Backside deposition for wafer bow management

Abstract

Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool includes a chamber, a susceptor in the chamber, and a first gas feed system on a first side of the susceptor. In an embodiment, a first gas feed system includes a first exhaust line having a first valve for opening and closing the first exhaust line and a first source gas feed line having a second valve for opening and closing the first source gas feed line. In an embodiment, the semiconductor processing tool further includes a second gas feed system on the second side of the susceptor. In an embodiment, the second gas feed system includes a second exhaust line having a third valve for opening and closing the second exhaust line and a second source gas feed line having a fourth valve for opening and closing the second source gas feed line.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. patent application No. 17 / 946,947, filed on September 16, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments relate to the field of semiconductor manufacturing, and in particular, to semiconductor processing tools for depositing films on the backside of a substrate for wafer bow management. Background Art

[0004] In semiconductor processing applications, one or more layers are deposited above the top surface of a substrate. The one or more layers may be subject to stress. The stress in these layers may be transferred into the substrate itself. This stress may cause warping or bowing of the substrate. When the substrate warps or bows, features on the substrate (e.g., pillars, lines, etc.) may shift. For example, depending on the warping, the pillars may tilt toward each other or be spaced apart from each other. In addition, clamping the substrate becomes more difficult.

[0005] Therefore, in some architectures, a stress compensation film may be provided on the back side of the substrate. Ideally, the stress inherent in the stress compensation film is opposite to the stress provided by the layers on top of the substrate. In this way, the bow or warp is compensated to provide a substantially flat substrate for additional processing.

[0006] Providing a backside layer over a substrate is not without problems. In particular, backside deposition processes are unable to produce particles or deposits on the front side of the substrate. In addition, it is generally undesirable to flip the orientation of the substrate (i.e., turn the substrate upside down). Therefore, existing deposition tools are generally not suitable for backside deposition processes. Summary of the invention

[0007] Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool includes a chamber, a susceptor in the chamber, and a first gas feed system on a first side of the susceptor. In an embodiment, the first gas feed system includes a first exhaust line and a first source gas feed line, the first exhaust line having a first valve for opening and closing the first exhaust line, and the first source gas feed line having a second valve for opening and closing the first source gas feed line. In an embodiment, the semiconductor processing tool further includes a second gas feed system located on a second side of the susceptor. In an embodiment, the second gas feed system includes a second exhaust line and a second source gas feed line, the second exhaust line having a third valve for opening and closing the second exhaust line, and the second source gas feed line having a fourth valve for opening and closing the second source gas feed line.

[0008] An embodiment may also include a semiconductor processing tool, comprising: a base; a showerhead above the base, wherein the showerhead comprises a first plate having a first hole and a second plate having a second hole located above the first plate; and lift pins, wherein the lift pins are configured to lift the substrate above the base and the showerhead.

[0009] Embodiments may also include a semiconductor processing tool comprising: a chamber; a pedestal in the chamber, wherein the pedestal is coupled to an RF source; and a plate above the pedestal, wherein the plate is coupled to an electrical ground. In embodiments, the semiconductor processing tool further comprises a gas distribution assembly located between the pedestal and the plate. In embodiments, the gas distribution assembly is configured to supply a process gas to a back side of a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1A is an illustration of a cross-sectional view of a semiconductor processing tool in a first configuration including a pair of gas feed systems according to an embodiment.

[0011] Figure 1B According to the implementation method Figure 1A A cross-sectional view of a semiconductor processing tool in FIG. 1 is shown in FIG. 2 in a second configuration to provide uniform backside film deposition.

[0012] Figure 2 is an illustration of a cross-sectional view of a semiconductor processing tool including a backside showerhead configuration according to an embodiment.

[0013] Figure 3Ais an illustration of a cross-sectional view of a semiconductor processing tool including a backside film deposition architecture according to an embodiment.

[0014] Figure 3B is an illustration of a cross-sectional view of a semiconductor processing tool including a bottom processing kit for backside deposition of a substrate according to an embodiment.

[0015] Figure 3C is an illustration of a cross-sectional view of a semiconductor processing tool including a backside film deposition architecture having a frontside inert gas flow surrounding an overlying ground plate in accordance with an embodiment.

[0016] Figure 4A is a plan view illustration of controlling gas flow into two zones having an inner zone and an outer zone according to an embodiment.

[0017] Figure 4B is a plan view illustration of controlling gas flow into five zones having an inner zone and four outer zones, according to an embodiment.

