Semiconductor heat treatment equipment and process chamber thereof

Abstract

The invention provides semiconductor heat treatment equipment and a process chamber thereof. The process chamber comprises a heating piece and a dielectric window, and the heating piece is arranged on the outer side of the dielectric window and used for radiating light waves to the inner side of the dielectric window through the dielectric window; wherein a reflection increasing film and an antireflection film are sequentially arranged on the dielectric window in the thickness direction of the dielectric window, the reflection increasing film is used for increasing the reflectivity of a first light wave with the wavelength within a first wavelength range, and the antireflection film is used for increasing the transmissivity of a second light wave with the wavelength within a second wavelength range; the maximum value of the first wavelength range is smaller than or equal to the minimum value of the second wavelength range. According to the invention, short-wavelength light can be filtered out to reduce thermal load, and long-wavelength light is used for heat radiation transmission, so that light waves with overhigh heat can be filtered out while heat is provided for a wafer, and the ultra-low temperature process capability is further realized.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to, but are not limited to, the field of semiconductor technology, and in particular, to a semiconductor thermal processing device and a process chamber thereof. Background Art

[0002] With the continuous iteration of integrated circuit technology and the gradual improvement of the process, the dielectric window requirements of the rapid thermal annealing process (RTA) are also gradually increasing. With the reduction of process nodes, the control accuracy requirements for process parameters are becoming more stringent, so the dielectric window of RTA must also be continuously optimized to meet higher technical requirements. At present, the process temperature of RTA is mainly concentrated in the medium and high temperature range (600℃-1200℃). However, too high a process temperature will cause the overall thermal budget of the wafer to be too high, which will have an adverse effect on process stability and formation. With the continuous development of the process, the thickness of the Ni (or Pt) film is getting thinner and thinner. According to existing theories, the optimal process conditions are 310℃ / 60 seconds and 480℃ / 10 seconds. However, due to current technical limitations, existing heat treatment equipment cannot yet achieve such an ultra-low temperature annealing process.

[0003] In addition, when the process environment temperature is lower than 450°C, new problems arise in optical temperature measurement technology. The 900-1000nm wavelength light emitted by the halogen lamp will penetrate the wafer and directly irradiate the thermometer (the temperature measurement wavelength range of the thermometer is 900-1000nm). In this case, the temperature measured by the thermometer contains two parts of energy: the energy radiated by the wafer and the energy of the wavelength light in the range of 900-1000nm emitted by the halogen lamp that penetrates the wafer and directly reaches the thermometer. This results in the thermometer reading not being the actual temperature of the wafer, and its measured value is actually higher than the actual temperature of the wafer itself, thereby introducing a significant temperature measurement error.

[0004] In order to meet the requirements of RTP ultra-low temperature process, improvements need to be made in the following two aspects:

[0005] (1) Reduce the temperature rise rate of the wafer;

[0006] (2) Eliminate the influence of halogen lamp on the thermometer under ultra-low temperature, thereby improving the accuracy of temperature measurement. Summary of the invention

[0007] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor heat treatment device and a process chamber thereof, which can achieve ultra-low temperature process capability.

[0008] In order to achieve the purpose of the present invention, a process chamber is provided, comprising a heating element and a dielectric window, wherein the heating element is arranged on the outer side of the dielectric window and is used to radiate light waves to the inner side of the dielectric window through the dielectric window; wherein an anti-reflection film and an anti-reflection film are sequentially arranged on the dielectric window along its thickness direction, wherein the anti-reflection film is used to increase the reflectivity of a first light wave having a wavelength within a first wavelength range, and the anti-reflection film is used to increase the transmittance of a second light wave having a wavelength within a second wavelength range, and the maximum value of the first wavelength range is less than or equal to the minimum value of the second wavelength range.

[0009] In some embodiments, the first wavelength range is 600 nm to 1200 nm, and the second wavelength range is 1200 nm to 2000 nm.

[0010] In some embodiments, the anti-reflection film includes at least one group of film layer structures, each of which includes a first light-transmitting medium layer and a second light-transmitting medium layer that are stacked, and the refractive index of the first light-transmitting medium layer is different from the refractive index of the second light-transmitting medium layer; the first light-transmitting medium layer is used to reflect the first light wave to generate a first reflected light, and the second light-transmitting medium layer is used to reflect the first light wave to generate a second reflected light; the thickness of the second light-transmitting medium layer is sufficient to make the optical path difference between the first reflected light and the second reflected light an even multiple of half the wavelength of the first light wave.

[0011] In some embodiments, the thickness of the second light-transmitting medium layer is one quarter of the wavelength of the first light wave.

[0012] In some embodiments, the thickness of the second light-transmitting medium layer is 150 nm to 300 nm.

[0013] In some embodiments, the first light-transmitting medium layer includes a silicon oxide film.

[0014] In some embodiments, the second light-transmitting medium layer includes a titanium oxide thin film.

[0015] In some embodiments, the anti-reflection film includes at least one group of film layer structures, each of which includes a third light-transmitting medium layer and a fourth light-transmitting medium layer that are stacked, and the refractive index of the third light-transmitting medium layer is different from the refractive index of the fourth light-transmitting medium layer; the third light-transmitting medium layer is used to reflect the second light wave to generate a third reflected light, and the fourth light-transmitting medium layer is used to reflect the second light wave to generate a fourth reflected light; the thickness of the fourth light-transmitting medium layer is sufficient to make the optical path difference between the third reflected light and the fourth reflected light an odd multiple of half the wavelength of the second light wave.

[0016] In some embodiments, the thickness of the fourth light-transmitting medium layer is half of the wavelength of the second light wave.

[0017] In some embodiments, the thickness of the fourth light-transmitting medium layer is 600 nm to 1000 nm.

[0018] In some embodiments, the third light-transmitting medium layer includes a silicon oxide film.

[0019] In some embodiments, the fourth light-transmitting medium layer includes a tantalum oxide thin film.

