Single-sided light-emitting LED chip, manufacturing method thereof and display device

Abstract

The invention provides a single-sided light-emitting LED chip, a manufacturing method thereof and a display device, the single-sided light-emitting LED chip comprises a second contact electrode and an epitaxial laminated layer which are arranged on one side of a substrate, the surface of one side, facing the epitaxial laminated layer, of the second contact electrode is provided with an exposed first table board, the first table board surrounds the epitaxial laminated layer, and the first table board is provided with a second table board; the surface of one side, deviating from the substrate, of the epitaxial laminated layer is a light-emitting table surface; the first contact electrode covers the side wall of the epitaxial laminated layer and the first table top in a manner of spacing an insulating layer, and a light blocking layer made of an insulating material is arranged on a part of the first table top, is used for covering the side wall of the insulating layer and is jointed with the first contact electrode; wherein the light blocking structure formed by the light blocking layer, the first contact electrode and the second contact electrode can avoid the occurrence of stray light caused by light emitting from the side surface of the LED chip and an optical waveguide effect, so that the light emitted by the LED chip is emitted from the light-emitting table surface, and the single-surface light emitting of the LED chip is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of light emitting diodes, and more specifically, to a single-sided light emitting LED chip and a manufacturing method thereof, and a display device. Background Art

[0002] In addition to being widely used in lighting, LED (Light Emitting Diode) also has a huge market in the fields of display and indication. Traditional LED chips mainly focus on parameters such as brightness and light efficiency. Although the light emitting morphology is also concerned in high-end display applications, most of the existing chips are 5-sided light sources. Although thin-film chips have a good Lambertian light emitting morphology, which is relatively close to single-sided light emission, in fact, considering that the thickness of the light-emitting layer is 3-10 microns, there is still a phenomenon of side light emission, and it is actually still 5-sided light emission. At the same time, transparent materials are used as substrates or insulating materials in most chip processes. Light is easily conducted inside the transparent material and emitted in areas outside the light-emitting area, forming stray light.

[0003] In addition, previous display and indication applications often integrate different numbers of LED chips in the package and module end. This implementation method is often large in size, low in integration, and has a strong sense of graininess in the display or indication effect, with obvious stray light. In applications close to the eye or with high integration requirements, the display effect is often poor, especially in some special application areas, such as gun sights, etc., the existing integrated light sources or traditional 5-sided light sources cannot meet the volume and light source clarity requirements. Summary of the invention

[0004] In view of this, the present invention provides a single-sided light-emitting LED chip and a manufacturing method thereof, and a display device, wherein the LED chip has single-sided light emission and no stray light crosstalk, and has a better display effect, so as to solve the problems of side light emission and stray light in the LED chip in the prior art, resulting in poor display effect in the application field near the eye or with high integration requirements, and unable to meet the requirements of volume and light source clarity.

[0005] To achieve the above purpose, the technical solution adopted by the present invention is as follows:

[0006] A single-sided light-emitting LED chip, characterized by comprising:

[0007] substrate;

[0008] A second contact electrode and an epitaxial stack are sequentially arranged on one side of the substrate, wherein the epitaxial stack at least comprises: a second-type semiconductor layer, an active region and a first-type semiconductor layer sequentially stacked on the second contact electrode from bottom to top, and the second contact electrode is electrically connected to the second-type semiconductor layer; wherein a surface of the second contact electrode facing the epitaxial stack has an exposed first mesa, the first mesa surrounds the epitaxial stack, and a surface of the epitaxial stack facing away from the substrate is a light-emitting mesa;

[0009] an insulating layer covering the sidewalls of the epitaxial stack and extending to a portion of the surface of the first mesa;

[0010] A first contact electrode, which covers the sidewall of the epitaxial stack and the first mesa by separating the insulating layer, and extends to a portion of the light-emitting mesa to form an electrical connection with the first-type semiconductor layer;

[0011] A light-blocking layer made of an insulating material is provided on part of the first mesa, which is used to cover the side wall of the insulating layer and is connected to the first contact electrode;

[0012] The light blocking layer, the first contact electrode and the second contact electrode form a light blocking structure.

