Display device and manufacturing method thereof

Abstract

A display device comprises a driving circuit substrate, a plurality of light-emitting elements, a color conversion structure, a packaging layer, an opposite substrate and an embankment layer. The plurality of light-emitting elements are arranged on the driving circuit substrate and are electrically connected with the driving circuit substrate. The color conversion structure covers a first light-emitting element of the plurality of light-emitting elements. The packaging layer is arranged on the driving circuit substrate. The opposite substrate is arranged in the opposite direction of the driving circuit substrate. The embankment layer is arranged on the opposite substrate and located between the opposite substrate and the packaging layer. A low refractive index material exists between the top surface of the color conversion structure and the opposite substrate. The refractive index of the low-refractive-index material is smaller than or equal to 1.2. In addition, the manufacturing method of the display device is also provided.

Description

Technical Field

[0001] The present invention relates to a photoelectric device and a manufacturing method thereof, and in particular to a display device and a manufacturing method thereof. Background Art

[0002] The light-emitting diode display panel includes a driving circuit substrate and a plurality of light-emitting diode elements transferred to the driving circuit substrate. Inheriting the characteristics of light-emitting diodes, the light-emitting diode display panel has the advantages of power saving, high efficiency, high brightness and fast response time. In addition, compared with the organic light-emitting diode display panel, the light-emitting diode display panel also has the advantages of easy color adjustment, long light-emitting life and no image imprinting. Therefore, the light-emitting diode display panel is regarded as the next generation of display technology. Each pixel of the light-emitting diode display panel includes a red sub-pixel, a green sub-pixel and a blue sub-pixel for emitting red light, green light and blue light respectively. However, the current utilization efficiency of the light-emitting diode element of the red sub-pixel is low, which affects the performance of the light-emitting diode display panel. Summary of the invention

[0003] The present invention provides a display device, wherein the current utilization efficiency of the first light emitting element is high.

[0004] The invention provides a method for manufacturing a display device, which can manufacture a display device with high current utilization rate.

[0005] The display device of the present invention includes a driving circuit substrate, a plurality of light-emitting elements, a color conversion structure, an encapsulation layer, an opposing substrate and a bank layer. The plurality of light-emitting elements are arranged on the driving circuit substrate and are electrically connected to the driving circuit substrate. The plurality of light-emitting elements include a first light-emitting element. The color conversion structure covers the first light-emitting element. The encapsulation layer is arranged on the driving circuit substrate. The opposing substrate is arranged opposite to the driving circuit substrate. The bank layer is arranged on the opposing substrate and is located between the opposing substrate and the encapsulation layer. The color conversion structure has a top surface facing away from the driving circuit substrate. A low-refractive index material exists between the top surface of the color conversion structure and the opposing substrate. The refractive index of the low-refractive index material is less than or equal to 1.2.

[0006] The manufacturing method of the display device of the present invention comprises the following steps: providing a driving circuit substrate; transferring a plurality of light-emitting elements onto the driving circuit substrate and electrically connecting the plurality of light-emitting elements to the driving circuit substrate, wherein the plurality of light-emitting elements comprises a first light-emitting element; forming a color conversion structure on the driving circuit substrate to cover the first light-emitting element, wherein the driving circuit substrate comprises a first area and a second area outside the first area, and the first light-emitting element and the color conversion structure are arranged in the first area of ​​the driving circuit substrate; forming a packaging layer on the second area of ​​the driving circuit substrate, wherein the packaging layer exposes the color conversion structure arranged in the first area; providing an opposing substrate; forming a bank layer on the opposing substrate, wherein the bank layer has a plurality of openings, and the opposing element comprises the opposing substrate and the bank layer, and the light-emitting element substrate comprises the driving circuit substrate, the plurality of light-emitting elements, the color conversion structure and the packaging layer; assembling the opposing element and the light-emitting element substrate, wherein the plurality of openings of the bank layer of the opposing element respectively correspond to the plurality of light-emitting elements of the light-emitting element substrate.

[0007] In one embodiment of the present invention, the color conversion structure has a top surface facing away from the driving circuit substrate, and a low refractive index material exists between the top surface of the color conversion structure and the opposite substrate, and the refractive index of the low refractive index material is less than or equal to 1.2.

[0008] In one embodiment of the present invention, the color conversion structure directly covers the first light emitting element.

