Light emitting device and electronic device including the same

Abstract

The invention relates to a light emitting device and an electronic device including the same. Provided is a light-emitting device in which the highest occupied molecular orbital (HOMO) energy level value (HOMOC) of an energy level linking compound and the HOMO energy level value (HOMOHTL) of a hole transport layer satisfy condition (1): HOMOC-HOMOHTL < = 0.15 eV.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0146990 filed in the Korean Intellectual Property Office on October 30, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One or more embodiments of the present disclosure relate to a light emitting device and an electronic device including the light emitting device. Background Art

[0004] The light emitting device is a self-emitting device, which has wide viewing angle, high contrast, short response time, and excellent characteristics in terms of brightness, driving voltage and response speed compared with other devices in the prior art.

[0005] In an embodiment, the light emitting device may have a structure in which a first electrode is on a substrate, and a hole transport region, an emission layer, an electron transport region, and a second electrode are sequentially on the first electrode. Holes provided from the first electrode move toward the emission layer via the hole transport region, and electrons provided from the second electrode move toward the emission layer via the electron transport region. Carriers, such as holes and electrons, are recombined in the emission layer to generate light. Summary of the invention

[0006] One or more embodiments of the present disclosure include a light emitting device having an improved lifespan.

[0007] Additional aspects of the embodiments will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the embodiments presented in the disclosure.

[0008] According to one or more embodiments, a light emitting device comprises:

[0009] The first electrode,

[0010] a second electrode facing the first electrode, and

[0011] an interlayer between the first electrode and the second electrode and including an emitting layer,

[0012] The interlayer may include a hole transport layer and an electron blocking layer,

[0013] The electron blocking layer may be between the hole transport layer and the emission layer, and the electron blocking layer may be in direct contact with the hole transport layer and the emission layer.

[0014] The interlayer may include an energy level connecting compound,

[0015] Energy level linking compounds can be doped in:

[0016] In any region from point A to the emission layer, wherein point A is a point at a depth greater than 0% and up to about 20% of the thickness of the hole transport layer from the contact surface between the hole transport layer and the electron blocking layer,

[0017] The electron blocking layer may be doped with an energy level connecting compound accordingly, and

[0018] The highest occupied molecular orbital (HOMO) energy level of the energy level connecting the compound (HOMO C ) and the HOMO energy level of the hole transport layer (HOMO HTL ) can satisfy condition (1):

[0019] Condition (1)

[0020] HOMO C -HOMO HTL ≤0.15eV.

[0021] According to one or more embodiments,

[0022] The electronic device includes a light emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The above and other aspects and features of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0024] Figure 1 is a schematic cross-sectional view of a light emitting device according to an embodiment;

[0025] Figure 2 is a schematic cross-sectional view of an electronic device according to an embodiment; and

[0026] Figure 3 is a schematic cross-sectional view of an electronic device according to another embodiment. DETAILED DESCRIPTION

[0027] Reference will now be made in more detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the embodiments may have different forms and should not be construed as being limited to the description set forth herein. Accordingly, embodiments are described below only by reference to the accompanying drawings to explain aspects of the embodiments described herein. As used herein, the term "and / or" includes any and all combinations of one or more associated enumerated items. Throughout this disclosure, the expression "at least one of a, b, and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all a, b, and c, or variations thereof.

[0028] An organic light-emitting device (OLED, hereinafter also referred to as a light-emitting device) (for example, in a top emission OLED) generally has a structure including an electrode / hole injection layer / hole transport layer / electron blocking layer / emission layer / hole blocking layer / electron transport layer / electron injection layer / electrode / capping layer. In this structure, the charges of holes and electrons are transferred from electrodes at each end by charge transfer along appropriate or suitable energy levels, and these holes and electrons are recombined in the emission layer to generate light. According to the mechanism of the main light-emitting material in the emission layer, the luminescence can be divided into fluorescence (for example, delayed fluorescence (DF) and superfluorescence) and phosphorescence, etc., and depending on the type of luminescence used, singlet excitons and triplet excitons can be changed according to the utilization rate of the mechanism, the theoretical efficiency limit and the electrical characteristics.

[0029] In the case of pure fluorescence, because triplet excitons are not used in the luminescence mechanism of pure fluorescence, the triplet energy level of the luminescent material is not used. Even if the triplet excited state will inevitably appear during the operation of the light-emitting device, the light-emitting device can be prepared to have improved stability by quenching the excitons or by reducing or minimizing the triplet energy level to prevent or reduce the degradation of the luminescent material. However, the internal quantum efficiency (IQE) level in pure fluorescence is only about 25%, and therefore the development of phosphorescence / TADF / superfluorescence using triplet excitons is still continuing. However, because a luminescent material with stability that guarantees the triplet energy level has not been reported in the blue emission region, research on improving the stability of luminescent materials / light-emitting devices with triplet (T1) energy levels of 2.8 eV or higher is still continuing. The high triplet energy level inevitably increases the singlet excitons and band gap of the luminescent material, causing the band gap between the highest occupied molecular orbital (HOMO) energy level and the lowest unoccupied molecular orbital (LUMO) energy level of the luminescent material to become larger. Therefore, unlike a light-emitting device that emits fluorescence of green or red light, a light-emitting device that emits fluorescence of blue light (using the triplet energy level for emission) has a device structure containing a deep HOMO energy level and a shallow LUMO energy level, thereby causing higher driving voltage and loss electrically.

[0030] In this regard, in blue OLEDs based on phosphorescence, TADF and / or superfluorescence systems (phosphorescence + TADF and / or fluorescence, etc.), dopants and host materials with high T1 energy levels of 2.8 eV or higher can be applied. Compared with blue OLEDs based on pure fluorescence, the high T1 energy level naturally produces a larger energy level, and accordingly, an additional energy barrier can be generated when the charge is transferred from the hole transport layer / electron transport layer (e.g., charge transport layer) to the electron blocking layer / hole blocking layer (e.g., charge blocking layer). This energy barrier can then be used as a factor to increase the driving voltage of the light-emitting device and aggravate interface degradation. In this regard, the embodiments of the present disclosure solve this technical problem by doping an energy level connecting compound, which is used as a channel to enhance charge transfer through the charge transport layer-charge blocking layer-emission layer pathway.

[0031] An aspect of an embodiment of the present disclosure provides a light emitting device, comprising:

[0032] a first electrode;

[0033] a second electrode facing the first electrode; and

[0034] an interlayer between the first electrode and the second electrode and including an emitting layer,

[0035] The interlayer may include a hole transport layer and an electron blocking layer,

[0036] The electron blocking layer may be between the hole transport layer and the emission layer, and the electron blocking layer may be in direct contact with the hole transport layer and the emission layer.

[0037] The interlayer may include an energy level connecting compound,

[0038] Energy level linking compounds can be doped in:

[0039] In any region from point A to the emission layer, wherein point A is a point at a depth greater than 0% and up to about 20% of the thickness of the hole transport layer from the contact surface between the hole transport layer and the electron blocking layer,

[0040] The electron blocking layer may be doped with an energy level connecting compound accordingly, and

[0041] The highest occupied molecular orbital (HOMO) energy level of the energy level connecting the compound (HOMO C ) and the HOMO energy level of the hole transport layer (HOMO HTL ) satisfies condition (1):

[0042] Condition (1)

[0043] HOMO C –HOMO HTL ≤0.15eV.

[0044] In some embodiments, when the hole transport layer includes or consists of one type (or kind) of compound, the HOMO energy level value of the hole transport layer may be the same as the HOMO energy level value of the one type (or kind) of compound. The same may apply to other embodiments.

[0045] By doping a small amount of energy-level connecting compounds (which can easily capture holes or transfer holes to the entire or local area of ​​the hole transport layer, electron blocking layer or emission layer of a light-emitting device using triplet luminescence), the accumulation of holes at the interface can be suppressed or reduced, and holes can be transferred without an energy barrier, and thus the driving voltage can be reduced, and the accumulation of charges at the interface can be eliminated or reduced, thereby improving the stability of the light-emitting device.

[0046] In some embodiments, the doping ratio may be, for example, in the range of about 0.1 vol% to about 20 vol% (e.g., based on 100 vol% of the hole transport layer, the electron blocking layer and / or the emission layer). For example, the doping ratio may be in the range of about 1.0 vol% to about 5.0 vol% (e.g., based on 100 vol% of the hole transport layer, the electron blocking layer and / or the emission layer). When the doping ratio is within the above range, the driving voltage of the light-emitting device can be reduced, and the accumulation of charges at the interface can be eliminated or reduced, thereby improving the stability of the light-emitting device.

[0047] When the difference between the HOMO energy level of the energy level connecting compound and the HOMO energy level of the sensitizer (e.g., phosphorescent dopant) and the final luminescent dopant is set to a set value or a specific value or smaller (e.g., 0.10 eV or smaller, 0.15 eV or smaller, 0.3 eV or smaller, etc.), the final luminescence of holes can be facilitated.

[0048] To eliminate the energy barrier according to the HOMO level of the layers of the phosphorescent / TADF / superfluorescent light-emitting device, the hole transport layer, electron blocking layer and emission layer may be fully or partially doped with an energy level connecting compound. In some embodiments, the electron blocking layer is always doped with an energy level connecting compound.

[0049] In embodiments, the energy level connecting compound may be different from a compound included in the hole transport layer.

[0050] In an embodiment, the first electrode may be an anode, the second electrode may be a cathode, and the interlayer may further include an electron transport region between the second electrode and the emission layer and including a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0051] In an embodiment, the first electrode may be an anode, the second electrode may be a cathode, and the interlayer may include a hole injection layer, an emission auxiliary layer, or any combination thereof between the first electrode and the emission layer.

[0052] In an embodiment, the emission layer may include a host and a dopant, and the host may include a hole transport host compound and an electron transport host compound.

[0053] In an embodiment, HOMO C The HOMO energy level of the electron blocking layer can be greater than EBL ), the HOMO energy level value of the hole transport host compound (HOMO p ) and the HOMO energy level of the electron transport host compound (HOMO n ).

[0054] When HOMO C HOMO EBL HOMO p and HOMO n When the relationship is as described above, accumulation of holes at the interface can be suppressed or reduced, and the driving voltage of the light-emitting device can be reduced, thereby improving the stability of the light-emitting device.

[0055] In an embodiment, the emission layer may include a host and a dopant, wherein the dopant may include a phosphorescent dopant compound, and

[0056] HOMO C and the HOMO energy level of the phosphorescent dopant compound (HOMO ph ) can satisfy condition (2):

[0057] Condition (2)

[0058] |HOMO C -HOMO ph |≤0.10eV.

[0059] In an embodiment, the emission layer may include a host and a dopant, wherein the dopant may include a fluorescent dopant compound, and

[0060] HOMO C and the HOMO energy level of the fluorescent dopant compound (HOMO F ) can satisfy condition (3):

[0061] Condition (3)

[0062] |HOMO C -HOMO F |≤0.10eV.

[0063] For example, the fluorescent dopant compound may be a delayed fluorescent dopant compound.

[0064] When HOMO C HOMO ph and HOMO F When the above conditions are met, accumulation of holes at the interface can be suppressed or reduced, and the driving voltage of the light-emitting device can be reduced, thereby improving the stability of the light-emitting device.

[0065] In an embodiment, the energy level connection compound may have a dipole moment of 2 debye or more. For example, the energy level connection compound may have a dipole moment in the range of about 2 debye to about 10 debye. When the dipole moment of the energy level connection compound is within the above range, holes can be easily captured.

