Composition, thin film, photoelectric device and display device

By combining polymer materials with different molecular weights to form composition ink, the problem of uneven film thickness preparation by solution method is solved, and the high uniformity of the film and the improvement of the performance of the photoelectric device is achieved.

CN119859460APending Publication Date: 2025-04-22GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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Patent Information

Application Number
CN202410525253.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-04-28
Publication Date
2025-04-22

AI Technical Summary

Technical Problem

The semiconductor film prepared by the solution method is easily affected by the ink film forming performance during the film forming process, resulting in uneven film thickness and affecting the performance of optoelectronic devices.

Method used

By combining a variety of polymer materials with different molecular weights to form the composition ink, the film formation uniformity of the ink is improved by using the migration speed of materials with different molecular weights and the interaction force of the substrate material, and a thin film with high thickness uniformity is prepared.

Benefits of technology

The thickness uniformity of the film is improved, the film layer interface contact in the optoelectronic devices is improved, and the optoelectronic performance and life of the device is improved.

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Abstract

The invention discloses a composition, a film, a photoelectric device and a display device, the composition comprises a host material and a solvent, and the host material comprises a plurality of polymers with different molecular weights. According to the technical scheme, the polymer materials with different molecular weights are matched to form the composition ink by utilizing the characteristics that the materials with different molecular weights have different migration speeds and have different interaction forces with the substrate material, so that the film forming uniformity of the ink can be improved; and the thin film with relatively high thickness uniformity is prepared.
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Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a composition, a thin film, an optoelectronic device and a display device. Background Art

[0002] Semiconductor materials are a type of electronic material that has semiconductor properties and can be used to make semiconductor devices and integrated circuits. Thin films made of semiconductor materials are widely used in the field of optoelectronic technology. As one of the mainstream film-making methods, the quality of the film produced by the solution method is easily affected by the film-forming properties of the ink. Summary of the invention

[0003] In view of this, the present application provides a composition, a film, an optoelectronic device and a display device.

[0004] The embodiment of the present application is implemented as follows:

[0005] In a first aspect, an embodiment of the present application provides a composition comprising a main material and a solvent, wherein the main material comprises a plurality of polymers with different molecular weights.

[0006] In a second aspect, an embodiment of the present application provides a film, wherein the material of the film includes a main material, and the main material includes a plurality of polymers with different molecular weights.

[0007] In a third aspect, an embodiment of the present application provides a photoelectric device, comprising an anode, a cathode, and at least one functional layer disposed between the anode and the cathode, wherein the at least one functional layer is prepared from the composition described above, or the at least one functional layer comprises the thin film described above.

[0008] In a fourth aspect, the present application proposes a display device, comprising the optoelectronic device.

[0009] In the technical solution of the present application, a composite ink is formed by utilizing the characteristics that materials of different molecular weights have different migration speeds and different interaction forces with the substrate material, thereby helping to improve the film-forming uniformity of the ink and prepare a thin film with higher thickness uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0011] Figure 1 is a line scanning curve diagram of the film of Example 1 in the film uniformity detection, wherein Figure 1 a is a scanning image along the short axis direction of the film of Example 1, Figure 1 b is a scanning image along the long axis direction of the film of Example 1;

[0012] Figure 2 This is a line scanning curve diagram of the film of Comparative Example 1 in the film uniformity detection, where Figure 2 a is a scanning diagram along the short axis direction of the film of Comparative Example 1, Figure 2 b is a scanning image along the long axis direction of the film of Comparative Example 1;

[0013] Figure 3 This is a line scanning curve diagram of the film of Comparative Example 2 in the film uniformity detection, where Figure 3 a is a scanning diagram along the short axis direction of the film of Comparative Example 2, Figure 3 b is a scanning image along the long axis direction of the film of Comparative Example 2;

[0014] Figure 4 This is a surface scanning image of the film of Example 1 during film uniformity detection;

[0015] Figure 5 This is a surface scanning image of the film of Comparative Example 1 during film uniformity detection;

[0016] Figure 6 This is a surface scanning image of the film of Comparative Example 2 during film uniformity detection;

[0017] Figure 7 is a schematic structural diagram of an optoelectronic device provided in one embodiment of the present application;

[0018] Reference numerals: optoelectronic device 100 ; anode 10 ; cathode 20 ; light-emitting layer 30 ; hole transport layer 40 , hole injection layer 50 , electron transport layer 60 . DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words such as "upper" and "lower" used are specifically the directions of the drawings in the accompanying drawings. In addition, in the description of the present application, the term "including" means "including but not limited to". Various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity, and should not be understood as a hard limit on the scope of the present application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, description of a range from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the stated range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited numeral (fractional or integral) within the stated range.

[0020] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0021] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0022] In the first aspect, the present application provides a composition, which can be used as an ink for film formation by a solution method, wherein the solution method includes but is not limited to spin coating, printing, inkjet printing, blade coating, etc. The composition includes a main material and a solvent, wherein the main material includes a plurality of polymers with different molecular weights.

[0023] In the technical solution of the present application, the characteristics of different molecular weight materials having different migration speeds and different interaction forces with the substrate material are utilized, and a variety of polymer materials with different molecular weights are combined to form a composite ink, which helps to improve the film formation uniformity of the ink and prepare a thin film with higher thickness uniformity.

[0024] In some embodiments, the host material may be a light-emitting polymer or a P-type polymer. Depending on the host material, the composition has different properties, and films with different properties can be prepared, so that they can be applied in different scenarios.

