Sm-Fe-based permanent magnetic film, preparation method and application thereof

Abstract

The application discloses a Sm-Fe-based permanent magnetic film and a preparation method and application thereof. The Sm-Fe-based permanent magnetic film comprises a Ta buffer layer, a Sm-Fe layer and a Ta cover layer which are sequentially arranged along the thickness direction of a substrate, the Sm-Fe layer has perpendicular magnetic anisotropy, and the Sm-Fe layer comprises pure SmFe x polycrystalline film, x = 1.8-2. The preparation method comprises the following steps: sequentially depositing a Ta buffer layer, a Sm-Fe layer and a Ta cover layer on a substrate by using a magnetron sputtering technology, and performing annealing heat treatment on the obtained composite film to prepare the Sm-Fe-based permanent magnetic film. The Sm-Fe-based permanent magnetic film has excellent magnetic anisotropy in the vertical direction and has higher coercivity. The successful preparation of the good perpendicular anisotropy magnetic film has important application value in the application of micro-electro-mechanical systems, micro-electronic systems, magnetic recording materials and spin electronic devices.

Description

Technical Field

[0001] This invention relates to a permanent magnet thin film, and more particularly to an Sm-Fe based permanent magnet thin film, its preparation method and application, belonging to the field of permanent magnet thin film technology. Background Technology

[0002] Magnetic anisotropy is a key property of magnetic materials, and perpendicular anisotropy plays a crucial role in various applications, such as spintronic devices, microelectromechanical systems (MEMS), magnetic nanosensors, magnetic storage, and magnetic recording. In magnetic thin films, the easy magnetization direction is often preferentially oriented in-plane, making it difficult to obtain thin films with perpendicular magnetic anisotropy, which severely limits the development of high-performance functional devices. Epitaxial growth is an effective method for fabricating thin films with perpendicular anisotropy. However, the perpendicular anisotropy of epitaxially grown thin films is influenced by various factors, such as growth conditions, crystal structure, lattice matching, and film thickness, and considerable challenges remain in its fabrication. Summary of the Invention

[0003] The main objective of this invention is to provide a Sm-Fe based permanent magnet thin film and its preparation method, so as to overcome the shortcomings of the prior art.

[0004] Another object of the present invention is to provide the application of the Sm-Fe based permanent magnet thin film.

[0005] To achieve the aforementioned objectives, the technical solution adopted by this invention includes:

[0006] This invention provides a Sm-Fe-based permanent magnet thin film, comprising a Ta buffer layer, a Sm-Fe layer, and a Ta capping layer sequentially stacked along the thickness direction of the substrate. The Sm-Fe layer exhibits magnetic perpendicular anisotropy and comprises pure SmFe. x Polycrystalline thin films, x = 1.8–2.

[0007] This invention also provides a method for preparing Sm-Fe based permanent magnet thin films, comprising:

[0008] A Ta buffer layer, a Sm-Fe layer, and a Ta capping layer were sequentially deposited on a substrate using magnetron sputtering technology. The resulting composite film was then subjected to annealing heat treatment to obtain a Sm-Fe-based permanent magnet thin film.

[0009] This invention also provides the application of the Sm-Fe based permanent magnet thin film in microelectronic systems, microelectromechanical systems, magnetic recording materials, or spintronic devices.

[0010] Compared with the prior art, the present invention has at least the following beneficial effects:

[0011] The Sm-Fe based permanent magnet thin film provided by this invention exhibits highly perpendicular anisotropy, displaying excellent magnetic anisotropy in the perpendicular direction and significantly higher coercivity, reaching 2427 Oe, exceeding the 650 Oe reported in the literature for films with near-SmFe2 composition. The successful fabrication of this well-perpendicularly anisotropic magnetic thin film has significant application value in microelectromechanical systems (MEMS), microelectronic systems, magnetic recording materials, and spintronic devices. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 This is a schematic diagram of the structure of a Sm-Fe based permanent magnet thin film provided in a typical embodiment of the present invention;

[0014] Figure 2a The XRD pattern of the Sm-Fe based permanent magnet thin film prepared by depositing a SmFex (x = 1.5-9) layer at 300℃, followed by depositing a 50nm Ta capping layer, and annealing at 700℃ for 0.5h is shown in a typical embodiment of the present invention.

[0015] Figure 2b The XRD pattern of the Sm-Fe based permanent magnet thin film prepared by depositing a SmFe2 layer at different temperatures (250℃ to 700℃), depositing a 50nm Ta capping layer, and annealing at 700℃ for 0.5h is shown in a typical embodiment of the present invention.

[0016] Figure 2c The XRD patterns of Sm-Fe based permanent magnet thin films prepared by depositing a SmFe2 layer at 300°C followed by depositing a 50-100 nm Ta capping layer and annealing at 700°C for different times (15 minutes to 1 hour) in a typical embodiment of the present invention are shown.

[0017] Figure 2d In a typical embodiment of the present invention, SmFe was deposited at 500°C. 1.9 XRD pattern of Sm-Fe based permanent magnet thin film prepared by depositing a 50 nm Ta capping layer and annealing at 700 °C for 1 h;

[0018] Figure 3 SmFe prepared for Comparative Example 1 0.5 SmFe permanent magnet thin film 0.5Hysteresis loop diagrams of unannealed Ta(AA) thin film samples at 500℃ along the parallel ( / / ) and perpendicular (⊥) directions;

[0019] Figure 4 Hysteresis loops along the parallel ( / / ) and perpendicular (⊥) directions of the SmFe-based permanent magnet thin film SmFe(500℃) / Ta(AA) prepared for Comparative Example 2 after annealing at 700℃.

[0020] Figure 5 SmFe prepared in Example 1 of this invention 1.9 SmFe permanent magnet thin film 1.9 Hysteresis loop diagrams of (500℃) / Ta(AA) thin films annealed at 700℃ along the parallel ( / / ) and perpendicular (⊥) directions;

[0021] Figure 6 SmFe prepared in Example 2 of this invention 1.9 Magnetostriction coefficient of Ta(BA) thin film after annealing at 700℃ for different times (300℃ / 550℃).

[0022] Figure description: 1-Si(100) substrate, 2-Ta buffer layer, 3-Sm-Fe layer, 4-Ta capping layer. Detailed Implementation

[0023] To address the problem that in magnetic thin films, the easy magnetization direction is often preferentially oriented in the plane, making it difficult to obtain thin films with perpendicular magnetic anisotropy, which severely limits the development of high-performance functional devices, the inventors of this invention, through long-term research and extensive practice, have proposed the technical solution of this invention, providing a Sm-Fe based permanent magnet thin film with perpendicular anisotropy and its preparation method.

