Ion implantation simulation method, electronic equipment and storage medium

Abstract

The embodiment of the invention relates to a method for ion implantation simulation, electronic equipment and a storage medium. The method comprises the following steps: determining a surface grid to be subjected to ion implantation of a gridded semiconductor device; projecting the surface grid to a projection plane above the highest point in the surface grid along a direction opposite to the ion incidence direction so as to form a projection surface structure in the projection plane; generating a plurality of admission incident points within the projection surface structure; and respectively mapping the plurality of admission points to the surface grid along the ion incidence direction to form a plurality of incidence points at the surface grid. According to the technical scheme, the correct incidence point can be obtained in a simple mode, and the calculation efficiency is remarkably improved.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to semiconductor devices, and more particularly, to methods, electronic devices, and storage media for ion implantation simulation. Background Art

[0002] Ion implantation is the most common method of introducing doping in the semiconductor manufacturing process. Ion implantation can be used to implant impurity atoms into the interior of the semiconductor, which is the basis for the operation of semiconductor devices.

[0003] In addition to building different device structures with different materials, semiconductor process simulation also needs to form different impurity distributions inside the device, which can usually be accomplished through ion implantation and diffusion simulation. Ion implantation simulation introduces impurity atoms into the device, and diffusion simulation activates and diffuses atoms. The combination of the two controls doping concentration and junction depth.

[0004] The object of ion implantation simulation is semiconductor devices. It is necessary to calculate a series of incident points on the device surface and calculate the corresponding incident line structure and intermediate parameters based on the incident points. Traditional solutions require complex processing for slopes, curved surfaces or more complex surfaces, which usually involves more advanced geometric modeling and calculations, resulting in low efficiency. Summary of the invention

[0005] According to an example embodiment of the present disclosure, a scheme for ion implantation simulation is provided to at least partially overcome the above or other potential drawbacks.

[0006] According to one aspect of the present disclosure, a method for ion implantation simulation is provided. The method includes: determining a surface mesh of a gridded semiconductor device to be implanted with ions; projecting the surface mesh in a direction opposite to the ion incident direction to a projection plane above the highest point in the surface mesh to form a projection surface structure in the projection plane; generating a plurality of quasi-incident points in the projection surface structure; and mapping the plurality of quasi-incident points to the surface mesh respectively along the ion incident direction to form a plurality of incident points located at the surface mesh.

[0007] In a second aspect of the present disclosure, an electronic device is provided. The electronic device includes a processor; and a memory coupled to the processor, the memory having instructions stored therein, and when the instructions are executed by the processor, the device performs an action, the action including determining a surface grid of a gridded semiconductor device to be ion-implanted; projecting the surface grid in a direction opposite to the ion incident direction to a projection plane above the highest point in the surface grid to form a projection surface structure in the projection plane; generating multiple quasi-incident points in the projection surface structure; and mapping the multiple quasi-incident points to the surface grid respectively along the ion incident direction to form multiple incident points located at the surface grid.

[0008] In some embodiments, determining the surface mesh to be ion-implanted of the meshed semiconductor device includes: traversing the properties of all meshes of the meshed semiconductor device, and determining the mesh containing both air and other materials in the properties as the surface mesh.

[0009] In some embodiments, generating a plurality of prospective incident points within the projection surface structure includes: uniformly generating a plurality of prospective incident points within the projection surface structure; or generating a plurality of prospective incident points based on a grid density of a surface grid.

[0010] In some embodiments, the surface mesh includes line segments, and wherein uniformly generating multiple quasi-incident points within the projection surface structure includes: determining a projection line segment formed by projection of the line segment in the projection surface structure; uniformly dividing the projection line segment into multiple sub-line segments; and taking the midpoint of each sub-line segment as a quasi-incident point.

[0011] In some embodiments, the surface mesh includes planes and / or curved surfaces, and wherein uniformly generating multiple incident points within the projection surface structure includes: determining a projection plane formed by projection of the planes and / or curved surfaces in the projection surface structure; uniformly dividing the projection plane into multiple sub-rectangles; and taking the center point of each sub-rectangle as a respective incident point.

[0012] In some embodiments, generating the plurality of prospective incident points based on a mesh density of the surface mesh includes generating the plurality of prospective incident points in positive correlation with the density of the mesh.

