Film forming apparatus, detection apparatus, and method for controlling film forming apparatus

Abstract

A film forming apparatus for forming a film on a substrate is used, the film forming apparatus comprising: an electrostatic chuck having an adsorption surface for adsorbing the substrate; and a detection means for detecting the state of the adsorption surface on which the substrate is not adsorbed.

Description

Technical Field

[0001] The invention relates to a film forming device, a detection device and a control method of the film forming device. Background Art

[0002] In recent years, flat panel display devices such as organic EL display devices have been used as display screens for monitors, televisions, and smartphones. The panel of the organic EL display device has a structure in which a light-emitting organic layer is formed between two opposing electrodes (cathode electrode and anode electrode). When an organic EL display panel is formed using a film-forming device, the peripheral edge of the substrate is held by a substrate holder arranged in the chamber of the film-forming device, and an evaporation source arranged in the lower part of the chamber is heated to release a metal or organic vapor deposition material, which is vapor-deposited onto the lower surface of the substrate through a mask. However, as the size of the substrate increases, the deflection caused by the deadweight of the central part of the substrate becomes larger, which may affect the vapor deposition accuracy.

[0003] Therefore, in order to reduce the deflection of the substrate, a technology for holding the substrate using an electrostatic chuck (ESC) is proposed. In Patent Document 1 (Japanese Patent Gazette No. 2019-117926), an electrostatic chuck is pre-set in a manner facing the upper surface of the substrate, and an adsorption voltage is applied to the electrostatic chuck when the electrostatic chuck is in contact with or close to the substrate, thereby adsorbing and holding the substrate. In this way, the deflection when holding the substrate can be reduced. In addition, Patent Document 1 discloses a technology for measuring the tightness of the electrostatic chuck and the substrate by using a sensor to detect the adsorption state of the substrate to the electrostatic chuck, and performing film formation in a state where the electrostatic chuck and the substrate are in close contact.

[0004] Prior Art Literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2019-117926 Summary of the invention

[0007] Problems to be solved by the invention

[0008] However, if foreign matter is attached to the surface of the electrostatic chuck, the electrostatic chuck may not be able to properly adsorb the substrate. For example, if an electrostatic chuck with a conductor such as a vapor deposition material attached is used, the desired adsorption force cannot be obtained even if an adsorption voltage is applied, and the adhesion between the electrostatic chuck and the substrate may decrease. In addition, if the substrate is adsorbed in a state where particles generated in the room are attached to the surface of the electrostatic chuck, the substrate may be damaged. Therefore, it is required to check the surface state of the electrostatic chuck and detect whether there is foreign matter attached.

[0009] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a technology for detecting the surface state of an electrostatic chuck that attracts and holds a substrate in a film forming apparatus.

[0010] Solutions to Solve Problems

[0011] The present invention adopts the following technical solution. That is,

[0012] A film forming device is a film forming device for forming a film on a substrate, characterized in that:

[0013] The film forming device comprises:

[0014] An electrostatic chuck having an adsorption surface for adsorbing the substrate; and

[0015] The detection component detects a state of the adsorption surface where the substrate is not adsorbed.

[0016] The present invention also adopts the following technical solution. That is,

[0017] A detection device is arranged in a film forming device for forming a film on a substrate adsorbed by an adsorption surface of an electrostatic chuck, characterized in that:

[0018] The detection device includes a detection unit that detects a state in which the adsorption surface is not adsorbing the substrate.

[0019] The present invention also adopts the following technical solution. That is,

[0020] A control method for a film forming device that forms a film on a substrate adsorbed by an adsorption surface of an electrostatic chuck, characterized in that:

[0021] The control method includes a step of detecting a state in which the adsorption surface of the substrate is not adsorbed by a detection member.

[0022] Effects of the Invention

[0023] According to the present invention, it is possible to provide a technology for detecting the surface state of an electrostatic chuck that attracts and holds a substrate in a film forming apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic plan view showing the structure of a film forming apparatus.

[0025] Figure 2 It is a cross-sectional view showing the internal structure of the film forming chamber.

[0026] Figure 3 It is a cross-sectional view showing the relationship between the adhesion of foreign matter to the electrostatic chuck and the adsorption force.

[0027] Figure 4This is a block diagram illustrating electrostatic capacitance detection in the first embodiment.

[0028] Figure 5 This is a block diagram illustrating electrostatic capacitance detection in the second embodiment.

[0029] Figure 6 It is a diagram for explaining the structure of the electrostatic chuck of Example 3.

[0030] Figure 7 It is a diagram for explaining the structure of an electrostatic chuck in a modified example of Example 3.

[0031] Figure 8 This is a diagram for explaining the detection of foreign matter adhesion in Example 4.

[0032] Fig. 9 This is a diagram for explaining the moving mechanism in Example 4.

[0033] Fig.10 This is a diagram for explaining the detection of foreign matter adhesion in Example 5.

[0034] Fig.11 This is a diagram for explaining the detection of foreign matter adhesion in Example 6.

[0035] Fig.12 It is a diagram for explaining a method for manufacturing an electronic device. DETAILED DESCRIPTION

[0036] Modes for carrying out the invention

[0037] The following embodiments of the present invention are described in detail. However, the following embodiments are only illustrative of the preferred structures of the present invention, and the scope of the present invention is not limited to these structures. In addition, the hardware structure and software structure, processing flow, manufacturing conditions, size, material, shape, etc. of the device described below are not limited to these unless there is a particularly specific description.

[0038] The present invention is applicable to a film forming device that forms a thin film of a film forming material on the surface of a film forming object such as a substrate by evaporation or sputtering. The present invention can be understood as an electrostatic chuck, a detection device, a substrate holding device and a film forming device, as well as a detection method or a control method using these devices. The present invention can also be understood as an electronic device manufacturing device and a control method thereof, and an electronic device manufacturing method. The present invention can also be understood as a program that enables a computer to execute a detection method or a control method or a storage medium storing the program. The storage medium can also be a computer-readable non-temporary storage medium.

[0039] As the material of the substrate in the present invention, any material such as glass, resin, metal, silicon, etc. can be used. As the film-forming material, any material such as organic material, inorganic material (metal, metal oxide) can be used. The "substrate" in the following description includes a substrate on which one or more films have been formed on the surface of the substrate material. The technology of the present invention is typically applicable to manufacturing devices for electronic devices or optical components. It is particularly suitable for organic electronic devices such as organic EL displays having organic EL elements and organic EL display devices using the organic EL displays. The present invention can also be used in thin-film solar cells and organic CMOS image sensors.

