Liquid flow verification method and device of semiconductor equipment and electronic equipment

Abstract

The invention discloses a liquid flow verification method and device for semiconductor equipment and electronic equipment, and the method comprises the steps: obtaining a vacuum chamber carrier gas pressure change value corresponding to a carrier gas flow when the carrier gas flow is equal to a preset carrier gas flow and is kept for a first preset time; when the carrier gas flow is equal to the preset carrier gas flow and the liquid flow is equal to the preset liquid flow, a vacuum chamber mixed gas pressure change value corresponding to the mixed gas flow after a first preset duration is kept is obtained for multiple times; determining a vacuum chamber pressure change value corresponding to each liquid flow according to the vacuum chamber carrier gas pressure change value and the mixed gas pressure change value of each vacuum chamber; and verifying the liquid flow of the semiconductor equipment according to each liquid flow and each vacuum chamber pressure change value corresponding to the liquid flow. According to the invention, the verification precision of the liquid flow output by the liquid flow controller is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of liquid flow calibration, and in particular to a liquid flow calibration method, device and electronic equipment for semiconductor equipment. Background Art

[0002] When the required thin film is generated by chemical vapor deposition process, the gas flow rate has an important influence on process control and film quality. Therefore, the gas flow rate needs to be accurately controlled during the chemical vapor deposition process. The chemical vapor deposition process usually requires mass flow controllers and liquid flow controllers to accurately control the gas flow rate. When performing maintenance and troubleshooting, the accuracy of the mass flow controller and liquid flow controller needs to be verified.

[0003] In the prior art, the calibration of liquid flow controllers generally relies on factory calibration, but the calibration accuracy is low, which affects the uniformity and quality of the semiconductor manufacturing process. Summary of the invention

[0004] The present invention provides a method, a device and an electronic device for checking the liquid flow of a semiconductor device, so as to improve the checking accuracy of the liquid flow output by a liquid flow controller.

[0005] According to one aspect of the present invention, a method for verifying liquid flow rate of a semiconductor device is provided, the method comprising: When the carrier gas flow rate is equal to the preset carrier gas flow rate and maintained for a first preset time, the carrier gas pressure change value of the vacuum chamber corresponding to the carrier gas flow rate is obtained; wherein the carrier gas flow rate is the flow rate output by the mass flow controller; When the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate for multiple times and the first preset time is maintained, the mixed gas pressure change value of the vacuum chamber corresponding to the mixed gas flow rate is obtained; wherein the mixed gas flow rate is the mixed gas flow rate of the carrier gas and the vaporized liquid; the liquid flow rate is the flow rate output by the liquid flow controller; Determine the vacuum chamber pressure change value corresponding to each liquid flow rate according to the vacuum chamber carrier gas pressure change value and each vacuum chamber mixed gas pressure change value; The liquid flow rate of the semiconductor device is verified according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate.

[0006] Furthermore, the liquid flow rate of the semiconductor device is verified according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate, including: Determine a plurality of reference deviation rates corresponding to each liquid flow rate according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate; Each liquid flow rate of semiconductor equipment is calibrated according to the baseline deviation rate.

[0007] Further, each liquid flow rate of the semiconductor device is verified according to the reference deviation rate, including: Each reference deviation rate is compared with a fault tolerance threshold and a fault threshold, and each liquid flow rate of the semiconductor device is verified according to the comparison result.

[0008] Furthermore, each reference deviation rate is compared with a fault tolerance threshold and a fault threshold, and each liquid flow rate of the semiconductor device is verified according to the comparison result, including: If the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold, the liquid flow corresponding to the reference deviation rate is calibrated; If the reference deviation rate is greater than or equal to the fault threshold, an alarm is performed on the liquid flow corresponding to the reference deviation rate.

[0009] Furthermore, the difference between the pressure change values ​​of two adjacent vacuum chambers is greater than a preset pressure difference value.

[0010] Further, when the carrier gas flow rate is equal to the preset carrier gas flow rate and is maintained for a first preset time, the change value of the carrier gas pressure of the vacuum chamber corresponding to the carrier gas flow rate is obtained, and the method also includes: The vacuum chamber is controlled to be in a vacuum state, the temperature of the vacuum chamber is controlled to be within a preset temperature range, and the chamber leakage rate of the vacuum chamber is controlled to be within a second preset range.

