High-temperature-resistant photoelectric glass material as well as preparation method and application thereof

Abstract

The invention provides a high-temperature-resistant photoelectric glass material as well as a preparation method and application thereof, and the high-temperature-resistant photoelectric glass material provided by the invention is prepared from the following components in percentage by mass: 50 to 60 percent of SiO2, 1 to 5 percent of AgO, 10 to 20 percent of Na2O, 0 to 6 percent of K2O, 1 to 5 percent of B2O3, 10 to 20 percent of Al2O3, 0 to 5 percent of ZrO2, 1 to 2 percent of MgO, 1 to 3 percent of CaO and 1 to 3 percent of CeO2. The photoelectric glass material has the advantages of excellent spectrum transmittance, effective stray light elimination area, high baking temperature resistance and good impact resistance after chemical strengthening, and can be used for preparing optical input windows in an optical system and a photoelectric detection system. The device plays an important role in the aspects of low-light night vision, ultraviolet detection, space measurement and control, information display, industrial cameras, high-end lenses and the like.

Description

Technical Field

[0001] This application relates to the technical field of glass, and particularly to a glass material, especially a high-temperature resistant optoelectronic glass material and its preparation method and application. Background Art

[0002] Any discussion of the prior art throughout the specification should not be regarded as an admission that such prior art is well-known or constitutes a part of the common general knowledge in the art.

[0003] Optoelectronic glass is a new type of special glass. This glass can generate an efficient absorption layer with a non-reflective interface with the substrate glass around the effective area through the self-substrate generation technology, making it the preferred optical input window material in optical systems and optoelectronic detection systems. The performance and reliability of this glass are directly related to the performance and lifespan of the entire system. In the past few years, with the rapid development of fields such as low-light level night vision, ultraviolet detection, space measurement and control, information display, industrial cameras, and high-end lenses, the requirements for optoelectronic glass have become increasingly high, which not only includes its spectral range and stray light absorption rate, but also involves the baking temperature resistance, as well as the resistance to impact, drop, and bending.

[0004] Traditional optoelectronic glass often shows certain limitations when dealing with high temperatures and mechanical impacts. Many existing materials soften and deform at high temperatures, resulting in a decline in optical performance. In addition, in high-intensity application scenarios, the problem of glass being fragile is still prominent, affecting the stability and service life of the equipment. Although there are some enhanced optoelectronic glass materials on the market, their performance in terms of high transmittance and low absorption rate is still not satisfactory, and it is difficult to fully meet the strict requirements of high-precision optical and optoelectronic devices. Therefore, it is imperative to develop a new type of optoelectronic glass material with more excellent comprehensive performance.

[0005] To meet these increasingly high requirements, chemical strengthening technology is applied to the production of optoelectronic glass. This technology enhances the overall strength of the glass by reducing or eliminating microcracks on the glass surface and forming a surface compressive stress layer. This enhancement not only improves the resistance of the glass to impact, drop, and bending, but also optimizes its performance in high-temperature environments, further meeting the needs of high-end applications. However, chemical strengthening mainly enhances the mechanical strength by forming a compressive stress layer on the glass surface, but it cannot change the essential properties of the glass and has limited or no impact on the improvement of other properties. Therefore, although chemical strengthening makes a certain contribution to performance improvement, it cannot fully meet the strict requirements of high-end applications. The most important and crucial thing to fundamentally improve the performance of optoelectronic glass lies in the optimization of the glass composition. Summary of the Invention

[0006] The object of the present invention is to provide a high-temperature resistant optoelectronic glass material, its preparation method and application by optimizing the chemical composition of the optoelectronic glass. The high-temperature resistant optoelectronic glass material described in the present invention has excellent properties, including high spectral transmittance, an effective stray light elimination region to effectively reduce stray light interference, a relatively high baking temperature resistance to ensure stability and durability in a high-temperature environment, and good mechanical strength, which can improve the impact and drop resistance of the glass, extend its service life and safety. The high-temperature resistant optoelectronic glass material described in the present invention can be used to prepare optical input windows in optical systems and optoelectronic detection systems, significantly improving the application performance and reliability of optoelectronic glass in fields such as low-light level night vision, ultraviolet detection, space measurement and control, information display, industrial cameras, and high-end lenses.

[0007] Specifically, the present invention provides the following technical features, and the combination of one or more of the following technical features constitutes the technical solution of the present invention:

[0008] In the first aspect, the present invention provides a high-temperature resistant optoelectronic glass material composition, which comprises or consists of the following components in mass percentage: 50 - 60% of SiO 2 , 1 - 5% of AgO, 10 - 20% of Na 2 O, 0 - 6% of K 2 O, 1 - 5% of B 2 O 3 , 10 - 20% of Al 2 O 3 , 0 - 5% of ZrO 2 , 1 - 2% of MgO, 1 - 3% of CaO, and 1 - 3% of CeO 2 .

[0009] In the present invention, SiO 2 as the glass-forming oxide is the main component forming the glass skeleton network structure and exists in the form of [SiO 4 tetrahedrons in the glass structure. SiO 2 plays a role in reducing the thermal expansion coefficient of the glass, improving the thermal stability, heat resistance, chemical stability, and mechanical strength of the glass, etc. In the embodiments of the present invention, the content of SiO 2 is 50 - 60% in mass percentage. In some optional embodiments, the content of SiO 2The content of [substance] is selected from: 54.3 - 60.0%, 55.0 - 60.0%, 50.0 - 60.0%, 52.0 - 60.0%, 58.0 - 60.0%, 54.3 - 55.0%, 50.0 - 54.3%, 52.0 - 54.3%, 54.3 - 58.0%, 50.0 - 55.0%, 52.0 - 55.0%, 55.0 - 58.0%, 55.1 - 58.0%, 55.6 - 58.0%, 55.8 - 58.0%, 56.0 - 58.0%, 56.1 - 58.0%, 56.3 - 58.0%, 56.6 - 58.0%, 56.8 - 58.0%, 57.0 - 58.0%, 57.1 - 58.0%, 57.3 - 58.0%, 57.6 - 58.0%, 57.8 - 58.0%, 50.0 - 52.0%, 50.0 - 58.0%, 52.0 - 58.0%, 58.0 - 59.9%, 58.0 - 59.8%, 58.0 - 59.5%, 58.0 - 59.3%, 58.0 - 59.1%, 58.0 - 59.0%, 58.0 - 58.9%, 58.0 - 58.6%, 58.0 - 58.3%, 58.0 - 58.2%, etc. Among them, SiO 2 Components such as quartz sand (silica sand), silica stone, etc. can be used as raw materials.

[0010] In the present invention, AgO is an important additive. Its introduction can improve the optical properties of the glass. It is usually introduced into the glass using silver nitrate. When melted, silver nitrate can precipitate colloidal particles of silver, and after heating and reduction to develop color, the glass becomes light yellow. Secondly, it can improve the chemical stability, mechanical strength, and impact resistance of the glass. In the embodiments of the present invention, by mass percentage, the content of AgO is 1 - 5%. In some alternative embodiments, by mass percentage, the content of AgO is selected from: 1.0 - 1.5%, 1.0 - 1.49%, 1.0 - 1.46%, 1.0 - 1.45%, 1.0 - 1.43%, 1.0 - 1.40%, 1.0 - 1.39%, 1.0 - 1.35%, 1.0 - 1.3%, 1.0 - 1.25%, 1.0 - 1.2%, 1.0 - 1.15%, 1.0 - 1.10%, 1.0 - 1.9%, 1.0 - 2.0%, 1.0 - 1.29%, 1.0 - 3.0%, 1.0 - 5.0%, 1.5 - 2.0%, 1.5 - 3.0%, 1.5 - 5.0%, 2.0 - 3.0%, 2.0 - 5.0%, 3.0 - 5.0%, etc.

[0011] Among them, AgO can use silver nitrate (AgNO 3 ) etc. as raw materials.