[0066] In the case of holes, the energy level connecting compound can be used as a capture site in each of the hole transport layer, the electron blocking layer and the emissive layer, or in any one selected from the hole transport layer, the electron blocking layer and the emissive layer. The energy level connecting compound can also be used when some of the holes (injected into the host of the emissive layer) are directly captured to the energy level of the dopant of the emissive layer, thereby controlling the loss in light emission.

[0067] For example, regarding the amount of charge accumulated inside the light-emitting device by capacitance analysis, it has been confirmed that the capacitance value is significantly reduced in the device structure including the energy level connection compound, indicating that the operating life of the light-emitting device is increased by effectively reducing the concentration of polarons inside the light-emitting device. This mechanism will be further described in the following embodiments.

[0068] In some embodiments, in the hole transport region of the light-emitting device, the hole transport layer, the electron blocking layer, and the p-type host can all be converted into positive polaron states according to the movement of the holes. In some embodiments, when the energy level connection compound is present in the adjacent layer, the hole can easily move toward the energy level connection compound so as to eliminate or reduce the positive polaron state accordingly. As a result, the probability of degradation can also be reduced. In some embodiments, because the energy level connection compound is used as a capture site, the hole can be transferred to the emission layer along the corresponding path, and finally, the hole can be directly transferred to the light-emitting material and / or sensitizer in the emission layer.

[0069] In an embodiment, the energy level connecting compound may be doped in:

[0070] in an electron blocking layer; and

[0071] In a region from the contact surface between the electron blocking layer and the emission layer to point C, wherein point C is a point at a depth greater than 0% and up to about 20% of the thickness of the emission layer from the contact surface between the electron blocking layer and the emission layer.

[0072] See also Figure 1 , energy level connecting compounds can be doped in Figure 1 In some embodiments, holes accumulated at the interface between the hole transport layer HTL and the electron blocking layer EBL can effectively move toward the energy level connecting compound. In some embodiments, when HOMO HTL and HOMO EBL When the difference between HTL -HOMO EBL >0.25eV), the movement can be effective.

[0073] In an embodiment, the energy level connecting compound may be doped in:

[0074] In the region from point A to point C, point A is a point at a depth greater than 0% and up to about 20% of the thickness of the hole transport layer HTL from the contact surface between the hole transport layer HTL and the electron blocking layer EBL, and point C is a point at a depth greater than 0% and up to about 20% of the thickness of the emission layer EML from the contact surface between the electron blocking layer EBL and the emission layer EML.

[0075] See also Figure 1 , energy level connecting compounds can be doped in Figure 1 This may correspond to an embodiment in which a path for a pre-level connection compound is formed before reaching an interface between the hole transport layer HTL and the electron blocking layer EBL.

[0076] In an embodiment, the energy level connecting compound may be doped in:

[0077] in the electron blocking layer EBL; and

[0078] In the emission layer EML.

[0079] See also Figure 1 , energy level connecting compounds can be doped in Figure 1 This may correspond to an embodiment in which the recombination zone is extended by applying a hole path of an energy level connection compound to the end of the emission layer EML.

[0080] In an embodiment, the energy level connecting compound may be doped in:

[0081] In a region from point A to a contact surface between the hole transport layer HTL and the electron blocking layer EBL, wherein point A is a point at a depth greater than 0% and up to about 20% of the hole transport layer HTL from the contact surface between the hole transport layer HTL and the electron blocking layer EBL; and

[0082] Electron blocking layer EBL.

[0083] See also Figure 1, energy level connecting compounds can be doped in Figure 1 This may correspond to an implementation method of minimizing or reducing quenching in the emission layer EML.

[0084] In an embodiment, the energy level connecting compound may be doped in:

[0085] In the region from point A to the emission layer EML (point B), point A is a point at a depth greater than 0% and up to about 20% of the thickness of the hole transport layer HTL from the contact surface between the hole transport layer HTL and the electron blocking layer EBL.

[0086] See also Figure 1 , energy level connecting compounds can be doped in Figure 1 This may correspond to an embodiment in which the advantages of doping in both regions b and c are combined.

[0087] The light emitting device according to the embodiment may satisfy conditions (1) to (3), and as long as the HOMO C Greater than HOMO EBL HOMO p and HOMO n The structure of the compound used is not limited.

[0088] In an embodiment, the energy level linking compound may include one selected from the following compounds:

[0089]

[0090]

[0091] In embodiments, the hole transport host compound and the compound included in the electron blocking layer EBL may be identical to or different from each other.

[0092] In an embodiment, the electron transport host compound and the compound included in the hole blocking layer may be the same as or different from each other.

[0093] Another aspect of an embodiment of the present disclosure provides an electronic device including a light emitting device.

[0094] In an embodiment, the electronic device may further include a thin film transistor,

[0095] The thin film transistor may include a source electrode and a drain electrode, and

[0096] The first electrode of the light emitting device may be electrically connected to at least one selected from a source electrode and a drain electrode of the thin film transistor.

[0097] In an embodiment, the electronic device may further include a color filter, a color conversion layer, a touch screen layer, a polarization layer, or any combination thereof.

[0098] The term "interlayer" as used herein refers to a single layer and / or multiple layers between a first electrode and a second electrode of a light emitting device.

[0099] Figure 1 Description

[0100] Figure 1 1 is a schematic cross-sectional view of a light emitting device 10 according to an embodiment. The light emitting device 10 includes a first electrode 110 , an interlayer 130 , and a second electrode 150 .

[0101] Below, we will refer to Figure 1 A structure of a light emitting device 10 and a method of manufacturing the light emitting device 10 according to an embodiment are described.

[0102] First electrode 110

[0103] exist Figure 1 In the embodiment, the substrate may be further below the first electrode 110 and / or on the second electrode 150. In an embodiment, a glass substrate and / or a plastic substrate may be used as the substrate. In one or more embodiments, the substrate may be a flexible substrate and may include a plastic having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0104] The first electrode 110 may be formed, for example, by depositing and / or sputtering a material for forming the first electrode 110 on a substrate. When the first electrode 110 is an anode, the material for forming the first electrode 110 may be a high work function material that facilitates injection of holes.

[0105] The first electrode 110 may be a reflective electrode, a transflective electrode, or a transmissive electrode. In an embodiment, when the first electrode 110 is a transmissive electrode, a material for forming the first electrode 110 may include indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO), or any combination thereof. In one or more embodiments, when the first electrode 110 is a transflective electrode or a reflective electrode, the material used to form the first electrode 110 may include magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof.

[0106] The first electrode 110 may have a single-layer structure consisting of a single layer or a multi-layer structure including a plurality of layers. For example, the first electrode 110 may have a triple-layer structure of ITO / Ag / ITO.

[0107] Mezzanine 130

[0108] The interlayer 130 is on the first electrode 110. The interlayer 130 may include an emission layer EML.

[0109] The interlayer 130 may further include: a hole transport region between the first electrode 110 and the emission layer EML; and an electron transport region between the emission layer EML and the second electrode 150 .

[0110] In addition to various suitable organic materials, the interlayer 130 may further include metal-containing compounds (such as organometallic compounds) and / or inorganic materials (such as quantum dots), etc.

[0111] In an embodiment, the interlayer 130 may include i) two or more emission units sequentially stacked between the first electrode 110 and the second electrode 150, and ii) a charge generation layer between each two emission units. When the interlayer 130 includes the emission layer EML and the charge generation layer as described above, the light emitting device 10 may be a tandem light emitting device.

[0112] Hole transport region in interlayer 130

[0113] The hole transport region may have: i) a single-layer structure consisting of a single layer (composed of a single material), ii) a single-layer structure consisting of a single layer (composed of multiple materials different from each other), or iii) a multilayer structure including multiple layers (including multiple materials different from each other).

[0114] The hole transport region may include a hole injection layer, a hole transport layer HTL, an emission assisting layer, an electron blocking layer EBL, or any combination thereof.

[0115] For example, the hole transport region may have a multi-layer structure, which includes a hole injection layer / hole transport layer HTL structure, a hole injection layer / hole transport layer HTL / emission auxiliary layer structure, a hole injection layer / emission auxiliary layer structure, a hole transport layer HTL / emission auxiliary layer structure or a hole injection layer / hole transport layer HTL / emission auxiliary layer structure, wherein the layers in each structure are stacked sequentially from the first electrode 110.

[0116] The hole transport region may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0117] Formula 201

[0118]

[0119] Formula 202

[0120]

[0121] Among them, in equation 201 and equation 202,

[0122] L 201 To L 204 may be each independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group,

[0123] L 205 Can be *-O-*', *-S-*', *-N(Q 201 )-*', unsubstituted or replaced by at least one R 10a Substituted C 1 -C 20 Alkylene, unsubstituted or substituted with at least one R 10a Substituted C 2 -C 20 Alkenylene, unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group,

[0124] xa1 to xa4 may each independently be an integer selected from 0 to 5,

[0125] xa5 may be an integer selected from 1 to 10,

[0126] R 201 To R 204 and Q 201 may be each independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group,

[0127] R 201 and R 202 may be optionally substituted by a single bond (eg, a single covalent bond), unsubstituted or substituted by at least one R 10a Substituted C 1-C 5 Alkylene is either unsubstituted or substituted with at least one R 10a Substituted C 2 -C 5 The alkenylene groups are connected to each other to form an unsubstituted or substituted R 10a Substituted C 8 -C 60 Polycyclic groups (e.g., carbazole groups, etc.) (see compound HT16, etc.),

[0128] R 203 and R 204 may be optionally substituted by a single bond (eg, a single covalent bond), unsubstituted or substituted by at least one R 10a Substituted C 1 -C 5 Alkylene is either unsubstituted or substituted with at least one R 10a Substituted C 2 -C 5 The alkenylene groups are connected to each other to form an unsubstituted or substituted R 10a Substituted C 8 -C 60 polycyclic groups, and

[0129] na1 may be an integer selected from 1 to 4.

[0130] For example, each of Formula 201 and Formula 202 may include at least one selected from the groups represented by Formula CY201 to Formula CY217:

[0131]

[0132] Among them, in formula CY201 to formula CY217, R 10b and R 10c Can be combined with R 10a Same as described, CY 201 To Ring CY 204 Can be independently C 3 -C 20 Carbocyclic or C 1 -C 20 heterocyclic group, and at least one hydrogen in Formula CY201 to Formula CY217 may be unsubstituted or replaced by R 10a replace.

[0133] In an embodiment, ring CY in formula CY201 to formula CY217 201 To Ring CY 204 Each independently may be phenyl, naphthyl, phenanthryl or anthracenyl.

[0134] In one or more embodiments, each of Formula 201 and Formula 202 may include at least one selected from the groups represented by Formula CY201 to Formula CY203.

[0135] In one or more embodiments, Formula 201 may include at least one selected from the group represented by Formulas CY201 to CY203 and at least one selected from the group represented by Formulas CY204 to CY217.

[0136] In one or more embodiments, in Formula 201, xa1 may be 1, R 201 may be one of the groups represented by the formula CY201 to the formula CY203, xa2 may be 0, and R 202 It may be one selected from the group represented by the formula CY204 to the formula CY207.

[0137] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formula CY201 to Formula CY203.

[0138] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formula CY201 to Formula CY203, and may include at least one selected from the groups represented by Formula CY204 to Formula CY217.

[0139] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formula CY201 to Formula CY217.