[0011] According to another aspect of the present invention, a liquid flow rate verification device for semiconductor equipment is provided, the liquid flow rate verification device comprising: A vacuum chamber carrier gas pressure acquisition module, used to acquire a change value of the vacuum chamber carrier gas pressure corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to a preset carrier gas flow rate and maintained for a first preset time period; wherein the carrier gas flow rate is a flow rate output by a mass flow controller; A vacuum chamber mixed gas pressure acquisition module, used for repeatedly acquiring a vacuum chamber mixed gas pressure change value corresponding to the mixed gas flow rate when the carrier gas flow rate is equal to a preset carrier gas flow rate and the liquid flow rate is equal to a preset liquid flow rate and maintained for a first preset time period; wherein the mixed gas flow rate is a mixed gas flow rate of the carrier gas and the vaporized liquid; and the liquid flow rate is a flow rate output by a liquid flow controller; A vacuum chamber pressure change value determination module is used for the vacuum chamber carrier gas pressure change value and each vacuum chamber mixed gas pressure change value to determine the vacuum chamber pressure change value corresponding to each liquid flow rate; The liquid flow rate verification module is used to verify the liquid flow rate of the semiconductor device according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate.

[0012] According to another aspect of the present invention, an electronic device is provided, the electronic device comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein, The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the liquid flow calibration method for semiconductor equipment described in any embodiment of the present invention.

[0013] According to another aspect of the present invention, a computer-readable storage medium is provided, wherein the computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the liquid flow verification method for a semiconductor device described in any embodiment of the present invention when executed.

[0014] According to another aspect of the present invention, a computer program product is provided. The computer program product includes a computer program. When the computer program is executed by a processor, the liquid flow verification method of the semiconductor device described in any embodiment of the present invention is implemented.

[0015] The liquid flow calibration method for semiconductor equipment provided by an embodiment of the present invention comprises obtaining a carrier gas pressure change value of a vacuum chamber corresponding to the carrier gas flow when the carrier gas flow is equal to a preset carrier gas flow and maintained for a first preset time, then obtaining a mixed gas pressure change value of the vacuum chamber corresponding to the mixed gas flow when the carrier gas flow is equal to the preset carrier gas flow and the liquid flow is equal to the preset liquid flow and maintained for a first preset time for multiple times, determining a vacuum chamber pressure change value corresponding to each liquid flow according to the carrier gas pressure change value of the vacuum chamber and each mixed gas pressure change value of the vacuum chamber, and calibrating the liquid flow of the semiconductor equipment according to each liquid flow and each vacuum chamber pressure change value corresponding to the liquid flow. Since the vacuum chamber pressure change value is proportional to the gas flow, and residual gas is likely to exist in the vacuum chamber, which is likely to cause system errors, the present application determines the vacuum chamber pressure change value corresponding to each liquid flow according to the carrier gas pressure of the vacuum chamber and each mixed gas pressure, that is, adopts a differential method to eliminate system errors, improves the accuracy of data measurement, and thereby improves the calibration accuracy of the liquid flow output by the liquid flow controller.

[0016] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 is a flow chart of a method for verifying liquid flow rate of a semiconductor device provided in accordance with an embodiment of the present invention; Figure 2 is a structural schematic diagram of a liquid flow calibration device provided according to an embodiment of the present invention; Figure 3 is a scatter plot of a liquid flow rate and a vacuum chamber pressure change value provided according to an embodiment of the present invention; Figure 4 is a trend diagram of a liquid flow rate and a vacuum chamber pressure change value provided according to an embodiment of the present invention; Figure 5 is a schematic structural diagram of a liquid flow rate calibration device for semiconductor equipment provided according to an embodiment of the present invention; Figure 6 A schematic diagram of the structure of an electronic device that can be used to implement an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0019] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0020] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0021] An embodiment of the present invention provides a method for verifying liquid flow rate of a semiconductor device. Figure 1 is a flow chart of a method for verifying liquid flow rate of a semiconductor device provided in accordance with an embodiment of the present invention. Figure 2 is a schematic diagram of a liquid flow rate calibration device according to an embodiment of the present invention, with reference to Figure 1 and Figure 2 , liquid flow verification methods include: S110, obtaining a carrier gas pressure change value of the vacuum chamber corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and maintained for a first preset time period; wherein the carrier gas flow rate is the flow rate output by the mass flow controller.

