An apparatus and method for preparing a perovskite solar absorber layer

Abstract

This invention discloses an apparatus and method for preparing a perovskite solar absorption layer. The apparatus includes a first and a second process gas purging module, an isolation gas purging module, and an extraction module. The first and second process gases are mixed gases, consisting of a single-component organic source and an inorganic source, respectively, which are heated and sublimated and then carried out by a carrier gas. During coating, the process gas purging module blows out a ribbon-shaped gas flow from its port. A conveying component supports the coating substrate, allowing it to pass through the ribbon-shaped gas flow. The ribbon-shaped gas flow blown out by the first and second process gas purging modules sweeps across the surface of the coating substrate, depositing the perovskite solar absorption layer. The cooperation of the isolation gas purging module, the extraction module, and the sealed conveying component ensures that the environments of the first and second process gas coating areas are independent and stable, thereby enabling the deposition of a large-size, high-quality, and highly uniform light-absorbing layer under normal pressure.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic technology, and more specifically, to an apparatus and method for preparing a perovskite solar absorber layer. Background Technology

[0002] Perovskite solar cells, with their excellent photoelectric conversion efficiency, have become a highly efficient method for obtaining clean energy in the future. To achieve industrial-scale production, a method and equipment capable of fabricating perovskite solar absorber layers on a large scale are needed. Currently, there are two main methods for fabricating large-scale perovskite solar absorber layers: vacuum evaporation physical vapor deposition and slot coating.

[0003] Vacuum evaporation physical vapor deposition of perovskite solar absorber layers is achieved by heating the perovskite absorber layer precursor in a vacuum environment to evaporate and deposit it onto the substrate. This method shows excellent performance in terms of film density, stoichiometry of components, crystal quality, shape preservation, and batch repeatability. However, halides are easily affected by heating temperature during evaporation, requiring precise control of heating power and cooling rate. In addition, if large-area preparation is required, the vacuum chamber needs to be enlarged to ensure the film deposition range and uniformity, which undoubtedly leads to higher costs. The slot coating method for preparing perovskite solar absorber layers involves pumping a prepared precursor solution into a pipeline and then spraying it onto the substrate surface through a slot. By controlling parameters such as the liquid flow rate, the substrate movement speed, and the distance between the nozzle and the substrate, a perovskite solar absorber layer of a certain quality and thickness can be obtained. The advantages of this method are that it can form coatings on large-area substrates, especially flexible substrates, and it has low production efficiency and low cost. However, since this method is based on solution spraying, even small changes in the viscosity, surface tension, density, and flow behavior of the liquid can lead to significant differences in coating quality. Any fluctuation can cause uneven film thickness or problems such as streaks and bubbles, which can pose risks to the photoelectric conversion efficiency and long-term reliability of the light-absorbing layer. At the same time, poor batch repeatability leads to a loss of manufacturing yield. Summary of the Invention

[0004] The purpose of this invention is to provide an apparatus for preparing a novel structure of perovskite solar absorber layer to meet the requirements of perovskite solar cells for the preparation of large-size, high-quality, and highly uniform absorber layers.

[0005] The objective of this invention is achieved through the following technical solution: an apparatus for preparing a perovskite solar absorption layer, comprising a deposition chamber, a conveying assembly, a heating module, and a gas purging module. The gas purging module and the conveying assembly are distributed opposite to each other in the deposition chamber, forming a deposition channel for moving a coating substrate. The heating module is used to heat the coating substrate. The gas purging module includes at least one first process gas purging module and at least one second process gas purging module, as well as an isolation gas purging module and an extraction module. The gas purging module has its gas purging ports located between and outside the gas purging ports of each process gas purging module, while the extraction module has its gas purging ports spaced apart between each pair of gas purging ports.

[0006] The first process gas is a mixed gas carried out by a carrier gas after the single-component organic source is heated and sublimated.

[0007] The second process gas is a mixed gas that is heated and sublimated from a single-component inorganic source and carried out by a carrier gas;

[0008] The conveying assembly is sealed, preventing airflow from passing directly through when the coated substrate is located in the air vent area.

