LED display device and manufacturing method thereof

Abstract

The application discloses an LED display device and a manufacturing method thereof. The device comprises a first light-emitting layer system and a second light-emitting layer system. The first light-emitting layer system comprises a plurality of first light-emitting units, a first metal reflection layer, a plurality of first pixel electrodes and a plurality of first metal reflection patterns. The first pixel electrodes and the first metal reflection patterns are respectively arranged on one side and the other side of the first light-emitting units. The first metal reflection layer surrounds each first light-emitting unit. A first light-emitting area is formed between the first metal reflection patterns and the first metal reflection layer. The second light-emitting layer system comprises a plurality of second light-emitting units, a second metal reflection layer and a plurality of second pixel electrodes. The plurality of second pixel electrodes are arranged on one side of the plurality of second light-emitting units. The second metal reflection layer surrounds each second light-emitting unit. The projection of the second light-emitting unit falls within the projection of the first metal reflection pattern. The application can improve the display contrast of light rays of different colors in the LED display device and improve the optical efficiency.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor light emitting diodes, in particular to an LED display device and a manufacturing method thereof. BACKGROUND

[0002] LED is an abbreviation of Light Emitting Diode, which is a kind of semiconductor component that can convert electric energy into visible light. It is a lighting source widely used in modern times in the fields of indication, display, decoration, backlight, general lighting and urban night scene. The LED display device usually has a plurality of pixel points, and in order to realize the colorization of the LED display device, on the basis of etching to form the pixel points, the stacking of LED pixel points of multiple colors is required. However, the current colored LED display device will cause serious color crosstalk of light after the light is emitted from the LED display device due to the stacking of LED pixel points of different colors, and the light absorption of the material on the light emitting path is serious, thereby resulting in poor optical efficiency of the LED display device and also reducing the display contrast. SUMMARY

[0003] Embodiments of the present application provide an LED display device and a manufacturing method thereof, which can improve the display contrast of different light colors in the LED display device and improve the optical efficiency of the LED display device.

[0004] In a first aspect, the present application provides an LED display device, which comprises:

[0005] The LED display device comprises a driving substrate and a display substrate stacked in a predetermined stacking direction, and the display substrate comprises a first light emitting layer system and a second light emitting layer system stacked in the stacking direction on the driving substrate in sequence;

[0006] The first light emitting layer system comprises a plurality of first light emitting units, a first metal reflection layer, a first transparent dielectric layer, a plurality of first pixel electrodes and a plurality of first metal reflection patterns, the plurality of first light emitting units are arranged in an array, the plurality of first pixel electrodes and the plurality of first metal reflection patterns are respectively arranged on a side of the plurality of first light emitting units facing the driving substrate and on another side of the plurality of first light emitting units facing away from the driving substrate, the first metal reflection layer is arranged in a spacing region between the plurality of first light emitting units and surrounds each first light emitting unit, and the first transparent dielectric layer is arranged between the first light emitting units and the first metal reflection layer, and a first light emitting area is formed between each first metal reflection pattern and the first metal reflection layer;

[0007] The second light-emitting layer system comprises a plurality of second light-emitting units, a second metal reflective layer, a second transparent dielectric layer, and a plurality of second pixel electrodes. The plurality of second light-emitting units are arranged in an array. The plurality of second pixel electrodes are arranged on the side of the plurality of second light-emitting units facing the driving substrate. The second metal reflective layer is arranged in the interval between the plurality of second light-emitting units and surrounds each second light-emitting unit. The second transparent dielectric layer is arranged between the second light-emitting unit and the second metal reflective layer. The projection of each second light-emitting unit along the stacking direction at least partially overlaps the projection of the corresponding first metal reflective pattern along the stacking direction.

[0008] In a second aspect, the present application provides a preparation method of an LED display device, which comprises the following steps:

[0009] A first light-emitting layer system is provided, which comprises a plurality of first light-emitting units, a first metal reflective layer, a first transparent dielectric layer, a plurality of first pixel electrodes, and a plurality of first metal reflective patterns. The plurality of first light-emitting units are arranged in an array. The plurality of first pixel electrodes and the plurality of first metal reflective patterns are arranged on the two sides of the plurality of first light-emitting units facing the driving substrate along the stacking direction. The first metal reflective layer is arranged in the interval between the plurality of first light-emitting units and surrounds each first light-emitting unit. The first transparent dielectric layer is arranged between the first light-emitting unit and the first metal reflective layer. A first light-emitting area is formed between each first metal reflective pattern and the first metal reflective layer.

