Micro light emitting diode, display panel and display device

Abstract

The invention discloses a micro light-emitting diode, a display panel and a display device, and relates to the technical field of display, a light-emitting surface of the micro light-emitting diode comprises a first area and a second area at least surrounding the first area, the first area comprises a plurality of first concave parts, and the second area comprises a plurality of second concave parts. The depth of the second concave part is smaller than that of the first concave part, so that the light emitting efficiency and the light emitting uniformity of the micro light emitting diode are improved by utilizing the first concave part and the second concave part, the capillary effect of the second area on the black ink is reduced, and the phenomenon that the black ink climbs to the light emitting surface of the micro light emitting diode is reduced; or, the second area is directly set as the clearance area, and the surface of the clearance area is a smooth surface, so that the light emitting efficiency and the light emitting uniformity of the micro light emitting diode are improved mainly by utilizing the first concave part, the phenomenon that black ink climbs to the light emitting surface of the micro light emitting diode can be further reduced, and normal light emitting of the micro light emitting diode is ensured.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a micro light emitting diode, a display panel and a display device. Background Art

[0002] Micro-LED (Micro Light Emitting Diode) has the advantages of high brightness, high contrast, high color gamut, high reliability, etc., and is currently a hot research for the next generation of display light sources. However, micro-LEDs also have the problem of low luminous efficiency, resulting in high power consumption and easy heating. In order to improve the luminous efficiency of micro-LEDs, a PSS (Patterned Sapphire Substrate) structure or a roughened structure is usually set on the light-emitting surface of the micro-LED. The common PSS structure is an inverted cone arranged in an array, and the roughened structure is a randomly distributed rough microstructure.

[0003] In the micro-LED display panel, after the transfer of the micro-LEDs is completed, black ink is usually printed between the micro-LEDs through an inkjet printing process, and the black ink is leveled by the fluidity of the black ink to achieve an integrated black effect. Although the design height of the black ink does not exceed the micro-LED, the black ink will still climb to the top of the micro-LED and cover the light-emitting surface of the micro-LED, causing the brightness of the micro-LED to be damaged.

[0004] Therefore, how to reduce the black ink from climbing to the top of the micro-LED and ensure the normal light emission of the micro-LED is a technical problem that needs to be solved urgently by those skilled in the art. Summary of the invention

[0005] In order to solve the above technical problems, the embodiments of the present application provide a micro-LED, a display panel and a display device to reduce the black ink from climbing to the top of the micro-LED and ensure the normal light emission of the micro-LED.

[0006] To achieve the above objectives, the present application provides the following technical solutions:

[0007] In a first aspect, an embodiment of the present application provides a micro light emitting diode, the micro light emitting diode comprising:

[0008] A semiconductor stack, the semiconductor stack comprising a first surface and a second surface arranged opposite to each other, the first surface comprising a first region and a second region, the second region at least partially surrounding the first region;

[0009] The first region includes a plurality of first recessed portions recessed toward the second surface; the second region includes a plurality of second recessed portions recessed toward the second surface, the depth of the second recessed portions being less than the depth of the first recessed portions; or, the second region is a clearance region, the surface of the clearance region being a smooth surface.

[0010] In a second aspect, an embodiment of the present application provides a display panel, the display panel comprising:

[0011] An array substrate;

[0012] A plurality of micro-LEDs bonded to the array substrate, the micro-LEDs being the micro-LEDs described above, and the first surfaces of the micro-LEDs being away from the array substrate relative to the second surfaces of the micro-LEDs;

[0013] The light shielding layer is located on the array substrate and between the micro-LEDs, and the height of the light shielding layer relative to the array substrate is smaller than the height of the first surface of the micro-LEDs relative to the array substrate.

[0014] In a third aspect, an embodiment of the present application provides a display device, which includes the above-mentioned display panel.

[0015] Compared with the prior art, the above technical solution has the following advantages:

[0016] The micro-LED provided in the embodiment of the present application includes a semiconductor stack, the semiconductor stack includes a first surface and a second surface arranged opposite to each other, the first surface is a light emitting surface, the first surface includes a first area, the first area includes a plurality of first recessed portions recessed toward the second surface, the first surface also includes a second area, the second area at least partially surrounds the first area, that is, the second area is located in the peripheral area of ​​the first area, and a plurality of second recessed portions recessed toward the second surface are arranged in the second area, and the depth of the second recessed portions is less than the depth of the first recessed portions, so that the first recessed portions and the second recessed portions make the first surface a roughened surface, so as to improve the light emitting efficiency and light emitting uniformity of the micro-LED, and compared with the existing micro-LED, the light emitting surface is provided with a uniform A recessed structure with a depth of one degree is provided in the present application. On the first surface of the semiconductor stack, the depth of the second recessed portion of the second area is set to be smaller than the depth of the first recessed portion of the first area, so as to reduce the capillary effect of the second recessed portion of the second area on the black ink, thereby reducing the black ink crawling to the first surface of the semiconductor stack of the micro-light-emitting diode; or, the second area is directly set as a clearance area, and the surface of the clearance area is a smooth surface, that is, the recessed portion recessed toward the second surface is no longer provided in the second area. In this way, the first recessed portion is mainly used to improve the light output efficiency and uniformity of the micro-light-emitting diode, and the second area is a clearance area, which can further reduce the black ink crawling to the first surface of the semiconductor stack of the micro-light-emitting diode; thereby ensuring the normal light output of the micro-light-emitting diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 The electron micrograph of a local cross section of an existing micro light emitting diode display panel;

[0019] Figure 2 A schematic diagram of the cross-sectional structure of a micro light emitting diode provided in an embodiment of the present application;

[0020] Figure 3 A schematic diagram of a first surface of a semiconductor stack of a micro light emitting diode provided in an embodiment of the present application;

[0021] Figure 4 A schematic cross-sectional view of an epitaxial structure of a semiconductor stack;

[0022] Figure 5 A schematic cross-sectional structure diagram of another micro light emitting diode provided in an embodiment of the present application;

[0023] Figure 6 A schematic diagram of a first surface of another semiconductor stack of a micro light emitting diode provided in an embodiment of the present application;

[0024] Figure 7 A schematic diagram of a first surface of another semiconductor stack of a micro light emitting diode provided in an embodiment of the present application;

[0025] Figure 8 A schematic cross-sectional structure diagram of another micro light emitting diode provided in an embodiment of the present application;

