Method and system for rapidly extracting contact resistance of GaN HEMT device based on flicker noise

Abstract

The invention provides a method and system for rapidly extracting contact resistance of a GaN HEMT device based on flicker noise, and relates to the technical field of power semiconductor device test characterization. The method comprises the steps of firstly measuring an IdVg transfer curve of the GaN device, then utilizing a 1 / f noise tester to obtain current noise spectrums and at least eight grid voltage points of the GaN device under different grid voltages in a linear region, and then calculating the current noise spectrums and the at least eight grid voltage points on the basis of different dependency relationships of noise caused by two-dimensional electron gas and noise caused by contact resistance of the GaN HEMT device on the grid voltages. And extracting to obtain the contact resistance of the GaN HEMT device. The method is convenient and fast to operate, process parameters of different devices do not need to be additionally designed and compared, the contact resistance parameters can be extracted only by directly testing the tested device, noise testing belongs to nondestructive testing, performance change of the device cannot be caused, certain universality is achieved, and the method is suitable for popularization and application. The method has important reference significance in application of a GaN HEMT device in a circuit.

Description

Technical Field

[0001] The present invention relates to the technical field of power semiconductor device testing and characterization, and in particular to a method and system for quickly extracting contact resistance of a GaN HEMT device based on flicker noise. Background Art

[0002] In power electronic devices, compared with traditional power devices, GaN devices can achieve higher operating voltage, higher output power density, and lower on-resistance, greatly improving energy conversion efficiency, and making a very important contribution to the concept of energy conservation and low-carbon emission. One of the key factors limiting the performance of GaN HEMT and reliable design in DC / RF circuits is the resistance of the non-gate area, which is usually marked as contact resistance.

[0003] However, the current methods for extracting the contact resistance of GaN devices at home and abroad require accurate process parameters and complex algorithms. For example, according to the Shichman-Hodges model, a concentrated model based on threshold voltage, a group of devices for TLM model calculation is specially designed, and then the contact resistance is calculated by the transmission line model (TLM). In this method, firstly, the Shichman-Hodges model, a concentrated model based on threshold voltage, has a certain complexity in itself, because it needs to accurately describe the physical and electrical characteristics of MOS transistors. Secondly, a group of devices specially designed for TLM model calculation also requires in-depth understanding and precise control of the physical structure, electrical characteristics and process parameters of the device, which requires consideration of multiple factors, such as device size, material, doping concentration, etc., to ensure that the designed device can meet the requirements of TLM model calculation. Finally, calculating the contact resistance by the transmission line model (TLM) is also a relatively complex process. From the above description, it can be seen that the existing methods for extracting the contact resistance of GaN devices are relatively complex. Summary of the invention

[0004] 1. Technical issues to be resolved

[0005] In view of the shortcomings of the prior art, the present invention provides a method and system for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise, which solves the technical problem that the existing method for extracting the contact resistance of a GaN device is complicated.

[0006] (II) Technical solution

[0007] To achieve the above objectives, the present invention is implemented through the following technical solutions:

[0008] In a first aspect, the present invention provides a method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise, characterized by comprising:

[0009] Obtaining a transfer curve Id-Vg of the GaN HEMT device, and obtaining a gate threshold voltage and a current linear change region of the GaN HEMT device from the transfer curve Id-Vg;

[0010] Obtaining 1 / f noise spectra of the GaN HEMT device at several different gate voltages, wherein the several different gate voltages are selected from a current linear change region, and the selected several different gate voltages are all greater than a gate threshold voltage;

[0011] After normalizing the 1 / f noise spectrum, a number of normalized 1 / f noise spectra are obtained, and the number of normalized 1 / f noise spectra are fitted respectively to obtain fitting curves of the number of 1 / f noise spectra;

[0012] A number of normalized noise spectrum densities at a certain frequency are extracted from the fitting curves of a number of 1 / f noise spectra, and the relationship between the normalized noise spectrum density and the current is obtained. The resistance value of the contact resistance is obtained from the relationship between the normalized noise spectrum density and the current.

