High-reliability light emitting diode

Abstract

A high-reliability light emitting diode comprises a first type semiconductor layer, a first finger electrode, a first pad, a second type semiconductor layer, a second finger electrode and a second pad. The first finger electrode is disposed on the first type semiconductor layer. The first pad is disposed on the first type semiconductor layer and is connected to the first finger electrode. The second finger electrode is disposed on the second type semiconductor layer. The second pad is arranged on the second type semiconductor layer and is connected with the second finger electrode. Wherein the thickness of the first finger-shaped electrode is gradually reduced from the connecting surface of the first gasket and the first finger-shaped electrode to the direction far away from the first gasket.

Description

Technical Field

[0001] The invention relates to a light emitting diode, in particular to a light emitting diode with high reliability. Background Art

[0002] Light emitting diode lighting devices have many advantages such as high energy efficiency, long life, environmental protection and versatility, so they have been widely used in various buildings.

[0003] However, during the use of the existing LED lighting device, the LED driving circuit applies an excessive current to the LED chip, which not only adversely affects the light-emitting performance of the LED chip, but may also directly damage the internal structure of the chip. The above situation is usually caused by the insufficient conductivity of the finger electrodes (Finger) inside the LED chip.

[0004] Therefore, how to improve the light emitting diode to improve the above situation has become an urgent issue. Summary of the invention

[0005] According to one embodiment of the present invention, a high-reliability light-emitting diode is provided, which includes a first-type semiconductor layer, a first finger electrode, a first pad, a second-type semiconductor layer, a second finger electrode and a second pad. The first finger electrode is disposed on the first-type semiconductor layer. The first pad is disposed on the first-type semiconductor layer and connected to the first finger electrode. The second finger electrode is disposed on the second-type semiconductor layer. The second pad is disposed on the second-type semiconductor layer and connected to the second finger electrode. The thickness of the first finger electrode gradually decreases from the connection surface between the first pad and the first finger electrode to the direction away from the first pad.

[0006] In one embodiment, a top of a cross section of the first finger electrode is stepped.

[0007] In one embodiment, a top of a cross section of the first finger electrode is a curve.

[0008] In one embodiment, the curve fits a natural exponential function.

[0009] In one embodiment, the height of any point of the curve is equal to the preset height multiplied by the first adjustment value. The base of the first adjustment value is a natural constant, and the exponent of the first adjustment value is the second adjustment value multiplied by the distance between the point and the first pad.

[0010] In one embodiment, the second adjustment value is between -0.012 and -0.015.

[0011] In one embodiment, the light emitting diode further comprises a quantum well layer, wherein the first type semiconductor layer is disposed on the quantum well layer, and the quantum well layer is disposed on the second type semiconductor layer.

[0012] In one embodiment, the light emitting diode further includes a substrate, and the second type semiconductor layer is disposed on the substrate.

[0013] In one embodiment, the light emitting diode further includes a reflective layer, and the substrate is disposed on the reflective layer.

[0014] In one embodiment, the light emitting diode further comprises a composite buffer layer and a transparent conductive layer. The composite buffer layer and the transparent conductive layer are disposed between the first finger-shaped electrode and the first-type semiconductor layer. The composite buffer layer is disposed on the first-type semiconductor layer. The transparent conductive layer is disposed on the composite buffer layer. The first finger-shaped electrode is disposed on the transparent conductive layer.

[0015] As described above, the high reliability light emitting diode according to the embodiments of the present invention may have one or more of the following advantages:

[0016] (1) In one embodiment of the present invention, a light emitting diode includes a first-type semiconductor layer, a first finger electrode, a first pad, a second-type semiconductor layer, a second finger electrode and a second pad. The first finger electrode is disposed on the first-type semiconductor layer. The first pad is disposed on the first-type semiconductor layer and connected to the first finger electrode. The second finger electrode is disposed on the second-type semiconductor layer. The second pad is disposed on the second-type semiconductor layer and connected to the second finger electrode. The thickness of the first finger electrode gradually decreases from the connection surface between the first pad and the first finger electrode to the direction away from the first pad. Through the above-mentioned finger electrode structure design, the ability of the light emitting diode to resist instantaneous large current surges can be greatly improved. Therefore, the reliability of the light emitting diode can be effectively improved.

