A quantum dot detector and a method for manufacturing a quantum dot detector
By setting a hydrophilic WOx layer on the C60 surface of the quantum dot detector and using a method of alternating deposition of H2O and Sn sources, the uniformity and compactness of the n-type electron transport layer in the quantum dot detector were solved, thereby improving the detection performance and stability.
Patent Information
- Application Number
- CN202510031569.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-09
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2045-01-09
AI Technical Summary
When existing quantum dot detectors deposit atomic layers on the C60 surface, water cannot be evenly and densely distributed, resulting in low quality of the n-type electron transport layer, which affects detection performance and stability.
A hydrophilic layer material WOx was deposited on the C60 surface, and the uniformity and density of the n-type electron transport layer were improved by cyclically depositing H2O and Sn source. SnO2 thin films were prepared by atomic layer deposition.
This improved the quality and detection performance of the n-type electron transport layer, enhanced the stability of the device, suppressed halide ion migration, and improved the overall performance of the detector.
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Figure CN119815973B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of infrared detection technology, and in particular to a quantum dot detector and a method for fabricating the quantum dot detector. Background Technology
[0002] Infrared light is a form of electromagnetic radiation, ubiquitous in both natural and artificial environments. Infrared imaging technology holds great potential for application in emerging fields such as intelligent sensing, machine vision, and autonomous driving. However, infrared light cannot be directly perceived by the naked eye. Therefore, infrared photodetectors were invented to detect infrared light, with photoactive materials playing a crucial role in this process, typically semiconductor materials. Commercial infrared photodetectors are usually made from traditional narrow-bandgap bulk inorganic semiconductors (such as InSb, Ge, HgCdTe, and InGaAs). However, bulk semiconductor materials are quite limited. First, they are typically grown under extreme temperature and vacuum conditions, resulting in high costs. Second, the commonly used epitaxial growth method involves epitaxial growth on lattice-matched crystal substrates, making this type of infrared photodetector expensive, inflexible, and restrictive. Therefore, there is an urgent need for alternative infrared detector materials that are small in size, have low dark current, and low power consumption.
[0003] Compared with traditional bulk semiconductors, infrared quantum dots have advantages such as ease of processing, good flexibility and photostability, and high absorption coefficient. Colloidal photodetectors, with their advantages of tunable corresponding bands, excellent detection performance, low price, and process compatibility, have shown great potential to replace silicon-based pixel arrays and achieve full coverage imaging in the short-wave infrared band.
[0004] However, existing quantum dot detectors have atomic layers deposited in C... 60 On the surface, the best known quality is achieved by depositing the tin source first, followed by the water source, but C 60 The material is hydrophobic, which means the water source cannot be evenly and densely distributed on C. 60 The surface defects can lead to low SnOx deposition quality in the first few (ten) cycles, and the resulting defects affect the overall quality of the electron transport layer, thus negatively impacting the detector's detection performance.
[0005] Application content
[0006] In view of the above problems, this application provides a quantum dot detector and a method for fabricating the quantum dot detector. Improving the quality of the n-type electron transport layer enhances the overall detection performance of the detector and improves device stability.
[0007] Firstly, a method for fabricating a quantum dot detector is provided, comprising:
[0008] Provide substrate;
[0009] A bottom electrode, an electron blocking layer, a P-type hole transport layer, a light-absorbing layer, and a sacrificial layer are sequentially fabricated on the substrate.
[0010] A hydrophilic layer is prepared on the surface of the sacrificial layer away from the substrate; the hydrophilic layer material is WOx.
[0011] An n-type electron transport layer is prepared on the surface of the hydrophilic layer away from the sacrificial layer. The hydrophilic layer is used to improve the uniformity and density of the n-type electron transport layer.
[0012] A top electrode is fabricated on the surface of the n-type electron transport layer away from the hydrophilic layer.