[0010] A second light-emitting layer system is provided, which comprises a plurality of second light-emitting units, a second metal reflective layer, a second transparent dielectric layer, and a plurality of second pixel electrodes. The plurality of second light-emitting units are arranged in an array. The plurality of second pixel electrodes are arranged on the side of the plurality of second light-emitting units. The second metal reflective layer is arranged in the interval between the plurality of second light-emitting units and surrounds each second light-emitting unit. The second transparent dielectric layer is arranged between the second light-emitting unit and the second metal reflective layer.

[0011] The first light-emitting layer system and the second light-emitting layer system are sequentially stacked on the driving substrate, so that the projection of each second light-emitting unit along the stacking direction falls into the projection of the corresponding first metal reflective pattern along the stacking direction.

[0012] The beneficial effects of the present application are: Different from the prior art, the LED display device of the present application is provided with a first light-emitting layer system and a second light-emitting layer system which are sequentially stacked along a stacking direction, wherein a plurality of first pixel electrodes and a plurality of first metal reflection patterns of the first light-emitting layer system are respectively arranged on both sides of a plurality of first light-emitting units, and a first transparent dielectric layer and a first metal reflection layer in the first light-emitting layer system sequentially surround each first light-emitting unit. Since the first metal reflection pattern and the first metal reflection layer have a reflection effect, the light of the plurality of first light-emitting units will be emitted from the first transparent dielectric layer. Moreover, the projections of the plurality of second light-emitting units of the second light-emitting layer system along the stacking direction respectively fall within the projections of the corresponding first metal reflection patterns along the stacking direction, so that when the light of the first light-emitting unit is emitted along the stacking direction to the second light-emitting unit, most of the light will be reflected back to the first light-emitting unit by the first metal reflection pattern, so that most of the light of the first light-emitting unit is concentrated and emitted from the first transparent dielectric layer, without being transmitted through the second light-emitting unit to cause color crosstalk of the light, and most of the light generated by the second light-emitting unit will be reflected by the first metal reflection pattern without passing through the first light-emitting unit, so that the light generated by the first light-emitting unit and the second light-emitting unit is not easy to cause color crosstalk, thereby improving the display contrast of different light colors in the LED display device and reducing the loss of light. Moreover, the second transparent dielectric layer and the second metal reflection layer of the second light-emitting layer system also sequentially surround each second light-emitting unit, and the second metal reflection layer can also reflect the light of the second light-emitting unit, so that the light collimation and optical efficiency of the LED display device can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 is a structural schematic view of the LED display device embodiment under a lateral viewing angle;

[0014] Figure 2 is Figure 1 a structural schematic view of the first metal reflection layer and the first metal reflection pattern in the LED display device embodiment shown in FIG. 4 under a viewing angle along the stacking direction;

[0015] Figure 3 is Figure 1 a structural schematic view of the LED display device embodiment shown in FIG. 5 under another lateral viewing angle;

[0016] Figure 4 is Figure 1 a structural schematic view of the LED display device embodiment shown in FIG. 6 under another lateral viewing angle;

[0017] Figure 5 is Figure 1A second pixel electrode in the illustrated LED display device embodiment and a structure diagram of the second pixel electrode when projected on the first metal reflection layer along the stacking direction;

[0018] Figure 6 is a flowchart of an embodiment of a manufacturing method of the LED display device of the present application;

[0019] Figure 7 is another flowchart of an embodiment of a manufacturing method of the LED display device of the present application;

[0020] Figure 8 is Figure 7 is a preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment illustrated;

[0021] Figure 9 is Figure 7 is another preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment illustrated;

[0022] Figure 10 is Figure 6 is a preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment illustrated;

[0023] Figure 11 is Figure 6 is another preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment illustrated;

[0024] Figure 12 is Figure 6 is still another preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment illustrated. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of protection of the present application.

[0026] The following embodiments of the LED display device of the present application exemplarily describe the LED display device.

[0027] The LED display device 1 is a device capable of generating light rays. The interior of the LED display device 1 can form a plurality of pixel points to generate light rays, and the generated light rays can be emitted from one side of the LED display device 1 to illuminate or display various information such as text, images, videos, etc. For example, the LED display device 1 can be an AR glasses chip, a projection display chip, an LED digital car light chip, a digital light strip chip, or an LED display screen chip, etc.

[0028] In some embodiments, as shown in Figure 1 , the LED display device 1 includes a driving substrate 20 and a display substrate 10 stacked along a predetermined stacking direction. As an example, the stacking direction can be as shown by arrow A in the figure. The driving substrate 20 can have a corresponding circuit structure inside. The driving substrate 20 is used to provide driving voltage for the display substrate 10. The display substrate 10 is used to generate light rays under the action of the electrical energy transmitted by the driving substrate 20, thereby realizing the display function of the LED display device 1.

