Sensor device

Abstract

A sensor device is provided. The sensor device includes: a sensor layer including a first sensor and a second sensor, the second sensor and the first sensor forming a capacitance; and a sensor driver configured to transmit a driving signal to the first sensor and receive a sensing signal from the second sensor during a touch sensing period. The sensor driver is further configured to transmit the first driving signal to at least some of the first sensors and transmit the second driving signal to at least some of the second sensors during an object sensing period different from the touch sensing period. During the object sensing period, a first driving signal applied to a first sensor positioned at an edge of the sensor layer differs from a first driving signal applied to a first sensor positioned at a central portion of the sensor layer in at least one of a voltage level, a frequency, a phase, and a code.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0151712 filed in the Korean Intellectual Property Office on November 6, 2023, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] Aspects of embodiments of the present disclosure are directed to a sensor device and a driving method of the sensor device. Background Art

[0003] As information technology has developed, the importance of display devices as a connection medium between users and information has become increasingly prominent. Therefore, the use of display devices such as liquid crystal display devices and organic light emitting display devices has been increasing.

[0004] The display device may include a sensor device. The sensor device may sense a user's touch or an object corresponding to an image of the display device and use it as an input signal.

[0005] The sensor device may include a plurality of sensors. When the object is positioned in the center area of ​​the sensor device, the object may send signals to and receive signals from a sufficient number of sensors. Therefore, transmission and reception of signals between the object and the sensor device may be smooth.

[0006] The above information disclosed in this Background section is for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not constitute the prior art. Summary of the invention

[0007] When the object is located in the edge area or outside the sensor device, the object may send signals to and receive signals from a relatively small number of sensors. Therefore, transmission and reception of signals between the object and the sensor device may not be smooth.

[0008] Embodiments of the present disclosure may relate to a sensor device which may smoothly transmit and receive a signal even if an object is positioned at an edge or outside the sensor device, and a driving method thereof.

[0009] According to one or more embodiments of the present disclosure, a sensor device includes: a sensor layer including a first sensor and a second sensor, the second sensor forming a capacitance with the first sensor; and a sensor driver configured to send a drive signal to the first sensor during a touch sensing period and receive a sensing signal from the second sensor. The sensor driver is also configured to send a first drive signal to at least some of the first sensors during an object sensing period different from the touch sensing period, and send a second drive signal to at least some of the second sensors. During the object sensing period, a first drive signal applied to a first sensor positioned at an edge of the sensor layer is different from a first drive signal applied to a first sensor positioned at a central portion of the sensor layer in at least one of a voltage level, a frequency, a phase, and a code.

[0010] In some embodiments, during an object sensing period, a second drive signal applied to a second sensor positioned at an edge of the sensor layer may differ from a second drive signal applied to a second sensor positioned at a center portion of the sensor layer in at least one of voltage level, frequency, phase, and code.

[0011] In some embodiments, during an object sensing period, a first drive signal applied to a first sensor positioned at an edge of the sensor layer may have a higher signal-to-noise ratio (SNR) than a first drive signal applied to a first sensor positioned at a central portion of the sensor layer.

[0012] In some embodiments, during the object sensing period, a voltage level of a first drive signal applied to a first sensor positioned at an edge of the sensor layer may be different from a voltage level of a first drive signal applied to a first sensor positioned at a central portion of the sensor layer.

[0013] In some embodiments, during the object sensing period, a voltage level of a first driving signal applied to a first sensor positioned at an edge of the sensor layer may be greater than a voltage level of a first driving signal applied to a first sensor positioned at a central portion of the sensor layer.

[0014] In some embodiments, during the object sensing period, a phase of a first drive signal applied to a first sensor positioned at an edge of the sensor layer may be different from a phase of a first drive signal applied to a first sensor positioned at a central portion of the sensor layer.

[0015] In some embodiments, during the object sensing period, a phase difference between first drive signals applied to first sensors positioned at an edge of the sensor layer may be smaller than a phase difference between first drive signals applied to first sensors positioned at a central portion of the sensor layer.

[0016] In some embodiments, during an object sensing period, a phase of a first drive signal applied to a first sensor positioned at an edge of the sensor layer may be set to cause more constructive interference than a phase of a first drive signal applied to a first sensor positioned at a center portion of the sensor layer.

[0017] In some embodiments, during the object sensing period, a frequency of a first drive signal applied to a first sensor positioned at an edge of the sensor layer may be different from a frequency of a first drive signal applied to a first sensor positioned at a central portion of the sensor layer.

[0018] In some embodiments, during an object sensing period, the frequency of a first drive signal applied to a first sensor positioned at an edge of the sensor layer may be set to cause more constructive interference than the frequency of a first drive signal applied to a first sensor positioned at a center portion of the sensor layer.

[0019] In some embodiments, during the object sensing period, a code of a first driving signal applied to a first sensor positioned at an edge of the sensor layer may be different from a code of a first driving signal applied to a first sensor positioned at a central portion of the sensor layer.

[0020] In some embodiments, during an object sensing period, a code of a first drive signal applied to a first sensor positioned at an edge of the sensor layer may cause more constructive interference than a code of a first drive signal applied to a first sensor positioned at a center portion of the sensor layer.

[0021] According to one or more embodiments of the present disclosure, a method for driving a sensor device includes a sensor layer, the sensor layer includes a first sensor and a second sensor forming a capacitor with the first sensor, the method includes applying a first drive signal to at least some of the first sensors, the first drive signal applied to the first sensor positioned at the edge of the sensor layer is different from the first drive signal applied to the first sensor positioned at the center of the sensor layer in at least one of voltage, frequency, phase and code. The method also includes applying a second drive signal to at least some of the second sensors, the second drive signal applied to the second sensor positioned at the edge of the sensor layer is different from the second drive signal applied to the second sensor positioned at the center of the sensor layer in at least one of voltage level, frequency, phase and code.

[0022] In some embodiments, a first drive signal applied to a first sensor positioned at an edge of the sensor layer may have a higher signal-to-noise ratio (SNR) than a first drive signal applied to a first sensor positioned at a central portion of the sensor layer.

[0023] In some embodiments, a voltage level of a first driving signal applied to a first sensor positioned at an edge of the sensor layer may be greater than a voltage level of a first driving signal applied to a first sensor positioned at a central portion of the sensor layer.

[0024] In some embodiments, a phase difference between first drive signals applied to first sensors positioned at edges of the sensor layer may be smaller than a phase difference between first drive signals applied to first sensors positioned at a central portion of the sensor layer.

[0025] In some embodiments, a phase of a first drive signal applied to a first sensor positioned at an edge of the sensor layer may be set to cause more constructive interference than a phase of a first drive signal applied to a first sensor positioned at a central portion of the sensor layer.

[0026] In some embodiments, the frequency of the first drive signal applied to the first sensor positioned at the edge of the sensor layer can be set to cause more constructive interference than the frequency of the first drive signal applied to the first sensor positioned at the center portion of the sensor layer.

[0027] In some embodiments, a code of a first drive signal applied to a first sensor positioned at an edge of the sensor layer may cause more constructive interference than a code of a first drive signal applied to a first sensor positioned at a center portion of the sensor layer.

[0028] In some embodiments, at least one of the voltage, frequency, phase, and code of the first drive signal applied to the first sensor positioned at the edge of the sensor layer can cause more constructive interference than at least one of the voltage, frequency, phase, and code of the first drive signal applied to the first sensor positioned at the center portion of the sensor layer.

[0029] According to one or more embodiments of the present disclosure, a sensor layer includes: a first sensor and a second sensor intersecting the first sensor; and a sensor driver configured to send a first drive signal to the first sensor during a first sensing period and receive a sensing signal from the second sensor. The sensor driver is configured to send a second drive signal different from the first drive signal to at least two of the first sensors during a second sensing period different from the first sensing period. During the second sensing period, the second drive signal applied to the first sensor positioned at the edge of the sensor layer is different from the second drive signal applied to the first sensor positioned at the center portion of the sensor layer in at least one of a voltage level, a frequency, a phase, and a code.

[0030] In some embodiments, the first drive signal may be a signal for detecting a position of a first object; and the second drive signal may be a signal for detecting a position of a second object different from the first object.

[0031] According to one or more embodiments of the present disclosure, a display device and a driving method thereof may smoothly transmit and receive signals even if an object is positioned at an edge or outside a sensor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and other aspects and features of the present disclosure will be more clearly understood from the following detailed description of illustrative, non-limiting embodiments with reference to the accompanying drawings.

[0033] Figure 1 is a perspective view illustrating a display device according to one or more embodiments of the present disclosure.

[0034] Figures 2 to 4 A display unit and a display driver according to one or more embodiments of the present disclosure are shown.

[0035] Figure 5 A sensor device according to an embodiment of the present disclosure is shown.

[0036] Figure 6 A timing diagram showing a driving method of a sensor device according to an embodiment of the present disclosure is shown.

[0037] Figure 7 The relationship between a display device and an object according to an embodiment of the present disclosure is shown.

[0038] Figures 8 to 10 A first drive signal and a second drive signal of the sensor device are shown.

[0039] Fig.11 and Fig.12 A relationship between a display device and an object according to one or more embodiments of the present disclosure is shown.

[0040] Fig.13 A situation is shown in which an object is positioned in the edge region of the sensor unit.

[0041] Fig.14 and Fig.15 A first driving signal, a second driving signal, and voltage levels of the first driving signal and the second driving signal according to one or more embodiments of the present disclosure are shown.

[0042] Figures 16 to 18 is a diagram for explaining a first driving signal, a second driving signal, and phases of the first driving signal and the second driving signal according to one or more embodiments of the present disclosure.

[0043] Fig.19 and Fig. 20 A first drive signal and a second drive signal and frequencies of the first drive signal and the second drive signal according to one or more embodiments of the present disclosure are shown.

[0044] Fig.21 and Fig. 22 A first drive signal and a second drive signal and codes of the first drive signal and the second drive signal according to one or more embodiments of the present disclosure are shown.

[0045] Figure 23 to Figure 29 An example configuration of a display device according to one or more embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0046] Hereinafter, embodiments will be described in more detail with reference to the accompanying drawings, in which the same reference numerals always refer to the same elements. However, the present disclosure may be implemented in various forms and should not be construed as being limited to the embodiments shown herein. On the contrary, these embodiments are provided as examples so that the disclosure will be thorough and complete, and will fully convey the aspects and features of the present disclosure to those skilled in the art. Therefore, processes, elements and techniques that are not necessary for those of ordinary skill in the art to fully understand the aspects and features of the present disclosure may not be described. Throughout the drawings and written descriptions, unless otherwise stated, the same reference numerals indicate the same elements, and therefore, their redundant descriptions may not be repeated.

[0047] When some embodiments may be implemented differently, the specific process order may be different from the described order. For example, two processes described in succession may be performed simultaneously or substantially simultaneously, or may be performed in the reverse order of the described order.

[0048] In the accompanying drawings, for clarity, the relative size, thickness and ratio of elements, layers and regions can be exaggerated and / or simplified. For ease of explanation, spatial relative terms such as "below ... ", "below ... ", "lower part", "below ... ", "above ... " and "upper part" can be used here to describe the relationship between an element or feature and another element (multiple elements) or feature (multiple features) as shown in the accompanying drawings. It will be understood that, in addition to the orientation depicted in the accompanying drawings, spatial relative terms are intended to cover different orientations of the device in use or operation. For example, if the device in the accompanying drawings is turned over, the element described as "below" or "below" or "below" of other elements or features will then be oriented to "above" other elements or features. Therefore, the example terms "below ... " and "below ... " can cover both upper and lower orientations. The device can be oriented in addition (for example, rotated 90 degrees or in other orientations), and the spatial relative descriptors used here should be interpreted accordingly.

[0049] In the drawings, the x-axis, y-axis, and z-axis are not limited to the three axes of the rectangular coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular or substantially perpendicular to each other, or can represent different directions that are not perpendicular to each other.

[0050] It will be understood that, although the terms "first", "second", "third", etc., may be used herein to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the spirit and scope of the present disclosure, the first element, first component, first region, first layer or first part described below may be referred to as the second element, second component, second region, second layer or second part.

[0051] It will be understood that when an element or layer is referred to as being "on," "connected to," or "bound to" another element or layer, it can be directly on, directly connected to, or directly bound to the other element or layer, or there may be one or more intervening elements or layers. Similarly, when a layer, region, or element is referred to as being "electrically connected to" another layer, region, or element, it can be directly electrically connected to the other layer, region, or element and / or can be indirectly electrically connected via one or more intervening layers, regions, or elements therebetween. Furthermore, it will be understood that when an element or layer is referred to as being "between" two elements or layers, it can be the only element or layer between the two elements or layers, or there may also be one or more intervening elements or layers.

[0052] The terms used here are for the purpose of describing a particular embodiment, and are not intended to limit the present disclosure. As used herein, unless the context clearly states otherwise, the singular forms "one" and "one (kind / person)" are also intended to include plural forms. It will also be understood that when the terms "include", "comprise", "have", "have" and variations thereof are used in this specification, the features, wholes, steps, operations, elements and / or components stated are described, but one or more other features, wholes, steps, operations, elements, components and / or their groups are not excluded from being present or added. As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items. For example, the expression "A and / or B" means A, B or A and B. When an expression such as "... at least one (kind / person)" is after a column of elements, the entire column of elements is modified, without modifying the single element of the column. For example, the expressions "at least one of a, b, and c" and "at least one selected from the group consisting of a, b, and c" indicate only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0053] As used herein, the terms "substantially," "about," and similar terms are used as terms of approximation rather than terms of degree, and are intended to account for the inherent deviations in measurements or calculations that one of ordinary skill in the art would recognize. In addition, when describing embodiments of the present disclosure, the use of "may" refers to "one or more embodiments of the present disclosure." As used herein, the term "use" and variations thereof may be considered synonymous with the term "utilizing" and variations thereof, respectively.