[0025] Specifically, the P-type polymer has hole transport or hole injection properties, and accordingly, the prepared composition or film also has hole transport or hole injection properties, and can be used to prepare the hole functional layer of the optoelectronic device 100, wherein the hole functional layer includes one or two layers of the hole transport layer 40 and the hole injection layer 50. In some embodiments, the P-type polymer may include but is not limited to one or more of poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (TFB), poly(p-)phenylenevinylene (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), PEDOT:PSS, poly(N-vinylcarbazole) (PVK), poly(4-butyltriphenylamine) (Poly-TPD), polymethacrylate, and poly(9,9-octylfluorene).

[0026] Specifically, the light-emitting polymer can absorb energy and convert it into light radiation. Accordingly, the obtained composition or film also has light-emitting properties and can be used to prepare the light-emitting layer 30 of the optoelectronic device 100. According to the light-emitting color, the light-emitting polymer can include but is not limited to a blue polymer that emits blue light, a green polymer that emits green light, and a red polymer that emits red light. It can be understood that red light refers to light with a peak emission wavelength in the range of 610 to 740 nm, green light refers to light with a peak emission wavelength in the range of 520 to 580 nm, and blue light refers to light with a peak emission wavelength in the range of 440 to 490 nm.

[0027] The blue light polymer may include but is not limited to one or more of polyfluorene (PFO) and its derivatives, fluorene-3,7-S,S-dioxy-dibenzothiophene-2,7-carbazole copolymer (PFSO-2,7Cz) and its derivatives; the green light polymer may include but is not limited to poly(2-(4-(3',7'-dimethyloctyloxyphenyl)-1,4-phenylene vinylene) (P-PPV) and its derivatives, poly[(9,9-dioctylfluorene-2,7-diyl)-alternating- (2,1,3-benzothiadiazole-4,7-diyl)] (PF8BT) and one or more of its derivatives; the red light polymer may include but is not limited to poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylethynyl] (MEH-PPV) and its derivatives, poly [(9,9-dioctylfluorene-2,7-diyl)-alternate-(4,7-dithienyl-2,1,3-benzothiadiazole)] (PF8DHTBT) and one or more of its derivatives.

[0028]

[0029] In some embodiments, the difference in number average molecular weight between the polymer with the maximum molecular weight and the polymer with the minimum molecular weight is 50 to 190 kg / mol; for example, it can be 50 kg / mol, 70 kg / mol, 90 kg / mol, 100 kg / mol, 120 kg / mol, 140 kg / mol, 150 kg / mol, 170 kg / mol, 190 kg / mol and values ​​between any two of the above values. The polymer is composed of a homologous mixture with the same chemical composition but different degrees of polymerization, that is, a mixture of polymers with different molecular chain lengths. The average is calculated by the number of molecules, which is called the number average molecular weight, symbol (Mn), and the calculation method is: Mn = m / n (m is the total mass, n is the total number of moles). Controlling the maximum difference in molecular weight of the polymer in the main material within the range of 50 to 190 kg / mol can further regulate the molecular weight distribution of the polymer in the main material, so that a variety of polymers can be better matched, which helps to significantly improve the film-forming effect of the composition and improve the thickness uniformity of the film.

[0030] In some embodiments, in the composition, the types of polymers may be two, three or more. In other embodiments, in the composition, the number of types of polymers is 2 to 3. Controlling within this range can better regulate the molecular weight distribution, and more stably and accurately regulate the film-forming uniformity of the composition. It is understood that the type of polymer refers to the type of polymer contained in the composition based on the molecular weight as the classification standard. For example, the composition may be composed of a polymer A having a first molecular weight and a polymer B having a second molecular weight. The first molecular weight is different from the second molecular weight, and there are two types of polymers in the composition.

[0031] It can be understood that the smallest unit with the same chemical composition in a polymer is called a repeating monomer unit, and a polymer is formed by polymerization of multiple repeating monomer units. In the composition, polymers of different molecular weights can be polymers with the same chemical composition structure, or different types of polymers with different chemical composition structures, such as two polymers with different molecular weights, in which the repeating monomer unit of one polymer can be the same as or different from the repeating monomer unit of the other polymer. Specifically, the main material can be a mixture of TFB with a molecular weight of 150k and TFB with a molecular weight of 20k, or a mixture of TFB with a molecular weight of 150k and PVK with a molecular weight of 20k. In some embodiments, the composition is composed of polymers with different molecular weights but the same repeating monomer units. For example, the composition can be composed of polymer A with a first molecular weight and polymer B with a second molecular weight, and the structure of the repeating monomer unit of polymer A is the same as the structure of the repeating monomer unit of polymer B.

[0032] In one embodiment, the polymer is of two types according to the molecular weight. For example, when the host material is a P-type polymer, the host material is composed of a first polymer and a second polymer, the number average molecular weight of the first polymer is greater than the number average molecular weight of the second polymer, and the molecular weight difference between the two is 50 to 190 kg / mol; or, when the host material is a light-emitting polymer, the host material is composed of a first polymer and a second polymer, the number average molecular weight of the first polymer is greater than the number average molecular weight of the second polymer, and the molecular weight difference between the two is 50 to 190 kg / mol.