[0029] As shown in Figure 1 , the display substrate 10 can include a first light-emitting layer system 110 and a second light-emitting layer system 120 stacked in sequence on the driving substrate 20 along the stacking direction. As an example, the stacking direction can be as shown by arrow A in Figure 1 .

[0030] Among them, the first light-emitting layer system 110 and the second light-emitting layer system 120 are different light-emitting components. The first light-emitting layer system 110 can generate light rays under the action of the driving voltage of the driving substrate 20 alone. The second light-emitting layer system 120 can also generate light rays under the action of the driving voltage of the driving substrate 20 alone.

[0031] In some embodiments, the light rays generated by the first light-emitting layer system 110 and the second light-emitting layer system 120 can be different in color. For example, the first light-emitting layer system 110 can generate blue light rays, and the first light-emitting layer system 110 can generate green light rays.

[0032] In some embodiments, as shown in Figure 1 , the first light-emitting layer system 110 can include a plurality of first light-emitting units 111, a first metal reflection layer 112, a first transparent dielectric layer 113, a plurality of first pixel electrodes 114, and a plurality of first metal reflection patterns 115.

[0033] Among them, the plurality of first light-emitting units 111 can be arranged in an array. The plurality of first light-emitting units 111 can be the pixel points described above. The spacing direction of the plurality of first light-emitting units 111 can be perpendicular to the stacking direction A. As an example, the spacing direction can be as shown by arrow B in Figure 1 .

[0034] In some embodiments, the first light emitting unit 111 can include a P-type semiconductor layer, an active layer, and an N-type semiconductor layer, the active layer being a plurality of quantum well layers, the P-type semiconductor layer and the N-type semiconductor layer being disposed on two sides of the active layer, respectively, the P-type semiconductor layer, the active layer, and the N-type semiconductor layer can collectively form an N-i-P structure, so that under the action of a driving voltage, the recombination of electrons and holes can be carried out to emit light, thereby forming a light emitting unit capable of emitting light. As an example, the first light emitting unit 111 can be formed by doping semiconductor materials such as AlN, AlGaN, GaN, InGaN, AlInGaN, GaAs, GaP, GaInN, GaAsP, AlGaAs, or AlGaInP.

[0035] In some embodiments, as shown in FIG. 1A, the plurality of first pixel electrodes 114 and the plurality of first metal reflection patterns 115 can be disposed on the side of the plurality of first light emitting units 111 facing the driving substrate 20 and the side of the plurality of first light emitting units 111 away from the driving substrate 20, respectively. Figure 1

[0036] Specifically, the plurality of first pixel electrodes 114 can be in ohmic contact with the P-type semiconductor layer in the corresponding first light emitting unit 111 as a P electrode, and the plurality of first pixel electrodes 114 can also be electrically connected with the driving substrate 20, so that the driving substrate 20 can provide a driving voltage to the plurality of first light emitting units 111 through the plurality of first pixel electrodes 114.

[0037] As an example, the first pixel electrode 114 can be made of metal copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO), or other materials with conductivity.

[0038] The plurality of first metal reflection patterns 115 can be in ohmic contact with the N-type semiconductor layer in the corresponding first light emitting unit 111 as an N electrode, so that the corresponding first metal reflection pattern 115, the first light emitting unit 111, and the first pixel electrode 114 form a current path, so that the first light emitting unit 111 is facilitated to emit light. The first metal reflection pattern 115 also has a reflection function to reflect light on the side of the plurality of first light emitting units 111 away from the driving substrate 20.

[0039] As an example, the first metal reflection pattern 115 can be made of a material with high reflectivity and conductivity such as silver or aluminum.

[0040] In some embodiments, as shown in FIG. 1A, the plurality of first pixel electrodes 114 and the plurality of first metal reflection patterns 115 can be disposed on the side of the plurality of first light emitting units 111 facing the driving substrate 20 and the side of the plurality of first light emitting units 111 away from the driving substrate 20, respectively. Figure 2 ​As shown, the first metal reflection layer 112 can be arranged in a grid shape, and a plurality of first metal reflection patterns 115 can be respectively electrically connected to the first metal reflection layer 112 and used to provide a common voltage to the plurality of first light emitting units 111. Specifically, each first metal reflection pattern 115 can be directly electrically connected to the first metal reflection layer 112 through an electrode or a wire. The first metal reflection layer 112 and the first metal reflection pattern 115 can collectively serve as an N electrode of the first light emitting unit 111 to provide the common voltage to the plurality of first light emitting units 111.

[0041] In other embodiments, the first metal reflection layer 112 can also be directly electrically connected to the N-type semiconductor layer of the first light emitting unit 111 through an electrode or a wire, without connecting the N-type semiconductor layer of the first light emitting unit 111 through the first metal reflection layer 112.

