Integrated structure of power amplifier and circularly polarized antenna

Abstract

The invention discloses an integrated structure of a power amplifier and a circularly polarized antenna, which comprises the power amplifier and the antenna which are integrated together, the antenna is a circularly polarized antenna, and the input impedance of the antenna is directly matched to the output impedance of the power amplifier in a CPW feed mode; the power amplifier has the advantages that the overall occupied volume is reduced, the integration level is high, low-loss transmission can be achieved, the performance of the power amplifier can be brought into full play, the radiation effect of the antenna can be improved, and the requirements of a wireless communication system for high-speed and high-quality transmission and efficient and stable operation are met in high-frequency, broadband and high-power application scenes.

Description

Technical Field

[0001] The invention relates to an integrated structure, in particular to an integrated structure of a power amplifier and a circular polarization antenna. Background Art

[0002] With the rapid development of modern wireless communication technology, especially in 5G and future 6G communication systems, the requirements for high speed, large capacity, low latency and high stability are getting higher and higher. These requirements have given rise to an urgent need for broadband, efficient and highly integrated wireless communication systems. Power amplifiers (PA) and antennas are crucial components of wireless communication systems. The performance of the two directly determines the transmission quality and coverage of the entire wireless communication system.

[0003] At present, although there is an integrated structure of a power amplifier and an antenna, the power amplifier and the antenna are designed independently during design, and a matching circuit needs to be added between the two to perform impedance matching between the power amplifier and the antenna, so as to realize the connection between the power amplifier and the antenna. This approach makes the overall occupied volume of the integrated structure of the existing power amplifier and the antenna still large, and the integration is not high. Moreover, the matching circuit is generally designed based on microstrip lines (Micros trip Line) or coaxial feed (Coaxial Feed), which will produce large losses during the transmission process. At the same time, the feeding structure inside the existing antenna itself also has large losses. Therefore, the line loss caused by the additional matching circuit and the feeding structure inside the antenna, these factors together cause the overall efficiency to be reduced in high-frequency, broadband and high-power application scenarios. Especially in the case of high power output, the efficiency and linearity of the power amplifier may be suppressed, and the performance of the power amplifier cannot be fully exerted, thereby affecting the radiation effect of the antenna, and finally affecting the signal quality and the stability of the wireless communication system. With the increase in bandwidth requirements of wireless communication systems and the increase in signal processing frequencies, the shortcomings of the integrated structure of the existing power amplifier and the antenna in terms of overall integration and efficiency of the wireless communication system have gradually become prominent. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide an integrated structure of a power amplifier and a circularly polarized antenna with a reduced overall occupied volume and a high degree of integration, and which can achieve low-loss transmission in high-frequency, broadband and high-power application scenarios, give full play to the performance of the power amplifier, enhance the antenna radiation effect, and meet the requirements of the wireless communication system for high-speed, high-quality transmission and efficient and stable operation.

[0005] The technical solution adopted by the present invention to solve the above technical problems is: an integrated structure of a power amplifier and a circularly polarized antenna, including a power amplifier and an antenna integrated together, the antenna is a circularly polarized antenna, and the antenna directly matches its input impedance to the output impedance of the power amplifier through a CPW feeding method.

[0006] Compared with the prior art, the advantage of the present invention is that the antenna structure is realized by adopting a circularly polarized antenna, and the antenna input impedance is directly matched to the output impedance of the power amplifier through the CPW feeding method. Therefore, in the integrated structure of the power amplifier and the circularly polarized antenna, the power amplifier and the antenna can be directly integrated, and there is no need to add an additional impedance matching circuit to perform impedance matching between the power amplifier and the circularly polarized antenna. The integration level is high, which not only effectively reduces the overall size of the integrated structure of the power amplifier and the circularly polarized antenna, but also reduces the signal transmission loss. The antenna adopts the CPW feeding method, which also effectively reduces the signal loss. Therefore, the overall occupied volume of the present invention is reduced, the integration level is high, and in high-frequency, broadband and high-power application scenarios, low-loss transmission can be achieved, the performance of the power amplifier is fully utilized, the antenna radiation effect is improved, and the requirements of the wireless communication system for high-speed, high-quality transmission and efficient and stable operation are met.

[0007] Furthermore, the power amplifier includes an input matching circuit, a first bias circuit, a second bias circuit, a transistor and a DC isolation output circuit, the input matching network has an input end, an output end and a bias end, the first bias circuit and the DC isolation output circuit both have an input end and an output end, the second bias circuit has an input end, a first output end and a second output end, the input end of the input matching circuit is the input end of the power amplifier, the output end of the input matching circuit is connected to the gate of the transistor, the bias end of the input matching network is connected to the output end of the first bias circuit, the drain of the transistor is connected to the first output end of the second bias circuit, the source of the transistor is grounded, the input end of the DC isolation output circuit and the second The second output end of the bias circuit is connected, the output end of the DC isolation output circuit is the output end of the power amplifier, the input end of the power amplifier is used to access an external signal, and the output end of the power amplifier is connected to the antenna; the input end of the first bias circuit is used to connect to an external power supply, access a first power supply voltage, and the first bias circuit is used to convert the accessed first power supply voltage into a first bias voltage loaded on the gate of the transistor; the input end of the second bias circuit is used to connect to an external power supply, access a second power supply voltage, and the second bias circuit is used to convert the accessed second power supply voltage into a second bias voltage loaded on the drain of the transistor, and the first bias voltage and the second bias voltage are used to make the transistor work in a Class AB state.

[0008] Furthermore, the input matching circuit includes eight microstrip lines, two capacitors and one resistor; the eight microstrip lines are respectively referred to as the first microstrip line, the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the seventh microstrip line and the eighth microstrip line, wherein the first microstrip line, the second microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line and the eighth microstrip line are all rectangular microstrip lines, the third microstrip line and the seventh microstrip line are all T-junction microstrip lines with three connecting ends, the two capacitors are respectively referred to as the first capacitor and the second capacitor, the resistor is referred to as the first resistor, one end of the first microstrip line is the input end of the input matching circuit, the other end of the first microstrip line is connected to one end of the first capacitor, and the other end of the first capacitor is connected to the second microstrip line one end of the second microstrip line is connected to the first connection end of the third microstrip line, one end of the fourth microstrip line is connected to the second connection end of the third microstrip line, the third connection end of the third microstrip line is connected to one end of the fifth microstrip line, the other end of the fifth microstrip line is respectively connected to one end of the first resistor and one end of the second capacitor, the other end of the first resistor and the other end of the second capacitor are connected to one end of the sixth microstrip line, the other end of the sixth microstrip line is connected to the first connection end of the seventh microstrip line, the second connection end of the seventh microstrip line is the bias end of the input matching circuit, the third connection end of the seventh microstrip line is connected to one end of the eighth microstrip line, and the other end of the eighth microstrip line is the output end of the input matching circuit.

[0009] Further, the first bias circuit includes four microstrip lines, four capacitors and one resistor; the four microstrip lines are respectively referred to as the ninth microstrip line, the tenth microstrip line, the eleventh microstrip line and the twelfth microstrip line, the eleventh microstrip line is an arc microstrip line, the ninth microstrip line, the tenth microstrip line and the twelfth microstrip line are all rectangular microstrip lines, the four capacitors are respectively referred to as the third capacitor, the fourth capacitor, the fifth capacitor and the sixth capacitor, the resistor is referred to as the second resistor, one end of the ninth microstrip line is the input end of the first bias circuit, the other end of the ninth microstrip line is connected to one end of the tenth microstrip line, the other end of the tenth microstrip line is connected to the eleventh microstrip line The eleventh microstrip line is connected to one end of the twelfth microstrip line, the other end of the twelfth microstrip line is connected to one end of the second resistor, the other end of the second resistor is the output end of the first bias circuit, one end of the third capacitor, one end of the fourth capacitor, one end of the fifth capacitor and one end of the sixth capacitor are all connected to the tenth microstrip line, the other end of the third capacitor, the other end of the fourth capacitor, the other end of the fifth capacitor and the other end of the sixth capacitor are all grounded, and the total length of the tenth microstrip line, the eleventh microstrip line and the twelfth microstrip line is one quarter of a wavelength.

[0010] Further, the second bias circuit includes six microstrip lines and four capacitors; the six microstrip lines are respectively referred to as the thirteenth microstrip line, the fourteenth microstrip line, the fifteenth microstrip line, the sixteenth microstrip line, the seventeenth microstrip and the eighteenth microstrip line, the fifteenth microstrip line is an arc microstrip line, the seventeenth microstrip line is a T-junction microstrip line, having three connection ends, the thirteenth microstrip line, the fourteenth microstrip line, the sixteenth microstrip line and the eighteenth microstrip line are all rectangular microstrip lines, the four capacitors are respectively referred to as the seventh capacitor, the eighth capacitor, the ninth capacitor and the tenth capacitor, one end of the thirteenth microstrip line is the input end of the second bias circuit, the other end of the thirteenth microstrip line is connected to one end of the fourteenth microstrip line, the other end of the fourteenth microstrip line is connected to one end of the fifteenth microstrip line, the other end of the fifteenth microstrip line is connected to one end of the One end is connected to one end of the sixteenth microstrip line, the other end of the sixteenth microstrip line is connected to the first connection end of the seventeenth microstrip line, the second connection end of the seventeenth microstrip line is connected to one end of the eighteenth microstrip line, the other end of the eighteenth microstrip line is the first output end of the second bias circuit, the third connection end of the seventeenth microstrip line is the second output end of the second bias circuit, one end of the seventh capacitor, one end of the eighth capacitor, one end of the ninth capacitor and one end of the tenth capacitor are all connected to the fourteenth microstrip line, the other end of the seventh capacitor, the other end of the eighth capacitor, the other end of the ninth capacitor and the other end of the tenth capacitor are all grounded, and the total length of the fourteenth microstrip line, the fifteenth microstrip line and the sixteenth microstrip line is one quarter of a wavelength.

[0011] Furthermore, the DC isolation output circuit includes a capacitor, which is called the eleventh capacitor. One end of the eleventh capacitor is the input end of the DC isolation output circuit, and the other end of the eleventh capacitor is the output end of the DC isolation output circuit.

