Wafer cooling treatment device and method and semiconductor process equipment

Abstract

The invention provides a wafer cooling treatment device and method and semiconductor process equipment. The device comprises a load lock chamber for placing a wafer to be cooled, and an air inlet and an exhaust valve which are arranged on the load lock chamber, wherein the air inlet is connected with an external cooling air source and is used for spraying cooling air into the load lock chamber so as to cool a wafer; when the air pressure in the load lock chamber is larger than a first preset value, the exhaust valve is opened and discharges cooling gas, and when the air pressure in the load lock chamber is smaller than a second preset value, the exhaust valve is closed so that the air pressure in the load lock chamber can be kept within a preset range. According to the invention, the stability of the air pressure in the load lock chamber can be maintained in the wafer cooling process.

Description

Technical Field

[0001] The present invention relates to the technical field of chemical vapor deposition, and more specifically, to a wafer cooling processing device, method and semiconductor process equipment. Background Art

[0002] Chemical Vapor Deposition (CVD for short) mainly refers to a method of generating a thin film by chemical reaction on the surface of a substrate using one or several gaseous compounds or elements containing thin film elements. It is the most widely used technology in the semiconductor industry for depositing various materials, including a wide range of insulating materials, most metal materials and metal alloy materials.

[0003] In the existing chemical vapor deposition process, after being processed in the reaction chamber, the wafer in a high-temperature state needs to be cooled, and this cooling process is usually completed in the load cooling chamber. However, the current cooling scheme requires introducing cooling gas into the cooling chamber, resulting in a pressure difference between the cooling chamber and the front-end processing module connected to it. When releasing the pressure through a valve, due to the existence of the pressure difference, the wafer will shake, which not only poses a risk of wafer damage, but also requires waiting for the wafer to stabilize before transfer. At the same time, combined with the pressure release delay, it will also lead to a reduction in equipment productivity.

[0004] Therefore, there is an urgent need for a wafer cooling adjustment device that can effectively control the air pressure state in the cooling chamber during the cooling process of the wafer to ensure the stability of the wafer and the productivity of the equipment. Summary of the Invention

[0005] In view of the above problems, the purpose of the present invention is to provide a wafer cooling processing device, method and semiconductor process equipment to solve the problems that the existing wafer is prone to shaking under the action of the pressure difference between the cooling chamber and the front-end processing module during the cooling process, and the pressure release requires a certain amount of time, resulting in a reduction in equipment productivity.

[0006] The wafer cooling processing device provided by the present invention includes a load lock chamber for placing the wafer to be cooled, and an air inlet and an exhaust valve provided on the load lock chamber; wherein, the air inlet is connected to an external cooling gas source and is used to spray the cooling gas into the load lock chamber to cool the wafer; when the air pressure in the load lock chamber is greater than the first preset value, the exhaust valve opens and discharges the cooling gas, and when the air pressure in the load lock chamber is less than the second preset value, the exhaust valve closes to keep the air pressure in the load lock chamber within a preset range.

[0007] In addition, an alternative technical solution is that the rear end of the load lock chamber is connected to the equipment front end module through a gate valve; wherein, the gate valve is opened when the air pressure in the load lock chamber is maintained within a preset range, so as to transfer the cooled wafer to the equipment front end module.

[0008] In addition, an alternative technical solution is that a positive pressure state within a predetermined pressure difference range is always maintained between the load lock chamber and the equipment front end module.

[0009] In addition, an alternative technical solution is that the predetermined pressure difference range is 0 to 50 torr; the pressure range within the equipment front end module is 780 torr to 790 torr; the preset range is 800 torr to 830 torr.

[0010] In addition, an alternative technical solution is that the front end of the load lock chamber is connected to the reaction chamber; wherein, after being processed by the reaction chamber, the wafer is transferred to the load lock chamber for cooling treatment.

[0011] In addition, an alternative technical solution is that a safety valve is further provided on the load lock chamber; wherein, the safety valve is used to open when the air pressure in the load lock chamber is greater than a third preset value, so as to exhaust the load lock chamber.

[0012] In addition, an alternative technical solution is that the safety valve is a one-way valve that conducts outward from the load lock chamber.

[0013] In addition, an alternative technical solution is that the cooling gas includes at least one of N2, Ar, He, Ne, and Xe.

[0014] In addition, an alternative technical solution is that at least one exhaust valve is provided.

