Acoustic wave device and manufacturing method thereof

Abstract

The embodiment of the invention discloses an acoustic wave device and a manufacturing method thereof. The acoustic wave device is provided with a resonance area and a non-resonance area. The acoustic wave device comprises a piezoelectric structure and a heat dissipation structure, the piezoelectric structure is located in a resonance area and a non-resonance area, and the heat dissipation structure is located in the non-resonance area; the heat dissipation structure comprises a first heat dissipation layer, and the first heat dissipation layer is located in the piezoelectric structure of the non-resonance area.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of acoustic wave devices, and in particular, to an acoustic wave device and a method for manufacturing the same. Background Art

[0002] In widely used communication devices such as mobile phones, acoustic wave devices using acoustic waves are usually included as filters of the communication devices. Examples of acoustic wave devices include surface acoustic wave (SAW) devices and bulk acoustic wave (BAW) devices. The performance of the acoustic wave device will affect the communication effect of the communication device.

[0003] With the development of communication technology, acoustic wave devices are facing huge challenges. Among them, power tolerance is used to measure the ability of acoustic wave devices to withstand high power. If acoustic wave devices want to develop to high frequencies, their power tolerance must be improved. Therefore, how to improve the power tolerance of acoustic wave devices has become a technical problem that needs to be solved urgently. Summary of the invention

[0004] According to a first aspect of an embodiment of the present disclosure, there is provided an acoustic wave device, which has a resonant zone and a non-resonant zone; the acoustic wave device comprises: a piezoelectric structure and a heat dissipation structure, the piezoelectric structure is located in the resonant zone and the non-resonant zone, and the heat dissipation structure is located in the non-resonant zone; wherein the heat dissipation structure comprises a first heat dissipation layer, and the first heat dissipation layer is located in the piezoelectric structure in the non-resonant zone.

[0005] In some embodiments, the heat dissipation structure further includes: a second heat dissipation layer, which is located on a first side of the piezoelectric structure in the non-resonance zone; wherein the first side is a side of the piezoelectric structure relatively close to the substrate, and the piezoelectric structure and the substrate are stacked.

[0006] In some embodiments, the heat dissipation structure further includes: a third heat dissipation layer, the third heat dissipation layer is located on a second side of the piezoelectric structure in the non-resonance region; wherein the second side is a side of the piezoelectric structure relatively far away from the substrate.

[0007] In some embodiments, the piezoelectric structure located in the non-resonance region has a groove on a surface relatively far from the substrate; wherein the third heat dissipation layer extends into the groove.

[0008] In some embodiments, the thickness of the third heat dissipation layer is greater than or equal to 100 nanometers and less than or equal to 2200 nanometers, and the thickness of the piezoelectric structure between the substrate and the third heat dissipation layer is greater than or equal to 100 nanometers.

[0009] In some embodiments, a cavity is provided between the second heat dissipation layer and the substrate; or a sacrificial structure is provided between the second heat dissipation layer and the substrate; or the second heat dissipation layer is in contact with the substrate.

[0010] In some embodiments, the thickness of the first heat dissipation layer is greater than or equal to 100 nanometers, and the difference in thickness between the piezoelectric structure and the first heat dissipation layer is greater than or equal to 100 nanometers; the thickness of the second heat dissipation layer is greater than or equal to 100 nanometers, and the difference in thickness between the piezoelectric structure and the second heat dissipation layer is greater than or equal to 100 nanometers.

[0011] In some embodiments, the acoustic wave device further includes a frequency trimming layer covering the piezoelectric structure; the heat dissipation structure further includes: a fourth heat dissipation layer, the fourth heat dissipation layer is located in the non-resonance region and on a side of the frequency trimming layer relatively far from the piezoelectric structure.

[0012] In some embodiments, the acoustic wave device further includes: a reflective structure and a sacrificial structure, wherein the reflective structure is located in the resonant zone and the non-resonant zone and on the first side of the piezoelectric structure, and the sacrificial structure is located in the non-resonant zone and on the first side of the piezoelectric structure; wherein the sacrificial structure and the reflective structure have the same height, and the sacrificial structure does not contact the reflective structure.

[0013] In some embodiments, a thickness of the heat dissipation structure relatively close to the resonance region is greater than a thickness of the heat dissipation structure relatively far from the resonance region.

[0014] In some embodiments, the heat dissipation structure contacts the piezoelectric structure; wherein the contact surface between the heat dissipation structure and the piezoelectric structure has a depression and / or a protrusion.

[0015] In some embodiments, the contact surface is serrated.

[0016] In some embodiments, the heat dissipation structure includes a first part relatively close to the resonance zone and a second part relatively far away from the resonance zone; wherein the thermal conductivity of the first part is greater than or equal to the thermal conductivity of the second part; and the heat capacity of the second part is greater than or equal to the heat capacity of the first part.

[0017] In some embodiments, the distance between the heat dissipation structure and the resonance region is greater than 0 and less than or equal to 35 micrometers.

[0018] In some embodiments, the frequency band of the acoustic wave device is 0 to 3 GHz, and the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the acoustic wave device is greater than 0 and less than or equal to 0.4; or, the frequency band of the acoustic wave device is greater than 3 GHz, and the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the acoustic wave device is greater than 0 and less than or equal to 0.5.

[0019] In some embodiments, a ratio of an orthographic projection area of ​​the heat dissipation structure to an orthographic projection area of ​​the resonance region is greater than 0 and less than or equal to 20.

[0020] In some embodiments, the material of the heat dissipation structure includes at least one of aluminum, titanium, copper, gold, silver, molybdenum, tungsten, zinc, platinum, tin, lead, silicon carbide, diamond, aluminum alloy, and steel.

[0021] According to a second aspect of an embodiment of the present disclosure, a method for manufacturing an acoustic wave device is provided, wherein the acoustic wave device has a resonant region and a non-resonant region; the manufacturing method comprises: forming a piezoelectric structure in the resonant region and the non-resonant region; forming a heat dissipation structure in the non-resonant region; wherein the heat dissipation structure comprises a first heat dissipation layer, and the first heat dissipation layer is located within the piezoelectric structure in the non-resonant region.

[0022] In some embodiments, forming a heat dissipation structure in the non-resonance zone includes: forming a second heat dissipation layer on one side of the substrate, the second heat dissipation layer is located in the non-resonance zone; wherein the substrate is located in the resonance zone and the non-resonance zone; forming a piezoelectric structure in the resonance zone and the non-resonance zone includes: forming the piezoelectric structure covering the second heat dissipation layer and the substrate.

[0023] In some embodiments, the forming of the piezoelectric structure in the resonant zone and the non-resonant zone includes: forming the piezoelectric structure covering a substrate; wherein the substrate is located in the resonant zone and the non-resonant zone; the forming of the heat dissipation structure in the non-resonant zone also includes: forming a third heat dissipation layer on a side of the piezoelectric structure relatively far away from the substrate, and the third heat dissipation layer is located in the non-resonant zone.