[0013] Preferably, obtaining the 1 / f noise spectrum of the GaN HEMT device at several different gate voltages includes:

[0014] Eight gate voltages are uniformly selected in the current linear change region of the GaN HEMT device to test the flicker noise, and eight 1 / f noise spectra are obtained.

[0015] Preferably, the fitting of the plurality of normalized 1 / f noise spectra respectively comprises: fitting the plurality of normalized 1 / f noise spectra respectively using a Hooge noise model.

[0016] Preferably, extracting a number of normalized noise spectral densities at a certain frequency from the fitting curves of a number of 1 / f noise spectra includes:

[0017] The normalized noise spectral density at several 10 Hz or 100 Hz is extracted from the fitting curves of several 1 / f noise spectra.

[0018] Preferably, the process of deriving the resistance value of the contact resistance from the normalized relationship between the noise spectrum density and the current includes:

[0019] Noise spectrum caused by two-dimensional electron gas in GaN HEMT devices according to the mobility fluctuation noise model It can be described by the following formula:

[0020]

[0021] Where α is the Hooge coefficient; Cox is the gate insulation capacitance per unit area, which is determined by the device insulation material; V gs is the gate voltage; V t is the device threshold voltage; q is the charge; f is the test frequency;

[0022] The noise caused by the contact resistance of GaN HEMT devices can be described by the formula:

[0023]

[0024] Where B is the contact resistance noise coefficient;

[0025] Since the total resistance R tot The channel resistance R and contact resistance R formed by 2DEG contact They are connected in series, so the noise spectrum caused by the two has the following relationship:

[0026]

[0027] Combining formulas (1-3), we can get the following formula (4):

[0028]

[0029] Among them, R tot is the total resistance of the device, given by V d / I d Can get, represents the normalized noise spectral density, S ID represents the channel current noise spectral density of GaN HEMT device, I DS represents the channel current of GaN HEMT device, A represents the mobility noise fitting parameter, f represents the frequency, and γ represents the frequency factor; The relationship between the current and the contact resistance R of the device can be obtained by fitting formula (4). contact .

[0030] In a second aspect, the present invention provides a system for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise, comprising:

[0031] A data acquisition module is used to acquire a transfer curve Id-Vg of a GaN HEMT device, and obtain a gate threshold voltage and a current linear change region of the GaN HEMT device from the transfer curve Id-Vg;

[0032] A 1 / f noise spectrum acquisition module is used to acquire 1 / f noise spectra of a GaN HEMT device under a plurality of different gate voltages, wherein the plurality of different gate voltages are selected from a current linear change region, and the plurality of different gate voltages selected are all greater than a gate threshold voltage;

[0033] A curve fitting module is used for obtaining a number of normalized 1 / f noise spectra after normalization processing on the 1 / f noise spectrum, and fitting the number of normalized 1 / f noise spectra respectively to obtain a number of fitting curves of the 1 / f noise spectra;

[0034] The resistance value extraction module is used to extract a number of normalized noise spectrum densities at a certain frequency from the fitting curves of a number of 1 / f noise spectra, obtain the relationship between the normalized noise spectrum density and the current, and obtain the resistance value of the contact resistance from the relationship between the normalized noise spectrum density and the current.

[0035] Preferably, obtaining the 1 / f noise spectrum of the GaN HEMT device at several different gate voltages includes:

[0036] Eight gate voltages are uniformly selected in the current linear change region of the GaN HEMT device to test the flicker noise, and eight 1 / f noise spectra are obtained.

[0037] Preferably, extracting a number of normalized noise spectral densities at a certain frequency from the fitting curves of a number of 1 / f noise spectra includes:

[0038] The normalized noise spectral density at several 10 Hz or 100 Hz is extracted from the fitting curves of several 1 / f noise spectra.

[0039] In a third aspect, the present invention provides a storage medium storing a computer program for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise, wherein the computer program enables a computer to execute the method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise as described above.

