Display panel, preparation method and display device

Abstract

The embodiment of the invention provides a display panel, a preparation method and a display device.The display panel comprises a substrate, and the surface of the substrate is provided with a light modulation area; the light modulation area and any one of red sub-pixels, green sub-pixels and blue sub-pixels of the display panel are arranged in a staggered manner, and the light modulation area is arranged opposite to the other two sub-pixels; the light-emitting layer is arranged on the light incident side of the substrate and is used for generating blue light; the quantum dot color conversion layer is arranged between the substrate and the light-emitting layer and is used for generating red light and green light under the excitation of blue light; the dielectric film layer is arranged in the light modulation area and used for allowing the color light corresponding to the sub-pixels right opposite to the light modulation area to pass through and reflecting the color light corresponding to the staggered sub-pixels in the light modulation area to the quantum dot color conversion layer. According to the technology of the invention, the lighting effect of the display panel is improved, the manufacturing process of the dielectric film layer is reduced, and the manufacturing cost of the display panel is reduced.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel, a preparation method and a display device. Background Art

[0002] A display panel is proposed in the related art, in which a reflective filter is arranged on a substrate or a first passivation layer, and the reflective filter is used to transmit red light and green light and reflect blue light to a quantum dot color conversion layer, so that the quantum dot color conversion layer further generates red light and green light, thereby improving the light efficiency of the display panel. However, both of the above-mentioned two preparation methods of the reflective filter have the defect of complex preparation process, resulting in a high manufacturing cost of the display panel. Summary of the invention

[0003] The embodiments of the present application provide a display panel, a manufacturing method and a display device to solve or alleviate one or more technical problems in the prior art.

[0004] In a first aspect, an embodiment of the present application provides a display panel, comprising: a substrate, a surface of which is provided with a light modulation area, the light modulation area being staggered with any one of the red sub-pixel, green sub-pixel and blue sub-pixel of the display panel and being arranged opposite to the remaining two sub-pixels; a light-emitting layer, arranged on the light incident side of the substrate, for generating blue light; a quantum dot color conversion layer, arranged between the substrate and the light-emitting layer, for generating red light and green light under the excitation of blue light; a dielectric film layer, arranged in the light modulation area, for allowing the color light corresponding to the sub-pixel opposite to the light modulation area to pass through, and for reflecting the color light corresponding to the sub-pixel staggered with the light modulation area to the quantum dot color conversion layer.

[0005] In one embodiment, the light modulation region is arranged opposite to the red sub-pixel and the green sub-pixel and staggered with the blue sub-pixel, and the dielectric film layer is used to allow red light and green light to pass through and reflect blue light to the quantum dot color conversion layer.

[0006] In one embodiment, the light modulation region is formed by etching regions on the substrate surface corresponding to the red sub-pixel and the green sub-pixel, and the light modulation region is disposed on the surface of the light incident side or the light exiting side of the substrate.

[0007] In one embodiment, the light modulation region has a recess depth of 0.6 to 1.0 um relative to the surface of the substrate.

[0008] In one embodiment, the dielectric film layer is prepared by a sputtering process.

[0009] In one embodiment, the height difference between the surface of the dielectric film layer facing away from the substrate and the surface of the substrate is -0.2 um to 0.2 um.

[0010] In one embodiment, the light modulation region is formed on the surface of the light incident side of the substrate, and the surface of the light emitting side of the substrate is a plane.

[0011] In one embodiment, the dielectric film layer is formed by a deposition process and a patterning process.

[0012] In one embodiment, the dielectric film layer includes a first dielectric layer and a second dielectric layer which are stacked, and the refractive index of the first dielectric layer is greater than the refractive index of the second dielectric layer.

[0013] In one embodiment, the display panel also includes a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source and drain metal layer, a first passivation layer, a planarization layer, a common electrode, a second passivation layer and a pixel electrode stacked in sequence on the light output side of the substrate.

[0014] In one embodiment, the display panel further includes a color filter layer located on the light-emitting side of the substrate, the color filter layer including a first transmission area corresponding to the red sub-pixel, a second transmission area corresponding to the green sub-pixel, and a third transmission area corresponding to the blue sub-pixel.

[0015] In a second aspect, an embodiment of the present application further provides a method for preparing a display panel, comprising:

[0016] A dielectric film layer is prepared on the surface of the substrate; the dielectric film layer is staggered with any one of the red sub-pixel, the green sub-pixel and the blue sub-pixel of the display panel and is arranged opposite to the other two, so as to allow the color light corresponding to the sub-pixel opposite to the light modulation area to pass through, and reflect the color light corresponding to the sub-pixel staggered in the light modulation area to the quantum dot color conversion layer;

[0017] A buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source-drain metal layer, a first passivation layer, a flat layer, a common electrode, a second passivation layer and a pixel electrode are sequentially prepared on the light-emitting side of the substrate.

[0018] In one embodiment, a dielectric film layer is prepared on a surface of a substrate, comprising:

[0019] Preparing an alignment mark on the surface of the light-emitting side of the substrate and coating it with photoresist;

[0020] Performing patterning on the photoresist to form a region directly facing the red sub-pixel and the green sub-pixel on the surface of the light-emitting side of the substrate;

[0021] Etching is performed in the opposite area by using an etching process to form a light modulation area;

[0022] A prefabricated layer is prepared on the surface of the light-emitting side of the substrate by using a sputtering process;

[0023] The prefabricated layer is peeled off to form a dielectric film layer in the light modulation area.

[0024] In one embodiment, a dielectric film layer is prepared on a surface of a substrate, comprising:

[0025] Prepare a dielectric film layer on the surface of the first side of the substrate;

[0026] Prepare a protective film layer on the first side of the substrate, wherein the protective film layer covers the dielectric film layer;

[0027] The substrate is turned over so that a second side of the substrate opposite to the first side forms a light emitting side.