[0017] (2) In one embodiment of the present invention, the thickness of the first finger electrode of the light emitting diode gradually decreases from the connection surface between the first pad and the first finger electrode to the direction away from the first pad. For example, the top of the cross section of the first finger electrode can be curved or stepped. Through the above-mentioned finger electrode structure design, the material cost of the first finger electrode can be reduced, so that the overall cost of the light emitting diode is reduced. Therefore, the light emitting diode can be more widely used.

[0018] (3) In one embodiment of the present invention, the light emitting diode has a special finger electrode structure design. Through the above-mentioned finger electrode structure design, the impedance of one end of the first finger electrode adjacent to the input end of the light emitting diode can be greatly reduced to reduce the situation where electrical energy is converted into heat energy. Therefore, the light efficiency of the light emitting diode can also be further improved, making the light emitting diode more energy-saving and power-saving. Therefore, the light emitting diode can truly meet the needs of practical applications and can meet the trend of future development.

[0019] (4) In one embodiment of the present invention, the light emitting diode has a special finger electrode structure. The finger electrode structure design can not only greatly improve the ability of the light emitting diode to resist instantaneous large current surges, but also improve the light efficiency of the light emitting diode. Therefore, the overall performance of the light emitting diode can be improved to meet the needs of different applications.

[0020] (5) In one embodiment of the present invention, the light emitting diode has a simple design and a special finger-shaped electrode structure design, so the desired effect can be achieved without increasing the cost. Therefore, the practicality of the light emitting diode can be greatly improved, so that the light emitting diode can be applied to various light emitting diode lighting devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 FIG. 1 is a top view of a high-reliability light emitting diode according to a first embodiment of the present invention.

[0022] Figure 2 FIG. 1 is a side view of a high-reliability light emitting diode according to a first embodiment of the present invention.

[0023] Figure 3 It is a partial enlarged view of the high reliability light emitting diode according to the first embodiment of the present invention.

[0024] Figure 4 FIG. 1 is a top view of a high-reliability light emitting diode according to a second embodiment of the present invention.

[0025] Figure 5 FIG. 4 is a side view of a high-reliability light emitting diode according to a second embodiment of the present invention.

[0026] Figure 6 It is a partial enlarged view of a high-reliability light emitting diode according to the second embodiment of the present invention.

[0027] Description of reference numerals:

[0028] 1-light-emitting diode; 11A-first type semiconductor layer; 12A-first finger electrode; 13A-first pad; 11B-second type semiconductor layer; 12B-second finger electrode; 13B-second pad; 14-composite buffer layer; 15-transparent conductive layer; 16-quantum well layer; 17-substrate; 18-reflective layer; R1, R2-arrows; K1-point; T1-height; L1-distance.

[0029] The detailed features and advantages of the present invention are described in detail in the following embodiments, and the contents are sufficient to enable anyone skilled in the relevant art to understand the technical content of the present invention and implement it accordingly. Moreover, according to the contents, claims and drawings disclosed in this specification, any person skilled in the relevant art can easily understand the purposes and advantages of the present creation. DETAILED DESCRIPTION

[0030] The following will refer to the relevant drawings to illustrate the embodiments of the high reliability light emitting diode according to the present invention. For the sake of clarity and convenience of the drawings, the components in the drawings may be exaggerated or reduced in size and proportion. In the following description and / or claims, when it is mentioned that a component is "connected" or "coupled" to another component, it may be directly connected or coupled to the other component or there may be an intervening component; and when it is mentioned that a component is "directly connected" or "directly coupled" to another component, there is no intervening component. Other words used to describe the relationship between components or layers should be interpreted in the same way. For ease of understanding, the same components in the following embodiments are illustrated with the same symbols.