[0013] In one embodiment, the fabrication of an n-type electron transport layer on the surface of the hydrophilic layer away from the sacrificial layer includes:
[0014] The n-type electron transport layer is prepared by cyclically depositing H2O and Sn sources on the hydrophilic layer.
[0015] In one embodiment, the hydrophilic layer material is WO3.
[0016] In one embodiment, a hydrophilic layer is formed on the surface of the sacrificial layer away from the substrate, comprising:
[0017] A WOx thin film is prepared on the side of the sacrificial layer away from the substrate by heating a tungsten boat using thermal evaporation.
[0018] The thermal evaporation rate is 0.001-0.003 nm / s, and the thickness of the WOx film is 1-1.5 nm.
[0019] In one embodiment, a tungsten boat is heated by thermal evaporation to prepare a WOx thin film on the surface of the sacrificial layer away from the substrate, followed by:
[0020] The WOx film was subjected to plasma cleaning.
[0021] In one embodiment, the n-type electron transport layer is prepared by cyclically depositing H2O and Sn sources on the hydrophilic layer, comprising:
[0022] The n-type electron transport layer is prepared by atomic layer deposition, using TDMASn (tetra(dimethylamino)tin) as the Sn source, and alternatingly depositing H2O and Sn source on the hydrophilic layer to obtain a SnO2 thin film.
[0023] In one embodiment, the bottom electrode and the top electrode are made of ITO;
[0024] The electron blocking layer is made of NiO. X ;
[0025] The material of the P-type hole transport layer is PbS-EDT;
[0026] The material of the light-absorbing layer is PbS-I / Br;
[0027] The material of the sacrificial layer is C. 60 .
[0028] Secondly, this application provides a quantum dot detector, which, from bottom to top, comprises: a bottom electrode, an electron blocking layer, a P-type hole transport layer, a light-absorbing layer, a sacrificial layer, a hydrophilic layer, an n-type electron transport layer, and a top electrode.
[0029] The hydrophilic layer material is WOx, which is used to improve the uniformity and density of the n-type electron transport layer.
[0030] In one embodiment, the hydrophilic layer material is WO3.
[0031] In one embodiment, the bottom electrode and the top electrode are made of ITO;
[0032] The electron blocking layer is made of NiO. X ;
[0033] The material of the P-type hole transport layer is PbS-EDT;
[0034] The material of the light-absorbing layer is PbS-I / Br;
[0035] The material of the sacrificial layer is C. 60 .
[0036] The scheme in this application uses the sacrificial layer C. 60 A hydrophilic layer made of WOx is deposited on the surface, and then H2O and Sn sources are deposited alternately on the hydrophilic layer (H2O is deposited first). After the water source is deposited on the hydrophilic layer, the water contact angle will be greatly reduced (according to experimental results, the water contact angle is 6°). This will improve the uniformity and density of the atomic layer deposition film, thereby improving the quality of the n-type electron transport layer and improving the overall detection performance of the detector.
[0037] In addition, a hydrophilic layer is added, made of WOx, which is highly hydrophilic and has a large number of hydroxyl groups on its surface. This facilitates the deposition and compaction of water, and the deposited film maintains high uniformity and density throughout the entire cycle, effectively improving the transmission performance of the electron transport layer and thus enhancing the device's detection performance. Furthermore, the introduction of the tungsten oxide interface layer and the improvement of the electron transport layer quality can, to some extent, suppress the migration of halide ions (I-), thereby improving device stability.
[0038] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description
[0039] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:
[0040] Figure 1 This is a schematic flowchart of an embodiment of the method for fabricating the quantum dot detector of this application;
[0041] Figure 2a This is a schematic diagram showing the contact angle of water after deposition during the atomic layer deposition process when preparing an n-type electron transport layer without a hydrophilic layer.