[0028] In one embodiment, a dielectric film layer is prepared on a surface of a substrate, comprising:

[0029] depositing a prefabricated layer on a surface of a first side of the substrate;

[0030] performing patterning on the prefabricated layer to form a dielectric film layer;

[0031] Prepare a protective film layer on the first side of the substrate, wherein the protective film layer covers the dielectric film layer;

[0032] The substrate is turned over so that a second side of the substrate opposite to the first side forms a light emitting side.

[0033] In a third aspect, an embodiment of the present application further provides a display device, comprising the display panel of the above embodiment of the present application.

[0034] The display panel according to the embodiment of the present application has the advantage of high light transmittance, which can reduce the energy consumption of the display panel while ensuring the display effect of the display panel, thereby extending the battery life of the display device using the display panel of the embodiment of the present application. In addition, the display panel also has the advantage of low manufacturing cost.

[0035] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present application will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application.

[0037] Figure 1 A schematic diagram showing the structure of a display panel according to an embodiment of the present application is shown;

[0038] Figure 2A and Figure 2B The schematic diagrams of the structure of the display panel provided with the dielectric film layer in the embodiment of the present application are respectively shown;

[0039] Figure 3 A schematic diagram showing the structure of a display panel according to an embodiment of the present application is shown;

[0040] Figure 4 A schematic diagram showing the structure of another display panel according to an embodiment of the present application;

[0041] Figure 5 A schematic diagram showing the structure of another display panel according to an embodiment of the present application is shown;

[0042] Figure 6 A flow chart showing a method for preparing a display panel according to an embodiment of the present application;

[0043] 7A to 7F An exemplary diagram showing a method for manufacturing a display panel according to an embodiment of the present application;

[0044] Fig. 8A and Figure 8B Another exemplary diagram showing a method for manufacturing a display panel according to an embodiment of the present application;

[0045] 9A to 9C Another exemplary diagram showing a method for manufacturing a display panel according to an embodiment of the present application.

[0046] Description of reference numerals:

[0047] Display panel 1;

[0048] Substrate 10; Light modulation region 11;

[0049] A light emitting layer 20;

[0050] Quantum dot color conversion layer 30;

[0051] Dielectric film layer 40;

[0052] Buffer layer 50; active layer 51; gate insulating layer 52; gate layer 53; interlayer dielectric layer 54; source and drain metal layer 55; first passivation layer 56; planarization layer 57; common electrode 58; second passivation layer 59; pixel electrode 60;

[0053] Color filter layer 70; first transmission area 71; second transmission area 72; third transmission area 73;

[0054] Photoresist 80; prefabricated layer 81; alignment mark 82; protective film layer 83;

[0055] Filling layer 90; via hole 91; via hole filling layer 92; ITO conductive layer 93. DETAILED DESCRIPTION

[0056] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present application. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0057] In order to extend the battery life of mobile portable devices, it is necessary to reduce the power consumption of the mobile portable devices. Currently, one of the ways to achieve low power consumption is to increase the light transmittance of the display panel.

[0058] Figure 1 A schematic diagram showing the structure of a display panel 1 according to an embodiment of the present application is shown in FIG. Figure 1 As shown, the display panel 1 realizes the color gamut through the dielectric film layer 40 and the absorption type color filter while reducing the absorption of the color filter, thereby improving the light transmittance and backlight utilization, and then reducing the power consumption of the display panel 1 under the premise of ensuring the display effect. The basic principle is that the dielectric film layer 40 for transmitting red light and green light and reflecting blue light is arranged at the corresponding positions of the first transmission area 71 and the second transmission area 72 of the color filter layer 70, and the blue light emitted by the light-emitting layer 20 (i.e., BLED) excites the quantum dot color conversion layer (QD) to generate red light and green light, and the red light and green light are emitted to the color filter through the dielectric film layer 40, and the blue light is reflected back to the quantum dot color conversion layer, and the reflected blue light excites the quantum dot color conversion layer again to generate red light and green light and is emitted through the dielectric film layer 40, thereby achieving the purpose of improving the light transmittance of the display panel 1.

[0059] Figure 2A A schematic structural diagram of a display panel 1 provided with a dielectric film layer 40 according to an embodiment of the present application is shown. Figure 2A As shown, the dielectric film layer 40 is disposed on the surface of the light-emitting side of the glass substrate 10. In order to ensure the position accuracy of the dielectric film layer 40, an additional alignment mark 82 needs to be added, and the portion of the dielectric film layer 40 corresponding to the third transmission area 73 needs to be removed and a filling layer 90 needs to be set for flattening. Therefore, the dielectric film layer 40 needs to adopt three mask processes to prepare the dielectric film layer 40, the alignment mark 82 and the filling layer 90 respectively.

[0060] The problem with the display panel 1 of this structure is that, due to the film forming requirements of the CVD (Chemical Vapor Deposition) process in the Array process, the leveling layer 90 needs to have high temperature resistance (>350°C), and in order to ensure the light efficiency, it also needs to have high transmittance, but the existing material of the leveling layer 90 cannot meet the above requirements, and further source search is needed. Secondly, the material of the leveling layer 90 needs to fill the step difference of about 1um (the thickness of the dielectric film layer 40 is about 1um), and the existing leveling process cannot meet the above requirements. In addition, the slope angle of the dielectric film layer 40 formed after patterning and etching is too gentle (about 20°), which will reduce the effective opening rate of the dielectric film layer 40, thereby affecting the actual light efficiency of the display panel 1.