[0013] In some embodiments, mapping multiple quasi-incident points to the surface grid along the ion incident direction to form multiple incident points located at the surface grid includes: taking each quasi-incident point as an endpoint, constructing an incident line along the ion incident direction, and taking the intersection of the incident line and the surface grid as the incident point.

[0014] In some embodiments, the action further includes: in response to determining that a quasi-incident point in the projection plane corresponds to an incident point of more than two base structures in the surface mesh, eliminating the incident point of a lower base structure among the more than two base structures, wherein the base structure includes line segments and / or planes.

[0015] In a third aspect of the present disclosure, a computer-readable storage medium is provided, on which a computer program is stored, and when the program is executed by a processor, the method according to the first aspect of the present disclosure is implemented.

[0016] It will be understood from the following description that the technical solution of the present disclosure can obtain the correct incident point in a simple manner, thereby significantly improving the calculation efficiency.

[0017] This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the disclosure, nor is it intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic diagram of an example environment in which embodiments of the present disclosure can be implemented is shown; Figure 2 A flow chart showing a method for ion implantation simulation according to some embodiments of the present disclosure is shown; Figure 3 A schematic diagram showing a surface of a semiconductor device according to some embodiments of the present disclosure is shown; Figure 4 A schematic diagram showing a grid unit of a 3D semiconductor device according to some embodiments of the present disclosure; Figure 5 A schematic diagram showing the determination of an incident point of a surface mesh by a projection plane according to some embodiments of the present disclosure; and Figure 6 A block diagram of a computing device capable of implementing various embodiments of the present disclosure is shown.

[0019] In the various drawings, the same or corresponding reference numerals represent the same or corresponding parts. DETAILED DESCRIPTION

[0020] The principles of the present disclosure will be described below with reference to the various exemplary embodiments shown in the accompanying drawings. It should be understood that the description of these embodiments is only to enable those skilled in the art to better understand and further implement the present disclosure, and is not intended to limit the scope of the present disclosure in any way. It should be noted that similar or identical reference numerals may be used in the figures where feasible, and similar or identical reference numerals may represent similar or identical functions. Those skilled in the art will readily recognize from the following description that alternative embodiments of the structures and methods described herein may be adopted without departing from the principles of the present invention described herein.

[0021] As used herein, the term "including" and its variations mean open inclusion, i.e., "including but not limited to". Unless otherwise stated, the term "or" means "and / or". The term "based on" means "based at least in part on". The terms "an example embodiment" and "an embodiment" mean "at least one example embodiment". The term "another embodiment" means "at least one additional embodiment". The terms "first", "second", etc. may refer to different or the same objects.

[0022] Ion implantation is an important process in semiconductor manufacturing and plays a key role in semiconductor manufacturing. Ion implantation simulation is a simulation and analysis technology for this process, which can optimize design, reduce defects, improve efficiency, control costs and accelerate new process development.

[0023] Analytical ion implantation simulation is a fast and efficient method that uses mathematical models and methods to analyze and predict the ion implantation process, which is crucial to the design of semiconductor devices. The acquisition of the incident point is a basic step in ion implantation simulation. The method commonly used in the industry is to divide the device surface into two parts horizontally and vertically until the interval between the incident points is less than a predetermined threshold. This method can obtain the incident point, but more complex processing is required for inclined surfaces, curved surfaces, or more complex surfaces, which usually involves more advanced geometric modeling and calculations to ensure accurate acquisition of the incident point. For example, more advanced geometric processing algorithms, such as adaptive mesh refinement technology, are used to adapt to the shape and inclination of complex surfaces. However, the high computational complexity of these algorithms leads to low efficiency.

[0024] In addition, the solution based on the bisection method of the structure surface to realize the calculation of the incident point needs to distinguish the surface into horizontal and vertical surfaces when dealing with complex surfaces. The processing method for inclined or curved surfaces is not direct and is relatively difficult, especially when facing irregular structures, which is prone to errors in the calculation of the incident point. The convergence rate of the bisection method is only the same as a geometric series with a ratio of 1 / 2, which means that each iteration can only halve the search interval, resulting in more iterations to achieve the required accuracy when searching for the incident point. During the ion implantation process, the ion implantation ray is blocked by some edges in the device structure and cannot reach the bottom layer, resulting in a mask shadowing effect. The shadowing effect will cause deviations in the critical dimension (CD) and translation of the graph. If the shadowing effect is taken into account, it is more difficult to determine which incident points to retain.