[0015] On the other hand, the present invention further provides a semiconductor process equipment, including a reaction chamber, the wafer cooling treatment device connected to the reaction chamber as described above, and an equipment front end module connected to the wafer cooling treatment device; wherein, after being processed by the reaction chamber, the wafer is cooled by the wafer cooling treatment device and enters the equipment front end module after cooling.

[0016] In addition, an alternative technical solution is that when the wafer is cooled by the wafer cooling treatment device, the air pressure in the load lock chamber is maintained within a preset range.

[0017] On the other hand, the present invention also provides a method for wafer cooling treatment, including: placing a wafer to be cooled in a load lock chamber, and injecting a cooling gas into the load lock chamber through an air inlet to cool the wafer; when the air pressure in the load lock chamber is greater than a first preset value, opening an exhaust valve to discharge the cooling gas, and when the air pressure in the load lock chamber is less than a second preset value, closing the exhaust valve to maintain the air pressure in the load lock chamber within a preset range; wherein, the step of cooling the wafer to be cooled is carried out simultaneously with the step of maintaining the air pressure in the load lock chamber within a preset range.

[0018] By using the above wafer cooling treatment device, method and semiconductor process equipment, an exhaust valve is provided on the load lock chamber. When external cooling gas enters the load lock chamber to cool the wafer to be cooled, as the cooling gas is continuously injected, the pressure in the load lock chamber will also continuously increase. At this time, when the air pressure in the load lock chamber is greater than the first preset value, the exhaust valve will open and discharge the cooling gas, and when the air pressure in the load lock chamber is less than the second preset value, the exhaust valve will close, so as to maintain the air pressure in the load lock chamber within a stable preset range. This can not only control the pressure difference between the load lock chamber and the equipment front-end module, prevent the wafer from shaking, but also dynamically adjust the air pressure during the cooling process, avoid pressure release delay, thereby ensuring the effective production capacity of the equipment and improving the problem of production capacity decline.

[0019] To achieve the above and related purposes, one or more aspects of the present invention include the features described in detail later. The following description and the accompanying drawings illustrate certain exemplary aspects of the present invention in detail. However, these aspects only indicate some of the various ways in which the principles of the present invention can be used. In addition, the present invention is intended to include all these aspects and their equivalents. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] By referring to the following description in conjunction with the accompanying drawings, and with a more comprehensive understanding of the present invention, other objects and results of the present invention will become more apparent and easier to understand. In the drawings:

[0021] Figure 1 is a top sectional view of a wafer cooling treatment device according to an embodiment of the present invention;

[0022] Figure 2 is a side sectional view of a wafer cooling treatment device according to an embodiment of the present invention.

[0023] The reference signs in the drawings are as follows:

[0024] 1: Equipment front-end module;

[0025] 2: Safety valve;

[0026] 3: Load lock chamber;

[0027] 4: Gate valve;

[0028] 5: Exhaust valve;

[0029] 6: Intake port;

[0030] 7: Wafer.

[0031] Like reference numerals indicate similar or corresponding features or functions in all the drawings. Detailed implementation manners

[0032] Next, with reference to the drawings of one or more embodiments of the present invention, a detailed description will be given of one or more embodiments of the present invention. Obviously, these one or more embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative labor modifications also fall within the scope of protection of the present invention.

[0033] The terms used in the following embodiments are only for the purpose of illustrating or explaining specific embodiments, and are not intended to limit the scope of protection of the present invention. In addition, the singular forms used in the present invention, such as "a", "an", "the", "above-mentioned", "this", and "this one", are intended to include plural forms such as "one or more", unless there is a clear contrary indication in the context. It should also be understood that in the embodiments of the present invention, when using terms such as "one or more", "at least one", and "more than one", it is intended to include the cases of one, two, and at least three.

[0034] In addition, when using terms such as "in one embodiment", "in some embodiments", and "in one or more embodiments" in the specification of the present invention for explanation, it is intended that one or more embodiments of the present invention may include specific technical features described in conjunction with this embodiment. Therefore, the "in one embodiment", "in some embodiments", and "in one or more embodiments" that appear in different parts of this specification do not necessarily refer to the same embodiment, but may refer to the same embodiment or different embodiments, unless the specific technical features described in these embodiments cannot be used alone or combined.