[0140] For example, the hole transport region may include: one of compounds HT1 to HT50; m-MTDATA; TDATA; 2-TNATA; NPB (NPD); β-NPB; TPD; spiro TPD; spiro NPB; methylated NPB; TAPC; HMTPD; 4,4',4"-tri(N-carbazolyl)triphenylamine (TCTA); polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA); poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS); polyaniline / camphorsulfonic acid (PANI / CSA); polyaniline / poly(4-styrenesulfonate) (PANI / PSS); or any combination thereof:

[0141]

[0142]

[0143]

[0144]

[0145]

[0146] The thickness of the hole transport region may be about to about For example, about to about When the hole transport region includes a hole injection layer, a hole transport layer HTL or any combination thereof, the thickness of the hole injection layer may be about 1000 nm. to about For example, about to about and the thickness of the hole transport layer HTL may be in the range of about to about For example, about to about When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer HTL are within these ranges, appropriate or satisfactory hole transport characteristics may be obtained without significantly increasing the driving voltage.

[0147] The emission auxiliary layer may increase luminous efficiency by compensating the optical resonance distance according to the wavelength of light emitted by the emission layer EML, and the electron blocking layer EBL may block or reduce leakage of electrons from the emission layer EML to the hole transport region. Materials that may be included in the hole transport region may be included in the emission auxiliary layer and the electron blocking layer EBL.

[0148] In an embodiment, the compound included in the electron blocking layer EBL may be the same as the hole transport host compound described below.

[0149] p-dopant

[0150] In addition to the aforementioned materials, the hole transport region may further include a charge generation material for improving conductive properties (eg, electrical conductivity properties). The charge generation material may be uniformly or non-uniformly dispersed in the hole transport region (eg, in the form of a single layer consisting of the charge generation material).

[0151] The charge generating material may be, for example, a p-dopant.

[0152] For example, the p-dopant may have a LUMO level of about -3.5 eV or less.

[0153] In an embodiment, the p-dopant may include a quinone derivative, a cyano group-containing compound, a compound including the element EL1 and the element EL2, or any combination thereof.

[0154] Examples of the quinone derivative may include TCNQ, F4-TCNQ, and the like.

[0155] Examples of the cyano group-containing compound may include HAT-CN and a compound represented by Formula 221, and the like:

[0156]

[0157] Formula 221

[0158]

[0159] Among them, in formula 221,

[0160] R 221 To R 223 may be each independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 a heterocyclic group, and

[0161] Selected from R 221 To R 223 At least one of them may be independently C each substituted by 3 -C 60 Carbocyclic or C 1 -C 60 Heterocyclic group: cyano; -F; -Cl; -Br; -I; C substituted by cyano, -F, -Cl, -Br, -I or any combination thereof 1 -C 20 or any combination thereof.

[0162] In a compound including an element EL1 and an element EL2, the element EL1 may be a metal, a metalloid, or any combination thereof, and the element EL2 may be a nonmetal, a metalloid, or any combination thereof.

[0163] Examples of metals may include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt ( Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); late transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); and lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); etc.

[0164] Examples of metalloids may include silicon (Si), antimony (Sb), tellurium (Te), and the like.

[0165] Examples of non-metal may include oxygen (O) and halogen (eg, F, Cl, Br, I, etc.), and the like.

[0166] For example, the compound including element EL1 and element EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides, metal iodides, etc.), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides, metalloid iodides, etc.), metal tellurides, or any combination thereof.

[0167] Examples of metal oxides may include tungsten oxides (eg, WO, W 2 O 3 , WO 2 , WO 3 , W 2 O 5 etc.), vanadium oxides (e.g., VO, V 2 O 3 , VO 2 、V 2 O 5 etc.), molybdenum oxides (e.g., MoO, Mo 2 O 3 、MoO 2 、MoO 3 、Mo 2 O 5 etc.) and rhenium oxides (e.g., ReO 3 etc.

[0168] Examples of the metal halide may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, and the like.

[0169] Examples of alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, and the like.

[0170] Examples of alkaline earth metal halides may include BeF 2 MgF 2 , CaF 2 , SrF 2 , BaF 2 、BeCl 2 MgCl 2 , CaCl 2 、SrCl 2 、BaCl 2 ,BeBr 2 MgBr 2 , CaBr 2 , SrBr 2 ,BaBr 2 ,BeI 2 MgI 2 ,CaI 2 , SrI 2 and BaI 2 wait.

[0171] Examples of transition metal halides may include titanium halides (eg, TiF 4 、TiCl 4 、TiBr 4 、TiI 4 etc.), zirconium halides (e.g., ZrF 4 、ZrCl 4 , ZrBr 4 , ZrI 4 etc.), hafnium halides (e.g., HfF 4 , HfCl 4 , HfBr 4 , HfI 4 etc.), vanadium halides (e.g., VF 3 、VCl 3 , VBr 3 VI 3 etc.), niobium halides (e.g., NbF 3 、NbCl 3 , NbBr 3 , NbI3 etc.), tantalum halides (e.g., TaF 3 、TaCl 3 、TaBr 3 、TaI 3 etc.), chromium halides (e.g., CrF 3 CrCl 3 CrBr 3 CrI 3 etc.), molybdenum halides (e.g., MoF 3 、MoCl 3 、MoBr 3 、MoI 3 etc.), tungsten halides (e.g., WF 3 、WCl 3 , WBr 3 , WI 3 etc.), manganese halides (e.g., MnF 2 、MnCl 2 、MnBr 2 、MnI 2 etc.), technetium halides (e.g., TcF 2 , TcCl 2 , TcBr 2 , TcI 2 etc.), rhenium halides (e.g., ReF 2 、ReCl 2 、ReBr 2 、ReI 2 etc.), ferrous halides (e.g., FeF 2 、FeCl 2 , FeBr 2 ,FeI 2 etc.), ruthenium halides (e.g., RuF 2 、RuCl 2 ,RuBr 2 , RuI 2 etc.), osmium halides (e.g., OsF 2 , OsCl 2 、OsBr 2 , OsI 2 etc.), cobalt halides (e.g., CoF 2 、CoCl 2 ,CoBr 2 、CoI 2 etc.), rhodium halides (e.g., RhF 2 , RhCl 2 , RhBr 2 , RhI 2 etc.), iridium halides (e.g., IrF 2 、IrCl2 ,IrBr 2 ,IrI 2 etc.), nickel halides (e.g., NiF 2 、NiCl 2 、NiBr 2 , NiI 2 etc.), palladium halides (e.g., PdF 2 , PdCl 2 , PdBr 2 , PdI 2 etc.), platinum halides (e.g., PtF 2 、PtCl 2 , PtBr 2 , PtI 2 etc.), cuprous halides (e.g., CuF, CuCl, CuBr, CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), and gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.

[0172] Examples of late transition metal halides may include zinc halides (eg, ZnF 2 、ZnCl 2 、ZnBr 2 、ZnI 2 etc.), indium halides (e.g., InI 3 etc.) and tin halides (e.g., SnI 2 etc.

[0173] Examples of lanthanide metal halides are YbF, YbF 2 , YbF 3 、SmF 3 、YbCl、YbCl 2 YbCl 3 、SmCl 3 , YbBr, YbBr 2 , YbBr 3 、SmBr 3 、YbI、YbI 2 ,YbI 3 and SmI 3 wait.

[0174] Examples of metalloid halides may include antimony halides (eg, SbCl 5 etc.

[0175] Examples of metal tellurides may include alkali metal tellurides (eg, Li 2 Te、Na 2 Te, K 2 Te、Rb 2Te, Cs 2 Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe 2 、ZrTe 2 、HfTe 2 、V 2 Te 3 , Nb 2 Te 3 、 2 Te 3 Cr 2 Te 3 、Mo 2 Te 3 , W 2 Te 3 , MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu 2 Te, CuTe, Ag 2 Te, AgTe, Au 2 Te, etc.), late transition metal tellurides (e.g., ZnTe, etc.), and lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.), etc.

[0176] Emission layer in interlayer 130

[0177] When the light-emitting device 10 is a full-color light-emitting device, the emission layer EML may be patterned into a red emission layer, a green emission layer, and / or a blue emission layer according to sub-pixels. In an embodiment, the emission layer EML may have a stacked structure of two or more layers of a red emission layer, a green emission layer, and a blue emission layer, wherein the two or more layers are in contact with each other or separated from each other to emit white light. In one or more embodiments, the emission layer EML may include two or more materials of a red light-emitting material, a green light-emitting material, and a blue light-emitting material, wherein the two or more materials are mixed with each other in a single layer to emit white light.

[0178] In an embodiment, the emission layer EML may include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or any combination thereof.

[0179] The amount of the dopant in the emission layer EML may be in the range of about 0.01 parts by weight to about 15 parts by weight based on 100 parts by weight of the host.

[0180] In one or more embodiments, the emission layer EML may include quantum dots.

[0181] In one or more embodiments, the emission layer EML may include a delayed fluorescent material. The delayed fluorescent material may serve as a host or a dopant in the emission layer EML.

[0182] The thickness of the emission layer EML can be about to about For example, about to about When the thickness of the emission layer EML is within these ranges, excellent light emitting characteristics can be obtained without significantly increasing the driving voltage.

[0183] main body

[0184] The hole transport host may be a compound having a strong hole property. The expression "a compound having a strong hole property" refers to a compound that easily accepts holes, and such property may be obtained by including a hole accepting part (eg, a hole transporting part).

[0185] Such a hole accepting moiety may be, for example, a π-electron-rich heteroaromatic compound (eg, a carbazole derivative or an indole derivative) and / or an aromatic amine compound.

[0186] The electron transport host may be a compound having a strong electron property. The expression "a compound having a strong electron property" refers to a compound that easily accepts electrons, and such a property may be obtained by including an electron accepting part (eg, an electron transporting part).

[0187] Such an electron accepting moiety may be, for example, a π-electron deficient heteroaromatic compound. For example, the electron accepting moiety may include a nitrogen-containing heteroaromatic compound.

[0188] In the light emitting device according to the embodiment, the host may be a premixed host including a hole transport host and an electron transport host.

[0189] When the compound includes only a hole transporting moiety or only an electron transporting moiety, it is clear whether the compound has hole transporting properties or electron transporting properties in nature.

[0190] In an embodiment, a compound may include both a hole transport moiety and an electron transport moiety. In this embodiment, a simple comparison between the total number of hole transport moieties and the total number of electron transport moieties in the compound may be a criterion for predicting whether a compound is a hole transport compound or an electron transport compound, but it cannot be an absolute criterion. One of the reasons why this simple comparison cannot be an absolute criterion is that the ability of the hole transport moiety to attract holes and the ability of the electron transport moiety to attract electrons are not exactly the same.

[0191] Therefore, a relatively reliable method for determining whether a compound having a set or specific structure is a hole transport compound or an electron transport compound is to directly implement the compound in a device.

[0192] In an embodiment, the hosts may each independently include a compound represented by Formula 301:

[0193] Formula 301

[0194] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21 .

[0195] Wherein, in Formula 301,

[0196] Ar 301 and L 301 may be each independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group,

[0197] xb11 can be 1, 2 or 3,

[0198] xb1 may be an integer selected from 0 to 5,

[0199] R 301 It may be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Alkyl, unsubstituted or substituted with at least one R 10a Substituted C 2 -C 60 Alkenyl, unsubstituted or substituted with at least one R 10a Substituted C 2 -C 60 Alkynyl, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Alkoxy, unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group, -Si(Q301 )(Q 302 )(Q 303 )、-N(Q 301 )(Q 302 )、-B(Q 301 )(Q 302 )、-C(=O)(Q 301 )、-S(=O) 2 (Q 301 ) or -P(=O)(Q 301 )(Q 302 ),

[0200] xb21 may be an integer selected from 1 to 5, and

[0201] Q 301 To Q 303 Can be combined with Q 1 Same as described.

