A coaxial-fed energy selective protection antenna

Abstract

This invention discloses a coaxial-fed energy selective shielded antenna, belonging to the field of wireless communication technology. The antenna includes a coaxial feed probe, an upper dielectric substrate, and a lower dielectric substrate. The coaxial feed probe passes through both the upper and lower dielectric substrates. At least one pair of metal pads are disposed on the lower dielectric substrate. Each pair of metal pads includes a proximal metal pad close to the coaxial feed probe and a distal metal pad away from the coaxial feed probe. The proximal metal pad is tightly connected to the coaxial feed probe. A gap for soldering semiconductor devices is left between the proximal and corresponding distal metal pads. A dielectric cutout area for protecting the semiconductor devices is formed on the upper dielectric substrate. The coaxial-fed energy selective shielded antenna ensures electromagnetic protection for downstream electronic information equipment under high radiation conditions without affecting the normal operation of the coaxial-fed antenna.

Description

Technical Field

[0001] This invention belongs to the field of wireless communication technology, and particularly relates to a coaxial-fed energy selective protection antenna. Background Technology

[0002] With the continuous development of wireless communication technology, the electromagnetic environment is becoming increasingly complex. Electronic information equipment faces the threat of high-intensity electromagnetic radiation fields. How to achieve electromagnetic protection for electronic information systems while ensuring their normal operation has become an urgent problem to be solved. As the radio frequency front-end of electronic information systems, antennas are the main channel for converting electromagnetic fields in free space into guided waves in microwave circuits, and generally possess characteristics of high receiving efficiency and high gain. If a high-intensity radiation field couples into the electronic information system from the antenna end, it may generate surge voltages and currents, causing significant damage or destruction to the electronic information system.

[0003] Currently, energy domain protection methods for electronic information systems mainly include energy-selective shields, energy-selective shield antennas, and circuit-level energy-selective shield devices. The primary method for implementing energy-selective shield antennas is to load semiconductor devices onto a microstrip feeder structure to achieve adaptive strong electromagnetic protection.

[0004] Due to limitations imposed by equipment usage conditions and spatial environment, antenna design requires comprehensive consideration of factors such as size, dielectric loss, peak gain, and external interfaces. Currently, conformal microstrip antennas are mostly chosen for wireless sensor network devices. A microstrip antenna is formed by laying a thin conductive sheet on a dielectric substrate with a conductive ground plane. It is fed by a microstrip line or coaxial line, exciting a radio frequency electromagnetic field between the conductive sheet and the ground plane, which radiates outward through the gaps between the sheet and the ground plane. Compared to other antennas, microstrip antennas have advantages such as low profile, small size, and ease of conformal design with the surface of carriers such as satellites.

[0005] For designs requiring high mechanical strength antennas and antennas exposed and fixed to the periphery of the device, coaxial-fed patch antennas are generally used. These antennas are fed through a coaxial line through the dielectric substrate at the antenna ground plane, ensuring the stability of the front structure of the antenna patch. However, because the metal feed line of the coaxial-fed antenna runs longitudinally through the dielectric substrate, there is no space around the feed line to install electromagnetic protection structures. Furthermore, electromagnetic protection cannot be achieved by modifying the structure of the patch above the dielectric substrate or the ground plane below. The design space for structural improvements is limited, and currently, there is still no mature design solution for a coaxial-fed protected antenna. Summary of the Invention

[0006] The purpose of this invention is to provide a coaxial-fed energy selective protection antenna that can ensure electromagnetic protection of back-end electronic information equipment under high radiation conditions without affecting the normal operation of the coaxial-fed antenna.