[0040] In a fourth aspect, an electronic device includes:

[0041] one or more processors;

[0042] Memory; and

[0043] One or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, the programs including a method for executing the method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise as described above.

[0044] (III) Beneficial effects

[0045] The present invention provides a method and system for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise. Compared with the prior art, the present invention has the following beneficial effects:

[0046] The operation of the present invention is convenient and quick, and does not require additional design to compare the process parameters of different devices. The contact resistance parameters can be extracted by directly testing the test device. The noise test is a non-destructive test and will not cause performance changes in the device. The present invention has certain versatility and is of great reference significance for the application of GaN HEMT devices in circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0048] Figure 1 A block diagram of a method for quickly extracting contact resistance of a GaN HEMT device based on flicker noise according to an embodiment of the present invention;

[0049] Figure 2 A schematic diagram of the Id-Vg curve of the GaN HEMT device (i.e., a schematic diagram of the change of the scan gate voltage from off to on when Vd=0.1V is fixed);

[0050] Figure 3 Schematic diagram of noise power spectrum density under different gate voltages;

[0051] Figure 4 Schematic diagram of the fitting curves of different 1 / f noise spectra;

[0052] Figure 5 Schematic diagram of the noise spectrum data after fitting at different gate voltages at 100 Hz and the function image of the device current at the corresponding gate voltage. DETAILED DESCRIPTION

[0053] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention are clearly and completely described. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0054] The embodiments of the present application provide a method and system for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise, which solves the technical problem that the existing method for extracting the contact resistance of a GaN device is complicated, and realizes simple, fast and effective extraction of the contact resistance of a GaN device.

[0055] The technical solution in the embodiment of the present application is to solve the above technical problems, and the overall idea is as follows:

[0056] The existing method for extracting the contact resistance of GaN devices requires accurate process parameters and complex algorithms. In order to overcome the defects of the prior art, the embodiment of the present invention provides a method for quickly extracting the contact resistance of GaN HEMT devices based on flicker noise. The contact resistance of GaN HEMT devices is extracted by flicker noise. This method does not require accurate process parameters and complex algorithms, and is of great significance for simply, quickly and effectively extracting the contact resistance of GaN devices.

[0057] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0058] The embodiment of the present invention provides a method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise (1 / f noise), such as Figure 1 As shown, the method includes:

[0059] S1, obtaining a transfer curve Id-Vg of the GaN HEMT device, and obtaining a gate threshold voltage and a current linear change region of the GaN HEMT device from the transfer curve Id-Vg;

[0060] S2, obtaining 1 / f noise spectra of the GaN HEMT device at several different gate voltages, wherein the several different gate voltages are selected from the current linear change region, and the selected several different gate voltages are all greater than the gate threshold voltage;

[0061] S3, performing normalization processing on the 1 / f noise spectrum to obtain a number of normalized 1 / f noise spectra, and performing fitting on the several normalized 1 / f noise spectra to obtain a number of fitting curves of the 1 / f noise spectra;

[0062] S4. Extracting a number of normalized noise spectrum densities at a certain frequency from the fitting curves of a number of 1 / f noise spectra, obtaining the relationship between the normalized noise spectrum density and the current, and obtaining the resistance value of the contact resistance from the relationship between the normalized noise spectrum density and the current.

[0063] The operation of the embodiment of the present invention is convenient and quick, does not require device process parameters, has certain versatility, and has important reference significance for the application of GaN HEMT devices in circuits.

[0064] The following is a detailed description of each step:

[0065] In step S1, the transfer curve Id-Vg of the GaN HEMT device is obtained, and the gate threshold voltage and current linear change region of the GaN HEMT device are obtained from the transfer curve Id-Vg. Specifically, it includes:

[0066] The transfer curve Id-Vg of the GaN HEMT device measured by the measuring device is imported into the computer, and the computer reads the gate threshold voltage and current linear change area of ​​the GaN HEMT device from the transfer curve. Figure 2 shown.