[0013] Preferably, the light blocking layer covers the side wall of the insulating layer located on the first mesa, and the first contact electrode covers at least a portion of the side wall of the insulating layer close to the light emitting mesa.

[0014] Preferably, the second contact electrode comprises a reflective metal material.

[0015] Preferably, the first contact electrode comprises a reflective metal material, and the light blocking layer comprises a reflective insulating material.

[0016] Preferably, the first contact electrode comprises a light-absorbing metal material, and the light-blocking layer comprises a light-absorbing insulating material.

[0017] Preferably, the light blocking layer is a single-layer insulating layer or a multi-layer insulating layer.

[0018] Preferably, the light blocking layer extends to a portion of the surface of the first contact electrode.

[0019] Preferably, the light-blocking layer extends to a portion of the surface of the insulating layer, and the first contact electrode covers an upper surface of the light-blocking layer.

[0020] Preferably, contact interfaces between the light blocking layer and the first contact electrode, the second contact electrode, and the insulating layer all have roughened surfaces.

[0021] The present invention also provides a method for manufacturing a single-sided light-emitting LED chip, which is characterized by comprising the following steps:

[0022] S01, providing a growth substrate;

[0023] S02, growing an epitaxial stack on the growth substrate; the epitaxial stack at least comprising: a first-type semiconductor layer, an active region, and a second-type semiconductor layer sequentially stacked along a growth direction;

[0024] S03, depositing a whole surface of a second contact electrode on the surface of the second-type semiconductor layer;

[0025] S04, bonding a surface of the second contact electrode facing away from the epitaxial stack to a substrate through a bonding process;

[0026] S05, peeling off the growth substrate;

[0027] S06, etching the epitaxial stack so that a surface of the second contact electrode facing the epitaxial stack has an exposed first mesa, the first mesa surrounds the epitaxial stack, and a surface of the epitaxial stack facing away from the substrate is a light-emitting mesa;

[0028] S07, depositing an insulating layer to cover the sidewalls of the epitaxial stack and extend to a portion of the surface of the first mesa;

[0029] S08, manufacturing a first contact electrode, so that it covers the side wall of the epitaxial stack and the first mesa by separating the insulating layer, and extends to a part of the light-emitting mesa to form a connection with the first-type semiconductor layer;

[0030] S09, forming a light-blocking layer of an insulating material on the exposed first mesa, so as to cover the sidewall of the insulating layer and be bonded to the first contact electrode;

[0031] The light blocking layer, the first contact electrode and the second contact electrode form a light blocking structure.

[0032] The present invention further provides a display device, characterized in that it comprises: a single-sided light-emitting LED chip as described in any one of the above items, or a single-sided light-emitting LED chip prepared by using any one of the methods described in the above items.

[0033] Through the above technical scheme, it can be known that a single-sided light-emitting LED chip provided by the present invention comprises: a second contact electrode and an epitaxial stack arranged in sequence on one side of a substrate, wherein a surface of the second contact electrode facing the epitaxial stack has an exposed first table surface, the first table surface surrounds the epitaxial stack, and a surface of the epitaxial stack facing away from the substrate is a light-emitting table surface; a first contact electrode, which covers the side wall and the first table surface of the epitaxial stack by means of an insulating layer, and a light-blocking layer of insulating material is provided on part of the first table surface, which is used to cover the side wall of the insulating layer and is bonded to the first contact electrode, and the second contact electrode can block the light from the LED chip substrate, and the first contact electrode combined with the light-blocking layer can block the light from the side wall of the epitaxial stack and the light transmitted to the insulating layer, so that the light-blocking structure composed of the light-blocking layer, the first contact electrode and the second contact electrode can avoid the side light emission of the LED chip and the stray light caused by the optical waveguide effect, so that the light emitted by the LED chip is emitted from the light-emitting table surface to realize the single-sided light emission of the LED chip.