[0031] See also Figure 1 and Figure 2 . Figure 1 FIG. 1 is a top view of a high-reliability light emitting diode according to a first embodiment of the present invention. Figure 2 FIG. 1 is a side view of a high-reliability light emitting diode according to a first embodiment of the present invention. Figure 3 FIG. 1 is a partial enlarged view of the high reliability light emitting diode of the first embodiment of the present invention. Figure 1 and Figure 2 As shown, the light emitting diode 1 includes a first type semiconductor layer 11A, a first finger electrode 12A, a first pad 13A, a composite buffer layer 14, a transparent conductive layer 15, a quantum well layer 16, a second type semiconductor layer 11B, a second finger electrode 12B, a second pad 13B, a substrate 17 and a reflective layer 18.

[0032] The substrate 17 is disposed on the reflective layer 18. In one embodiment, the substrate 17 may be a sapphire substrate. In another embodiment, the substrate 17 may also be a substrate for other semiconductors. In this embodiment, the reflective layer 18 may be a distributed Bragg reflection (DBR) layer. In another embodiment, the reflective layer 18 may also be other layers having similar functions.

[0033] The second-type semiconductor layer 11B is disposed on the substrate 17. The second finger electrode (gold finger) 12B and the second pad 13B are disposed on the second-type semiconductor layer 11B, and the second pad 13B is connected to the second finger electrode 12B. In one embodiment, the second-type semiconductor layer 11B may be an N-type gallium nitride (N-GaN) layer. In another embodiment, the second-type semiconductor layer 11B may also be a layer with similar properties. In one embodiment, the second pad 13B may be an N-type pad (N-Pad). In another embodiment, the second pad 13B may also be other similar components. In one embodiment, the second finger electrode 12B may be a gold wire. In another embodiment, the second finger electrode 12B may also be made of other conductive materials.

[0034] The quantum well layer 16 is disposed on the second-type semiconductor layer 11B. In one embodiment, the quantum well layer 16 may be a multiple quantum well (MWQ) layer. In another embodiment, the quantum well layer 16 may be a layer having similar properties.

[0035] The first-type semiconductor layer 11A is disposed on the quantum well layer 16. The first pad 13A and the first finger electrode 12A are disposed on the first-type semiconductor layer 11A, and the first pad 13A is connected to the first finger electrode 12A. A composite buffer layer (CB layer) 14 and a transparent conductive layer (ITO layer) 15 are further provided between the first finger electrode 12A and the first-type semiconductor layer 11A. The composite buffer layer 14 is disposed on the first-type semiconductor layer 11A, and the transparent conductive layer 15 is disposed on the composite buffer layer 14. In one embodiment, the first-type semiconductor layer 11A may be a P-type gallium nitride (P-GaN) layer. In another embodiment, the first-type semiconductor layer 11A may also be a layer having similar characteristics. In one embodiment, the first pad 13A may be a P-type pad (P-Pad). In another embodiment, the first pad 13A may also be other similar components. In one embodiment, the first finger electrode 12A may be a gold wire. In another embodiment, the first finger electrodes 12A may also be made of other conductive materials.

[0036] In this embodiment, the thickness of the first finger electrode 12A gradually decreases from the connection surface between the first pad 13A and the first finger electrode 12A to the direction away from the first pad 13A (this direction is as shown in FIG. Figure 2 As shown by the arrow R1 in FIG. Figure 2 It can be seen that the top of the cross section of the first finger electrode 12A is a curve. This curve conforms to a natural exponential function. In other words, this curve can be represented by a natural exponential function, as shown in the following formula (1):

[0037] y=Ae Bx ………………(1)

[0038] Wherein, y represents the height of any point on the curve (the thickness of the first finger electrode 12A at this point); x represents the distance between any point on the curve and the first pad 13A (the shortest distance); A represents the preset height; e Bx represents the first adjustment value (e is a natural constant); B represents the second adjustment value.

