Window and display device including same

Abstract

The invention relates to a window and a display device including the same. The window includes: a base layer; and an anti-reflection layer disposed on the base layer. The anti-reflection layer includes: a first layer including a first material and having a first thickness; a second layer including a second material and having a second thickness; and a third layer including the first material and having a third thickness. The first material includes silicon (Si) atoms, aluminum (Al) atoms, and nitrogen (N) atoms, and the second material includes silicon oxide. Each of the first thickness and the second thickness ranges from about 10 nm to about 50 nm, and the third thickness ranges from about 400 nm to about 500 nm.

Description

[0001] This application claims priority to and all benefits derived from Korean Patent Application No. 10-2023-0139415, filed on October 18, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure herein relates to a window and a display device including the window, and more particularly, to a window and a display device including the window having low reflectivity and also having excellent mechanical characteristics. Background Art

[0003] Display devices are used in various multimedia devices such as televisions, mobile phones, tablet computers, and game consoles to provide image information to users. Recently, flexible display devices having various shapes and capable of being folded or bent have been developed. The flexible display device can be variously changed in shape, such as folded, curled, or bent, and thus has characteristics that support the portability of the device.

[0004] Some flexible display devices may include a foldable or bendable display panel and a window. However, the window of the flexible display device may be deformed due to the folding or bending operation, or may be easily damaged due to external impact. Summary of the invention

[0005] The present disclosure provides a window having low reflectivity and excellent mechanical properties.

[0006] The present disclosure also provides a display device having reflectivity maintained at a low level and having improved durability and reliability.

[0007] Embodiments supported by aspects of the present disclosure provide a window, the window comprising: a substrate layer; and an anti-reflection layer disposed on the substrate layer. The anti-reflection layer comprises: a first layer comprising a first material and having a first thickness; a second layer comprising a second material and having a second thickness; and a third layer comprising the first material and having a third thickness. The first material comprises silicon (Si) atoms, aluminum (Al) atoms, and nitrogen (N) atoms, and the second material comprises silicon oxide. Each of the first thickness and the second thickness ranges from about 10 nm to about 50 nm, and the third thickness ranges from about 400 nm to about 500 nm.

[0008] In an embodiment, each of the first layer and the third layer may have a refractive index ranging from about 1.7 to about 2.5, and the second layer may have a refractive index ranging from about 1.3 to about 1.7.

[0009] In an embodiment, the first layer may be disposed directly on the base layer, the second layer may be disposed directly on the first layer, and the third layer may be disposed directly on the second layer.

[0010] In an embodiment, the anti-reflection layer may further include a fourth layer directly disposed on the third layer and including the second material, and the fourth layer may have a refractive index ranging from about 1.4 to about 1.6.

[0011] In an implementation, the fourth layer may have a fourth thickness ranging from about 5 nm to about 15 nm.

[0012] In an embodiment, the anti-reflection layer may further include: a fifth layer directly disposed on the fourth layer and including the first material; and a sixth layer directly disposed on the fifth layer and including the second material. The fifth layer may have a refractive index of about 1.9 to about 2.5, and the sixth layer may have a refractive index ranging from about 1.4 to about 1.6.

[0013] In an implementation, the fifth layer may have a fifth thickness ranging from about 100 nm to about 200 nm, and the sixth layer may have a sixth thickness ranging from about 40 nm to about 100 nm.

[0014] In an embodiment, the sixth layer may include: a planarization layer disposed on the fifth layer; and a columnar layer disposed on the planarization layer. A plurality of uneven portions may be provided on a top surface of the columnar layer, and a surface roughness of the top surface of the columnar layer may be greater than a surface roughness of a top surface of the planarization layer.

[0015] In an embodiment, the planarization layer may have a refractive index ranging from about 1.4 to about 1.6, and the columnar layer may have a refractive index ranging from about 1.3 to about 1.5.

[0016] In an embodiment, the planarization layer may have a thickness of about 20 nm or less, and the columnar layer may have a thickness ranging from about 50 nm to about 100 nm.

[0017] In an embodiment, the atomic percentage of silicon in the first material may range from about 5 at % to about 20 at %.

[0018] In an embodiment, the first material may include a metal nanocomposite material including aluminum atoms, silicon atoms, and nitrogen atoms. The atomic percentage of aluminum (Al) and the atomic percentage of nitrogen (N) in the first material may each independently be about 5 at % or more and about 80 at % or less.

[0019] In an embodiment, the first material may include aluminum silicon oxynitride.

[0020] In an embodiment, the atomic percentage of oxygen in the first material may be about 20 at % or less.

[0021] In an embodiment, each of the first layer and the third layer may be a single layer including a first material, and the second layer may be a single layer including a second material.

[0022] In an embodiment, the anti-reflective layer may have a hardness of about 20 GPa or more at an indentation depth of about 100 nm.

[0023] In an embodiment, the anti-reflection layer may have a residual stress of about 2 GPa or less at a temperature of about 28°C.

[0024] In an embodiment, the window may further include: an anti-fingerprint layer disposed on the anti-reflection layer.

[0025] In an embodiment supported by aspects of the present disclosure, a display device includes: a display module; and a window disposed on the display module and including an anti-reflection layer. The anti-reflection layer includes: a first layer including a first material and having a refractive index ranging from about 1.7 to about 2.5; a second layer including a second material and having a refractive index ranging from about 1.3 to about 1.7; and a third layer including the first material and having a refractive index ranging from about 1.7 to about 2.5. The first material includes silicon (Si) atoms, aluminum (Al) atoms, and nitrogen (N) atoms, the second material includes silicon oxide, and the third layer has a thickness of about 400nm to about 500nm.

[0026] In an embodiment, a ratio of a thickness of the first layer to a thickness of the third layer may be about 0.1 or less, and a ratio of a thickness of the second layer to a thickness of the third layer may be about 0.1 or less. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The accompanying drawings are included to provide a further understanding of the embodiments supported by aspects of the present disclosure, and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate embodiments supported by aspects of the present disclosure, and together with the description, are used to explain the principles supported by aspects of the present disclosure. In the drawings:

[0028] Figure 1A is an assembled perspective view of a display device according to an embodiment supported by aspects of the present disclosure;

[0029] Figure 1B is an exploded perspective view of a display device according to an embodiment supported by aspects of the present disclosure;

[0030] Figure 2 is a cross-sectional view of a display device according to an embodiment supported by aspects of the present disclosure;

[0031] Figure 3 is a cross-sectional view illustrating a portion of a display module according to an embodiment supported by aspects of the present disclosure; and

[0032] FIG. 4A to FIG. 4D is a cross-sectional view of a window according to an embodiment supported by aspects of the present disclosure. DETAILED DESCRIPTION

[0033] In this specification, it will be understood that when an element (or region, layer or portion, etc.) is referred to as being "on" another element (or region, layer or portion, etc.), "connected to" or "coupled to" another element (or region, layer or portion, etc.), the element (or region, layer or portion, etc.) can be directly on, connected or coupled to the other element (or region, layer or portion, etc.), or a third element may be disposed between these elements.

[0034] The same reference numerals or symbols refer to the same elements throughout the text. In some aspects, in the drawings, the ratios and sizes (e.g., thickness) of the elements are exaggerated in order to effectively describe the technical content. The term "and / or" includes any and all combinations of one or more of the related listed items.

[0035] It will be understood that although the terms "first" and "second" etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. For example, without departing from the teachings of the present invention, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element. As used herein, the singular form is intended to also include the plural form, unless the context clearly indicates otherwise.

[0036] In some aspects, terms such as "lower", "below", "upper", and "above" are used to explain the relationship of elements illustrated in the drawings. These terms are relative concepts and are interpreted based on the directions illustrated in the drawings.

[0037] It will be further understood that terms such as “including” or “having” when used in this document specify the presence of stated features, numbers, steps, operations, elements, parts or any combination thereof, but do not preclude the presence or addition of one or more other features, numbers, steps, operations, elements, parts or any combination thereof.

[0038] As used herein, the term "about" or "approximately" includes the stated value and includes an appropriate range of deviations for the particular value determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity. For example, the term "about" may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0039] As used herein, the term "substantially" means approximately or practically. The term "substantially equal" means approximately or practically equal. The term "substantially the same" means approximately or practically the same. The term "substantially perpendicular" means approximately or practically perpendicular.