[0061] Figure 2B A schematic structural diagram of another display panel 1 provided with a dielectric film layer 40 according to an embodiment of the present application is shown. Figure 2B As shown, the dielectric film layer 40 is disposed on the light-emitting side of the glass substrate 10 and in the flat layer 57. The flat layer 57 and the dielectric film layer 40 are provided with a through-hole 91, and the through-hole 91 is used to connect the common electrode 58 located on the upper side and the source-drain metal layer 55 located on the lower side. In this structure, the material of the flat layer 57 does not need to be resistant to high temperatures, and existing materials can meet this requirement. However, this structure requires three mask processes to prepare the dielectric film layer 40, the via-hole filling layer 92, and the ITO (Indium Tin Oxide) conductive layer 93, respectively.

[0062] The problem with the display panel 1 of this structure is that when the dielectric film layer 40 is etched during the patterning process, the etching damage to the passivation layer and the source and drain electrodes on the lower side is relatively large, which may affect the characteristics of the TFT (Thin Film Transistor). Secondly, there is still the problem that the slope angle of the dielectric film layer 40 formed after the patterning process and etching is too gentle (about 20°), which leads to a decrease in the effective aperture ratio of the dielectric film and affects the actual light effect. In addition, the vias 91 of the dielectric film layer 40 and the flat layer 57 need to be filled and leveled. Since the depth of the vias 91 exceeds 3um, the filling and leveling process is difficult to meet this requirement.

[0063] In order to solve the above technical problems, the embodiment of the present application provides a display panel 1, a preparation method and a display device to reduce the preparation process, save manufacturing costs, and help improve the light transmittance and the working reliability of the display panel 1.

[0064] Figure 3 FIG. 1 is a schematic diagram showing a structure of a display panel 1 according to an embodiment of the present application. Figure 3As shown, the display panel 1 of the embodiment of the present application includes a substrate 10, a light-emitting layer (not shown in the figure), a quantum dot color conversion layer (not shown in the figure) and a dielectric film layer 40. Specifically, a light modulation region 11 is provided on the surface of the substrate 10, and the light modulation region 11 is staggered with any one of the red sub-pixels, green sub-pixels and blue sub-pixels of the display panel 1 and is arranged opposite to the other two sub-pixels. The light-emitting layer 20 is arranged on the light incident side of the substrate 10 for generating blue light. The quantum dot color conversion layer 30 is arranged between the substrate 10 and the light-emitting layer 20, and the quantum dot color conversion layer 30 generates red light and green light under the excitation of blue light. The dielectric film layer 40 is arranged in the light modulation region 11, for allowing the color light corresponding to the sub-pixel opposite to the light modulation region 11 to pass through, and for reflecting the color light corresponding to the sub-pixel staggered with the light modulation region 11 to the quantum dot color conversion layer 30.

[0065] In the embodiment of the present application, the light incident side of the substrate 10 refers to the side where light enters the substrate 10, and the light exiting side of the substrate 10 refers to the side where light passes through and exits the substrate 10. The light modulation area 11 is arranged opposite to the sub-pixel, which means that the orthographic projection of the light modulation area 11 on the plane where the substrate 10 is located overlaps with the orthographic projection of the sub-pixel on the plane where the substrate 10 is located; the light modulation area 11 is arranged staggered with the sub-pixel, which means that the orthographic projection of the light modulation area 11 on the plane where the substrate 10 is located does not intersect with the orthographic projection of the sub-pixel on the plane where the substrate 10 is located.

[0066] Exemplarily, the substrate 10 may be a glass substrate. The light-emitting layer 20 may be an organic light-emitting diode (BLED) capable of emitting blue light. The quantum dot color conversion layer 30 may include a first quantum dot particle and a second quantum dot particle, the first quantum dot particle is used to generate red light under blue light excitation, and the second quantum dot particle is used to generate green light under blue light excitation. It is understood that the color of the light generated by the quantum dot particle is related to the particle size of the quantum dot particle. The larger the particle size, the more red the light is, and the smaller the particle size, the more blue the light is. The particle size of the first quantum dot particle and the second quantum dot particle can be set accordingly according to the actual situation, and the embodiment of the present application does not specifically limit this.

[0067] In some examples, the light modulation region 11 is disposed opposite to the red sub-pixel and the blue sub-pixel, and is interlaced with the green sub-pixel. The dielectric film layer is used to allow red light and blue light to pass through and reflect green light to the quantum dot color conversion layer 30.

[0068] In other examples, the light modulation region 11 is disposed opposite to the green sub-pixel and the blue sub-pixel, and is interlaced with the red sub-pixel. The dielectric film layer is used to allow green light and blue light to pass through and reflect red light to the quantum dot color conversion layer 30 .

[0069] It should be noted that a scattering layer is provided on one side of the quantum dot color conversion layer 30 adjacent to the substrate 10, for scattering the light along the light-emitting direction of the display panel 1. It is understandable that after the dielectric film layer 40 reflects the green light or the red light to the quantum dot color conversion layer 30, the green light or the red light passes through the quantum dot color conversion layer 30 and is scattered along the light-emitting direction of the display panel 1 through the scattering layer, and the scattered red light or green light can be emitted through the red light sub-pixels or the green light sub-pixels staggered with the dielectric film layer 40, thereby improving the light transmittance of the red light sub-pixels or the green light sub-pixels, and further improving the light efficiency of the display panel 1.

[0070] It should be noted that in the embodiment of the present application, the light modulation area 11 can be set on the surface of the light incident side or the surface of the light output side of the substrate 10, and the light modulation area 11 can be formed by a surface depression of the substrate 10, or can be directly formed on the flat surface of the substrate 10.

[0071] In some specific examples, the light modulation region 11 can be formed by a recessed surface of the light emitting side of the substrate 10 through an etching process, and the dielectric film layer 40 is disposed in the light modulation region 11 and is substantially flush with the surface of the light emitting side of the substrate 10 .