[0040] <Example 1>

[0041] (Device structure)

[0042] Figure 1 1 is a top view schematically showing the structure of the film forming apparatus 1. Here, the production line of the organic EL display is described. When manufacturing the organic EL display, a substrate of a specified size is brought into the production line, and after the organic EL or metal layer is formed, post-processing steps such as cutting of the substrate are performed.

[0043] The film forming apparatus 1 includes a transfer chamber 130 arranged in the center, a plurality of film forming chambers 110 (110a to 110d) arranged around the transfer chamber 130, and a mask storage chamber 120 (120a, 120b). The film forming chamber 110 includes a chamber for performing film forming processing on the substrate 10. The mask storage chamber 120 stores masks before and after use. The transfer robot 140 provided in the transfer chamber 130 transfers the substrate S or the mask M into and out of the transfer chamber 130. The transfer robot 140 is, for example, a robot having a robot hand for holding the substrate S or the mask M mounted on a multi-jointed arm.

[0044] The passage chamber 150 transfers the substrate S transferred from the upstream side in the substrate transfer direction to the transfer chamber 130. The buffer chamber 160 transfers the substrate S that has completed the film forming process in the transfer chamber 130 to other film forming clusters on the downstream side. When receiving the substrate S from the passage chamber 150, the transfer robot 140 transfers the substrate S to one of the plurality of film forming chambers 110. The transfer robot 140 also receives the substrate S that has completed the film forming process from the film forming chamber 110 and transfers it to the buffer chamber 160.

[0045] Figure 1 The film forming apparatus 1 shown constitutes a film forming cluster, and can be connected to other film forming clusters on the upstream side or downstream side. A swirl chamber 170 for changing the direction of the substrate 10 is provided on the upstream side of the passage chamber 150 and the downstream side of the buffer chamber 160. Each chamber such as the film forming chamber 110, the mask storage chamber 120, the transfer chamber 130, the buffer chamber 160, and the swirl chamber 170 is maintained in a high vacuum state during the manufacturing process.

[0046] The film-forming materials in the multiple film-forming chambers 110a to 110d of the film-forming device 1 may be the same or different. For example, different film-forming material film-forming sources may be respectively arranged in the film-forming chambers 110a to 110d, and the substrate S forms a stacked structure while sequentially moving in the film-forming chambers 110a to 110d. In addition, by arranging the same film-forming material film-forming source in the film-forming chambers 110a to 110d, film formation may be performed in parallel with multiple substrates S. In addition, control may be performed so that the first film-forming material is arranged in the film-forming chambers 110a and 110c, and the second film-forming material is arranged in the film-forming chambers 110b and 110d, and after the first layer is formed in the film-forming chamber 110a or 110c, the second layer is formed in the film-forming chamber 110b or 110d.

[0047] Depending on the type of electrostatic chuck, the adsorption force of the substrate can be increased when a conductor is attached to the substrate. In this case, when a thin film of a metal material as an electrode layer has been formed in the region where the organic EL element is formed in the substrate (typically the central portion of the substrate), adsorption can be effectively performed. For example, when an organic layer is sequentially formed in the film forming chambers 110b to 110d on a substrate having an electrode layer formed in the film forming chamber 110a, it is effective to configure an electrostatic chuck in the film forming chambers 110b to 110d.

[0048] (Film forming room)

[0049] Figure 2 1 is a cross-sectional view showing the internal structure of the film forming chamber 110. In the film forming chamber 110, a series of film forming processes are performed, including receiving the substrate S or the mask M from the transfer robot 140, delivering the substrate S or the mask M to the transfer robot 140, aligning to adjust the relative position relationship between the substrate S and the mask M, fixing the substrate S to the mask M, and film forming. In the following description, an XYZ orthogonal coordinate system with the vertical direction as the Z direction is used, and θ represents the rotation around the Z axis.

[0050] The film forming room 110 includes a chamber 200. The interior of the chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen during film forming. The chamber 200 includes an electrostatic chuck C, a substrate support 210, a mask stage 221, and an evaporation source 240 (film forming source).

[0051] The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate. As the mask M, for example, a metal mask formed around a metal foil with a pattern supported by a frame can be used. The mask M is set on the mask stage 221. In the structure of this embodiment, film formation is performed after the substrate S is positioned and placed on the mask.

[0052] The substrate support part 210 has a plurality of claw-shaped support members 210a for receiving the substrate S transported to the film forming chamber. The electrostatic chuck C is a substrate holding member inside the film forming chamber, and uses electrostatic force to hold the substrate S supported on the substrate support part 210 by adsorption. The electrostatic chuck C abuts against the surface of the substrate S opposite to the surface in contact with the mask M (film forming surface).

[0053] In addition, a cooling member for suppressing the temperature rise of the substrate S during film formation and preventing the deterioration or degradation of the organic material may be provided inside or on the electrostatic chuck C. In addition, the substrate support 210 may also have a pressing member corresponding to the support 210a. By clamping the end of the substrate S by the support 210a and the pressing member, the substrate S can be held by the substrate support 210 in addition to the electrostatic chuck C, so that the substrate S is more stable. In addition, a magnet for attracting the mask M may be provided on the upper part of the electrostatic chuck C.

[0054] The evaporation source 240 is a film forming member including a container such as a crucible for storing the evaporation material, a heater, a baffle, a drive mechanism, an evaporation rate monitor, etc. The film forming source is not limited to the evaporation source, and a sputtering device may also be used.

[0055] An electrostatic chuck actuator 252 and an alignment stage 280 are provided at the upper outer side of the chamber 200. The electrostatic chuck actuator 252 drives the electrostatic chuck C in the Z-axis direction via an axis or the like to raise and lower it. As a result, the relative distance between the substrate S and the mask M changes in a direction intersecting with a plane along the film-forming surface of the substrate S. The electrostatic chuck actuator 252 is composed of a motor and a ball screw, a motor and a linear guide, etc. The electrostatic chuck C can be considered as a substrate holding device, or the electrostatic chuck C and the power supply 290 can be considered as a substrate holding device together. In addition, the control unit 270 can also be considered to be included in the substrate holding device. In addition, the electrostatic chuck actuator 252 can also be considered to be included in the substrate holding device.

[0056] When the electrostatic chuck C holds the substrate S supported by the substrate support portion 210, first, the electrostatic chuck actuator 252 lowers the electrostatic chuck C so that the electrostatic chuck C contacts or is sufficiently close to the substrate S. Then, the control unit 270 controls the power supply 290 to apply a predetermined adsorption voltage to the electrode embedded in the electrostatic chuck C. Thus, the substrate S is held by the electrostatic chuck C.