[0054] The electronic device or electrical device and / or any other related device or component according to the embodiments of the present disclosure described herein can be implemented using any suitable hardware, firmware (e.g., a dedicated integrated circuit), software, or a combination of software, firmware, and hardware. For example, the various components of these devices can be formed on an integrated circuit (IC, integrated circuit) chip, or on different IC chips. In addition, the various components of these devices can be implemented on a flexible printed circuit film, a tape carrier package (TCP), a printed circuit board (PCB), or formed on a substrate. In addition, the various components of these devices can be processes or threads that execute computer program instructions and interact with other system components for performing the various functions described herein, running on one or more processors in one or more computing devices. Computer program instructions are stored in a memory, which can be implemented in a computing device using a standard memory device (such as a random access memory (RAM) as an example). Computer program instructions can also be stored in other non-temporary computer-readable media (such as a CD-ROM or a flash drive, etc. as an example). In addition, those skilled in the art should recognize that the functionality of various computing devices may be combined or integrated into a single computing device, or the functionality of a particular computing device may be distributed across one or more other computing devices without departing from the spirit and scope of the example embodiments of the present disclosure.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It will also be understood that terms (such as those defined in common dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and / or this specification, and should not be interpreted in an idealized or overly formal sense, unless explicitly defined as such herein. Figure 1 is a diagram for explaining a display device according to some embodiments of the present disclosure.

[0056] Reference Figure 1 The display device 1 according to some embodiments of the present disclosure may include a panel 10 and a driving circuit part 20 for driving the panel 10 .

[0057] For example, the panel 10 may include a display unit (e.g., a display or display layer) 110 for displaying an image and a sensor unit (e.g., a sensor or a sensor layer) 120 for sensing touch, pressure, fingerprint and / or hovering. For example, the panel 10 may include pixels PX and sensors SC arranged to overlap at least some of the pixels PX. In some embodiments, the sensor SC may include a first sensor TX and a second sensor RX. In other embodiments (e.g., a self-capacitive method), the sensor SC may be configured as a type of sensor (e.g., one sensor) without distinction between the first sensor and the second sensor. The driving circuit section 20 may include a display driver 210 for driving the display unit 110 and a sensor driver 220 for driving the sensor unit 120. For example, the pixel PX may display an image in units of a display frame period. For example, the sensor SC may sense a user input in units of a sensing frame period. The sensing frame period and the display frame period may be independent of each other and may be different from each other. The sensing frame period and the display frame period may be synchronized or may not be synchronized. For example, the sensing frame period and the display frame period may be the same or substantially the same as each other.

[0058] In some embodiments, the display unit 110 and the sensor unit 120 may be manufactured separately from each other. The display unit 110 and the sensor unit 120 may be arranged and / or combined with each other so that at least one area of ​​the display unit 110 and at least one area of ​​the sensor unit 120 overlap each other. As another example, in some embodiments, the display unit 110 and the sensor unit 120 may be manufactured integrally with each other. For example, the sensor unit 120 may be directly formed on at least one substrate (e.g., an upper substrate and / or a lower substrate of a display panel or a thin film encapsulation layer) forming the display unit 110, or formed on other insulating layers or various suitable functional films (e.g., an optical layer or a passivation layer).

[0059] exist Figure 1 , the sensor unit 120 is shown as being disposed on the front surface (e.g., the upper surface on which an image is displayed) of the display unit 110, but the position of the sensor unit 120 is not limited thereto. For example, in other embodiments, the sensor unit 120 may be disposed on the rear surface or a corresponding surface of the display unit 110. In some embodiments, the sensor unit 120 may be disposed on at least one edge region of the display unit 110.

[0060] The display unit 110 may include a display substrate 111 and a plurality of pixels PX formed on the display substrate 111. The pixels PX may be disposed in a display area DA of the display substrate 111. The display area DA may be a plane defined by a first direction DR1 and a second direction DR2 perpendicular or substantially perpendicular to the first direction DR1. A display direction of the display area DA may be a third direction DR3 perpendicular or substantially perpendicular to the first direction DR1 and the second direction DR2. In some embodiments, the display area DA may be flat or substantially flat, or may be curved.

[0061] The display substrate 111 may include a display area DA in which an image is displayed and a non-display area NDA outside the display area DA. In some embodiments, the display area DA may be disposed in a central area of ​​the display unit 110, and the non-display area NDA may be disposed in an edge area of ​​the display unit 110 to surround the display area DA (e.g., around the periphery of the display area DA).

[0062] The display substrate 111 may be a rigid substrate or a flexible substrate, but its material or physical properties are not particularly limited thereto. For example, the display substrate 111 may be a rigid substrate including (e.g., made of) glass or tempered glass or a flexible substrate formed of (e.g., made of) a film including (e.g., made of) a plastic or metal material.

[0063] The scan line SL and the data line DL may be provided in the display area DA. The pixel PX may be connected to the scan line SL and the data line DL. The pixel PX may be selected by a scan signal having an on level supplied from the scan line SL, may receive a data signal from the data line DL, and may emit light having a brightness corresponding to the data signal. Thus, an image corresponding to the data signal is displayed in the display area DA. However, the structure and driving method of the pixel PX are not particularly limited thereto. For example, as will be understood by those of ordinary skill in the art, the pixel PX may be implemented to have various suitable structures and driving methods.

[0064] Various wirings connected to the pixels PX and / or the internal circuit parts of the display area DA may be provided in the non-display area NDA. For example, a plurality of wirings for supplying various power and control signals to the display area DA may be provided in the non-display area NDA, and a scan driver and the like may be further provided in the non-display area NDA.

[0065] As used in the present disclosure, the type of the display unit 110 is not particularly limited. For example, the display unit 110 may be implemented as a self-luminous display panel such as an organic light-emitting display panel. However, when the display unit 110 is implemented as a self-luminous type, each pixel PX is not limited to the case where only organic light-emitting elements are included. For example, the light-emitting element of each pixel PX may include an organic light-emitting diode, an inorganic light-emitting diode and / or a quantum dot / well light-emitting diode. Each pixel PX may be provided with a plurality of light-emitting elements. In this case, the plurality of light-emitting elements may be connected in series, in parallel, or in series / in parallel. As another example, the display unit 110 may be implemented as a non-luminous display panel such as a liquid crystal display panel. When the display unit 110 is implemented in a non-luminous type, the display device 1 may additionally include a light source such as a backlight unit (e.g., a backlight).

[0066] The sensor unit 120 may include a sensor substrate 121 and a plurality of sensors SC formed on the sensor substrate 121. The sensors SC may be disposed in a sensing area SA on the sensor substrate 121.

[0067] The sensor substrate 121 may include a sensing area SA capable of sensing a touch input, etc., and a peripheral area NSA outside the sensing area SA. In some embodiments, the sensing area SA may be arranged to overlap at least one area of ​​the display area DA. For example, the sensing area SA may be an area corresponding to the display area DA (e.g., an area overlapping the display area DA), and the peripheral area NSA may be an area corresponding to the non-display area NDA (e.g., an area overlapping the non-display area NDA). In this case, when a user input (touch input or object input, etc.) is provided on the display area DA, the user input may be detected by the sensor unit 120. The sensing area SA may be an area larger than the display area DA. For example, a portion of the sensing area SA may cover the display area DA, and another portion of the sensing area SA may cover an area outside the display area DA. According to the structure of the sensor unit 120, the sensing range of the outer portion of the sensing area SA may be smaller than the sensing range of the central portion of the sensing area SA. Therefore, in order to make the sensing sensitivity of the outer portion of the sensing area SA the same or substantially the same as the sensing sensitivity of the central portion of the sensing area SA, at least a portion of the sensing area SA may be larger than the display area DA.

[0068] The sensor substrate 121 may be a rigid substrate or a flexible substrate, and may be configured to have at least one insulating film. When the sensor substrate 121 is configured to have one insulating film, the first sensor electrode may be disposed under the insulating film, and the second sensor electrode may be disposed above the insulating film. In some embodiments, the sensor substrate 121 may be configured with two insulating films. In this case, the first sensor electrode may be disposed under the first insulating film, and the second sensor electrode may be disposed between the first insulating film and the second insulating film. The third sensor electrode may be disposed on the second insulating film. In this way, a sensor SC for sensing user input, etc. may be disposed in the sensing area SA. In this case, the first sensor electrode may be disposed under the first insulating film, and the second sensor electrode may be disposed between the first insulating film and the second insulating film. The third sensor electrode may be disposed between the second insulating film and the third insulating film, and the fourth sensor electrode may be disposed on the third insulating film. In some embodiments, the first sensor electrode, the second sensor electrode, the third sensor electrode, and the fourth sensor electrode may be electrodes for detecting one type of sensing (e.g., one type of user input). In some embodiments, the first sensor electrode and the second sensor electrode may be electrodes for detecting a first type of sensing, and the third sensor electrode and the fourth sensor electrode may be electrodes for detecting a second type of sensing different from the first type of sensing. For example, the first type of sensing may be a sensing method for detecting a user's touch. The second type of sensing may be a sensing method for detecting an object such as an active pen. In this case, the third sensor electrode and the fourth sensor electrode performing the second type of sensing may be charging electrodes or sensing electrodes for electromagnetic generation.

[0069] In addition, the sensor substrate 121 may be a transparent or translucent transmissive substrate, but is not limited thereto. The material and physical properties of the sensor substrate 121 are not particularly limited. For example, the sensor substrate 121 may be a rigid substrate including glass or tempered glass (e.g., made of glass or tempered glass) or a flexible substrate formed of a thin film including a plastic or metal material (e.g., made of a plastic or metal material). In addition, in some embodiments, at least one substrate (e.g., a display substrate 111, an encapsulation substrate, and / or a thin film encapsulation layer) forming the display unit 110 or at least one layer of an insulating film or a functional film provided on the inner surface and / or outer surface of the display unit 110 may be used as the sensor substrate 121.

[0070] The sensing area SA is set as an area that can respond to user input (eg, an effective area of ​​a sensor). Thus, a sensor SC for sensing user input may be disposed in the sensing area SA. In some embodiments, the sensor SC may include a first sensor TX and a second sensor RX.

[0071] For example, the first sensors TX may extend in the first direction DR1. The first sensors TX may be spaced apart from each other in the second direction DR2, and may be arranged in parallel with each other. The second direction DR2 may be different from the first direction DR1. For example, the second direction DR2 may be a direction orthogonal to the first direction DR1. In some embodiments, the extension direction and arrangement direction of the first sensors TX may follow other suitable configurations. Each of the first sensors TX may have a structure in which a first unit having a relatively large area and a first bridge having a relatively narrow area are connected to each other. Figure 1 In the embodiment, each first unit is shown as a diamond shape, but may have various suitable shapes, such as a circle, a quadrilateral, a triangle, and / or a grid form. For example, the first bridge may be integrally formed at the same or substantially the same layer as the first unit (e.g., in or on the same layer). In some embodiments, the first bridge may be formed in a layer different from the layer of the first unit to electrically connect adjacent first units to each other.

[0072] For example, each second sensor RX may extend in the second direction DR2. The second sensors RX may be spaced apart from each other in the first direction DR1 and may be arranged in parallel with each other. In some embodiments, the extension direction and arrangement direction of the second sensors RX may follow other suitable configurations. Each second sensor RX may have a structure in which a second unit having a relatively large area and a second bridge having a relatively narrow area are connected to each other. Figure 1 In the embodiment, each second unit is shown as a diamond shape, but may have various suitable shapes, such as a circle, a quadrilateral, a triangle, and / or a grid form. For example, the second bridge may be integrally formed at the same layer as the layer of the second unit (e.g., in or on the same layer). In some embodiments, the second bridge may be formed in a layer different from the layer of the second unit to electrically connect adjacent second units to each other.

[0073] For example, the first unit of the first sensor TX and the second unit of the second sensor RX may be formed at the same conductive layer (e.g., in or on the same conductive layer). In this case, the first bridge of the first sensor TX and the second bridge of the second sensor RX may be formed at different conductive layers (e.g., in or on different conductive layers) with an insulating layer therebetween. For example, when the first bridge of the first sensor TX and the first unit and the second unit are formed at the same layer (e.g., in or on the same layer), the second bridge of the second sensor RX may be formed in a layer different from that of the first bridge, the first unit and the second unit with an insulating layer therebetween. When the second bridge of the second sensor RX and the first unit and the second unit are formed at the same layer (e.g., in or on the same layer), the first bridge of the first sensor TX may be formed in a layer different from that of the second bridge, the first unit and the second unit with an insulating layer therebetween.

[0074] As another example, the first unit of the first sensor TX and the second unit of the second sensor RX may be formed at different conductive layers (e.g., in or on different conductive layers) with an insulating layer therebetween. In this case, the first unit and the first bridge of the first sensor TX may be formed at the same conductive layer (e.g., in or on the same conductive layer). In addition, the second unit and the second bridge of the second sensor RX may be formed at the same conductive layer (e.g., in or on the same conductive layer).

[0075] In some embodiments, each of the first sensors TX and each of the second sensors RX may have electrical conductivity by including at least one of a metal material, a transparent conductive material, and various other conductive materials. For example, the first sensor TX and the second sensor RX may include at least one of various suitable metal materials such as gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), platinum (Pt), and / or suitable alloys thereof. In this case, the first sensor TX and the second sensor RX may be constructed in a grid form. In addition, the first sensor TX and the second sensor RX may include materials such as silver nanowires (AgNW), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), antimony zinc oxide (AZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), tin oxide (SnO 2 ), carbon nanotubes and / or graphene. In addition, the first sensor TX and the second sensor RX may have conductivity by including at least one of various other suitable conductive materials. In addition, each of the first sensor TX and the second sensor RX may include a single layer or a multilayer (e.g., be made of a single layer or a multilayer), but the cross-sectional structure thereof is not particularly limited thereto.

[0076] Sensor lines for electrically connecting the sensors TX and RX to the sensor driver 220 and the like may be provided in the peripheral area NSA of the sensor unit 120 .