[0018] Figure 5A is a perspective view illustration of a gas distribution assembly for radial gas distribution according to an embodiment.

[0019] Figure 5B is a cross-sectional view of an open valve for controlling gas distribution in a radial gas distribution assembly according to an embodiment.

[0020] Figure 5C is a cross-sectional view of a shut-off valve for controlling gas distribution in a radial gas distribution assembly.

[0021] Figure 6 is an illustration of a cross-sectional view of a semiconductor processing tool having a pedestal that can be tilted to provide a non-uniform distance to a ground plate in accordance with an embodiment.

[0022] Figure 7 A block diagram illustrates an exemplary computer system that may be used in conjunction with a processing tool according to an embodiment. DETAILED DESCRIPTION

[0023] The systems described herein include semiconductor processing tools for depositing films on the back side of a substrate for wafer bow management. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that the embodiments may be practiced without these specific details. In other cases, in order to avoid unnecessarily obscuring the embodiments, well-known aspects are not described in detail. In addition, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

[0024] As described above, depositing a film on the back side of a substrate can be used to correct a bowed or warped substrate. However, existing processing tools are typically designed to process the top side of a substrate. That is, in order to form a backside film, the substrate needs to be flipped. This can damage the front side of the substrate and is undesirable. Therefore, embodiments disclosed herein include semiconductor processing tools configured to form a plasma below a substrate in order to deposit a backside film. In some embodiments, a process gas flows into a chamber from the side. In other embodiments, a showerhead below the substrate faces the back side of the substrate so that the process gas flows into the chamber.

[0025] Additionally, it should be understood that different types of warpage may require non-uniform backside film deposition. Therefore, embodiments disclosed herein include different methods and architectures to control the flow of process gases, control plasma parameters, or the like. In other embodiments, the architecture may be particularly advantageous for providing uniform film deposition.

[0026] Now refer to Figure 1A , according to an embodiment, a cross-sectional view of a semiconductor processing tool 100 for backside film deposition is illustrated. In an embodiment, the semiconductor processing tool 100 in FIG. 1A is configured to provide uniform backside film deposition. In particular, Figure 1A A first configuration is illustrated in FIG. 1 so that the process gas flows across the substrate 125 in a first direction, and Figure 1B 1A illustrates a second configuration so that the process gas flows in an opposite second direction across the substrate 125. Although a bidirectional gas feed system is illustrated in FIG. 1A , it should be understood that a unidirectional gas feed system may be used if the susceptor 120 is rotatable.

[0027] In an embodiment, the semiconductor processing tool 100 includes a chamber 130. The chamber 130 may be any suitable material configured to support vacuum conditions within the chamber 130. The bottom portion of the chamber 130 is Figure 1A However, additional parts of the chamber (e.g., side walls, parts of a cover, or the like) may also be included.

[0028] In an embodiment, the semiconductor processing tool 100 may further include a first gas feed system 110A and a second gas feed system 110B. In an embodiment, the first gas feed system 110A and the second gas feed system 110B may be substantially similar to each other and disposed on opposite sides of the semiconductor processing tool 100. In an embodiment, the gas feed systems 110A and 110B may include an exhaust line 112 and a process gas feed line 114. In addition, a set of valves may be disposed on each of the gas feed systems 110A and 110B. For example, in the first gas feed system 110A, the first valve 101 may control the gas flow rate into the exhaust line 112, and the second valve 102 may control the gas flow rate from the gas feed line 114 into the chamber 130. Similarly, in the second gas feed system 110B, the third valve 103 may control the gas flow rate into the exhaust line 112, and the fourth valve 104 may control the gas flow rate from the gas feed line 114 into the chamber 130. In an embodiment, each of the gas feed systems 110A and 110B may also include a showerhead 116 for distributing the gas into the chamber 130. In some embodiments, one or both of the showerheads 116 may be omitted.

[0029] In an embodiment, the semiconductor processing chamber 100 may include a pedestal 120. The pedestal 120 may be coupled to an RF source so as to strike a plasma between a substrate 125 and the top of the pedestal 120. The substrate 125 may be lifted from the top of the pedestal 120 by lift pins 122. In some embodiments, the pedestal 120 may be a fixed pedestal 120. In other embodiments, the pedestal 120 may be rotatable. In some cases, rotating the pedestal 120 may further improve film deposition uniformity. In certain cases, including a rotating pedestal 120 may allow the use of a single-sided gas feed system (e.g., a semiconductor processing tool 100 having a single gas feed line 110A) while still enabling uniform film deposition.