[0012] In the present invention, Na 2 O and K2 O is an alkali metal oxide, which acts as an extra-network former in the glass structure. Its introduction can significantly reduce the glass melting temperature, improve the melting quality, and improve glass forming. However, if its content is too high, it will affect the chemical stability of the glass and have a series of effects on the forming process. Moreover, Na in the glass + is a necessary condition for achieving chemical strengthening. In the embodiments of the present invention, by mass percentage, the content of Na 2 2O is 10-20%, and the content of K 2 2O is 0-6%.

[0013] In some alternative embodiments, by mass percentage, the content of Na 2 2O is selected from: 10.0-12.0%, 10.1-12.0%, 10.5-12.0%, 10.8-12.0%, 11.0-12.0%, 11.3-12.0%, 11.5-12.0%, 11.6-12.0%, 11.8-12.0%, 10.0-15.0%, 10.0-18.0%, 10.0-20.0%, 12.0-14.0%, 12.0-14.9%, 12.0-14.6%, 12.0-14.3%, 12.0-14.0%, 12.0-13.9%, 12.0-13.6%, 12.0-13.5%, 12.0-13.3%, 12.0-13.0%, 12.0-12.9%, 12.0-12.7%, 12.0-12.5%, 12.0-12.3%, 12.0-15.0%, 12.0-18.0%, 12.0-20.0%, 15.0-18.0%, 15.0-20.0%, 18.0-20.0%, etc.

[0014] Among them, the Na 2 2O component can use soda ash (Na 2 2CO 3 3), sodium nitrate (NaNO 3 3), etc. as raw materials.

[0015] In some alternative embodiments, by mass percentage, the content of K 2The content of O is selected from: 0, 0.0 - 2.0%, 0.0 - 2.5%, 0.0 - 3.0%, 0.0 - 4.0%, 0.0 - 6.0%, 2.0 - 2.5%, 2.0 - 3.0%, 2.0 - 4.0%, 2.0 - 6.0%, 2.5 - 3.0%, 2.5 - 4.0%, 2.5 - 6.0%, 3.1 - 4.0%, 3.3 - 4.0%, 3.5 - 4.0%, 3.8 - 4.0%, 3.0 - 4.0%, 3.0 - 6.0%, 4.0 - 5.9%, 4.0 - 5.6%, 4.0 - 5.3%, 4.0 - 5.0%, 4.0 - 4.9%, 4.0 - 4.6%, 4.0 - 4.3%, 4.0 - 4.2%, 4.0 - 6.0%, and so on.

[0016] Among them, K 2 The KO component can use potassium nitrate (KNO 3 ), potassium carbonate (K 2 CO 3 ) and the like as raw materials.

[0017] In the present invention, the combination of Na 2 O and K 2 O can significantly reduce the melting temperature of the glass, improve the fluidity of the glass, and make the glass manufacturing process more efficient and energy-saving. Na 2 O provides stronger alkalinity, which helps to reduce the melting temperature, while K 2 O helps to improve the chemical stability and optical properties of the glass. The combination of the two can effectively adjust the viscosity and working temperature range of the glass, ensuring good processing performance during the glass forming process. K 2 O can also improve the water resistance and chemical resistance of the glass, making the glass more stable and durable during use. In addition, the combination of Na 2 O and K 2 O can adjust the thermal expansion coefficient of the glass, enhance the mechanical strength and thermal stability of the glass, and make it applicable to a wider range of application fields. In some embodiments of the present invention, in terms of mass percentage, the preferred sum of the contents of Na 2 O and K 2 O is 16 - 20.5%. In some alternative embodiments, the sum of the contents of Na 2 O and K 2 O can be 16 - 20%, 16 - 19%, 16 - 18%, 16 - 17.9%, 16 - 17%, 16 - 16.9%, and so on. In some embodiments of the present invention, when the content of K 2 O is not 0, the content of Na 2 O is more than 1.5 times the content of K 2 O, and preferably the content of Na 2 O is at least that of K2 2 to 7.5 times the O content, such as Na 2 The content of O is at least K 2 3 to 7.5 times, 3 to 5 times, 3 times, 5 times, 7.5 times, etc. of the O content.

[0018] In the present invention, B 2 O 3 is a glass - forming oxide. In silicate glass, B can partially replace Si to form a network structure. Additionally, B 2 O 3 has a fluxing effect in the glass, which can reduce the high - temperature viscosity of the glass, save costs, and facilitate production. However, as the content of B 2 O 3 increases, the devitrification range of the glass increases, and B 2 O 3 is volatile and can cause environmental pollution, so its dosage should be strictly controlled during the production process. In the embodiments of the present invention, by mass percentage, the content of B 2 O 3 is 1 - 5%.

[0019] In some alternative embodiments, by mass percentage, the content of B 2 O 3 is selected from: 1.0 - 2.0%, 1.0 - 2.5%, 1.0 - 2.49%, 1.0 - 2.4%, 1.0 - 2.3%, 1.0 - 2.2%, 1.0 - 2.1%, 1.0 - 3.4%, 1.0 - 3.5%, 1.0 - 4.0%, 1.0 - 5.0%, 2.5 - 3.5%, 2.5 - 4.0%, 2.5 - 5.0%, 3.5 - 4.0%, 3.5 - 5.0%, 4.0 - 5.0%, etc.

[0020] Among them, the B 2 O 3 component can use borax (Na 2 B 4 O 7 ·10H 2 O), boric acid (H 3 BO 3 ), boron oxide (B 2 O 3 ) and the like as raw materials. In the present invention, SiO 2 and B 2 O 3 have a synergistic effect. SiO 2 and B 2 O 3Play a synergistic role in glass preparation by reducing the melting temperature, improving chemical stability, enhancing the thermal expansion coefficient, strengthening heat resistance, improving optical properties, and enhancing mechanical strength. Among them, B 2 O 3 can significantly reduce the melting temperature of the glass, making the production process more energy-efficient, and improve the chemical stability of the glass, making it more resistant to corrosion and acid-base properties. The combination of the two can adjust the thermal expansion coefficient of the glass, enabling it to maintain better dimensional stability during temperature changes, while further improving the heat resistance and thermal stability of the glass. SiO 2 provides the basic structure and high melting point characteristics of the glass, while B 2 O 3 improves the optical properties of the glass, such as increasing the light transmittance and adjusting the refractive index, as well as enhancing the mechanical properties, increasing its hardness and impact resistance. By optimizing the ratio of SiO 2 and B 2 O 3 , special glasses with excellent properties can be manufactured, which perform well under extreme conditions such as high temperature and mechanical impact. In some embodiments of the present invention, by mass percentage, the preferred sum of the contents of SiO 2 and B 2 O 3 is 53-64%. In some alternative embodiments, the sum of the contents of SiO 2 and B 2 O 3 can be 53-60%, 55-64%, 56-64%, 58-64%, 59-64%, 59-63.9%, 59-63.5%, 59-63.0%, 59-62.9%, 59-62.5%, 59-62%, 59-61.9%, 59-61.5%, 59-61%, 59-60.9%, 59-60.5%, 59-60%, 59-59.9%, 59-59.5%, 58-60%, 58-59%, 58.5-59.0%, 58.6-59.0%, etc.

[0021] In some embodiments of the present invention, the content of B 2 O 3 is at least 1.5% more than the content of SiO 2 , for example, the content of B 2 O 3 is 1.5-10% of the content of SiO 2 . In a preferred manner, the content of B 2 O 3 is at least 1.7-7% of the content of SiO 2 , for example, the content of B 2 O 3 can be the content of SiO2 1.7 - 6.5%, 1.7 - 5%, 1.7 - 4%, 1.7 - 3%, or 1.7 - 2%, etc.

[0022] In the present invention, Al 2 O 3 is a glass intermediate oxide, and the content thereof affects the thermal expansion coefficient and chemical and thermal stability of the glass. Al 2 O 3 can increase the machinability of the glass. Additionally, in the glass, [AlO 4 has a volume of 41 cm 3 / mol, [SiO 4 has a volume of 27 cm 3 / mol, and [AlO 4 is 52% larger in volume than [SiO 4 . Therefore, [AlO 4 will cause an increase in glass voids, which is beneficial to improving the ion exchange efficiency and endowing the glass material with excellent chemical strengthening characteristics. In an embodiment of the present invention, by mass percentage, the content of Al 2 O 3 is 10 - 20%.