[0034] Furthermore, by configuring the first contact electrode to include a reflective metal material and the light blocking layer to include a reflective insulating material, light propagating laterally in the epitaxial stack can be reflected so that the light is ultimately emitted from the light-emitting table, thereby improving the light extraction efficiency of the LED chip.

[0035] Furthermore, according to actual needs, by setting the first contact electrode to include a light-absorbing metal material and the light-blocking layer to include a light-absorbing insulating material, not only can light leakage be reduced but also light propagating laterally in the epitaxial stack can be absorbed without reflection, so that the light is emitted vertically from the light-emitting table, thereby obtaining a better light distribution curve.

[0036] Furthermore, by extending the light blocking layer to part of the surface of the first contact electrode, the contact area between the light blocking layer and the first contact electrode is increased, thereby improving the adhesion between the light blocking layer and the first contact electrode and preventing the light blocking layer from falling off and causing light leakage from the side of the LED chip.

[0037] Furthermore, by setting a light-blocking layer extending to part of the surface of the insulating layer, and the first contact electrode covering the upper surface of the light-blocking layer, the adhesion between the light-blocking layer, the insulating layer and the first contact electrode can be improved, thereby preventing the light-blocking layer from falling off and causing light leakage from the side of the LED chip.

[0038] Furthermore, by providing a roughened surface at the contact interface between the light blocking layer and the first contact electrode, the second contact electrode and the insulating layer, the adhesion between the light blocking layer and the insulating layer, the first contact electrode and the second contact electrode can be improved, thereby preventing the light blocking layer from falling off and causing light leakage from the side of the LED chip.

[0039] The present invention provides a method for manufacturing a single-sided light-emitting LED chip, which, while achieving the beneficial effects of the above-mentioned single-sided light-emitting LED chip, has a simple and convenient manufacturing process and is easy to produce.

[0040] A display device provided by the present invention comprises the above-mentioned single-sided light-emitting LED chip, or a single-sided light-emitting LED chip prepared by the above-mentioned method. The LED chip has single-sided light emission and no stray light crosstalk, and has a better display effect to meet the requirements of volume and light source clarity and in application fields near the eye or with high integration requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0042] Figure 1 A schematic diagram of the structure of a single-sided light-emitting LED chip provided by an embodiment of the present invention;

[0043] Figure 2 A schematic diagram of the structure of another single-sided light-emitting LED chip provided by an embodiment of the present invention;

[0044] Figure 3 A flow chart of a method for manufacturing a single-sided light-emitting LED chip provided by an embodiment of the present invention;

[0045] Figures 4 to 12 for Figure 3 Schematic diagram of the structure corresponding to each step of the manufacturing method shown.

[0046] Explanation of symbols in the figure:

[0047] 01. Growth substrate; A. First table;

[0048] 1. Substrate; 2. Epitaxial stack; 21. First type semiconductor layer; 22. Active region; 23. Second type semiconductor layer; 24. Light emitting table; 3. First contact electrode; 31. First electrode pad; 4. Second contact electrode; 5. Insulating layer; 6. Light blocking layer. DETAILED DESCRIPTION

[0049] To make the content of the present invention clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0050] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0051] Secondly, the present application is described in detail with reference to the schematic diagram. When describing the embodiments of the present application in detail, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present application. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0052] This embodiment provides a single-sided light-emitting LED chip, such as Figure 1 As shown, the single-sided emitting LED chip includes:

[0053] substrate1;

[0054] A second contact electrode 4 and an epitaxial stack 2 are sequentially arranged on one side of the substrate 1, wherein the epitaxial stack 2 at least comprises: a second-type semiconductor layer 23, an active region 22 and a first-type semiconductor layer 21 sequentially stacked on the second contact electrode 4 from bottom to top, and the second contact electrode 4 is electrically connected to the second-type semiconductor layer 23; wherein a surface of the second contact electrode 4 facing the epitaxial stack 2 has an exposed first mesa A (not shown in the figure), the first mesa A surrounds the epitaxial stack 2, and a surface of the epitaxial stack 2 facing away from the substrate 1 is a light-emitting mesa 24;