[0077] The driving circuit part 20 may include a display driver 210 for driving the display unit 110, a sensor driver 220 for driving the sensor unit 120, and a processor 230. The processor 230 may control the software and hardware of the display device 1. For example, the processor 230 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a neural processing unit (NPU). The processor 230 may control the display driver 210 and the sensor driver 220 by providing instructions, timing signals, data, and the like.

[0078] In some embodiments, the display driver 210 and the sensor driver 220 may be constructed by different integrated chips from each other. In some embodiments, at least a portion of the display driver 210 and the sensor driver 220 may be integrated together in one integrated chip (IC).

[0079] The display driver 210 is electrically connected to the display unit 110 to drive the pixels PX. For example, the display driver 210 may include a data driver and a timing controller, and a scan driver may be separately installed in the non-display area NDA of the display unit 110. In some embodiments, the display driver 210 may include all or at least some of the data driver, the timing controller, and the scan driver.

[0080] The sensor driver 220 is electrically connected to the sensor unit 120 to drive the sensor unit 120. The sensor driver 220 may include a sensor transmitter and a sensor receiver. In some embodiments, the sensor transmitter and the sensor receiver may be integrated together in a single IC, but the present disclosure is not limited thereto.

[0081] Figures 2 to 4 A display unit and a display driver according to one or more embodiments of the present disclosure are shown.

[0082] Reference Figure 2 , the display driver 210 may include a timing controller 11 and a data driver 12. The display unit 110 may include a scan driver 13, a pixel portion 14, and an emission driver 15. However, as described above, whether each functional portion will be integrated into one IC or a plurality of ICs or will be mounted on the display substrate 111 may be variously configured according to an embodiment of the display device 1.

[0083] The timing controller 11 can be operated from the processor 230 (see Figure 1 ) receives the grayscale (eg, grayscale value or grayscale level) and timing signals of each frame period. The timing signals may include a vertical synchronization signal, a horizontal synchronization signal, a data enable signal, and the like.

[0084] Each cycle of the vertical synchronization signal may correspond to a corresponding display frame cycle. Each cycle of the horizontal synchronization signal may correspond to a corresponding horizontal period. In response to a pulse of an enable level of the data enable signal, a grayscale may be supplied in units of horizontal lines in each horizontal period. A horizontal line may represent pixels connected to the same or substantially the same scan line and light emitting line (e.g., a pixel row).

[0085] The timing controller 11 can render the grayscale to correspond to the specification of the display device 1. For example, the processor 230 (see Figure 1 ) can provide red grayscale, green grayscale, and blue grayscale for each unit point. For example, when the pixel unit 14 has an RGB stripe structure, the pixel can correspond to each grayscale one by one. In this case, rendering of grayscale may not be necessary. However, for example, when the pixel unit 14 has an RGBG structure (e.g., PENTILE ® STRUCTURE, PENTILE ® is an officially registered trademark of Samsung Display Co., Ltd.), because adjacent unit points share pixels, pixels may not correspond to each grayscale one by one. In this case, rendering of the grayscale may be required. The rendered or unrendered grayscale may be provided to the data driver 12. In addition, the timing controller 11 may provide a data control signal to the data driver 12. In addition, the timing controller 11 may provide a scan control signal to the scan driver 13, and may provide a light emitting control signal to the emission driver 15.

[0086] The data driver 12 may generate data voltages (eg, data signals) to be provided to data lines (eg, DL1 , DL2 , DL3 , DL4 , . . . , DLn) by using grayscale and data control signals received from the timing controller 11 , where n may be an integer greater than zero.

[0087] The scan driver 13 can generate a scan signal to be provided to the scan lines (e.g., SL0, SL1, SL2, ..., SLm) by using a scan control signal (e.g., a clock signal and / or a scan start signal, etc.) received from the timing controller 11, where m is an integer greater than zero. The scan driver 13 can sequentially supply a scan signal having an on-level pulse to the scan lines SL0 to SLm. The scan driver 13 may include a scan stage constructed in the form of a shift register. The scan driver 13 can generate a scan signal by sequentially transmitting a scan start signal of an on-level as a pulse type to a next scan stage according to the control of a clock signal.

[0088] The emission driver 15 may generate a light emission signal to be provided to the light emission lines (e.g., EL1, EL2, EL3, ..., ELo) by using a light emission control signal (e.g., a clock signal and / or a light emission stop signal, etc.) received from the timing controller 11, where o is an integer greater than zero. The emission driver 15 may sequentially supply a light emission signal having a cut-off level pulse to the light emission lines EL1 to ELo. The emission driver 15 may include a light emission stage constructed in the form of a shift register. The emission driver 15 may generate a light emission signal by sequentially transmitting a light emission stop signal in the form of a cut-off level pulse to the next light emission stage according to the control of the clock signal. The pixel portion 14 includes pixels. Each pixel PXij may be connected to a corresponding data line, a scan line, and a light emission line. The pixel may include a pixel emitting a first color light, a pixel emitting a second color light, and a pixel emitting a third color light. The first color, the second color, and the third color may be different colors. For example, the first color may be one of red, green, and blue, the second color may be one of red, green, and blue except the first color, and the third color may be the remaining color of red, green, and blue except the first and second colors. In addition, magenta, cyan, and yellow may be used instead of red, green, and blue as the first to third colors.

[0089] For example, a pixel group may include three pixels. The three pixels may be a red pixel, a green pixel, and a blue pixel, respectively. As another example, a pixel group may include four pixels. For example, the four pixels may be a red pixel, a green pixel (e.g., a first green pixel), a green pixel (e.g., a second green pixel), and a blue pixel, respectively. The four pixels may be arranged in two rows and two columns to form a quadrilateral shape. The four pixels may be arranged in three columns to form a rhombus shape, wherein one pixel is in the first column, two pixels are arranged in two rows in the second column, and one pixel is in the third column. In this case, a pixel group refers to a basic unit in which the arrangement shape of the same or substantially the same pixels is repeated along the columns or rows of the pixel portion 14.

[0090] Figure 3 is a diagram illustrating pixels according to some embodiments of the present disclosure.

[0091] Reference Figure 3 , the pixel PXij may include transistors T1 , T2 , T3 , T4 , T5 , T6 , and T7 , a storage capacitor Cst, and a light emitting element LD.

[0092] In the following, a circuit consisting of a P-type transistor will be described as an example. However, by changing the polarity of the voltage applied to the gate terminal, a person of ordinary skill in the art can design a circuit consisting of an N-type transistor. Similarly, a person of ordinary skill in the art will be able to design a circuit consisting of a combination of a P-type transistor and an N-type transistor. A P-type transistor refers to a transistor in which the amount of current increases when the voltage difference between the gate electrode and the source electrode increases in the negative direction. An N-type transistor refers to a transistor in which the amount of current increases when the voltage difference between the gate electrode and the source electrode increases in the positive direction. The transistor can have various types such as a thin film transistor (TFT), a field effect transistor (FET), and a bipolar junction transistor (BJT).

[0093] In the first transistor T1, a gate electrode may be connected to a first node N1, a first electrode may be connected to a second node N2, and a second electrode may be connected to a third node N3. The first transistor T1 may be referred to as a driving transistor.

[0094] In the second transistor T2, a gate electrode may be connected to the scan line SLi1, a first electrode may be connected to the data line DLj, and a second electrode may be connected to the second node N2. The second transistor T2 may be referred to as a scan transistor.

[0095] In the third transistor T3, a gate electrode may be connected to the scan line SLi2, a first electrode may be connected to the first node N1, and a second electrode may be connected to the third node N3. The third transistor T3 may be referred to as a diode-connected transistor.

[0096] In the fourth transistor T4, a gate electrode may be connected to the scan line SLi3, a first electrode may be connected to the first node N1, and a second electrode may be connected to the initialization line INTL. The fourth transistor T4 may be referred to as a gate initialization transistor.

[0097] In the fifth transistor T5, the gate electrode may be connected to the i-th light emitting line ELi, the first electrode may be connected to the first power line ELVDDL, and the second electrode may be connected to the second node N2. The fifth transistor T5 may be referred to as a light emitting transistor. In some embodiments, the gate electrode of the fifth transistor T5 may be connected to a light emitting line different from the light emitting line connected to the gate electrode of the sixth transistor T6.

[0098] In the sixth transistor T6, the gate electrode may be connected to the i-th light emitting line ELi, the first electrode may be connected to the third node N3, and the second electrode may be connected to the anode of the light emitting element LD. The sixth transistor T6 may be referred to as a light emitting transistor. In some embodiments, the gate electrode of the sixth transistor T6 may be connected to a light emitting line different from the light emitting line connected to the gate electrode of the fifth transistor T5.

[0099] In the seventh transistor T7, the gate electrode may be connected to the scan line SLi4, the first electrode may be connected to the initialization line INTL, and the second electrode may be connected to the anode of the light emitting element LD. The seventh transistor T7 may be referred to as an anode initialization transistor. In some embodiments, the initialization line INTL to which the first electrode of the seventh transistor T7 is connected is a line different from the initialization line INTL to which the second electrode of the fourth transistor T4 is connected, and the seventh transistor T7 and the fourth transistor T4 may receive different initialization voltages.

[0100] A first electrode of the storage capacitor Cst may be connected to the first power line ELVDDL, and a second electrode of the storage capacitor Cst may be connected to the first node N1.

[0101] The anode of the light emitting element LD can be connected to the second electrode of the sixth transistor T6, and the cathode of the light emitting element LD can be connected to the second power line ELVSSL. The light emitting element LD can be a light emitting diode. The light emitting element LD can include an organic light emitting diode, an inorganic light emitting diode and / or a quantum dot / well light emitting diode. The light emitting element LD can emit light of one of the first color, the second color and the third color. In addition, in some embodiments, only one light emitting element LD is provided in each pixel PXij, but in some embodiments, a plurality of light emitting elements LD can be provided in each pixel PXij. In this case, the plurality of light emitting elements LD can be connected in series, in parallel, or in series / parallel.

[0102] A first power supply voltage may be applied to the first power line ELVDDL, a second power supply voltage may be applied to the second power line ELVSSL, and an initialization voltage may be applied to the initialization line INTL. For example, the first power supply voltage may be greater than the second power supply voltage. For example, the initialization voltage may be substantially equal to or greater than the second power supply voltage. For example, the initialization voltage may correspond to a minimum data voltage among the data voltages that may be provided. In another example, the initialization voltage may be less than the data voltage that may be provided.

[0103] Figure 4 It is used to explain Figure 3 FIG. 1 is a diagram of an exemplary driving method for a pixel of FIG.

[0104] Hereinafter, for better understanding and convenience of description, it is assumed that the scan lines SLi1, SLi2, and SLi4 are the i-th scan line SLi, and the scan line SLi3 is the i-1th scan line SL(i-1). However, according to embodiments, the scan lines SLi1, SLi2, SLi3, and SLi4 may have various connection relationships. For example, the scan line SLi4 may be the i-1th scan line or the i+1th scan line.

[0105] First, an emission signal having a cut-off level (logic high level) is applied to the i-th emission line ELi, a data voltage DATA(i-1)j for the i-1-th pixel is applied to the data line DLj, and a scan signal having a turn-on level (logic low level) is applied to the scan line SLi3. The high / low logic level may vary depending on whether the transistor is P-type or N-type.

[0106] In this case, since the scan signal having the off level is applied to the scan lines SLi1 and SLi2 , the second transistor T2 is in a turned-off state, and the data voltage DATA(i−1)j of the i−1th pixel is not input to the pixel PXij.

[0107] In this case, since the fourth transistor T4 is in the on state, the first node N1 is connected to the initialization line INTL, so that the voltage of the first node N1 is initialized. Since the light emitting signal having the off level is applied to the light emitting line ELi, the transistors T5 and T6 are in the off state, and unnecessary light is prevented from being emitted from the light emitting element LD according to the initialization voltage application process.

[0108] Next, the data voltage DATAij for the i-th pixel PXij is applied to the data line DLj, and the scan signal having the on level is applied to the scan lines SLi1 and SLi2. Therefore, the transistors T2, T1, and T3 are turned on, so that the data line DLj and the first node N1 are electrically connected. Therefore, the compensation voltage obtained by subtracting the threshold voltage of the first transistor T1 from the data voltage DATAij is applied to the second electrode (i.e., the first node N1) of the storage capacitor Cst, and the storage capacitor Cst maintains a voltage corresponding to the difference between the first power supply voltage and the compensation voltage. This period may be referred to as a threshold voltage compensation period or a data writing period.

[0109] Furthermore, when the scan line SLi4 is the i-th scan line, the seventh transistor T7 is turned on, so the anode of the light emitting element LD is connected to the initialization line INTL, and the light emitting element LD is initialized with a charge amount corresponding to the voltage difference between the initialization voltage and the second power supply voltage.

[0110] Thereafter, when a light emission signal having a turn-on level is applied to the i-th light emission line ELi, transistors T5 and T6 may be turned on, thereby forming a driving current path connecting the first power line ELVDDL, the fifth transistor T5, the first transistor T1, the sixth transistor T6, the light emitting element LD and the second power line ELVSSL.

[0111] The amount of driving current flowing through the first electrode and the second electrode of the first transistor T1 is adjusted according to the voltage maintained in the storage capacitor Cst. The light emitting element LD emits light with brightness corresponding to the amount of driving current. The light emitting element LD emits light until a light emitting signal with a cutoff level is applied to the light emitting line ELi.

[0112] When the light emitting signal has an on-level, the pixel receiving the corresponding light emitting signal may be in a display state. Therefore, the period in which the light emitting signal has an on-level may be referred to as a light emitting period EP (or a light emitting permitted period). In addition, when the light emitting signal has an off-level, the pixel receiving the corresponding light emitting signal may be in a non-display state. Therefore, the period in which the light emitting signal has an off-level may be referred to as a non-light emitting period NEP (or a light emitting non-permitted period).