[0035] In addition, in the present invention, when an element is described as "comprising", "including", or "having" another element, it is intended to be an open-ended limitation, that is, in addition to including the other element, the one element may further include other elements. When an element is described as "only comprising", "only including", "only having" another element, or "consisting of" another element, it is intended to be a closed-ended limitation, that is, the one element does not include other elements except the other element. However, it should be noted that when the term "formed by another element" is used to illustrate the formation relationship between multiple elements, this term is not intended to be a closed-ended limitation, and it should be considered that the other element forms a part of the one element, and the one element may include other elements except the other element.

[0036] It should be understood that in the following description of the present invention, when sequential terms such as "first", "second", etc. are used to illustrate each element, these sequential terms are only used to distinguish one element from another element, and the terms such as "first" and "second" should not imply meanings such as primary-secondary relationship and sequence relationship. Without departing from the scope of the present invention, the first element may be labeled as the second element, and the second element may also be labeled as the first element.

[0037] In addition, in the present invention, when the positional relationship between more than two elements is described using terms such as "on...", "under...", "between...", etc., it means that one or more other elements may be further provided between the more than two elements, unless terms such as "exactly" and "adjacent to" are used.

[0038] In the following content, one or more embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can clearly and completely understand the present invention. When the description of well-known structures or features will unnecessarily obscure the gist of the present invention, the description of these well-known structures or features will be omitted.

[0039] To solve the problems that in the existing wafer cooling process, the wafer is prone to wobbling under the action of the pressure difference between the cooling chamber and the front-end processing module, and it takes a certain amount of time to release the pressure through the valve, resulting in a reduction in the equipment production capacity (UPEH, the same below). The present invention provides a wafer cooling processing device. An exhaust valve is provided on the load lock chamber (Loadlock Chamber, the same below). When external cooling gas enters the load lock chamber to cool the wafer to be cooled, as the cooling gas is continuously injected, the pressure in the load lock chamber will also continuously increase. At this time, when the air pressure in the load lock chamber is greater than the first preset value, the exhaust valve will open and discharge the cooling gas, and when the air pressure in the load lock chamber is less than the second preset value, the exhaust valve will close. Thus, through the automatic opening and closing of the exhaust valve, it is ensured that the air pressure in the load lock chamber is maintained within a stable preset range. This not only can control the pressure difference between the load lock chamber and the equipment front-end module to prevent the wafer from wobbling under a large pressure difference, but also can dynamically adjust the air pressure during the cooling process, avoiding the time consumed by separate pressure relief, thereby ensuring the effective production capacity of the equipment.

[0040] To describe in detail the wafer cooling processing device, method and the structure of the semiconductor process equipment of the present invention, the following will describe in detail the specific embodiments of the present invention with reference to the accompanying drawings.

[0041] Figure 1 and Figure 2 respectively show the top view cross-sectional schematic structure and the side view cross-sectional schematic structure of the wafer cooling processing device according to the embodiments of the present invention.

[0042] As Figure 1 and Figure 2 jointly shown, the wafer cooling processing device of the embodiments of the present invention includes a load lock chamber 3, an air inlet 6 and an exhaust valve 5 provided on the load lock chamber 3; wherein, the wafer 7 to be cooled is placed in the load lock chamber 3, the air inlet 6 is connected to an external cooling gas source, and the external gas source injects the cooling gas into the load lock chamber 3 through the air inlet 6 to cool the wafer 7. Due to the continuous charging of the cooling gas, the pressure inside the load lock chamber 3 will continuously rise. When the air pressure in the load lock chamber 3 is greater than the first preset value, the exhaust valve 5 opens and discharges the cooling gas, and when the air pressure in the load lock chamber 3 drops to less than the second preset value, the exhaust valve 5 closes, thereby maintaining the air pressure in the load lock chamber within a stable preset range without the need for separate pressure regulation after cooling.

[0043] Among them, the rear end of the load lock chamber 3 is connected to the equipment front-end module 1 through a gate valve (hereinafter the same as the gate valve) 4. Among them, during the cooling process of the wafer 7, the gate valve 4 is opened, and the cooled wafer is transported through the equipment front-end module 1. During this process, since the pressure inside the load lock chamber 3 is within a preset range, in this state, when the gate is opened wide, the pressure difference between the load lock chamber 3 and the equipment front-end module 1 will not be very large, thus avoiding the wafer from shaking.

