Radio frequency front end module

Abstract

The application discloses a radio frequency front end module, which comprises a substrate, a first amplification unit, a second amplification unit, a first transformer and a first output matching circuit arranged on the substrate, wherein the output end of the first amplification unit is connected to the first transformer, the output end of the second amplification unit is connected to the first output matching circuit, the first transformer comprises a first winding and a second winding which are coupled to each other, the first winding comprises a first main line connected between the first end of the first winding and the second end of the first winding, the second winding comprises a first secondary line connected between the first end of the second winding and the second end of the second winding, and the first main line and the first secondary line are arranged following each other, so that the occupied area of the first transformer can be reduced, the flexibility of the layout of the first transformer on the substrate can be improved, and the requirements of the radio frequency front end module on performance and area can be met.

Description

Technical Field

[0001] This invention relates to the field of radio frequency technology, and in particular to a radio frequency front-end module. Background Technology

[0002] An RF front-end module integrates two or more discrete components, such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers, into a single module, thereby improving integration and performance while miniaturizing the size. The power amplifier, a crucial component of the RF front-end module, converts low-power signals from communication equipment into high-power transmission signals for the antenna. However, in designing RF front-end modules, the transformers often occupy a large area and have very limited layout, hindering miniaturization. Summary of the Invention

[0003] This invention provides a radio frequency (RF) front-end module that solves the problem that RF front-end modules cannot simultaneously balance area and performance.

[0004] A radio frequency (RF) front-end module includes a substrate; a first amplification unit, a second amplification unit, a first transformer, and a first output matching circuit disposed on the substrate; the output terminal of the first amplification unit is connected to the first transformer, and the output terminal of the second amplification unit is connected to the first output matching circuit; wherein, the first transformer includes a first winding and a second winding coupled to each other, the first winding includes a first main line connected between a first end and a second end of the first winding; the second winding includes a first secondary line connected between a first end and a second end of the second winding, the first main line and the first secondary line being arranged sequentially; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding; the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value being the distance between the first end of the second winding and the second end of the second winding.

[0005] A radio frequency (RF) front-end module includes a substrate; a first amplification unit and a third amplification unit, a first transformer and a second transformer disposed on the substrate; the output terminal of the first amplification unit is connected to the first transformer, and the output terminal of the third amplification unit is connected to the second transformer; wherein, the first transformer includes a first winding and a second winding coupled to each other, the first winding including a first main line connected between a first end and a second end of the first winding; the second winding including a first secondary line connected between a first end and a second end of the second winding, the first main line and the first secondary line being arranged sequentially; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the first secondary line being less than a first value, the second value being the distance between the first end of the first winding and the second end of the second winding, the first main line and the second secondary line being less than a first value, the second end of the first winding and the third secondary line being less than a first value, the third primary line being less than a first value, the fourth primary line being less than a first value, the fifth primary line being less than a first value, the sixth primary line being less than a first value, the seventh primary line being less than a first value, the eleventh ... The distance between the two ends is less than a second value, where the second value is the distance between the first end of the second winding and the second end of the second winding; wherein, the second transformer includes a third winding and a fourth winding coupled to each other, the third winding including a second main line connected between the first end of the third winding and the second end of the first winding; the fourth winding including a second secondary line connected between the first end of the fourth winding and the second end of the second winding, the second main line and the second secondary line being arranged in a mutually following manner; the distance between the first end of the third winding and the first end of the fourth winding is less than a third value, where the third value is the distance between the first end of the third winding and the second end of the fourth winding; the distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, where the fourth value is the distance between the first end of the fourth winding and the second end of the fourth winding.

[0006] In this embodiment, the radio frequency front-end module includes a substrate, a first amplification unit, a second amplification unit, a first transformer, and a first output matching circuit. The first amplification unit, the second amplification unit, the first transformer, and the first output matching circuit are disposed on the substrate. The output terminal of the first amplification unit is connected to the first transformer, and the output terminal of the second amplification unit is connected to the first output matching circuit. The first transformer includes a first winding and a second winding coupled to each other. The first winding includes a first main wire connected between a first end and a second end of the first winding. The second winding includes a first secondary wire connected between a first end and a second end of the second winding. The line and the first-stage line are arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding; the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value being the distance between the first end of the second winding and the second end of the second winding; by improving the specific structure of the first transformer, not only can the area occupied by the first transformer be reduced, but the flexibility of the first transformer layout on the substrate can also be improved, thereby ensuring the integration of the RF front-end module while meeting the performance and area requirements of the RF front-end module. Attached Figure Description

[0007] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0008] Figure 1 This is a schematic diagram of the structure of a radio frequency front-end module in one embodiment of the present invention;

[0009] Figure 2 This is another structural schematic diagram of the radio frequency front-end module in one embodiment of the present invention;

[0010] Figure 3 This is a circuit diagram of a radio frequency front-end module in one embodiment of the present invention;

[0011] Figure 4 This is another circuit diagram of the radio frequency front-end module in one embodiment of the present invention;

[0012] Figure 5 This is another circuit diagram of the radio frequency front-end module in one embodiment of the present invention;

[0013] Figure 6 This is another circuit diagram of the radio frequency front-end module in one embodiment of the present invention;

[0014] Figure 7 This is another circuit diagram of the radio frequency front-end module in one embodiment of the present invention;

[0015] Figure 8 This is another circuit diagram of the radio frequency front-end module in one embodiment of the present invention;

[0016] Figure 9 This is another circuit diagram of the radio frequency front-end module in one embodiment of the present invention;

[0017] Figure 10 This is another circuit diagram of the radio frequency front-end module in one embodiment of the present invention;

[0018] Figure 11 This is another circuit diagram of the radio frequency front-end module in one embodiment of the present invention;

[0019] Figure 12 This is another circuit diagram of the radio frequency front-end module in one embodiment of the present invention.

[0020] In the figure, 10 is the first amplification unit; 20 is the first amplification unit; 30 is the third amplification unit; 200 is the substrate; 100 is the first RF chip; 101 is the second RF chip; 11 is the first transformer; 21 is the first output matching circuit; 31 is the first transformer; 111 is the first winding; 112 is the second winding; 311 is the third winding; 312 is the fourth winding; 40 is the first post-stage chip; 50 is the second post-stage chip; 401 is the first post-stage circuit; 402 is the second post-stage circuit; L1 is the first inductor; C1 is the first capacitor; and L2 is the second inductor. Detailed Implementation

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] It should be understood that the invention can be embodied in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0023] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this invention, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0024] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0025] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. When used herein, the singular forms “a,” “an,” and “ / the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “comprising,” when used in this specification, identify the presence of features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0026] To fully understand this invention, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by this invention. Preferred embodiments of the invention are described in detail below; however, in addition to these detailed descriptions, the invention may have other embodiments.

[0027] This embodiment provides a radio frequency (RF) front-end module. An RF front-end module integrates two or more discrete components, such as RF switches, low-noise amplifiers, filters, duplexers, power amplifiers, and transformers, into a single independent module, thereby improving integration and hardware performance while miniaturizing its size. Specifically, the RF front-end module can be applied to communication devices such as smartphones, tablets, and smartwatches.

[0028] In at least one embodiment, the radio frequency (RF) front-end module is capable of supporting 4G (fourth-generation mobile communication) standards, 5G (fifth-generation mobile communication) standards, etc. The 4G standard is, for example, the 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The RF front-end module in this embodiment is capable of supporting carrier aggregation and dual connectivity. Carrier aggregation and dual connectivity refer to communication using multiple frequency bands of radio waves simultaneously. For example, the RF front-end module can simultaneously support communication using signals from a frequency band specified by 4G and signals from another frequency band specified by 4G, or the RF front-end module can simultaneously support communication using signals from a frequency band specified by 4G and signals from another frequency band specified by 5G.

[0029] A radio frequency front-end module includes a substrate 200, a first amplification unit 10, a second amplification unit 20, a first transformer 11, and a first output matching circuit 21 disposed on the substrate 200; the output terminal of the first amplification unit 10 is connected to the first transformer 11, and the output terminal of the second amplification unit 20 is connected to the first output matching circuit 21.

[0030] The first transformer 11 includes a first winding 111 and a second winding 112 coupled to each other. The first winding includes a first main wire connected between a first end and a second end of the first winding. The second winding includes a first secondary wire connected between a first end and a second end of the second winding. The first main wire and the first secondary wire are arranged sequentially. The distance between the first end of the first winding and the first end of the second winding is less than a first value, which is the distance between the first end and the second end of the first winding. The distance between the second end of the first winding and the second end of the second winding is less than a second value, which is the distance between the first end and the second end of the second winding.

[0031] In at least one embodiment, such as Figure 1 As shown, the first amplification unit 10 and the second amplification unit 20 can be integrated on the same chip (e.g., the first radio frequency chip 100), and the first radio frequency chip 100 is disposed on the substrate. Figure 3 As shown, the first amplification unit 10 and the second amplification unit 20 can also be disposed on two different chips. For example, the first amplification unit 10 can be disposed on the first RF chip 100, and the second amplification unit 20 can be disposed on the second RF chip 101. The first RF chip 100 and the second RF chip 101 can be disposed on a substrate. Alternatively, the second amplification unit 10 and the second RF chip 20 can also be directly disposed on the substrate. Optionally, the first RF chip 100 and the second RF chip 101 can be manufactured based on GaAs (gallium arsenide) technology or CMOS (complementary metal-oxide-semiconductor) technology, etc. This embodiment does not specifically limit the manufacturing process of the first RF chip 100 and the second RF chip 101.

[0032] Understandably, the first amplification unit 10 and the second amplification unit 20 can be any amplification stage in the RF front-end module. For example, when the RF front-end module includes a driver amplification unit and an output amplification unit, the first amplification unit 10 and the second amplification unit 20 in this embodiment can be any amplification stage (i.e., driver stage or output stage) in the RF front-end module.

[0033] In at least one embodiment, the first amplification unit 10 can be an amplification unit composed of at least one power amplification transistor. For example, the power amplification transistor can be any type of transistor such as a bipolar junction transistor (BJT), a metal-oxide-semiconductor field-effect transistor (MOSFET). The first amplification unit 10 can be any type of amplification unit such as a single-ended amplification unit, a differential amplification unit, a Dougherty power amplification unit, or a balanced power amplification unit. Similarly, the second amplification unit 20 can be an amplification unit composed of at least one power amplification transistor. For example, the power amplification transistor can be any type of transistor such as a BJT, a MOSFET, or a MOSFET. The second amplification unit 20 can be any type of amplification unit such as a single-ended amplification unit, a differential amplification unit, a Dougherty power amplification unit, or a balanced power amplification unit.