[0072] In other specific examples, the light modulation region 11 can be directly formed by the flat surface of the light incident side of the substrate 10, and the dielectric film layer 40 is disposed in the light modulation region 11 and is located on the side of the substrate 10 adjacent to the light emitting layer 20 and the quantum dot color conversion layer 30.

[0073] Exemplarily, the dielectric film layer 40 may include a plurality of first dielectric layers and a plurality of second dielectric layers stacked in layers, wherein the first dielectric layers and the second dielectric layers are alternately arranged, wherein the refractive index of the first dielectric layer is different from the refractive index of the second dielectric layer.

[0074] In some specific examples, the material of the first dielectric layer may include Nb2O5 (niobium pentoxide), and the material of the second dielectric layer may include SiO2 (silicon dioxide), wherein the refractive index of Nb2O5 is greater than the refractive index of SiO2.

[0075] In some other specific examples, the material of the first dielectric layer may include TiO2 (titanium dioxide), and the material of the second dielectric layer may include SiO2 (silicon dioxide), wherein the refractive index of TiO2 is greater than the refractive index of SiO2.

[0076] In addition, the embodiment of the present application does not specifically limit the number and thickness of the first dielectric layer and the second dielectric layer, and those skilled in the art can flexibly set them according to actual conditions.

[0077] In one embodiment, the light modulation region 11 is disposed opposite to the red sub-pixel and the green sub-pixel and interlaced with the blue sub-pixel. The dielectric film layer is used to allow red light and green light to pass through and reflect blue light to the quantum dot color conversion layer 30 .

[0078] Exemplarily, the red sub-pixel and the green sub-pixel of the display panel 1 are arranged adjacent to each other, and the light modulation region 11 is arranged opposite to the red sub-pixel and the green sub-pixel and is staggered with the blue sub-pixel, that is, the orthographic projection of the light modulation region 11 on the plane where the substrate 10 is located overlaps with the orthographic projection of the red sub-pixel and the green sub-pixel on the plane where the substrate 10 is located and has no intersection with the orthographic projection of the blue sub-pixel on the plane where the substrate 10 is located.

[0079] It can be understood that the light-emitting layer 20, the quantum dot color conversion layer 30 and the dielectric film layer 40 are sequentially arranged in the light-emitting direction of the display panel 1. When part of the blue light emitted by the light-emitting layer 20 passes through the quantum dot color conversion layer 30, the quantum dot color conversion layer 30 is excited to generate red light and green light, and the red light and green light are emitted through the dielectric film layer 40, and respectively emit red light through the first transmission area 71 of the color filter layer 70 and emit green light through the second transmission area 72 of the color filter layer 70. The blue light is reflected at the dielectric film layer 40 and reflected back to the quantum dot color conversion layer 30 to again excite the quantum dot color conversion layer 30 to generate red light and green light, thereby improving the light effect of red light and green light. In addition, another part of the blue light emitted by the light-emitting layer 20 can be directly emitted to the third transmission area 73 of the color filter layer 70 and emitted.

[0080] According to the display panel 1 of the embodiment of the present application, a dielectric film layer 40 is provided, and the dielectric film layer 40 is used to allow the color light corresponding to the sub-pixel directly facing the light modulation area 11 to pass through, and to reflect the color light corresponding to the sub-pixel staggered by the light modulation area 11 to the quantum dot color conversion layer 30. In the case where the dielectric film layer 40 is used to reflect blue light, the reflected blue light can excite the quantum dot color conversion layer 30 to generate red light and green light again, thereby improving the light transmittance of red light and green light, and further improving the light effect of the display panel 1. In addition, in the case where the dielectric film layer 40 is used to reflect red light or green light, the red light or green light can be scattered by the scattering layer on the side of the quantum dot color conversion layer 30 adjacent to the substrate 10, thereby improving the light transmittance of red light or green light, and also improving the light effect of the display panel 1. Secondly, the display panel 1 of the embodiment of the present application is beneficial to ensuring the flatness of the light-emitting side surface of the substrate 10 by setting a light modulation area 11 for preparing the dielectric film layer 40 on the surface of the light-emitting side or the light-incident side of the substrate 10, so that there is no need to set a filling layer on the surface of the light-emitting side of the substrate 10, thereby eliminating the need for a mask process for preparing the filling layer. As a result, the dielectric film layer 40 only requires two mask processes for the alignment mark 82 and the light modulation area 11, thereby reducing the difficulty of preparing the dielectric film layer 40 and further reducing the manufacturing cost of the display panel 1.

[0081] In summary, the display panel 1 of the embodiment of the present application has the advantage of high light transmittance, which can reduce the energy consumption of the display panel 1 accordingly while ensuring the display effect of the display panel 1, thereby extending the battery life of the display device using the display panel 1 of the embodiment of the present application. In addition, the display panel 1 also has the advantage of low manufacturing cost.

[0082] In one embodiment, the light modulation region 11 is formed by etching regions on the surface of the substrate 10 corresponding to the red sub-pixel and the green sub-pixel, and the light modulation region 11 is disposed on the surface of the light incident side or the light emitting side of the substrate 10 .

[0083] For example, a metal alignment mark 82 may be prepared on the surface of the substrate 10, and then a layer of photoresist 80 may be coated on the surface of the substrate 10, and the photoresist 80 may be patterned to remove the portion of the photoresist 80 corresponding to the red sub-pixel and the green sub-pixel, and retain the portion of the photoresist 80 corresponding to the blue sub-pixel. Afterwards, the substrate 10 may be etched using a dry etching process to form a recessed light modulation region 11 on the surface of the substrate 10, and the light modulation region 11 may be arranged corresponding to the green sub-pixel and the red sub-pixel. The etching depth of the substrate 10, i.e., the recessed depth of the light modulation region 11, may be set accordingly according to the thickness of the dielectric film layer 40.