[0026] Fig. 9 A schematic diagram of a planar projection of another micro light emitting diode provided in an embodiment of the present application on a first surface of a semiconductor stack;

[0027] Fig.10 A schematic diagram of the distribution of light emitted by another micro light emitting diode on the first surface of the semiconductor stack provided in an embodiment of the present application;

[0028] Fig.11 A schematic diagram of a first surface of a semiconductor stack of another micro light emitting diode provided in an embodiment of the present application;

[0029] Fig.12A schematic diagram of a first surface of a semiconductor stack of another micro light emitting diode provided in an embodiment of the present application;

[0030] Fig.13 A schematic diagram of a first surface of a semiconductor stack of another micro light emitting diode provided in an embodiment of the present application;

[0031] Fig.14 A schematic diagram of a first surface of a semiconductor stack of another micro light emitting diode provided in an embodiment of the present application;

[0032] Fig.15 A schematic diagram of a first surface of a semiconductor stack of another micro light emitting diode provided in an embodiment of the present application;

[0033] Fig.16 A schematic cross-sectional structure diagram of another micro light emitting diode provided in an embodiment of the present application;

[0034] Fig.17 A schematic diagram of a first surface of a semiconductor stack of another micro light emitting diode provided in an embodiment of the present application;

[0035] Fig.18 A schematic cross-sectional structure diagram of a display panel provided in an embodiment of the present application;

[0036] Fig.19 A schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present application;

[0037] Fig. 20 A schematic top view of a display panel provided in an embodiment of the present application;

[0038] Fig.21 A schematic top view of a display device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0039] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0040] The terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and need not be used to describe a specific order or sequential order. It should be understood that the terms used in this way can be interchangeable under appropriate circumstances, which is only to describe the distinction mode adopted by the objects of the same attributes when describing in the embodiments of the present application. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, so that the process, method, system, product or equipment comprising a series of units need not be limited to those units, but may include other units that are not clearly listed or inherent to these processes, methods, products or equipment.

[0041] Figure 1 A partial cross-sectional electron micrograph of an existing micro-LED display panel is shown in FIG. Figure 1 As shown, in the micro-LED display panel, after the transfer of the micro-LED 01 is completed, the black ink 02 is printed between the micro-LEDs through the inkjet printing process to achieve an integrated black effect. This has become the mainstream technical solution in the industry. Although the design height of the black ink does not exceed the micro-LED, since the entire light-emitting surface of the micro-LED is provided with a PSS structure or a roughened structure, these microstructures are prone to cause a capillary effect, causing the printed black ink to climb along the side wall of the micro-LED, and then climb to the light-emitting surface of the micro-LED, covering the light-emitting surface of the micro-LED, causing the luminous brightness of the micro-LED to be damaged.

[0042] As described in the background technology section, how to reduce the black ink from climbing to the top of the micro-LED and ensure the normal light emission of the micro-LED is a technical problem that needs to be solved urgently by those skilled in the art.

[0043] In view of this, the present application provides a micro light emitting diode. Figure 2 FIG. 1 shows a schematic cross-sectional structure diagram of a micro light emitting diode 100 provided in an embodiment of the present application. Figure 2 As shown, the micro LED 100 includes a semiconductor stack 110 , which is used for emitting light. The semiconductor stack 110 includes a first surface S1 and a second surface S2 that are oppositely disposed. The first surface S1 is a light emitting surface of the micro LED 100 .

[0044] Figure 3 A schematic diagram of a first surface S1 of a semiconductor stack 110 of a micro-LED 100 provided in an embodiment of the present application is shown, combined with Figure 2 and Figure 3As shown, the first surface S1 of the semiconductor stack 110 includes a first region S11 and a second region S12, and the second region S12 at least partially surrounds the first region S11, that is, the first region S11 is the middle region of the first surface S1 of the semiconductor stack 110 and is also the main light emitting region, and the second region S12 is located in the peripheral region of the first region S11; the second region S12 can completely surround the first region S11, or the second region S12 partially surrounds the first region S11.

[0045] Combination Figure 2 and Figure 3 As shown, the first region S11 includes a plurality of first recessed portions D1 recessed toward the second surface S2, and the second region S12 includes a plurality of second recessed portions D2 recessed toward the second surface S2, wherein the depth of the second recessed portions D2 is less than the depth of the first recessed portions D1. In this way, the first recessed portion D1 and the second recessed portion D2 can make the first surface S1 of the semiconductor stack 110 a roughened surface as a whole, so as to reflect, refract, etc. the output light of the micro-LED 100, thereby improving the light output efficiency and light output uniformity of the micro-LED 100; and, compared with the existing micro-LED in which the light output surface is provided with a recessed structure of uniform depth, in the embodiment of the present application, in the first surface S1 of the semiconductor stack 110, the depth of the second recessed portion D2 of the second area S12 is set smaller than the depth of the first recessed portion D1 of the first area S11, which can reduce the capillary effect of the second recessed portion D2 of the second area S12 on the black ink, thereby reducing the black ink climbing to the first surface S1 of the semiconductor stack 110 of the micro-LED 100, thereby ensuring the normal light output of the micro-LED.

[0046] It can be understood that the smaller the depth of the second recess D2 set in the second area S12 of the first surface S1, the weaker the capillary effect of the second recess D2 in the second area S12 on the black ink, and the more conducive to reducing the black ink climbing to the first surface S1 of the semiconductor stack 110 of the micro-LED 100.

[0047] Optionally, the first recessed portion D1 and the second recessed portion D2 may be PSS structures. Figure 4 As shown, Figure 4A cross-sectional schematic diagram of an epitaxial structure of a semiconductor stack 110 is shown. It can be seen that when preparing a micro-light-emitting diode 100, a convex pattern structure T10 can be firstly produced on a substrate 10 such as sapphire through an etching process, and the convex pattern structure T10 includes a first convex pattern T1 corresponding to a first concave portion D1 and a second convex pattern structure T2 corresponding to a second concave portion D2; then, a semiconductor stack 110 is formed on the surface of the substrate 10 having the convex pattern structure T10, so that the semiconductor stack 110 forms a first concave portion D1 and a second concave portion D2 on the surface (i.e., the first surface S1) of the substrate 10; subsequently, after the prepared light-emitting diode 100 is transferred to an array substrate from the side of the surface (i.e., the second surface S2) of the semiconductor stack 110 away from the substrate 10, the first surface S1 of the semiconductor stack 110 includes a plurality of first concave portions D1 located in a first area S11 and a plurality of second concave portions D2 located in a second area S12, and these concave portions are called a PSS structure.