[0034] In at least one embodiment, the first amplification unit 10 and the second amplification unit 20 are circuits for amplifying radio frequency signals of different frequency bands. This embodiment does not specifically limit the frequency band range of the radio frequency signals amplified by the first amplification unit or the frequency band range of the radio frequency signals amplified by the second amplification unit.

[0035] In at least one embodiment, the first transformer 11 is connected to the output terminal of the radio frequency amplification unit as an example. The first main line of the first winding 111 and the first secondary line of the second winding 112 are arranged sequentially, meaning the extension direction of the first main line from the first end to the second end of the first winding 111 is the same as the extension direction of the first secondary line from the first end to the second end of the second winding 112. The extension direction can be any angle and shape. For example, if the first main line of the first winding 111 is straight, then the first secondary line of the second winding 112 is also straight. Or, if the first main line of the first winding 111 is L-shaped, then the first secondary line of the second winding 112 is also L-shaped. Or, if the first main line of the first winding 111 is arc-shaped, then the first secondary line of the second winding 112 is also arc-shaped. It should be noted that this embodiment does not specifically limit the shape of the first main line of the first winding 11 and the first primary line of the second winding 12, but only requires that the first main line and the first primary line be arranged to follow each other.

[0036] In at least one embodiment, the distance between the first end of the first winding 111 and the first end of the second winding 112 is less than a first value, the first value being the distance between the first end of the first winding 111 and the second end of the first winding 111, and the distance between the second end of the first winding 111 and the second end of the second winding 112 is less than a second value, the second value being the distance between the first end of the second winding 112 and the second end of the second winding 112.

[0037] Wherein, the first value is the straight-line distance between the first end and the second end of the first winding 111, and the second value is the straight-line distance between the first end and the second end of the second winding 112. As an example, when the first main wire of the first winding 111 is arranged in a straight line, the distance between the first end and the second end of the first winding 111 is equal to the length of the first main wire. Similarly, when the secondary wire of the second winding 112 is arranged in a first straight line, the distance between the first end and the second end of the second winding 112 is equal to the length of the first secondary wire.

[0038] In at least one embodiment, since the first main line and the secondary line are arranged to follow each other, the first end of the first winding is adjacent to the first end of the second winding, and the second end of the first winding is adjacent to the second end of the second winding. Specifically, in this embodiment, the distance between the first end of the first winding and the first end of the second winding is less than the distance between the first end of the first winding and the second end of the first winding, and the distance between the second end of the first winding and the second end of the second winding is less than the distance between the first end of the second winding and the second end of the second winding. This embodiment, while ensuring the coupling degree between the first main line of the first winding and the first secondary line of the second winding, allows for flexible setting of the positions of the two ports of the first winding and the two ports of the second winding. Furthermore, since the radii of the first winding and the second winding are infinitely large under this implementation, the Q value (quality factor) of the first transformer can be improved. In addition, since the first main line and the first secondary line are arranged to follow each other, no additional jumpers are introduced, resulting in lower losses and a smaller footprint.

[0039] In at least one embodiment, the first output matching circuit may be a matching circuit consisting of at least one capacitor and at least one inductor connected in series and / or in parallel, or it may be any conventional type of transformer. This embodiment does not arbitrarily limit the specific structure of the first output matching circuit.

[0040] In at least one embodiment, the first amplification unit 10 includes a first amplification transistor, a first end of the first winding is connected to the first amplification transistor, and a second end of the first winding is configured to be connected to a ground terminal or a power supply terminal. As an example, the second end of the first winding is configured to be connected to a ground terminal. Other passive components (e.g., capacitors) can be connected along the path between the first amplification transistor and the second end of the first winding to participate in impedance matching with the first transformer, thereby improving the impedance transformation flexibility of the first amplification unit 10. As another example, the second end of the first winding is configured to be connected to a power supply terminal. The power supply voltage of the power supply terminal is transmitted to the first amplification transistor through the first winding to power the first amplification transistor and ensure its normal operation. By utilizing the first winding to transmit the power supply voltage from the power supply terminal to the first amplification transistor, without the need for an additional power supply inductor connected to the power supply terminal, the number of components can be reduced, thereby reducing the overall footprint.

[0041] In this embodiment, the radio frequency front-end module includes a substrate, a first amplification unit, a second amplification unit, a first transformer, and a first output matching circuit; the first amplification unit, the second amplification unit, the first transformer, and the first output matching circuit are disposed on the substrate; the output terminal of the first amplification unit is connected to the first transformer, and the output terminal of the second amplification unit is connected to the first output matching circuit; wherein, the first transformer includes a first winding and a second winding coupled to each other, the first winding including a first main wire connected between a first end and a second end of the first winding; the second winding including a first secondary wire connected between a first end and a second end of the second winding, the first main wire... The line and the first-stage line are arranged to follow each other; the distance between the first end of the first winding and the first end of the second winding is less than a first value, the first value being the distance between the first end of the first winding and the second end of the first winding; the distance between the second end of the first winding and the second end of the second winding is less than a second value, the second value being the distance between the first end of the second winding and the second end of the second winding; by improving the specific structure of the first transformer, not only can the area occupied by the first transformer be reduced, but the flexibility of the first transformer layout on the substrate can also be improved, thereby ensuring the integration of the RF front-end module while meeting the performance and area requirements of the RF front-end module.

[0042] In one specific embodiment, the RF front-end module further includes a first post-stage circuit 401 and a second post-stage circuit 402; the output terminal of the first transformer 11 is connected to the first post-stage circuit 401, and the output terminal of the first output matching circuit 21 is connected to the second post-stage circuit 402; the first winding and the second winding are disposed between the output terminal of the first amplification unit 10 and the first post-stage circuit 401; the first output matching circuit 21 is disposed between the output terminal of the second amplification unit 20 and the second post-stage circuit 402.

[0043] In at least one embodiment, such as Figure 2 As shown, the first post-stage circuit 401 and the second post-stage circuit 402 can be integrated on the same chip (e.g., the first post-stage chip 40), and the first post-stage chip 40 is disposed on the substrate 200. Figure 1 As shown, the first post-stage circuit 401 and the second post-stage circuit 402 can also be directly disposed on the substrate. Alternatively, the first post-stage circuit 401 and the second post-stage circuit 402 can be disposed on two different chips.

[0044] In at least one embodiment, the first downstream circuit 401 and the second downstream circuit 402 can be circuits composed of at least one switching unit, circuits composed of a filter, or circuits composed of other passive components. The output terminal of the first transformer 11 can be directly or indirectly connected to the first downstream circuit 401, and the output terminal of the first output matching circuit 21 can be directly or indirectly connected to the second downstream circuit 402. For example, the output terminal of the first transformer 11 is connected to the first downstream circuit 401 through other passive components, and the output terminal of the first output matching circuit 21 is connected to the second downstream circuit 402 through other passive components.

[0045] In this embodiment, the radio frequency front-end module further includes a first post-stage circuit and a second post-stage circuit;

[0046] The output terminal of the first transformer is connected to the first subsequent stage circuit, and the output terminal of the first output matching circuit is connected to the second subsequent stage circuit. The first winding and the second winding are disposed between the output terminal of the first amplification unit and the first subsequent stage circuit. The first output matching circuit is disposed between the output terminal of the second amplification unit and the second subsequent stage circuit. By distributing the first winding and the second winding between the output terminal of the first amplification unit and the first subsequent stage circuit, and distributing the first output matching circuit between the output terminal of the second amplification unit and the second subsequent stage circuit, the signal transmission path of the RF front-end module can be optimized, the redundancy and complexity of signal routing can be reduced, and unnecessary losses caused by excessive routing can be avoided, thereby meeting the performance and area requirements of the RF front-end module.

[0047] In one specific embodiment, the radio frequency front-end module further includes a first post-stage chip 40 disposed on the substrate, wherein the first post-stage circuit 401 and the second post-stage circuit 402 are integrated on the first post-stage chip. Figure 2 As shown, by integrating the first post-stage circuit 401 and the second post-stage circuit 402 onto the first post-stage chip 40, the integration density of the circuit can be improved.

[0048] In at least one embodiment, the first end of the second winding 112 is grounded, and the second end of the second winding 112 is connected to the first post-stage circuit 401 through the first input terminal of the first post-stage chip 40, with the second end of the second winding 112 being disposed adjacent to the first input terminal of the first post-stage chip 40; the output terminal of the first output matching circuit 21 is connected to the second post-stage circuit 402 through the second input terminal of the first post-stage chip 40; and the output terminal of the first output matching circuit 21 is disposed adjacent to the second input terminal of the first post-stage chip.

[0049] In at least one embodiment, the first input terminal of the first post-stage chip 40 can be implemented by a first pad, and the second input terminal of the first post-stage chip 40 can be implemented by a second pad.

[0050] In at least one embodiment, the first post-stage chip 40 may be a chip integrating at least one switching device, or a chip integrating at least one filter circuit, etc. The first post-stage chip may be a chip manufactured using any of the existing manufacturing processes. As an example, the first post-stage chip is an SOI (Silicon on Insulating Substrate) chip, meaning that the first post-stage chip is manufactured using SOI (Silicon on Insulating Substrate) manufacturing technology.

[0051] In this embodiment, since the second end of the second winding 112 is connected to the first post-stage circuit 401 through the first input terminal of the first post-stage chip 40, and the output terminal of the first output matching circuit 21 is connected to the second post-stage circuit 402 through the second input terminal of the first post-stage chip 40, by setting the second end of the second winding 112 close to the first input terminal of the first post-stage chip 40, and setting the output terminal of the first output matching circuit 21 close to the second input terminal of the first post-stage chip, the signal transmission path of the RF front-end module can be further optimized, the trace length when the second end of the second winding 112 is connected to the first post-stage circuit 401 can be reduced, and the trace length when the output terminal of the first output matching circuit 21 is connected to the second post-stage circuit 402 can be reduced, thereby avoiding redundancy and cumbersome signal traces.

[0052] In one specific embodiment, the distance between the second end of the second winding and the first input terminal of the first post-stage chip is less than the distance between the second end of the second winding and the second input terminal of the first post-stage chip; the distance between the output terminal of the first output matching circuit and the second input terminal of the first post-stage chip is less than the distance between the output terminal of the first output matching circuit and the first input terminal of the first post-stage chip.