[0009] During the coating process, both the isolation gas purging module and the process gas purging module blow out ribbon-shaped airflows. The conveying component supports the coating substrate and allows it to pass through the ribbon-shaped airflow range. The ribbon-shaped airflows blown out by the first and second process gas purging modules sweep across the surface of the coating substrate, depositing the perovskite solar absorption layer. Excess gas is extracted through the air outlet of the extraction module, and the length of the extraction outlet is greater than or equal to the length of the air outlets of the isolation gas purging module and the process gas purging module.

[0010] The aforementioned vent region refers to the area defined by the vents, specifically the area defined by the two outermost isolating gas vents. Located within the vent region means that the coating substrate overlaps with the vent region in the opposite direction.

[0011] The first process gas used in the first process gas purging module may use the same or different organic sources, such as FAI (formamidine iodide), FACl (formamidine chloride), FABr (formamidine bromide), MAI (methylamine iodide), MACl (methylamine chloride), MABr (methylamine bromide), or PEAI (phenylethylammonium iodide), etc.

[0012] The inorganic source used for the second process gas in the second process gas purging module may be the same or different. The inorganic source may be PbI2 (lead iodide), PbBr2 (lead bromide), PbCl2 (lead chloride), CsI (cesium iodide), CsCl (cesium chloride), or CsBr (cesium bromide), etc.

[0013] The gas ports of the first process gas purging module, the second process gas purging module, the isolation gas purging module, and the extraction module are set together to form an integrated structure, which facilitates the installation of the gas ports in the deposition chamber.

[0014] The air passages of each air port of the isolation gas purging module are interconnected, and the air passages of each air port of the extraction module are interconnected, which can reduce the number of power mechanisms.

[0015] The gas inlets of both the isolation gas purging module and the process gas purging module adopt a slit design.

[0016] The air inlet of the extraction module is also a slit, and the two ends of the air inlets of each extraction module are connected together, and the air inlets located between them are framed within its range. This structure helps to make the gas field environment in the internal deposition area more stable.

[0017] The present invention also provides a method for preparing a perovskite solar absorber layer using the aforementioned equipment, comprising the following steps:

[0018] The heating module is activated to preheat the substrate, and the gas purging module is also activated. Then, the conveying assembly is controlled to move the substrate back and forth in the deposition channel, repeatedly adsorbing the first and second process gases to obtain the perovskite solar absorption layer of the required thickness. Finally, the substrate is annealed to ensure its performance meets requirements. The preheating temperature is controlled between 25-300℃; the annealing temperature is also controlled between 25-300℃.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] 1) The width of the deposition channel of the device of the present invention can be made very large without affecting the high quality and high uniformity of the light-absorbing layer. The substrate can also be moved back and forth in the deposition channel by the conveying component to obtain the required thickness. The cost of the device can be well controlled. The device of the present invention can be used to prepare perovskite solar absorption layers of flexible substrates.

[0021] 2) The perovskite solar absorption layer of the present invention is formed by adsorbing the precursor in the gas phase onto the substrate. The deposition process does not involve a solution, so there is no need to worry about streaks or bubbles, thus enabling the preparation of a high-quality and highly uniform light-absorbing layer.

[0022] 3) By purging the isolation gas and combining it with gas extraction, this invention prevents the cross-reaction of the first process gas and the second process gas and the phenomenon of airflow agglomeration. It also isolates the influence of surrounding particulate matter, water vapor and other factors, avoiding these factors from changing the uniformity and stability of the substrate's chemical composition. This not only allows the deposition process of this invention to be carried out under normal pressure, but also maintains the high quality and uniformity of the film.

[0023] 4) In this invention, organic and inorganic sources, as well as different types of materials, are processed separately. The evaporation process is easy to control and the evaporation rate is more stable. Evaporated particles are carried out by the carrier gas, which makes the number and energy of particles received on the substrate surface more uniform, and makes the deposition rate, stoichiometric composition, etc. of the film more stable. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the device structure according to a preferred embodiment of the present invention;

[0025] Figure 2 for Figure 1 A top view of the gas port configuration of the gas purging module;

[0026] Figure 3 for Figure 2 A schematic diagram of the front cross-sectional structure;

[0027] Figure 4 for Figure 1 A schematic diagram of the gas path configuration of the gas purging module;

[0028] Figure 5 , 6 The structure of the conveying assembly in this embodiment is shown;

[0029] Figure 7 A flowchart illustrating a method for preparing a perovskite solar absorber layer.