[0113] Figure 4 The non-light emitting period NEP described in is used to prevent the pixel PXij from emitting light with undesired brightness during the initialization period and the data writing period.

[0114] While keeping the data written in the pixel PXij (for example, one frame period), one or more non-emission periods NEP may be additionally set. This can appropriately express low grayscales or smoothly blur the motion of an image by reducing the emission period EP of the pixel PXij.

[0115] Figure 5 is a diagram for explaining a sensor device according to some embodiments of the present disclosure.

[0116] Reference Figure 5 , the sensor device SSD according to some embodiments of the present disclosure may include a sensor unit 120 and a sensor driver 220. The sensor device SSD may be included in the display device 1.

[0117] The sensor unit 120 may include a first sensor (e.g., TX1, TX2, TX3, ..., TX(q-1), TXq) and a second sensor (e.g., RX1, RX2, ..., RX(p-2), RX(p-1), RXp). Each of p and q may be an integer greater than 0. The first sensors TX1 to TXq may extend in the first direction DR1 and may be spaced apart from each other in the second direction DR2 to be arranged in parallel with each other. The second sensors RX1 to RXp may extend in the second direction DR2 and may be spaced apart from each other in the first direction DR1 to be arranged in parallel with each other. The second sensors RX1 to RXp may intersect with the first sensors TX1 to TXq. The second sensors RX1 to RXp may form mutual capacitance with the first sensors TX1 to TXq. The sensor driver 220 may detect a change in capacitance to determine whether a user's touch is input.

[0118] The sensor driver 220 may supply a driving signal to the first sensors TX1 to TXq during a touch sensing period. The sensor driver 220 may be connected to the first sensors TX1 to TXq through first sensor lines (eg, TXL1, TXL2, TXL3, . . . , TXL(q-1), TXLq).

[0119] The sensor driver 220 may receive sensing signals from the second sensors RX1 to RXp during the touch sensing period. The sensor driver 220 may be connected to the second sensors RX1 to RXp through second sensor lines (eg, RXL1, RXL2, ..., RXL(p-2), RXL(p-1), RXLp).

[0120] Figure 6 is a diagram for explaining a driving method of a sensor device according to some embodiments of the present disclosure.

[0121] Reference Figure 6 , shows driving signals applied to the first sensors (e.g., TX1, TX2, TX3, TX4, TX5, TX6, TX7, TX8, ..., TX(q-3), TX(q-2), TX(q-1), TXq) during the touch sensing period SSF1.

[0122] The sensor driver 220 may apply the drive signal to the first sensors TX1 to TXq in a time-division manner. The timings at which the drive signals are respectively applied to the first sensors TX1 to TXq may not overlap with each other. For example, the sensor driver 220 may apply the drive signal to the first sensors TX1 to TXq sequentially. Each of the drive signals may be a voltage signal alternating between a high level and a low level.

[0123] In another example, the sensor driver 220 may apply a plurality of drive signals to a plurality of first sensors during the same or substantially the same time period. In this case, it can be said that the plurality of drive signals applied during the same or substantially the same time period belong to one drive group. For example, when two drive signals belong to one drive group, the drive signals may be applied to the first sensors TX1 and TX2 in a time-overlapping manner during a first time period. During a second time period after the first time period, the drive signals may be applied to the first sensors TX3 and TX4 in a time-overlapping manner. In some embodiments, three drive signals may belong to one drive group. In some embodiments, four drive signals may belong to one drive group (see Fig.21 and Fig. 22 ).

[0124] The sensor driver 220 may receive a sensing signal through the second sensors RX1 to RXp for each driving signal. When the magnitude of the sensing signal detected by a specific second sensor is different from other sensing signals, it may be determined that a user's touch has occurred at the intersection between the first sensor to which the driving signal is applied and the second sensor to which the sensing signal is detected. For example, when a user's touch occurs, the capacitance between the first sensor and the second sensor at the corresponding point may be reduced, so that the magnitude of the sensing signal received from the second sensor may be reduced.

[0125] Figure 7 is a diagram for explaining a relationship between a display device and an object according to some embodiments of the present disclosure.

[0126] Reference Figure 7 , the object 130 may be positioned on the sensor unit 120. During an object sensing period different from a touch sensing period, the sensor driver 220 may apply a first drive signal to at least some of the first sensors TX1 to TXq and a second drive signal to at least some of the second sensors RX1 to RXp. The uplink signal ULS may include the first drive signal and the second drive signal.

[0127] The object 130 may receive the uplink signal ULS from the sensor unit 120. For example, the receiving electrode of the object 130 may form a capacitance with the adjacent first sensors TX1 to TXq and the adjacent second sensors RX1 to RXp. The closer the sensor is to the object 130, the larger the capacitance formed by the sensor and the receiving electrode of the object 130 may be. For example, the object 130 may receive the first driving signal and the second driving signal whose size is proportional to the size of each capacitance.

[0128] The object 130 may calculate the position of the object 130 by decoding the received uplink signal ULS using an internal computing device based on the sensor unit 120. For example, the internal computing device of the object 130 may obtain the coordinates of the second direction DR2 by decoding the first driving signal, and may obtain the coordinates of the first direction DR1 by decoding the second driving signal.

[0129] The object 130 can provide the calculated position to the processor 230 through wireless communication WLS. The wireless communication WLS can be implemented in various suitable commonly available / used ways such as Bluetooth, Bluetooth Low Energy (BLE), WiFi Direct, and Infrared Data Association (IrDA). Therefore, the display device 1 can know the position of the object 130 and use it as input information.

[0130] The object 130 may be implemented in various forms such as an active pen, a finger, a toy, a chess piece, and / or a card.

[0131] Figures 8 to 10 is a diagram for explaining a first drive signal and a second drive signal of a sensor device.

[0132] Reference Figure 8 , the display device 1 may transmit a beacon signal at the start time point t1a of the object sensing period. The beacon signal is a signal periodically transmitted from the display device 1 and may be a signal notifying the object 130 of the existence of the display device 1. The beacon signal may include information for synchronization with the display device 1, such as information about the display device 1 and a communication protocol.

[0133] During the period from t2a to t3a, the sensor driver 220 may apply the first driving signals (e.g., ULS_TX1 to ULS_TX6, . . . ) to the corresponding first sensors (e.g., TX1 to TX6, . . . ). For example, the sensor driver 220 may apply the first driving signals (e.g., ULS_TX1 to ULS_TX6, . . . ) encoded to correspond to a specific code to the corresponding first sensors (e.g., TX1 to TX6, . . . ) substantially simultaneously.

[0134] Reference Fig. 9 , some examples of first drive signals (e.g., ULS_TX1 to ULS_TX5) are shown. For example, the first drive signal ULS_TX1 applied to the first sensor TX1 may be an analog voltage signal including voltage pulses corresponding to the code [1 -1 1 -1 1 -1 1 -1 1]. The first drive signal ULS_TX2 applied to the first sensor TX2 may be an analog voltage signal including voltage pulses corresponding to the code [-1 -1 1 -1 -1 1 1 -1 -1]. The first drive signal ULS_TX3 applied to the first sensor TX3 may be an analog voltage signal including voltage pulses corresponding to the code [-1 1 -1 1 -1 1 -1 1 -1]. The first drive signal ULS_TX4 applied to the first sensor TX4 may be an analog voltage signal including voltage pulses corresponding to the code [-1 -1 1 1 -1 -1 1 1 -1]. The first driving signal ULS_TX5 applied to the first sensor TX5 may be an analog voltage signal including voltage pulses corresponding to a code [1 1 -1 -1 1 1 -1 -1 1].

[0135] exist Fig. 9In some embodiments, the first drive signal is shown to have a high level voltage when the code is 1 and a low level voltage when the code is -1. However, when the code is 1, the first drive signal may have multiple voltage pulses, and when the code is -1, the first drive signal may have multiple voltage pulses with opposite phases. That is, Fig. 9 It is only an example, and the encoding method of the present disclosure may not be limited.

[0136] Return to reference Figure 8 , during the period from t3a to t4a, the sensor driver 220 may apply the second drive signals (e.g., ULS_RX1 to ULS_RX6, ...) to the corresponding second sensors (e.g., RX1 to RX6, ...). For example, the sensor driver 220 may apply the second drive signals (e.g., ULS_RX1 to ULS_RX6, ...) encoded to correspond to the specific code to the corresponding second sensors (e.g., RX1 to RX6, ...) substantially at the same time. Since the encoding method of the second drive signals (e.g., ULS_RX1 to ULS_RX6, ...) may be similar to the encoding method of the first drive signals (e.g., ULS_TX1 to ULS_TX6, ...), redundant description will be omitted.

[0137] Reference Fig.10 During the period from t2a to t3a, the sensor driver 220 may apply the first drive signal (e.g., ULS_TX1, ULS_TX3, ULS_TX5, ...) to the corresponding first sensor (e.g., TX1, TX3, TX5, ...), and apply the second drive signal (e.g., ULS_RX1, ULS_RX3, ULS_RX5, ...) to the corresponding second sensor (e.g., RX1, RX3, RX5, ...). For example, the sensor driver 220 may apply the first drive signal (e.g., ULS_TX1, ULS_TX3, ULS_TX5, ...) encoded to correspond to a specific code and the second drive signal (e.g., ULS_RX1, ULS_RX3, ULS_RX5, ...) to the first sensor (e.g., TX1, TX3, TX5, ...) and the second sensor (e.g., RX1, RX3, RX5, ...) substantially simultaneously. For example, during a period from t2a to t3a, the sensor driver 220 may apply driving signals to odd-numbered first sensors (eg, TX1, TX3, TX5, . . . ) and odd-numbered second sensors (eg, RX1, RX3, RX5, . . . ).

[0138] During the period from t3a to t4a, the sensor driver 220 may apply a first drive signal (e.g., ULS_TX2, ULS_TX4, ULS_TX6, ...) to the corresponding first sensor (e.g., TX2, TX4, TX6, ...), and apply a second drive signal (e.g., ULS_RX2, ULS_RX4, ULS_RX6, ...) to the corresponding second sensor (e.g., RX2, RX4, RX6, ...). For example, the sensor driver 220 may apply the first drive signal (e.g., ULS_TX2, ULS_TX4, ULS_TX6, ...) and the second drive signal (e.g., ULS_RX2, ULS_RX4, ULS_RX6, ...) encoded to correspond to a specific code to the first sensor (e.g., TX2, TX4, TX6, ...) and the second sensor (e.g., RX2, RX4, RX6, ...) substantially simultaneously. For example, during the period from t3a to t4a, the sensor driver 220 may apply driving signals to even-numbered first sensors (eg, TX2, TX4, TX6, . . . ) and even-numbered second sensors (eg, RX2, RX4, RX6, . . . ).

[0139] In addition, the sensor driver 220 may apply the first driving signal and the second driving signal to the first sensor and the second sensor in various suitable methods and timings.

[0140] Fig.11 and Fig.12 is a diagram for explaining a relationship between a display device and an object according to some embodiments of the present disclosure.

[0141] Reference Fig.11 In some embodiments, the object 130 may calculate its own position and provide the calculated position to the sensor unit 120 through the downlink signal DLS. In this case, at least some of the first sensors TX1 to TXq and the second sensors RX1 to RXp may receive the downlink signal DLS. By decoding the received downlink signal DLS, the display device 1 may confirm the position of the object 130.

[0142] Reference Fig.12 In some embodiments, the object 130 can calculate its own position, and can provide the calculated position and other information (pressure information, slope information, etc.) to the display device 1 through the downlink signal DLS and the wireless communication WLS. The information sent to the display device 1 through each communication method may vary according to each embodiment.

[0143] Fig.13 is a diagram for explaining a case in which an object is positioned in an edge region of a sensor unit.

[0144] When the object 130 is located in an edge region or outside the display device 1, the object 130 may receive the uplink signal ULS from a relatively small number of sensors. Therefore, it may not be easy to determine the position of the object 130.

[0145] Will refer to Figures 14 to 22 Aspects of the present disclosure are presented related to determining the position of an object positioned in or outside an edge region of a display device.

[0146] During the object sensing period, the first driving signals (e.g., ULS_TX1a, ULS_TX2a, ULS_TX8a, ULS_TX9a) applied to the first sensors (e.g., TX1, TX2, TX8, TX9) disposed at the edge of the sensor unit 120 may have a higher signal-to-noise ratio (SNR) than the first driving signals (e.g., ULS_TX3a, ULS_TX4a, ULS_TX5a, ULS_TX6a, ULS_TX7a) applied to the first sensors (e.g., TX3, TX4, TX5, TX6, TX7) disposed at the center of the sensor unit 120. To this end, during the object sensing period, the first driving signal (e.g., ULS_TX1a, ULS_TX2a, ULS_TX8a, ULS_TX9a) applied to the first sensor (e.g., TX1, TX2, TX8, TX9) disposed at the edge of the sensor unit 120 may be different from the first driving signal (e.g., ULS_TX3a, ULS_TX4a, ULS_TX5a, ULS_TX6a, ULS_TX7a) applied to the first sensor (e.g., TX3, TX4, TX5, TX6, TX7) disposed at the center of the sensor unit 120 in at least one of voltage, frequency, phase, and code.

[0147] Therefore, even if the object 130 is located in the edge region or outside of the display device 1 in the second direction DR2, the position of the object 130 in the second direction DR2 may be determined.

[0148] During the object sensing period, second driving signals (e.g., ULS_RX1a, ULS_RX2a, ULS_RX8a, and ULS_RX9a) applied to second sensors (e.g., RX1, RX2, RX8, and RX9) disposed at the edges of the sensor unit 120 may have a higher signal-to-noise ratio (SNR) than second driving signals (e.g., ULS_RX3a, ULS_RX4a, ULS_RX5a, ULS_RX6a, and ULS_RX7a) applied to second sensors (e.g., RX3, RX4, RX5, RX6, and RX7) disposed at the center of the sensor unit 120. To this end, during the object sensing period, the second driving signals (e.g., ULS_RX1a, ULS_RX2a, ULS_RX8a, ULS_RX9a) applied to the second sensors (e.g., RX1, RX2, RX8, RX9) disposed at the edge of the sensor unit 120 may be different from the second driving signals (e.g., ULS_RX3a, ULS_RX4a, ULS_RX5a, ULS_RX6a, ULS_RX7a) applied to the second sensors (e.g., RX3, RX4, RX5, RX6, RX7) disposed at the center of the sensor unit 120 in at least one of voltage, frequency, phase, and code.