[0024] In some embodiments, the manufacturing method also includes: forming an initial piezoelectric structure covering the substrate; forming a third heat dissipation layer on a side of the piezoelectric structure relatively away from the substrate, including: etching the initial piezoelectric structure in the non-resonant area to form a groove in the non-resonant area; wherein the depth of the groove is less than the thickness of the initial piezoelectric structure; the retained initial piezoelectric structure constitutes the piezoelectric structure; and filling the groove with heat dissipation material to form the third heat dissipation layer.

[0025] In some embodiments, the manufacturing method also includes: forming a frequency correction layer covering the piezoelectric structure; forming a heat dissipation structure in the non-resonant area, and also includes: forming a fourth heat dissipation layer on a side of the frequency correction layer relatively away from the piezoelectric structure, and the fourth heat dissipation layer is located in the non-resonant area.

[0026] In some embodiments, the manufacturing method also includes: forming a reflective structure and a sacrificial structure on one side of the substrate, the reflective structure is located in the resonant zone and the non-resonant zone, and the sacrificial structure is located in the non-resonant zone; wherein the sacrificial structure and the reflective structure have the same height; forming a piezoelectric structure in the resonant zone and the non-resonant zone includes: forming the piezoelectric structure covering the reflective structure and the sacrificial structure.

[0027] In some embodiments, forming a reflective structure and a sacrificial structure on one side of the substrate includes: forming a plurality of initial sacrificial structures on one side of the substrate; removing the initial sacrificial structures located in both the resonant zone and the non-resonant zone to form the reflective structure; wherein the initial sacrificial structures located only in the non-resonant zone constitute the sacrificial structure.

[0028] In some embodiments, the forming of the piezoelectric structure in the resonant zone and the non-resonant zone includes: forming a first piezoelectric layer in the resonant zone and the non-resonant zone; forming a second piezoelectric layer covering the first piezoelectric layer; the forming of the heat dissipation structure in the non-resonant zone includes: before forming the second piezoelectric layer, etching the first piezoelectric layer in the non-resonant zone to form a groove in the non-resonant zone; wherein the depth of the groove is less than the thickness of the first piezoelectric layer; the second piezoelectric layer and the retained first piezoelectric layer constitute the piezoelectric structure; and filling the groove with heat dissipation material to form the first heat dissipation layer.

[0029] In the disclosed embodiment, the acoustic wave device has a resonant region and a non-resonant region; the acoustic wave device includes: a piezoelectric structure and a heat dissipation structure, the piezoelectric structure is located in the resonant region and the non-resonant region, and the heat dissipation structure is located in the non-resonant region; the heat dissipation structure includes a first heat dissipation layer, and the first heat dissipation layer is located in the piezoelectric structure in the non-resonant region. The heat dissipation structure can accelerate the heat dissipation of the acoustic wave device, thereby improving the power tolerance of the acoustic wave device. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application.

[0031] Figure 1is a schematic diagram of an acoustic wave device provided by an exemplary embodiment.

[0032] Figure 2 It is a cross-sectional schematic diagram of an acoustic wave device including a first heat dissipation layer provided by an embodiment of the present disclosure.

[0033] Figure 3 It is a cross-sectional schematic diagram of an acoustic wave device including a second heat dissipation layer provided by an embodiment of the present disclosure.

[0034] Figure 4 It is a cross-sectional schematic diagram of an acoustic wave device including a third heat dissipation layer provided by an embodiment of the present disclosure.

[0035] Figure 5 It is a cross-sectional schematic diagram of an acoustic wave device including a fourth heat dissipation layer provided by an embodiment of the present disclosure.

[0036] Figure 6 It is a cross-sectional schematic diagram of an acoustic wave device including a thickness gradient heat dissipation structure provided by an embodiment of the present disclosure.

[0037] Figure 7 It is a top view of an acoustic wave device provided by an embodiment of the present disclosure.

[0038] Figure 8 It is a flow chart of a method for manufacturing an acoustic wave device provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0039] The technical solution of the present disclosure will be further described in detail below in conjunction with the accompanying drawings and embodiments. Although the exemplary implementation methods of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the implementation methods described here. On the contrary, these implementation methods are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0040] The present disclosure is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. The advantages and features of the present disclosure will become more apparent from the following description and claims. It should be noted that the drawings are in very simplified form and in non-precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present disclosure.

[0041] It will be understood that the meaning of “on,” “over,” and “over” of the present disclosure should be interpreted in the broadest manner, so that “on” not only means that it is “on” something with no intervening features or layers (i.e., directly on something), but also includes the meaning that it is “on” something with intervening features or layers.

[0042] In the embodiments of the present disclosure, the terms "first", "second", "third", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.

[0043] In the disclosed embodiments, the term "layer" refers to a material portion including an area having a thickness. A layer may extend over the entirety of a lower or upper structure, or may have an extent less than the extent of a lower or upper structure. In addition, a layer may be an area of ​​a homogeneous or inhomogeneous continuous structure having a thickness less than the thickness of a continuous structure. For example, a layer may be located between the top and bottom surfaces of a continuous structure, or a layer may be between any horizontal faces at the top and bottom surfaces of a continuous structure. A layer may extend horizontally, vertically, and / or along an inclined surface. A layer may include multiple sublayers.

[0044] It should be noted that the technical solutions described in the embodiments of the present disclosure can be arbitrarily combined without conflict.

[0045] Figure 1 is a schematic diagram of an acoustic wave device provided by an exemplary embodiment. Figure 1 As shown in FIG. 1 , when electric energy is applied to the upper and lower electrodes of the acoustic wave device, the piezoelectric layers located in the upper and lower electrodes generate acoustic waves due to the piezoelectric effect. In addition, heat can be transferred from the high temperature area to the low temperature area through the thermal motion between atoms and molecules, for example, the heat in the resonant area is transferred to the non-resonant area, thereby achieving heat dissipation, such as Figure 1 However, Figure 1 The heat dissipation of the acoustic wave devices in the system is slow, and the improvement in the power tolerance of the acoustic wave devices is limited.

[0046] Based on one or more of the above technical problems, an embodiment of the present disclosure provides an acoustic wave device. The acoustic wave device has a resonant region and a non-resonant region; the acoustic wave device includes: a piezoelectric structure and a heat dissipation structure, the piezoelectric structure is located in the resonant region and the non-resonant region, and the heat dissipation structure is located in the non-resonant region; wherein the heat dissipation structure includes a first heat dissipation layer, and the first heat dissipation layer is located in the piezoelectric structure in the non-resonant region. The heat dissipation structure can accelerate the heat dissipation of the acoustic wave device, thereby improving the power tolerance of the acoustic wave device.