[0053] Understandably, the distance between the second end of the second winding and the first input terminal of the first post-stage chip is the straight-line distance between the second end of the second winding and the first input terminal of the first post-stage chip, and the distance between the second end of the second winding and the second input terminal of the first post-stage chip is the straight-line distance between the second end of the second winding and the second input terminal of the first post-stage chip. Similarly, the distance between the output terminal of the first output matching circuit and the second input terminal of the first post-stage chip is the straight-line distance between the output terminal of the first output matching circuit and the second input terminal of the first post-stage chip, and the distance between the output terminal of the first output matching circuit and the first input terminal of the first post-stage chip is the straight-line distance between the output terminal of the first output matching circuit and the first input terminal of the first post-stage chip.

[0054] In this embodiment, by limiting the distance between the second end of the second winding and the first input terminal of the first post-stage chip to be less than the distance between the second end of the second winding and the second input terminal of the first post-stage chip, and by limiting the distance between the output terminal of the first output matching circuit and the second input terminal of the first post-stage chip to be less than the distance between the output terminal of the first output matching circuit and the first input terminal of the first post-stage chip, the trace length when connecting the second end of the second winding and the first input terminal of the first post-stage chip, and the trace length when connecting the output terminal of the first output matching circuit and the second input terminal of the first post-stage chip are reduced, thereby better ensuring the overall integration of the RF front-end module.

[0055] In one specific embodiment, the extension direction of the first virtual straight line where the output terminal of the first amplification unit is located is the same as the extension direction of the second virtual straight line where the first input terminal of the first post-stage chip is located, and the extension direction of the first main line from the first end to the second end of the first winding is the same as the extension direction of the first virtual straight line, and the extension direction of the first post-stage line from the first end to the second end of the second winding is the same as the extension direction of the second virtual straight line.

[0056] In at least one embodiment, when the extension direction of the first virtual straight line where the output terminal of the first amplification unit is located is the same as the extension direction of the second virtual straight line where the first input terminal of the first post-stage chip is located, by making the extension direction of the first main line from the first end to the second end of the first winding the same as the extension direction of the first virtual straight line, and the extension direction of the first stage line from the first end to the second end of the second winding the same as the extension direction of the second virtual straight line, it is also made that the extension directions of the first main line and the first stage line are the same. For example, the first main line and the first stage line are arranged in a straight line, thereby reducing the area occupied by the first transformer on the substrate and improving the flexibility of the layout of the first transformer.

[0057] It should be noted that the extension direction of the virtual line in this embodiment can be a horizontal extension direction, a vertical extension direction, or an extension direction at any other angle. This embodiment does not specifically limit the extension direction of the virtual line.

[0058] In one specific embodiment, reference is made to the following Figure 5 As shown, the RF front-end module further includes a first RF chip 100 disposed on the substrate 200. The first amplification unit 10 and the second amplification unit 20 are both integrated on the first RF chip 100. The output terminals of the first amplification unit 10 and the second amplification unit 20 are both disposed on the second side of the first RF chip, and the second side of the first RF chip is disposed along a first direction. The first input terminal and the second input terminal of the first post-stage chip are both disposed on the first side of the first post-stage chip, and the first side of the first post-stage chip is disposed along a first direction. The first side of the first post-stage chip is adjacent to the second side of the first RF chip.

[0059] The first radio frequency chip may be manufactured using GaAs (gallium arsenide) technology or CMOS (complementary metal oxide semiconductor) technology, etc. This embodiment does not specifically limit the manufacturing process of the first radio frequency chip 100.

[0060] Optionally, the first direction is a vertical direction and the second direction is a horizontal direction, or the first direction is a horizontal direction and the second direction is a vertical direction. The second direction intersects with the first direction. For example, the horizontal direction can be the length direction of the substrate, and the vertical direction can be the width direction of the substrate. It should be noted that in this embodiment, the horizontal and vertical directions include, but are not limited to, being perpendicular to each other, i.e., the angle at which the first and second directions intersect is, but is not limited to, 90 degrees. For example, the angle at which the first and second directions intersect can also be 80 degrees, 100 degrees, 120 degrees, 130 degrees, etc., as long as the first and second directions intersect. The angle at which the first and second directions intersect can be the angle formed by the direct connection of two connected segments, or it can be an arc angle formed by a short arc connection.

[0061] As a specific embodiment, this embodiment takes the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction, as an example for illustrative explanation.

[0062] For reference Figure 5As shown, the output terminals of the first amplification unit 10 and the second amplification unit 20 are both located on the second side of the first RF chip. For example, the second side of the first RF chip is the right side in the vertical direction of the first RF chip. The first input terminal and the second input terminal of the first post-stage chip are both located on the first side of the first post-stage chip. For example, the first side of the first post-stage chip is the left side in the vertical direction of the first post-stage chip. The first side of the first post-stage chip and the second side of the first RF chip are adjacent to each other, thereby optimizing the layout and routing of the first winding and the second winding on the substrate while ensuring the integration of the RF front-end module.

[0063] It should be noted that this embodiment does not specifically limit the relative positions of the first RF chip and the first post-stage chip on the substrate. The first post-stage chip can be located in any area above, below, or directly to the right of the first RF chip. Understandably, the terms "right" and "right side" mentioned in this embodiment refer to the right side relative to the first RF chip.

[0064] In one specific embodiment, reference is made to the following Figures 1 to 4 As shown, the first amplification unit is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] frequency band; both the first main line and the first primary line are arranged in a straight line.

[0065] In at least one embodiment, when the amplification unit is configured to support the transmission of higher frequency radio frequency signals, the inductance of the first main line and the inductance of the first secondary line can be relatively small. In this embodiment, the output terminals of the first amplification unit 10 and the second amplification unit 20 are both located on the same side (second side) of the first radio frequency chip 100, and the first input terminal and the second input terminal of the first post-stage chip 40 are also located on the same side (first side) of the first post-stage chip 40. Furthermore, when the second side of the first radio frequency chip 100 is adjacent to the first side of the first post-stage chip 40, and the first amplification unit is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] frequency band, the first main line and the first secondary line are both arranged in a straight line. When the first main line and the first secondary line are arranged in a straight line, the area occupied on the substrate is smaller, and the layout flexibility is greater. This ensures better integration of the overall radio frequency front-end module while maintaining signal transmission quality.

[0066] Understandably, the wider the frequency band of the radio frequency signal supported by the first amplification unit, the smaller the inductance required for the first main line and the first primary stage line. Conversely, the narrower the frequency band of the radio frequency signal supported by the first amplification unit, the larger the inductance required for the first main line and the first primary stage line.

[0067] In one specific embodiment, reference is made to the following Figure 6 As shown, the first amplification unit is configured to support

[0068] The transmission of radio frequency signals in the [600MHz, 2000MHz] frequency band. The first winding 111 includes a first connecting segment, a second connecting segment, and a third connecting segment connected in series. The angle between two adjacent connecting segments is a first angle. Preferably, the first angle is greater than or equal to 90°, thereby avoiding the antenna effect at sharp points and preventing signal discontinuity at corners. The first angle can be the angle formed by directly connecting two adjacent connecting segments, or it can be an arc angle formed by connecting them with a short arc. For example, the angle between the first and second connecting segments can be any angle such as 90°, 120°, 135°, or 150°, and the angle between the second and third connecting segments can be 90°, 120°, or 135°.

[0069] Or any angle, such as 150°.

[0070] The second winding 112 includes a fourth connecting segment, a fifth connecting segment, and a sixth connecting segment connected in series; the angle between two adjacent connecting segments is a second angle. Preferably, the second angle is greater than or equal to 90°, thereby avoiding the antenna effect at sharp points and preventing signal discontinuity at corners. The second angle can be the angle formed by directly connecting two adjacent connecting segments, or it can be an arc angle formed by connecting them with a short arc. For example, the angle between the fourth and fifth connecting segments can be any angle such as 90°, 120°, 135°, or 150°, and the angle between the fifth and sixth connecting segments can be any angle such as 90°, 120°, 135°, or 150°.

[0071] In this embodiment, when the first amplification unit is configured to support the transmission of radio frequency signals in the [600MHz, 2000MHz] frequency band, the first winding 111 includes a first connecting segment, a second connecting segment, and a third connecting segment connected in series, with the angle between two adjacent connecting segments being a first angle; the second winding 112 includes a fourth connecting segment, a fifth connecting segment, and a sixth connecting segment connected in series, with the angle between two adjacent connecting segments being a second angle; thereby, not only can the area utilization rate of the first transformer be improved, but the inductance of the first winding and the second winding can also be increased within a limited area, thereby further improving the overall performance of the radio frequency power amplifier.

[0072] In at least one embodiment, the first winding includes two first primary windings connected in parallel, and the second winding includes a first primary winding disposed between the two first primary windings. Alternatively, the second winding includes two first primary windings connected in parallel, and the first winding includes a first primary winding disposed between the two first primary windings.

[0073] For reference Figure 6 As shown, by dividing the first winding into two first main lines connected in parallel and placing the first main line between the two first main lines, the turns ratio between the first winding and the second winding can be flexibly adjusted while ensuring the coupling degree between the first winding and the second winding.

[0074] Understandably, the first winding includes, but is not limited to, two first primary windings connected in parallel, and the second winding includes, but is not limited to, one primary winding; the first winding may also include three or four primary windings, etc. The second winding may also include two or three primary windings, etc. The more primary windings connected in parallel in the first winding, the smaller the equivalent inductance of the first winding. The more secondary windings connected in parallel in the second winding, the smaller the equivalent inductance of the second winding. The number of primary windings connected in parallel in the first winding and the number of primary windings connected in parallel in the second winding can be set according to actual conditions. In this embodiment, to ensure the coupling between the first winding and the second winding, the primary windings connected in parallel in the first winding and the primary windings connected in parallel in the second winding are spaced apart.

[0075] In one specific embodiment, the first main line and the first primary line are coupled at the same layer, or the first main line and the first primary line are coupled at different layers.

[0076] In one specific embodiment, reference is made to the following Figure 6 As shown, the first connecting segment extends horizontally away from the first RF chip, the second connecting segment extends vertically, and the third connecting segment extends horizontally away from the first RF chip. That is, the angle between any two adjacent connecting segments in the first, second, and third connecting segments is 90 degrees; the first winding is arranged in a Z-shape. The fourth connecting segment extends horizontally away from the first RF chip, the fifth connecting segment extends vertically, and the sixth connecting segment extends horizontally away from the first RF chip. That is, the angle between any two adjacent connecting segments in the fourth, fifth, and sixth connecting segments is 90 degrees, and the second winding can be arranged in a Z-shape.