[0040] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. It will be further understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined as such in this article.

[0041] Hereinafter, embodiments supported by aspects of the present disclosure will be described with reference to the accompanying drawings.

[0042] Figure 1A is an assembled perspective view of a display device according to an embodiment supported by aspects of the present disclosure. Figure 1B is an exploded perspective view of a display device according to an embodiment supported by aspects of the present disclosure.

[0043] refer to Figure 1A and Figure 1B The display device DD may be a device activated in response to an electrical signal. The display device DD may display an image IM and detect an external input. The display device DD may include various embodiments. For example, the display device DD may include a computer (eg, a tablet computer, a notebook computer) and a smart TV, etc. In reference Figure 1A and Figure 1B In the described example embodiment, the display device DD is a smart phone, but is not limited thereto.

[0044] The display device DD may display an image IM in a third direction DR3 on a display surface FS parallel to each of the first direction DR1 and the second direction DR2. The display surface FS on which the image IM is displayed may correspond to the front surface of the display device DD, and the display surface FS may correspond to the front surface of the window WM. Hereinafter, the display surface FS and the front surface of the display device DD and the front surface of the window WM are denoted by the same reference numerals. The image IM may include a dynamic image and may also include a static image. Figure 1A A clock and a plurality of icons are explained as examples of the image IM.

[0045] In the present embodiment, the front surface (or top surface) and the rear surface (or bottom surface) of each of the components of the display device DD are defined based on the direction in which the image IM is displayed. The front surface and the rear surface may be opposite to each other in the third direction DR3, and the normal direction of each of the front surface and the rear surface may be parallel to the third direction DR3. The spacing distance between the front surface and the rear surface in the third direction DR3 may be the same as the display panel 100 (see Figure 2 ) corresponds to the thickness in the third direction DR3.

[0046] In some embodiments, the directions indicated by the first direction to the third direction DR1, DR2, and DR3 are relative concepts and can be changed to other directions. Hereinafter, the first direction to the third direction are directions indicated by the first direction to the third direction DR1, DR2, and DR3, and are represented by the same reference numerals, respectively. In some aspects, the phrase "on a plane" used herein may mean when observed in the third direction DR3.

[0047] The display device DD according to the embodiment supported by the aspects of the present disclosure can detect the user's input applied from the outside. The user's input includes various types of external inputs such as a part of the user's body, light, heat, a pen, or pressure. The user's input can be provided in various forms, and the display device DD can also detect the user's input applied to the side surface or rear surface of the display device DD based on the structure of the display device DD. However, the aspects of the present disclosure are not limited to any one embodiment.

[0048] like Figure 1B As shown in , the display device DD includes a window WM, a display module DM and a housing HU. In this embodiment, the window WM and the housing HU are combined to provide the appearance of the display device DD. In this embodiment, the housing HU, the display module DM and the window WM can be stacked sequentially in the third direction DR3.

[0049] The window WM may include an optically transparent material. The window WM may include an insulating panel. For example, the window WM may include glass, plastic, or any combination thereof.

[0050] As described herein, the front surface FS of the window WM defines the front surface of the display device DD. The transmission area TA of the window WM may be an optically transparent area. For example, the transmission area TA may be an area having a visible light transmittance of about 90% or more.

[0051] The bezel area BZA of the display device DD may be an area having relatively low light transmittance compared to the transmission area TA. The bezel area BZA defines the shape of the transmission area TA. The bezel area BZA may be adjacent to the transmission area TA and surround the transmission area TA.

[0052] The border area BZA may have a predetermined color. The border area BZA may cover the peripheral area NAA of the display module DM and prevent the peripheral area NAA from being seen from the outside. However, this is explained as an example, and in the window WM according to the embodiment supported by aspects of the present disclosure, the border area BZA may be omitted.

[0053] The display device DD may display an image IM and detect an external input. The image IM may be displayed on the front surface IS of the display module DM. The front surface IS of the display module DM includes an active area AA and a peripheral area NAA. The active area AA may be an area activated in response to an electrical signal.

[0054] In the present embodiment, the active area AA may be an area on which the image IM is displayed, and may also be an area through which an external input is detected. The transmissive area TA at least overlaps with the active area AA. For example, the transmissive area TA overlaps with the front surface or at least a portion of the active area AA. Accordingly, the user may see the image IM or provide an external input through the transmissive area TA. However, this is explained as an example. For example, in the active area AA, the area on which the image IM is displayed and the area through which the external input is detected may be separated from each other, and the embodiments supported by aspects of the present disclosure are not limited to any one embodiment.

[0055] The peripheral area NAA may be an area covered by the frame area BZA. The peripheral area NAA is adjacent to the active area AA. The peripheral area NAA may surround the active area AA. A driving circuit or driving line for driving the active area AA may be provided in the peripheral area NAA.

[0056] The display module DM may include a display panel and a sensor layer. The image IM may be substantially displayed on the display panel, and the external pressure may be substantially detected through the sensor layer. The display module DM may display the image IM and also detect the external input by including both the display panel and the sensor layer. This will be described in detail later.

[0057] The display device DD according to the embodiment may further include a driving circuit. The driving circuit may include a flexible circuit board and a main circuit board. The flexible circuit board may be electrically connected to the display module DM. The flexible circuit board may connect the display module DM to the main circuit board. However, this is explained as an example. For example, the flexible circuit board according to the embodiment supported by the aspects of the present disclosure may not be connected to the main circuit board, and the flexible circuit board may not be used, and a rigid circuit board may be used.

[0058] The flexible circuit board may be connected to the pads of the display module DM disposed in the peripheral area NAA. The flexible circuit board may provide the display module DM with an electrical signal for driving the display module DM. The electrical signal may be generated in the flexible circuit board or in the main circuit board. The main circuit board may include various driving circuits for driving the display module DM or connectors for power supply, etc. The main circuit board may be connected to the display module DM through the flexible circuit board.

[0059] although Figure 1B An example state in which the display module DM is unfolded (e.g., not folded, not bent) is explained, but at least a portion of the display module DM may be bent. For example, a portion of the display module DM may be bent toward the rear surface of the display module DM, and the portion bent toward the rear surface may be a portion connected to the main circuit board. Accordingly, the main circuit board may be assembled in a state in which the main circuit board overlaps the rear surface of the display module DM.

[0060] The housing HU is coupled to the window WM and defines the appearance of the display device DD. The housing HU provides a predetermined inner space. The display module DM may be accommodated in the inner space.

[0061] The housing HU may include a material having relatively high rigidity. For example, the housing HU may include glass, plastic, or metal, or include a plurality of frames and / or plates formed by any combination thereof. The housing HU may stably protect the components of the display device DD accommodated in the internal space from external impacts.

[0062] Figure 2 is a cross-sectional view of a display device according to an embodiment supported by aspects of the present disclosure.

[0063] refer to Figure 2 , the display device DD may include a display module DM and a window WM. The display module DM and the window WM may be bonded to each other by an adhesive layer AD. In the display device DD according to the embodiment, the display module DM may include a display panel 100, a sensor layer 200, and an optical layer 300. The optical layer 300 among the multiple layers of the display module DM may be bonded to the window WM by an adhesive layer AD.

[0064] The display panel 100 may be a component that basically generates an image. The display panel 100 may be a light-emitting display panel. For example, the display panel 100 may be an organic light-emitting display panel, an inorganic light-emitting display panel, a micro LED display panel, or a nano LED display panel. The display panel 100 may be referred to as a display layer.

[0065] The display panel 100 may include a base substrate 110 , a circuit layer 120 , a light emitting element layer 130 , and an encapsulation layer 140 .

[0066] The base substrate 110 may be a member that provides a base surface on which the circuit layer 120 is disposed. The base substrate 110 may be a rigid substrate or a flexible substrate that can be bent, folded, or rolled, etc. The base substrate 110 may be a glass substrate, a metal substrate, a polymer substrate, a plastic substrate, or a silicon substrate, etc. However, the embodiments of the present disclosure are not limited thereto, and the base substrate 110 may be an inorganic layer, an organic layer, or a composite material layer.