[0039] That is, the height of any point of the curve is equal to the preset height multiplied by the first adjustment value. The base of the first adjustment value is a natural constant, and the exponent of the first adjustment value is the second adjustment value multiplied by the distance (shortest distance) between the point and the first pad 13A.

[0040] like Figure 3 As shown, point K1 is one of the curves. T1 is the height of point K1 (the thickness of the first finger electrode 12A at this point, which is the y value of equation (1)). L1 is the distance between point K1 and the first pad 13A (the shortest distance, which is the x value of equation (1)).

[0041] Since the first finger electrode 12A is a gold wire, the cost of the first finger electrode 12A depends on its thickness (material usage). The cost of the first finger electrode 12A can be determined by adjusting the preset height. For example, if the cost of the first finger electrode 12A is to be the same as the cost of a finger electrode with a constant thickness of 4.2 μm, the preset height can be set to 8.4 μm. The second adjustment value can be between -0.012 and -0.015. In this embodiment, the second adjustment value can be -0.014. Therefore, the above curve can be expressed by the following formula (2):

[0042] y=8.4e -0.014x ………………(2)

[0043] Thus, the cost of the first finger electrode 12A can be the same as the cost of the finger electrode with a constant thickness of 4.2 μm. In another embodiment, the preset height can be set to be lower than 8.4 μm, so that the cost of the first finger electrode 12A is lower than the cost of the finger electrode with a constant thickness of 4.2 μm.

[0044] In another embodiment, the second finger electrode 12B may also adopt the same design. The thickness of the second finger electrode 12B gradually decreases from the connection surface between the second pad 13B and the second finger electrode 12B to the direction away from the second pad 13B (this direction is as shown in FIG. Figure 2 As shown by the arrow R2 in FIG. 1 ). The top of the cross section of the second finger electrode 12B is a curve, and this curve also conforms to the above-mentioned natural exponential function. The cost of the second finger electrode 12B can be determined by adjusting the preset height.

[0045] As can be seen from the above, in this embodiment, since the thickness of the first finger electrode 12A gradually decreases from the connection surface between the first pad 13A and the first finger electrode to the direction away from the first pad 13A, the ability of the light emitting diode 1 to resist instantaneous large current surge can be greatly improved through the above finger electrode structure design. Therefore, the reliability of the light emitting diode 1 can be effectively improved.

[0046] Moreover, the top of the cross section of the first finger electrode 12A can be a curve. Through the above-mentioned finger electrode structure design, the material cost of the first finger electrode 12A can be reduced, so that the overall cost of the light emitting diode 1 is reduced. Therefore, the light emitting diode 1 can be more widely used.

[0047] In addition, through the above-mentioned finger electrode structure design, the impedance of the first finger electrode 12A adjacent to the input end of the light emitting diode 1 can be greatly reduced to reduce the situation where electrical energy is converted into heat energy. Therefore, the light efficiency of the light emitting diode 1 can also be further improved, making the light emitting diode 1 more energy-saving and power-saving. Therefore, the light emitting diode 1 can truly meet the needs of practical applications and can meet the trend of future development.

[0048] In addition, the light emitting diode 1 has a special finger electrode structure. The finger electrode structure design can not only greatly improve the ability of the light emitting diode 1 to resist instantaneous large current surges, but also improve the light efficiency of the light emitting diode 1. Therefore, the overall performance of the light emitting diode 1 can be improved to meet the needs of different applications.

[0049] Furthermore, the LED 1 has a simple design and a special finger-shaped electrode structure, so it can achieve the desired effect without increasing the cost. Therefore, the practicality of the LED 1 can be greatly improved, so that the LED 1 can be applied to various LED lighting devices.

