Three-electrode structure of micro-nano electric field sensor and optimization method

Abstract

The invention discloses a three-electrode structure of a micro-nano electric field sensor and an optimization method, and the three electrodes comprise a collector, an extraction electrode and a cathode, and the three electrodes are connected through a film layer. The invention also discloses a three-electrode structure optimization method of the micro-nano electric field sensor, experiments are carried out by adjusting the concave cavity, the lead-out hole or the air hole, and the structures of the three electrodes are optimized, so that the service life of the sensor is prolonged, the current intensity of the collector is increased, the working voltage requirement is reduced, and the measurement repeatability is effectively improved; and the sensing precision is improved, so that the accurate measurement of a weak electric field is realized, the measurement range of the sensor is expanded, and the comprehensive detection of electric fields with different sizes is realized.

Description

Technical Field

[0001] The present invention relates to the field of micro-nano electronic technology, and in particular to a three-electrode structure of a micro-nano electric field sensor and an optimization method thereof. Background Art

[0002] Traditional ionization electric field sensors are usually designed with carbon nanotubes as cathodes, taking advantage of their good conductivity and high surface area for electric field detection. However, the carbon nanotube structure requires a higher operating voltage, which increases the energy consumption of the device; it exhibits instability in repeated measurements, resulting in poor repeatability of the measurement results. In long-term use, the carbon nanotube cathode also faces the problem of structural fragility. Especially in an environment where charged particles are repeatedly bombarded, the mechanical strength of the carbon nanotubes will gradually decrease, resulting in degradation of sensor performance and shortened service life.

[0003] In order to solve these problems, the present invention proposes a micro-nano electric field sensor using a silicon micron column cathode structure, which can effectively disperse the direct impact of charged particles on the cathode material, thereby protecting the cathode nanostructure from damage by high-speed particles; at the same time, a structural optimization method is designed, which can also adjust various data such as the arrangement of holes and slots and sizes on the three electrodes according to experimental data, which not only prolongs the service life of the sensor, but also optimizes the electric field distribution through a reasonable electrode layout, increases the current intensity of the collector, and thus improves the sensitivity of the sensor. Compared with traditional designs, this structure is more stable, reduces the operating voltage requirement, effectively improves measurement repeatability, and improves sensing accuracy. Summary of the invention

[0004] In view of the above problems existing in the prior art, the present invention is proposed.

[0005] Therefore, the problem to be solved by the present invention is how to optimize the electrode structure, extend the service life of the sensor, increase the current intensity of the collector, reduce the working voltage requirement, improve the measurement repeatability, and improve the sensing accuracy.

[0006] In order to solve the above technical problems, the present invention provides the following technical solutions: a three-electrode structure of a micro-nano electric field sensor, which includes three electrodes and a membrane layer.

[0007] As a preferred solution of the three-electrode structure of the micro-nano electric field sensor described in the present invention, the three electrodes include a collecting electrode, an extracting electrode and a cathode, the two sides of the collecting electrode and the two sides of the extracting electrode are connected by a membrane layer, and the two sides of the extracting electrode and the two sides of the cathode are connected by a membrane layer.

[0008] As a preferred solution of the three-electrode structure of the micro-nano electric field sensor of the present invention, a cavity is provided on the collecting electrode, and the cavity is directly opposite to the lead-out electrode.

[0009] As a preferred solution of the three-electrode structure of the micro-nano electric field sensor of the present invention, wherein: the lead-out electrode is provided with a lead-out hole, and the lead-out hole passes through the surface of the lead-out electrode facing the collecting electrode and the surface facing the cathode.

[0010] As a preferred solution of the three-electrode structure of the micro-nano electric field sensor of the present invention, wherein: the cathode is provided with an air hole, and the air hole penetrates the cathode from the surface of the cathode facing the lead-out electrode.

[0011] As a preferred solution of the three-electrode structure of the micro-nano electric field sensor of the present invention, wherein: the cathode is provided with silicon micro-columns, and the silicon micro-columns are evenly arranged on the surface of the cathode facing the lead-out electrode and staggered with the air holes.