[0009] In one embodiment of the present invention, the refractive index of the low-refractive-index material is smaller than the refractive index of the color conversion structure and the refractive index of the first color filter pattern of the opposite substrate.

[0010] In one embodiment of the present invention, the low refractive index material includes a first air gap.

[0011] In one embodiment of the present invention, the low refractive index material is further present between the sidewall of the color conversion structure and the sidewall of the bank layer.

[0012] In one embodiment of the present invention, the distance between the sidewall of the color conversion structure and the sidewall of the bank layer in a direction parallel to the driving circuit substrate gradually changes as they move away from the driving circuit substrate.

[0013] In one embodiment of the present invention, the distance between the active layer of one of the plurality of light emitting elements and the driving circuit substrate in a direction perpendicular to the driving circuit substrate is greater than the film thickness of the packaging layer in the direction.

[0014] In one embodiment of the present invention, the encapsulation layer has a through hole, and the color conversion structure is disposed in the through hole.

[0015] In one embodiment of the present invention, the encapsulation layer is in contact with the sidewall of the color conversion structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figures 1A to 1G FIG. 4 is a cross-sectional schematic diagram of a manufacturing process of a display device according to a first embodiment of the present invention.

[0017] Figure 2 FIG. 4 is a cross-sectional schematic diagram of a display device according to a second embodiment of the present invention.

[0018] Figure 3 FIG. 4 is a cross-sectional schematic diagram of a display device according to a third embodiment of the present invention.

[0019] Figure 4 FIG. 4 is a cross-sectional schematic diagram of a display device according to a fourth embodiment of the present invention.

[0020] Figure 5 FIG. 5 is a cross-sectional schematic diagram of a display device according to a fifth embodiment of the present invention.

[0021] Figure 6 FIG. 4 is a cross-sectional schematic diagram of a display device according to a sixth embodiment of the present invention.

[0022] The reference numerals are described as follows:

[0023] 10, 10A, 10B, 10C, 10D, 10E: Display device

[0024] 100: Light-emitting element substrate

[0025] 110: Driving circuit substrate

[0026] 110a: District 1

[0027] 110b: Second District

[0028] 120: Light emitting element

[0029] 120B: The third light emitting element

[0030] 120G: Second light emitting element

[0031] 120R: First light emitting element

[0032] 122: Active layer

[0033] 130: Color conversion structure

[0034] 130s, 220s1, 220s2, 220s3: Sidewall

[0035] 130t, 140t: Top surface

[0036] 140: Encapsulation layer

[0037] 140a: Through hole

[0038] 142: Part 1

[0039] 144: Part 2

[0040] 200: Opposite element

[0041] 210: Opposite substrate

[0042] 212: Transparent base

[0043] 214: Light-shielding pattern layer

[0044] 214a, 220a: Open

[0045] 216: Color filter pattern

[0046] 216R: First color filter pattern

[0047] 216G: Second color filter pattern

[0048] 216B: Third color filter pattern

[0049] 220: Bank layer

[0050] 220aR: First opening

[0051] 220aG: Second opening

[0052] 220aB: The third opening

[0053] 300: Low refractive index material

[0054] 310, 320: Partial

[0055] AG1: First air gap

[0056] AG2: Second air gap

[0057] AG3: Third air gap

[0058] D1, D3, D4: distance

[0059] G120: Light emitting element group

[0060] G216: Color filter pattern set

[0061] H120: Height

[0062] I: Interface

[0063] L: The fourth color light

[0064] T130, T216, TAG2, TAG3, T220: thickness

[0065] T140, T142, T144, T214: film thickness

[0066] x, z: direction

[0067] ΔH: Difference DETAILED DESCRIPTION

[0068] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0069] It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it may be directly on or connected to another element, or an intermediate element may also exist. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intermediate elements. As used herein, "connection" may refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may refer to the presence of other elements between two elements.

[0070] As used herein, "about", "approximately" or "substantially" includes the stated value and the average value within an acceptable deviation range of the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately" or "substantially" can select a more acceptable deviation range or standard deviation depending on the optical property, etching property or other property, and can apply to all properties without a single standard deviation.

[0071] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present invention, and will not be interpreted as an idealized or overly formal meaning unless explicitly defined as such herein.