[0033] Further, in some embodiments, the main material is a P-type polymer, and accordingly, the number average molecular weight of the first polymer can be 100-200 kg / mol; for example, it can be 100 kg / mol, 110 kg / mol, 120 kg / mol, 130 kg / mol, 140 kg / mol, 150 kg / mol, 160 kg / mol, 170 kg / mol, 180 kg / mol, 190 kg / mol, 200 kg / mol, and values ​​between any two of the above values. The number average molecular weight of the second polymer can be 10-50 kg / mol; for example, it can be 10 kg / mol, 15 kg / mol, 20 kg / mol, 25 kg / mol, 30 kg / mol, 35 kg / mol, 40 kg / mol, 45 kg / mol, 50 kg / mol, and values ​​between any two of the above values.

[0034] Based on the above embodiment in which the main material is a P-type polymer, in the main material, the mass of the second polymer accounts for 10-50% of the mass of the main material, for example, it can be 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50% and values ​​between any two of the above values. Controlling the proportion of small molecular weight polymers within this range can play the role of a film morphology regulator, better regulate the film morphology, and improve its uniformity.

[0035] Further, in some embodiments, the host material is a light-emitting polymer, and accordingly, the number average molecular weight of the first polymer may be 100-200 kg / mol; for example, it may be 100 kg / mol, 110 kg / mol, 120 kg / mol, 130 kg / mol, 140 kg / mol, 150 kg / mol, 160 kg / mol, 170 kg / mol, 180 kg / mol, 190 kg / mol, 200 kg / mol, and values ​​between any two of the above values. The number average molecular weight of the second polymer may be 50-80 kg / mol; for example, it may be 50 kg / mol, 55 kg / mol, 60 kg / mol, 65 kg / mol, 70 kg / mol, 75 kg / mol, 80 kg / mol, and values ​​between any two of the above values.

[0036] Based on the above embodiment in which the main material is a light-emitting polymer, in the main material, the mass of the second polymer accounts for 10-50% of the mass of the main material, for example, it can be 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50% and values ​​between any two of the above values. Controlling the proportion of small molecular weight polymers within this range can play the role of a film morphology regulator, better control the film morphology, and improve its uniformity.

[0037] In some embodiments, the polymers are of three types according to the molecular weight. For example, the main material is composed of a third polymer, a fourth polymer and a fifth polymer, the molecular weight of the third polymer is greater than the molecular weight of the fourth polymer, the molecular weight of the fourth polymer is greater than the molecular weight of the fifth polymer, and the molecular weight difference between the third polymer and the fifth polymer is 50-190 kg / mol.

[0038] Specifically, the number average molecular weight of the third polymer may be 150k to 230kg / mol; for example, 150kg / mol, 160kg / mol, 170kg / mol, 180kg / mol, 190kg / mol, 200kg / mol, 210kg / mol, 220kg / mol, 230kg / mol, and values ​​between any two of the above values. The number average molecular weight of the fourth polymer may be 50 to 80kg / mol; for example, 50kg / mol, 60kg / mol, 70kg / mol, 80kg / mol, and values ​​between any two of the above values. The number average molecular weight of the fifth polymer may be 10 to 30kg / mol; for example, 10kg / mol, 15kg / mol, 20kg / mol, 25kg / mol, 30kg / mol, and values ​​between any two of the above values.

[0039] In the main material, the mass percentage of the third polymer to the mass percentage of the main material is 60-80%, for example, it can be 60%, 65%, 70%, 75%, 80% and a value between any two of the above values. The mass percentage of the fifth polymer to the mass percentage of the main material is 10-20%, for example, it can be 10%, 15%, 20% and a value between any two of the above values. The mass percentage of the fourth polymer to the mass percentage of the main material is less than or equal to 30%, for example, it can be 30%, 25%, 20%, 15%, 10%, 5%, 3%, 1%, a value less than 1% and a value between any two of the above values.

[0040] In some embodiments, the main material is a P-type polymer, and in the composition, the solvent may include but is not limited to one or more of C6-C30 aromatic esters and tetralin; the C6-C30 aromatic esters include but are not limited to one or more of methyl benzoate, ethyl benzoate, butyl benzoate, and ethyl o-methylbenzoate. In the composition, the concentration of the main material is 10 mg / mL to 40 mg / mL.

[0041] In some embodiments, the host material is a light-emitting polymer, and in the composition, the solvent may include but is not limited to one or more of C6-C30 aromatic esters and tetralin; the C6-C30 aromatic esters include but are not limited to one or more of methyl benzoate, ethyl benzoate, butyl benzoate, and ethyl o-methylbenzoate. In the composition, the concentration of the host material is 10 mg / mL to 40 mg / mL.

[0042] In actual preparation, the main material is dispersed in a solvent to obtain a composition. It is understandable that some conventional additives for printing inks, such as surfactants, pH regulators, humectants, stabilizers, etc., may also be added to the composition.

[0043] In a second aspect, the present application provides a film, wherein the material of the film includes a main material, and the main material includes a plurality of polymers with different molecular weights.

[0044] The host material includes a P-type polymer or a light-emitting polymer. Depending on the host material, the prepared film has different properties. For example, when the host material is a P-type polymer, the film has hole transport or injection properties, and when the host material is a light-emitting polymer, the film has light-emitting properties.

[0045] In some embodiments, in the host material, the difference between the number average molecular weight of the polymer with the largest molecular weight and the number average molecular weight of the polymer with the smallest molecular weight is 50k-190kg / mol.

[0046] In some embodiments, the number of types of the polymers in the host material is 2 to 5 based on the molecular weight; in other embodiments, the number of types of polymers may be two or three.

[0047] In some embodiments, in the host material, the repeating monomer units in multiple polymers are the same.