[0012] In order to solve the above technical problems, the present invention also provides the following technical solutions: a method for optimizing the three-electrode structure of a micro-nano electric field sensor, which includes adjusting the cavity, lead-out hole or air vent, and obtaining first data through experiments; based on the first data, the data of the cavity, lead-out hole or air vent when the current obtained by the collecting electrode is the largest.

[0013] As a preferred solution of the method for optimizing the three-electrode structure of the micro-nano electric field sensor of the present invention, the adjustment of the cavity includes keeping the lead-out electrode and the cathode unchanged and designing cavity structures with different morphologies.

[0014] As a preferred solution of the method for optimizing the three-electrode structure of the micro-nano electric field sensor of the present invention, the adjustment of the lead-out hole includes keeping the collector and the cathode unchanged and designing lead-out hole structures with different morphologies.

[0015] As a preferred solution of the method for optimizing the three-electrode structure of the micro-nano electric field sensor of the present invention, the adjusting of the air holes includes keeping the collecting electrode and the lead-out electrode unchanged and designing air hole structures with different morphologies.

[0016] As a preferred solution of the method for optimizing the three-electrode structure of the micro-nano electric field sensor described in the present invention, it also includes adjusting the silicon micron column, keeping the collecting electrode, the lead-out electrode and the air pores unchanged, and designing silicon micron column structures with different morphologies.

[0017] The beneficial effects of the present invention are as follows: the present invention provides a three-electrode structure of a micro-nano electric field sensor, which extends the service life of the sensor, increases the current intensity of the collector, reduces the working voltage requirement, effectively improves the measurement repeatability, and improves the sensing accuracy, thereby achieving accurate measurement of weak electric fields, and also expanding the measurement range of the sensor to achieve comprehensive detection of electric fields of different sizes. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:

[0019] Figure 1 This is the overall structural diagram of the three-electrode structure of the micro-nano electric field sensor.

[0020] Figure 2 Schematic diagram of the three-electrode structure of the micro-nano electric field sensor.

[0021] Figure 3 Schematic diagram of electrodes for four different collecting electrodes of micro-nano electric field sensors.

[0022] Figure 4 Schematic diagram of electrodes with three different lead-out electrodes for micro-nano electric field sensors.

[0023] Figure 5 Schematic diagram of electrodes with three different cathodes for micro-nano electric field sensors.

[0024] Figure 6 A step-by-step diagram of the optimization method for the three-electrode structure of a micro-nano electric field sensor. DETAILED DESCRIPTION

[0025] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the accompanying drawings.

[0026] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0027] Secondly, the term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present invention. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor is it a separate or selective embodiment that is mutually exclusive with other embodiments.

[0028] Example 1, reference Figure 1 and Figure 2, which is the first embodiment of the present invention, and this embodiment provides a three-electrode structure of a micro-nano electric field sensor. The three-electrode structure of the micro-nano electric field sensor includes three electrodes 100 and a film layer 200. The three electrodes 100 are etched from three circular single-crystal silicon wafers; each two plates are connected by a film layer 200, and the film layer 200 is a polyester film insulation layer or a material with good insulation performance, high mechanical strength and durability, heat resistance and chemical resistance.

[0029] The three electrodes 100 include a collector 101, an extraction electrode 102, and a cathode 103. The three electrodes 100 are used to realize the sensor sensing electric field. Specifically, the cathode 103 is responsible for emitting electrons or sensing charged particles, the extraction electrode 102 is used to guide the charged particles in the electric field to flow to the collector 101, and the collector 101 is used to finally collect the current signal.

[0030] The two sides of the collecting electrode 101 and the two sides of the extraction electrode 102 are connected by the film layer 200, and the two sides of the extraction electrode 102 and the two sides of the cathode 103 are connected by the film layer 200. The film layer 200 mainly connects the electrodes, fixes the collecting electrode 101 and the extraction electrode 102, and the extraction electrode 102 and the cathode 103 at an appropriate distance, so as to ensure that the electric field is evenly distributed inside the sensor. At the same time, the film layer 200 can provide structural support for the electrode to prevent the electrode from being offset due to vibration or external force during use. Finally, the film layer 200 can also play a certain isolation role to avoid direct contact and short circuit between electrodes, thereby improving the stability and durability of the sensor.