[0025] In view of this, the present disclosure provides an improved solution.

[0026] The embodiments of the present disclosure provide an improved method for ion implantation simulation. The method includes: determining a surface grid of a gridded semiconductor device to be implanted with ions; projecting the surface grid in a direction opposite to the ion incident direction to a projection plane above the highest point in the surface grid to form a projection surface structure in the projection plane; generating multiple quasi-incident points in the projection surface structure; and mapping the multiple quasi-incident points to the surface grid respectively along the ion incident direction to form multiple incident points located at the surface grid. Through the scheme of the embodiments of the present disclosure, the correct incident point can be obtained in a simple manner, which significantly improves the calculation efficiency.

[0027] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0028] Figure 1 1 is a schematic diagram of an example environment 100 in which embodiments according to the present disclosure can be implemented. Figure 1 As shown, the example environment 100 includes a computing device 110 and a client 120 .

[0029] In some embodiments, the computing device 110 may interact with the client 120. For example, the computing device 110 may receive an input message from the client 120 and output a feedback message to the client 120. In some embodiments, the input message from the client 120 may be data related to the semiconductor device. The computing device 110 may perform corresponding mathematical operations on the data related to the semiconductor device and output the corresponding operation results to the client 120.

[0030] In some embodiments, computing device 110 may include, but is not limited to, a personal computer, a server computer, a handheld or laptop device, a mobile device (such as a mobile phone, a personal digital assistant (PDA), a media player, etc.), consumer electronics, a minicomputer, a mainframe computer, cloud computing resources, etc.

[0031] It should be understood that the structure and function of the example environment 100 are described for exemplary purposes only and are not intended to limit the scope of the subject matter described herein. The subject matter described herein can be implemented in different structures and / or functions. The environment is merely illustrative and is not intended to limit the application environment of the embodiments of the present disclosure.

[0032] In order to explain the principle of the disclosed solution more clearly, the following will refer to Figure 2 Let's describe it in more detail.

[0033] Figure 2 A flow chart of a method 200 for ion implantation simulation according to some embodiments of the present disclosure is shown.

[0034] At box 202, the surface grid of the gridded semiconductor device to be ion implanted is determined. The simulated semiconductor device is called a simulation structure. In the simulation software, the semiconductor device is gridded, so it can be said that the simulation structure is composed of grids. According to the different properties of the grid, it can be divided into internal grids and surface grids. The outer surface of the simulation structure is the surface grid. To implement ion implantation simulation, it is necessary to first obtain the surface grid of the simulation structure, that is, the surface area to be ion implanted. For a two-dimensional structure, the surface grid is a series of line segments and curves. For a three-dimensional structure, the surface grid is a series of planes or curved surfaces. Strictly speaking, the surface grid of a two-dimensional structure is composed of a series of line segments, which are connected end to end, and even a curve is composed of a series of short line segments connected end to end. Therefore, the projection surface of a two-dimensional structure is always a straight line, and the projection surface of a three-dimensional structure is always a plane.

[0035] See also Figure 3 , Figure 3 A schematic diagram of the surface of a semiconductor device according to some embodiments of the present disclosure is shown. The figure is a front view of a three-dimensional semiconductor device 302 (it can also be regarded as a front view of a two-dimensional device). The area represented by 304 on the upper part of the semiconductor device 302 (two top surface parts and the right side surface connecting the two top surface parts) is a surface grid to be ion implanted.

[0036] See also Figure 4 , Figure 4 A schematic diagram of a surface mesh of a 3D semiconductor device 402 according to some embodiments of the present disclosure is shown. The surface mesh shown in the figure is a mesh in a common simulation body structure.

[0037] The concepts of two-dimensional and three-dimensional mentioned here are the dimensions of the structure constructed during process simulation based on computer-aided design (Technology Computer-Aided Design, referred to as TCAD) software. TCAD simulation software can simulate one-dimensional to three-dimensional semiconductor process flows. Commonly used two-dimensional simulation refers to the simulation structure that only has two dimensions, X and Y, and is often used in planar device simulation, because planar devices are uniform in the vertical direction of the plane formed by X and Y. The use of two-dimensional simulation not only does not lose simulation accuracy, but also improves simulation efficiency. Three-dimensional structure refers to the TCAD simulation structure with three dimensions, X, Y, and Z, which is consistent with the actual wafer structure and is often used to simulate, for example, three-dimensional devices such as Fin Field-Effect Transistor (FinFET).

