RF power supply equipment and RF power supply system
The RF power supply device, which combines multiple RF power amplifiers and phase shift units, solves the problem of the difficulty in quickly adjusting the power of RF power supplies in the prior art, and realizes flexible adjustment and rapid response of RF power.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENZHEN RSPOWER TECH CO LTD
- Filing Date
- 2025-01-14
- Publication Date
- 2026-05-26
Smart Images
Figure CN119966423B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of radio frequency technology, and in particular to a radio frequency power supply device and a radio frequency power supply system. Background Technology
[0002] Currently, with the development of radio frequency (RF) technology, the application of RF power supplies is becoming increasingly widespread. However, when applied to the semiconductor field, this places new demands on RF power. When RF power supplies output RF power to plasma loads, they need to adjust the power level of the RF power in a timely and rapid manner according to the needs of the plasma load. Therefore, how to meet the power regulation requirements of RF power has become a problem that needs to be considered. Summary of the Invention
[0003] This application provides an RF power supply device and an RF power supply system that can quickly meet the power regulation requirements of RF power.
[0004] In a first aspect, a radio frequency (RF) power supply device is provided. The RF power supply device includes an input terminal, M RF power amplifier units, M phase shift units, a power combining unit, and an output terminal. The input terminal is used to input an initial RF signal, and the output terminal is used to output target RF power. Each RF power amplifier unit includes N RF power amplifiers, each connected to the input terminal. Each RF power amplifier receives the initial RF signal input from the input terminal and amplifies the initial RF signal to obtain a corresponding sub-RF power, wherein each sub-RF power has the same phase angle. The N RF power amplifiers in each RF power amplifier unit include at least one first RF power amplifier and at least one second RF power amplifier. The M phase shift units correspond one-to-one with the M RF power amplifier units, and each phase shift unit is connected between at least one first RF power amplifier of the corresponding RF power amplifier unit and the power combining unit. Each phase shift unit is used to adjust the phase angle of the sub-RF power obtained by the at least one first RF power amplifier to obtain at least one phase-shifted RF power. At least one second RF power amplifier in each RF power amplifier unit is connected to the power combining unit, which is also connected to the output terminal. The power combining unit is used to combine at least one sub-RF power and at least one phase-shifted RF power to obtain the target RF power, which is then output through the output terminal. The first RF power amplifier is the RF power amplifier in each RF power amplifier unit connected to the phase-shifting unit, and the second RF power amplifier is the RF power amplifier in each RF power amplifier unit not connected to the phase-shifting unit. Where M ≥ 1, N ≥ 2.
[0005] In one possible implementation, M≥2, the power values of the sub-RF power obtained by the N RF power amplifiers of the same RF power amplifier unit are the same, and the power values of the sub-RF power obtained by the N RF power amplifiers of different RF power amplifier units are not the same.
[0006] In one possible implementation, the power values of the sub-RF power obtained by the N RF power amplifiers of the M RF power amplifier units decrease sequentially, and the ratio of the power value of the sub-RF power obtained by the N RF power amplifiers of the Kth RF power amplifier unit to the power value of the sub-RF power obtained by the N RF power amplifiers of the (K+1)th RF power amplifier unit is greater than or equal to a first threshold, where K≥1.
[0007] In one possible implementation, N=2, and each phase shift unit is connected between the first RF power amplifier of the corresponding RF power amplifier unit and the power combining unit. Each phase shift unit is used to shift the phase angle of the sub-RF power obtained by the corresponding first RF power amplifier by a target angle in a first direction or a second direction to obtain phase-shifted RF power.
[0008] In one possible implementation, the target angle is greater than or equal to zero and less than or equal to π / 2, such that the power combining unit combines the sub-RF power energy and phase-shifted RF power energy obtained from the two RF power amplifiers of the same RF power amplifier unit to obtain RF power energy with a power value greater than or equal to zero and less than or equal to twice the power value of the sub-RF power energy.
[0009] In one possible implementation, the power combining unit includes M first power combiners and a second power combiner. The second power combiner includes M power input terminals and a power output terminal. The M first power combiners correspond one-to-one with the M RF power amplifier units, and each first power combiner is connected to two RF power amplifiers of the corresponding RF power amplifier unit and to the corresponding power input terminal of the second power combiner. Each first power combiner is used to power combine the corresponding sub-RF power and phase-shifted RF power to obtain computational RF power. The power output terminal of the second power combiner is connected to the output terminal. The second power combiner is used to power combine the M computational RF powers to obtain the target RF power, which is then output through the output terminal.
[0010] In one possible implementation, the radio frequency power device further includes a control unit connected to all M phase shift units. The control unit is configured to control the corresponding phase shift unit to move the phase angle of the sub-radio frequency power obtained by the corresponding first radio frequency power amplifier to a target angle in the first direction or the second direction, based at least on the power value of the sub-radio frequency power or phase-shifted radio frequency power of each radio frequency power amplifier unit.
[0011] In one possible implementation, each phase-shifting unit includes a first phase-shifting module and a second phase-shifting module, which are sequentially connected between the first RF power amplifier and the power combining unit of the corresponding RF power amplifier unit. The first phase-shifting unit is used to selectively shift or not shift the phase angle of the sub-RF power obtained by the first RF power amplifier to obtain intermediate RF power. The second phase-shifting unit is used to selectively shift or not shift the phase angle of the intermediate RF power to obtain phase-shifted RF power that has shifted by a target angle relative to the phase angle of the sub-RF power obtained by the first RF power amplifier.