[0024] Sm-Fe material is a special alloy material belonging to the Laves phase compound. Sm-Fe material has a high negative magnetostriction coefficient, which means that the material will undergo volume change under the action of a magnetic field. This property mainly comes from the high magnetoelasticity of Sm ions and the large exchange constant of rare earth-iron intermetallic compounds. These properties enable Sm-Fe material to maintain a high magnetostriction coefficient at room temperature, especially along the easy magnetization axis

[111] , where its magnetostriction coefficient can reach -2010 ppm.

[0025] The Sm-Fe-based permanent magnet thin film of the present invention has good magnetostrictive properties. Since the magnetostrictive properties of the Sm-Fe2 phase thin film are limited in the direction parallel to the substrate, but can be magnetostricted in the direction perpendicular to the substrate, it exhibits good magnetic properties. Therefore, the Sm-Fe2 phase thin film exhibits excellent magnetostrictive anisotropy in the direction perpendicular to the substrate.

[0026] The following will provide a further explanation of the technical solution, its implementation process, and its principles.

[0027] Specifically, as one aspect of the technical solution of this invention, a Sm-Fe-based permanent magnet thin film includes a Ta buffer layer, an Sm-Fe layer, and a Ta capping layer sequentially stacked along the thickness direction of the substrate. The Sm-Fe layer exhibits magnetic perpendicular anisotropy and comprises pure SmFe. x Polycrystalline thin film, x = 1.8N2.

[0028] In some embodiments, the Sm-Fe layer preferably comprises pure SmFe. 1.9 Polycrystalline thin films, with their higher magnetostriction coefficients, generate higher stress under a magnetic field perpendicular to the film surface, exhibiting significant magnetic anisotropy. This results in SmFep along the direction perpendicular to the film surface being subjected to higher stress. 1.9 The magnetic properties of the thin film are far superior to those of thin films with other compositions.

[0029] In some embodiments, the thickness of the Sm-Fe layer is 950–1050 nm.

[0030] In some embodiments, the substrate may include at least one of a Si substrate, a Si / SiO2 substrate, an alumina substrate, etc., preferably a Si(100) substrate, but is not limited thereto.

[0031] In some implementations, the thickness of the Ta buffer layer is 50–100 nm.

[0032] In some embodiments, the thickness of the Ta capping layer is 50–100 nm. The Ta capping layer deposited in this invention effectively prevents the volatilization of Sm, and successfully synthesizes pure SmFe at a near 1:2 composition ratio. x Phase thin film.

[0033] In some embodiments, the thickness of the Sm-Fe based permanent magnet film is 1050–1250 nm.

[0034] For details, please refer to Figure 1 As shown, the Sm-Fe based permanent magnet thin film includes, from bottom to top, a Si(100) substrate 1, a Ta buffer layer 2, an Sm-Fe layer 3, and a Ta capping layer 4.

[0035] As another aspect of the technical solution of the present invention, a method for preparing a Sm-Fe based permanent magnet thin film includes: using magnetron sputtering technology to sequentially deposit a Ta buffer layer, a Sm-Fe layer and a Ta capping layer on a substrate, and then subjecting the obtained composite thin film to annealing heat treatment to obtain a Sm-Fe based permanent magnet thin film.

[0036] In some specific embodiments, the preparation method specifically includes: using magnetron sputtering technology, using an inert gas as the sputtering gas and a Ta target as the target material, to sputter and deposit a Ta buffer layer on the substrate surface; wherein the pressure of the inert gas used is 0.8 to 3 Pa, the sputtering power is 50 to 120 W, the sputtering time is 5 to 10 min, and the deposition temperature is 250 to 350 °C.

[0037] In some specific embodiments, the preparation method specifically includes: using magnetron sputtering technology, with an inert gas as the sputtering gas, and Fe and Sm targets as targets, a co-sputtering method is used to sputter and deposit an Sm-Fe layer on the surface of a Ta buffer layer; wherein the pressure of the inert gas used is 0.8-3 Pa, the sputtering power is 10-150 W, the sputtering time is 10-250 min, and the deposition temperature is 250-700 °C, preferably 250-550 °C.

[0038] In some specific embodiments, the preparation method specifically includes: using magnetron sputtering technology, using an inert gas as the sputtering gas and a Ta target as the target material, to sputter and deposit a Ta capping layer on the surface of the Sm-Fe layer; wherein the pressure of the inert gas used is 0.8-3 Pa, the sputtering power is 50-120 W, the sputtering time is 3-60 min, and the deposition temperature is 250-350 °C.

[0039] In some specific embodiments, the preparation method may further include: before depositing a Ta buffer layer on the substrate, using magnetron sputtering technology with an inert gas as the sputtering gas to bombard the substrate surface with ions; wherein the pressure of the inert gas used is 1-5 Pa, the sputtering power is 20-60 W, and the sputtering time is 10-40 min.

[0040] Furthermore, the aforementioned inert gas can be argon, but is not limited to this.

[0041] In magnetic thin films, the easy magnetization direction is often preferentially oriented in-plane, making it difficult to obtain thin films with perpendicular magnetic anisotropy. The method for preparing the Sm-Fe based permanent magnet thin film involves changing the phase formation behavior of the Sm-Fex thin film with Fe composition ratio x and determining the main SmFe... x By exploring the phase composition range, Sm-Fe films were prepared at different deposition temperatures. The optimal deposition temperature was found, resulting in Sm-Fe films with excellent magnetic anisotropy. x Mutually.

[0042] In some more specific embodiments, the preparation method specifically includes the following steps:

[0043] (1) Using magnetron sputtering technology, argon gas is used as the sputtering gas to bombard the substrate surface with ions to obtain the substrate; in step (1), the pressure of the argon gas is 1-5 Pa, the RF sputtering power is 20-60 W, and the sputtering time is 10-40 min.

[0044] (2) Using magnetron sputtering technology, argon gas is used as the sputtering gas and a Ta target is used as the target material to sputter and deposit a Ta buffer layer on the substrate surface; in step (2), the pressure of the argon gas is 0.8 to 3 Pa, the sputtering power is 50 to 120 W, and the sputtering time is 5 to 10 min.