[0055] an insulating layer 5 covering the sidewalls of the epitaxial stack 2 and extending to a portion of the surface of the first mesa A;

[0056] A first contact electrode 3, which covers the sidewalls of the epitaxial stack 2 and the first mesa A by means of an insulating layer 5, and extends to a portion of the light-emitting mesa 24 to form an electrical connection with the first-type semiconductor layer 21;

[0057] A light blocking layer 6 made of insulating material is provided on a portion of the first mesa A, for covering the side wall of the insulating layer 5 and bonding with the first contact electrode 3;

[0058] The light blocking layer 6 , the first contact electrode 3 and the second contact electrode 4 constitute a light blocking structure.

[0059] The specific number of layers and structure of the epitaxial stack 2 are not limited in this embodiment. The epitaxial stack 2 at least includes a first-type semiconductor layer 21, an active area 22, and a second-type semiconductor layer 23. In other embodiments, in order to improve lattice matching, the epitaxial stack 2 of the LED chip may also include a superlattice structure, etc.

[0060] It should be noted that the present embodiment does not limit the specific doping types of the first-type semiconductor layer 21 and the second-type semiconductor layer 23. The doping types of the first-type semiconductor layer 21 and the second-type semiconductor layer 23 are opposite. The first-type semiconductor layer 21 can be a P-type semiconductor layer or an N-type semiconductor layer. The materials of the N-type semiconductor layer and the P-type semiconductor layer can be GaN or AlGaN.

[0061] Optionally, in this embodiment, the second contact electrode 4 includes a reflective metal material.

[0062] On the basis of the above embodiments, in one embodiment of the present application, the insulating layer 5 includes but is not limited to one or more of silicon oxide, aluminum oxide, silicon nitride, titanium fluoride, magnesium fluoride, and zirconium oxide.

[0063] Based on the above embodiments, in an embodiment of the present application, the light blocking layer 6 covers the side wall of the insulating layer 5 located on the first mesa A, and the first contact electrode 3 covers at least a portion of the side wall of the insulating layer 5 close to the light emitting mesa 24 .

[0064] In another embodiment of the present invention, the light blocking layer 6 covers the side wall of the insulating layer 5 located on the first table A, and the first contact electrode 3 completely covers the side wall of the insulating layer 5 close to the light-emitting table 24, thereby preventing the light emitted from the light-emitting table 24 from being transmitted to the side wall of the insulating layer 5, thereby reducing the light loss of the LED chip.

[0065] On the basis of the above embodiments, in an embodiment of the present application, a first electrode pad 31 is provided on a portion of the surface of the first contact electrode 3 facing away from the insulating layer 5 .

[0066] On the basis of the above embodiments, in one embodiment of the present application, the light blocking layer 6 is a single-layer insulating layer or a multi-layer insulating layer.

[0067] Optionally, in this embodiment, the multi-layer insulation layer includes a DBR structure.

[0068] It should be noted that in this embodiment, the DBR structure is a periodic structure in which two materials with different refractive indices are alternately stacked in an ABAB manner, wherein the high refractive index layer can be made of Ti 3 O 5 layer, the low refractive index layer can be made of SiO 2and, the number of cycles of the DBR structure alternately stacked is not specifically limited and can be set according to actual needs.

[0069] On the basis of the above embodiments, in one embodiment of the present application, the first contact electrode 3 includes a reflective metal material, and the light blocking layer 6 includes a reflective insulating material.

[0070] Optionally, in this embodiment, the light blocking layer 6 includes but is not limited to one or more of titanium dioxide, aluminum oxide, and white silica gel.

[0071] To further improve the light extraction efficiency of the LED chip, optionally, in this embodiment, the insulating layer 5 includes an insulating dielectric material, and the first contact electrode 3 and the insulating layer 5 form an ODR structure.

[0072] In another embodiment of the present application, the first contact electrode 3 includes a light-absorbing metal material, and the light-blocking layer 6 includes a light-absorbing insulating material.