[0050] In another embodiment, the top of the cross section of the first finger electrode 12A may also be stepped, which may also achieve a similar technical effect as that of the present embodiment.

[0051] Of course, this embodiment is only used for illustration and does not limit the scope of the present invention. Equivalent modifications or changes made to the high-reliability light-emitting diode 1 according to this embodiment should still be included in the patent scope of the present invention.

[0052] It is worth mentioning that during the use of the existing light-emitting diode 1 lighting device, the light-emitting diode 1 driving circuit applies an excessive current to the light-emitting diode 1 chip, which not only has an adverse effect on the light-emitting performance of the light-emitting diode 1 chip, but may also directly damage the internal structure of the chip. In contrast, according to an embodiment of the present invention, the light-emitting diode 1 includes a first-type semiconductor layer 11A, a first finger electrode 12A, a first pad 13A, a second-type semiconductor layer 11B, a second finger electrode 12B and a second pad 13B. The first finger electrode 12A is disposed on the first-type semiconductor layer 11A. The first pad 13A is disposed on the first-type semiconductor layer 11A and connected to the first finger electrode 12A. The second finger electrode 12B is disposed on the second-type semiconductor layer 11B. The second pad 13B is disposed on the second-type semiconductor layer 11B and connected to the second finger electrode 12B. The thickness of the first finger electrode 12A gradually decreases from the connection surface between the first pad 13A and the first finger electrode 12A to the direction away from the first pad 13A. Through the above-mentioned finger-shaped electrode structure design, the ability of the light emitting diode 1 to resist instantaneous large current surge can be greatly improved. Therefore, the reliability of the light emitting diode 1 can be effectively improved.

[0053] Furthermore, according to the embodiment of the present invention, the thickness of the first finger electrode 12A of the light emitting diode 1 gradually decreases from the connection surface between the first pad 13A and the first finger electrode 12A to the direction away from the first pad 13A. For example, the top of the cross section of the first finger electrode 12A can be curved or stepped. Through the above-mentioned finger electrode structure design, the material cost of the first finger electrode 12A can be reduced, so that the overall cost of the light emitting diode 1 is reduced. Therefore, the light emitting diode 1 can be more widely used.

[0054] In addition, according to the embodiment of the present invention, the light emitting diode 1 has a special finger electrode structure design. Through the above finger electrode structure design, the impedance of the first finger electrode 12A adjacent to the input end of the light emitting diode 1 can be greatly reduced to reduce the situation where electrical energy is converted into heat energy. Therefore, the light efficiency of the light emitting diode 1 can also be further improved, making the light emitting diode 1 more energy-saving and power-saving. Therefore, the light emitting diode 1 can indeed meet the needs of practical applications and can meet the trend of future development.

[0055] In addition, according to the embodiment of the present invention, the light emitting diode 1 has a special finger electrode structure. The above-mentioned finger electrode structure design can not only greatly improve the ability of the light emitting diode 1 to resist instantaneous large current surges, but also improve the light efficiency of the light emitting diode 1. Therefore, the overall performance of the light emitting diode 1 can be improved to meet the needs of different applications.

[0056] Furthermore, according to the embodiment of the present invention, the light emitting diode 1 has a simple design and a special finger-shaped electrode structure design, so the desired effect can be achieved without increasing the cost. Therefore, the practicality of the light emitting diode 1 can be greatly improved, so that the light emitting diode 1 can be applied to various light emitting diode 1 lighting devices. From the above, it can be seen that the high-reliability light emitting diode according to the embodiment of the present invention can indeed achieve excellent technical effects.

