Light emitting diode and light emitting device

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode and a light-emitting device.The light-emitting diode comprises a semiconductor laminated layer, the semiconductor laminated layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially laminated, a first electrode is connected with the first semiconductor layer, and a second electrode is connected with the second semiconductor layer; the transparent conducting layer is connected with the first electrode, the light-emitting diode is provided with a thimble area, the transparent conducting layer covers the thimble area, the first electrode is not overlapped with the thimble area, the thimble area spreads from the central point of the light-emitting diode to the side edge, and the area of the thimble area is 0.5%-30% of that of the light-emitting diode; or the ejector pin region is formed by spreading from the central point of the light emitting diode to each side edge, and the length of the longest line segment in the ejector pin region is 10-40 microns. By means of the arrangement, the problem of dead lamp abnormity caused by the ejector pin can be solved, and therefore the quality of the light-emitting diode is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a light emitting diode and a light emitting device. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor light-emitting element, usually made of semiconductors such as GaN, GaAs, GaP, GaAsP, etc., and its core is a PN junction with light-emitting characteristics. LED has the advantages of high luminous intensity, high efficiency, small size, and long service life, and is considered to be one of the most promising light sources at present. LED has been widely used in lighting, monitoring and command, high-definition broadcasting, high-end cinemas, office displays, conference interaction, virtual reality and other fields.

[0003] At present, LEDs often have abnormal dead lights, and the main reason is the failure caused by the die bonding process. Specifically, in the process of the ejector pin transferring the chip from the blue film to the pad, when the ejector pin lifts the chip, the tip of the ejector pin contacts the non-flat interface of the chip, but has a height difference or an inclined surface. The chip is unevenly stressed, resulting in internal damage, which causes dark cracks in the chip, and then the abnormal dead lights appear during the lighting process. Therefore, how to solve the abnormal dead light problem of the chip has become one of the technical problems that technicians in this field need to solve urgently.

[0004] It should be noted that the information disclosed in this background technology section is only intended to increase the understanding of the overall background of the present invention, and should not be regarded as admitting or suggesting in any form that the information constitutes the prior art known to those skilled in the art. Summary of the invention The invention provides a light emitting diode, which comprises a semiconductor stack, a first electrode, a second electrode and a transparent conductive layer.

[0005] The semiconductor stack includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked in sequence. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The transparent conductive layer is connected to the first electrode, and the material of the transparent conductive layer is different from the material of the first electrode. Among them, looking down from the top of the light-emitting diode toward the semiconductor stack, the light-emitting diode has a pin region, the transparent conductive layer covers the pin region, and the first electrode does not overlap with the pin region. The pin region refers to the region formed by extending from the center point of the light-emitting diode to the side of the light-emitting diode, and the area of ​​the pin region is between 0.5% and 30% of the area of ​​the light-emitting diode; or, the pin region refers to the region formed by extending from the center point of the light-emitting diode to the sides of the light-emitting diode, and the length of the longest line segment in the pin region is between 10 and 40 microns.

[0006] The present invention also provides a light emitting device, which adopts any of the light emitting diodes provided above.

[0007] An embodiment of the present invention provides a light emitting diode and a light emitting device, which avoids the problem that the ejector pins will hit the non-flat interface by setting a transparent conductive layer in the ejector pin area, thereby solving the problem of abnormal dead light and improving the quality of the light emitting diode.

[0008] Other features and beneficial effects of the present invention will be described in the following description, and some of the technical features and beneficial effects can be obviously derived from the description or understood by implementing the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief introduction is given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, some of the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0010] Figure 1A is a schematic structural diagram of a light emitting diode provided by a first embodiment of the present invention; Figure 1B is a schematic cross-sectional structure diagram of a light emitting diode provided in a first embodiment of the present invention; Figure 2A is a schematic diagram of a conventional light emitting diode; Figure 2B This is a schematic diagram of defects of a conventional light-emitting diode; Figure 2C It is a schematic diagram of the structure of a traditional light emitting diode; Figure 3 is a schematic structural diagram of a light emitting diode provided by a second embodiment of the present invention; Figure 4A is a schematic structural diagram of a light emitting diode provided in a third embodiment of the present invention; Figure 4B is a schematic cross-sectional structure diagram of a light emitting diode provided in a third embodiment of the present invention; Figure 5 It is a schematic structural diagram of a light emitting diode provided in the fourth embodiment of the present invention.

