Packaging structure of high-power chip device

Abstract

The invention discloses a packaging structure of a high-power chip device. The packaging structure comprises a base; the ceramic powder ring is embedded in the middle of the base; the high-power chip device is embedded in the middle of the ceramic powder ring; one end of the conductor is connected to the leading-out end of the high-power chip device, and the other end of the conductor penetrates through the base and extends to the outer side; the ventilating cover is fixed on the upper side of the base and covers the ceramic powder ring, the high-power chip device and one end, positioned on the inner side of the base, of the conductor; the heat insulation cover is fixed on the upper side of the base and covers the ventilation cover; the heat insulation cotton is filled between the ventilation cover and the heat insulation cover; according to the invention, the security of the packaging structure can be ensured; and meanwhile, the structure is simple, and miniaturization and lightweight design can be carried out.

Description

Technical Field

[0001] The present invention relates to the technical field of packaging structures, and in particular to a packaging structure of a high-power chip device. Background Art

[0002] In some chip devices, such as zirconium oxide solid electrolyte-based gas sensors, in order to allow the sensitive element to stably catalytically sense at high temperatures, a built-in high-power heater is required to heat the sensitive element to a temperature above 500°C. Due to its own heat conduction, the temperature of the tail lead of this device is about 150°C. This self-heating chip device is limited by high temperatures and is difficult to package. Summary of the invention

[0003] The purpose of the present invention is to overcome the deficiencies in the prior art, provide a packaging structure for a high-power chip device, and solve the technical problem that when the high-power chip device is working, the high heat generated leads to great packaging difficulty.

[0004] To achieve the above object, the present invention is implemented by adopting the following technical solutions:

[0005] The present invention provides a packaging structure of a high-power chip device, comprising:

[0006] Base;

[0007] A ceramic powder ring, embedded in the middle of the base;

[0008] A high-power chip device is embedded in the middle of the ceramic powder ring;

[0009] A conductor, one end of which is connected to the lead-out terminal of the high-power chip device, and the other end of which passes through the base and extends to the outside;

[0010] A breathable cover is fixed to the upper side of the base and covers the ceramic powder ring, the high-power chip device and an end of the conductor located on the inner side of the base;

[0011] A heat-insulating cover, fixed to the upper side of the base and covering the breathable cover;

[0012] The heat-insulating cotton is filled between the breathable cover and the heat-insulating cover.

[0013] Optionally, the base includes:

[0014] A substrate, wherein the heat shield is fixed to an edge of an upper surface of the substrate;

[0015] The boss is arranged in the middle of the upper surface of the substrate; the substrate and the boss are an integrally formed structure; the breathable cover is fixed to the upper edge of the boss;

[0016] A groove is provided in the middle of the upper surface of the boss; the ceramic powder ring is embedded in the inner wall of the groove;

[0017] Through holes are formed on the upper surface of the boss and distributed along the circumference of the groove, and the conductor extends from the through holes through the base to the outside.

[0018] Optionally, a gap is left between the ceramic powder ring and the bottom of the high-power chip device and the bottom of the groove.

[0019] Optionally, the ceramic powder ring, the high-power chip device and the groove are fixedly connected by press-fitting.

[0020] Optionally, the conductor is provided in plurality and distributed along the circumference of the high-power chip device, and each of the conductors comprises:

[0021] A metal nail, comprising a nail head and a nail leg, wherein the nail leg is provided with an insulator and is fixed to the inner wall of the through hole through the insulator, and the nail head is kept close to the side of the high-power chip device;

[0022] A platinum wire has one end connected to the lead-out terminal of the high-power chip device and the other end connected to the nail head.

[0023] Optionally, the platinum wire and the nail head are fixedly connected by laser welding.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] The present invention provides a packaging structure for a high-power chip device, which reduces the heat at the bottom of the high-power chip device and conducts it to a base through a ceramic powder ring, and reduces the heat at the top of the high-power chip device and conducts it to a heat insulation cover through heat insulation cotton, thereby ensuring the safety of the packaging structure; at the same time, the structure is simple and can be miniaturized and lightweight. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a longitudinal cross-sectional view of a packaging structure of a high-power chip device provided by an embodiment of the present invention;

[0027] Figure 2 is a transverse cross-sectional view of a packaging structure of a high-power chip device provided by an embodiment of the present invention;

[0028] Figure 3 is a schematic structural diagram of a high-power chip device provided by an embodiment of the present invention;

[0029] The markings in the figure are:

[0030] 1-base; 11-substrate; 12-boss; 13-groove; 14-through hole; 2-ceramic powder ring; 3-high-power chip device; 4-conductor; 41-platinum wire; 42-metal nail; 43-insulator; 5-breathable cover; 6-thermal insulation cotton; 7-thermal insulation cover. DETAILED DESCRIPTION

[0031] The present invention will be further described below in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and cannot be used to limit the protection scope of the present invention.