[0012] In one possible implementation, N > 2, the power combining unit includes a third power combiner, which has M × N power input terminals and a power output terminal. The M × N power input terminals of the third power combiner are connected one-to-one with each RF power amplifier of each RF power amplifier unit, and the power output terminal of the third power combiner is connected to the output terminal. The third power combiner is used to combine at least one sub-RF power and at least one phase-shifted RF power to obtain the target RF power.
[0013] Secondly, a radio frequency (RF) power supply system is also provided, comprising an RF power supply device. The RF power supply device includes an input terminal, M RF power amplifier units, M phase shift units, a power combining unit, and an output terminal. The input terminal is used to input an initial RF signal, and the output terminal is used to output target RF power. Each RF power amplifier unit includes N RF power amplifiers, each connected to the input terminal. Each RF power amplifier receives the initial RF signal input from the input terminal and amplifies the initial RF signal to obtain a corresponding sub-RF power, wherein each sub-RF power has the same phase angle. The N RF power amplifiers in each RF power amplifier unit include at least one first RF power amplifier and at least one second RF power amplifier. The M phase shift units correspond one-to-one with the M RF power amplifier units, and each phase shift unit is connected between at least one first RF power amplifier of the corresponding RF power amplifier unit and the power combining unit. Each phase shift unit is used to adjust the phase angle of the sub-RF power obtained by the at least one first RF power amplifier to obtain at least one phase-shifted RF power. At least one second RF power amplifier in each RF power amplifier unit is connected to the power combining unit, which is also connected to the output terminal. The power combining unit is used to combine at least one sub-RF power and at least one phase-shifted RF power to obtain the target RF power, which is then output through the output terminal. The first RF power amplifier is the RF power amplifier in each RF power amplifier unit connected to the phase-shifting unit, and the second RF power amplifier is the RF power amplifier in each RF power amplifier unit not connected to the phase-shifting unit. Where M ≥ 1, N ≥ 2.
[0014] The antenna assembly and electronic device of this application amplify the initial radio frequency signal by setting multiple radio frequency power amplifiers to obtain multiple corresponding sub-radio frequency power. By setting corresponding phase shift units to adjust the phase angle of at least one sub-radio frequency power, at least one phase-shifted radio frequency power can be obtained. Thus, based on the different phase angles of the sub-radio frequency power and any phase-shifted radio frequency power, the power value of the target radio frequency power can be modulated. Furthermore, each of the multiple radio frequency power amplifier units includes multiple radio frequency power amplifiers to meet specific power value requirements. By setting a power combining unit to combine at least one sub-radio frequency power and at least one phase-shifted radio frequency power, the required target radio frequency power can be obtained to quickly meet power adjustment requirements. Attached Figure Description
[0015] To more clearly illustrate the technical solutions in the embodiments of this application or the background art, the accompanying drawings used in the embodiments of this application or the background art will be described below.
[0016] Figure 1 This is a schematic diagram of a radio frequency power supply device in some embodiments of this application.
[0017] Figure 2 This is a schematic diagram of an RF power supply device when N > 2 in one embodiment of this application.
[0018] Figure 3 This is a schematic diagram of an RF power supply device with N=2 in one embodiment of this application.
[0019] Figure 4 This is a schematic diagram of a power combining unit in some embodiments of this application.
[0020] Figure 5 This is a schematic diagram of a phase shifting unit in some embodiments of this application.
[0021] Figure 6 This is a circuit diagram of a phase shifting unit in one embodiment of this application.
[0022] Figure 7 This is a circuit diagram of a phase shifting unit in another embodiment of this application.
[0023] Figure 8 This is another schematic diagram of the radio frequency power supply device in some embodiments of this application.
[0024] Figure 9 This is a schematic diagram of a radio frequency power supply system in one embodiment of this application.
[0025] Explanation of reference numerals in the attached diagram: 1000, RF power system; 10, RF power supply device; In, input terminal; RF1, initial RF signal; Out, output terminal; RF4, target RF power; 100, RF power amplifier unit; PA, RF power amplifier; PA1, first RF power amplifier; PA2, second RF power amplifier; RF2, sub-RF power; 200, phase shift unit; 210, first phase shift module; R1, first resistor; C1, first capacitor; S1, first switch; S3, third switch; S4, fourth switch; RF6, intermediate RF power; 220, second phase shift module; R2, second resistor; C2, second capacitor; S2, second switch; RF3, phase shift RF power; 300, power combining unit; 310, first power combiner; RF5, operational RF power; 320, second power combiner; 330, third power combiner; 400, control unit; GND, ground. Detailed Implementation
[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0027] In the description of the embodiments of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0028] Hereinafter, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," "third," or "fourth" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this application, unless otherwise stated, "a plurality of" means two or more.
[0029] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion, such that a process, method, system, product, or server that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such processes, methods, products, or devices.