[0042] Figure 2b This is a schematic diagram of the contact angle of water after the deposition of water source during the atomic layer deposition process when setting up a hydrophilic layer in this application to prepare an n-type electron transport layer;
[0043] Figure 3 This is a schematic diagram of the structure of one embodiment of the quantum dot detector of this application. Detailed Implementation
[0044] Exemplary embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.
[0045] The accompanying drawings illustrate various structural schematics according to embodiments of the present disclosure. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.
[0046] The quantum dot detector of this application will be described in detail below with reference to the accompanying drawings.
[0047] Please see Figure 1 , Figure 1 This is a schematic flowchart of an embodiment of the method for fabricating a quantum dot detector according to this application, characterized in that it includes:
[0048] Step S11: Provide a substrate.
[0049] The substrate material can be a glass substrate.
[0050] Step S12: Sequentially fabricate a bottom electrode, an electron blocking layer, a P-type hole transport layer, a light-absorbing layer, and a sacrificial layer on the substrate.
[0051] In one embodiment, the bottom electrode layer material is indium tin oxide (ITO). Specifically, an ITO thin film is sputtered onto a substrate using magnetron sputtering, and then patterned using laser etching / photolithography / nanoimprint lithography to form the bottom electrode. After the bottom electrode is prepared, the bottom electrode layer can be further cleaned, for example, sequentially using pure water, ethanol, and N,N-dimethylformamide (DMF) solution.
[0052] An electron blocking layer is formed on the bottom electrode. The electron blocking layer is made of NiOx. The electron blocking layer is prepared by vacuum magnetron sputtering of a NiO target for Li on the bottom electrode layer. Specifically, the target-substrate distance is set to 80 cm, radio frequency sputtering is used, argon gas is introduced to maintain a chamber pressure of approximately 2.0 Pa, the sputtering power is 100-200 W, and the sputtering time is 3-20 min, resulting in a NiOx film with a thickness of approximately 20 nm, thus forming the electron blocking layer.
[0053] A P-type hole transport layer is formed on the electron blocking layer. The P-type layer material is PbS, specifically PbS-EDT (ethylene dithiol ligand passivated PbS). In one embodiment, the operation is carried out in a fume hood. PbS CQD (colloidal quantum dots) with an absorption peak of 880 nm is dissolved in n-octane to prepare a quantum dot solution of 40 mg / ml. EDT solution is dispersed in acetonitrile to prepare a ligand solution with an EDT mass fraction of 0.01%. Using solid-phase exchange, a layer of quantum dot solution is first spin-coated (spin-coating speed of 2500-5000 r / min, for example 4000 r / min, spin-coating acceleration of 500-2000 r / s, spin-coating time of 10-30 s, for example 20 s). Then, the ligand solution is dropped onto the quantum dot solution film and left to stand for 30 s to allow the ligand exchange to complete. The surface is then washed twice with acetonitrile to obtain a PbS-EDT film with a thickness of about 20 nm, thereby obtaining a P-type hole transport layer.
[0054] A light-absorbing layer is fabricated on the P-type hole transport layer. The light-absorbing layer material is PbS-I / Br (halogen ion passivated PbS). Specific methods for fabricating the light-absorbing layer include:
[0055] 1) The PbS colloidal quantum dots used to prepare the light-absorbing layer of the photodetector are synthesized via a cation exchange method. Specifically, zinc sulfide quantum dots are first synthesized using thioacetamide as the sulfur source and zinc stearate as the zinc source. Then, lead chloride is used as the lead source for cation exchange, and the absorption peak of the PbS CQDs is controlled by adjusting the reaction time. The PbS CQDs synthesized using this method are encapsulated by oleic acid ligands, resulting in excessively large spacing between the quantum dots and low mobility. Therefore, ligand exchange is necessary to replace the long-chain oleic acid ligands with short-chain iodine and bromine single-atom ligands to enhance the electrical properties of the PbS CQDs.