[0032] Embodiment 1:

[0033] like Figure 1-2 As shown, an embodiment of the present invention provides a packaging structure of a high-power chip device, including a base 1, a ceramic powder ring 2, a high-power chip device 3, a conductor 4, a breathable cover 5, a heat insulation cover 6 and heat insulation cotton 7.

[0034] The base 1 is usually made of stainless steel, including a substrate 11, a boss 12, a groove 13 and a through hole 14. The substrate 11 and the boss 12 are an integrally formed structure. The groove 13 is opened in the middle of the upper surface of the boss 12, and the through holes 14 are opened on the upper surface of the boss 12 and distributed along the circumference of the groove 13. The ceramic powder ring 2 is embedded in the inner wall of the groove 13, and the high-power chip device 3 is embedded in the middle of the ceramic powder ring 2. The specific connection method can be: the ceramic powder ring 2, the high-power chip device 3 and the groove 13 are fixedly connected by press fitting. The ceramic powder ring 2 is a composite material of glass and ceramic, which can not only achieve the bonding of the high-power chip device 3 and the inner wall of the groove 13, but also has low thermal conductivity.

[0035] A gap is left between the bottom of the ceramic powder ring 2 and the high-power chip device 3 and the bottom of the groove 13 , so that there is no direct contact between the high-power chip device 3 and the base 1 , thereby reducing the heat transferred from the high-power chip device 3 to the base 1 .

[0036] There are multiple conductors 4 and they are distributed along the circumference of the high-power chip device 3. Each conductor 4 includes a metal nail 42 and a platinum wire 41. The metal nail 42 includes a nail head and a nail leg. The nail leg is provided with an insulator 43 and fixed to the inner wall of the through hole 14 through the insulator 43, and the nail head is kept close to the side of the high-power chip device 3. One end of the platinum wire 41 is connected to the lead-out end of the high-power chip device 3, and the other end is connected to the nail head 42. The platinum wire 42 is fixedly connected to the nail head by laser welding. The high-power chip device 3 is electrically connected to the outside through the conductor 4.

[0037] The breathable cover 5 is fixed to the edge of the upper surface of the boss 12, and can cover the ceramic powder ring 2, the high-power chip device 3 and the end of the conductor 4 located on the inner side of the base; the high-power chip device 3 is isolated from the external environment and ventilated. The heat insulation cover 7 is fixed to the edge of the upper surface of the substrate, and can cover the breathable cover; the heat insulation cotton 6 is filled between the breathable cover 5 and the heat insulation cover 7 to further reduce the temperature of the heat insulation cover.

[0038] like Figure 3As shown, the embodiment of the present invention provides a high-power chip device. Figure 3 It can be seen from the figure that the heat generation area of ​​the high-power chip device is located at the head. Therefore, if the high-power chip device is packaged, its tail needs to be fixed in a ceramic powder ring to reduce heat transfer.

[0039] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A packaging structure for a high-power chip device, It is characterized in that include: Base; A ceramic powder ring, embedded in the middle of the base; A high-power chip device is embedded in the middle of the ceramic powder ring; A conductor, one end of which is connected to the lead-out terminal of the high-power chip device, and the other end of which passes through the base and extends to the outside; A breathable cover is fixed to the upper side of the base and covers the ceramic powder ring, the high-power chip device and an end of the conductor located on the inner side of the base; A heat-insulating cover, fixed to the upper side of the base and covering the breathable cover; The heat-insulating cotton is filled between the breathable cover and the heat-insulating cover.

2. The packaging structure of the high-power chip device according to claim 1, It is characterized in that The base comprises: A substrate, wherein the heat shield is fixed to an edge of an upper surface of the substrate; The boss is arranged in the middle of the upper surface of the substrate; the substrate and the boss are an integrally formed structure; the breathable cover is fixed to the upper edge of the boss; A groove is provided in the middle of the upper surface of the boss; the ceramic powder ring is embedded in the inner wall of the groove; Through holes are formed on the upper surface of the boss and distributed along the circumference of the groove, and the conductor extends from the through holes through the base to the outside.

3. The packaging structure of the high-power chip device according to claim 2, It is characterized in that A gap is left between the ceramic powder ring and the bottom of the high-power chip device and the bottom of the groove.

4. The packaging structure of the high-power chip device according to claim 2, It is characterized in that The ceramic powder ring, the high-power chip device and the groove are fixedly connected by press-fitting.

5. The packaging structure of the high-power chip device according to claim 2, It is characterized in that The conductors are provided in plurality and distributed along the circumference of the high-power chip device, and each of the conductors comprises: A metal nail, comprising a nail head and a nail leg, wherein the nail leg is provided with an insulator and is fixed to the inner wall of the through hole through the insulator, and the nail head is kept close to the side of the high-power chip device; A platinum wire has one end connected to the lead-out terminal of the high-power chip device and the other end connected to the nail head.

6. The packaging structure of the high-power chip device according to claim 1, It is characterized in that The platinum wire and the nail head are fixedly connected by laser welding.

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