[0057] Next, during alignment, the electrostatic chuck actuator 252 further lowers the electrostatic chuck C to bring the substrate S close to the mask M. Then, alignment is performed on the alignment stage 280. Next, during film formation, the evaporation source 240 releases the film forming material. When film formation is completed, the electrostatic chuck actuator 252 raises the electrostatic chuck C to hand over the substrate S on which film formation has been completed to the transfer robot. Then, by setting the applied voltage to the electrostatic chuck C to a predetermined peeling voltage (e.g., 0V), the substrate is released from being held.

[0058] The alignment stage 280 is an alignment component that moves the substrate S in the XY direction and rotates it in the θ direction. The alignment stage 280 adjusts the relative position of the substrate S and the mask M on the plane along the film-forming surface of the substrate S. The alignment stage 280 includes a chamber fixing portion 281 connected and fixed to the chamber 200, an actuator portion 282 for XYθ movement, and a connection portion 283 connected to the electrostatic chuck C.

[0059] The actuator unit 282 moves the substrate S in the X direction and the Y direction and rotates in the θ direction according to the control signal sent from the control unit 270. As the actuator unit 282, an actuator formed by stacking an X actuator, a Y actuator, and a θ actuator may be used. In addition, a UVW actuator in which a plurality of actuators cooperate may be used. In addition, in this embodiment, the position of the substrate S is adjusted, but as long as the substrate S and the mask M can be relatively aligned, the position of the mask M may be adjusted, or both the substrate S and the mask M may be adjusted.

[0060] A camera 261 for optically photographing and generating image data is provided at the upper portion of the outer side of the chamber 200. The camera 261 photographs through a vacuum sealing window provided in the chamber 200. In the present embodiment, a plurality of cameras 261 are provided corresponding to the four corners of the substrate S. Each camera 261 is arranged so as to include the substrate alignment mark provided at the corner of the substrate S and the mask alignment mark provided at the corner of the mask M within the photographing range.

[0061] During alignment, the camera 261 captures the substrate S and the mask M, and outputs the image data to the control unit 270. The control unit 270 analyzes the captured image data, and obtains the position information of the substrate alignment mark and the mask alignment mark by pattern matching processing or other methods. Then, based on the positional offset of the substrate alignment mark and the mask alignment mark, the XY direction, the moving distance, and the rotation angle θ of the substrate S are calculated. Then, the calculated movement amount is converted into the driving amount of the stepping motor, servo motor, etc. of each actuator of the alignment stage 280, and a control signal is generated. In addition, a low-resolution but wide-field camera for coarse alignment and a narrow-field but high-resolution camera for fine alignment can also be used for two-stage alignment.

[0062] The control unit 270 is an information processing device that communicates with each component of the film forming device 1 via a control line not shown in the figure or wireless communication, receives data from each component, or sends a signal to each component to control the action. The control unit 270 can be composed of a computer having a processor, a memory, a storage device, an I / O, etc. In this case, the function of the control unit 270 is realized by the processor executing a program stored in the memory or the storage device. As a computer, a general-purpose personal computer can be used, and an embedded computer or a PLC (programmable logic controller) can also be used. Alternatively, a part or all of the functions of the control unit 270 can also be constituted by a circuit such as an ASIC or an FPGA. In addition, a control unit 270 can be set for each film forming chamber, and multiple film forming chambers can be controlled by one control unit 270.

[0063] The power supply 290 is a high-voltage power supply device that can supply voltage to each component of the film forming device 1 via a conductive line (not shown). The power supply 290 controls the polarity and magnitude of the applied voltage according to the instruction from the control unit 270. The power supply 290 can be said to be a voltage supply component. By controlling the polarity or magnitude of the applied voltage (adsorption voltage) to the electrode of the electrostatic suction cup C, the adsorption force on the substrate S can be controlled. In addition, the power supply 290 and the control unit 270 can also be considered to constitute the power supply of the film forming device.

[0064] The present invention is not limited to the cluster type film forming apparatus as described above, but is also applicable to an in-line type film forming apparatus in which a plurality of chambers are connected in a vacuum manner and a film is formed while a substrate held on a substrate carrier moves between chambers.

[0065] (Electrostatic chuck)

[0066] The electrostatic chuck C has a structure in which a circuit such as a metal electrode is embedded in a plate-shaped substrate made of ceramics, etc. Generally speaking, there are types of electrostatic chucks such as gradient force type, Coulomb force type, and Johnson-Rabbeck force type according to the principle of adsorption of the substrate, but in any case, the higher the applied adsorption voltage, the higher the adsorption force can be.

[0067] The gradient force type electrostatic suction cup utilizes the attraction generated toward the area with the potential gradient (gradient) generated by the potential difference between the electrodes to adsorb the object. Since the gradient force has such a characteristic that it will occur even if the adsorbed object is an insulator, even glass blanks and glass substrates without film-formed conductors can be held. When the gradient force is generated, the adsorption voltage is applied based on the potential of the adsorbed object so that the potential of the first electrode is higher than the reference and the potential of the second electrode is lower than the reference. In order to increase the gradient force and make the potential gradient as steep as possible, it is necessary to reduce the spacing between the electrodes and densely arrange the electrodes. Therefore, as an electrode for a gradient force type electrostatic suction cup, it is preferred to have two comb-tooth electrodes with a structure in which protruding comb teeth mesh with each other.

[0068] The Coulomb force type electrostatic chuck uses the electrostatic attraction generated by applying positive and negative potential voltages to two electrodes respectively to adsorb the adsorbed object, and is effective when the adsorbed object is a conductor. Therefore, if the electrode layer of the metal material is a substrate on which the film has been formed, it can be effectively adsorbed. In the case where the adsorbed object is in a floating state without being grounded, by making both the positive electrode and the negative electrode face the adsorbed object, polarization can be generated in the adsorbed object and adsorption can be performed. In addition, when the adsorbed object is grounded, it can be adsorbed by at least one of the positive electrode and the negative electrode. The Coulomb force is generally stronger than the gradient force. In addition, the larger the area of ​​the electrode facing the adsorbed object, the stronger the adsorption force. Therefore, in order to increase the adsorption force, it is necessary to increase the proportion of the electrode area to the area of ​​the electrostatic chuck as much as possible.