[0047] Figure 2 It is a cross-sectional schematic diagram of an acoustic wave device including a first heat dissipation layer provided in an embodiment of the present disclosure, wherein the acoustic wave device includes a SAW device, a BAW device, a Film Bulk Acoustic Resonator (FBAR) device or other acoustic wave devices known in the art.

[0048] Reference Figure 2As shown, the acoustic wave device 100 includes a substrate 101, a first electrode layer 104, a piezoelectric structure 105, a second electrode layer 106 and a heat dissipation structure. It should be noted that in the embodiment of the present disclosure, the area where the first electrode layer 104, the piezoelectric structure 105 and the second electrode layer 106 overlap can be defined as a resonance area 100a, and the area outside the resonance area 100a can be defined as a non-resonance area 100b, that is, the acoustic wave device 100 has a resonance area 100a and a non-resonance area 100b.

[0049] The material of the substrate 101 includes a single semiconductor material (eg, silicon, germanium), a III-V compound semiconductor material, a II-VI compound semiconductor material, an organic semiconductor material, or other semiconductor materials known in the art.

[0050] The first electrode layer 104 may be referred to as a lower electrode or a bottom electrode, and the second electrode layer 106 may be referred to as an upper electrode or a top electrode. Electric energy may be applied to the acoustic wave device 100 through the first electrode layer 104 or the second electrode layer 106. The materials of the first electrode layer 104 and the second electrode layer 106 include at least one of aluminum (Al), molybdenum (Mo), ruthenium (Ru), chromium (Cr), iridium (Ir), or platinum (Pt). The materials of the first electrode layer 104 and the second electrode layer 106 may be the same or different. In one example, the materials of the first electrode layer 104 and the second electrode layer 106 are the same.

[0051] The piezoelectric structure 105 is located in the resonance region 100a and the non-resonance region 100b. The piezoelectric structure 105 can be used to generate vibration according to the inverse piezoelectric characteristic, convert the electrical signal loaded on the first electrode layer 104 and the second electrode layer 106 into an acoustic wave signal, and realize the conversion of electrical energy into mechanical energy. The material of the piezoelectric structure 105 may include: a material with piezoelectric properties, such as aluminum nitride, zinc oxide, lithium tantalate, lead zirconate titanate or barium titanate. The material of the piezoelectric structure 105 may also include a material with piezoelectric properties through doping, which may be a transition metal, a rare metal or a fifth main group element, such as scandium-doped aluminum nitride.

[0052] The heat dissipation structure is located in the non-resonance region 100b, and the heat dissipation structure is used to accelerate the heat generated by the acoustic wave device 100 to the outside. In one example, the heat dissipation structure includes a first heat dissipation layer 1091, and the first heat dissipation layer 1091 is located in the piezoelectric structure 105 of the non-resonance region 100b. In this example, the first heat dissipation layer 1091 is provided in the piezoelectric structure 105 of the non-resonance region 100b, which can accelerate the heat generated by the acoustic wave device 100 to the outside, improve the heat dissipation efficiency of the acoustic wave device 100, and thus improve the power tolerance of the acoustic wave device 100.

[0053] The material of the heat dissipation structure includes at least one of metal, non-metal, high heat capacity and other heat dissipation materials; wherein the metal material includes at least one of aluminum, titanium, copper, gold, silver, molybdenum, tungsten, zinc, platinum, tin or lead; the non-metal material includes at least one of silicon carbide or diamond; the high heat capacity material includes at least one of aluminum alloy or steel. In practical applications, those skilled in the art can reasonably select the material of the heat dissipation structure according to actual needs, and the present disclosure has no special restrictions on this.

[0054] It should be noted that Figure 2 Only the first heat dissipation layer 1091 is shown, however, in other embodiments, the heat dissipation structure may also include other heat dissipation layers. For example, the heat dissipation structure may include at least one of the second heat dissipation layer 1092, the third heat dissipation layer 1093, and the fourth heat dissipation layer 1094 described below.

[0055] In some embodiments, reference Figure 2 As shown, the thickness of the first heat dissipation layer 1091 is greater than or equal to 100 nanometers (nm), and the difference between the thickness of the piezoelectric structure 105 and the first heat dissipation layer 1091 is greater than or equal to 100nm, that is, 100nm≤T1≤H-100nm, T1 represents the thickness of the first heat dissipation layer 1091, and H represents the thickness of the piezoelectric structure 105. For example, the thickness of the first heat dissipation layer 1091 can be 100nm, 110nm, 120nm, 130nm, 140nm or 150nm, etc. Of course, the thickness of the first heat dissipation layer 1091 is not limited to the above examples, and can also be other values, which is not limited by the present disclosure.

[0056] In some embodiments, reference Figure 2 As shown, the acoustic wave device 100 also includes: a reflective structure 102 and a sacrificial structure 103, the reflective structure 102 is located in the resonance zone 100a and the non-resonance zone 100b and is located on the first side of the piezoelectric structure 105, and the sacrificial structure 103 is located in the non-resonance zone 100b and is located on the first side of the piezoelectric structure 105; wherein the sacrificial structure 103 and the reflective structure 102 have the same height, and the sacrificial structure 103 does not contact the reflective structure 102.

[0057] The reflective structure 102 is used to reflect the acoustic wave signal. When the acoustic wave signal generated by the piezoelectric structure 105 propagates toward the reflective structure 102, the acoustic wave signal may be totally reflected at the interface where the first electrode layer 104 and the reflective structure 102 contact, so that the acoustic wave signal is reflected back to the piezoelectric structure 105. Figure 2As shown, both the first electrode layer 104 and the reflective structure 102 may extend into the non-resonance region 100b, and the portion of the reflective structure 102 extending into the non-resonance region 100b may be greater than the portion of the first electrode layer 104 extending into the non-resonance region 100b. In one example, the reflective structure 102 may be a cavity formed between the substrate 101 and the first electrode layer 104. Of course, in other examples, the reflective structure 102 may be a Bragg reflection structure.

[0058] In the process of manufacturing the acoustic wave device 100, a sacrificial material layer is usually formed on the substrate 101. By patterning and etching the sacrificial material layer, a plurality of initial sacrificial structures arranged at intervals can be formed on the substrate 101. The heights of the plurality of initial sacrificial structures are the same. After the preparation of the first electrode layer 104, the piezoelectric structure 105 and the second electrode layer 106 are completed, a hole can be engraved at the edge of the resonance region 100a until the initial sacrificial structure under the first electrode layer 104 is exposed. Then, the exposed initial sacrificial structure is removed by dry method. A cavity can be formed between the substrate 101 and the first electrode layer 104. The cavity can be used as the reflective structure 102, and the initial sacrificial structure located in the non-resonance region 100b can be retained, thereby reducing the complexity of the process. Therefore, the retained initial sacrificial structure is used as the sacrificial structure 103. The heights of the sacrificial structure 103 and the reflective structure 102 are the same, and the sacrificial structure 103 does not contact the reflective structure 102. Of course, in other embodiments, the initial sacrificial structure located in the non-resonance region 100b can also be removed.