[0030] Figure reference numerals: 100 - Equipment for preparing perovskite solar absorber layer; 110 - Tray; 111 - Coating substrate; 120 - Deposition chamber; 130 - Gas path module; 140 - Gas port module; 150 - Deposition channel; 160 - Conveying module; 170 - Heating module;

[0031] 141-First isolation gas blowing port; 142-First exhaust port; 143-First process gas blowing port; 144-Second exhaust port; 145-Second isolation gas blowing port; 146-Third exhaust port; 147-Second process gas blowing port; 148-Fourth exhaust port; 149-Third isolation gas blowing port;

[0032] 131 - First isolation gas path; 132 - First extraction gas path; 133 - First process gas path; 134 - Second extraction gas path; 135 - Second isolation gas path; 136 - Third extraction gas path; 137 - Second process gas path; 138 - Fourth extraction gas path; 139 - Third isolation gas path. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to specific embodiments and accompanying drawings. Obviously, the described embodiments are only some optional implementations of this invention and should not be construed as limiting the scope of the invention.

[0034] In the following description, it should be understood that the terms "upper," "lower," "inner," "outer," "left," "right," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product is usually placed during use, or the orientation or positional relationship commonly understood by those skilled in the art. They are used only for the convenience of describing the present invention and are not intended to indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0035] Furthermore, the terms "first," "second," etc., are used only to distinguish descriptions and should not be interpreted as indicating or implying relative importance.

[0036] In the description of this invention, it should also be noted that, unless otherwise explicitly specified and limited, terms such as "set" and "connection" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0037] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0038] Please see Figure 1 , Figure 1 The diagram shown is a schematic diagram of the apparatus 100 for preparing a perovskite solar absorber layer provided in this embodiment.

[0039] The device 100 provided in this embodiment includes a deposition chamber 120, a conveying assembly, a heating module 170, and a gas purging module. The conveying assembly includes a conveying module 160 and a tray 110 (e.g., Figure 5 As shown, Figure 1 (Not shown in the figure), tray 110 is used to carry the coating substrate and is fixed to the conveying module 160. The gas path module 130 and gas port module 140 in the figure are both components of the gas purging module. Gas port module 140 is connected to gas path module 130. Gas port module 140 and heating module 170 are distributed vertically within deposition chamber 120. The conveying assembly is positioned above heating module 170, opposite to gas port module 140. A deposition channel 150 for moving the coating substrate is formed between the conveying assembly and gas port module 140.

[0040] Please refer to the following: Figure 2 , Figure 2 This is a top view of the air inlet module 140 of the device 100.

[0041] The gas port module 140 of the device 100 includes a first isolation gas blowing port 141, a first extraction port 142, a first process gas blowing port 143, a second extraction port 144, a second isolation gas blowing port 145, a third extraction port 146, a second process gas blowing port 147, a fourth extraction port 148, and a third isolation gas blowing port 149. The first process gas blowing port 143 is used to purge the first process gas into the deposition channel 150, the second process gas blowing port 147 is used to purge the second process gas into the deposition channel 150, the first isolation gas blowing ports 141, 145, and 149 are used to purge the isolation gas into the deposition channel 150, and the first extraction port 142, 144, 146, and 148 are used to extract the remaining process gas, isolation gas, and gaseous byproducts from the deposition channel 150 into the installation chamber.

[0042] This embodiment aims to allow the first process gas blowing port 143, the second process gas blowing port 147, the first isolation gas blowing port 141, the second isolation gas blowing port 145, and the third isolation gas blowing port 149 to each form different gas atmosphere fields at different positions in the deposition channel 150 through the above arrangement. The first process gas blowing port 143 forms a first process gas atmosphere field by continuously blowing the first process gas, the second process gas blowing port 147 forms a second process gas atmosphere field by continuously blowing the second process gas, the first isolation gas blowing port 141 forms a first isolation gas atmosphere field by continuously blowing the isolation gas, the second isolation gas blowing port 145 forms a second isolation gas atmosphere field by continuously blowing the isolation gas, and the third isolation gas blowing port 149 forms a third isolation gas atmosphere field by continuously blowing the isolation gas.