[0038] Usually, planar devices above 28 nm can be simulated using 2D due to their structural symmetry, while 14 nm FinFET devices and 7 nm Gate All Around (GAA) devices usually use 3D simulation.

[0039] The data structures of the grid can be stored in the simulation software, and the relevant data structures can be called during simulation to implement the simulation of the semiconductor device.

[0040] In some embodiments, the surface mesh may be obtained by a method commonly used in the industry, which will not be described in detail.

[0041] In the computer-aided design (Technology Computer-Aided Design, TCAD) simulation, there is air material above the structure. To this end, in some embodiments, the surface mesh can be obtained by traversing the properties of all meshes in the structure. Specifically, in some embodiments, the mesh occupied by both air material and any other material is determined as the surface mesh. In other words, the properties of all meshes of the gridded semiconductor device are traversed, and the mesh containing both air and other materials in the properties is determined as the surface mesh.

[0042] In some embodiments, the surface mesh can be obtained by a normal vector calculation method. Specifically, the boundary of the surface and its normal vector are calculated, and the surface boundary refers to the boundary of the surface exposed above, which is also the exposed surface above the simulation structure; the angle between the normal vector and the incident direction is calculated, and if the angle is greater than or equal to 90 degrees, this boundary is a surface mesh.

[0043] At block 204, the surface grid is projected to a projection plane above the highest point in the surface grid in a direction opposite to the ion incident direction to form a projection surface structure in the projection plane. Typically, the exposed surface of the simulated structure faces upward and ion implantation is performed from above. The projection plane only needs to be located above the highest point of the original simulated structure, and any height is equivalent.

[0044] See below Figure 5 , Figure 5 A schematic diagram of determining the incident point of a surface mesh through a projection plane according to some embodiments of the present disclosure is shown. Specifically, Figure 5 It illustrates how the surface mesh corresponds to the projection plane according to the direction of the incident ray and how the position of the quasi-incident point is obtained, while also showing the shadow effect.

[0045] Figure 5 The basic structure of the surface mesh part of the upper part of the semiconductor device 502, that is, some line segments of the upper part are projected onto the upper projection plane (not shown in the figure). The line segments surrounded by each ellipse 504 are the surface mesh corresponding to the two-dimensional structure. The surface mesh is projected to a projection plane above the highest point in the surface mesh in the direction opposite to the ion incident direction to form a projection surface structure in the projection plane, that is, the structure where each point indicated by 510 is located. The projection surface structure is located in the projection plane. Figure 5 The surface mesh corresponding to a two-dimensional structure is used as an example to illustrate. The surface mesh of a three-dimensional structure can be processed in the same way.

[0046] In some embodiments, the horizontal plane corresponding to the highest point of the surface grid is taken as the projection plane, the surface grid is projected onto the projection plane along the incident direction, and the corresponding positions are associated. The association can be achieved by recording the grid positions on the projection plane corresponding to the positions on the structure surface.

[0047] Back to Figure 2 At block 206, a plurality of incident points are generated within the projection surface structure.

[0048] In some embodiments, the surface of the structure can be projected onto a projection plane to form a continuous line segment or a continuous plane without holes, the endpoints of the line segment or the boundary of the plane are found, and the line segment formed by the endpoints or the plane formed by the boundary is called the projection surface structure.

[0049] In some embodiments, a plurality of incident points may be uniformly generated within the projection surface structure.

[0050] In some embodiments, a corresponding plurality of incident points may be generated based on a mesh density of the surface mesh.

[0051] In some embodiments, the projection surface structure is evenly divided into a series of sub-segments or sub-rectangles, and the center point of each sub-segment or sub-rectangle is taken as a quasi-incident point. In this way, a set of quasi-incident points is constructed. It should be understood that the embodiments of the present disclosure are not limited to this. For example, in some embodiments, the center point may not be taken as the quasi-incident point. Obviously, taking the center point is the simplest and most efficient processing method.

[0052] See again Figure 5 , Figure 5 The quasi-incident point in is represented by 512. As mentioned above, each quasi-incident point may be a center point of a sub-line segment or a sub-rectangle.