[0067] The base substrate 110 may have a multi-layer structure. For example, the base substrate 110 may include a first synthetic resin layer, a multi-layer or single-layer inorganic layer disposed on the first synthetic resin layer, and a second synthetic resin layer disposed on the multi-layer or single-layer inorganic layer. Each of the first synthetic resin layer and the second synthetic resin layer may include a polyimide-based resin and is not particularly limited.

[0068] The circuit layer 120 may be disposed on the base substrate 110. The circuit layer 120 may include an insulating layer, a semiconductor pattern, a conductive pattern, a signal line, and the like.

[0069] The light emitting element layer 130 may be disposed on the circuit layer 120. The light emitting element layer 130 may include a light emitting element. For example, the light emitting element may include an organic light emitting material, an inorganic light emitting material, an organic-inorganic light emitting material, a quantum dot, a quantum rod, a micro LED, or a nano LED.

[0070] The encapsulation layer 140 may be disposed on the light emitting element layer 130. The encapsulation layer 140 may protect the light emitting element layer 130 from moisture, oxygen, and foreign matter such as dust particles, for example. The encapsulation layer 140 may include at least one inorganic layer. The encapsulation layer 140 may include a stacked structure of inorganic layer / organic layer / inorganic layer.

[0071] The sensor layer 200 may be disposed on the display panel 100. The sensor layer 200 may detect an external input applied from the outside. The external input may be a user's input. The user's input may include various types of external inputs such as a part of the user's body, light, heat, a pen, or pressure, for example.

[0072] The sensor layer 200 may be formed on the display panel 100 through a continuous process. In this case, the sensor layer 200 may be directly disposed on the display panel 100. Here, the phrase "directly disposed" may mean that a third component is not disposed between the sensor layer 200 and the display panel 100. That is, in an example in which the sensor layer 200 is directly disposed on the display panel 100, a separate adhesive member may not be disposed between the sensor layer 200 and the display panel 100.

[0073] The optical layer 300 may be directly disposed on the sensor layer 200. The optical layer 300 may reduce the reflectivity of external light incident from the outside of the display device DD to the display device DD. The optical layer 300 may be formed on the sensor layer 200 by a continuous process. The optical layer 300 may include a color filter. The color filter may have a predetermined arrangement. For example, the color filter may be arranged based on the color of light emitted by the pixels included in the display panel 100. In some aspects, the optical layer 300 may further include a black matrix adjacent to the color filter. The optical layer 300 will be described in detail later.

[0074] In an embodiment supported by aspects of the present disclosure, the sensor layer 200 may be omitted. In this case, the optical layer 300 may be directly disposed on the display panel 100. In an embodiment supported by aspects of the present disclosure, the positions of the sensor layer 200 and the optical layer 300 may be exchanged with each other.

[0075] Although not illustrated, in an embodiment supported by aspects of the present disclosure, the display device DD may further include a functional layer disposed on the optical layer 300. For example, the functional layer may control the direction of light incident from the display panel 100 to the optical layer 300 to improve the front brightness of the display device DD.

[0076] The window WM may provide a front surface of the display device DD. The window WM may include a glass film or a synthetic resin film as a base film. The window WM may further include a functional layer such as an anti-reflection layer and / or an anti-fingerprint layer. Figure 4A and Figure 4B The functional layers included in the window WM are described in more detail. Although not illustrated, the window WM may further include a border area BZA (see Figure 1B )Overlapping border patterns.

[0077] Figure 3 is a cross-sectional view illustrating a portion of a display module according to an embodiment supported by aspects of the present disclosure. Figure 3 A partial cross section of a light emitting element LD and a pixel circuit PC included in a display module DM is illustrated. Figure 3 Components of the display module DM according to the present embodiment are described in detail.

[0078] The display panel 100 included in the display module DM according to the embodiment may include a base substrate 110. The base substrate 110 may be a member providing a base surface on which the circuit layer 120 is disposed. The base substrate 110 may be a glass substrate, a metal substrate, a polymer substrate, a plastic substrate, a silicon substrate, etc. However, the embodiments of the present disclosure are not limited thereto, and the base substrate 110 may be an inorganic layer, an organic layer, or a composite material layer.

[0079] The buffer layer 10br may be disposed on the base substrate 110. The buffer layer 10br may prevent a phenomenon in which metal atoms or impurities are dispersed from the base substrate 110 into the first semiconductor pattern SP1 above the buffer layer 10br. The first semiconductor pattern SP1 includes a channel region AC1 of a silicon transistor S-TFT. The buffer layer 10br may adjust a heat supply rate during a crystallization process of forming the first semiconductor pattern SP1 so that the first semiconductor pattern SP1 is uniformly formed.

[0080] The first semiconductor pattern SP1 may be disposed on the buffer layer 10br. The first semiconductor pattern SP1 may include a silicon semiconductor. For example, the silicon semiconductor may include amorphous silicon, polycrystalline silicon, or single crystal silicon, etc. For example, the first semiconductor pattern SP1 may include low temperature polycrystalline silicon.

[0081] Figure 3 The portion of the first semiconductor pattern SP1 disposed on the buffer layer 10br is illustrated, and the first semiconductor pattern SP1 may be further disposed in another region. The first semiconductor pattern SP1 may be arranged across pixels according to a specific rule or target configuration. The first semiconductor pattern SP1 may have different electrical characteristics based on whether the first semiconductor pattern SP1 is doped. The first semiconductor pattern SP1 may include a first region having high conductivity and a second region having low conductivity. The first region may be doped with an n-type dopant or a p-type dopant. A p-type transistor may include a doped region doped with a p-type dopant, and an n-type transistor may include a doped region doped with an n-type dopant. The second region may be an undoped region, or the second region may be doped to have a concentration lower than that of the first region.

[0082] The conductivity of the first region may be higher than that of the second region, and the first region may substantially serve as an electrode or a signal line. The second region may substantially correspond to an active region (or channel) of a transistor. In other words, a portion of the first semiconductor pattern SP1 may be an active region of the transistor, another portion of the first semiconductor pattern SP1 may be a source or drain of the transistor, and yet another portion of the first semiconductor pattern SP1 may be a connection electrode or a connection signal line.

[0083] A source region SE1 (or source), a channel region AC1 (or channel), and a drain region DE1 (or drain) of the silicon transistor S-TFT may be provided by the first semiconductor pattern SP1. In cross section, the source region SE1 and the drain region DE1 may extend from the channel region AC1 in opposite directions.

[0084] Although not illustrated, the rear metal layer may be below each of the silicon transistor S-TFT and the oxide transistor O-TFT. The rear metal layer may be arranged to overlap with the pixel circuit PC and may block external light from reaching the pixel circuit PC. The rear metal layer may be arranged between the base substrate 110 and the buffer layer 10br. Alternatively, the rear metal layer may be arranged between the second insulating layer 20 and the third insulating layer 30.

[0085] The rear metal layer may include a reflective metal. For example, the rear metal layer may include silver (Ag), a silver-containing alloy, molybdenum (Mo), a molybdenum-containing alloy, aluminum (Al), an aluminum-containing alloy, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), and p+-doped amorphous silicon, etc. The rear metal layer may be connected to an electrode or a wire, and the rear metal layer may receive a constant voltage or signal from the electrode or wire. According to an embodiment supported by aspects of the present disclosure, the rear metal layer may be a floating electrode having a shape isolated from another electrode or wire. In an embodiment supported by aspects of the present disclosure, an inorganic barrier layer may be further provided between the base substrate 110 and the buffer layer 10br.

[0086] The first insulating layer 10 may be disposed on the buffer layer 10br. The first insulating layer 10 may overlap with a plurality of pixels and cover the first semiconductor pattern SP1. The first insulating layer 10 may be an inorganic layer and / or an organic layer, and may have a single layer or multi-layer structure.

[0087] The first insulating layer 10 may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide. In the present embodiment, the first insulating layer 10 may be a silicon oxide layer having a single-layer structure. In addition to the first insulating layer 10, the insulating layer of the circuit layer 120 to be described later may be an inorganic layer and / or an organic layer, and may have a single-layer or multi-layer structure. The inorganic layer may include at least one of the aforementioned materials, but is not limited thereto.