[0077] In this embodiment, with the output terminals of the first amplification unit 10 and the second amplification unit 20 both located on the same side (second side) of the first RF chip 100, and the first and second input terminals of the first post-stage chip 40 also located on the same side (first side) of the first post-stage chip 40, and the second side of the first RF chip 100 being adjacent to the first side of the first post-stage chip 40, by extending the first connecting segment along a horizontal direction away from the first RF chip, the second connecting segment along a vertical direction, the third connecting segment along a horizontal direction away from the first RF chip, the fourth connecting segment along a horizontal direction away from the first RF chip, the fifth connecting segment along a vertical direction, and the sixth connecting segment along a horizontal direction away from the first RF chip, not only can signal discontinuity at corners be avoided and the area utilization of the first transformer be improved, but the inductance of the first winding and the second winding can also be increased within a limited area, thereby further improving the overall performance of the RF power amplifier.

[0078] In one specific embodiment, reference is made to the following Figure 5 As shown, the output terminals of the first amplification unit 10 and the second amplification unit 20 are both disposed on the second side of the first RF chip 100, and the second side of the first RF chip 100 is disposed along a first direction; the first input terminal of the first post-stage chip 40 is disposed on the third side of the first post-stage chip 40, and the third side of the first post-stage chip 40 is disposed along a second direction; the second input terminal of the first post-stage chip 40 is disposed on the first side of the first post-stage chip 40, and the first side of the first post-stage chip 40 is disposed along a first direction; wherein, the first side of the first post-stage chip 40 is disposed adjacent to the second side of the first RF chip 100, and the first direction and the second direction intersect.

[0079] As a specific embodiment, this embodiment takes the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction, as an example for illustrative explanation. The output terminals of the first amplification unit 10 and the second amplification unit 20 are both located on the same side of the first RF chip 100, and the first input terminal and the second input terminal of the first post-stage chip 40 are respectively located on different sides of the first post-stage chip 40. As an example, the output terminals of the first amplification unit 10 and the second amplification unit 20 are both located on the second side (e.g., the right side) of the width direction of the first RF chip 100. The first input terminal of the first post-stage chip 40 is located on the third side (e.g., the upper side) in the length direction of the first post-stage chip 40, and the second input terminal of the first post-stage chip 40 is located on the first side (e.g., the left side) in the width direction of the first post-stage chip 40. This not only reduces the mutual interference between radio frequency signals of different frequency bands input to the first and second input terminals of the first post-stage chip 40, but also optimizes the wiring layout when connecting the first transformer and the first post-stage chip 40 while ensuring the integration of the radio frequency front-end module.

[0080] In one specific embodiment, the first amplification unit is configured to support the transmission of radio frequency signals in the [1500MHz, 3000MHz] frequency band; the first main line includes a first main connection segment and a second main connection segment connected in series, the first main connection segment extending from a first end of the first winding along a second direction, and the second main connection segment extending along a first direction to a second end of the first winding; the first primary line includes a first connection segment and a second connection segment connected in series, the first connection segment extending from a first end of the second winding along a second direction, and the second connection segment extending along a first direction to a second end of the second winding.

[0081] In this embodiment, the first direction is vertical and the second direction is horizontal, or the first direction is horizontal and the second direction is vertical. The second direction intersects the first direction. For example, the horizontal direction can be the length direction of the substrate, and the vertical direction can be the width direction of the substrate. It should be noted that the horizontal and vertical directions in this embodiment include, but are not limited to, being perpendicular to each other, i.e., the angle at which the first and second directions intersect is not limited to 90 degrees. For example, the angle at which the first and second directions intersect can also be 80 degrees, 100 degrees, 120 degrees, 130 degrees, etc., as long as the first and second directions intersect. The angle at which the first and second directions intersect can be the angle formed by the direct connection of two connected segments, or it can be an arc angle formed by a short arc connection.

[0082] As a specific embodiment, this embodiment uses the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction for illustrative purposes. The first main connecting segment extends from the first end of the first winding along the second direction, and the second main connecting segment extends along the first direction to the second end of the first winding. That is, the first main connecting segment extends along the horizontal direction of the substrate, and the second main connecting segment extends along the vertical direction of the substrate. The angle between the first main connecting segment and the second main connecting segment is 90 degrees, and the first winding is arranged in an L-shape. The first connecting segment extends from the first end of the second winding along the second direction, and the second connecting segment extends along the first direction to the second end of the second winding. That is, the first connecting segment extends along the horizontal direction of the substrate, and the second connecting segment extends along the vertical direction of the substrate. The angle between the first connecting segment and the second connecting segment is 90 degrees, and the second winding is arranged in an L-shape.

[0083] In this embodiment, the output terminals of the first amplification unit 10 and the second amplification unit 20 are both located on the second side (e.g., the right side) of the first RF chip 100 in the vertical direction. The first input terminal of the first post-stage chip 40 is located on the third side (e.g., the upper side) in the horizontal direction of the first post-stage chip 40, and the second input terminal of the first post-stage chip 40 is located on the first side (e.g., the left side) in the vertical direction of the first post-stage chip 40. By making the first main connection segment extend horizontally from the first end of the first winding, and the second main connection segment extend vertically to the second end of the first winding; the first connection segment extends horizontally from the first end of the second winding, and the second connection segment extends vertically to the second end of the second winding, not only can the area utilization rate of the first transformer be improved, but the inductance of the first winding and the second winding can also be increased within a limited area, thereby further improving the overall performance of the RF power amplifier.

[0084] In one specific embodiment, reference is made to the following Figure 12 As shown, the output terminal of the first amplification unit is disposed on the second side of the first radio frequency chip, and the output terminal of the second amplification unit is disposed on the fourth side of the first radio frequency chip. The second side of the first radio frequency chip is disposed along a first direction; the fourth side of the first radio frequency chip is disposed along a second direction.

[0085] The first input terminal of the first post-stage chip is disposed on the third side of the first post-stage chip, and the third side of the first post-stage chip is disposed along the second direction. The second input terminal of the first post-stage chip is disposed on the first side of the first post-stage chip, and the first side of the first post-stage chip is disposed along the first direction.

[0086] The first direction and the second direction intersect.

[0087] The first main line includes a first main connecting segment and a second main connecting segment connected in series. The first main connecting segment extends from the first end of the first winding along a second direction, and the second main connecting segment extends along a first direction to the second end of the first winding. The first primary line includes a first connecting segment and a second connecting segment connected in series. The first connecting segment extends from the first end of the second winding along a second direction, and the second connecting segment extends along a first direction to the second end of the second winding.

[0088] In one specific embodiment, the first output matching circuit includes a combination of at least one capacitor and at least one inductor connected in series and / or in parallel.

[0089] In one embodiment, the first output matching circuit includes a first capacitor C1, a first inductor L1, and a second inductor L2. The first terminal of the first capacitor C1 is connected to the second amplification unit and its output terminal, and the second terminal of the first capacitor C1 is connected to the second input terminal of the first post-stage chip 40. The first terminal of the first inductor L1 is connected to the first terminal of the first capacitor C1, and the second terminal of the first inductor L1 is grounded. The first terminal of the second inductor L2 is connected to the second terminal of the first capacitor C1, and the second terminal of the second inductor L2 is grounded. Preferably, the first capacitor C1, the first inductor L1, and the second inductor L2 can be mounted on a substrate in a surface-mount (SMD) configuration.

[0090] In this embodiment, the first output matching circuit includes a combination of at least one capacitor and at least one inductor connected in series and / or in parallel, thereby enabling impedance matching of low-frequency radio frequency signals and more flexible impedance adjustment within a limited area.

[0091] In at least one embodiment, the first amplification unit is configured to support the transmission of radio frequency signals in a first frequency band, and the second amplification unit is configured to support the transmission of radio frequency signals in a second frequency band, wherein the first frequency band is larger than the second frequency band. For example, the range of the first frequency band is [600MHz, 2000MHz], and the range of the second frequency band is (2000MHz, 7000MHz).

[0092] In at least one embodiment, when the first amplification unit is configured to support the transmission of higher frequency radio frequency signals, the implementation of the first transformer in the above embodiments not only ensures the transmission quality of the radio frequency signals but also allows for flexible configuration of the first transformer layout, further reducing losses and footprint. When the second amplification unit is configured to support the transmission of lower frequency radio frequency signals, the implementation of the first output matching circuit in the above embodiments allows for flexible impedance adjustment within a limited area.

[0093] In one specific embodiment, the radio frequency front-end module further includes a third amplification unit 30 and a second transformer 31 disposed on the substrate. The third amplification unit 30, the first amplification unit 10 and the second amplification unit 20 are arranged at intervals along a first direction, and the second transformer 31, the first transformer 11 and the first output matching circuit 21 are arranged at intervals along the first direction.

[0094] In at least one embodiment, the third amplification unit 30 can be integrated on the same chip as the first amplification unit 10 and the second amplification unit 20, or it can be disposed on a single chip, or it can be integrated on the same chip as the first amplification unit 10 or the second amplification unit 20. For example: the third amplification unit 30, the second amplification unit 20 and the first amplification unit 10 are all integrated on the first radio frequency chip; or, the third amplification unit 30 is integrated on the third radio frequency chip, the second amplification unit 20 is integrated on the second radio frequency chip, and the first amplification unit 10 is integrated on the first radio frequency chip; or, the third amplification unit 30 and the second amplification unit 10 are integrated on the second radio frequency chip, and the first amplification unit is integrated on the first radio frequency chip; or, the first amplification unit and the second amplification unit are integrated on the first radio frequency chip, and the third amplification unit 30 is integrated separately on the second radio frequency chip, etc.

[0095] As a specific embodiment, this embodiment takes the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction, as an example for illustrative explanation. Specifically, the third amplification unit, the second amplification unit, and the first amplification unit are arranged sequentially at intervals along the width direction of the substrate, and the second transformer, the first transformer, and the first output matching circuit are also arranged sequentially at intervals along the width direction of the substrate. This improves integration while optimizing the signal transmission path of the RF front-end module, reducing redundancy and complexity of signal traces, and thus avoiding unnecessary losses due to excessive traces, thereby meeting the performance and area requirements of the RF front-end module.

[0096] The output terminal of the third amplification unit 30 is connected to the second transformer 31. The second transformer includes a third winding and a fourth winding coupled to each other. The third winding includes a second main line connected between the first end of the third winding and the second end of the first winding. The fourth winding includes a second secondary line connected between the first end of the fourth winding and the second end of the second winding. The second main line and the second secondary line are arranged to follow each other. The distance between the first end of the third winding and the first end of the fourth winding is less than a third value, which is the distance between the first end of the third winding and the second end of the fourth winding. The distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, which is the distance between the first end of the fourth winding and the second end of the fourth winding.