[0048] Alternatively, the first recessed portion D1 and the second recessed portion D2 may also be randomly distributed recessed microstructures.

[0049] Figure 5 FIG. 1 shows a cross-sectional structure diagram of another micro light emitting diode 100 provided in an embodiment of the present application. Figure 6 A schematic diagram of a first surface S1 of a semiconductor stack 110 of another micro-LED 100 provided in an embodiment of the present application is shown, Figure 5 and Figure 6 As shown, Figure 2 and Figure 3 The same as the micro-LED shown is that in the micro-LED 100, the first surface S1 of the semiconductor stack 110 also includes a first area S11 and a second area S12, and the second area S12 at least partially surrounds the first area S11, that is, the first area S11 is the middle area of ​​the first surface S1 of the semiconductor stack 110 and is also the main light-emitting area, and the second area S12 is located in the peripheral area of ​​the first area S11; the second area S12 can completely surround the first area S11, or the second area S12 partially surrounds the first area S11.

[0050] Combination Figure 5 and Figure 6 As shown, Figure 2 and Figure 3The difference between the micro-LED shown in the figure is that in the micro-LED 100, the second area S12 of the first surface S1 of the semiconductor stack 110 is a clearance area, and the surface of the clearance area is a smooth surface, that is, the second recessed portion D2 recessed toward the second surface S2 is no longer provided in the second area S12; in this way, the first recessed portion D1 can make the first area S11 of the first surface S1 of the semiconductor stack 110 a roughened surface, and because the first area S11 is the middle area of ​​the first surface S1 of the semiconductor stack 110 and is also the main light emitting area, the first recessed portion D1 can still be used for the emission of the micro-LED 100. The light is reflected and refracted, etc., so as to improve the light output efficiency and uniformity of the micro-LED 100; and, the second area S12 of the first surface S1 of the semiconductor stack 110 is set as a clearance area, so that the second area S12 no longer has a capillary effect on the black ink, and although the first recessed structure D1 of the first area S11 has a capillary effect on the black ink, due to the separation of the second area, the capillary effect of the first area S11 on the black ink is also weakened, thereby further reducing the black ink climbing to the first surface S1 of the semiconductor stack 110 of the micro-LED 100, thereby ensuring the normal light output of the micro-LED.

[0051] It can be understood that, compared with setting a second recess D2 with a smaller depth in the second area S12 of the first surface S1, setting the second area S12 of the first surface S1 as a clearance area will further reduce the black ink from creeping onto the first surface S1 of the semiconductor stack 110 of the micro-LED 100 .

[0052] Compared with setting the second area S12 of the first surface S1 as a clearance area, a second recessed portion D2 with a smaller depth is set in the second area S12 of the first surface S1. Since the second recessed portion D2 is similar to the first recessed portion D1 and can also reflect and refract the output light of the micro-LED 100, the light output efficiency and light output uniformity of the micro-LED 100 are better improved.

[0053] It can also be understood that, whether setting a second recessed portion D2 with a smaller depth in the second area S12 of the first surface S1 or setting the second area S12 of the first surface S1 as a clearance area, compared to setting the second area S12 of the first surface S1 to partially surround the first area S11 of the first surface S1, setting the second area S12 of the first surface S1 to completely surround the first area S11 of the first surface S1 will weaken the capillary effect of the black ink from each edge of the first surface S1, thereby further reducing the black ink climbing to the first surface S1 of the semiconductor stack 110 of the micro-light-emitting diode 100.

[0054] like Figure 3 and Figure 6As shown, the first surface S1 of the semiconductor stack 110 includes multiple edges. The larger the width of the second area S12 corresponding to any edge of the first surface S1, the weaker the capillary effect of the first surface S1 on the black ink at the edge, and the less likely the black ink will crawl from the edge of the first surface S1 to the first surface S1 of the semiconductor stack 110 of the micro-LED 100.

[0055] However, if the second region S12 of the first surface S1 of the semiconductor stack 110 is provided with a second recessed portion D2 with a smaller depth or is directly a clear area, the reflection and refraction of the light emitted by the micro-LED 100 by the second region S12 will be weakened, thereby weakening the effect of the second region S12 on improving the light extraction efficiency and uniformity of the micro-LED 100. Therefore, the larger the width of the second region S12 corresponding to any edge of the first surface S1 of the semiconductor stack 110 is, the more likely it is to affect the light extraction efficiency and uniformity of the edge of the first surface S1.

[0056] That is to say, the width of the second region S12 corresponding to any edge of the first surface S1 of the semiconductor stack 110 needs to compromise the capillary effect of the first surface S1 on the black ink at the edge and the influence on the light extraction efficiency and uniformity of the micro LED 100.

[0057] Optionally, in some embodiments of the present application, such as Figure 3 and Figure 6 As shown, the second region S12 of the first surface S1 of the semiconductor stack 110 surrounds its first region S11, and the width of the second region S12 corresponding to any edge of the first surface S1 is greater than the maximum aperture of the first recessed portion D1, wherein the width of the second region S12 corresponding to any edge of the first surface S1 is the minimum distance between the edge of the first surface S1 and the first recessed portion D1 in the first region S11.

[0058] It is understandable that since the shapes and arrangements of the first recessed portions D1 can be varied, the width of the second region S12 corresponding to any edge of the first surface S1 is defined as the minimum distance between the edge of the first surface S1 and the first recessed portion D1 in the first region S11.

[0059] like Figure 3 and Figure 6As shown, the maximum aperture of the first recessed portion D1 in the first area S11 of the first surface S1 is d0; the multiple edges of the first surface S1 may include four edges connected in sequence to form a rectangle, and the first surface S1 is a rectangle, wherein the first edge B1 and the third edge B3 are arranged opposite to each other, and the second edge B2 and the fourth edge B4 are arranged opposite to each other, and the length of the first edge B1 is greater than the length of the second edge B2, that is, the first edge B1 and the third edge B3 are long edges of the first surface S1, and the second edge B2 and the fourth edge B4 are short edges of the first surface S1.