[0088] The gate GT1 of the silicon transistor S-TFT is disposed on the first insulating layer 10. The gate GT1 may be a part of the metal pattern. The gate GT1 overlaps with the channel region AC1. The gate GT1 may function as a mask in the process of doping the first semiconductor pattern SP1. For example, the gate GT1 may include titanium (Ti), silver (Ag), silver-containing alloys, molybdenum (Mo), molybdenum-containing alloys, aluminum (Al), aluminum-containing alloys, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), indium tin oxide (ITO) or indium zinc oxide (IZO), etc., but is not particularly limited thereto.

[0089] The second insulating layer 20 may be disposed on the first insulating layer 10 and cover the gate GT1. The third insulating layer 30 may be disposed on the second insulating layer 20. The second electrode CE20 of the storage capacitor Cst may be disposed between the second insulating layer 20 and the third insulating layer 30. In some aspects, the first electrode CE10 of the storage capacitor Cst may be disposed between the first insulating layer 10 and the second insulating layer 20.

[0090] The second semiconductor pattern SP2 may be disposed on the third insulating layer 30. The second semiconductor pattern SP2 may include a channel region AC2 of an oxide transistor O-TFT to be described later. The second semiconductor pattern SP2 may include an oxide semiconductor. The second semiconductor pattern SP2 may include an indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zinc oxide (ZnO), or indium oxide (In 2 O 3 ) as an example of a transparent conductive oxide (TCO).

[0091] The oxide semiconductor may include a plurality of regions divided according to whether the transparent conductive oxide is reduced. The region in which the transparent conductive oxide is reduced (hereinafter, referred to as the reduction region) has a greater conductivity than the region in which the transparent conductive oxide is not reduced (hereinafter, referred to as the non-reduction region). The reduction region basically acts as a source / drain or a signal line of the transistor. The non-reduction region basically corresponds to the semiconductor region (or channel) of the transistor. In other words, a partial region of the second semiconductor pattern SP2 may be a semiconductor region of the transistor, another partial region of the second semiconductor pattern SP2 may be a source / drain region of the transistor, and another portion of the second semiconductor pattern SP2 may be a signal transmission region.

[0092] The source region SE2 (or source), the channel region AC2 (or channel), and the drain region DE2 (drain) of the oxide transistor O-TFT may be provided by the second semiconductor pattern SP2. In cross section, the source region SE2 and the drain region DE2 may extend in opposite directions from the channel region AC2.

[0093] The fourth insulating layer 40 may be disposed on the third insulating layer 30. The fourth insulating layer 40 may overlap with the plurality of pixels and cover the second semiconductor pattern SP2. Although not illustrated, the fourth insulating layer 40 may be provided in the form of an insulating pattern overlapping with the gate electrode GT2 of the oxide transistor O-TFT and exposing each of the source region SE2 and the drain region DE2 of the oxide transistor O-TFT.

[0094] The gate GT2 of the oxide transistor O-TFT is disposed on the fourth insulating layer 40. The gate GT2 of the oxide transistor O-TFT may be a part of the metal pattern. The gate GT2 of the oxide transistor O-TFT overlaps the channel region AC2.

[0095] The fifth insulating layer 50 may be disposed on the fourth insulating layer 40 and cover the gate GT2. The first connection electrode CNE1 may be disposed on the fifth insulating layer 50. The first connection electrode CNE1 may be connected to the drain region DE1 of the silicon transistor S-TFT through a contact hole passing through the first to fifth insulating layers 10, 20, 30, 40, and 50.

[0096] The sixth insulating layer 60 may be disposed on the fifth insulating layer 50. The second connection electrode CNE2 may be disposed on the sixth insulating layer 60. The second connection electrode CNE2 may be connected to the first connection electrode CNE1 through a contact hole passing through the sixth insulating layer 60. The seventh insulating layer 70 may be disposed on the sixth insulating layer 60 and cover the second connection electrode CNE2. The eighth insulating layer 80 may be disposed on the seventh insulating layer 70.

[0097] Each of the sixth insulating layer 60, the seventh insulating layer 70, and the eighth insulating layer 80 may be an organic layer. For example, each of the sixth insulating layer 60, the seventh insulating layer 70, and the eighth insulating layer 80 may include a general polymer such as benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethylmethacrylate (PMMA), or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, or a mixture thereof.

[0098] The light emitting element LD may include a first electrode AE ​​(or a pixel electrode), an emission layer EML, and a second electrode CE (or a common electrode). Each of the emission layer EML and the second electrode CE may be commonly provided in a plurality of pixels.

[0099] The first electrode AE ​​of the light-emitting element LD may be disposed on the eighth insulating layer 80. The first electrode AE ​​of the light-emitting element LD may be a (semi) transmissive electrode or a reflective electrode. According to an embodiment supported by aspects of the present disclosure, the first electrode AE ​​of the light-emitting element LD may include a reflective layer formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a compound thereof and a transparent or semi-transparent electrode layer provided on the reflective layer. The transparent or semi-transparent electrode layer may include an electrode selected from indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zinc oxide (ZnO), indium oxide (In 2 O 3) and aluminum-doped zinc oxide (AZO). For example, the first electrode AE ​​of the light emitting element LD may include a stacked structure of ITO / Ag / ITO.

[0100] The pixel defining film PDL may be disposed on the eighth insulating layer 80. The pixel defining film PDL may include the same material and be formed by the same process. The pixel defining film PDL may have light absorption characteristics, and for example, the pixel defining film PDL may have a black color. The pixel defining film PDL may include a black colorant. The black colorant may include a black dye and / or a black pigment. The black colorant may include carbon black, a metal such as chromium, or an oxide thereof. The pixel defining film PDL may correspond to a light blocking pattern having a light blocking characteristic.

[0101] The pixel defining film PDL may cover a portion of the first electrode AE ​​of the light emitting element LD. For example, an opening PDL-OP exposing a portion of the first electrode AE ​​of the light emitting element LD may be defined in the pixel defining film PDL. The pixel defining film PDL may increase the distance between the second electrode CE of the light emitting element LD and the edge of the first electrode AE. Therefore, for example, the pixel defining film PDL may be used to prevent arcing, etc., from occurring at the edge of the first electrode AE.

[0102] Although not illustrated, the hole control layer may be disposed between the first electrode AE ​​and the emission layer EML. The hole control layer may include a hole transport layer and a hole injection layer. The electron control layer may be disposed between the emission layer EML and the second electrode CE. The electron control layer may include an electron transport layer and an electron injection layer. The hole control layer and the electron control layer may be formed together in a plurality of pixels by using an open mask.

[0103] The encapsulation layer 140 may be disposed on the light emitting element layer 130. The encapsulation layer 140 may include an inorganic layer 141, an organic layer 142, and an inorganic layer 143 which are sequentially stacked, but the layers constituting the encapsulation layer 140 are not limited thereto.

[0104] The inorganic layer 141 and the inorganic layer 143 can protect the light emitting element layer 130 from moisture and oxygen, and the organic layer 142 can protect the light emitting element layer 130 from foreign matter such as dust particles. The inorganic layer 141 and the inorganic layer 143 may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer, etc. The organic layer 142 may include an acrylic organic layer, and is not limited thereto.

[0105] The sensor layer 200 may be disposed on the display panel 100. The sensor layer 200 may be referred to as a sensor, an input detection layer, or an input detection panel. The sensor layer 200 may include a sensor base layer 210, a first conductive layer 220, a detection insulating layer 230, and a second conductive layer 240.

[0106] The sensor base layer 210 may be directly disposed on the display panel 100. The sensor base layer 210 may be an inorganic layer including at least one of silicon nitride, silicon oxynitride, and silicon oxide. Alternatively, the sensor base layer 210 may be an organic layer including epoxy resin, acrylic resin, or imide resin. The sensor base layer 210 may have a single-layer structure. In another example, the sensor base layer 210 may have a multi-layer structure in which layers are stacked in the third direction DR3.

[0107] Each of the first conductive layer 220 and the second conductive layer 240 may have a single-layer structure. In another example, each of the first conductive layer 220 and the second conductive layer 240 may have a multilayer structure in which layers are stacked in the third direction DR3. The first conductive layer 220 and the second conductive layer 240 may include conductive wires defining a grid-shaped detection electrode. The conductive wires may not overlap with the opening PDL-OP, and the conductive wires may overlap with the pixel definition film PDL.

