Silicon-based OLED structure for improving packaging effect and preparation method thereof

Abstract

The invention relates to the related technical field of the electronic packaging technology, in particular to a silicon-based OLED structure for improving the packaging effect and a preparation method thereof.The silicon-based OLED structure comprises a silicon wafer substrate, a middle interlayer is arranged on the upper surface of the silicon wafer substrate, a flat layer is arranged on the upper surface of the middle interlayer, and the upper surface of the flat layer is coated with a color filter layer; a protective glass cover plate is bonded to the upper surface of the color filter layer, and a cutter wheel cutting channel is formed in the surface of one side of the middle interlayer. Through the arrangement of the structure, in the PECVD film coating process, through special mask or technological parameter control, the chamfer structure is formed on the edge of the pixel definition layer, when a cutter wheel begins to cut, even if cracks appear, the cracks are prevented from continuing to the mechanism due to the arrangement of the chamfer structure, and the cutting quality of the pixel definition layer is improved. The packaging film layer is prevented from being broken during cutting and extending to the OLED display area (namely the evaporation light-emitting layer 4 area), the packaging failure caused by cutting can be effectively improved, and the service life of a display is prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field related to electronic packaging technology, and in particular to a silicon-based OLED structure for improving packaging effect and a preparation method thereof. Background Art

[0002] In the modern electronics industry, electronic packaging technology plays a vital role. As electronic products continue to develop in the direction of miniaturization, high performance and high reliability, the requirements for electronic packaging are becoming increasingly stringent. In emerging display technology fields such as silicon-based OLEDs, the requirements for packaging effects are even more special. Once improperly packaged, it will quickly lead to a decrease in luminous performance and a shortened lifespan. In addition, in the process of cutting the entire silicon wafer into a single display unit, it is easy to cause circuit damage and display area packaging failure due to the rupture of the packaging film layer. Therefore, there is a special need for a silicon-based OLED structure with improved packaging effects and a preparation method thereof.

[0003] However, the current preparation method of existing silicon-based OLEDs is: depositing organic light-emitting materials, cathode metals, thin-film encapsulation layers, color filters, and protective glass cover plates on a silicon wafer substrate with an IC driving circuit and a pixel definition layer. After completing the above processes, the entire silicon wafer will be cut into a single display unit. However, the encapsulation film layer is formed on the entire surface, and cutting will cause the encapsulation film layer to crack. If it extends to the vicinity of the display area, it will cause circuit damage and display area encapsulation failure, thereby reducing the life of the display.

[0004] Invention content

[0005] The purpose of the present invention is to provide a silicon-based OLED structure and a preparation method thereof with improved encapsulation effect in order to solve the above problems and overcome the defects of the prior art, as described in detail below.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] The present invention provides a silicon-based OLED structure with improved packaging effect, comprising a silicon wafer substrate, characterized in that: an intermediate interlayer is arranged on the upper surface of the silicon wafer substrate, a flat layer is arranged on the upper surface of the intermediate interlayer, a color filter layer is coated on the upper surface of the flat layer, a protective glass cover is bonded to the upper surface of the color filter layer, and a knife wheel cutting path is arranged on one side surface of the intermediate interlayer;

[0008] The intermediate interlayer includes a first pixel definition layer, a second pixel definition layer, a vapor-deposited light-emitting layer, a lower thin-film encapsulation layer, a middle thin-film encapsulation layer and an upper thin-film encapsulation layer. The first pixel definition layer is deposited on the upper surface of the silicon wafer substrate, the second pixel definition layer is deposited on the upper surface of the first pixel definition layer, the vapor-deposited light-emitting layer is deposited on the upper surface of the second pixel definition layer, the lower thin-film encapsulation layer is deposited on the upper surface of the vapor-deposited light-emitting layer, the middle thin-film encapsulation layer is deposited on the upper surface of the lower thin-film encapsulation layer, and the upper thin-film encapsulation layer is deposited on the upper surface of the middle thin-film encapsulation layer.

[0009] Preferably, the first pixel definition layer and the second pixel definition layer are coated with PECVD. In order to form an easy-to-cut chamfered corner structure, the two layers generally use film layers with different components. The first pixel definition layer is generally made of SiNx with a thickness of about 50 to 200 nm. The second pixel definition layer is generally made of SiOx with a thickness of about 50 to 200 nm.