[0042] In combination Figure 1 And Figure 2 The first metal reflection layer 112 can be arranged in the interval region between the plurality of first light emitting units 111 and surround each first light emitting unit 111. The first transparent medium layer 113 can be arranged between the first light emitting unit 111 and the first metal reflection layer 112, and form a first light emitting region 116 between each first metal reflection pattern 115 and the first metal reflection layer 112.

[0043] In the interval direction B of the first light emitting unit 111, the first transparent medium layer 113 surrounds and contacts each first light emitting unit 111 to wrap each first light emitting unit 111 in the interval direction B of the first light emitting unit 111. In the interval direction B of the first light emitting unit 111, the first metal reflection layer 112 is wrapped on the periphery of the first transparent medium layer 113 to wrap each first light emitting unit 111.

[0044] The first metal reflection layer 112 can reflect light, and the light in the first light emitting unit 111 can be reflected by the first metal reflection layer 112 after passing through the first transparent medium layer 113, so as to reduce the case that the light of the first light emitting unit 111 propagates to other first light emitting units 111 along the interval direction B, and further reduce the light crosstalk and optical efficiency loss between the plurality of first light emitting units 111. Moreover, under the action of the first metal reflection layer 112 and the first metal reflection pattern 115, the first light emitting region 116 of the first light emitting layer system 110 can be limited in each first light emitting unit 111, and each first light emitting region 116 emits light through the first transparent medium layer 113.

[0045] In some embodiments, as Figure 1As shown, the second light-emitting layer system 120 may include a plurality of second light-emitting units 121, a second metal reflective layer 122, a second transparent dielectric layer 123, and a plurality of second pixel electrodes 124.

[0046] The plurality of second light-emitting units 121 are arranged in an array with intervals. The plurality of first light-emitting units 111 can serve as pixels in the second light-emitting layer 120. The spacing direction B of the plurality of second light-emitting units 121 can be perpendicular to the stacking direction A.

[0047] Similarly, the second light-emitting unit 121 may also include a P-type semiconductor layer, an active layer, and an N-type semiconductor layer to form a NiP structure. This allows for electron-hole recombination under the driving voltage of the driving substrate 20, resulting in light emission and the formation of a pixel capable of emitting light. The second light-emitting unit 121 may also be formed by doping semiconductor materials such as AlN, AlGaN, GaN, InGaN, AlInGaN, GaAs, GaP, GaInN, GaAsP, AlGaAs, or AlGaInP.

[0048] Multiple second pixel electrodes 124 are correspondingly disposed on the side of multiple second light-emitting units 121 facing the driving substrate 20. The multiple second pixel electrodes 124 can also be electrically connected to the driving substrate 20, and each of the multiple second pixel electrodes 124 also establishes an ohmic contact with the P-type semiconductor layer in the corresponding second light-emitting unit 121. The driving substrate 20 provides a driving voltage to the second light-emitting units 121 through the multiple second pixel electrodes 124. As an example, the second pixel electrodes 124 can be made of copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO), or other conductive materials.

[0049] like Figure 1 As shown, the second metal reflective layer 122 can be disposed within the spacing area between the plurality of second light-emitting units 121 and surround each second light-emitting unit 121. The second transparent dielectric layer 123 is disposed between the second light-emitting unit 121 and the second metal reflective layer 122. Specifically, along the spacing direction B of the plurality of second light-emitting units 121, the second transparent dielectric layer 123 can wrap around each second light-emitting unit 121, and the second metal reflective layer 122 can be disposed on the side of the second transparent dielectric layer 123 facing away from the second light-emitting unit 121, and the second metal reflective layer 122 can wrap around each second light-emitting unit 121 through the second transparent dielectric layer 123.

[0050] The second metal reflective layer 122 can reflect light, thereby reducing the amount of light propagating along the spacing direction B to other second light-emitting units 121 and reducing crosstalk between multiple second light-emitting units 121. Furthermore, the second metal reflective layer 122 can connect to the N-type semiconductor in the second light-emitting unit 121, thereby providing a driving voltage to the N-type semiconductor so that the second light-emitting unit 121 can emit light normally. The second metal reflective layer 122 can be made of highly reflective and conductive materials such as silver or aluminum.

[0051] like Figure 1 As shown, the projections of the multiple second light-emitting units 121 along the stacking direction A can respectively fall into the projection of the corresponding first metal reflective pattern 115 along the stacking direction A. In other words, along the stacking direction A, the projections of the multiple second light-emitting units 121 can overlap with the projection of the first metal reflective pattern 115.