[0044] In addition, the front end of the load lock chamber 3 is connected to the reaction chamber. Among them, after the wafer 7 is processed in the reaction chamber, the temperature of the wafer 7 is relatively high. At this time, it needs to be transferred to the load lock chamber 3 for cooling treatment and then transferred to the equipment front-end module 1. Therefore, the load lock chamber 3 is mainly a cooling transition chamber for transferring from the reaction chamber to the equipment front-end module 1. The equipment front-end module 1 is equipped with a wafer handling robot installed in the frame. The frame can also be equipped with a fan filter unit and a connection port installed in the front, etc., which can realize the handling and transfer operations of the wafer 7. The load lock chamber 3 can be understood as a chamber for transporting or carrying out a substrate, that is, a wafer or a plastic substrate, from the outside of the semiconductor processing equipment to the inside of the semiconductor processing equipment in a vacuum state for over-treatment.

[0045] In a specific embodiment of the present invention, to ensure the pressure requirement of the wafer 7 during the processing, it is necessary to ensure that a positive pressure state within a predetermined pressure difference range is always maintained between the load lock chamber 3 and the equipment front-end module 1. As an example, in the wafer cooling processing device of the present invention, the pressure range inside the equipment front-end module 1 is 780 torr to 790 torr; the preset range is 800 torr to 830 torr. At this time, the corresponding predetermined pressure difference range is 0 to 50 torr. In this pressure range, after the gate valve 4 is opened, the wafer 7 will not shake. This preset pressure difference range is used to make the air pressure inside the load lock chamber approximately equal or consistent with the air pressure inside the equipment front-end module. At this time, the above first preset value and second preset value can be adjusted in combination with the set preset range. For example, the first preset value can be the upper limit value of the above preset range, the second preset value can be the lower limit value of the above preset range, or the first preset value and the second preset value can also have a predetermined difference (such as ±5 torr, etc.) from the upper limit value and the lower limit value respectively. As long as the first preset value and the second preset value can flexibly control the pressure inside the load lock chamber 3 in combination with the above preset range, among them, the first preset value and the second preset value can be set to be equal. For example, both the first preset value and the second preset value are set to 800 torr.

[0046] Further, a safety valve (Wafer, the same below) 2 can also be provided on the load lock chamber 3. The safety valve 2 is used to open when the air pressure in the load lock chamber 3 is greater than a third preset value, so as to exhaust and reduce the pressure of the load lock chamber 3, playing an auxiliary safety protection role. The third preset value can be set to 850 torr or 860 torr, etc.

[0047] Specifically, in the wafer cooling treatment solution, the safety valve 2 can also be provided to adjust the internal pressure in the load lock chamber 3 only. For example, when cooling gas is introduced into the load lock chamber 3 to cool the wafer 7, a positive pressure of +150 torr will be generated in the load lock chamber 3 relative to the pressure in the front-end equipment module. When the gate valve 4 is opened, due to the pressure difference, the wafer will shake. Therefore, the safety valve 2 can be used for exhaust, and usually an exhaust delay of about 5 s can be given.

[0048] The safety valve 2 is a valve that allows the fluid to flow in only one direction and can only be opened when a certain pressure acts on it, that is, the safety valve 2 is a one-way valve that conducts from the load lock chamber 3 to the outside. Therefore, when the wafer enters the load lock chamber 3 from the reaction chamber, the inside of the load lock chamber 3 changes from a vacuum state to atmospheric pressure. At this time, the wafer can be cooled by the cooling gas. When the pressure in the load lock chamber 3 reaches 850 - 860 torr, the safety valve 2 opens and discharges the cooling gas, and the final pressure of the load lock chamber 3 is maintained at about 950 torr. At this time, if the gate valve 4 is opened, it will cause the wafer to shake, resulting in problems during wafer transportation. Therefore, a 5 s delay time needs to be given to the safety valve 2, so that when the pressure of the load lock chamber 3 is reduced to a certain value, the gate valve 4 is opened and the wafer is transported. This solution can also effectively cool the wafer, but compared with the case of setting an exhaust valve to cool the wafer simultaneously (i.e., the step of discharging the cooling gas) and opening the gate valve while maintaining the pressure value within a preset range (800 - 830 torr), due to the existence of the delay time, the production capacity of the equipment will be reduced to a certain extent.

[0049] It can be seen that in the wafer cooling device of the present invention, at least one exhaust valve 5 and one safety valve 2 can be provided. The specific number can be flexibly set according to the size and pressure requirements of the load lock chamber 3. When multiple exhaust valves or safety valves are provided, the multiple exhaust valves or safety valves are preferably symmetrically distributed on the load lock chamber as much as possible to ensure the efficiency and uniformity of pressure regulation.