[0043] Because the first isolation gas outlet 141 is located to the left of the first process gas outlet 143, meaning the first isolation gas atmosphere field is located to the left of the first process gas atmosphere field, isolation is achieved between other gases in the deposition chamber 120 and the first process gas atmosphere field. Because the third isolation gas outlet 149 is located to the right of the second process gas outlet 147, meaning the third isolation gas atmosphere field is located to the right of the second process gas atmosphere field, isolation is achieved between other gases in the deposition chamber 120 and the second process gas atmosphere field. Because the second isolation gas outlet 145 is located between the first process gas outlet 143 and the second process gas outlet 147, meaning the second isolation gas atmosphere field is located between the first process gas atmosphere field and the second process gas atmosphere field, isolation is achieved between the first process gas atmosphere field and the second process gas atmosphere field.

[0044] The extraction port is located between the isolation gas purging port and the process gas purging port, that is, between the isolation gas atmosphere field and the process gas atmosphere field. This allows excess isolation gas, residual process gas, and excess gaseous byproducts to be extracted from the deposition channel 150, thereby maintaining the stability of each gas atmosphere field and preventing other gases such as environmental particles and water vapor from entering the deposition chamber 120. At the same time, it prevents the isolation gas from entering the first or second process gas atmosphere field and eliminates the possibility of cross-reaction between the first and second process gases, thus avoiding changes in the uniformity and stability of the chemical composition of the substrate and ensuring the deposition quality of the film.

[0045] In practical applications, as the substrate is carried by the tray 110 and driven by the conveying module 160 along the deposition channel 150, it sequentially passes through a first isolation gas atmosphere field, a first process gas atmosphere field, a second isolation gas atmosphere field, a second process gas atmosphere field, and a third isolation gas atmosphere field. During the passage through the first process gas atmosphere field, the substrate surface adsorbs the first process gas. During the passage through the second process gas atmosphere field, the substrate surface further adsorbs the second process gas, thus completing one deposition reaction and forming a film.

[0046] Understandably, as the substrate passes through the deposition channel 150, it sequentially passes through the first process gas atmosphere field and the second process gas atmosphere field, completing one deposition reaction and forming a film layer. Depending on the required film thickness, multiple depositions can be achieved by controlling the substrate to reciprocate multiple times within the deposition channel 150, thus obtaining a film layer that meets the thickness requirements.

[0047] Please refer to the following: Figure 3 , Figure 3 This is a cross-sectional structural diagram of the air inlet module 140 of the device 100.

[0048] The figure shows that in this embodiment, all the gas inlets are centrally located on a single plate, forming an integrated structure. This structure facilitates the installation of the gas inlets in the deposition chamber 120. The inlets for both the isolation and process gases employ a slit design, allowing the blown ribbon-like airflow to act like an air curtain (gas forming a curtain) separating the two sides. The extraction port also consists of a slit. Generally, the width of the substrate should be smaller than the length of the isolation and process gas inlets so that the substrate can pass through the ribbon-like airflow, while the length of the extraction port should be greater than or equal to the length of the inlet (within...). Figure 2 , 3 In the middle, the three types of air inlets are of equal length.

[0049] Please refer to the following: Figure 4 , Figure 4 This is a structural schematic diagram of the air circuit module 130 of device 100.

[0050] The gas path module 130 of the equipment 100 includes a first isolation gas path 131, a first extraction gas path 132, a first process gas path 133, a second extraction gas path 134, a second isolation gas path 135, a third extraction gas path 136, a second process gas path 137, a fourth extraction gas path 138, and a third isolation gas path 139. The first process gas path 133 is used to supply the first process gas to the first process gas blowing port 143. The second process gas path 137 is used to supply the second process gas to the second process gas blowing port 147. The first isolation gas path 131 is used to supply isolation gas to the first isolation gas blowing port 141. The second isolation gas path 135 is used to supply isolation gas to the second isolation gas blowing port 145. The third isolation gas path 139 is used to supply isolation gas to the third isolation gas blowing port 149. The first extraction gas path 132 is connected to the first extraction port 142. The second extraction gas path is connected to the second extraction port 144. The third extraction gas path 136 is connected to the third extraction port 146. The fourth extraction gas path 138 is connected to the fourth extraction port 148 and is used to extract the remaining process gas and isolation gas as well as gaseous by-products from the deposition channel 150 from the installation chamber.

