Figure 3As shown in the embodiment of the present application, the glue frame 203 is located outside the liquid crystal layer 204 to encapsulate the liquid crystal layer 204. In the cross-sectional direction of the liquid crystal display panel, the side wall of the glue frame 203 is perpendicular to the plane of the array substrate 201 and the anti-reflection plate 208 on the side close to the liquid crystal layer 204, and the thickness of the side wall of the glue frame 203 gradually increases on the side far from the liquid crystal layer 204. Therefore, in the cross-sectional direction of the liquid crystal display panel, the glue frame 203 is in the shape of a right triangle or a right trapezoid. On the side close to the liquid crystal layer 204, the side wall of the glue frame 203 is perpendicular to the plane of the array substrate 201 and the anti-reflection plate 208, which can avoid the inner liquid crystal of the liquid crystal layer 204 from being clamped at the included angle formed by the glue frame 203, the array substrate 201 and the anti-reflection plate 208. On the side far from the liquid crystal layer 204, the thickness of the side wall of the glue frame 203 gradually increases, which can ensure the stability of the glue frame 203 and avoid the stress caused by the depth of the liquid crystal from pressing the glue frame 203.

[0060] As shown in the embodiment of the present application, Figure 4 in the display direction of the liquid crystal display panel, the width of the glue frame 203 at the top of the liquid crystal display panel and the bottom of the liquid crystal display panel is a fixed value, and the width of the glue frame 203 at the top of the liquid crystal display panel is greater than the width of the glue frame 203 at the bottom of the liquid crystal display panel. On the side of the liquid crystal display panel from the side close to the top of the liquid crystal display panel to the side close to the bottom of the liquid crystal display panel, the width of the glue frame 203 gradually increases. In the display direction of the liquid crystal display panel, the side wall of the glue frame 203 is perpendicular to the plane of the array substrate 201 and the anti-reflection plate 208 on the side close to the liquid crystal layer 204, and the thickness of the side wall of the glue frame 203 gradually increases on the side far from the liquid crystal layer 204. In the display direction of the liquid crystal display panel, the glue frame 203 is in the shape of a right triangle or a right trapezoid.

[0061] As shown in the embodiment of the present application, Figure 3 and Figure 4 in some embodiments of the present application, in the cross-sectional direction, the thickness of the side wall of the glue frame 203 gradually increases on the side far from the liquid crystal layer 204, and the angle between the side wall of the glue frame 203 and the array substrate 201 is in the range of, for example, 75°-89°. In the display direction of the liquid crystal display panel, the thickness of the side wall of the glue frame 203 gradually increases on the side far from the liquid crystal layer 204, and the angle between the side wall of the glue frame 203 and the side of the bottom of the display panel is in the range of, for example, 75°-89°.

[0062] As shown in the embodiment of the present application, Figure 3 and Figure 4 in some embodiments of the present application, the glue frame 203 can be made of an opaque material, such as black glue or other dark materials. Specifically, the glue frame 203 can be made of one or more of polyethylene resin, silica gel or epoxy plastic packaging material.

[0063] like Figure 3 As shown, in this application, a water-resistant film 209 is provided on the side of the frame 203 away from the liquid crystal layer 204. The water-resistant film 209 covers the side of the frame 203 away from the liquid crystal layer 204, and is smoothly connected to the array substrate 201 and the antireflection plate 208. In one embodiment of this application, the water-resistant film 209 may be made of aluminum nitride (AlN) or silicon nitride (SiN). Specifically, the water-resistant film 209 may be formed by vapor deposition or sputtering. The thickness of the water-resistant film 209 is, for example, 100 nm to 5000 nm. In some embodiments, the thickness of the water-resistant film 209 is, for example, 100 nm, 300 nm, 500 nm, or 800 nm. In other embodiments, the thickness of the water-resistant film 209 is, for example, 1000 nm, 3000 nm, or 5000 nm.

[0064] like Figure 3 As shown in this application, in the cross-sectional direction of the liquid crystal display panel, the thickness of the waterproof film 209 remains constant from the side near the color filter substrate 202 to the side near the array substrate 201. Therefore, the uniformly thick waterproof film 209 forms a support with the frame 203, increasing the strength of the frame 203.