[0023] In some alternative embodiments, by mass percentage, the content of Al 2 O 3 is selected from: 10.0 - 11.5%, 10.0 - 14.2%, 10.0 - 17.5%, 10.0 - 18.0%, 10.0 - 20.0%, 11.5 - 14.2%, 11.5 - 17.5%, 11.5 - 18.0%, 11.5 - 20.0%, 14.2 - 17.5%, 14.2 - 18.0%, 14.2 - 20.0%, 14.3 - 17.5%, 14.5 - 17.5%, 14.8 - 17.5%, 15 - 17.5%, 15.5 - 17.5%, 15.8 - 17.5%, 16 - 17.5%, 16.5 - 17.5%, 16.8 - 17.5%, 17 - 17.5%, 17.2 - 17.5%, 17.0 - 18.0%, 17.0 - 20.0%, 17.5 - 18.0%, 17.5 - 17.9%, 17.5 - 19.0%, 17.5 - 20.0%, 18.0 - 20.0%, etc.

[0024] Among them, the Al 2 O 3 component can use alumina powder (Al 2 O 3 ), aluminum hydroxide (Al(OH) 3 ), etc. as raw materials.

[0025] In the present invention, ZrO 2 is an intermediate oxide of glass, which has the effect of improving chemical stability and preventing the exposure of alkali metal and alkaline earth metal ions. It is also an important component for increasing the tensile elastic modulus and is very helpful for improving the hardness after chemical strengthening of the glass. In an embodiment of the present invention, the content of ZrO 2 is 0 - 5% by mass.

[0026] In some alternative embodiments, the content of ZrO 2 is selected from: 0, 0.0 - 1.0%, 0.0 - 2.0%, 0.0 - 3.0%, 0.0 - 4.0%, 0.0 - 5.0%, 1.0 - 2.0%, 1.0 - 2.5%, 1.0 - 3.0%, 1.0 - 3.5%, 1.0 - 4.0%, 1.0 - 5.0%, 2.0 - 5.0%, 1.0 - 1.9%, 1.0 - 1.5%, and so on. Among them, the ZrO 2 component can use zirconium silicate (ZrSiO 4 ), zirconia powder (ZrO 2 ), etc. as raw materials.

[0027] In the present invention, the combination of Al 2 O 3 and ZrO 2 can significantly improve the heat resistance, mechanical strength and chemical stability of the glass. Al 2 O 3 increases the hardness and chemical corrosion resistance of the glass, enabling it to remain stable in a harsh chemical environment, while ZrO 2 improves the heat resistance and wear resistance of the glass, enabling it to maintain excellent performance in a high-temperature environment. The combined use of the two can keep the glass in structural integrity at high temperatures and have good thermal stability during temperature changes. The addition of ZrO 2 can also reduce the thermal expansion coefficient of the glass, and cooperate with Al 2 O 3 to enhance the thermal shock resistance of the glass. In addition, the combination of Al 2 O 3 and ZrO 2 helps to optimize the optical properties of the glass, making it perform excellently in optical applications. By controlling the ratio of Al 2 O 3 and ZrO 2 , high-performance glass with excellent heat resistance, mechanical strength and chemical stability can be prepared, which is suitable for applications under extreme conditions such as high temperature and mechanical load. In some embodiments of the present invention, the content of Al 2 O 3 and ZrO2 The sum of the contents is 12 - 21%. In some preferred embodiments, Al 2 O 3 and ZrO 2 The sum of the contents can be 12 - 19%, 12 - 18.5%, 18 - 21%, 18.5 - 21%, 18.5 - 19%, 18.5 - 18.9%, 18.0 - 18.5%, 17.5 - 18.5%, 17.0 - 18.5%, 18 - 19%, etc.

[0028] In the present invention, the addition of MgO and CaO can stabilize the glass structure, reduce its phase separation tendency, and thus improve the homogeneity and stability of the glass. At the same time, MgO and CaO belong to glass network modifiers in the present invention. It can act on the silicon - oxygen network formed by SiO 2 to reduce the melting temperature of the glass (fluxing effect) by introducing non - network oxygen (network - breaking effect). This network - breaking effect does not cause a substantial break in the network, but makes it easier to adjust the morphology on the basis of not destroying the overall structure of the silicon - oxygen network. In the embodiments of the present invention, by mass percentage, the content of MgO is 1 - 2%, and the content of CaO is 1 - 3%.

[0029] In some alternative embodiments, by mass percentage, the content of MgO is selected from: 1.0 - 1.5%, 1.6 - 2.0%, 1.0 - 2.0%, 1.5 - 2.0%, 1.6 - 2.0%, 1.7 - 2.0%, 1.8 - 2.0%, 1.9 - 2.0%, etc. Among them, raw materials such as magnesium oxide and basic magnesium carbonate can be used as the MgO component.

[0030] In some alternative embodiments, by mass percentage, the content of CaO is selected from: 1.0 - 1.5%, 1.1 - 1.5%, 1.2 - 1.5%, 1.3 - 1.5%, 1.4 - 1.5%, 1.5 - 1.9%, 1.5 - 1.8%, 1.5 - 1.7%, 1.5 - 1.6%, 1.0 - 2.0%, 1.0 - 2.5%, 1.0 - 3.0%, 1.5 - 2.0%, 1.5 - 2.5%, 1.5 - 3.0%, 2.0 - 2.5%, 2.0 - 3.0%, 2.5 - 3.0%, etc. Among them, raw materials such as calcium oxide and calcium carbonate can be used as the CaO component.

[0031] In the present invention, the use of MgO and CaO can improve the heat resistance, chemical stability and mechanical strength of glass. MgO plays a role in enhancing the hardness and improving the chemical corrosion resistance of the glass, enabling the glass to remain stable in high-temperature and corrosive environments. CaO, on the other hand, helps to improve the stability and hardness of the glass and increase its mechanical strength. The combined use of the two can effectively adjust the melting temperature and viscosity of the glass, making the glass have better fluidity and forming properties during the production process. In addition, the combination of MgO and CaO can optimize the thermal expansion coefficient of the glass, giving it good dimensional stability when the temperature changes and reducing the risk of cracking caused by thermal stress. This synergistic effect enables the glass to perform excellently under extreme conditions such as high temperature, mechanical load and chemical corrosion. By optimizing the ratio of MgO and CaO, glass materials with excellent physical and chemical properties can be prepared, which are suitable for the high-performance requirements of multiple fields such as electronics and optics. In some embodiments of the present invention, calculated by mass percentage, the sum of the contents of MgO and CaO is less than 5%, preferably, the sum of the contents of MgO and CaO is not less than 2%. In some alternative embodiments, the sum of the contents of MgO and CaO is 2-4.5%, for example, it can be 2-4.0%, 2-3.5%, 2-3.0%, 3-3.5%, 3-4.5%, 3.5-4.4%, 3.5-4.5%, 3.5-4.0%, 3.5-3.8%, 2.1-3.5%, 2.5-3.5%, 2.8-3.5%, 3.1-3.5%, 3.2-3.5%, 3.3-3.5%, and so on. And, in some embodiments, the ratio of the content of MgO to CaO is not less than 0.5, preferably not less than 0.8, and the preferred content ratio is 0.5-1.5. For example, it can be 0.8-1.5%, 1-1.5%, 1-1.4%, 1-1.35%, 1.3-1.5%, and so on.