[0011] Reference numerals: 10-semiconductor stack; 101-first semiconductor layer; 102-light-emitting layer; 103-second semiconductor layer; 12-first electrode; 121-starting electrode; 122-extending electrode; 14-second electrode; 141-first end; 142-second end; 16-transparent conductive layer; 161-third opening; 18-top pin area; 20-insulating layer; 201-first opening; 202-second opening; 22-first soldering pad; 24-second soldering pad; 50-substrate; M-center point; L1-first center line; L2-second center line. DETAILED DESCRIPTION

[0012] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments; the technical features designed in different implementation modes of the present invention described below can be combined with each other as long as they do not conflict with each other; based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0013] In the description of the present invention, it should be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more. In addition, the term "including" and any variation thereof all mean "at least including".

[0014] See also Figure 1A , Figure 1B , Figure 2A , Figure 2B and Figure 2C , Figure 1A is a schematic structural diagram of a light emitting diode provided by a first embodiment of the present invention, Figure 1B is a schematic cross-sectional structure diagram of a light emitting diode provided in a first embodiment of the present invention, Figure 2A is a schematic diagram of a traditional light emitting diode. Figure 2BThis is a schematic diagram of the defects of traditional light-emitting diodes. Figure 2C It is a schematic diagram of the structure of a traditional light emitting diode. Figure 1B It is along Figure 1A In order to achieve at least one of the above advantages or other advantages, the first embodiment of the present invention provides a light emitting diode. As shown in the figure, the light emitting diode includes a semiconductor stack 10, a first electrode 12, a second electrode 14 and a transparent conductive layer 16.

[0015] The semiconductor stack 10 is disposed on a substrate 50. The substrate 50 may be an insulating substrate. Preferably, the substrate 50 may be made of a transparent material or a translucent material. In the illustrated embodiment, the substrate 50 is a sapphire substrate. In some embodiments, the substrate 50 may be a patterned sapphire substrate, but the present invention is not limited thereto. The substrate 50 may also be made of a conductive material or a semiconductor material. For example, the substrate material may include at least one of silicon carbide, silicon, magnesium aluminum oxide, magnesium oxide, lithium aluminum oxide, aluminum gallium oxide, and gallium nitride.

[0016] The semiconductor stack 10 includes a first semiconductor layer 101, a light emitting layer 102, and a second semiconductor layer 103 stacked in sequence. The stacking in sequence refers to the order from top to bottom. Specifically, the second semiconductor layer 103 is arranged close to the substrate 50, the light emitting layer 102 is arranged on the second semiconductor layer 103, and the first semiconductor layer 101 is arranged on the light emitting layer 102.

[0017] The first semiconductor layer 101 may be an N-type semiconductor layer, which may provide electrons to the light-emitting layer 102 under the action of a power source, and the first semiconductor layer 101 may be doped with an n-type dopant such as Si, Ge or Sn. .

[0018] The light-emitting layer 102 may be a quantum well structure (Quantum Well, referred to as QW). In some embodiments, the light-emitting layer 102 may also be a multiple quantum well structure (Multiple Quantum Well, referred to as MQW), wherein the multiple quantum well structure includes multiple quantum well layers (Well) and multiple quantum barrier layers (Barrier) alternately arranged in a repeated manner, for example, it may be a multiple quantum well structure of GaN / AlGaN, InAlGaN / InAlGaN or InGaN / AlGaN, or it may be a quantum well structure of AlGaInP, GaAs, AlInP, InP, etc. In addition, the composition and thickness of the well layer in the light-emitting layer 102 determine the wavelength of the generated light. In order to improve the luminous efficiency of the light-emitting layer 102, it can be achieved by changing the depth of the quantum well, the number of layers, thickness and / or other characteristics of the paired quantum wells and quantum barriers in the light-emitting layer 102.