[0030] In an embodiment, the substrate 125 can be any type of substrate typically processed in semiconductor manufacturing equipment. In a specific embodiment, the substrate 125 can be a wafer (e.g., a silicon wafer or any other semiconductor wafer). The substrate 125 can have any form factor (e.g., 150 mm, 200 mm, 300 mm, 450 mm, or the like). Other materials and form factors can also be used for the substrate 125 (e.g., a glass substrate, a sapphire substrate, or the like). That is, the substrate 125 can be any substrate that can benefit from including backside film deposition.

[0031] In an embodiment, the deposited backside film can be a film that can induce a high level of stress into the substrate 125. In a specific embodiment, the backside film can include silicon and nitrogen (e.g., silicon nitride). The silicon nitride film can be a high temperature film. For example, the backside film can be deposited at a temperature of 500° C. or higher, or 700° C. or higher. The high temperature can be implemented in part by using a heatable susceptor 120. Alternatively (or in addition to heating the susceptor), a lamp array 142 can be disposed above the substrate 125 to heat the substrate 125.

[0032] In an embodiment, a ground plate 141 may be disposed above the substrate 125. The ground plate 141 may be coupled to an electrical ground so as to enable plasma to be formed in the chamber 130. In some embodiments, the ground plate 141 may also be a showerhead. For example, in some embodiments, an inert process gas may flow into the chamber via the ground plate 141. The ground plate 141 may be relatively close to the top surface of the substrate 125. The minimum spacing between the ground plate 141 and the substrate 125 (and the flow of the inert gas) may help prevent the formation of plasma between the ground plate 141 and the top surface of the substrate 125. For example, the ground plate 141 may be about 10 mm or less, about 5 mm or less, or about 1 mm or less from the top surface of the substrate 125. Preventing the formation of plasma above the substrate 125 allows the top surface of the substrate to remain pristine and undamaged during the backside film deposition process.

[0033] In the embodiment shown in FIG. 1A , a first tool configuration is provided. The first tool configuration enables process gas to flow from the right side of substrate 125 to the left side of substrate 125, as indicated by the arrows. In particular, the first tool configuration includes a first valve 101 being closed and a second valve being opened. This allows process gas to enter the chamber via the first gas feed system 110A. The first tool configuration also includes a third valve 103 being opened and a fourth valve 104 being closed. This allows process gas to be exhausted from chamber 130 via the second gas feed system 110B.

[0034] exist Figure 1A and Figure 1B , the second valve 102 and the fourth valve 104 are illustrated as two separate valves. However, in some embodiments, a single valve may be used to selectively flow the process gas into the first gas feed system 110A or the second gas feed system 110B. In addition, two separate exhaust lines 112 may be provided in the embodiment of the present invention. Figure 1A and Figure 1B That is, a single exhaust system can be used to evacuate chamber 130.

[0035] Now refer to Figure 1B, illustrates a cross-sectional view illustration of a semiconductor processing tool 100 in a second tool configuration according to an embodiment. The second tool configuration can be substantially opposite to the first tool configuration. As such, process gas can flow from the left side of the substrate 125 to the right side of the substrate 125, as indicated by the arrows. In an embodiment, the second tool configuration can include a first valve 101 being opened and a second valve 102 being closed. Additionally, the third valve 103 is closed and the fourth valve 104 is open. As such, process gas can flow from the second gas feed system 110B into the chamber 130, and gas can be exhausted from the chamber 130 through the first gas feed system 110A.

[0036] In an embodiment, the semiconductor processing tool 100 can switch between a first tool configuration and a second tool configuration to uniformly deposit a backside film onto the substrate 125. In a particular embodiment, the semiconductor processing tool 100 can be in the first tool configuration for a first duration, and the semiconductor processing tool 100 can switch to the second tool configuration for a second duration. The first duration and the second duration can be substantially similar to each other. In other embodiments, the semiconductor processing tool 100 can switch back and forth between the first tool configuration and the second tool configuration. In yet another embodiment, the first tool configuration or the second tool configuration can be selected, and the substrate 125 can be rotated. In an embodiment, the rotation can be performed at a constant angular velocity while varying the gas flow rate to produce a uniform backside film or an intentionally non-uniform backside film.