[0073] Optionally, in this embodiment, the light blocking layer 6 includes but is not limited to one or more of black epoxy resin, black silicone, and carbon black filled polymer.

[0074] On the basis of the above embodiments, in an embodiment of the present application, the light blocking layer 6 extends to a portion of the surface of the first contact electrode 3 .

[0075] In another embodiment of the present invention, the light blocking layer 6 covers the side wall of the first contact electrode 3 located on the first mesa A, and extends to a portion of the upper surface of the first contact electrode 3 .

[0076] In another embodiment of the present application, Figure 2 As shown, the light blocking layer 6 extends to a portion of the surface of the insulating layer 5 , and the first contact electrode 3 covers the upper surface of the light blocking layer 6 .

[0077] On the basis of the above-mentioned embodiments, in one embodiment of the present application, the contact interfaces between the light blocking layer 6 and the first contact electrode 3 , the second contact electrode 4 , and the insulating layer 5 all have roughened surfaces.

[0078] On the basis of the above embodiments, in one embodiment of the present application, the substrate 1 includes a conductive substrate 1 .

[0079] Based on the above embodiments, in one embodiment of the present application, the first contact electrode 3 and the second contact electrode 4 both include but are not limited to: one or more stacks of Al, Ag, Ni, Cr, Au, Pt, Pd, Sn, W, Rh, Ir, Ru, Mg, Zn, In, Ti, and V.

[0080] The present application also provides a method for manufacturing a single-sided light-emitting LED chip, which is used to manufacture any of the above single-sided light-emitting LED chips, such as Figure 3 As shown, the method for manufacturing a single-sided light-emitting LED chip includes the following steps:

[0081] S01, such as Figure 4 As shown, a growth substrate 01 is provided;

[0082] In this embodiment, there is no limitation on the specific type of the growth substrate 01. Optionally, the growth substrate 01 may be a semiconductor substrate such as a sapphire substrate, a silicon substrate or a silicon carbide substrate. The specific material of the growth substrate 01 may be selected and used according to requirements.

[0083] S02, such as Figure 5 As shown, an epitaxial stack 2 is grown on a growth substrate 01; the epitaxial stack 2 at least comprises: a first-type semiconductor layer 21, an active region 22, and a second-type semiconductor layer 23 sequentially stacked along a growth direction;

[0084] The specific number of layers and structure of the epitaxial stack 2 are not limited in this embodiment. The epitaxial stack 2 at least includes a first-type semiconductor layer 21, an active area 22, and a second-type semiconductor layer 23. In other embodiments, in order to improve lattice matching, the epitaxial stack 2 of the LED chip may also include a superlattice structure, etc.

[0085] It should be noted that the present embodiment does not limit the specific doping types of the first-type semiconductor layer 21 and the second-type semiconductor layer 23. The doping types of the first-type semiconductor layer 21 and the second-type semiconductor layer 23 are opposite. The first-type semiconductor layer 21 can be a P-type semiconductor layer or an N-type semiconductor layer. The materials of the N-type semiconductor layer and the P-type semiconductor layer can be GaN or AlGaN.

[0086] S03, such as Figure 6 As shown, a second contact electrode 4 is deposited on the surface of the second type semiconductor layer 23;

[0087] Optionally, in this embodiment, the second contact electrode 4 includes a reflective metal material.

[0088] S04, such as Figure 7 As shown, the surface of the second contact electrode 4 facing away from the epitaxial stack 2 is bonded to the substrate 1 through a bonding process;

[0089] S05, such as Figure 8 As shown, the growth substrate 01 is peeled off;

[0090] S06, such as Fig. 9 As shown, the epitaxial stack 2 is etched so that the second contact electrode 4 has an exposed first mesa A on one side facing the epitaxial stack 2, the first mesa A surrounds the epitaxial stack 2, and the side surface of the epitaxial stack 2 facing away from the substrate 1 is a light-emitting mesa 24;

[0091] S07, such as Fig.10 As shown, an insulating layer 5 is deposited to cover the sidewalls of the epitaxial stack 2 and extend to a portion of the surface of the first terrace A;