[0097] In this embodiment, the second transformer 31 includes a third winding 311 and a fourth winding 312 coupled to each other. The second main line of the third winding 311 and the second secondary line of the fourth winding 312 are arranged to follow each other, that is, the extension direction of the second main line from the first end to the second end of the third winding is the same as the extension direction of the second secondary line from the first end to the second end of the fourth winding. The extension direction can be any angle and shape. For example, if the second main line of the third winding is straight, then the second secondary line of the fourth winding is also straight. Or, if the second main line of the third winding is L-shaped, then the second secondary line of the fourth winding is also L-shaped. Or, if the second main line of the third winding is arc-shaped, then the second secondary line of the fourth winding is also arc-shaped. It should be noted that this embodiment does not specifically limit the shape of the second main line and the second secondary line; it only needs to ensure that the first main line and the first secondary line are arranged to follow each other.

[0098] The distance between the first end of the third winding 311 and the first end of the fourth winding 312 is less than a third value, where the third value is the distance between the first end of the third winding and the second end of the fourth winding. The distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, where the fourth value is the distance between the first end of the fourth winding and the second end of the fourth winding. Specifically, the third value is the straight-line distance between the first end of the third winding and the second end of the third winding, and the fourth value is the straight-line distance between the first end of the fourth winding and the second end of the fourth winding.

[0099] This embodiment, while ensuring the coupling degree between the second main line of the third winding and the second secondary line of the fourth winding, allows for flexible setting of the positions of the two ports of the third winding and the two ports of the fourth winding. Furthermore, since the radii of the third winding and the fourth winding are infinitely large under this implementation, the Q value (quality factor) of the second transformer can be improved. In addition, since the second main line and the second secondary line are set to follow each other without introducing additional jumpers, the losses are also smaller and the area occupied is also smaller.

[0100] It should be noted that the specific implementation of the second transformer in this embodiment is similar to that of the first transformer in the above embodiment, and will not be described in detail here. The specific implementation of the third amplification unit 30 in this embodiment is similar to that of the second amplification unit 20 in the above embodiment, and will not be described in detail here.

[0101] In at least one embodiment, the third amplification unit, together with the first amplification unit 10 and the second amplification unit 20, constitutes a circuit for amplifying radio frequency signals in different frequency bands. This embodiment does not specifically limit the frequency band range of the radio frequency signals amplified by the third amplification unit, the second amplification unit, or the first amplification unit.

[0102] In this embodiment, when the first amplification unit, the second amplification unit, the third amplification unit, the first transformer, the second transformer, and the first output matching circuit are all integrated on the substrate, by adopting the implementation method of the first transformer and the second transformer in the above embodiment, and by arranging the third amplification unit, the second amplification unit, and the first amplification unit sequentially spaced along the first direction, and the second transformer, the first transformer, and the first output matching circuit sequentially spaced along the first direction, not only can the integration of the RF front-end module be improved, but the signal transmission path of the RF front-end module can also be optimized, reducing the redundancy and complexity of signal routing, making the layout of each amplification unit and component more compact and reasonable.

[0103] In one specific embodiment, the first amplification unit 10 is configured to support the transmission of radio frequency signals in a first frequency band; the first main line and the first secondary line are arranged in an L-shape; the second amplification unit is configured to support the transmission of radio frequency signals in a second frequency band; the first output matching circuit includes a series and / or parallel combination of at least one capacitor and at least one inductor; the third amplification unit is configured to support the transmission of radio frequency signals in a third frequency band; the second main line and the second secondary line are arranged in a straight line. The third frequency band is greater than the first frequency band, and the first frequency band is greater than the second frequency band.

[0104] In at least one embodiment, the larger the frequency band of the radio frequency signal amplified by the amplification unit, the smaller the inductance required for the transformer winding. Conversely, the smaller the frequency band of the radio frequency signal amplified by the amplification unit, the larger the inductance required for the transformer winding. Therefore, in this embodiment, the third amplification unit is configured to support the largest third frequency band of the radio frequency signal, the first amplification unit is configured to support the second largest first frequency band of the radio frequency signal, and the second amplification unit is configured to support the smallest second frequency band of the radio frequency signal. Thus, by arranging the second transformer connected to the third amplification unit in a linear configuration, the first transformer connected to the first amplification unit in an L-shaped configuration, and the first output matching circuit connected to the second amplification unit using a series and / or parallel combination with one less capacitor and at least one inductor, the integration of the radio frequency front-end module can be further improved, space utilization can be increased, and the layout of each amplification unit and component can be made more compact and reasonable.

[0105] In one specific embodiment, the first amplification unit is configured to support the transmission of radio frequency signals in a third frequency band; the first main line and the first stage line are arranged in a straight line, and the second amplification unit is configured to support the transmission of radio frequency signals in a second frequency band; the first output matching circuit includes a series and / or parallel combination of at least one capacitor and at least one inductor. The third amplification unit is configured to support the transmission of radio frequency signals in a first frequency band; the second main line and the second stage line are arranged in an L-shape; wherein the third frequency band is greater than the first frequency band, and the first frequency band is greater than the second frequency band.

[0106] In this embodiment, the first amplification unit is configured to support the largest third frequency band of the radio frequency signal, the third amplification unit is configured to support the second largest first frequency band of the radio frequency signal, and the second amplification unit is configured to support the smallest second frequency band of the radio frequency signal. Therefore, by making the second transformer connected to the first amplification unit linear, the first transformer connected to the third amplification unit L-shaped, and the first output matching circuit connected to the second amplification unit adopt a combination of series and / or parallel connection with one less capacitor and at least one inductor, the integration of the radio frequency front-end module can be further improved, the space utilization can be improved, and the layout of each amplification unit and component can be more compact and reasonable.

[0107] In one specific embodiment, the first amplification unit is configured to support the transmission of radio frequency signals in the range of [1500MHz, 3000MHz]; the first main line and the first stage line are arranged in an L-shape; the second amplification unit is configured to support the transmission of radio frequency signals in the range of [600MHz, 2000MHz]; the first output matching circuit includes a combination of at least one capacitor and at least one inductor connected in series and / or in parallel; the third amplification unit is configured to support the transmission of radio frequency signals in the range of [1700MHz, 7000MHz]; the second main line and the second stage line are arranged in a straight line, thereby further improving the integration of the radio frequency front-end module, improving space utilization, and making the layout of each amplification unit and component more compact and reasonable.

[0108] In one specific embodiment, the first amplification unit is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] band; the first main line and the first stage line are arranged in a straight line; the second amplification unit is configured to support the transmission of radio frequency signals in the [600MHz, 2000MHz] band; the first output matching circuit includes a combination of at least one capacitor and at least one inductor connected in series and / or in parallel. The third amplification unit is configured to support the transmission of radio frequency signals in the [1500MHz, 3000MHz] band; the second main line and the second stage line are arranged in an L-shape; thereby further improving the integration of the radio frequency front-end module, increasing space utilization, and making the layout of each amplification unit and component more compact and reasonable.

[0109] This embodiment also provides a radio frequency front-end module, including a substrate; a first amplification unit 10, a third amplification unit 30, a first transformer 11 and a second transformer 31 disposed on the substrate; the output terminal of the first amplification unit 10 is connected to the first transformer 11, and the output terminal of the third amplification unit 30 is connected to the second transformer 31.

[0110] The first transformer 11 includes a first winding 111 and a second winding 112 coupled to each other. The first winding includes a first main line connected between a first end and a second end of the first winding. The second winding includes a first secondary line connected between a first end and a second end of the second winding. The first main line and the first secondary line are arranged sequentially. The distance between the first end of the first winding and the first end of the second winding is less than a first value, where the first value is the distance between the first end and the second end of the first winding. The distance between the second end of the first winding and the second end of the second winding is less than a second value, where the second value is the distance between the first end and the second end of the second winding.

[0111] The second transformer 31 includes a third winding 311 and a third winding 312 coupled to each other. The third winding includes a second main line connected between the first end of the third winding and the second end of the first winding. The fourth winding includes a second secondary line connected between the first end of the fourth winding and the second end of the second winding. The second main line and the second secondary line are arranged in a mutually following manner. The distance between the first end of the third winding and the first end of the fourth winding is less than a third value, which is the distance between the first end of the third winding and the second end of the fourth winding. The distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, which is the distance between the first end of the fourth winding and the second end of the fourth winding.

[0112] The specific implementation methods of the first transformer 11 and the second transformer 31 in this embodiment are the same as those of the first transformer in the above embodiments, and will not be described redundantly here. The specific implementation methods of the first amplification unit and the third amplification unit in this embodiment are the same as those of the first amplification unit and the third amplification unit in the above embodiments, and will not be described redundantly here.

[0113] In at least one embodiment, the first amplification unit 10 and the third amplification unit 30 can be integrated on the same chip (e.g., a first radio frequency chip), with the first radio frequency chip disposed on a substrate. Alternatively, the first amplification unit 10 and the third amplification unit 30 can be disposed on two different chips; for example, the first amplification unit 10 can be disposed on a first radio frequency chip, and the third amplification unit 30 can be disposed on a second radio frequency chip, with both chips disposed on a substrate. Furthermore, the first amplification unit 10 and the third amplification unit 30 can also be directly disposed on the substrate.

[0114] In this embodiment, the radio frequency front-end module includes a substrate, a first amplification unit and a third amplification unit disposed on the substrate, a first transformer and a second transformer; by improving the specific implementation of the first transformer and the second transformer, not only can the area occupied by the first transformer and the second transformer be reduced, but the flexibility of the first transformer and the second transformer in the layout on the substrate can also be improved, thereby ensuring the integration of the radio frequency front-end module while meeting the performance and area requirements of the radio frequency front-end module.

[0115] In one specific embodiment, the radio frequency front-end module further includes a first post-stage circuit and a third post-stage circuit. The output terminal of the first transformer is connected to the first post-stage circuit, and the output terminal of the second transformer is connected to the third post-stage circuit. The first winding and the second winding are disposed between the output terminal of the first amplification unit and the first post-stage circuit. The third winding and the fourth winding are disposed between the output terminal of the third amplification unit and the third post-stage circuit.