[0012] Furthermore, the antenna includes a dielectric substrate, a radiation patch and a metal ground. The dielectric substrate is in the shape of a rectangular parallelepiped. The length of the dielectric substrate is taken as the front-to-back direction, the width is taken as the left-to-right direction, and the height is taken as the up-down direction. The length of the dielectric substrate is smaller than its width. The plane that makes the dielectric substrate symmetrical in the left and right is called the first symmetry plane, and the plane that makes the dielectric substrate symmetrical in the front and back is called the second symmetry plane. The radiation patch includes four rectangular metal patches attached to the upper end surface of the dielectric substrate. The four rectangular metal patches are respectively called the first rectangular patch, the second rectangular patch, the third rectangular patch and the fourth rectangular patch; the length of the first rectangular patch is taken as the right-to-left direction, and the width of the dielectric substrate is taken as the left-to-right direction, and the height of the dielectric substrate is taken as the up-down direction. In the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end face of the first rectangular patch is located on the left side of the first symmetry plane, and there is a distance between the two. The left end face of the first rectangular patch is located on the right side of the plane where the left end face of the dielectric substrate is located, and there is a distance between the two. The front end face of the first rectangular patch is located on the front side of the second symmetry plane, and there is a distance between the two. The front end face of the first rectangular patch is located on the rear side of the plane where the front end face of the dielectric substrate is located, and there is a distance between the two. The rear end face of the first rectangular patch is located on the rear side of the second symmetry plane, and there is a distance between the two. The end face is located in front of the plane where the rear end face of the dielectric substrate is located, and there is a distance between the two; a rectangular opening is opened on the first rectangular patch, and the rectangular opening is called a first rectangular groove. The upper end face of the dielectric substrate is exposed at the first rectangular groove. The length of the first rectangular groove is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The rear end face of the first rectangular groove is located in front of the rear end face of the first rectangular patch, and there is a distance between the two. The right end face of the first rectangular groove is located on the left side of the right end face of the first rectangular patch, and there is a distance between the two. The front end face of the first rectangular groove is located on the rear side of the second symmetry plane, and the two There is a distance between the two, the left end face of the first rectangular groove is located on the right side of the left end face of the first rectangular patch, and there is a certain distance between the two; the length of the second rectangular patch is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the second rectangular patch is located on the rear side of the first rectangular patch, the front end face of the second rectangular patch is connected to the rear end face of the first rectangular patch and is in a fitted state, the length of the second rectangular patch is less than the length of the first rectangular patch, the right end face of the second rectangular patch is located on the same plane as the right end face of the first rectangular patch, and the rear end face of the second rectangular patch is located on the same plane as the rear end face of the dielectric substrate;The third rectangular patch has a length along the front-to-back direction, a width along the left-to-right direction, and a thickness along the up-to-down direction. The third rectangular patch is located on the right side of the second rectangular patch. The left end face of the third rectangular patch is connected to the right end face of the second rectangular patch and is in a fitted state. The right end face of the third rectangular patch is located on the right side of the first symmetry plane, and there is a distance between the two. The front end face of the third rectangular patch is located on the rear side of the front end face of the second rectangular patch, and there is a distance between the two. The rear end face of the third rectangular patch is located on the front side of the rear end face of the second rectangular patch, and there is a distance between the two. The fourth rectangular patch has a length along the front-to-back direction, a width along the left-to-right direction, and a thickness along the up-to-down direction. , the thickness is along the up-down direction, the fourth rectangular patch is located at the front side of the first rectangular patch, the rear end face of the fourth rectangular patch is connected to the front end face of the first rectangular patch, and is in a fitted state, the right end face of the fourth rectangular patch is located on the same plane as the right end face of the first rectangular patch, the left end face of the fourth rectangular patch is located on the same plane as the left end face of the second rectangular patch, the front end face of the fourth rectangular patch is located on the rear side of the plane where the front end face of the dielectric substrate is located, and there is a distance between the two; the metal ground includes thirteen rectangular metal grounds and two right-angled trapezoidal metal grounds, and the thirteen rectangular metal grounds and the two right-angled trapezoidal metal grounds are all attached to the upper end face of the dielectric substrate; The thirteen rectangular metal grounds are respectively called the first rectangular metal ground, the second rectangular metal ground, the third rectangular metal ground, the fourth rectangular metal ground, the fifth rectangular metal ground, the sixth rectangular metal ground, the seventh rectangular metal ground, the eighth rectangular metal ground, the ninth rectangular metal ground, the tenth rectangular metal ground, the eleventh rectangular metal ground, the twelfth rectangular metal ground and the thirteenth rectangular metal ground, and the two right-angled trapezoidal metal grounds are respectively called the first right-angled trapezoidal metal ground and the second right-angled trapezoidal metal ground, the length of the first rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the left end surface of the first rectangular metal ground and the left end surface of the dielectric substrate are located in the same plane, and the front end surface of the first rectangular metal ground and the front end surface of the dielectric substrate are located at the same plane. The first rectangular metal ground is located on the same plane, the right end face of the first rectangular metal ground is located on the left side of the left end face of the first rectangular patch, and there is a distance between the two, the second rectangular metal ground is located on the rear side of the first rectangular metal ground, the length of the second rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction; the front end face of the second rectangular metal ground is connected to the rear end face of the first rectangular metal ground and is in a bonded state, the left end face of the second rectangular metal ground and the left end face of the dielectric substrate are located on the same plane, the rear end face of the second rectangular metal ground and the rear end face of the dielectric substrate are located on the same plane, and the width of the second rectangular metal ground is less than the width of the first rectangular metal ground;The third rectangular metal ground is located on the right side of the second rectangular metal ground, the length of the third rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The left end face of the third rectangular metal ground is connected to the right end face of the second rectangular metal ground and is in a fitted state. The rear end face of the third rectangular metal ground and the rear end face of the dielectric substrate are located in the same plane. The sum of the width of the third rectangular metal ground and the width of the second rectangular metal ground is greater than the width of the first rectangular metal ground, and the length of the third rectangular metal ground is less than the length of the second rectangular metal ground. The fourth rectangular metal ground The metal ground is located on the right side of the third rectangular metal ground, the length of the fourth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The left end face of the fourth rectangular metal ground is connected to the right end face of the third rectangular metal ground and is in a fitted state. The rear end face of the fourth rectangular metal ground and the rear end face of the dielectric substrate are located in the same plane. The length of the fourth rectangular metal ground is greater than the length of the third rectangular metal ground and less than the length of the second rectangular metal ground. The length of the fifth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end surface of the fifth rectangular metal ground is located in the same plane as the right end surface of the dielectric substrate, the rear end surface of the fifth rectangular metal ground is located in the same plane as the rear end surface of the dielectric substrate, the length of the fifth rectangular metal ground is equal to the length of the fourth rectangular metal ground, the left end surface of the fifth rectangular metal ground is located on the right side of the first symmetry plane, and there is a distance between the two, the left end surface of the fifth rectangular metal ground is located on the left side of the right end surface of the third rectangular patch, and there is a distance between the two, and the front end surface of the fifth rectangular metal ground is located on the rear side of the rear end surface of the third rectangular patch, and there is a distance between the two; The sixth rectangular metal ground is located at the front side of the fifth rectangular metal ground, the length of the sixth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end face of the sixth rectangular metal ground and the right end face of the dielectric substrate are located in the same plane, the front end face of the sixth rectangular metal ground and the front end face of the dielectric substrate are located in the same plane, the left end face of the sixth rectangular metal ground is located on the right side of the plane where the right end face of the third rectangular patch is located, and there is a distance between the two, and the rear end face of the sixth rectangular metal ground is connected to the front end face of the fifth rectangular metal ground, and they are in a bonded state;The seventh rectangular metal ground is located on the left side of the sixth rectangular metal ground, the length of the seventh rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The front end face of the seventh rectangular metal ground and the front end face of the dielectric substrate are located in the same plane, the left end face of the seventh rectangular metal ground is located on the right side of the first symmetry plane, and there is a distance between the two, the right end face of the seventh rectangular metal ground is connected to the left end face of the sixth rectangular metal ground, and they are in a fitted state, the rear end face of the seventh rectangular metal ground is located on the front side of the plane where the front end face of the fourth rectangular patch is located, and there is a distance between the two, the width of the sixth rectangular metal ground is the same as that of the seventh rectangular metal ground. The sum of the widths of the eight rectangular metal grounds is greater than the width of the fifth rectangular metal ground, the eighth rectangular metal ground is located on the left side of the seventh rectangular metal ground, the length of the eighth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the front end surface of the eighth rectangular metal ground and the front end surface of the dielectric substrate are located in the same plane, the length of the eighth rectangular metal ground is less than the length of the seventh rectangular metal ground, the right end surface of the eighth rectangular metal ground is connected to the left end surface of the seventh rectangular metal ground, and they are in a fitted state, the left end surface of the eighth rectangular metal ground is located on the left side of the plane where the right end surface of the fourth rectangular patch is located, and there is a distance between the two, and the left end surface of the eighth rectangular metal ground The ninth rectangular metal ground is located on the right side of the plane where the right end face of the first rectangular groove is located, and there is a distance between the two; the ninth rectangular metal ground is located on the left side of the eighth rectangular metal ground, the length of the ninth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The front end face of the ninth rectangular metal ground and the front end face of the dielectric substrate are located in the same plane, the rear end face of the ninth rectangular metal ground and the rear end face of the seventh rectangular metal ground are located in the same plane, the left end face of the ninth rectangular metal ground is connected to the right end face of the first rectangular metal ground, and they are in a fitted state, and the right end face of the ninth rectangular metal ground is connected to the left end face of the eighth rectangular metal ground, and they are in a fitted state; The tenth rectangular metal ground is located at the rear side of the ninth rectangular metal ground, the length of the tenth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end face of the tenth rectangular metal ground is located at the right side of the plane where the right end face of the fourth rectangular metal ground is located, and there is a distance between the two. The left end face of the tenth rectangular metal ground is located at the right side of the plane where the left end face of the first rectangular patch is located, and there is a distance between the two. The front end face of the tenth rectangular metal ground is connected to the rear end face of the ninth rectangular metal ground and is in a fitted state. The rear end face of the tenth rectangular metal ground is located at the front side of the plane where the front end face of the fourth rectangular patch is located, and there is a distance between the two.The eleventh rectangular metal ground is located on the rear side of the tenth rectangular metal ground, the length of the eleventh rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The left end face of the eleventh rectangular metal ground is connected to the right end face of the first rectangular metal ground and is in a fitted state. The right end face of the eleventh rectangular metal ground and the right end face of the tenth rectangular metal ground are located on the same plane. The front end face of the eleventh rectangular metal ground is connected to the rear end face of the tenth rectangular metal ground and is in a fitted state. The rear end face of the eleventh rectangular metal ground is located on the rear side of the plane where the front end face of the fourth rectangular patch is located, and there is a distance between the two. The rear end face of the eleventh rectangular metal ground is located. The front side of the plane where the rear end face of the fourth rectangular patch is located, and there is a distance between the two; the twelfth rectangular metal ground is located on the left side of the sixth rectangular metal ground, the length of the twelfth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the front end face of the twelfth rectangular metal ground is located on the rear side of the plane where the front end face of the first rectangular groove is located, and there is a distance between the two, the front end face of the twelfth rectangular metal ground is located on the front side of the plane where the rear end face of the first rectangular groove is located, and there is a distance between the two, the rear end face of the twelfth rectangular metal ground is located on the rear side of the plane where the rear end face of the first rectangular groove is located, and there is a distance between the two, the twelfth rectangular The right end face of the metal ground is connected to the left end face of the sixth rectangular metal ground, and are in a fitted state; the thirteenth rectangular metal ground is located on the left side of the twelfth rectangular metal ground, the length of the thirteenth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the left end face of the thirteenth rectangular metal ground is located on the right side of the right end face of the third rectangular patch, and there is a distance between the two, the front end face of the thirteenth rectangular metal ground and the front end face of the twelfth rectangular metal ground are located in the same plane, the rear end face of the thirteenth rectangular metal ground is connected to the front end face of the fifth rectangular metal ground, and the two are in a fitted state, the right end face of the thirteenth rectangular metal ground and the twelfth rectangular metal ground The left end faces of the first right-angled trapezoidal metal ground are connected, and the two are in a fitted state; the first right-angled trapezoidal metal ground is located on the right side of the fourth rectangular metal ground, the upper base and the lower base of the first right-angled trapezoidal metal ground both extend in the front-to-back direction, and its lower base is located on the left side of its upper base, and its oblique waist is located on the front side of its right-angled waist, the lower base of the first right-angled trapezoidal metal ground is connected to the right end face of the fourth rectangular metal ground, and are in a fitted state, the right-angled side of the first right-angled trapezoidal metal ground and the rear end face of the dielectric substrate are located in the same plane, the upper base of the first right-angled trapezoidal metal ground is located on the left side of the left end face of the second rectangular patch, and there is a distance between the two, and the length of the lower base of the first right-angled trapezoidal metal ground is equal to the length of the fourth rectangular metal ground;The second right-angled trapezoidal metal ground is located on the left side of the fifth rectangular metal ground and on the right side of the second rectangular patch. The plane that makes the second rectangular patch bilaterally symmetrical is called the third symmetry plane. The first right-angled trapezoidal metal ground and the second right-angled trapezoidal metal ground are bilaterally symmetrical about the third symmetry plane. ; BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a structural schematic diagram of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention;