[0072] Figures 1A to 1G FIG. 1 is a cross-sectional diagram of the manufacturing process of the display device according to the first embodiment of the present invention. Figure 1AFirst, a driving circuit substrate 110 is provided, which has a plurality of sub-pixel driving structures (not shown). In some embodiments, each sub-pixel driving structure may include a sub-pixel driving circuit (not shown) and a pad group (not shown) electrically connected to the sub-pixel driving circuit, wherein the pad group includes at least one pad (not shown). For example, in some embodiments, each sub-pixel driving circuit may include a first transistor (not shown), a second transistor (not shown) and a capacitor (not shown), wherein the first end of the first transistor is electrically connected to a corresponding data line (not shown), the control end of the first transistor is electrically connected to a corresponding scan line (not shown), the second end of the first transistor is electrically connected to the control end of the second transistor, the first end of the second transistor is electrically connected to a corresponding power line (not shown), the capacitor is electrically connected to the second end of the first transistor and the first end of the second transistor, and the second end of the second transistor is electrically connected to a corresponding pad group. However, the present invention is not limited thereto, and in other embodiments, the sub-pixel driving circuit may also be a circuit of other forms.

[0073] Please refer to Figure 1A Then, the plurality of light-emitting elements 120 are transferred to the driving circuit substrate 110, and the plurality of light-emitting elements 120 are electrically connected to the driving circuit substrate 110. The plurality of light-emitting elements 120 are respectively bonded to a plurality of pad groups (not shown) of the driving circuit substrate 110. In some embodiments, the plurality of light-emitting elements 120 can be divided into a plurality of light-emitting element groups G120, each light-emitting element group G120 corresponding to a pixel of the display device. Each light-emitting element group G120 can include a first light-emitting element 120R, a second light-emitting element 120G, and a third light-emitting element 120B. For example, in some embodiments, the first light-emitting element 120R, the second light-emitting element 120G, and the third light-emitting element 120B can be a plurality of light-emitting diode elements for emitting a first color light, a second color light, and a third color light, respectively. In some embodiments, the first color light, the second color light, and the third color light are, for example, blue light, green light, and blue light, but the present invention is not limited thereto. Each light-emitting element 120 has a height H120. In some embodiments, the height H120 of the light emitting element 120 may be in a range of 5 μm to 9 μm. However, the present invention is not limited thereto, and the height H120 of the light emitting element 120 depends on the type of the light emitting element 120 .

[0074] Please refer to Figure 1BThen, a color conversion structure 130 is formed on the driving circuit substrate 110 to cover the first light-emitting element 120R. In some embodiments, the color conversion structure 130 can directly cover the first light-emitting element 120R. The driving circuit substrate 110 has a first area 110a and a second area 110b. The first light-emitting element 120R and the color conversion structure 130 are disposed in the first area 110a of the driving circuit substrate 110. The second area 110b is located outside the first area 110a. The color conversion structure 130 can convert the first color light emitted by the first light-emitting element 120R into a fourth color light. For example, in some embodiments, the color conversion structure 130 can convert the blue light emitted by the first light-emitting element 120R into red light. In some embodiments, the color conversion structure 130 can be selectively formed by photolithography, but the present invention is not limited thereto. The color conversion structure 130 has a thickness T130 in a direction z perpendicular to the driving circuit substrate 110. In some embodiments, the thickness T130 of the color conversion structure 130 is, for example, in the range of 14 μm to 21 μm, but the invention is not limited thereto. In some embodiments, the refractive index of the color conversion structure 130 is, for example, in the range of 1.8 to 1.9, but the invention is not limited thereto. In some embodiments, the difference ΔH between the thickness T130 of the color conversion structure 130 and the height H120 of the light emitting element 120 is, for example, in the range of 9 μm to 12 μm, but the invention is not limited thereto.

[0075] Please refer to Figure 1C Then, a packaging layer 140 is formed on the second area 110b of the driving circuit substrate 110. In some embodiments, the packaging layer 140 can be selectively formed by inkjet printing (IJP), but the present invention is not limited thereto. The packaging layer 140 exposes the color conversion structure 130 disposed in the first area 110a. In some embodiments, the packaging layer 140 further exposes other light-emitting elements 120 that are not covered by the color conversion structure 130, such as the second light-emitting element 120G and the third light-emitting element 120B disposed in the second area 110b. In some embodiments, the packaging layer 140 has a through hole 140a, and the color conversion structure 130 is disposed in the through hole 140a. In some embodiments, the packaging layer 140 contacts a portion of the side wall 130s of the color conversion structure 130, and the packaging layer 140 exposes another portion of the side wall 130s of the color conversion structure 130 and the top surface 130t of the color conversion structure 130.