[0065] like Figure 4 As shown in this application, in the display direction of the liquid crystal display panel, on the side of the liquid crystal display panel, in order to adjust the overall shape of the liquid crystal display panel, the inner side of the waterproof film 209 is attached to the frame 203, and the outer side forms a rectangle that coincides with the outline of the liquid crystal display panel.

[0066] like Figure 3 As shown, a light-shielding layer 210 is provided between the antireflective coating 208 and the liquid crystal layer 204. The light-shielding layer 210 is made of an opaque material, such as black or other dark-colored materials. The edge of the light-shielding layer 210 is flush with the edge of the antireflective coating 208 and covers the frame 203 and the waterproof film 209. In this way, the light-shielding layer 210 completely covers the edge of the array substrate 201, and the frame 203 completely blocks the edge of the color filter substrate 202. When light passes through the array substrate 201, the light that is refracted or scattered and reaches the edge of the array substrate 201 is blocked by the frame 203 made of light-shielding material, while a small amount of transmitted light is blocked by the light-shielding layer 210. This avoids light leakage at the edge of the color filter substrate 202 due to issues with cutting precision, thus preventing light leakage caused by processing inaccuracies.

[0067] like Figure 3As shown in the drawings, in the present application, a polarizer 207 is arranged on the side of the array substrate 201 away from the color filter substrate 202, and on the side of the color filter substrate 202 away from the array substrate 201. The polarizer 207 arranged on the array substrate 201 and the color filter substrate 202 can make the light pass in a single direction. At this time, when the backlight emits light, the light passes through the polarizer 207 on the array substrate 201, and is irradiated on the array substrate 201, and then passes through the array substrate 201, and is transmitted from the color filter substrate 202 and the polarizer 207 on the color filter substrate 202 after rotating in the liquid crystal, thereby displaying the picture.

[0068] As shown in the drawings, Figure 3 In some embodiments, the color filter substrate 202 is usually the substrate facing the user, and the appearance of the entire display screen, display or display device needs to be ensured. The polarizer 207 on the color filter substrate 202 can extend to the edge of the color filter substrate 202. In this way, the side of the color filter substrate 202 facing the user will not have a conspicuous step due to the presence of the polarizer 207, and the appearance of the display screen, display or display device can be improved. Of course, the polarizer 207 arranged on the array substrate 201 can only cover the area of the array substrate 201 inside the frame, so that the material of the polarizer 207 can be saved, and the cost can be reduced.

[0069] As shown in the drawings, Figure 5 The present application also provides a liquid crystal display 300, which comprises a back plate 301, a backlight arranged in the back plate 301, and a liquid crystal display panel 200 fixed on the casing.

[0070] As shown in the drawings, Figure 5 In the present application, a plurality of light-emitting diode chips 100 are mounted on the bottom wall of the back plate 301 to form a backlight. In the present embodiment, the light-emitting diode chip 100 is a white light-emitting diode chip. In the present application, the light-emitting diode chip 100 shown in, for example, Figure 1 As shown in the drawings, the light-emitting diode chip 100 is used as a backlight, which can increase the brightness of the display panel, and at the same time avoid the problem of light shadow.

[0071] As shown in the drawings, Figure 5 In the present application, a plurality of diffusion plates 304 and optical films 305 are arranged on the plurality of light-emitting diode chips 100 and on the back plate 301. The light of the light-emitting diode chip 100 passes through the diffusion plate 304 and the optical film 305 in turn to the back of the liquid crystal display panel 200. Among them, the diffusion plate 304 diffuses the light emitted by the light-emitting diode chip 100, so that the light is more uniform. At the same time, the diffusion plate 304 supports the optical film 305 arranged thereon.

[0072] As shown in the drawings, Figure 5As shown in the drawings, in the present application, the optical film 305 is arranged on the diffusion plate 304, for diffusing and brightening light, etc., to obtain uniform and high-brightness light. Specifically, the optical film 305 includes a diffusion sheet, a brightening sheet and a composite film. The optical film 305 is combined in different collocation modes by one or more different film sheets, and different brightness gains can be obtained.