[0149] Therefore, even if the object 130 is located in the edge region or outside of the display device 1 in the first direction DR1, the position of the object 130 in the first direction DR1 may be determined.

[0150] Fig.14 and Fig.15 is a diagram for explaining a first driving signal and a second driving signal whose voltage levels are set according to some embodiments of the present disclosure.

[0151] Reference Fig.14 During the object sensing period, the voltage level of the first driving signal (e.g., ULS_TX1a, ULS_TX2a, ULS_TX8a, ULS_TX9a) applied to the first sensors (e.g., TX1, TX2, TX8, TX9) disposed at the edge of the sensor unit 120 may be greater than the voltage level of the first driving signal (e.g., ULS_TX3a, ULS_TX4a, ULS_TX5a, ULS_TX6a, ULS_TX7a) applied to the first sensors (e.g., TX3, TX4, TX5, TX6, TX7) disposed at the center portion of the sensor unit 120. Fig.14In the third direction DR3, the length of the first driving signal (eg, ULS_TX1a to ULS_TX9a) indicates a voltage level. For example, the voltage level of the first driving signal ULS_TX1a applied to the first sensor TX1 may be greater than the voltage level of the first driving signal ULS_TX2a applied to the first sensor TX2.

[0152] In some embodiments, the voltage level of the first drive signal ULS_TX1a applied to the first sensor TX1 may be the same or substantially the same as the voltage level of the first drive signal ULS_TX2a applied to the first sensor TX2. For example, the voltage level of the first drive signal ULS_TX2a may be increased and may be the same or substantially the same as the voltage level of the first drive signal ULS_TX1a. As a result, regardless of the position at the edge of the sensor unit 120, a stronger signal may be obtained, thereby improving the sensing sensitivity at the edge.

[0153] The voltage level of the first drive signal ULS_TX1a applied to the first sensor TX1 may be lower than the voltage level of the first drive signal ULS_TX2a applied to the first sensor TX2. According to the configuration of the sensor unit 120, the first sensor TX1 disposed at the outermost side may contribute to improving the sensing sensitivity at a lower level than the first sensor TX2. In this case, power consumption may be reduced by setting the voltage level of the first drive signal ULS_TX1a to be lower, and the sensing sensitivity may be optimized or improved by setting the voltage level of the first drive signal ULS_TX2a to be higher than the voltage level of the drive signal at the center portion of the sensor unit 120.

[0154] Reference Fig.15 During the object sensing period, the voltage level of the second driving signal (e.g., ULS_RX1a, ULS_RX2a, ULS_RX8a, and ULS_RX9a) applied to the second sensors (e.g., RX1, RX2, RX8, and RX9) disposed at the edge of the sensor unit 120 may be greater than the voltage level of the second driving signal (e.g., ULS_RX3a, ULS_RX4a, ULS_RX5a, ULS_RX6a, and ULS_RX7a) applied to the second sensors (e.g., RX3, RX4, RX5, RX6, and RX7) disposed at the center portion of the sensor unit 120. Fig.15 In the third direction DR3, the length of the second driving signal (eg, ULS_RX1a to ULS_RX9a) indicates a voltage level. For example, the voltage level of the second driving signal ULS_RX1a applied to the second sensor RX1 may be greater than the voltage level of the second driving signal ULS_RX2a applied to the second sensor RX2.

[0155] In some embodiments, the voltage level of the second drive signal ULS_RX1a applied to the second sensor RX1 may be the same or substantially the same as the voltage level of the second drive signal ULS_RX2a applied to the second sensor RX2. For example, the voltage level of the second drive signal ULS_RX2a may be increased and may be the same or substantially the same as the voltage level of the second drive signal ULS_RX1a. As a result, a stronger signal may be obtained regardless of the position at the edge of the sensor unit 120, thereby improving the sensing sensitivity at the edge.

[0156] The voltage level of the second drive signal ULS_RX1a applied to the second sensor RX1 may be lower than the voltage level of the second drive signal ULS_RX2a applied to the second sensor RX2. According to the configuration of the sensor unit 120, the second sensor RX1 disposed at the outermost side may contribute to improving the sensing sensitivity at a level lower than that of the second sensor RX2. In this case, power consumption may be reduced by setting the voltage level of the second drive signal ULS_RX1a to be lower, and the sensing sensitivity may be optimized or improved by setting the voltage level of the second drive signal ULS_RX2a to be higher than the voltage level of the drive signal at the center portion of the sensor unit 120.

[0157] Figures 16 to 18 is a diagram for explaining a first driving signal and a second driving signal whose phases are set according to some embodiments of the present disclosure.

[0158] Reference Fig.16 , shows an example in which the first object OBJ1, the second object OBJ2, or the third object OBJ3 is positioned on the plane of the sensor unit 120. The first object OBJ1 and the third object OBJ3 may be positioned at the edge of the sensor unit 120. The receiving electrode of the first object OBJ1 may form a maximum capacitance with the first sensors TX1 and TX2 and the second sensors RX1 and RX2 among the sensors. The receiving electrode of the third object OBJ3 may form a maximum capacitance with the first sensors TX(q-1) and TXq and the second sensors RX(p-1) and RXp among the sensors. Figures 17 to 22 , p is 9, and q is 9. The second object OBJ2 may be positioned at a central portion of the sensor unit 120 .

[0159] Reference Fig.17During the object sensing period, the phase difference of the first driving signal (e.g., ULS_TX1b, ULS_TX2b, ULS_TX8b, ULS_TX9b) applied to the first sensor (e.g., TX1, TX2, TX(q-1), TXq) disposed at the edge of the sensor unit 120 may be different from the phase difference of the first driving signal (e.g., ULS_TX4b, ULS_TX5b) applied to the first sensor disposed at the center portion of the sensor unit 120.

[0160] For example, during an object sensing period, a phase of a first drive signal (e.g., ULS_TX1b, ULS_TX2b, ULS_TX8b, ULS_TX9b) applied to a first sensor (e.g., TX1, TX2, TX(q-1), TXq) disposed at an edge of the sensor unit 120 may cause more constructive interference than a phase of a first drive signal (e.g., ULS_TX4b, ULS_TX5b) applied to a first sensor disposed at a central portion of the sensor unit 120.

[0161] For example, during the object sensing period, the phase difference between the first driving signals (e.g., ULS_TX1b, ULS_TX2b, ULS_TX8b, ULS_TX9b) applied to the first sensors (e.g., TX1, TX2, TX(q-1), TXq) disposed at the edge of the sensor unit 120 may be smaller than the phase difference between the first driving signals (e.g., ULS_TX4b, ULS_TX5b) applied to the first sensors disposed at the center portion of the sensor unit 120. For example, the phase difference between the first driving signals ULS_TX1b and ULS_TX2b may be about 0 degrees. The phase difference between the first driving signals ULS_TX4b and ULS_TX5b may be about 180 degrees. The phase difference between the first driving signals ULS_TX8b and ULS_TX9b may be about 0 degrees.

[0162] Reference Fig.18 During the object sensing period, the phase difference of the second driving signal (e.g., ULS_RX1b, ULS_RX2b, ULS_RX8b, ULS_RX9b) applied to the second sensor (e.g., RX1, RX2, RX(p-1), RXp) disposed at the edge of the sensor unit 120 may be different from the phase difference of the second driving signal (e.g., ULS_RX4b, ULS_RX5b) applied to the second sensor disposed at the center portion of the sensor unit 120.

[0163] For example, during an object sensing period, a phase of a second drive signal (e.g., ULS_RX1b, ULS_RX2b, ULS_RX8b, ULS_RX9b) applied to a second sensor (e.g., RX1, RX2, RX(p-1), RXp) disposed at an edge of the sensor unit 120 may cause more constructive interference than a phase of a second drive signal (e.g., ULS_RX4b, ULS_RX5b) applied to a second sensor disposed at a center portion of the sensor unit 120.

[0164] For example, during the object sensing period, the phase difference between the second drive signals (e.g., ULS_RX1b, ULS_RX2b, ULS_RX8b, ULS_RX9b) applied to the second sensors (e.g., RX1, RX2, RX(p-1), RXp) disposed at the edge of the sensor unit 120 may be smaller than the phase difference between the second drive signals (e.g., ULS_RX4b, ULS_RX5b) applied to the second sensors disposed at the center of the sensor unit 120. For example, the phase difference between the second drive signals ULS_RX1b and ULS_RX2b may be about 0 degrees. The phase difference between the second drive signals ULS_RX4b and ULS_RX5b may be about 180 degrees. The phase difference between the second drive signals ULS_RX8b and ULS_RX9b may be about 0 degrees.

[0165] Fig.19 and Fig. 20 is a diagram for explaining a first driving signal and a second driving signal whose frequencies are set according to some embodiments of the present disclosure.

[0166] Reference Fig.19 During the object sensing period, a frequency ratio of a first driving signal (e.g., ULS_TX1c, ULS_TX2c, ULS_TX8c, ULS_TX9c) applied to a first sensor (e.g., TX1, TX2, TX(q-1), TXq) disposed at an edge of the sensor unit 120 may be different from a frequency ratio of a first driving signal (e.g., ULS_TX4c, ULS_TX5c) applied to a first sensor disposed at a central portion of the sensor unit 120.

[0167] For example, during an object sensing period, the frequency of the first drive signal (e.g., ULS_TX1c, ULS_TX2c, ULS_TX8c, ULS_TX9c) applied to the first sensors (e.g., TX1, TX2, TX(q-1), TXq) disposed at the edges of the sensor unit 120 may cause more constructive interference than the frequency of the first drive signal (e.g., ULS_TX4c, ULS_TX5c) applied to the first sensors disposed at the center portion of the sensor unit 120.

[0168] For example, the frequency of the first driving signal ULS_TX2c applied to the first sensor TX2 may be approximately twice the frequency of the first driving signal ULS_TX1c applied to the first sensor TX1. In this case, the first driving signal ULS_TX2c and the first driving signal ULS_TX1c may cause partial constructive interference.

[0169] Reference Fig. 20 During the object sensing period, a frequency ratio of a second driving signal (e.g., ULS_RX1c, ULS_RX2c, ULS_RX8c, ULS_RX9c) applied to a second sensor (e.g., RX1, RX2, RX(p-1), RXp) disposed at an edge of the sensor unit 120 may be different from a frequency ratio of a second driving signal (e.g., ULS_RX4c, ULS_RX5c) applied to a second sensor disposed at a central portion of the sensor unit 120.

[0170] For example, during an object sensing period, the frequency of a second drive signal (e.g., ULS_RX1c, ULS_RX2c, ULS_RX8c, ULS_RX9c) applied to a second sensor (e.g., RX1, RX2, RX(p-1), RXp) disposed at an edge of the sensor unit 120 may cause more constructive interference than the frequency of a second drive signal (e.g., ULS_RX4c, ULS_RX5c) applied to a second sensor disposed at a center portion of the sensor unit 120.

[0171] For example, the frequency of the second driving signal ULS_RX2c applied to the second sensor RX2 may be about twice the frequency of the second driving signal ULS_RX1c applied to the second sensor RX1. In this case, the second driving signal ULS_RX2c and the second driving signal ULS_RX1c may cause partial constructive interference.

[0172] Fig.21 and Fig. 22 is a diagram for explaining a first driving signal and a second driving signal whose codes are set according to some embodiments of the present disclosure.

[0173] Reference Fig.21 and Fig. 22 During the object sensing period, the code of the first driving signal (e.g., ULS_TX1d, ULS_TX2d, ULS_TX3d, ULS_TX4d) applied to the first sensor (e.g., TX1, TX2, TX3, ...) disposed at the edge of the sensor unit 120 may be different from the code of the first driving signal (e.g., ULS_TXrd, ULS_TX(r+1)d, ULS_TX(r+2)d, ULS_TX(r+3)d) applied to the first sensor disposed at the center portion of the sensor unit 120.

[0174] For example, during the object sensing period, codes of first drive signals (e.g., ULS_TX1d, ULS_TX2d, ULS_TX3d, ULS_TX4d) applied to first sensors (e.g., TX1, TX2, TX3, ...) disposed at edges of the sensor unit 120 may cause more constructive interference than codes of first drive signals (e.g., ULS_TXrd, ULS_TX(r+1)d, ULS_TX(r+2)d, ULS_TX(r+3)d) applied to first sensors disposed at a center portion of the sensor unit 120.

[0175] exist Fig.21 , a first encoding matrix EMT1 applied to first sensors (e.g., TX1, TX2, TX3, ...) sequentially arranged at the edge of the sensor unit 120 is shown as an example. The first row of the first encoding matrix EMT1 may be a code of the first drive signal ULS_TX1d applied to the first sensor TX1. The second row of the first encoding matrix EMT1 may be a code of the first drive signal ULS_TX2d applied to the first sensor TX2. The third row of the first encoding matrix EMT1 may be a code of the first drive signal ULS_TX3d applied to the first sensor TX3. The fourth row of the first encoding matrix EMT1 may be a code of the first drive signal ULS_TX4d applied to the first sensor. Among the codes, 1 and -1 may indicate voltage pulses with opposite phases. The first column of the first encoding matrix EMT1 may indicate a code to be applied in the first period p1, the second column of the first encoding matrix EMT1 may indicate a code to be applied in the second period p2, the third column of the first encoding matrix EMT1 may indicate a code to be applied in the third period p3, and the fourth column of the first encoding matrix EMT1 may indicate a code to be applied in the fourth period p4.