[0010] Preferably, the evaporated light-emitting layer is generally composed of an organic light-emitting layer and a cathode metal material, with a thickness of 100 to 1000 nm, and its function is to provide white light.

[0011] Preferably, the lower thin film encapsulation layer, the middle thin film encapsulation layer and the upper thin film encapsulation layer are all inorganic layers, the middle thin film encapsulation layer and the upper thin film encapsulation layer are both formed by ALD, and their components are Al2O3, TiO2 or a stacked structure composed of the two, and their thickness is about 30 to 100nm; the middle thin film encapsulation layer is generally formed by PECVD coating, and its component is SiNx, and its thickness is about 100nm to 1000nm.

[0012] Preferably, the flattening layer is an organic layer, which is coated on the encapsulation layer by means of glue coating, and plays a flattening role to facilitate the subsequent coating of the color filter, and its thickness is about 1um to 10um; the color filter layer is an organic layer, which is composed of R, G, B monochrome filter materials, and its function is to form RGB pixels, and its thickness is about 0.5 to 5um.

[0013] Preferably, the protective glass cover is generally adhered to the cover glass by UV glue, and its function is to protect the display device from external mechanical damage; the entire silicon wafer is cut into individual displays by using a cutter wheel.

[0014] A silicon-based OLED structure for improving encapsulation effect, further comprising the following steps:

[0015] Step 1: Providing a silicon wafer substrate with a driving circuit;

[0016] Step 2: Deposit a layer of SiNx with a thickness of 50 to 200 nm and a layer of SiOx with a thickness of 50 to 200 nm on the silicon wafer substrate by PECVD deposition, and form pixel holes and edge chamfer structures by dry etching;

[0017] Step 3: Deposit a light-emitting layer and a cathode metal on the inorganic layer in step 2 by evaporation, with a thickness of about 100 to 1000 nm;

[0018] Step 4: Deposit an ALD+PECVD+ALD structure encapsulation film layer on the light-emitting layer and the cathode metal by ALD and PECVD, wherein ALD is a stacked structure of Al2O3, TiO2 or both with a thickness of 30 to 100 nm, and PECVD is SiNx with a thickness of 100 to 1000 nm;

[0019] Step 5: Coating an organic flat layer on the encapsulation film layer by coating, the thickness of which is 1 to 10 um;

[0020] Step 6: coating RGB color filters respectively on the organic flat layer by coating, exposing and developing;

[0021] Step 7: Use UV glue to stick the protective glass cover on the color filter to protect all the film layers below.

[0022] Step 8: Cut the wafer that has completed the above process into individual displays using a cutting wheel.

[0023] Preferably, in step 2, pixel holes and edge chamfer structures are formed by dry etching, and advanced inductively coupled plasma (ICP) etching equipment should be selected to ensure that the equipment's RF source, gas supply system, vacuum system and other components are in normal working condition, and the silicon wafer substrate deposited with SiNx and SiOx layers is carefully loaded onto the sample stage of the etching equipment to ensure that the sample is placed stably and in uniform contact with the etching gas flow.

[0024] Preferably, in step 3, when the light-emitting layer and the cathode metal are deposited by evaporation, the substrate should be placed in a high vacuum evaporation equipment chamber and evacuated to a vacuum of less than 1×10 -4 Pa. The organic material is placed in an evaporation source and heated to 150-350°C to sublime. The gaseous molecules diffuse to the surface of the substrate and condense into a luminescent layer with a thickness of 100-1000nm. The thickness can be precisely controlled by controlling the evaporation source temperature, evaporation time and the distance between the source and the substrate.

[0025] Preferably, in step 7, when the protective glass cover is pasted on the color filter using UV glue, care should be taken to ensure that the glue is evenly applied and the thickness of the UV glue is reasonably controlled. After the glue is applied, care should be taken to remove the bubbles generated during the pasting process.