[0059] Figure 3 is a cross-sectional schematic diagram of an acoustic wave device including a second heat dissipation layer provided by an embodiment of the present disclosure. It should be noted that: Figure 3 The same reference numerals are used for the same structures in the embodiment shown in the figure as in the above embodiment, and the same structures can be referred to the relevant description of the above embodiment and will not be described in detail. Only the different structures are described in detail in this embodiment. Figure 2 The difference is that Figure 3 The heat dissipation structure shown also includes a second heat dissipation layer. Figure 3 As shown, the heat dissipation structure also includes: a second heat dissipation layer 1092, which is located on the first side of the piezoelectric structure 105 in the non-resonance area 100b; wherein the first side is a side of the piezoelectric structure 105 relatively close to the substrate 101, and the piezoelectric structure 105 and the substrate 101 are stacked.

[0060] Combination Figure 2 and Figure 3As shown, in the embodiment of the present disclosure, the heat dissipation structure may include a first heat dissipation layer 1091 and a second heat dissipation layer 1092, the first heat dissipation layer 1091 is located in the piezoelectric structure 105 of the non-resonance area 100b, the second heat dissipation layer 1092 is located under the piezoelectric structure 105 of the non-resonance area 100b, and the first heat dissipation layer 1091 and the second heat dissipation layer 1092 are isolated by the piezoelectric structure 105 of the non-resonance area 100b. In this way, the first heat dissipation layer 1091 and the second heat dissipation layer 1092 are both arranged in the non-resonance area 100b and constitute a composite heat dissipation structure, which can further accelerate the dissipation of heat, further improve the heat dissipation efficiency of the acoustic wave device 100, and thus further improve the power tolerance of the acoustic wave device 100. Of course, in other embodiments, the heat dissipation structure may only include the second heat dissipation layer 1092.

[0061] The material of the second heat dissipation layer 1092 can be similar to that of the above heat dissipation structure, and will not be described in detail for the sake of brevity. The material of the second heat dissipation layer 1092 can be the same as or different from that of the first heat dissipation layer 1091, and the present disclosure has no special limitation on this.

[0062] In some embodiments, reference Figure 3 As shown, a sacrificial structure 103 is provided between the second heat dissipation layer 1092 and the substrate 101. In this embodiment, the initial sacrificial structure located in the non-resonance region 100b can be retained as the sacrificial structure 103, and the second heat dissipation layer 1092 can be formed on the sacrificial structure 103 in the non-resonance region 100b.

[0063] In other embodiments, a cavity is provided between the second heat dissipation layer 1092 and the substrate 101. In this embodiment, a hole may be made to expose the initial sacrificial structure below the second heat dissipation layer 1092, and then the exposed initial sacrificial structure may be removed by dry method, so that a cavity may be formed between the second heat dissipation layer 1092 and the substrate 101.

[0064] In some other embodiments, the second heat dissipation layer 1092 is in contact with the substrate 101. In this embodiment, the second heat dissipation layer 1092 can be directly formed on the substrate 101, so that the second heat dissipation layer 1092 is in contact with the substrate 101.

[0065] In some embodiments, the thickness of the second heat dissipation layer 1092 is greater than or equal to 100 nm, and the difference between the thickness of the piezoelectric structure 105 and the second heat dissipation layer 1092 is greater than or equal to 100 nm, that is, 100 nm ≤ T2 ≤ H-100 nm, T2 represents the thickness of the second heat dissipation layer 1092, and H represents the thickness of the piezoelectric structure 105. For example, the thickness of the second heat dissipation layer 1092 can be 100 nm, 110 nm, 120 nm, 130 nm, 140 nm, or 150 nm, etc. Of course, the thickness of the second heat dissipation layer 1092 is not limited to the above examples, and can also be other values, which is not limited by the present disclosure.

[0066] Figure 4 is a cross-sectional schematic diagram of an acoustic wave device including a third heat dissipation layer provided by an embodiment of the present disclosure. It should be noted that: Figure 4 The same reference numerals are used for the same structures in the embodiment shown in the figure as in the above embodiment, and the same structures can be referred to the relevant description of the above embodiment and will not be described in detail. Only the different structures are described in detail in this embodiment. Figure 2 or Figure 3 The difference is that Figure 4 The heat dissipation structure shown also includes a third heat dissipation layer. Figure 4 As shown, the heat dissipation structure further includes: a third heat dissipation layer 1093 , which is located at a second side of the piezoelectric structure 105 in the non-resonance region 100 b ; wherein the second side is a side of the piezoelectric structure 105 relatively far from the substrate 101 .

[0067] Combination Figure 2 and Figure 4 As shown, in the embodiment of the present disclosure, the heat dissipation structure may include a first heat dissipation layer 1091 and a third heat dissipation layer 1093. The first heat dissipation layer 1091 is located in the piezoelectric structure 105 of the non-resonance area 100b, and the third heat dissipation layer 1093 is located on the piezoelectric structure 105 of the non-resonance area 100b. The first heat dissipation layer 1091 and the third heat dissipation layer 1093 are isolated by the piezoelectric structure 105 of the non-resonance area 100b. In this way, the first heat dissipation layer 1091 and the third heat dissipation layer 1093 are both arranged in the non-resonance area 100b and constitute a composite heat dissipation structure, which can further accelerate the dissipation of heat, further improve the heat dissipation efficiency of the acoustic wave device 100, and thus further enhance the power tolerance of the acoustic wave device 100. Of course, in other embodiments, the heat dissipation structure may include only the third heat dissipation layer 1093; or, the heat dissipation structure may include the first heat dissipation layer 1091, the second heat dissipation layer 1092 and the third heat dissipation layer 1093. For details about the first heat dissipation layer 1091 and the second heat dissipation layer 1092, refer to Figure 2 , Figure 3 Related description.

[0068] It should be noted that, when the heat dissipation structure includes the first heat dissipation layer 1091, the second heat dissipation layer 1092 and the third heat dissipation layer 1093, the first heat dissipation layer 1091, the second heat dissipation layer 1092 and the third heat dissipation layer 1093 are all arranged in the non-resonance area 100b and constitute a composite heat dissipation structure, which can further accelerate the dissipation of heat and further improve the heat dissipation efficiency of the acoustic wave device 100, thereby greatly improving the power tolerance of the acoustic wave device 100.