[0116] In at least one embodiment, the first and third post-stage circuits can be integrated on the same chip (e.g., the second post-stage chip 50), which is disposed on a substrate. Alternatively, the first and third post-stage circuits can be directly disposed on the substrate. Or, the first and third post-stage circuits can be disposed on two different chips.

[0117] In at least one embodiment, the first and third subsequent stage circuits can be circuits composed of at least one switching unit, circuits composed of a filter, or circuits composed of other passive components. The output terminal of the first transformer 11 can be directly or indirectly connected to the first subsequent stage circuit, and the output terminal of the second transformer can be directly or indirectly connected to the third subsequent stage circuit. For example, the output terminal of the first transformer 11 is connected to the first subsequent stage circuit through other passive components, and the output terminal of the second transformer is connected to the third subsequent stage circuit through other passive components.

[0118] In this embodiment, the radio frequency front-end module further includes a first post-stage circuit and a third post-stage circuit;

[0119] The output terminal of the first transformer is connected to the first subsequent stage circuit, and the output terminal of the second transformer is connected to the third subsequent stage circuit. The first winding and the second winding are disposed between the output terminal of the first amplification unit and the first subsequent stage circuit. The third winding and the fourth winding are disposed between the output terminal of the second amplification unit and the third subsequent stage circuit. By distributing the first winding and the second winding between the output terminal of the first amplification unit and the first subsequent stage circuit, and distributing the third winding and the fourth winding between the output terminal of the second amplification unit and the third subsequent stage circuit, the signal transmission path of the RF front-end module can be optimized, the redundancy and complexity of signal routing can be reduced, and unnecessary losses caused by excessive routing can be avoided, thereby meeting the performance and area requirements of the RF front-end module.

[0120] In one specific embodiment, the RF front-end module further includes a second post-stage chip 50, on which the first post-stage circuit and the third post-stage circuit are integrated; by integrating the first post-stage circuit and the third post-stage circuit on the second post-stage chip 50, the integration level of the circuit can be improved.

[0121] In at least one embodiment, the first end of the second winding is grounded, and the second end of the second winding is connected to the first post-stage circuit through the first input terminal of the second post-stage chip; the first end of the fourth winding is grounded, and the second end of the fourth winding is connected to the third post-stage circuit through the second input terminal of the second post-stage circuit. The second end of the second winding is positioned adjacent to the first input terminal of the second post-stage chip; the second end of the fourth winding is positioned adjacent to the second input terminal of the second post-stage chip.

[0122] In at least one embodiment, the second post-stage chip can be a chip integrating at least one switching device, or a chip integrating at least one filter circuit, etc. The second post-stage chip can be a chip implemented using any of the manufacturing processes in the prior art. As an example, the second post-stage chip is an SOI (Silicon on Insulating Substrate) chip, that is, the second post-stage chip is implemented using SOI (Silicon on Insulating Substrate) manufacturing technology.

[0123] In this embodiment, by setting the second end of the second winding close to the first input terminal of the second post-stage chip, and setting the second end of the fourth winding close to the second input terminal of the second post-stage chip, the signal transmission path of the RF front-end module can be further optimized, the trace length when the second end of the second winding is connected to the first post-stage circuit and the trace length when the second end of the fourth winding is connected to the third post-stage circuit can be reduced, and the redundancy and cumbersomeness of signal traces can be avoided.

[0124] In at least one embodiment, the distance between the second end of the second winding and the first input terminal of the second post-stage chip is less than the distance between the second end of the second winding and the second input terminal of the second post-stage chip; the distance between the second end of the fourth winding and the second input terminal of the second post-stage chip is less than the distance between the second end of the fourth winding and the first input terminal of the second post-stage chip.

[0125] In this embodiment, by limiting the distance between the second end of the second winding and the first input terminal of the second post-stage chip to be less than the distance between the second end of the second winding and the second input terminal of the second post-stage chip, and the distance between the second end of the fourth winding and the second input terminal of the second post-stage chip to be less than the distance between the second end of the fourth winding and the first input terminal of the second post-stage chip, the wiring length when connecting the second end of the second winding 112 and the first input terminal of the second post-stage chip is relatively short, and the wiring length when connecting the second end of the output terminal of the fourth winding and the second input terminal of the second post-stage chip is also relatively short, thereby better ensuring the overall integration of the RF front-end module.

[0126] In one specific embodiment, the first amplification unit is configured to support the transmission of radio frequency signals in the [1500MHz, 3000MHz] frequency band; the first main line and the first stage line are arranged in an L-shape, and the third amplification unit is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] frequency band; the second main line and the second stage line are arranged in a straight line.

[0127] In at least one embodiment, the larger the frequency band of the radio frequency signal amplified by the amplification unit, the smaller the inductance required for the transformer winding. Conversely, the smaller the frequency band of the radio frequency signal amplified by the amplification unit, the larger the inductance required for the transformer winding. This embodiment further improves the integration of the radio frequency front-end module and increases space utilization by limiting the first amplification unit to support the transmission of radio frequency signals in the [1500MHz, 3000MHz] frequency band when it is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] frequency band, and by allowing the second main line and the second secondary line to be arranged in a straight line when it is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] frequency band. This makes the layout of the first amplification unit, the third amplification unit, the first transformer, and the second transformer more compact and reasonable.

[0128] In one specific embodiment, the output terminals of the first amplification unit and the second amplification unit are both disposed on the second side of the first radio frequency chip, and the second side of the first radio frequency chip is disposed along a first direction; the first input terminal of the first post-stage chip is disposed on the third side of the first post-stage chip, and the third side of the first post-stage chip is disposed along a second direction; the second input terminal of the first post-stage chip is disposed on the first side of the first post-stage chip, and the first side of the first post-stage chip is disposed along the first direction; wherein, the first side of the first post-stage chip and the second side of the first radio frequency chip are disposed adjacent to each other, and the first direction and the second direction intersect.

[0129] In one specific embodiment, the radio frequency front-end module further includes a second radio frequency chip disposed on the substrate, the first amplification unit and the third amplification unit are both integrated on the second radio frequency chip, the output terminal of the first amplification unit and the output terminal of the second amplification unit are both disposed on the second side of the second radio frequency chip, and the second side of the second radio frequency chip is disposed along a first direction;

[0130] The first input terminal of the second post-stage chip is disposed on the third side of the second post-stage chip, and the third side of the second post-stage chip is disposed along the second direction. The second input terminal of the second post-stage chip is disposed on the first side of the second post-stage chip, and the first side of the second post-stage chip is disposed along the first direction. The first side of the second post-stage chip is disposed adjacent to the second side of the second RF chip, and the first direction and the second direction intersect.

[0131] The second radio frequency chip can be manufactured using GaAs (gallium arsenide) technology or CMOS (complementary metal oxide semiconductor) technology, etc. This embodiment does not specifically limit the manufacturing process of the second radio frequency chip 100.

[0132] Optionally, the first direction is a vertical direction and the second direction is a horizontal direction, or the first direction is a horizontal direction and the second direction is a vertical direction. The second direction intersects with the first direction. For example, the horizontal direction can be the length direction of the substrate, and the vertical direction can be the width direction of the substrate. It should be noted that in this embodiment, the horizontal and vertical directions include, but are not limited to, being perpendicular to each other, i.e., the angle at which the first and second directions intersect is, but is not limited to, 90 degrees. For example, the angle at which the first and second directions intersect can also be 80 degrees, 100 degrees, 120 degrees, 130 degrees, etc., as long as the first and second directions intersect. The angle at which the first and second directions intersect can be the angle formed by the direct connection of two connected segments, or it can be an arc angle formed by a short arc connection.

[0133] As a specific embodiment, this embodiment takes the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction, as an example for illustrative explanation. The output terminals of the first amplification unit 10 and the third amplification unit 0 are both located on the second side of the second RF chip, for example, the second side of the second RF chip is the right side in the vertical direction of the second RF chip. The first input terminal and the second input terminal of the second post-stage chip are both located on the first side of the second post-stage chip, for example, the first side of the second post-stage chip is the left side in the vertical direction of the second post-stage chip. The first side of the second post-stage chip and the second side of the second RF chip are adjacent to each other, thereby optimizing the layout and routing of the first and second windings on the substrate, as well as the layout and routing of the third and fourth windings on the substrate, while ensuring the integration of the RF front-end module.

[0134] It should be noted that this embodiment does not specifically limit the relative positions of the second RF chip and the second post-stage chip on the substrate. The second post-stage chip can be located in any area above, below, or directly to the right of the second RF chip. Understandably, the terms "right" and "right side" mentioned in this embodiment refer to the right and right side relative to the second RF chip.

[0135] In one specific embodiment, the first main line includes a first main connecting segment and a second main connecting segment connected in series. The first main connecting segment extends from a first end of the first winding along a second direction, and the second main connecting segment extends along a first direction to a second end of the first winding. The first secondary line includes a first connecting segment and a second connecting segment connected in series. The first connecting segment extends from a first end of the second winding along a second direction, and the second connecting segment extends along a first direction to a second end of the second winding. The second main line extends from a first end of the first winding along a second direction to a second end of the third winding. The second secondary line extends from a first end of the fourth winding along a second direction to a second end of the fourth winding.

[0136] As a specific embodiment, this embodiment uses the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction for illustrative purposes. The first main connecting segment extends from the first end of the first winding along the second direction, and the second main connecting segment extends along the first direction to the second end of the first winding. That is, the first main connecting segment extends along the horizontal direction of the substrate, and the second main connecting segment extends along the vertical direction of the substrate. The angle between the first main connecting segment and the second main connecting segment is 90 degrees, and the first winding is arranged in an L-shape. The first connecting segment extends from the first end of the second winding along the second direction, and the second connecting segment extends along the first direction to the second end of the second winding. That is, the first connecting segment extends along the horizontal direction of the substrate, and the second connecting segment extends along the vertical direction of the substrate. The angle between the first connecting segment and the second connecting segment is 90 degrees, and the second winding is arranged in an L-shape. The second main line extends from the first end of the first winding along the second direction to the second end of the third winding; that is, the second main line extends along the horizontal direction of the substrate. The second secondary line extends from the first end of the fourth winding along the second direction to the second end of the fourth winding; that is, the second secondary line extends along the horizontal direction of the substrate. The third winding and the fourth winding are arranged in a straight line.

[0137] In this embodiment, by arranging the first and second windings of the first transformer in an L-shape on the substrate, and the third and fourth windings of the second transformer in a straight line on the substrate, the area occupied by the first and second transformers can be reduced, thus ensuring the integration of the RF front-end module while meeting the performance and area requirements of the RF front-end module.