[0045] (3) Magnetron sputtering technology is used, with argon gas as the sputtering gas and Fe and Sm targets as targets; a co-sputtering method is used to deposit a Sm-Fe thin film (i.e. the aforementioned “Sm-Fe layer”) on the Ta buffer layer; in step (3), the pressure of the argon gas is 0.8 to 3 Pa, the sputtering power is 10 to 150 W, and the sputtering time is 10 to 250 min;

[0046] (4) Using magnetron sputtering technology, argon gas is used as the sputtering gas and a Ta target is used as the target material to deposit a Ta capping layer on the surface of the Sm-Fe layer; in step (4), the pressure of the argon gas is 0.8 to 3 Pa, the sputtering power is 50 to 120 W, and the sputtering time is 3 to 60 min.

[0047] (5) The Sm-Fe based permanent magnet film obtained in step (4) is subjected to annealing heat treatment.

[0048] Further, in step (3), the deposition temperature of the Sm-Fe thin film is 250 to 700°C, preferably 250 to 550°C.

[0049] In some specific implementations, the annealing heat treatment temperature is 700°C.

[0050] In some specific implementations, the annealing heat treatment time is 30 to 60 minutes, preferably 45 to 60 minutes.

[0051] Furthermore, the annealing time of the Sm-Fe based permanent magnet thin film at 700°C is 15–60 min, preferably 45–60 min.

[0052] Specifically, when Sm-Fe based permanent magnet thin films contain Sm-Fe x When x = 1.9, SmFe2+ annealed at 700℃ for 1 h 1.9A (500℃) / Ta(BA) thin film sample was obtained, forming a pure-phase SmFe2 polycrystalline thin film. The deposited Ta capping layer effectively prevented Sm volatilization. By adjusting the deposition temperature and annealing heat treatment time at an appropriate composition ratio close to that of the SmFe2 phase, a single-phase SmFe2 thin film was successfully prepared. x Polycrystalline thin films. Higher deposition and annealing temperatures can improve SmFe0... x The purity of the phase is improved, and its magnetostriction coefficient is increased, so that Sm-Fe based permanent magnet thin films exhibit excellent magnetic anisotropy.

[0053] In summary, the Sm-Fe based permanent magnet thin film prepared by the method of the present invention is a highly vertical anisotropic thin film, exhibiting significantly higher coercivity in the vertical direction, reaching 2427 Oe, which exceeds the 650 Oe of thin films with near-SmFe2 composition reported in the literature.

[0054] Furthermore, another aspect of the present invention provides the application of the aforementioned Sm-Fe-based permanent magnet thin film. Specifically, the Sm-Fe-based permanent magnet thin film prepared by the present invention has excellent vertical anisotropy. The magnetic properties of such thin films in the vertical direction, such as permeability and magnetization, are generally better than those in the parallel direction. This makes them perform well in applications that require vertical magnetic response and has important application value in microelectromechanical systems, microelectronic systems, magnetic recording materials, and spintronic devices.

[0055] To further illustrate the Sm-Fe-based permanent magnet thin film prepared according to the present invention, the present invention will be further described below with reference to the accompanying drawings and specific embodiments, but this does not imply any limitation on the scope of protection of the present invention. It should be noted that the following embodiments are intended to facilitate understanding of the present invention and are not intended to limit it in any way. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention. Experimental methods in the following embodiments that do not specify specific conditions are generally performed under conventional conditions or according to the conditions recommended by the manufacturer.

[0056] Comparative Example 1

[0057] The substrate used for preparing the Sm-Fe based permanent magnet thin film in this comparative example is Si(100), with a Ta buffer layer of 50-100 nm thickness deposited on its surface. Above the Ta buffer layer is a 950-1050 nm thick Sm-Fe layer, and above the Sm-Fe layer is a 50-100 nm thick Ta capping layer. The SmFe film in this comparative example was prepared... 0.5 The specific steps for permanent magnet thin films are as follows:

[0058] (1) Clean the Si(100) substrate and then send it into the sample injection chamber; use radio frequency magnetron sputtering to bombard the Si(100) substrate with ions to obtain the bombarded Si(100) substrate and send it into the high vacuum sample preparation chamber.

[0059] (2) Using Ta as the target material, a Ta buffer layer with a thickness of 50-100 nm is deposited on a Si(100) substrate.

[0060] (3) Using Fe and Sm targets as targets, a Sm-Fe layer with a thickness of 950-1050 nm is deposited on the Ta buffer layer obtained in step (2) using a co-sputtering method. 0.5 layer.

[0061] (4) Using Ta as the target material, the Sm-Fe obtained in step (3) 0.5 A Ta capping layer with a thickness of 50-100 nm is deposited on the layer.

[0062] (5) Take the Sm-Fe obtained in step (4) 0.5 The permanent magnet thin film was annealed at 700℃ for 60 minutes.

[0063] SmFe in this comparative example was prepared using a dual-chamber magnetron sputtering system. 0.5 The specific conditions for permanent magnet thin films are as follows:

[0064] The Si(100) substrate to be coated was ultrasonically cleaned with analytical grade acetone for 15 min per cycle, for a total of 3 ultrasonic cleanings. After cleaning, the Si(100) substrate was dried with nitrogen gas and then sent into the sample injection chamber, where a vacuum of better than 4 x 10⁻⁶ was applied. -5 Pa. Next, the Si(100) substrate is subjected to ion bombardment to remove any remaining impurities and oxide layers on the substrate surface, with a background vacuum better than 4 x 10⁻⁶. -5 Pa, sputtering gas was argon with a purity of 99.9995% at a flow rate of 32 sccm, using an RF sputtering power supply with a sputtering power of 40W, sputtering for 20 minutes at room temperature.

[0065] A Si(100) substrate was placed in a high vacuum chamber for the preparation of a thin film on the substrate surface. The background vacuum was better than 6.0 × 10⁻⁶. -6Pre-sputtering is performed on the target material to be sputtered at Pa to remove any impurities or oxide layers that may exist on the target surface, so that the film to be deposited later is free of impurities. Pre-sputtering does not require specific sputtering power or time. Then, the Si(100) substrate is heated to 300°C, and argon gas with a purity of 99.9995% is used as the sputtering gas. Under the conditions of sputtering gas pressure of 0.8 Pa and gas flow rate of 32 sccm, a Ta buffer layer with a thickness of 50-100 nm is prepared using a 99.99% Ta target. The sputtering power of the Ta target is 120 W, the sputtering rate is 11 nm / min, and the deposition time is approximately 5 min.