[0026] The beneficial effects are:

[0027] Through the above structure setting, Figure 1 (Silicon-based OLED structure with chamfered corners) Figure 2 (Traditional silicon-based OLED structure) By comparison, it can be seen that the encapsulation film layer is thinner in the silicon-based OLED structure with a chamfered corner structure, and this structure can effectively prevent the encapsulation film layer from breaking during cutting and extending to the OLED display area (i.e., the evaporated light-emitting layer 4 area), which can effectively improve the encapsulation failure caused by cutting and increase the life of the display. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0029] Figure 1 This is a schematic diagram of the side appearance structure of the present invention;

[0030] Figure 2 This is a schematic diagram of the structure of a traditional silicon-based OLED;

[0031] Figure 3 It is a schematic diagram of the process of the present invention.

[0032] In the figure: 1. Silicon wafer substrate; 2. Intermediate layer; 201. First pixel definition layer; 202. Second pixel definition layer; 203. Evaporated light-emitting layer; 204. Lower thin-film encapsulation layer; 205. Middle thin-film encapsulation layer; 206. Upper thin-film encapsulation layer; 3. Flat layer; 4. Color filter layer; 5. Protective glass cover; 6. Knife wheel cutting path. DETAILED DESCRIPTION

[0033] To make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be described in detail below. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other implementation methods obtained by ordinary technicians in this field without making creative work belong to the scope of protection of the present invention.

[0034] Example 1

[0035] See also Figure 1-3 A silicon-based OLED structure with improved packaging effect, comprising a silicon wafer substrate 1, characterized in that: an intermediate interlayer 2 is arranged on the upper surface of the silicon wafer substrate 1, a flat layer 3 is arranged on the upper surface of the intermediate interlayer 2, a color filter layer 4 is coated on the upper surface of the flat layer 3, a protective glass cover plate 10 is bonded to the upper surface of the color filter layer 4, and a knife wheel cutting path 6 is arranged on one side surface of the intermediate interlayer 2;

[0036] The intermediate interlayer 2 includes a first pixel definition layer 201, a second pixel definition layer 202, a vapor-deposited light-emitting layer 203, a lower thin-film encapsulation layer 204, a middle thin-film encapsulation layer 205, and an upper thin-film encapsulation layer 206. The first pixel definition layer 201 is deposited on the upper surface of the silicon wafer substrate 1, the second pixel definition layer 202 is deposited on the upper surface of the first pixel definition layer 201, the vapor-deposited light-emitting layer 203 is deposited on the upper surface of the second pixel definition layer 202, the lower thin-film encapsulation layer 204 is deposited on the upper surface of the vapor-deposited light-emitting layer 203, and the lower thin-film encapsulation layer 204 is deposited on the lower surface of the lower thin-film encapsulation layer 204. A middle-layer thin film encapsulation layer 205 is deposited on the upper surface, and an upper-layer thin film encapsulation layer 206 is deposited on the upper surface of the middle-layer thin film encapsulation layer 205. Through the arrangement of the first pixel definition layer 201, the second pixel definition layer 202, the evaporated light-emitting layer 203, the lower thin film encapsulation layer 204, the middle-layer thin film encapsulation layer 205 and the upper thin film encapsulation layer 206, when in use, each layer is deposited on the silicon wafer substrate 1 in a specific order, starting from the pixel definition layer, to the light-emitting layer, and then to the multi-layer encapsulation layer. This orderly structure enables each layer to be closely connected and work together. For example, the pixel definition layer provides accurate definition of the action area for the light-emitting layer, and the encapsulation layer provides sufficient protection on the basis of the light-emitting layer completing the light-emitting function, ensuring that the entire structure can operate stably for a long time while realizing the display function.

[0037] Furthermore, the first pixel definition layer 201 and the second pixel definition layer 202 are coated with PECVD. In order to form an easy-to-cut chamfered corner structure, the two layers generally use film layers with different components. The first pixel definition layer 201 is generally made of SiNx with a thickness of about 50 to 200 nm. The second pixel definition layer 202 is generally made of SiOx with a thickness of about 50 to 200 nm. Through the arrangement of the first pixel definition layer 201 and the second pixel definition layer 202, when in use, the first pixel definition layer 201 and the second pixel definition layer 202 formed by PECVD coating can provide better cutting guidance during the cutting process due to their different compositions (SiNx and SiOx) and specific thickness (50-200 nm) design.