[0031] Example 2, reference Figures 1 to 6 , which is the second embodiment of the present invention, and this embodiment is based on the previous embodiment.

[0032] Specifically, the three electrodes 100 include a collector 101, an extraction electrode 102 and a cathode 103. The two sides of the collector 101 and the two sides of the extraction electrode 102 are connected by a film layer 200, and the two sides of the extraction electrode 102 and the two sides of the cathode 103 are connected by a film layer 200. The three electrodes 100 include a collector 101, an extraction electrode 102 and a cathode 103. The three electrodes 100 are used to realize the sensor sensing electric field. Specifically, the cathode 103 is responsible for emitting electrons or sensing charged particles, the extraction electrode 102 is used to guide the charged particles in the electric field to flow to the collector 101, and the collector 101 is used to finally collect the current signal.

[0033] Specifically, a cavity Q1 is provided on the collector 101, and the cavity Q1 is directly opposite to the lead-out electrode 102. The cavity Q1 is provided at the center of the collector 101, and is a rectangle with a side length of 6 mm×8 mm and a depth of 200 μm. The cavity Q1 changes the structure of the surface of the collector 101, can regulate the distribution of the electric field, and enhance the current collection effect.

[0034] Specifically, the lead-out hole H1 is provided on the lead-out electrode 102, and the lead-out hole H1 penetrates the surface of the lead-out electrode 102 facing the collector 101 and the surface facing the cathode 103. There are 12 lead-out holes H1 in 3 rows and 4 columns, and the diameter is 1.2 mm. The lead-out hole H1 is used to facilitate the charged particles generated by the gas discharge between the cathode 103 and the lead-out electrode 102 to pass through the lead-out electrode 102 smoothly to reach the collector 101, thereby increasing the output current of the sensor and improving the sensitivity.

[0035] Specifically, the cathode 103 is provided with a vent hole H2, which penetrates the cathode 103 from the surface of the cathode 103 facing the lead-out electrode 102. There are 9 vent holes H2 in 3 rows and 3 columns, and the diameter is 1.2 mm. The vent holes H2 help stabilize the electric field and facilitate the diffusion of gas, preventing the temperature of the electrode from being too high, thereby ensuring the stability of the sensor.

[0036] Specifically, silicon micron columns 103a are provided on the cathode 103. The silicon micron columns 103a are evenly arranged on the surface of the cathode 103 facing the lead-out electrode 102 and staggered with the air holes H2. The silicon micron columns 103a are 60 μm high and 10 μm in diameter. Adjacent columns are arranged at an equal interval of 20 μm to form a square array. The height of the silicon micron columns 103a is 6 times the diameter. This is to make full use of the large electric field at the tip of the micron column to enhance the field electron emission of the silicon material.

[0037] When in use, the cavity Q1 changes the structure of the surface of the collector 101, which can regulate the distribution of the electric field and enhance the current collection effect. The extraction hole H1 is used to facilitate the charged particles generated by the gas discharge between the cathode 103 and the extraction electrode 102 to pass smoothly through the extraction electrode 102 to the collector 101, increase the output current of the sensor, and improve the sensitivity. The air hole H2 helps to stabilize the electric field and facilitate the diffusion of the gas, preventing the temperature of the electrode from being too high, thereby ensuring the stability of the sensor. The height of the silicon micron column 103a is 6 times the diameter, in order to make the best use of the large electric field at the tip of the micron column to enhance the field electron emission of the silicon material.

[0038] Example 3, reference Figures 1 to 6 , which is the third embodiment of the present invention, is based on the first embodiment and provides an optimization method for the three-electrode structure of a micro-nano electric field sensor.

[0039] Specifically, the cavity Q1, the lead-out hole H1 or the vent hole H2 are adjusted, and the first data is obtained through experiments. Each time, only one of the cavity Q1, the lead-out hole H1 or the vent hole H2 is adjusted, such as the shape, size, arrangement and depth of the cavity Q1, and the aperture, shape and spacing of the lead-out hole H1 or the vent hole H2, and the output current Ic of the sensor is measured under the data.

