Argon ion beam scanning electron microscope pollutant capturing device and method

Abstract

The invention provides an argon ion beam scanning electron microscope pollutant capturing device and method. The pollutant capturing device comprises a sample sputtering capturing device and an objective lens lower baffle protection device, wherein the sample position sputtering capture device adopts a movable semi-closed multilayer structure, the structure is made of a sputtering-resistant metal material, and the sample position sputtering capture device comprises a capture cover and a detachable collector and is used for capturing and collecting sputtering pollutants at a sample position of the argon ion beam scanning electron microscope during ion beam polishing; the objective lens lower baffle protection device is composed of a movable sputtering-resistant metal baffle and is used for collecting sputtering pollutants falling on an objective lens of the argon ion beam scanning electron microscope during ion beam polishing. Through a dual protection mechanism, sputtering pollutants are effectively captured and collected, and diffusion of the pollutants is reduced to the maximum extent; pollutants can be prevented from being deposited on the objective lens and other key components, the service life is prolonged, and the system stability is improved; the influence of pollutants on imaging can be reduced, and the image quality and the analysis precision are improved; the semi-closed multi-layer structure and the baffle design are easy to disassemble and replace, and maintenance is convenient.

Description

Technical Field

[0001] The invention relates to the technical field of scanning electron microscopes, and in particular to a device and method for capturing pollutants in an argon ion beam scanning electron microscope. Background Art

[0002] Argon ion beam scanning electron microscope (ABSEM) integrates a broad beam of argon ions into the sample chamber of the SEM to achieve in-situ ion beam polishing and electron beam imaging. However, during the ion beam polishing process, sputtering will occur on the sample surface, generating a large number of atoms (hereinafter referred to as "sputtering contaminants"), which will contaminate other components of the sample chamber, affecting the accuracy of the experimental results and the service life of the equipment, as follows:

[0003] Contaminants are deposited on the sample surface: affecting the subsequent imaging quality, causing image blur, reduced contrast, artifacts, and other problems, reducing analysis accuracy;

[0004] Contaminants deposited on the objective lens: affecting the lens performance of the objective lens, reducing the resolution, and even damaging the objective lens;

[0005] Contaminants deposited on the detector: reduce the sensitivity and signal-to-noise ratio of the detector;

[0006] Contaminants accumulate in the vacuum system: affecting the vacuum degree, reducing system stability and shortening service life.

[0007] The existing technology lacks an effective contaminant capture device, which causes the sputtered contaminants to spread in the sample chamber, seriously affecting the imaging quality, system stability and service life of the system. Summary of the invention

[0008] In order to achieve the above-mentioned purpose and other advantages of the present invention, the first purpose of the present invention is to provide an argon ion beam scanning electron microscope contaminant capture device, including a sample sputtering capture device and an objective lens lower baffle protection device; wherein,

[0009] The sample sputtering capture device is used to capture and collect sputtering contaminants at the sample of the argon ion beam scanning electron microscope during ion beam polishing;

[0010] The objective lens lower baffle protection device is used to collect sputtered pollutants that fall onto the objective lens of an argon ion beam scanning electron microscope during ion beam polishing.

[0011] Furthermore, the sputtering capture device at the sample includes a first movable component and a semi-enclosed multilayer structure, wherein the first movable component is fixedly connected to the semi-enclosed multilayer structure, and the first movable component is used to realize the movement of the semi-enclosed multilayer structure under the control of a control panel, and the semi-enclosed multilayer structure is used to cover the ion beam and the sample, and guide and collect sputtered contaminants.

[0012] Furthermore, the semi-enclosed multi-layer structure includes a capture cover and a collector. The collector is detachably installed in the capture cover. The capture cover is used to limit the diffusion of sputtered pollutants, and the collector is used to collect sputtered pollutants.

[0013] Furthermore, the collector is a multi-layer structure with pore diameters decreasing layer by layer from the inside to the outside.

[0014] Furthermore, the capture cover is made of a metal material with sputtering resistance, and the collector is made of a porous metal material with sputtering resistance.