[0051] In this embodiment, the first isolation gas path 131, the second isolation gas path 135, and the third isolation gas path 139 are interconnected, and isolation gas can be delivered to the first isolation gas path 131, the second isolation gas path 135, and the third isolation gas path 139 through one isolation gas path; the first extraction gas path 132, the second extraction gas path 134, the third extraction gas path 136, and the fourth extraction gas path 138 are interconnected, and the remaining process gas, isolation gas, and gaseous by-products of the first extraction gas path 132, the second extraction gas path 134, the third extraction gas path 136, and the fourth extraction gas path 138 can be extracted from the deposition channel 150 through one extraction gas path.

[0052] The first process gas can be a mixture of organic sources such as FAI, FACl, FABr, MAI, MACl, MABr, or PEAI, which are heated and sublimated in a closed container and then carried to the purge port by a high-purity carrier gas such as argon or nitrogen through a closed pipeline. The second process gas can be a mixture of inorganic sources such as PbI2, PbBr2, PbCl2, CsI, CsCl, or CsBr, which are heated and sublimated in a closed container and then carried to the purge port by a high-purity carrier gas such as argon or nitrogen through a closed pipeline.

[0053] This method, which uses single-component organic and inorganic sources for separate processing and deposition to form a perovskite solar absorption layer, makes the entire evaporation and deposition process easier to control and more stable. After the evaporated particles are carried out by the carrier gas, the number and energy of particles received on the substrate surface are more uniform, and the deposition rate and stoichiometric composition of the film are more stable.

[0054] Figure 5 , 6 The structure of the conveying assembly in this embodiment is shown. As previously stated, the conveying assembly consists of a conveying module 160 and a tray 110. The conveying module 160 can be a lead screw slide, drive roller, drive belt, etc. The tray 110 is mainly used to carry the coating substrate 111. The conveying module 160 provides power so that the substrate 111 can move quickly in front of the air inlet module 140. The movement here can refer to back-and-forth movement or unidirectional linear movement.

[0055] from Figure 5 , 6 As can be seen, in this embodiment, the width of the substrate 111 is smaller than the effective jet width of the air port module 140, while the width of the tray 110 is larger than the width of the air extraction area of ​​the air port module 140. At the same time, the blank length of the tray 110 along the conveying direction is larger than the length of the air port module 140. The purpose is to form a certain degree of sealing to prevent the airflow from directly passing through the conveying assembly when the coating substrate 111 is located in the air port area (defined by 141 and 149), so that the two process gas purging areas can form independent and stable areas respectively, while effectively recovering waste gas. Figure 5 The diagram also illustrates a preferred air extraction port design, in which the two ends of the air ports 142, 144, 146, and 148 of each air extraction module are connected together, and the air ports 143, 145, and 147 located between them are enclosed within this area. This structure, compared to... Figure 2 The medium structure is more conducive to stabilizing the gas field environment in the internal sedimentation area.

[0056] In this embodiment, the perovskite solar absorption layer is formed by adsorbing the precursor gaseous state onto the substrate. The deposition process does not involve a solution, so there is no need to worry about streaks or bubbles. Furthermore, by purging argon and nitrogen gases used for isolation and by evacuating the gas, the cross-reaction between the first and second process gases and the phenomenon of gas flow agglomeration are prevented. The influence of surrounding particulate matter and water vapor is also isolated, avoiding these factors from changing the uniformity and stability of the substrate's chemical composition. This not only allows the deposition process in this embodiment to be carried out under normal pressure, but also achieves the preparation of a high-quality and highly uniform light-absorbing layer.

[0057] Furthermore, the width of the deposition channel in this embodiment can be made very large without affecting the high quality and uniformity of the light-absorbing layer. The substrate can also be moved back and forth within the deposition channel by the transport assembly to obtain the desired thickness, thus effectively controlling the cost of the equipment. This embodiment's equipment is well-suited for preparing perovskite solar absorption layers on flexible substrates.