[0060] Among them, the width of the second area S12 corresponding to the first edge B1 of the first surface S1 is the first width w1, w1>d0; the width of the second area S12 corresponding to the second edge B2 of the first surface S1 is the second width w2, w2>d0; the width of the second area S12 corresponding to the third edge B3 of the first surface S1 is the third width w3, w3>d0; the width of the second area S12 corresponding to the fourth edge B4 of the first surface S1 is the fourth width w4, w4>d0.

[0061] With such configuration, the capillary effect on the black ink can be effectively weakened from each edge of the first surface S1 , and the black ink can be significantly reduced from creeping onto the first surface S1 of the semiconductor stack 110 of the micro-LED 100 .

[0062] As mentioned above, reference Figure 4 As shown, when forming the first recessed structure D1 (or the first recessed structure D1 and the second recessed structure D2) on the first surface S1 of the semiconductor stack 110, the substrate 10 is first etched to form a convex pattern structure T10. Therefore, considering the process deviation when etching the substrate 10 and the alignment accuracy deviation when the manufactured micro-LED 100 is subsequently transferred to the array substrate to form a micro-LED display panel, it is further optional that in some embodiments of the present application, the width of the second area S12 corresponding to any edge of the first surface S1 is set to be not less than 4μm, for example, Figure 3 and Figure 6 As shown, the widths w1, w2, w3 and w4 of the second area S12 corresponding to the four edges of the first surface S1 satisfy: w1≥4μm, w2≥4μm, w3≥4μm, w4≥4μm; such a configuration ensures that after the manufactured micro-LED 100 is transferred to the array substrate to form a micro-LED display panel, the capillary effect on the black ink can be effectively weakened from each edge of the first surface S1, significantly reducing the black ink climbing to the first surface S1 of the semiconductor stack 110 of the micro-LED 100.

[0063] Considering that the difficulty of black ink crawling from each edge of the first surface S1 of the semiconductor stack 110 to the first surface S1 may be different, therefore, optionally, in some embodiments of the present application, the widths of the second regions S12 corresponding to at least two edges of the first surface S1 are set to be different. In this way, the width of the corresponding second region S12 can be set larger at the edge of the first surface S1 where the black ink easily crawls over, so as to reduce the black ink crawling over the edge of the first surface S1 to a greater extent; and the width of the corresponding second region S12 can be set smaller at the edge of the first surface S1 where the black ink is relatively difficult to crawl over, so as to reduce the black ink crawling over the edge of the first surface S1, and at the same time, more first recessed portions D1 can be set, so as to improve the light extraction efficiency and light uniformity of the micro-light emitting diode 100.

[0064] Further, considering that the first surface S1 of the semiconductor stack 110 is generally rectangular, Figure 7 As shown, Figure 7 A schematic diagram of a first surface S1 of a semiconductor stack 110 of another micro-LED 100 provided in an embodiment of the present application is shown. It can be seen that the first surface S1 of the semiconductor stack 110 includes four edges connected in sequence to form a rectangle, wherein the first edge B1 and the third edge B3 are arranged opposite to each other, the second edge B2 and the fourth edge B4 are arranged opposite to each other, and the length of the first edge B1 is greater than the length of the second edge B2, that is, the first edge B1 and the third edge B3 are long edges of the first surface S1, and the second edge B2 and the fourth edge B4 are short edges of the first surface S1; the width of the second area S12 corresponding to the first edge B1 of the first surface S1 is the first width w1, the width of the second area S12 corresponding to the second edge B2 of the first surface S1 is the second width w2, the width of the second area S12 corresponding to the third edge B3 of the first surface S1 is the third width w3, and the width of the second area S12 corresponding to the fourth edge B4 of the first surface S1 is the fourth width w4.

[0065] Since black ink is more likely to crawl over the short edge of the first surface S1 to reach the first surface S1, but is relatively difficult to crawl over the long edge of the first surface S1 to reach the first surface S1, the width of the second area S12 corresponding to the short edge of the first surface S1 can be set to be greater than the width of the second area S12 corresponding to the long edge of the first surface S1, that is, w2>w1, and w2>w3; w4>w1, and w4>w3; in this way, at the short edge of the first surface S1, the wider second area S12 is used to reduce the black ink crawling over the short edge of the first surface S1 to reach the first surface S1 to a greater extent, and at the long edge of the first surface S1, the relatively narrow second area S12 is used to prevent the black ink from crawling over the long edge of the first surface S1 to reach the first surface S1, and at the same time, more first recessed portions D1 can be provided to improve the light output efficiency and light output uniformity of the micro-light emitting diode 100.

[0066] In the above-mentioned embodiments, the semiconductor stack 110 in the micro-LED 100 is regarded as a whole. Specifically, Figure 8 FIG. 1 shows a cross-sectional structure diagram of another micro-LED 100 provided in an embodiment of the present application. Figure 8 As shown, the semiconductor stack 110 includes a non-doped semiconductor layer 111, a first-type semiconductor layer 112, an active layer 113 and a second-type semiconductor layer 114 stacked in sequence, wherein the active layer 113 and the second-type semiconductor layer 114 expose a portion of the first-type semiconductor layer 112; the surface of the non-doped semiconductor layer 111 away from the first-type semiconductor layer 112 is a first surface S1, and the first surface S1 includes a first region S11 and a second region S12 at least partially surrounding the first region S11, and the first region S11 is provided with a plurality of first recesses D1; ​​the surface of the second-type semiconductor layer 114 away from the active layer 113 and the surface of the first-type semiconductor layer 112 exposed by the active layer 113 and the second-type semiconductor layer 114 are a second surface S2, wherein the surface of the first-type semiconductor layer 112 exposed by the active layer 113 and the second-type semiconductor layer 114 is provided with a first electrode M1, and the surface of the second-type semiconductor layer 114 away from the active layer 113 is provided with a second electrode M2. This micro light-emitting diode is a horizontal micro light-emitting diode. Figure 8 As shown, the micro LED 100 further includes an insulating layer 120 covering the second surface S2 except for the regions where the first electrode M1 and the second electrode M2 ​​are located.

[0067] Fig. 9 A schematic diagram of a plane projection of another micro-LED 100 provided in an embodiment of the present application on the first surface S1 of the semiconductor stack 110 is further shown. Figure 8 and Fig. 9As shown, the first electrode M1 and the second electrode M2 ​​extend along the extension direction of the short edge of the first surface S1, i.e., the extension direction of the second edge B2 and the fourth edge B2, and the first electrode M1 and the second electrode M2 ​​are relatively arranged along the extension direction of the long edge of the first surface S1, i.e., the extension direction of the first edge B1 and the third edge B3.