[0176] Therefore, the sensor unit 120 may transmit the uplink signal ULS corresponding to code 4 in the first period p1, transmit the uplink signal ULS corresponding to code 0 in the second period p2, transmit the uplink signal ULS corresponding to code 0 in the third period p3, and transmit the uplink signal ULS corresponding to code 0 in the fourth period p4. Therefore, the sensor unit 120 may transmit the uplink signal ULS in which constructive interference has partially occurred during the first period p1.

[0177] exist Fig. 22 , a second encoding matrix EMT2 applied to four first sensors sequentially arranged at the central portion of the sensor unit 120 is shown as an example. The first row of the second encoding matrix EMT2 may be a code for the first drive signal ULS_TXrd applied to the rth first sensor. The second row of the second encoding matrix EMT2 may be a code for the first drive signal ULS_TX(r+1)d applied to the r+1th first sensor. The third row of the second encoding matrix EMT2 may be a code for the first drive signal ULS_TX(r+2)d applied to the r+2th first sensor. The fourth row of the second encoding matrix EMT2 may be a code for the first drive signal ULS_TX(r+3)d applied to the r+3th first sensor. Among the codes, 1 and -1 may indicate voltage pulses with opposite phases. The first column of the second encoding matrix EMT2 may indicate the code to be applied in the first time period p1, the second column of the second encoding matrix EMT2 may indicate the code to be applied in the second time period p2, the third column of the second encoding matrix EMT2 may indicate the code to be applied in the third time period p3, and the fourth column of the second encoding matrix EMT2 may indicate the code to be applied in the fourth time period p4.

[0178] Therefore, the sensor unit 120 can send an uplink signal ULS corresponding to code 2 in the first time period p1, send an uplink signal ULS corresponding to code 2 in the second time period p2, send an uplink signal ULS corresponding to code 2 in the third time period p3, and send an uplink signal ULS corresponding to code 2 in the fourth time period p4.

[0179] Reference Fig.21 and Fig. 22 , a voltage level of the uplink signal ULS of code 4 transmitted from the edge of the sensor unit 120 during the first period p1 may be twice a voltage level of the uplink signal ULS of code 2 transmitted from the central portion of the sensor unit 120 .

[0180] because Fig.21 and Fig. 22 The description of can be similarly applied to the second driving signal of the second sensor, and thus redundant description will be omitted.

[0181] In addition, already in Figures 14 to 22 The voltage level, frequency, phase and code are described separately in Figures 14 to 22 One or more embodiments of the present invention may be combined with each other.

[0182] Figure 23 to Figure 29 It is a diagram for explaining the configuration of a display device. Figure 23 to Figure 29 The reference numerals and Figures 1 to 22 The reference numerals are independent of each other.

[0183] Fig.23 is a diagram for explaining a substrate according to some embodiments of the present disclosure, Fig.24 is a diagram for explaining a display device according to some embodiments of the present disclosure.

[0184] In the following embodiments, the position of the plane may be defined by the first direction DR1 and the second direction DR2, and the position of the height may be defined by the third direction DR3 (see Fig.25 ). The first direction DR1, the second direction DR2, and the third direction DR3 may be directions orthogonal to each other.

[0185] The substrate SUB may include a display area DA, a non-display area NDA, a first additional area ADA1, and a second additional area ADA2.

[0186] The display area DA may have a rectangular shape. Each corner of the display area DA may have an angled shape or a curved shape. In addition, in the case of a circular display, the display area DA may have a circular shape. In addition, the display area DA may have a polygonal shape other than a quadrilateral shape as well as an elliptical shape. In this way, the shape of the display area DA may be set differently according to the product.

[0187] Pixels may be disposed in the display area DA. Depending on the type of the display device DP, the corresponding pixels may include a light emitting diode or a liquid crystal layer.

[0188] The non-display area NDA may surround the periphery of the display area DA. For example, the non-display area NDA may have a rectangular shape. Each corner of the non-display area NDA may have an angled shape or a curved shape. Fig.24 An embodiment is shown in which each corner of the non-display area NDA has a curved shape. The non-display area NDA may have a circular shape. In order to minimize or reduce the non-display area NDA in a narrow frame structure, the shape of the non-display area NDA may be similar to that of the display area DA.

[0189] The first additional area ADA1 may be disposed between the non-display area NDA and the second additional area ADA2. The first additional area ADA1 may be connected to the non-display area NDA at a first boundary ED1. The first additional area ADA1 may be connected to the second additional area ADA2 at a second boundary ED2. Each of the first boundary ED1 and the second boundary ED2 may extend in a first direction DR1.

[0190] The width of the first additional area ADA1 may be narrowed from the first boundary ED1 to the second boundary ED2. For example, the width of the first additional area ADA1 in the first direction DR1 may be narrowed toward the second direction DR2, in other words, the width of the first additional area ADA1 in the first direction DR1 may be narrowed away from the display area DA. For example, the length of the first boundary ED1 in the first direction DR1 may be greater than the length of the second boundary ED2 in the first direction DR1. Therefore, the first additional area ADA1 may include a curved first side surface RC1 and a second side surface RC2. The side surfaces RC1 and RC2 may be curved toward the inside of the substrate SUB (e.g., the center of the substrate SUB).

[0191] exist Fig.24 , the first additional area ADA1 is shown to include two side surfaces RC1 and RC2 in the first direction DR1 and the opposite direction of the first direction DR1. In some embodiments, because the boundary positioned in the first direction DR1 coincides with the boundary of the non-display area NDA, the first additional area ADA1 may include only the first side surface RC1. In some embodiments, because the boundary positioned in the opposite direction of the first direction DR1 coincides with the boundary of the non-display area NDA, the first additional area ADA1 may include only the second side surface RC2.

[0192] The second additional area ADA2 may have a rectangular shape. Each corner of the second additional area ADA2 may have an angled shape or a curved shape.

[0193] The encapsulation film TFE may be disposed on the pixel. For example, the encapsulation film TFE may cover the pixel in the display area DA, and the boundary of the encapsulation film TFE may be disposed in the non-display area NDA. The encapsulation film TFE may cover the light emitting elements and circuit elements of the pixel in the display area DA, thereby preventing damage caused by external moisture or impact.

[0194] The sensing electrodes SC1 and SC2 may be disposed on the packaging film TFE. The sensing electrodes SC1 and SC2 may detect touch, hovering, gesture, or proximity of a user's body, etc. The sensing electrodes SC1 and SC2 may be configured in different shapes according to various methods such as a resistive type, a capacitive type, an electromagnetic induction type (EMI), an electromagnetic resonance type (EMR), and an optical type. For example, when the sensing electrodes SC1 and SC2 are configured as a capacitive type, the sensing electrodes SC1 and SC2 may be configured as a self-capacitive type or a mutual-capacitive type. Hereinafter, for better understanding and ease of description, a case in which the sensing electrodes SC1 and SC2 are configured as a mutual-capacitive type will be described as an example.

[0195] When the sensing electrodes SC1 and SC2 are configured as a mutual capacitance type, a drive signal is sent through a sensing line corresponding to the first sensing electrode SC1, and a sensing signal can be received through a sensing line corresponding to the second sensing electrode SC2, and the second sensing electrode SC2 forms a mutual capacitance with the first sensing electrode SC1. When the user's body approaches, the mutual capacitance between the first sensing electrode SC1 and the second sensing electrode SC2 can change, and whether the user's touch exists can be determined based on the difference between the sensing signals. In some embodiments, a drive signal can be sent through a sensing line corresponding to the second sensing electrode SC2, and a sensing signal can be received through a sensing line corresponding to the first sensing electrode SC1, and the first sensing electrode SC1 forms a mutual capacitance with the second sensing electrode SC2.

[0196] Pads (also referred to as "pads") PDE1, PDE2, and PDE3 may be disposed in the second additional area ADA2. Pads PDE1 and PDE3 may be connected to sensing electrodes SC1 and SC2 disposed on the encapsulation film TFE through sensing wirings IST1 and IST2. Pads PDE1 and PDE3 may be connected to an external touch integrated chip (IC). In addition, pad PDE2 may be connected to a pixel or a driver of a pixel disposed under the encapsulation film TFE through a display wiring DST. The driver may include a scan driver, a light emitting driver, and / or a data driver, etc. The driver may be disposed under the encapsulation film TFE, or may be disposed on an external display IC connected through pad PDE2.

[0197] When the display device DP is a mutual capacitance type, the touch IC can send a drive signal through the first sensing wiring IST1, and can receive a sensing signal through the second sensing wiring IST2. In some embodiments, a drive signal can be sent through the second sensing wiring IST2, and a sensing signal can be received through the first sensing wiring IST1. For reference, when the display device DP is a self-capacitance type, there may be no difference in the driving method of the first sensing wiring IST1 and the second sensing wiring IST2. The display wiring DST may include a control line, a data line and / or a power line, etc., and may provide a signal so that the pixel can display an image. These signals may be provided from a driver connected to the data line DL.

[0198] Fig.23 shows a state in which the substrate SUB is bent, Fig.24 1 shows a state in which the substrate SUB is not bent. The display device DP can be Fig.24 After stacking components on the substrate SUB in the unbent state shown in FIG. Fig.23 Bend as shown in FIG.

[0199] The substrate SUB may include a first curved area BA1 extending from a first side surface RC1 of the first additional area ADA1 to overlap with the non-display area NDA. In addition, the first curved area BA1 may extend to overlap with the display area DA. For example, each of the display area DA, the non-display area NDA, and the first additional area ADA1 may partially overlap with the first curved area BA1. The first curved area BA1 may have a width in a first direction DR1 and may extend in length in a second direction DR2. The first bending axis BX1 may be defined as a folding line extending from the center of the first curved area BA1 along the second direction DR2. In some embodiments, the first curved area BA1 may be a portion in which stress is reduced by removing a portion of its insulating film, unlike other portions nearby. In some embodiments, the first curved area BA1 may have the same or substantially the same construction as other portions around it.

[0200] The substrate SUB may include a third curved area BA3 extending from the second side surface RC2 of the first additional area ADA1 to overlap the non-display area NDA. In addition, the third curved area BA3 may extend to overlap the display area DA. For example, each of the display area DA, the non-display area NDA, and the first additional area ADA1 may partially overlap the third curved area BA3. The third curved area BA3 may have a width in the first direction DR1 and may extend in length in the second direction DR2. The third bending axis BX3 may be defined as a folding line extending from the center of the third curved area BA3 along the second direction DR2. In some embodiments, the third curved area BA3 may be a portion in which stress is reduced by removing a portion of its insulating film, unlike other portions near it. In some embodiments, the third curved area BA3 may have the same or substantially the same construction as other portions around it.

[0201] The second additional area ADA2 may include a second bending area BA2. The second bending area BA2 may have a width in the second direction DR2 and may extend in length in the first direction DR1. The second bending axis BX2 may be defined as a folding line extending from the center of the second bending area BA2 along the first direction DR1. In some embodiments, the second bending area BA2 may be a portion in which stress is reduced by removing a portion of its insulating film, unlike other portions nearby. In some embodiments, the second bending area BA2 may have the same or substantially the same construction as other portions around it.

[0202] The first to third bending areas BA1 , BA2 , and BA3 may not overlap each other.

[0203] Here, the term "folding" means that the shape is not fixed, but the original shape can be changed into another shape, and the shape is folded, bent or curled along one or more bending axes. Through the first bending area BA1 and the third bending area BA3, the side frame width in the opposite direction of the first direction DR1 of the display device DP and the side frame width in the first direction DR1 can be reduced. In addition, the side frame width in the second direction DR2 of the display device DP can be reduced by the second bending area BA2.

[0204] Fig.25 Shown along Fig.24 A cross-sectional view taken along line II'. Fig.24 The line II′ in FIG. 1 passes through the first pad PDE1 and the first sensing wiring IST1 .

[0205] First, the display area DA will be described. In some embodiments, the pixel PX may be disposed in the display area DA. Each pixel PX may include a transistor connected to a corresponding wiring among the display wirings DST, a light emitting element connected to the transistor, and a capacitor Cst. Fig.25 In the figure, for better understanding and convenience of description, one transistor, one light emitting element and one capacitor Cst are shown as an example of a pixel PX.

[0206] The substrate SUB may be made of an insulating material such as glass or resin. In addition, the substrate SUB may be made of a bendable or foldable flexible material and may have a single-layer structure or a multi-layer structure.

[0207] For example, the substrate SUB may include at least one of polystyrene, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate. However, the material included in the substrate SUB may be variously changed and may also include fiber reinforced plastic (FRP).

[0208] For example, when the substrate SUB has a multi-layer structure, an inorganic material such as silicon nitride, silicon oxide, and silicon oxynitride may be disposed between the multiple layers, in a single layer, or in multiple layers.

[0209] The buffer film BF may cover the substrate SUB. The buffer film BF may prevent impurities from diffusing into the channel CH of the transistor. The buffer film BF may be an inorganic insulating film made of an inorganic material. For example, the buffer film BF may be made of silicon nitride, silicon oxide and / or silicon oxynitride, etc., and may be omitted according to the material and process conditions of the substrate SUB. In some embodiments, a barrier layer may be further provided.

[0210] The active film ACT may be disposed on the buffer film BF. The active film ACT may be patterned to form a channel CH, a source electrode and a drain electrode of a transistor or to form wiring. The active film ACT may be made of a semiconductor material. The active film ACT may be a semiconductor pattern made of polycrystalline silicon, amorphous silicon and / or an oxide semiconductor. The channel of the transistor is a semiconductor pattern not doped with impurities and may be an intrinsic semiconductor. The source electrode, the drain electrode and the wiring may be a semiconductor pattern doped with impurities. N-type impurities, P-type impurities and other impurities (such as metals) may be used as impurities.