[0084] In some examples, such as Figure 3 As shown, the light modulation area 11 is disposed on the surface of the light-emitting side of the substrate 10, and the light modulation area 11 is formed by a surface depression on the light-emitting side of the substrate 10. The dielectric film layer 40 is disposed in the light modulation area 11, and the surface of the dielectric film layer 40 away from the substrate 10 is substantially flush with the surface of the light-emitting side of the substrate 10.

[0085] In other examples, such as Figure 4 As shown, the light modulation area 11 is arranged on the surface of the light incident side of the substrate 10. Specifically, the substrate 10 includes a first side surface and a second side surface arranged opposite to each other, and the light modulation area 11 is formed by a depression of the first side surface. The dielectric film layer 40 is arranged in the light modulation area 11, and the surface of the dielectric film layer 40 away from the substrate 10 is substantially flush with the first side surface of the substrate 10. Afterwards, the substrate 10 is turned over so that the flat second side surface forms the light emitting side surface of the substrate 10, and the dielectric film layer 40 is located on the light incident side of the substrate 10.

[0086] According to the above-mentioned embodiment, by patterning the substrate 10 such as an etching process to form the light modulation area 11, and preparing the dielectric film layer 40 in the light modulation area 11, the slope angle of the dielectric film layer 40 can be controlled by adjusting the etching process conditions of the substrate 10. Compared with the related art that requires etching of multiple film layers corresponding to the two materials Nb2O5 and SiO2 separately, due to the difference in etching rates of Nb2O5 and SiO2, the dielectric film layer 40 has a stepped shape that does not meet the molding requirements. The present embodiment can better optimize the molding of the dielectric film layer 40, avoid the situation where the aperture ratio is reduced due to the excessively slow slope angle, and thus ensure the light efficiency of the display panel 1.

[0087] Optionally, the light modulation region 11 is recessed to a depth of 0.6 to 1.0 um relative to the surface of the substrate 10 .

[0088] It is understandable that the depth of the depression of the light modulation region 11 is substantially the same as the thickness of the dielectric film layer 40. In other words, the thickness of the dielectric film layer 40 may be 0.6 to 1.0 um. Preferably, the thickness of the dielectric film layer 40 may be 0.7 to 0.8 um.

[0089] Optionally, the dielectric film layer 40 is prepared by a sputtering process.

[0090] Exemplarily, the dielectric film layer 40 includes a plurality of first dielectric layers and a plurality of second dielectric layers, the first dielectric layers and the second dielectric layers are alternately stacked, and the refractive index of the first dielectric layer is greater than the refractive index of the second dielectric layer. More specifically, the material of the first dielectric layer may include Nb2O5, and the material of the second dielectric layer may include SiO2.

[0091] It is understood that the sputtering process refers to magnetron sputtering, which belongs to high-speed low-temperature sputtering. The process requires a vacuum of about 1×10-3Torr, that is, a vacuum state of 1.3×10-3Pa, filled with inert gas argon (Ar), and a high-voltage direct current is applied between the plastic substrate (anode) and the metal target (cathode). The electrons generated by the glow discharge excite the inert gas to generate plasma, which blasts out atoms of the metal target (i.e., the material of the first dielectric layer or the second dielectric layer) and deposits them on the surface of the substrate 10.

[0092] In some examples, after the light modulation region 11 is formed, a prefabricated layer 81 is prepared on the surface of the substrate 10 by a sputtering process. Then, the prefabricated layer 81 and the photoresist 80 at the surface of the substrate 10 corresponding to the blue sub-pixel are removed by a lift-off process, thereby forming a dielectric film layer 40 in the light modulation region 11. It can be understood that the lift-off process is to obtain a patterned photoresist 80 structure or a metal mask (Shadow Mask) on the substrate 10 by a photolithography process, and to plate a target coating on the mask by a coating process, and then to obtain a target graphic structure consistent with the pattern by dissolving the photoresist 80 with a stripping solution (also called a stripping solution) or mechanically removing the metal hard mask.

[0093] In one embodiment, the height difference between the surface of the dielectric film layer 40 facing away from the substrate 10 and the surface of the substrate 10 is -0.2 um to 0.2 um.

[0094] It can be understood that, when the thickness of the dielectric film layer 40 is less than the depth of the light modulation area 11, the height difference between the surface of the dielectric film layer 40 facing away from the substrate 10 and the surface of the substrate 10 is a negative value; when the thickness of the dielectric film layer 40 is greater than the depth of the light modulation area 11, the height difference between the surface of the dielectric film layer 40 facing away from the substrate 10 and the surface of the substrate 10 is a negative value.

[0095] According to the above embodiment, by directly utilizing the step difference corresponding to the light modulation area 11 of the substrate 10 to deposit the dielectric film layer 40, it is beneficial to ensure the flatness of the light-emitting side surface of the substrate 10. No filling process is required at the position of the substrate 10 corresponding to the blue sub-pixel, so there is no need to use high-temperature resistant and highly transparent materials to prepare a filling layer on the light-emitting side surface of the substrate 10, thereby saving the preparation process. Even if there is a small (-0.2um to 0.2um) step difference between the surface of the dielectric film layer 40 and the light-emitting side surface of the substrate 10, it has little effect on the subsequent process and the characteristics of the thin-film transistor, and can ensure the working reliability of the display panel 1.

[0096] In one embodiment, the light modulation region 11 is formed on the surface of the light incident side of the substrate 10, and the surface of the light emitting side of the substrate 10 is a plane. The dielectric film layer 40 can be formed by a deposition process and a patterning process.