[0050] In addition, the cooling gas introduced into the load lock chamber 3 can be an inert gas that is not prone to reaction. The cooling gas can include but is not limited to: N2, Ar, He, Ne, Xe, etc.

[0051] Corresponding to the above wafer cooling processing device, the present invention also provides a semiconductor processing equipment, which includes a reaction chamber, a wafer cooling processing device connected to the reaction chamber, and an equipment front end module 1 connected to the wafer cooling processing device; wherein, after being processed in the reaction chamber, the temperature of the wafer will be relatively high, and it needs to be further cooled by the wafer cooling processing device and then enter the equipment front end module 1 for handling after cooling.

[0052] As a specific example, the semiconductor processing equipment of the present invention may include an electrostatic chuck, a reaction chamber, and a wafer support frame. The electrostatic chuck is connected to the wafer support frame through three lifting pins, and the electrostatic chuck attracts the wafer according to the electrostatic principle; a reaction gas pipeline is connected to the left side of the reaction chamber and is equipped with a pressure gauge, and the tail gas pipeline is connected to the bottom, equipped with a pressure gauge, and is connected to a turbo pump through a throttle valve; a remote plasma source is connected to the top of the reaction chamber, and a cleaning gas pipeline is in the middle. The cleaning gas pipeline passes through the ceramic bell jar and is connected to the gas shower head assembly. The bottom of the wafer support frame is hermetically connected to the reaction chamber. The wafer rotation device consists of a bellows cavity, a motor, and a cylinder. A locking device is fixed to the top of the bellows cavity and is hermetically connected to the reaction chamber. A sealing pipeline and a high-purity nitrogen pipeline are respectively arranged on both sides of the bellows cavity. The motor and the cylinder are both fixed to the bellows cavity by screws. A shaft rod is arranged inside the bellows cavity, and a second transmission wheel is arranged at the bottom of the bellows cavity. The second transmission wheel is welded and fixed to the shaft rod. A first transmission wheel is connected to the transmission end of the motor, and the first transmission wheel and the second transmission wheel are connected by a belt. A sensor and a gas transmission port are arranged on the cylinder.

[0053] In addition, in order to ensure that the reaction gas effectively enters the reaction chamber, before the reaction gas undergoes a chemical reaction to deposit a thin film on the substrate, it flows through a conduit and through a shower plate from a storage container. The shower plate has a top surface and a bottom surface, and includes a plurality of holes extending from the top surface to the bottom surface through the shower plate. The reaction gases of different gases all flow through the shower plate holes before being dispersed onto the substrate. The purpose of the shower plate is to evenly disperse the reaction gas on the substrate surface to promote more uniform thin film deposition. In order to promote film thickness uniformity, these holes of the shower plate usually contract at the outlet end, so that the inlet or gas entry point of the hole is larger than the outlet or gas discharge point. The shower plate can also be used as an electrode in a parallel plate chemical vapor deposition device to excite the gas into plasma in the reaction chamber during wafer processing.

[0054] Among them, the temperature of the wafer after being processed in the reaction chamber is relatively high. Therefore, it needs to be cooled by the wafer cooling processing device and then undergo other handling processes through the equipment front end module 1. Among them, the step of cooling the wafer by the wafer cooling processing device is carried out simultaneously with the step of maintaining the air pressure in the load lock chamber within a preset range to prevent the wafer from shaking when the gate valve is opened and improve the decline of equipment productivity.

[0055] Corresponding to the above wafer cooling processing device, the present invention also provides a wafer cooling processing method, including placing a wafer to be cooled in a load lock chamber, and injecting a cooling gas into the load lock chamber through an air inlet to cool the wafer; when the air pressure in the load lock chamber is greater than a first preset value, opening an exhaust valve to discharge the cooling gas, and when the air pressure in the load lock chamber is less than a second preset value, closing the exhaust valve to maintain the air pressure in the load lock chamber within a preset range; wherein, the step of cooling the wafer to be cooled is carried out simultaneously with the step in the state where the air pressure in the load lock chamber is maintained within the preset range.

[0056] It should be noted that the above semiconductor process equipment is not particularly limited as long as it is equipment for processing wafers. For example, it can be a deposition equipment and / or an etching equipment. The deposition equipment can be, for example, a chemical vapor deposition equipment. The embodiments of the above semiconductor process equipment and the wafer cooling processing method can refer to the description in the embodiments of the wafer cooling processing device, and will not be elaborated here one by one.

