S / Ka band common aperture antenna and communication equipment

Abstract

The application belongs to the technical field of antennas, and discloses an S / Ka-band common-aperture antenna and communication equipment, which comprises a first dielectric plate and a second dielectric plate stacked from top to bottom; the top surface, the middle and the bottom surface of the first dielectric plate are respectively provided with a rectangular patch array, a first metal through hole and a first metal layer; wherein the rectangular patch array, the first metal through hole and the first metal layer form a magneto-electric dipole antenna array; the magneto-electric dipole antenna array works in the Ka-band and is used for realizing satellite communication; the top surface, the middle and the bottom surface of the second dielectric plate are respectively provided with a second metal layer, a second metal through hole and a third metal layer; wherein the second metal layer, the second metal through hole and the third metal layer form a low-profile monopole antenna; the low-profile monopole antenna works in the S-band and is used for realizing ground equipment communication; the application has a simple structure, can realize different beams and polarization characteristics, effectively improves the space utilization rate of the antenna and has high integration.

Description

Technical Field

[0001] This invention belongs to the field of antenna technology, and specifically relates to an S / Ka band common aperture antenna and communication equipment. Background Technology

[0002] Antennas are important components in communication systems. Among them, common-aperture antennas refer to multiple antennas of different types or independent antennas with different input channels that radiate using the same aperture. With the rapid development of communication technology, how to design and implement multi-band, multi-polarization, and highly integrated common-aperture antennas has become a hot issue that needs to be addressed.

[0003] Taking the vehicle-mounted communication application scenario based on common-aperture antennas as an example, the communication types mainly include satellite communication and mobile communication to meet the communication needs between vehicles and satellites and ground communication equipment (including base stations, nearby vehicles, etc.). In satellite communication scenarios, high-gain circularly polarized unidirectional radiating beam antennas are usually required; while in ground equipment communication scenarios, linearly polarized omnidirectional beams are required to achieve wide spatial coverage. However, the different beam and polarization characteristics between multiple frequency bands bring huge challenges to the design and integration of common-aperture antennas. Existing common-aperture antenna solutions are difficult to achieve different beam and polarization characteristics, and have technical problems of low space utilization and low integration. Summary of the Invention

[0004] To address the technical problems existing in the prior art, this invention provides an S / Ka band common aperture antenna and communication device, which solves the technical problems of existing common aperture antenna schemes being unable to achieve different beam and polarization characteristics, and having low space utilization and integration.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] This invention provides an S / Ka band common aperture antenna, comprising a first dielectric substrate and a second dielectric substrate stacked from top to bottom;

[0007] The top, middle, and bottom surfaces of the first dielectric substrate are respectively provided with a rectangular patch array, a first metal via, and a first metal layer; wherein, the rectangular patch array, the first metal via, and the first metal layer form a magnetoelectric dipole antenna array; the magnetoelectric dipole antenna array operates in the Ka band and is used to realize satellite communication;

[0008] The top, middle, and bottom surfaces of the second dielectric substrate are respectively provided with a second metal layer, a second metal via, and a third metal layer; wherein, the second metal layer, the second metal via, and the third metal layer form a low-profile monopole antenna; the low-profile monopole antenna operates in the S-band and is used to realize communication of ground equipment.

[0009] Furthermore, the rectangular patch array comprises 16 identical patch units arranged periodically in a 4×4 array; wherein each patch unit comprises four radiating patches and a feeding patch arranged in a 4×4 array, the feeding patch being located in the middle of the four radiating patches;

[0010] The first metal via includes a first short-circuit via and a first power supply via; the first short-circuit via is disposed below the radiating patch, and the first power supply via is disposed below the power supply patch.

[0011] A first circular gap is provided on the first metal layer, and the first circular gap is provided corresponding to the first power supply through hole.

[0012] Furthermore, a second circular slot is provided on the second metal layer, and the second circular slot is provided corresponding to the first power supply through hole; wherein, the outer ring of the four second circular slots located in the center is provided with a first annular slot, and the outer ring of the twelve second circular slots located on the outside is provided with a first C-shaped slot; the first C-shaped slots located at the four corners face the corners of the adjacent second metal layer, and the remaining first C-shaped slots face the edges of the adjacent second metal layer;

[0013] The second metal via includes a first low-frequency feed via, a first high-frequency feed via, a first low-frequency short-circuit via, and a first high-frequency short-circuit via; the first low-frequency feed via is located at the center of the second dielectric substrate; the first high-frequency feed via is correspondingly located to the first feed via; the first low-frequency short-circuit via is located between the twelve second circular slots located on the outer side; the first high-frequency short-circuit via is located between the second circular slots and the first annular slot, and between the second circular slots and the first C-shaped slot;

[0014] The third metal layer has a third circular slit at its center and a fourth circular slit at the corresponding position of the first high-frequency feed via. The four fourth circular slits at the center have a second annular slit around their outer rings, and the twelve fourth circular slits on the outer side have a second C-shaped slit around their outer rings. The second C-shaped slits at the four corners face the corners of the adjacent third metal layer, and the remaining second C-shaped slits face the edges of the adjacent third metal layer.

[0015] Furthermore, a third medium plate is provided below the second medium plate;

[0016] The top, middle, and bottom surfaces of the third dielectric substrate are respectively provided with a fourth metal layer, a third metal via, and a microstrip structure; wherein the fourth metal layer, the third metal via, and the microstrip structure form an S / Ka band feed network.