[0014] Figure 2 A structural diagram of a power amplifier having an integrated structure of a power amplifier and a circularly polarized antenna according to the present invention;

[0015] FIG3( a) is a top view of an antenna having an integrated structure of a power amplifier and a circularly polarized antenna according to the present invention;

[0016] FIG3( b) is a side view of an antenna having an integrated structure of a power amplifier and a circularly polarized antenna according to the present invention;

[0017] FIG4( a) is a normalized radiation pattern of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention in the horizontal plane;

[0018] FIG4( b ) is a normalized radiation pattern of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention in the vertical plane;

[0019] Figure 5 The EIRP and active gain comparison diagram of the integrated structure of the power amplifier and circular polarization antenna of the present invention and the traditional cascade when the input power is 28dBm;

[0020] Figure 6 A comparison diagram of 2.5 GHz signal PAE and output power between the integrated structure of the power amplifier and circularly polarized antenna of the present invention and the traditional cascade structure;

[0021] Figure 7 It is a comparison diagram of PAE and output power of the integrated structure of the power amplifier and circular polarization antenna of the present invention and the traditional cascade when the input power is 28dBm;

[0022] Figure 8 It is a simulated AR diagram of the integrated structure of the power amplifier and circular polarization antenna of the present invention. DETAILED DESCRIPTION

[0023] The present invention is further described in detail below with reference to the accompanying drawings.

[0024] Embodiment 1: Figure 1As shown, an integrated structure of a power amplifier and a circularly polarized antenna includes a power amplifier 1 and an antenna 2 integrated together. The antenna 2 is a circularly polarized antenna 2, and the input impedance of the antenna 2 is directly matched to the output impedance of the power amplifier 1 through a CPW feeding method.

[0025] In this embodiment, the antenna structure is realized by adopting a circularly polarized antenna, and the input impedance of antenna 2 is directly matched to the output impedance of power amplifier 1 through CPW feeding. Therefore, in the integrated structure of the power amplifier and the circularly polarized antenna, the power amplifier 1 and the antenna 2 can be directly integrated, and there is no need to add an additional impedance matching circuit to perform impedance matching between the power amplifier and the circularly polarized antenna. The integration level is high, which not only effectively reduces the overall size of the integrated structure of the power amplifier and the circularly polarized antenna, but also reduces the signal transmission loss. In addition, antenna 2 adopts CPW feeding, which also effectively reduces the signal loss. Therefore, the overall occupied volume of the present invention is reduced and the integration level is high. In high-frequency, broadband and high-power application scenarios, low-loss transmission can be achieved, the performance of the power amplifier can be fully utilized, the antenna radiation effect can be improved, and the requirements of the wireless communication system for high-speed, high-quality transmission and efficient and stable operation can be met.

[0026] Embodiment 2: This embodiment is basically the same as Embodiment 1, except that: in this embodiment, Figure 2 As shown, the power amplifier 1 includes an input matching circuit 3, a first bias circuit 4, a second bias circuit 5, a transistor P1 and a DC isolation output circuit 6; the input matching network has an input end, an output end and a bias end; the first bias circuit 4 and the DC isolation output circuit 6 both have an input end and an output end, the second bias circuit 5 has an input end, a first output end and a second output end, the input end of the input matching circuit 3 is the input end of the power amplifier 1, the output end of the input matching circuit 3 is connected to the gate of the transistor P1, the bias end of the input matching network is connected to the output end of the first bias circuit 4, the drain of the transistor P1 is connected to the first output end of the second bias circuit 5, the source of the transistor P1 is grounded, the input end of the DC isolation output circuit 6 and the second bias circuit 5 are connected to each other. The first bias circuit 4 is connected to the second output end of the bias circuit 5, the output end of the DC isolation output circuit 6 is the output end of the power amplifier 1, the input end of the power amplifier 1 is used to access an external signal, and the output end of the power amplifier 1 is connected to the antenna 2; the input end of the first bias circuit 4 is used to be connected to an external power supply, access a first power supply voltage, and the first bias circuit 4 is used to convert the accessed first power supply voltage into a first bias voltage loaded on the gate of the transistor P1; the input end of the second bias circuit 5 is used to be connected to an external power supply, access a second power supply voltage, and the second bias circuit 5 is used to convert the accessed second power supply voltage into a second bias voltage loaded on the drain of the transistor P1, and the first bias voltage and the second bias voltage are used to make the transistor P1 work in a class AB state.

[0027] In this embodiment, the input matching circuit 3 includes eight microstrip lines, two capacitors and one resistor; the eight microstrip lines are respectively referred to as the first microstrip line T1, the second microstrip line T2, the third microstrip line T3, the fourth microstrip line T4, the fifth microstrip line T5, the sixth microstrip line T6, the seventh microstrip line T7 and the eighth microstrip line T8, wherein the first microstrip line T1, the second microstrip line T2, the fourth microstrip line T4, the fifth microstrip line T5, the sixth microstrip line T6 and the eighth microstrip line T8 are all rectangular microstrip lines, the third microstrip line T3 and the seventh microstrip line T7 are all T-junction microstrip lines with three connecting ends, the two capacitors are respectively referred to as the first capacitor C1 and the second capacitor C2, the resistor is referred to as the first resistor R1, one end of the first microstrip line T1 is the input end of the input matching circuit 3, and the other end of the first microstrip line T1 is connected to one end of the first capacitor C1; the first capacitor The other end of C1 is connected to one end of the second microstrip line T2, the other end of the second microstrip line T2 is connected to a first connection end of the third microstrip line T3, one end of the fourth microstrip line T4 is connected to the second connection end of the third microstrip line T3, the third connection end of the third microstrip line T3 is connected to one end of the fifth microstrip line T5, the other end of the fifth microstrip line T5 is respectively connected to one end of the first resistor R1 and one end of the second capacitor C2, the other end of the first resistor R1 and the other end of the second capacitor C2 are connected to one end of the sixth microstrip line T6, the other end of the sixth microstrip line T6 is connected to a first connection end of the seventh microstrip line T7, the second connection end of the seventh microstrip line T7 is the bias end of the input matching circuit 3, the third connection end of the seventh microstrip line T7 is connected to one end of the eighth microstrip line T8, and the other end of the eighth microstrip line T8 is the output end of the input matching circuit 3.

[0028] The input matching circuit 3 realizes maximum power transmission and minimum reflection loss by converting the source impedance of the transistor P1 into the system standard 50 ohm impedance. The first capacitor C1 is used as a DC blocking capacitor at the input end of the power amplifier 1. During the design process, by adjusting the electrical length and characteristic impedance of the second microstrip line T2, the third microstrip line T3, the fourth microstrip line T4 and the fifth microstrip line T5, the source impedance can be gradually moved to the matching point of 50 ohms on the circular diagram. The first resistor R1 and the second capacitor C2 form a stable circuit to avoid self-excitation of the input matching circuit 3 and prevent the power amplifier 1 from burning. The reflection coefficient of the input matching circuit 3 is small enough to ensure a good matching effect, meet the system performance requirements, and increase the power transmitted from the external signal source to the transistor P1 and the power transmitted from the transistor P1 to the rear-end load.