[0037] Although embodiments with uniform backside films are possible, it is also possible to form non-uniform backside films. For example, the first duration may be greater than the second duration in order to form a thicker backside film on one side of the substrate. Alternatively, only one of the first tool configuration or the second tool configuration may be selected without rotating the substrate 125. In other embodiments, the rotation may be performed at a varying angular velocity, and a constant (or varying) process gas flow rate may be used to produce intentionally non-uniform backside film deposition.

[0038] Now refer to Figure 2 , a cross-sectional view illustration of a portion of a semiconductor processing tool 200 is illustrated according to additional embodiments. Figure 1A and Figure 1B Compared to the cross flow of process gas in the chamber, the process gas flows into the chamber from below the substrate 225. In some embodiments, flowing the process gas from the bottom of the substrate 225 can allow for more uniform backside film deposition. In particular, it may not be necessary to rotate the substrate 225 or switch the configuration of the semiconductor processing tool 200 to provide the desired backside film uniformity.

[0039] In an embodiment, the semiconductor processing tool may include a pedestal 220. The pedestal 220 may be coupled to an RF source to strike a plasma between a substrate 225 and the pedestal 220. In an embodiment, the pedestal 220 may further include a heater to provide a high temperature backside film. For simplicity, a ground plane for completing the circuit is omitted. However, it should be understood that an electrical ground plane (e.g., a showerhead) may be provided above the substrate 225. A lift pin 222 may be provided to support the substrate 225 in an elevated position relative to the pedestal 220.

[0040] In an embodiment, a showerhead 250 may be disposed between the substrate 225 and the pedestal 220. In an embodiment, the showerhead 250 may include a pair of plates 251 and 252. However, it should be understood that a showerhead having a single plate configuration may also be used in some embodiments. In an embodiment, a process gas (as indicated by the arrows) may flow between the pedestal 220 and the first plate 251. The gas may flow upward through the holes 253 in the first plate 251. A gap may be provided between the first plate 251 and the second plate 252 to allow for further distribution of the process gas. In an embodiment, the process gas then flows through the holes 254 in the second plate 252 to enter the chamber.

[0041] In embodiments, the number of holes 253 may be different than the number of holes 254. For example, there may be fewer holes 253 than holes 254. Additionally, the diameter of holes 253 may be larger than the diameter of holes 254. The positioning of holes 253 relative to holes 354 may also be offset to enhance diffusion of the process gas before the process gas enters the chamber beneath the substrate 225.

[0042] Now refer to Figure 3A , a cross-sectional view of a semiconductor processing tool 300 is illustrated, according to an embodiment. In an embodiment, the semiconductor processing tool 300 may include a chamber 330. In an embodiment, the chamber 330 may include a bellows 331 to enable the pedestal 361 to be raised and lowered. In an embodiment, the pedestal 361 may include a heater or the like. In addition, the pedestal 361 may be coupled to an RF source 335, such as a low frequency RF and / or a high frequency RF. In an embodiment, a showerhead 350 may be disposed above the pedestal 361. The showerhead 350 may include a channel (indicated by an arrow) for allowing a gas to enter a processing region to form a plasma 360. In an embodiment, the gas may flow around the pedestal 361. For example, gas sources 334 and 336 may be disposed below the pedestal 360. The gas source 334 may be a processing gas, and the gas source 336 may be a diluent gas (e.g., an inert gas). The gas sources 334 and 336 may be mixed before passing through the showerhead 350 into the processing region between the substrate 325 and the showerhead 350.

[0043] In embodiments, the showerhead 350 may be any suitable material. In a particular embodiment, the showerhead 350 may be a ceramic showerhead 350. In other embodiments, the showerhead 350 may include a conductive material, such as aluminum or the like. Additionally, although a showerhead 350 having a single plate is illustrated, it should be understood that a multi-plate showerhead 350 (similar to the embodiments described above) may be used depending on the embodiment. Additionally, although described as a showerhead, the component 350 may be any suitable processing accessory that allows gas to flow into the processing area of ​​the chamber 330.