[0066] The substrate with the deposited Ta buffer layer was heated to 500℃, and a 950-1050 nm thick Sm-Fe layer was deposited by sputtering using Fe and Sm targets. The sputtering power of the Fe target was 16 W and the sputtering rate was 0.7 nm / min, while the sputtering power of the Sm target was 100 W and the sputtering rate was 3.9 nm / min. The co-deposition process took approximately 3.6 h. Here, the co-sputtering resulted in an Sm:Fe ratio of 1:0.5.

[0067] The substrate temperature was lowered to 300℃, and a Ta capping layer with a thickness of 50-100nm was prepared using a Ta target with a sputtering purity of 99.99%. The sputtering power of the Ta target was 120W, the sputtering rate was 11nm / min, and the deposition time was approximately 5min.

[0068] Under vacuum conditions, the Sm-Fe based permanent magnet thin film samples prepared in this comparative example were subjected to annealing heat treatment. The permanent magnet thin film samples were annealed at 700℃ for 60 min. The hysteresis loops of the SmFe0.5 (500℃) / Ta (AA) thin film along the parallel ( / / ) and perpendicular (⊥) directions were measured using a vibrating magnetometer. Figure 3 ).Depend on Figure 3 It can be seen that the SmFe0.5 (500℃) / Ta(BA) thin film after annealing did not exhibit obvious magnetic anisotropy along the parallel and perpendicular directions of the sample. The reason for the lack of obvious magnetic anisotropy here may be that the SmFe ratio of 1:0.5 is not the optimal phase formation ratio, resulting in less SmFe phase formation or poor phase texture.

[0069] Comparative Example 2

[0070] The substrate used for preparing the Sm-Fe based permanent magnet thin film in this comparative example is Si(100), with a Ta buffer layer of 50-100 nm thickness deposited on its surface. Above the Ta buffer layer is a 950-1050 nm thick Sm-Fe layer, and above the Sm-Fe layer is a 50-100 nm thick Ta capping layer. The specific steps for preparing the SmFe permanent magnet thin film in this comparative example are as follows:

[0071] (1) Clean the Si(100) substrate and then send it into the sample injection chamber; use radio frequency magnetron sputtering to bombard the Si(100) substrate with ions to obtain the bombarded Si(100) substrate and send it into the high vacuum sample preparation chamber.

[0072] (2) Using Ta as the target material, a Ta buffer layer with a thickness of 50-100 nm is deposited on a Si(100) substrate.

[0073] (3) Using Fe and Sm targets as targets, a Sm-Fe layer with a thickness of 950-1050 nm is deposited on the Ta buffer layer obtained in step (2) by co-sputtering.

[0074] (4) Using Ta as the target material, deposit a Ta capping layer with a thickness of 50-100 nm on the Sm-Fe layer obtained in step (3).

[0075] (5) The SmFe permanent magnet thin film obtained in step (4) is annealed at 700℃ for 60 min.

[0076] The specific conditions for preparing the SmFe permanent magnet thin film of this comparative example using a dual-chamber magnetron sputtering system are as follows:

[0077] The Si(100) substrate to be coated was ultrasonically cleaned with analytical grade acetone for 15 min per cycle, for a total of 3 ultrasonic cleanings. After cleaning, the Si(100) substrate was dried with nitrogen gas and then sent into the sample injection chamber, where a vacuum of better than 4 x 10⁻⁶ was applied. -5 Pa. Next, the Si(100) substrate is subjected to ion bombardment to remove any remaining impurities and oxide layers on the substrate surface, with a background vacuum better than 4 x 10⁻⁶. -5 Pa, sputtering gas was argon with a purity of 99.9995% at a flow rate of 32 sccm, using an RF sputtering power supply with a sputtering power of 40W, sputtering for 20 minutes at room temperature.

[0078] A Si(100) substrate was placed in a high vacuum chamber for the preparation of a thin film on the substrate surface. The background vacuum was better than 6.0 × 10⁻⁶. -6 Pre-sputtering is performed on the target material to be sputtered at Pa to remove any impurities or oxide layers that may exist on the target surface, so that the film to be deposited later is free of impurities. Pre-sputtering does not require specific sputtering power or time. Then, the Si(100) substrate is heated to 300°C, and argon gas with a purity of 99.9995% is used as the sputtering gas at a sputtering pressure of 0.8 Pa and a gas flow rate of 32 sccm. A 50 nm thick Ta buffer layer is prepared using a 99.99% Ta target as the target material. The sputtering power of the Ta target is 120 W, the sputtering rate is 11 nm / min, and the deposition time is approximately 5 min.

[0079] The substrate with the deposited Ta buffer layer was heated to 500℃, and a 950-1050 nm thick Sm-Fe layer was deposited by sputtering using Fe and Sm targets. The sputtering power of the Fe target was 31 W and the sputtering rate was 1.4 nm / min, while the sputtering power of the Sm target was 100 W and the sputtering rate was 3.9 nm / min. The co-deposition process took approximately 3.1 h. Here, co-sputtering resulted in an Sm:Fe ratio of 1:1.

[0080] The substrate temperature was lowered to 300℃, and a 50nm thick Ta capping layer was prepared using a Ta target with a sputtering purity of 99.99%. The sputtering power of the Ta target was 120W, the sputtering rate was 11nm / min, and the deposition time was approximately 5min.

[0081] Under vacuum conditions, the Sm-Fe based permanent magnet thin film sample prepared in this comparative example was annealed at 700℃ for 60 min. The hysteresis loops of the SmFe (500℃) / Ta (AA) thin film along the parallel ( / / ) and perpendicular (⊥) directions were measured using a vibrating magnetometer. Figure 4 ).Depend on Figure 4 It can be seen that, during annealing at 700℃, the SmFe(500℃) / Ta(BA) film did not exhibit significant magnetic anisotropy along the parallel and perpendicular directions of the sample. The reason for the lack of significant magnetic anisotropy here may be that the SmFe ratio is 1:1, which is not the optimal phase formation ratio, resulting in less SmFe phase formation or poor phase texture.