[0020] In some embodiments, the process chamber also includes a mounting base for mounting the heating element, and a cooling pipe for cooling medium to flow is formed inside the mounting base, the cooling pipe includes a first pipe, a plurality of second pipes arranged along a direction parallel to the thickness of the medium window, an inlet pipe and an outlet pipe, the first pipe is arranged on the outer periphery of the plurality of second pipes along the circumference of the mounting base, the inlet pipe is connected to the inlet of the first pipe, and the outlet pipe is connected to the outlet of the first pipe; each layer of the second pipe includes a plurality of sub-pipes arranged along the first direction, each sub-pipe is extended along the second direction, and both ends of each sub-pipe are connected to the first pipe; the first direction, the second direction and the thickness direction of the medium window are perpendicular to each other; a plurality of rows of porous structures are formed inside the mounting base, each row of the porous structure includes a plurality of mounting holes distributed in sequence along the second direction, a heating lamp of the heating element can be installed in each mounting hole, and a row of porous structures is arranged between every two adjacent sub-pipes.

[0021] The present invention also provides a semiconductor heat treatment device, comprising the above-mentioned process chamber.

[0022] The present invention has the following beneficial effects:

[0023] In the embodiment of the present invention, an anti-reflection film is arranged on the dielectric window. The anti-reflection film can increase the reflectivity of the first light wave, which means that most of the first light wave with larger energy is reflected back to the heating element, so as to avoid a large amount of the first light wave from irradiating the wafer through the dielectric window, thereby realizing the current ultra-low temperature process capability. An anti-reflection film is also arranged on the dielectric window. The anti-reflection film can increase the transmittance of the second light wave, which means that most of the second light wave with smaller energy is introduced into the wafer through the dielectric window to heat the wafer. The process chamber of the embodiment of the present invention filters out short-wavelength light to reduce heat load by arranging an anti-reflection film and an anti-reflection film on the dielectric window, and transmits long wavelengths for heat radiation transfer, so as to provide heat to the wafer while filtering out light waves with excessive heat, thereby realizing ultra-low temperature process capability.

[0024] Other objects and features of the present invention will become apparent by reading the specification, claims and drawings of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0026] Figure 1 It is a structural schematic diagram of semiconductor heat treatment equipment in the related art.

[0027] Figure 2 It is a schematic diagram of the specific location of installing the cooling element in the related art.

[0028] Figure 3 yes Figure 2 A partial enlarged view of the cooling unit being installed.

[0029] Figure 4 yes Figure 3 sectional view of .

[0030] Figure 5 It is a structural schematic diagram of a process chamber according to an embodiment of the present invention.

[0031] Figure 6 It is a schematic structural diagram of an anti-reflection film and an anti-reflection film according to an embodiment of the present invention.

[0032] Figure 7 It is a schematic diagram of the relative positions of an anti-reflection film and an anti-reflection film according to an embodiment of the present invention.

[0033] Figure 8 It is a schematic structural diagram of a heating element according to an embodiment of the present invention.

[0034] Fig. 9 This is a light output energy diagram when all the heating lamps of the heating element in the present invention are in high power output, wherein the horizontal axis represents the wavelength (in nm) and the vertical axis represents the energy of the light (in W).

[0035] Fig.10 is with Fig. 9 When the specifications and quantity of the heating lamps are the same and all the heating lamps are at low power output, the light output energy diagram is shown, where the horizontal axis represents the wavelength (in nm) and the vertical axis represents the energy of the light (in W).

[0036] Fig.11 It is a schematic diagram of transmittance of a process chamber of an embodiment of the present invention at different wavelengths using TF Calc, wherein the abscissa represents wavelength (Wavelength, in nm), and the ordinate represents transmittance (Transmittance, in %).

[0037] Fig.12 It is a structural schematic diagram of a mounting base according to an embodiment of the present invention.

[0038] Fig.13 4 is a cross-sectional view of the mounting base along the dotted line A according to the embodiment of the present invention.

[0039] Fig.14 4 is a cross-sectional view of the mounting base along the dotted line B according to the embodiment of the present invention.

[0040] Description of main component symbols:

[0041] 1. Cavity; 2. Halogen lamp; 3. Cooling honeycomb; 4. Heating flange; 5. Dielectric window; 6. Reflector; 7. Thermometer; 8. Rotation system; 9. Cooling system; 10. Wafer; 11. Base; 12. Install cooling element; 13. Cavity; 14. Mounting seat; 15. Water inlet; 16. Water outlet;

[0042] 100, cavity; 200, heating element; 300, dielectric window; 400, anti-reflection film; 500, anti-reflection film; 600, temperature measuring instrument; 700, reflector;

[0043] 210, light source; 220, reflection screen;

[0044] 410, a first light-transmitting medium layer; 420, a second light-transmitting medium layer;

[0045] 510, a third light-transmitting medium layer; 520, a fourth light-transmitting medium layer;

[0046] 810, cooling chamber; 820, inlet pipe; 830, outlet pipe; 840, sub-pipe; 850, mounting base; 860, first pipe; 870, mounting hole;

[0047] x, first direction; y, second direction. DETAILED DESCRIPTION

[0048] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0049] Semiconductor heat treatment equipment is one of the key process equipment in the integrated circuit manufacturing process, which is mainly used to quickly heat and cool the wafer 10 to meet various process requirements (such as annealing, diffusion, etc.). In an optional embodiment, see Figure 1, the semiconductor heat treatment equipment may include a cavity 1, a halogen lamp 2, a dielectric window 5, a cooling honeycomb 3, a heating flange 4, a reflector 6, a thermometer 7, a rotating system 8 and a cooling system 9. Among them, the cavity 1 is used to accommodate the wafer 10 and provide a controllable process environment, and prevent the surface of the wafer 10 from being oxidized or contaminated by maintaining a stable pressure and gas atmosphere (such as nitrogen or an inert gas). The halogen lamp 2 is located outside the cavity 1, and is used as an energy transmitter of the semiconductor heat treatment equipment to provide strong heat energy to the wafer 10. Specifically, the light emitted by the halogen lamp 2 penetrates the dielectric window 5 and directly irradiates the surface of the wafer 10 to achieve rapid temperature rise. The dielectric window 5 is located between the wafer 10 and the halogen lamp 2, and is used to isolate the halogen lamp 2 from the internal environment of the cavity 1, while ensuring that the light emitted by the halogen lamp 2 can efficiently penetrate the dielectric window 5 to reach the cavity 1. The cooling honeycomb 3 is located outside the cavity 1, and is used to install the halogen lamp 2 in the cavity 1 and cool the cooling honeycomb 3. The heating flange 4 is located between the cooling honeycomb 3 and the cavity 1, and is used to fix the cooling honeycomb 3 to the cavity 1. The reflector 6 is located inside the cavity 1 and below the wafer 10, and is used to reflect the scattered light back to the surface of the wafer 10 to form a theoretical "absolute white body".