[0017] Furthermore, a fifth circular slit is provided at the center of the fourth metal layer, and a sixth circular slit is provided at the corresponding position of the first high-frequency power feeding via in the fourth metal layer.

[0018] The third metal via includes a second low-frequency feed via, a second high-frequency feed via, and a second high-frequency short-circuit via; the second low-frequency feed via is located at the center of the third dielectric substrate; the second high-frequency feed via is corresponding to the first high-frequency feed via; the second high-frequency short-circuit via is located inside the outer two rows of second high-frequency feed vias and outside the inner two rows of second high-frequency feed vias.

[0019] The microstrip structure includes a low-frequency feed structure, a low-frequency matching stub, a high-frequency power distribution structure, and a high-frequency matching stub. The low-frequency feed structure is located at the central axis of the third dielectric substrate, with one end near the outer edge of the third dielectric substrate serving as an energy input port, and the other end connected to a second low-frequency feed via. The low-frequency matching stub is located on the low-frequency feed structure, near the energy input port. The high-frequency power distribution structure is symmetrically arranged with reference to the two central axes of the third dielectric substrate, and its output end is connected to the second high-frequency feed via. One end of the high-frequency matching stub is connected to the second high-frequency short-circuit via, and the other end is connected to an adjacent high-frequency power distribution structure.

[0020] Furthermore, the first metal layer has eight first L-shaped slots at its edge, and the eight first L-shaped slots are symmetrically arranged along the central axis of the first dielectric plate; the fourth metal layer has eight second L-shaped slots at its edge, and the eight second L-shaped slots are symmetrically arranged along the central axis of the third dielectric plate.

[0021] Furthermore, it also includes a first adhesive plate and a second adhesive plate; the first adhesive plate is disposed between the first medium plate and the second medium plate, and the second adhesive plate is disposed between the second medium plate and the third medium plate.

[0022] Furthermore, the first adhesive plate is provided with a fourth metal through hole, and the second adhesive plate is provided with a fifth metal through hole and a sixth metal through hole; the first power supply through hole, the first high-frequency power supply through hole, the second high-frequency power supply through hole, the fourth metal through hole and the fifth metal through hole are located on the same vertical line; the sixth metal through hole and the second low-frequency power supply through hole are located on the same vertical line.

[0023] Furthermore, in each patch unit, the lengths of two adjacent radiating patches are different, and the lengths of two diagonally arranged radiating patches are the same.

[0024] The present invention also provides a communication device, the communication device including the aforementioned S / Ka band common aperture antenna.

[0025] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0026] The S / Ka band common-aperture antenna provided by this invention forms a magnetoelectric dipole antenna array operating in the Ka band by means of rectangular patch arrays, first metal vias, and a first metal layer disposed on the top, middle, and bottom surfaces of a first dielectric substrate. This achieves circularly polarized, high-gain, and unidirectional electromagnetic waves in the Ka band, thereby meeting the demand for circularly polarized pencil-beam antennas in satellite communication scenarios. Furthermore, a low-profile monopole antenna operating in the S band is formed by means of a second metal layer, a second metal via, and a third metal layer disposed on the top, middle, and bottom surfaces of a second dielectric substrate. This achieves vertically polarized and omnidirectional electromagnetic waves in the S band, thereby meeting the demand for linearly polarized omnidirectional beam antennas capable of achieving wide spatial coverage in ground equipment communication scenarios. This invention has a simple structure, can achieve different beam and polarization characteristics, effectively improves the antenna's space utilization, and has high integration.

[0027] Furthermore, in the magnetoelectric dipole antenna array, the rectangular patch array adopts a 4×4 array of periodically arranged patch units. Each patch unit adopts a combination structure of four radiating patches and feed patches. A first circular slot corresponding to the first feed via is set on the first metal layer, and a first short-circuit via is set below the radiating patch to form a circularly polarized high-gain antenna array suitable for the Ka band.

[0028] Furthermore, in the low-profile monopole antenna operating in the S-band, the short-circuit post structure of the S-band antenna is replaced with the coaxial feed structure of the Ka-band array antenna, and the entire S-band antenna structure is reused as the metal ground plane of the Ka-band array antenna, thereby achieving a high degree of integration and antenna miniaturization.

[0029] Furthermore, by using two pairs of unequal-length metal patch structures as electric dipoles for the magnetoelectric dipole antenna, high-gain circularly polarized beam characteristics were achieved. Attached Figure Description

[0030] Figure 1 This is a schematic diagram of the overall structure of the S / Ka band common aperture antenna provided in Example 1;

[0031] Figure 2 This is a schematic diagram of the structure of the first dielectric substrate in Example 1; wherein, attached... Figure 2 The diagram shows, from left to right, a rectangular patch array, a first metal via, and a second metal layer.

[0032] Figure 3This is a schematic diagram of the structure of the second dielectric substrate in Example 1; wherein, attached... Figure 3 The diagram shows the structure of the second metal layer, the second metal via, and the third metal layer from left to right.

[0033] Figure 4 This is a schematic diagram of the structure of the third dielectric substrate in Example 1; wherein, attached... Figure 4 The diagram shows, from left to right, the fourth metal layer, the third metal via, and the microstrip structure.

[0034] Figure 5 This is a schematic diagram of the structure of the first adhesive plate in Example 1;

[0035] Figure 6 This is a schematic diagram of the structure of the second adhesive plate in Example 1;

[0036] Figure 7 The diagram shows the return loss and port coupling coefficient of the S / Ka band co-aperture antenna provided in Example 1 in the S band.