[0056] 2) Ligand exchange was performed in a nitrogen-atmospheric glove box. Specifically, PbSCQD synthesized via cation exchange was dissolved in n-octane at a concentration of 10 mg / ml to obtain a quantum dot solution. Solid PbI2 and PbBr2 reagents were weighed using a balance and mixed with N,N-dimethylformamide (DMF) solution, then thoroughly shaken to dissolve, preparing ligand solutions with PbI2 and PbBr2 concentrations of 0.0267 mmol / ml and 0.0115 mmol / ml, respectively. The quantum dot solution and ligand solution were filtered and mixed at a volume ratio of 1:1 using a syringe and a 0.22 μm filter. After thorough shaking, ligand exchange was performed. After standing, the PbSCQD with iodine and bromine atom ligands was in the lower polar DMF phase, while the upper n-octane solvent became transparent. The upper solution was then removed. To reduce the residual oleic acid content, an equal amount of n-octane was added, and the mixture was shaken and washed. After separation, the upper layer was removed, and the washing process was repeated twice. Finally, the lower layer of DMF solution containing PbS CQD was aliquoted into centrifuge tubes and centrifuged at 9000 rpm for 3 minutes. After centrifugation, the solution was removed, and the residual precipitate was PbS CQD encapsulated by iodine and bromine atom ligands. This precipitate was then placed in a low-pressure drying oven to further remove residual solvent for later use.
[0057] 3) The dried PbS CQD quantum dot solid was added to an existing quaternary dispersion system (DMF:DMSO:BTA:3-pyridinemethylamine = 350ul:250ul:370ul:30ul) with a concentration of 400mg / ml. After thorough shaking and dispersion, a film was coated at 2500r / min for 40s to obtain a PbS-I / Br film with a thickness of about 250nm, thus preparing a light-absorbing layer.
[0058] A sacrificial layer is prepared on the light-absorbing layer, and the material of the sacrificial layer is C. 60The device with the light-absorbing layer was placed on a thermal evaporation apparatus, and a film was deposited using thermal evaporation, with the film heated by a tungsten boat. 60 Maintaining an evaporation rate of 0.005–0.015 nm / s, C layers approximately 10–40 nm thick (e.g., 15 nm) were prepared. 60 The sacrificial layer was prepared.
[0059] Step S13: Prepare a hydrophilic layer on the side of the sacrificial layer away from the substrate; the hydrophilic layer material is WOx.
[0060] In one embodiment, a tungsten boat is heated by thermal evaporation to prepare a WOx film on the surface of the sacrificial layer away from the substrate; wherein the thermal evaporation rate is 0.001-0.003 nm / s, and the thickness of the WOx film is 1-1.5 nm. Furthermore, plasma cleaning of the WOx film can further improve its hydroxylation level.
[0061] In one embodiment, the hydrophilic layer material is WO3.
[0062] Step S14: An n-type electron transport layer is prepared on the surface of the hydrophilic layer away from the sacrificial layer. The hydrophilic layer is used to improve the uniformity and density of the n-type electron transport layer.
[0063] The n-type electron transport layer is prepared by cyclically depositing H2O and Sn sources on the hydrophilic layer. Specifically, atomic layer deposition (ALD) is used, with TDMASn (tetra(dimethylamino)tin) as the Sn source. H2O and Sn sources are cyclically deposited alternately on the hydrophilic layer to obtain a SnO2 thin film, thereby preparing the n-type electron transport layer. During ALD, the tin source temperature is set to 60°C and the substrate temperature to 90°C to ensure a sufficient reaction. After 250 cycles, a SnO2 thin film with a thickness of approximately 40 nm is obtained, thus yielding the n-type electron transport layer.