[0044] In an embodiment, the substrate 325 may be supported above the showerhead 350 by the lift pins 322. The substrate 325 may be raised to the height of the processing ring 337. When the substrate is in the raised position, the processing ring 337 may surround the periphery of the substrate 325. In an embodiment, an overhead showerhead 339 may be provided above the top surface of the substrate 325. The overhead showerhead 339 may be electrically grounded to complete the circuit for forming the plasma 360. An inert gas 338 may be fed to the overhead showerhead 339. The inert gas flows through the overhead showerhead 339 to provide an inert environment above the top surface of the substrate 325 during processing. In addition, to prevent the plasma from striking above the substrate 325, the distance between the top of the substrate 325 and the bottom of the overhead showerhead 339 may be about 10 mm or less, about 5 mm or less, or about 1 mm or less. In this way, damage to the front side of the substrate 325 is minimized. Overhead showerhead 339 may be heated to provide high temperature deposition of films on the backside of substrate 325 .

[0045] Now refer to Figure 3B , according to additional embodiments, a cross-sectional view illustration of a semiconductor processing tool 300 is illustrated. As shown, gas inlets 334 and 336 may pass through chamber 330, and bellows 363 couple the gas inlets 334 and 336 to holes through isolator 362. Isolator 362 may also be coupled to chamber 330 via external bellows 331. Bellows 363 and 331 enable vertical displacement of the system. In embodiments, a showerhead or process accessory 350 may be disposed above isolator 362. Gases from gas inlets 334 (process gas) and 336 (dilution gas) may mix prior to passing through showerhead 350 into a processing region of chamber 330 where plasma 360 is struck.

[0046] In an embodiment, the substrate 325 is supported in an elevated position by lift pins 322 to provide space for the plasma 360 between the substrate 325 and the showerhead 350. In an embodiment, the substrate 325 can be surrounded by a process ring 337. An overhead showerhead 339 can be provided above the substrate 325. An inert gas 338 can be fed to the overhead showerhead 339. In some embodiments, the overhead showerhead 339 can be electrically grounded. In addition, the showerhead 339 can be heated to provide high temperature film deposition on the backside surface of the substrate 325.

[0047] Now refer to Figure 3C , according to additional embodiments, a cross-sectional view of a semiconductor processing tool 300 is illustrated. In an embodiment, in addition to the overhead grounding feature, Figure 3C The semiconductor processing tool 300 in FIG. 1 may be substantially similar to Figure 3B 330 . Instead of providing a showerhead (e.g., a perforated plate), the top-mounted feature may include a non-perforated plate 339. In order to supply an inert gas 338 to the top side of the substrate 325, a housing 341 may be provided around the non-perforated plate 339. As indicated by the arrows, the inert gas 338 flows around the perforated plate 339 to reach the processing area of ​​the chamber 330. In an embodiment, the non-perforated plate 339 may be electrically grounded. In addition, the non-perforated plate 339 may include a heater to allow high temperature film deposition on the back side of the substrate 325.

[0048] In the above-described embodiments, processing conditions may be maintained to deposit a substantially uniform backside film on the backside surface of the substrate. However, in some embodiments, it may be desirable to apply stress in a non-uniform manner to correct for certain types of bowing (e.g., saddle shaped bowing). In such embodiments, modifications to the semiconductor processing tool may be provided to control the flow of gas into the chamber to deposit a non-uniform backside film.

[0049] Now refer to Figure 4A , illustrates a processing tool with dual zone control of film thickness. As shown, a first zone 471 is disposed at the center of the substrate, and a second zone 472 is disposed radially around the first zone. Such an embodiment can allow the center of the substrate to have a film of different thickness at the center and edge of the substrate. The different zones 471 and 472 can be controlled with any combination of valves or the like to provide a desired film profile.

[0050] Similarly, in Figure 4B , a processing tool with five control regions 471-475 according to an embodiment is illustrated. The use of five regions allows even better control of the backside film profile. In a specific embodiment, five control regions 471-475 can be used to reduce bowing in a saddle-shaped substrate.

[0051] Now refer to Figure 5A , illustrates a perspective view of a showerhead 580 that enables radial distribution of gas into a chamber according to an embodiment. As shown, the showerhead may have an inlet 585 that feeds a plurality of holes 581 around the periphery of the showerhead 580. In addition to controlling the flow of gas entering the inlet 585, valves 582 may also be used to control the flow in certain sections of the showerhead 580. For example, by fully opening, fully closing, or partially closing the valve 582, the flow of processing gas through the plurality of holes 581 may be modulated. In the illustrated embodiment, a total of six valves 582 are illustrated (three visible in the front, three in the back, and one of the three visible). However, it should be understood that any number of valves 582 may be used to provide desired control to a semiconductor processing tool.

