Polarization stable ultra-wideband energy selective surface with hexagonal structure

Abstract

The invention discloses a polarization-stabilized ultra-wideband energy selective surface with a hexagonal structure, which belongs to the technical field of protective energy selective surfaces and structurally comprises a top-layer metal structure unit and a bottom-layer dielectric substrate. The top layer metal structure unit is composed of a slotted hexagonal metal strip structure and a PIN diode. When high-power electromagnetic waves enter the structure, the PIN diode is conducted and is equivalent to a resistor, the shielding effectiveness reaches more than 25dB in the range of 0-10GHz, the shielding effectiveness reaches more than 15dB in the range of 0-20GHz, and the shielding effectiveness reaches more than 10dB in the range of 0-30GHz. When low-power electromagnetic waves enter the structure, the PIN diode is disconnected and is equivalent to a capacitor, wave transmission is achieved within the range of 16.8-22.6 GHz, and the transmission coefficient is-3dB or above. According to the structure, the ultra-wideband protection function is realized. Besides, a simulation result shows that when TM waves or TE waves enter the structure, S parameter curves are basically consistent, the polarization stability of the structure is proved, and the structure has a relatively high application value for an electromagnetic protection technology.

Description

Technical Field

[0001] The invention belongs to the technical field of protective energy selective surfaces, and in particular relates to a polarization-stable ultra-wideband energy selective surface with a hexagonal structure. Background Art

[0002] Energy Selective Surface (ESS) can automatically adjust its transmission characteristics for electromagnetic waves according to the energy of electromagnetic waves. When the energy of electromagnetic waves is less than the safety threshold, they can pass smoothly, and when they are greater than the safety threshold, they are automatically shielded. By using ESS technology, electromagnetic wave energy can be more effectively protected, thereby protecting the function of electromagnetic materials when facing high-power microwave radiation. This technology not only has great scientific value, but also has broad application prospects.

[0003] As the research on HPM (High Power Microwave) technology is in full swing, its frequency band is getting wider and wider, its power is getting stronger and stronger, and its importance in electronic countermeasures is getting higher and higher. Correspondingly, the importance of electromagnetic protection technology is becoming more and more known. In recent years, ESS has aroused strong interest among researchers due to its application in HPM protection. ESS is an electromagnetic material that can adaptively adjust its wave transmission and reflection characteristics according to the energy of external electromagnetic signals, and has good electromagnetic compatibility and protection effect. However, so far, there are still some problems in the research of ESS, such as the narrow protection frequency band, insufficient insertion loss IL and shielding effectiveness SE. Summary of the invention

[0004] In view of the above defects in the prior art, the main problem solved by the present invention is to achieve ultra-wideband protection of ESS while having polarization stability characteristics. In order to achieve the above object, the present invention provides a polarization-stable ultra-wideband energy selective surface with a hexagonal structure.

[0005] The present invention is achieved in that:

[0006] The present invention adopts the following technical solutions to solve the above technical problems:

[0007] The polarization-stable ultra-wideband energy selective surface with a hexagonal structure of the present invention is characterized in that the structure comprises from top to bottom: a top metal structure unit and a bottom dielectric substrate. The top metal structure unit is composed of a slotted hexagonal metal strip structure and a PIN diode.

[0008] Furthermore, the outer side length of the slotted hexagonal structure of the top metal structure unit is 3 mm, the inner side length is 1.5 mm, and the slotted gap width (the placement interval of the PIN diode) is 0.433 mm.

[0009] Furthermore, the dielectric substrates are all made of F4B265, with a relative dielectric constant of 2.65 and a loss tangent of 0.001, and the metal structural unit material is copper with good conductivity and stable properties.

[0010] Furthermore, the PIN diode used is model MA4FCP200, which is equivalent to a capacitor of 0.02 pF when the diode is disconnected and a resistor of 2.8 Ω when the diode is turned on.

[0011] Furthermore, the period of the dielectric substrate is 7.5 mm, and the thickness of the dielectric substrate is 1 mm.

[0012] The beneficial effects of the present invention compared with the prior art are:

[0013] 1. The present invention realizes the function of ultra-wideband protection of ESS.

[0014] 2. The insertion loss IL and shielding effectiveness SE of the ESS of the present invention are good. When a high-power electromagnetic wave is incident on the structure, the PIN diode is turned on and is equivalent to a resistor. In the range of 0-10GHz, the shielding effectiveness reaches more than 25dB, in the range of 0-20GHz, the shielding effectiveness reaches more than 15dB, and in the range of 0-30GHz, the shielding effectiveness reaches more than 10dB; when a low-power electromagnetic wave is incident on the structure, the PIN diode is disconnected and is equivalent to a capacitor, and wave transmission is achieved in the range of 16.8-22.6GHz, and the transmission coefficient is above -3dB. The data of the present invention show that the structure realizes the function of ultra-wideband protection. In addition, the simulation results show that when a TM wave or a TE wave is incident on the structure, the S parameter curve is basically the same, which proves the polarization stability of the structure and has great application value for electromagnetic protection technology.