[0064] Please combine Figures 2a-2b Experiments have shown that the sacrificial layer C 60 As a hydrophobic material, during atomic layer deposition, H2O and Sn sources are deposited alternately in a cycle (H2O is deposited first) on C. 60 This will result in the water source not being evenly and densely distributed on C. 60 On the surface, such as Figure 2a As shown, water is deposited at C 60 When water is deposited on a surface, a large contact angle is generated (according to experimental results, the contact angle of water is 91.8°). This leads to a low quality of the final deposited n-type electron transport layer, and the resulting defects affect the overall quality of the n-type electron transport layer, thus negatively impacting the detector's detection performance. The scheme in this application uses a sacrificial layer C... 60A hydrophilic layer of WOx material is deposited on the surface, and then H2O and Sn sources are deposited alternately on the hydrophilic layer (H2O is deposited first), as follows. Figure 2b As shown, after water is deposited on the hydrophilic layer, the water contact angle is greatly reduced (according to experimental results, the water contact angle is 6°). This will improve the uniformity and density of the atomic layer deposition film, thereby improving the quality of the n-type electron transport layer and enhancing the overall detection performance of the detector.
[0065] In addition, a hydrophilic layer is added, made of WOx, which is highly hydrophilic and has a large number of hydroxyl groups on its surface. This facilitates the deposition and compaction of water, and the deposited film maintains high uniformity and density throughout the entire cycle, effectively improving the transmission performance of the electron transport layer and thus enhancing the device's detection performance. Furthermore, the introduction of the tungsten oxide interface layer and the improvement of the electron transport layer quality can, to some extent, suppress the migration of halide ions (I-), thereby improving device stability.
[0066] Step S15: Prepare a top electrode on the surface of the n-type electron transport layer away from the hydrophilic layer.
[0067] The top electrode is made of indium tin oxide (ITO). The top electrode is deposited using magnetron sputtering, with an indium-doped tin oxide target. The sputtering power is between 100W and 200W, and the sputtering time is between 10 and 30 minutes.
[0068] Please see Figure 3 , Figure 3 This is a schematic diagram of the structure of an embodiment of the quantum dot detector of this application. The quantum dot detector specifically includes, from bottom to top, a bottom electrode 111, an electron blocking layer 112, a p-type hole transport layer 113, a light-absorbing layer 114, a sacrificial layer 115, a hydrophilic layer 118, an n-type electron transport layer 116, and a top electrode 117. The electron blocking layer 112 is disposed on the bottom electrode 111; the p-type hole transport layer 113 is disposed on the side of the electron blocking layer 112 away from the bottom electrode 111; the light-absorbing layer 114 is disposed on the side of the p-type hole transport layer 113 away from the bottom electrode 111; the sacrificial layer 115 is disposed on the side of the light-absorbing layer 114 away from the bottom electrode 111; the n-type electron transport layer 116 is disposed on the side of the sacrificial layer 115 away from the bottom electrode 111; and the top electrode 117 is disposed on the side of the n-type electron transport layer 116 away from the bottom electrode 111.
[0069] The bottom electrode 111 is made of the same material as the top electrode 117, which is an indium tin oxide thin film.
[0070] The material of the n-type electron transport layer 116 is SnO2.
[0071] The material of the sacrificial layer 115 is C.60 .
[0072] The material of the P-type hole transport layer is PbS-EDT (ethylene dithiol ligand passivated PbS).
[0073] The light-absorbing layer 114 is made of PbS-I / Br (halogen ion passivated PbS), which can absorb photon energy and generate optical signals under 1550nm light irradiation. An electron blocking layer 112, a p-type hole transport layer 113, a light-absorbing layer 114, a sacrificial layer 115, and an n-type electron transport layer 116 form an ohmic contact between the bottom electrode 111 and the top electrode 117. The electron blocking layer 112, p-type hole transport layer 113, light-absorbing layer 114, sacrificial layer 115, and n-type electron transport layer 116 together form a pin structure. Under 1550nm light irradiation, the light-absorbing layer 114 generates electrons and vacancies; electrons travel along the sacrificial layer 115 to the n-type electron transport layer 116; vacancies reach the p-type hole transport layer 113. The electron blocking layer 112 prevents electrons from traveling backward from the light-absorbing layer 114 to the p-type hole transport layer 113. The p-type hole transport layer 113 and the n-type electron transport layer 116 form a pn junction (light-emitting diode structure). The p-type hole transport layer 113 generates charge carriers, and as the bias voltage increases, the built-in potential of the initial built-in electric field begins to change. When the p-type hole transport layer 113 is completely depleted, the photocurrent is at its maximum. Subtracting the initial dark current from the photocurrent yields the net photocurrent, and the light signal per unit area is the responsivity of 1550nm light.