[0202] For example, when xb11 in Formula 301 is 2 or greater, two or more Ar 301 Can be linked to each other via a single bond (eg, a single covalent bond).

[0203] In one or more embodiments, the host may each independently be a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:

[0204] Formula 301-1

[0205]

[0206] Formula 301-2

[0207]

[0208] Among them, in Formula 301-1 and Formula 301-2,

[0209] Ring A 301 To Ring A 304 may be each independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group,

[0210] X 301 Can be O, S, N[(L 304 ) xb4 -R 304 ]、C(R 304 )(R 305) or Si(R 304 )(R 305 ),

[0211] xb22 and xb23 can each independently be 0, 1 or 2,

[0212] L 301 , xb1 and R 301 may each be the same as described herein,

[0213] L 302 To L 304 Can be combined with L independently 301 Same as described,

[0214] xb2 to xb4 may each independently be the same as described in conjunction with xb1, and

[0215] R 302 To R 305 and R 311 To R 314 Each can be combined with R in this article 301 Same as described.

[0216] In one or more embodiments, the host may each independently include an alkaline earth metal complex. In one or more embodiments, the host may each independently include a Be complex (eg, compound H55), a Mg complex, a Zn complex, or any combination thereof.

[0217] In one or more embodiments, the host may include: one selected from Compound H1 to Compound H128; one selected from Compound HT-01 to Compound HT-13; 9,10-di(2-naphthyl)anthracene (ADN); 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN); 9,10-di(2-naphthyl)-2-tert-butyl-anthracene (TBADN); 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP); 1,3-di(9-carbazolyl)benzene (mCP); 1,3,5-tri(carbazolyl-9-yl)benzene (TCP); or any combination thereof:

[0218]

[0219]

[0220]

[0221]

[0222]

[0223]

[0224]

[0225]

[0226] Phosphorescent dopants

[0227] The phosphorescent dopant may include at least one transition metal as a central metal.

[0228] The phosphorescent dopant may include a monodentate ligand, a bidentate ligand, a tridentate ligand, a tetradentate ligand, a pentadentate ligand, a hexadentate ligand, or any combination thereof.

[0229] The phosphorescent dopant may be electrically neutral.

[0230] For example, the phosphorescent dopant may include an organometallic compound represented by Formula 401:

[0231] Formula 401

[0232] M(L 401 ) xc1 (L 402 ) xc2

[0233] Formula 402

[0234]

[0235] Among them, in equation 401 and equation 402,

[0236] M may be a transition metal (e.g., iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), gold (Au), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), rhenium (Re), or thulium (Tm)),

[0237] L 401 may be a ligand represented by Formula 402, and xc1 may be 1, 2 or 3, wherein when xc1 is 2 or greater, two or more L 401 may be the same or different from each other,

[0238] L 402 may be an organic ligand, and xc2 may be 0, 1, 2, 3 or 4, wherein when xc2 is 2 or greater, two or more L 402 may be the same or different from each other,

[0239] X 401 and X 402 may each independently be nitrogen or carbon,

[0240] Ring A 401 and Ring A 402 Can be independently C3 -C 60 Carbocyclic or C 1 -C 60 Heterocyclic group,

[0241] T 401 It may be a single bond (eg, a single covalent bond), -O-, -S-, -C(=O)-, -N(Q 411 )-、-C(Q 411 )(Q 412 )-、-C(Q 411 )=C(Q 412 )-、-C(Q 411 )=or=C=,

[0242] X 403 and X 404 Each of them can be independently a chemical bond (for example, a covalent bond or a coordinate bond, which can also be called a coordinate covalent bond or a coordinate bond), O, S, N (Q 413 )、B(Q 413 )、P(Q 413 )、C(Q 413 )(Q 414 ) or Si(Q 413 )(Q 414 ),

[0243] Q 411 To Q 414 Can be combined with Q 1 Same as described,

[0244] R 401 and R 402 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 20 Alkyl, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 20 Alkoxy, unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group, -Si(Q 401 )(Q 402 )(Q 403 )、-N(Q 401 )(Q 402 )、-B(Q 401 )(Q 402)、-C(=O)(Q 401 )、-S(=O) 2 (Q 401 ) or -P(=O)(Q 401 )(Q 402 ),

[0245] Q 401 To Q 403 Can be combined with Q 1 Same as described,

[0246] xc11 and xc12 may each independently be an integer selected from 0 to 10, and

[0247] * and *' in Formula 402 each indicate a bonding site to M in Formula 401.

[0248] For example, in equation 402, i)X 401 may be nitrogen and X 402 Can be carbon, or ii) X 401 and X 402 Each of may be nitrogen.

[0249] In one or more embodiments, when xc1 in Formula 401 is 2 or greater, two or more L 401 The two rings A 401 Optionally, T as a linker 402 connected to each other, or two or more L 401 The two rings A 402 Optionally, T as a linker 403 Connect with each other. 402 and T 403 Can be combined with T 401 Same as described.

[0250] In formula 401, L 402 It can be an organic ligand. For example, L 402 It may include a halogen group, a diketone group (e.g., an acetylacetonate group), a carboxylic acid group (e.g., a picolinate group), a -C(=O) group, an isonitrile group, a -CN group, a phosphorus-containing group (e.g., a phosphine group, a phosphite group, etc.), or any combination thereof.

[0251] In the ligand of the organometallic compound, adjacent substituents may optionally be bonded together to form a ring.

[0252] The phosphorescent dopant may include, for example, one selected from Compound P1 to Compound P20 or any combination thereof:

[0253]

[0254]

[0255] Fluorescent dopants

[0256] The fluorescent dopant may include an amine-containing compound, a styrene-containing compound, or any combination thereof.

[0257] For example, the fluorescent dopant may include a compound represented by Formula 501:

[0258] Formula 501

[0259]

[0260] Wherein, in Formula 501,

[0261] Ar 501 , L 501 To L 503 , R 501 and R 502 may be each independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group,

[0262] xd1 to xd3 may each independently be 0, 1, 2 or 3, and

[0263] xd4 can be 1, 2, 3, 4, 5 or 6.

[0264] For example, Ar in Formula 501 501 It may be a condensed ring group in which three or more monocyclic groups are condensed together (for example, anthracenyl, 1,2-triphenylenyl, pyrenyl, etc.).

[0265] For example, xd4 in equation 501 may be 2.

[0266] In an embodiment, the fluorescent dopant may include: one selected from Compound FD1 to Compound FD37; DPVBi; DPAVBi; or any combination thereof:

[0267]

[0268]

[0269]

[0270] Delayed fluorescence material

[0271] The emission layer EML may include a delayed fluorescent material.

[0272] In the specification, the delayed fluorescent material may be selected from compounds capable of emitting delayed fluorescence based on a delayed fluorescence emission mechanism.

[0273] The delayed fluorescent material included in the emission layer EML may act as a host or a dopant depending on the types (or kinds) of other materials included in the emission layer EML.

[0274] In an embodiment, the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material may be in the range of about 0 eV to about 0.5 eV. When the difference between the triplet energy level (eV) of the delayed fluorescent material and the singlet energy level (eV) of the delayed fluorescent material is satisfied within the above range, up-conversion of the delayed fluorescent material from the triplet state to the singlet state may occur appropriately or effectively, and thus, the light emitting device 10 may have improved luminous efficiency.

[0275] For example, the delayed fluorescent material may include: i) at least one electron donor (eg, a π-electron-rich C 3 -C 60 Cyclic groups, such as carbazolyl, etc.) and at least one electron acceptor (e.g., sulfoxide, cyano, π-electron-deficient nitrogen-containing C 1 -C 60 cyclic groups, etc.), and ii) a C-type material in which two or more cyclic groups are fused together while sharing a boron (B) atom. 8 -C 60 Polycyclic materials.

[0276] Examples of the delayed fluorescent material (fluorescent dopant compound) may include at least one selected from Compound D-01 to Compound D-14:

[0277]

[0278] Electron transport region in interlayer 130

[0279] The electron transport region may have: i) a single-layer structure consisting of a single layer (composed of a single material), ii) a single-layer structure consisting of a single layer (composed of multiple materials different from each other), or iii) a multilayer structure including multiple layers (including multiple materials different from each other).

[0280] The electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof. For example, the electron transport region may have an electron transport layer / electron injection layer structure or a hole blocking layer / electron transport layer / electron injection layer structure, wherein the layers in each structure are stacked sequentially from the emission layer EML.

[0281] In an embodiment, the electron transport region (eg, a buffer layer, a hole blocking layer, an electron control layer, or an electron transport layer in the electron transport region) may include a metal-free compound including at least one π-electron-deficient nitrogen-containing C 1 -C 60 Cyclic group.

[0282] For example, the electron transport region may include a compound represented by Formula 601:

[0283] Formula 601

[0284] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21 .

[0285] Wherein, in Formula 601,

[0286] Ar 601 and L 601 may be each independently unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group,

[0287] xe11 can be 1, 2 or 3,

[0288] xe1 can be 0, 1, 2, 3, 4 or 5,

[0289] R 601 may be unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 )、-C(=O)(Q 601 )、-S(=O) 2 (Q 601 ) or -P(=O)(Q 601 )(Q 602 ),

[0290] Q 601 To Q 603 Can be combined with Q 1 Same as described,

[0291] xe21 can be 1, 2, 3, 4, or 5, and

[0292] Ar 601 , L 601 and R 601 At least one of them may be independently unsubstituted or substituted by at least one R 10a Substituted π-electron-deficient nitrogen-containing C 1 -C 60 Cyclic group.

[0293] For example, when xe11 in Formula 601 is 2 or greater, two or more Ar 601 Can be linked to each other via a single bond (eg, a single covalent bond).

[0294] In an embodiment, Ar in Formula 601 601 may be unsubstituted or substituted with at least one R 10a Substituted anthracenyl.

[0295] In one or more embodiments, the electron transport region may include a compound represented by Formula 601-1:

[0296] Formula 601-1

[0297]

[0298] Among them, in formula 601-1,

[0299] X 614 Can be N or C(R 614 ), X 615 Can be N or C(R 615 ), and X 616 Can be N or C(R 616 ), where X 614 To X 616 At least one of may be N,

[0300] L 611 To L 613 Can be combined with L 601 Same as described,

[0301] xe611 to xe613 may each be the same as described in conjunction with xe1,

[0302] R 611 To R 613 Can be combined with R 601 Same as described, and

[0303] R 614 To R 616can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 20 Alkyl, C 1 -C 20 Alkoxy, unsubstituted or substituted with at least one R 10a Substituted C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a Substituted C 1 -C 60 Heterocyclic group.

[0304] For example, xe1 and xe611 to xe613 in Formula 601 and Formula 601-1 can each independently be 0, 1, or 2.

[0305] The electron transport region may include: one selected from compound ET1 to compound ET45; one selected from compound ET-01 to compound ET-20; 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP); 4,7-diphenyl-1,10-phenanthroline (Bphen); Alq 3 ; BAlq; TAZ; NTAZ; or any combination thereof:

[0306]

[0307]

[0308]

[0309]

[0310] The thickness of the electron transport region can be about to about For example, about to about When the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thickness of the hole blocking layer may be about to about For example, about to about The thickness of the electron transport layer can be in the range of about to about For example, about to about When the thickness of the electron transport region, the hole blocking layer and / or the electron transport layer is within these ranges, appropriate or satisfactory electron transport characteristics may be obtained without significantly increasing the driving voltage.