[0007] To achieve the above objectives, the present invention employs the following technical solution:

[0008] A coaxial-fed energy selective protection antenna includes a coaxial feed probe 4, wherein the coaxial-fed energy selective protection antenna includes an upper dielectric substrate 1-1 and a lower dielectric substrate 1-2;

[0009] The coaxial feed probe 4 passes through the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2;

[0010] At least one pair of metal pads are disposed on the lower dielectric substrate 1-2; each pair of metal pads includes a proximal metal pad 5-1 close to the coaxial feed probe and a distal metal pad 5-2 far from the coaxial feed probe; the proximal metal pad 5-1 is tightly connected to the coaxial feed probe 4; a gap for soldering semiconductor devices 6 is left between the proximal metal pad 5-1 and the corresponding distal metal pad 5-2;

[0011] The upper dielectric substrate 1-1 has a dielectric cutout area 3 for protecting the semiconductor device 6.

[0012] Furthermore, the medium cutout area 3 is a cubic area.

[0013] Furthermore, the number of the medium cutout regions 3 is 1;

[0014] The dielectric cutout area 3 corresponds to the position of the semiconductor device 6.

[0015] Furthermore, the medium hollow area 3 is multiple;

[0016] Each dielectric cutout area 3 corresponds one-to-one with the position of the corresponding semiconductor device 6.

[0017] Furthermore, the shape of the metal pad patch is rectangular.

[0018] Furthermore, the number of pairs of the metal pads is 4.

[0019] Furthermore, among the four near-end metal pad patches 5-1, the included angle between two adjacent near-end metal pad patches 5-1 is 90°.

[0020] Furthermore, a grounding metal via 8 is provided between each remote metal pad patch 5-2 and the metal ground plane 7;

[0021] The upper end of each grounding metal via 8 is connected to the corresponding far-end metal pad patch 5-2; the lower end of each grounding metal via 8 is connected to the metal grounding plate 7.

[0022] Furthermore, the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 are tightly connected through a multilayer board lamination process.

[0023] Furthermore, the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 have the same thickness.

[0024] In summary, the technical solution of the present invention has the following technical effects:

[0025] This invention divides the dielectric substrate of an existing coaxial-fed patch antenna into two layers: an upper dielectric substrate and a lower dielectric substrate. Metal pad patches (including near-end and corresponding far-end metal pad patches) are then laid on the upper surface of the lower dielectric substrate, with gaps between the near-end and far-end metal pad patches for soldering semiconductor devices. A corresponding cutout (i.e., a dielectric cutout area) in the upper dielectric substrate ensures sufficient height space to protect the semiconductor devices. This achieves the same result as the original coaxial-fed patch antenna without altering its dimensions or frequency band. While minimizing the impact on performance parameters such as gain, an electromagnetic protection structure is added to ensure electromagnetic protection of the electronic information system under high radiation conditions, while also guaranteeing its normal operation. This enhances the antenna's own strong electromagnetic protection capability and effectively curbs the threat of high-intensity irradiated electromagnetic waves. The coaxial-fed energy selective protection antenna of this invention effectively protects semiconductor devices, preventing them from being exposed in free space and ensuring the stability of the antenna protection structure. The protection efficiency of the coaxial-fed energy selective protection antenna of this invention can reach 21.7dB, realizing the integrated design of the electromagnetic protection structure and the coaxial-fed antenna, reducing the cross-sectional volume of the antenna system. Attached Figure Description

[0026] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the coaxial-fed energy selective protection antenna structure of the present invention;

[0028] Figure 2 A schematic diagram of an existing coaxial-fed patch antenna structure;

[0029] Figure 3 A schematic diagram of the S(1,1) curve for an existing coaxial-fed patch antenna;

[0030] Figure 4 Radiation pattern of existing coaxial-fed patch antennas

[0031] Figure 5 This is a schematic diagram of the S(1,1) curve of the coaxial-fed energy selective protection antenna of the present invention.

[0032] Figure 6 The radiation pattern of the coaxial-fed energy selective protection antenna of the present invention.