[0092] S08, such as Fig.11 As shown, a first contact electrode 3 is manufactured so as to cover the side wall and the first mesa A of the epitaxial stack 2 through the spacer insulating layer 5, and extend to a part of the light emitting mesa 24 to form a connection with the first type semiconductor layer 21;

[0093] S09, such as Fig.12 As shown, a light blocking layer 6 of an insulating material is formed on the exposed first mesa A to cover the sidewall of the insulating layer 5 and to be bonded to the first contact electrode 3;

[0094] The light blocking layer 6 , the first contact electrode 3 and the second contact electrode 4 constitute a light blocking structure.

[0095] On the basis of the above embodiments, in one embodiment of the present application, the insulating layer 5 includes but is not limited to one or more of silicon oxide, aluminum oxide, silicon nitride, titanium fluoride, magnesium fluoride, and zirconium oxide.

[0096] Based on the above embodiments, in one embodiment of the present application, refer to Figure 1 As shown, a first electrode pad 31 is provided on a portion of the surface of the first contact electrode 3 facing away from the insulating layer 5 .

[0097] Based on the above embodiments, in an embodiment of the present application, the light blocking layer 6 covers the side wall of the insulating layer 5 located on the first mesa A, and the first contact electrode 3 covers at least a portion of the side wall of the insulating layer 5 close to the light emitting mesa 24 .

[0098] In another embodiment of the present invention, the light blocking layer 6 covers the side wall of the insulating layer 5 located on the first table A, and the first contact electrode 3 completely covers the side wall of the insulating layer 5 close to the light-emitting table 24, thereby preventing the light emitted from the light-emitting table 24 from being transmitted to the side wall of the insulating layer 5, thereby reducing the light loss of the LED chip.

[0099] On the basis of the above embodiments, in one embodiment of the present application, the light blocking layer 6 is a single-layer insulating layer or a multi-layer insulating layer.

[0100] Optionally, in this embodiment, the multi-layer insulation layer includes a DBR structure.

[0101] It should be noted that in this embodiment, the DBR structure is a periodic structure in which two materials with different refractive indices are alternately stacked in an ABAB manner, wherein the high refractive index layer can be made of Ti 3 O 5 layer, the low refractive index layer can be made of SiO 2and, the number of cycles of the DBR structure alternately stacked is not specifically limited and can be set according to actual needs.

[0102] On the basis of the above embodiments, in one embodiment of the present application, the first contact electrode 3 includes a reflective metal material, and the light blocking layer 6 includes a reflective insulating material.

[0103] Optionally, in this embodiment, the light blocking layer 6 includes but is not limited to one or more of titanium dioxide, aluminum oxide, and white silica gel.

[0104] To further improve the light extraction efficiency of the LED chip, optionally, in this embodiment, the insulating layer 5 includes an insulating dielectric material, and the first contact electrode 3 and the insulating layer 5 form an ODR structure.

[0105] In another embodiment of the present application, the first contact electrode 3 includes a light-absorbing metal material, and the light-blocking layer 6 includes a light-absorbing insulating material.

[0106] Optionally, in this embodiment, the light blocking layer 6 includes but is not limited to one or more of black epoxy resin, black silicone, and carbon black filled polymer.

[0107] On the basis of the above embodiments, in an embodiment of the present application, the light blocking layer 6 extends to a portion of the surface of the first contact electrode 3 .

[0108] In another embodiment of the present invention, the light blocking layer 6 covers the side wall of the first contact electrode 3 located on the first mesa A, and extends to a portion of the upper surface of the first contact electrode 3 .

[0109] In another embodiment of the present application, refer to Figure 2 As shown, the light blocking layer 6 extends to a portion of the surface of the insulating layer 5 , and the first contact electrode 3 covers the upper surface of the light blocking layer 6 .

[0110] On the basis of the above-mentioned embodiments, in one embodiment of the present application, the contact interfaces between the light blocking layer 6 and the first contact electrode 3 , the second contact electrode 4 , and the insulating layer 5 all have roughened surfaces.