[0069] The Johnson-Rabbek force type electrostatic chuck is a chuck that adsorbs the adsorption object of the conductor by passing a leakage current in the order of the positive electrode, the adsorption object, and the negative electrode. It is necessary to configure a dielectric with a volume resistance value within a specified range between the electrode and the adsorption object. The Johnson-Rabbek force is generally stronger than the Coulomb force. In addition, in the Johnson-Rabbek force type electrostatic chuck, the larger the contact area with the adsorption object, the stronger the adsorption force can be.

[0070] (Detection of debris attached to the electrostatic chuck)

[0071] Reference Figure 3 , the change in the adsorption force when foreign matter is attached to the surface of the electrostatic chuck C is described. Figure 3 (a)~ Figure 3 (d) is a schematic cross-sectional view of the electrostatic chuck C, showing a state where a positive electrode 250 and a negative electrode 260 are embedded in a substrate. The positive electrode 250 and the negative electrode 260 are connected to a power source 290, and a desired voltage is applied under the control of a control unit 270, thereby generating an adsorption force corresponding to the voltage to adsorb the substrate S. Figure 3In FIG. 1 , the number of arrows pointing from the substrate S toward the electrostatic chuck C represents the magnitude of the adsorption force.

[0072] Figure 3 (a) shows a state where there is no adhering matter on the electrostatic chuck C. When a voltage is applied to the electrode in this state, an adsorption force of a designed magnitude is exerted on the entire surface of the electrostatic chuck C. Figure 3 (b) shows a case where a small amount of conductive deposits 220 are attached to the surface of the electrostatic chuck C as a result of the film-forming material flying inside the chamber 200 during the film-forming process. In this case, even if a voltage is applied to the electrode, the adsorption force cannot be exerted in the area where the deposits 220 are attached, so the adsorption force on the substrate S is reduced.

[0073] Figure 3 (c) shows a state where more attached matter 220 is attached to the surface of the electrostatic chuck C. In this case, the adsorption force on the substrate S is further reduced. Figure 3 (b) or Figure 3 In the state (c), the suction force to support the weight of the substrate S cannot be obtained, and the substrate S may not be held. Even if the substrate S can be held, the region where the suction force cannot be exerted may bend, and the film forming accuracy may be reduced. Figure 3 (d) shows a case where the accumulation of the conductor has further progressed and a conductive film has been formed on the entire surface of the electrostatic chuck C. In this state, the suction force cannot be exerted on the entire surface, and the substrate S cannot be held.

[0074] Therefore, in the film forming process using the film forming apparatus 1, it is necessary to check the adhesion of foreign matter on the surface of the electrostatic chuck C regularly or at a desired time, and remove the foreign matter or replace the electrostatic chuck C if any foreign matter is adhered.

[0075] Figure 4 It is a structure for detecting conductive attachments on the surface of the electrostatic chuck C of the present embodiment. A first switch 320 capable of obtaining a connected state and a disconnected state is provided on the conductive wire that supplies power from the power supply 290 to the electrode of the electrostatic chuck C. In addition, an electrostatic capacitance detection unit 310 connected to the two electrodes of the electrostatic chuck C is provided on the film forming device 1. As the electrostatic capacitance detection unit 310, a capacitive sensor that measures the electrostatic capacitance value between the two electrodes and outputs it as an analog signal to the control unit 270 can be used. In this capacitive sensor, the more the amount of conductor attached between the two electrodes increases, the higher the electrostatic capacitance value is detected. A second switch 325 capable of obtaining a connected state and a disconnected state is also provided on the conductive wire connecting the electrostatic capacitance detection unit 310 and the electrostatic chuck C. Each switch can be said to be a switching component.

[0076] The control unit 270 performs digital conversion on the detection signal based on the capacitive sensor, and determines the presence and degree of foreign matter attachment by comparing it with the electrostatic capacitance value measured in advance and stored in the memory. In this embodiment, the electrostatic capacitance detection unit 310 is equivalent to a detection component for detecting the state of the adsorption surface when the electrostatic chuck C does not adsorb the substrate. In addition, the electrostatic capacitance detection unit 310 and the control unit 270 can also be considered as a detection component. The detection component is typically connected to the circuit between the power supply and the electrode.

[0077] In addition, in the film forming apparatus 1, a notification unit 275 can be provided to receive instructions from the control unit 270 and notify the user of the attachment state of the attached object to the electrostatic chuck C. The notification unit 275 can have any structure as long as it is a component that can notify the user of information. For example, in the case where the control unit 270 is a computer, a monitor, a speaker, etc. of the computer can be used, and a dedicated lamp or speaker for notifying the attachment of foreign matter can also be configured. When the control unit 270 detects an abnormal state that should be notified about the electrostatic chuck C, the user is notified of the information via the notification unit 275.

[0078] In addition, when an abnormal state is detected, the control unit 270 may increase the set value of the adsorption voltage applied during the next film formation, instead of or in addition to the notification by the notification unit 275, so as to reliably adsorb the substrate S. Specifically, when the detected value of the electrostatic capacitance is higher than a predetermined value, or when the amount of the attached matter obtained from the detected value is greater than a predetermined amount, the set value of the adsorption voltage is increased.

[0079] The electrostatic capacitance detection unit 310 of the present embodiment detects electrostatic capacitance when no voltage is applied from the power supply 290 and therefore the substrate S is not adsorbed. Moreover, as shown in the figure, by having a first switch 320 and a second switch 325, the path can be reliably switched when voltage is applied and when the electrostatic capacitance is detected. That is, when detecting the electrostatic capacitance, the first switch 320 is set to the cut-off state, and the second switch 325 is set to the connected state (first state), and when applying voltage, the first switch 320 is set to the connected state, and the second switch 325 is set to the cut-off state (second state). Therefore, there is no need to use a device corresponding to a high voltage as the electrostatic capacitance detection unit 310, and the structure can be simplified. The state detection of the electrostatic suction cup C in the present embodiment is performed when the substrate S is not adsorbed, such as when the film forming device is set up, after a specified number of substrates are film-formed, after the device has been operated for a specified time, during regular or temporary maintenance, etc.

[0080] Table 1 shows an example of the relationship between the state of the electrostatic chuck C in this embodiment and the detection value. As described above, the greater the amount of attachment, the greater the detection value. In addition, the numerical value or the attachment amount shown in Table 1 is an example, and is appropriately set according to the structure of the electrostatic chuck C, the type of film-forming material, the required adsorption force, etc. The control unit 270 can notify the user of the detection value itself, or notify the user of the attachment status determined based on the detection value. In addition, the stage at which the notification is made can be set arbitrarily.