[0033] Figure 7 (a), (b), (c), and (d) in the figures are respectively the metal radiating patch, metal ground plane, protective structure area, and axonometric view of the coaxial-fed energy selective shielded antenna of the present invention;

[0034] Figure 8 This is a schematic diagram comparing the S-curves of the coaxial-fed energy selective protection antenna of the present invention in normal operation and protection states.

[0035] Figure 9 This is a schematic diagram comparing the radiation patterns of the coaxial-fed energy selective protection antenna in normal operation and protection mode according to the present invention.

[0036] Figure 10 The center direction of the coaxial-fed energy selective protection antenna of the present invention in normal operation and protection states ( A comparative diagram of gain-frequency curves (θ=0);

[0037] Figure 11 This is a schematic diagram of the equivalent circuit of the coaxial-fed energy selective protection antenna of the present invention under low-intensity irradiation and high-intensity irradiation. Detailed Implementation

[0038] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] Simulations were performed on the original coaxial-fed patch antenna. Using an S(1,1) parameter of -10dB as the boundary, its operating frequency band is 2.34-2.47GHz, with a bandwidth of approximately 130MHz. Its S(1,1) curve is shown below. Figure 3 As shown. The antenna's radiation pattern characteristics were observed using the center operating frequency of 2.41 GHz. directional pattern as follows Figure 4 As shown, the maximum gain of the main lobe reaches 7.5dB. Then, an electromagnetic protection structure is added to its structure. The design requirement is to minimize the impact on antenna performance parameters such as frequency band and gain before and after adding the electromagnetic protection structure.

[0040] Since the original coaxial feed probe of the coaxial feed type patch antenna runs longitudinally through the dielectric substrate from the metal ground plane and connects to the metal radiating patch 9, and the coaxial feed probe is surrounded by the dielectric substrate 1 material, it is impossible to carry out the design of the electromagnetic protection function of this antenna using the existing energy selective protection antenna design method.

[0041] Based on the above, this embodiment provides a coaxial-fed energy selective protection antenna, with reference to... Figure 1 This includes a coaxial feed probe 4. The coaxial-fed energy selective shielded antenna comprises an upper dielectric substrate 1-1 and a lower dielectric substrate 1-2, essentially dividing the dielectric substrate 1 of an existing coaxial-fed patch antenna into an upper dielectric substrate and a lower dielectric substrate. (Refer to...) Figure 2 The coaxial feed probe 4 passes through the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2.

[0042] Because diodes have a certain thickness, stacking two dielectric substrates together using a multilayer lamination process can easily damage the semiconductor device 6 due to high mechanical strength. Therefore, in this embodiment, a cubic region of a certain height and width (i.e., dielectric cutout region 3) is cut out from the upper dielectric substrate 1-1, centered on the coaxial feed probe 4. This dielectric cutout region can be 6.6*6.6*0.5mm (large enough to accommodate the semiconductor device 6, such as a diode), thus providing beneficial protection for the semiconductor device 6. This avoids damage to the semiconductor device 6 (such as a diode) due to mechanical impact. The position of the dielectric cutout region 3 corresponds to the position of the semiconductor device 6. If there is only one dielectric cutout region 3, it corresponds to the position of the semiconductor device 6. If there are multiple dielectric cutout regions 3, each dielectric cutout region 3 corresponds to one semiconductor device 6, and the positions of the dielectric cutout regions and semiconductor devices 6 are in a one-to-one correspondence.

[0043] In this embodiment, the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 are tightly connected through a multilayer lamination process. The upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 have the same thickness. The material of the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 is Teflom, with a dielectric constant of 2.65 and an operating frequency band of 2.34 to 2.46 GHz.

[0044] In this embodiment, at least one pair of metal pads are disposed on the lower dielectric substrate 1-2 to provide a location for soldering a semiconductor device 6 (such as a PIN diode). Each pair of metal pads includes a near-end metal pad 5-1 close to the coaxial feed probe and a far-end metal pad 5-2 far from the coaxial feed probe. A gap is provided between the near-end metal pad 5-1 and the corresponding far-end metal pad 5-2 for soldering the semiconductor device 6. The near-end metal pad 5-1 is tightly connected to the coaxial feed probe 4. The semiconductor device in this embodiment is a PIN diode.