[0019] The second semiconductor layer 103 may be a p-type semiconductor layer, which may provide holes to the light-emitting layer 102 under the action of a power source. The second semiconductor layer 103 may be doped with a p-type dopant such as Mg, Zn, Ca, Sr or Ba. The second semiconductor layer 103 may be a single-layer structure or a multi-layer structure, and the multi-layer structure may have different compositions. In addition, the arrangement of the semiconductor stack 10 is not limited thereto, and other types of epitaxial structures may be selected according to actual needs.

[0020] The first electrode 12 is electrically connected to the first semiconductor layer 101. The first electrode 12 can be made of a metal material. The first electrode 12 can be a single-layer, double-layer or multi-layer structure, for example, a stacked structure such as Ti / Al, Ti / Al / Ti / Au, Ti / Al / Ni / Au, Al / Pt / Au, etc.

[0021] The second electrode 14 is electrically connected to the second semiconductor layer 103. The second electrode 14 can be made of metal material.

[0022] The transparent conductive layer 16 is connected to the first electrode 12 . Figure 1A The area where the transparent conductive layer 16 is located is indicated by hatching. The material of the transparent conductive layer 16 is different from the material of the first electrode 12. The material of the transparent conductive layer 16 includes at least one selected from the group consisting of ITO, IZO, and AZO. The material of the first electrode 12 includes at least one selected from the group consisting of Ni, Au, Ge, Pt, Ti, and Pd. In some embodiments, the thickness of the transparent conductive layer 16 can be 50 angstroms to 1000 angstroms. If the thickness is too small, such as less than 50 angstroms, it cannot play an effective current expansion role. If the thickness is too large, such as greater than 1000 angstroms, it is easy to cause the problem of low brightness. Further, the range can be 50 angstroms to 800 angstroms.

[0023] Looking down at the semiconductor stack 10 from above the light emitting diode, the light emitting diode has a pin region 18 . Figure 1A The dotted circular frame in the figure indicates the ejector region 18 as a reference. The ejector region 18 may refer to a region formed by extending from the center point M of the light-emitting diode to the side of the light-emitting diode, and the area of ​​the ejector region 18 is between 0.5% and 30% of the area of ​​the light-emitting diode. Alternatively, the ejector region 18 refers to a region formed by extending from the center point M of the light-emitting diode to the sides of the light-emitting diode, and the length of the longest line segment in the ejector region 18 is between 10 and 40 microns. For example, the ejector region 18 is a circular region with a diameter of 20 microns, or a square region with a length of 15 microns and a width of 10 microns, or an irregular pattern region, etc., but it must meet the above definition.

[0024] refer to Figure 2A , Figure 2Band Figure 2C As shown, for the sake of current expansion performance, the electrodes of traditional light-emitting diodes are provided with finger electrodes, and the finger electrodes extend toward the electrodes on the other side, overlapping with the ejector pin area 18. Subsequently, during the ejector pin operation, since the finger electrodes are unevenly bonded and have height differences, the ejector pin operation may cause uneven force on the chip, resulting in internal damage and dark cracks in the chip (refer to Figure 2A and Figure 2B In order to solve this problem, the present invention adopts the setting of removing the finger electrode of the ejector area 18, and uses a transparent conductive layer 16 to replace the finger electrode to cover the ejector area 18, and the first electrode 12 no longer overlaps with the ejector area 18. In this way, the problem of the ejector hitting the non-flat interface can be avoided, thereby solving the problem of abnormal dead light and improving the quality of the light-emitting diode. If a metal finger electrode is directly used to completely fill the ejector area 18, although the problem of the non-flat interface can be avoided, the overall voltage will be greatly increased because it is a metal electrode, and because it is too close to the second electrode 14, it will affect the current expansion performance.

[0025] At present, some practices also change the extension direction of the finger electrodes so that the finger electrodes bypass the ejector area 18. However, this practice leads to uneven current expansion and poor light uniformity, and there are difficulties in the process, especially when the chip area is small enough, such as a mini LED chip. This practice is difficult to ensure reliability. In comparison, the practice of the present invention will make the process less difficult, and the reliability of the light-emitting diode will be higher, the current expansion will be more uniform, and the anti-ESD ability will be stronger.