[0068] As we know, in the micro-LED 100, the active layer 113 is the light-emitting layer, and the overlapping portion of the first-type semiconductor layer 112, the active layer 113 and the second-type semiconductor layer 114 is the light-emitting portion A1. Since the active layer 113 and the second-type semiconductor layer 114 need to expose part of the first-type semiconductor layer 112 to form a mesa structure, Figure 8 and Fig. 9 As shown, the orthographic projection of the first electrode M1 on the first surface S1 is located on the side of the orthographic projection of the second electrode M2 ​​on the first surface S1 close to the second edge B2 of the first surface S1, and the distance d1 between the orthographic projection of the active layer 113 on the first surface S1 and the second edge B2 of the first surface S1 is greater than the distance d2 between the orthographic projection of the active layer 113 on the first surface S1 and the fourth edge B4 of the first surface S1.

[0069] It can be understood from this that, Fig.10 As shown, Fig.10 A schematic diagram of the distribution of emitted light from another micro-LED 100 provided in an embodiment of the present application on the first surface S1 of the semiconductor stack 110 is shown. It can be seen that, compared with the second edge B2 of the first surface S1, the orthographic projection of the active layer 113 of the micro-LED 100 on the first surface S1 is closer to the fourth edge B4 of the first surface S1, that is, in the first surface S1, the main light emitting area (i.e., the orthographic projection area of ​​the active layer 113 on the first surface S1) is closer to the fourth edge B4 than the second edge B2.

[0070] Based on this, Fig.11 As shown, Fig.11The figure shows a schematic diagram of the first surface S1 of the semiconductor stack 110 of yet another micro light-emitting diode 100 provided by an embodiment of the present application. It can be seen that the width of the second region S12 corresponding to the second edge B2 of the first surface S1, that is, the second width w2, can be set to be less than the width of the second region S12 corresponding to the fourth edge B4 of the first surface S1, that is, the fourth width w4, that is, w2 < w4. In this way, on the one hand, by setting the width w4 of the second region S12 corresponding to the fourth edge B4 of the first surface S1 to be larger, the black ink can be effectively prevented from climbing from the fourth edge B4 of the first surface S1 to the first surface S1 and reaching the orthographic projection region of the active layer 113 on the first surface S1 (i.e., the main light-emitting region); on the other hand, by setting the width w2 of the second region S12 corresponding to the second edge B2 of the first surface S1 to be smaller, more first recesses D1 can be provided near the second edge B2 of the first surface S1. The light emitted by the active layer 113 is averaged toward the second edge B2 by using these first recesses D1 near the second edge B2, which is beneficial to improving the uniformity of the micro light-emitting diode 100 in the direction where the second edge B2 and the fourth edge B4 are oppositely arranged.

[0071] Fig.12 The figure shows a schematic diagram of the first surface S1 of another micro light-emitting diode 100 provided by an embodiment of the present application. Combining Fig. 9 and Fig.12 as shown, it is also possible that the distance d1 between the orthographic projection of the active layer 113 on the first surface S1 and the second edge B2 of the first surface S1 is greater than the distance d2 between the orthographic projection of the active layer 113 on the first surface S1 and the fourth edge B4 of the first surface S1. Thus, the corresponding region space of the second edge B2 of the first surface S1 is larger, while the corresponding region space of the fourth edge B4 of the first surface S1 is smaller. Therefore, the width of the second region S12 corresponding to the second edge B2 of the first surface S1, that is, the second width w2, is set to be greater than the width of the second region S12 corresponding to the fourth edge B4 of the first surface S1, that is, the fourth width w4, that is, w2 > w4. At this time, as long as the second region S12 corresponding to the fourth edge B4 of the first surface S1 can effectively prevent the black ink from climbing from the fourth edge B4 of the first surface S1 to the first surface S1 and reaching the orthographic projection region of the light-emitting part A1 on the first surface S1 (i.e., the main light-emitting region).

[0072] Fig.13 The figure shows a schematic diagram of the first surface S1 of yet another micro light-emitting diode 100 provided by an embodiment of the present application, as Fig.13As shown, whether w2 < w4 or w2 > w4, the second region S12 corresponding to the second edge B2 of the first surface S1 may also be provided with second recesses D2, so that the light emitted from the active layer 113 is averaged toward the second edge B2 by means of these second recesses D2 near the second edge B2, which is beneficial to improving the uniformity of the micro light-emitting diode 100 in the direction where the second edge B2 and the fourth edge B4 are oppositely arranged. Moreover, the second region S12 corresponding to the fourth edge B4 of the first surface S1 is set as a clearance area, thereby effectively reducing the black ink from climbing from the fourth edge B4 of the first surface S1 to the first surface S1 and reaching the orthographic projection area of the active layer 113 on the first surface S1 (i.e., the main light-emitting area).

[0073] The above embodiments respectively illustrate the case where the width of the second region S12 corresponding to the second edge B2 of the first surface S1, i.e., the second width w2, is not equal to the width of the second region S12 corresponding to the fourth edge B4 of the first surface S1, i.e., the fourth width w4. Alternatively, for the sake of simplifying the design, w2 = w4 may also be set.

[0074] In addition, it can also be understood that, referring to Fig. 9 As shown, since the distance d3 between the orthographic projection of the active layer 113 on the first surface S1 and the first edge B1 of the first surface S1 is less than the distance d1 between the orthographic projection of the active layer 113 on the first surface S1 and the second edge B2 of the first surface S1, and less than the distance d2 between the orthographic projection of the active layer 113 on the first surface S1 and the fourth edge B4 of the first surface S1, due to the space limitation, therefore, as Figure 7 shown, w2 > w1 and w4 > w1 are set.

[0075] Similarly, referring to Fig. 9 As shown, since the distance d4 between the orthographic projection of the active layer 113 on the first surface S1 and the third edge B3 of the first surface S1 is less than the distance d1 between the orthographic projection of the active layer 113 on the first surface S1 and the second edge B2 of the first surface S1, and less than the distance d2 between the orthographic projection of the active layer 113 on the first surface S1 and the fourth edge B4 of the first surface S1, due to the space limitation, therefore, as Figure 7 shown, w2 > w3 and w4 > w3 are set.