[0111] On the basis of the above embodiments, in one embodiment of the present application, the substrate 1 includes a conductive substrate 1 .

[0112] Based on the above embodiments, in one embodiment of the present application, the first contact electrode 3 and the second contact electrode 4 both include but are not limited to: one or more stacks of Al, Ag, Ni, Cr, Au, Pt, Pd, Sn, W, Rh, Ir, Ru, Mg, Zn, In, Ti, and V.

[0113] An embodiment of the present application further provides a display device, comprising: any one of the above-mentioned single-sided light-emitting LED chips, or a single-sided light-emitting LED chip prepared using any one of the above-mentioned methods.

[0114] In summary, through the above technical scheme, it can be known that a single-sided light-emitting LED chip provided in this embodiment includes: a second contact electrode and an epitaxial stack arranged in sequence on one side of a substrate, wherein the second contact electrode has an exposed first table surface on a side facing the epitaxial stack, the first table surface surrounds the epitaxial stack, and the side surface of the epitaxial stack facing away from the substrate is a light-emitting table surface; a first contact electrode, which covers the side wall and the first table surface of the epitaxial stack by means of an insulating layer, and a light-blocking layer of insulating material is provided on part of the first table surface, which is used to cover the side wall of the insulating layer and is joined to the first contact electrode, and the second contact electrode can block the light from the LED chip substrate, and the first contact electrode combined with the light-blocking layer can block the light from the side wall of the epitaxial stack and the light transmitted to the insulating layer, so that the light-blocking structure composed of the light-blocking layer, the first contact electrode and the second contact electrode can avoid the side light of the LED chip and the stray light caused by the optical waveguide effect, so that the light emitted by the LED chip is emitted from the light-emitting table surface to achieve single-sided light emission of the LED chip.

[0115] Furthermore, by configuring the first contact electrode to include a reflective metal material and the light blocking layer to include a reflective insulating material, light propagating laterally in the epitaxial stack can be reflected so that the light is ultimately emitted from the light-emitting table, thereby improving the light extraction efficiency of the LED chip.

[0116] Furthermore, according to actual needs, by setting the first contact electrode to include a light-absorbing metal material and the light-blocking layer to include a light-absorbing insulating material, light propagating laterally in the epitaxial stack can be absorbed without reflection, so that the light is emitted vertically from the light-emitting table, thereby obtaining a better light distribution curve.

[0117] Furthermore, by extending the light blocking layer to part of the surface of the first contact electrode, the contact area between the light blocking layer and the first contact electrode is increased, thereby improving the adhesion between the light blocking layer and the first contact electrode and preventing the light blocking layer from falling off and causing light leakage from the side of the LED chip.

[0118] Furthermore, by setting a light-blocking layer extending to part of the surface of the insulating layer, and the first contact electrode covering the upper surface of the light-blocking layer, the adhesion between the light-blocking layer, the insulating layer and the first contact electrode can be improved, thereby preventing the light-blocking layer from falling off and causing light leakage from the side of the LED chip.

[0119] Furthermore, by providing a roughened surface at the contact interface between the light blocking layer and the first contact electrode, the second contact electrode and the insulating layer, the adhesion between the light blocking layer and the insulating layer, the first contact electrode and the second contact electrode can be improved, thereby preventing the light blocking layer from falling off and causing light leakage from the side of the LED chip.

[0120] The method for manufacturing a single-sided light-emitting LED chip provided in this embodiment achieves the beneficial effects of the above-mentioned single-sided light-emitting LED chip, and its manufacturing process is simple and convenient, and is easy to produce.

[0121] A display device provided in this embodiment includes the above-mentioned single-sided light-emitting LED chip, or a single-sided light-emitting LED chip prepared by the above-mentioned method. The LED chip has single-sided light output and no stray light crosstalk, and has a better display effect to meet the requirements of volume and light source clarity and in application fields near the eye or with high integration requirements.