[0048] Specifically, in some embodiments, when the main material is composed of a first polymer and a second polymer, and the molecular weight of the first polymer is greater than the molecular weight of the second polymer, the mass of the second polymer in the main material accounts for 10 to 50% of the mass of the main material. For example, when the main material includes the P-type polymer and the main material is composed of the first polymer and the second polymer, the number average molecular weight of the first polymer is 100k to 200kg / mol, and the number average molecular weight of the second polymer is 10k to 50kg / mol; or, when the main material includes the light-emitting polymer and the main material is composed of the first polymer and the second polymer, the number average molecular weight of the first polymer is 100k to 200kg / mol, and the number average molecular weight of the second polymer is 50k to 80kg / mol.

[0049] In some embodiments, according to the molecular weight, the main material is composed of a third polymer, a fourth polymer and a fifth polymer, and the molecular weight of the third polymer is greater than that of the fourth polymer, and when the molecular weight of the fourth polymer is greater than that of the fifth polymer, in the main material, the mass percentage of the third polymer to the mass percentage of the main material is 60-80%, the mass percentage of the fourth polymer to the mass percentage of the main material is less than or equal to 30%, and the mass percentage of the fifth polymer to the mass percentage of the main material is 10-20%. When the main material is composed of the third polymer, the fourth polymer and the fifth polymer, the number average molecular weight of the third polymer is 150k-230kg / mol, the number average molecular weight of the fourth polymer is 50k-80kg / mol, and the number average molecular weight of the fifth polymer is 10k-30kg / mol.

[0050] In some embodiments, the film can also be prepared from the above composition. The preparation process can be a solution method, such as spin coating, printing, inkjet printing, blade coating, etc. Taking inkjet printing as an example, in some embodiments, the method for preparing the film includes the following steps: using the composition as ink, printing into a film, and then drying to obtain a film. The drying step can be: maintaining the pressure for 120 to 500 seconds at 5 to 15°C and 0.5 to 100 torr.

[0051] In a third aspect, the present application also proposes an optoelectronic device 100, including but not limited to an organic light emitting diode, a quantum dot light emitting diode, a photovoltaic cell, and a photodetector. The optoelectronic device 100 may be an upright device or an inverted device. Figure 7 The photoelectric device 100 includes an anode 10, a cathode 20, and at least one functional layer disposed between the anode 10 and the cathode 20, wherein the at least one functional layer is prepared from the film described above, or from the composition described above.

[0052] The film has good film formation uniformity, which helps to improve the interface contact between film layers in the optoelectronic device 100, thereby improving the optoelectronic performance and life of the device.

[0053] The anode 10 and the cathode 20 are independently selected from a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide. The composite electrode of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag, etc. / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, the material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba; wherein, " / " represents a stacked structure, for example, the composite electrode AZO / Ag / AZO represents an electrode of a composite structure of three stacked layers consisting of AZO layer, Ag layer and AZO layer.

[0054] In addition to the anode 10 and the cathode 20, the photoelectric device 100 may also have other intermediate film layers disposed between the anode 10 and the cathode 20, for example, including but not limited to a hole functional layer, a light-emitting layer 30, etc. Among them, the hole functional layer is disposed between the anode 10 and the light-emitting layer 30; the hole functional layer includes one or two layers of a hole injection layer 50 and a hole transport layer 40, and the hole injection layer 50 is located between the hole transport layer 40 and the anode 10. When the photoelectric device 100 includes the hole transport layer 40, the hole injection layer 50, and the light-emitting layer 30 at the same time, the film structure of the photoelectric device 100 is as follows: the anode 10, the hole injection layer 50, the hole transport layer 40, the light-emitting layer 30, and the cathode 20 are stacked in sequence, or the cathode 20, the light-emitting layer 30, the hole transport layer 40, the hole injection layer 50, and the anode 10 are stacked in sequence. It can be understood that when one or more of the above-mentioned film layers are omitted, the remaining film layers are still arranged in the above-mentioned stacking order. For example, when the optoelectronic device 100 does not include the light-emitting layer 30, the remaining film layers it contains are stacked in the following order: the anode 10, the hole injection layer 50, the hole transport layer 40, and the cathode 20 are stacked in sequence, or the cathode 20, the hole transport layer 40, the hole injection layer 50, and the anode 10 are stacked in sequence.

[0055] In order to improve the luminous efficiency and life of the optoelectronic device 100, one or more of these intermediate film layers can be prepared by using the above-mentioned thin film or the above-mentioned composition. For example, the above-mentioned thin film or composition with the P-type polymer as the main material can be used to prepare the hole functional layer, and the above-mentioned thin film or composition with the luminescent polymer as the main material can also be used to prepare the luminescent layer 30. These film layers prepared by using the above-mentioned thin film or the above-mentioned composition are named as functional layers, and the optoelectronic device 100 has at least one functional layer.