[0052] This configuration ensures that when the light from the first light-emitting unit 111 propagates along the stacking direction A towards the second light-emitting unit 121, most of the light is reflected back into the first light-emitting unit 111 by the first metallic reflective pattern 115. This concentrates most of the light emitted from the first light-emitting unit 111 through the first transparent dielectric layer 113, preventing crosstalk of light colors from passing through the second light-emitting unit 121. Conversely, most of the light generated by the second light-emitting unit 121 is also reflected by the first metallic reflective pattern 115 and does not pass through the first light-emitting unit 111. This reduces the likelihood of color crosstalk between the light generated by the first and second light-emitting units 111, thereby improving the contrast ratio of different light colors in the LED display device 1 and reducing light loss.

[0053] Furthermore, the second transparent dielectric layer 123 and the second metal reflective layer 122 of the second light-emitting layer system 120 also surround each second light-emitting unit 121 in sequence. The light generated by the second light-emitting unit 121 is emitted to the side opposite to the driving substrate 20 under the action of the first metal reflective pattern 115 and the second metal reflective layer 122, thus improving the light output collimation and optical efficiency of the LED display device 1.

[0054] In some implementations, such as Figure 1 As shown, the first transparent dielectric layer 113 can further cover the side of the plurality of first light-emitting units 111 and the plurality of first pixel electrodes 114 facing the driving substrate 20. The first metal reflective layer 112 can be provided with a plurality of first window regions 1121 corresponding to the plurality of first pixel electrodes 114 respectively, and the projection of the first pixel electrode 114 along the stacking direction A falls into the corresponding first window region 1121.

[0055] Specifically, the first transparent dielectric layer 113 electrically isolates the first metal reflective layer 112 and the plurality of first pixel electrodes 114. In this way, the possibility of electrical connection between the first metal reflective layer 112 and the plurality of first pixel electrodes 114 during the formation preparation process can be reduced, thereby reducing the risk of short circuit and leakage in the LED display device 1.

[0056] In some embodiments, as shown in FIG. 1, the first light-emitting layer system 110 can further include a first dielectric reflective layer 117. The first dielectric reflective layer 117 can cover the first metal reflective layer 112 and the first transparent dielectric layer 113 exposed through the first window region 1121 from the side facing the driving substrate 20. The first dielectric reflective layer 117 can also have high reflectivity and can reflect light in the first light-emitting layer system 110 and the second light-emitting layer system 120. In this way, the first metal reflective layer 112 can reflect light in the first light-emitting layer system 110 and the second light-emitting layer system 120 to the side away from the driving substrate 20, thereby improving the light extraction efficiency of the LED display device 1 and making the light emitted by the LED display device 1 more collimated. Figure 1 As an example, the first dielectric reflective layer 117 can be made of a material that has the ability to reflect light and is insulating, such as a DBR mirror.

[0057]

[0058] In some embodiments, the reflectivity of the first metal reflective pattern 115 is not less than the reflectivity of the first dielectric reflective layer 117. In this way, a resonant cavity cannot be formed between the first dielectric reflective layer 117 and the first metal reflective pattern 115. When the light of the first light-emitting unit 111 is reflected by the first dielectric reflective layer 117 to the first metal reflective pattern 115, it can be reflected back to the first light-emitting unit 111 by the first metal reflective pattern 115. This reduces the phenomenon of direct resonance of light through the first metal reflective pattern 115, thereby reducing the light of the first light-emitting unit 111 passing through the second light-emitting unit 121 and improving the display contrast of the LED display device 1.

[0059] In some embodiments, as shown in FIG. 1, the first light-emitting layer system 110 can further include a first dielectric reflective layer 117. The first dielectric reflective layer 117 can cover the first metal reflective layer 112 and the first transparent dielectric layer 113 exposed through the first window region 1121 from the side facing the driving substrate 20. The first dielectric reflective layer 117 can also have high reflectivity and can reflect light in the first light-emitting layer system 110 and the second light-emitting layer system 120. In this way, the first metal reflective layer 112 can reflect light in the first light-emitting layer system 110 and the second light-emitting layer system 120 to the side away from the driving substrate 20, thereby improving the light extraction efficiency of the LED display device 1 and making the light emitted by the LED display device 1 more collimated. Figure 1 ​As shown, the first light emitting layer system 110 can further include a first dielectric bonding layer 118 covering the first dielectric reflective layer 117 from the side of the driving substrate 20. The display substrate 10 can further include a plurality of first metal transfer electrodes 130 penetrating through the first dielectric bonding layer 118 and the first dielectric reflective layer 117 and electrically connected to the plurality of first pixel electrodes 114, respectively. The first dielectric bonding layer 118 and the plurality of first metal transfer electrodes 130 are bonded to the driving substrate 20 in a hybrid bonding manner, and the plurality of first metal transfer electrodes 130 are further electrically connected to the driving substrate 20 to provide driving voltages to the plurality of first pixel electrodes 114, respectively.