[0082] Example 1

[0083] In this embodiment, the substrate used for preparing the Sm-Fe-based permanent magnet thin film is Si(100), with a 50 nm thick Ta buffer layer deposited on its surface. Above the Ta buffer layer is a 1000 nm thick Sm-Fe layer, and above the Sm-Fe layer is a 50 nm thick Ta capping layer. The SmFe film prepared in this embodiment... 1.9 The specific steps for permanent magnet thin films are as follows:

[0084] (1) Clean the Si(100) substrate and then send it into the sample injection chamber; use radio frequency magnetron sputtering to bombard the Si(100) substrate with ions to obtain the bombarded Si(100) substrate and send it into the high vacuum sample preparation chamber.

[0085] (2) Using Ta as the target material, a 50 nm thick Ta buffer layer is deposited on a Si(100) substrate.

[0086] (3) Using Fe and Sm targets as targets, a 1000 nm thick Sm-Fe layer is deposited on the Ta buffer layer obtained in step (2) using a co-sputtering method.

[0087] (4) Using Ta as the target material, a 50 nm thick Ta capping layer is deposited on the SmFe1.9 layer obtained in step (3).

[0088] (5) The Sm-Fe based permanent magnet film obtained in step (4) is annealed at 700℃ for 60 min.

[0089] SmFe in this embodiment was prepared using a dual-chamber magnetron sputtering system. 1.9 The specific conditions for permanent magnet thin films are as follows:

[0090] The Si(100) substrate to be coated was ultrasonically cleaned with analytical grade acetone for 15 min per cycle, for a total of 3 ultrasonic cleanings. After cleaning, the Si(100) substrate was dried with nitrogen gas and then sent into the sample injection chamber, where a vacuum of better than 4 x 10⁻⁶ was applied. -5 Pa. Next, the Si(100) substrate is subjected to ion bombardment to remove any remaining impurities and oxide layers on the substrate surface, with a background vacuum better than 4 x 10⁻⁶. -5 Pa, sputtering gas was argon with a purity of 99.9995% at a flow rate of 32 sccm, using an RF sputtering power supply with a sputtering power of 40W, sputtering for 20 minutes at room temperature.

[0091] A Si(100) substrate was placed in a high vacuum chamber for the preparation of a thin film on the substrate surface. The background vacuum was better than 6.0 × 10⁻⁶. -6 Pre-sputtering is performed on the target material to be sputtered at Pa to remove any impurities or oxide layers that may exist on the target surface, so that the film to be deposited later is free of impurities. Pre-sputtering does not require specific sputtering power or time. Then, the Si(100) substrate is heated to 300°C, and argon gas with a purity of 99.9995% is used as the sputtering gas at a sputtering pressure of 0.8 Pa and a gas flow rate of 32 sccm. A 50 nm thick Ta buffer layer is prepared using a 99.99% Ta target as the target material. The sputtering power of the Ta target is 120 W, the sputtering rate is 11 nm / min, and the deposition time is approximately 5 min.

[0092] The substrate with the deposited Ta buffer layer was heated to 500℃, and a 950-1050 nm thick Sm-Fe layer was deposited by sputtering using Fe and Sm targets. The sputtering power of the Fe target was 61 W and the sputtering rate was 6.3 nm / min, while the sputtering power of the Sm target was 100 W and the sputtering rate was 3.9 nm / min. The co-sputtering process took approximately 98 minutes. This co-sputtering resulted in an Sm:Fe ratio of 1:1.9.

[0093] The substrate temperature was lowered to 300℃, and a Ta capping layer with a thickness of 50-100nm was prepared using a Ta target with a sputtering purity of 99.99%. The sputtering power of the Ta target was 120W, the sputtering rate was 11nm / min, and the deposition time was approximately 5min.

[0094] Under vacuum conditions, the SmFe prepared in this embodiment was subjected to... 1.9 The permanent magnet thin film sample was annealed at 700℃ for 60 min, and the SmFe was measured using a vibrating magnetometer. 1.9 (500℃) / Ta(BA) thin film hysteresis loops along the parallel ( / / ) and perpendicular (⊥) directions (e.g. Figure 5 ).Depend on Figure 5 It can be seen that the SmFe1.9(500℃) / Ta(AA) thin film annealed at 700℃ for 60 min exhibits significant differences in magnetic anisotropy along the parallel and perpendicular directions of the sample. Moreover, the saturation magnetization in the direction perpendicular to the substrate is significantly higher than that in the parallel direction.

[0095] Furthermore, based on Example 1, the inventors of this case have further improved the deposition of SmFe x A series of experiments were conducted on the process of the layer, specifically: a Sm-Fe based permanent magnet thin film was prepared by depositing a Sm-Fe (x = 1.5-9) layer at 300℃, followed by a 50-100 nm Ta capping layer, and then annealing at 700℃ for 0.5 h. The XRD pattern of the Sm-Fe based permanent magnet thin film is shown below. Figure 2a As shown.

[0096] Furthermore, the inventors of this case also provided a method for depositing a 50-100 nm Ta capping layer after depositing a SmFe2 layer at a series of different temperatures (250℃ to 700℃) and annealing it at 700℃ for 0.5 h to obtain an Sm-Fe-based permanent magnet thin film. The XRD pattern of this Sm-Fe-based permanent magnet thin film is shown below. Figure 2b As shown.

[0097] Furthermore, the inventors of this case also provided a method for preparing Sm-Fe-based permanent magnet thin films by depositing a SmFe2 layer at 300°C followed by a 50-100 nm Ta capping layer and annealing at 700°C for different times (15 minutes to 1 hour). The XRD pattern of this Sm-Fe-based permanent magnet thin film is shown below. Figure 2c As shown.

[0098] Furthermore, the inventors in this case also provided a method for depositing SmFe at 500℃. 1.9 An example of preparing a Sm-Fe based permanent magnet thin film by depositing a 50-100 nm Ta capping layer and annealing at 700 °C for 30 min-1 h is shown below. Figure 2d As shown.

[0099] Example 2

[0100] In this embodiment, the substrate used for preparing the Sm-Fe-based permanent magnet thin film is Si(100), with a 100 nm thick Ta buffer layer deposited on its surface. Above the Ta buffer layer is a 950 nm thick Sm-Fe layer, and above the Sm-Fe layer is a 100 nm thick Ta capping layer. The SmFe film prepared in this embodiment... 1.9 The specific steps for permanent magnet thin films are as follows:

[0101] (1) Clean the Si(100) substrate and then send it into the sample injection chamber; use radio frequency magnetron sputtering to bombard the Si(100) substrate with ions to obtain the bombarded Si(100) substrate and send it into the high vacuum sample preparation chamber.