[0138] In one specific embodiment, the output terminals of the first amplification unit and the third amplification unit are both disposed on the second side of the second RF chip, and the second side of the second RF chip is disposed along a first direction; the first input terminal of the second post-stage chip is disposed on the third side of the second post-stage chip, and the second input terminal of the second post-stage chip is disposed on the fourth side of the second post-stage chip, and the third side of the second post-stage chip is disposed along a second direction, and the fourth side of the second post-stage chip is disposed along a second direction, wherein the first direction and the second direction intersect.

[0139] As a specific embodiment, this embodiment uses the vertical direction as the first direction and the horizontal direction as the second direction, that is, the width direction of the substrate as the first direction and the length direction of the substrate as the second direction, as an example for illustrative explanation. The output terminals of the first amplification unit and the third amplification unit are both located on the second side of the second RF chip, for example, the second side of the second RF chip is the right side in the vertical direction of the second RF chip. The first input terminal of the second post-stage chip is located on the third side of the second post-stage chip, for example, the third side of the second post-stage chip is the upper side in the horizontal direction of the second post-stage chip; the second input terminal of the second post-stage chip is located on the fourth side of the second post-stage chip, for example, the fourth side of the second post-stage chip is the lower side in the horizontal direction of the second post-stage chip.

[0140] In this embodiment, the output terminals of the first amplification unit and the third amplification unit are both disposed on the second side of the second RF chip, and the second side of the second RF chip is disposed along a first direction; the first input terminal of the second post-stage chip is disposed on the third side of the second post-stage chip, and the second input terminal of the second post-stage chip is disposed on the fourth side of the second post-stage chip, and the third side of the second post-stage chip is disposed along a second direction, and the fourth side of the second post-stage chip is disposed along a second direction, with the first direction and the second direction intersecting; thereby, the inductance of the first winding and the second winding, as well as the inductance of the third winding and the fourth winding, can be increased within a limited area, thereby improving the overall performance of the RF power amplifier.

[0141] In one specific embodiment, the first main line includes a first main connecting segment and a second main connecting segment connected in series. The first main connecting segment extends from a first end of the first winding along a second direction, and the second main connecting segment extends along a first direction to a second end of the first winding. The first secondary line includes a first connecting segment and a second connecting segment connected in series. The first connecting segment extends from a first end of the second winding along a second direction, and the second connecting segment extends along a first direction to a second end of the second winding. That is, the first winding and the second winding are arranged in an L-shape.

[0142] The second main line includes a third main connecting segment and a fourth main connecting segment connected in series. The third main connecting segment extends from the first end of the third winding along the second direction, and the fourth main connecting segment extends along the first direction to the second end of the third winding. The second secondary line includes a third connecting segment and a fourth secondary connecting segment connected in series. The third connecting segment extends from the first end of the fourth winding along the second direction, and the fourth secondary connecting segment extends along the first direction to the second end of the fourth winding. That is, the third winding and the fourth winding are arranged in an L-shape.

[0143] In this embodiment, by arranging the first and second windings of the first transformer in an L-shape on the substrate, and the third and fourth windings of the second transformer in an L-shape on the substrate, the inductance of the first and second windings, as well as the inductance of the third and fourth windings, can be increased within a limited area. This ensures the integration of the RF front-end module while meeting the performance and area requirements of the RF front-end module.

[0144] In one specific embodiment, reference is made to the following Figure 11 As shown, the output terminal of the first amplification unit is disposed on the second side of the second RF chip, and the output terminal of the third amplification unit is disposed on the fourth side of the second RF chip. The second side of the second RF chip is disposed along a first direction; the fourth side of the second RF chip is disposed along a second direction; the first input terminal of the second post-stage chip is disposed on the third side of the second post-stage chip. The third side of the second post-stage chip is disposed along the second direction, and the second input terminal of the second post-stage chip is disposed on the first side of the second post-stage chip. The first side of the second post-stage chip is disposed along the first direction; wherein, the first direction and the second direction intersect.

[0145] The first main line includes a first main connecting segment and a second main connecting segment connected in series. The first main connecting segment extends from the first end of the first winding along a second direction, and the second main connecting segment extends along a first direction to the second end of the first winding. The first primary line includes a first connecting segment and a second connecting segment connected in series. The first connecting segment extends from the first end of the second winding along a second direction, and the second connecting segment extends along a first direction to the second end of the second winding.

[0146] The second main line includes a third main connecting segment and a fourth main connecting segment connected in series. The third main connecting segment extends from the first end of the third winding along a first direction and extends along a second direction to the second end of the third winding. The second secondary line includes a third connecting segment and a fourth secondary connecting segment connected in series. The third connecting segment extends from the first end of the fourth winding along a first direction and extends along a second direction to the second end of the fourth winding.

[0147] In this embodiment, by arranging the first and second windings of the first transformer in an L-shape on the substrate, and the third and fourth windings of the second transformer in an L-shape on the substrate, the inductance of the first and second windings, as well as the inductance of the third and fourth windings, can be increased within a limited area. This ensures the integration of the RF front-end module while meeting the performance and area requirements of the RF front-end module.

[0148] The above-described embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should all be included within the protection scope of the present invention.

Claims

1. A radio frequency front-end module, characterized in that, include, substrate; A first amplification unit, a second amplification unit, a first transformer, and a first output matching circuit are disposed on the substrate; The output terminal of the first amplification unit is connected to the first transformer, and the output terminal of the second amplification unit is connected to the first output matching circuit; The first transformer includes a first winding and a second winding coupled to each other. The first winding includes a first main line connected between a first end of the first winding and a second end of the first winding. The second winding includes a first secondary line connected between a first end of the second winding and a second end of the second winding. The first main line and the first secondary line are arranged to follow each other. The distance between the first end of the first winding and the first end of the second winding is less than a first value, where the first value is the distance between the first end of the first winding and the second end of the first winding. The distance between the second end of the first winding and the second end of the second winding is less than a second value, where the second value is the distance between the first end of the second winding and the second end of the second winding.

2. The radio frequency front-end module as described in claim 1, characterized in that, The radio frequency front-end module also includes a first post-stage circuit and a second post-stage circuit; The output terminal of the first transformer is connected to the first subsequent stage circuit, and the output terminal of the first output matching circuit is connected to the second subsequent stage circuit. The first winding and the second winding are disposed between the output terminal of the first amplification unit and the first subsequent circuit; The first output matching circuit is disposed between the output terminal of the second amplification unit and the second subsequent stage circuit.

3. The radio frequency front-end module as described in claim 2, characterized in that, The radio frequency front-end module also includes a first post-stage chip disposed on the substrate, wherein the first post-stage circuit and the second post-stage circuit are integrated on the first post-stage chip. The first end of the second winding is grounded, and the second end of the second winding is connected to the first post-stage circuit through the first input terminal of the first post-stage chip. The second end of the second winding is located close to the first input terminal of the first post-stage chip. The output terminal of the first output matching circuit is connected to the second subsequent circuit through the second input terminal of the first subsequent chip; the output terminal of the first output matching circuit is located close to the second input terminal of the first subsequent chip.

4. The radio frequency front-end module as described in claim 3, characterized in that, The distance between the second end of the second winding and the first input terminal of the first post-stage chip is less than the distance between the second end of the second winding and the second input terminal of the first post-stage chip. The distance between the output terminal of the first output matching circuit and the second input terminal of the first subsequent chip is less than the distance between the output terminal of the first output matching circuit and the first input terminal of the first subsequent chip.

5. The radio frequency front-end module as described in claim 3, characterized in that, The extension direction of the first virtual straight line where the output terminal of the first amplification unit is located is the same as the extension direction of the second virtual straight line where the first input terminal of the first post-stage chip is located. The extension direction of the first main line from the first end to the second end of the first winding is the same as the extension direction of the first virtual straight line. The extension direction of the first stage line from the first end to the second end of the second winding is the same as the extension direction of the second virtual straight line.

6. The radio frequency front-end module as described in claim 3, characterized in that, The radio frequency front-end module also includes a first radio frequency chip disposed on the substrate. Both the first amplification unit and the second amplification unit are integrated on the first radio frequency chip. The output terminals of the first amplification unit and the second amplification unit are both located on the second side of the first radio frequency chip. The second side of the first radio frequency chip is arranged along the first direction. The first input terminal and the second input terminal of the first post-stage chip are both disposed on the first side of the first post-stage chip, and the first side of the first post-stage chip is disposed along the first direction. The first side of the first post-stage chip is positioned adjacent to the second side of the first radio frequency chip.

7. The radio frequency front-end module as described in claim 6, characterized in that, The first amplification unit is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] frequency band; both the first main line and the first primary line are arranged in a straight line.

8. The radio frequency front-end module as described in claim 6, characterized in that, The first amplification unit is configured to support the transmission of radio frequency signals in the [600MHz, 2000MHz] frequency band; the first winding includes a first connecting segment, a second connecting segment, and a third connecting segment connected in series, and the angle between two adjacent connecting segments is a first angle; the second winding includes a fourth connecting segment, a fifth connecting segment, and a sixth connecting segment connected in series; the angle between two adjacent connecting segments is a second angle.

9. The radio frequency front-end module as described in claim 8, characterized in that, The first connecting segment extends horizontally away from the first RF chip, the second connecting segment extends vertically, and the third connecting segment extends horizontally away from the first RF chip. The fourth connection segment extends horizontally away from the first RF chip, the fifth connection segment extends vertically, and the sixth connection segment extends horizontally away from the first RF chip.

10. The radio frequency front-end module as described in claim 6, characterized in that, The output terminals of the first amplification unit and the second amplification unit are both located on the second side of the first radio frequency chip, and the second side of the first radio frequency chip is arranged along the first direction. The first input terminal of the first post-stage chip is disposed on the third side of the first post-stage chip, and the third side of the first post-stage chip is disposed along the second direction. The second input terminal of the first post-stage chip is disposed on the first side of the first post-stage chip, and the first side of the first post-stage chip is disposed along the first direction. The first side of the first post-stage chip is disposed adjacent to the second side of the first radio frequency chip, and the first direction and the second direction intersect.

11. The radio frequency front-end module as described in claim 10, characterized in that, The first amplification unit is configured to support the transmission of radio frequency signals in the [1500MHz, 3000MHz] frequency band; The first main line includes a first main connecting segment and a second main connecting segment connected in series. The first main connecting segment extends from the first end of the first winding along a second direction, and the second main connecting segment extends along a first direction to the second end of the first winding. The first-stage winding includes a first connecting segment and a second connecting segment connected in series. The first connecting segment extends from the first end of the second winding along a second direction, and the second connecting segment extends along a first direction to the second end of the second winding.