[0022] Specifically, after starting to calibrate the liquid flow rate of the semiconductor device, the vacuum chamber 4 is first controlled to be in a vacuum state, and the vacuum chamber temperature is controlled within a preset temperature range, and at the same time, the chamber leakage rate of the vacuum chamber 4 is controlled within a second preset range. For example, during the chamber leakage rate test, if there is residual liquid in the vacuum chamber 4, the residual liquid will slowly release into gas under a vacuum environment, causing the pressure to rise. At this time, it is easy for the chamber leakage rate to not meet the requirements. Therefore, when the chamber leakage rate meets the experimental requirements, it can be judged that there is no liquid in the vacuum chamber 4; if the chamber leakage rate does not meet the experimental requirements, the test is stopped and the chamber abnormality problem is checked. After ensuring that the chamber leakage rate of the vacuum chamber 4 meets the experimental requirements, the mass flow controller 2, the vaporization controller 5 and the diaphragm valve 6 are controlled to open and work, and the bypass valve 8 is controlled to be closed, so that the carrier gas enters the vacuum chamber 4 through the mass flow controller 2, the vaporization controller 5, the gas heating pipeline 7 and the diaphragm valve 6, and when the carrier gas flow rate is equal to the preset carrier gas flow rate and remains stable, the isolation valve 9 is controlled to be closed, and the carrier gas is continuously output to the vacuum chamber 4 for the first preset time. After that, the pressure change value of the vacuum chamber carrier gas pressure after the first preset time is continuously output to the vacuum chamber 4 is obtained through the pressure gauge 1. Among them, the first preset time can be set according to the actual situation, and the embodiment of the present invention does not limit this. The carrier gas can be an inert gas such as nitrogen. In addition, extending the first preset time can amplify the pressure change value, and adjusting the preset carrier gas flow rate can prevent the pressure from exceeding the range, thereby achieving a wide range coverage of 0.2-10g / min.

[0023] S120. When the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate for multiple times and is maintained for a first preset time, the mixed gas pressure change value of the vacuum chamber corresponding to the mixed gas flow rate is obtained; wherein the mixed gas flow rate is the mixed gas flow rate of the carrier gas and the vaporized liquid, and the liquid flow rate is the flow rate output by the liquid flow controller.

[0024] Specifically, after obtaining the carrier gas pressure change value of the vacuum chamber corresponding to the carrier gas flow rate, continue to control the mass flow controller 2 to output the carrier gas flow rate, which is the preset carrier gas flow rate, and open the isolation valve 9 to make the vacuum chamber 4 in a balanced state. At this time, the liquid flow controller 3 is controlled to open and work, and the liquid output by the liquid flow controller 3 is vaporized by the vaporization controller 5, and then mixed with the carrier gas output by the mass flow controller 2 to form a mixed gas, and enters the vacuum chamber 4 through the gas heating pipeline 7 and the diaphragm valve 6. When the liquid flow output by the liquid flow controller 3 is equal to the preset liquid flow rate and remains stable, the isolation valve 9 is controlled to close. At this time, after continuously outputting the mixed gas to the vacuum chamber 4 for the first preset time period, the vacuum chamber mixed gas pressure change value of the vacuum chamber 4 after continuously outputting the mixed gas to the vacuum chamber 4 for the first preset time period is obtained. After that, after changing the liquid flow rate output by the liquid flow controller 3 for multiple times, that is, changing the mixed gas flow rate, repeat the above steps to achieve the acquisition of the mixed gas pressure change value of the vacuum chamber within the first preset time period under different mixed gas flow rates. For example, the mixed gas pressure change value of the vacuum chamber under different mixed gas flow rates can be acquired 10 times according to actual needs, and the liquid flow rates with the same preset threshold value can be increased sequentially, and the mixed gas pressure change value of the vacuum chamber under each corresponding mixed gas flow rate can be determined according to the liquid flow rate after increasing the preset threshold value. In the process of obtaining the change value of the mixed gas pressure of the vacuum chamber under multiple different mixed gas flow rates, after each mixed gas measurement, the change of the chamber state caused by the residual liquid after vaporization is the key interference factor in the measurement process. In order to solve the above interference problem, the following solutions are proposed, which are specifically described as follows: Solution 1, after each mixed gas measurement, the chamber temperature can be maintained at a first preset temperature, exemplarily, the first preset temperature is 65°C, and the heating base in the vacuum chamber 4 is maintained at a second preset temperature, exemplarily, the second preset temperature is 400°C, at this time, the dry pump 11 continues to pump gas and maintains the first set time, exemplarily, the first set time is 24 hours, so that the residual liquid is completely vaporized and discharged to restore the initial state of the vacuum chamber 4; Solution 2, a high flow rate of inert gas can be quickly introduced into the vacuum chamber 4, exemplarily, the high flow rate of inert gas can be helium, nitrogen, etc., the flow rate is greater than or equal to 5000 sccm, and maintained for the second set time, exemplarily, the second set time is 30s, forming gas turbulence to flush the cavity wall. After flushing the cavity wall with gas, the vacuum is repeatedly pumped to the baseline pressure to ensure that the residue is carried out. After the above chamber liquid residue optimization process is performed, the chamber leakage rate test can be performed again to determine whether there is liquid residue in the vacuum chamber 4.