[0053] In some embodiments, generating a plurality of quasi-incident points based on the grid density of the surface grid may include: generating a plurality of quasi-incident points in a positive correlation with the density of the grid. Positive correlation means that two variables change in the same direction, and when one variable changes from large to small or from small to large, the other variable also changes from large to small or from small to large. For this embodiment, the greater the density of the grid, the greater the number of quasi-incident points. Directly proportional is a special positive correlation.

[0054] In some embodiments, the surface mesh includes line segments, and wherein uniformly generating multiple quasi-incident points within the projection surface structure may include: determining a projection line segment formed by projection of the line segment in the projection surface structure; uniformly dividing the projection line segment into multiple sub-line segments; and taking the center point of each sub-line segment as a quasi-incident point.

[0055] In some embodiments, the surface mesh includes planes and / or curved surfaces, and multiple quasi-incident points can be uniformly generated in the projection surface structure in the following manner: determine a projection plane formed by the projection of the planes and / or curved surfaces in the projection surface structure; evenly divide the projection plane into multiple sub-rectangles; and use the center point of each sub-rectangle as a quasi-incident point.

[0056] The uniformity of the rays can be ensured by placing the quasi-incident point in the middle of each divided area (on a line segment or sub-plane). In principle, it can be placed at any position, but the relative positions of the line segments must remain unchanged. Relatively speaking, selecting the center is the simplest and most direct method.

[0057] At block 208 , a plurality of incident points are respectively mapped to the surface grid along the ion incident direction to form a plurality of incident points located at the surface grid.

[0058] In some embodiments, the quasi-incident points of the projection plane may be mapped one by one to the surface mesh to form a set of incident points located on the surface of the structure. Specifically, in some embodiments, each quasi-incident point is used as an endpoint, an incident ray is constructed along the incident direction, and the intersection of the incident ray and the surface mesh is used as the incident point.

[0059] See again Figure 5 , the incident ray 514 points from the quasi-incident point to the surface grid, and each point represented by 506 on the surface grid is the incident point. The part circled by the dotted ellipse 516 and the points circled by the ellipse 504 whose major axis extends longitudinally and intersects with the dotted ellipse 516 represent points related to the shadow effect. The quasi-incident points corresponding to these points on the projection plane are circled by the ellipse 508 above. The points related to the shadow effect indicate that the corresponding points in the projection plane are blocked by other parts and can be eliminated. After elimination, there is no need to set the incident point, because in practice the incident ions cannot be incident to the corresponding positions of the surface grid, and it is consistent with the actual situation that these positions do not set the incident point. Therefore, in some embodiments, if the quasi-incident point of a projection plane corresponds to the incident point of two basic structure surfaces, considering the shadow effect, the incident point below is eliminated. For example, if the quasi-incident point of a projection plane corresponds to the incident point of more than two basic structure surfaces, all the incident points below are eliminated and only the top point is retained. In other words, when it is determined that a quasi-incident point in the projection plane corresponds to the incident point of more than two basic structures in the surface mesh, the incident point of the lower basic structure among the more than two basic structures is eliminated, where in some embodiments, the basic structure refers to a line segment and / or a plane.

[0060] In some embodiments, multiple quasi-incident points are respectively mapped to the surface grid along the ion incident direction to form multiple incident points located at the surface grid. This can be achieved in the following way: taking each quasi-incident point as an endpoint, an incident line is constructed along the ion incident direction, and the intersection of the incident line and the surface grid is the incident point.

[0061] As mentioned earlier, the surface of the structure is projected onto the projection plane along the incident direction, and the corresponding positions are associated. The so-called association means that the projection plane is associated with the surface mesh, and the incident point is set on the projection plane. The calculation of the incident ray distribution is performed on the simulation structure. The starting point of the incident ray in the simulation structure is the point in the corresponding surface mesh, and the specific position is determined by the corresponding relationship. The specific position refers to the distribution of the incident ray in the simulation structure, and these distributions are determined by the incident point on the surface of the structure. By projecting the structure surface (surface mesh), setting the incident point on the projection surface, and then mapping it back to the surface mesh, the distribution of the incident ray in the simulation structure is determined. The analytical ion implantation simulation is essentially to calculate the incident ray passing through the simulation structure.