[0056] In some embodiments, the hole functional layer is prepared by using the above-mentioned film or composition with the P-type polymer as the main material, and the light-emitting layer 30 can be prepared by a conventional preparation method in the art. The material of the light-emitting layer 30 can be a conventional light-emitting material in the art, such as an organic light-emitting material or a quantum dot light-emitting material. The organic light-emitting material can be selected from one or more of the above-mentioned blue light polymer, red light polymer and green light polymer. The quantum dot light-emitting material can include but is not limited to at least one of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The shell layer of the core-shell structure quantum dot includes one or more layers; the material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the core-shell structure quantum dot The shell materials of the sub-dots include at least one of II-VI compounds, IV-VI compounds, III-V compounds and I-III-VI compounds; the II-VI compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnS eS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group compounds include at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe; the III-V group compounds include at least one of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, Ga At least one of AlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb;The I-III-VI group compounds include at least one of CuInS2, CuInSe2, and AgInS2. As an example, the quantum dots of the core-shell structure can be selected from, but not limited to, at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. It should be noted that for the materials of the aforementioned single-structure quantum dots, or the core materials of the core-shell structure quantum dots, or the shell materials of the core-shell structure quantum dots, the provided chemical formulas only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only represents being composed of three elements, Cd, Zn, and Se. If indicating the content of each element, it corresponds to Cd; Zn 1- x Se, 0 < x < 1. The perovskite semiconductor material includes doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the general structural formula of the inorganic perovskite semiconductor is AMX3, where A is a Cs + ion, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ Ge 2+ Yb 2+ Eu - Cl - Br - I n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n ≥ 2, M is a divalent metal cation selected from 2+ Pb 2+ Sn 2+ Cu 2+ Ni 2+ Cd2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of .

[0057] The optoelectronic device 100 may further include an electron transport layer 60, and the electron transport layer 60 is located between the cathode 20 and the light emitting layer 30. The material of the electron transport layer 60 may include but is not limited to at least one of a metal oxide and a doped metal oxide, the metal oxide includes at least one of ZnO, TiO2, SnO2, Ga2O3, and Al2O3, the metal oxide in the doped metal oxide includes at least one of ZnO, TiO2, SnO2, Ga2O3, and Al2O3, and the doping element includes at least one of Al, Ag, In, W, Mo, Sn, V, Fe, Mg, Co, B, Ca, Cu, Zn, and F.

[0058] It is understandable that the optoelectronic device 100 may also be provided with some functional layers conventionally used in optoelectronic devices 100 that help improve the performance of the optoelectronic device 100, such as an electron blocking layer, a hole blocking layer, an interface modification layer, etc.

[0059] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the actual requirements of the optoelectronic device 100 .

[0060] It is understandable that the optoelectronic device 100 may further include an encapsulation layer (not shown) to isolate water and oxygen (for example, to make the concentration of oxygen and water less than 0.1ppm) and improve the performance stability of the optoelectronic device 100. Specifically, the encapsulation material used to form the encapsulation layer may be selected from at least one of UV glue, metal film, and glass glue. In a specific embodiment, the encapsulation material may be acrylic resin or epoxy resin.

[0061] Based on the above optoelectronic device 100, a method for preparing the optoelectronic device 100 is further proposed. The method comprises: preparing multiple film layers in sequence according to a preset film layer sequence to obtain the optoelectronic device 100; wherein the preset film layer sequence refers to the sequence in which the optoelectronic device 100 is stacked from bottom to top.

[0062] The method for forming each film layer can be a chemical method or a physical method. Among them, the chemical method can be a chemical vapor deposition method, a continuous ion layer adsorption and reaction method, an anodic oxidation method, an electrolytic deposition method, and a coprecipitation method. The physical method can be a physical coating method or a solution processing method. The physical coating method can be a thermal evaporation coating method CVD, an electron beam evaporation coating method, a magnetron sputtering method, a multi-arc ion coating method, a physical vapor deposition method PVD, an atomic layer deposition method, and a pulsed laser deposition method; the solution processing method can be a spin coating method, a printing method, an inkjet printing method, a scraping method, a printing method, a dip-pull method, a soaking method, a spraying method, a roll coating method, a casting method, a slit coating method, and a strip coating method. Those skilled in the art can prepare the various film layers of the optoelectronic device 100 of the embodiment of the present application according to the preparation method of the optoelectronic device 100 known in the art, which will not be repeated here.

[0063] In a fourth aspect, the present application also relates to a display device, which includes the optoelectronic device 100 provided in the present application. The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptop computers, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0064] The present application is described in detail below by means of specific examples, which are only partial examples of the present application and are not intended to limit the present application. The raw materials used in the following examples are all commercially available products unless otherwise specified.

[0065] Film Example 1

[0066] (1) Dispersing a first polymer and a second polymer in a solvent to obtain a composition, wherein the concentration of the first polymer in the composition is 10 mg / ml. The first polymer is TFB with a number average molecular weight of 150k, the second polymer is TFB with a number average molecular weight of 30k, the mass of the first polymer accounts for 80% of the total mass of the first polymer and the second polymer; the mass of the second polymer accounts for 20% of the total mass of the first polymer and the second polymer; and the solvent is tetralin.

[0067] (2) A glass substrate is taken and the composition is printed on the substrate by inkjet printing to obtain a thin film with an average thickness of about 100 nm.

[0068] Film Example 2

[0069] The scheme of this embodiment is basically the same as that of Embodiment 1, except that in this embodiment:

[0070] The number average molecular weight of the second polymer is 10k.

[0071] Film Example 3

[0072] The scheme of this embodiment is basically the same as that of Embodiment 1, except that in this embodiment:

[0073] The number average molecular weight of the second polymer is 50k.

[0074] Film Example 4

[0075] The scheme of this embodiment is basically the same as that of Embodiment 1, except that in this embodiment:

[0076] The number average molecular weight of the second polymer is 60k.

[0077] Film Example 5

[0078] The scheme of this embodiment is basically the same as that of Embodiment 1, except that in this embodiment:

[0079] The number average molecular weight of the first polymer is 100k.

[0080] Film Example 6

[0081] The scheme of this embodiment is basically the same as that of Embodiment 1, except that in this embodiment:

[0082] The number average molecular weight of the first polymer is 200k.