[0211] The first gate insulating film GI1 may cover the active film ACT. The first gate insulating film GI1 may be an inorganic insulating film made of an inorganic material. The inorganic material may include silicon nitride, silicon oxide, and / or silicon oxynitride, or the first gate insulating film GI1 may be made of polysiloxane.

[0212] The gate electrode GE of the transistor and the lower electrode LE of the capacitor Cst may be disposed on the first gate insulating film GI1. The gate electrode GE may overlap a region corresponding to the channel CH.

[0213] The gate electrode GE and the lower electrode LE may be made of metal. For example, the gate electrode GE may be made of at least one of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. In addition, the gate electrode GE may be formed as a single-layer film, but is not limited thereto, and may be formed as a multilayer film in which two or more materials among metals and alloys are stacked.

[0214] The second gate insulating film GI2 may cover the gate electrode GE and the lower electrode LE. The second gate insulating film GI2 may be an inorganic insulating film made of an inorganic material. The inorganic material may include silicon nitride, silicon oxide, and / or silicon oxynitride, or the second gate insulating film GI2 may be made of polysiloxane.

[0215] The upper electrode UE of the capacitor Cst may be disposed on the second gate insulating film GI2. The upper electrode UE of the capacitor Cst may be made of a metal. For example, the upper electrode UE may be made of at least one of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof. In addition, the upper electrode UE may be formed as a single-layer film, but is not limited thereto, and may be formed as a multilayer film in which two or more materials among metals and alloys are stacked.

[0216] The lower electrode LE and the upper electrode UE may constitute a capacitor Cst, with the second gate insulating film GI2 interposed between the lower electrode LE and the upper electrode UE. Fig.25 , the capacitor Cst is shown as having a two-layer electrode structure including a lower electrode LE and an upper electrode UE, but in some embodiments, the capacitor Cst may have a three-layer electrode structure by using an active film ACT, or may have a three-layer electrode structure or a four-layer or more electrode structure by using an electrode of the same or substantially the same layer as the first connection pattern CNP1.

[0217] The interlayer insulating film ILD may cover the upper electrode UE. The interlayer insulating film ILD may be an inorganic insulating layer made of an inorganic material. The inorganic material may include silicon nitride, silicon oxide, and / or silicon oxynitride, or the interlayer insulating film ILD may be made of polysiloxane.

[0218] In this embodiment, for better understanding and convenience of description, the first gate insulating film GI1, the second gate insulating film GI2 and the interlayer insulating film ILD may be referred to as a first insulating film group ING1. The first insulating film group ING1 may cover a portion of the transistor. In some embodiments, the first insulating film group ING1 may further include a buffer film BF.

[0219] The first connection pattern CNP1 may be disposed on the interlayer insulating film ILD and may contact the source electrode and the drain electrode of the active film ACT through contact holes formed in the interlayer insulating film ILD, the second gate insulating film GI2, and the first gate insulating film GI1, respectively.

[0220] The first connection pattern CNP1 may be made of metal. For example, the first connection pattern CNP1 may be made of at least one of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0221] In some embodiments, a passivation film may cover the first connection pattern CNP1. The passivation film may be an inorganic insulating film made of an inorganic material. The inorganic material may include silicon nitride, silicon oxide, and / or silicon oxynitride, or the passivation film may be made of polysiloxane.

[0222] The first via film VIA1 may cover a passivation film or a transistor. The first via film VIA1 may be an organic insulating film made of an organic material. The organic material may be an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorine-based carbon compound such as Teflon, and / or a benzocyclobutene compound, etc. The organic insulating film may be deposited by a method such as evaporation.

[0223] The second connection pattern CNP2 may be connected to the first connection pattern CNP1 through the opening of the first via film VIA1. The second connection pattern CNP2 may be made of at least one of gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), or an alloy thereof.

[0224] The second via film VIA2 may cover the first via film VIA1 and the second connection pattern CNP2. The second via film VIA2 may be an organic insulating film made of an organic material. The organic material may include an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorine-based carbon compound such as Teflon, and / or a benzocyclobutene compound.

[0225] The first light emitting element electrode LDE1 may be connected to the second connection pattern CNP2 through the opening of the second via film VIA2. Here, in some embodiments, the first light emitting element electrode LDE1 may be an anode of the light emitting element.

[0226] In some embodiments, the configuration of the second via film VIA2 and the second connection pattern CNP2 may be omitted, and the first light emitting element electrode LDE1 may be directly connected to the first connection pattern CNP1 through the opening of the first via film VIA1 .

[0227] The first light emitting element electrode LDE1 may be made of a metal film such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and alloys thereof, and / or a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium tin zinc oxide (ITZO). The first light emitting element electrode LDE1 may be made of one type of metal, but is not limited thereto, and may be made of two or more types of metals (e.g., an alloy of Ag and Mg).

[0228] When an image is to be provided in a lower direction of the substrate SUB, the first light emitting element electrode LDE1 may be formed of a transparent conductive film. When an image is to be provided in an upper direction of the substrate SUB, the first light emitting element electrode LDE1 may be formed of a metal reflective film and / or a transparent conductive film.

[0229] The pixel defining film PDL that separates the light emitting area of ​​each pixel PX is disposed on the substrate SUB on which the first light emitting element electrode LDE1 is formed. The pixel defining film PDL may be an organic insulating layer made of an organic material. The organic material may be an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorine-based carbon compound such as Teflon, and / or a benzocyclobutene compound, etc.

[0230] The pixel defining film PDL may expose the upper surface of the first light emitting element electrode LDE1 and may protrude from the substrate SUB along the periphery of the pixel PX. The light emitting film EML may be disposed in a region of the pixel PX surrounded by the pixel defining film PDL (eg, around the periphery of the pixel defining film PDL).

[0231] The light-emitting film EML may include a low molecular weight material or a high molecular weight material. The low molecular weight material may include copper phthalocyanine (CuPc), (N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine: NPB) and / or (tri-8-hydroxyquinoline aluminum) (Alq 3 ) etc. These materials can be formed by vacuum evaporation. The polymer material can include PEDOT, polyphenylene vinylene (PPV) materials and / or polyfluorene materials.

[0232] The light-emitting film EML may be provided as a single layer, or may be provided as a multilayer including various functional layers. When the light-emitting film EML is provided as a multilayer, it may have a structure in which a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) are stacked in a single or complex structure. Such a light-emitting film EML may be formed by a screen printing method, an inkjet printing method, or a laser induced thermal imaging (LITI) method.

[0233] In some embodiments, at least a portion of the light emitting film EML may be integrally formed on the plurality of first light emitting element electrodes LDE1 , or the light emitting film EML may be individually provided to correspond to each of the plurality of first light emitting element electrodes LDE1 .

[0234] The second light emitting element electrode LDE2 may be disposed on the light emitting film EML. The second light emitting element electrode LDE2 may be disposed for each pixel PX, but may be disposed to cover most of the display area DA, and may be shared by a plurality of pixels PX.

[0235] In some embodiments, the second light emitting element electrode LDE2 may be used as a cathode or an anode. When the first light emitting element electrode LDE1 is an anode, the second light emitting element electrode LDE2 may be used as a cathode, and when the first light emitting element electrode LDE1 is a cathode, the second light emitting element electrode LDE2 may be used as an anode.

[0236] The second light-emitting element electrode LDE2 may be formed of a metal film such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and / or a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) and indium tin zinc oxide (ITZO). In some embodiments of the present disclosure, the second light-emitting element electrode LDE2 may be formed of a single-layer film, a double-layer film or more films including a metal thin film. For example, the second light-emitting element electrode LDE2 may be formed of a three-layer film of ITO / Ag / ITO.

[0237] When an image is to be provided in a lower direction of the substrate SUB, the second light emitting element electrode LDE2 may be formed of a metal reflective film and / or a transparent conductive film. When an image is to be provided in an upper direction of the substrate SUB, the second light emitting element electrode LDE2 may be formed of a transparent conductive film.

[0238] The above-mentioned group of the first light emitting element electrode LDE1 , the light emitting film EML, and the second light emitting element electrode LDE2 may be referred to as a light emitting element.

[0239] The encapsulation film TFE may be disposed on the second light emitting element electrode LDE2. The encapsulation film TFE may be formed as a single layer, but may also be formed as a multilayer. In some embodiments, the encapsulation film TFE may include a first encapsulation film ENC1, a second encapsulation film ENC2, and a third encapsulation film ENC3. The first encapsulation film ENC1, the second encapsulation film ENC2, and the third encapsulation film ENC3 may be made of an organic material and / or an inorganic material. The third encapsulation film ENC3 disposed on the outermost side may be made of an inorganic material. For example, the first encapsulation film ENC1 may be an inorganic film made of an inorganic material, the second encapsulation film ENC2 may be an organic film made of an organic material, and the third encapsulation film ENC3 may be an inorganic film made of an inorganic material. Compared with organic materials, inorganic materials allow less penetration of moisture and oxygen, but are easily broken due to their low elasticity or low flexibility. By forming the first encapsulation film ENC1 and the third encapsulation film ENC3 with an inorganic material and forming the second encapsulation film ENC2 with an organic material, the propagation of cracks may be prevented or reduced. Here, the layer made of organic material (i.e., the second encapsulation film ENC2) can be completely covered by the third encapsulation film ENC3 so that its end is not exposed to the outside. The organic material may include an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorine-based carbon compound such as Teflon, and / or a benzocyclobutene compound, etc. The inorganic material may include silicon nitride, silicon oxide, and / or silicon oxynitride, etc. In addition, polysiloxane may be used to form the first encapsulation film ENC1 and the third encapsulation film ENC3.

[0240] The light-emitting film EML forming the light-emitting element may be easily damaged by moisture or oxygen from the outside. The encapsulation film TFE may protect the light-emitting film EML by covering the light-emitting film EML. The encapsulation film TFE may cover the display area DA and may extend to the non-display area NDA outside the display area DA. However, although the insulating film made of organic material is advantageous in flexibility and elasticity, it may make moisture and oxygen more easily permeable compared to the insulating film made of inorganic material. In some embodiments of the present disclosure, in order to prevent moisture or oxygen from penetrating through the insulating film made of organic material, the end of the insulating film made of organic material may be covered by an insulating film made of inorganic material so as not to be exposed to the outside. For example, the first via film VIA1, the second via film VIA2 and the pixel defining film PDL made of organic material may extend discontinuously to the non-display area NDA and may be covered by the first encapsulation film ENC1. Therefore, the upper surface of the pixel defining film PDL, the first via film VIA1 , the second via film VIA2 , and the side surface of the pixel defining film PDL may be encapsulated by the encapsulation film TFE including an inorganic material, thereby preventing them from being exposed to the outside.

[0241] The encapsulation film TFE may be multi-layered. However, the material of the encapsulation film TFE is not limited thereto and may be variously changed. For example, the encapsulation film TFE may include a plurality of organic material layers and a plurality of inorganic material layers alternately stacked.

[0242] The first sensing electrode layer ISM1 may be disposed on the packaging film TFE. In some embodiments, an additional buffer film may be disposed between the first sensing electrode layer ISM1 and the packaging film TFE. The first sensing electrode layer ISM1 may be formed of a metal film such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and / or a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium tin zinc oxide (ITZO).

[0243] The first sensing insulating film ISI1 may exist on the first sensing electrode layer ISM1. The first sensing insulating film ISI1 may be an inorganic insulating film made of an inorganic material. The inorganic material may include an inorganic insulating material such as silicon nitride, silicon oxide, and / or silicon oxynitride, or the first sensing insulating film ISI1 may be made of polysiloxane.

[0244] The second sensing electrode layer ISM2 may be present on the first sensing insulating film ISI1. The second sensing electrode layer ISM2 may be formed of a metal film such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and / or a transparent conductive film such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium tin zinc oxide (ITZO).

[0245] Various suitable input detectors can be constructed by using the first sensing electrode layer ISM1, the first sensing insulating film ISI1 and the second sensing electrode layer ISM2, which will be described later in Figure 27 to Figure 29 Describe in.

[0246] exist Fig.25 In some embodiments, the second sensing electrode layer ISM2 may be patterned to construct the first pattern IST1a of the first sensing wiring IST1.

[0247] The second sensing insulating film ISI2 may be present on the second sensing electrode layer ISM2. The second sensing insulating film ISI2 may be formed of an organic film. For example, the organic film may include an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorine-based carbon compound such as Teflon, and / or a benzocyclobutene compound, etc. For example, the second sensing insulating film ISI2 may be made of polymethyl methacrylate, polydimethylsiloxane, polyimide, acrylate, polyethylene terephthalate, or polyethylene naphthalate.

[0248] Hereinafter, the non-display area NDA, the first additional area ADA1, and the second additional area ADA2 will be described. Fig.25 In the cross-sectional view of FIG. 1 , since the difference between the non-display area NDA and the first additional area ADA1 is not a feature related to the concept of the present disclosure, the non-display area NDA and the first additional area ADA1 will not be described separately. Hereinafter, in the description of the non-display area NDA and the second additional area ADA2, the above contents will be omitted or simply described to avoid repeated description.

[0249] The dam DAM may be disposed at a boundary of the second encapsulation film ENC2. For example, the dam DAM may be disposed between the planarization film FLT and the second encapsulation film ENC2. The dam DAM may have a multilayer structure and may, for example, include a first dam DAM1 and a second dam DAM2. For example, the first dam DAM1 and the second dam DAM2 may be made of an organic material. Each of the first dam DAM1 and the second dam DAM2 may correspond to one of the first via film VIA1, the second via film VIA2, and the pixel defining film PDL. For example, when the first dam DAM1 is made of the same or substantially the same material as the first via film VIA1 and is made by the same or substantially the same process as the first via film VIA1, the second dam DAM2 may be made of the same or substantially the same material as the second via film VIA2 or the pixel defining film PDL and is made by the same or substantially the same process as the second via film VIA2 or the pixel defining film PDL. As another example, when the first dam DAM1 is made of the same or substantially the same material as the second via film VIA2 and is made by the same or substantially the same process as the second via film VIA2, the second dam DAM2 may be made of the same or substantially the same material as the pixel definition film PDL and is made by the same or substantially the same process as the pixel definition film PDL. In addition, when the spacer is formed at the pixel definition film PDL of the display area DA (e.g., in or on the pixel definition film PDL), the dam DAM may be formed by using the same or substantially the same material as the spacer.