[0067] In step S2, a 1 / f noise spectrum of the GaN HEMT device under several different gate voltages is obtained, wherein the several different gate voltages are selected from a current linear change region, and the selected several different gate voltages are all greater than a gate threshold voltage;

[0068] Select several different gate voltages in the current linear change region, and it is required that the selected several different gate voltages are all greater than the gate threshold voltage. In the embodiment of the present invention, 8 suitable gate voltages are preferably selected. In order to facilitate calculation, 8 suitable voltage points are generally uniformly selected in the current linear change region to test flicker noise. For the convenience of description, the embodiment of the present invention is described below by taking 8 different gate voltages as an example. In the embodiment of the present invention, the selected 8 suitable voltage points are as follows: Figure 2 The locations of the 8 five-pointed stars in the picture.

[0069] Use a 1 / f noise tester to measure the noise power spectrum density at different gate voltages, such as Figure 3 As shown in FIG. 1 , the 1 / f noise spectra of the GaN HEMT device at these 8 different gate voltages are measured and input into the computer. Figure 3 It can be seen that the normalized flicker noise has a clear dependence on the test gate voltage.

[0070] In step S3, after normalizing the 1 / f noise spectrum, a number of normalized 1 / f noise spectra are obtained, and the number of normalized 1 / f noise spectra are fitted respectively to obtain a number of fitting curves of the 1 / f noise spectra. Specifically, the method includes:

[0071] After normalizing the 1 / f noise spectrum, 8 normalized 1 / f noise spectra are obtained. Fitting, we get 8 fitting curves of 1 / f noise spectrum. Among them, represents the normalized noise spectral density, S ID represents the channel current noise spectral density of GaN HEMT device, I DS represents the channel current of GaN HEMT device, A represents the mobility noise fitting parameter, f represents the frequency, and γ represents the frequency factor.

[0072] In the embodiment of the present invention, the Hooge noise model is used to fit several normalized 1 / f noise spectra. The fitted curves are as follows: Figure 4 shown.

[0073] In step S4, a number of normalized noise spectrum densities at a certain frequency are extracted from the fitting curves of a number of 1 / f noise spectra, and the relationship between the normalized noise spectrum density and the current is obtained, and the resistance value of the contact resistance is obtained from the relationship between the normalized noise spectrum density and the current. Specifically, it includes:

[0074] From the fitting curves of the eight 1 / f noise spectra, the normalized noise spectral density at eight certain frequencies (10 Hz or 100 Hz is generally selected for the convenience of subsequent calculation and extraction accuracy) is extracted to obtain With the change of current, The resistance value of the contact resistance is obtained from the relationship between the change in resistance and the current.

[0075] from The derivation process of the resistance value of the contact resistance obtained from the relationship between the change of current and the change of the contact resistance is as follows:

[0076] According to the mobility fluctuation noise model, the noise spectrum caused by the two-dimensional electron gas (2DEG) of GaN HEMT devices can be described by the following formula:

[0077]

[0078] Where α is the Hooge coefficient; C ox is the gate insulation capacitance per unit area, which is determined by the device insulation material; V gs is the gate voltage; V t is the device threshold voltage; q is the charge; f is the test frequency;

[0079] The noise caused by the contact resistance of GaN HEMT devices can be described by the formula:

[0080]

[0081] Where B is the contact resistance noise factor.

[0082] Since the total resistance R tot The channel resistance R and contact resistance R formed by 2DEGcontact They are connected in series, so the noise spectrum caused by the two has the following relationship:

[0083]

[0084] Combining formulas (1-3), we can get the following formula (4):

[0085]

[0086] Among them, R tot is the total resistance of the device, given by V d / I d can be obtained through The relationship between the current and the contact resistance R of the device can be obtained by fitting formula (4). contact .like Figure 5 As shown, by extracting the noise spectrum data after fitting at different gate voltages at 100 Hz and drawing a function graph with the device current at the corresponding gate voltage, and then fitting the function graph through formula (4), the contact resistance value can be obtained.