[0097] In some examples, such as Figure 5As shown, the light modulation area 11 is formed in the area corresponding to the positions of the red sub-pixel and the green sub-pixel on the light incident side surface of the substrate 10. Specifically, a prefabricated layer 81 can be first deposited on the first side surface of the substrate 10, and a metal alignment mark 82 can be made on the prefabricated layer 81. Then, the prefabricated layer 81 is patterned, and the portion of the prefabricated layer 81 corresponding to the blue sub-pixel is removed to obtain the dielectric film layer 40, and a protective film layer 83 is prepared on the dielectric film layer 40. Thereafter, the substrate 10 is turned over so that the second side surface of the substrate 10 opposite to the first side surface forms the light emitting side of the substrate 10. After the preparation of other film layer structures on the light emitting side of the substrate 10 is completed, the protective film layer 83 is removed by a stripping process.

[0098] Through the above-mentioned embodiment, the alignment mark 82 and the dielectric film layer 40 are respectively prepared by only two mask processes, thereby reducing the preparation process of the display panel 1 and reducing the manufacturing cost. Secondly, since the surface of the light-emitting side of the substrate 10 is a flat plane, and the array unit on the substrate 10 is formed on the light-incident side surface of the substrate 10, it is not necessary to prepare a high-temperature resistant and highly light-transmitting fill layer on the surface of the light-emitting side of the substrate 10, and there is no need to perform a fill process in the area corresponding to the blue sub-pixel.

[0099] In one embodiment, Figures 3 to 5 As shown, the display panel 1 also includes a buffer layer 50 (Buffer), an active layer 51 (Active), a gate insulating layer 52 (GI), a gate layer 53 (Gate), an interlayer dielectric layer 54 (ILD), a source / drain metal layer 55 (S / D), a first passivation layer 56 (PVX1), a planarization layer 57 (PLN), a common electrode 58 (C-ITO), a second passivation layer 59 (PVX2) and a pixel electrode 60 (P-ITO) which are sequentially stacked on the light-emitting side of the substrate 10.

[0100] Exemplarily, the buffer layer 50, the gate insulating layer 52, the interlayer dielectric layer 54, the first passivation layer 56, the planar layer 57 and the second passivation layer 59 are sequentially stacked in a direction away from the substrate 10. Among them, the active layer 51 is a plurality of layers corresponding to the plurality of sub-pixels and is arranged on the surface of the buffer layer 50 away from the substrate 10, and the gate insulating layer 52 is arranged on the side of the buffer layer 50 away from the substrate 10 and covers the plurality of active layers 51. The gate layer 53 is arranged on the side of the gate insulating layer 52 away from the substrate 10, and the interlayer dielectric layer 54 is arranged on the side of the gate insulating layer 52 away from the substrate 10 and covers the gate layer 53. The source-drain metal layer 55 is arranged on the side of the interlayer dielectric layer 54 away from the substrate 10, and the first passivation layer 56 covers the source-drain metal layer 55. The common electrode 58 and the pixel electrode 60 are arranged on the side of the planar layer 57 away from the substrate 10, and the two are electrically isolated by the second passivation layer 59.

[0101] In one embodiment, the display panel 1 further includes a color filter layer 70 located on the light-emitting side of the substrate 10, and the color filter layer 70 includes a first transmission area 71 corresponding to the red sub-pixel, a second transmission area 72 corresponding to the green sub-pixel, and a third transmission area 73 corresponding to the blue sub-pixel. The substrate 10 and the hierarchical structure disposed on the substrate 10 can be combined with the color filter layer 70 through a cell-matching process to complete the preparation of the display panel 1.

[0102] Exemplarily, the first transmission region 71 may be a red light transmission region, the second transmission region 72 may be a green light transmission region, and the third transmission region 73 may be a blue light transmission region.

[0103] The embodiment of the present application further provides a method for preparing a display panel, which is used to prepare the display panel of any one of the above-mentioned embodiments of the present application. Figure 6 A flow chart showing a method for preparing a display panel according to an embodiment of the present application is shown in FIG. Figure 6 As shown, the preparation method of the embodiment of the present application includes the following steps:

[0104] S101: preparing a dielectric film layer on the surface of the substrate; the dielectric film layer is staggered with any one of the red sub-pixel, the green sub-pixel and the blue sub-pixel of the display panel and is arranged opposite to the other two, so as to allow the color light corresponding to the sub-pixel opposite to the light modulation area to pass through, and reflect the color light corresponding to the sub-pixel staggered with the light modulation area to the quantum dot color conversion layer;

[0105] S102: sequentially preparing a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source-drain metal layer, a first passivation layer, a planarization layer, a common electrode, a second passivation layer and a pixel electrode on the light-emitting side of the substrate.

[0106] In the embodiment of the present application, the orthographic projection of the dielectric film layer on the plane where the substrate is located can overlap with the orthographic projections of any two of the red sub-pixel, the green sub-pixel and the blue sub-pixel on the plane where the substrate is located. The dielectric film layer may include a plurality of first dielectric layers and a plurality of second dielectric layers, the first dielectric layers and the second dielectric layers are alternately stacked, and the refractive index of the first dielectric layer is greater than that of the second dielectric layer.

[0107] According to the method for preparing the display panel of the embodiment of the present application, by preparing a dielectric film layer on the surface of the substrate for allowing the color light corresponding to the sub-pixel facing the light modulation area to pass through, and reflecting the color light corresponding to the sub-pixel staggered in the light modulation area to the quantum dot color conversion layer, the light transmittance of the display panel can be significantly improved, thereby improving the light efficiency of the display panel, and then reducing the energy consumption of the display panel accordingly while ensuring the display effect of the display panel, which is conducive to extending the battery life of the display device using the display panel of the embodiment of the present application. In addition, there is no need to fill the light-emitting side surface of the substrate, which also saves the manufacturing process of the display panel, thereby reducing the manufacturing cost of the display panel.