[0076] Furthermore, referring to Fig. 9 As shown, since the distance d3 between the orthographic projection of the active layer 113 on the first surface S1 and the first edge B1 of the first surface S1 may be different from the distance d4 between the orthographic projection of the active layer 113 on the first surface S1 and the third edge B3 of the first surface S1, therefore, as Fig.14 shown, Fig.14FIG. 0 shows a schematic diagram of the first surface S1 of the semiconductor stack 110 of another micro light-emitting diode 100 provided by the embodiments of the present application. It can be seen that the width of the second region S12 corresponding to the first edge B1 of the first surface S1, i.e., the first width w1, can be set to be unequal to the width of the second region S12 corresponding to the third edge B3 of the first surface S1, i.e., the third width w3, that is, w1≠w3. For example, the distance d3 between the orthographic projection of the active layer 113 on the first surface S1 and the first edge B1 of the first surface S1 is less than the distance d4 between the orthographic projection of the active layer 113 on the first surface S1 and the third edge B3 of the first surface S1, d3<d4. Then, due to space limitations, the width of the second region S12 corresponding to the first edge B1 of the first surface S1, i.e., the first width w1, can be set to be less than the width of the second region S12 corresponding to the third edge B3 of the first surface S1, i.e., the third width w3, w1<w3.

[0077] Optionally, for simplicity of design, it can also be as Figure 7 shown, set the width of the second region S12 corresponding to the first edge B1 of the first surface S1, i.e., the first width w1, to be equal to the width of the second region S12 corresponding to the third edge B3 of the first surface S1, i.e., the third width w3, that is, w1 = w3.

[0078] As can be seen from the above analysis, the widths of the second regions S12 corresponding to the respective edges of the first surface S1 can be unequal to each other. Of course, for simplicity of design, as Figure 3 and Figure 6 shown, it can also be set that the widths of the second regions S12 corresponding to the respective edges of the first surface S1 are equal.

[0079] Based on any of the above embodiments, optionally, in some embodiments of the present application, as Figure 3 、 Figure 6 、 Figure 7 、 Figure 11-Figure 14 shown, in the first region S11 of the first surface S1 of the semiconductor stack 110, the first recesses D1 are arranged in a row along the first direction X, and multiple rows of the first recesses D1 are arranged along the second direction Y, and the first direction X intersects with the second direction Y; the first recesses D1 in the spaced rows intersect along the second direction Y, and the first recesses D1 in the adjacent rows do not overlap at least partially along the second direction Y. With such a setting, it is beneficial for the multiple first recesses D1 to be closely arranged in the first region S11 of the first surface S1, enhancing the reflection, refraction, etc. of the first recesses D1 on the emitted light of the micro light-emitting diode 100, and further enhancing the improvement effect on the light extraction efficiency and light extraction uniformity of the micro light-emitting diode 100.

[0080] Further optionally, as Figure 3 、 Figure 6 、 Figure 7 、 Figure 11-Figure 14 As shown, in the first area S11 of the first surface S1 of the semiconductor stack 110, a plurality of first recesses D1 are arranged so that the geometric centers of the first recesses D1 in the same row are located on the same horizontal line L1, the geometric centers of the first recesses D1 in alternate rows are located on the same vertical line L2, and the geometric centers of the first recesses D1 in adjacent rows are located on different vertical lines L2. In this way, the first recesses D1 are arranged in a honeycomb-like manner, which can make the light output of the micro-LED 100 at various angles more uniform and reduce the color deviation at different angles.

[0081] Based on any of the above embodiments, optionally, in some embodiments of the present application, such as Figure 3 As shown, when the second area S12 of the first surface S1 of the semiconductor stack 110 includes a plurality of second recessed portions D2, the second recessed portions D2 can be evenly arranged with the first recessed portions D1. This arrangement can simplify the process of forming the first convex pattern structure T1 corresponding to the first recessed portions D1 and the second convex pattern structure T2 corresponding to the second recessed portions D2 on the substrate 10.

[0082] Fig.15 FIG. 1 is a schematic diagram showing a first surface S1 of a semiconductor stack 110 of another micro-LED 100 provided in an embodiment of the present application. Fig.15 As shown, optionally, in some embodiments of the present application, the first surface S1 of the semiconductor stack 110 includes a plurality of second recesses D2, the maximum aperture c0 of the second recess D2 is smaller than the maximum aperture d0 of the first recess D1, and / or the distance between two adjacent second recesses D2 is greater than the distance between two adjacent first recesses D1. Such a configuration can further reduce the capillary effect of the second recess D2 in the second region S12 on the black ink compared to the design of the same size of the second recess D2 and the first recess D1, thereby further reducing the black ink from creeping onto the first surface S1 of the semiconductor stack 110 of the micro-LED 100.

[0083] It can be understood that when the first recessed portion D1 and the second recessed portion D2 are evenly arranged, if the maximum aperture c0 of the second recessed portion D2 is set smaller than the maximum aperture d0 of the first recessed portion D1, the distance between two adjacent second recessed portions D2 will also be greater than the distance between two adjacent first recessed portions D1.

[0084] When the first recessed portions D1 and the second recessed portions D2 are unevenly arranged, it is also possible to set the maximum aperture c0 of the second recessed portions D2 smaller than the maximum aperture d0 of the first recessed portions D1, or the distance between two adjacent second recessed portions D2 is larger than the distance between two adjacent first recessed portions D1.

[0085] In practical applications, the maximum aperture d0 of the first recessed portion D1 may be in the range of 2 μm-3 μm, including the endpoint values, and the depth of the first recessed portion D1 may be in the range of 1 μm-2 μm, including the endpoint values. From the above analysis, it can be seen that the depth of the second recessed portion D2 is less than the depth of the first recessed portion D1, and the maximum aperture c0 of the second recessed portion D2 is less than or equal to the maximum aperture d0 of the first recessed portion D1.

[0086] It should be noted that the embodiment of the present application does not limit the shapes of the first recessed portion D1 and the second recessed portion D2. Figure 2 and Figure 3 As shown, the first recessed portion D1 and the second recessed portion D2 are both elliptical. Fig.16 and Fig.17 As shown, Fig.16 FIG. 1 shows a cross-sectional structure diagram of another micro light emitting diode 100 provided in an embodiment of the present application. Fig.17 A schematic diagram of the first surface S1 of the semiconductor stack 110 of another micro-LED 100 provided in an embodiment of the present application is shown. It can be seen that the first recessed portion D1 can also be a pyramid. The first recessed portion D1 and the second recessed portion D2 can also be other shapes such as a pyramid. Moreover, the shape of the first recessed portion D1 can be the same as the shape of the second recessed portion D2, or it can be different from the shape of the second recessed portion D2.