[0030] Please refer to the following: Figure 1 , Figure 2 , Figure 1 This is a schematic diagram of the radio frequency power supply device in some embodiments of this application. Figure 2 This is a schematic diagram of an RF power supply device when N > 2 in one embodiment of this application. Figure 1 , Figure 2As shown, this application provides an RF power supply device 10, which includes an input terminal In, M RF power amplifier units 100, M phase shift units 200, a power combining unit 300, and an output terminal Out. The input terminal In is used to input an initial RF signal RF1, and the output terminal Out is used to output a target RF power RF4. Each RF power amplifier unit 100 includes N RF power amplifiers PA, and each RF power amplifier PA is connected to the input terminal In. Each RF power amplifier PA is used to receive the initial RF signal RF1 input from the input terminal In and amplify the initial RF signal RF1 to obtain a corresponding sub-RF power RF2, wherein the phase angle of each sub-RF power RF2 is the same; wherein the N RF power amplifiers PA in each RF power amplifier unit 100 include at least one first RF power amplifier PA1 and at least one second RF power amplifier PA2. M phase-shift units 200 correspond one-to-one with M RF power amplifier units 100, and each phase-shift unit 200 is connected between at least one first RF power amplifier PA1 and the power combining unit 300 of the corresponding RF power amplifier unit 100. Each phase-shift unit 200 is used to adjust the phase angle of the sub-RF power RF2 obtained by at least one first RF power amplifier PA1 to obtain at least one phase-shifted RF power RF3. At least one second RF power amplifier PA2 in each RF power amplifier unit 100 is connected to the power combining unit 300, and the power combining unit 300 is connected to the output terminal Out. The power combining unit 300 is used to perform power combining on at least one sub-RF power RF2 and at least one phase-shifted RF power RF3 to obtain the target RF power RF4, and output it through the output terminal Out. Among them, the first RF power amplifier PA1 is the RF power amplifier PA in each RF power amplifier unit 100 that is connected to the phase-shift unit 200, and the second RF power amplifier PA2 is the RF power amplifier PA in each RF power amplifier unit 100 that is not connected to the phase-shift unit 200. Where M≥1, N≥2.
[0031] Therefore, the RF power supply device 10 described above in this application can amplify the initial RF signal RF1 by setting multiple RF power amplifiers PA to obtain multiple corresponding sub-RF power RF2, and can obtain at least one phase-shifted RF power RF3 by setting a corresponding phase-shifting unit 200 to adjust the phase angle of at least one sub-RF power RF2. Thus, based on the different phase angles of the sub-RF power RF2 and any phase-shifted RF power RF3, the power value of the target RF power RF4 can be modulated. Furthermore, by setting a power combining unit 300 to combine the power of at least one sub-RF power RF2 and at least one phase-shifted RF power RF3, the required target RF power RF4 can be obtained, so as to quickly meet the power adjustment requirements.
[0032] Among them, the waveforms of the initial radio frequency signal RF1, each sub-radio frequency power RF2, each phase-shifted radio frequency power RF3, and the target radio frequency power RF4 can all be sine waves, and each sub-radio frequency power RF2, each phase-shifted radio frequency power RF3, and the target radio frequency power RF4 are also radio frequency signals with corresponding power values.
[0033] In some embodiments, the output terminal Out can be connected to a load to output the target radio frequency power RF4 to the load, wherein the load can be a plasma load. In practical applications, due to the limited power amplification capability of the radio frequency power amplifier PA, a single radio frequency power amplifier PA often cannot meet the power requirements of the plasma load. Therefore, it is necessary to combine the sub-radio frequency power RF2 obtained from multiple radio frequency power amplifiers PA and output it to the plasma load. The radio frequency power supply device 10 described in this application only shifts the phase angle of a portion of the sub-radio frequency power RF2 without adding other processing, which can respond more quickly to the power changes required by the plasma load and meet the power regulation requirements more quickly.
[0034] In some embodiments, the input terminal In can be connected to a crystal oscillator to receive the initial radio frequency signal RF1 emitted by the crystal oscillator.
[0035] In some embodiments, M≥2, the power values of the sub-RF power RF2 obtained by the N RF power amplifiers PA of the same RF power amplifier unit 100 are the same, and the power values of the sub-RF power RF2 obtained by the N RF power amplifiers PA of different RF power amplifier units 100 are different.
[0036] Therefore, in the above-mentioned RF power supply device 10 of this application, when M≥2, each of the multiple RF power amplifier units 100 includes multiple RF power amplifiers PA, which can meet specific power value requirements and achieve more flexible power adjustment.
[0037] In this unit, the sub-RF power RF2 obtained by the N RF power amplifiers PA in the same RF power amplifier unit 100 has the same power value. That is, the sub-RF power RF2 of all first RF power amplifiers PA1 and all second RF power amplifiers PA2 in the N RF power amplifiers PA in the same RF power amplifier unit 100 has the same power value. In particular, the first RF power amplifiers PA1 and PA2 are only distinguished by whether they are connected to the phase shift unit 200, and the circuit structures of the first RF power amplifiers PA1 and PA2 can be the same.
[0038] In some embodiments, each first RF power amplifier PA1 and each second RF power amplifier PA2 may include a Class E RF power amplifier circuit or a Class D RF power amplifier circuit. This application is not limited to this, as long as it can amplify the initial RF signal RF1 to obtain the sub-RF power RF2.
[0039] Furthermore, M≥2, the power combining unit 300 is used to combine multiple sub-RF power RF2 and multiple phase-shifted RF power RF3 to obtain the target RF power RF4, and output it through the output terminal Out.