[0032] In the present invention, CeO 2 is a variable-valence oxide, which mainly removes bubbles from the glass melt by being reduced (losing oxygen) at high temperatures and oxidized (gaining oxygen) at low temperatures. The process of releasing oxygen during decomposition at high temperatures increases the gas partial pressure in the bubbles, causing the bubble volume to increase, thereby accelerating the rise of the bubbles and their removal from the molten glass. In addition, the released oxygen can also participate in the oxidation reactions in the molten glass, helping to eliminate some impurities with strong reducing properties and improving the optical properties and chemical stability of the glass. In the embodiments of the present invention, calculated by mass percentage, the content of CeO 2 is 1-3%. In some alternative embodiments, calculated by mass percentage, the content of CeO 2The content of [substance] is selected from: 1.0 - 2.0%, 1.1 - 2.0%, 1.3 - 2.0%, 1.5 - 2.0%, 1.8 - 2.0%, 1.9 - 2.0%, 1.0 - 3.0%, 2.0 - 3.0%, 2.0 - 2.9%, 2 - 2.8%, 2 - 2.5%, 2 - 2.3%, 2 - 2.2%, etc. Among them, CeO 2 Components such as cerium oxide can be used as raw materials.

[0033] In some embodiments of the present invention, the content of CeO 2 is 1.5 - 6% of the total content of SiO 2 and B 2 O 3 , preferably 1.5 - 4%, and can be, for example, 1.5 - 3.5%, 3 - 5%, 3 - 4%, 3 - 3.5%, or 3 - 3.4%.

[0034] For example, in some embodiments of the present invention, the high - temperature resistant optoelectronic glass material composition, by mass percentage, comprises or consists of the following components: 52 - 60% of SiO 2 , 1 - 4% of AgO, 12 - 20% of Na 2 O, 0 - 5% of K 2 O, 1 - 4% of B 2 O 3 , 10 - 20% of Al 2 O 3 , 0 - 4% of ZrO 2 , 1 - 2% of MgO, 1 - 2% of CaO, and 1 - 3% of CeO 2 .

[0035] For example, in some embodiments of the present invention, the high - temperature resistant optoelectronic glass material composition, by mass percentage, comprises: 52 - 60% of SiO 2 , 1 - 2.9% of AgO, 12 - 18% of Na 2 O, 0 - 4% of K 2 O, 1 - 4% of B 2 O 3 , 10 - 20% of Al 2 O 3 , 1 - 5% of ZrO 2 , 1 - 2% of MgO, 1 - 2% of CaO, and 1 - 3% of CeO 2 .

[0036] For example, in some embodiments of the present invention, the high - temperature resistant optoelectronic glass material composition, by mass percentage, comprises: 52 - 58% of SiO 2, 1 - 2% AgO, 10 - 15% Na 2 O, 2 - 4% K 2 O, 1 - 3.5% B 2 O 3 , 17 - 20% Al 2 O 3 , 1 - 1.9% ZrO 2 , 1 - 2% MgO, 1 - 2% CaO, and 2 - 3% CeO 2 .

[0037] For example, in some embodiments of the present invention, the high - temperature resistant optoelectronic glass material composition, by mass percentage, comprises: 55 - 58% SiO 2 , 1 - 1.5% AgO, 12 - 15% Na 2 O, 2 - 4% K 2 O, 1 - 3.5% B 2 O 3 , 17 - 18% Al 2 O 3 , 1 - 1.9% ZrO 2 , 1 - 2% MgO, 1 - 1.5% CaO, and 2 - 2.9% CeO 2 .

[0038] In a second aspect, a high - temperature resistant optoelectronic glass blank is provided, which is made of the glass composition described in the first aspect above.

[0039] In the embodiments of the present invention, the spectral transmittance of the optoelectronic glass blank to 900 nm light is ≥91.5%, preferably ≥92%. For example, in some embodiments of the present invention, the spectral transmittance of the optoelectronic glass blank of the present invention to 900 nm light can be controlled within 91.5 - 93%, 91.8 - 93%, 92 - 93%, 92.2 - 93%, 92.4 - 93%.

[0040] In the embodiments of the present invention, the softening point temperature of the optoelectronic glass blank of the present invention is ≥650 °C, preferably ≥670 °C. For example, in some embodiments, the softening point of the optoelectronic glass blank of the present invention can be controlled within 650 - 680 °C, 658 - 680 °C, 660 - 680 °C, 670 - 680 °C, 664 - 673 °C, 668 - 673 °C, 670 - 673 °C.

[0041] In a third aspect, a preparation method for preparing the high - temperature resistant optoelectronic glass blank described in the second aspect above is provided. The preparation method includes: uniformly mixing the raw materials, melting at 1560 - 1650 °C, stirring, clarifying, cooling to 1360 - 1480 °C for forming, and annealing at 470 - 600 °C.

[0042] In some embodiments of the present invention, the raw materials may also optionally include the following materials according to requirements: quartz sand, silver nitrate, sodium carbonate (or sodium nitrate), potassium carbonate (or potassium nitrate), boron oxide (or boric acid), aluminum hydroxide (or aluminum oxide), zirconium oxide, magnesium oxide (or basic magnesium carbonate), calcium oxide (or calcium carbonate), and cerium oxide.

[0043] In a fourth aspect, the present invention provides a high-temperature resistant optoelectronic glass material, which comprises a light-transmitting effective region glass and a light absorption layer.

[0044] Among them, the glass composition of the light-transmitting effective region is the same as the glass composition described in the first aspect above or is made from the glass blank described in the second aspect above; the light-transmitting effective region glass serves as a glass matrix, and by performing a reduction treatment on it, a light absorption layer can be formed on its surface. According to requirements, the light absorption layer is processed, for example, removing the light absorption layer in some regions can expose the light-transmitting effective region and allow the target light to pass through.

[0045] The 900 nm wavelength is located in the near-infrared (NIR) spectral region and is widely used in various optoelectronic and optical devices. In this wavelength band, many optoelectronic devices (such as photodetectors, infrared cameras, and fiber optic communication systems) require glass with high transmittance to ensure efficient light transmission and detection. In the embodiments of the present invention, the spectral transmittance of the light-transmitting effective region of the optoelectronic glass for 900 nm light is ≥91.5%, preferably ≥92%. This indicates that the optoelectronic glass of the present invention has extremely high light transmission efficiency at a wavelength of 900 nm. The high transmittance ensures the maximum transmission of light signals, reduces light loss, can improve the signal-to-noise ratio and working efficiency of the system. At the same time, the high transmittance guarantees the clarity of images and signals, providing high-quality detection and imaging effects, which makes the optoelectronic glass of the present invention particularly suitable for applications in fields such as low-light night vision, ultraviolet detection, space measurement and control, and information display. Further, in some embodiments of the present invention, the spectral transmittance of the light-transmitting effective region of the present invention for 900 nm light can be controlled within 91.5 - 93%, 91.8 - 93%, 92 - 93%, 92.2 - 93%, 92.4 - 93%.

[0046] In an embodiment of the present invention, the spectral transmittance of the light absorption layer of the optoelectronic glass to 900 nm light is ≤2.18%, preferably ≤2.0%, more preferably ≤1.58%. This indicates that the light absorption layer of the optoelectronic glass of the present invention has an extremely low transmittance at a wavelength of 900 nm, can effectively absorb unwanted light, reduce the interference of stray light, and improve the signal-to-noise ratio and contrast of the optical system. This makes the optoelectronic glass of the present invention particularly suitable for applications in fields where it is necessary to reduce stray light interference and improve signal quality, such as the precision optics field, such as industrial cameras and high-end lenses. The light absorption layer with a low absorption rate can improve the purity of the signal and ensure high-precision and high-reliability optoelectronic detection. Further, in some embodiments of the present invention, the spectral transmittance of the light absorption layer of the present invention to 900 nm light can be controlled at 1.2 - 2.18%, 1.2 - 2.0%, 1.2 - 1.86%, 1.2 - 1.57%, 1.2 - 1.5%, 1.2 - 1.4%, 1.2 - 1.33%, 1.2 - 1.3%. The reduction treatment of the present invention is carried out in a reducing atmosphere (such as a hydrogen atmosphere), the time of the reduction treatment is 5000 - 22000 min, the pressure is 0.01 - 0.4 MPa, and the temperature is 550 - 800 °C

[0047] The softening point temperature of the glass can reflect the high-temperature resistance ability of the glass. Specifically, glass with a higher softening point can maintain its shape and mechanical strength in a high-temperature environment without obvious deformation or softening. This indicates that this glass has good stability under high-temperature conditions. This is particularly crucial in space measurement and control and high-temperature industrial environments to ensure the reliable operation of equipment under extreme conditions. And glass with a high softening point usually also has good thermal shock resistance because they are more stable at high temperatures and are not easily broken or damaged due to rapid temperature changes. In addition, a high softening point can improve the durability of the glass, reduce the need for frequent replacement, and help reduce maintenance costs. In an embodiment of the present invention, the softening point temperature of the optoelectronic glass material of the present invention is ≥650 °C, preferably ≥670 °C. This indicates that the present invention has the ability to maintain its physical stability in a high-temperature environment, is not easily deformed or deteriorated, can maintain its structure and performance in a high-temperature environment, and provide reliable and stable functions for a long time. Further, in some embodiments, the softening point of the optoelectronic glass can be controlled at 650 - 680 °C, 658 - 680 °C, 660 - 680 °C, 670 - 680 °C, 664 - 673 °C, 668 - 673 °C, 670 - 673 °C.