[0062] In some embodiments of the present disclosure, after obtaining the surface mesh, the surface mesh is projected onto a projection plane; a series of quasi-incident points are generated on the projection plane. The quasi-incident points are then mapped back to the surface mesh. This is done at least for the following considerations: for example, for irregular surfaces (such as circular surfaces or other curved surfaces), it is difficult to directly divide or set incident points on them, but after being projected onto a plane, it is easy to generate quasi-incident points uniformly or unevenly for the plane. The quasi-incident points are then projected back onto the surface mesh to generate incident points on the surface mesh. This solution takes advantage of the fact that it is easy to process on the projection plane. In addition, the projection direction is along the ion incident direction, which ensures that it is consistent with the actual ion incidence.

[0063] Some embodiments of the present disclosure provide methods for ion implantation simulation. It should be noted that the examples given in the above embodiments are only for illustrating the solutions of the embodiments of the present disclosure, and are not intended to limit the solutions of the present disclosure.

[0064] It should be understood that the embodiments shown in the drawings are only for schematically illustrating the solutions of some embodiments of the present disclosure and are not intended to limit the present disclosure. The embodiments of the present disclosure may also have various other forms.

[0065] An electronic device is also disclosed in an embodiment of the present disclosure. The electronic device includes: a processor; and a memory coupled to the processor, the memory having instructions stored therein, and the instructions, when executed by the processor, cause the device to perform actions, the actions including: determining a surface grid of a gridded semiconductor device to be ion-implanted; projecting the surface grid in a direction opposite to the ion incident direction to a projection plane above the highest point in the surface grid to form a projection surface structure in the projection plane; generating multiple quasi-incident points in the projection surface structure; and mapping the multiple quasi-incident points to the surface grid respectively along the ion incident direction to form multiple incident points located at the surface grid.

[0066] In the embodiment of the present disclosure, a projection method is used to uniformly transform the complex structure surface into a plane, so the calculation of the incident point becomes simpler and more efficient, and the curved surface or inclined surface is very conveniently processed, while the shadow effect can be accurately processed.

[0067] An embodiment of the present disclosure further discloses a computer-readable storage medium on which a computer program is stored. When the program is executed by a processor, the method for ion implantation simulation according to the embodiment of the present disclosure is implemented.

[0068] In some embodiments of the present disclosure, the grid is evenly divided directly on the projection plane, which can save the iteration process and greatly improve the efficiency.

[0069] The present disclosure implements a relatively concise and efficient calculation scheme for incident point acquisition, and the scheme can be applied to two-dimensional or three-dimensional structures of any complexity.

[0070] Some embodiments of the present disclosure disclose a solution for projecting the surface of the simulated structure onto a plane for processing to obtain an incident point. The solution of the embodiments of the present disclosure not only bypasses the complex and changeable surface structure processing, but also obtains the correct incident point by only processing data on a simple projection plane, and has a higher computational efficiency than the traditional method with the same accuracy, and can simply process shadow effects.

[0071] Figure 6 A schematic block diagram of an electronic device according to some exemplary embodiments of the present disclosure is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present disclosure described and / or required herein.

[0072] like Figure 6 As shown, the device 600 includes a CPU 601, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 602 or a computer program loaded from a storage unit 608 into a random access memory (RAM) 603. In the RAM 603, various programs and data required for the operation of the device 600 can also be stored. The CPU 601, the ROM 602, and the RAM 603 are connected to each other via a bus 604. An input / output (I / O) interface 605 is also connected to the bus 604.

[0073] Multiple components in the device 600 are connected to the I / O interface 605, including: an input unit 606, such as a keyboard, a mouse, etc.; an output unit 607, such as various types of displays, speakers, etc.; a storage unit 608, such as a disk, an optical disk, etc.; and a communication unit 609, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 609 allows the device 600 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0074] The various processes and processing described above, such as method 200, can be executed by CPU 601. For example, in some embodiments, method 200 can be implemented as a computer software program, which is tangibly contained in a machine-readable medium, such as storage unit 608. In some embodiments, part or all of the computer program can be loaded and / or installed on device 600 via ROM 602 and / or communication unit 609. When the computer program is loaded into RAM 603 and executed by CPU 601, one or more steps in method 200 described above can be performed.