[0083] Film Example 7

[0084] The scheme of this embodiment is basically the same as that of Embodiment 1, except that in this embodiment:

[0085] The number average molecular weight of the first polymer is 210k.

[0086] Film Example 8

[0087] The scheme of this embodiment is basically the same as that of embodiment 1, except that in step (1) of this embodiment:

[0088] The mass of the second polymer accounts for 10% of the total mass of the first polymer and the second polymer, and correspondingly, the mass of the first polymer accounts for 90% of the total mass of the first polymer and the second polymer.

[0089] Film Example 9

[0090] The scheme of this embodiment is basically the same as that of embodiment 1, except that in step (1) of this embodiment:

[0091] The mass of the second polymer accounts for 50% of the total mass of the first polymer and the second polymer. Correspondingly, the mass of the first polymer accounts for 50% of the total mass of the first polymer and the second polymer.

[0092] Film Example 10

[0093] The scheme of this embodiment is basically the same as that of embodiment 1, except that in step (1) of this embodiment:

[0094] The mass of the second polymer accounts for 60% of the total mass of the first polymer and the second polymer, and correspondingly, the mass of the first polymer accounts for 40% of the total mass of the first polymer and the second polymer.

[0095] Film Example 11

[0096] The scheme of this embodiment is basically the same as that of embodiment 1, except that in step (1) of this embodiment:

[0097] The number average molecular weight of the first polymer is 230k.

[0098] Film Example 12

[0099] The scheme of this embodiment is basically the same as that of embodiment 1, except that in step (1) of this embodiment: the second polymer is changed to PVK.

[0100] Film Example 13

[0101] The scheme of this embodiment is basically the same as that of Embodiment 1, except that, in step (1) of this embodiment: the composition further comprises TFB with a number average molecular weight of 80k, and the mass of the TFB with a number average molecular weight of 80k accounts for 10% of the total mass of the first polymer, the second polymer and the TFB with a number average molecular weight of 80k; the mass of the second polymer accounts for 10% of the total mass of the first polymer, the second polymer and the TFB with a number average molecular weight of 80k; the mass of the first polymer accounts for 80% of the total mass of the first polymer, the second polymer and the TFB with a number average molecular weight of 80k.

[0102] Film Example 14

[0103] (1) Dispersing a first polymer and a second polymer in a solvent to obtain a composition, wherein the concentration of the first polymer in the composition is 15 mg / ml. The first polymer is PFO with a number average molecular weight of 150k, the second polymer is PFO with a number average molecular weight of 70k, and the mass of the first polymer accounts for 20% of the total mass of the first polymer and the second polymer; and the solvent is ethyl benzoate.

[0104] (2) A glass substrate is taken and the composition is printed on the substrate by inkjet printing to obtain a thin film with an average thickness of about 100 nm.

[0105] Film Example 15

[0106] The scheme of this embodiment is basically the same as that of embodiment 14, except that in step (1) of this embodiment: the number average molecular weight of the second polymer is 50k.

[0107] Film Example 16

[0108] The scheme of this embodiment is basically the same as that of embodiment 14, except that in step (1) of this embodiment:

[0109] The number average molecular weight of the second polymer is 80k.

[0110] Film Example 17

[0111] The scheme of this embodiment is basically the same as that of embodiment 14, except that in step (1) of this embodiment:

[0112] The number average molecular weight of the second polymer is 80k.

[0113] Film Comparative Example 1

[0114] This comparative example is basically the same as Example 1, except that in step (1) of this comparative example:

[0115] The second polymer is removed.

[0116] Film Comparative Example 2

[0117] This comparative example is basically the same as Example 1, except that in step (1) of this comparative example:

[0118] The first polymer is removed.

[0119] Film Comparative Example 3

[0120] This comparative example is basically the same as Example 14, except that in step (1) of this comparative example:

[0121] The second polymer is removed.

[0122] Device Example 1

[0123] (1) Washing the OLED substrate with water and drying it for later use. The substrate has R sub-pixel pits, G sub-pixel pits, and B sub-pixel pits.

[0124] (2) Printing hole injection material PEDOT:PSS of different thicknesses in the R / G / B sub-pixel pits, respectively. Specifically, the R sub-pixel corresponds to a hole injection material with a thickness of 120 nm, the G sub-pixel corresponds to a hole injection material with a thickness of 60 nm, and the B sub-pixel corresponds to a hole injection material with a thickness of 30 nm. After vacuum drying to form a film, the film is heated at 200°C for 30 min to obtain a hole injection layer.

[0125] (3) Printing hole transport materials TFB of different thicknesses in the R / G / B sub-pixel pits, specifically, the R sub-pixel corresponds to a hole transport material of 100 nm thickness, the G sub-pixel corresponds to a hole transport material of 100 nm thickness, and the B sub-pixel corresponds to a hole transport material of 100 nm thickness, and then vacuum drying the film and heating it at 200° C. for 30 min to obtain a hole transport layer. The hole transport material is the composition in step (1) of thin film embodiment 1.

[0126] (4) Corresponding to the R sub-pixel pit, a 60 nm thick light-emitting material MEH-PPV is printed on the hole transport layer. Corresponding to the G sub-pixel pit, a 50 nm thick light-emitting material P-PPV is printed on the hole transport layer. Corresponding to the B sub-pixel pit, a 40 nm thick light-emitting material PFO is printed on the hole transport layer. After vacuum drying to form a film, the film is heated at 140°C for 15 minutes to obtain a light-emitting layer.