[0122] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "horizontal", "vertical", "upper", "lower", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0123] It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0124] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A single-sided emitting LED chip, characterized in that: include: substrate; A second contact electrode and an epitaxial stack are sequentially arranged on one side of the substrate, wherein the epitaxial stack at least comprises: a second-type semiconductor layer, an active region and a first-type semiconductor layer sequentially stacked on the second contact electrode from bottom to top, and the second contact electrode is electrically connected to the second-type semiconductor layer; wherein a surface of the second contact electrode facing the epitaxial stack has an exposed first mesa, the first mesa surrounds the epitaxial stack, and a surface of the epitaxial stack facing away from the substrate is a light-emitting mesa; an insulating layer covering the sidewalls of the epitaxial stack and extending to a portion of the surface of the first mesa; A first contact electrode, which covers the sidewall of the epitaxial stack and the first mesa by separating the insulating layer, and extends to a portion of the light-emitting mesa to form an electrical connection with the first-type semiconductor layer; A light-blocking layer made of an insulating material is provided on part of the first mesa, which is used to cover the side wall of the insulating layer and is connected to the first contact electrode; The light blocking layer, the first contact electrode and the second contact electrode form a light blocking structure.

2. The single-sided emitting LED chip according to claim 1, characterized in that: The light blocking layer covers the side wall of the insulating layer located on the first mesa, and the first contact electrode covers at least a portion of the side wall of the insulating layer close to the light emitting mesa.

3. The single-sided light-emitting LED chip according to claim 1, characterized in that: The second contact electrode includes a reflective metal material.

4. The single-sided light-emitting LED chip according to claim 1, characterized in that: The first contact electrode includes a reflective metal material, and the light blocking layer includes a reflective insulating material.

5. The single-sided light-emitting LED chip according to claim 1, characterized in that: The first contact electrode includes a light-absorbing metal material, and the light-blocking layer includes a light-absorbing insulating material.

6. The single-sided light-emitting LED chip according to claim 1, characterized in that: The light blocking layer is a single-layer insulating layer or a multi-layer insulating layer.

7. The single-sided light-emitting LED chip according to claim 1, characterized in that: The light blocking layer extends to a portion of the surface of the first contact electrode.

8. The single-sided light-emitting LED chip according to claim 1, characterized in that: The light blocking layer extends to a portion of the surface of the insulating layer, and the first contact electrode covers the upper surface of the light blocking layer.

9. The single-sided light-emitting LED chip according to claim 1, characterized in that: The contact interfaces between the light blocking layer and the first contact electrode, the second contact electrode and the insulating layer all have roughened surfaces.

10. A method for manufacturing a single-sided light-emitting LED chip, characterized in that: The steps include: S01, providing a growth substrate; S02, growing an epitaxial stack on the growth substrate; the epitaxial stack at least comprising: a first-type semiconductor layer, an active region, and a second-type semiconductor layer sequentially stacked along a growth direction; S03, depositing a whole surface of a second contact electrode on the surface of the second-type semiconductor layer; S04, bonding a surface of the second contact electrode facing away from the epitaxial stack to a substrate through a bonding process; S05, peeling off the growth substrate; S06, etching the epitaxial stack so that a surface of the second contact electrode facing the epitaxial stack has an exposed first mesa, the first mesa surrounds the epitaxial stack, and a surface of the epitaxial stack facing away from the substrate is a light-emitting mesa; S07, depositing an insulating layer to cover the sidewalls of the epitaxial stack and extend to a portion of the surface of the first mesa; S08, manufacturing a first contact electrode, so that it covers the side wall of the epitaxial stack and the first mesa by separating the insulating layer, and extends to a part of the light-emitting mesa to form a connection with the first-type semiconductor layer; S09, forming a light-blocking layer of an insulating material on the exposed first mesa, so as to cover the sidewall of the insulating layer and be bonded to the first contact electrode; The light blocking layer, the first contact electrode and the second contact electrode form a light blocking structure.

11. A display device, characterized in that: include: A single-sided emitting LED chip according to any one of claims 1 to 9, or a single-sided emitting LED chip prepared by the method according to claim 10.

Images