[0050] (i.e., the reflectivity is 1) to improve the temperature measurement accuracy of the thermometer 7. The thermometer 7 is used to monitor the surface temperature of the wafer 10 in real time, usually using infrared or multi-wavelength temperature measurement technology to achieve non-contact and accurate temperature measurement. The rotation system 8 is used to support and drive the wafer 10 to rotate so that the surface of the wafer 10 is heated evenly to avoid local stress or structural degradation caused by uneven temperature distribution. The cooling system 9 is used to prevent the cavity 1 from overheating during high-temperature processes.

[0051] At the beginning of the semiconductor process, the wafer 10 is placed on the rotating system 8, the chamber 1 is filled with a stable protective gas (such as nitrogen or an inert gas), and the pressure of the chamber 1 is adjusted to meet the process requirements. Subsequently, the halogen lamp 2 emits a strong light through the dielectric window 5 to transfer heat energy to the surface of the wafer 10. The reflector 6 and the rotating system 8 work together to ensure that the wafer 10 is heated evenly. Through real-time temperature monitoring and regulation, the wafer 10 reaches the target temperature in a short time. At the target temperature, the wafer 10 is maintained for a certain time (usually a few seconds to tens of seconds) to complete the required physical or chemical reaction. For example, during the annealing process, the crystal structure of the wafer 10 will be repaired, or silicide will be formed evenly. After stopping heating, the cooling system 9 quickly lowers the temperature of the chamber 1 to quickly cool down the wafer 10.

[0052] However, the semiconductor heat treatment equipment in the related art has at least the following disadvantages:

[0053] (1) The power of the halogen lamp 2 is too high, and there are a large number of halogen lamps 2. Even at the minimum power, the temperature of the wafer 10 will quickly rise to over 300°C. Since the energy input efficiency of the equipment is significantly higher than the heat dissipation capacity, the temperature control system cannot achieve closed-loop control. For ultra-low temperature processes, the wafer 10 is required to be stably kept at 310°C for 60 seconds. However, the high-power halogen lamp 2 cannot meet the above process temperature, making it difficult to achieve ultra-low temperature process requirements.

[0054] (2) When the temperature of the wafer 10 is lower than 450°C, due to the characteristics of the wafer 10, the light with a wavelength of 900-1000nm can penetrate the wafer 10 and directly irradiate the thermometer 7 (the temperature measurement wavelength of the thermometer 7 is 900-1000nm). In this case, the temperature value fed back by the thermometer 7 contains two parts of energy: the energy radiated by the wafer 10 and the energy of the 900-1000nm wavelength light emitted by the halogen lamp 2 that penetrates the wafer 10 and directly irradiates the thermometer 7. As a result, the measured value of the thermometer 7 is higher than the actual temperature of the wafer 10, resulting in a large temperature measurement error. This error is particularly significant in ultra-low temperature processes and seriously affects process accuracy.

[0055] In order to solve at least one of the above problems, the present invention provides a process chamber, and an anti-reflection film 500 and an anti-reflection film 400 are arranged on the dielectric window 300, which can effectively overcome the technical bottleneck of excessive temperature rise of the wafer 10 caused by excessive power of the halogen lamp 2 in related equipment, and finally realize the stable temperature control capability of the semiconductor heat treatment equipment under the ultra-low temperature process.

[0056] In order to better explain this embodiment, the following is described in combination with the drawings. It should be noted that the structure in the drawings is only for schematic illustration and does not specifically limit the structure in this embodiment. Other structures derived therefrom are also within the protection scope of the present invention.

[0057] See also Figure 5, the process chamber includes a heating element 200 and a dielectric window 300. The process chamber also includes a cavity 100 for accommodating a wafer 10, the heating element 200 is located outside the cavity 100, and the dielectric window 300 is located between the heating element 200 and the wafer 10. The heating element 200 is disposed outside the dielectric window 300, and is used to radiate light waves to the inside of the dielectric window 300 through the dielectric window 300. The inside of the dielectric window 300 refers to a side closer to the wafer 10, and the outside of the dielectric window 300 refers to a side away from the wafer 10. The dielectric window 300 is provided with an anti-reflection film 400 and an anti-reflection film 500 in sequence along the thickness direction thereof. As for the relative positions of the anti-reflection film 400 and the anti-reflection film 500 and the dielectric window 300, there is no limitation here. Schematically, the anti-reflection film 400, the anti-reflection film 500 and the dielectric window 300 are provided in sequence in a direction away from the heating element 200, or the anti-reflection film 400, the dielectric window 300 and the anti-reflection film 500 are provided in sequence in a direction away from the heating element 200 (see Figure 7 ), or the dielectric window 300, the anti-reflection film 400 and the anti-reflection film 500 are arranged in sequence along the direction away from the heating element 200, or the anti-reflection film 500, the anti-reflection film 400 and the dielectric window 300 are arranged in sequence along the direction away from the heating element 200, or the anti-reflection film 500, the dielectric window 300 and the anti-reflection film 400 are arranged in sequence along the direction away from the heating element 200, or the dielectric window 300, the anti-reflection film 500 and the anti-reflection film 400 are arranged in sequence along the direction away from the heating element 200.

[0058] Specifically, the anti-reflection film 400 is used to increase the reflectivity of the first light wave with a wavelength within a first wavelength range, and the anti-reflection film 500 is used to increase the transmittance of the second light wave with a wavelength within a second wavelength range, and the maximum value of the first wavelength range is less than or equal to the minimum value of the second wavelength range.