[0040] According to the first data, the data of the cavity Q1, the lead-out hole H1 or the vent hole H2 when the current is the largest is obtained by using the collector 101. The data is plotted to find one or more data when the output current Ic is the largest, determine the data range of each cavity Q1, lead-out hole H1 or vent hole H2, and repeat the experiment within the range until the maximum data that can be achieved within the accuracy is found.

[0041] Example 4, reference Figures 1 to 6 , which is the fourth embodiment of the present invention, is based on the third embodiment and provides an optimization method for the three-electrode structure of a micro-nano electric field sensor.

[0042] Specifically, adjusting the cavity Q1 includes keeping the lead-out electrode 102 and the cathode 103 unchanged and designing a cavity Q1 structure with different morphologies.

[0043] Design a: A rectangular cavity with a size of 6 mm×8 mm and a depth of 200 μm is set in the center of the sensor collector 101.

[0044] Design b: No cavity is provided in the sensor collector 101 .

[0045] Design c: A rectangular cavity with a size of 6 mm×8 mm and a depth of 100 μm is set in the center of the sensor collector 101.

[0046] Design d: 12 small cylindrical blind holes with a diameter of 1.2 mm and a depth of 200 μm are arranged in 3 rows and 4 columns in the center of the sensor collector 101.

[0047] According to the current density formula:

[0048] J=j n +j p =(nqμ n +pqμ p )E

[0049] It can be obtained that when the current density is the same in the electric field and the positive ion number density is much greater than the electron density, the size of the positive ion number density mainly depends on the positive ion number density. The larger the positive ion number density, the greater the current density. It can be determined which sensor has a large output current density. The structures of the lead-out electrode 102 and the cathode 103 are kept unchanged and experiments are conducted to obtain the discharge parameters of the optimized collector of the sensor in Table 1. It is concluded that the current received by the collector 101 in design a is the largest, so design a is selected in subsequent designs.

[0050] Table 1: Simulated discharge parameters of four different collector sensors

[0051]

[0052] On the basis of the previous step, a rectangular cavity with a size of 6mm×8mm and a depth of 200μm and the cathode 103 are kept unchanged in the center of the collector 101, and different morphologies of the lead-out hole H1 structures are designed to study the influence of different lead-out hole H1 structures.

[0053] Design e: A hole with a diameter of 6 mm is set in the center of the lead-out pole 102.

[0054] Design f: nine holes with a diameter of 1.2 mm are arranged in three rows and three columns in the center of the lead-out pole 102 .

[0055] Design g: twelve holes with a diameter of 1.2 mm are arranged in 3 rows and 4 columns in the center of the lead-out pole 102 .

[0056] The discharge parameters of the lead-out electrode 102 in Table 2 were obtained through experiments. It was found that the positive ion number density of the discharge parameters in the design g case was the largest, so its current density was the largest, so the design g structure was the optimal structure.

[0057] Table 2: Simulated discharge parameters of three different lead-out level sensors

[0058]

[0059] Specifically, adjusting the air hole H2 includes keeping the collecting electrode 101 and the lead-out electrode 102 unchanged and designing air hole H2 structures with different morphologies.

[0060] On the basis of the previous step, a rectangular cavity with a size of 6mm×8mm and a depth of 200μm in the center of the collecting electrode 101 and 12 holes with a diameter of 1.2mm in 3 rows and 4 columns in the center of the lead-out electrode 102 are kept unchanged, and air pore H2 structures with different morphologies are designed to study the influence of different air pore H2 structures.

[0061] Design h: Two ventilation holes with a diameter of 4 mm are set in the center of the cathode 103.

[0062] Design i: 12 holes with a diameter of 1.2 mm are arranged in 3 rows and 4 columns at the center of the cathode 103 .

[0063] Design j: Nine holes with a diameter of 1.2 mm are arranged in three rows and three columns at the center of the cathode 103 .