[0029] In this embodiment, the first bias circuit 4 includes four microstrip lines, four capacitors and one resistor; the four microstrip lines are respectively referred to as the ninth microstrip line T9, the tenth microstrip line T10, the eleventh microstrip line T11 and the twelfth microstrip line T12, the eleventh microstrip line T11 is an arc microstrip line, the ninth microstrip line T9, the tenth microstrip line T10 and the twelfth microstrip line T12 are all rectangular microstrip lines, the four capacitors are respectively referred to as the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5 and the sixth capacitor C6, the resistor is referred to as the second resistor R2, one end of the ninth microstrip line T9 is the input end of the first bias circuit 4, the other end of the ninth microstrip line T9 is connected to one end of the tenth microstrip line T10, and the tenth microstrip line T11 is connected to one end of the tenth microstrip line T10. The other end of the first microstrip line T10 is connected to one end of the eleventh microstrip line T11, the other end of the eleventh microstrip line T11 is connected to one end of the twelfth microstrip line T12, the other end of the twelfth microstrip line T12 is connected to one end of the second resistor R2, the other end of the second resistor R2 is the output end of the first bias circuit 4, one end of the third capacitor C3, one end of the fourth capacitor C4, one end of the fifth capacitor C5 and one end of the sixth capacitor C6 are all connected to the tenth microstrip line T10, the other end of the third capacitor C3, the other end of the fourth capacitor C4, the other end of the fifth capacitor C5 and the other end of the sixth capacitor C6 are all grounded, and the total length of the tenth microstrip line T10, the eleventh microstrip line T11 and the twelfth microstrip line T12 is one quarter of a wavelength.

[0030] The first bias circuit 4 receives the first power supply voltage through the ninth microstrip line T9. When the first power supply voltage is transmitted to the tenth microstrip line T10, the third capacitor C3, the fourth capacitor C4, the fifth capacitor C5 and the sixth capacitor C6 are connected in parallel to ground to filter out the ripple in the first power supply voltage. The first bias circuit 4 uses the tenth microstrip line T10, the eleventh microstrip line T11 and the twelfth microstrip line T12 to form a high-impedance microstrip line with a total length of one quarter of a wavelength as a radio frequency choke. The filtered voltage is transmitted to the second resistor R2 through the eleventh microstrip line T11 and the twelfth microstrip line T12. The second resistor R2 improves the voltage stability and provides a stable voltage for the gate of the transistor P1 to ensure that it operates at the optimal working point.

[0031] In this embodiment, the second bias circuit 5 includes six microstrip lines and four capacitors; the six microstrip lines are respectively referred to as the thirteenth microstrip line T13, the fourteenth microstrip line T14, the fifteenth microstrip line T15, the sixteenth microstrip line T16, the seventeenth microstrip line T17 and the eighteenth microstrip line T18, the fifteenth microstrip line T15 is an arc microstrip line, the seventeenth microstrip line T17 is a T-junction microstrip line with three connection ends, the thirteenth microstrip line T13, the fourteenth microstrip line T14, the sixteenth microstrip line T16 and the eighteenth microstrip line T18 are all rectangular microstrip lines, the four capacitors are respectively referred to as the seventh capacitor C7, the eighth capacitor C8, the ninth capacitor C9 and the tenth capacitor C10, one end of the thirteenth microstrip line T13 is the input end of the second bias circuit 5, the other end of the thirteenth microstrip line T13 is connected to one end of the fourteenth microstrip line T14, and the other end of the fourteenth microstrip line T14 is connected to the fifteenth microstrip line T15. The first microstrip line T14 is connected to one end of the second bias circuit 5, the other end of the first microstrip line T15 is connected to one end of the first microstrip line T16, the other end of the first microstrip line T16 is connected to a first connection end of the first microstrip line T17, the second connection end of the first microstrip line T17 is connected to one end of the first microstrip line T18, the other end of the first microstrip line T18 is the first output end of the second bias circuit 5, the third connection end of the first microstrip line T17 is the second output end of the second bias circuit 5, one end of the seventh capacitor C7, one end of the eighth capacitor C8, one end of the ninth capacitor C9 and one end of the tenth capacitor C10 are all connected to the fourteenth microstrip line T14, the other end of the seventh capacitor C7, the other end of the eighth capacitor C8, the other end of the ninth capacitor C9 and the other end of the tenth capacitor C10 are all grounded, and the total length of the fourteenth microstrip line T14, the fifteenth microstrip line T15 and the sixteenth microstrip line T16 is one quarter of a wavelength.

[0032] The second bias circuit 5 receives the second power supply voltage through the thirteenth microstrip line T13. When the second power supply voltage is transmitted to the fourteenth microstrip line T14, the seventh capacitor C7, the eighth capacitor C8, the ninth capacitor C9 and the tenth capacitor C10 are connected in parallel to ground to filter out the ripple in the second power supply voltage, and eliminate the high-frequency clutter signals in the second power supply voltage. The second bias circuit 5 uses the fourteenth microstrip line T14, the fifteenth microstrip line T15, and the sixteenth microstrip line T16 to form a high-impedance microstrip line with a total length of one-quarter wavelength as a radio frequency choke. The filtered voltage is stably transmitted to the drain of the transistor P1 through the fifteenth microstrip line T15, the sixteenth microstrip line T16, the seventeenth microstrip line T17 and the eighteenth microstrip line T18, providing a stable bias voltage to ensure that the power amplifier works in a class AB state.

[0033] In this embodiment, the DC isolation output circuit 6 includes a capacitor, which is called the eleventh capacitor C11. One end of the eleventh capacitor C11 is the input end of the DC isolation output circuit 6, and the other end of the eleventh capacitor C11 is the output end of the DC isolation output circuit 6.

[0034] The DC isolation output circuit 6 isolates the DC signal through the eleventh capacitor C11 while allowing the RF AC signal to pass through, ensuring that the signal output to the antenna 2 does not contain a DC signal.