[0037] Figure 8 The gain and efficiency curves of the S / Ka band common aperture antenna provided in Example 1 are shown in the S band.

[0038] Figure 9 The far-field radiation patterns of the S / Ka band co-aperture antenna provided in Example 1 are shown in the 3.5 GHz, φ=0° and θ=40° cross-sections; wherein, Figure 9 a is the far-field radiation pattern of the S / Ka band co-aperture antenna at 3.5 GHz with φ=0° cross section; Figure 9 b is the far-field radiation pattern of the S / Ka band co-aperture antenna at a cross section of 3.5 GHz and φ=40°.

[0039] Figure 10 The return loss diagram of the S / Ka band common aperture antenna provided in Example 1 in the Ka band;

[0040] Figure 11 The gain and circular polarization axial ratio diagram of the S / Ka band common aperture antenna provided in Example 1 in the Ka band;

[0041] Figure 12 The far-field radiation patterns of the S / Ka band co-aperture antenna provided in Example 1 are shown in the 27 GHz and 29 GHz sections at φ=0° and φ=90°. Figure 12 a is the far-field radiation pattern of the S / Ka band co-aperture antenna at 27 GHz with φ=0° cross section; Figure 12 b is the far-field radiation pattern of the S / Ka band co-aperture antenna at 29 GHz with φ=0° cross section; Figure 12c represents the far-field radiation pattern of the S / Ka band co-aperture antenna at 27 GHz with a cross section of φ=90°. Figure 12 d represents the far-field radiation pattern of the S / Ka band co-aperture antenna at 29 GHz with a cross section of φ=90°.

[0042] The components include: 1 first dielectric substrate, 2 second dielectric substrate, 3 third dielectric substrate, 4 first adhesive substrate, 5 second adhesive substrate; 11 rectangular patch array, 12 first metal via, 13 first metal layer; 111 radiating patch, 112 power feeding patch; 121 first short-circuit via, 122 first power feeding via; 131 first circular slot, 132 first L-shaped slot; 21 second metal layer, 22 second metal via, 23 third metal layer; 211 second circular slot, 212 first annular slot, 213 first C-shaped slot; 221 first low-frequency power feeding via, 222 first high-frequency power feeding via, 223 first low-frequency short-circuit via. 224 First high-frequency short-circuit via; 231 Third circular slot; 232 Fourth circular slot; 233 Second annular slot; 234 Second C-shaped slot; 31 Fourth metal layer; 32 Third metal layer; 33 Microstrip structure; 311 Fifth circular slot; 312 Sixth circular slot; 313 Second L-shaped slot; 321 Second low-frequency feed via; 322 Second high-frequency feed via; 323 Second high-frequency short-circuit via; 331 Low-frequency feed structure; 332 Low-frequency matching stub; 333 High-frequency power distribution structure; 334 High-frequency matching stub; 41 Fourth metal via; 51 Fifth metal via; 52 Sixth metal via. Detailed Implementation

[0043] To make the technical problems solved by the present invention, the technical solutions, and the beneficial effects clearer, the following specific embodiments provide a further detailed description of the present invention. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of the invention.

[0044] Example 1

[0045] As attached Figure 1 As shown, this embodiment 1 provides an S / Ka band common aperture antenna, including a first dielectric substrate 1, a second dielectric substrate 2, and a third dielectric substrate 3 stacked from top to bottom; a first adhesive plate 4 is also provided between the first dielectric substrate 1 and the second dielectric substrate 2, and the first adhesive plate 4 is used to connect the first dielectric substrate 1 and the second dielectric substrate 2 together; a second adhesive plate 5 is also provided between the second dielectric substrate 2 and the third dielectric substrate 3, and the second adhesive plate 5 is used to connect the second dielectric substrate 2 and the third dielectric substrate 3 together.

[0046] As attached Figure 1 , 2As shown, a rectangular patch array 11, a first metal through-hole 12, and a first metal layer 13 are respectively disposed on the top surface, middle surface, and ground surface of the first dielectric substrate 1. Specifically, the rectangular patch array 11 is disposed on the top surface of the first dielectric substrate 1; the first metal through-hole 12 is disposed through the first dielectric substrate 1 along the thickness direction to connect the rectangular patch array 11 and the first metal patch 13; the first metal layer 13 is disposed on the bottom surface of the first dielectric substrate 1; the rectangular patch array 11, the first metal through-hole 12, and the first metal layer 13 form a magnetoelectric dipole antenna array; wherein, the magnetoelectric dipole antenna array operates in the Ka band and is used to radiate high-gain circularly polarized electromagnetic waves to realize satellite communication.

[0047] The rectangular patch array 11 comprises 16 identical patch units, which are arranged periodically in a 4×4 array. Each patch unit includes four radiating patches 111 and a feed patch 112. The four radiating patches 111 are arranged in a 4×4 array, and the feed patch 112 is located in the middle of the four radiating patches 111. In each patch unit, the lengths of two adjacent radiating patches 111 are different, and the lengths of two diagonally opposite radiating patches 111 are the same. Specifically, in each patch unit, the radiating patch located at the upper left corner and the radiating patch located at the lower right corner are the same size, and the radiating patch located at the upper right corner and the radiating patch located at the lower left corner are the same size. That is, two pairs of unequal-length metal patch structures are used as the electric dipoles of the magnetoelectric dipole antenna to achieve high-gain circularly polarized beam characteristics.