[0108] The conductive layer having a single-layer structure may include a metal layer or a transparent conductive layer. The metal layer may include molybdenum, silver, titanium, copper, aluminum or an alloy thereof. The transparent conductive layer may include a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium zinc tin oxide (IZTO). In some aspects, the transparent conductive layer may include a conductive polymer such as poly 3,4-ethylenedioxythiophene (PEDOT), a metal nanowire or graphene.

[0109] The conductive layer having a multi-layer structure may include a metal layer. The metal layer may have a three-layer structure of, for example, titanium / aluminum / titanium. The conductive layer having a multi-layer structure may include at least one metal layer and at least one transparent conductive layer.

[0110] The detection insulating layer 230 may be disposed between the first conductive layer 220 and the second conductive layer 240. The detection insulating layer 230 may include an inorganic film. The inorganic film may include at least one of aluminum oxide, titanium oxide, silicon oxide, silicon nitride, silicon oxynitride, zirconium oxide, and hafnium oxide.

[0111] Alternatively, the detection insulating layer 230 may include an organic film. The organic film may include at least one of acrylic resin (e.g., methacrylic resin), polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, siloxane resin, polyimide resin, polyamide resin, and perylene resin.

[0112] The optical layer 300 may be disposed on the sensor layer 200. The optical layer 300 may include a light blocking pattern 310, a color filter 320, and a planarization layer 330.

[0113] The optical layer 300 may reduce external light reflectivity. The optical layer 300 may include a color filter 320. The color filter 320 may be provided in plurality, and the plurality of color filters 320 may be set according to a predetermined arrangement based on the color of light emitted by the pixels included in the display panel 100. In the display module DM according to the embodiment, the optical layer 300 may not include a retarder and a polarizer, and the optical layer 300 may reduce the reflectivity of the display module DM through the color filter 320. In the display module DM according to the embodiment, the optical layer 300 may not include a polarizing film or a polarizing layer.

[0114] As long as the material constituting the light blocking pattern 310 is a material that absorbs light, the material is not particularly limited. The light blocking pattern 310 may be a layer having a black color, and in an embodiment, the light blocking pattern 310 may include a black colorant. The black colorant may include a black dye and / or a black pigment. The black colorant may include carbon black, a metal such as chromium, or an oxide thereof.

[0115] The light blocking pattern 310 may cover the second conductive layer 240 of the sensor layer 200. The light blocking pattern 310 may prevent external light from being reflected by the second conductive layer 240. The light blocking pattern 310 may overlap a portion of the pixel defining layer PDL.

[0116] A split opening 310-OP2 may be defined in the light blocking pattern 310. The split opening 310-OP2 may overlap with the first electrode AE ​​of the light emitting element LD. Regarding the color filters 320, each color filter 320 may overlap with the first electrode AE ​​of the light emitting element LD corresponding to the color filter 320. Regarding the color filters 320, each color filter 320 may cover the split opening 310-OP2 corresponding to the color filter 320. Each of the plurality of color filters 320 may be in contact with the light blocking pattern 310.

[0117] The planarization layer 330 may cover the light blocking pattern 310 and the plurality of color filters 320. The planarization layer 330 may include an organic substance, and may provide a flat surface on a top surface of the planarization layer 330. In an embodiment supported by aspects of the present disclosure, the planarization layer 330 may be omitted.

[0118] FIG. 4A to FIG. 4D is a cross-sectional view of a window according to an embodiment supported by aspects of the present disclosure.

[0119] refer to Figure 4A , the window WM according to an embodiment supported by aspects of the present disclosure includes a base layer BL and an anti-reflection layer ARL disposed on the base layer BL.

[0120] The base layer BL may include a transparent material. In an embodiment, the base layer may be a glass substrate or a polymer film. In an embodiment, the base layer BL may be a chemically strengthened glass substrate. In an example where the base layer BL is a chemically strengthened glass substrate, the use of the chemically strengthened glass substrate may support a reduction in thickness and an increase in mechanical strength of the base layer BL. Accordingly, the base layer BL may be used for a window of a foldable display device.

[0121] In an example where the base layer BL includes a polymer film, the base layer BL may include a polyimide (PI) film or a polyethylene terephthalate (PET) film. The base layer BL of the window WM may have a multilayer structure or a single layer structure. For example, the base layer BL may have a structure in which a plurality of polymer films are bonded to each other by an adhesive member, or the base layer BL may have a structure in which a glass substrate and a polymer film are bonded to each other by an adhesive. The base layer BL may be formed of a flexible material.

[0122] The base layer BL may have a thickness of, for example, about 20 μm to about 60 μm. Preferably, the thickness of the base layer BL may range from about 20 μm to about 40 μm. FIG. 4A to FIG. 4D An example in which the base layer BL has a rectangular shape in cross section is explained, but the base layer BL is not limited thereto. For example, the base layer BL according to the embodiment may have a shape in which an edge portion of the top surface of the base layer BL is rounded by a curved surface. More specifically, the base layer BL may have a shape in which the edge portion of the top surface of the base layer BL is rounded by a curved surface. Figure 1B ) The overlapping edge portions are rounded by a curved surface.

[0123] The anti-reflection layer ARL includes a first layer L1, a second layer L2, and a third layer L3. In the window WM according to the embodiment, the base layer BL, the first layer L1, the second layer L2, and the third layer L3 may be sequentially stacked.

[0124] The first layer L1 may be disposed on the base layer BL. In the present embodiment, the first layer L1 may be directly disposed on the base layer BL. A bottom surface of the first layer L1 may be in contact with a top surface of the base layer BL.

[0125] The first layer L1 may have a refractive index higher than that of the base layer BL. The first layer L1 may have a refractive index equal to or higher than that of the second layer L2 to be described later. Among the layers of the anti-reflection layer ARL, the first layer L1 may have the highest refractive index. The refractive index of the first layer L1 may range from about 1.7 to about 2.5. The "refractive index" of the layer described herein may mean "the refractive index of the layer at a wavelength of about 550nm". For example, the refractive index of the first layer L1 at a wavelength of about 550nm may range from about 1.7 to about 2.5. In another example, the refractive index of the first layer L1 may range from about 1.9 to about 2.3. Due to the high refractive index characteristics of the first layer L1, the surface reflectivity of the window WM may be reduced. The structure of the window WM according to the present embodiment (wherein the first layer L1 having a high refractive index characteristic is stacked on the base layer BL and the second layer L2 having a low refractive index characteristic and the third layer L3 having a high refractive index characteristic are sequentially stacked on the first layer L1) may support the reduced surface reflectivity of the window WM.

[0126] The first layer L1 may include a first material. The first material includes silicon (Si) atoms, aluminum (Al) atoms, and nitrogen (N) atoms. The first material may include aluminum silicon nitride. The first material may include a metal nanocomposite material including silicon atoms, aluminum atoms, and nitrogen atoms. The first material may include an Al-Si-N nanocomposite material. The first material may include aluminum silicon oxynitride. The first material may include a material obtained by oxidation of aluminum silicon nitride. The first material may include a material obtained by oxidation of at least a portion of a nanocomposite material including silicon atoms, aluminum atoms, and nitrogen atoms. Alternatively, the first material may include both aluminum silicon nitride and aluminum silicon oxynitride.

[0127] The atomic percentage of silicon in the first material may range from about 5 at % to about 20 at %. In a comparative example in which the atomic percentage of silicon in the first material is greater than about 20 at %, the metal nitride lattice may be changed, and accordingly, the film stress of the first layer L1 including the first material may increase, thereby reducing the reliability of the window WM. In an example in which the first material includes oxygen atoms, the atomic percentage of oxygen may be about 20 at % or less. In a comparative example in which the atomic percentage of oxygen in the first material is greater than about 20 at %, the high refractive index characteristics of the first layer L1 including the first material may be reduced, thereby reducing the reliability of the window WM.

[0128] The first layer L1 may have a single-layer structure. That is, in some examples, the first layer L1 may not include a plurality of layers. The first layer L1 may be a single layer including a first material as described herein.