[0311] In addition to the aforementioned materials, the electron transport region (eg, an electron transport layer in the electron transport region) may further include a metal-containing material.

[0312] The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ion of the alkali metal complex may be a Li ion, a Na ion, a K ion, a Rb ion, or a Cs ion, and the metal ion of the alkaline earth metal complex may be a Be ion, a Mg ion, a Ca ion, a Sr ion, or a Ba ion. The ligand coordinated with the metal ion of the alkali metal complex or the metal ion of the alkaline earth metal complex may include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.

[0313] For example, the metal-containing material may include a Li complex. The Li complex may include, for example, compound ET-D1 (Liq) and / or compound ET-D2:

[0314]

[0315] The electron transport region may include an electron injection layer that facilitates injection of electrons from the second electrode 150. The electron injection layer may directly contact the second electrode 150.

[0316] The electron injection layer may have: i) a single-layer structure consisting of a single layer (composed of a single material), ii) a single-layer structure consisting of a single layer (composed of multiple materials different from each other), or iii) a multilayer structure including multiple layers (including multiple materials different from each other).

[0317] In an embodiment, the electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0318] The alkali metal may include Li, Na, K, Rb, Cs or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd or any combination thereof.

[0319] The alkali metal-containing compound, alkaline earth metal-containing compound and rare earth metal-containing compound may be oxides, halides (eg, fluorides, chlorides, bromides and / or iodides) and / or tellurides of alkali metals, alkaline earth metals and / or rare earth metals, or any combination thereof.

[0320] Alkali metal compounds may include: alkali metal oxides, such as Li2 O, Cs 2 O and / or K 2 O, etc.; alkali metal halides, such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and / or KI, etc.; or any combination thereof. The alkaline earth metal compound may include alkaline earth metal oxides, such as BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1) and / or Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1), etc. The rare earth metal compound may include YbF 3 , ScF 3 , Sc 2 O 3 , Y 2 O 3 , Ce 2 O 3 , GdF 3 , TbF 3 , YbI 3 , ScI 3 , TbI 3 or any combination thereof. In an embodiment, the rare earth metal compound may include lanthanide metal tellurides. Examples of lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La 2 Te 3 , Ce 2 Te 3 , Pr 2 Te 3 , Nd 2 Te 3 , Pm 2 Te 3 , Sm 2 Te 3 , Eu 2 Te 3 , Gd 2 Te 3 , Tb 2 Te 3 , Dy 2 Te 3 , Ho 2 Te 3 , Er 2 Te 3 , Tm 2 Te 3 , Yb 2 Te 3He Lu 2 Te 3 wait.

[0321] The alkali metal complex, alkaline earth metal complex and rare earth metal complex may include: i) one of the ions of alkali metal, alkaline earth metal and rare earth metal, and ii) a ligand bonded to the metal ion, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene or any combination thereof.

[0322] In an embodiment, as described above, the electron injection layer may be composed of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof. In one or more embodiments, the electron injection layer may further include an organic material (e.g., a compound represented by Formula 601).

[0323] In one or more embodiments, the electron injection layer may be composed of: i) an alkali metal compound (e.g., an alkali metal halide), or ii) a) an alkali metal compound (e.g., an alkali metal halide), and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposition layer, a RbI:Yb co-deposition layer, and / or a LiF:Yb co-deposition layer, etc.

[0324] When the electron injection layer further includes an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex or any combination thereof may be uniformly or non-uniformly dispersed in a matrix including the organic material.

[0325] The thickness of the electron injection layer can be about to about For example, about to about When the thickness of the electron injection layer is within these ranges, appropriate or satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0326] In an embodiment, the compound included in the hole blocking layer, the compound included in the electron transport layer, and the electron transport host compound may each independently be the same as or different from each other.

[0327] The second electrode 150

[0328] The second electrode 150 is on the interlayer 130 having the aforementioned structure. The second electrode 150 may be a cathode as an electron injection electrode, and a metal, an alloy, an electrically conductive compound, or any combination thereof each having a low work function may be used as a material for forming the second electrode 150.

[0329] The second electrode 150 may include Li, Ag, Mg, Al, Al-Li, Ca, Mg-In, Mg-Ag, Yb, Ag-Yb, ITO, IZO, or any combination thereof. The second electrode 150 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0330] The second electrode 150 may have a single-layer structure or a multi-layer structure including a plurality of layers.

[0331] Capping layer

[0332] The first capping layer may be on the outside of the first electrode 110, and / or the second capping layer may be on the outside of the second electrode 150. In more detail, the light emitting device 10 may have a structure in which the first capping layer, the first electrode 110, the interlayer 130, and the second electrode 150 are sequentially stacked in the stated order, a structure in which the first electrode 110, the interlayer 130, the second electrode 150 and the second capping layer are sequentially stacked in the stated order, or a structure in which the first capping layer, the first electrode 110, the interlayer 130, the second electrode 150 and the second capping layer are sequentially stacked in the stated order.

[0333] Light generated in the emission layer EML of the interlayer 130 of the light-emitting device 10 can be extracted toward the outside through the first electrode 110 as a semi-transmissive electrode or a transmissive electrode and the first capping layer. Light generated in the emission layer EML of the interlayer 130 of the light-emitting device 10 can be extracted toward the outside through the second electrode 150 as a semi-transmissive electrode or a transmissive electrode and the second capping layer.

[0334] The first capping layer and the second capping layer can increase the external emission efficiency according to the principle of constructive interference. Accordingly, the light extraction efficiency of the light emitting device 10 can be increased, and accordingly, the light emitting efficiency of the light emitting device 10 can be improved.

[0335] Each of the first capping layer and the second capping layer may include a material having a refractive index of 1.6 or greater (at a wavelength of 589 nm).

[0336] The first capping layer and the second capping layer may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.

[0337] At least one selected from the first capping layer and the second capping layer may each independently include a carbocyclic compound, a heterocyclic compound, an amine-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine-containing compound may be optionally substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In an embodiment, at least one selected from the first capping layer and the second capping layer may each independently include an amine-containing compound.

[0338] In one or more embodiments, at least one selected from the first capping layer and the second capping layer may each independently include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof.

[0339] In one or more embodiments, at least one selected from the first capping layer and the second capping layer may each independently include: one selected from compounds HT28 to HT33; one selected from compounds CP1 to CP6; β-NPB; or any combination thereof:

[0340]

[0341] Electronic devices

[0342] The light emitting device may be included in various suitable electronic devices. For example, the electronic device including the light emitting device may be a light emitting device and / or an authentication device, etc.

[0343] In addition to the light emitting device, the electronic device (e.g., light emitting device) may further include i) a color filter, ii) a color conversion layer, or iii) a color filter and a color conversion layer. The color filter and / or the color conversion layer may be provided in at least one direction in which the light emitted from the light emitting device travels. For example, the light emitted from the light emitting device may be blue light. The details of the light emitting device may be the same as the description provided herein. In an embodiment, the color conversion layer may include quantum dots.

[0344] The electronic device may include a first substrate, the first substrate may include a plurality of sub-pixel regions, the color filter may include a plurality of color filter regions respectively corresponding to the plurality of sub-pixel regions, and the color conversion layer may include a plurality of color conversion regions respectively corresponding to the plurality of sub-pixel regions.

[0345] A pixel defining layer may be provided between the plurality of sub-pixel regions to define each of the plurality of sub-pixel regions.

[0346] The color filter may further include a plurality of color filter regions and a light shielding pattern between the plurality of color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light shielding pattern between the plurality of color conversion regions.

[0347] The plurality of color filter regions (or the plurality of color conversion regions) may include: a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, wherein the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths from each other. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. For example, the plurality of color filter regions (or the plurality of color conversion regions) may include quantum dots. In some embodiments, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. Each of the first region, the second region, and / or the third region may further include a scatterer (e.g., a light scatterer).

[0348] For example, in a light emitting device that emits a first light, the first region may absorb the first light to emit 1-1 color light, the second region may absorb the first light to emit 2-1 color light, and the third region may absorb the first light to emit 3-1 color light. Here, the 1-1 color light, the 2-1 color light, and the 3-1 color light may have different maximum emission wavelengths from each other. In some embodiments, the first light may be blue light, the 1-1 color light may be red light, the 2-1 color light may be green light, and the 3-1 color light may be blue light.

[0349] In addition to the aforementioned light emitting device, the electronic device may further include a thin film transistor. The thin film transistor may include a source electrode, a drain electrode and an active layer, wherein any one selected from the source electrode and the drain electrode may be electrically connected to any one selected from the first electrode and the second electrode of the light emitting device.

[0350] The thin film transistor may further include a gate electrode and / or a gate insulating film, etc.

[0351] The active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, and / or an oxide semiconductor, etc.

[0352] The electronic device may further include a sealing portion for sealing the light emitting device. The sealing portion may be between the color filter and / or the color conversion layer and the light emitting device. The sealing portion allows light from the light emitting device to be extracted to the outside, and at the same time (e.g., synchronously) prevents or reduces the penetration of ambient air and / or moisture into the light emitting device. The sealing portion may be a sealing substrate including a transparent glass substrate and / or a plastic substrate. The sealing portion may be a thin film encapsulation layer including at least one of an organic layer and an inorganic layer. When the sealing portion is a thin film encapsulation layer, the electronic device may be flexible.

[0353] Depending on the purpose of the electronic device, in addition to the color filter and / or the color conversion layer, various appropriate functional layers may be additionally on the sealing portion. Examples of the functional layer may include a touch screen layer and a polarization layer, etc. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, and / or an infrared touch screen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual by using biometric information of a living body (e.g., a fingertip, a pupil, etc.).

[0354] In addition to the light emitting device as described above, the authentication device may further include a biometric information collector.

[0355] The electronic device can be applied to various appropriate displays, light sources, lighting equipment, personal computers (e.g., mobile personal computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, electronic game consoles, medical tools (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse measuring devices, pulse wave measuring devices, electrocardiogram displays, ultrasonic diagnostic devices and / or endoscope displays), fish finders, various appropriate measuring tools, instruments (e.g., instruments for vehicles, aircraft and / or ships) and / or projectors, etc.

[0356] Figure 2 and Figure 3 Description

[0357] Figure 2 is a schematic cross-sectional view of an electronic device according to an embodiment.

[0358] Figure 2 The electronic device includes a substrate 100, a thin film transistor (TFT), a light emitting device, and a packaging portion 300 that seals the light emitting device.

[0359] The substrate 100 may be a flexible substrate, a glass substrate, and / or a metal substrate. The buffer layer 210 may be on the substrate 100. The buffer layer 210 may prevent or reduce penetration of impurities through the substrate 100 and provide a flat surface on the substrate 100.

[0360] The TFT may be on the buffer layer 210. The TFT may include an active layer 220, a gate electrode 240, a source electrode 260, and a drain electrode 270.

[0361] The active layer 220 may include an inorganic semiconductor (such as silicon and / or polysilicon), an organic semiconductor, and / or an oxide semiconductor, and may include a source region, a drain region, and a channel region.

[0362] A gate insulating film 230 for insulating (eg, electrically insulating) the active layer 220 from the gate electrode 240 may be on the active layer 220 , and the gate electrode 240 may be on the gate insulating film 230 .

[0363] An interlayer insulating film 250 may be on the gate electrode 240. The interlayer insulating film 250 may be between the gate electrode 240 and the source electrode 260 and between the gate electrode 240 and the drain electrode 270 to insulate (eg, electrically insulate) these electrodes from each other.