[0048] The first metal via 12 includes a first short-circuit via 121 and a first power supply via 122. The first short-circuit via 121 is disposed below the radiating patch 111, and the first power supply via 122 is disposed below the power supply patch 112. The first short-circuit via 121 is used to connect the radiating patch 111 and the first metal layer 13, and the first power supply via 122 is used to connect the power supply patch 112 and the first metal layer 13.

[0049] The first metal layer 13 is a rectangular metal layer structure disposed on the bottom surface of the first dielectric substrate 1; a first circular slot 131 is disposed on the first metal layer 13, and the first circular slot 131 is disposed vertically corresponding to the first feed via 122; wherein, the first circular slot 131 is used to enable the first feed via 122 to communicate with the corresponding structure in the second dielectric substrate 2; eight first L-shaped slots 132 are disposed at the edge of the first metal layer 13, and the eight first L-shaped slots 132 are symmetrically arranged along the central axis of the first dielectric substrate 1; wherein, the first L-shaped slots 132 are used to suppress patch resonance mode, that is, to suppress the coupling between the magnetoelectric dipole antenna array and the low-profile monopole antenna caused by the multiplexing structure; specifically, two first L-shaped slots 132 are disposed on each side of the first metal layer 13, the two first L-shaped slots 132 on the same side are symmetrical about the central axis of the first dielectric substrate 1, and the two first L-shaped slots 132 on opposite sides are symmetrical about the central axis of the first dielectric substrate 1.

[0050] In this embodiment 1, the radiating patch 111 is configured as two pairs of metal patch structures of unequal length, that is, the two pairs of metal patch structures of unequal length serve as the electric dipoles of the magnetoelectric dipole antenna, so that the improved magnetoelectric dipole antenna can radiate circularly polarized waves and effectively control the size of the antenna element, making it suitable for forming a Ka-band circularly polarized high-gain antenna array; using the two pairs of metal patch structures of unequal length as the electric dipoles of the magnetoelectric dipole antenna achieves high-gain circularly polarized beam characteristics; secondly, the coaxial feeding structure based on the first metal through-hole 12 can effectively solve the problems of complex feeding and low integration of common aperture antennas.

[0051] It should be noted that the physical dimensions and relative positions of the radiating patch 111, the feeding patch 112, the first short-circuit via 121, and the first feeding via 122 are matched with the performance of the magnetoelectric dipole antenna array. That is, the physical dimensions and relative positions of the radiating patch 111, the feeding patch 112, the first short-circuit via 121, and the first feeding via 122 can determine the performance of the magnetoelectric dipole antenna array. The performance of the magnetoelectric dipole antenna array includes its radiation pattern, gain, impedance matching, and axial ratio.

[0052] As attached Figure 1 , 3As shown, the top, middle, and bottom surfaces of the second dielectric substrate 2 are respectively provided with a second metal layer 21, a second metal through-hole 22, and a third metal layer 23. Specifically, the second metal layer 21 is disposed on the top surface of the second dielectric substrate 2, and the second metal through-hole 22 is disposed through the thickness direction of the second dielectric substrate 2 to connect the second metal layer 21 and the third metal layer 23. The third metal layer 23 is disposed on the bottom surface of the second dielectric substrate 2. The second metal layer 21, the second metal through-hole 22, and the third metal layer 23 form a low-profile monopole antenna. The low-profile monopole antenna operates in the S-band and can radiate omnidirectional vertically polarized electromagnetic waves by simultaneously exciting the TM01 and TM02 electromagnetic modes to realize communication of ground equipment.

[0053] The second metal layer 21 is a rectangular metal layer structure disposed on the top surface of the second dielectric substrate 2; the second metal layer 2 has 16 second circular slots 211, which are arranged periodically in a 4×4 array and correspond to the first power supply via 122; that is, the second metal layer 21 has second circular slots 211 at the corresponding positions of the first power supply via 122; wherein, the outer ring of the four second circular slots 211 located in the center is provided with a first annular slot 212, and the outer twelve second circular slots are provided with a first annular slot 212. The outer ring of the circular slot 211 is provided with a first C-shaped slot 213; the first C-shaped slots 213 located at the four corners face the corners of the adjacent second metal layer 21, and the remaining first C-shaped slots 213 face the edges of the adjacent second metal layer 21; it should be noted that the second circular slot 211 is used to realize the connection between the first feed via 122 and the lower structure, the first annular slot 212 is used to improve the isolation between the Ka-band antenna and the S-band antenna, and the first C-shaped slot 213 is used to improve the impedance matching and radiation performance of the S-band antenna.

[0054] The second metal via 22 includes a first low-frequency feed via 221, a first high-frequency feed via 222, a first low-frequency short-circuit via 223, and a first high-frequency short-circuit via 224. The first low-frequency feed via 221 is located at the center of the second dielectric substrate 2 and is used to provide power input for the S-band antenna. The first low-frequency short-circuit via 223 is located between the twelve second circular slots 211 on the outer side and is used to optimize the impedance matching and omnidirectional radiation performance of the S-band antenna. Specifically, among the twelve second circular slots 211 on the outer side, adjacent second circular slots 211 are... A first low-frequency short-circuit via 223 is provided; the first high-frequency short-circuit via 224 is provided between the second circular slot 211 and the first annular slot 212 and between the second circular slot 211 and the first C-shaped slot 213. The first high-frequency short-circuit via 224 is used to isolate the feeding structure of the S-band antenna and the Ka-band antenna, thereby optimizing the performance of the magnetoelectric dipole antenna array and the low-profile monopole antenna; specifically, the first high-frequency short-circuit via 224 is arranged in a ring array between the first circular slot 221 and the first annular slot 212 and between the first circular slot 221 and the first C-shaped slot 213.