[0015] 3. The structure of the present invention has polarization stability characteristics.

[0016] 4. The structure of the present invention is easy to implement and convenient for processing and testing of real objects. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A side view of a unit structure of an energy selection surface of the present invention;

[0018] Figure 2 A top view of a unit structure of an energy selective surface of the present invention;

[0019] Figure 3 The insertion loss IL of the energy selective surface of the present invention under low-power TM wave incidence;

[0020] Figure 4 The insertion loss IL of the energy selective surface of the present invention under low-power TE wave incidence;

[0021] Figure 5 The shielding effectiveness SE of the energy selection surface under high-power TM wave incidence of the present invention;

[0022] Figure 6 The shielding effectiveness SE of the surface under high-power TE wave incidence is selected for the energy of the present invention. DETAILED DESCRIPTION

[0023] In order to more clearly explain the purpose, technical solutions and advantages of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0024] like Figures 1-2 As shown, they are the side view and top view of the structure of the present invention, respectively. The structure has two layers from top to bottom; the top layer is a metal structure unit and the bottom layer is a dielectric substrate. The top metal structure unit is composed of a slotted hexagonal metal strip structure and a PIN diode. The PIN diode on the top layer is turned on when a high-power electromagnetic wave is incident, which is equivalent to a resistor and provides an ultra-wide shielding band. When a low-power electromagnetic wave is incident, the PIN diode is disconnected and is equivalent to a capacitor, which provides a wave-transmitting band in the range of 16.8-22.6GHz.

[0025] The top metal unit material of the structure is copper with good conductivity and stable properties. The dielectric substrate is F4B265 with a relative dielectric constant of 2.65 and a loss tangent of 0.001. The top metal unit is printed on the dielectric substrate.

[0026] The polarization-stable ultra-wideband energy selective surface with a hexagonal structure implemented by the present invention adopts a full-wave simulation method.

[0027] Figure 3 and Figure 4 They are respectively the insertion loss IL of the energy selective surface under low-power TM wave and low-power TE wave incidence of the present invention. Figure 5 and Figure 6 They are respectively the shielding effectiveness SE of the energy selective surface under high-power TM wave and high-power TE wave incidence of the present invention.

[0028] The above results show that when high-power electromagnetic waves are incident on the structure, the PIN diode is turned on and is equivalent to a resistor. In the range of 0-10GHz, the shielding effectiveness reaches more than 25dB, in the range of 0-20GHz, the shielding effectiveness reaches more than 15dB, and in the range of 0-30GHz, the shielding effectiveness reaches more than 10dB; when low-power electromagnetic waves are incident on the structure, the PIN diode is disconnected and is equivalent to a capacitor. Waves are transmitted in the range of 16.8-22.6GHz, and the transmission coefficient is above -3dB. In addition, the simulation results show that when TM waves or TE waves are incident on the structure, the S parameter curves are basically the same, which proves the polarization stability of the structure and has great application value for electromagnetic protection technology.

[0029] The above is only a preferred embodiment of the present invention and is not intended to limit the present invention. It should be noted that any improvements and modifications made within the spirit and principle of the present invention should be considered within the protection scope of the present invention.

Claims

1. A polarization-stable ultra-wideband energy selective surface with a hexagonal structure, characterized in that: The structure comprises from top to bottom: a top metal structure unit and a bottom dielectric substrate; the top metal structure unit comprises a slotted hexagonal metal strip structure and a PIN diode.

2. The polarization-stable ultra-wideband energy selective surface with a hexagonal structure according to claim 1, characterized in that: The outer side length of the slotted hexagonal structure of the top metal structure unit is 3 mm, the inner side length is 1.5 mm, and the slotted gap width is 0.433 mm; the gap width is the placement interval of the PIN diode.

3. The polarization-stable ultra-wideband energy selective surface with a hexagonal structure according to claim 1, characterized in that: The PIN diode of the top metal structure unit is turned on when a high-power electromagnetic wave is incident, which is equivalent to a resistor, providing an ultra-wide shielding band of 0-30GHz. When a low-power electromagnetic wave is incident, the PIN diode is disconnected, which is equivalent to a capacitor, providing a wave-transmitting band in the range of 16.8-22.6GHz.

4. The polarization-stable ultra-wideband energy selective surface with a hexagonal structure according to claim 1, characterized in that: The material of the top metal structural unit is copper; the dielectric substrate is F4B265, with a relative dielectric constant of 2.65 and a loss tangent of 0.

001. The top metal unit is printed on the dielectric substrate.

5. The polarization-stable ultra-wideband energy selective surface with a hexagonal structure according to claim 1, characterized in that: The model of the PIN diode used is MA4FCP200. When the diode is disconnected, it is equivalent to a capacitor of 0.02 pF, and when the diode is turned on, it is equivalent to a resistor of 2.8 Ω.

6. The polarization-stable ultra-wideband energy selective surface with a hexagonal structure according to claim 1, characterized in that: The dielectric substrate has a period of 7.5 mm and a thickness of 1 mm.

Images