[0069] The material of the third heat dissipation layer 1093 can be similar to that of the above heat dissipation structure, and will not be described for brevity. The materials of any two of the first heat dissipation layer 1091, the second heat dissipation layer 1092, and the third heat dissipation layer 1093 can be the same or different, and the present disclosure has no special restrictions on this.

[0070] In some embodiments, the surface of the piezoelectric structure 105 located in the non-resonance region 100b relatively far from the substrate 101 has a groove; wherein the third heat dissipation layer 1093 extends into the groove. In the embodiment of the present disclosure, a groove can be formed by etching the surface of the piezoelectric structure 105 in the non-resonance region 100b relatively far from the substrate 101, and a heat dissipation material can be filled into the groove to form a heat dissipation layer. Figure 4 The third heat dissipation layer 1093 is shown.

[0071] In some embodiments, the thickness of the third heat dissipation layer 1093 is greater than or equal to 100 nm and less than or equal to 2200 nm, and the thickness of the piezoelectric structure 105 between the substrate 101 and the third heat dissipation layer 1093 is greater than or equal to 100 nm, that is, 100 nm ≤ T3 ≤ 2200 nm, h ≥ 100 nm, T3 represents the thickness of the third heat dissipation layer 1093, and h represents the thickness of the piezoelectric structure 105 directly below the third heat dissipation layer 1093. For example, the thickness of the third heat dissipation layer 1093 can be 100 nm, 200 nm, 500 nm, 1000 nm, 2000 nm or 2200 nm, etc. Of course, the thickness of the third heat dissipation layer 1093 is not limited to the above examples, and can also be other values, which is not limited by the present disclosure.

[0072] It should be noted that when the thickness of the piezoelectric structure 105 is small (for example, less than 100 nanometers), the crystal quality of the piezoelectric structure 105 may deteriorate, affecting the performance of the acoustic wave device 100. In the embodiment of the present disclosure, by setting the thickness of the piezoelectric structure 105 between the substrate 101 and the third heat dissipation layer 1093 to be greater than or equal to 100 nanometers, it can be ensured that the thinner region of the piezoelectric structure 105 also has good crystal quality.

[0073] Figure 5 is a cross-sectional schematic diagram of an acoustic wave device including a fourth heat dissipation layer provided by an embodiment of the present disclosure. It should be noted that: Figure 5 The same reference numerals are used for the same structures in the embodiment shown in the figure as in the above embodiment, and the same structures can be referred to the relevant description of the above embodiment and will not be described in detail. Only the different structures are described in detail in this embodiment. Figure 2 , Figure 3 or Figure 4 The difference is that Figure 5 The heat dissipation structure shown also includes a fourth heat dissipation layer. Figure 5As shown, the acoustic wave device 100 further includes a frequency trimming layer 107 covering the piezoelectric structure 105 ; the heat dissipation structure further includes: a fourth heat dissipation layer 1094 , which is located in the non-resonance region 100 b and on a side of the frequency trimming layer 107 relatively away from the piezoelectric structure 105 .

[0074] Combination Figure 2 and Figure 5 As shown, in the embodiment of the present disclosure, the heat dissipation structure may include a first heat dissipation layer 1091 and a fourth heat dissipation layer 1094, the first heat dissipation layer 1091 is located in the piezoelectric structure 105 of the non-resonance region 100b, the fourth heat dissipation layer 1094 is located on the frequency-correcting layer 107 of the non-resonance region 100b, and the first heat dissipation layer 1091 and the fourth heat dissipation layer 1094 are isolated by the piezoelectric structure 105 of the non-resonance region 100b and the frequency-correcting layer 107. In this way, the first heat dissipation layer 1091 and the fourth heat dissipation layer 1094 are both provided in the non-resonance region 100b and constitute a composite heat dissipation structure, which can further accelerate the dissipation of heat, further improve the heat dissipation efficiency of the acoustic wave device 100, and thus further improve the power tolerance of the acoustic wave device 100. Of course, in other embodiments, the heat dissipation structure may include only the fourth heat dissipation layer 1094; or, the heat dissipation structure may include the first heat dissipation layer 1091, the second heat dissipation layer 1092 and the fourth heat dissipation layer 1094; or, the heat dissipation structure may include the first heat dissipation layer 1091, the second heat dissipation layer 1092, the third heat dissipation layer 1093 and the fourth heat dissipation layer 1094, and the first heat dissipation layer 1091, the second heat dissipation layer 1092 and the third heat dissipation layer 1093 may be referred to respectively. Figure 2 , Figure 3 , Figure 4 Related description.

[0075] The material of the fourth heat dissipation layer 1094 can be similar to that of the above heat dissipation structure, and will not be described in detail for the sake of brevity. The materials of any two of the first heat dissipation layer 1091, the second heat dissipation layer 1092, the third heat dissipation layer 1093, and the fourth heat dissipation layer 1094 can be the same or different, and the present disclosure has no special restrictions on this.

[0076] In some embodiments, reference Figures 2 to 5 As shown, the acoustic wave device 100 further includes a pad 108, which is located in the non-resonance region 100c and connected to the second electrode layer 106. Exemplarily, the non-resonance region 100b and the non-resonance region 100c are respectively located on both sides of the resonance region 100a, the heat dissipation structure is located in the non-resonance region 100b, the pad 108 is located in the non-resonance region 100c, the second electrode layer 106 can extend to the non-resonance region 100c, and the pad 108 extends through the frequency correction layer 107 and contacts the second electrode layer 106. In practical applications, the number of the pads 108 can be one or more, and the pads 108 are used to electrically lead out the first electrode layer 104 and the second electrode layer 106.

[0077] Figure 6 is a cross-sectional schematic diagram of an acoustic wave device including a thickness gradient heat dissipation structure provided by an embodiment of the present disclosure. It should be noted that: Figure 6 The same reference numerals are used for the same structures in the embodiment shown in the figure as in the above embodiment, and the same structures can be referred to the relevant description of the above embodiment and will not be described in detail. Only the different structures are described in detail in this embodiment. Figure 2 , Figure 3 , Figure 4 or Figure 5 The difference is that Figure 6 The heat dissipation structure shown is a thickness gradient structure. Figure 6 As shown, the thickness of the heat dissipation structure 109 relatively close to the resonance region 100a is greater than the thickness of the heat dissipation structure 109 relatively far from the resonance region 100a. In the embodiment of the present disclosure, the heat dissipation structure 109 can be set to a thickness gradient structure. Specifically, the heat dissipation structure 109 close to the resonance region 100a is thicker, and the heat dissipation structure 109 far from the resonance region 100a is thinner, that is, the thickness of the heat dissipation structure 109 relatively close to the resonance region 100a is greater than the thickness of the heat dissipation structure 109 relatively far from the resonance region 100a. In this way, the design of the heat dissipation structure can be optimized to achieve a better heat dissipation effect.