[0025] S130, determining a vacuum chamber pressure change value corresponding to each liquid flow rate according to the vacuum chamber carrier gas pressure change value and each vacuum chamber mixed gas pressure change value.

[0026] Specifically, the obtained mixed gas pressure change value of each vacuum chamber may be subtracted from the carrier gas pressure change value of the vacuum chamber, thereby determining the vacuum chamber pressure change value corresponding to each liquid flow rate.

[0027] S140, verifying the liquid flow rate of the semiconductor device according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate.

[0028] Specifically, multiple reference deviation rates corresponding to each liquid flow rate can be determined based on each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate, and finally each liquid flow rate of the semiconductor device can be verified based on the reference deviation rate. Exemplarily, a scatter plot of liquid flow rate and vacuum chamber pressure change value can be drawn based on each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate, and then multiple reference deviation rates corresponding to each liquid flow rate can be calculated based on the scatter plot of liquid flow rate and vacuum chamber pressure change value. Among them, the reference deviation rate is a physical quantity indicating whether the current liquid flow rate is in a normal state.

[0029] The liquid flow calibration method for semiconductor equipment provided by an embodiment of the present invention comprises obtaining a carrier gas pressure change value of a vacuum chamber corresponding to the carrier gas flow when the carrier gas flow is equal to a preset carrier gas flow and maintained for a first preset time, then obtaining a mixed gas pressure change value of the vacuum chamber corresponding to the mixed gas flow when the carrier gas flow is equal to the preset carrier gas flow and the liquid flow is equal to the preset liquid flow and maintained for a first preset time for multiple times, determining a vacuum chamber pressure change value corresponding to each liquid flow according to the carrier gas pressure change value of the vacuum chamber and each mixed gas pressure change value of the vacuum chamber, and calibrating the liquid flow of the semiconductor equipment according to each liquid flow and each vacuum chamber pressure change value corresponding to the liquid flow. Since the vacuum chamber pressure change value is proportional to the gas flow, and residual gas is likely to exist in the vacuum chamber, which is likely to cause system errors, the present application determines the vacuum chamber pressure change value corresponding to each liquid flow according to the carrier gas pressure of the vacuum chamber and each mixed gas pressure, that is, adopts a differential method to eliminate system errors, improves the accuracy of data measurement, and thereby improves the calibration accuracy of the liquid flow output by the liquid flow controller.

[0030] For example, Figure 3 is a scatter plot of a liquid flow rate and a vacuum chamber pressure change value provided by an embodiment of the present invention. Figure 4 is a trend diagram of a liquid flow rate and a vacuum chamber pressure change value provided according to an embodiment of the present invention, such as Figure 3 and Figure 4 As shown, the embodiment of the present invention is described by taking the liquid output by the liquid flow controller as triethyl borate and the carrier gas as helium as an example, and the specific description is as follows: The ambient temperature of the vacuum chamber 4 is 400°C, the first preset time is 100s, the preset carrier gas flow rate is 300sccm, and the chamber leakage rate is less than 2mTorr / min. The range of the liquid flow controller is 0.5g / min, i.e. 500mg / m. According to the above calibration method, the following data as described in Table 1 can be obtained, wherein Table 1 is a corresponding relationship table of liquid flow rate and vacuum chamber pressure change value: Table 1 Corresponding relationship between liquid flow rate and vacuum chamber pressure change value