[0087] Based on the same inventive concept, the embodiment of the present application further provides a display panel, Fig.18 A schematic cross-sectional structure diagram of a display panel provided in an embodiment of the present application is shown. Fig.18 As shown, the display panel includes:

[0088] An array substrate 200;

[0089] A plurality of micro-LEDs 100 bonded to an array substrate 200, wherein the micro-LEDs 100 are the micro-LEDs provided by any of the above embodiments, and a first surface S1 of the micro-LEDs 100 is away from the array substrate 200 relative to a second surface S2 of the micro-LEDs 100;

[0090] The light shielding layer 300 is located on the array substrate 200 and between the micro LEDs 100 , and the height of the light shielding layer 300 relative to the array substrate 200 is smaller than the height of the first surface S1 of the micro LEDs 100 relative to the array substrate 200 .

[0091] It can be understood that after bonding multiple micro-LEDs 100 to the array substrate 200, black ink is printed between the micro-LEDs 100 through an inkjet printing process, and the black ink is leveled by the fluidity of the black ink to form a shading layer 300, thereby achieving an integrated black effect, reducing reflection and fixing the micro-LEDs 100.

[0092] Since the first surface S1 of the micro-LED 100 is provided with a plurality of recessed portions (the first recessed portion D1 or the first recessed portion D1 and the second recessed portion D2), the first surface S1 is a roughened surface, thereby improving the light extraction efficiency and uniformity of the micro-LED 100; and the first surface S1 of the micro-LED 100 is divided into a first area S11 and a second area S12 at least surrounding the first area S11, the first area S11 is provided with the first recessed portion D1, the second area S12 is provided with the second recessed portion D2, the depth of the second recessed portion D2 is less than the depth of the first recessed portion D1, or the second area S12 is a clearance area, so as to reduce the black ink from climbing to the first surface S1 of the micro-LED 100, thereby ensuring the normal light extraction of the micro-LED 100.

[0093] Furthermore, if Fig.18 As shown, the display panel may further include:

[0094] An encapsulation glue layer 400 covering the micro LED 100 and the light shielding layer 300;

[0095] The packaging film / cover plate 500 is located on the side of the packaging glue layer away from the array substrate 200 .

[0096] It is understandable that the recessed portion provided on the first surface S1 of the micro-LED 100 improves the light output efficiency and uniformity of the micro-LED by reflecting and refracting the emitted light, but it may cause a certain degree of glare. A material with a relatively high haze can be used as the packaging film / cover plate 500 to eliminate the glare effect.

[0097] Fig.19 FIG. 4 shows a schematic cross-sectional structure diagram of another display panel provided in an embodiment of the present application. Fig.19 As shown, optionally, in some embodiments of the present application, it can be seen that the micro-LED 100 in the display panel includes a first micro-LED 101 and a second micro-LED 102, the first micro-LED 101 is used to emit a first primary color light, the second micro-LED 102 is used to emit a second primary color light, and the first primary color light and the second primary color light are different in color; the area of ​​the second region S12 of the first micro-LED 101 is different from the area of ​​the second region S12 of the second micro-LED 102.

[0098] Optionally, the width of the second region S12 of the first micro LED 101 can be set to be different from the width of the second region S12 of the second micro LED 102, so that the area of ​​the second region S12 of the first micro LED 101 is different from the area of ​​the second region S12 of the second micro LED 102.

[0099] It is understandable that, since the first micro-LED 101 emits the first primary color light, the second micro-LED 102 emits the second primary color light, and the first primary color light and the second primary color light are different in color, the first surface S1 of the first micro-LED 101 may have a different area from the first surface S1 of the second micro-LED 102, that is, the light emitting surface areas of the first micro-LED 101 and the second micro-LED 102 are different. Considering that black ink is more likely to climb to the top of the micro-LED with a larger area on the first surface S1, based on this, the area of ​​the second area S12 of the first micro-LED 101 is set to be different from the area of ​​the second area S12 of the second micro-LED 102. Specifically, a larger second area S12 can be set in the micro-LED with a larger area on the first surface S1, so that the problem of black ink climbing of the micro-LED with a larger area on the first surface S1 can be more effectively improved.

[0100] Since the first micro-LED 101 emits the first primary color light, the second micro-LED 102 emits the second primary color light, and the first primary color light and the second primary color light are different in color, there may be a difference in the luminous efficiency of the first micro-LED 101 and the second micro-LED 102. Based on this, in order to ensure the light extraction efficiency of the micro-LED with lower luminous efficiency, the area of ​​the second region S12 of the first micro-LED 101 is set to be different from the area of ​​the second region S12 of the second micro-LED 102. Specifically, a smaller second region S12 can be set in the micro-LED with lower luminous efficiency, while a relatively larger first region S11 can be set. In this way, the light extraction efficiency of the micro-LED with lower luminous efficiency can be more effectively improved, and the problem of black ink climbing can be improved.

[0101] Fig. 20 A schematic top view of a display panel provided in an embodiment of the present application is shown. Fig. 20 As shown, optionally, in some embodiments of the present application, the display panel includes a display area AA, the display area includes a first display area AA1 and a second display area AA2, and the area of ​​the second area S12 of the micro-LED 100 in the first display area AA1 is different from the area of ​​the second area S12 of the micro-LED 100 in the second display area AA2.

[0102] Optionally, the first display area AA1 may be the central area of ​​the display area AA, and the second display area AA2 may be the edge area of ​​the display area AA. Since when the black ink is printed between the micro-LEDs 100 using the inkjet printing process, the central area of ​​the display area AA of the display panel will have more ink, while the edge area of ​​the display area AA will have relatively less ink, therefore, the area of ​​the second area S12 of the micro-LED 100 in the first display area AA1 may be set to be different from the area of ​​the second area S12 of the micro-LED 100 in the second display area AA2. Specifically, the area of ​​the second area S12 of the micro-LED 100 located in the central area of ​​the display area AA may be set to be larger, while the area of ​​the second area S12 of the micro-LED 100 located in the edge area of ​​the display area AA may be set to be relatively smaller. In this way, the black ink slope of the micro-LED 100 located in the central area of ​​the display area AA may be reduced to a greater extent.