[0076] In some embodiments, a distance D1 between an active layer 122 of each light-emitting element 120 and the driving circuit substrate 110 in a direction z perpendicular to the driving circuit substrate 110 is greater than a film thickness T140 of the encapsulation layer 140 in the direction z. In other words, a top surface 140t of the encapsulation layer 140 facing away from the driving circuit substrate 110 is lower than the active layer (or light-emitting layer) 122 of the light-emitting element 120. In some embodiments, the film thickness T140 of the encapsulation layer 140 is, for example, in the range of 1 μm to 2 μm, but the present invention is not limited thereto. In some embodiments, a refractive index of the encapsulation layer 140 is, for example, in the range of 1.5 to 1.6, but the present invention is not limited thereto.

[0077] Please refer to Figure 1D , then, a counter substrate 210 is provided. In some embodiments, the counter substrate 210 may include a transparent substrate 212, a light shielding pattern layer 214 disposed on the transparent substrate 212, and a plurality of color filter patterns 216 respectively located in a plurality of openings 214a of the light shielding pattern layer 214. In some embodiments, the plurality of color filter patterns 216 may be divided into a plurality of color filter pattern groups G216. Specifically, in some embodiments, each color filter pattern group G216 may include a first color filter pattern 216R, a second color filter pattern 216G, and a third color filter pattern 216B. In some embodiments, the first color filter pattern 216R, the second color filter pattern 216G, and the third color filter pattern 216B are, for example, a red filter pattern, a green filter pattern, and a blue filter pattern, respectively.

[0078] In some embodiments, the film thickness T214 of the light shielding pattern layer 214 is, for example, in the range of 1 μm to 1.5 μm, but the present invention is not limited thereto. In some embodiments, the refractive index of the light shielding pattern layer 214 is, for example, in the range of 1.5 to 1.6, but the present invention is not limited thereto. In some embodiments, the thickness T216 of the color filter pattern 216 is, for example, in the range of 2 μm to 2.5 μm, but the present invention is not limited thereto. In some embodiments, the refractive index of the color filter pattern 216 is, for example, in the range of 1.5 to 1.7, but the present invention is not limited thereto.

[0079] Please refer to Figure 1EThen, a bank layer 220 is formed on the counter substrate 210, wherein the bank layer 220 has a plurality of openings 220a. The plurality of openings 220a of the bank layer 220 are respectively located on the plurality of color filter patterns 216. In some embodiments, the bank layer 220 may be selectively formed using photolithography, but the present invention is not limited thereto. In some embodiments, the thickness T220 of the bank layer 220 is, for example, in the range of 15 μm to 22 μm, but the present invention is not limited thereto. In some embodiments, the refractive index of the bank layer 220 is, for example, in the range of 1.5 to 1.6, but the present invention is not limited thereto.

[0080] Please refer to Figure 1F , a counter element 200 includes a counter substrate 210 and a bank layer 220. A light emitting element substrate 100 includes a driving circuit substrate 110, a plurality of light emitting elements 120, a color conversion structure 130 and a packaging layer 140. Please refer to Figure 1F and Figure 1G Then, the opposing element 200 and the light emitting element substrate 100 are assembled to form the display device 10 .

[0081] Please refer to Figure 1G , the plurality of openings 220a of the bank layer 220 of the opposing element 200 correspond to the plurality of light-emitting elements 120 of the light-emitting element substrate 100 respectively. The opposing element 200 and the light-emitting element substrate 100 are connected to each other through the encapsulation layer 140. In some embodiments, a small portion of the bank layer 220 of the opposing element 200 may be sunken into the encapsulation layer 140 of the light-emitting element substrate 100, and a film thickness T142 of a first portion 142 of the encapsulation layer 140 that physically overlaps with the bank layer 220 may be smaller than a film thickness T144 of a second portion 144 of the encapsulation layer 140 that is located under the opening 220a of the bank layer 220. After the opposing element 200 and the light-emitting element substrate 100 are assembled, the plurality of light-emitting elements 120 of the light-emitting element substrate 100 are respectively located in the plurality of openings 220a of the bank layer 220, and the color conversion structure 130 is located in one of the openings 220a of the bank layer 220.