[0038] Furthermore, the evaporated light-emitting layer 203 is generally composed of an organic light-emitting layer and a cathode metal material, with a thickness of 100 to 1000 nm, and its function is to provide white light. Through the setting of the evaporated light-emitting layer 203, white light is essential as a basic light source when in use. It can achieve rich color display through subsequent cooperation with the color filter layer. White light can filter out red, green, and blue components in different proportions through the color filter layer, thereby combining a variety of colors to meet diverse display needs, such as displaying realistic images and videos.

[0039] Furthermore, the lower thin film encapsulation layer 204, the middle thin film encapsulation layer 205 and the upper thin film encapsulation layer 206 are all inorganic layers, and the middle thin film encapsulation layer 204 and the upper thin film encapsulation layer 206 are both formed by ALD, and their components are Al2O3, TiO2 or a stacked structure composed of the two, and their thickness is about 30 to 100nm. The middle thin film encapsulation layer 205 is generally coated by PECVD, and its component is SiNx, and its thickness is about 100nm to 1000nm. Through the arrangement of the lower thin film encapsulation layer 204, the middle thin film encapsulation layer 205 and the upper thin film encapsulation layer 206, when in use, this multi-layer encapsulation structure composed of inorganic materials can effectively block external water vapor and oxygen. Water vapor and oxygen are the key factors that cause aging and performance degradation of the organic light-emitting layer. Through multi-layer barrier, their erosion on the evaporated light-emitting layer 203 can be greatly reduced.

[0040] Furthermore, the flat layer 3 is an organic layer, which is coated on the top of the encapsulation layer by means of glue coating, and plays a flattening role, which is convenient for the subsequent coating of the color filter, and its thickness is about 1um to 10um; the color filter layer 4 is an organic layer, which is composed of R, G, B monochrome filter materials, and its function is to form RGB pixels. Its thickness is about 0.5 to 5um. Through the setting of the flat layer 3, when in use, the flat layer 3 is coated on the top of the encapsulation layer by means of glue coating, and its flattening function creates good conditions for the subsequent coating of the color filter. If there is no flat layer 3, there may be tiny unevenness on the surface of the encapsulation layer, which will cause the color filter to have uneven thickness when coated, and the flat layer 3 can fill these tiny gaps and unevenness, so that the color filter can be evenly coated on its surface, thereby ensuring the uniformity of the optical performance of the color filter.

[0041] Furthermore, the protective glass cover 5 is generally adhered to the cover glass by UV glue, and its function is to protect the display device from external mechanical damage; the entire silicon wafer is cut into individual displays by using a knife wheel, and through the setting of the protective glass cover 5, when in use, the protective glass cover 5 is adhered to the top of the device by UV glue, which can effectively prevent external mechanical damage. In daily use, the display may be subjected to various unexpected collisions, scratches, etc. Even if a sharp object contacts the display, the protective glass cover can be scratched before the internal light-emitting layer and circuit layer, thereby acting as a barrier.

[0042] Example 2

[0043] A method for preparing a silicon-based OLED with improved encapsulation effect, using a silicon-based OLED structure with improved encapsulation effect in claim 1, further comprising the following steps:

[0044] Step 1: providing a silicon wafer substrate 1 with a driving circuit;

[0045] Step 2: depositing a layer of SiNx with a thickness of 50 to 200 nm and a layer of SiOx with a thickness of 50 to 200 nm on the silicon wafer substrate 1 by PECVD deposition, and forming pixel holes and edge chamfer structures by dry etching;

[0046] When using dry etching to form pixel holes and edge chamfer structures, advanced inductively coupled plasma (ICP) etching equipment should be used to ensure that the equipment's RF source, gas supply system, vacuum system and other components are in normal working condition. The silicon wafer substrate with SiNx and SiOx layers deposited on it should be carefully loaded onto the sample stage of the etching equipment to ensure that the sample is placed stably and in uniform contact with the etching gas flow.