[0364] Source electrode 260 and drain electrode 270 may be on interlayer insulating film 250. Interlayer insulating film 250 and gate insulating film 230 may expose source and drain regions of active layer 220, and source electrode 260 and drain electrode 270 may contact exposed portions of source and drain regions of active layer 220.

[0365] The TFT may be electrically connected to the light emitting device to drive the light emitting device, and may be covered and protected by the passivation layer 280. The passivation layer 280 may include an inorganic insulating film (e.g., an inorganic electrical insulating film), an organic insulating film (e.g., an organic electrical insulating film), or any combination thereof. The light emitting device may be provided on the passivation layer 280. The light emitting device may include a first electrode 110, an interlayer 130, and a second electrode 150.

[0366] The first electrode 110 may be on the passivation layer 280. The passivation layer 280 may expose a portion of the drain electrode 270 without completely covering the drain electrode 270, and the first electrode 110 may be connected to the exposed portion of the drain electrode 270.

[0367] A pixel defining layer 290 including an insulating material (e.g., an electrically insulating material) may be on the first electrode 110. The pixel defining layer 290 may expose a set region or a specific region of the first electrode 110, and the interlayer 130 may be provided in the exposed region of the first electrode 110. The pixel defining layer 290 may be a polyimide-based organic film and / or a polyacrylic organic film. In some embodiments, at least some layers of the interlayer 130 may extend beyond the upper portion of the pixel defining layer 290, and may thus be provided in the form of a common layer.

[0368] The second electrode 150 may be on the interlayer 130, and the capping layer 170 may be additionally on the second electrode 150. The capping layer 170 may cover the second electrode 150.

[0369] The encapsulation part 300 may be on the capping layer 170. The encapsulation part 300 may be on the light emitting device to protect the light emitting device from moisture and / or oxygen. The encapsulation part 300 may include: an inorganic film including silicon nitride (SiN x ), silicon oxide (SiO x), indium tin oxide, indium zinc oxide or any combination thereof; an organic film comprising polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyvinyl sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), epoxy resin (e.g., aliphatic glycidyl ether (AGE), etc.) or any combination thereof; or any combination of an inorganic film and an organic film.

[0370] Figure 3 is a schematic cross-sectional view of an electronic device according to another embodiment.

[0371] Figure 3 Electronic equipment and Figure 2 The electronic device is substantially the same as the one of the embodiment of the present invention, except that the light shielding pattern 500 and the functional area 400 are additionally on the packaging portion 300. The functional area 400 may be i) a color filter area, ii) a color conversion area, or iii) a combination of a color filter area and a color conversion area. In one or more embodiments, Figure 3 The light-emitting device included in the electronic device may be a series light-emitting device.

[0372] Manufacturing method

[0373] The layer constituting the hole transport region, the emission layer EML and the layer constituting the electron transport region can be formed in a set area or a specific area by using various appropriate methods (such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, inkjet printing, laser printing and / or laser induced thermal imaging, etc.).

[0374] When the layer constituting the hole transport region, the emission layer EML, and the layer constituting the electron transport region are formed by vacuum deposition, the deposition temperature may be in the range of about 100° C. to about 500° C. ... -8 To about 10 -3 The vacuum degree is within the range of torr and about / second to about The deposition is performed at a deposition rate in the range of 1000 Å / sec, depending on the material included in the layer to be formed and the structure of the layer to be formed.

[0375] When a layer constituting a hole transport region, an emission layer EML, and a layer constituting an electron transport region are formed by spin coating, the spin coating may be performed at a coating speed of about 2,000 rpm to about 5,000 rpm and a heat treatment temperature of about 80° C. to about 200° C., considering the materials included in the layers to be formed and the structure of the layers to be formed.

[0376] General Definition of Substituents

[0377] As used herein, the term "C 3 -C 60The term "carbocyclic group" refers to a cyclic group consisting only of carbon atoms as ring atoms and having 3 to 60 carbon atoms, for example, 3 -C 50 Carbocyclic group, C 3 -C 40 Carbocyclic group, C 3 -C 30 Carbocyclic group, C 3 -C 20 Carbocyclic or C 3 -C 10 Carbocyclic groups, and as used herein, the term "C 1 -C 60 The "heterocyclic group" refers to a cyclic group having 1 to 60 carbon atoms and further having a hetero atom as a ring-forming atom in addition to carbon atoms, for example, C 1 -C 50 Heterocyclic group, C 1 -C 40 Heterocyclic group, C 1 -C 30 Heterocyclic group, C 1 -C 20 Heterocyclic or C 1 -C 10 Heterocyclic group. 3 -C 60 Carbocyclic and C 1 -C 60 The heterocyclic group may be: a monocyclic group consisting of one ring; or a polycyclic group in which two or more rings are fused to each other. 1 -C 60 The number of ring-forming atoms of the heterocyclic group may be 3 to 61.

[0378] As used herein, the term "cyclic group" may include C 3 -C 60 Carbocyclic and C 1 -C 60 Both heterocyclic groups.

[0379] As used herein, the term "π-electron-rich C 3 -C 60 The term "cyclic group" refers to a cyclic group having 3 to 60 carbon atoms and not including *-N=*' as a ring-forming part, and the term "π-electron-deficient nitrogen-containing C 1 -C 60 The "cyclic group" refers to a heterocyclic group having 1 to 60 carbon atoms and including *-N=*' as a ring-forming part.

[0380] For example,

[0381] C 3 -C60 The carbocyclic group may be i) a group T1, or ii) a fused ring group in which two or more groups T1 are fused to each other (e.g., cyclopentadienyl, adamantyl, norbornyl, phenyl, pentalenyl, naphthyl, azulenyl, indacenyl, acenaphthenyl, phenalenyl, phenanthrenyl, anthracenyl, fluoranthenyl, triphenylene, pyrenyl, 1,2-triphenylene, perylene, pentaphenanthrenyl, heptalenyl, tetracenyl, phenanthrenyl, hexenyl, pentacenyl, rubenyl, coronenyl, ovalenyl, indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenophenanthryl or indenoanthryl),

[0382] C 1 -C 60 The heterocyclic group may be i) a group T2, ii) a condensed ring group in which at least two groups T2 are condensed to each other, or iii) a condensed ring group in which at least one group T2 and at least one group T1 are condensed to each other (e.g., pyrrolyl, thienyl, furanyl, indolyl, benzindolyl, naphthoindolyl, isoindolyl, benzisoindolyl, naphthoisoindolyl, benzothiorolyl, benzothiophenyl, benzofuranyl, carbazolyl, dibenzothiorolyl, dibenzothiophenyl, dibenzofuranyl, indenocarbazolyl, indolecarbazolyl, benzofuranocarbazolyl, benzothiophenylcarbazolyl, benzothiorolocarbazolyl, benzoindolcarbazolyl, benzocarbazolyl, benzonaphthofuranyl, benzonaphthothienyl, benzonaphthothiorolyl, benzofuranodibenzofuranyl, benzofuranodibenzothienyl, benzothiophenodibenzothienyl, pyrazolyl, imidazolyl, triazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisothiazolyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, isoquinolyl , benzoquinolyl, benzisoquinolyl, quinoxalinyl, benzoquinoxalinyl, quinazoline, benzoquinazolinyl, phenanthroline, cinnolinyl, phthalazinyl, naphthyridinyl, imidazopyridinyl, imidazopyrimidinyl, imidazotriazine, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothioyl, azadibenzothiophenyl or azadibenzofuranyl, etc.),

[0383] Pi-electron-rich C 3 -C 60 The cyclic group may be i) a group T1, ii) a fused ring group in which two or more groups T1 are fused to each other, iii) a group T3, iv) a fused ring group in which two or more groups T3 are fused to each other, or v) a fused ring group in which at least one group T3 and at least one group T1 are fused to each other (e.g., C 3 -C 60carbocyclic group, 1H-pyrrolyl, thiolyl, borocyclopentadienyl, 2H-pyrrolyl, 3H-pyrrolyl, thienyl, furyl, indolyl, benzindolyl, naphthoindolyl, isoindolyl, benzisoindolyl, naphthoisoindolyl, benzothiolyl, benzothiophenyl, benzofuranyl, carbazolyl, dibenzothiolyl, dibenzothiophenyl, dibenzofuranyl, indenocarbazolyl, indolecarbazolyl, benzofuranocarbazolyl, benzothiophenylcarbazolyl, benzothiophenylcarbazolyl, benzothiophenylcarbazolyl, benzothiophenylcarbazolyl, benzoindolcarbazolyl, benzocarbazolyl, benzonaphthofuranyl, benzonaphthothienyl, benzonaphthothiolyl, benzofuranodibenzofuranyl, benzofuranodibenzothiophenyl or benzothiophenyldibenzothiophenyl, etc.),

[0384] π-electron-deficient nitrogen-containing C 1 -C 60 The cyclic group may be i) a group T4, ii) a fused ring group in which at least two groups T4 are fused to each other, iii) a fused ring group in which at least one group T4 and at least one group T1 are fused to each other, iv) a fused ring group in which at least one group T4 and at least one group T3 are fused to each other, or v) a fused ring group in which at least one group T4, at least one group T1 and at least one group T3 are fused to each other (e.g., pyrazolyl, imidazole, triazole, oxazolyl, isoxazolyl, oxadiazole, thiazolyl, isothiazole, thiadiazolyl, benzopyrazolyl, benzimidazolyl, benzoxazolyl, benzisoxazolyl, benzothiazolyl, benzisothiazolyl, pyridinyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, isoquinolyl, benzoquinolyl, benzisoquinolyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, phenanthrolinyl, cinnolinyl, phthalazinyl, naphthyridinyl, imidazopyridinyl, imidazopyrimidinyl, imidazotriazinyl, imidazopyrazinyl, imidazopyridazinyl, azacarbazolyl, azafluorenyl, azadibenzothiazolyl, azadibenzothiophenyl and / or azadibenzofuranyl, etc.),

[0385] The radical T1 can be cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, cycloheptenyl, adamantyl, norbornane (or bicyclo[2.2.1]heptane), norbornyl, bicyclo[1.1.1]pentane, bicyclo[2.1.1]hexane, bicyclo[2.2.2]octane or phenyl,

[0386] The radical T2 can be furanyl, thienyl, 1H-pyrrolyl, thiolyl, borocyclopentyl, 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azathiolyl, azaborolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, tetraazinyl, pyrrolidinyl, imidazolidinyl, dihydropyrrolyl, piperidinyl, tetrahydropyridinyl, dihydropyridinyl, hexahydropyrimidinyl, tetrahydropyrimidinyl, dihydropyrimidinyl, piperazinyl, tetrahydropyrazinyl, dihydropyrazinyl, tetrahydropyridazinyl or dihydropyridazinyl,

[0387] The group T3 may be furyl, thienyl, 1H-pyrrolyl, thiolyl or borocyclopentadienyl, and

[0388] The group T4 can be 2H-pyrrolyl, 3H-pyrrolyl, imidazolyl, pyrazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, oxadiazolyl, thiazolyl, isothiazolyl, thiadiazolyl, azathioyl, azaborolyl, pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl or tetrazinyl.

[0389] As used herein, the term "cyclic group, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic, π-electron-rich C 3 -C 60 Cyclic groups or nitrogen-containing C with π-electron deficiency 1 -C 60 The term "cyclic group" refers to a group condensed with any appropriate cyclic group, monovalent group or polyvalent group (e.g., divalent group, trivalent group, tetravalent group, etc.) according to the structure of the formula using the corresponding term. For example, "phenyl" may be benzo, phenyl or phenylene, etc., which can be easily understood by a person of ordinary skill in the art based on the structure of the formula including "phenyl".