[0081] Table 1

[0082] As described above, according to the present embodiment, since the state of the adsorption surface of the electrostatic chuck C can be detected based on the detection value of the electrostatic capacitance, appropriate countermeasures such as replacement or removal of attached matter can be taken if there is an abnormality in the electrostatic chuck C. Therefore, film formation will not be performed in a state where the adsorption force of the electrostatic chuck C is reduced, and film formation with good precision can be performed.

[0083] <Example 2>

[0084] Next, a second embodiment of the present invention will be described. The same components as those of the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

[0085] Figure 5 This is a structure for detecting conductive attachments on the surface of the electrostatic chuck C of this embodiment. The electrostatic capacitance detection unit 310 of this embodiment is provided between the power supply 290 and the electrostatic chuck C. The function of the electrostatic capacitance detection unit 310 of this embodiment to measure the electrostatic capacitance value between the two electrodes and output it to the control unit 270 is the same as that of the first embodiment, but the electrostatic capacitance measurement is also performed during the application of the adsorption voltage from the power supply 290. Therefore, the electrostatic capacitance detection unit 310 of this embodiment is required to have performance corresponding to the passage of high voltage.

[0086] In this embodiment, as in the first embodiment, as the amount of the conductor attached between the two electrodes increases, a higher electrostatic capacitance value is detected, so that the user can be informed of the state of the attached matter attached to the electrostatic chuck C.

[0087] Moreover, in the structure of this embodiment, the electrostatic capacitance can be continuously detected even during the process of applying a high voltage for adsorbing the substrate S. Here, it is known that the electrostatic chuck C can effectively adsorb the substrate S on which a conductive film (e.g., an electrode layer of a metal material) has been formed, but when the electrostatic chuck C adsorbs such a substrate S with a conductive film, the detection value of the electrostatic capacitance becomes high, just like when a conductor is attached to the electrostatic chuck C. Therefore, the control unit 270 can also judge whether the substrate S is adsorbed on the electrostatic chuck C or the substrate S is peeled off from the electrostatic chuck C by comparing the detection value of the electrostatic capacitance with a preset threshold value. In addition, when the control unit 270 detects a sudden change in the detection value, it can be judged that the adsorption state or peeling state of the substrate S has changed.

[0088] In addition, since the higher the detection value of the electrostatic capacitance is, the lower the adsorption force is, the closer the substrate S is to the electrostatic chuck C. Therefore, the control unit 270 of this embodiment can also detect the closeness based on the detection value of the electrostatic capacitance. In addition, when the control unit 270 determines that the closeness is lower than the specified value, it can also increase the adsorption voltage to increase the closeness.

[0089] <Example 3>

[0090] Next, a third embodiment of the present invention will be described. The same components as those of the above-described embodiments are denoted by the same reference numerals, and description thereof will be omitted.

[0091] Figure 6 (a) is a schematic plan view showing the structure of an electrostatic chuck C according to this embodiment. Figure 6 (b) Yes Figure 6 (a) is a schematic cross-sectional view taken along the line AA'. The electrostatic chuck C in this embodiment is divided into 12 regions (3 vertically and 4 horizontally) in total (C 11 ~C 43 ). The control unit 270 and the power supply 290 can perform application control of the adsorption voltage for each region individually.

[0092] The electrostatic capacitance detection unit 310 of the present embodiment has a plurality of electrostatic capacitance detection sensors corresponding to each area. Thus, the electrostatic capacitance can be measured in parallel, which can shorten the measurement time. In addition, a structure can be adopted in which a single electrostatic capacitance detection unit 310 and each area can be connected or disconnected using a switch. Then, the electrostatic capacitance is measured sequentially while switching the area of ​​the connection object. In this case, the measurement time becomes longer, but the device structure can be simplified.

[0093] According to such a structure, it is possible to determine in which area of ​​the electrostatic chuck C the electrostatic capacitance value exceeds the threshold value. Therefore, in particular, when a large electrostatic chuck C corresponding to a large substrate is used, it is possible to easily determine the location where the foreign matter is attached. In addition, in the case where the foreign matter is not attached to the entire adsorption surface of the electrostatic chuck C but to a specific area, the adsorption force can be increased by increasing the applied voltage to the electrode in the adsorption area to compensate for the decrease in the adsorption force in the adsorption area.

[0094] In addition, as in Example 2, when a detection member capable of detecting electrostatic capacitance even during application of an adsorption voltage is connected to each divided region of the electrostatic chuck C, it is possible to detect the adsorption state of the substrate S in each divided region of the electrostatic chuck C. In this case, the degree of adhesion between the electrostatic chuck C and the substrate S can be measured for each position.

[0095] (Variation)

[0096] Figure 7 (a) is a schematic plan view showing the structure of an electrostatic chuck C in a modified example of the present embodiment. Figure 7 (b) Yes Figure 7 (a) is a schematic cross-sectional view of the line BB'. The electrostatic suction cup C in this modification is divided into four regions, namely, region C2, region C3, and region C4, from region C1 in the center toward the outside. The control unit 270 and the power supply 290 can control the applied voltage for each region separately. In this modification, instead of configuring an electrostatic capacitance detection unit for each region, the connection destination of a single electrostatic capacitance detection unit can be switched by a switch.

[0097] This modification also makes it possible to identify the region of the electrostatic chuck C to which foreign matter is attached. This modification is effective when, for example, foreign matter is attached from the outer circumference to the inner circumference of the electrostatic chuck C or vice versa.

[0098] In addition, the method of dividing the electrostatic chuck C is not limited to Figure 6 Such strip division or Figure 7 The number of divisions is not limited to the example shown in the figure. The division method and the number of divisions can be appropriately determined according to the size of the electrostatic chuck C, the overall structure of the device, the manufacturing cost, the required detection accuracy, etc.

[0099] <Example 4>

[0100] Next, a fourth embodiment of the present invention will be described. The same components as those of the above-described embodiments are denoted by the same reference numerals, and description thereof will be omitted.

[0101] Figure 8The detection component of the state of attachment of foreign matter on the surface of the electrostatic suction cup C of this embodiment is shown. The detection component of this figure is a camera 370 as a photographing component capable of photographing the adsorption surface of the electrostatic suction cup C. In addition, the camera 370 and the control unit 270 can also be considered as a detection component. The camera 370 sends the image obtained by photographing to the control unit 270. The control unit 270 analyzes the captured image to determine the presence, amount, and position of attachment of the electrostatic suction cup C. Existing image processing technology can be used for image-based detection of attachments. For example, the captured image can be compared with an image of a state without attachments that was previously captured and stored in a memory, and an analysis based on the difference can be performed. In addition, foreign matter detection processing using edge detection processing of the captured image and foreign matter detection using machine learning can also be used. The control unit 270 notifies the user of information about the position and amount of attachments detected by image analysis via the notification unit 275.