[0059] It can be understood that the wavelength of light is inversely proportional to the light energy. The longer the light wave, the smaller the energy; the shorter the light wave, the greater its energy. Since the wavelength of the first light wave is less than or equal to the second wavelength, the energy of the first light wave is greater than or equal to the energy of the second light wave. In the embodiment of the present invention, an anti-reflection film 400 is arranged on the dielectric window 300. The anti-reflection film 400 can increase the reflectivity of the first light wave, which means that most of the first light wave with larger energy is reflected back to the heating element 200, so as to avoid a large amount of the first light wave from irradiating the wafer 10 through the dielectric window 300, thereby realizing the current ultra-low temperature process capability. An anti-reflection film 500 is arranged on the dielectric window 300. The anti-reflection film 500 can increase the transmittance of the second light wave, which means that most of the second light wave with smaller energy is introduced into the wafer 10 through the dielectric window 300 to heat the wafer 10. The process chamber of the embodiment of the present invention sets an anti-reflection film 400 and an anti-reflection film 500 on the dielectric window 300 to filter out short-wavelength light to reduce heat load, and transmits long wavelengths for thermal radiation transfer, so as to provide heat to the wafer 10 while filtering out light waves with excessive heat, thereby achieving ultra-low temperature process capabilities.

[0060] The anti-reflection film 400 and the anti-reflection film 500 disposed on the dielectric window 300 in the embodiment of the present invention can filter out light of a specific wavelength while reducing energy input, so as to improve the measurement accuracy of the temperature measuring instrument 600. When the heating element 200 in the process chamber includes a plurality of heating lamps (e.g., halogen lamps), the heating element 200 operates at a minimum power (8% of the maximum power) and a maximum power, respectively. Fig. 9 and Fig.10 , the proportion of light energy emitted by the heating element 200 at different wavelengths is different. Fig. 9 When the heating element 200 works at maximum power, most of the energy is concentrated in the wavelength range of 600nm to 1200nm, which is also the sensitive wavelength range of the current temperature measuring instrument 600. Fig.10 When the power of the heating element 200 is 8% of the maximum power, about 50% of the energy is concentrated in the wavelength range of 400-1200nm. As the power of the heating element 200 increases, the energy peak output by the heating element 200 begins to move toward the near infrared (<1200nm is near infrared light).

[0061] According to Fig. 9 and Fig.10From the comparative analysis, it can be seen that the energy emitted by the heating lamp is mainly concentrated in the range of 600nm to 1200nm. If the light with a wavelength of 600nm to 1200nm is directly filtered out, the energy input can be reduced by about 50%, ensuring that the temperature of the wafer 10 is in the low temperature section, thereby achieving effective temperature control of the wafer 10 without the problem of excessive temperature rise. At the same time, the sensitive band of the thermometer 600 is also between 600nm and 1200nm. Therefore, in order to filter out a portion of the light with the highest energy to achieve the low-temperature process of semiconductor heat treatment equipment and improve the temperature measurement accuracy of the thermometer 600, the first wavelength range is 600nm to 1200nm, so as to increase the reflectivity of the first light wave in this wavelength section through the anti-reflection film 400, and minimize the light with a wavelength of 600nm to 1200nm from being radiated to the wafer 10 through the dielectric window 300.

[0062] In order to ensure both the low temperature environment and the heating efficiency of the wafer 10, the second wavelength range can be set to 1200nm to 2000nm. The wavelength range of 1200nm to 2000nm is short infrared light, and the energy of infrared light in this wavelength range is relatively low. The anti-reflection film 500 can be used to increase the transmittance of light in this wavelength range to ensure the heating efficiency of the wafer 10. Fig.11 From the test results in the figure, it can be observed that the transmittance characteristics of the dielectric window 300 provided with the anti-reflection film 400 and the anti-reflection film 500 at different wavelengths. Fig.11 The mid-wavelength range is from 500nm to 2550nm, covering visible light to near-infrared bands. In the 600nm to 1200nm band, the transmittance is extremely low, and most of the light is reflected to shield short-wavelength light and prevent it from affecting the low-temperature environment of the process chamber. In the 1200nm to 2000nm band, the transmittance rises rapidly and approaches 100%, and most of the light is transmitted, reducing the energy loss in the dielectric window 300, which can effectively improve the closed-loop control accuracy. Fig.11 The test results shown in show that the first wavelength range of 600nm to 1200nm and the second wavelength range of 1200nm to 2000nm can meet the requirements of the functional design of the present invention.

[0063] The anti-reflection film 400 and the anti-reflection film 500 in the process chamber of the embodiment of the present invention show wavelength selectivity, have strong reflection performance for short wavelengths (600nm to 1200nm), and have extremely high transmittance for long wavelengths (1200nm to 2000nm). The anti-reflection film 400 and the anti-reflection film 500 of the embodiment of the present invention can effectively filter the 900nm to 1000nm wavelength light emitted by the heating element 200, filter out the sensitive light of the thermometer 600 while reducing the energy input, ensure that the thermometer 600 only records the real energy radiated by the wafer 10 during the measurement process, eliminate the interference of the light emitted by the heating element 200 on the temperature measurement accuracy, reduce the temperature measurement error of the thermometer 600, and improve the temperature control accuracy under the ultra-low temperature process. The process chamber can reduce the output power of the heating element 200, match the heat energy input by the semiconductor heat treatment equipment with the heat dissipation capacity, and thus reduce the temperature rise rate of the wafer 10. Between 300℃-450℃, the temperature rise process is ensured to be more stable and the closed-loop control of the temperature control system is achieved. By optimizing the power output, the process temperature curve can be stabilized at the target temperature with small temperature fluctuations, meeting the stability requirements of the ultra-low temperature process.

[0064] In an optional embodiment, the anti-reflection film 400 and the anti-reflection film 500 can be disposed on the dielectric window 300 by coating. The current coating technology has high requirements on the material shape and surface flatness. The dielectric window 300 has high flatness, and the coating technology is easy to implement.

[0065] It should be noted that the main principle of optical coating is the thin film interference principle. When light waves are irradiated onto a thin film, the light will be reflected by the upper and lower interfaces of the thin film due to different refractive indices, and new light waves will be formed due to mutual interference. This principle can be used to control light to achieve different transmittances of different bands on the same object, thereby meeting the requirements of process use.