[0047] Step 3: Deposit a light-emitting layer and a cathode metal on the inorganic layer in step 2 by evaporation, with a thickness of about 100 to 1000 nm;

[0048] When the light-emitting layer and cathode metal are deposited by evaporation, the substrate should be placed in a high vacuum evaporation chamber and the vacuum should be evacuated to less than 1×10 -4 Pa. The organic material is placed in an evaporation source and heated to 150-350°C to sublimate it. The gaseous molecules diffuse to the surface of the substrate and condense into a 100-1000nm thick luminescent layer. The thickness is precisely controlled by controlling the evaporation source temperature, evaporation time and the distance between the source and the substrate.

[0049] Step 4: Deposit an ALD+PECVD+ALD structure encapsulation film layer on the light-emitting layer and the cathode metal by ALD and PECVD, wherein ALD is a stacked structure of Al2O3, TiO2 or both with a thickness of 30 to 100 nm, and PECVD is SiNx with a thickness of 100 to 1000 nm;

[0050] Step 5: Coating an organic flat layer on the encapsulation film layer by coating, the thickness of which is 1 to 10 um;

[0051] Step 6: coating RGB color filters respectively on the organic flat layer by coating, exposing and developing;

[0052] Step 7: Use UV glue to stick the protective glass cover on the color filter to protect all the film layers below;

[0053] When using UV glue to stick the protective glass cover on the color filter, you should ensure that the glue is evenly applied and the thickness of the UV glue needs to be reasonably controlled. After the glue is applied, be sure to remove the bubbles generated during the bonding process;

[0054] Step 8: Cut the wafer that has completed the above process into individual displays using a cutting wheel.

[0055] Working principle: During the PECVD coating process, a chamfered angle structure is formed at the edge of the pixel definition layer through special mask or process parameter control. When the cutter wheel starts cutting, since the cutter wheel cuts the other end of the chamfered angle, even if excessive vertical pressure is applied during cutting, resulting in cracks, the setting of the chamfered angle structure can prevent the cracks from extending to the mechanism itself, and prevent the rupture of the encapsulation film layer during cutting from extending to the OLED display area (i.e., the evaporated light-emitting layer 4 area), which can effectively improve the encapsulation failure caused by cutting and increase the life of the display.

[0056] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A silicon-based OLED structure with improved packaging effect, comprising a silicon wafer substrate (1), characterized in that: An intermediate interlayer (2) is provided on the upper surface of the silicon wafer substrate (1), a flat layer (3) is provided on the upper surface of the intermediate interlayer (2), a color filter layer (4) is coated on the upper surface of the flat layer (3), a protective glass cover plate (10) is bonded to the upper surface of the color filter layer (4), and a knife wheel cutting path (6) is provided on one side surface of the intermediate interlayer (2); The intermediate interlayer (2) comprises a first pixel definition layer (201), a second pixel definition layer (202), a vapor-deposited luminescent layer (203), a lower thin film encapsulation layer (204), a middle thin film encapsulation layer (205) and an upper thin film encapsulation layer (206); the first pixel definition layer (201) is deposited on the upper surface of the silicon wafer substrate (1); the second pixel definition layer (202) is deposited on the upper surface of the first pixel definition layer (201); the vapor-deposited luminescent layer (203) is deposited on the upper surface of the vapor-deposited luminescent layer (203); the lower thin film encapsulation layer (204) is deposited on the upper surface of the lower thin film encapsulation layer (204); the middle thin film encapsulation layer (205) is deposited on the upper surface of the middle thin film encapsulation layer (205); and the upper thin film encapsulation layer (206) is deposited on the upper surface of the middle thin film encapsulation layer (205).

2. The silicon-based OLED structure for improving packaging effect according to claim 1, characterized in that: The first pixel definition layer (201) and the second pixel definition layer (202) are formed by PECVD coating. In order to form an easily cut chamfered corner structure, the two layers generally use film layers with different components. The first pixel definition layer (201) is generally made of SiNx with a thickness of about 50 to 200 nm, and the second pixel definition layer (202) is generally made of SiOx with a thickness of about 50 to 200 nm.

3. The silicon-based OLED structure for improving packaging effect according to claim 1, characterized in that: The evaporated light-emitting layer (203) is generally composed of an organic light-emitting layer and a cathode metal material, with a thickness of 100 to 1000 nm, and its function is to provide white light.