[0108] In one implementation, step S101 may specifically include the following steps:

[0109] An alignment mark is prepared on the surface of the light-emitting side of the substrate, and a photoresist is coated; the photoresist is patterned to form an area on the surface of the light-emitting side of the substrate that is opposite to the red sub-pixel and the green sub-pixel; etching is performed on the opposite area using an etching process to form a light modulation area; a prefabricated layer is prepared on the surface of the light-emitting side of the substrate using a sputtering process; the prefabricated layer is peeled off to form a dielectric film layer in the light modulation area.

[0110] 7A to 7F A specific example diagram of the manufacturing process of the display panel is shown, 7A to 7F As shown, the preparation method of the embodiment of the present application may include the following steps:

[0111] (1) Fig. 7A As shown, a metal alignment mark 82 is prepared on the surface of the light-emitting side of the substrate 10, and then a photoresist 80 is coated on the surface of the light-emitting side of the substrate 10, and the photoresist 80 is patterned to remove the portion of the photoresist 80 that is opposite to the red sub-pixel and the green sub-pixel;

[0112] (2) Figure 7B As shown, the substrate 10 is etched by dry etching process to form a recessed light modulation area 11. The depth of the light modulation area 11 is substantially the same as the thickness of the dielectric film layer 40, which may be 0.6 to 1 um.

[0113] (3) Figure 7C As shown, a prefabricated layer 81 is prepared on the light-emitting side of the substrate 10 by a sputtering process. The prefabricated layer 81 includes a plurality of first dielectric layers and a plurality of second dielectric layers that are deposited alternately. The material of the first dielectric layer may include Nb2O5, and the material of the second dielectric layer may include SiO2.

[0114] (4) Fig.7DAs shown, the portion of the prefabricated layer 81 corresponding to the blue sub-pixel and the remaining photoresist 80 are removed by a stripping process to complete the preparation of the dielectric film layer 40 in the light modulation area 11;

[0115] (5) Fig. 7E As shown, a buffer layer 50, an active layer 51, a gate insulating layer 52, a gate layer 53, an interlayer dielectric layer 54, a source-drain metal layer 55, a first passivation layer 56, a planarization layer 57, a common electrode 58, a second passivation layer 59 and a pixel electrode 60 are sequentially prepared on the light-emitting side of the substrate 10;

[0116] (6) Figure 7F As shown, the substrate 10 and the layered structure disposed on the substrate 10 are assembled with the color filter layer 70 to complete the preparation of the display panel 1 .

[0117] By setting a light modulation area for preparing a dielectric film layer on the surface of the light-emitting side or the light-incident side of the substrate, it is helpful to ensure the flatness of the surface of the light-emitting side of the substrate, so that there is no need to set a flat layer on the surface of the light-emitting side of the substrate, thereby eliminating the need for a mask process for preparing the flat layer. As a result, the dielectric film layer only needs two mask processes, namely, alignment marking and light modulation area, thereby reducing the difficulty of preparing the dielectric film layer and further reducing the manufacturing cost of the display panel.

[0118] In one implementation, step S101 may specifically include the following steps:

[0119] A dielectric film layer is prepared on the surface of the first side of the substrate; a protective film layer is prepared on the first side of the substrate, and the protective film layer covers the dielectric film layer; the substrate is turned over so that a second side of the substrate opposite to the first side forms a light emitting side.

[0120] Fig. 8A and Figure 8B Another specific example diagram showing the manufacturing process of the display panel is shown in FIG. Fig. 8A and Figure 8B As shown, the preparation method of the embodiment of the present application may include the following steps:

[0121] (1) Fig. 8A As shown, the first side surface of the substrate 10 is etched to form a light modulation region 11, and a dielectric film layer 40 is prepared on the light modulation region 11 by a sputtering process, and a protective film layer 83 is prepared on the surface of the dielectric film layer 40; wherein, the specific preparation process of the light modulation region 11 and the dielectric film layer 40 can refer to steps (1) to (4) of the aforementioned example and will not be repeated here;

[0122] (2) The substrate 10 is turned over so that the first side surface of the substrate 10 forms the light incident side surface of the substrate 10 and the second side surface of the substrate 10 forms the light emitting side surface of the substrate 10; a buffer layer 50, an active layer 51, a gate insulating layer 52, a gate layer 53, an interlayer dielectric layer 54, a source-drain metal layer 55, a first passivation layer 56, a flat layer 57, a common electrode 58, a second passivation layer 59 and a pixel electrode 60 are sequentially prepared on the light emitting side of the substrate 10, and the substrate 10 and its hierarchical structure are assembled with the color filter layer 70 to complete the preparation of the display panel 1.

[0123] In one implementation, step S101 may specifically include the following steps:

[0124] A prefabricated layer is deposited on the surface of the first side of the substrate; the prefabricated layer is patterned to form a dielectric film layer; a protective film layer is prepared on the first side of the substrate, the protective film layer covers the dielectric film layer; the substrate is turned over so that a second side of the substrate opposite to the first side forms a light emitting side.

[0125] 9A to 9C Another specific example diagram showing the manufacturing process of the display panel is shown in FIG. 9A to 9C As shown, the preparation method of the embodiment of the present application may include the following steps:

[0126] (1) Fig. 9A As shown, a prefabricated layer 81 is deposited on the first side surface of the substrate 10; and a metal alignment mark 82 is prepared on the prefabricated layer 81;

[0127] (2) Fig. 9B As shown, the prefabricated layer 81 is patterned to form a dielectric film layer 40; and a protective film layer 83 covering the dielectric film layer 40 is prepared on the first side of the substrate 10;

[0128] (3) Fig. 9C As shown, the substrate 10 is turned over so that the first side surface of the substrate 10 forms the light incident side surface of the substrate 10 and the second side surface of the substrate 10 forms the light emitting side surface of the substrate 10; a buffer layer 50, an active layer 51, a gate insulating layer 52, a gate layer 53, an interlayer dielectric layer 54, a source-drain metal layer 55, a first passivation layer 56, a flat layer 57, a common electrode 58, a second passivation layer 59 and a pixel electrode 60 are sequentially prepared on the light emitting side of the substrate 10, and the substrate 10 and its hierarchical structure are aligned with the color filter layer 70 to complete the preparation of the display panel 1.