[0078] It should be noted that any one of the first heat dissipation layer 1091, the second heat dissipation layer 1092, the third heat dissipation layer 1093, and the fourth heat dissipation layer 1094 in the above-mentioned embodiment can be designed to be similar. Figure 6 The thickness gradient structure is not particularly limited in the present disclosure.

[0079] In some embodiments, the heat dissipation structure contacts the piezoelectric structure 105 ; wherein the contact surface between the heat dissipation structure and the piezoelectric structure 105 has a depression and / or a protrusion.

[0080] In one example, the contact surface between the heat dissipation structure and the piezoelectric structure 105 has a depression, and the heat dissipation structure may extend into the depression, thereby increasing the contact area between the heat dissipation structure and the piezoelectric structure 105 .

[0081] In another example, the contact surface between the heat dissipation structure and the piezoelectric structure 105 has a protrusion, and the heat dissipation structure can cover the protrusion, thereby increasing the contact area between the heat dissipation structure and the piezoelectric structure 105 .

[0082] In another example, the contact surface between the heat dissipation structure and the piezoelectric structure 105 has depressions and protrusions, and the contact surface between the heat dissipation structure and the piezoelectric structure 105 may be sawtooth-shaped, wavy-shaped, etc., thereby further increasing the contact area between the heat dissipation structure and the piezoelectric structure 105.

[0083] It can be understood that in the above example, by providing the contact surface between the heat dissipation structure and the piezoelectric structure 105 with depressions and / or protrusions, the contact area between the heat dissipation structure and the piezoelectric structure 105 can be increased, which is conducive to accelerating heat dissipation.

[0084] In some embodiments, the heat dissipation structure includes a first part relatively close to the resonance region 100a and a second part relatively far away from the resonance region 100a; wherein the thermal conductivity of the first part is greater than or equal to the thermal conductivity of the second part; and the heat capacity of the second part is greater than or equal to the heat capacity of the first part.

[0085] In the embodiment of the present disclosure, the heat dissipation structure includes a first part relatively close to the resonance zone 100a and a second part relatively far from the resonance zone 100a. The first part and the second part may be made of different materials. For example, the part relatively close to the resonance zone 100a may be made of a material with a higher thermal conductivity, that is, the thermal conductivity of the first part is greater than the thermal conductivity of the second part; the part relatively far from the resonance zone 100a may be made of a material with a higher heat capacity, that is, the heat capacity of the second part is greater than the heat capacity of the first part. Of course, in other embodiments, the first part and the second part may be made of the same material. When the first part and the second part are made of the same material, the thermal conductivity of the first part may be equal to the thermal conductivity of the second part; and the heat capacity of the second part may be equal to the heat capacity of the first part.

[0086] In some embodiments, the distance between the heat dissipation structure and the resonance region 100a is greater than 0 and less than or equal to 35 micrometers (μm). For example, the distance between the heat dissipation structure and the resonance region 100a can be 1 μm, 2 μm, 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm or 35 μm. Of course, the distance between the heat dissipation structure and the resonance region 100a is not limited to the above examples, and can also be any value between 0 and 35 μm (excluding 0), and the present disclosure is not limited to this.

[0087] Heat dissipation structure Figure 3 Taking the second heat dissipation layer 1092 in the example, 0<L≤35μm, L represents the distance between the heat dissipation structure and the resonance area 100a. In one example, 2μm<L≤35μm, that is, the distance between the heat dissipation structure and the resonance area is at least greater than 2μm, so that the overlay redundancy of each layer can be guaranteed.

[0088] Figure 7 1 is a top view of an acoustic wave device provided by an embodiment of the present disclosure. For the sake of easy distinction, the resonant region and the non-resonant region in the acoustic wave device 100 are distinguished by different colors. The number of heat dissipation structures can be one or more, and one or more heat dissipation structures are located in the non-resonant region. In practical applications, the shape of the heat dissipation structure can be designed according to the shape of the non-resonant region. Specifically, Figure 7 The top view of the multiple resonance zones shown in the figure is fan-shaped, and the heat dissipation structure is located in the non-resonance zone between two adjacent sectors. The shape of the heat dissipation structure can be reasonably designed according to the size of the space between the two adjacent sectors. For example, the top view of the heat dissipation structure is rectangular, annular, arc-shaped or other suitable geometric shapes.

[0089] In some embodiments, the frequency band of the acoustic wave device 100 is 0 to 3 GHz, and the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the acoustic wave device 100 is greater than 0 and less than or equal to 0.4. Generally, for an acoustic wave device with a frequency band of 0 to 3 GHz, the area ratio of the resonance region is relatively large, and the area ratio of the corresponding heat dissipation structure can be designed to be less than or equal to 0.4, that is, the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the acoustic wave device 100 is greater than 0 and less than or equal to 0.4. Here, the area ratio of the resonance region can be Figure 7 The ratio of the sum of the orthographic projection areas of all resonant regions to the orthographic projection area of ​​the acoustic wave device.

[0090] In other embodiments, the frequency band of the acoustic wave device 100 is greater than 3 GHz, and the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the acoustic wave device 100 is greater than 0 and less than or equal to 0.5. Generally, for an acoustic wave device with a frequency band greater than 3 GHz, the area ratio of the resonance zone is relatively small, and the area ratio of the corresponding heat dissipation structure can be designed to be less than or equal to 0.5, that is, the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the acoustic wave device 100 is greater than 0 and less than or equal to 0.5. It can be understood that, compared with an acoustic wave device with a frequency band of 0 to 3 GHz, the filling area of ​​the heat dissipation structure can be increased in an acoustic wave device with a frequency band greater than 3 GHz, thereby dissipating heat more effectively.

[0091] In some embodiments, the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the resonance zone is greater than 0 and less than or equal to 20. It should be noted that, in the case where there are multiple heat dissipation structures, the orthographic projection area of ​​the heat dissipation structure may be the sum of the orthographic projection areas of the multiple heat dissipation structures, that is, the sum of the orthographic projection areas of the multiple heat dissipation structures and Figure 7 The ratio of the sum of the orthographic projection areas of all the resonance regions in the heat dissipation structure is greater than 0 and less than or equal to 20. In an example, the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the resonance region is greater than or equal to 2 and less than or equal to 12.

[0092] Based on the above acoustic wave device, an embodiment of the present disclosure provides a method for manufacturing an acoustic wave device, and the manufacturing method can be used to manufacture the acoustic wave device in any of the above embodiments.

[0093] Figure 8 is a flow chart of a method for manufacturing an acoustic wave device provided in an embodiment of the present disclosure. It should be noted that: Figure 8The steps shown in the operation are not exclusive, and other steps may be performed before, after or between any steps in the operation shown; Figure 8 The steps shown in the figure can be adjusted in order according to actual needs. Figure 8 As shown, the production method comprises the following steps:

[0094] S210: forming a piezoelectric structure in the resonance region and the non-resonance region;

[0095] S220: forming a heat dissipation structure in the non-resonance region; wherein the heat dissipation structure includes a first heat dissipation layer, and the first heat dissipation layer is located in the piezoelectric structure in the non-resonance region.