[0031] Then, according to the data in Table 1, Figure 3 The scatter plot shown in the figure is plotted through linear regression analysis. Figure 4 The trend graph is shown, and the relationship factor k and the goodness of fit R² of the evaluation model are calculated by the least squares method. Since the R² in the four groups of data are all above 0.999 and close to 1, the model fits the data very well. At this time, the k values ​​calculated by the least squares method are close, namely k1=0.0375, k2=0.0379, k3=0.0374, k4=0.0373, and the benchmark factor k0=0.0375.25 is calculated from k1, k2, k3 and k4. The liquid flow rate of the semiconductor equipment is verified based on the calculated multiple relationship factors and benchmark factors.

[0032] Furthermore, the liquid flow rate of the semiconductor device is verified according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate, including: Determine a plurality of reference deviation rates corresponding to each liquid flow rate according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate; Each liquid flow rate of semiconductor equipment is calibrated according to the baseline deviation rate.

[0033] Specifically, according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate, a graph is drawn as follows: Figure 3 After looking at the scatter plot shown, it can be intuitively confirmed that the liquid flow rate is proportional to the change in vacuum chamber pressure, and the relationship factor is calculated by the least squares method, that is, Figure 4 The slope of the straight line in the trend graph is shown. Then, multiple sets of liquid flow rates and vacuum chamber pressure change values ​​are obtained, and multiple relationship factors are calculated based on the multiple sets of liquid flow rates and vacuum chamber pressure change values, and the multiple relationship factors are averaged to determine the reference factor, and multiple reference deviation rates corresponding to each liquid flow rate are determined according to each relationship factor and the reference factor according to the following formula: A = (|k0-ki| / k0); Wherein, A is the reference deviation rate, k0 is the reference factor, ki is the relationship factor, and i is a positive integer greater than 0.

[0034] The reference deviation rate A is the relative error percentage between the currently measured relationship factor ki and the factory reference factor k0. The reference deviation rate A reflects the stability and accuracy of the liquid flow controller. By dynamically monitoring the reference deviation rate A, the drift degree of the liquid flow controller can be quantified to ensure high-precision control of repeated processes. Each reference deviation rate is then compared with the fault tolerance threshold and the fault threshold, and each liquid flow of the semiconductor device is verified based on the comparison results.

[0035] Further, each liquid flow rate of the semiconductor device is verified according to the reference deviation rate, including: Each reference deviation rate is compared with a fault tolerance threshold and a fault threshold, and each liquid flow rate of the semiconductor device is verified according to the comparison result.

[0036] Specifically, if the benchmark deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold, the liquid flow corresponding to the benchmark deviation rate is calibrated; if the benchmark deviation rate is greater than or equal to the fault threshold, the liquid flow corresponding to the benchmark deviation rate is alarmed, wherein the fault tolerance threshold and the fault threshold can be set according to actual conditions. For example, the fault tolerance threshold may be 5%, and the fault threshold may be 10%. If the benchmark deviation rate A is less than 5%, it is judged that the system is in a normal state and no calibration is required; if the benchmark deviation rate A is greater than or equal to 5% and less than 10%, the liquid flow corresponding to the benchmark deviation rate is calibrated; if the benchmark deviation rate A is greater than or equal to 10%, it indicates that there is an abnormality in the liquid flow controller, an alarm is performed on the liquid flow corresponding to the benchmark deviation rate, and the fault is checked. If k1=0.0375, k2=0.0379, k3=0.0374, k4=0.0373, k0=0.0375.25, then according to the calculation formula of the reference deviation rate, A1=0, A2=1.067%, A3=0.267%, A4=0.533% are calculated. The above four reference deviation rates are all less than the fault tolerance threshold, so the system is judged to be in a normal state and no calibration is required. If k0=0.0375, ki=0.0395, the reference deviation rate A≈5.33%, and the liquid flow corresponding to the reference deviation rate needs to be calibrated.

[0037] Furthermore, each reference deviation rate is compared with a fault tolerance threshold and a fault threshold, and each liquid flow rate of the semiconductor device is verified according to the comparison result, including: If the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold, the liquid flow corresponding to the reference deviation rate is calibrated; If the reference deviation rate is greater than or equal to the fault threshold, an alarm is performed on the liquid flow corresponding to the reference deviation rate.