[0057] See also Figure 4 , Figure 5 and Figure 6 . Figure 4 FIG. 1 is a top view of a high-reliability light emitting diode according to a first embodiment of the present invention. Figure 5 FIG. 4 is a side view of a high-reliability light emitting diode according to a second embodiment of the present invention. Figure 6 FIG. 2 is a partial enlarged view of a high reliability light emitting diode according to a second embodiment of the present invention. Figure 4 and Figure 5 As shown, the light emitting diode 1 includes a first type semiconductor layer 11A, a first finger electrode 12A, a first pad 13A, a composite buffer layer 14, a transparent conductive layer 15, a quantum well layer 16, a second type semiconductor layer 11B, a second finger electrode 12B, a second pad 13B, a substrate 17 and a reflective layer 18.

[0058] The substrate 17 is disposed on the reflective layer 18. In one embodiment, the substrate 17 may be a sapphire substrate. In another embodiment, the substrate 17 may also be a substrate for other semiconductors. In this embodiment, the reflective layer 18 may be a distributed Bragg reflection (DBR) layer. In another embodiment, the reflective layer 18 may also be other layers having similar functions.

[0059] The second-type semiconductor layer 11B is disposed on the substrate 17. The second finger electrode (gold finger) 12B and the second pad 13B are disposed on the second-type semiconductor layer 11B, and the second pad 13B is connected to the second finger electrode 12B. In one embodiment, the second-type semiconductor layer 11B may be an N-type gallium nitride (N-GaN) layer. In another embodiment, the second-type semiconductor layer 11B may also be a layer with similar properties. In one embodiment, the second pad 13B may be an N-type pad. In another embodiment, the second pad 13B may also be other similar components. In one embodiment, the second finger electrode 12B may be a gold wire. In another embodiment, the second finger electrode 12B may also be made of other conductive materials.

[0060] The quantum well layer 16 is disposed on the second-type semiconductor layer 11B. In one embodiment, the quantum well layer 16 may be a multiple quantum well layer. In another embodiment, the quantum well layer 16 may be a layer with similar properties.

[0061] The first-type semiconductor layer 11A is disposed on the quantum well layer 16. The first pad 13A and the first finger electrode 12A are disposed on the first-type semiconductor layer 11A, and the first pad 13A is connected to the first finger electrode 12A. A composite buffer layer 14 and a transparent conductive layer 15 are further provided between the first finger electrode 12A and the first-type semiconductor layer 11A. The composite buffer layer 14 is disposed on the first-type semiconductor layer 11A, and the transparent conductive layer 15 is disposed on the composite buffer layer 14. In one embodiment, the first-type semiconductor layer 11A may be a P-type gallium nitride layer. In another embodiment, the first-type semiconductor layer 11A may also be a layer having similar properties. In one embodiment, the first pad 13A may be a P-type pad. In another embodiment, the first pad 13A may also be other similar components. In one embodiment, the first finger electrode 12A may be a gold wire. In another embodiment, the first finger electrode 12A may also be made of other conductive materials.

[0062] In this embodiment, the thickness of the first finger electrode 12A gradually decreases from the connection surface between the first pad 13A and the first finger electrode 12A to the direction away from the first pad 13A (this direction is as shown in FIG. Figure 4 As shown by the arrow R1 in FIG. Figure 4 It can be seen that the top of the cross section of the first finger electrode 12A is in a step shape.

[0063] like Figure 6 As shown, the cross section of the first finger electrode 12A can be divided into 4 steps. Since the first finger electrode 12A is a gold wire, the cost of the first finger electrode 12A depends on its thickness (material usage). The cost of the first finger electrode 12A can be determined by adjusting the preset height. For example, if the cost of the first finger electrode 12A is to be the same as the cost of a finger electrode with a constant thickness of 4.2 μm, the length and thickness of these steps can be adjusted so that the cross-sectional area of ​​the first finger electrode 12A is the same as the cross-sectional area of ​​a finger electrode with a constant thickness of 4.2 μm. This embodiment is only an example, and the number of these steps can be adjusted according to actual needs. The length and thickness of each step can also be adjusted according to actual needs.