[0102] In the example shown in the figure, the camera 370 is mounted on a moving mechanism 375. The moving mechanism 375 is a component that moves the camera 370 in a plane parallel to the adsorption surface of the electrostatic chuck C. The moving mechanism 375 moves the camera 370 on the guide rail at a predetermined scanning speed under the control of the control unit 270, thereby being able to capture the entire electrostatic chuck C. In addition, in the case of a structure in which the film is formed while scanning the evaporation source 240, the moving mechanism 375 may move both the evaporation source 240 and the camera 370.

[0103] Next, an example of the moving mechanism 375 is shown. Fig. 9 (a) is an example of using a uniaxial moving mechanism, and the moving mechanism 375 has a guide rail 377 and a driving component such as a motor. In this example, a plurality of cameras 370 are arranged in a direction orthogonal to the scanning direction, and the width of the electrostatic chuck C in the orthogonal direction can be photographed at once. Fig. 9 (b) is an example of using a biaxial moving mechanism, which includes a first guide rail 377 and a second guide rail 379. In this example, a single camera 370 captures an image of the entire electrostatic chuck C while moving in the scanning direction and the orthogonal direction.

[0104] Fig. 9 (c) shows another example of the moving mechanism 375. The moving mechanism 375 is a robot arm having connecting rods 385a to 385c and joints 387a to 387c and arranged at the bottom of the chamber 200. The camera 370 is provided on the connecting rod 385c, and takes pictures while moving in a plane parallel to the adsorption surface of the electrostatic suction cup C as the robot arm moves. According to this structure, the desired position can be quickly photographed according to the user's instructions or the control of the control unit 270. In addition, in Fig. 9In the case of (c), the moving mechanism 375 may also serve as a moving mechanism for the evaporation source 240 and a moving mechanism for the camera 370 .

[0105] Furthermore, as long as the camera 370 can capture the entire suction surface of the electrostatic chuck, the moving mechanism 375 is not limited to the illustrated example. Alternatively, a wide-angle camera capable of capturing the entire electrostatic chuck C may be used as the camera 370 instead of moving the camera 370.

[0106] <Example 5>

[0107] Next, a fifth embodiment of the present invention will be described. The same components as those of the above-described embodiments are denoted by the same reference numerals, and description thereof will be omitted.

[0108] Fig.10 The detection component showing the adhesion state of foreign matter on the surface of the electrostatic chuck C of the present embodiment. The detection component of this figure is a laser rangefinder 390 as a distance measuring component for measuring the distance to the adsorption surface of the electrostatic chuck C. The laser rangefinder 390 irradiates a laser in the direction of the electrostatic chuck C and receives the reflected light from the electrostatic chuck C. The control unit 270 calculates the distance to the electrostatic chuck C based on the time from irradiation to light reception. The control unit 270 also stores information related to the distance to the electrostatic chuck C at each position that the laser rangefinder 390 can obtain in the memory based on the information when the film forming device was designed. Then, the control unit 270 compares the actually measured distance with the distance stored in the memory to determine whether foreign matter is attached.

[0109] In addition, as long as the distance to the electrostatic chuck C can be measured, the distance measuring component is not limited to the type using laser. It can also be a distance meter using light or radio waves other than laser, such as a radar using millimeter waves or microwaves, a distance sensor using ultrasonic waves, etc. Fig.10 , an example of using a two-axis moving mechanism 375 to move the laser rangefinder 390 is shown. However, if the laser rangefinder 390 is moved in a plane parallel to the electrostatic chuck C, a one-axis moving mechanism, a robot arm, or other moving mechanisms may be used.

[0110] <Example 6>

[0111] Next, a sixth embodiment of the present invention will be described. The same components as those of the above-described embodiments are denoted by the same reference numerals, and description thereof will be omitted.

[0112] Fig.11The detection component of the foreign matter adhesion state on the surface of the electrostatic chuck C of this embodiment is shown. The detection component in this figure is a current measuring device 395 as a current measuring device that brings a detection probe 397 close to the electrostatic chuck C to measure the current. Here, the current intensity of the leakage current in the electrostatic chuck C changes according to the amount of the conductor attached to the electrostatic chuck C. Therefore, the control unit 270 can determine the amount of the conductor attached by measuring the leakage current using the current measuring device 395.

[0113] exist Fig.11 , an example is shown in which the detection probe 397 is moved using the robot arm type moving mechanism 375. However, a 1-axis or 2-axis moving mechanism or other moving mechanisms may also be used.

[0114] <Example 7>

[0115] Next, a seventh embodiment of the present invention will be described. The same reference numerals are used for the same structures as those in the above-mentioned embodiments, and the description thereof will be omitted. Figures 4 to 7 The structure shown in FIG. 1 is provided with a capacitive sensor. Figure 4 In the structure, as shown in Table 1, the adhesion state and adhesion amount of foreign matter such as the film-forming material with respect to the electrostatic chuck C are detected with reference to the detection value of the electrostatic capacitance.

[0116] Here, as described above, when the electrostatic chuck C adsorbs the substrate S with a conductive film, the detected value of the electrostatic capacitance becomes higher, similarly to when foreign matter is attached to the electrostatic chuck C. It is also known that the more foreign matter is attached, the smaller the change in electrostatic capacitance when the substrate is adsorbed.

[0117] Therefore, the control unit 270 of this embodiment detects the presence or absence of foreign matter and the attachment condition (attachment amount) based on the change in electrostatic capacitance when the substrate S is adsorbed. That is, the control unit 270 detects the attachment condition of foreign matter based on a table or mathematical formula pre-stored in a memory indicating the relationship between the attachment condition of foreign matter and the change in electrostatic capacitance value when the substrate is adsorbed, and notifies the user.

[0118] According to the structure of this embodiment, in addition to or in addition to the methods of embodiments 1 to 3, the presence or absence of foreign matter and the state of foreign matter adhesion can be detected based on the change in electrostatic capacitance when the substrate is adsorbed. Therefore, the detection accuracy can be further improved.

[0119] <Example 8>

[0120] Next, an eighth embodiment of the present invention will be described. The same reference numerals are used for the same structures as those in the above-mentioned embodiments, and the description thereof will be omitted. Figures 4 to 7 The structure shown has a capacitive sensor.