[0026] In addition, some practices are to set the two electrodes at the edges of the light-emitting diode respectively, so as to avoid the ejector area 18, such as the reference patent "CN112928189B-A light-emitting diode, optoelectronic module and display device". Because its N and P electrodes are not on the same normal line, its current expansion performance is poor, and the problem of abnormal core dumping will occur during chip sorting, visual inspection of film turning, transportation process, manufacturer use and other stages. The first electrode 12 and the second electrode 14 of the present invention are both set on the center line of the light-emitting diode. Specifically, looking down from the top of the light-emitting diode toward the semiconductor stack 10, the light-emitting diode has a first center line L1 and a second center line L2, the first center line L1 is perpendicular to the second center line L2, the first electrode 12 and the second electrode 14 are distributed on different sides of the first center line L1, and the second center line L2 passes through the first electrode 12 and the second electrode 14. The first center line L1 and the second center line L2 pass through the center point M of the light-emitting diode. In this way, the current expansion performance of the light-emitting diode of the present invention is better, and the problem of abnormal core dumping can be avoided.

[0027] In some embodiments, the first electrode 12 includes a starting electrode 121 and an extension electrode 122 , wherein the extension electrode 122 is connected to the starting electrode 121 and extends toward the second electrode 14 , and the extension electrode 122 can promote current expansion capability. The transparent conductive layer 16 is connected to the extension electrode 122 .

[0028] In some embodiments, when looking down from the top of the light-emitting diode toward the semiconductor stack 10, the area of ​​the transparent conductive layer 16 accounts for 8% to 95% of the area of ​​the light-emitting diode, and its current spreading performance is better. If the area of ​​the transparent conductive layer 16 is too small (such as less than 8%), it may not be able to completely cover the ejector area 18, resulting in a dead light abnormality.

[0029] The light emitting diode further includes an insulating layer 20 , a first pad 22 and a second pad 24 .

[0030] The insulating layer 20 covers the semiconductor stack 10, the first electrode 12, the second electrode 14 and the transparent conductive layer 16, and the insulating layer 20 has a first opening 201 and a second opening 202. The first opening 201 is located on the first electrode 12, and the second opening 202 is located on the second electrode 14. The insulating layer 20 has different functions according to the positions involved. For example, when the insulating layer 20 covers the sidewalls of the semiconductor stack 10, it can be used to prevent the first semiconductor layer 101 and the second semiconductor layer 103 from being electrically connected due to leakage of conductive materials, thereby reducing short circuit anomalies of the light-emitting diode, but the embodiments of the present disclosure are not limited thereto. The material of the insulating layer 20 includes a non-conductive material. The non-conductive material is preferably an inorganic material or a dielectric material. The inorganic material may include silica gel. The dielectric material includes an electrically insulating material such as aluminum oxide, silicon nitride, silicon oxide, titanium oxide, or magnesium fluoride. For example, the insulating layer 20 may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate or a combination thereof, wherein the combination may be a Bragg reflector (DBR) formed by repeatedly stacking two materials with different refractive indices.

[0031] The first pad 22 is disposed on the insulating layer 20 and electrically connected to the first electrode 12 through the first opening 201, and the second pad 24 is disposed on the insulating layer 20 and electrically connected to the second electrode 14 through the second opening 202. The first pad 22 and the second pad 24 may be metal pads, which may be formed together using the same material in the same process, and thus may have the same layer structure. In some embodiments, neither the first pad 22 nor the second pad 24 overlaps with the ejector region 18. In some embodiments, when looking down from the top of the light-emitting diode toward the semiconductor stack 10, the area of ​​the first pad 22 accounts for 12.5-25% of the area of ​​the light-emitting diode, and the area of ​​the second pad 24 accounts for 12.5-25% of the area of ​​the light-emitting diode. When looking down from the top of the light-emitting diode toward the semiconductor stack 10, neither the first pad 22 nor the second pad 24 overlaps with the ejector region 18.

[0032] In this embodiment, if Figure 1A As shown, the transparent conductive layer 16 is located between the first pad 22 and the second pad 24 to provide current spreading.