4. The silicon-based OLED structure for improving packaging effect according to claim 1, characterized in that: The lower thin film encapsulation layer (204), the middle thin film encapsulation layer (205) and the upper thin film encapsulation layer (206) are all inorganic layers. The middle thin film encapsulation layer (204) and the upper thin film encapsulation layer (206) are both formed by ALD, and their components are Al2O3, TiO2 or a stacked structure composed of the two, and their thickness is about 30 to 100nm. The middle thin film encapsulation layer (205) is generally coated by PECVD, and its component is SiNx, and its thickness is about 100nm to 1000nm.

5. The silicon-based OLED structure for improving packaging effect according to claim 1, characterized in that: The flat layer (3) is an organic layer, which is coated on the packaging layer by means of glue coating, plays a flattening role, and is convenient for the subsequent coating of the color filter. The thickness of the flat layer (3) is about 1 um to 10 um. The color filter layer (4) is an organic layer, which is composed of R, G, B monochrome filter materials, and its function is to form RGB pixels. The thickness of the color filter layer (4) is about 0.5 to 5 um.

6. The silicon-based OLED structure for improving packaging effect according to claim 1, characterized in that: The protective glass cover plate (5) is generally adhered to the cover glass by UV glue, and its function is to protect the display device from external mechanical damage; the entire silicon wafer is cut into individual displays by using a cutter wheel.

7. A method for preparing a silicon-based OLED with improved encapsulation effect, characterized in that: The silicon-based OLED structure for improving encapsulation effect according to any one of claims 1 to 9 further comprises the following steps: Step 1: providing a silicon wafer substrate (1) with a driving circuit; Step 2: depositing a layer of SiNx with a thickness of 50 to 200 nm and a layer of SiOx with a thickness of 50 to 200 nm on the silicon wafer substrate (1) by PECVD deposition, and forming pixel holes and edge chamfer structures by dry etching; Step 3: Deposit a light-emitting layer and a cathode metal on the inorganic layer in step 2 by evaporation, with a thickness of about 100 to 1000 nm; Step 4: Deposit an ALD+PECVD+ALD structure encapsulation film layer on the light-emitting layer and the cathode metal by ALD and PECVD, wherein ALD is a stacked structure of Al2O3, TiO2 or both with a thickness of 30 to 100 nm, and PECVD is SiNx with a thickness of 100 to 1000 nm; Step 5: Coating an organic flat layer on the encapsulation film layer by coating, the thickness of which is 1 to 10 um; Step 6: coating RGB color filters respectively on the organic flat layer by coating, exposing and developing; Step 7: Use UV glue to stick the protective glass cover on top of the color filter to protect all the film layers below Step 8: Cut the wafer that has completed the above process into individual displays using a cutting wheel.

8. The method for preparing a silicon-based OLED with improved encapsulation effect according to claim 7, characterized in that: In step 2, pixel holes and edge chamfer structures are formed by dry etching. Advanced inductively coupled plasma (ICP) etching equipment should be used to ensure that the equipment's RF source, gas supply system, vacuum system and other components are in normal working condition. The silicon wafer substrate with SiNx and SiOx layers deposited is carefully loaded onto the sample stage of the etching equipment to ensure that the sample is placed stably and in uniform contact with the etching gas flow.

9. The method for preparing a silicon-based OLED with improved encapsulation effect according to claim 7, characterized in that: In step 3, when the light-emitting layer and the cathode metal are deposited by evaporation, the substrate should be placed in a high vacuum evaporation equipment chamber and evacuated to a vacuum of less than 1×10 -4 Pa. The organic material is placed in an evaporation source and heated to 150-350°C to sublime. The gaseous molecules diffuse to the surface of the substrate and condense into a 100-1000nm thick luminescent layer. The thickness can be precisely controlled by controlling the evaporation source temperature, evaporation time and the distance between the source and the substrate.

10. The method for preparing a silicon-based OLED with improved encapsulation effect according to claim 7, characterized in that: In step 7, when the protective glass cover is pasted on the color filter using UV glue, care should be taken to ensure that the glue is evenly applied and the thickness of the UV glue is reasonably controlled. After the glue is applied, care should be taken to remove bubbles generated during the pasting process.

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