[0035] Embodiment 3: This embodiment is basically the same as Embodiment 2, except that: in this embodiment, as shown in FIG. 3 , the antenna 2 includes a dielectric substrate 7, a radiation patch and a metal ground. The dielectric substrate 7 is in a rectangular shape. The length of the dielectric substrate 7 is taken as the front-to-back direction, the width is taken as the left-to-right direction, and the height is taken as the up-to-down direction. The length of the dielectric substrate 7 is smaller than its width. The plane that makes the dielectric substrate 7 symmetrical in the left-right direction is referred to as the first symmetry plane L1, and the plane that makes the dielectric substrate 7 symmetrical in the front-to-back direction is referred to as the second symmetry plane L2. The radiation patch includes four rectangular metal patches attached to the upper end surface of the dielectric substrate 7. The four rectangular metal patches are respectively referred to as the first rectangular patch M1, the second rectangular patch M2, and the second rectangular patch M3. Three rectangular patches M3 and a fourth rectangular patch M4; the length of the first rectangular patch M1 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end face of the first rectangular patch M1 is located on the left side of the first symmetry plane L1, and there is a distance between the two. The left end face of the first rectangular patch M1 is located on the right side of the plane where the left end face of the dielectric substrate 7 is located, and there is a distance between the two. The front end face of the first rectangular patch M1 is located on the front side of the second symmetry plane L2, and there is a distance between the two. The front end face of the first rectangular patch M1 is located on the rear side of the plane where the front end face of the dielectric substrate 7 is located, and there is a distance between the two. The rear end face of the first rectangular patch M1 is located on the rear side of the second symmetry plane L2, and the two There is a distance between them, the rear end face of the first rectangular patch M1 is located in front of the plane where the rear end face of the dielectric substrate 7 is located, and there is a distance between the two; a rectangular opening is opened on the first rectangular patch M1, and the rectangular opening is called a first rectangular groove W1. The upper end face of the dielectric substrate 7 is exposed at the first rectangular groove W1. The length of the first rectangular groove W1 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The rear end face of the first rectangular groove W1 is located in front of the rear end face of the first rectangular patch M1, and there is a distance between them. The right end face of the first rectangular groove W1 is located on the left side of the right end face of the first rectangular patch M1, and there is a distance between them. The front end face of the first rectangular groove W1 is located at the second The first rectangular patch M1 is located on the rear side of the symmetry plane L2, and there is a distance between the two. The left end face of the first rectangular groove W1 is located on the right side of the left end face of the first rectangular patch M1, and there is a certain distance between the two. The length of the second rectangular patch M2 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The second rectangular patch M2 is located on the rear side of the first rectangular patch M1. The front end face of the second rectangular patch M2 is connected to the rear end face of the first rectangular patch M1 and is in a fitted state. The length of the second rectangular patch M2 is less than the length of the first rectangular patch M1. The right end face of the second rectangular patch M2 and the right end face of the first rectangular patch M1 are located on the same plane. The rear end face of the second rectangular patch M2 and the rear end face of the dielectric substrate 7 are located on the same plane.The third rectangular patch M3 has a length along the front-to-back direction, a width along the left-to-right direction, and a thickness along the up-to-down direction. The third rectangular patch M3 is located on the right side of the second rectangular patch M2. The left end face of the third rectangular patch M3 is connected to the right end face of the second rectangular patch M2 and is in a fitted state. The right end face of the third rectangular patch M3 is located on the right side of the first symmetry plane L1, and there is a distance between the two. The front end face of the third rectangular patch M3 is located on the rear side of the front end face of the second rectangular patch M2, and there is a distance between the two. The rear end face of the third rectangular patch M3 is located on the front side of the rear end face of the second rectangular patch M2, and there is a distance between the two. The fourth rectangular patch M4 has a length along the front-to-back direction, a width along the left-to-right direction, and a thickness along the up-to-down direction. The fourth rectangular patch M4 is located at the front side of the first rectangular patch M1, the rear end face of the fourth rectangular patch M4 is connected to the front end face of the first rectangular patch M1, and is in a fitted state, the right end face of the fourth rectangular patch M4 is located on the same plane as the right end face of the first rectangular patch M1, the left end face of the fourth rectangular patch M4 is located on the same plane as the left end face of the second rectangular patch M2, and the front end face of the fourth rectangular patch M4 is located on the rear side of the plane where the front end face of the dielectric substrate 7 is located, and there is a distance between the two; the metal ground includes thirteen rectangular metal grounds and two right-angled trapezoidal metal grounds, and the thirteen rectangular metal grounds and the two right-angled trapezoidal metal grounds are all attached to the upper end face of the dielectric substrate 7; the thirteen rectangular metal grounds are respectively referred to as the first rectangular metal ground G1 , a second rectangular metal ground G2, a third rectangular metal ground G3, a fourth rectangular metal ground G4, a fifth rectangular metal ground G5, a sixth rectangular metal ground G6, a seventh rectangular metal ground G7, an eighth rectangular metal ground G8, a ninth rectangular metal ground G9, a tenth rectangular metal ground G10, an eleventh rectangular metal ground G11, a twelfth rectangular metal ground G12 and a thirteenth rectangular metal ground G13, the two right-angled trapezoidal metal grounds are respectively referred to as a first right-angled trapezoidal metal ground G14 and a second right-angled trapezoidal metal ground G15; the first rectangular metal ground G1 has a length along the front-to-back direction, a width along the left-to-right direction, and a thickness along the up-down direction; a left end surface of the first rectangular metal ground G1 and a left end surface of the dielectric substrate 7 are located in the same plane, and a front surface of the first rectangular metal ground G1 The end face and the front end face of the dielectric substrate 7 are located in the same plane, the right end face of the first rectangular metal ground G1 is located on the left side of the left end face of the first rectangular patch M1, and there is a distance between the two, the second rectangular metal ground G2 is located on the rear side of the first rectangular metal ground G1, the length of the second rectangular metal ground G2 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction; the front end face of the second rectangular metal ground G2 is connected to the rear end face of the first rectangular metal ground G1 and is in a bonded state, the left end face of the second rectangular metal ground G2 and the left end face of the dielectric substrate 7 are located in the same plane, the rear end face of the second rectangular metal ground G2 and the rear end face of the dielectric substrate 7 are located in the same plane, and the width of the second rectangular metal ground G2 is less than the width of the first rectangular metal ground G1;The third rectangular metal ground G3 is located on the right side of the second rectangular metal ground G2. The length of the third rectangular metal ground G3 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The left end face of the third rectangular metal ground G3 is connected to the right end face of the second rectangular metal ground G2 and is in a bonded state. The rear end face of the third rectangular metal ground G3 and the rear end face of the dielectric substrate 7 are located in the same plane. The sum of the width of the third rectangular metal ground G3 and the width of the second rectangular metal ground G2 is greater than the width of the first rectangular metal ground G1. The length of the third rectangular metal ground G3 is less than the length of the second rectangular metal ground G2. The fourth rectangular metal ground G4 The fourth rectangular metal ground G4 is located on the right side of the third rectangular metal ground G3. The length of the fourth rectangular metal ground G4 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The left end face of the fourth rectangular metal ground G4 is connected to the right end face of the third rectangular metal ground G3 and is in a bonded state. The rear end face of the fourth rectangular metal ground G4 and the rear end face of the dielectric substrate 7 are located in the same plane. The length of the fourth rectangular metal ground G4 is greater than the length of the third rectangular metal ground G3 and less than the length of the second rectangular metal ground G2. The length of the fifth rectangular metal ground G5 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end face and the right end face of the dielectric substrate 7 are located in the same plane, the rear end face of the fifth rectangular metal ground G5 and the rear end face of the dielectric substrate 7 are located in the same plane, the length of the fifth rectangular metal ground G5 is equal to the length of the fourth rectangular metal ground G4, the left end face of the fifth rectangular metal ground G5 is located on the right side of the first symmetry plane L1, and there is a distance between the two, the left end face of the fifth rectangular metal ground G5 is located on the left side of the right end face of the third rectangular patch M3, and there is a distance between the two, and the front end face of the fifth rectangular metal ground G5 is located on the rear side of the rear end face of the third rectangular patch M3, and there is a distance between the two; The sixth rectangular metal ground G6 is located at the front side of the fifth rectangular metal ground G5, the length of the sixth rectangular metal ground G6 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end face of the sixth rectangular metal ground G6 and the right end face of the dielectric substrate 7 are located in the same plane, the front end face of the sixth rectangular metal ground G6 and the front end face of the dielectric substrate 7 are located in the same plane, the left end face of the sixth rectangular metal ground G6 is located on the right side of the plane where the right end face of the third rectangular patch M3 is located, and there is a distance between the two, and the rear end face of the sixth rectangular metal ground G6 is connected to the front end face of the fifth rectangular metal ground G5, and they are in a bonded state;The seventh rectangular metal ground G7 is located on the left side of the sixth rectangular metal ground G6. The length of the seventh rectangular metal ground G7 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The front end face of the seventh rectangular metal ground G7 and the front end face of the dielectric substrate 7 are located in the same plane. The left end face of the seventh rectangular metal ground G7 is located on the right side of the first symmetry plane L1, and there is a distance between the two. The right end face of the seventh rectangular metal ground G7 is connected to the left end face of the sixth rectangular metal ground G6 and is in a fitted state. The rear end face of the seventh rectangular metal ground G7 is located on the front side of the plane where the front end face of the fourth rectangular patch M4 is located, and there is a distance between the two. The width of the sixth rectangular metal ground G6 is equal to the width of the seventh rectangular metal ground G7. The sum of the degrees is greater than the width of the fifth rectangular metal ground G5; the eighth rectangular metal ground G8 is located on the left side of the seventh rectangular metal ground G7, the length of the eighth rectangular metal ground G8 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The front end face of the eighth rectangular metal ground G8 and the front end face of the dielectric substrate 7 are located in the same plane, the length of the eighth rectangular metal ground G8 is less than the length of the seventh rectangular metal ground G7, the right end face of the eighth rectangular metal ground G8 is connected to the left end face of the seventh rectangular metal ground G7, and they are in a fitted state, the left end face of the eighth rectangular metal ground G8 is located on the left side of the plane where the right end face of the fourth rectangular patch M4 is located, and there is a distance between the two, and the left end face of the eighth rectangular metal ground G8 is located on the first The ninth rectangular metal ground G9 is located on the right side of the plane where the right end face of the rectangular groove W1 is located, and there is a distance between the two; the ninth rectangular metal ground G9 is located on the left side of the eighth rectangular metal ground G8, the length of the ninth rectangular metal ground G9 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The front end face of the ninth rectangular metal ground G9 and the front end face of the dielectric substrate 7 are located in the same plane, the rear end face of the ninth rectangular metal ground G9 and the rear end face of the seventh rectangular metal ground G7 are located in the same plane, the left end face of the ninth rectangular metal ground G9 is connected to the right end face of the first rectangular metal ground G1, and they are in a fitted state, and the right end face of the ninth rectangular metal ground G9 is connected to the left end face of the eighth rectangular metal ground G8, and they are in a fitted state; the tenth rectangular metal ground G1 0 is located at the rear side of the ninth rectangular metal ground G9, the length of the tenth rectangular metal ground G10 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the right end face of the tenth rectangular metal ground G10 is located on the right side of the plane where the right end face of the fourth rectangular metal ground G4 is located, and there is a distance between the two, the left end face of the tenth rectangular metal ground G10 is located on the right side of the plane where the left end face of the first rectangular patch M1 is located, and there is a distance between the two, the front end face of the tenth rectangular metal ground G10 is connected to the rear end face of the ninth rectangular metal ground G9, and they are in a fitted state, and the rear end face of the tenth rectangular metal ground G10 is located on the front side of the plane where the front end face of the fourth rectangular patch M4 is located, and there is a distance between the two;The eleventh rectangular metal ground G11 is located at the rear side of the tenth rectangular metal ground G10, the length of the eleventh rectangular metal ground G11 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The left end face of the eleventh rectangular metal ground G11 is connected to the right end face of the first rectangular metal ground G1, and they are in a fitted state. The right end face of the eleventh rectangular metal ground G11 and the right end face of the tenth rectangular metal ground G10 are located on the same plane. The front end face of the eleventh rectangular metal ground G11 is connected to the rear end face of the tenth rectangular metal ground G10, and they are in a fitted state. The rear end face of the eleventh rectangular metal ground G11 is located at the rear side of the plane where the front end face of the fourth rectangular patch M4 is located, and there is a distance between the two. The rear end face of the eleventh rectangular metal ground G11 is located at The twelfth rectangular metal ground G12 is located on the left side of the sixth rectangular metal ground G6, the length of the twelfth rectangular metal ground G12 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The front end face of the twelfth rectangular metal ground G12 is located on the rear side of the plane where the front end face of the first rectangular groove W1 is located, and there is a distance between the two. The front end face of the twelfth rectangular metal ground G12 is located on the front side of the plane where the rear end face of the first rectangular groove W1 is located, and there is a distance between the two. The rear end face of the twelfth rectangular metal ground G12 is located on the rear side of the plane where the rear end face of the first rectangular groove W1 is located, and there is a distance between the two. The twelfth rectangular metal The right end face of the sixth rectangular metal ground G12 is connected to the left end face of the sixth rectangular metal ground G6, and are in a fitted state; the thirteenth rectangular metal ground G13 is located on the left side of the twelfth rectangular metal ground G12, the length of the thirteenth rectangular metal ground G13 is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the left end face of the thirteenth rectangular metal ground G13 is located on the right side of the right end face of the third rectangular patch M3, and there is a distance between the two, the front end face of the thirteenth rectangular metal ground G13 is located in the same plane as the front end face of the twelfth rectangular metal ground G12, the rear end face of the thirteenth rectangular metal ground G13 is connected to the front end face of the fifth rectangular metal ground G5, and the two are in a fitted state, the right end face of the thirteenth rectangular metal ground G13 is connected to the twelfth rectangular metal ground G1 2, and the two are in a fitted state; the first right-angled trapezoidal metal ground G14 is located on the right side of the fourth rectangular metal ground G4, the upper base and the lower base of the first right-angled trapezoidal metal ground G14 both extend in the front-to-back direction, and its lower base is located on the left side of its upper base, and its oblique waist is located on the front side of its right-angle waist, the lower base of the first right-angled trapezoidal metal ground G14 is connected to the right end face of the fourth rectangular metal ground G4, and are in a fitted state, the right-angled side of the first right-angled trapezoidal metal ground G14 and the rear end face of the dielectric substrate 7 are located in the same plane, the upper base of the first right-angled trapezoidal metal ground G14 is located on the left side of the left end face of the second rectangular patch M2, and there is a distance between the two, and the length of the lower base of the first right-angled trapezoidal metal ground G14 is equal to the length of the fourth rectangular metal ground G4;The second right-angled trapezoidal metal ground G15 is located on the left side of the fifth rectangular metal ground G5 and on the right side of the second rectangular patch M2. The plane that makes the second rectangular patch M2 bilaterally symmetrical is called the third symmetry plane. The first right-angled trapezoidal metal ground G14 and the second right-angled trapezoidal metal ground G15 are bilaterally symmetrical about the third symmetry plane.