[0040] In some embodiments, the power values of the sub-radio power RF2 obtained by the N radio power amplifiers PA of the M radio power amplifier units 100 decrease sequentially, and the ratio of the power value of the sub-radio power RF2 obtained by the N radio power amplifiers PA of the Kth radio power amplifier unit 100 to the power value of the sub-radio power RF2 obtained by the N radio power amplifiers PA of the (K+1)th radio power amplifier unit 100 is greater than or equal to a first threshold, wherein K≥1.
[0041] Among them, the power values of the sub-radio power RF2 obtained by the N radio power amplifiers PA of the M radio power amplifier units 100 decrease sequentially, that is, the power value of the sub-radio power RF2 obtained by the N radio power amplifiers PA of the Kth radio power amplifier unit 100 is greater than the power value of the sub-radio power RF2 obtained by the N radio power amplifiers PA of the K+1th radio power amplifier unit 100.
[0042] Therefore, the RF power supply device 10 described above in this application can accurately achieve power regulation by configuring the ratio of the power values of the multiple sub-RF power RF2 of the Kth RF power amplifier unit 100 to the power values of the multiple sub-RF power RF2 of the K+1th RF power amplifier unit 100 to be greater than or equal to a first threshold.
[0043] In some embodiments, the first threshold can be 10, thereby facilitating the determination of the target radio frequency power RF4 required for the plasma load.
[0044] In one embodiment, M=3, N=3, or M=4, N=2, can meet the power regulation requirements of the plasma load in most cases.
[0045] In some embodiments, N=2, each phase shift unit 200 is connected between the first RF power amplifier PA1 of the corresponding RF power amplifier unit 100 and the power combining unit 300, and each phase shift unit 200 is used to shift the phase angle of the sub-RF power RF2 obtained by the corresponding first RF power amplifier PA1 by a target angle in a first direction or a second direction to obtain phase-shifted RF power RF3.
[0046] Therefore, the RF power supply device 10 described above in this application achieves phase shift of the sub-RF power RF2 by setting each phase shift unit 200 to shift the phase angle of the sub-RF power RF2 obtained by the corresponding first RF power amplifier PA1 by a target angle in a first direction or a second direction, thereby obtaining the corresponding phase-shifted RF power RF3.
[0047] In some embodiments, the first direction can be a direction that causes the phase angle of the sub-RF power RF2 obtained by the corresponding first RF power amplifier PA1 to lead, and the corresponding second direction is a direction that causes the phase angle of the sub-RF power RF2 obtained by the corresponding first RF power amplifier PA1 to lag. Alternatively, the first direction can be a direction that causes the phase angle of the sub-RF power RF2 obtained by the corresponding first RF power amplifier PA1 to lag, and the corresponding second direction can be a direction that causes the phase angle of the sub-RF power RF2 obtained by the corresponding first RF power amplifier PA1 to lead.
[0048] In some embodiments, the target angle is greater than or equal to zero and less than or equal to π / 2, such that the power combining unit 300 combines the sub-RF power RF2 and phase-shifted RF power RF3 obtained by the two RF power amplifiers PA of the same RF power amplifier unit 100 to obtain the power value of the RF power greater than or equal to zero and less than or equal to twice the power value of the sub-RF power RF2.
[0049] Therefore, the RF power supply device 10 described above in this application, according to the trigonometric function formula of a sine wave, when the target angle is greater than or equal to zero and less than or equal to π / 2, enables the power combining unit 300 to combine the sub-RF power RF2 and phase-shifted RF3 obtained by the two RF power amplifiers PA of the same RF power amplifier unit 100 to obtain RF power values that are greater than or equal to zero and less than or equal to twice the power value of sub-RF power RF2.
[0050] Please refer to the following: Figure 3 , Figure 3 This is a schematic diagram of the radio frequency power supply device when N=2 in one embodiment of this application. Figure 1 , Figure 2 , Figure 3 As shown, the radio frequency power device also includes a control unit 400, which is connected to M phase shift units 200. The control unit 400 is used to control the corresponding phase shift unit 200 to shift the phase angle of the sub-radio frequency power RF2 obtained by the corresponding first radio frequency power amplifier PA1 by a target angle in a first direction or a second direction, based at least on the power value of the sub-radio frequency power RF2 or phase shift radio frequency power RF3 of each radio frequency power amplifier unit 100.
[0051] Therefore, by setting the control unit 400 and at least based on the power value of the sub-RF power RF2 or phase-shifting RF3 of each RF power amplifier unit 100, the target angle of phase shift of the corresponding phase shift unit 200 can be determined.
[0052] In some embodiments, when the ratio of the power value of the sub-RF power RF2 obtained by the N RF power amplifiers PA of the Kth RF power amplifier unit 100 to the power value of the sub-RF power RF2 obtained by the N RF power amplifiers PA of the (K+1)th RF power amplifier unit 100 is equal to a first threshold, the control unit 400 further controls the corresponding phase shift unit 200 to move the phase angle of the sub-RF power RF2 obtained by the corresponding first RF power amplifier PA1 by a target angle in a first direction or a second direction according to the first threshold. That is, the control unit 400 further controls the corresponding phase shift unit 200 to move the phase angle of the sub-RF power RF2 obtained by the corresponding first RF power amplifier PA1 by a target angle in a first direction or a second direction according to the ratio of the power value of the sub-RF power RF2 obtained by the N RF power amplifiers PA of the Kth RF power amplifier unit 100 to the power value of the sub-RF power RF2 obtained by the N RF power amplifiers PA of the (K+1)th RF power amplifier unit 100.