[0129] The first layer L1 may be formed by reactive sputtering. For example, the first layer L1 may be formed by radio frequency sputtering. The first layer L1 may be formed by including aluminum and silicon as target materials and adding nitrogen (N 2 ) as a reactive gas. The first layer L1 may be formed by radio frequency sputtering in which an aluminum silicon alloy is used as a target material and nitrogen is added as a reactive gas. Since the first layer L1 is formed by sputtering as described herein, the first layer L1 may include the first material. However, the method for forming the first layer L1 is not limited to the method described herein. For example, the first layer L1 may be formed to include the first material by various evaporation methods such as, for example, a thermal evaporation process or an electron beam evaporation process.

[0130] The first layer L1 has a first thickness d1 in the third direction DR3. The first thickness d1 may range from about 10 nm to about 50 nm. For example, the first thickness d1 may range from about 15 nm to about 25 nm. In a comparative example in which the first thickness d1 is less than 10 nm, the surface reflectivity of the window WM may not be sufficiently reduced (for example, the surface reflectivity may not meet the target surface reflectivity). In a comparative example in which the first thickness d1 is greater than 50 nm, the reflection color of the window WM may be affected, and the total thickness of the display device DD may be excessively increased or exceed the display device DD (see Figure 1A )’s target thickness.

[0131] The second layer L2 may be disposed on the first layer L1. In an embodiment, the second layer L2 may be disposed directly on the first layer L1. A bottom surface of the second layer L2 may be in contact with a top surface of the first layer L1.

[0132] The second layer L2 may have a refractive index equal to or lower than that of the first layer L1. For example, the refractive index of the second layer L2 at a wavelength of about 550 nm may range from about 1.3 to about 1.7. In an example, the refractive index of the second layer L2 at a wavelength of about 550 nm may range from about 1.41 to about 1.56. Due to the low refractive index characteristics of the second layer L2, the surface reflectivity of the window WM may be reduced.

[0133] The second layer L2 includes a second material. The second material includes silicon oxide. The second material may include silicon dioxide (SiO 2In an embodiment, the second layer L2 may have a single-layer structure. That is, in some examples, the second layer L2 may not include a plurality of layers. The second layer L2 may be a single layer including the second material. For example, the second layer L2 may have a structure composed of silicon dioxide (SiO 2 ) formed a single-layer structure.

[0134] The second layer L2 may be formed by sputtering. For example, the second layer L2 may be formed by radio frequency sputtering. However, the method for forming the second layer L2 is not limited to the method described herein. For example, the second layer L2 may be formed to include the second material by various evaporation methods such as thermal evaporation or electron beam evaporation.

[0135] The second layer L2 has a second thickness d2 in the third direction DR3. The second thickness d2 may range from about 10 nm to about 50 nm. For example, the second thickness d2 may range from about 18 nm to about 33 nm. In a comparative example in which the second thickness d2 is less than 10 nm, the surface reflectivity of the window WM may not be sufficiently reduced (for example, the surface reflectivity may not meet the target surface reflectivity). In a comparative example in which the second thickness d2 is greater than 50 nm, the reflection color of the window WM may be affected, and the total thickness of the display device DD may be excessively increased or exceed the display device DD (see FIG. 2 ). Figure 1A )’s target thickness.

[0136] The third layer L3 may be disposed on the second layer L2. In an embodiment, the third layer L3 may be disposed directly on the second layer L2. A bottom surface of the third layer L3 may be in contact with a top surface of the second layer L2.

[0137] The third layer L3 may have a refractive index equal to or higher than that of the second layer L2. The refractive index of the third layer L3 may be substantially the same as that of the first layer L1. The refractive index of the third layer L3 may range from about 1.7 to about 2.5. For example, the refractive index of the third layer L3 at a wavelength of about 550 nm may range from about 1.9 to about 2.3.

[0138] The third layer L3 includes the first material. The third layer L3 may include the same material as the material included in the first layer L1. The third layer L3 may have a single-layer structure. That is, in some examples, the third layer L3 may not include a plurality of layers. The third layer L3 may be a single layer including the first material.

[0139] The third layer L3 may be formed by reactive sputtering. The third layer L3 may be formed by the same process as that of forming the first layer L1.

[0140] The third layer L3 has a third thickness d3 in the third direction DR3. The third layer L3 may be formed by the same process as that of the first layer L1, and may include the same material as that included in the first layer L1, but in some examples, the third thickness d3 may be different from the first thickness d1. The range of the ratio of the first thickness d1 to the third thickness d3 may be about 0.1 or less. For example, the range of the ratio of the first thickness d1 to the third thickness d3 may be about 0.01 to about 0.1 or about 0.02 to about 0.07. The range of the ratio of the second thickness d2 to the third thickness d3 may be about 0.1 or less. For example, the range of the ratio of the second thickness d2 to the third thickness d3 may be about 0.01 to about 0.1 or about 0.03 to about 0.08.

[0141] The third thickness d3 may be in a range of about 400 nm to about 500 nm. For example, the third thickness d3 may be in a range of about 410 nm to about 490 nm. In a comparative example in which the third thickness d3 is less than 400 nm, the hardness value of the anti-reflection layer ARL may be relatively reduced, thereby reducing the reliability of the window WM. In a comparative example in which the third thickness d3 is greater than 500 nm, the reflection color of the window WM may be affected, and the total thickness of the display device DD may be excessively increased or exceed the display device DD (see FIG. 1 ). Figure 1A )’s target thickness.

[0142] refer to Figure 4B , the window WM-1 according to the embodiment supported by aspects of the present disclosure includes an anti-reflection layer ARL-1. In an embodiment, the anti-reflection layer ARL-1 may include the first to third layers L1, L2, and L3 described herein, and further include fourth to sixth layers L4, L5, and L6. In the anti-reflection layer ARL-1 according to the embodiment, the fourth to sixth layers L4, L5, and L6 may be sequentially stacked on the third layer L3.

[0143] The fourth layer L4 may be disposed on the third layer L3. In an embodiment, the fourth layer L4 may be disposed directly on the third layer L3. A bottom surface of the fourth layer L4 may contact a top surface of the third layer L3.

[0144] The fourth layer L4 may have a refractive index lower than that of the third layer L3. The refractive index of the fourth layer L4 may be substantially the same as that of the second layer L2. The refractive index of the fourth layer L4 may range from about 1.4 to about 1.6. For example, the refractive index of the fourth layer L4 at a wavelength of about 550 nm may range from about 1.41 to about 1.56.

[0145] The fourth layer L4 may include the second material. The fourth layer L4 may include the same material as the material included in the second layer L2. The fourth layer L4 may have a single-layer structure. That is, in some examples, the fourth layer L4 may not include a plurality of layers. The fourth layer L4 may be a single layer including the second material.

[0146] The fourth layer L4 has a fourth thickness d4 in the third direction DR3. The fourth layer L4 may be formed by the same process as that of the second layer L2 and may include the same material as that included in the second layer L2, but in some examples, the fourth thickness d4 may be different from the second thickness d2. The fourth thickness d4 may range from about 5 nm to about 15 nm.

[0147] The fourth layer L4 may be formed by sputtering. The fourth layer L4 may be formed by the same process as the process of forming the second layer L2.

[0148] The fifth layer L5 may be disposed on the fourth layer L4. In an embodiment, the fifth layer L5 may be disposed directly on the fourth layer L4. A bottom surface of the fifth layer L5 may contact a top surface of the fourth layer L4.

[0149] The fifth layer L5 may have a refractive index higher than that of the fourth layer L4. The refractive index of the fifth layer L5 may be substantially the same as each of the refractive index of the first layer L1 and the refractive index of the third layer L3. The refractive index of the fifth layer L5 may range from about 1.9 to about 2.5. For example, the refractive index of the fifth layer L5 at a wavelength of about 550 nm may range from about 1.9 to about 2.3.

[0150] The fifth layer L5 may include the first material. The fifth layer L5 may include the same material as each of the material included in the first layer L1 and the material included in the third layer L3. The fifth layer L5 may have a single-layer structure. That is, in some examples, the fifth layer L5 may not include a plurality of layers. The fifth layer L5 may be a single layer including the first material.