[0075] The scheme according to the embodiment of the present disclosure may be a method, an apparatus, a system and / or a computer program product. The computer program product may include a computer-readable storage medium on which computer-readable program instructions for executing various aspects of the present disclosure are loaded. The computer-readable storage medium may be a tangible device that can hold and store instructions used by an instruction execution device. The computer-readable program instructions may be downloaded from the computer-readable storage medium to various computing / processing devices, or downloaded to an external computer or external storage device via a network, such as the Internet, a local area network, a wide area network and / or a wireless network.

[0076] Various embodiments of the present disclosure have been described above, and the above descriptions are exemplary and are only optional embodiments of the present disclosure, not exhaustive, and are not intended to limit the present disclosure. Although the claims in this application have been formulated for specific combinations of features, it should be understood that the scope of the present disclosure also includes any novel features or any novel combination of features disclosed herein, whether or not it relates to the same scheme in any claim currently claimed for protection. The applicant hereby informs that new claims may be formulated into these features and / or combinations of these features during the examination of this application or in any further application derived therefrom.

[0077] The terms used in this article are selected to best explain the principles of each embodiment, practical application or technical improvement in the market, or to enable other ordinary technicians in the field to understand the embodiments disclosed herein. For those skilled in the art, the present disclosure may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A method for ion implantation simulation, comprising: Determining a surface grid of a gridded semiconductor device to be ion implanted; Projecting the surface grid along the reverse direction of the ion incident direction to a projection plane above the highest point in the surface grid to form a projection surface structure in the projection plane; generating a plurality of incident points within the projection surface structure; as well as The plurality of incident points are respectively mapped to the surface grid along the ion incident direction to form a plurality of incident points located at the surface grid.

2. The method according to claim 1, wherein determining the surface grid of the gridded semiconductor device to be ion implanted comprises: The properties of all grids of the gridded semiconductor device are traversed, and the grids whose properties contain both air and other materials are determined as the surface grids.

3. The method of claim 1, wherein generating a plurality of incident points within the projection surface structure comprises: uniformly generating a plurality of incident points within the projection surface structure; or A plurality of incident points is generated based on a mesh density of the surface mesh.

4. The method of claim 3, wherein the surface mesh comprises line segments, and wherein uniformly generating a plurality of incident points within the projection surface structure comprises: Determine a projection line segment formed by projection of the line segment in the projection surface structure; Evenly dividing the projected line segment into a plurality of sub-line segments; as well as The midpoint of each of the sub-line segments is taken as a quasi-incident point.

5. The method of claim 3, wherein the surface mesh comprises a plane and / or a curved surface, and wherein uniformly generating a plurality of incident points within the projection surface structure comprises: Determine a projection plane formed by projection of the plane and / or curved surface in the projection surface structure; Evenly dividing the projection plane into a plurality of sub-rectangles; as well as The center point of each sub-rectangle is taken as a quasi-incident point.

6. The method according to claim 3, wherein generating a plurality of prospective incident points based on a mesh density of the surface mesh comprises: The plurality of incident points are generated in direct correlation with the grid density.

7. The method according to claim 1, wherein mapping the plurality of quasi-incident points to the surface grid along the ion incident direction to form a plurality of incident points located at the surface grid comprises: Taking each of the quasi-incident points as an endpoint, an incident ray is constructed along the ion incident direction, and the intersection of the incident ray and the surface grid is taken as the incident point.

8. The method according to claim 1, further comprising: In response to determining that one of the quasi-incident points in the projection plane corresponds to an incident point of two or more base structures in the surface mesh, the incident point of a lower base structure among the two or more base structures is eliminated, wherein the base structure includes line segments and / or planes.

9. An electronic device, comprising: processor; as well as A memory coupled to the processor, the memory having instructions stored therein, the instructions causing the device to perform actions when executed by the processor, the actions comprising: Determining a surface grid of a gridded semiconductor device to be ion implanted; Projecting the surface grid along the reverse direction of the ion incident direction to a projection plane above the highest point in the surface grid to form a projection surface structure in the projection plane; generating a plurality of incident points within the projection surface structure; and The plurality of incident points are respectively mapped to the surface grid along the ion incident direction to form a plurality of incident points located at the surface grid.

10. A computer-readable storage medium having machine-executable instructions stored thereon, which, when executed by a processor, enables the processor to implement the method according to any one of claims 1 to 8.

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