[0064] In another embodiment, the second finger electrode 12B may also adopt the same design. The thickness of the second finger electrode 12B gradually decreases from the connection surface between the second pad 13B and the second finger electrode 12B to the direction away from the second pad 13B (this direction is as shown in FIG. Figure 4The top of the cross section of the second finger electrode 12B may also be stepped, and this curve also conforms to the above-mentioned natural exponential function. Similarly, the cost of the second finger electrode 12B can be determined by adjusting the length and thickness of each step.

[0065] As can be seen from the above, in this embodiment, since the thickness of the first finger electrode 12A gradually decreases from the connection surface between the first pad 13A and the first finger electrode to the direction away from the first pad 13A, the ability of the light emitting diode 1 to resist instantaneous large current surge can be greatly improved through the above finger electrode structure design. Therefore, the reliability of the light emitting diode 1 can be effectively improved.

[0066] Moreover, the top of the cross section of the first finger electrode 12A may be stepped. By means of the above-mentioned finger electrode structure design, the material cost of the first finger electrode 12A can be reduced, thereby reducing the overall cost of the light emitting diode 1. Therefore, the light emitting diode 1 can be more widely used.

[0067] In addition, through the above-mentioned finger electrode structure design, the impedance of the first finger electrode 12A adjacent to the input end of the light emitting diode 1 can be greatly reduced to reduce the situation where electrical energy is converted into heat energy. Therefore, the light efficiency of the light emitting diode 1 can also be further improved, making the light emitting diode 1 more energy-saving and power-saving. Therefore, the light emitting diode 1 can truly meet the needs of practical applications and can meet the trend of future development.

[0068] In addition, the light emitting diode 1 has a special finger electrode structure. The finger electrode structure design can not only greatly improve the ability of the light emitting diode 1 to resist instantaneous large current surges, but also improve the light efficiency of the light emitting diode 1. Therefore, the overall performance of the light emitting diode 1 can be improved to meet the needs of different applications.

[0069] Furthermore, the LED 1 has a simple design and a special finger-shaped electrode structure, so it can achieve the desired effect without increasing the cost. Therefore, the practicality of the LED 1 can be greatly improved, so that the LED 1 can be applied to various LED lighting devices.

[0070] Of course, this embodiment is only used for illustration and does not limit the scope of the present invention. Equivalent modifications or changes made to the high-reliability light-emitting diode 1 according to this embodiment should still be included in the patent scope of the present invention.

[0071] In summary, according to an embodiment of the present invention, the light emitting diode 1 includes a first-type semiconductor layer 11A, a first finger electrode 12A, a first pad 13A, a second-type semiconductor layer 11B, a second finger electrode 12B and a second pad 13B. The first finger electrode 12A is disposed on the first-type semiconductor layer 11A. The first pad 13A is disposed on the first-type semiconductor layer 11A and connected to the first finger electrode 12A. The second finger electrode 12B is disposed on the second-type semiconductor layer 11B. The second pad 13B is disposed on the second-type semiconductor layer 11B and connected to the second finger electrode 12B. The thickness of the first finger electrode 12A gradually decreases from the connection surface between the first pad 13A and the first finger electrode 12A to the direction away from the first pad 13A. Through the above-mentioned finger electrode structure design, the ability of the light emitting diode 1 to resist instantaneous large current surges can be greatly improved. Therefore, the reliability of the light emitting diode 1 can be effectively improved.

[0072] Furthermore, according to the embodiment of the present invention, the thickness of the first finger electrode 12A of the light emitting diode 1 gradually decreases from the connection surface between the first pad 13A and the first finger electrode 12A to the direction away from the first pad 13A. For example, the top of the cross section of the first finger electrode 12A can be curved or stepped. Through the above-mentioned finger electrode structure design, the material cost of the first finger electrode 12A can be reduced, so that the overall cost of the light emitting diode 1 is reduced. Therefore, the light emitting diode 1 can be more widely used.