[0038] Specifically, if the reference deviation rate is less than the fault tolerance threshold, it indicates that the liquid flow rate is in a normal state.

[0039] If the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold, it indicates that the liquid flow is in an abnormal state. At this time, the liquid flow corresponding to the reference deviation rate may be calibrated. For example, the liquid flow corresponding to the reference deviation rate may be calibrated according to the following formula: Fi' = Fi × k0 / kj; Wherein, Fi' is the liquid flow after calibration, Fi is the abnormal liquid flow before calibration, k0 is the reference factor, and kj is the relationship factor corresponding to the abnormal liquid flow before calibration.

[0040] After determining the calibrated liquid flow rate, the relationship factor corresponding to the calibrated liquid flow rate is calculated according to the above calculation method, and the corresponding reference deviation rate is determined according to the relationship factor, and it is judged whether the reference deviation rate is less than the fault tolerance threshold. If so, the calibration is terminated; if not, the liquid flow rate is continuously calibrated until the calculated reference deviation rate is less than the fault tolerance threshold. For example, if the original set liquid flow rate Fi=500mg / min, the calibrated liquid flow rate Fi'=500×0.375 / 0.0395≈474.68 mg / min, the relationship factor corresponding to the calibrated liquid flow rate Fi' is calculated according to the above calculation method, and the corresponding reference deviation rate is determined according to the relationship factor, and it is judged whether the reference deviation rate is less than the fault tolerance threshold. If the reference deviation rate is greater than or equal to the fault threshold, it means that the reference deviation rate is large. At this time, the liquid flow controller is in an abnormal state, and an alarm processing is required for the liquid flow corresponding to the reference deviation rate. Among them, the fault tolerance threshold and the fault threshold can be set according to the actual situation, and the embodiment of the present invention does not limit this.

[0041] Furthermore, the difference between the pressure change values ​​of two adjacent vacuum chambers is greater than a preset pressure difference value.

[0042] The preset pressure difference may be 1% of the range of the pressure gauge 1.

[0043] Specifically, if the difference between the pressure change values ​​of two adjacent vacuum chambers is less than or equal to the preset pressure difference, the preset carrier gas flow rate and the first preset time length can be changed so that the difference between the pressure change values ​​of the two adjacent vacuum chambers is greater than the preset pressure difference, thereby realizing the calibration of the liquid flow of the small-range liquid flow controller and further improving the calibration accuracy of the liquid flow.

[0044] For further reference, Figure 2, obtaining a carrier gas pressure change value of the vacuum chamber corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and maintained for a first preset time period, and previously also including: The vacuum chamber is controlled to be in a vacuum state, the temperature of the vacuum chamber is controlled to be within a preset temperature range, and the chamber leakage rate of the vacuum chamber is controlled to be within a second preset range.

[0045] Specifically, before obtaining the carrier gas pressure of the vacuum chamber corresponding to the carrier gas flow rate through the pressure gauge 1, the isolation valve 9, the vacuum control module 10 and the dry pump 11 are controlled to open and work, so as to control the vacuum chamber 4 to maintain the vacuum state for the second preset time, and control the vacuum chamber temperature within the preset temperature range, and at the same time control the chamber leakage rate of the vacuum chamber 4 within the second preset range, wherein the second preset time, the preset temperature range and the second preset range can be set according to actual conditions. For example, the second preset time can be 24 hours.

[0046] An embodiment of the present invention provides a liquid flow rate calibration device for semiconductor equipment. Figure 5 is a schematic diagram of a liquid flow rate calibration device for a semiconductor device according to an embodiment of the present invention, with reference to Figure 5 , the liquid flow rate verification device 200 comprises: The vacuum chamber carrier gas pressure acquisition module 210 is used to acquire the change value of the vacuum chamber carrier gas pressure corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and maintained for a first preset time period; wherein the carrier gas flow rate is the flow rate output by the mass flow controller; The vacuum chamber mixed gas pressure acquisition module 220 is used to obtain the vacuum chamber mixed gas pressure change value corresponding to the mixed gas flow rate when the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate for multiple times and the mixed gas flow rate is maintained for a first preset time period; wherein the mixed gas flow rate is the mixed gas flow rate of the carrier gas and the vaporized liquid; and the liquid flow rate is the flow rate output by the liquid flow controller; A vacuum chamber pressure change value determination module 230, for determining a vacuum chamber pressure change value corresponding to each liquid flow rate according to the vacuum chamber carrier gas pressure change value and each vacuum chamber mixed gas pressure change value; The liquid flow rate verification module 240 is used to verify the liquid flow rate of the semiconductor device according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate.