[0127] (5) A 30 nm thick electron transport layer TSPO1:Liq was co-evaporated on the light-emitting layer by doping, wherein the weight ratio of the two was 5:5, and the evaporation rates of both were controlled to be The vacuum degree is 2×10 -4 Pa.

[0128] (6) A 15 nm thick semi-transparent cathode Mg:Ag alloy layer was evaporated on the electron transport layer, where the weight ratio of Mg:Ag was 1:9, and the evaporation rates of the two were controlled as follows: and The vacuum degree is 2×10 -4 Pa.

[0129] (7) A 70 nm thick IZO film is deposited on the semi-transparent cathode by low-temperature sputtering to obtain a light extraction layer, wherein the sputtering power is controlled at 5 kW and the process pressure is controlled at 1 Pa.

[0130] (8) TFE packaging: Three overlapping packaging film layers are formed on the IZO film using CVD process and IJP process. x / Organic thin film / SiN x (Thickness is 1μm / 10μm / 1μm).

[0131] Device Examples 2 to 13

[0132] The scheme of device embodiment n is substantially the same as that of device embodiment 1, except that in step (3) of device embodiment n, the hole transport material is the composition in step (1) of thin film embodiment n. n is any integer from 2 to 13.

[0133] Device Examples 14 to 17

[0134] The scheme of device embodiment m is basically the same as device embodiment 1, except that in step (4) of device embodiment m, the luminescent material corresponding to the B sub-pixel pit is changed to the composition in step (1) of thin film embodiment m. m is any integer from 14 to 17.

[0135] Device Comparison Example 1

[0136] The device comparative example scheme is basically the same as device example 1, except that in the device comparative example, the hole transport material is the composition in step (1) of thin film comparative example 1.

[0137] Device Comparison Example 2

[0138] The device comparative example scheme is basically the same as device example 1, except that in the device comparative example, the hole transport material is the composition in step (1) of thin film comparative example 2.

[0139] Device Comparison Example 3

[0140] The device comparison scheme is basically the same as device embodiment 14, with the only difference being that, in the device comparison scheme, the light-emitting material corresponding to the B sub-pixel pit is the composition in step (1) of thin film comparison example 3.

[0141] Experimental example

[0142] The films prepared in the film examples and the film comparison examples were taken to test their film uniformity. The results are as follows: Figures 1 to 6 And as shown in Table 1.

[0143] The detection method is as follows:

[0144] The thickness uniformity of the film is tested by white light interferometer: the lens position is adjusted so that the interference fringes in the test field can effectively cover the test area, and the entire film in the field of view is scanned by line and surface to test the thickness distribution; finally, the film thickness data is exported to a format that can be extracted by the software.

[0145] The line scan includes scanning along the short axis of the film (see the results). Figure 1 a. Figure 2 a and Figure 3 a) and scanning along the long axis of the film (see Figure 1 b. Figure 2 b and Figure 3b); The surface scanning results are as follows Figures 4 to 6 shown.

[0146] The film thickness distribution in the entire film was statistically analyzed, and the film uniformity (U) was calculated as the ratio of the film thickness distribution area (A) of the target film thickness ± 5 nm to the film thickness distribution area (B) of the entire film, where U = (A / B) * 100%. The results are recorded in Table 1.

[0147] Table 1

[0148]

[0149]

[0150] and Figure 2 a and Figure 3 Compared with a, Figure 1 The curve in a has relatively small fluctuations and is less concave; Figure 2 b and Figure 3 Compared with b, Figure 1 The curve in b is relatively flatter, and the middle part shows a convex trend. In addition, Figures 4 to 6 In the figure, red represents the area with a thickness of more than 5nm, blue represents the area with a thickness of less than 5nm, green represents the area with a thickness of ±5nm, and yellow represents the non-film area. As can be seen from the figure, Figure 4 The green area is the largest, and the red and blue area accounts for the smallest proportion; combined with the data shown in Table 1, it can be clearly seen that the thickness uniformity of the film prepared by Film Example 1 is significantly higher than the thickness uniformity of the films prepared by Comparative Examples 1 and 2. In addition, the thickness uniformity of the films prepared by Examples 2 to 13 is higher than the thickness uniformity of the films prepared by Comparative Examples 1 and 2, and the thickness uniformity of the films prepared by Examples 14 to 17 is higher than the thickness uniformity of the film prepared by Comparative Example 3. This shows that the present application combines a variety of polymer materials with different molecular weights under specific conditions to form ink, which helps to improve the film-forming uniformity of the ink and prepare a highly uniform film.

[0151] The technical solutions provided by the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A composition, characterized in that The composition includes a host material and a solvent, wherein the host material includes a plurality of polymers having different molecular weights.

2. The composition according to claim 1, characterized in that The host material includes a P-type polymer or a light-emitting polymer; and / or, In the host material, the difference between the number average molecular weight of the polymer with the largest molecular weight and the polymer with the smallest molecular weight is 50k to 190kg / mol; and / or, In the host material, the number of types of the polymer is 2 to 5 based on the molecular weight; and / or, In the host material, the repeating monomer units in the plurality of polymers are the same; and / or, In the composition, the concentration of the main material is 10 to 40 mg / mL; and / or, The solvent includes one or more of C6-C30 aromatic esters and tetralin; the C6-C30 aromatic esters include one or more of methyl benzoate, ethyl benzoate, butyl benzoate, and ethyl o-methylbenzoate.

3. The composition according to claim 2, characterized in that According to the molecular weight, the number of types of the polymers in the main material is 2 or 3.