[0250] The dam DAM can prevent or substantially prevent the organic material with high fluidity of the second encapsulation film ENC2 from overflowing to the outside of the dam DAM during the process. The first encapsulation film ENC1 and the third encapsulation film ENC3 made of inorganic material cover the dam DAM and extend beyond the dam DAM, thereby enhancing adhesion with the substrate SUB or other films on the substrate SUB.

[0251] The first pad PDE1 may be disposed on the substrate SUB but may be spaced apart from the planarization film FLT. The first pad PDE1 may be supported by the second insulation film group ING2. The respective insulation films of the second insulation film group ING2 may correspond to the respective insulation films of the first insulation film group ING1. The first pad PDE1 may include a first pad electrode PDE1a and a second pad electrode PDE1b. The first pad electrode PDE1a may be made of the same or substantially the same material as the first connection pattern CNP1. The second pad electrode PDE1b may be made of the same or substantially the same material as the second connection pattern CNP2.

[0252] The planarization film FLT may be disposed on the substrate SUB, but may be spaced apart from the area covered by the encapsulation film TFE. The planarization film FLT may be an organic insulating film made of an organic material. The organic material may be an organic insulating material such as a polyacrylic compound, a polyimide compound, a fluorine-based carbon compound such as Teflon, and / or a benzocyclobutene compound, etc.

[0253] In this embodiment, the planarization film FLT may be formed after forming the interlayer insulating film ILD and before forming the first connection pattern CNP1. Therefore, the planarization film FLT and the first via film VIA1 may be formed by different processes. In some embodiments, the planarization film FLT and the first via film VIA1 may include different organic materials.

[0254] One end of the planarization film FLT may cover the first insulation film group ING1. In addition, a portion of the planarization film FLT corresponding to the second bending area BA2 may fill the first trench TCH1 between the first insulation film group ING1 and the second insulation film group ING2.

[0255] Since the inorganic insulating film has high hardness and low flexibility compared to the organic insulating film, the probability of crack generation is relatively high. When cracks are generated in the inorganic insulating film, the cracks may propagate to the wiring on the inorganic insulating film, eventually causing defects such as wiring breakage.

[0256] In some embodiments, the inorganic insulating layer may be removed from the second bending area BA2 so that the first trench TCH1 may be formed, and the first insulating film group ING1 and the second insulating film group ING2 may be divided. In some embodiments, all of the inorganic insulating film corresponding to the area of ​​the first trench TCH1 is removed, but in some embodiments, some of the inorganic insulating film may remain. In this case, some of the remaining inorganic insulating film may include slits, thereby dispersing the bending stress.

[0257] The second pattern IST1b of the first sensing wiring IST1 may extend on the planarization film FLT and may be electrically connected to the first pad PDE1. In some embodiments, the second pattern IST1b may be made of the same or substantially the same material and by the same or substantially the same process as the first connection pattern CNP1.

[0258] The first wiring protection film LPL1 may cover the planarization film FLT and the second pattern IST1b. In addition, the second wiring protection film LPL2 may cover the first wiring protection film LPL1. In some embodiments, the construction of the second wiring protection film LPL2 may be omitted. The first wiring protection film LPL1 and the second wiring protection film LPL2 may be made of an organic material. Each of the first wiring protection film LPL1 and the second wiring protection film LPL2 may correspond to one of the first via film VIA1, the second via film VIA2, and the pixel defining film PDL. For example, when the first wiring protection film LPL1 is made of the same or substantially the same material as the first via film VIA1 and is made by the same or substantially the same process as the first via film VIA1, the second wiring protection film LPL2 may be made of the same or substantially the same material as the second via film VIA2 or the pixel defining film PDL and is made by the same or substantially the same process as the second via film VIA2 or the pixel defining film PDL. As another example, when the first wiring protection film LPL1 is made of the same or substantially the same material as the second via film VIA2 and is made by the same or substantially the same process as the second via film VIA2, the second wiring protection film LPL2 can be made of the same or substantially the same material as the pixel defining film PDL and is made by the same or substantially the same process as the pixel defining film PDL.

[0259] The first and second wiring protection films LPL1 and LPL2 and the first sensing insulating film ISI1 may include first openings OPN1 exposing the second patterns IST1 b .

[0260] The first pattern IST1a may be connected to the second pattern IST1b through the first opening OPN1. According to some embodiments, the second pattern IST1b disposed on one end of the first insulating film group ING1 and the planarization film FLT may have a height greater than that of the second pattern IST1b disposed on the planarization film FLT corresponding to the first trench TCH1.

[0261] Therefore, the first pattern IST1a and the second pattern IST1b can be directly connected without a bridge wiring, and since there is no bridge wiring, the connection reliability between the first pattern IST1a and the second pattern IST1b is improved. In addition, since the length of the non-display area NDA can be reduced as much as the length of the bridge wiring, it is possible to reduce the invalid area and achieve a thin frame.

[0262] The third pattern IST1c of the first sensing wiring IST1 may connect the first pad PDE1 and the second pattern IST1b. The third pattern IST1c may be made of the same or substantially the same material as the gate electrode GE of the transistor and may be made by the same or substantially the same process as the gate electrode GE of the transistor. In some embodiments, the third pattern IST1c may be made of the same or substantially the same material as the upper electrode UE and may be made by the same or substantially the same process as the upper electrode UE. In some embodiments, the odd-numbered third pattern IST1c may be formed of the same or substantially the same material as the gate electrode GE of the transistor and may be formed in the same or substantially the same process as the gate electrode GE of the transistor. In some embodiments, the even-numbered third pattern IST1c may be formed of the same or substantially the same material as the upper electrode UE and may be formed in the same or substantially the same process as the upper electrode UE. On the contrary, the even-numbered third pattern IST1c may be formed of the same or substantially the same material as the gate electrode GE of the transistor and may be formed in the same or substantially the same process as the gate electrode GE of the transistor, and the odd-numbered third pattern IST1c may be formed of the same or substantially the same material as the upper electrode UE and may be formed in the same or substantially the same process as the upper electrode UE. Therefore, a short circuit between adjacent wirings can be prevented more effectively.

[0263] The second insulating film group ING2 may include second openings OPN2 exposing the third pattern IST1c. In addition, the planarization film FLT may include openings corresponding to the second openings OPN2. The second pattern IST1b may be connected to the third pattern IST1c through the second openings OPN2.

[0264] Fig.26 It is along Fig.24 A cross-sectional view taken along line II-II'.

[0265] Fig.24 The line II-II' may correspond to the first bending axis BX1. However, the same or substantially the same embodiment may be applied not only to the first side surface RC1 but also to the second side surface RC2.

[0266] Display wiring DST (see e.g. Fig.24) may be constructed of a single-layer wiring or a multi-layer wiring by using at least one of the wirings G1L, G2L, and SDL. The wiring G1L may be made of the same or substantially the same material as the gate electrode GE, and made by the same or substantially the same process as the gate electrode GE. The wiring G2L may be made of the same or substantially the same material as the upper electrode UE, and made by the same or substantially the same process as the upper electrode UE. The wiring SDL may be made of the same or substantially the same material as the first connection pattern CNP1, and made by the same or substantially the same process as the first connection pattern CNP1.

[0267] Sense wiring IST1 and IST2 (see Fig.24 ) patterns IST1a and IST2a may be disposed on the encapsulation film TFE and the first sensing insulating film ISI1 (based on the third direction DR3), and may be disposed between the dam DAM and the display area DA (based on the second direction DR2). The first sensing insulating film ISI1 may be disposed between the encapsulation film TFE and the sensing wirings IST1 and IST2.

[0268] Fig. 27 and Fig.28 Sensing electrodes and bridging electrodes are shown according to some embodiments of the present disclosure. Fig.28 Shown along Fig. 27 A cross-sectional view taken along line III-III'.

[0269] The bridge electrode CP1 may be provided on the packaging film TFE by patterning the first sensing electrode layer ISM1.

[0270] The first sensing insulating film ISI1 may cover the bridge electrode CP1 , and may include a contact hole CNT exposing a portion of the bridge electrode CP1 .

[0271] First and second sensing electrodes SC1 and SC2 may be formed at (eg, in or on) the first sensing insulating film ISI1 by patterning the second sensing electrode layer ISM2 The first sensing electrode SC1 may be connected to the bridge electrode CP1 through the contact hole CNT.

[0272] The second sensing electrode SC2 may have the connection pattern CP2 in the same layer by patterning the second sensing electrode layer ISM2. Therefore, a separate bridge electrode may not be required to connect the second sensing electrode SC2.

[0273] In some embodiments, each of the sensing electrodes SC1 and SC2 may cover a plurality of pixels PX. When each of the sensing electrodes SC1 and SC2 is formed of an opaque conductive film, a plurality of openings may be included, and the covered plurality of pixels PX may be exposed through the plurality of openings. For example, each of the sensing electrodes SC1 and SC2 may be configured in a grid shape. When each of the sensing electrodes SC1 and SC2 is formed of a transparent conductive film, each of the sensing electrodes SC1 and SC2 may be formed in the form of a plate without an opening.

[0274] Fig.29 Sensing electrodes and bridging electrodes are shown according to some embodiments of the present disclosure.

[0275] Fig.29 Shown along Fig. 27 Another cross-sectional view taken along line III-III'.

[0276] The first and second sensing electrodes SC1 and SC2 may be formed by patterning the first sensing electrode layer ISM1 to be disposed on the packaging film TFE.

[0277] The first sensing insulating film ISI1 may cover the first and second sensing electrodes SC1 and SC2 , and may include a contact hole CNT exposing a portion of the first sensing electrode SC1 .

[0278] The bridge electrode CP1 may be formed by providing a second sensing electrode layer ISM2 (see, for example, FIG. 1 ) disposed on the first sensing insulating film ISI1. Fig.26 The bridge electrode CP1 may be connected to the first sensing electrode SC1 through the contact hole CNT.

[0279] The foregoing is an explanation of some embodiments of the present disclosure and should not be interpreted as limiting it. Although some embodiments have been described, it will be readily understood by those skilled in the art that various modifications can be made in the embodiments without departing from the spirit and scope of the present disclosure. It will be understood that, unless otherwise stated, the description of the features or aspects within each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Therefore, as will be clear to those of ordinary skill in the art, unless otherwise explicitly stated, the features, characteristics and / or elements described in conjunction with a specific embodiment can be used alone or in combination with the features, characteristics and / or elements described in conjunction with other embodiments. Therefore, it should be understood that the foregoing is an explanation of various example embodiments and should not be interpreted as being limited to the specific embodiments disclosed herein, and that various modifications to the disclosed embodiments and other example embodiments are intended to be included in the spirit and scope of the present disclosure as defined in the attached claims and their equivalents.

Claims

1. A sensor device, comprising: A sensor layer, comprising a first sensor and a second sensor, wherein the second sensor forms a capacitor with the first sensor; as well as a sensor driver configured to send a driving signal to the first sensor and receive a sensing signal from the second sensor during a touch sensing period, wherein the sensor driver is further configured to send a first drive signal to at least some of the first sensors and a second drive signal to at least some of the second sensors during an object sensing period different from the touch sensing period, and Wherein, during the object sensing period, a first drive signal applied to a first sensor positioned at an edge of the sensor layer is different from a first drive signal applied to a first sensor positioned at a central portion of the sensor layer in at least one of a voltage level, a frequency, a phase, and a code.

2. The sensor device according to claim 1, wherein: During the object sensing period, a second drive signal applied to a second sensor positioned at the edge of the sensor layer is different from a second drive signal applied to a second sensor positioned at the center portion of the sensor layer in at least one of voltage level, frequency, phase, and code.

3. The sensor device according to claim 2, wherein: During the object sensing period, the first drive signal applied to the first sensor positioned at the edge of the sensor layer has a higher signal-to-noise ratio than that of the first drive signal applied to the first sensor positioned at the center portion of the sensor layer.

4. The sensor device according to claim 2, wherein: During the object sensing period, a voltage level of the first driving signal applied to the first sensor positioned at the edge of the sensor layer is different from a voltage level of the first driving signal applied to the first sensor positioned at the center portion of the sensor layer.

5. The sensor device according to claim 4, wherein: During the object sensing period, a voltage level of the first driving signal applied to the first sensor positioned at the edge of the sensor layer is greater than a voltage level of the first driving signal applied to the first sensor positioned at the center portion of the sensor layer.

6. The sensor device according to claim 2, wherein: During the object sensing period, a phase of the first driving signal applied to the first sensor positioned at the edge of the sensor layer is different from a phase of the first driving signal applied to the first sensor positioned at the center portion of the sensor layer.

7. The sensor device according to claim 6, wherein: During the object sensing period, a phase difference between the first driving signals applied to the first sensors positioned at the edge of the sensor layer is smaller than a phase difference between the first driving signals applied to the first sensors positioned at the center portion of the sensor layer.

8. The sensor device according to claim 6, wherein: During the object sensing period, a phase of the first drive signal applied to the first sensor positioned at the edge of the sensor layer is set to cause more constructive interference than a phase of the first drive signal applied to the first sensor positioned at the center portion of the sensor layer.

9. The sensor device according to claim 2, wherein: During the object sensing period, a frequency of the first driving signal applied to the first sensor positioned at the edge of the sensor layer is different from a frequency of the first driving signal applied to the first sensor positioned at the center portion of the sensor layer.

10. The sensor device according to claim 9, wherein: During the object sensing period, a frequency of the first drive signal applied to the first sensor positioned at the edge of the sensor layer is set to cause more constructive interference than a frequency of the first drive signal applied to the first sensor positioned at the center portion of the sensor layer.

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