[0055] The third metal layer 23 is a rectangular metal layer structure disposed on the bottom surface of the second dielectric substrate 2; a third circular slot 231 is disposed at the center of the third metal layer 23, and the third circular slot 231 is used to connect the first low-frequency feed via 221 to the lower structure; the third metal layer 23 is also provided with 16 fourth circular slots 232, which are arranged periodically in a 4×4 array and are corresponding to the first high-frequency feed via 222; that is, the third metal layer 23 is provided with fourth circular slots 232 at the corresponding positions of the first high-frequency feed via 222; wherein, the four fourth circular slots located at the center are... The outer ring of the circular slot 232 is provided with a second annular slot 233, and the outer ring of the twelve fourth circular slots 232 located on the outside is provided with a second C-shaped slot 234; the second C-shaped slots 234 located at the four corners face the corners of the adjacent third metal layer 23, and the remaining second C-shaped slots 234 face the edges of the adjacent third metal layer 23; it should be noted that the fourth circular slot 232 is used to realize the connection between the first high-frequency feed via 222 and the lower structure, the second annular slot 233 is used to improve the isolation between the Ka-band antenna and the S-band antenna, and the second C-shaped slot 234 is used to improve the impedance matching and radiation performance of the S-band antenna.

[0056] In this embodiment 1, a low-profile monopole antenna operating in the S-band is formed by a second metal layer 21, a second metal via 22, and a third metal layer 23 disposed on the top, middle, and bottom surfaces of the second dielectric substrate 2. This achieves an S-band square low-profile monopole patch antenna. The antenna is generated by exciting the TM of the second metal layer 21. 01 and TM 02 The resonant mode achieves omnidirectional radiation similar to that of a monopole antenna; and due to the use of a metal patch as the radiator, the antenna has a low profile. Specifically, the short-circuit post structure of the S-band antenna is reused as the coaxial feed structure of the Ka-band array antenna, and the entire structure of the S-band antenna is reused as the metal ground plane of the Ka-band array antenna. The two antennas operating in different frequency bands share the same structure, reducing the redundant structure of the antenna, improving space utilization, and thus achieving a high degree of integration and antenna miniaturization.

[0057] As attached Figure 1 , 4 As shown, the top, middle, and bottom surfaces of the third dielectric substrate 3 are respectively provided with a fourth metal layer 31, a third metal via 32, and a microstrip structure 33; specifically, the fourth metal layer 31 is disposed on the top surface of the third dielectric substrate 3; the third metal via 32 is disposed through the third dielectric substrate 3 along its thickness direction to connect the fourth metal layer 31 and the microstrip structure 33; the microstrip structure 33 is disposed on the bottom surface of the third dielectric substrate 3; wherein, the fourth metal layer 31, the third metal via 32, and the microstrip structure 33 form an S / Ka band feed network.

[0058] The fourth metal layer 31 is a rectangular metal layer structure disposed on the top surface of the third dielectric substrate 1; a fifth circular slot 311 is disposed at the center of the fourth metal layer 31, the fifth circular slot 311 being used to connect the first low-frequency feed via 221 to the lower structure; the fourth metal layer 31 is also provided with 16 sixth circular slots 312, the 16 sixth circular slots 312 being arranged periodically in a 4×4 array and corresponding to the first high-frequency feed via 222; that is, the fourth metal layer 31 is provided with a sixth circular slot 312 at the corresponding position of the first high-frequency feed via 222; wherein, the sixth circular slot 312 is used to connect the first high-frequency feed via 222 to the lower structure. The feed via 222 is connected to the lower structure; eight second L-shaped slots 313 are provided at the edge of the fourth metal layer 31, and the eight second L-shaped slots 313 are symmetrically arranged along the central axis of the third dielectric substrate 3; wherein, the second L-shaped slots 313 are used to suppress patch resonance mode, that is, to suppress the coupling between the magnetoelectric dipole antenna array and the low-profile monopole antenna caused by the multiplexing structure; specifically, two second L-shaped slots 313 are provided on each side of the fourth metal layer 31, the two second L-shaped slots 313 on the same side are symmetrical about the central axis of the third dielectric substrate 3, and the two second L-shaped slots 313 on opposite sides are symmetrical about the central axis of the third dielectric substrate 3.

[0059] The third metal via 32 includes a second low-frequency feed via 321, a second high-frequency feed via 322, and a second high-frequency short-circuit via 323. The second low-frequency feed via 321 is located at the center of the third dielectric substrate 3 and is used to input electromagnetic energy to the S-band fully polarized antenna. The second high-frequency feed via 322 is correspondingly arranged to the first high-frequency feed via 222 and is used to input electromagnetic energy to the Ka-band antenna. The second high-frequency short-circuit via 323 is located inside the outer two columns of the second high-frequency feed via 322 and outside the inner two columns of the second high-frequency feed via 322. The second high-frequency short-circuit via 323 is used to improve the impedance matching level of the high-frequency power distribution structure 333.