[0121] Here, the wear of the electrostatic chuck C is studied. The electrostatic chuck C has a structure in which a circuit is embedded in a base material such as ceramic, but the base material gradually wears out over time. According to the inventors' understanding, as long as there is no foreign matter attached to the electrostatic chuck C, the electrostatic capacitance value before and after wear is almost unchanged. However, the change (increase) in the electrostatic capacitance value when the substrate S is adsorbed on the electrostatic chuck C is greater after wear than before wear.

[0122] Therefore, the control unit 270 of the present embodiment detects the presence or absence of wear of the electrostatic chuck C and the degree of wear based on the amount of change in electrostatic capacitance when the substrate S is adsorbed. That is, the control unit 270 detects the wear condition of the electrostatic chuck based on a table or mathematical formula pre-stored in a memory indicating the relationship between the presence or absence or degree of wear of the electrostatic chuck C and the amount of change in electrostatic capacitance value when the substrate is adsorbed, and notifies the user.

[0123] According to the structure of this embodiment, the wear condition of the electrostatic chuck C can be detected based on the change in electrostatic capacitance when the substrate is attracted. Therefore, for example, the life and replacement time of the electrostatic chuck C can be calculated and notified to the user.

[0124] <Example 9>

[0125] Next, the ninth embodiment of the present invention will be described. The same reference numerals are used for the same structures as those in the above-mentioned embodiments, and the description thereof will be omitted. Fig.10 The method is performed by using a structure including a distance measuring component as shown.

[0126] exist Fig.10 In the example of FIG. 2 , the control unit 270 compares the distance to the electrostatic chuck C measured by a distance meter or the like with the distance stored in the memory, and detects the attachment status of foreign matter to the electrostatic chuck C. In the present embodiment, in addition to the attachment status of foreign matter, the control unit 270 also detects the attachment status of foreign matter and the wear status of the electrostatic chuck C. That is, when the distance to the electrostatic chuck C is shorter than the value stored in the memory, the control unit 270 determines that foreign matter is attached to the electrostatic chuck C. On the other hand, when the distance to the electrostatic chuck C is longer than the value stored in the memory, it is determined that the electrostatic chuck C is worn.

[0127] As described above, there are cases where the condition of foreign matter adhesion is different in each area of ​​the electrostatic chuck C. According to the present embodiment, by measuring the distance to the electrostatic chuck C for each portion using a scanning distance meter or the like, the condition of foreign matter adhesion in each such area can also be detected. For example, when measuring the distance while scanning the electrostatic chuck C, there are "(a) a position where the distance is longer than when it was a new product" and "(b) a position where the distance has not changed from when it was a new product (or the distance is shorter)". In this case, since the wear of the electrostatic chuck C occurs as a whole, it is generally believed that since the amount of adhesion is large at position (a), the decrease in distance due to foreign matter adhesion is greater than the increase in distance due to wear. On the other hand, it is generally believed that at position (b), the increase in distance due to wear is balanced with the decrease in distance due to foreign matter adhesion (or the latter prevails).

[0128] According to the configuration of this embodiment, in addition to or separately from the attachment of foreign matter to the electrostatic chuck C, the wear condition of the electrostatic chuck C can also be detected. Therefore, for example, the life and replacement time of the electrostatic chuck C can be calculated and notified to the user.

[0129] <Method for manufacturing electronic device>

[0130] Next, an example of a method for manufacturing an electronic device using the film-forming apparatus of this embodiment will be described. Next, as an example of an electronic device, the structure of an organic EL display device will be shown, and a method for manufacturing the organic EL display device will be described.

[0131] First, the organic EL display device to be manufactured will be described. Fig.12 (a) is an overall view of the organic EL display device 700. Fig.12 (b) shows the cross-sectional structure of one pixel.

[0132] like Fig.12 As shown in (a), in the display area 701 of the organic EL display device 700, a plurality of pixels 702 having a plurality of light-emitting elements are arranged in a matrix. The details will be described later, and each light-emitting element has a structure having an organic layer clamped by a pair of electrodes. In addition, the pixel mentioned here refers to the smallest unit that can display the desired color in the display area 701. In the case of the organic EL display device of this embodiment, the pixel 702 is composed of a combination of a first light-emitting element 702R, a second light-emitting element 702G, and a third light-emitting element 702B that display different light. The pixel 702 is mostly composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but it can also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element. There is no particular limitation as long as it is at least one color.

[0133] Fig.12 (b) Yes Fig.12 (a) is a partial cross-sectional schematic diagram of the BB line. The pixel 702 is composed of a plurality of light-emitting elements, each of which has a first electrode (anode) 704, a hole transport layer 705, any one of the light-emitting layers 706R, 706G, and 706B, an electron transport layer 707, and a second electrode (cathode) 708 on a substrate 703. Among them, the hole transport layer 705, the light-emitting layers 706R, 706G, 706B, and the electron transport layer 707 are equivalent to organic layers. In addition, in this embodiment, the light-emitting layer 706R is an organic EL layer that emits red light, the light-emitting layer 706G is an organic EL layer that emits green light, and the light-emitting layer 706B is an organic EL layer that emits blue light. The light-emitting layers 706R, 706G, and 706B are formed into patterns corresponding to light-emitting elements (sometimes also described as organic EL elements) that emit red light, green light, and blue light, respectively.

[0134] In addition, the first electrode 704 is formed separately for each light-emitting element. The hole transport layer 705, the electron transport layer 707, and the second electrode 708 can be formed by a plurality of light-emitting elements 702R, 702G, 702B, or can be formed for each light-emitting element. In addition, in order to prevent the first electrode 704 and the second electrode 708 from short-circuiting due to foreign matter, an insulating layer 709 is provided between the first electrode 704. Moreover, since the organic EL layer is degraded by moisture or oxygen, a protective layer 710 is provided to protect the organic EL element from moisture or oxygen.

[0135] exist Fig.12 In (b), the hole transport layer 705 and the electron transport layer 707 are represented by one layer, but depending on the structure of the organic EL display element, they can also be formed by multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 704 to the hole transport layer 705 can also be formed between the first electrode 704 and the hole transport layer 705. Similarly, an electron injection layer can also be formed between the second electrode 708 and the electron transport layer 707.

[0136] Next, an example of a method for manufacturing an organic EL display device will be described in detail.

[0137] First, a circuit (not shown) for driving the organic EL display device and a substrate (mother glass) 703 on which a first electrode 704 is formed are prepared.