[0036] In this embodiment, the rear end face of the second rectangular patch M2 serves as the input end of the antenna 2 and is connected to the output end of the power amplifier 1. The RF signal outputted from the output end of the power amplifier 1 enters the antenna 2 through the rear end face of the second rectangular patch M2, and the rear end face of the second rectangular patch M2 transmits the signal to the entire radiation patch. The radiation patch is a key part of the antenna 2, which converts electrical signals into electromagnetic waves. When the RF signal propagates in the radiation patch, it will generate changing electric and magnetic fields at the edge of the radiation patch, thereby radiating electromagnetic waves. The asymmetric feeding structure formed by the second rectangular patch M2, the third rectangular patch M3 and the first rectangular patch M1 can adjust the distribution of current, ensure that the signal is effectively transmitted to the radiation patch, reduce reflection and loss, and improve impedance matching and circularly polarized radiation performance. The metal ground adopts an asymmetric structure. On the diagonal of the metal ground, the tenth rectangular metal ground G10 and the eleventh rectangular metal ground G11 constitute the first L-shaped strip, and the twelfth rectangular metal ground G12 and the thirteenth rectangular metal ground G13 constitute the second L-shaped strip. The existence of the first L-shaped strip and the second L-shaped strip introduces asymmetry, which disturbs the current distribution, thereby generating current components with equal amplitude and 90 degrees phase difference in two orthogonal directions, thereby generating circularly polarized waves. When the RF signal enters the radiation patch, the current will flow between the radiation patch and the ground plane. Because the ground plane is asymmetric and has L-shaped strips, the path of the current is changed, generating current components in two orthogonal directions, with a phase difference of 90 degrees and equal amplitude, thereby generating circularly polarized waves. The currents in the left rear part and the right front ground plane of the metal ground can offset each other, so that the main current is distributed at the edge of the radiation patch, the first L-shaped strip and the second L-shaped strip. According to the quadrilateral rule, it can be analyzed that the current vector and amplitude of antenna 2 at 0°, 90°, 180° and 270° phases are equal, and the phase difference is 90 degrees, which meets the conditions for producing circular polarization performance. In the process of phase change, the rotation direction of the total current is reverse, so the circular polarization mode of this antenna 2 in the main radiation direction is right-handed. By adjusting the size of the triangular notch formed at the hypotenuse of the first right-angle trapezoidal metal ground G14 and the second right-angle trapezoidal metal ground G15 during the design process, the size of the slot formed between the first rectangular metal ground G1, the second rectangular metal ground G2, the third rectangular metal ground G3 and the fourth rectangular metal ground G4, and the length and width of the first rectangular slot W1, more parameters are introduced, which is convenient for adjusting the impedance characteristics of antenna 2 so that it directly matches the output impedance of power amplifier 1, and reduces signal reflection and loss, thereby improving the performance of antenna 2.

[0037] Embodiment 4: This embodiment is basically the same as Embodiment 3, except that: in this embodiment, the dielectric substrate 7 is made of Rogers 4350B, which has a length of 65.8 mm, a width of 76.3 mm, and a thickness of 0.762 mm; the first rectangular patch M1 has a length of 18.6 mm, a width of 20 mm, and a thickness of 0.025 mm; the second rectangular patch M2 has a length of 16.91 mm, a width of 8.8 mm, and a thickness of 0.025 mm; the third rectangular patch M3 has a length of 6.5 mm, a width of 7.6 mm, and a thickness of 0.025 mm; the fourth rectangular patch M4 has a length of 8.69 mm, a width of 8.8 mm, and a thickness of The length of the first rectangular metal ground G1 is 53.9mm, the width is 9.25mm, and the thickness is 0.025mm; the length of the second rectangular metal ground G2 is 11.9mm, the width is 6.45mm, and the thickness is 0.025mm; the length of the third rectangular metal ground G3 is 6.7mm, the width is 6.3mm, and the thickness is 0.025mm; the length of the fourth rectangular metal ground G4 is 9.3mm, the width is 12.28mm, and the thickness is 0.025mm; the length of the fifth rectangular metal ground G5 is 9.3mm, the width is 35.23mm, and the thickness is 0.025mm; the length of the sixth rectangular metal ground G6 is 5 6.5mm, width 14.35mm, thickness 0.025mm, the seventh rectangular metal ground G7 has a length of 3.9mm, width 21.25mm, thickness 0.025mm, the eighth rectangular metal ground G8 has a length of 2.1mm, width 5.1mm, thickness 0.025mm, the ninth rectangular metal ground G9 has a length of 3.9mm, width 26.35mm, thickness 0.025mm, the tenth rectangular metal ground G10 has a length of 14.13mm, width 4.19mm, thickness 0.025mm, the eleventh rectangular metal ground G11 has a length of 4.19mm, width 16.69mm, thickness The twelfth rectangular metal ground G12 has a length of 4.19mm, a width of 12.4mm and a thickness of 0.025mm; the thirteenth rectangular metal ground G13 has a length of 14.89mm, a width of 4.19mm and a thickness of 0.025mm; the lower base length of the first right-angled trapezoidal metal ground G14 is 9.3mm, the upper base length is 7.7mm, and the right-angle waist length is 3.4mm; the lower base length of the second right-angled trapezoidal metal ground G15 is 9.3mm, the upper base length is 7.7mm, and the right-angle waist length is 3.4mm; the first rectangular groove W1 has a length of 5.1mm, a width of 6.6mm and a thickness of 0.025mm.The first microstrip line T1 has a length of 6 mm and a width of 1.6 mm, the second microstrip line T2 has a length of 3.1 mm and a width of 1 mm, the third microstrip line T3 has a first connection end width of 1 mm, a second connection end width of 3.3 mm, and a third connection end width of 1.1 mm, the fourth microstrip line T4 has a length of 2.1 mm and a width of 3.3 mm, the fifth microstrip line T5 has a length of 1 mm and a width of 1.1 mm, the sixth microstrip line T6 has a length of 9.3 mm and a width of 7 mm, the seventh microstrip line T7 has a first connection end width of 7 mm, a second connection end width of 7.7 mm, and a third connection end width of 0.9 mm, the eighth microstrip line T8 has a length of 1 mm and a width of 7.7 mm, the ninth microstrip line T9 has a length of 7 mm and a width of 7 mm, and the tenth microstrip line T10 has a length of 1 mm and a width of 1.1 mm. The length of line T10 is 9 mm and the width is 0.9 mm. The width of the eleventh microstrip line T11 is 0.9 mm, the radius is 2 mm, and the angle is 90 degrees. The length of the twelfth microstrip line T12 is 14.8 mm and the width is 0.9 mm. The length of the thirteenth microstrip line T13 is 7 mm and the width is 7 mm. The length of the fourteenth microstrip line T14 is 11 mm and the width is 0.9 mm. The width of the fifteenth microstrip line T15 is 0.9 mm, the radius is 2 mm, and the angle is 90 degrees. The length of the sixteenth microstrip line T16 is 13.8 mm and the width is 0.9 mm. The width of the first connection end of the seventeenth microstrip line T17 is 3 mm, the width of the second connection end is 0.9 mm, and the width of the third connection end is 0.9 mm. The length of the eighteenth microstrip line T18 is 2.4 mm and the width is 0.9 mm. The resistance value of the first resistor R1 is 33 Ω, and the resistance value of the second resistor R2 is 1000 Ω. The capacitance value of the first capacitor C1 is 9pF, the capacitance value of the second capacitor C2 is 4pF, the capacitance value of the third capacitor C3 is 47μF, the capacitance value of the fourth capacitor C4 is 22000pF, the capacitance value of the fifth capacitor C5 is 39pF, the capacitance value of the sixth capacitor C6 is 9pF, the capacitance value of the seventh capacitor C7 is 47μF, the capacitance value of the eighth capacitor C8C8 is 22000pF, the capacitance value of the ninth capacitor C9 is 39pF, the capacitance value of the tenth capacitor C10 is 9pF, and the capacitance value of the eleventh capacitor C11 is 9pF. The transistor P1 model is CGH40010F. The first power supply voltage is -2.8V, and the second power supply voltage is 28V.

[0038] In order to verify the performance of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention, the integrated structure of the power amplifier and the circularly polarized antenna of the present invention is simulated. The normalized radiation pattern of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention in the horizontal plane is shown in FIG4(a); the normalized radiation pattern of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention in the vertical plane is shown in FIG4(b); the EIRP and active gain comparison of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention and the traditional cascade when the input power is 28dBm is shown in FIG4(b). Figure 5 As shown; the integrated structure of the power amplifier and circularly polarized antenna of the present invention is compared with the traditional cascade 2.5GHz signal PAE and output power as shown in the figure Figure 6 As shown; the integrated structure of the power amplifier and circular polarization antenna of the present invention and the traditional cascade PAE and output power comparison diagram when the input power is 28dBm Figure 7 As shown; the simulation AR diagram of the integrated structure of the power amplifier and circular polarization antenna of the present invention is as follows Figure 8 shown. Figures 5 to 7 In the figure, integration represents the integrated structure of the power amplifier and the circularly polarized antenna of the present invention, and the traditional cascade is a power amplifier and a circularly polarized antenna integrated structure formed by cascading the power amplifier designed in the document "Continuous Inverse Class F Power Amplifier Based on Step Impedance Matching Network_Mi Congwei" through a traditional impedance matching circuit and the circularly polarized antenna designed in the document "Research and Design of Broadband Circularly Polarized Microstrip Antenna_Chen Hua".

[0039] 4 (a) and 4 (b), it can be seen that: in the integrated structure of the power amplifier and the circularly polarized antenna of the present invention, the antenna excitation is right-hand circular polarization (RHCP), and the cross polarization is left-hand circular polarization (LHCP);

[0040] analyze Figure 5 It can be seen that: when the input power is 28dBm, the EIRP of the integrated structure of the power amplifier and circular polarization antenna of the present invention exceeds 44dBm in the frequency range of 2.1GHz to 2.9GHz. In the same frequency range, the active gain is greater than 16dB, and the maximum gain at 2.5GHz is about 17dB. Due to the existence of insertion and mismatch losses, the active gain measured by the traditional cascade in the frequency range of 2.1GHz to 2.9GHz is about 1dB to 2dB lower than the active gain of the integrated structure of the power amplifier and circular polarization antenna of the present invention;

[0041] analyze Figure 6It can be seen that: at 2.5GHz, when the input power is 28dBm, the maximum PAE of the integrated structure of the power amplifier and circular polarization antenna of the present invention is 66%, and the maximum PAE of the traditional cascade is 61%. The integrated structure of the power amplifier and circular polarization antenna of the present invention is improved by more than 5% compared with the traditional cascade. And under the same input power, the output power of the integrated structure of the power amplifier and circular polarization antenna of the present invention is 41dBm, and the output power of the traditional cascade is only 38dBm;

[0042] analyze Figure 7 It can be seen that: when the input power is 28dBm, in the test frequency range of 2GHz to 3GHz, the PAE and output power of the integrated structure of the power amplifier and circularly polarized antenna of the present invention are always better than the traditional cascade. In the required frequency range of 2.3GHz to 2.7GHz, the PAE of the integrated structure of the power amplifier and circularly polarized antenna of the present invention exceeds 60%, and the output power is higher than 39dBm, and at 2.5GHz, the maximum PAE is 67%, and the output power is 40dBm. Compared with the traditional cascade, the output power of the integrated structure of the power amplifier and circularly polarized antenna of the present invention is increased by about 2dBm at 2.5GHz, and the PAE is also correspondingly about 11% higher;

[0043] analyze Figure 8 It can be seen that the 3dB axial ratio bandwidth of the integrated structure of the power amplifier and the circularly polarized antenna of the present invention is 800MHz (2.25GHz~3.05GHz), covering the required frequency band;

[0044] In summary, the integrated structure of the power amplifier and circularly polarized antenna of the present invention shows significant advantages in key performance indicators such as radiation characteristics, gain, power added efficiency and output power. Its wide-band axial ratio characteristics also meet the requirements of the required frequency band, thus surpassing the traditional cascade in overall performance and having broad application potential.