[0057] According to the above wafer cooling processing device and semiconductor process equipment, an exhaust valve is provided on the load lock chamber. When an external cooling gas enters the load lock chamber to cool the wafer to be cooled, as the cooling gas is continuously injected, the pressure in the load lock chamber will also continuously increase. At this time, when the air pressure in the load lock chamber is greater than the first preset value, the exhaust valve will open and discharge the cooling gas, and when the air pressure in the load lock chamber is less than the second preset value, the exhaust valve will close, thereby maintaining the air pressure in the load lock chamber within a stable preset range. This can not only control the pressure difference between the load lock chamber and the equipment front end module, prevent the wafer from shaking, but also dynamically adjust the air pressure during the cooling process, avoid pressure discharge delay, and thus ensure the effective production capacity of the equipment.

[0058] As described above, the wafer cooling processing device, method and semiconductor process equipment according to the present invention are described by way of example with reference to the drawings. However, those skilled in the art should understand that various improvements can be made to the above wafer cooling processing device, method and semiconductor process equipment proposed by the present invention without departing from the content of the present invention. Therefore, the protection scope of the present invention should be determined by the content of the appended claims.

Claims

1. A wafer cooling processing device, characterized in that: The invention comprises a load lock chamber for placing wafers to be cooled and an air inlet and an exhaust valve arranged on the load lock chamber; wherein, The air inlet is connected to an external cooling air source and is used to spray cooling gas into the load lock chamber to cool the wafer; When the air pressure in the load lock chamber is greater than a first preset value, the exhaust valve opens and discharges the cooling gas, and when the air pressure in the load lock chamber is less than a second preset value, the exhaust valve closes to keep the air pressure in the load lock chamber within a preset range.

2. The wafer cooling processing device according to claim 1, characterized in that: The rear end of the load lock chamber is connected to the front end module of the equipment through a gate valve; wherein, The gate valve is opened when the air pressure in the load lock chamber is maintained within a preset range to transfer the cooled wafer to the equipment front-end module.

3. The wafer cooling processing device according to claim 1, characterized in that: A positive pressure state within a predetermined pressure difference range is maintained between the load lock chamber and the equipment front-end module.

4. The wafer cooling processing device according to claim 3, characterized in that: The predetermined pressure difference range is 0 to 50 torr; the preset range is 800 torr to 830 torr.

5. The wafer cooling processing device according to claim 1, characterized in that: The front end of the load lock chamber is connected to the reaction chamber; wherein, After being processed in the reaction chamber, the wafer is transferred to the load lock chamber for cooling.

6. The wafer cooling processing device according to claim 1, characterized in that: It also includes a safety valve disposed on the load lock chamber; wherein, The safety valve opens when the air pressure in the load lock chamber is greater than a third preset value to exhaust the load lock chamber.

7. The wafer cooling processing device according to claim 6, characterized in that: The safety valve is a one-way valve that conducts from the load lock chamber to the outside.

8. The wafer cooling processing device according to claim 1, characterized in that: The cooling gas includes at least one of N2, Ar, He, Ne, and Xe.

9. The wafer cooling processing device according to claim 1, characterized in that: At least one exhaust valve is provided.

10. A semiconductor process equipment, characterized in that: It comprises a reaction chamber, a wafer cooling processing device according to any one of claims 1 to 9 connected to the reaction chamber, and a device front-end module connected to the wafer cooling processing device; wherein, After being processed in the reaction chamber, the wafer is cooled by the wafer cooling device and enters the equipment front-end module after being cooled.

11. The semiconductor process equipment according to claim 10, characterized in that: When the wafer is cooled by the wafer cooling processing device, the air pressure in the load lock chamber is maintained within the preset range.

12. A wafer cooling method, characterized in that: include: Placing a wafer to be cooled in a load lock chamber, and injecting cooling gas into the load lock chamber through an air inlet to cool the wafer; When the air pressure in the load lock chamber is greater than a first preset value, the exhaust valve is opened to discharge the cooling gas, and when the air pressure in the load lock chamber is less than a second preset value, the exhaust valve is closed to keep the air pressure in the load lock chamber within a preset range; The step of cooling the wafer to be cooled is performed simultaneously with the step of maintaining the air pressure in the load lock chamber within a preset range.

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