[0060] The first dielectric bonding layer 118 can act as a mask film and a protective layer to prevent impurities from diffusing into the LED display device 1. The plurality of first metal transfer electrodes 130 correspondingly electrically lead out the plurality of first pixel electrodes 114 from the side of the first dielectric reflective layer 117 towards the driving substrate 20 through the first window region 1121, so that the plurality of first pixel electrodes 114 are electrically connected to the driving substrate 20. Moreover, the display substrate 10 is fixed to the driving substrate 20 in a hybrid bonding manner, which can make the connection between the display substrate 10 and the driving substrate 20 more stable, thereby improving the stability of the LED display device 1.

[0061] For example, the first dielectric bonding layer 118 can be an oxide layer made of silicon dioxide, silicon nitride or other insulating materials. The first metal transfer electrodes 130 can be made of metal copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO) or other conductive materials.

[0062] In some embodiments, as shown, Figure 1 As shown, the first light emitting layer system 110 and the second light emitting layer system 120 can further include a second dielectric bonding layer 119 and a third dielectric bonding layer 125 on the side adjacent to each other, respectively. The second dielectric bonding layer 119 and the third dielectric bonding layer 125 are bonded to each other to fix the second light emitting layer system 120 to the first light emitting layer system 110.

[0063] Specifically, the second dielectric bonding layer 119 is located on the side of the first metal reflective pattern 115 away from the driving substrate 20 and covers the first metal reflective pattern 115 and the first metal reflective layer 112, and the third dielectric bonding layer 125 is located on the side of the plurality of second pixel electrodes 124 and the second metal reflective layer 122 facing the first light emitting layer system 110, and the second dielectric bonding layer 119 and the third dielectric bonding layer 125 are bonded to each other.

[0064] For example, the second dielectric bonding layer 119 and the third dielectric bonding layer 125 can be oxide layers made of insulating and transparent materials such as silicon dioxide or silicon nitride.

[0065] In this way, not only can the first light-emitting layer system 110 and the second light-emitting layer system 120 be fixedly connected, but also the connection between the first light-emitting layer system 110 and the second light-emitting layer system 120 is more secure. Moreover, the second dielectric bonding layer 119 and the third dielectric bonding layer 125 are insulating and transparent, which can reduce the short circuit or leakage between the first light-emitting layer system 110 and the second light-emitting layer system 120, and can also reduce the loss of light.

[0066] In some embodiments, as shown in FIG. 1, the display substrate 10 can further include a plurality of second metal transfer electrodes 140 penetrating the first light-emitting layer system 110. The plurality of second pixel electrodes 124 can be electrically connected to the driving substrate 20 through the plurality of second metal transfer electrodes 140, respectively, to provide driving voltage to the plurality of second pixel electrodes 124, respectively. Figure 3

[0067] In some embodiments, the plurality of second pixel electrodes 124 and the corresponding second metal transfer electrodes 140 and second pixel electrodes 124 can collectively serve as a P electrode of the second light-emitting unit 121, thereby providing driving voltage to the P-type semiconductor in the second light-emitting unit 121.

[0068] In some embodiments, along the stacking direction A, the positions of the second metal transfer electrodes 140 can be staggered with the positions of the first light-emitting units 111, so that the second metal transfer electrodes 140 do not affect the light emission of the second metal transfer electrodes 140.

[0069] In some embodiments, a part of the second pixel electrode 124 can extend into the spacing region of the adjacent first light-emitting unit 111 along the spacing direction B of the first light-emitting unit 111.

[0070] Specifically, a part of the second pixel electrode 124 can extend to the position of the corresponding second metal transfer electrode 140 along the spacing direction B. The second metal reflective layer 122 can have a recessed gap to accommodate the extended second pixel electrode 124, and part of the space in the gap can be filled with an insulating medium, so that the second pixel electrode 124 and the second metal reflective layer 122 are electrically isolated.

[0071] The second metal transfer electrode 140 corresponds to the position of the first metal reflective layer 112 to penetrate the third dielectric bonding layer 125 and the first light-emitting layer system 110, and is electrically connected to the corresponding electrode on the driving substrate 20. Moreover, the second metal transfer electrode 140 is electrically isolated from the first light-emitting layer system 110.

[0072] ​Since the light of the first light-emitting layer system 110 is emitted through the first transparent medium layer 113, the second metal transfer electrode 140 is arranged to be staggered with the first light-emitting unit 111 and the first transparent medium layer 113, so as to reduce the influence of the second metal transfer electrode 140 on the light emission of the first light-emitting layer system 110, thereby improving the light emission efficiency of the first light-emitting layer system 110.