[0053] Please refer to the following: Figure 4 , Figure 4 This is a schematic diagram of a power combining unit in some embodiments of this application. For example... Figure 1 , Figure 2 , Figure 4 As shown, the power combining unit 300 includes M first power combiners 310 and a second power combiner 320. The second power combiner 320 includes M power input terminals and power output terminals. The M first power combiners 310 correspond one-to-one with the M RF power amplifier units 100, and each first power combiner 310 is connected to the two RF power amplifiers PA of the corresponding RF power amplifier unit 100, and also connected to the corresponding power input terminal of the second power combiner 320. Each first power combiner 310 is used to combine the corresponding sub-RF power RF2 and phase-shifted RF power RF3 to obtain the operational RF power RF5. The power output terminal of the second power combiner 320 is connected to the output terminal Out. The second power combiner 320 is used to combine the M operational RF powers RF5 to obtain the target RF power RF4, and output it through the output terminal Out.
[0054] Therefore, the RF power supply device 10 described above in this application, since the power combiner also has limitations in power combining, and the power values of the sub-RF power RF2 obtained by the N RF power amplifiers PA of the M RF power amplifier units 100 may be different, by setting the power combining unit 300 to include M first power combiners 310 and second power combiners 320, can first combine the sub-RF power RF2 and phase-shifted RF3 obtained by the two RF power amplifiers PA of the corresponding RF power amplifier unit 100, and then combine the M operational RF5 obtained by the M first power combiners 310 to obtain the target RF power RF4.
[0055] Please refer to the following: Figure 5 , Figure 5 This is a schematic diagram of the phase shifting unit in some embodiments of this application. For example... Figure 1 , Figure 2 , Figure 5 As shown, each phase shift unit 200 includes a first phase shift module 210 and a second phase shift module 220. The first phase shift module 210 and the second phase shift module 220 are sequentially connected between the first RF power amplifier PA1 and the power combining unit 300 of the corresponding RF power amplifier unit 100. The first phase shift module 210 is used to selectively shift or not shift the phase angle of the sub-RF power RF2 obtained by the first RF power amplifier PA1 to obtain the intermediate RF power RF6. The second phase shift module 220 is used to selectively shift or not shift the phase angle of the intermediate RF power RF6 to obtain the phase-shifted RF power RF3 with a target angle shifted relative to the phase angle of the sub-RF power RF2 obtained by the first RF power amplifier PA1.
[0056] The first phase shift module 210 is used to selectively be in a first connection state or a second connection state to shift or not shift the phase angle of the sub-radio frequency power RF2. The second phase shift module 220 is used to selectively be in a third connection state or a fourth connection state to shift or not shift the phase angle of the intermediate radio frequency power RF6. The control unit 400 is used to control the first phase shift module 210 to be in the first connection state or the second connection state, and to control the second phase shift module 220 to be in the third connection state or the fourth connection state.
[0057] In one or more embodiments, when the first phase shift module 210 is in a first connection state, the first phase shift module 210 shifts the phase angle of the sub-radio frequency power RF2 in a first direction. When the second phase shift module 220 is in a third connection state, the second phase shift module 220 shifts the phase angle of the intermediate radio frequency power RF6 in a second direction. The first and second directions are opposite.
[0058] Furthermore, when the first phase shift module 210 is in the second connection state, the first phase shift module 210 does not shift the phase angle of the sub-radio frequency power RF2. When the second phase shift module 220 is in the fourth connection state, the second phase shift module 220 does not shift the phase angle of the intermediate radio frequency power RF6.
[0059] It should be noted that when the first phase shift module 210 does not shift the phase angle of the sub-RF power RF2, the phase angle of the obtained intermediate RF power RF6 is the same as the phase angle of the sub-RF power RF2. When the second phase shift module 220 does not shift the phase angle of the intermediate RF power RF6, the phase angle of the obtained phase-shifted RF power RF3 is the same as the phase angle of the intermediate RF power RF6.
[0060] In one or more embodiments, the phase shift accuracy of the first phase shift module 210 is different from that of the second phase shift module 220. The control unit 400 can be used to simultaneously control the first phase shift module 210 to be in a first connected state and control the second phase shift module 220 to be in a third connected state.
[0061] In one or more embodiments, the first phase shift module 210 further has a variable first phase shift parameter, wherein when the first phase shift module 210 is in a first connection state, the shift angle of the phase angle of the sub-radio frequency power RF2 by the first phase shift module 210 changes according to the change of the first phase shift parameter. The second phase shift module 220 further has a variable second phase shift parameter, wherein when the second phase shift module 220 is in a third connection state, the shift angle of the phase angle of the intermediate radio frequency power RF6 by the second phase shift module 220 changes according to the change of the second phase shift parameter. The control unit 400 is further configured to adjust the first phase shift parameter of the first phase shift module 210, or adjust the second phase shift parameter of the second phase shift module 220.
[0062] The phase shift accuracy of the first phase shift module 210 is the minimum change in the first phase shift parameter, and the phase shift accuracy of the second phase shift module 220 is the minimum change in the second phase shift parameter.
[0063] Furthermore, the control unit 400 can also be used to adjust the first phase shift parameter of the first phase shift module 210 and the second phase shift parameter of the second phase shift module 220.