Claims

1. An integrated structure of a power amplifier and a circularly polarized antenna, comprising a power amplifier and an antenna integrated together, characterized in that The antenna is a circularly polarized antenna, and the input impedance of the antenna is directly matched to the output impedance of the power amplifier through a CPW feeding method.

2. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 1, characterized in that The power amplifier comprises an input matching circuit, a first bias circuit, a second bias circuit, a transistor and a DC isolation output circuit, wherein the input matching network has an input end, an output end and a bias end, the first bias circuit and the DC isolation output circuit both have an input end and an output end, the second bias circuit has an input end, a first output end and a second output end, the input end of the input matching circuit is the input end of the power amplifier, the output end of the input matching circuit is connected to the gate of the transistor, the bias end of the input matching network is connected to the output end of the first bias circuit, the drain of the transistor is connected to the first output end of the second bias circuit, the source of the transistor is grounded, the input end of the DC isolation output circuit and the second bias circuit are connected to each other. The second output end of the circuit is connected, the output end of the DC isolation output circuit is the output end of the power amplifier, the input end of the power amplifier is used to access an external signal, the output end of the power amplifier is connected to the antenna, the input end of the first bias circuit is used to connect to an external power supply, access a first power supply voltage, the first bias circuit is used to convert the accessed first power supply voltage into a first bias voltage loaded on the gate of the transistor, the input end of the second bias circuit is used to connect to an external power supply, access a second power supply voltage, the second bias circuit is used to convert the accessed second power supply voltage into a second bias voltage loaded on the drain of the transistor, and the first bias voltage and the second bias voltage are used to make the transistor work in a class AB state.

3. An integrated structure of a power amplifier and a circularly polarized antenna according to claim 2, characterized in that The input matching circuit comprises eight microstrip lines, two capacitors and one resistor; the eight microstrip lines are respectively referred to as the first microstrip line, the second microstrip line, the third microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the seventh microstrip line and the eighth microstrip line, wherein the first microstrip line, the second microstrip line, the fourth microstrip line, the fifth microstrip line, the sixth microstrip line and the eighth microstrip line are all rectangular microstrip lines, the third microstrip line and the seventh microstrip line are all T-junction microstrip lines with three connecting ends, the two capacitors are respectively referred to as the first capacitor and the second capacitor, the resistor is referred to as the first resistor, one end of the first microstrip line is the input end of the input matching circuit, the other end of the first microstrip line is connected to one end of the first capacitor, and the other end of the first capacitor is connected to one end of the second microstrip line The second microstrip line is connected to a first connection end of the third microstrip line, one end of the fourth microstrip line is connected to a second connection end of the third microstrip line, the third connection end of the third microstrip line is connected to one end of the fifth microstrip line, the other end of the fifth microstrip line is respectively connected to one end of the first resistor and one end of the second capacitor, the other end of the first resistor and the other end of the second capacitor are connected to one end of the sixth microstrip line, the other end of the sixth microstrip line is connected to a first connection end of the seventh microstrip line, the second connection end of the seventh microstrip line is the bias end of the input matching circuit, the third connection end of the seventh microstrip line is connected to one end of the eighth microstrip line, and the other end of the eighth microstrip line is the output end of the input matching circuit.

4. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 2, characterized in that The first bias circuit includes four microstrip lines, four capacitors and one resistor; The four microstrip lines are respectively referred to as the ninth microstrip line, the tenth microstrip line, the eleventh microstrip line and the twelfth microstrip line, the eleventh microstrip line is an arc microstrip line, the ninth microstrip line, the tenth microstrip line and the twelfth microstrip line are all rectangular microstrip lines, the four capacitors are respectively referred to as the third capacitor, the fourth capacitor, the fifth capacitor and the sixth capacitor, the resistor is referred to as the second resistor, one end of the ninth microstrip line is the input end of the first bias circuit, the other end of the ninth microstrip line is connected to one end of the tenth microstrip line, the other end of the tenth microstrip line is connected to one end of the eleventh microstrip line, and the eleventh microstrip line The other end of is connected to one end of the twelfth microstrip line, the other end of the twelfth microstrip line is connected to one end of the second resistor, the other end of the second resistor is the output end of the first bias circuit, one end of the third capacitor, one end of the fourth capacitor, one end of the fifth capacitor and one end of the sixth capacitor are all connected to the tenth microstrip line, the other end of the third capacitor, the other end of the fourth capacitor, the other end of the fifth capacitor and the other end of the sixth capacitor are all grounded, and the total length of the tenth microstrip line, the eleventh microstrip line and the twelfth microstrip line is one quarter of a wavelength.

5. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 2, characterized in that The second bias circuit includes six microstrip lines and four capacitors; the six microstrip lines are respectively called the thirteenth microstrip line, the fourteenth microstrip line, the fifteenth microstrip line, the sixteenth microstrip line, the seventeenth microstrip and the eighteenth microstrip line, the fifteenth microstrip line is an arc microstrip line, the seventeenth microstrip line is a T-junction microstrip line with three connection ends, the thirteenth microstrip line, the fourteenth microstrip line, the sixteenth microstrip line and the eighteenth microstrip line are all rectangular microstrip lines, the four capacitors are respectively called the seventh capacitor, the eighth capacitor, the ninth capacitor and the tenth capacitor, one end of the thirteenth microstrip line is the input end of the second bias circuit, the other end of the thirteenth microstrip line is connected to one end of the fourteenth microstrip line, the other end of the fourteenth microstrip line is connected to one end of the fifteenth microstrip line, and the other end of the fifteenth microstrip line is connected to One end of the sixteenth microstrip line is connected, the other end of the sixteenth microstrip line is connected to the first connection end of the seventeenth microstrip line, the second connection end of the seventeenth microstrip line is connected to one end of the eighteenth microstrip line, the other end of the eighteenth microstrip line is the first output end of the second bias circuit, the third connection end of the seventeenth microstrip line is the second output end of the second bias circuit, one end of the seventh capacitor, one end of the eighth capacitor, one end of the ninth capacitor and one end of the tenth capacitor are all connected to the fourteenth microstrip line, the other end of the seventh capacitor, the other end of the eighth capacitor, the other end of the ninth capacitor and the other end of the tenth capacitor are all grounded, and the total length of the fourteenth microstrip line, the fifteenth microstrip line and the sixteenth microstrip line is one quarter wavelength.

6. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 2, characterized in that The DC isolation output circuit includes a capacitor, which is called the eleventh capacitor. One end of the eleventh capacitor is the input end of the DC isolation output circuit, and the other end of the eleventh capacitor is the output end of the DC isolation output circuit.