[0096] Exemplarily, the step of forming a piezoelectric structure in the resonance region and the non-resonance region includes: forming a first piezoelectric layer in the resonance region and the non-resonance region; forming a second piezoelectric layer covering the first piezoelectric layer, that is, in this example, the piezoelectric structure can be formed by multiple depositions. Of course, in other examples, the piezoelectric layer can be formed by one deposition.

[0097] Exemplarily, the step of forming a heat dissipation structure in the non-resonance region includes: before forming the second piezoelectric layer, etching the first piezoelectric layer in the non-resonance region to form a groove in the non-resonance region; filling the groove with a heat dissipation material to form a heat dissipation structure as shown in FIG. Figure 2 The first heat dissipation layer 1091 is shown. Here, the depth of the groove is less than the thickness of the first piezoelectric layer, and the second piezoelectric layer and the retained first piezoelectric layer form a piezoelectric structure, so that the first heat dissipation layer can be located in the piezoelectric structure in the non-resonance area.

[0098] In the embodiment of the present disclosure, a heat dissipation structure is formed in the non-resonance region, the heat dissipation structure includes a first heat dissipation layer, and the first heat dissipation layer is located in the piezoelectric structure in the non-resonance region. The heat dissipation structure can accelerate the heat dissipation of the acoustic wave device, thereby improving the power tolerance of the acoustic wave device.

[0099] In some embodiments, the above step S220 includes: forming a second heat dissipation layer on one side of the substrate, the second heat dissipation layer is located in the non-resonance zone; wherein the substrate is located in the resonance zone and the non-resonance zone; the above step S210 includes: forming a piezoelectric structure covering the second heat dissipation layer and the substrate.

[0100] For example, a substrate located in a non-resonant region may be formed as follows: Figure 3 The second heat dissipation layer 1092 is then formed into a piezoelectric structure, which covers Figure 3 The first electrode layer 104 and the second heat dissipation layer 1092 are provided, and the first electrode layer 104 is located between the substrate 101 and the piezoelectric structure.

[0101] In some embodiments, the above step S210 includes: forming a piezoelectric structure covering a substrate; wherein the substrate is located in a resonant region and a non-resonant region; the above step S220 also includes: forming a third heat dissipation layer on a side of the piezoelectric structure relatively far away from the substrate, and the third heat dissipation layer is located in the non-resonant region.

[0102] For example, an initial piezoelectric structure covering the substrate may be formed first, and then the initial piezoelectric structure in the non-resonant region may be etched to form a groove in the non-resonant region; a heat dissipation material may be filled into the groove to form a Figure 4 The third heat dissipation layer 1093 shown in FIG. 1 extends into a groove on the surface of the piezoelectric structure. Here, the depth of the groove is less than the thickness of the initial piezoelectric structure. The initial piezoelectric structure retained is as follows: Figure 4 The piezoelectric structure 105 is shown. Of course, in other examples, a third heat dissipation layer may also be formed directly on the piezoelectric structure in the non-resonance region.

[0103] In some embodiments, the manufacturing method further includes: forming a frequency-correcting layer covering the piezoelectric structure; the step S220 further includes: forming a fourth heat dissipation layer on a side of the frequency-correcting layer relatively away from the piezoelectric structure, wherein the fourth heat dissipation layer is located in a non-resonant region.

[0104] For example, a structure such as Figure 5 A fourth heat dissipation layer 1094 is shown.

[0105] In some embodiments, the above-mentioned manufacturing method also includes: forming a reflective structure and a sacrificial structure on one side of the substrate, the reflective structure is located in the resonant area and the non-resonant area, and the sacrificial structure is located in the non-resonant area; wherein the heights of the sacrificial structure and the reflective structure are the same; the above-mentioned step S210 includes: forming a piezoelectric structure covering the reflective structure and the sacrificial structure.

[0106] Exemplarily, a sacrificial material layer can be formed on a substrate, and a plurality of initial sacrificial structures arranged at intervals can be formed on one side of the substrate by patterned etching of the sacrificial material layer, and the heights of the plurality of initial sacrificial structures are the same. After the preparation of the first electrode layer, the piezoelectric structure, and the second electrode layer is completed, a hole can be etched at the edge of the resonance region until the initial sacrificial structure under the first electrode layer is exposed, and then the exposed initial sacrificial structure is removed by dry method, and a cavity can be formed between the substrate and the first electrode layer, and the cavity can be used as a reflective structure, while the initial sacrificial structure located in the non-resonant region can be retained, thereby reducing the complexity of the process. Therefore, only the initial sacrificial structure located in the non-resonant region and retained is used as a sacrificial structure, and the height of the sacrificial structure and the reflective structure are the same.

[0107] The above description is only a specific implementation mode of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure.

Claims

1. An acoustic wave device, characterized in that: The acoustic wave device has a resonant region and a non-resonant region; the acoustic wave device comprises: A piezoelectric structure, wherein the piezoelectric structure is located in the resonant region and the non-resonant region; A heat dissipation structure, wherein the heat dissipation structure is located in the non-resonance area; wherein the heat dissipation structure comprises a first heat dissipation layer, and the first heat dissipation layer is located in the piezoelectric structure in the non-resonance area.

2. The acoustic wave device according to claim 1, characterized in that The heat dissipation structure further includes: A second heat dissipation layer, wherein the second heat dissipation layer is located at a first side of the piezoelectric structure in the non-resonance region; wherein the first side is a side of the piezoelectric structure relatively close to the substrate, and the piezoelectric structure and the substrate are stacked.

3. The acoustic wave device according to claim 1 or 2, characterized in that: The heat dissipation structure further includes: A third heat dissipation layer, wherein the third heat dissipation layer is located at a second side of the piezoelectric structure in the non-resonance region; wherein the second side is a side of the piezoelectric structure relatively far away from the substrate.

4. The acoustic wave device according to claim 3, characterized in that The piezoelectric structure located in the non-resonance region has a groove on its surface relatively far from the substrate; wherein the third heat dissipation layer extends into the groove.

5. The acoustic wave device according to claim 3, characterized in that: The thickness of the third heat dissipation layer is greater than or equal to 100 nanometers and less than or equal to 2200 nanometers, and the thickness of the piezoelectric structure located between the substrate and the third heat dissipation layer is greater than or equal to 100 nanometers.

6. The acoustic wave device according to claim 2, characterized in that A cavity is provided between the second heat dissipation layer and the substrate; or a sacrificial structure is provided between the second heat dissipation layer and the substrate; or the second heat dissipation layer is in contact with the substrate.