[0082] Please refer to Figure 1GThe display device 10 includes a driving circuit substrate 110, a plurality of light-emitting elements 120, a color conversion structure 130, a packaging layer 140, an opposite substrate 210, and a bank layer 220. The plurality of light-emitting elements 120 are disposed on the driving circuit substrate 110 and are electrically connected to the driving circuit substrate 110. The plurality of light-emitting elements 120 include a first light-emitting element 120R. The color conversion structure 130 covers the first light-emitting element 120R. The packaging layer 140 is disposed on the driving circuit substrate 110. The opposite substrate 210 is disposed opposite to the driving circuit substrate 110. The bank layer 220 is disposed on the opposite substrate 210 and is located between the opposite substrate 210 and the packaging layer 140.

[0083] It is worth noting that the color conversion structure 130 has a top surface 130t facing away from the driving circuit substrate 110. A low refractive index material 300 is present between the top surface 130t of the color conversion structure 130 and the opposite substrate 210, and a refractive index of the low refractive index material 300 is less than or equal to 1.2. The first light emitting element 120R is used to emit a first color light (not shown). The first color light is converted into a fourth color light L by the color conversion structure 130. The fourth color light L is transmitted to the opposite substrate 210. Through the low refractive index material 300 located between the color conversion structure 130 and the opposite substrate 210, the fourth color light L can be deflected and enter the opposite substrate 210 at a larger angle. In this way, the proportion of the fourth color light L being totally reflected at the interface I between the opposite substrate 210 and the external environment can be greatly reduced, thereby improving the light extraction efficiency of the fourth color light L (e.g., red light). That is, the current utilization efficiency of the first light-emitting element 120R can be improved, wherein the current utilization efficiency refers to the ratio of the light intensity of the fourth color light L to the current of the first light-emitting element 120R. For example, in some embodiments, the ratio of the light intensity of the fourth color light L to the maximum current of the first light-emitting element 120R can be 9.967 cd / A, which is 96% higher than the current utilization efficiency of conventional display devices.

[0084] In some embodiments, the refractive index of the low refractive index material 300 may be smaller than a refractive index of the color conversion structure 130 and a refractive index of a first color filter pattern 216R of the opposite substrate 210. In some embodiments, a portion 310 of the low refractive index material 300 is disposed between the top surface 130t of the color conversion structure 130 and the first color filter pattern 216R of the opposite substrate 210. In some embodiments, a distance D3 is spaced apart between the top surface 130t of the color conversion structure 130 and the first color filter pattern 216R of the opposite substrate 210. In some embodiments, the distance D3 is about 1 μm, but the present invention is not limited thereto.

[0085] In some embodiments, the plurality of openings 220a of the bank layer 220 include a first opening 220aR, a second opening 220aG, and a third opening 220aB, the first light emitting element 120R, the second light emitting element 120G, and the third light emitting element 120B are respectively located in the first opening 220aR, the second opening 220aG, and the third opening 220aB, and another portion 320 of the low refractive index material 300 exists between a side wall 130s of the color conversion structure 130 and a side wall 220s1 defining the first opening 220aR of the bank layer 220. In some embodiments, a distance D4 between the side wall 130s of the color conversion structure 130 and the side wall 220s1 of the bank layer 220 in a direction x parallel to the driving circuit substrate 110 gradually changes as it moves away from the driving circuit substrate 110. For example, in some embodiments, the distance D4 may gradually decrease as it moves away from the driving circuit substrate 110, but the invention is not limited thereto. In some embodiments, the distance D4 is, for example, in a range of 1 μm to 2 μm, but the invention is not limited thereto.

[0086] In some embodiments, the low refractive index material 300 between the color conversion structure 130 and the first color filter pattern 216R of the counter substrate 210 includes a first air gap AG1. In some embodiments, a second air gap AG2 further exists in a space enclosed by the second color filter pattern 216G, a side wall 220s2 defining the second opening 220aG of the bank layer 220, the second light-emitting element 120G, and the packaging layer 140. In some embodiments, the maximum thickness TAG2 of the second air gap AG2 is about 19 μm, but the present invention is not limited thereto. In some embodiments, a third air gap AG3 further exists in a space enclosed by the third color filter pattern 216B, a side wall 220s3 defining the third opening 220aB of the bank layer 220, the third light-emitting element 120B, and the packaging layer 140. In some embodiments, the maximum thickness TAG3 of the third air gap AG3 is about 19 μm, but the present invention is not limited thereto.