[0073] In some embodiments, as shown in FIG. 1, the first metal reflection layer 112 can also be provided with a plurality of first notches 1122, and the plurality of second metal transfer electrodes 140 are arranged in the plurality of first notches 1122 respectively. Figure 3

[0074] In some embodiments, as shown in FIG. 1, the first metal reflection layer 112 can also be provided with a plurality of first notches 1122, and the plurality of second metal transfer electrodes 140 are arranged in the plurality of first notches 1122 respectively. Figure 1 Figure 3 In some embodiments, as shown in FIG. 1, the second light-emitting layer system 120 can also include a plurality of second metal reflection patterns 127, and the plurality of second metal reflection patterns 127 respectively cover the side of the plurality of second light-emitting units 121 away from the driving substrate 20, and a second light-emitting area 128 is formed between each second metal reflection pattern 127 and the second metal reflection layer 122.

[0075] The second metal reflection pattern 127 also has the function of reflecting light. Under the reflection of the second metal reflection layer 122 and the second metal reflection pattern 127, the light generated by the second light-emitting unit 121 in the second light-emitting area 128 can be emitted out of the second light-emitting layer system 120 through the second transparent medium layer 123. In this way, the light of the second light-emitting unit 121 is more concentrated, and the light emission efficiency of the LED display device 1 is improved.

[0076] For example, the second metal reflection pattern 127 can be made of a material that has conductivity and can reflect light, such as metal Ag, Al, etc.

[0077] In some embodiments, the second metal reflection layer 122 is arranged in a grid shape, and the plurality of second metal reflection patterns 127 are electrically connected to the second metal reflection layer 122 and used to provide a common voltage to the plurality of second light-emitting units 121. Specifically, the connection structure of the second metal reflection layer 122 and the second metal reflection pattern 127 can refer to the connection structure of the first metal reflection layer 112 and the first metal reflection pattern 115 in the above embodiments, which will not be described here.

[0078] In some embodiments, the second metal reflection layer 122 is electrically connected to the first metal reflection layer 112.

[0079] ​​Of course, in other embodiments, the second metal reflective layer 122 can also not be electrically connected with the first metal reflective layer 112, and the second metal reflective layer 122 can be connected with other circuits or other circuit structures in the driving substrate 20, so that the second metal reflective layer 122 can provide a common voltage for the second metal reflective pattern 127 alone.

[0080] Specifically, the second metal reflective pattern 127 can be electrically connected with the second metal reflective layer 122 through a wire or an electrode, and the second metal reflective pattern 127 can also be electrically connected with the N-type semiconductor layer in the second light emitting unit 121. The second metal reflective pattern 127 and the second metal reflective layer 122 can serve as the N electrode of the second light emitting unit 121 to provide a common voltage for the second light emitting unit 121.

[0081] In this way, the second metal reflective layer 122 is connected with multiple second metal reflective patterns 127 to connect multiple second light emitting units 121, which can facilitate the second metal reflective layer 122 to connect the N-type semiconductor layer in the second light emitting unit 121, thereby reducing the difficulty of manufacturing the LED display device 1.

[0082] Of course, in other embodiments, the second metal reflective layer 122 can be directly electrically connected with the second metal reflective layer 122 through a wire or an electrode, without the need to be connected with the second metal reflective pattern 127.

[0083] In some embodiments, the size of the first metal reflective layer 112 in the interval between adjacent first light emitting units 111 can decrease in sequence along the direction away from the driving substrate 20, and the size of the first light emitting unit 111 can increase in sequence along the direction away from the driving substrate 20, so that the first metal reflective layer 112 can reflect the light generated by the first light emitting unit 111 to the side away from the driving substrate 20.

[0084] In some embodiments, the position of the first transparent medium layer 113 can correspond to the position of the second transparent medium layer 123, and when the light of the first light emitting unit 111 is emitted to the second light emitting layer system 120 through the first transparent medium layer 113, the light of the first light emitting unit 111 can propagate from the first transparent medium layer 113 to the second transparent medium layer 123, and then be emitted out of the second light emitting layer system 120 through the second transparent medium layer 123, so as to realize the light emission of the LED display device 1 from the side away from the first light emitting layer system 110 of the second light emitting layer system 120.

[0085] In some embodiments, as shown in FIG. 1, the first light emitting layer system 110 can include a plurality of first light emitting units 111, and the second light emitting layer system 120 can include a plurality of second light emitting units 121. Figure 1 In some embodiments, as shown in FIG. 1, the first light emitting layer system 110 can include a plurality of first light emitting units 111, and the second light emitting layer system 120 can include a plurality of second light emitting units 121. Figure 4As shown, the display substrate 10 can further include a third light emitting layer system 150 disposed on the side of the second light emitting layer system 120 away from the first light emitting layer system 110. The structure of the third light emitting layer system 150 disposed on the side of the second light emitting layer system 120 can be similar to the structure of the second light emitting layer system 120 disposed on the side of the first light emitting layer system 110. The light color of the third light emitting layer system 150 can be different from the light color generated by the first light emitting layer system 110 and the second light emitting layer system 120. For example, the first light emitting layer system 110 can generate blue light, the second light emitting layer system 110 can generate green light, and the third light emitting layer system 150 can generate red light.