[0064] Please refer to the following: Figure 6 , Figure 6 This is a circuit diagram of a phase shift unit in one embodiment of this application. Figure 1 , Figure 2 , Figure 5 , Figure 6As shown, the first phase shift module 210 includes a first resistor R1, a first capacitor C1, and a first switch S1. The first resistor R1 and the first capacitor C1 are connected together, and the first capacitor C1 is connected to ground GND. The connection point between the first resistor R1 and the first capacitor C1 is connected to the second phase shift module 220. The two ends of the first switch S1 are correspondingly connected to the two ends of the first resistor R1. The first switch S1 is used to selectively be in a conducting or disconnected state, so that the first phase shift module 210 is selectively in a second connected state or a first connected state.
[0065] Specifically, the phase difference between the phase angle of the intermediate radio frequency power RF6 and the phase angle of the sub-radio frequency power RF2 satisfies a first preset relationship, which can be -tan -1 (R1×C1×ω), that is, the phase difference between the phase angle of the sub-RF power RF2 and the phase angle of the intermediate RF power RF6 is related to the resistance value of the first resistor R1, the capacitance value of the first capacitor C1, and the angular frequency of the sub-RF power RF2. In other words, the shift angle of the phase angle of the sub-RF power RF2 by the first phase shift module 210 is -tan ω. -1 (R1×C1×ω), the first phase shift parameter of the first phase shift module 210 is related to the resistance value of the first resistor R1, the capacitance value of the first capacitor C1, and the angular frequency of the sub-radio frequency power RF2.
[0066] Furthermore, the first resistor R1 has an adjustable resistance value and / or the first capacitor C1 has an adjustable capacitance value. By adjusting the resistance value of the first resistor R1 and / or the capacitance value of the first capacitor C1, the first phase shift parameter of the first phase shift module 210 can be changed. Figure 6 As shown, the first capacitor C1 can be an adjustable capacitor with an adjustable capacitance value.
[0067] Please refer to the following: Figure 7 , Figure 7 This is a circuit diagram of a phase shift unit in another embodiment of this application. Figure 1 , Figure 2 , Figure 5 , Figure 7As shown, the first phase shift module 210 may also include a first resistor R1, a first capacitor C1, a third switch S3, and a fourth switch S4. The first resistor R1, the first capacitor C1, and the fourth switch S4 are connected together. The fourth switch S4 is connected to ground (GND). The connection point between the first resistor R1 and the first capacitor C1 is connected to the second phase shift module 220. The two ends of the third switch S3 are correspondingly connected to the two ends of the first capacitor C1. The third switch S3 and the fourth switch S4 are used to selectively be in a conducting or disconnected state simultaneously, so that the first phase shift module 210 is selectively in a second connected state or a first connected state. That is, when both the third switch S3 and the fourth switch S4 are in the conducting state, the first phase shift module 210 is selectively in the second connected state; and when both the third switch S3 and the fourth switch S4 are in the disconnected state, the first phase shift module 210 is selectively in the first connected state.
[0068] like Figure 1 , Figure 2 , Figure 5 , Figure 7 As shown, the second phase shift module 220 includes a second resistor R2, a second capacitor C2, and a second switch S2. The second capacitor C2 and the second resistor R2 are sequentially connected between the first phase shift module 210 and ground GND. The connection point between the second capacitor C2 and the second resistor R2 is connected to the power combining unit 300. The two ends of the second switch S2 are correspondingly connected to the two ends of the second capacitor C2. The second switch S2 is used to selectively be in a conducting or disconnected state, so that the second phase shift module 220 is selectively in a fourth connection state or a third connection state.
[0069] Specifically, the phase difference between the phase angle of the phase-shifted radio frequency power RF3 and the phase angle of the intermediate radio frequency power RF6 satisfies a second preset relationship, which can be tan . -1 (1 / R2×C2×ω), that is, the phase difference between the phase angle of the phase-shifted RF energy RF3 and the phase angle of the intermediate RF energy RF6 is related to the resistance value of the second resistor R2, the capacitance value of the second capacitor C2, and the angular frequency of the intermediate RF energy RF6. In other words, the shift angle of the phase angle of the intermediate RF energy RF6 by the second phase-shift module 220 is tan ω. -1 (1 / R2×C2×ω), the second phase shift parameter of the second phase shift module 220 is related to the resistance value of the second resistor R2, the capacitance value of the second capacitor C2, and the angular frequency of the intermediate radio frequency power RF6.
[0070] Furthermore, the second resistor R2 has an adjustable resistance value and / or the second capacitor C2 has an adjustable capacitance value. By adjusting the resistance value of the second resistor R2 and / or the capacitance value of the second capacitor C2, the second phase shift parameters of the second phase shift module 220 can be changed. Figure 7 As shown, the second capacitor C2 can be an adjustable capacitor with an adjustable capacitance value.
[0071] In some embodiments, such as Figure 3 The control unit 400 shown controls, respectively, such as Figure 6 , Figure 7 One or more of the first switch S1, the second switch S2, the third switch S3, and the fourth switch S4 shown are turned on or off to control the first phase shift module 210 to be in the first connection state or the second connection state, and to control the second phase shift module 220 to be in the third connection state or the fourth connection state.
[0072] In one or more embodiments, such as Figure 3 The control unit 400 shown can be adjusted by adjusting, for example... Figure 6 , Figure 7 The capacitance values of the first capacitor C1 and / or the second capacitor C2 are shown to adjust the first phase shift parameter of the first phase shift module 210 and / or the second phase shift parameter of the second phase shift module 220 accordingly.