[0074] In this application, the hydrophilic layer material is WOx, used to improve the uniformity and density of the n-type electron transport layer. Specifically, the hydrophilic layer material is WO3.
[0075] Experiments revealed that the sacrificial layer C 60 As a hydrophobic material, during atomic layer deposition, H2O and Sn sources are deposited alternately in a cycle (H2O is deposited first) on C. 60 This will result in the water source not being evenly and densely distributed on C. 60 On the surface, such as Figure 2a As shown, water is deposited at C 60 When water is deposited on a surface, a large contact angle is generated (according to experimental results, the contact angle of water is 91.8°). This leads to a low quality of the final deposited n-type electron transport layer, and the resulting defects affect the overall quality of the n-type electron transport layer, thus negatively impacting the detector's detection performance. The scheme in this application uses a sacrificial layer C... 60 A hydrophilic layer of WOx material is deposited on the surface, and then H2O and Sn sources are deposited alternately on the hydrophilic layer (H2O is deposited first), as follows. Figure 2bAs shown, after water is deposited on the hydrophilic layer, the contact angle is greatly reduced (according to experimental results, the contact angle of water is 6°). This will improve the uniformity and density of the atomic layer deposition film, thereby improving the quality of the n-type electron transport layer and enhancing the overall detection performance of the detector.
[0076] In addition, a hydrophilic layer made of WOx is incorporated, which is highly hydrophilic and facilitates the deposition and compaction of water. This maintains high uniformity and density throughout the entire circulation process, effectively enhancing the transmission performance of the electron transport layer and thus improving the device's detection performance. Furthermore, the introduction of the tungsten oxide interface layer and the improvement in the quality of the electron transport layer can, to some extent, suppress halide ion (I-) migration, thereby enhancing device stability.
[0077] The algorithms and displays provided herein are not inherently related to any particular computer, virtual system, or other device. Various general-purpose systems can also be used in conjunction with the teachings herein. The required structure for constructing such systems is apparent from the above description. Furthermore, this application is not directed to any particular programming language. It should be understood that the content of this application described herein can be implemented using various programming languages, and the above description of specific languages is for the purpose of disclosing the best mode of implementation of this application.
[0078] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.
[0079] Similarly, it should be understood that, in order to streamline this disclosure and aid in understanding one or more aspects of the various applications, in the above description of exemplary embodiments of the present application, various features of the present application are sometimes grouped together into a single embodiment, figure, or description thereof.
[0080] Those skilled in the art will understand that modules in the apparatus of the embodiments can be adaptively changed and placed in one or more apparatuses different from that embodiment. Modules, units, or components in the embodiments can be combined into a single module, unit, or component, and further, they can be divided into multiple sub-modules, sub-units, or sub-components. Except where at least some of such features and / or processes or units are mutually exclusive, any combination can be employed to combine all features disclosed in this specification (including the abstract and drawings) and all processes or units of any method or apparatus so disclosed. Unless expressly stated otherwise, each feature disclosed in this specification (including the accompanying abstract and drawings) may be replaced by an alternative feature that serves the same, equivalent, or similar purpose.
[0081] Furthermore, those skilled in the art will understand that although some embodiments herein include certain features included in other embodiments but not others, combinations of features from different embodiments are meant to be within the scope of this application and form different embodiments.