[0045] In this embodiment, the metal pads are rectangular in shape. When there are four pairs of metal pads, the included angle between two adjacent near-end metal pads 5-1 is 90°. A grounding metal via 8 is provided between each far-end metal pad 5-2 and the metal ground plane 7. The upper end of each grounding metal via 8 is connected to the corresponding far-end metal pad 5-2. The lower end of each grounding metal via 8 is connected to the metal ground plane 7.

[0046] In this embodiment, the gap is 0.3mm, and the thickness of the upper dielectric substrate 1-1 and the lower dielectric substrate 1-2 is 3.1mm. The diode is a MACOM MA4AGFCP910. Below the distal metal pad is a metal via, with the upper end of the metal via connected to the distal metal pad and the lower end connected to the metal ground plane. There are a total of 4 ground metal vias 8, and the radius of the ground metal via 8 is 0.5mm.

[0047] The working mechanism of the coaxial-fed patch shielded antenna protection structure in this embodiment will be explained below:

[0048] When the antenna receives a normal operating electromagnetic wave signal, the signal power is relatively low, and the induced voltage on the coaxial feed probe is also low, much lower than the diode's turn-on threshold voltage. The diode is in the off state at this time and can be considered as a parallel capacitor. Since the equivalent capacitance of a diode is generally small, the impact of this equivalent parallel capacitor on the antenna's operating frequency band can be ignored. At this point, the signal received by the antenna can normally enter the antenna's back end.

[0049] When a high-intensity radiation signal is incident on the antenna, the signal power is relatively large, and the induced voltage on the coaxial feed probe 4 is sufficiently large, exceeding the diode's conduction threshold voltage. The diode is in a conducting state at this time and grounded through the far-end metal pad patch 5-2 and the grounding metal via 8, which can be equivalent to a parallel resistor. The antenna input impedance is significantly changed due to the addition of the parallel resistor, resulting in a complete impedance mismatch. The high-intensity incident signal is almost completely reflected. At this point, the coaxial-fed energy selective shielded antenna structure has generated electromagnetic protection effectiveness, which can effectively suppress damage to the electronic information equipment at the antenna's back end from high-intensity signals.

[0050] After adding a protective structure to the existing coaxial-fed patch antenna, the coaxial-fed energy selective protection antenna of this embodiment was simulated. Under normal operating conditions, its operating frequency band is 2.32–2.45 GHz. Figure 5 As shown, there is a 20MHz shift relative to the original antenna's operating frequency band. However, the original coaxial-fed patch antenna's center operating frequency of 2.41GHz is still within the protective antenna's operating frequency band, so the slight frequency shift can be ignored.

[0051] Using the original coaxial-fed patch antenna with a center operating frequency of 2.41 GHz, we can examine the radiation pattern characteristics of the coaxial-fed energy-selective shielded antenna in this embodiment. directional pattern as follows Figure 6 As shown, the maximum gain at the center of the main lobe is 7.34 dB, which is 0.16 dB lower than the gain of the original coaxial-fed patch antenna. Therefore, the impact of the coaxial-fed energy selective protection antenna structure in this embodiment on the performance of the original coaxial-fed patch antenna is almost negligible. It is evident that adding the protection structure has a very small impact on the performance of the original coaxial-fed patch antenna.