[0102] (2) Using Ta as the target material, a 100 nm thick Ta buffer layer is deposited on a Si(100) substrate.

[0103] (3) Using Fe and Sm targets as targets, a 950 μm thick Sm-Fe layer was deposited on the Ta buffer layer obtained in step (2) using a co-sputtering method. 1.9 layer.

[0104] (4) Using Ta as the target material, the SmFe obtained in step (3) 1.9 A 100 nm thick Ta capping layer was deposited on the layer.

[0105] (5) The Sm-Fe based permanent magnet film obtained in step (4) is annealed at 700℃ for 30 min.

[0106] The specific conditions for preparing the Sm-Fe based permanent magnet thin film in this embodiment using a dual-chamber magnetron sputtering system are as follows:

[0107] Three Si(100) substrates requiring coating were ultrasonically cleaned with analytical grade acetone for 15 min per cycle, with three ultrasonic cleaning cycles performed on each substrate. After cleaning, the Si(100) substrates were dried with nitrogen gas and then sent into the sample injection chamber, where a vacuum of better than 4 x 10⁻⁶ was applied. - 5 Pa. Next, the Si(100) substrate is subjected to ion bombardment to remove any remaining impurities and oxide layers on the substrate surface, with a background vacuum better than 4 x 10⁻⁶. -5 Pa, sputtering gas was argon with a purity of 99.9995% at a flow rate of 32 sccm, using an RF sputtering power supply with a sputtering power of 40W, sputtering for 20 minutes at room temperature.

[0108] A Si(100) substrate was placed in a high vacuum chamber for the preparation of a thin film on the substrate surface. The background vacuum was better than 6.0 × 10⁻⁶. -6Pre-sputtering was performed on the target material to be sputtered at Pa to remove any impurities or oxide layers that might exist on the target surface, ensuring that the subsequently deposited film is free of impurities. Pre-sputtering does not require specific sputtering power or time. Next, the Si(100) substrate was heated to 300°C, and 99.9995% pure argon was used as the sputtering gas. Under sputtering conditions of 0.8 Pa and a gas flow rate of 32 sccm, a 100 nm thick Ta buffer layer was prepared using a 99.99% pure Ta target. The sputtering power of the Ta target was 120 W, the sputtering rate was 11 nm / min, and the deposition time was approximately 5 min.

[0109] The substrate with the deposited Ta buffer layer was kept at 300°C, and a 950 nm thick Sm-Fe layer was sputtered using Fe and Sm targets. The sputtering power of Fe was 61 W and the sputtering rate was 6.3 nm / min. The sputtering power of Sm target was 100 W and the sputtering rate was 3.9 nm / min. The total deposition time was about 98 min.

[0110] The substrate temperature was maintained at 300℃, and a 100nm thick Ta capping layer was prepared using a Ta target with a sputtering purity of 99.99%. The sputtering power of the Ta target was 120W, the sputtering rate was 11nm / min, and the deposition time was approximately 5min.

[0111] The substrate with the deposited Ta buffer layer was heated to 550℃, and a 950 nm thick Sm-Fe layer was deposited by sputtering using Fe and Sm targets. The sputtering power of the Fe target was 61 W, and the sputtering rate was 6.3 nm / min. The sputtering power of the Sm target was 100 W, and the sputtering rate was 3.9 nm / min. The co-sputtering process took approximately 98 min. This co-sputtering resulted in an Sm:Fe ratio of 1:1.9.

[0112] The substrate temperature was lowered to 300℃, and a 100nm thick Ta capping layer was prepared using a Ta target with a sputtering purity of 99.99%. The sputtering power of the Ta target was 120W, the sputtering rate was 11nm / min, and the deposition time was approximately 5min.

[0113] The substrate was subjected to annealing heat treatment at 700℃ for 30 minutes.

[0114] Under vacuum conditions, the SmFe prepared in this embodiment was subjected to... 1.9 The permanent magnet thin film sample was annealed at 700℃, and the magnetostrictive properties of the thin film material were measured using the SmFe thin film material magnetostrictive property measurement system. 1.9 Magnetostriction coefficient diagram of (300℃ / 550℃) / Ta(BA) thin film after annealing at 700℃ for different times (e.g.) Figure 6 ).Depend on Figure 6 It can be seen that the displayed value is SmFe. 1.9Magnetostriction coefficients of (T) / Ta(BA) films prepared at different deposition temperatures and annealing times, showing a 1:2 main phase. At the same deposition temperature, a longer annealing time resulted in a larger magnetostriction coefficient (λ) for the Sm-Fe film. This is attributed to the larger grain size resulting from the longer annealing time, indicating that prolonged annealing contributes to improving the magnetostriction coefficient. Furthermore, the sample deposited at 550℃ and annealed at 700℃ for 30 min exhibited a higher magnetostriction coefficient than the sample deposited at 300℃ and annealed at 700℃ for 45 min. This is because the higher deposition temperature and heat treatment resulted in higher purity of the SmFe2 phase.

[0115] Example 3

[0116] In this embodiment, the substrate used for preparing the Sm-Fe-based permanent magnet thin film is Si(100), with a 100 nm thick Ta buffer layer deposited on its surface. Above the Ta buffer layer is a 1050 nm thick Sm-Fe layer, and above the Sm-Fe layer is a 100 nm thick Ta capping layer. The SmFe film prepared in this embodiment... 1.9 The specific steps for permanent magnet thin films are as follows:

[0117] (1) Clean the Si(100) substrate and then send it into the sample injection chamber; use radio frequency magnetron sputtering to bombard the Si(100) substrate with ions to obtain the bombarded Si(100) substrate and send it into the high vacuum sample preparation chamber.

[0118] (2) Using Ta as the target material, a 100 μm thick Ta buffer layer is deposited on a Si(100) substrate.

[0119] (3) Using Fe and Sm targets as targets, a 1050 nm thick Sm-Fe layer is deposited on the Ta buffer layer obtained in step (2) using a co-sputtering method. 1.9 layer.

[0120] (4) Using Ta as the target material, the SmFe obtained in step (3) 1.9 A 100 nm thick Ta capping layer was deposited on the layer.

[0121] (5) The Sm-Fe based permanent magnet film obtained in step (4) is annealed at 700℃ for 45 min.