[0087] An embodiment of the present invention provides a system for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise, comprising:

[0088] A data acquisition module is used to acquire a transfer curve Id-Vg of a GaN HEMT device, and obtain a gate threshold voltage and a current linear change region of the GaN HEMT device from the transfer curve Id-Vg;

[0089] A 1 / f noise spectrum acquisition module is used to acquire 1 / f noise spectra of a GaN HEMT device under a plurality of different gate voltages, wherein the plurality of different gate voltages are selected from a current linear change region, and the plurality of different gate voltages selected are all greater than a gate threshold voltage;

[0090] A curve fitting module is used for obtaining a number of normalized 1 / f noise spectra after normalization processing on the 1 / f noise spectrum, and fitting the number of normalized 1 / f noise spectra respectively to obtain a number of fitting curves of the 1 / f noise spectra;

[0091] The resistance value extraction module is used to extract a number of normalized noise spectrum densities at a certain frequency from the fitting curves of a number of 1 / f noise spectra, obtain the relationship between the normalized noise spectrum density and the current, and obtain the resistance value of the contact resistance from the relationship between the normalized noise spectrum density and the current.

[0092] It can be understood that the system for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise provided in an embodiment of the present invention corresponds to the method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise described above, and the explanations, examples, beneficial effects, etc. of the relevant contents can refer to the corresponding contents in the method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise, which will not be repeated here.

[0093] An embodiment of the present invention further provides a computer-readable storage medium storing a computer program for rapidly extracting the contact resistance of a GaN HEMT device based on flicker noise, wherein the computer program enables a computer to execute the method for rapidly extracting the contact resistance of a GaN HEMT device based on flicker noise as described above.

[0094] An embodiment of the present invention also provides an electronic device, comprising: one or more processors; a memory; and one or more programs, wherein the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the programs include a method for executing the method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise as described above.

[0095] In summary, compared with the prior art, the present invention has the following beneficial effects:

[0096] The operation of the embodiment of the present invention is convenient and fast, and does not require additional design to compare the process parameters of different devices. The contact resistance parameters can be extracted by directly testing the test device. In addition, the noise test is a non-destructive test and will not cause the performance of the device to change. The embodiment of the present invention has certain versatility and is of great reference significance for the application of GaN HEMT devices in circuits.

[0097] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0098] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise, characterized in that: include: Obtaining a transfer curve Id-Vg of the GaN HEMT device, and obtaining a gate threshold voltage and a current linear change region of the GaN HEMT device from the transfer curve Id-Vg; Obtaining 1 / f noise spectra of the GaN HEMT device at several different gate voltages, wherein the several different gate voltages are selected from a current linear change region, and the selected several different gate voltages are all greater than a gate threshold voltage; After normalizing the 1 / f noise spectrum, a number of normalized 1 / f noise spectra are obtained, and the number of normalized 1 / f noise spectra are fitted respectively to obtain fitting curves of the number of 1 / f noise spectra; A number of normalized noise spectrum densities at a certain frequency are extracted from the fitting curves of a number of 1 / f noise spectra, and the relationship between the normalized noise spectrum density and the current is obtained. The resistance value of the contact resistance is obtained from the relationship between the normalized noise spectrum density and the current.

2. The method for rapidly extracting the contact resistance of a GaN HEMT device based on flicker noise according to claim 1, characterized in that: The obtaining of the 1 / f noise spectrum of the GaN HEMT device at several different gate voltages comprises: Eight gate voltages are uniformly selected in the current linear change region of the GaN HEMT device to test the flicker noise, and eight 1 / f noise spectra are obtained.

3. The method for rapidly extracting the contact resistance of a GaN HEMT device based on flicker noise according to claim 1, characterized in that: The fitting of the plurality of normalized 1 / f noise spectra respectively comprises: fitting the plurality of normalized 1 / f noise spectra respectively using a Hooge noise model.