[0151] The fifth layer L5 has a fifth thickness d5 in the third direction DR3. The fifth layer L5 may be formed by the same process as each of the process of the first layer L1 and the process of the third layer L3, and may include the same material as each of the material included in the first layer L1 and the material included in the third layer L3, but in some examples, the fifth thickness d5 may be different from each of the first thickness d1 and the third thickness d3. The fifth thickness d5 may range from about 100 nm to about 200 nm. For example, the fifth thickness d5 may range from about 130 nm to about 160 nm.

[0152] The fifth layer L5 may be formed by reactive sputtering.The fifth layer L5 may be formed by the same process as each of the process of forming the first layer L1 and the process of forming the third layer L3.

[0153] The sixth layer L6 may be disposed on the fifth layer L5. In an embodiment, the sixth layer L6 may be disposed directly on the fifth layer L5. A bottom surface of the sixth layer L6 may contact a top surface of the fifth layer L5.

[0154] The sixth layer L6 may have a refractive index lower than that of the fifth layer L5. The refractive index of the sixth layer L6 may be substantially the same as that of the fourth layer L4. The refractive index of the sixth layer L6 may range from about 1.4 to about 1.6. For example, the refractive index of the sixth layer L6 at a wavelength of about 550 nm may range from about 1.41 to about 1.56.

[0155] The sixth layer L6 may include the second material. The sixth layer L6 may include the same material as each of the material included in the second layer L2 and the material included in the fourth layer L4. The sixth layer L6 may have a single-layer structure. The sixth layer L6 may be a single layer including the second material.

[0156] The sixth layer L6 has a sixth thickness d6 in the third direction DR3. The sixth layer L6 may be formed by the same process as each of the process of the second layer L2 and the process of the fourth layer L4 and may include the same material as each of the material included in the second layer L2 and the material included in the fourth layer L4, but in some examples, the sixth thickness d6 may be different from each of the second thickness d2 and the fourth thickness d4. The sixth thickness d6 may range from about 40 nm to about 100 nm. For example, the sixth thickness d6 may range from about 72 nm to about 98 nm.

[0157] The sixth layer L6 may be formed by sputtering.The sixth layer L6 may be formed by the same process as each of the process of forming the second layer L2 and the process of forming the fourth layer L4.

[0158] When measured at an indentation depth of about 100 nm by a Berkovich indenter hardness test using a nanoindenter, the anti-reflection layer ARL-1 may have a hardness of about 20 GPa or more. The hardness of the anti-reflection layer ARL-1 measured at an indentation depth of 100 nm may range from about 23 GPa to about 40 GPa. When measured at an indentation depth of about 50 nm to about 150 nm by a Berkovich indenter hardness test using a nanoindenter, the hardness of the anti-reflection layer ARL-1 may range from about 15 GPa to about 50 GPa. Since the anti-reflection layer ARL-1 includes a first layer L1 including a first material and having a first thickness d1, a second layer L2 including a second material and having a second thickness d2, and a third layer L3 including a first material and having a third thickness d3, the anti-reflection layer ARL-1 may have a high hardness value (e.g., a hardness value exceeding a threshold value). Accordingly, the window WM-1 including the anti-reflection layer ARL-1 may have improved reliability.

[0159] The anti-reflection layer ARL-1 may have a residual stress of about 2 GPa or less at a temperature of about 28°C. The anti-reflection layer ARL-1 may have a residual stress of about 0.1 GPa to about 2 GPa at a temperature of about 28°C. For example, the anti-reflection layer ARL-1 may have a residual stress of about 0.1 GPa to about 1 GPa at a temperature of about 28°C. Since the anti-reflection layer ARL-1 includes a first layer L1 including a first material and having a first thickness d1, a second layer L2 including a second material and having a second thickness d2, and a third layer L3 including the first material and having a third thickness d3, the anti-reflection layer ARL-1 may have a low residual stress value. Accordingly, the window WM-1 including the anti-reflection layer ARL-1 may have improved reliability.

[0160] refer to Figure 4C The window WM-2 according to the embodiment supported by aspects of the present disclosure may further include an anti-fingerprint layer AF disposed on the anti-reflection layer ARL-1.

[0161] The anti-fingerprint layer AF may be a layer that improves the sliding properties and scratch resistance of the surface, etc. The anti-fingerprint layer AF may have excellent anti-fingerprint properties and suppress surface wear. The anti-fingerprint layer AF may be a functional layer in which an anti-fingerprint material is added to a hard coating material. The anti-fingerprint layer AF may include a fluorine-containing compound. For example, the anti-fingerprint layer AF may include a perfluoropolyether (PFPE) compound. Alternatively, the anti-fingerprint layer AF may include a silane compound including perfluoropolyether. The anti-fingerprint layer AF may have a thickness of about 10 nm to about 40 nm. The anti-fingerprint layer AF may be formed by one of an electron beam evaporation process, a thermal evaporation process, and a sputtering process.

[0162] Although not in Figure 4C , but the window according to the embodiment supported by the aspects of the present disclosure may further include a separate adhesive layer between the anti-fingerprint layer AF and the anti-reflection layer ARL-1. For example, the window WM-2 according to the embodiment may further include an adhesive layer such as an optically clear adhesive (OCA) and / or a pressure-sensitive adhesive (PSA) between the anti-fingerprint layer AF and the anti-reflection layer ARL-1. However, the window WM-2 according to the embodiment is not limited thereto.

[0163] refer to Figure 4D , the window WM-3 according to an embodiment supported by aspects of the present disclosure includes an anti-reflection layer ARL-2. In an embodiment, the anti-reflection layer ARL-2 according to another embodiment may include the first to fifth layers L1, L2, L3, L4 and L5 described herein and the sixth layer L6-1.

[0164] In an embodiment, the sixth layer L6-1 may include a plurality of layers. The sixth layer L6-1 may include a planarization layer PL and a columnar layer CL. The sixth layer L6-1 may include a planarization layer PL and a columnar layer CL sequentially disposed on the fifth layer L5. The sixth layer L6-1 may have a two-layer structure including a planarization layer PL directly disposed on the fifth layer L5 and a columnar layer CL directly disposed on the planarization layer PL.

[0165] The sixth layer L6-1 may have a refractive index lower than that of the fifth layer L5. The refractive index of the planarization layer PL may be substantially the same as that of the fourth layer L4. The refractive index of the planarization layer PL may range from about 1.4 to about 1.6. For example, the refractive index of the planarization layer PL at a wavelength of about 550 nm may range from about 1.41 to about 1.56. The columnar layer CL may have a refractive index lower than that of the planarization layer PL. The refractive index of the columnar layer CL may range from about 1.3 to about 1.5. For example, the refractive index of the columnar layer CL at a wavelength of about 550 nm may range from about 1.32 to about 1.50.

[0166] The sixth layer L6-1 may include the second material. The sixth layer L6-1 may include the same material as each of the material included in the second layer L2 and the material included in the fourth layer L4. Each of the planarization layer PL and the columnar layer CL may include the second material. For example, each of the planarization layer PL and the columnar layer CL may include silicon dioxide (SiO 2 ).

[0167] In the sixth layer L6-1, the planarization layer PL may have a seventh thickness d in the third direction DR3. a . The seventh thickness d a It can be about 20 nm or less. For example, the seventh thickness da The columnar layer CL may have an eighth thickness d in the third direction DR3. b . The eighth thickness d b The range of can be about 50nm to about 100nm. For example, the eighth thickness d b The range of may be about 72 nm to about 98 nm.

[0168] In the sixth layer L6-1, the surface roughness of the top surface of the columnar layer CL may be greater than that of the planarization layer PL. Unlike the top surface of the planarization layer PL, a plurality of uneven portions may be defined on the top surface of the columnar layer CL.

[0169] In the sixth layer L6-1, the columnar layer CL may be formed by an electron beam evaporation process. The columnar layer CL may be formed of a second material by an electron beam evaporation process, and the planarization layer PL may be formed of the second material by sputtering. Since the columnar layer CL is formed by an electron beam evaporation process, the columnar layer CL may have a columnar structure. The second material included in the columnar layer CL may be formed to have a vertical structure along a columnar domain by an electron beam evaporation process. Accordingly, the surface roughness of the top surface of the columnar layer CL may be relatively greater than the surface roughness of the planarization layer PL.