[0015] Furthermore, the baffle protection device under the objective lens includes a second movable component and a baffle, the second movable component is fixedly connected to the baffle, the second movable component is used to realize the movement of the baffle under the control of the control board, and the baffle is used to collect sputtered contaminants that may fall onto the objective lens.

[0016] Furthermore, the baffle is made of a metal material with sputtering resistance.

[0017] Furthermore, the first moving assembly and the second moving assembly both use electrically controlled pneumatic pull rods.

[0018] Furthermore, the first moving assembly and the second moving assembly form an interlocking linkage.

[0019] The second object of the present invention is to provide an argon ion beam scanning electron microscope, comprising the above-mentioned contaminant capturing device.

[0020] The third object of the present invention is to provide a method for capturing pollutants in an argon ion beam scanning electron microscope. The method is used to control the above-mentioned argon ion beam scanning electron microscope pollutant capturing device to capture pollutants. The method comprises:

[0021] During ion beam polishing, a sputtering capture device at the sample is controlled to move above the sample to capture and collect sputtering contaminants at the sample;

[0022] During ion beam polishing, the baffle protection device under the objective lens is controlled to move to the bottom of the objective lens to collect sputtered contaminants falling onto the objective lens.

[0023] Furthermore, the method further comprises the following steps:

[0024] When the electron beam is scanning and imaging, the sputtering capture device at the sample is controlled to be retracted to the inner wall of the sample chamber of the argon ion beam scanning electron microscope to avoid blocking the imaging light path;

[0025] When the electron beam is scanning and imaging, the baffle protection device under the objective lens is controlled to retract to the inner wall of the sample chamber to avoid blocking the imaging light path.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] Efficient capture of sputtered pollutants: The dual protection of semi-enclosed multi-layer structure and baffles effectively captures and collects sputtered pollutants, minimizing the spread of pollutants.

[0028] Protect the objective lens and other key components: Prevent contaminants from depositing on the objective lens and other key components, extend their service life and improve system stability.

[0029] Improve imaging quality and analysis accuracy: Reduce the impact of contaminants on imaging, improve image quality and analysis accuracy.

[0030] Simplified maintenance: The semi-enclosed multi-layer structure and baffle design are easy to disassemble and replace, making maintenance convenient.

[0031] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. The specific implementation of the present invention is given in detail by the following embodiments and their accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of this application. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0033] Figure 1 This is a schematic diagram of the polishing position of the argon ion beam scanning electron microscope;

[0034] Figure 2 This is a schematic diagram of the imaging position of the argon ion beam scanning electron microscope;

[0035] Figure 3 The structure diagram of the sputtering capture device at the sample;

[0036] Figure 4 This is a structural diagram of the baffle protection device under the objective lens;

[0037] Figure 5 Process flow for pollutant capture Figure 1 ;

[0038] Figure 6 Process flow for pollutant capture Figure 2 .

[0039] In the figure: 1. electron lens barrel; 2. sample chamber; 3. ion lens barrel; 4. baffle protection device under the objective lens; 41. second movable component; 42. baffle; 5. sputtering capture device at the sample; 51. first movable component; 52. semi-enclosed multi-layer structure; 521. capture cover; 522. collector; 6. sample; 7. sample stage. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0041] In the drawings, the shapes and dimensions may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like components.

[0042] In the following description, words such as center, thickness, height, length, front, back, rear, left, right, top, bottom, upper, lower, etc. are defined relative to the structure shown in the drawings. In particular, "height" is equivalent to the dimension from top to bottom, "width" is equivalent to the dimension from left to right, and "depth" is equivalent to the dimension from front to back. They are relative concepts and may change accordingly according to their different positions and different usage states. Therefore, these or other directions should not be interpreted as restrictive terms.

[0043] Terms related to attachment, coupling, and the like (eg, "connected" and "attached") refer to either a fixed or attached relationship between structures, either directly or indirectly, and either movable or rigid attachments or relationships, unless expressly stated otherwise, of the structures to one another through intermediate structures.