4. The method for rapidly extracting the contact resistance of a GaN HEMT device based on flicker noise according to claim 1, characterized in that: The step of extracting a number of normalized noise spectrum densities at a certain frequency from the fitting curves of a number of 1 / f noise spectra includes: The normalized noise spectral density at several 10 Hz or 100 Hz is extracted from the fitting curves of several 1 / f noise spectra.

5. The method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise according to any one of claims 1 to 4, characterized in that: The derivation process of obtaining the resistance value of the contact resistance from the normalized noise spectral density versus current includes: Noise spectrum caused by two-dimensional electron gas in GaN HEMT devices according to the mobility fluctuation noise model It can be described by the following formula: Where α is the Hooge coefficient; C ox is the gate insulation capacitance per unit area, which is determined by the device insulation material; V gs is the gate voltage; V t is the device threshold voltage; q is the charge; f is the test frequency; The noise caused by the contact resistance of GaN HEMT devices can be described by the formula: Where B is the contact resistance noise coefficient; Since the total resistance R tot The channel resistance R and contact resistance R formed by 2DEG contact They are connected in series, so the noise spectrum caused by the two has the following relationship: Combining formulas (1-3), we can get the following formula (4): Among them, R tot is the total resistance of the device, given by V d / I d Can get, represents the normalized noise spectral density, S ID represents the channel current noise spectral density of GaN HEMT device, I DS represents the channel current of GaN HEMT device, A represents the mobility noise fitting parameter, f represents the frequency, and γ represents the frequency factor; The relationship between the current and the contact resistance R of the device can be obtained by fitting formula (4). contact .

6. A system for rapidly extracting contact resistance of GaN HEMT devices based on flicker noise, characterized in that: include: A data acquisition module is used to acquire the transfer curve Id-Vg of the GaN HEMT device, and obtain the gate threshold voltage and current linear change area of ​​the GaN HEMT device from the transfer curve Id-Vg; A 1 / f noise spectrum acquisition module is used to acquire 1 / f noise spectra of a GaN HEMT device under a plurality of different gate voltages, wherein the plurality of different gate voltages are selected from a current linear change region, and the plurality of different gate voltages selected are all greater than a gate threshold voltage; A curve fitting module is used for obtaining a number of normalized 1 / f noise spectra after normalization processing on the 1 / f noise spectrum, and fitting the number of normalized 1 / f noise spectra respectively to obtain a number of fitting curves of the 1 / f noise spectra; The resistance value extraction module is used to extract a number of normalized noise spectrum densities at a certain frequency from the fitting curves of a number of 1 / f noise spectra, obtain the relationship between the normalized noise spectrum density and the current, and obtain the resistance value of the contact resistance from the relationship between the normalized noise spectrum density and the current.

7. The system for rapidly extracting contact resistance of GaN HEMT devices based on flicker noise according to claim 6, characterized in that: The obtaining of the 1 / f noise spectrum of the GaN HEMT device at several different gate voltages comprises: Eight gate voltages are uniformly selected in the current linear change region of the GaN HEMT device to test the flicker noise, and eight 1 / f noise spectra are obtained.

8. The system for rapidly extracting contact resistance of GaN HEMT devices based on flicker noise according to claim 7, characterized in that: The step of extracting a number of normalized noise spectrum densities at a certain frequency from the fitting curves of a number of 1 / f noise spectra includes: The normalized noise spectral density at several 10 Hz or 100 Hz is extracted from the fitting curves of several 1 / f noise spectra.

9. A storage medium, characterized in that: The computer program for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise is stored therein, wherein the computer program enables a computer to execute the method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise as claimed in any one of claims 1 to 5.

10. An electronic device, characterized in that: include: one or more processors; Memory; as well as One or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, the programs including a method for executing the method for quickly extracting the contact resistance of a GaN HEMT device based on flicker noise according to any one of claims 1 to 5.

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