[0066] Take the thermal radiation light waves generated by the heating element 200 as an example, see Figure 6 The four layers from top to bottom are formed by alternating materials with refractive index n1 (low refractive index, optically sparse medium) and refractive index n2 (high refractive index, optically dense medium). When the light wave is incident into the optically sparse medium layer, and then passes through the optically sparse medium layer and is incident on the interface between the optically sparse medium layer and the optically dense medium layer (such as Figure 6 When the light wave is incident on the optically denser medium layer, and then incident on the interface between the optically denser medium layer and the medium adjacent to the optically denser medium layer and far away from the optically sparser medium layer (such as Figure 6As shown in the middle interface b, hereinafter referred to as the second interface), part of the light wave incident on the second interface will also be reflected to generate reflected light L2; the other part will be incident on the optically sparse medium in the lower layer (refer to L3). The reflected light L1 can be reflected to the heating element 200 through the optically sparse medium layer, and the reflected light L2 can be reflected to the heating element 200 through the optically dense medium layer and the optically sparse medium layer in sequence. Therefore, the reflected light L1 and the reflected light L2 may interfere with each other in the process of being reflected to the heating element 200.

[0067] In some embodiments, the anti-reflection film 400 includes at least one group of film layer structures, each of which includes a first light-transmitting medium layer 410 and a second light-transmitting medium layer 420 stacked, and the refractive index of the first light-transmitting medium layer 410 is different from the refractive index of the second light-transmitting medium layer 420. The first light-transmitting medium layer 410 is used to reflect the first light wave to generate the first reflected light (such as Figure 6 The second transparent medium layer 420 is used to reflect the first light wave to generate the second reflected light (as shown in FIG. Figure 6 The thickness of the second light-transmitting medium layer 420 is such that the optical path difference between the first reflected light and the second reflected light is an even multiple of half the wavelength of the first light wave.

[0068] The anti-reflection film 400 provided in the embodiment of the present invention can generate a first reflected light by reflecting the first light wave with the help of the first light transparent medium layer 410 and the second light transparent medium layer 420 by stacking the first light transparent medium layer 410 and the second light transparent medium layer 420, and make the refractive index of the first light transparent medium layer 410 and the refractive index of the second light transparent medium layer 420 different. When the first light wave is incident from the first light transparent medium layer 410, the first light wave can be reflected by the first light transparent medium layer 410 to generate a first reflected light, and the first light wave can be reflected by the second light transparent medium layer 420 to generate a second reflected light. Since the thickness of the second light transparent medium layer 420 satisfies the requirement that the optical path difference between the first reflected light and the second reflected light is an even multiple of half of the wavelength of the first light wave, the phase of the first reflected light and the phase of the second reflected light are the same, and the first reflected light and the second reflected light are coherent and constructive and superimposed on each other, thereby increasing the reflectivity of the first light wave. Then, when the anti-reflection film 400 provided in the embodiment of the present invention is set on the dielectric window 300, the reflectivity of the first light wave can be increased.

[0069] In other embodiments, the antireflection film 500 includes at least one group of film layer structures, each of which includes a third light-transmitting medium layer 510 and a fourth light-transmitting medium layer 520 stacked, and the refractive index of the third light-transmitting medium layer 510 is different from the refractive index of the fourth light-transmitting medium layer 520. The third light-transmitting medium layer 510 is used to reflect the second light wave to generate a third reflected light (such as Figure 6 The fourth transparent medium layer 520 is used to reflect the second light wave to generate a fourth reflected light (as shown in FIG. Figure 6The thickness of the fourth light-transmitting medium layer 520 is such that the optical path difference between the third reflected light and the fourth reflected light is an odd multiple of half the wavelength of the second light wave.

[0070] The anti-reflection film 500 provided in the embodiment of the present invention, by stacking a third light-transmitting medium layer 510 and a fourth light-transmitting medium layer 520, and making the refractive index of the third light-transmitting medium layer 510 different from that of the fourth light-transmitting medium layer 520, can, when the second light wave is incident from the third light-transmitting medium layer 510, reflect the second light wave with the help of the third light-transmitting medium layer 510 to generate a third reflected light, and can reflect the second light wave with the help of the fourth light-transmitting medium layer 520 to generate a fourth reflected light. Since the thickness of the fourth light-transmitting medium layer 520 satisfies the requirement that the optical path difference between the third reflected light and the fourth reflected light is an odd multiple of one-half of the wavelength of the second light wave, the phase of the third reflected light is opposite to that of the fourth reflected light, and the third reflected light and the fourth reflected light are coherently subtracted and offset from each other, thereby increasing the transmittance of the second light wave. Subsequently, when the anti-reflection film 500 provided in the embodiment of the present invention is disposed on the dielectric window 300, the transmittance of the second light wave can be increased.

[0071] In some embodiments, when the first light-transmitting medium layer 410 is used for incident light waves, the first light-transmitting medium layer 410 is closer to the heating element 200 than the second light-transmitting medium layer 420 .

[0072] In a preferred embodiment of the present invention, the refractive index of the first light-transmitting medium layer 410 may be smaller than the refractive index of the second light-transmitting medium layer 420. In other words, the first light-transmitting medium layer 410 is an optically sparse medium relative to the second light-transmitting medium layer 420, and the second light-transmitting medium layer 420 is an optically dense medium relative to the first light-transmitting medium layer 410.

[0073] In a preferred embodiment of the present invention, the anti-reflection film 400 may include multiple groups of film layer structures, and the multiple groups of film layer structures are stacked in sequence.

[0074] Such an arrangement is due to the fact that, when the first light wave is incident on the second interface, part of the first light wave may pass through the second interface and be incident on the medium adjacent to the second light-transmitting medium layer 420 and away from the first light-transmitting medium layer 410, that is, the first interface and the second interface may not be able to reflect all of the light waves to the heating element 200. By stacking a plurality of groups of film layer structures in sequence, the medium adjacent to the second light-transmitting medium layer 420 of one group of film layer structures and away from the first light-transmitting medium layer 410 is the first light-transmitting medium layer 410 of another group of film layer structures. In this way, after part of the first light wave passes through the second interface of one group of film layer structures, it can be incident on the first light-transmitting medium layer 410 of another group of film layer structures. In this way, the light wave incident on the other group of film layer structures can be reflected by means of the first interface and the second interface of the other group of film layer structures, and the light wave incident on the other group of film layer structures can be reflected to the heating element 200, thereby further improving the reflectivity.