[0087] The display device 10 of one embodiment of the present invention can significantly improve the light extraction efficiency of the fourth color light L (e.g., red light). The manufacturing process of the display device 10 is simple and the production complexity is low. The display device 10 and the manufacturing method thereof of one embodiment of the present invention have at least one of the following advantages:

[0088] (1) The encapsulation layer 140 is formed on the driving circuit substrate 110 by inkjet printing (IJP) to accurately control the film thickness T140 of the encapsulation layer 140, thereby the air gap (the first air gap AG1, the second air gap AG2 and / or the third air gap AG3) can be controlled and made more uniform;

[0089] (2) The encapsulation layer 140 covers the pads of the light emitting element 120, the pad group of the driving circuit substrate 110, and the eutectic layer formed by the above two. That is, the encapsulation layer 140 covers the area that is prone to problems in the reliability test to achieve a protective effect;

[0090] (3) After the opposing element 200 is assembled with the light-emitting element substrate 100, the active layer 122 of the second light-emitting element 120G and the active layer 122 of the third light-emitting element 120B are respectively located in the second air gap AG2 and the third air gap AG3, and are not covered by the packaging layer 140. In this way, the light extraction efficiency of the second color light emitted by the second light-emitting element 120G and the third color light emitted by the third light-emitting element 120B can be improved.

[0091] It must be noted that the following embodiments use the component numbers and some contents of the previous embodiments, wherein the same number is used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can refer to the previous embodiments, and the following embodiments will not be repeated.

[0092] Figure 2 FIG. 4 is a cross-sectional schematic diagram of a display device according to a second embodiment of the present invention. Figure 2 The display device 10A and Figure 1G The display device 10 is similar to the display device 10, and the difference between the two is: Figure 2 The light emitting element 120 of the display device 10A is Figure 1G The light emitting element 120 of the display device 10 is different. Specifically, Figure 1G The light emitting element 120 of the display device 10 is a flip chip. Figure 2 The light emitting element 120 of the display device 10A is a vertical chip.

[0093] Figure 3 FIG. 4 is a cross-sectional schematic diagram of a display device according to a third embodiment of the present invention. Figure 3 The display device 10B and Figure 1G The display device 10 is similar to the display device 10, and the difference between the two is: Figure 3 The light emitting element 120 of the display device 10B is Figure 1G The light emitting element 120 of the display device 10 is different. Specifically, Figure 1G The light emitting element 120 of the display device 10 is a flip chip. Figure 3 The light emitting element 120 of the display device 10A is a lateral chip.

[0094] Figure 4 FIG. 4 is a cross-sectional schematic diagram of a display device according to a fourth embodiment of the present invention. Figure 4 The display device 10C and Figure 1G The display device 10 is similar to the display device 10, and the difference between the two is that: Figure 4 In the embodiment of FIG. 1 , the distance D4 gradually increases as it moves away from the driving circuit substrate 110 .

[0095] Figure 5 FIG. 5 is a cross-sectional schematic diagram of a display device according to a fifth embodiment of the present invention. Figure 5 The display device 10D and Figure 2 The display device 10A is similar to the display device 10A, and the difference between the two is that: Figure 5 In the embodiment of FIG. 1 , the distance D4 gradually increases as it moves away from the driving circuit substrate 110 .

[0096] Figure 6 FIG. 4 is a cross-sectional schematic diagram of a display device according to a sixth embodiment of the present invention. Figure 6 The display device 10E and Figure 3 The display device 10B is similar to the display device 10B, and the difference between the two is that: Figure 6 In the embodiment of FIG. 1 , the distance D4 gradually increases as it moves away from the driving circuit substrate 110 .

Claims

1. A display device, comprising: a driving circuit substrate; A plurality of light emitting elements are disposed on the driving circuit substrate and electrically connected to the driving circuit substrate; a color conversion structure, wherein the plurality of light-emitting elements include a first light-emitting element, and the color conversion structure covers the first light-emitting element; A packaging layer is disposed on the driving circuit substrate; A facing substrate, disposed opposite to the driving circuit substrate; as well as a bank layer, disposed on the opposite substrate and located between the opposite substrate and the packaging layer; The color conversion structure has a top surface facing away from the driving circuit substrate. A low-refractive index material exists between the top surface of the color conversion structure and the opposite substrate, and a refractive index of the low-refractive index material is less than or equal to 1.