[0033] See also Figure 3 , Figure 3 is a schematic diagram of the structure of a light emitting diode provided by the second embodiment of the present invention. Figure 1A As for the light emitting diode shown, the difference of this embodiment is mainly that: when looking down from the top of the light emitting diode toward the semiconductor stack 10, part of the transparent conductive layer 16 overlaps the first pad 22 and the second pad 24. However, the present invention is not limited thereto, and part of the transparent conductive layer 16 may also overlap one of the first pad 22 or the second pad 24. Figure 3 The region where the transparent conductive layer 16 is located is indicated by hatching. This embodiment can expand the operating space of the ejector region 18, thereby further avoiding the problem that the ejector hits a non-flat interface, solving the problem of abnormal dead light, and improving the quality of the light emitting diode.

[0034] In this embodiment, the area ratio of the transparent conductive layer 16 is higher than that of the first embodiment. The area of ​​the transparent conductive layer 16 accounts for 10% to 95% of the area of ​​the light emitting diode, and the current spreading performance is better.

[0035] See also Figure 4A and Figure 4B , Figure 4A is a schematic diagram of the structure of a light emitting diode provided by a third embodiment of the present invention, Figure 4B is a schematic cross-sectional view of a light emitting diode provided in the third embodiment of the present invention. Figure 3 As for the light-emitting diode shown in FIG. 1 , the difference of this embodiment mainly lies in that: looking down from the top of the light-emitting diode toward the semiconductor stack 10, the first electrode 12 is defined to have a first end 141 close to the second pad 24 and a second end 142 away from the second pad 24. The first end 141 and the second end 142 are opposite ends of the first electrode 12, the first end 141 is close to the second pad 24, and the second end 142 is away from the second pad 24. Looking down, the projection of the transparent conductive layer 16 completely covers the projection of the first end 141 and the second end 142 of the first electrode 12, thereby further improving the current expansion performance and expanding the operating space of the ejector area 18, thereby further avoiding the problem that the ejector will hit the non-flat interface, solving the problem of abnormal dead light, and improving the quality of the light-emitting diode. In this embodiment, the transparent conductive layer 16 is arranged below the first electrode 12. Figure 4A The area where the transparent conductive layer 16 is located is indicated by hatching.

[0036] In this embodiment, the area ratio of the transparent conductive layer 16 is higher than that of the second embodiment. The area of ​​the transparent conductive layer 16 accounts for 15% to 95% of the area of ​​the light emitting diode, and the current spreading performance is better.

[0037] See also Figure 5 , Figure 5 is a schematic diagram of the structure of a light emitting diode provided by the fourth embodiment of the present invention. Figure 4A As for the light-emitting diode shown, the difference of this embodiment is mainly that: looking down from the top of the light-emitting diode toward the semiconductor stack 10, the transparent conductive layer 16 has a third opening 161, and the projection of the third opening 161 is located within the projection of the first electrode 12, exposing part of the first electrode 12. That is to say, the transparent conductive layer 16 is not filled in the third opening 161, and the first electrode 12 is directly in ohmic contact with the first semiconductor layer 101 at the third opening 161. The part of the first electrode 12 that is not at the third opening 161 is diffused by the transparent conductive layer 16, thereby forming a better ohmic contact and improving the quality of the light-emitting diode. In this embodiment, the transparent conductive layer 16 is arranged below the first electrode 12, and the third opening 161 is arranged below the first electrode 12. Optionally, the first electrode 12 is a circular electrode, the third opening 161 is a circular opening, and the diameter of the first electrode 12 is greater than the diameter of the third opening 161. Figure 5 The area where the transparent conductive layer 16 is located is indicated by hatching.

[0038] In this embodiment, the area ratio of the transparent conductive layer 16 is higher than that of the second embodiment. The area of ​​the transparent conductive layer 16 accounts for 13% to 95% of the area of ​​the light emitting diode, and the current spreading performance is better.

[0039] An embodiment of the present invention further provides a light emitting device, which may adopt the light emitting diode of any of the above embodiments.

[0040] In summary, a light-emitting diode and a light-emitting device provided by an embodiment of the present invention avoid the problem that the ejector pins will hit the non-flat interface by setting a transparent conductive layer 16 in the ejector pin area 18, thereby solving the problem of abnormal dead light and improving the quality of the light-emitting diode.