[0044] Example 1

[0045] An argon ion beam scanning electron microscope contaminant capture device, such as Figure 1-Figure 4 As shown, it includes a sputtering capture device 5 at the sample and a baffle protection device 4 under the objective lens; wherein,

[0046] The sample sputtering capture device 5 is used to capture and collect sputtering contaminants at the sample 6 of the argon ion beam scanning electron microscope during ion beam polishing;

[0047] The objective lens lower baffle protection device 4 is used to collect sputtered contaminants that fall onto the objective lens of the argon ion beam scanning electron microscope during ion beam polishing.

[0048] In some embodiments, the sputtering capture device at the sample is a mobile semi-enclosed multi-layer structure. Figure 3 As shown, the sputtering capture device 5 at the sample includes a first movable component 51 and a semi-enclosed multilayer structure 52. The first movable component is fixedly connected to the semi-enclosed multilayer structure. The first movable component is used to realize the movement of the semi-enclosed multilayer structure under the control of the control board. The semi-enclosed multilayer structure is used to cover the ion beam and the sample, and guide and collect the sputtered contaminants.

[0049] Specifically, during ion beam polishing, the semi-enclosed multilayer structure 52 moves to the top of the sample 6 to completely cover the ion beam and the sample, and guide the sputtered contaminants to the semi-enclosed multilayer structure to prevent the sputtered contaminants from spreading to other areas of the sample chamber 2; during electron beam scanning and imaging, the semi-enclosed multilayer structure retreats to the inner wall of the sample chamber to avoid blocking the imaging light path.

[0050] Furthermore, the semi-enclosed multilayer structure 52 includes a capture cover 521 and a collector 522. The collector is detachably installed in the capture cover. The capture cover is used to limit the diffusion of sputtered pollutants and confine most of the sputtered pollutants in the outer shielding cover. The collector is used to collect sputtered pollutants.

[0051] The outer capture cover 521 adopts an integral structure with a smooth surface and is easy to clean. The capture cover can be in the shape of square, round, semicircular, etc., and its size covers the ion beam irradiation area and the sample sputtering contamination area. The capture cover is made of metal materials with good sputtering resistance, such as molybdenum, titanium, etc., and is suitable for working in high vacuum and ion beam bombardment environments. The thickness of the capture cover is determined according to actual needs to ensure sufficient strength and shielding effect.

[0052] The inner collector 522 is replaceable, which is convenient for replacement and cleaning. The collector 522 is similar in size to the outer capture cover 521, but slightly smaller, for easy installation and disassembly. The collector is made of a porous metal material with good anti-sputtering performance. The porous structure can increase the collection area of ​​sputtered pollutants and improve the collection efficiency. Furthermore, the collector is a multi-layer structure with a pore size that decreases layer by layer from the inside to the outside. The energy of sputtered pollutants is attenuated when passing through the multi-layer pores, avoiding adhesion and clogging of the pores in the first layer, thereby adsorbing as many pollutants as possible and increasing the capture capacity of the capture cover.

[0053] In some embodiments, the baffle protection device under the objective lens is also a movable structure, which can be interlocked with the sputtering capture device at the sample. Figure 5As shown, the baffle protection device 4 under the objective lens includes a second movable component 41 and a baffle 42. The second movable component is fixedly connected to the baffle. The second movable component is used to realize the movement of the baffle under the control of the control board. The baffle is used to collect sputtered contaminants that may fall onto the objective lens.

[0054] Specifically, during ion beam polishing, the baffle 42 moves to below the objective lens to collect sputtered contaminants that may fall onto the objective lens; during electron beam scanning imaging, the baffle 42 retreats to the inner wall of the sample chamber 2 to avoid blocking the imaging light path.

[0055] The baffle is made of a metal material with sputtering resistance, and can be in a flat, bent, or other shape.

[0056] In some embodiments, both the first moving assembly and the second moving assembly use electrically controlled pneumatic pull rods, and the on and off of the solenoid valve of the air circuit are controlled by a control panel, so that the first moving assembly and the second moving assembly form an interlocking linkage.

[0057] The invention provides an argon ion beam scanning electron microscope contaminant capture device, which can effectively collect and capture sputtered contaminants, prevent them from spreading, and protect the objective lens and other key components, thereby ensuring the stable operation of the argon ion beam scanning electron microscope system and extending its service life.