[0170] In the following, reference will be made to FIG. 4A to FIG. 4D , Examples and Comparative Examples describe characteristic evaluation results of windows according to implementations supported by aspects of the present disclosure. Each of the embodiments described herein is provided as an example to help understand aspects of the present disclosure, and the scope supported by aspects of the present disclosure is not limited thereto.

[0171] (Window Manufacturing)

[0172] Examples 1 to 4 and Comparative Examples were each manufactured to have a substrate layer BL and an anti-reflection layer ARL-1. Figure 4B Table 1 illustrates the material and thickness of each of the layers L1, L2, L3, L4, L5, and L6 included in the anti-reflection layer ARL-1 according to each of Embodiments 1 to 4 and the comparative example. Embodiments 1 to 4 and the comparative example are manufactured to be identical to each other except for the thickness values ​​of the specific layers L1, L2, L3, L4, L5, and L6 included in the anti-reflection layer ARL-1.

[0173] Among the materials included in the anti-reflection layer ARL-1 according to each of Examples 1 to 4 and the comparative example, aluminum silicon nitride as an Al—Si—N nanocomposite material is used as the first material, and silicon dioxide (SiO 2) is used as the second material.

[0174] [Table 1]

[0175]

[0176]

[0177] (Evaluation of window characteristics) The results of the window characteristic evaluation of Examples 1 to 4 and the comparative example are explained in Table 2 below. In the evaluation of the window characteristics in Table 2, each of the reflectance for light having a wavelength of about 550 nm, the transmittance for light having a wavelength of about 550 nm, the reflectance for light having a wavelength of about 400 nm to about 700 nm, and the transmittance for light having a wavelength of about 400 nm to about 700 nm is indicated as a percentage (%). The measured reflectance can be defined as the ratio of light reflected to the outside of the window to light incident in a direction from the outside of the window to the inside of the window. The light reflected to the outside can include both regular reflected light and diffuse reflected light, the regular reflected light being light reflected at the same angle after incident, and the diffuse reflected light being light scattered and reflected in various directions after incident.

[0178] [Table 2]

[0179]

[0180]

[0181] With reference to the results in Table 2, it can be confirmed that when compared with the window according to the comparative example, the window according to the embodiment provides an improvement in relatively low reflectivity of visible light and relatively high transmittance. Accordingly, the window according to the embodiment supported by the aspects of the present disclosure can have a reduced reflectivity of external light, and thus can improve the visibility of the user using the window. In some aspects, a display device including a window according to the embodiment supported by the aspects of the present disclosure includes a window with improved anti-reflection properties, and the display device provides improved reliability. With reference to Tables 1 and 2, the window according to the embodiment supported by the aspects of the present disclosure includes an anti-reflection layer, and the anti-reflection layer has a structure in which a first layer including a first material and having a first thickness, a second layer including a second material and having a second thickness, and a third layer including a first material and having a third thickness are stacked. Due to the inclusion of the first layer, the second layer, and the third layer, the window according to the embodiment supported by the aspects of the present disclosure and the display device including the window can have a reduced reflectivity of visible light and an increased transmittance. Accordingly, the window and the display device can provide improved visibility.

[0182] In contrast, the thicknesses of the first to third layers according to the comparative example are respectively different from those of the first to third layers of the embodiments 1 to 4. Accordingly, it is found that the comparative example has higher reflectivity and lower transmittance than the embodiments 1 to 4.

[0183] According to an embodiment supported by aspects of the present disclosure, the window may include an anti-reflection layer including first to third layers each having a specific material and a specific thickness described herein, which supports improved anti-reflection properties. Accordingly, the durability and reliability of a display device including the window may be improved.

[0184] Although some example embodiments of the present invention have been described, it should be understood that the present invention should not be limited to the example embodiments, and that a person of ordinary skill in the art can make various changes and modifications within the spirit and scope of the present invention as claimed. Therefore, the technical scope supported by aspects of the present disclosure is not limited to what is described in the detailed description of the specification, but should be determined by the claims.

Claims

1. A window comprising: basal layer; as well as an anti-reflection layer, disposed on the base layer, Wherein, the anti-reflection layer comprises: a first layer comprising a first material and having a first thickness; a second layer comprising a second material and having a second thickness; and a third layer comprising the first material and having a third thickness, in: The first material includes silicon atoms, aluminum atoms and nitrogen atoms, The second material includes silicon oxide, Each of the first thickness and the second thickness is in a range of 10 nm to 50 nm, and The third thickness ranges from 400 nm to 500 nm.

2. The window according to claim 1, wherein: Each of the first layer and the third layer has a refractive index ranging from 1.7 to 2.5, and The second layer has a refractive index in the range of 1.3 to 1.

7.

3. The window according to claim 1, wherein: The first layer is directly disposed on the base layer, The second layer is disposed directly on the first layer, and The third layer is disposed directly on the second layer.

4. The window according to claim 1, wherein: The anti-reflection layer further comprises a fourth layer disposed directly on the third layer and comprising the second material, Wherein, the fourth layer has a refractive index ranging from 1.4 to 1.

6.

5. The window according to claim 4, wherein: The fourth layer has a fourth thickness ranging from 5 nm to 15 nm.

6. The window according to claim 4, wherein: The anti-reflection layer further comprises: a fifth layer disposed directly on the fourth layer and comprising the first material; and a sixth layer, disposed directly on the fifth layer and comprising the second material, in: The fifth layer has a refractive index of 1.9 to 2.5, and The sixth layer has a refractive index ranging from 1.4 to 1.

6.

7. The window according to claim 6, wherein: The fifth layer has a fifth thickness ranging from 100 nm to 200 nm, and The sixth layer has a sixth thickness ranging from 40 nm to 100 nm.

8. The window according to claim 6, wherein: The sixth layer includes: a planarization layer disposed on the fifth layer; and a columnar layer, disposed on the planarization layer, in: providing a plurality of uneven portions on a top surface of the columnar layer, and The surface roughness of the top surface of the columnar layer is greater than the surface roughness of the top surface of the planarization layer.

9. The window according to claim 8, wherein: The planarization layer has a refractive index ranging from 1.4 to 1.6, and The columnar layer has a refractive index ranging from 1.3 to 1.

5.

10. The window according to claim 8, wherein: The planarization layer has a thickness of 20 nm or less, and The columnar layer has a thickness ranging from 50 nm to 100 nm.

11. The window according to claim 1, wherein: The atomic percentage of silicon in the first material ranges from 5 at % to 20 at %.

12. The window according to claim 1, wherein: The first material includes a metal nanocomposite material including aluminum atoms, silicon atoms, and nitrogen atoms.

13. The window according to claim 1, wherein: The first material includes aluminum silicon oxynitride.

14. The window according to claim 13, wherein: The atomic percentage of oxygen in the first material is 20 at % or less.

15. The window of claim 1, wherein: Each of the first layer and the third layer is a single layer including the first material, and The second layer is a single layer including the second material.

16. The window according to claim 1, wherein: The antireflection layer has a hardness of 20 GPa or more at an indentation depth of 100 nm.

17. The window according to claim 1, wherein: The anti-reflection layer has a residual stress of 2 GPa or less at a temperature of 28°C.

18. The window according to claim 1, further comprising: The anti-fingerprint layer is arranged on the anti-reflection layer.

19. The window of claim 1, wherein: A ratio of the first thickness of the first layer to the third thickness of the third layer is 0.1 or less, and A ratio of the second thickness of the second layer to the third thickness of the third layer is 0.1 or less.

20. A display device, comprising: Display module; as well as a window disposed on the display module and comprising an anti-reflection layer, Wherein, the anti-reflection layer comprises: a first layer comprising a first material and having a refractive index ranging from 1.7 to 2.5; A second layer including a second material and having a refractive index ranging from 1.3 to 1.7; and a third layer comprising said first material and having a refractive index ranging from 1.7 to 2.5, in: The first material includes silicon atoms, aluminum atoms and nitrogen atoms, The second material includes silicon oxide, and The third layer has a thickness of 400 nm to 500 nm.

21. A display device, comprising: Display module; as well as The window according to any one of claims 1 to 19, arranged on the display module and comprising an anti-reflection layer.

Images