[0064] The discharge parameters of the cathode 103 in Table 3 are obtained by experiments. It is found that the positive ion number density is the largest under design j, so its current density is the largest, so design j is the optimal structure. So far, the overall characteristics of the three electrodes of the sensor have been determined. In order to ensure the accuracy of the experimental data, the experiment can be repeated, the experimental sequence can be adjusted, and the design size and arrangement can be changed.

[0065] Table 3: Simulated discharge parameters of three different cathode sensors

[0066]

[0067] Specifically, it also includes adjusting the silicon micron column 103a, keeping the collector 101, the lead-out electrode 102 and the vent hole H2 unchanged, and designing silicon micron column 103a structures with different morphologies. The adjustment of the silicon micron column 103a can also be placed before or after any step in the experiment.

[0068] It can be concluded that a rectangular cavity with a size of 6mm×8mm and a depth of 200μm is set in the center of the sensor collector 101, 12 holes with a diameter of 1.2mm are set in 3 rows and 4 columns in the center of the lead-out electrode 102, and 9 holes with a diameter of 1.2mm are set in 3 rows and 3 columns in the center of the cathode 103. This structure can maximize the collector current of the sensor and improve the sensitivity of the sensor.

[0069] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A three-electrode structure of a micro-nano electric field sensor, characterized in that: include, The three electrodes (100) include a collecting electrode (101), an extraction electrode (102) and a cathode (103), wherein two sides of the collecting electrode (101) and two sides of the extraction electrode (102) are connected via a film layer (200), and two sides of the extraction electrode (102) and two sides of the cathode (103) are connected via a film layer (200).

2. The three-electrode structure of the micro-nano electric field sensor according to claim 1, characterized in that: A concave cavity (Q1) is provided on the collecting electrode (101), and the concave cavity (Q1) is directly opposite to the lead-out electrode (102).

3. The three-electrode structure of the micro-nano electric field sensor according to claim 2, characterized in that: The lead-out electrode (102) is provided with a lead-out hole (H1), and the lead-out hole (H1) penetrates the surface of the lead-out electrode (102) facing the collecting electrode (101) and the surface facing the cathode (103).

4. The three-electrode structure of the micro-nano electric field sensor according to claim 3, characterized in that: The cathode (103) is provided with an air hole (H2), and the air hole (H2) penetrates the cathode (103) from the surface of the cathode (103) facing the lead-out electrode (102).

5. The three-electrode structure of the micro-nano electric field sensor according to claim 4, characterized in that: Silicon micron columns (103a) are provided on the cathode (103), and the silicon micron columns (103a) are evenly arranged on the surface of the cathode (103) facing the lead-out electrode (102) and staggered with the air holes (H2).

6. A method for optimizing the three-electrode structure of a micro-nano electric field sensor, characterized in that: Adjust the cavity (Q1), the outlet hole (H1) or the vent hole (H2), and obtain first data through experiments; According to the first data, data of the cavity (Q1), the lead-out hole (H1) or the air-permeable hole (H2) when the current obtained by the collector (101) is the maximum is used.

7. The method for optimizing the three-electrode structure of the micro-nano electric field sensor according to claim 6, characterized in that: The adjustment of the concave cavity (Q1) includes keeping the lead-out electrode (102) and the cathode (103) unchanged and designing concave cavity (Q1) structures with different morphologies.

8. The method for optimizing the three-electrode structure of the micro-nano electric field sensor according to claim 7, characterized in that: The adjusting of the lead-out hole (H1) comprises keeping the collecting electrode (101) and the cathode (103) unchanged and designing lead-out hole (H1) structures with different morphologies.

9. The method for optimizing the three-electrode structure of the micro-nano electric field sensor according to claim 8, characterized in that: The adjusting of the air holes (H2) includes keeping the collecting electrode (101) and the lead-out electrode (102) unchanged and designing air holes (H2) structures with different morphologies.

10. The method for optimizing the three-electrode structure of the micro-nano electric field sensor according to claim 9, characterized in that: Also includes, The silicon micron column (103a) is adjusted, the collecting electrode (101), the lead-out electrode (102) and the air vent (H2) are kept unchanged, and silicon micron column (103a) structures with different morphologies are designed.

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