4. The composition according to claim 3, characterized in that According to the molecular weight, the main material is composed of a first polymer and a second polymer, and when the molecular weight of the first polymer is greater than the molecular weight of the second polymer, in the main material, the mass of the second polymer accounts for 10 to 50% of the mass of the main material; or According to the molecular weight, the main material is composed of a third polymer, a fourth polymer and a fifth polymer, and the molecular weight of the third polymer is greater than that of the fourth polymer. When the molecular weight of the fourth polymer is greater than that of the fifth polymer, in the main material, the mass of the third polymer accounts for 60% to 80% of the mass of the main material, the mass of the fourth polymer accounts for less than or equal to 30% of the mass of the main material, and the mass of the fifth polymer accounts for 10% to 20% of the mass of the main material.

5. The composition according to claim 4, characterized in that The main material includes the P-type polymer, and when the main material consists of the first polymer and the second polymer, the number average molecular weight of the first polymer is 100k-200k g / mol, and the number average molecular weight of the second polymer is 10k-50k g / mol; or, The host material includes the light-emitting polymer, and when the host material consists of the first polymer and the second polymer, the number average molecular weight of the first polymer is 100k-200k g / mol, and the number average molecular weight of the second polymer is 50k-80k g / mol; or When the main material consists of the third polymer, the fourth polymer and the fifth polymer, the number average molecular weight of the third polymer is 150k~230kg / mol, the number average molecular weight of the fourth polymer is 50k~80kg / mol, and the number average molecular weight of the fifth polymer is 10k~30kg / mol.

6. The composition according to claim 4, characterized in that The P-type polymer includes one or more of poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly(p-)phenylenevinylene, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene], PEDOT:PSS, poly(N-vinylcarbazole), poly(4-butyltriphenylamine), polymethacrylate, poly(9,9-octylfluorene); and / or, The light-emitting polymer includes any one of a blue light polymer, a red light polymer and a green light polymer. The blue light polymer includes one or more of polyfluorene and its derivatives, fluorene-3,7-S,S-dioxy-dibenzothiophene-2,7-carbazole copolymer and its derivatives. The green light polymer includes one or more of poly(2-(4-(3',7'-dimethyloctyloxyphenyl)-1,4-phenyleneethylene) and its derivatives, poly[(9,9-dioctylfluorene-2,7-diyl)-alternate-(2,1,3-benzothiadiazole-4,7-diyl)] and its derivatives. The red light polymer includes one or more of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylethynyl] and its derivatives, poly[(9,9-dioctylfluorene-2,7-diyl)-alternate-(4,7-dithienyl-2,1,3-benzothiadiazole)] and its derivatives.

7. A film, characterized in that: The material of the film includes a main material, and the main material includes a plurality of polymers having different molecular weights.

8. The film according to claim 7, characterized in that The host material includes a P-type polymer or a light-emitting polymer; and / or, In the host material, the difference between the number average molecular weight of the polymer with the largest molecular weight and the polymer with the smallest molecular weight is 50k to 190kg / mol; and / or, In the host material, the number of types of the polymer is 2 to 5 based on the molecular weight; and / or, In the host material, the repeating monomer units in the plurality of polymers are the same.

9. The film according to claim 8, characterized in that According to the molecular weight, the main material is composed of a first polymer and a second polymer, and when the molecular weight of the first polymer is greater than the molecular weight of the second polymer, in the main material, the mass of the second polymer accounts for 10 to 50% of the mass of the main material; or According to the molecular weight, the main material is composed of a third polymer, a fourth polymer and a fifth polymer, and the molecular weight of the third polymer is greater than that of the fourth polymer. When the molecular weight of the fourth polymer is greater than that of the fifth polymer, in the main material, the mass of the third polymer accounts for 60% to 80% of the mass of the main material, the mass of the fourth polymer accounts for less than or equal to 30% of the mass of the main material, and the mass of the fifth polymer accounts for 10% to 20% of the mass of the main material.

10. The film according to claim 9, characterized in that The main material includes the P-type polymer, and when the main material consists of the first polymer and the second polymer, the number average molecular weight of the first polymer is 100k-200k g / mol, and the number average molecular weight of the second polymer is 10k-50k g / mol; or, The host material includes the light-emitting polymer, and when the host material consists of the first polymer and the second polymer, the number average molecular weight of the first polymer is 100k-200k g / mol, and the number average molecular weight of the second polymer is 50k-80k g / mol; or When the main material consists of the third polymer, the fourth polymer and the fifth polymer, the number average molecular weight of the third polymer is 150k~230kg / mol, the number average molecular weight of the fourth polymer is 50k~80kg / mol, and the number average molecular weight of the fifth polymer is 10k~30kg / mol.

11. A photoelectric device, characterized in that: The invention comprises an anode, a cathode and at least one functional layer arranged between the anode and the cathode, wherein the at least one functional layer is prepared from the composition according to any one of claims 1 to 6, or the at least one functional layer comprises the film according to any one of claims 7 to 10.

12. The optoelectronic device according to claim 11, characterized in that: The at least one functional layer comprises one or two of a light-emitting layer and a hole functional layer; when the at least one functional layer comprises the light-emitting layer, the main material in the composition is selected from the light-emitting polymer; when the at least one functional layer comprises the hole functional layer, the main material in the composition is selected from the P-type polymer; and / or, The anode and the cathode are each independently selected from a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode. The material of the doped metal oxide particle electrode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide. The composite electrode of metal and metal oxide is selected from AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS. The material of the metal electrode is selected from one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba.

13. A display device, characterized in that: The optoelectronic device comprising claim 11 or 12.