[0060] The microstrip structure 33 includes a low-frequency feed structure 331, a low-frequency matching stub 332, a high-frequency power distribution structure 333, and a high-frequency matching stub 334. The low-frequency feed structure 331 is located at the central axis of the third dielectric substrate 3 and is used to input electromagnetic energy to the S-band antenna. One end of the low-frequency feed structure 331 near the outer edge of the third dielectric substrate 3 serves as an energy input port, and the other end is connected to the second low-frequency feed via 321. The low-frequency matching stub 332 is disposed on the low-frequency feed structure 331 and located near the energy input port. The low-frequency matching stub 332 is used for... The impedance matching level of the S-band antenna is improved; the high-frequency power distribution structure 333 is symmetrically arranged with reference to the two central axes of the third dielectric substrate 3, and the output end of the high-frequency power distribution structure 333 is connected to the second high-frequency feed via 322; wherein, the high-frequency power distribution structure 333 is used to equally divide the electromagnetic energy input to the port into 16 parts, thereby providing energy for the Ka-band array antenna; one end of the high-frequency matching stub 334 is connected to the second high-frequency short-circuit via 323, and the other end of the high-frequency matching stub 334 is connected to the adjacent high-frequency power distribution structure 333; wherein, the high-frequency matching stub 334 improves the impedance matching level of the high-frequency power distribution structure 333.

[0061] In this invention, the coaxial feed structure in a magnetoelectric dipole antenna array operating in the Ka-band is reused as a short-circuit post structure for a low-profile monopole antenna operating in the S-band, assisting the S-band antenna in exciting the TM. 01 and TM 02 The resonant mode expands the bandwidth of the S-band antenna. Simultaneously, by strategically arranging the second metal via 22 and the holes on the second metal layer 21 and the third metal layer 23, energy leakage is shielded, achieving efficient feeding of the Ka-band feed network. Two antennas operating in different frequency bands share the same structure, reducing antenna redundancy, improving space utilization, and thus achieving high integration and antenna miniaturization.

[0062] As attached Figure 1 , 5 As shown, the first adhesive plate 4 is provided with 16 fourth metal through holes 41, and the 16 fourth metal through holes 41 are arranged periodically in a 4×4 array; wherein, the fourth metal through holes 41 are provided through along the thickness direction of the first adhesive plate 4, and the fourth metal through holes 41 are used to connect the high-frequency feeding structure of the upper and lower layers.

[0063] As attached Figure 1 , 6As shown, the second adhesive plate 5 is provided with 16 fifth metal through holes 51, which are arranged periodically in a 4×4 array; wherein, the fifth metal through holes 51 are provided through the thickness direction of the second adhesive plate 5, and the fifth metal through holes 51 are used to connect the high-frequency feeding structure of the upper and lower layers; a sixth metal through hole 52 is also provided at the center of the second adhesive plate 5, which is used to connect the low-frequency feeding structure of the upper and lower layers.

[0064] It should be noted that the first power supply through-hole 122, the first high-frequency power supply through-hole 222, the second high-frequency power supply through-hole 322, the fourth metal through-hole 41 and the fifth metal through-hole 51 are located on the same vertical line; the sixth metal through-hole 52 and the second low-frequency power supply through-hole 321 are located on the same vertical line.

[0065] In this embodiment 1, eight first L-shaped slots 132 are provided at the edge of the first metal layer 13, and eight second L-shaped slots 313 are provided at the edge of the fourth metal layer 31. The first L-shaped slots 132 and the second L-shaped slots 313 are used to suppress patch resonance modes, that is, to suppress the coupling between the magnetoelectric dipole antenna array and the low-profile monopole antenna caused by the multiplexing structure, thereby improving the isolation between the magnetoelectric dipole antenna array and the low-profile monopole antenna and ensuring the performance of the antenna in the Ka-band and S-band. The first annular slot 212, the first high-frequency short-circuit via 224 and the second annular slot 233 are used to reduce the influence of the high-frequency feeding structure on the low-frequency resonance mode. The two work together to maintain the impedance matching and radiation pattern of the low-profile monopole antenna.

[0066] In this embodiment 1, the first low-frequency short-circuit via 223 is used to adjust the impedance matching and radiation pattern of the low-profile monopole antenna; the first C-shaped slot 213 and the second C-shaped slot 234 enable the reuse of part of the high-frequency short-circuit via 224 structure, so that it has a similar function to the first low-frequency short-circuit via 223.

[0067] As attached Figure 7 As shown, attached Figure 7 The figure shows the return loss and port coupling coefficient of the S / Ka band co-aperture antenna in the S band; from the appendix Figure 7 As can be seen, two resonance peaks can be observed near 3.42 GHz and 3.57 GHz; S11< The impedance bandwidth of 10dB is approximately 260MHz; ranging from 3.37GHz to 3.63GHz, the antenna achieves sufficient bandwidth to meet the needs of general communication scenarios; throughout the entire operating frequency band, S21 remains below -15dB, demonstrating that the high- and low-frequency antenna structure provides good isolation in the S-band.

[0068] As attached Figure 8 As shown, attached Figure 8 The figure shows the gain and efficiency curves of the S / Ka band co-aperture antenna in the S band; from the appendix Figure 8 As can be seen, the antenna gain in the S-band is 3.8-4.2 dBi; at the same time, the antenna's radiation efficiency reaches over 75% across the entire operating frequency band.