[0048] In an embodiment of the present invention, the anti-drop ball impact height of the optoelectronic glass material of the present invention after chemical strengthening is ≥1.3 m, preferably ≥1.5 m. This indicates that the optoelectronic glass treated by chemical strengthening of the present invention has extremely high anti-impact, anti-drop and anti-bending capabilities. This ability helps the optoelectronic glass to withstand frequent physical impacts and mechanical stresses, ensuring its durability and long-term stability during use, and is suitable for use in fields such as optical input windows, low-light night vision devices, and industrial cameras. Further, in some embodiments, the anti-drop ball impact height of the optoelectronic glass material after chemical strengthening can be controlled within 1.3 - 1.6 m, 1.4 - 1.6 m, 1.46 - 1.6 m, 1.5 - 1.6 m, 1.55 - 1.6 m, 1.58 - 1.6 m, 1.38 - 1.58 m. The chemical strengthening of the present invention adopts the chemical ion exchange method, which means that the glass is placed in a salt bath for single or multiple chemical ion exchanges. The salt bath used for ion exchange can be a lithium salt, a sodium salt, a potassium salt, or a mixed molten salt of the three. The temperature of the chemical strengthening (ion exchange) is 380 - 500 °C, and the time is 30 - 800 min.

[0049] The optoelectronic glass of the present invention has comprehensive advantages. The above performance indicators can ensure that the optoelectronic glass material of the present invention can still maintain excellent optical performance and mechanical strength under various extreme conditions as an optical material, thereby improving the overall performance and reliability of the device. At the same time, the combination of high transmittance, low light absorption, high softening point, and high mechanical strength makes the optoelectronic glass material of the present invention perform excellently in a variety of applications and can meet the special needs of different fields. Moreover, the advantages of high strength and high heat resistance of the optoelectronic glass material of the present invention enable it to reduce the frequency of replacement and maintenance during use, reduce the operating cost of the device, and contribute to improving economic efficiency.

[0050] Fifthly, a preparation method for preparing the high-temperature resistant optoelectronic glass material described in the fourth aspect above is provided, which includes:

[0051] Preparing the glass composition described in the first aspect above into a glass blank or using the glass blank described in the second aspect above;

[0052] Mechanically processing the glass blank to obtain a light-transmitting glass substrate;

[0053] Performing a reduction treatment on the light-transmitting glass substrate to form a light absorption layer on its surface;

[0054] Performing a surface treatment on the light absorption layer to make the glass surface have at least one light-transmitting effective area, thereby obtaining the optoelectronic glass material;

[0055] Among them, the preparation method of the glass blank includes: mixing the raw materials, melting at 1560 - 1650 °C, stirring, clarifying, cooling to 1360 - 1480 °C for forming, and annealing at 470 - 600 °C to obtain the glass blank;

[0056] After machining the glass blank, a reduction treatment is carried out to form a light absorption layer on the glass surface;

[0057] The glass with a light absorption layer on the surface is subjected to surface treatment to expose the effective light transmission area;

[0058] Or further carry out chemical strengthening, then the high-temperature resistant optoelectronic glass material or the chemically strengthened high-temperature resistant optoelectronic glass material is obtained.

[0059] The reduction treatment in the present invention is carried out in a reducing atmosphere (such as hydrogen), the time of the reduction treatment is 5000 - 22000 min, the pressure is 0.01 - 0.4 MPa, and the temperature is 550 - 800 °C;

[0060] The chemical strengthening in the present invention adopts the chemical ion exchange method, which means putting the glass into a salt bath for single or multiple chemical ion exchanges. The salt bath used for ion exchange can be a lithium salt, a sodium salt, a potassium salt or a mixed molten salt of the three. The temperature of the chemical strengthening (ion exchange) is 380 - 500 °C, and the time is 30 - 800 min.

[0061] The purpose of the machining in the present invention is mainly to precisely modify the shape, size, surface state, etc. of the glass blank to meet specific application requirements. Such operations include but are not limited to cutting, edge grinding, etc. Appropriate treatment methods can be selected according to needs. For example, the glass blank can be rounded, sliced, etc.

[0062] The surface treatment in the present invention includes but is not limited to grinding, polishing, cutting, polishing, etc. to adjust the surface state of the glass, such as flatness and smoothness, etc. Appropriate treatment methods can be selected according to needs. For example, part of the light absorption layer on the surface can be removed by grinding to expose the effective light transmission area so that the target light can pass through.

[0063] The high-temperature resistant optoelectronic glass material in the present invention can be further processed precisely to obtain the target part.

[0064] The goal of the precision machining in the present invention is to produce parts with precise dimensions, tolerances or surface roughness, and appropriate operations can be selected according to needs.

[0065] The above preparation method of the present invention has process stability, and the glass material prepared by this method can maintain its excellent performance characteristics. Specifically, within the process parameter range described in the present invention (such as temperature, time, pressure, etc.), appropriately adjusting these parameters will not cause significant fluctuations in the glass performance, thus ensuring the consistency and reliability of the product. It should be noted that within the process parameter range disclosed in the present invention, appropriately increasing the temperature can accelerate the process, thereby shortening the preparation time. However, when selecting a higher temperature for operation, those skilled in the art know that it is necessary to comprehensively consider the equipment capacity, energy consumption cost, and control of glass quality to ensure maintaining the excellent performance of the product while improving production efficiency.

[0066] In a sixth aspect, there is provided an optical element made of the glass composition described in the first aspect above or the glass blank described in the second aspect above, or comprising a high-temperature resistant optoelectronic glass material described in the fourth aspect above, and the optical element is an optical input window.

[0067] In a seventh aspect, there is provided the application of the glass composition described in the first aspect above, or the glass blank described in the second aspect above, or a high-temperature resistant optoelectronic glass material described in the fourth aspect above, or made by the preparation method described in the fifth aspect above, or the optical element described in the sixth aspect above in the fields of optoelectronic detection and precision optics, and the application includes but is not limited to being used or functioning in fields such as low-light level night vision, ultraviolet detection, space measurement and control, information display, industrial cameras, and high-end lenses.

[0068] All the specific technical features described in all embodiments of the above aspects of the present invention can be combined in any suitable way without contradiction. To avoid unnecessary repetition, the present invention will not separately describe various possible combination methods.

[0069] Unless otherwise specified, the numerical ranges described in the present invention include all the numerical values within this range, and include the range values composed of any two numerical values within this range. For example, 0 - 0.5%, this numerical range includes all the numerical values between 0 and 0.5, and includes the range values composed of any numerical values within this range (such as 0.01%, 0.2%, 0.49%) (such as 0.01 - 0.49%, 0.01 - 0.2%, 0.2 - 0.49%). Different numerical values of the same index that appear in all embodiments of the present invention can be arbitrarily combined to form range values.