[0052] Now refer to Figure 5B , illustrates a cross-sectional view of a valve 582 in an open position according to an embodiment. As shown, the outer portion of the valve 582 can be coupled to a plate 587 adjacent to the hole 581. By rotating the outer portion of the valve 582, the plate 587 can be moved up and down. Figure 5B In the illustrated state, the plate is completely removed from the hole 581 (eg, positioned below the hole 581). As such, the process gas can flow freely through the hole 581.

[0053] Now refer to Figure 5C , illustrates a cross-sectional view of valve 582 in a closed position according to an embodiment. As shown, plate 587 is pressed upward against hole 581 to prevent gas from flowing through hole 581. Although a fully open configuration ( Figure 5B ) and a completely closed configuration ( Figure 5C ), but it should be understood that valve 582 can also be partially closed. In such embodiments, the flow of the process gas is restricted but not completely stopped.

[0054] Now refer to Figure 6 , illustrates a cross-sectional view illustration of a semiconductor processing tool 600 according to yet another embodiment. Figure 6The illustrated embodiment does not control the flow of the process gas, but rather uses modulation of the gap between the RF source and the ground plate 633. For example, the showerhead 639 includes the ground plate 633. However, it should be understood that the showerhead 639 can be conductive and the entire showerhead 639 can be grounded. In addition, the processing accessory 650 (e.g., a showerhead) can be coupled to the RF source 692. The processing accessory can be tilted instead of being raised and lowered in a flat manner. The bellows 631 of the chamber 630 can accommodate the tilt. In an embodiment, the tilted isolator 662 and processing accessory 650 can cause one side of the processing accessory 650 to be closer to the ground plate 633. In this way, the substrate 625 (which is supported by the lift pins 622 and within the processing ring 637) will experience a non-uniform plasma 660 on the surface of the substrate. The non-uniform plasma 660 will result in non-uniform deposition of the backside film.

[0055] Now refer to Figure 7 , a block diagram of an exemplary computer system 700 of a processing tool is illustrated according to an embodiment. In an embodiment, the computer system 700 is coupled to the processing tool and controls the processing in the processing tool. The computer system 700 can be connected (e.g., networked) to other machines in a local area network (LAN), an intranet, an extranet, or the Internet. The computer system 700 can operate as a server or client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 700 can be a personal computer (personal computer, PC), a tablet PC, a set-top box (set-top box, STB), a personal digital assistant (Personal Digital Assistant, PDA), a mobile phone (cellular telephone), a network device (web appliance), a server, a network router, a switch or a bridge (bridge), or any machine capable of executing a set of instructions (sequential or otherwise) specifying an action to be taken by the machine. Further, while only a single machine is illustrated with respect to computer system 700, the term "machine" shall also be taken to include any collection of machines (e.g., computers) that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methodologies described herein.

[0056] The computer system 700 may include a computer program product or software 722, which may include a non-transitory machine-readable medium having instructions stored thereon, which may be used to program the computer system 700 (or other electronic device) to perform a process according to an embodiment. A machine-readable medium includes any mechanism for storing or transmitting information in a machine (e.g., computer) readable form. For example, a machine-readable (e.g., computer-readable) medium includes a machine (e.g., computer) readable storage medium (e.g., read only memory (ROM), random access memory (RAM), magnetic disk storage medium, optical storage medium, flash memory device (flash memory device), etc.), a machine (e.g., computer) readable transmission medium (electrical, optical, acoustic or other form of propagation signal (e.g., infrared signal, digital signal, etc.)), etc.

[0057] In an embodiment, the computer system 700 includes a system processor 702, a main memory 704 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM), such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM)), etc.), a static memory 706 (e.g., flash memory, static random access memory (SRAM), etc.), and an auxiliary memory 718 (e.g., a data storage device), which communicate with each other via a bus 730.

[0058] The system processor 702 represents one or more general-purpose processing devices, such as a microsystem processor, a central processing unit, or the like. More specifically, the system processor may be a complex instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing a combination of instruction sets. The system processor 702 may also be one or more special-purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), a network system processor, or the like. The system processor 702 is configured to execute processing logic 726 to perform the operations described herein.

[0059] The computer system 700 may further include a system network interface device 708 for communicating with other devices or machines. The computer system 700 may also include a video display unit 710 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 712 (e.g., a keyboard), a cursor control device 714 (e.g., a mouse), and a signal generating device 716 (e.g., a speaker).