[0122] The specific conditions for preparing the Sm-Fe based permanent magnet thin film in this embodiment using a dual-chamber magnetron sputtering system are as follows:

[0123] Three Si(100) substrates requiring coating were ultrasonically cleaned with analytical grade acetone for 15 min per cycle, with three ultrasonic cleaning cycles performed on each substrate. After cleaning, the Si(100) substrates were dried with nitrogen gas and then sent into the sample injection chamber, where a vacuum of better than 4 x 10⁻⁶ was applied. - 5Pa. Next, the Si(100) substrate is subjected to ion bombardment to remove any remaining impurities and oxide layers on the substrate surface, with a background vacuum better than 4 x 10⁻⁶. -5 Pa, sputtering gas was argon with a purity of 99.9995% at a flow rate of 32 sccm, using an RF sputtering power supply with a sputtering power of 40W, sputtering for 20 minutes at room temperature.

[0124] A Si(100) substrate was placed in a high vacuum chamber for the preparation of a thin film on the substrate surface. The background vacuum was better than 6.0 × 10⁻⁶. -6 Pre-sputtering was performed on the target material to be sputtered at Pa to remove any impurities or oxide layers that might exist on the target surface, ensuring that the film to be deposited later is free of impurities. Pre-sputtering does not require specific sputtering power or time. Then, the Si(100) substrate was heated to 300°C, and argon gas with a purity of 99.9995% was used as the sputtering gas. Under the conditions of sputtering gas pressure of 0.8 Pa and gas flow rate of 32 sccm, a 50 nm thick Ta buffer layer was prepared using a 99.99% Ta target. The sputtering power of the Ta target was 120 W, the sputtering rate was 11 nm / min, and the deposition time was approximately 5 min.

[0125] The substrate with the deposited Ta buffer layer was kept at 300℃, and a 1050 nm thick Sm-Fe layer was deposited by sputtering using Fe and Sm targets. The sputtering power of Fe was 61 W and the sputtering rate was 6.3 nm / min, while the sputtering power of the Sm target was 100 W and the sputtering rate was 3.9 nm / min. The co-sputtering process took approximately 98 min. This co-sputtering resulted in an Sm:Fe ratio of 1:1.9.

[0126] The substrate temperature was maintained at 300℃, and a 100nm thick Ta capping layer was prepared using a Ta target with a sputtering purity of 99.99%. The sputtering power of the Ta target was 120W, the sputtering rate was 11nm / min, and the deposition time was approximately 5min.

[0127] The substrate was subjected to annealing heat treatment at 700℃ for 45 minutes.

[0128] Under vacuum conditions, the SmFe prepared in this embodiment was subjected to... 1.9 The permanent magnet thin film sample was annealed at 700℃, and the magnetostrictive properties of the thin film material were measured using the SmFe thin film material magnetostrictive property measurement system. 1.9 Magnetostriction coefficient diagram of (300℃ / 300℃) / Ta(BA) thin film after annealing at 700℃ for different times (e.g.) Figure 6 ).Depend on Figure 6 It can be seen that the displayed value is SmFe. 1.9Magnetostriction coefficients of (T) / Ta(BA) films prepared at different deposition temperatures and annealing times, showing a 1:2 main phase. At the same deposition temperature, a longer annealing time resulted in a larger magnetostriction coefficient (λ) for the Sm-Fe film. This is attributed to the larger grain size resulting from the longer annealing time, indicating that prolonged annealing contributes to improving the magnetostriction coefficient. Furthermore, the sample deposited at 550℃ and annealed at 700℃ for 30 min exhibited a higher magnetostriction coefficient than the sample deposited at 300℃ and annealed at 700℃ for 45 min. This is because the higher deposition temperature and heat treatment resulted in higher purity of the SmFe2 phase.

[0129] Example 4

[0130] In this embodiment, the substrate used for preparing the Sm-Fe-based permanent magnet thin film is Si(100), with a 50 nm thick Ta buffer layer deposited on its surface. Above the Ta buffer layer is a 1000 nm thick Sm-Fe layer, and above the Sm-Fe layer is a 50 nm thick Ta capping layer. The SmFe film prepared in this embodiment... 1.9 The specific steps for permanent magnet thin films are as follows:

[0131] (1) Clean the Si(100) substrate and then send it into the sample injection chamber; use radio frequency magnetron sputtering to bombard the Si(100) substrate with ions to obtain the bombarded Si(100) substrate and send it into the high vacuum sample preparation chamber.

[0132] (2) Using Ta as the target material, a 50 nm thick Ta buffer layer is deposited on a Si(100) substrate.

[0133] (3) Using Fe and Sm targets as targets, a 1000 nm thick Sm-Fe layer is deposited on the Ta buffer layer obtained in step (2) using a co-sputtering method. 1.9 layer.

[0134] (4) Using Ta as the target material, the SmFe obtained in step (3) 1.9 A 50 nm thick Ta capping layer was deposited on the layer.

[0135] (5) The Sm-Fe based permanent magnet film obtained in step (4) is annealed at 700℃ for 30 min.

[0136] The specific conditions for preparing the Sm-Fe based permanent magnet thin film in this embodiment using a dual-chamber magnetron sputtering system are as follows:

[0137] Three Si(100) substrates requiring coating were ultrasonically cleaned with analytical grade acetone for 15 min per cycle, with three ultrasonic cleaning cycles performed on each substrate. After cleaning, the Si(100) substrates were dried with nitrogen gas and then sent into the sample injection chamber, where a vacuum of better than 4 x 10⁻⁶ was applied. - 5Pa. Next, the Si(100) substrate is subjected to ion bombardment to remove any remaining impurities and oxide layers on the substrate surface, with a background vacuum better than 4 x 10⁻⁶. -5 Pa, sputtering gas was argon with a purity of 99.9995% at a flow rate of 32 sccm, using an RF sputtering power supply with a sputtering power of 40W, sputtering for 20 minutes at room temperature.

[0138] A Si(100) substrate was placed in a high vacuum chamber for the preparation of a thin film on the substrate surface. The background vacuum was better than 6.0 × 10⁻⁶. -6 Pre-sputtering was performed on the target material to be sputtered at Pa to remove any impurities or oxide layers that might exist on the target surface, ensuring that the film to be deposited later is free of impurities. Pre-sputtering does not require specific sputtering power or time. Then, the Si(100) substrate was heated to 300°C, and argon gas with a purity of 99.9995% was used as the sputtering gas. Under the conditions of sputtering gas pressure of 0.8 Pa and gas flow rate of 32 sccm, a 50 nm thick Ta buffer layer was prepared using a 99.99% Ta target. The sputtering power of the Ta target was 120 W, the sputtering rate was 11 nm / min, and the deposition time was approximately 5 min.