[0070] Through the above one or more technical means, the following beneficial effects can be achieved:

[0071] The present invention provides a high-temperature-resistant optoelectronic glass material, its preparation method and application. This material has excellent spectral transmittance, the spectral transmittance in the effective region is ≥91.5% @900nm, has an effective stray light elimination region, the transmittance of the light absorption layer is ≤2.18% @900nm, a relatively high baking temperature resistance, the softening point temperature is ≥650°C, and has good impact resistance after chemical strengthening, the ball-drop impact resistance is ≥1.3m. It can be used to prepare the optical input window in optical systems and optoelectronic detection systems, and plays an important role in low-light-level night vision, ultraviolet detection, space measurement and control, information display, industrial cameras, high-end lenses, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0072] The specification drawings forming a part of this application are used to provide a further understanding of this application. The schematic embodiments of this application and their descriptions are used to explain this application and do not constitute an improper limitation to this application. Hereinafter, the implementation schemes of this application will be described in detail in conjunction with the drawings, where:

[0073] Figure 1 It shows the comparison chart of the transmittance (@2mm) of the light-transmitting effective region and the transmittance value of the absorption layer (@900nm) of the optoelectronic glass in Examples 1-6 and Comparative Examples 1-7 of the present invention.

[0074] Figure 2 It shows the comparison chart of the softening point temperature value and the ball-drop impact height value of the optoelectronic glass materials in Examples 1-6 and Comparative Examples 1-7 of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0075] The following further elaborates this application in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate this application and not to limit the scope of this application. The experimental methods without specific conditions noted in the following embodiments are generally carried out according to conventional conditions or according to the conditions recommended by the manufacturer.

[0076] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. The reagents or raw materials used in this application can be obtained through conventional channels. Unless otherwise specified, the reagents or raw materials used in this application are used in the conventional manner in this field or according to the product instructions. In addition, any methods and materials similar or equivalent to the recorded content can be applied to the methods of this application. The preferred implementation methods and materials described herein are only for demonstration purposes.

[0077] For the following embodiments of the present invention, unless otherwise specified, the performance of the samples is measured by the following methods or standards:

[0078] The transmittance of the glass sample was measured using a Shimadzu UV-Vis spectrophotometer (UV-3600Plus). The test wavelength range was from 350 nm to 1000 nm. The surface of the tested glass sample was optically polished, and the thickness of the test sample was 2 mm. (GB / T 7962.12-2010).

[0079] The softening point temperature of the glass sample was tested using a Model PPV-1000 / 1200 plate viscometer produced by Orton Corporation. Sample preparation: The glass sample was ground into a cylindrical glass bar with a diameter of Φ6×6 mm, and both end faces were made parallel. The sample was placed between the top and bottom disks, which were made of a heat-resistant metal alloy with a diameter of 44 mm and a thickness of 6 mm. The top metal disk was connected to the bottom of the probe rod. Two very thin platinum films (with a diameter of 40 mm and a thickness of 0.001 inches) were placed between the sample and the top and bottom disks to facilitate sampling and sample placement. (ASTM C-1351M)

[0080] The impact resistance performance was tested using a MK-9968 model 2000 mm falling ball impact tester produced by Dongguan Kema Instrument Equipment Co., Ltd. The specified mass of the steel ball was 60 g. Sample preparation: The glass sample was polished into a wafer with a diameter of Φ23.1×0.6 mm, and both end faces were kept parallel. (GB / T 39814-2021)

[0081] Example 1

[0082] The glass blank of this embodiment was composed of the following components by mass percentage: 60% of SiO 2 、1% of AgO, 20% of Na 2 O, 4% of B 2 O 3 、10% of Al 2 O 3 、2% of ZrO 2 、1% of MgO, 1% of CaO, 1% of CeO 2 .

[0083] Using quartz sand, silver nitrate, sodium carbonate, boric acid, aluminum hydroxide, zirconium oxide, calcium carbonate, basic magnesium carbonate, and cerium oxide as raw materials, after mixing each glass raw material in proportion, the batch material was melted at a high temperature of 1560 °C, assisted by stirring and clarification, formed mechanically at 1360 °C, and annealed at 470 °C to obtain the glass blank.

[0084] The glass blank of this embodiment is processed into thin slices of a certain size, and then in a hydrogen atmosphere, through a reduction process at 15600 min, 0.01 MPa, and 680 °C, a light absorption layer is formed on the glass surface. The glass material with the absorption layer formed on the surface is machined to remove the light absorption layers on the upper and lower surfaces of the thin slice, and the light absorption layer on the side of the thin slice is retained. After chemically strengthening the processed glass thin slice at 480 °C for 400 min (using molten potassium nitrate as the molten salt), the high-temperature-resistant optoelectronic glass material of this embodiment is obtained.

[0085] After testing, in the high-temperature-resistant optoelectronic glass material obtained by the preparation method of this embodiment, the spectral transmittance in the effective area is 91.99% @ 900 nm, the transmittance of the light absorption layer obtained after reduction treatment is 2.04% @ 900 nm, the softening point temperature is 658 °C, and it has good impact resistance after chemical strengthening, with a ball-drop impact resistance of 1.58 m.

[0086] Example 2

[0087] The glass blank of this embodiment is composed of the following components by mass percentage: 54.3% of SiO 2 、3% of AgO, 18% of Na 2 O, 2.5% of K 2 O, 2.5% of B 2 O 3 、14.2% of Al 2 O 3 、1.5% of MgO, 3% of CaO, 1% of CeO 2 .

[0088] Using quartz sand, silver nitrate, sodium nitrate, potassium carbonate, boron oxide, aluminum oxide, magnesium oxide, calcium oxide, and cerium oxide as raw materials, after mixing each glass raw material in proportion, the glass blank and optoelectronic glass material are prepared according to the method of Example 1.

[0089] Test the performance, and the results are shown in Table 2.

[0090] Example 3

[0091] The glass blank of this embodiment is composed of the following components by mass percentage: 55% of SiO 2 、1.5% of AgO, 15% of Na 2 O, 2% of K 2 O, 3.5% of B 2 O 3 、18% of Al 2 O 3 、1% of ZrO 2 、1% of MgO, 1% of CaO, 2% of CeO 2。

[0092] Using quartz sand, silver nitrate, sodium nitrate, potassium carbonate, boron oxide, aluminum oxide, zirconium oxide, magnesium oxide, calcium oxide and cerium oxide as raw materials, after mixing each glass raw material in proportion, prepare a glass blank and an optoelectronic glass material according to the method of Example 1.

[0093] Test the performance, and the results are shown in Table 2.

[0094] Example 4

[0095] The glass blank of this example is composed of the following components by mass percentage: 50% of SiO 2 , 5% of AgO, 10% of Na 2 O, 6% of K 2 O, 5% of B 2 O 3 , 11.5% of Al 2 O 3 , 5% of ZrO 2 , 2% of MgO, 2.5% of CaO, 3% of CeO 2 。

[0096] Using quartz sand, silver nitrate, sodium carbonate, boric acid, aluminum hydroxide, zirconium oxide, calcium carbonate, basic magnesium carbonate and cerium oxide as raw materials, after mixing each glass raw material in proportion, prepare a glass blank and an optoelectronic glass material according to the method of Example 1.

[0097] Test the performance, and the results are shown in Table 2.

[0098] Example 5

[0099] The glass blank of this example is composed of the following components by mass percentage: 52% of SiO 2 , 2% of AgO, 15% of Na 2 O, 3% of K 2 O, 1% of B 2 O 3 , 20% of Al 2 O 3 , 1% of ZrO 2 , 1% of MgO, 2% of CaO, 3% of CeO 2 。

[0100] Using quartz sand, silver nitrate, sodium nitrate, potassium carbonate, boron oxide, aluminum oxide, zirconium oxide, magnesium oxide, calcium oxide and cerium oxide as raw materials, after mixing each glass raw material in proportion, prepare a glass blank and an optoelectronic glass material according to the method of Example 1.

[0101] Test the performance, and the results are shown in Table 2.

