A lateral perovskite heterojunction array and a preparation method and application thereof

By fabricating transverse perovskite heterojunction arrays using a region-selective gas-phase halide ion replacement method, the problems of fixed spectral response and crystal damage in perovskite heterojunction photodetectors have been solved. This method achieves excellent optical tuning performance and rapid wavelength switching, thereby enhancing the optoelectronic application potential of perovskite materials.

CN119894327BActive Publication Date: 2026-06-02UNIV OF MACAU
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF MACAU
Filing Date
2025-01-08
Publication Date
2026-06-02

AI Technical Summary

Technical Problem

Existing perovskite heterojunction photodetectors have a fixed spectral response during multi-band detection, making rapid switching difficult. Furthermore, the solution-based preparation of lateral perovskite heterojunctions can easily damage the prepared perovskite crystals, limiting their application potential.

Method used

A region-selective gas-phase halide ion replacement method was used to prepare a lateral perovskite heterojunction on a first perovskite crystal under the isolation of a polymer film. Then, a second perovskite crystal was formed by gas-phase replacement without destroying the original crystal structure, thus preparing a heterojunction array with good interface lattice matching.

Benefits of technology

The perovskite heterojunction array exhibits excellent optical tuning performance and can switch response wavelengths rapidly, significantly enhancing the development potential and application value of photodetectors. It also boasts high carrier transport efficiency, broadening the application scope of perovskite materials in the optoelectronic field.

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Abstract

The application discloses a transverse perovskite heterojunction array and a preparation method and application thereof, and relates to the technical field of perovskite material optoelectronic devices. The application adopts the following steps: a first perovskite crystal array is prepared on a substrate; a polymer film is prepared on the surface of the first perovskite crystal array on the side close to the substrate electrode; and a transverse perovskite heterojunction array is prepared by using a gas phase replacement method. With the assistance of the polymer film, part of the perovskite array is accurately and efficiently converted into another perovskite by using the gas phase replacement method, so that the seamless connection of the two perovskite materials is realized, a high-quality transverse perovskite heterojunction array is formed, the response ability of a short-wave laser to a long-wave laser in a light tuning photodetector prepared based on the heterojunction array can be quickly tuned, the quick switching of a response waveband is realized, and the development potential and application value of the perovskite heterojunction photodetector are significantly improved.
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