[0073] In addition, according to the embodiment of the present invention, the light emitting diode 1 has a special finger electrode structure design. Through the above finger electrode structure design, the impedance of the first finger electrode 12A adjacent to the input end of the light emitting diode 1 can be greatly reduced to reduce the situation where electrical energy is converted into heat energy. Therefore, the light efficiency of the light emitting diode 1 can also be further improved, making the light emitting diode 1 more energy-saving and power-saving. Therefore, the light emitting diode 1 can indeed meet the needs of practical applications and can meet the trend of future development.

[0074] In addition, according to the embodiment of the present invention, the light emitting diode 1 has a special finger electrode structure. The above-mentioned finger electrode structure design can not only greatly improve the ability of the light emitting diode 1 to resist instantaneous large current surges, but also improve the light efficiency of the light emitting diode 1. Therefore, the overall performance of the light emitting diode 1 can be improved to meet the needs of different applications.

[0075] Furthermore, according to the embodiment of the present invention, the light emitting diode 1 has a simple design and a special finger-shaped electrode structure design, so the desired effect can be achieved without increasing the cost. Therefore, the practicality of the light emitting diode 1 can be greatly improved, so that the light emitting diode 1 can be applied to various light emitting diode 1 lighting devices.

[0076] It should be noted that, although the above embodiments have been described in this article, the scope of patent protection of the present invention is not limited thereby. Therefore, based on the innovative concept of the present invention, changes and modifications made to the embodiments described herein, or equivalent structures or equivalent process changes made using the contents of the present specification and drawings, directly or indirectly applying the above technical solutions to other related technical fields are all included in the scope of protection of the patent of the present invention.

Claims

1. A high reliability light emitting diode, characterized in that: include: A first type semiconductor layer; A first finger electrode is disposed on the first-type semiconductor layer; A first pad, disposed on the first-type semiconductor layer and connected to the first finger electrode; a second type semiconductor layer; A second finger electrode is disposed on the second-type semiconductor layer; as well as A second pad is disposed on the second-type semiconductor layer and connected to the second finger electrode; The thickness of the first finger electrode gradually decreases from the connecting surface between the first pad and the first finger electrode toward a direction away from the first pad.

2. The high reliability light emitting diode according to claim 1, characterized in that: The top of the cross section of the first finger electrode is in a step shape.

3. The high reliability light emitting diode according to claim 1, characterized in that: The top of the cross section of the first finger electrode is a curve.

4. The high reliability light emitting diode according to claim 3, characterized in that: The curve fits a natural exponential function.

5. The high reliability light emitting diode according to claim 3, characterized in that: The height of any point of the curve is equal to a preset height multiplied by a first adjustment value, the base of the first adjustment value is a natural constant, and the exponent of the first adjustment value is a second adjustment value multiplied by a distance between the point and the first pad.

6. The high reliability light emitting diode according to claim 5, characterized in that: The second adjustment value is between -0.012 and -0.

015.

7. The high reliability light emitting diode according to claim 1, characterized in that: It also includes a quantum well layer, the first type semiconductor layer is arranged on the quantum well layer, and the quantum well layer is arranged on the second type semiconductor layer.

8. The high reliability light emitting diode according to claim 7, characterized in that: The invention also includes a substrate, on which the second-type semiconductor layer is disposed.

9. The high reliability light emitting diode according to claim 8, characterized in that: It also includes a reflective layer, and the substrate is arranged on the reflective layer.

10. The high reliability light emitting diode according to claim 9, characterized in that: It also includes a composite buffer layer and a transparent conductive layer, wherein the composite buffer layer and the transparent conductive layer are arranged between the first finger-shaped electrode and the first-type semiconductor layer, the composite buffer layer is arranged on the first-type semiconductor layer, the transparent conductive layer is arranged on the composite buffer layer, and the first finger-shaped electrode is arranged on the transparent conductive layer.

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