[0058] Example 2

[0059] An argon ion beam scanning electron microscope comprises the above-mentioned pollutant capture device. For a detailed description of the pollutant capture device, reference may be made to the corresponding description in the above-mentioned pollutant capture device embodiment, which will not be repeated here.

[0060] like Figure 1-Figure 4 As shown, the argon ion beam scanning electron microscope integrates an electron column 1 and an ion column 3. The working principle of the argon ion beam scanning electron microscope is as follows:

[0061] Ion beam polishing: the sample stage 7 moves to the specified polishing position, the baffle protection device 4 under the objective lens moves to under the objective lens, the sputtering capture device 5 at the sample moves to above the sample 6, and the ion lens barrel 3 starts to generate an ion beam. The sample stage 7 can perform continuous rotation, linear reciprocating, swinging and other motion modes to remove the curtain effect and increase the polishing area; the ion beam bombards the sample surface, the baffle protection device under the objective lens collects the sputtering contaminants that may fall on the objective lens, and the sputtering capture device at the sample completely covers the ion beam and the sample, and guides the sputtering contaminants to the semi-enclosed multilayer structure 52 to prevent the sputtering contaminants from spreading to other areas of the sample chamber 2.

[0062] Electron beam imaging: the ion lens barrel 3 is closed, the baffle protection device 4 under the objective lens and the sputtering capture device 5 at the sample are retracted to the inner wall of the sample chamber 2 to avoid blocking the imaging light path, the sample stage 7 is moved to the specified imaging position, and the electron lens barrel 1 emits an electron beam to scan the sample surface. The generated secondary electron signal and backscattered electron signal are collected by the backscattered electron detector and the side secondary electron detector respectively, thereby forming an image.

[0063] Example 3

[0064] A method for capturing contaminants in an argon ion beam scanning electron microscope is disclosed. The method is used to control the above-mentioned argon ion beam scanning electron microscope contaminant capturing device to capture contaminants. For a detailed description of the contaminant capturing device, reference can be made to the corresponding description in the above-mentioned contaminant capturing device embodiment, which will not be repeated here.

[0065] like Figure 1-Figure 5 As shown, the method includes:

[0066] S100, during ion beam polishing, controlling a sputtering capture device at the sample to move above the sample to capture and collect sputtering contaminants at the sample;

[0067] Specifically, during ion beam polishing, the semi-enclosed multilayer structure 52 of the sputtering capture device at the sample is moved to above the sample 6 to completely cover the ion beam and the sample, and guide the sputtered contaminants to the semi-enclosed multilayer structure to prevent the sputtered contaminants from diffusing to other areas of the sample chamber 2, thereby effectively reducing sample contamination.

[0068] S110. During ion beam polishing, control the baffle protection device under the objective lens to move to below the objective lens to collect sputtered contaminants that fall onto the objective lens.

[0069] Specifically, during ion beam polishing, the baffle 42 moves to below the objective lens to collect sputtered contaminants that may fall onto the objective lens.

[0070] In some embodiments, Figure 1-Figure 6 As shown, the following steps are also included:

[0071] S200, when the electron beam is scanning for imaging, controlling the sputtering capture device at the sample to be retracted to the inner wall of the sample chamber of the argon ion beam scanning electron microscope to avoid blocking the imaging light path;

[0072] S210, when the electron beam is scanning for imaging, the baffle protection device under the objective lens is controlled to retract to the inner wall of the sample chamber to avoid blocking the imaging light path.

[0073] The number of devices and processing scales described here are used to simplify the description of the present invention. Applications, modifications and variations of the present invention will be obvious to those skilled in the art.

[0074] Although the embodiments of the present invention have been disclosed as above, they are not limited to the applications listed in the specification and implementation modes. They can be fully applied to various fields suitable for the present invention. For those familiar with the art, additional modifications can be easily implemented. Therefore, without departing from the general concept defined by the claims and the scope of equivalents, the present invention is not limited to the specific details and the illustrations shown and described herein.