[0047] Further, the liquid flow verification module 240 includes: A reference deviation rate determination submodule, used to determine a plurality of reference deviation rates corresponding to each liquid flow rate according to each liquid flow rate and each vacuum chamber pressure change value corresponding to the liquid flow rate; The liquid flow rate verification submodule verifies each liquid flow rate of the semiconductor device according to the reference deviation rate.

[0048] Furthermore, the liquid flow verification submodule includes: The liquid flow verification unit is used to compare each reference deviation rate with the fault tolerance threshold and the fault threshold, and verify each liquid flow of the semiconductor device according to the comparison result.

[0049] Further, the liquid flow verification unit comprises: A calibration processing subunit, used for performing calibration processing on the liquid flow corresponding to the reference deviation rate when the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold; The alarm processing subunit is used to perform alarm processing on the liquid flow corresponding to the reference deviation rate when the reference deviation rate is greater than or equal to the fault threshold.

[0050] Furthermore, the difference between the pressure change values ​​of two adjacent vacuum chambers is greater than a preset pressure difference value.

[0051] Furthermore, the liquid flow rate verification device 200 further includes: The vacuum processing module is used to control the vacuum chamber to be in a vacuum state, control the vacuum chamber temperature to be within a preset temperature range, and control the chamber leakage rate of the vacuum chamber to be within a second preset range when the carrier gas flow rate is equal to the preset carrier gas flow rate and maintained for a first preset time and before the carrier gas pressure of the vacuum chamber corresponding to the carrier gas flow rate changes.

[0052] The liquid flow rate verification device for semiconductor equipment provided by the embodiment of the present invention can execute the liquid flow rate verification method for semiconductor equipment provided by any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0053] Figure 6 A schematic diagram of an electronic device that can be used to implement an embodiment of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0054] like Figure 6As shown, the electronic device 100 includes at least one processor 110, and a memory connected to the at least one processor 110 in communication, such as a read-only memory (ROM) 120, a random access memory (RAM) 130, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 110 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 120 or the computer program loaded from the storage unit 180 to the random access memory (RAM) 130. In the RAM 130, various programs and data required for the operation of the electronic device 100 can also be stored. The processor 110, the ROM 120, and the RAM 130 are connected to each other through a bus 140. The input / output (I / O) interface 150 is also connected to the bus 140.

[0055] A number of components in the electronic device 100 are connected to the I / O interface 150, including: an input unit 160, such as a keyboard, a mouse, etc.; an output unit 170, such as various types of displays, speakers, etc.; a storage unit 180, such as a disk, an optical disk, etc.; and a communication unit 190, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 190 allows the electronic device 100 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0056] The processor 110 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the processor 110 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 110 performs the various methods and processes described above, such as a liquid flow verification method for semiconductor equipment.

[0057] In some embodiments, the liquid flow verification method for semiconductor devices may be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 180. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 100 via the ROM 120 and / or the communication unit 190. When the computer program is loaded into the RAM 130 and executed by the processor 110, one or more steps of the liquid flow verification method for semiconductor devices described above may be performed. Alternatively, in other embodiments, the processor 110 may be configured as a liquid flow verification method for semiconductor devices in any other appropriate manner (e.g., by means of firmware).

[0058] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0059] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0060] In the context of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, device, or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices, or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0061] To provide interaction with a user, the systems and techniques described herein may be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0062] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0063] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0064] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0065] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for checking liquid flow rate of semiconductor equipment, characterized in that: include: When the carrier gas flow rate is equal to the preset carrier gas flow rate and maintained for a first preset time, the carrier gas pressure change value of the vacuum chamber corresponding to the carrier gas flow rate is obtained; wherein the carrier gas flow rate is the flow rate output by the mass flow controller; When the carrier gas flow rate is equal to the preset carrier gas flow rate and the liquid flow rate is equal to the preset liquid flow rate for multiple times and the first preset time is maintained, the mixed gas pressure change value of the vacuum chamber corresponding to the mixed gas flow rate is obtained; wherein the mixed gas flow rate is the mixed gas flow rate of the carrier gas and the vaporized liquid; and the liquid flow rate is the flow rate output by the liquid flow controller; Determining a vacuum chamber pressure change value corresponding to each of the liquid flows according to the vacuum chamber carrier gas pressure change value and each of the vacuum chamber mixed gas pressure change values; The liquid flow rate of the semiconductor device is verified according to each of the liquid flow rates and each vacuum chamber pressure change value corresponding to the liquid flow rate.