[0139] The substrate with the deposited Ta buffer layer was kept at 300℃, and a 1000 nm thick Sm-Fe layer was deposited by sputtering using Fe and Sm targets. The sputtering power of the Fe target was 61 W and the sputtering rate was 6.3 nm / min, while the sputtering power of the Sm target was 100 W and the sputtering rate was 3.9 nm / min. The co-sputtering process took approximately 98 min. This co-sputtering resulted in an Sm:Fe ratio of 1:1.9.

[0140] The substrate temperature was maintained at 300℃, and a 100nm thick Ta capping layer was prepared using a Ta target with a sputtering purity of 99.99%. The sputtering power of the Ta target was 120W, the sputtering rate was 11nm / min, and the deposition time was approximately 5min.

[0141] The substrate temperature of the deposited Ta buffer layer was maintained at 300℃. A 1000 nm thick Sm-Fe layer was deposited by sputtering using Fe and Sm targets. The sputtering power of Fe was 61 W and the sputtering rate was 6.3 nm / min. The sputtering power of Sm target was 100 W and the sputtering rate was 3.9 nm / min. The total deposition time was approximately 98 min.

[0142] The substrate temperature was maintained at 300℃, and a 100nm thick Ta capping layer was prepared using a Ta target with a sputtering purity of 99.99%. The sputtering power of the Ta target was 120W, the sputtering rate was 11nm / min, and the deposition time was approximately 5min.

[0143] The substrate was subjected to annealing heat treatment at 700℃ for 60 minutes.

[0144] Under vacuum conditions, the SmFe prepared in this embodiment was subjected to... 1.9 The permanent magnet thin film sample was annealed at 700℃, and the magnetostrictive properties of the thin film material were measured using the SmFe thin film material magnetostrictive property measurement system. 1.9 Magnetostriction coefficient diagram of (300℃ / 300℃) / Ta(BA) thin film after annealing at 700℃ for different times (e.g.) Figure 6 ).Depend on Figure 6 It can be seen that the displayed value is SmFe. 1.9 Magnetostriction coefficients of (T) / Ta(BA) films with a 1:2 main phase prepared at different deposition temperatures and annealing times are shown in the graph. At the same deposition temperature, a longer annealing time results in a larger magnetostriction coefficient (λ) for the Sm-Fe film. This is because a longer annealing time leads to a larger grain size, indicating that prolonged annealing helps improve the magnetostriction coefficient. Furthermore, the sample deposited at 550℃ and annealed at 700℃ for 30 min has a higher magnetostriction coefficient than the sample deposited at 300℃ and annealed at 700℃ for 45 min, because the higher deposition and heat treatment result in higher purity of the SmFe2 phase. The sample deposited at 300℃ and annealed at 700℃ for 60 min reaches the maximum magnetostriction coefficient. Figure 2b It can be seen that 250-350℃ is the ideal phase formation temperature for SmFe2. Based on this, extending the annealing heat treatment time is quite effective.

[0145] In addition, the inventors of this case also conducted experiments with other raw materials and conditions listed in this specification, referring to the above embodiments, and obtained similar results.

[0146] It should be noted that the above description is only a preferred embodiment of this application and is not intended to limit this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for preparing Sm-Fe based permanent magnet thin films, characterized in that, include: A Ta buffer layer was formed by sputtering and depositing an inert gas on a substrate surface using magnetron sputtering technology with a Ta target as the target material. The pressure of the inert gas used was 0.8~3 Pa, the sputtering power was 50~120 W, the sputtering time was 5~10 min, and the deposition temperature was 250~350℃. Using magnetron sputtering technology, with inert gas as the sputtering gas and Fe and Sm targets as targets, a co-sputtering method is used to deposit an Sm-Fe layer on the surface of a Ta buffer layer. The pressure of the inert gas used is 0.8~3 Pa, the sputtering power is 10~150 W, the sputtering time is 10~250 min, and the deposition temperature is 250~550℃. A Ta capping layer was formed on the surface of a Sm-Fe layer by sputtering using magnetron sputtering technology with an inert gas as the sputtering gas and a Ta target as the target material. The pressure of the inert gas used was 0.8~3 Pa, the sputtering power was 50~120 W, the sputtering time was 3~60 min, and the deposition temperature was 250~350℃. The obtained composite film is then subjected to annealing heat treatment to obtain Sm-Fe based permanent magnet film. The annealing heat treatment temperature is 700℃ and the annealing heat treatment time is 30~60min. The Sm-Fe-based permanent magnet thin film comprises a Ta buffer layer, a Sm-Fe layer, and a Ta capping layer sequentially stacked along the thickness direction of the substrate. The Sm-Fe layer exhibits magnetic perpendicular anisotropy and comprises pure SmFe. x Polycrystalline thin films, x=1.8~2.

2. The preparation method according to claim 1, characterized in that: The annealing heat treatment time is 45~60 min; The inert gas includes argon; The preparation method further includes: before depositing a Ta buffer layer on the substrate, using magnetron sputtering technology with an inert gas as the sputtering gas to bombard the substrate surface with ions; wherein the pressure of the inert gas used is 1~5 Pa, the sputtering power is 20~60 W, and the sputtering time is 10~40 min.

3. The preparation method according to claim 1, characterized in that: The Sm-Fe layer comprises pure SmFe. 1.9 The Sm-Fe layer is a polycrystalline thin film with a thickness of 950~1050 nm.

4. The preparation method according to claim 1, characterized in that: The substrate includes at least one of Si substrate, Si / SiO2 substrate, and alumina substrate.

5. The preparation method according to claim 1, characterized in that: The thickness of the Ta buffer layer is 50~100nm.

6. The preparation method according to claim 1, characterized in that: The thickness of the Ta capping layer is 50~100nm.

7. The preparation method according to claim 1, characterized in that: The thickness of the Sm-Fe based permanent magnet thin film is 1050~1250nm.

8. The application of Sm-Fe based permanent magnet thin films prepared by any one of claims 1-7 in microelectronic systems, microelectromechanical systems, magnetic recording materials or spintronic devices.

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