[0390] Unit Price C 3 -C 60 Carbocyclic groups and monovalent C 1 -C 60 Examples of the heterocyclic group may include C 3 -C 10 Cycloalkyl, C 1 -C 10 Heterocycloalkyl, C 3 -C 10 Cycloalkenyl, C 1 -C 10 Heterocycloalkenyl, C 6 -C 60 Aryl, C 1 -C 60heteroaryl, monovalent non-aromatic fused polycyclic group and monovalent non-aromatic fused heteropolycyclic group. 3 -C 60 Carbocyclic groups and divalent C 1 -C 60 Examples of the heterocyclic group may include C 3 -C 10 Cycloalkylene, C 1 -C 10 Heterocycloalkylene, C 3 -C 10 Cycloalkenylene, C 1 -C 10 Heterocycloalkenylene, C 6 -C 60 Arylene, C 1 -C 60 a heteroarylene group, a divalent non-aromatic fused polycyclic group, and a divalent non-aromatic fused heteropolycyclic group.

[0391] As used herein, the term "C 1 -C 60 "Alkyl" refers to a straight or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms, for example, 1 -C 50 Alkyl, C 1 -C 30 Alkyl, C 1 -C 20 Alkyl or C 1 -C 10 The term "alkyl" as used herein may include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl, and tert-decyl. As used herein, the term "alkyl" may include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl, and tert-decyl. 1 -C 60 "Alkylene" refers to C 1 -C 60 The alkyl group has substantially the same structure as a divalent group.

[0392] As used herein, the term "C 2 -C 60 "Alkenyl" refers to 2 -C 60 The alkyl group is a monovalent hydrocarbon group having at least one carbon-carbon double bond in the main chain (e.g., in the middle) or at the end (e.g., terminal). 2 -C 30 Alkenyl, C 2 -C 20Alkenyl or C 2 -C 10 The term "C-alkenyl" as used herein may include vinyl, propenyl, butenyl, and the like. 2 -C 60 "Alkenylene" refers to C 2 -C 60 The alkenyl group has a divalent group having substantially the same structure.

[0393] As used herein, the term "C 2 -C 60 "Alkynyl" refers to a C 2 -C 60 The alkyl group is a monovalent hydrocarbon group having at least one carbon-carbon triple bond in the main chain (e.g., in the middle) or at the end (e.g., terminal). 2 -C 30 Alkynyl, C 2 -C 20 Alkynyl or C 2 -C 10 The term "C ynyl" as used herein may include ethynyl, propynyl, and the like. 2 -C 60 "Alkynylidene" refers to a C 2 -C 60 Alkynyl groups have substantially the same structure as a divalent group.

[0394] As used herein, the term "C 1 -C 60 "Alkoxy" refers to -OA 101 (A 101 C 1 -C 60 Alkyl) represented by a monovalent group, for example, C 1 -C 30 Alkoxy, C 1 -C 20 Alkoxy or C 1 -C 10 Alkoxy group, and examples thereof may include methoxy group, ethoxy group, isopropoxy group, and the like.

[0395] As used herein, the term "C 3 -C 10 The term "cycloalkyl" as used herein refers to a monovalent saturated hydrocarbon ring group having 3 to 10 carbon atoms, and examples thereof may include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentyl, bicyclo[2.1.1]hexyl and bicyclo[2.2.2]octyl, and the like. 3 -C 10 "Cycloalkylene" refers to3 -C 10 The cycloalkyl group has a divalent group having substantially the same structure.

[0396] As used herein, the term "C 1 -C 10 The term "heterocycloalkyl" as used herein refers to a monovalent cyclic group of 1 to 10 carbon atoms further including at least one heteroatom as a ring-forming atom in addition to carbon atoms, and examples thereof may include 1,2,3,4-oxatriazolidinyl, tetrahydrofuranyl, tetrahydrothienyl, and the like. 1 -C 10 "Heterocycloalkylene" refers to a C 1 -C 10 The heterocycloalkyl group has substantially the same structure as a divalent group.

[0397] As used herein, the term "C 3 -C 10 The term "cycloalkenyl" as used herein refers to a monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring and having no aromaticity (e.g., not aromatic), and examples thereof may include cyclopentenyl, cyclohexenyl, cycloheptenyl, and the like. 3 -C 10 "Cycloalkenylene" refers to 3 -C 10 The cycloalkenyl group has a divalent group having substantially the same structure.

[0398] As used herein, the term "C 1 -C 10 The term "heterocycloalkenyl" refers to a monovalent cyclic group of 1 to 10 carbon atoms which further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms and at least one double bond in its ring structure. 1 -C 10 Examples of heterocycloalkenyl groups may include 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuranyl, 2,3-dihydrothienyl, and the like. As used herein, the term “C 1 -C 10 "Heterocycloalkenylene" refers to a C 1 -C 10 The heterocycloalkenyl group has a divalent group having substantially the same structure.

[0399] As used herein, the term "C 6 -C 60 "Aryl" refers to a monovalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms, for example, 6 -C 50 Aryl, C 6 -C 40 Aryl, C6 -C 30 Aryl, C 6 -C 20 Aryl or C 6 -C 15 Aryl, and as used herein the term "C 6 -C 60 "Arylene" refers to a divalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. 6 -C 60 Examples of aryl groups may include phenyl, pentalenyl, naphthyl, azulenyl, indacenyl, acenaphthenyl, phenanthrenyl, phenanthrenyl, anthracenyl, fluoranthenyl, triphenylene, pyrenyl, 1,2-triphenylenyl, peryl, pentaphenanthrenyl, heptalenyl, tetracenyl, pyrenyl, hexenyl, pentacene, rubenyl, coronenyl, and ovalenyl. 6 -C 60 Aryl and C 6 -C 60 When the arylene groups each include two or more rings, these rings may be fused to each other.

[0400] As used herein, the term "C 1 -C 60 The term "heteroaryl" refers to a monovalent group of a heterocyclic aromatic system having 1 to 60 carbon atoms and further including at least one heteroatom as a ring-forming atom in addition to carbon atoms, for example, C 1 -C 50 Heteroaryl, C 1 -C 40 Heteroaryl, C 1 -C 30 Heteroaryl, C 1 -C 20 Heteroaryl or C 1 -C 10 As used herein, the term "C 1 -C 60 The term "heteroarylene" refers to a divalent group of a heterocyclic aromatic system having 1 to 60 carbon atoms and further including at least one heteroatom as a ring-forming atom in addition to carbon atoms. 1 -C 60 Examples of heteroaryl groups may include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, benzoquinolyl, isoquinolyl, benzoisoquinolyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, cinnolinyl, phenanthrolinyl, phthalazinyl, naphthyridinyl, and the like. 1 -C 60 Heteroaryl and C 1 -C 60 When the heteroarylene groups each include two or more rings, these rings may be fused to each other.

[0401] As used herein, the term "monovalent non-aromatic fused polycyclic group" refers to a monovalent group (e.g., having 8 to 60 carbon atoms) having two or more rings fused to each other, having only carbon atoms as ring-forming atoms, and having no aromaticity in its entire molecular structure (e.g., not aromatic when considered as a whole), for example, C 8 -C 60 Monovalent non-aromatic fused polycyclic group, C 8 -C 50 Monovalent non-aromatic fused polycyclic group, C 8 -C 40 Monovalent non-aromatic fused polycyclic group, C 8 -C 30 Monovalent non-aromatic fused polycyclic group or C 8 -C 20 Monovalent non-aromatic fused polycyclic group. Examples of the monovalent non-aromatic fused polycyclic group may include indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenophenanthryl, indenoanthryl, and the like. The term "divalent non-aromatic fused polycyclic group" as used herein refers to a divalent group having substantially the same structure as the above-mentioned monovalent non-aromatic fused polycyclic group.

[0402] The term "monovalent non-aromatic fused heteropolycyclic group" as used herein refers to a monovalent group (e.g., having 1 to 60 carbon atoms) having two or more rings fused to each other, further including at least one heteroatom as a ring-constituting atom in addition to carbon atoms, and having non-aromaticity (e.g., not aromatic when considered as a whole) in its entire molecular structure, for example, C 1 -C 60 Monovalent non-aromatic fused heteropolycyclic group, C 1 -C 50 Monovalent non-aromatic fused heteropolycyclic group, C 1 -C 40 Monovalent non-aromatic fused heteropolycyclic group, C 1 -C 30 A monovalent non-aromatic fused heteropolycyclic group or C 1 -C 20Monovalent non-aromatic condensed heteropolycyclic group. Examples of the monovalent non-aromatic condensed heteropolycyclic group are pyrrolyl, thienyl, furanyl, indolyl, benzindolyl, naphthoindolyl, isoindolyl, benzisoindolyl, naphthoisoindolyl, benzothioyl, benzothiophenyl, benzofuranyl, carbazolyl, dibenzothioyl, dibenzothiophenyl, dibenzofuranyl, azacarbazolyl, azafluorenyl, azadibenzothioyl, azadibenzothiophenyl, azadibenzofuranyl, pyrazolyl, imidazolyl, triazolyl, tetrazolyl, oxazolyl, isoxazolyl, thiazolyl, isothiazolyl, oxadiazolyl, thiadiazolyl, The term "divalent non-aromatic fused heteropolycyclic group" as used herein refers to a divalent group having substantially the same structure as the monovalent non-aromatic fused heteropolycyclic group described above.

[0403] As used herein, the term "C 6 -C 60 Aryloxy" indicates -OA 102 (A 102 C 6 -C 60 Aryl), for example, C 6 -C 50 Aryloxy, C 6 -C 40 Aryloxy, C 6 -C 30 Aryloxy, C 6 -C 20 Aryloxy or C 6 -C 15 Aryloxy, and as used herein the term "C 6 -C 60 Arylthio" indicates -SA 103 (A 103 C 6 -C 60 Aryl), for example, C 6 -C 50 Arylthio, C 6 -C 40 Arylthio, C 6 -C 30 Arylthio, C 6 -C 20Arylthio or C 6 -C 15 Arylthio.

[0404] As used herein, the term "C 7 -C 60 "Aralkyl" refers to -A 104 A 105 (A 104 C 1 -C 54 Alkylene, and A 105 C 6 -C 59 Aryl), for example, C 7 -C 50 Aralkyl, C 7 -C 40 Aralkyl, C 7 -C 30 Aralkyl, C 7 -C 20 Arylalkyl or C 7 -C 15 Aralkyl, and as used herein the term "C 2 -C 60 "Heteroaralkyl" refers to -A 106 A 107 (A 106 C 1 -C 59 Alkylene, and A 107 C 1 -C 59 Heteroaryl), for example, C 2 -C 50 Heteroarylalkyl, C 2 -C 40 Heteroarylalkyl, C 2 -C 30 Heteroarylalkyl, C 2 -C 20 Heteroaralkyl or C 2 -C 15 Heteroaralkyl.

[0405] As used herein, the term " 10a " can be:

[0406] deuterium, -F, -Cl, -Br, -I, hydroxy, cyano or nitro;

[0407] Each unsubstituted or substituted C 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl or C1 -C 60 Alkoxy: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Aralkyl, C 2 -C 60 Heteroaralkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O) 2 (Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof;

[0408] Each unsubstituted or substituted C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl or C 2 -C 60 Heteroaralkyl: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl, C 1 -C 60 Alkoxy, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60Arylthio, C 7 -C 60 Aralkyl, C 2 -C 60 Heteroaralkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O) 2 (Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof; or

[0409] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O) 2 (Q 31 ) or -P(=O)(Q 31 )(Q 32 ).