[0052] like Figure 7 As shown, it displays the detailed dimensional parameters of a coaxial-fed energy selective shielded antenna. Figure 7 (a) shows the dimensional parameters of the plane containing the metal radiating patch 9, where l g The length is 60mm, which is the side length of dielectric substrate 1; p The side length is 35.5mm, which is the side length of the square metal radiating patch 9; c R1 is 3.8 mm, which is the right-angle side length of the cut corner of the metal radiating patch 9; R1 is 0.6 mm, which is the radius of the coaxial feed probe 4. Figure 7 (b) shows the dimensional parameters of the plane on which the antenna metal ground plane 7 is located, where R2 is 1.4 mm, which is the outer radius of the air medium surrounding the coaxial feed probe 4; and R3 is 0.5 mm, which is the radius of the grounding metal via 8. Figure 7 (c) shows a top view of the protective structure area of ​​the middle layer of a coaxial-fed energy selective shielded antenna, where the slot l gap The gap width of 0.3mm is the distance between the two metal pad mounts, namely the near-end metal pad mount 5-1 and the corresponding far-end metal pad mount 5-2, used for soldering diodes; m The value is 1.2mm, which is the side length of the 5-2 patch on the far-end metal pad; n The value is 1.2mm, which is the side length of the proximal metal pad patch 5-1 on the side closest to the metal coaxial probe. Figure 7(d) shows the axonometric view of the coaxial-fed power selective shielded antenna, where h1 is 6.2 mm, which is the total thickness of dielectric substrate 1; h2 is 3.1 mm, which is the thickness of the upper and lower dielectric substrates. The metal thickness in the design is 0.035 mm.

[0053] like Figure 8 As shown, this diagram compares the S(1,1) curves of a coaxial-fed energy selective shielded antenna in normal operation and shielded operation. When low-intensity radiation signals are incident on the antenna, the antenna maintains normal operation. With an S(1,1) parameter of -10dB as the boundary, its normal operating frequency band is 2.32-2.45GHz, with a bandwidth of 130MHz. When high-intensity radiation signals are incident on the antenna, the diodes in the shielded structure become conductive, equivalent to resistors. The feed line is connected to the ground plane via metal pads and metal vias. At this time, the S(1,1) parameter is close to 0dB within the normal operating frequency band, and the high-intensity incident signal is almost completely reflected, preventing it from entering the back-end electronic information system and effectively ensuring the electromagnetic safety of the system.

[0054] like Figure 9 As shown, at the original antenna's center operating frequency of 2.41 GHz, the radiation patterns of the shielded antenna under two operating states are compared. Under normal operating conditions, the center gain reaches a maximum of 7.3 dB. However, under shielded conditions, the center gain is reduced to -14.4 dB. This demonstrates that at this operating frequency, the coaxial-fed patch shielded antenna achieves a shielding effectiveness of 21.7 dB, exhibiting excellent strong electromagnetic protection capabilities.

[0055] like Figure 10 As shown, the center direction of the shielding antenna is illustrated in two operating states. A comparison of gain-frequency curves for (θ=0). Within the normal operating frequency band of 2.32-2.45GHz, the shielded antenna exhibits a protection efficiency greater than 20dB, indicating stable and strong electromagnetic protection capabilities across the entire operating frequency band. At the 2.41GHz operating frequency, the protection efficiency reaches 21.7dB.

[0056] like Figure 11 The diagram shows the equivalent circuit diagram of the protective antenna under low-intensity and high-intensity radiation. C0 is the series capacitor, L0 is the series inductor, C1 is the parallel capacitor, L1 is the parallel inductor, and R1 is the parallel resistor. When low-intensity electromagnetic waves are incident on the antenna, the diode is in the off state, and it is equivalent to capacitor C. e When high-intensity electromagnetic waves are incident on the antenna, the diode is in a conducting state and is equivalent to a resistor R. e .