[0138] Acrylic resin is formed by spin coating on the substrate 703 having the first electrode 704 formed thereon, and the acrylic resin is patterned by photolithography to form an opening in the portion where the first electrode 704 is formed, thereby forming an insulating layer 709. The opening corresponds to a light emitting region where the light emitting element actually emits light.

[0139] The substrate 703 patterned with the insulating layer 709 is placed on a substrate carrier provided with an adhesive member. The substrate 703 is held by the adhesive member. The substrate 703 is moved into the first organic material film forming device, turned over, and the hole transport layer 705 is formed as a common layer on the first electrode 704 in the display area. The hole transport layer 705 is formed by vacuum evaporation. In fact, since the hole transport layer 705 is formed to a larger size than the display area 701, a high-precision mask is not required.

[0140] Next, the substrate 703 formed with the hole transport layer 705 is carried into the second organic material film forming apparatus. The substrate and the mask are aligned, the substrate is placed on the mask, and a red light emitting layer 706R is formed on the portion of the substrate 703 where the element emitting red light is arranged.

[0141] Similar to the film formation of the light-emitting layer 706R, the light-emitting layer 706G emitting green light is formed by the third organic material film-forming device, and the light-emitting layer 706B emitting blue light is formed by the fourth organic material film-forming device. After the film formation of the light-emitting layers 706R, 706G, and 706B is completed, the electron transport layer 707 is formed on the entire display area 701 by the fifth film-forming device. The electron transport layer 707 is formed as a layer common to the three-color light-emitting layers 706R, 706G, and 706B.

[0142] The substrate on which the electron transport layer 707 has been formed is moved by a metallic vapor deposition material film forming apparatus, and the second electrode 708 is formed.

[0143] After that, the substrate 703 is moved to a plasma CVD device to form a protective layer 710, completing the film forming process on the substrate 703. After flipping, the substrate 703 is separated from the substrate carrier by peeling off the adhesive member from the substrate 703. After that, the organic EL display device 700 is completed by cutting.

[0144] From the time when the substrate 703 patterned with the insulating layer 709 is carried into the film forming apparatus until the film forming of the protective layer 710 is completed, if the substrate is exposed to an atmosphere containing moisture or oxygen, the light-emitting layer composed of the organic EL material may be degraded by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0145] Description of Reference Numerals

[0146] 1: film forming device, 310: electrostatic capacitance detection unit, C: electrostatic chuck, S: substrate.

Claims

1. A film forming device for forming a film on a substrate, characterized in that: The film forming device comprises: An electrostatic chuck having an adsorption surface for adsorbing the substrate; and The detection component detects a state of the adsorption surface where the substrate is not adsorbed.

2. The film forming device according to claim 1, characterized in that: The electrostatic chuck has an electrode to which a voltage for adsorbing the substrate is applied, The detection component detects the electrostatic capacitance of the electrode.

3. The film forming device according to claim 2, characterized in that: The detection component detects the state or presence of attachment of the attached matter to the adsorption surface based on the detection value of the electrostatic capacitance.

4. The film forming device according to claim 3, characterized in that: The detection component determines that the amount of the attached matter is greater as the detection value of the electrostatic capacitance is higher.

5. The film forming device according to claim 1, characterized in that: The detection component detects a state or presence of attachment of an attachment to the adsorption surface.

6. The film forming device according to claim 1, characterized in that: The electrostatic chuck has an electrode to which a voltage for adsorbing the substrate is applied, The film forming device includes a voltage supply unit that controls a voltage applied to the electrode based on a detection result of the detection unit.

7. The film forming device according to claim 6, characterized in that: The detection component detects the state or presence of the attached object attached to the adsorption surface. The voltage supplying means increases the voltage when the amount of the deposits is greater than a predetermined amount.

8. The film forming device according to claim 6, characterized in that: The film forming device includes a switching member that switches between a first state in which the electrode is connected to the detection member and is not connected to the voltage supply member and a second state in which the connection between the detection member and the electrode is cut off.

9. The film forming device according to claim 6, characterized in that: The detection component is connected to a circuit between the electrode and the voltage supply component.

10. The film forming device according to claim 1, characterized in that: The detection component also detects the degree of contact between the substrate and the electrostatic chuck.

11. The film forming device according to claim 10, characterized in that: The film forming device includes a voltage supply unit that controls a voltage supplied to the electrostatic chuck based on a detection result of the detection unit. The voltage supplying unit increases the voltage when the degree of contact between the substrate and the electrostatic chuck is lower than a predetermined value.

12. The film forming device according to claim 1, characterized in that: The electrostatic chuck is divided into a plurality of regions, each of which has an electrode to which a voltage for adsorbing the substrate is applied. The detection unit detects the electrostatic capacitance of the electrode for each of the plurality of regions.

13. The film forming device according to claim 12, characterized in that: A set value of the adsorption voltage applied to the electrode of the region determined by the detection unit to be abnormal among the plurality of regions is increased.

14. The film forming device according to claim 1, characterized in that: The detection component is a photographing component that photographs the electrostatic chuck, and detects the state of the adsorption surface based on the photographed image.

15. The film forming device according to claim 1, characterized in that: The detection member is a distance measurement member that measures the distance to the electrostatic chuck, and detects the state of the attraction surface based on the distance from the detection member to the electrostatic chuck.

16. The film forming device according to claim 1, characterized in that: The detection unit is a current measuring unit that measures a leakage current of the electrostatic chuck, and detects the state of the attraction surface based on the measured current intensity.

17. The film forming device according to any one of claims 14 to 16, characterized in that: The film forming apparatus further includes a moving mechanism that moves the detection member within a plane parallel to the attraction surface of the electrostatic chuck.

18. The film forming device according to claim 1, characterized in that: The film forming apparatus further includes a notification unit configured to notify a user when the detection unit detects an abnormality in the state of the adsorption surface.

19. The film forming device according to claim 2, characterized in that: The detection component detects a change in electrostatic capacitance when the electrostatic chuck adsorbs the substrate.

20. The film forming device according to claim 1, characterized in that: The detection component also detects the wear condition of the electrostatic chuck.

21. A detection device, arranged in a film forming device for forming a film on a substrate adsorbed by an adsorption surface of an electrostatic chuck, characterized in that: The detection device includes a detection unit that detects a state in which the adsorption surface is not adsorbing the substrate.

22. A method for controlling a film forming device for forming a film on a substrate adsorbed by an adsorption surface of an electrostatic chuck, characterized in that: The control method includes a step of detecting a state in which the adsorption surface of the substrate is not adsorbed by a detection member.

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