7. The integrated structure of a power amplifier and a circularly polarized antenna according to claim 1, characterized in that The antenna includes a dielectric substrate, a radiation patch and a metal ground. The dielectric substrate is in the shape of a cuboid. The length of the dielectric substrate is taken as the front-to-back direction, the width is taken as the left-to-right direction, and the height is taken as the up-to-down direction. The length of the dielectric substrate is smaller than its width. The plane that makes the dielectric substrate symmetrical in the left-to-right direction is called the first symmetry plane, and the plane that makes the dielectric substrate symmetrical in the front-to-back direction is called the second symmetry plane. The radiation patch includes four rectangular metal patches attached to the upper end surface of the dielectric substrate. The four rectangular metal patches are respectively called the first rectangular patch, the second rectangular patch, the third rectangular patch and the fourth rectangular patch. The length of the first rectangular patch is taken as the front-to-back direction. , the width is along the left-right direction, the thickness is along the up-down direction, the right end face of the first rectangular patch is located on the left side of the first symmetry plane, and there is a distance between the two, the left end face of the first rectangular patch is located on the right side of the plane where the left end face of the dielectric substrate is located, and there is a distance between the two, the front end face of the first rectangular patch is located on the front side of the second symmetry plane, and there is a distance between the two, the front end face of the first rectangular patch is located on the rear side of the plane where the front end face of the dielectric substrate is located, and there is a distance between the two, the rear end face of the first rectangular patch is located on the rear side of the second symmetry plane, and there is a distance between the two, and the rear end face of the first rectangular patch is located on the The first rectangular patch is provided with a rectangular opening, which is called a first rectangular groove. The upper end surface of the dielectric substrate is exposed at the first rectangular groove. The length of the first rectangular groove is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The rear end surface of the first rectangular groove is located in front of the rear end surface of the first rectangular patch, and there is a distance between the two. The right end surface of the first rectangular groove is located on the left side of the right end surface of the first rectangular patch, and there is a distance between the two. The front end surface of the first rectangular groove is located on the rear side of the second symmetry plane, and the two There is a distance between them, the left end face of the first rectangular groove is located on the right side of the left end face of the first rectangular patch, and there is a certain distance between the two; the length of the second rectangular patch is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the second rectangular patch is located on the rear side of the first rectangular patch, the front end face of the second rectangular patch is connected to the rear end face of the first rectangular patch and is in a fitted state, the length of the second rectangular patch is less than the length of the first rectangular patch, the right end face of the second rectangular patch is located on the same plane as the right end face of the first rectangular patch, and the rear end face of the second rectangular patch is located on the same plane as the rear end face of the dielectric substrate;The third rectangular patch has a length along the front-to-back direction, a width along the left-to-right direction, and a thickness along the up-to-down direction. The third rectangular patch is located on the right side of the second rectangular patch. The left end face of the third rectangular patch is connected to the right end face of the second rectangular patch and is in a fitted state. The right end face of the third rectangular patch is located on the right side of the first symmetry plane, and there is a distance between the two. The front end face of the third rectangular patch is located on the rear side of the front end face of the second rectangular patch, and there is a distance between the two. The rear end face of the third rectangular patch is located on the front side of the rear end face of the second rectangular patch, and there is a distance between the two. The fourth rectangular patch has a length along the front-to-back direction, a width along the left-to-right direction, and a thickness along the up-to-down direction. , the thickness is along the up-down direction, the fourth rectangular patch is located at the front side of the first rectangular patch, the rear end face of the fourth rectangular patch is connected to the front end face of the first rectangular patch, and is in a fitted state, the right end face of the fourth rectangular patch is located on the same plane as the right end face of the first rectangular patch, the left end face of the fourth rectangular patch is located on the same plane as the left end face of the second rectangular patch, the front end face of the fourth rectangular patch is located on the rear side of the plane where the front end face of the dielectric substrate is located, and there is a distance between the two; the metal ground includes thirteen rectangular metal grounds and two right-angled trapezoidal metal grounds, the thirteen rectangular metal grounds and the two right-angled trapezoidal metal grounds are all attached to the upper end face of the dielectric substrate, The thirteen rectangular metal grounds are respectively called the first rectangular metal ground, the second rectangular metal ground, the third rectangular metal ground, the fourth rectangular metal ground, the fifth rectangular metal ground, the sixth rectangular metal ground, the seventh rectangular metal ground, the eighth rectangular metal ground, the ninth rectangular metal ground, the tenth rectangular metal ground, the eleventh rectangular metal ground, the twelfth rectangular metal ground and the thirteenth rectangular metal ground, and the two right-angled trapezoidal metal grounds are respectively called the first right-angled trapezoidal metal ground and the second right-angled trapezoidal metal ground; the length of the first rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction; the left end face of the first rectangular metal ground and the left end face of the dielectric substrate are located in the same plane, and the front end face of the first rectangular metal ground and the front end face of the dielectric substrate are located at the same plane. The first rectangular metal ground is located on the same plane, the right end face of the first rectangular metal ground is located on the left side of the left end face of the first rectangular patch, and there is a distance between the two; the second rectangular metal ground is located on the rear side of the first rectangular metal ground, the length of the second rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the front end face of the second rectangular metal ground is connected to the rear end face of the first rectangular metal ground and is in a bonded state, the left end face of the second rectangular metal ground and the left end face of the dielectric substrate are located on the same plane, the rear end face of the second rectangular metal ground and the rear end face of the dielectric substrate are located on the same plane, and the width of the second rectangular metal ground is less than the width of the first rectangular metal ground;The third rectangular metal ground is located on the right side of the second rectangular metal ground, the length of the third rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The left end face of the third rectangular metal ground is connected to the right end face of the second rectangular metal ground and is in a fitted state. The rear end face of the third rectangular metal ground and the rear end face of the dielectric substrate are located in the same plane. The sum of the width of the third rectangular metal ground and the width of the second rectangular metal ground is greater than the width of the first rectangular metal ground, and the length of the third rectangular metal ground is less than the length of the second rectangular metal ground. The fourth rectangular metal ground The metal ground is located on the right side of the third rectangular metal ground, the length of the fourth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The left end face of the fourth rectangular metal ground is connected to the right end face of the third rectangular metal ground and is in a fitted state. The rear end face of the fourth rectangular metal ground and the rear end face of the dielectric substrate are located in the same plane. The length of the fourth rectangular metal ground is greater than the length of the third rectangular metal ground and less than the length of the second rectangular metal ground. The length of the fifth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end surface of the fifth rectangular metal ground is located in the same plane as the right end surface of the dielectric substrate, the rear end surface of the fifth rectangular metal ground is located in the same plane as the rear end surface of the dielectric substrate, the length of the fifth rectangular metal ground is equal to the length of the fourth rectangular metal ground, the left end surface of the fifth rectangular metal ground is located on the right side of the first symmetry plane, and there is a distance between the two, the left end surface of the fifth rectangular metal ground is located on the left side of the right end surface of the third rectangular patch, and there is a distance between the two, and the front end surface of the fifth rectangular metal ground is located on the rear side of the rear end surface of the third rectangular patch, and there is a distance between the two; The sixth rectangular metal ground is located at the front side of the fifth rectangular metal ground, the length of the sixth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end face of the sixth rectangular metal ground and the right end face of the dielectric substrate are located in the same plane, the front end face of the sixth rectangular metal ground and the front end face of the dielectric substrate are located in the same plane, the left end face of the sixth rectangular metal ground is located on the right side of the plane where the right end face of the third rectangular patch is located, and there is a distance between the two, and the rear end face of the sixth rectangular metal ground is connected to the front end face of the fifth rectangular metal ground, and they are in a bonded state;The seventh rectangular metal ground is located on the left side of the sixth rectangular metal ground, the length of the seventh rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The front end face of the seventh rectangular metal ground and the front end face of the dielectric substrate are located in the same plane, the left end face of the seventh rectangular metal ground is located on the right side of the first symmetry plane, and there is a distance between the two, the right end face of the seventh rectangular metal ground is connected to the left end face of the sixth rectangular metal ground, and they are in a fitted state, the rear end face of the seventh rectangular metal ground is located on the front side of the plane where the front end face of the fourth rectangular patch is located, and there is a distance between the two, the width of the sixth rectangular metal ground is the same as that of the seventh rectangular metal ground. The sum of the widths of the eight rectangular metal grounds is greater than the width of the fifth rectangular metal ground; the eighth rectangular metal ground is located on the left side of the seventh rectangular metal ground, the length of the eighth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the front end face of the eighth rectangular metal ground and the front end face of the dielectric substrate are located in the same plane, the length of the eighth rectangular metal ground is less than the length of the seventh rectangular metal ground, the right end face of the eighth rectangular metal ground is connected to the left end face of the seventh rectangular metal ground, and they are in a fitted state, the left end face of the eighth rectangular metal ground is located on the left side of the plane where the right end face of the fourth rectangular patch is located, and there is a distance between the two, and the left end face of the eighth rectangular metal ground The ninth rectangular metal ground is located on the right side of the plane where the right end face of the first rectangular groove is located, and there is a distance between the two; the ninth rectangular metal ground is located on the left side of the eighth rectangular metal ground, the length of the ninth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The front end face of the ninth rectangular metal ground and the front end face of the dielectric substrate are located in the same plane, the rear end face of the ninth rectangular metal ground and the rear end face of the seventh rectangular metal ground are located in the same plane, the left end face of the ninth rectangular metal ground is connected to the right end face of the first rectangular metal ground, and they are in a fitted state, and the right end face of the ninth rectangular metal ground is connected to the left end face of the eighth rectangular metal ground, and they are in a fitted state; The tenth rectangular metal ground is located at the rear side of the ninth rectangular metal ground, the length of the tenth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The right end face of the tenth rectangular metal ground is located at the right side of the plane where the right end face of the fourth rectangular metal ground is located, and there is a distance between the two. The left end face of the tenth rectangular metal ground is located at the right side of the plane where the left end face of the first rectangular patch is located, and there is a distance between the two. The front end face of the tenth rectangular metal ground is connected to the rear end face of the ninth rectangular metal ground and is in a fitted state. The rear end face of the tenth rectangular metal ground is located at the front side of the plane where the front end face of the fourth rectangular patch is located, and there is a distance between the two.The eleventh rectangular metal ground is located on the rear side of the tenth rectangular metal ground, the length of the eleventh rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction. The left end face of the eleventh rectangular metal ground is connected to the right end face of the first rectangular metal ground and is in a fitted state. The right end face of the eleventh rectangular metal ground and the right end face of the tenth rectangular metal ground are located on the same plane. The front end face of the eleventh rectangular metal ground is connected to the rear end face of the tenth rectangular metal ground and is in a fitted state. The rear end face of the eleventh rectangular metal ground is located on the rear side of the plane where the front end face of the fourth rectangular patch is located, and there is a distance between the two. The rear end face of the eleventh rectangular metal ground is located. The front side of the plane where the rear end face of the fourth rectangular patch is located, and there is a distance between the two; the twelfth rectangular metal ground is located on the left side of the sixth rectangular metal ground, the length of the twelfth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the front end face of the twelfth rectangular metal ground is located on the rear side of the plane where the front end face of the first rectangular groove is located, and there is a distance between the two, the front end face of the twelfth rectangular metal ground is located on the front side of the plane where the rear end face of the first rectangular groove is located, and there is a distance between the two, the rear end face of the twelfth rectangular metal ground is located on the rear side of the plane where the rear end face of the first rectangular groove is located, and there is a distance between the two, the twelfth rectangular The right end face of the metal ground is connected to the left end face of the sixth rectangular metal ground, and are in a fitted state; the thirteenth rectangular metal ground is located on the left side of the twelfth rectangular metal ground, the length of the thirteenth rectangular metal ground is along the front-to-back direction, the width is along the left-to-right direction, and the thickness is along the up-down direction, the left end face of the thirteenth rectangular metal ground is located on the right side of the right end face of the third rectangular patch, and there is a distance between the two, the front end face of the thirteenth rectangular metal ground and the front end face of the twelfth rectangular metal ground are located in the same plane, the rear end face of the thirteenth rectangular metal ground is connected to the front end face of the fifth rectangular metal ground, and the two are in a fitted state, the right end face of the thirteenth rectangular metal ground and the twelfth rectangular metal ground The left end faces of the first right-angled trapezoidal metal ground are connected, and the two are in a fitted state; the first right-angled trapezoidal metal ground is located on the right side of the fourth rectangular metal ground, the upper base and the lower base of the first right-angled trapezoidal metal ground both extend in the front-to-back direction, and its lower base is located on the left side of its upper base, and its oblique waist is located on the front side of its right-angled waist, the lower base of the first right-angled trapezoidal metal ground is connected to the right end face of the fourth rectangular metal ground, and are in a fitted state, the right-angled side of the first right-angled trapezoidal metal ground and the rear end face of the dielectric substrate are located in the same plane, the upper base of the first right-angled trapezoidal metal ground is located on the left side of the left end face of the second rectangular patch, and there is a distance between the two, and the length of the lower base of the first right-angled trapezoidal metal ground is equal to the length of the fourth rectangular metal ground;The second right-angled trapezoidal metal ground is located on the left side of the fifth rectangular metal ground and on the right side of the second rectangular patch. The plane that makes the second rectangular patch bilaterally symmetrical is called the third symmetry plane. The first right-angled trapezoidal metal ground and the second right-angled trapezoidal metal ground are bilaterally symmetrical about the third symmetry plane. ;

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