[0057] This embodiment divides the dielectric substrate of an existing coaxial-fed patch antenna into two layers: an upper dielectric substrate and a lower dielectric substrate. Metal pad patches (including near-end and corresponding far-end metal pad patches) are then laid on the upper surface of the lower dielectric substrate, with gaps between the near-end and far-end metal pad patches for soldering semiconductor devices. A corresponding cutout (i.e., a dielectric cutout area) in the upper dielectric substrate ensures sufficient height space to protect the semiconductor devices. This achieves the same effect as the original coaxial-fed patch antenna in terms of size and frequency band. While minimizing the impact on performance parameters such as gain, an electromagnetic protection structure is added to ensure electromagnetic protection of the electronic information system under high radiation conditions, while also guaranteeing its normal operation. This enhances the antenna's own strong electromagnetic protection capability and effectively curbs the threat of high-intensity irradiated electromagnetic waves. The coaxial-fed energy selective protection antenna of this embodiment effectively protects semiconductor devices, preventing them from being exposed in free space and ensuring the stability of the antenna protection structure. The protection efficiency of the coaxial-fed energy selective protection antenna of this embodiment can reach 21.7dB, realizing the integrated design of the electromagnetic protection structure and the coaxial-fed antenna, reducing the cross-sectional volume of the antenna system.

[0058] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as the combination of these technical features does not contradict each other, it should be considered within the scope of this specification. The above embodiments only illustrate several implementation methods of this application, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the invention patent. It should be noted that for those skilled in the art, several modifications and improvements can be made without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A coaxial-fed energy selective shielded antenna, comprising a coaxial feed probe (4), characterized in that, The coaxial-fed energy selective shielded antenna includes an upper dielectric substrate (1-1) and a lower dielectric substrate (1-2); The coaxial feed probe (4) passes through the upper dielectric substrate (1-1) and the lower dielectric substrate (1-2); At least one pair of metal pads are disposed on the lower dielectric substrate (1-2); each pair of metal pads includes a proximal metal pad (5-1) close to the coaxial feed probe and a distal metal pad (5-2) far from the coaxial feed probe; the proximal metal pad (5-1) is tightly connected to the coaxial feed probe (4); a gap is left between the proximal metal pad (5-1) and the corresponding distal metal pad (5-2) for soldering semiconductor devices (6); The upper dielectric substrate (1-1) has a dielectric cutout area (3) for protecting the semiconductor device (6).

2. The coaxial-fed energy selective protection antenna according to claim 1, characterized in that, The hollowed-out area (3) of the medium is a cubic area.

3. The coaxial-fed energy selective protection antenna according to claim 2, characterized in that, The number of the medium cutout areas (3) is 1; The dielectric cutout area (3) corresponds to the position of the semiconductor device (6).

4. The coaxial-fed energy selective protection antenna according to claim 2, characterized in that, The medium has multiple hollowed-out areas (3); Each dielectric cutout area (3) corresponds one-to-one with the position of the corresponding semiconductor device (6).

5. The coaxial-fed energy selective protection antenna according to any one of claims 1 to 4, characterized in that, The shape of the metal pad patch is rectangular.

6. The coaxial-fed energy selective protection antenna according to claim 5, characterized in that, The number of pairs of metal pads is 4.

7. The coaxial-fed energy selective protection antenna according to claim 6, characterized in that, In the four near-end metal pad patches (5-1), the included angle between two adjacent near-end metal pad patches (5-1) is 90°.

8. The coaxial-fed energy selective protection antenna according to claim 7, characterized in that, A grounding metal via (8) is provided between each remote metal pad patch (5-2) and the metal ground plane (7); The upper end of each grounding metal via (8) is connected to the corresponding far-end metal pad patch (5-2); the lower end of each grounding metal via (8) is connected to the metal grounding plate (7).

9. The coaxial-fed energy selective protection antenna according to claim 8, characterized in that, The upper dielectric substrate (1-1) and the lower dielectric substrate (1-2) are tightly connected through a multilayer board lamination process.

10. The coaxial-fed energy selective protection antenna according to claim 9, characterized in that, The upper dielectric substrate (1-1) and the lower dielectric substrate (1-2) have the same thickness.

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