[0410] In the manual, Q 1 , Q 11 To Q 13 , Q 21 To Q 23 and Q 31 To Q 33 can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C 1 -C 60 Alkyl; C 2 -C 60 Alkenyl; C 2 -C 60 Alkynyl; or C 1 -C 60 Alkoxy; or

[0411] Each unsubstituted or substituted C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 7 -C 60 Arylalkyl or C 2-C 60 Heteroaralkyl: deuterium, -F, cyano, C 1 -C 60 Alkyl, C 1 -C 60 Alkoxy, phenyl, biphenyl or any combination thereof.

[0412] As used herein, the term "heteroatom" refers to any atom other than a carbon atom and a hydrogen atom. Examples of heteroatoms may include O, S, N, P, Si, B, Ge, Se, and any combination thereof.

[0413] The term “transition metal” used herein includes hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), etc.

[0414] As used herein, "Ph" refers to phenyl, as used herein, "Me" refers to methyl, as used herein, "Et" refers to ethyl, as used herein, "ter-Bu" or "Bu" refers to ethyl. t " refers to a tert-butyl group, and "OMe" as used herein refers to a methoxy group.

[0415] As used herein, the term "biphenyl" refers to a "phenyl group substituted by a phenyl group". In other words, a "biphenyl group" may be a group having C 6 -C 60 A phenyl group substituted with an aryl group as a substituent.

[0416] As used herein, the term "terphenyl" refers to a "phenyl group substituted with a biphenyl group". In other words, a "terphenyl group" may be a phenyl group substituted with a C 6 -C 60 Aryl substituted C 6 -C 60 A phenyl group substituted with an aryl group as a substituent.

[0417] The maximum number of carbon atoms in the substituent definition is for example only. 1 -C 60 The maximum number of carbon atoms in an alkyl group is 60, which is an example, and the definition of an alkyl group also applies to C 1 -C 20 The same applies to other embodiments.

[0418] Unless otherwise defined, * and *' as used herein each refer to a bonding site to an adjacent atom in the corresponding formula.

[0419] Hereinafter, a compound and a light emitting device according to an embodiment will be described in more detail with reference to Examples.

[0420] Example

[0421] Manufacturing of light-emitting devices

[0422] Comparative Example 1

[0423] As the anode, the glass 0.7T / Ag / ITO It was cut into a size of 50 mm×50 mm, cleaned by ultrasonication with isopropyl alcohol and pure water for 5 minutes each, and then exposed to ultraviolet rays and ozone for 30 minutes. The obtained glass substrate was placed on a vacuum deposition apparatus.

[0424] Compound HT3 was vacuum-deposited on a glass substrate to form a hole transport layer (HTL) having a thickness of 125 nm.

[0425] Next, the compound HT-13 was vacuum deposited on the hole transport layer to form an electron blocking layer (EBL) having a thickness of 5 nm. Subsequently, the compound HT-13 and the compound ET-13 as the host in a weight ratio of 6:4, the compound P20 as the phosphorescent dopant, and the compound D-14 as the delayed fluorescence dopant were co-deposited on the electron blocking layer to form an emission layer (EML) having a thickness of 40 nm (wherein, based on 100 wt % of the host, the weights of the phosphorescent dopant and the delayed fluorescence dopant were 10 wt % and 2 wt %, respectively).

[0426] Compound ET-13 was vacuum deposited on the emission layer to form a hole blocking layer (HBL) having a thickness of 5 nm.

[0427] Compound ET-18 and Compound Liq (in a weight ratio of 5:5) were vacuum deposited on the hole blocking layer to form an electron transport layer having a thickness of 30 nm.

[0428] Subsequently, MgAg (Mg: 50 wt%) was vacuum-deposited on the electron transport layer to form a cathode having a thickness of 11 nm, and CP1 was deposited on the cathode to form a A capping layer with a thickness of is formed, thereby completing the manufacture of the light-emitting device.

[0429] Example 1 to Example 25

[0430] See also Figure 1 and Table 1, a light-emitting device was manufactured in substantially the same manner as in Comparative Example 1, except that regions a to e were doped with energy-level connecting compounds (eg, Compound C-06 and Compound C-12) at respective doping ratios.

[0431] See also Figure 1, point A is a point at 5% depth of the hole transport layer from the contact surface between the hole transport layer and the electron blocking layer, and point C is a point at 15% depth of the emission layer from the contact surface between the electron blocking layer and the emission layer.

[0432] Comparative Example 2

[0433] A light-emitting device was manufactured in substantially the same manner as in Comparative Example 1, except that a layer composed of an energy level connecting compound (eg, Compound C-06) between the hole transport layer and the electron blocking layer was formed to a thickness of 5 nm.

[0434] Comparative Example 3

[0435] A light-emitting device was manufactured in substantially the same manner as in Comparative Example 1, except that a layer composed of an energy level connecting compound (Compound C-12) between the electron blocking layer and the emission layer was formed to a thickness of 5 nm.

[0436] In order to evaluate the properties of the light emitting devices of Comparative Examples 1 to 3 and Examples 1 to 25, 1,000 cd / m 2 The efficiency (luminous efficiency), lifespan (operating lifespan) and capacitance at a brightness of the embodiment 1 to the embodiment 25 and the comparative examples 2 and 3 were calculated as the percentages of the efficiency, lifespan and capacitance of the comparative example 1, and the results are shown in Table 1.

[0437] The efficiency of the light emitting device was measured by using Polaronix V7000 manufactured by McScience, the lifetime of the same light emitting device was measured by using ES480 manufactured by ENC, and the capacitance of the same light emitting device was measured by using Alpha-A high performance frequency analyzer manufactured by Novocontrol Technologies.

[0438] Table 1

[0439]

[0440]

[0441]

[0442] Referring to Table 1, it can be seen that the light emitting device of the embodiment has an excellent lifespan compared with the light emitting device of the comparative example.

[0443] The HOMO energy level values, dipole moment values, etc. of the compounds in Examples and Comparative Examples are shown in Table 2 (calculation conditions: density functional theory (DFT) calculation using B3LYP hybrid functional and 6-311G** basis set).

[0444] Table 2

[0445] C-06 C-12 HT3 HT-13 ET-13 P20 D-14 HOMO level (eV) -5.11 -5.20 -5.05 -5.29 -5.91 -5.16 -5.15 Dipole moment (D) 2.316 3.032 - - - - -

[0446]

[0447] According to one or more embodiments, a light emitting device may exhibit improved lifetime compared to other light emitting devices in the prior art.

[0448] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects in each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope defined by the appended claims and their equivalents.

Claims

1. A light emitting device, comprising: a first electrode; a second electrode facing the first electrode; as well as an interlayer between the first electrode and the second electrode and including an emission layer, wherein the interlayer comprises a hole transport layer and an electron blocking layer, The electron blocking layer is between the hole transport layer and the emission layer, and the electron blocking layer is in direct contact with the hole transport layer and the emission layer, The interlayer includes an energy level connecting compound, The energy level connecting compound is doped in any region from point A to the emission layer, wherein point A is a point at a depth greater than 0% and up to 20% of the thickness of the hole transport layer from a contact surface between the hole transport layer and the electron blocking layer, The electron blocking layer is correspondingly doped with the energy level connecting compound, and The energy level connects the highest occupied molecular orbital energy level HOMO of the compound C and the highest occupied molecular orbital energy level value HOMO of the hole transport layer HTL Satisfy condition (1): Condition (1) HOMO C -HOMO HTL ≤0.15eV。 2. The light emitting device according to claim 1, wherein: The first electrode is an anode, The second electrode is a cathode, and The interlayer further includes an electron transport region between the second electrode and the emission layer and including a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

3. The light emitting device according to claim 1, wherein: The first electrode is an anode, The second electrode is a cathode, and The interlayer further includes a hole injection layer, an emission auxiliary layer, or any combination thereof between the first electrode and the emission layer.

4. The light emitting device according to claim 1, wherein: The emission layer includes a host and a dopant, and The host includes a hole transport host compound and an electron transport host compound.

5. The light-emitting device according to claim 4, wherein the HOMO C Greater than the highest occupied molecular orbital energy level HOMO of the electron blocking layer EBL , the highest occupied molecular orbital energy level HOMO of the hole transport host compound p and the highest occupied molecular orbital energy level HOMO of the electron transport host compound n .

6. The light emitting device according to claim 1, wherein: The emission layer includes a host and a dopant, and The dopant comprises a phosphorescent dopant compound, and The HOMO C and the highest occupied molecular orbital energy level HOMO of the phosphorescent dopant compound ph Satisfy condition (2): Condition (2) |HOMO C -HOMO ph |≤0.10eV。 7. The light emitting device according to claim 1, wherein: The emission layer includes a host and a dopant, The dopant comprises a fluorescent dopant compound, The HOMO C and the highest occupied molecular orbital energy level HOMO of the fluorescent dopant compound F Satisfy condition (3): Condition (3) |HOMO C -HOMO F |≤0.10eV。 The light-emitting device according to claim 1 , wherein the energy-level linking compound has a dipole moment of 2 Debye or more.

9. The light emitting device according to claim 1, wherein: The energy level connecting compound is doped in: in the electron blocking layer; and In a region from a contact surface between the electron blocking layer and the emission layer to point C, wherein point C is a point at a depth greater than 0% and up to 20% of the thickness of the emission layer from the contact surface between the electron blocking layer and the emission layer.

10. The light emitting device according to claim 1, wherein: The energy level connecting compound is doped in: In a region from point A to point C, wherein point A is a point at a depth greater than 0% and up to 20% of the thickness of the hole transport layer from the contact surface between the hole transport layer and the electron blocking layer, and Point C is a point at which the depth from the contact surface between the electron blocking layer and the emission layer is greater than 0% and up to 20% of the thickness of the emission layer.

11. The light emitting device according to claim 1, wherein: The energy level connecting compound is doped in: in the electron blocking layer; and in the emission layer.

12. The light emitting device according to claim 1, wherein: The energy level connecting compound is doped in: In a region from point A to the contact surface between the hole transport layer and the electron blocking layer, wherein point A is a point at a depth greater than 0% and up to 20% of the thickness of the hole transport layer from the contact surface between the hole transport layer and the electron blocking layer; and in the electron blocking layer.

13. The light emitting device according to claim 1, wherein: The energy level connecting compound is doped in: In a region from point A to the emission layer, wherein point A is a point at a depth greater than 0% and up to 20% of the thickness of the hole transport layer from the contact surface between the hole transport layer and the electron blocking layer.

14. The light-emitting device according to claim 1, wherein the hole transport layer comprises one selected from the following compounds:

15. The light-emitting device according to claim 1, wherein the electron blocking layer comprises one selected from the following compounds:

16. The light-emitting device according to claim 1, wherein the energy level connecting compound comprises one selected from the following compounds:

17. The light emitting device according to claim 4, wherein: The interlayer further comprises a hole blocking layer and an electron transport layer, and The electron transport host compound, the compound included in the hole blocking layer, and the compound included in the electron transport layer each independently include one selected from the following compounds:

18. The light emitting device according to claim 6, wherein the phosphorescent dopant compound comprises one or any combination selected from the following compounds:

19. The light emitting device according to claim 7, wherein the fluorescent dopant compound comprises at least one selected from the following compounds:

20. An electronic device comprising the light emitting device according to any one of claims 1 to 19.

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