[0075] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0076] The specification may be described in the general context of computer-executable instructions executed by a computer, such as program units. Generally, program units include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The specification may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected via a communications network. In a distributed computing environment, program units may be located in local and remote computer storage media, including storage devices.

[0077] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.

[0078] The above description is only an embodiment of this specification and is not intended to limit one or more embodiments of this specification. For those skilled in the art, one or more embodiments of this specification may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of one or more embodiments of this specification shall be included in the scope of the claims of one or more embodiments of this specification.

Claims

1. An argon ion beam scanning electron microscope contaminant capture device, characterized in that: It includes a sputtering capture device at the sample and a baffle protection device under the objective lens; wherein, The sample sputtering capture device is used to capture and collect sputtering contaminants at the sample of the argon ion beam scanning electron microscope during ion beam polishing; The objective lens lower baffle protection device is used to collect sputtered pollutants that fall onto the objective lens of an argon ion beam scanning electron microscope during ion beam polishing.

2. The argon ion beam scanning electron microscope contaminant capture device according to claim 1, characterized in that: The sputtering capture device at the sample includes a first movable component and a semi-enclosed multilayer structure. The first movable component is fixedly connected to the semi-enclosed multilayer structure. The first movable component is used to realize the movement of the semi-enclosed multilayer structure under the control of a control panel. The semi-enclosed multilayer structure is used to cover the ion beam and the sample, and guide and collect sputtered contaminants.

3. The argon ion beam scanning electron microscope contaminant capture device as claimed in claim 2, characterized in that: The semi-enclosed multi-layer structure comprises a capture cover and a collector. The collector is detachably installed in the capture cover. The capture cover is used to limit the diffusion of sputtered pollutants, and the collector is used to collect sputtered pollutants.

4. The argon ion beam scanning electron microscope contaminant capture device as claimed in claim 3, characterized in that: The collector is a multi-layer structure with pore diameters decreasing layer by layer from the inside to the outside.

5. The argon ion beam scanning electron microscope contaminant capture device as claimed in claim 4, characterized in that: The capture cover is made of a metal material with sputtering resistance, and the collector is made of a porous metal material with sputtering resistance.

6. The argon ion beam scanning electron microscope contaminant capture device as claimed in claim 2, characterized in that: The baffle protection device under the objective lens includes a second movable component and a baffle, wherein the second movable component is fixedly connected to the baffle, and the second movable component is used to realize the movement of the baffle under the control of the control board, and the baffle is used to collect sputtered contaminants that may fall onto the objective lens.

7. The argon ion beam scanning electron microscope contaminant capture device as claimed in claim 6, characterized in that: The baffle is made of a metal material with sputtering resistance.

8. The argon ion beam scanning electron microscope contaminant capture device as claimed in claim 6, characterized in that: The first moving assembly and the second moving assembly both use electrically controlled pneumatic pull rods.

9. The argon ion beam scanning electron microscope contaminant capture device as claimed in claim 8, characterized in that: The first moving component and the second moving component form an interlocking linkage.

10. An argon ion beam scanning electron microscope, characterized in that: Comprising a pollutant capture device as claimed in any one of claims 1 to 9.

11. A method for capturing pollutants using an argon ion beam scanning electron microscope, characterized in that: The method is used to control the argon ion beam scanning electron microscope contaminant capture device according to any one of claims 1 to 9 to capture contaminants, and the method comprises: During ion beam polishing, a sputtering capture device at the sample is controlled to move above the sample to capture and collect sputtering contaminants at the sample; During ion beam polishing, the baffle protection device under the objective lens is controlled to move to the bottom of the objective lens to collect sputtered contaminants falling onto the objective lens.

12. The method for capturing pollutants in an argon ion beam scanning electron microscope according to claim 11, characterized in that: The following steps are also included: When the electron beam is scanning and imaging, the sputtering capture device at the sample is controlled to be retracted to the inner wall of the sample chamber of the argon ion beam scanning electron microscope to avoid blocking the imaging light path; When the electron beam is scanning and imaging, the baffle protection device under the objective lens is controlled to retract to the inner wall of the sample chamber to avoid blocking the imaging light path.

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