[0102] Example 6

[0103] The glass blank of this embodiment is composed of the following components by mass percentage: 58% of SiO 2 、1% of AgO, 12% of Na 2 O, 4% of K 2 O, 1% of B 2 O 3 、17.5% of Al 2 O 3 、1% of ZrO 2 、2% of MgO, 1.5% of CaO, 2% of CeO 2 。

[0104] Using quartz sand, silver nitrate, sodium nitrate, potassium carbonate, boron oxide, aluminum oxide, zirconium oxide, magnesium oxide, calcium oxide and cerium oxide as raw materials, after mixing each glass raw material in proportion, the glass blank and the optoelectronic glass material are prepared according to the method of Example 1.

[0105] Test the performance, and the results are shown in Table 2.

[0106] Comparative Example 1

[0107] The glass material of this comparative example is composed of the following components by mass percentage: 40% of SiO 2 、5% of AgO, 20% of Na 2 O, 10% of B 2 O 3 、10% of Al 2 O 3 、10% of ZrO 2 、5% of CaO.

[0108] For the glass material of this comparative example, using quartz sand, silver nitrate, sodium nitrate, boron oxide, aluminum oxide, zirconium oxide and calcium oxide as raw materials, the glass blank and the optoelectronic glass material are prepared according to the method of Example 1.

[0109] After testing, in the glass material of this comparative example, the spectral transmittance in the effective area is 82.14% @ 900 nm, the transmittance of the light absorption layer obtained after reduction treatment is 5.33% @ 900 nm, the softening point temperature is 557 °C, and it has good impact resistance after chemical strengthening, and the anti-drop ball impact is 0.86 m.

[0110] Comparative Example 2

[0111] The glass material of this comparative example is composed of the following components by mass percentage: 60% of SiO 2 、12% of B 2O 3 and 15% Al 2 O 3 and 3% ZrO 2 and 10% MgO.

[0112] For the glass material of this comparative example, quartz sand, boric acid, aluminum hydroxide, zirconia, and basic magnesium carbonate were used as raw materials, and the glass blank and the optoelectronic glass material were prepared according to the method of Example 1.

[0113] After testing, in the glass material of this comparative example, the spectral transmittance in the effective region was 70.25% @ 900 nm, the transmittance of the light absorption layer obtained after reduction treatment was 58.12% @ 900 nm, the softening point temperature was 663 °C, and it had good impact resistance after chemical strengthening, with a falling ball impact resistance of 0.33 m.

[0114] Comparative Example 3

[0115] The glass material of this comparative example was composed of the following components by mass percentage: 45% SiO 2 and 10% Na 2 O, 20% K 2 O, 15% B 2 O 3 and 1% MgO, 4% CaO, 5% CeO 2 .

[0116] For the glass material of this comparative example, quartz sand, sodium nitrate, potassium carbonate, boron oxide, magnesium oxide, calcium oxide, and cerium oxide were used as raw materials, and the glass blank and the optoelectronic glass material were prepared according to the method of Example 1.

[0117] After testing, in the glass material of this comparative example, the spectral transmittance in the effective region was 78.55% @ 900 nm, the transmittance of the light absorption layer obtained after reduction treatment was 70.21% @ 900 nm, the softening point temperature was 536 °C, and it had good impact resistance after chemical strengthening, with a falling ball impact resistance of 0.42 m.

[0118] Comparative Example 4

[0119] The glass material of this comparative example was composed of the following components by mass percentage: 50% SiO 2 and 1% AgO, 25% Na 2 O, 1% Al 2 O 3 and 6% ZrO 2 and 5% MgO, 10% CaO, 2% CeO 2 .

[0120] In this comparative example, the glass material uses quartz sand, silver nitrate, sodium carbonate, aluminum hydroxide, zirconium oxide, calcium carbonate, basic magnesium carbonate, and cerium oxide as raw materials, and prepares the glass blank and the optoelectronic glass material according to the method of Example 1.

[0121] After testing, in the glass material of this comparative example, the spectral transmittance in the effective area is 82.16% @ 900 nm, the transmittance of the light absorption layer obtained after reduction treatment is 56.37% @ 900 nm, the softening point temperature is 548 °C, and it has good impact resistance after chemical strengthening, with a ball-drop impact resistance of 0.89 m.

[0122] Comparative Example 5

[0123] The glass material of this comparative example is composed of the following components by mass percentage: 60% of SiO 2 、10% of AgO, 15% of K 2 O, 8% of ZrO 2 、5% of MgO, 2% of CaO.

[0124] In this comparative example, the glass material uses quartz sand, silver nitrate, potassium carbonate, zirconium oxide, magnesium oxide, and calcium oxide as raw materials, and prepares the glass blank and the optoelectronic glass material according to the method of Example 1.

[0125] After testing, in the glass material of this comparative example, the spectral transmittance in the effective area is 52.33% @ 900 nm, the transmittance of the light absorption layer obtained after reduction treatment is 4.36% @ 900 nm, the softening point temperature is 599 °C, and it has good impact resistance after chemical strengthening, with a ball-drop impact resistance of 0.55 m.

[0126] Comparative Example 6

[0127] The glass material of this comparative example is composed of the following components by mass percentage: 70% of SiO 2 、1% of AgO, 15% of K 2 O, 5% of ZrO 2 、8% of CaO, 1% of CeO 2 .

[0128] In this comparative example, the glass material uses quartz sand, silver nitrate, sodium carbonate, zirconium oxide, calcium carbonate, and cerium oxide as raw materials, and prepares the glass blank and the optoelectronic glass material according to the method of Example 1.

[0129] After testing, in the glass material of this comparative example, the spectral transmittance in the effective area is 74.35% @ 900 nm, the transmittance of the light absorption layer obtained after reduction treatment is 46.32% @ 900 nm, the softening point temperature is 642 °C, and it has good impact resistance after chemical strengthening, with a ball-drop impact resistance of 0.48 m.

[0130] Comparative Example 7

[0131] This comparative example glass material is composed of the following components by mass percentage: 58% of SiO 2 、1% of AgO, 12% of Na 2 O, 4% of K 2 O, 1% of B 2 O 3 、17.5% of Al 2 O 3 、1% of ZrO 2 、2% of MgO, 1.5% of CaO, 2% of Sb 2 O 3 .

[0132] This comparative example glass material uses quartz sand, silver nitrate, sodium nitrate, potassium carbonate, boron oxide, aluminum oxide, zirconium oxide, magnesium oxide, calcium oxide, and antimony trioxide as raw materials, and prepares glass blanks and optoelectronic glass materials according to the method of Example 1.

[0133] After testing, in this comparative example glass material, the spectral transmittance in the effective area is 88.12% @ 900 nm, the transmittance of the light absorption layer obtained after reduction treatment is 4.53% @ 900 nm, the softening point temperature is 648 °C, and it has good impact resistance after chemical strengthening, with a ball-drop impact resistance of 1.02 m.

[0134] The compositions and properties of the glass samples in Examples 1-6 and Comparative Examples 1-7 of the present invention are shown in Tables 1 and 2 respectively.

[0135] Table 1 Compositions of Glass Samples in Examples 1-6

[0136]

[0137] Table 2 Compositions of Glass Samples in Comparative Examples 1-7

[0138]

[0139]

[0140] Table 3 Performance Test Results of Glass Samples in Examples 1-6

[0141]

[0142] Table 4 Performance Test Results of Glass Samples in Comparative Examples 1-7

[0143]

[0144] As can be seen from the above table and the accompanying drawings, the optoelectronic glass materials of the embodiments of the present invention all have excellent spectral transmittance. The spectral transmittance in the effective region is ≥91.5% @900 nm, and there is an effective stray light elimination region. The transmittance of the light absorption layer is ≤2.18% @900 nm. It has a relatively high baking temperature resistance, with a softening point temperature ≥650 °C. After chemical strengthening, it has good impact resistance, with a ball-drop impact resistance ≥1.3 m, and the spectral transmittance and softening point temperature of the glass before and after chemical strengthening are basically unaffected. It can be used to prepare optical input windows in optical systems and optoelectronic detection systems, and plays an important role in aspects such as low-light level night vision, ultraviolet detection, space measurement and control, information display, industrial cameras, and high-end lenses.