[0082] It should be noted that the above embodiments are illustrative of this application and not limiting of it. No reference numerals placed between parentheses should be construed as limiting the application. The word "comprising" does not exclude the presence of components or steps not listed in this application. The word "a" or "an" preceding a component does not exclude the presence of a plurality of such components. This application can be implemented by means of hardware comprising several different components and by means of a suitably programmed computer. In embodiments listing several means, several of these means may be embodied by the same hardware item. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names.
Claims
1. A method of fabricating a quantum dot detector, comprising: The application relates to a quantum dot detector, and relates to a preparation method of a quantum dot detector. The application provides a substrate; A bottom electrode, an electron blocking layer, a P-type hole transport layer, a light absorption layer and a sacrificial layer are sequentially prepared on the substrate; A hydrophilic layer is prepared on a side surface of the sacrificial layer away from the substrate; the material of the hydrophilic layer is WOx; An n-type electron transport layer is prepared on a side surface of the hydrophilic layer away from the sacrificial layer; the hydrophilic layer is used for improving the uniformity and compactness of the n-type electron transport layer; A top electrode is prepared on a side surface of the n-type electron transport layer away from the hydrophilic layer; The n-type electron transport layer is prepared on a side surface of the hydrophilic layer away from the sacrificial layer, and the method comprises the following steps: H2O and a Sn source are alternately and cyclically deposited on the hydrophilic layer, so that the n-type electron transport layer is prepared; The materials of the bottom electrode and the top electrode are ITO; The material of the electron blocking layer is NiO X ; The material of the P-type hole transport layer is PbS-EDT; The material of the light absorption layer is PbS-I / Br; The material of the sacrificial layer is C 60 ; The thickness of the WOx thin film is 1-1.5 nm.
2. The production method according to claim 1, characterized by, The material of the hydrophilic layer is WO3.
3. The preparation method according to claim 1, characterized in that, The hydrophilic layer is prepared on a side surface of the sacrificial layer away from the substrate, and the method comprises the following steps: A tungsten boat is heated by using a thermal evaporation method, and a WOx thin film is prepared on a side surface of the sacrificial layer away from the substrate; The speed of the thermal evaporation is 0.001-0.003 nm / s.
4. The production method according to claim 3, characterized by, The WOx thin film is prepared on a side surface of the sacrificial layer away from the substrate by using the thermal evaporation method, and the method further comprises the following step: The WOx thin film is subjected to plasma cleaning.
5. The preparation method according to claim 2, characterized in that, H2O and a Sn source are alternately and cyclically deposited on the hydrophilic layer, so that the n-type electron transport layer is prepared; TDMASn (tetra(dimethylamino) tin) is used as the Sn source, and H2O and the Sn source are alternately and cyclically deposited on the hydrophilic layer by using an atomic layer deposition method, so that a SnO2 thin film is obtained, and the n-type electron transport layer is prepared.
6. A quantum dot detector, comprising: The quantum dot detector comprises, from bottom to top, a bottom electrode, an electron blocking layer, a P-type hole transport layer, a light absorption layer, a sacrificial layer, a hydrophilic layer, an n-type electron transport layer and a top electrode; The material of the hydrophilic layer is WOx, and the hydrophilic layer is used for improving the uniformity and compactness of the n-type electron transport layer; The n-type electron transport layer is prepared on a side surface of the hydrophilic layer away from the sacrificial layer, and the method comprises the following steps: H2O and a Sn source are alternately and cyclically deposited on the hydrophilic layer, so that the n-type electron transport layer is prepared; The materials of the bottom electrode and the top electrode are ITO; The material of the electron blocking layer is NiO X ; The material of the P-type hole transport layer is PbS-EDT; The material of the light absorption layer is PbS-I / Br; The material of the sacrificial layer is C 60 ; The thickness of the WOx thin film is 1-1.5 nm.
7. The quantum dot probe of claim 6, wherein, The material of the hydrophilic layer is WO3.