[0058] The method for preparing a perovskite solar absorber layer using the equipment in this embodiment is as follows: Figure 7 As shown, it includes the following steps:

[0059] Step S101: Control the heating module 170 to heat up the tray 110, deposition channel 150 and coating substrate (carried by the tray 110) (temperature controlled between 25-300℃);

[0060] Step S102: Heat the organic and inorganic sources to sublimate them and mix them with the carrier gas;

[0061] Step S103: Control the first isolation gas path 131, the second isolation gas path 135, the third isolation gas path 139, the first process gas path 133, the second process gas path 137, the first extraction gas path 132, the second extraction gas path 134, the third extraction gas path 136, the fourth extraction gas path 138, and the first process gas blowing port 143, the second process gas blowing port 147, the first isolation gas blowing port 141, the second isolation gas blowing port 145, the third isolation gas blowing port 149, the first extraction port 142, the second extraction port 144, the third extraction port 146, and the fourth extraction port 148 to remain open;

[0062] Step S104: Control the conveying module 160 to open, so that the coating substrate reciprocates in the deposition channel 150, and sequentially adsorbs the first process gas blown out by the first process gas blowing port 143 and the second process gas blown out by the second process gas blowing port 147 multiple times to obtain a film layer of the required thickness.

[0063] Step S105: After the deposited film is kept at a temperature (between 50 and 300°C) for a period of time, it is cooled down at a controlled rate (1 to 60°C / minute). The purpose is to improve the crystallinity of the film, reduce the defect density, improve the uniformity and coverage of the film, and improve the photoelectric conversion efficiency.

[0064] The above description is only a preferred embodiment of the present invention. For those skilled in the art, the present invention can have various modifications, such as setting more process gas purging ports or more process gas purging modules. The organic and inorganic sources used in each process gas purging module can be the same or different. In short, any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. An apparatus for preparing a perovskite solar absorber layer, characterized in that, The system includes a deposition chamber, a delivery assembly, a heating module, and a gas purging module. The gas purging module and the delivery assembly are distributed opposite to each other in the deposition chamber, forming a deposition channel for moving the substrate. The heating module is used to heat the substrate. The gas purging module includes at least one first process gas purging module and at least one second process gas purging module, as well as an isolation gas purging module and an extraction module. The gas purging module has its gas purging ports located between and outside the gas purging ports of each process gas purging module, while the extraction module has its gas purging ports spaced apart between each pair of gas purging ports. The first process gas is a mixed gas carried out by a carrier gas after the single-component organic source is heated and sublimated. The second process gas is a mixed gas that is heated and sublimated from a single-component inorganic source and carried out by a carrier gas; The conveying assembly is sealed, preventing airflow from passing directly through when the coated substrate is located in the air vent area. During the coating process, both the isolation gas purging module and the process gas purging module blow out ribbon-shaped airflows. The conveying component supports the coating substrate and allows it to pass through the ribbon-shaped airflow range. The ribbon-shaped airflows blown out by the first and second process gas purging modules sweep across the surface of the coating substrate, depositing the perovskite solar absorption layer. Excess gas is extracted through the air outlet of the extraction module, and the length of the extraction outlet is greater than or equal to the length of the air outlets of the isolation gas purging module and the process gas purging module.

2. The device according to claim 1, characterized in that, The first process gas used in the first process gas purging module may be the same or different organic sources, and the organic source may be FAI, FACl, FABr, MAI, MACl, MABr or PEAI.

3. The device according to claim 1, characterized in that, The second process gas used in the second process gas purging module may be the same or different inorganic sources, and the inorganic source may be PbI2, PbBr2, PbCl2, CsI, CsCl or CsBr.

4. The device according to claim 1, characterized in that, The gas ports of the first process gas purging module, the second process gas purging module, the isolation gas purging module, and the extraction module are set together to form an integrated structure.

5. The device according to claim 4, characterized in that, The gas paths of each gas port of the isolation gas purging module are interconnected, and the gas paths of each gas port of the extraction module are interconnected.

6. The device according to claim 1, characterized in that, The gas inlets of both the isolation gas purging module and the process gas purging module adopt a slit design.

7. The device according to claim 6, characterized in that, The air inlet of the air extraction module is also a slit, and the two ends of the air inlets of each air extraction module are connected together, with the air inlet frame located between them within its range.

8. A method for preparing a perovskite solar absorber layer using the apparatus described in any one of claims 1-7, characterized in that it comprises the following steps: The heating module is turned on to preheat the substrate, and the gas purging module is turned on. Then, the conveying component is controlled to move the substrate back and forth in the deposition channel, adsorbing the first process gas and the second process gas multiple times, thereby obtaining a perovskite solar absorption layer of the required thickness. Finally, it is annealed.

9. The method according to claim 8, characterized in that, The preheating temperature should be controlled between 25-300℃.

10. The method according to claim 8, characterized in that, During annealing, the annealing temperature should be controlled between 25-300℃.

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