[0145] The foregoing are only the preferred embodiments of the present application and are not intended to limit the present application. Although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments, or perform equivalent substitution on some of the technical features. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A high temperature resistant optoelectronic glass material composition, characterized in that: In terms of mass percentage, it contains or consists of the following components: 50-60% SiO2, 1-5% AgO, 10-20% Na2O, 0-6% K2O, 1-5% B2O3, 10-20% Al2O3, 0-5% ZrO2, 1-2% MgO, 1-3% CaO and 1-3% CeO2.

2. The high temperature resistant optoelectronic glass material composition according to claim 1, characterized in that: In terms of mass percentage, it contains or consists of the following components: 52-60% SiO2, 1-4% AgO, 12-20% Na2O, 0-5% K2O, 1-4% B2O3, 10-20% Al2O3, 0-4% ZrO2, 1-2% MgO, 1-2% CaO and 1-3% CeO2; Preferably, the composition comprises, by mass percentage, 52-60% SiO2, 1-2.9% AgO, 12-18% Na2O, 0-4% K2O, 1-4% B2O3, 10-20% Al2O3, 1-5% ZrO2, 1-2% MgO, 1-2% CaO and 1-3% CeO2; Preferably, its composition comprises, by mass percentage: 52-58% SiO2, 1-2% AgO, 10-15% Na2O, 2-4% K2O, 1-3.5% B2O3, 17-20% Al2O3, 1-1.9% ZrO2, 1-2% MgO, 1-2% CaO and 2-3% CeO2; Preferably, its composition includes, by mass percentage, 55-58% SiO2, 1-1.5% AgO, 12-15% Na2O, 2-4% K2O, 1-3.5% B2O3, 17-18% Al2O3, 1-1.9% ZrO2, 1-2% MgO, 1-1.5% CaO and 2-2.9% CeO2.

3. The high temperature resistant optoelectronic glass material composition according to claim 1 or 2, characterized in that: In terms of mass percentage, the content of SiO2 is 52-60%, preferably 52-58%, more preferably 55-58%; Preferably, the content of AgO is 1-3%, preferably 1-2%, more preferably 1-1.5% by mass; Preferably, the content of Na2O is 12-20% by mass, preferably 12-18%, more preferably 12-15%; Preferably, the content of K2O is 0-5%, preferably 0 or 1-4%, more preferably 2-4%, by mass percentage; Preferably, the content of B2O3 is 1-4%, preferably 1-3.5%, more preferably 1-2%, by mass percentage; Preferably, in terms of mass percentage, the content of Al2O3 is 11.6-20%, preferably 14-20%, more preferably 17-20%, etc.; Preferably, the content of ZrO2 is 0-4%, preferably 0 or 1-4%, more preferably 1-2%, by mass percentage; Preferably, the content of MgO is 1.5-2% by mass; In terms of mass percentage, the content of CaO is 1-2.5%, preferably 1-2%, more preferably 1-1.5% or 1.5-2%; Preferably, the content of CeO2 is 1-2.5% by mass, preferably 1-2% or 2-3%, more preferably 2-2.5%; Preferably, the sum of the contents of Na2O and K2O is 16-20.5%, preferably 16-20%, more preferably 16-18%; Preferably, the content of Na2O is at least 1.5 times the content of K2O, preferably at least 2-7.5 times the content of K2O, more preferably 3-7.5 times the content of K2O; Preferably, the sum of the contents of SiO2 and B2O3 is 53-64%, preferably 53-60%, more preferably 53-59%; Preferably, the content of B2O3 is at least 1.5% of the content of SiO2, preferably 1.5-10% of the content of SiO2, more preferably 1.7-6.5%; Preferably, the sum of the contents of Al2O3 and ZrO2 is 12-21%, preferably 18-21%, more preferably 18-19%; Preferably, the sum of the contents of MgO and CaO is 2-4.5%, preferably 2.5-3.5%, more preferably 2-3.5%; Preferably, the content of CeO2 is 1.5-6% of the total content of SiO2 and B2O3, preferably 1.5-3.5%, and more preferably 3-3.5%.

4. A high temperature resistant optoelectronic glass blank, which is made of the high temperature resistant optoelectronic glass material composition according to any one of claims 1 to 3; Preferably, the method for preparing the high temperature resistant optoelectronic glass blank comprises: The raw materials are uniformly mixed, melted at 1560-1650℃, stirred, clarified, cooled to 1360-1480℃ for molding, and annealed at 470-600℃ to obtain; Preferably, the spectral transmittance of the optoelectronic glass blank to 900nm light is ≥91.5%.

5. A high temperature resistant optoelectronic glass material comprising a light-transmitting substrate glass and a light-absorbing layer; in, The light absorbing layer covers part of the surface of the light-transmitting base glass, dividing the surface of the light-transmitting base glass into a low light-transmitting area and at least one light-transmitting effective area; wherein the light-transmitting effective area is not covered with the light absorbing layer, allowing the target light to pass through; and the low light-transmitting area is covered with the light absorbing layer to absorb or block the target light; The light-transmitting base glass has a composition of the glass composition according to any one of claims 1 to 3, or is made of the glass blank according to claim 4.

6. The high temperature resistant optoelectronic glass material according to claim 5, characterized in that: The absorption layer is formed on the surface of the light-transmitting substrate glass after reduction treatment; Preferably, the spectral transmittance of the light-transmitting effective area to 900nm light is ≥91.5%; Preferably, the spectral transmittance of the light absorbing layer to 900nm light is ≤2.18%; Preferably, the reduction treatment is carried out in a reducing atmosphere, the reduction treatment time is 5000-22000 min, the pressure is 0.01-0.4 MPa, and the temperature is 550-800 °C; Preferably, the softening point temperature of the high temperature resistant photovoltaic glass material is ≥ 650°C; Preferably, the high temperature resistant optoelectronic glass material has a falling ball impact resistance height of ≥1.3 m after chemical strengthening.

7. A method for preparing the high temperature resistant optoelectronic glass material according to claim 5 or 6, comprising: Use the high temperature resistant optoelectronic glass material composition according to any one of claims 1 to 3 to prepare optoelectronic glass blanks or directly use the optoelectronic glass blanks described in claim 4; Mechanically processing the optoelectronic glass blank to obtain a light-transmitting base glass; The light-transmitting substrate glass is then subjected to a reduction treatment to form a light-absorbing layer on its surface; The glass with a light absorption layer formed on the surface is subjected to surface treatment to obtain a high temperature resistant photoelectric glass material; Alternatively, the high temperature resistant optoelectronic glass material is chemically strengthened to obtain a chemically strengthened high temperature resistant optoelectronic glass material; Preferably, the method for preparing optoelectronic glass blanks using the high temperature resistant optoelectronic glass material composition according to any one of claims 1 to 3 comprises: uniformly mixing the raw materials, melting at 1560-1650°C, stirring, clarifying, cooling to 1360-1480°C for forming, and annealing at 470-600°C; Preferably, the reduction treatment is carried out under a reducing atmosphere (such as hydrogen), the reduction treatment time is 5000-22000 min, the pressure is 0.01-0.4 MPa, and the temperature is 550-800 °C; Preferably, the temperature of the chemical strengthening is 380-500° C., and the time is 30-800 min.

8. An optical element, characterized in that: It is made of the high temperature resistant optoelectronic glass material composition according to any one of claims 1 to 3 or the high temperature resistant optoelectronic glass blank according to claim 4, or contains the high temperature resistant optoelectronic glass material according to claim 5 or 6; Preferably, the optical element is an optical input window.

9. Use of the high temperature resistant optoelectronic glass material composition according to any one of claims 1 to 3, or the high temperature resistant optoelectronic glass blank according to claim 4, or the high temperature resistant optoelectronic glass material according to claim 5 or 6, or the optical element according to claim 8 in the field of photoelectric detection and precision optics.

10. The use according to claim 9, characterized in that: The photoelectric detection field and precision optics field include low-light-level night vision, ultraviolet detection, space measurement and control, information display, industrial cameras and high-end lenses.

Images