[0073] In one or more embodiments, the control unit 400 may be a general-purpose processor such as a central processing unit (CPU), or a digital signal processor (DSP), application-specific integrated circuit (ASIC), field-programmable gate array (FPGA), or other programmable logic devices, discrete gate logic devices, transistor logic devices, or other logic control devices. It may also be a microprocessor such as a micro control unit (MCU).
[0074] Please see Figure 8 , Figure 8 This is another schematic diagram of the radio frequency power supply device in some embodiments of this application. For example... Figure 8 As shown, N > 2, the power combining unit 300 includes a third power combiner 330, which includes M×N power input terminals and a power output terminal. The M×N power input terminals of the third power combiner 330 are connected one-to-one with each RF power amplifier PA of each RF power amplifier unit 100, and the power output terminal of the third power combiner 330 is connected to the output terminal Out. The third power combiner 330 is used to combine at least one sub-RF power RF2 and at least one phase-shifted RF power RF3 to obtain the target RF power RF4.
[0075] Therefore, the radio frequency power supply device 10 described above in this application can also be configured with a third power combiner 330 including M×N power input terminals and power output terminals, thereby enabling direct power combining of at least one sub-radio frequency power RF2 and at least one phase-shifted radio frequency power RF3 to obtain the target radio frequency power RF4.
[0076] In some embodiments, each of the first power combiner 310, the second power combiner 320, and the third power combiner 330 may include a power combining circuit composed of passive devices such as inductors, capacitors, diodes, and transformers.
[0077] The radio frequency power supply device 10 of this application, through the above structure, can quickly adjust the power value of the target radio frequency power RF4 to meet the different power requirements of the plasma load at different stages, and can accurately obtain the specific required power value of the target radio frequency power RF4.
[0078] Please see Figure 9 , Figure 9 This is a schematic diagram of a radio frequency power supply system according to an embodiment of this application. Figure 9 As shown, this application also provides an RF power system 1000, which includes the RF power device 10 in any of the foregoing embodiments.
[0079] Please refer to it again. Figure 1 .like Figure 1As shown, the RF power supply device 10 includes an input terminal In, M RF power amplifier units 100, M phase shift units 200, a power combining unit 300, and an output terminal Out. The input terminal In is used to input an initial RF signal RF1, and the output terminal Out is used to output the target RF power RF4. Each RF power amplifier unit 100 includes N RF power amplifiers PA, and each RF power amplifier PA is connected to the input terminal In. Each RF power amplifier PA is used to receive the initial RF signal RF1 input from the input terminal In and amplify the initial RF signal RF1 to obtain the corresponding sub-RF power RF2. The phase angle of each sub-RF power RF2 is the same. The N RF power amplifiers PA in each RF power amplifier unit 100 include at least one first RF power amplifier PA1 and at least one second RF power amplifier PA2. M phase-shift units 200 correspond one-to-one with M RF power amplifier units 100, and each phase-shift unit 200 is connected between at least one first RF power amplifier PA1 and the power combining unit 300 of the corresponding RF power amplifier unit 100. Each phase-shift unit 200 is used to adjust the phase angle of the sub-RF power RF2 obtained by at least one first RF power amplifier PA1 to obtain at least one phase-shifted RF power RF3. At least one second RF power amplifier PA2 in each RF power amplifier unit 100 is connected to the power combining unit 300, and the power combining unit 300 is connected to the output terminal Out. The power combining unit 300 is used to perform power combining on at least one sub-RF power RF2 and at least one phase-shifted RF power RF3 to obtain the target RF power RF4, and output it through the output terminal Out. Among them, the first RF power amplifier PA1 is the RF power amplifier PA in each RF power amplifier unit 100 that is connected to the phase-shift unit 200, and the second RF power amplifier PA2 is the RF power amplifier PA in each RF power amplifier unit 100 that is not connected to the phase-shift unit 200. Where M≥1, N≥2.
[0080] For a more specific description of the structure of the RF power supply device 10, please refer to the relevant content of the RF power supply device 10 in any of the foregoing embodiments, which will not be repeated here.
[0081] The radio frequency power supply device 10 and radio frequency power supply system 1000 of this application, through the above-described structure, can quickly adjust the power value of the target radio frequency power RF4 to meet the different power requirements of the plasma load at different stages, and can accurately obtain the specific required power value of the target radio frequency power RF4.