[0069] As attached Figure 9 As shown, attached Figure 9 The image shows the far-field radiation patterns of an S / Ka band co-aperture antenna at 3.5 GHz, with φ=0° and θ=40° cross-sections; among them, Figure 9 a is the far-field radiation pattern of the S / Ka band co-aperture antenna at 3.5 GHz with φ=0° cross section; Figure 9 b is the far-field radiation pattern of the S / Ka band co-aperture antenna at a cross-section of 3.5 GHz and φ=40°; from the attached... Figure 9 As can be seen, the antenna's radiation pattern in the S-band is an omnidirectional beam, with a minimum value in the normal direction and a maximum value in the lateral direction.

[0070] As attached Figure 10 As shown, attached Figure 10 The diagram shows the return loss of an S / Ka band co-aperture antenna in the Ka band; from the appendix... Figure 10 As can be seen from this, the antenna in the Ka band S11< The impedance bandwidth of 10dB is approximately 11.3GHz; ranging from 22.9GHz to 34.2GHz, the antenna covers the Ka-band frequency band used for satellite communication, and can meet the needs of satellite communication.

[0071] As attached Figure 11 As shown, attached Figure 11 The figure shows the gain and circular polarization axial ratio of the S / Ka band co-aperture antenna in the Ka band; from the appendix... Figure 11 As can be seen, the antenna has an average gain of about 17 dBi and a maximum gain of about 19 dB within the Ka-band operating frequency band; the 3 dB axial ratio bandwidth is 7 GHz, ranging from 26.5 GHz to 33.5 GHz.

[0072] As attached Figure 12 As shown, attached Figure 12 The image shows the far-field radiation patterns of the S / Ka band co-aperture antenna at 27 GHz and 29 GHz, with cross-sections of φ=0° and φ=90°; among them, Figure 12 a is the far-field radiation pattern of the S / Ka band co-aperture antenna at 27 GHz with φ=0° cross section; Figure 12 b is the far-field radiation pattern of the S / Ka band co-aperture antenna at 29 GHz with φ=0° cross section; Figure 12c represents the far-field radiation pattern of the S / Ka band co-aperture antenna at 27 GHz with a cross section of φ=90°. Figure 12 d represents the far-field radiation pattern of the S / Ka band co-aperture antenna at 29 GHz, with a cross-section of φ=90°; from the attached... Figure 12 As can be seen, in the radiation patterns of the antenna in the two sections φ=0 and φ=90, the level of its first sidelobe is less than -15dB; the radiation pattern exhibits high-gain pencil beam characteristics.

[0073] Example 2

[0074] This embodiment 2 provides a communication device for realizing satellite communication and ground equipment communication; for example, the communication device is a vehicle; wherein, the communication device includes the S / Ka band common aperture antenna described in embodiment 1 above; for details of the S / Ka band common aperture antenna, please refer to the description of embodiment 1 above, and it will not be repeated here.

[0075] The S / Ka band common-aperture antenna of this invention forms a magnetoelectric dipole antenna array operating in the Ka band by means of rectangular patch arrays, first metal vias, and a first metal layer disposed on the top, middle, and bottom surfaces of a first dielectric substrate, and a low-profile monopole antenna operating in the S band by means of a second metal layer, a second metal via, and a third metal layer disposed on the top, middle, and bottom surfaces of a second dielectric substrate. This allows the antenna to achieve vertical polarization and omnidirectional electromagnetic wave radiation in the S band, thereby meeting the demand for linearly polarized omnidirectional beam antennas capable of achieving wide spatial coverage in ground equipment communication scenarios. At the same time, it can achieve circularly polarized, high-gain, and unidirectional electromagnetic wave radiation in the Ka band, thereby meeting the demand for circularly polarized pencil beam antennas capable of achieving circular polarization in satellite communication scenarios.

[0076] The above embodiments are merely one of the implementation methods for achieving the technical solution of the present invention. The scope of protection claimed by the present invention is not limited to this embodiment, but also includes any variations, substitutions and other implementation methods that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention.