2. 2 . The display device as claimed in claim 1 , wherein the color conversion structure directly covers the first light-emitting element. 3 . The display device as claimed in claim 1 , wherein the refractive index of the low-refractive-index material is smaller than a refractive index of the color conversion structure and a refractive index of a first color filter pattern of the opposite substrate. The display device as claimed in claim 1 , wherein the low refractive index material comprises a first air gap. 5 . The display device as claimed in claim 1 , wherein the low refractive index material is further present between a sidewall of the color conversion structure and a sidewall of the bank layer. 6 . The display device as claimed in claim 1 , wherein a distance between a side wall of the color conversion structure and a side wall of the bank layer in a direction parallel to the driving circuit substrate gradually changes as they move away from the driving circuit substrate. 7 . The display device as claimed in claim 1 , wherein a distance between an active layer of one of the light emitting elements and the driving circuit substrate in a direction perpendicular to the driving circuit substrate is greater than a film thickness of the packaging layer in the direction. 8 . The display device as claimed in claim 1 , wherein the encapsulation layer has a through hole, and the color conversion structure is disposed in the through hole. 9 . The display device as claimed in claim 1 , wherein the encapsulation layer contacts a side wall of the color conversion structure.

10. A method for manufacturing a display device, comprising: Providing a driving circuit substrate; Transferring a plurality of light-emitting elements onto the driving circuit substrate and electrically connecting the plurality of light-emitting elements to the driving circuit substrate, wherein the plurality of light-emitting elements include a first light-emitting element; A color conversion structure is formed on the driving circuit substrate to cover the first light-emitting element, wherein the driving circuit substrate has a first area and a second area outside the first area, and the first light-emitting element and the color conversion structure are disposed in the first area of ​​the driving circuit substrate; forming a packaging layer on the second area of ​​the driving circuit substrate, wherein the packaging layer exposes the color conversion structure located in the first area; providing a pair of opposing substrates; A bank layer is formed on the opposite substrate, wherein the bank layer has a plurality of openings, and an opposite element includes the opposite substrate and the bank layer, and a light-emitting element substrate includes the driving circuit substrate, the plurality of light-emitting elements, the color conversion structure and the packaging layer; as well as The opposing element and the light-emitting element substrate are assembled, wherein the plurality of openings of the bank layer of the opposing element respectively correspond to the plurality of light-emitting elements of the light-emitting element substrate. 11 . The method for manufacturing a display device as claimed in claim 10 , wherein the color conversion structure directly covers the first light-emitting element.

12. The method for manufacturing a display device as claimed in claim 10, wherein the color conversion structure has a top surface facing away from the driving circuit substrate, a low refractive index material exists between the top surface of the color conversion structure and the opposite substrate, and a refractive index of the low refractive index material is less than or equal to 1.

2. 13 . The method for manufacturing a display device as claimed in claim 12 , wherein the refractive index of the low-refractive-index material is smaller than a refractive index of the color conversion structure and a refractive index of a first color filter pattern of the opposite substrate. 14 . The method for manufacturing a display device as claimed in claim 12 , wherein the low refractive index material comprises a first air gap. 15 . The method for manufacturing a display device as claimed in claim 12 , wherein the low refractive index material is further present between a side wall of the color conversion structure and a side wall of the bank layer. 16 . The method for manufacturing a display device as claimed in claim 10 , wherein a distance between a side wall of the color conversion structure and a side wall of the bank layer in a direction parallel to the driving circuit substrate gradually changes as they move away from the driving circuit substrate. 17 . The manufacturing method of the display device as claimed in claim 10 , wherein a distance between an active layer of one of the plurality of light-emitting elements and the driving circuit substrate in a direction perpendicular to the driving circuit substrate is greater than a film thickness of the packaging layer in the direction. 18 . The method for manufacturing a display device as claimed in claim 10 , wherein the encapsulation layer has a through hole, and the color conversion structure is disposed in the through hole. 19 . The method for manufacturing a display device as claimed in claim 10 , wherein the encapsulation layer contacts a side wall of the color conversion structure.

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