[0060] The secondary memory 718 may include a machine-accessible storage medium 732 (or more specifically, a computer-readable storage medium) on which is stored one or more sets of instructions (e.g., software 722) embodying any one or more of the methods or functions described herein. The software 722 may also reside completely or at least partially within the main memory 704 and / or the system processor 702 during execution by the computer system 700, the main memory 704 and the system processor 702 also constituting machine-readable storage media. The software 722 may also be sent or received over the network 720 via the system network interface device 708. In embodiments, the network interface device 708 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0061] Although the machine-accessible storage medium 732 is illustrated as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be understood to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) that store one or more sets of instructions. The term "machine-readable storage medium" should also be understood to include any medium capable of storing or encoding a set of instructions for execution by a machine and causing the machine to perform any one or more of the methods. Therefore, the term "machine-readable storage medium" should be understood to include, but is not limited to, solid-state memories and optical and magnetic media.

[0062] In the foregoing specification, specific exemplary embodiments have been described. It will be apparent that various modifications may be made thereto without departing from the scope of the appended claims. Accordingly, the specification and drawings are to be regarded in an illustrative rather than a restrictive sense.

Claims

1. A semiconductor processing tool comprising: Chamber; a base, the base being within the chamber; a first gas feed system on a first side of the susceptor, wherein the first gas feed system comprises: a first exhaust line having a first valve for opening and closing the first exhaust line; and a first source gas feeding line having a second valve for opening and closing the first source gas feeding line; and a second gas feed system on a second side of the susceptor, wherein the second gas feed system comprises: a second exhaust line having a third valve for opening and closing the second exhaust line; and The second source gas feeding line has a fourth valve for opening and closing the second source gas feeding line.

2. The semiconductor processing tool of claim 1 , further comprising: Lift pins are configured to extend out of the base to lift a substrate.

3. The semiconductor processing tool of claim 1 , further comprising: a first nozzle, the first nozzle being located at an inlet of the first gas feeding system; as well as A second nozzle is located at the inlet of the second gas feeding system.

4. The semiconductor processing tool of claim 3, wherein the first showerhead and the second showerhead are substantially similar to each other.

5. The semiconductor processing tool of claim 1 , further comprising: A ground electrode is above the base.

6. The semiconductor processing tool of claim 5, wherein the susceptor is coupled to an RF source.

7. The semiconductor processing tool of claim 1, further comprising: A heater is disposed above the base.

8. The semiconductor processing tool of claim 1, further comprising: An inert gas line is configured to flow an inert gas into the chamber above the susceptor.

9. The semiconductor processing tool of claim 8, wherein the inert gas line flows the inert gas through a showerhead above the susceptor.

10. The semiconductor processing tool of claim 9, wherein a substrate is supported between the showerhead and the pedestal above the pedestal, wherein a plasma is struck below the substrate.

11. The semiconductor processing tool of claim 1, wherein the substrate is configured to rotate at a constant angular velocity or a varying angular velocity.

12. A semiconductor processing tool comprising: Pedestal; a spray head, the spray head being above the base, wherein the spray head comprises a first plate having a first hole and a second plate having a second hole located above the first plate; as well as Lift pins are configured to lift a substrate above the susceptor and the showerhead.

13. The semiconductor processing tool of claim 12, wherein a gap is disposed between the first plate and the second plate.

14. The semiconductor processing tool of claim 12, wherein the showerhead distributes a process gas over a bottom surface of a substrate supported by the lift pins.

15. The semiconductor processing tool of claim 12, wherein the susceptor is coupled to an RF source.

16. A semiconductor processing tool comprising: Chamber; a susceptor in the chamber, wherein the susceptor is coupled to an RF source; a plate above the base, wherein the plate is coupled to an electrical ground; as well as A gas distribution assembly is between the susceptor and the plate, wherein the gas distribution assembly is configured to supply a process gas to a backside of a substrate.

17. The semiconductor processing tool of claim 16, wherein the gas distribution assembly is configured to have two or more zones, wherein each zone is configured to have an independently controllable gas flow rate.

18. The semiconductor processing tool of claim 17, wherein the two or more regions include a central region and four peripheral regions outside the central region.

19. The semiconductor processing tool of claim 16, wherein the pedestal is configured to be tilted such that a first side of the pedestal is closer to the plate than a second side of the pedestal.

20. The semiconductor processing tool of claim 16, further comprising: A plurality of valves are coupled to the gas distribution assembly, wherein the plurality of valves are independently controllable to vary a flow of gas out of the gas distribution assembly.

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