[0103] Accordingly, an embodiment of the present application further provides a display device, Fig.21 A schematic top view of a display device provided in an embodiment of the present application is shown. Fig.21 As shown, the display device 600 includes a display panel 700 provided by any of the above embodiments. Since the display panel 700 has been described in detail in the above embodiments, it will not be described again here.

[0104] The display device 600 can be any electronic device with a display function, such as a touch screen, a mobile phone, a tablet computer, a notebook computer, an e-reader, or a television.

[0105] The various parts in this manual are described in a combination of parallel and progressive ways. Each part focuses on the differences from other parts, and the same or similar parts between the various parts can be referenced to each other.

[0106] With respect to the above description of the disclosed embodiments, the features described in the embodiments in this specification may be replaced or combined with each other, so that professionals in the field can implement or use the present application. Various modifications to these embodiments will be apparent to professionals in the field, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A micro light emitting diode, characterized in that: Comprising: A semiconductor stack, the semiconductor stack including a first surface and a second surface disposed opposite to each other, the first surface including a first region and a second region, the second region at least partially surrounding the first region; The first region includes a plurality of first recesses recessed toward the second surface; the second region includes a plurality of second recesses recessed toward the second surface, the depth of the second recesses being less than the depth of the first recesses; alternatively, the second region is a clearance area, and the surface of the clearance area is a smooth surface.

2. The micro light emitting diode according to claim 1, characterized in that: The second region surrounds the first region.

3. The micro light emitting diode according to claim 2, characterized in that: The first surface includes a plurality of edges, and for any one of the edges, the width of the second region corresponding to the edge is greater than the maximum aperture of the first recesses, and the width of the second region corresponding to the edge is the minimum distance between the edge and the first recesses in the first region.

4. The micro light emitting diode according to claim 3, characterized in that: For any one of the edges, the width of the second region corresponding to the edge is not less than 4 μm.

5. The micro light emitting diode according to claim 3, characterized in that: The widths of the second regions corresponding to at least two of the edges are different.

6. The micro light emitting diode according to claim 5, characterized in that: The plurality of edges include four edges sequentially connected to form a rectangle, wherein the first edge and the third edge are disposed opposite to each other, the second edge and the fourth edge are disposed opposite to each other, and the length of the first edge is greater than the length of the second edge; The width of the second region corresponding to the first edge is a first width w1, the width of the second region corresponding to the second edge is a second width w2, the width of the second region corresponding to the third edge is a third width w3, and the width of the second region corresponding to the fourth edge is a fourth width w4; w2 > w1 and w2 > w3; w4 > w1 and w4 > w3.

7. The micro light emitting diode according to claim 6, characterized in that: The semiconductor stack includes a non-doped semiconductor layer, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence, and the active layer and the second-type semiconductor layer expose a part of the first-type semiconductor layer; The surface of the non-doped semiconductor layer facing away from the first-type semiconductor layer is the first surface, and the surface of the second-type semiconductor layer facing away from the active layer and the surfaces of the first-type semiconductor layer exposed by the active layer and the second-type semiconductor layer are the second surface; A first electrode is disposed on the surface of the first-type semiconductor layer exposed by the active layer and the second-type semiconductor layer, and a second electrode is disposed on the surface of the second-type semiconductor layer facing away from the active layer; The orthographic projection of the first electrode on the first surface is located on the side of the orthographic projection of the second electrode on the first surface close to the second edge, and the distance between the orthographic projection of the active layer on the first surface and the second edge is greater than the distance between the orthographic projection of the active layer on the first surface and the fourth edge; w2 < w4, or w2 > w4.

8. The micro light emitting diode according to claim 7, characterized in that: In the first surface S1, the second region corresponding to the second edge includes the second recesses, and the second region corresponding to the fourth edge is a clearance area.

9. The micro light emitting diode according to any one of claims 6 to 8, characterized in that: w1 ≠ w3.

10. The micro light emitting diode according to claim 1, characterized in that: The first recesses are arranged in a row along a first direction, and multiple rows of the first recesses are arranged along a second direction, and the first direction and the second direction intersect; The first recessed portions in alternate rows overlap along the second direction, and the first recessed portions in adjacent rows at least partially do not overlap along the second direction.

11. The micro light emitting diode according to claim 10, characterized in that: The plurality of first recessed portions are arranged such that geometric centers of the first recessed portions in the same row are located on the same horizontal line, geometric centers of the first recessed portions in alternate rows are located on the same vertical line, and geometric centers of the first recessed portions in adjacent rows are located on different vertical lines.

12. The micro light emitting diode according to claim 10 or 11, characterized in that: The second region includes the plurality of second recessed portions, and the second recessed portions and the first recessed portions are evenly arranged.

13. The micro light emitting diode according to claim 1, characterized in that: The second region includes the plurality of second recessed portions, the maximum aperture of the second recessed portions is smaller than the maximum aperture of the first recessed portions, and / or the distance between two adjacent second recessed portions is greater than the distance between two adjacent first recessed portions.

14. A display panel, characterized in that: include: An array substrate; a plurality of micro-LEDs bonded to the array substrate, wherein the micro-LEDs are the micro-LEDs according to any one of claims 1 to 13, and a first surface of the micro-LEDs is away from the array substrate relative to a second surface of the micro-LEDs; A light shielding layer is located on the array substrate and between the micro-LEDs, wherein a height of the light shielding layer relative to the array substrate is smaller than a height of the first surface of the micro-LEDs relative to the array substrate.

15. The display panel according to claim 14, characterized in that: The micro-LED comprises a first micro-LED and a second micro-LED, wherein the first micro-LED is used to emit a first primary color light, and the second micro-LED is used to emit a second primary color light, and the first primary color light and the second primary color light have different colors; An area of ​​the second region of the first micro light emitting diode is different from an area of ​​the second region of the second micro light emitting diode.

16. The display panel according to claim 14, characterized in that: The display panel includes a display area, the display area includes a first display area and a second display area, and an area of ​​the second region of the micro light emitting diode in the first display area is different from an area of ​​the second region of the micro light emitting diode in the second display area.

17. A display device, characterized in that: A display panel comprising any one of claims 14-16.

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