[0073] As shown in the drawings, Figure 5 As shown in the drawings, in the present application, the liquid crystal display panel 200 is arranged on the optical film 305. The circuit board 306 can be mounted on the bottom wall of the back plate 301. The circuit board 306 can be a PCB substrate or a flexible circuit board 306, and the driving circuit can be arranged on the circuit board 306. The circuit board 306 is electrically connected to the liquid crystal display panel 200 and the backlight, to adjust the brightness of the backlight and control the display screen of the liquid crystal display panel 200.

[0074] In summary, the present application provides a liquid crystal display panel and a liquid crystal display, which include an array substrate, a color film substrate arranged in a box with the array substrate, a glue frame for pasting the color film substrate and the array substrate to form a box space, and a liquid crystal layer arranged in the box space. In the present application, the stability of the liquid crystal display panel can be increased by limiting the shape of the glue frame.

[0075] The above description is only the preferred embodiment of the present application and the explanation of the applied technical principles. Those skilled in the art should understand that the application scope involved in the present application is not limited to the technical solutions formed by the specific combination of the above technical features, and also covers other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the application concept, such as the technical solutions formed by replacing the above features with the technical features disclosed in the present application (but not limited to) having similar functions.

[0076] In addition to the technical features described in the specification, the remaining technical features are known to those skilled in the art. In order to highlight the innovative features of the present application, the remaining technical features will not be described here.

Claims

1. A liquid crystal display, characterized by comprising: The liquid crystal display comprises: a back plate; a light emitting diode chip arranged on a bottom wall of the back plate, the light emitting diode chip comprising a substrate, a light emitting epitaxial layer arranged on the substrate, and a light conversion layer arranged on a light emitting side of the light emitting diode chip; a diffusion plate arranged on the light emitting diode chip; an optical film arranged on the diffusion plate; and a liquid crystal display panel arranged on the optical film, the liquid crystal display panel comprising: an array substrate; a color film substrate arranged in a cell with the array substrate; a frame for bonding the color film substrate and the array substrate to form a cell space, and in a cross-sectional direction of the liquid crystal display panel, the width of the frame gradually increases from a side close to the color film substrate to a side close to the array substrate; and a liquid crystal layer arranged in the cell space; wherein, in the cross-sectional direction of the liquid crystal display panel, the side wall of the frame close to the liquid crystal layer is arranged perpendicularly to the plane of the array substrate; in the cross-sectional direction of the liquid crystal display panel, the angle between the side wall of the frame and the array substrate is in a range of 75° to 89° at a side away from the liquid crystal layer; in a display surface direction of the liquid crystal display panel, the width of the frame gradually increases from a side close to a top of the liquid crystal display panel to a side close to a bottom of the liquid crystal display panel.

2. The liquid crystal display of claim 1, wherein, A buffer layer is further arranged on the substrate, the buffer layer being an aluminum nitride layer or an aluminum gallium nitride layer.

3. The liquid crystal display of claim 1, wherein, In the display surface direction of the liquid crystal display panel, the width of the frame at the top of the liquid crystal display panel is smaller than the width of the frame at the bottom of the liquid crystal display panel.

4. The liquid crystal display of claim 1, wherein, A water-resistant film is arranged at a side of the frame away from the liquid crystal layer, in the cross-sectional direction of the liquid crystal display panel, the thickness of the water-resistant film remains unchanged, in the display surface direction of the liquid crystal display panel, the inner side of the water-resistant film is bonded to the frame, and the outer side forms a rectangle which coincides with the outline of the liquid crystal display panel.

5. The liquid crystal display of claim 4, wherein, A transmittance enhancement plate is arranged between the color film substrate and the liquid crystal layer.

6. The liquid crystal display of claim 5, wherein, The refractive index of the transmittance enhancement plate is 1.55 to 1.

7.

7. The liquid crystal display of claim 6, wherein, A light shielding layer is arranged between the transmittance enhancement plate and the frame, the edge of the light shielding layer is flush with the edge of the transmittance enhancement plate, and the light shielding layer covers the frame and the water-resistant film.

8. The liquid crystal display of claim 1, wherein, The substrate is a transparent substrate.

9. The liquid crystal display of claim 1, wherein, The light emitting epitaxial layer comprises a first semiconductor layer, a light emitting layer, and a second semiconductor layer arranged in a stack.

10. The liquid crystal display of claim 9, wherein, The light emitting layer adopts a modulated doped GaN / AlGaN superlattice structure.

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