Claims

1. An S / Ka band common-aperture antenna, characterized in that, Includes a first dielectric plate (1) and a second dielectric plate (2) stacked from top to bottom; The top, middle and bottom surfaces of the first dielectric substrate (1) are respectively provided with a rectangular patch array (11), a first metal via (12) and a first metal layer (13); wherein the rectangular patch array (11), the first metal via (12) and the first metal layer (13) form a magnetoelectric dipole antenna array; the magnetoelectric dipole antenna array operates in the Ka band and is used to realize satellite communication; The top, middle and bottom surfaces of the second dielectric substrate (2) are respectively provided with a second metal layer (21), a second metal through hole (22) and a third metal layer (23); wherein the second metal layer (21), the second metal through hole (22) and the third metal layer (23) form a low-profile monopole antenna; the low-profile monopole antenna operates in the S-band and is used to realize communication of ground equipment; The rectangular patch array (11) comprises 16 identical patch units arranged periodically in a 4×4 array; wherein each patch unit comprises four radiating patches (111) arranged in a 4×4 array and a feeding patch (112), the feeding patch (112) being located in the middle of the four radiating patches (111); The first metal via (12) includes a first short-circuit via (121) and a first power supply via (122); the first short-circuit via (121) is disposed below the radiating patch (111), and the first power supply via (122) is disposed below the power supply patch (112); A first circular slit (131) is provided on the first metal layer (13), and the first circular slit (131) is provided corresponding to the first power supply through hole (122); The second metal layer (21) is provided with a second circular slit (211), which is provided in correspondence with the first power supply through hole (122); wherein, the outer ring of the four second circular slits (211) located in the center is provided with a first annular slit (212), and the outer ring of the twelve second circular slits (211) located on the outside is provided with a first C-shaped slit (213); the first C-shaped slits (213) located at the four corners face the corners of the adjacent second metal layer (21), and the remaining first C-shaped slits (213) face the edge of the adjacent second metal layer (21); The second metal via (22) includes a first low-frequency feed via (221), a first high-frequency feed via (222), a first low-frequency short-circuit via (223), and a first high-frequency short-circuit via (224); the first low-frequency feed via (221) is located at the center of the second dielectric substrate (2); the first high-frequency feed via (222) is correspondingly located to the first feed via (122); the first low-frequency short-circuit via (223) is located between the twelve second circular slots (211) located on the outer side; the first high-frequency short-circuit via (224) is located between the second circular slots (211) and the first annular slot (212) and between the second circular slots (211) and the first C-shaped slot (213); The third metal layer (23) has a third circular slit (231) at its center, and the third metal layer (23) has a fourth circular slit (232) at the corresponding position of the first high-frequency feed through hole (222). The outer ring of the four fourth circular slits (232) located in the center is provided with a second annular slit (233), and the outer ring of the twelve fourth circular slits (232) located on the outside is provided with a second C-shaped slit (234). The second C-shaped slits (234) located at the four corners face the corners of the adjacent third metal layer (23), and the remaining second C-shaped slits (234) face the edge of the adjacent third metal layer (23).

2. The S / Ka band common aperture antenna according to claim 1, characterized in that, A third medium plate (3) is also provided below the second medium plate (2); The top, middle and bottom surfaces of the third dielectric substrate (3) are respectively provided with a fourth metal layer (31), a third metal via (32) and a microstrip structure (33); wherein the fourth metal layer (31), the third metal via (32) and the microstrip structure (33) form an S / Ka band feed network.

3. The S / Ka band common aperture antenna according to claim 2, characterized in that, The fourth metal layer (31) has a fifth circular slit (311) at its center, and the fourth metal layer (31) has a sixth circular slit (312) at the corresponding position of the first high-frequency feed through hole (222). The third metal via (32) includes a second low-frequency feed via (321), a second high-frequency feed via (322), and a second high-frequency short-circuit via (323); the second low-frequency feed via (321) is located at the center of the third dielectric substrate (3); the second high-frequency feed via (322) is correspondingly provided with the first high-frequency feed via (222); the second high-frequency short-circuit via (323) is located inside the two outer rows of the second high-frequency feed via (322) and outside the two inner rows of the second high-frequency feed via (322); The microstrip structure (33) includes a low-frequency feed structure (331), a low-frequency matching stub (332), a high-frequency power distribution structure (333), and a high-frequency matching stub (334). The low-frequency feed structure (331) is located at the central axis of the third dielectric substrate (3). One end of the low-frequency feed structure (331) near the outer edge of the third dielectric substrate (3) serves as an energy input port, and the other end of the low-frequency feed structure (331) is connected to the second low-frequency feed via (321). The low-frequency matching stub (332) The high-frequency power distribution structure (333) is set on the low-frequency power supply structure (331) and located near the energy input port; the high-frequency power distribution structure (333) is symmetrically arranged with reference to the two central axes of the third dielectric plate (3), and the output end of the high-frequency power distribution structure (333) is connected to the second high-frequency power supply via (322); one end of the high-frequency matching stub (334) is connected to the second high-frequency short-circuit via (323), and the other end of the high-frequency matching stub (334) is connected to the adjacent high-frequency power distribution structure (333).

4. The S / Ka band common aperture antenna according to claim 3, characterized in that, The first metal layer (13) has eight first L-shaped slots (132) at its edge, and the eight first L-shaped slots (132) are symmetrically arranged along the central axis of the first dielectric plate (1); the fourth metal layer (31) has eight second L-shaped slots (313) at its edge, and the eight second L-shaped slots (313) are symmetrically arranged along the central axis of the third dielectric plate (3).

5. An S / Ka band common-aperture antenna according to claim 4, characterized in that, It also includes a first adhesive plate (4) and a second adhesive plate (5); the first adhesive plate (4) is disposed between the first medium plate (1) and the second medium plate (2), and the second adhesive plate (5) is disposed between the second medium plate (2) and the third medium plate (3).

6. The S / Ka band common-aperture antenna according to claim 5, characterized in that, The first adhesive plate (4) is provided with a fourth metal through hole (41), and the second adhesive plate (5) is provided with a fifth metal through hole (51) and a sixth metal through hole (52); the first power supply through hole (122), the first high-frequency power supply through hole (222), the second high-frequency power supply through hole (322), the fourth metal through hole (41) and the fifth metal through hole (51) are located on the same vertical line; the sixth metal through hole (52) and the second low-frequency power supply through hole (321) are located on the same vertical line.

7. An S / Ka band common-aperture antenna according to claim 1, characterized in that, In each patch unit, the lengths of two adjacent radiating patches (111) are different, and the lengths of two diagonally arranged radiating patches (111) are the same.

8. A communication device, characterized in that, The communication device includes an S / Ka band common aperture antenna as described in any one of claims 1-7.

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