[0075] When the number of film layer structures is infinite, the reflectivity of the anti-reflection film 400 can be increased to 100%. However, in practical applications, considering the thickness factor, the reflectivity of the anti-reflection film 400 can be increased to 95%.

[0076] In a preferred embodiment of the present invention, the thickness of the second light-transmitting medium layer 420 is one quarter of the wavelength of the first light wave.

[0077] This arrangement is due to the fact that the optical path of a portion of the light wave emitted at the first interface (i.e., the first reflected light) is δ1 (the thickness of the first light-transmitting medium layer 410) + δ1, and the optical path of a portion of the light wave emitted at the second interface (i.e., the second reflected light) is δ1 + δ2 (the thickness of the second light-transmitting medium layer 420) + δ1 + δ2, and there will be a half-wave loss when the first light wave is incident from the first light-transmitting medium layer 410 to the second light-transmitting medium layer 420. Therefore, the optical path difference between the first reflected light and the second reflected light is (δ1 + δ2 + δ1 + δ2) - (δ1 + δ1) + λ (the wavelength of the light wave) / 2 = 2δ2 + λ / 2. In order to make the optical path difference between the first reflected light and the second reflected light an even multiple of half the wavelength of the first light wave, δ2 (i.e., the thickness of the second light-transmitting medium layer 420) can be λ / 4 (i.e., one quarter of the wavelength of the light wave). At this time, the optical path difference between the first reflected light and the second reflected light is 1λ. Furthermore, the thickness of the second light-transmitting medium layer 420 can be one-fourth of the wavelength of the light wave, so that the optical path difference between the first reflected light and the second reflected light can be a minimum even multiple of one-half of the wavelength of the light wave, thereby reducing the thickness of the second light-transmitting medium layer 420, and then being able to set as many film layer structures as possible while satisfying the thickness condition, thereby further improving the reflectivity.

[0078] As required, the thickness δ2 of the second dielectric layer 420 in the anti-reflection film 400 can be =λ / 4=(150-300)nm, that is, the thickness of the second light-transmitting dielectric layer 420 is 150nm to 300nm. Optionally, the film layer structure of the anti-reflection film 400 may include: (optical density + optical sparseness) + (optical density + optical sparseness) + ..., and the total film layer thickness of the anti-reflection film 400 ranges from 4μm to 7μm.

[0079] Optionally, the first light-transmitting medium layer 410 includes a silicon oxide film.

[0080] Optionally, the second light-transmitting medium layer 420 includes a titanium oxide film.

[0081] In some embodiments, the silicon oxide may be silicon dioxide (SiO2), which has a refractive index of about 1.45 (in the visible light range); the silicon oxide may be silicon oxynitride (SiO x N y ), the refractive index can be controlled within the range of 1.6-2.0 by controlling the nitrogen content.

[0082] In other embodiments, the titanium oxide may be titanium dioxide (TiO2), which has a refractive index of about 2.3-2.7 (in the visible light range) and high chemical stability, and can be used as a high refractive index material; the titanium oxide may be titanium suboxide (TiO x , x﹤2), the refractive index is between TiO2 and Ti, about 1.9-2.3.

[0083] When the first light-transmitting medium layer 410 and the second light-transmitting medium layer 420 are used in combination, the following can be used: (1) SiO2 (low refractive index layer) + TiO2 (high refractive index layer); (2) SiO x N y (low refractive index layer) + TiO2 (high refractive index layer); (3) SiO2 (low refractive index layer) + TiO x (High refractive index layer).

[0084] It should be noted that the greater the contrast between the high-refractive-index and low-refractive-index materials, the stronger the reflection-enhancing effect. Therefore, the combination of SiO2 and TiO2 is usually the best solution.

[0085] In some embodiments, when the third light-transmitting medium layer 510 is used for incident light waves, the third light-transmitting medium layer 510 is closer to the heating element 200 than the fourth light-transmitting medium layer 520 .

[0086] In a preferred embodiment of the present invention, the refractive index of the third light-transmitting medium layer 510 may be smaller than the refractive index of the fourth light-transmitting medium layer 520. That is, the third light-transmitting medium layer 510 is an optically sparse medium relative to the fourth light-transmitting medium layer 520, and the fourth light-transmitting medium layer 520 is an optically dense medium relative to the third light-transmitting medium layer 510.

[0087] In a preferred embodiment of the present invention, the anti-reflection film 500 may include multiple groups of film layer structures, and the multiple groups of film layer structures are stacked in sequence.

[0088] In a preferred embodiment of the present invention, the thickness of the fourth light-transmitting medium layer 520 is half of the wavelength of the second light wave.

[0089] Similar to the above analysis of the thickness of the second light-transmitting medium layer 420, the optical path difference between the third reflected light and the fourth reflected light is (δ3+δ4+δ3+δ4)-(δ3+δ3)+λ(wavelength of light wave) / 2=2δ4+λ / 2. In order to make the optical path difference between the third reflected light and the fourth reflected light an odd multiple of half the wavelength of the second light wave, δ4 (i.e., the thickness of the fourth light-transmitting medium layer 520) can be λ / 2 (i.e., half the wavelength of the light wave). At this time, the optical path difference between the third reflected light and the fourth reflected light is 3λ / 2. In addition, the thickness of the fourth light-transmitting medium layer 520 can be half the wavelength of the light wave, so that the optical path difference between the third reflected light and the fourth reflected light can be the minimum odd multiple of half the wavelength of the light wave, thereby reducing the thickness of the fourth light-transmitting medium layer 520, and then as many film layer structures as possible can be arranged under the condition of meeting the thickness, thereby further improving the transmittance.