[0041] In addition, those skilled in the art should understand that, although there are many problems in the prior art, each embodiment or technical solution of the present invention can be improved in only one or several aspects, without having to solve all the technical problems listed in the prior art or background technology at the same time. Those skilled in the art should understand that the content not mentioned in a claim should not be used as a limitation on the claim.

[0042] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode, characterized in that: The light emitting diode comprises: A semiconductor stack, wherein the semiconductor stack comprises a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked in sequence; a first electrode, electrically connected to the first semiconductor layer; a second electrode, electrically connected to the second semiconductor layer; a transparent conductive layer connected to the first electrode, wherein the material of the transparent conductive layer is different from the material of the first electrode; Wherein, when looking down from the top of the light-emitting diode toward the semiconductor stack, the light-emitting diode has a top pin region, the transparent conductive layer covers the top pin region, and the first electrode does not overlap with the top pin region; The ejector region refers to a region extending from the center point of the light-emitting diode to the side of the light-emitting diode, and the area of ​​the ejector region is between 0.5% and 30% of the area of ​​the light-emitting diode; or, the ejector region refers to a region extending from the center point of the light-emitting diode to each side of the light-emitting diode, and the length of the longest line segment in the ejector region is between 10 and 40 microns.

2. The light emitting diode according to claim 1, characterized in that: The thickness of the transparent conductive layer ranges from 50 angstroms to 800 angstroms.

3. The light emitting diode according to claim 1, characterized in that: The material of the transparent conductive layer includes at least one selected from the group consisting of ITO, IZO, and AZO.

4. The light emitting diode according to claim 1, characterized in that: The material of the first electrode includes at least one selected from the group consisting of Ni, Au, Ge, Pt, Ti, and Pd.

5. The light emitting diode according to claim 1, characterized in that: The light-emitting diode also includes an insulating layer, a first pad and a second pad, the insulating layer covers the first electrode, the second electrode and the transparent conductive layer, the insulating layer has a first opening and a second opening, the first pad is arranged on the insulating layer and is electrically connected to the first electrode through the first opening, and the second pad is arranged on the insulating layer and is electrically connected to the second electrode through the second opening.

6. The light emitting diode according to claim 5, characterized in that: Looking down from above the light-emitting diode toward the semiconductor stack, the first pad and the second pad do not overlap with the ejector pin region, and the transparent conductive layer is located between the first pad and the second pad.

7. The light emitting diode according to claim 5, characterized in that: Looking down toward the semiconductor stack from above the light-emitting diode, the first pad and the second pad do not overlap with the ejector pin region, and a portion of the transparent conductive layer overlaps with the first pad and / or the second pad.

8. The light emitting diode according to claim 7, characterized in that: Looking down toward the semiconductor stack from above the light-emitting diode, it is defined that the first electrode has a first end close to the second pad and a second end away from the second pad, and the transparent conductive layer covers the first end and the second end of the first electrode.

9. The light emitting diode according to claim 8, characterized in that: Looking down toward the semiconductor stack from above the light emitting diode, the transparent conductive layer has a third opening, and the third opening is located in the first electrode.

10. The light emitting diode according to claim 5, characterized in that: Looking down from above the light-emitting diode toward the semiconductor stack, the area of ​​the first pad accounts for 12.5-25% of the area of ​​the light-emitting diode, and the area of ​​the second pad accounts for 12.5-25% of the area of ​​the light-emitting diode.

11. The light emitting diode according to claim 1, characterized in that: Looking down toward the semiconductor stack from above the light-emitting diode, the area of ​​the transparent conductive layer occupies 8% to 95% of the area of ​​the light-emitting diode.

12. The light emitting diode according to claim 1, characterized in that: Looking down toward the semiconductor stack from above the light-emitting diode, the light-emitting diode has a first center line and a second center line, the first center line is perpendicular to the second center line, the first electrode and the second electrode are distributed on different sides of the first center line, and the second center line passes through the first electrode and the second electrode.

13. The light emitting diode according to claim 12, characterized in that: The first center line and the second center line pass through a center point of the light emitting diode.

14. A light emitting device, characterized in that: The light emitting device adopts the light emitting diode according to any one of claims 1 to 13.

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