[0129] In a third aspect, an embodiment of the present application further provides a display device, comprising the display panel of the above embodiment of the present application.

[0130] In addition, other components of the display device in the above embodiment may adopt various technical solutions known to ordinary technicians in this field now and in the future, and will not be described in detail here.

[0131] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0132] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0133] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0134] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0135] The disclosure above provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numerals and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not indicate the relationship between the various embodiments and / or settings discussed in itself.

[0136] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A display panel, characterized in that: include: A substrate, wherein a light modulation region is disposed on a surface of the substrate, wherein the light modulation region is staggered with any one of the red sub-pixel, the green sub-pixel and the blue sub-pixel of the display panel and is disposed opposite to the remaining two sub-pixels; A light-emitting layer, disposed on the light-incident side of the substrate, for generating blue light; A quantum dot color conversion layer, disposed between the substrate and the light-emitting layer, for generating red light and green light under the excitation of blue light; The dielectric film layer is arranged in the light modulation area, and is used for allowing the color light corresponding to the sub-pixel facing the light modulation area to pass through, and reflecting the color light corresponding to the sub-pixel staggered in the light modulation area to the quantum dot color conversion layer.

2. The display panel according to claim 1, characterized in that: The light modulation area is arranged opposite to the red sub-pixel and the green sub-pixel and is arranged alternately with the blue sub-pixel. The dielectric film layer is used for allowing red light and green light to pass through and reflecting blue light to the quantum dot color conversion layer.

3. The display panel according to claim 1, characterized in that: The light modulation area is formed by etching the area on the surface of the substrate corresponding to the red sub-pixel and the green sub-pixel, and the light modulation area is arranged on the surface of the light incident side or the light exit side of the substrate.

4. The display panel according to claim 3, characterized in that: The light modulation area has a recessed depth relative to the surface of the substrate of 0.6 to 1.0 um.

5. The display panel according to claim 3, characterized in that: The dielectric film layer is prepared by a sputtering process.

6. The display panel according to claim 3, characterized in that: A height difference between a surface of the dielectric film layer facing away from the substrate and a surface of the substrate is -0.2 um to 0.2 um.

7. The display panel according to claim 1, characterized in that: The light modulation area is formed on the surface of the light incident side of the substrate, and the surface of the light emitting side of the substrate is a plane.

8. The display panel according to claim 7, characterized in that: The dielectric film layer is formed by a deposition process and a patterning process.

9. The display panel according to claim 1, characterized in that: The dielectric film layer comprises a first dielectric layer and a second dielectric layer which are stacked, and the refractive index of the first dielectric layer is greater than the refractive index of the second dielectric layer.

10. The display panel according to any one of claims 1 to 9, characterized in that: It also includes a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source and drain metal layer, a first passivation layer, a flat layer, a common electrode, a second passivation layer and a pixel electrode which are sequentially stacked on the light-emitting side of the substrate.

11. The display panel according to any one of claims 1 to 9, characterized in that: It also includes a color filter layer located on the light-emitting side of the substrate, and the color filter layer includes a first transmission area corresponding to the red sub-pixel, a second transmission area corresponding to the green sub-pixel, and a third transmission area corresponding to the blue sub-pixel.

12. A method for preparing a display panel, characterized in that: include: A dielectric film layer is prepared on the surface of the substrate; the dielectric film layer is staggered with any one of the red sub-pixel, the green sub-pixel and the blue sub-pixel of the display panel and is arranged opposite to the other two, so as to allow the color light corresponding to the sub-pixel opposite to the light modulation area to pass through, and reflect the color light corresponding to the sub-pixel staggered in the light modulation area to the quantum dot color conversion layer; A buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source-drain metal layer, a first passivation layer, a flat layer, a common electrode, a second passivation layer and a pixel electrode are sequentially prepared on the light-emitting side of the substrate.

13. The method for preparing a display panel according to claim 12, characterized in that: The method of preparing a dielectric film layer on the surface of the substrate comprises: Preparing an alignment mark on the surface of the light-emitting side of the substrate and coating it with photoresist; Performing patterning on the photoresist to form a region directly facing the red sub-pixel and the green sub-pixel on the surface of the light-emitting side of the substrate; Etching the facing area by using an etching process to form a light modulation area; Using a sputtering process to prepare a prefabricated layer on the surface of the light-emitting side of the substrate; The prefabricated layer is peeled off to form a dielectric film layer in the light modulation area.

14. The method for preparing a display panel according to claim 12, characterized in that: The method of preparing a dielectric film layer on the surface of the substrate comprises: Prepare a dielectric film layer on the surface of the first side of the substrate; Prepare a protective film layer on the first side of the substrate, wherein the protective film layer covers the dielectric film layer; The substrate is turned over so that a second side of the substrate opposite to the first side forms a light emitting side.

15. The method for preparing a display panel according to claim 12, characterized in that: The method of preparing a dielectric film layer on the surface of the substrate comprises: depositing a prefabricated layer on a surface of the first side of the substrate; Performing patterning on the prefabricated layer to form a dielectric film layer; Prepare a protective film layer on the first side of the substrate, wherein the protective film layer covers the dielectric film layer; The substrate is turned over so that a second side of the substrate opposite to the first side forms a light emitting side.

16. A display device, characterized in that: The invention comprises the display panel as claimed in any one of claims 1 to 11.

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