[0082] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Where there is no conflict, the embodiments and features in the embodiments of this application can be combined with each other. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A radio frequency power supply apparatus, characterized by, It includes an input terminal, M radio frequency power amplifier units, M phase shift units, a power combining unit, and an output terminal. The input terminal is used to input an initial radio frequency signal, and the output terminal is used to output the target radio frequency power. Each RF power amplifier unit includes N RF power amplifiers, each of which is connected to the input terminal. Each RF power amplifier receives the initial RF signal input from the input terminal and amplifies the initial RF signal to obtain a corresponding sub-RF power. The phase angle of each sub-RF power is the same. The N RF power amplifiers in each RF power amplifier unit include at least one first RF power amplifier and at least one second RF power amplifier. The M phase shift units correspond one-to-one with the M RF power amplifier units, and each phase shift unit is connected between at least one first RF power amplifier of the corresponding RF power amplifier unit and the power combining unit. Each phase shift unit is used to adjust the phase angle of the sub-RF power obtained by the at least one first RF power amplifier to obtain at least one phase-shifted RF power. At least one second RF power amplifier in each RF power amplifier unit is connected to the power combining unit, and the power combining unit is connected to the output terminal. The power combining unit is used to combine at least one sub-RF power and at least one phase-shifted RF power to obtain the target RF power, which is then output through the output terminal. Wherein, the first RF power amplifier is the RF power amplifier in each RF power amplifier unit that is connected to the phase-shifting unit, and the second RF power amplifier is the RF power amplifier in each RF power amplifier unit that is not connected to the phase-shifting unit. Where M≥1, N≥2; Each phase shift unit includes a first phase shift module and a second phase shift module, wherein the first phase shift module and the second phase shift module are sequentially connected between the first RF power amplifier and the power combining unit of the corresponding RF power amplifier unit; The first phase shift module is used to selectively be in a first connection state or a second connection state to selectively shift or not shift the phase angle of the sub-RF power obtained by the first RF power amplifier in order to obtain intermediate RF power. The second phase shift module is used to selectively be in a third connection state or a fourth connection state to selectively shift or not shift the phase angle of the intermediate radio frequency power to obtain the phase-shifted radio frequency power with a target angle shift relative to the phase angle of the sub-radio frequency power obtained from the first radio frequency power amplifier. The first phase shift module includes a first resistor, a first capacitor, a third switch, and a fourth switch. The first resistor, the first capacitor, and the fourth switch are connected together. The fourth switch is connected to ground. The connection point between the first resistor and the first capacitor is connected to the second phase shift module. The two ends of the third switch are correspondingly connected to the two ends of the first capacitor. The third switch and the fourth switch are used to selectively be in a conducting or disconnected state simultaneously, so that the first phase shift module is selectively in the second connected state or the first connected state. The second phase shift module includes a second resistor, a second capacitor, and a second switch. The second capacitor and the second resistor are sequentially connected between the first phase shift module and ground. The connection point between the second capacitor and the second resistor is connected to the power combining unit. The two ends of the second switch are correspondingly connected to the two ends of the second capacitor. The second switch is used to selectively be in a conducting or disconnected state, so that the second phase shift module is selectively in the fourth connected state or the third connected state.
2. The radio frequency power supply device of claim 1, wherein, M≥2, the power values of the sub-RF power amplifiers obtained by the N RF power amplifiers of the same RF power amplifier unit are the same, and the power values of the sub-RF power amplifiers obtained by the N RF power amplifiers of different RF power amplifier units are different.
3. The RF power supply apparatus according to claim 2, characterized by, The power values of the sub-RF power obtained by the N RF power amplifiers of the M RF power amplifier units decrease sequentially, and the ratio of the power value of the sub-RF power obtained by the N RF power amplifiers of the Kth RF power amplifier unit to the power value of the sub-RF power obtained by the N RF power amplifiers of the K+1th RF power amplifier unit is greater than or equal to a first threshold, where K≥1.
4. The RF power supply apparatus according to claim 2, characterized by, N=2, each phase shift unit is connected between the first RF power amplifier of the corresponding RF power amplifier unit and the power combining unit. Each phase shift unit is used to shift the phase angle of the sub-RF power obtained by the corresponding first RF power amplifier by a target angle in a first direction or a second direction to obtain phase-shifted RF power.
5. The RF power supply apparatus according to claim 4, wherein The target angle is greater than or equal to zero and less than or equal to π / 2, so that the power combining unit combines the sub-RF power energy and phase-shifted RF power energy obtained from the two RF power amplifiers of the same RF power amplifier unit to obtain the power value of the RF power energy which is greater than or equal to zero and less than or equal to twice the power value of the sub-RF power energy.
6. The RF power supply apparatus according to claim 4, wherein The power combining unit includes M first power combiners and a second power combiner, the second power combiner including M power input terminals and power output terminals; The M first power combiners correspond one-to-one with the M radio frequency power amplifier units, and each first power combiner is connected to the two radio frequency power amplifiers of the corresponding radio frequency power amplifier unit and to the corresponding power input terminal of the second power combiner. Each first power combiner is used to combine the corresponding sub-radio frequency power and phase-shifted radio frequency power to obtain the computational radio frequency power. The power output terminal of the second power combiner is connected to the output terminal. The second power combiner is used to combine the power of M operational radio frequency electrical energy to obtain the target radio frequency electrical energy, and output it through the output terminal.
7. The radio frequency power supply device according to claim 6, characterized in that, The radio frequency power device further includes a control unit, which is connected to all M phase shift units. The control unit is used to control the corresponding phase shift unit to move the phase angle of the sub-radio frequency power obtained by the corresponding first radio frequency power amplifier to a target angle in the first direction or the second direction, based at least on the power value of the sub-radio frequency power or phase shift radio frequency power of each radio frequency power amplifier unit.
8. The radio frequency power supply device according to claim 1, characterized in that, N > 2, the power combining unit includes a third power combiner, the third power combiner includes M × N power input terminals and power output terminals; The M×N power input terminals of the third power combiner are connected one-to-one with each RF power amplifier of each RF power amplifier unit. The power output terminal of the third power combiner is connected to the output terminal. The third power combiner is used to combine at least one sub-RF power and at least one phase-shifted RF power to obtain the target RF power.
9. A radio frequency power supply system, characterized in that, Includes the radio frequency power supply device as described in any one of claims 1-8.