7. The acoustic wave device according to claim 2, characterized in that The thickness of the first heat dissipation layer is greater than or equal to 100 nanometers, and the difference between the thickness of the piezoelectric structure and the first heat dissipation layer is greater than or equal to 100 nanometers; The thickness of the second heat dissipation layer is greater than or equal to 100 nanometers, and the difference between the thickness of the piezoelectric structure and the second heat dissipation layer is greater than or equal to 100 nanometers.

8. The acoustic wave device according to any one of claims 1 to 3, characterized in that: The acoustic wave device further includes a frequency-correcting layer covering the piezoelectric structure; and the heat dissipation structure further includes: A fourth heat dissipation layer is located in the non-resonance region and on a side of the frequency correction layer that is relatively far away from the piezoelectric structure.

9. The acoustic wave device according to claim 1, characterized in that The acoustic wave device also includes: a reflective structure, the reflective structure being located in the resonant region and the non-resonant region and being located on a first side of the piezoelectric structure; A sacrificial structure, wherein the sacrificial structure is located in the non-resonant area and on the first side of the piezoelectric structure; wherein the sacrificial structure and the reflective structure have the same height, and the sacrificial structure is not in contact with the reflective structure.

10. The acoustic wave device according to claim 1, characterized in that The thickness of the heat dissipation structure relatively close to the resonance region is greater than the thickness of the heat dissipation structure relatively far from the resonance region.

11. The acoustic wave device according to claim 1, characterized in that The heat dissipation structure is in contact with the piezoelectric structure; wherein the contact surface between the heat dissipation structure and the piezoelectric structure has a depression and / or a protrusion.

12. The acoustic wave device according to claim 11, characterized in that The contact surface is serrated.

13. The acoustic wave device according to claim 1, characterized in that The heat dissipation structure includes a first part relatively close to the resonance zone and a second part relatively far from the resonance zone; wherein the thermal conductivity of the first part is greater than or equal to the thermal conductivity of the second part; and the heat capacity of the second part is greater than or equal to the heat capacity of the first part.

14. The acoustic wave device according to claim 1, characterized in that The distance between the heat dissipation structure and the resonance region is greater than 0 and less than or equal to 35 micrometers.

15. The acoustic wave device according to claim 1, characterized in that The frequency band of the acoustic wave device is 0 to 3 GHz, and the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the acoustic wave device is greater than 0 and less than or equal to 0.4; or, The frequency band of the acoustic wave device is greater than 3 GHz, and the ratio of the orthographic projection area of ​​the heat dissipation structure to the orthographic projection area of ​​the acoustic wave device is greater than 0 and less than or equal to 0.

5.

16. The acoustic wave device according to claim 1, characterized in that A ratio of an orthographic projection area of ​​the heat dissipation structure to an orthographic projection area of ​​the resonance region is greater than 0 and less than or equal to 20.

17. The acoustic wave device according to claim 1, characterized in that The material of the heat dissipation structure includes at least one of aluminum, titanium, copper, gold, silver, molybdenum, tungsten, zinc, platinum, tin, lead, silicon carbide, diamond, aluminum alloy, and steel.

18. A method for manufacturing an acoustic wave device, characterized in that: The acoustic wave device has a resonant region and a non-resonant region; the manufacturing method comprises: forming a piezoelectric structure in the resonant region and the non-resonant region; A heat dissipation structure is formed in the non-resonance region; wherein the heat dissipation structure comprises a first heat dissipation layer, and the first heat dissipation layer is located in the piezoelectric structure in the non-resonance region.

19. The manufacturing method according to claim 18, characterized in that: The heat dissipation structure is formed in the non-resonance area, comprising: A second heat dissipation layer is formed on one side of the substrate, and the second heat dissipation layer is located in the non-resonance area; wherein the substrate is located in the resonance area and the non-resonance area; The piezoelectric structure is formed in the resonant region and the non-resonant region, comprising: The piezoelectric structure is formed to cover the second heat dissipation layer and the substrate.

20. The production method according to claim 18 or 19, characterized in that: The piezoelectric structure is formed in the resonant region and the non-resonant region, comprising: forming the piezoelectric structure covering a substrate; wherein the substrate is located in the resonant region and the non-resonant region; The heat dissipation structure is formed in the non-resonance area, and further comprises: A third heat dissipation layer is formed on a side of the piezoelectric structure relatively far away from the substrate, and the third heat dissipation layer is located in the non-resonance region.

21. The manufacturing method according to claim 20, characterized in that: The production method further comprises: forming an initial piezoelectric structure covering the substrate; The forming of a third heat dissipation layer on a side of the piezoelectric structure relatively far from the substrate comprises: Etching the initial piezoelectric structure in the non-resonant region to form a groove in the non-resonant region; wherein the depth of the groove is less than the thickness of the initial piezoelectric structure; and the retained initial piezoelectric structure constitutes the piezoelectric structure; Filling the groove with heat dissipation material to form the third heat dissipation layer.

22. The method according to any one of claims 18 to 21, characterized in that: The production method further comprises: forming a frequency repairing layer covering the piezoelectric structure; The heat dissipation structure is formed in the non-resonance area, and further comprises: A fourth heat dissipation layer is formed on a side of the frequency-modifying layer relatively far from the piezoelectric structure, and the fourth heat dissipation layer is located in the non-resonance region.

23. The method according to claim 18, characterized in that: The production method further comprises: A reflective structure and a sacrificial structure are formed on one side of the substrate, wherein the reflective structure is located in the resonant region and the non-resonant region, and the sacrificial structure is located in the non-resonant region; wherein the sacrificial structure and the reflective structure have the same height; The piezoelectric structure is formed in the resonant region and the non-resonant region, comprising: The piezoelectric structure is formed to cover the reflective structure and the sacrificial structure.

24. The method according to claim 23, characterized in that: The forming of a reflective structure and a sacrificial structure on one side of the substrate comprises: forming a plurality of initial sacrificial structures on one side of the substrate; The initial sacrificial structure located in both the resonant region and the non-resonant region is removed to form the reflective structure; wherein the initial sacrificial structure located only in the non-resonant region constitutes the sacrificial structure.

25. The method according to claim 18, characterized in that: The piezoelectric structure is formed in the resonant region and the non-resonant region, comprising: forming a first piezoelectric layer in the resonance region and the non-resonance region; forming a second piezoelectric layer covering the first piezoelectric layer; The heat dissipation structure is formed in the non-resonance area, comprising: Before forming the second piezoelectric layer, etching the first piezoelectric layer in the non-resonance region to form a groove in the non-resonance region; wherein the depth of the groove is less than the thickness of the first piezoelectric layer; The second piezoelectric layer and the retained first piezoelectric layer constitute the piezoelectric structure; Filling the groove with heat dissipation material to form the first heat dissipation layer.

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