[0090] Specifically, the thickness δ4 of the fourth light-transmitting medium layer 520 in the anti-reflection film 500 can be =λ / 2=600-1000nm, that is, the thickness of the fourth light-transmitting medium layer 520 is 600nm to 1000nm. The film structure of the anti-reflection film 500 may include: (tantalum oxide + silicon oxide) + (tantalum oxide + silicon oxide) + ... The total thickness of the anti-reflection film 500 can be 6μm to 10μm, and the transmittance is finally increased to more than 99% by superposition. The 400-600nm visible light band has low energy, and the dielectric window 300 itself has a transmittance filter of 90-92%, so this band can be ignored.

[0091] Optionally, the third light-transmitting medium layer 510 includes a silicon oxide film.

[0092] Optionally, the fourth light-transmitting medium layer 520 includes a tantalum oxide film.

[0093] In some embodiments, the silicon oxide may be silicon dioxide (SiO2), which has a refractive index of about 1.45 (in the visible light range); the silicon oxide may be silicon oxynitride (SiOx N y ), the refractive index can be controlled within the range of 1.6-2.0 by controlling the nitrogen content.

[0094] In other embodiments, the tantalum oxide may be tantalum pentoxide (Ta2O5) having a refractive index of about 2.1-2.2 (in the visible light range).

[0095] When the third light-transmitting medium layer 510 and the fourth light-transmitting medium layer 520 are used in combination, the following can be used: (1) SiO2 (low refractive index layer) + Ta2O5 (high refractive index layer); (2) SiO x N y ﹢Ta2O5.

[0096] It should be noted that the greater the contrast between the high-refractive-index and low-refractive-index materials, the stronger the reflection-enhancing effect. Therefore, the combination of SiO2 and Ta2O5 is usually the optimal solution.

[0097] The light emitted by the heating element 200 penetrates the dielectric window 300 and reaches the wafer 10. To improve the heating efficiency of the heating element 200, it is possible to ensure that the light emitted by the heating element 200 vertically passes through the dielectric window 300 and irradiates the wafer 10. Schematically, the heating element 200 includes a plurality of heating lamps, each of which includes a light source 210 and a reflection screen 220. The reflection screen 220 can be arranged on the periphery of the light source 210. Figure 8 , to reflect the light emitted by the light source 210. By controlling the angle between the reflective screen 220 and the light source 210, the light path of each heating lamp can vertically penetrate the dielectric window 300. The tungsten filament inside the light source 210 heats up and emits light of different wavelengths. The surface of the reflective screen 220 is plated with a high reflectivity metal and at the same time there is a certain angle between the reflective screen 220 and the light source 210. When the light source 210 emits light, it is reflected by the reflective screen 220 and finally enters the chamber vertically.

[0098] In the semiconductor heat treatment equipment, the halogen lamp 2 is usually fixed on the chamber 1 by means of a mounting cooling member 12, wherein the mounting cooling member 12 comprises a mounting seat 14 and a cooling honeycomb 3 disposed inside the mounting seat 14. Figure 3 and Figure 4The cooling honeycomb 3 is usually composed of uniformly arranged small channels or holes formed on the mounting seat 14. The mounting seat 14 is provided with a water inlet 15 for the cooling medium to flow in and a water outlet 16 for the cooling medium to flow out. When the cooling medium flows into the cavity 13 inside the mounting seat 14, it will contact with the cooling honeycomb 3 and exchange heat. Since the channels of the cooling honeycomb 3 are closely arranged, regular in shape, and have a high porosity, the cooling medium can be effectively guided to flow. When the cooling medium (usually nitrogen or air) passes through, it takes away the surrounding heat, thereby cooling the mounting seat 14 and the multiple halogen lamps 2. However, since the 600-1200nm light is reflected back to the mounting seat 14, the reflected energy will cause the temperature of the mounting seat 14 to be too high, so the above structure needs to be further optimized to dissipate the excess energy.

[0099] See also Figure 12 to Figure 14 The process chamber further includes a mounting base 850 for mounting the heating element 200, and a cooling pipe for the cooling medium to flow is formed inside the mounting base 850. The cooling pipe includes a first pipe 860, a multi-layer second pipe arranged in parallel to the thickness direction of the medium window 300, an inlet pipe 820 and an outlet pipe 830. The first pipe 860 is arranged on the outer periphery of the multi-layer second pipe along the circumference of the mounting base 850, wherein the shape of the first pipe 860 can be annular or similar to annular, so as to surround the outer periphery of the multi-layer second pipe. The inlet pipe 820 is connected to the inlet of the first pipe 860, and the outlet pipe 830 is connected to the outlet of the first pipe 860, and the cooling medium flows in from the inlet pipe 820 and flows out from the outlet pipe 830. Each layer of the second pipe includes a plurality of sub-pipes 840 arranged along the first direction x, each sub-pipe 840 is extended along the second direction y, and both ends of each sub-pipe 840 are connected to the first pipe 860. Among them, the first direction x, the second direction y and the thickness direction of the medium window 300 are perpendicular to each other. A plurality of rows of porous structures are formed inside the mounting base 850, and each row of porous structures includes a plurality of mounting holes 870 sequentially distributed along the second direction y, and the axis of each mounting hole 870 is parallel to the thickness direction of the dielectric window 300. A heating lamp of the heating element 200 (the heating element 200 includes a plurality of heating lamps) can be mounted in each mounting hole 870, and a row of porous structures is arranged between each two adjacent sub-pipes 840 to improve the cooling effect of each heating lamp.

[0100] Specifically, a cooling cavity 810 is formed inside the mounting base 850. The cooling cavity 810 is located above the cooling pipe along the thickness direction of the medium window 300. The cooling cavity 810 can be used to form the above-mentioned cooling honeycomb 3. The cooling cavity 810 is connected to the inlet pipe 820 and the outlet pipe 830. That is, when the cooling medium flows from the inlet pipe 820 into the mounting base 850, it is divided into two streams that flow to the cooling cavity 810 and the first pipe 860 respectively, and then converge to the outlet pipe 830.