12. The radio frequency front-end module as described in any one of claims 1-11, characterized in that, The first output matching circuit includes a combination of at least one capacitor and at least one inductor connected in series and / or in parallel.

13. The radio frequency front-end module as described in claim 1, characterized in that, The radio frequency front-end module further includes a third amplification unit and a second transformer disposed on the substrate. The third amplification unit, the first amplification unit and the second amplification unit are arranged at intervals along a first direction. The second transformer, the first transformer and the first output matching circuit are arranged at intervals along the first direction. The output terminal of the third amplification unit is connected to the second transformer, wherein the second transformer includes a third winding and a fourth winding coupled to each other. The third winding includes a second main line connected between the first end and the second end of the third winding; the fourth winding includes a second secondary line connected between the first end and the second end of the fourth winding, and the second main line and the second secondary line are arranged to follow each other; the distance between the first end of the third winding and the first end of the fourth winding is less than a third value, the third value being the distance between the first end of the third winding and the second end of the third winding; the distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, the fourth value being the distance between the first end of the fourth winding and the second end of the fourth winding.

14. The radio frequency front-end module as described in claim 13, characterized in that, The first amplification unit is configured to support the transmission of radio frequency signals in the first frequency band; the first main line and the first primary line are arranged in an L-shape; The second amplification unit is configured to support the transmission of radio frequency signals in the second frequency band; the first output matching circuit includes a combination of at least one capacitor and at least one inductor connected in series and / or in parallel; The third amplification unit is configured to support the transmission of radio frequency signals in the third frequency band; the second main line and the second stage line are arranged in a straight line. Alternatively, the first amplification unit is configured to support the transmission of radio frequency signals in the third frequency band; the first main line and the first primary line are arranged in a straight line. The second amplification unit is configured to support the transmission of radio frequency signals in the second frequency band; the first output matching circuit includes a combination of at least one capacitor and at least one inductor connected in series and / or in parallel. The third amplification unit is configured to support the transmission of radio frequency signals in the first frequency band; the second main line and the second stage line are arranged in an L-shape; The third frequency band is greater than the first frequency band, and the first frequency band is greater than the second frequency band.

15. The radio frequency front-end module as described in claim 13, characterized in that, The first amplification unit is configured to support the transmission of radio frequency signals in the range of [1500MHz, 3000MHz]; the first main line and the first primary line are arranged in an L-shape. The second amplification unit is configured to support the transmission of radio frequency signals in the range of [600MHz, 2000MHz]; the first output matching circuit includes a combination of at least one capacitor and at least one inductor connected in series and / or in parallel; The third amplification unit is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] frequency band; the second main line and the second stage line are arranged in a straight line. Alternatively, the first amplification unit is configured to support the transmission of radio frequency signals in the range of [1700MHz, 7000MHz]; the first main line and the first primary line are arranged in a straight line. The second amplification unit is configured to support the transmission of radio frequency signals in the [600MHz, 2000MHz] frequency band; the first output matching circuit includes a combination of at least one capacitor and at least one inductor connected in series and / or in parallel. The third amplification unit is configured to support the transmission of radio frequency signals in the [1500MHz, 3000MHz] frequency band; the second main line and the second stage line are arranged in an L-shape.

16. A radio frequency front-end module, characterized in that, include, substrate; The first amplification unit and the third amplification unit, the first transformer and the second transformer are disposed on the substrate; The output of the first amplification unit is connected to the first transformer, and the output of the third amplification unit is connected to the second transformer; The first transformer includes a first winding and a second winding coupled to each other. The first winding includes a first main line connected between a first end and a second end of the first winding. The second winding includes a first secondary line connected between a first end and a second end of the second winding. The first main line and the first secondary line are arranged sequentially. The distance between the first end of the first winding and the first end of the second winding is less than a first value, where the first value is the distance between the first end and the second end of the first winding. The distance between the second end of the first winding and the second end of the second winding is less than a second value, where the second value is the distance between the first end and the second end of the second winding. The second transformer includes a third winding and a fourth winding coupled to each other. The third winding includes a second main line connected between the first end and the second end of the third winding. The fourth winding includes a second secondary line connected between the first end and the second end of the fourth winding. The second main line and the second secondary line are arranged sequentially. The distance between the first end of the third winding and the first end of the fourth winding is less than a third value, which is the distance between the first end of the third winding and the second end of the third winding. The distance between the second end of the third winding and the second end of the fourth winding is less than a fourth value, which is the distance between the first end of the fourth winding and the second end of the fourth winding.

17. The radio frequency front-end module as described in claim 16, characterized in that, The radio frequency front-end module further includes a first post-stage circuit and a third post-stage circuit. The output terminal of the first transformer is connected to the first post-stage circuit, and the output terminal of the second transformer is connected to the third post-stage circuit. The first winding and the second winding are disposed between the output terminal of the first amplification unit and the first post-stage circuit. The third winding and the fourth winding are disposed between the output terminal of the third amplification unit and the third post-stage circuit.

18. The radio frequency front-end module as described in claim 17, characterized in that, The radio frequency front-end module also includes a second post-stage chip, and the first post-stage circuit and the third post-stage circuit are integrated on the second post-stage chip; The first end of the second winding is grounded, and the second end of the second winding is connected to the first post-stage circuit through the first input terminal of the second post-stage chip; The first end of the fourth winding is grounded, and the second end of the fourth winding is connected to the third subsequent circuit through the second input terminal of the second subsequent chip. The distance between the second end of the second winding and the first input terminal of the second subsequent chip is less than the distance between the second end of the second winding and the second input terminal of the second subsequent chip. The distance between the second end of the fourth winding and the second input terminal of the second post-stage chip is less than the distance between the second end of the fourth winding and the first input terminal of the second post-stage chip.

19. The radio frequency front-end module as described in claim 16, characterized in that, The first amplification unit is configured to support the transmission of radio frequency signals in the [1500MHz, 3000MHz] frequency band; the first main line and the first primary line are arranged in an L-shape. The third amplification unit is configured to support the transmission of radio frequency signals in the [1700MHz, 7000MHz] frequency band; the second main line and the second stage line are arranged in a straight line.

20. The radio frequency front-end module as described in claim 18, characterized in that, The radio frequency front-end module further includes a second radio frequency chip disposed on the substrate. The first amplification unit and the third amplification unit are both integrated on the second radio frequency chip. The output terminals of the first amplification unit and the third amplification unit are both disposed on the second side of the second radio frequency chip. The second side of the second radio frequency chip is disposed along a first direction. The first input terminal of the second post-stage chip is disposed on the third side of the second post-stage chip, and the third side of the second post-stage chip is disposed along the second direction. The second input terminal of the second post-stage chip is disposed on the first side of the second post-stage chip, and the first side of the second post-stage chip is disposed along the first direction. The first side of the second post-stage chip is disposed adjacent to the second side of the second radio frequency chip, and the first direction and the second direction intersect.

21. The radio frequency front-end module as described in claim 20, characterized in that, The first main line includes a first main connecting segment and a second main connecting segment connected in series. The first main connecting segment extends from the first end of the first winding along a second direction, and the second main connecting segment extends along a first direction to the second end of the first winding. The first-level winding includes a first connecting segment and a second connecting segment connected in series. The first connecting segment extends from the first end of the second winding along the second direction, and the second connecting segment extends along the first direction to the second end of the second winding. The second main wire extends from the first end of the third winding along the second direction to the second end of the third winding; the second secondary wire extends from the first end of the fourth winding along the second direction to the second end of the fourth winding.

22. The radio frequency front-end module as described in claim 20, characterized in that, The output terminals of the first amplification unit and the third amplification unit are both located on the second side of the second RF chip, and the second side of the second RF chip is arranged along the first direction. The first input terminal of the second post-stage chip is disposed on the third side of the second post-stage chip, and the second input terminal of the second post-stage chip is disposed on the fourth side of the second post-stage chip. The third side of the second post-stage chip is disposed along the second direction, and the fourth side of the second post-stage chip is disposed along the second direction. The first direction and the second direction intersect.

23. The radio frequency front-end module as described in claim 22, characterized in that, The first main line includes a first main connecting segment and a second main connecting segment connected in series. The first main connecting segment extends from the first end of the first winding along a second direction, and the second main connecting segment extends along a first direction to the second end of the first winding. The first-level winding includes a first connecting segment and a second connecting segment connected in series. The first connecting segment extends from the first end of the second winding along the second direction, and the second connecting segment extends along the first direction to the second end of the second winding. The second main line includes a third main connecting segment and a fourth main connecting segment connected in series. The third main connecting segment extends from the first end of the third winding along the second direction, and the fourth main connecting segment extends along the first direction to the second end of the third winding. The second-stage winding includes a third connecting segment and a fourth connecting segment connected in series. The third connecting segment extends from the first end of the fourth winding along a second direction, and the fourth connecting segment extends along a first direction to the second end of the fourth winding.

24. The radio frequency front-end module as described in claim 20, characterized in that, The output terminal of the first amplification unit is disposed on the second side of the second RF chip, and the output terminal of the third amplification unit is disposed on the fourth side of the second RF chip. The second side of the second RF chip is disposed along a first direction; the fourth side of the second RF chip is disposed along a second direction; the first input terminal of the second post-stage chip is disposed on the third side of the second post-stage chip. The third side of the second post-stage chip is disposed along the second direction, and the second input terminal of the second post-stage chip is disposed on the first side of the second post-stage chip. The first side of the second post-stage chip is disposed along the first direction; wherein, the first direction and the second direction intersect.

25. The radio frequency front-end module as described in claim 24, characterized in that, The first main line includes a first main connecting segment and a second main connecting segment connected in series. The first main connecting segment extends from the first end of the first winding along a second direction, and the second main connecting segment extends along a first direction to the second end of the first winding. The first-level winding includes a first connecting segment and a second connecting segment connected in series. The first connecting segment extends from the first end of the second winding along the second direction, and the second connecting segment extends along the first direction to the second end of the second winding. The second main line includes a third main connecting segment and a fourth main connecting segment connected in series. The third main connecting segment extends from the first end of the third winding along a second direction, and the fourth main connecting segment extends along a first direction to the second end of the third winding. The second secondary line includes a third connecting segment and a fourth secondary connecting segment connected in series. The third connecting segment extends from the first end of the fourth winding along a second direction, and the fourth secondary connecting segment extends along a first direction to the second end of the fourth winding.

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