2. The liquid flow calibration method for semiconductor equipment according to claim 1, characterized in that: The liquid flow rate of the semiconductor device is verified according to each of the liquid flow rates and each vacuum chamber pressure change value corresponding to the liquid flow rate, comprising: Determine a plurality of reference deviation rates corresponding to each of the liquid flows according to each of the liquid flows and each of the vacuum chamber pressure change values ​​corresponding to the liquid flows; Each liquid flow rate of the semiconductor equipment is verified according to the reference deviation rate.

3. The liquid flow calibration method for semiconductor equipment according to claim 2, characterized in that: Verifying each liquid flow rate of the semiconductor device according to the reference deviation rate includes: Each of the reference deviation rates is compared with a fault tolerance threshold and a failure threshold, and each of the liquid flow rates of the semiconductor device is verified based on the comparison result.

4. The liquid flow calibration method for semiconductor equipment according to claim 3, characterized in that: Comparing each of the reference deviation rates with a fault tolerance threshold and a fault threshold, and verifying each of the liquid flow rates of the semiconductor device according to the comparison result, including: If the reference deviation rate is greater than or equal to the fault tolerance threshold and less than the fault threshold, a calibration process is performed on the liquid flow corresponding to the reference deviation rate; If the reference deviation rate is greater than or equal to the fault threshold, an alarm is performed on the liquid flow rate corresponding to the reference deviation rate.

5. The liquid flow calibration method for semiconductor equipment according to claim 1, characterized in that: The difference between the pressure change values ​​of two adjacent vacuum chambers is greater than a preset pressure difference value.

6. The method for verifying liquid flow rate of semiconductor equipment according to claim 1, characterized in that: When the carrier gas flow rate is equal to the preset carrier gas flow rate and is maintained for a first preset time period, the change value of the carrier gas pressure of the vacuum chamber corresponding to the carrier gas flow rate is obtained, and the above also includes: The vacuum chamber is controlled to be in a vacuum state, the temperature of the vacuum chamber is controlled to be within a preset temperature range, and the chamber leakage rate of the vacuum chamber is controlled to be within a second preset range.

7. A liquid flow rate calibration device for semiconductor equipment, characterized in that: include: A vacuum chamber carrier gas pressure acquisition module, used to acquire a vacuum chamber carrier gas pressure change value corresponding to the carrier gas flow rate when the carrier gas flow rate is equal to a preset carrier gas flow rate and maintained for a first preset time period; wherein the carrier gas flow rate is a flow rate output by a mass flow controller; A vacuum chamber mixed gas pressure acquisition module, used for repeatedly acquiring a vacuum chamber mixed gas pressure change value corresponding to the mixed gas flow rate when the carrier gas flow rate is equal to a preset carrier gas flow rate and the liquid flow rate is equal to a preset liquid flow rate and maintained for a first preset time period; wherein the mixed gas flow rate is a mixed gas flow rate of the carrier gas and the vaporized liquid; and the liquid flow rate is a flow rate output by a liquid flow controller; A vacuum chamber pressure change value determination module, used to determine a vacuum chamber pressure change value corresponding to each of the liquid flows according to the vacuum chamber carrier gas pressure change value and each of the vacuum chamber mixed gas pressure change values; The liquid flow rate verification module is used to verify the liquid flow rate of the semiconductor device according to each of the liquid flows and each vacuum chamber pressure change value corresponding to the liquid flow rate.

8. An electronic device, characterized in that: The electronic device comprises: at least one processor; and a memory communicatively connected to the at least one processor; wherein, The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the liquid flow calibration method for semiconductor equipment according to any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the liquid flow calibration method for a semiconductor device according to any one of claims 1 to 6 when executed.

10. A computer program product, characterized in that The computer program product comprises a computer program, and when the computer program is executed by a processor, the computer program implements the liquid flow verification method for semiconductor equipment according to any one of claims 1 to 6.

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