[0101] The embodiment of the present invention ensures that the temperature near the heating element 200 is within a controllable range by increasing the heat exchange area between the cooling medium and the mounting base 850, thereby avoiding local overheating that causes equipment performance degradation and improving the stability of the equipment in switching between high-temperature and low-temperature processes. At the same time, it can also reduce the damage to the heating element 200 and surrounding components (such as the mounting base 850) caused by high temperature, thereby extending the service life of the equipment.

[0102] As a second aspect of the present invention, a semiconductor heat treatment device is also provided, comprising the above process chamber. The semiconductor heat treatment device also comprises a reflector 700 and a cooling system, the specific functions and positions of which are well known in the art and will not be described in detail here.

[0103] In the embodiment of the present invention, an anti-reflection film 400 is arranged on the dielectric window 300, and the anti-reflection film 500 can increase the reflectivity of the first light wave, which means that most of the first light wave with greater energy is reflected back to the heating element 200, and a large amount of the first light wave is prevented from irradiating the wafer 10 through the dielectric window 300, so that the current ultra-low temperature process capability can be achieved. An anti-reflection film 500 is arranged on the dielectric window 300, and the anti-reflection film 500 can increase the transmittance of the second light wave, which means that most of the second light wave with less energy is introduced into the wafer 10 through the dielectric window 300 to heat the wafer 10. The semiconductor heat treatment equipment of the embodiment of the present invention sets an anti-reflection film 400 and an anti-reflection film 500 on the dielectric window 300 to filter out short-wavelength light to reduce heat load, and transmits long wavelength light for thermal radiation transfer, so as to provide heat to the wafer 10 while filtering out light waves with excessive heat, thereby achieving ultra-low temperature process capability; and when the embodiment of the present invention is used in the dielectric window of the RTP equipment, the heating temperature can be controlled without reducing the number of heating lamps (that is, without reducing the number of temperature intervals), thereby ensuring the number of temperature intervals of the RTP equipment and making the temperature control more stable.

[0104] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0105] In the description of the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0106] In the description of this specification, the description with reference to the terms "one embodiment", "certain embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0107] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A process chamber, characterized in that: It comprises a heating element and a dielectric window, wherein the heating element is arranged on the outside of the dielectric window and is used to radiate light waves through the dielectric window to the inside of the dielectric window; Among them, an anti-reflection film and an anti-reflection film are sequentially arranged on the dielectric window along its thickness direction, the anti-reflection film is used to increase the reflectivity of a first light wave with a wavelength within a first wavelength range, and the anti-reflection film is used to increase the transmittance of a second light wave with a wavelength within a second wavelength range, and the maximum value of the first wavelength range is less than or equal to the minimum value of the second wavelength range.

2. The process chamber according to claim 1, characterized in that: The first wavelength range is from 600nm to 1200nm, and the second wavelength range is from 1200nm to 2000nm.

3. The process chamber according to claim 1, characterized in that: The anti-reflection film comprises at least one group of film layer structures, each of which comprises a first light-transmitting medium layer and a second light-transmitting medium layer stacked, and the refractive index of the first light-transmitting medium layer is different from the refractive index of the second light-transmitting medium layer; The first light-transmitting medium layer is used to reflect the first light wave to generate a first reflected light, and the second light-transmitting medium layer is used to reflect the first light wave to generate a second reflected light; The thickness of the second light-transmitting medium layer is such that the optical path difference between the first reflected light and the second reflected light is an even multiple of half the wavelength of the first light wave.

4. The process chamber according to claim 3, characterized in that: The thickness of the second light-transmitting medium layer is one quarter of the wavelength of the first light wave.

5. The process chamber according to claim 3, characterized in that: The thickness of the second light-transmitting medium layer is 150 nm to 300 nm.

6. The process chamber according to claim 3, characterized in that: The first light-transmitting medium layer includes a silicon oxide film.

7. The process chamber according to claim 3, characterized in that: The second light-transmitting medium layer includes a titanium oxide thin film.

8. The process chamber according to claim 1, characterized in that: The antireflection film comprises at least one group of film layer structures, each of which comprises a third light-transmitting medium layer and a fourth light-transmitting medium layer which are stacked, and the refractive index of the third light-transmitting medium layer is different from the refractive index of the fourth light-transmitting medium layer; The third light-transmitting medium layer is used to reflect the second light wave to generate third reflected light, and the fourth light-transmitting medium layer is used to reflect the second light wave to generate fourth reflected light; The thickness of the fourth light-transmitting medium layer is such that the optical path difference between the third reflected light and the fourth reflected light is an odd multiple of half the wavelength of the second light wave.

9. The process chamber according to claim 8, characterized in that: The thickness of the fourth light-transmitting medium layer is half of the wavelength of the second light wave.

10. The process chamber according to claim 8, characterized in that: The thickness of the fourth light-transmitting medium layer is 600nm to 1000nm.

11. The process chamber according to claim 8, characterized in that: The third light-transmitting medium layer includes a silicon oxide film.

12. The process chamber according to claim 8, characterized in that: The fourth light-transmitting medium layer includes a tantalum oxide film.

13. The process chamber according to claim 1, characterized in that: The process chamber further comprises a mounting base for mounting the heating element, a cooling pipeline for cooling medium to flow is formed inside the mounting base, the cooling pipeline comprises a first pipeline, a plurality of second pipelines arranged in parallel to the thickness direction of the medium window, an inlet pipeline and an outlet pipeline, the first pipeline is arranged on the outer periphery of the plurality of second pipelines along the circumference of the mounting base, the inlet pipeline is connected to the inlet of the first pipeline, and the outlet pipeline is connected to the outlet of the first pipeline; Each layer of the second pipeline includes a plurality of sub-pipes arranged along the first direction, each of the sub-pipes is extended along the second direction, and both ends of each of the sub-pipes are connected to the first pipeline; the first direction, the second direction and the thickness direction of the medium window are perpendicular to each other; A plurality of rows of porous structures are formed inside the mounting base, each row of porous structures includes a plurality of mounting holes distributed in sequence along the second direction, a heating lamp of the heating element can be installed in each mounting hole, and a row of porous structures is arranged between each two adjacent sub-pipes.

14. A semiconductor heat treatment device, characterized in that: A process chamber comprising any one of claims 1 to 13.

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