[0086] Please refer to Figure 4 , the third light emitting layer system 150 can include a plurality of third light emitting units 151, a third metal reflective layer 152, a third transparent dielectric layer 153, and a plurality of third pixel electrodes 154.

[0087] The plurality of third light emitting units 151 are arranged in an array. The spacing direction B of the plurality of third light emitting units 151 can be perpendicular to the stacking direction A. Similarly, the third light emitting unit 151 can also include a P-type semiconductor layer, an active layer, and an N-type semiconductor layer to form an N-i-P structure, so that under the action of the driving voltage of the driving substrate 20, electrons and holes can be combined to emit light to form a pixel point capable of emitting light. The third light emitting unit 151 can also be formed by doping semiconductor materials such as AlN, AlGaN, GaN, InGaN, AlInGaN, GaAs, GaP, GaInN, GaAsP, AlGaAs, AlGaInP, etc.

[0088] As shown in Figure 4 , the plurality of third pixel electrodes 154 are disposed on the side of the plurality of third light emitting units 151 facing the driving substrate 20. The plurality of third pixel electrodes 154 can also be electrically connected to the driving substrate 20, and the plurality of third pixel electrodes 154 are respectively electrically connected to the P-type semiconductor layer in the corresponding third light emitting unit 151. The driving substrate 20 provides a driving voltage to the third light emitting unit 151 through the plurality of third pixel electrodes 154. As an example, the third pixel electrode 154 can be made of metal copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO) or other conductive materials.

[0089] As shown in Figure 4As shown, the third metal reflective layer 152 is disposed in the interval region between the plurality of third light emitting units 151 and surrounds each third light emitting unit 151, and the third transparent dielectric layer 153 is disposed between the third light emitting unit 151 and the third metal reflective layer 152. Specifically, along the interval direction B of the plurality of third light emitting units 151, the third transparent dielectric layer 153 wraps around each third light emitting unit 151, and the third metal reflective layer 152 is disposed on the side of the third transparent dielectric layer 153 away from the third light emitting unit 151, and the third metal reflective layer 152 wraps around each third light emitting unit 151 through the second transparent dielectric layer 123.

[0090] The third metal reflective layer 152 can have the function of reflecting light rays, so as to reflect the light rays that pass through the third transparent dielectric layer 153, thereby reducing the light rays propagating along the interval direction B into other third light emitting units 151, and reducing the light ray crosstalk phenomenon between the plurality of third light emitting units 151. Moreover, the third metal reflective layer 152 can be connected to the N-type semiconductor in the third light emitting unit 151, so as to provide a common voltage to the N-type semiconductor, so that the third light emitting unit 151 can normally emit light. The third metal reflective layer 152 can be made of a material such as silver or aluminum that has high reflectivity and conductivity.

[0091] The projection of each third light emitting unit 151 along the stacking direction A can fall within the projection of the corresponding second metal reflective pattern 127. Therefore, when the light rays of the second light emitting unit 121 are emitted in the direction of the third light emitting unit 151 along the stacking direction A, most of the light rays will be reflected back to the second light emitting unit 121 by the second metal reflective pattern 127, so that most of the light rays of the second light emitting unit 121 are concentrated and emitted from the second transparent dielectric layer 123, without passing through the third light emitting unit 151 to cause light ray color crosstalk, thereby improving the display contrast of different light ray colors in the LED display device 1, and reducing the loss of light rays.

[0092] In some embodiments, the LED display device 1 can also be provided with a plurality of third metal transfer electrodes 156, each third metal transfer electrode 156 being electrically connected to a corresponding third pixel electrode 154 and penetrating the second light emitting layer system 120 and the first light emitting layer system 110 to electrically connect the driving substrate 20. The third metal transfer electrode 156 is displaced from the second light emitting unit 121 and the first light emitting unit 111 in the stacking direction A, and the third metal transfer electrode 156 is electrically isolated from the first light emitting layer system 110, the second light emitting layer system 120, and the third metal reflective layer 152.

[0093] Each third pixel electrode 154 part corresponds to a position extending to between two third light emitting units 151, to connect a corresponding third metal transfer electrode 156, so that the driving substrate 20 can provide a driving voltage to the third light emitting unit 151 through the plurality of third metal transfer electrodes 156 and the plurality of third pixel electrodes 154. As an example, the structure of the third pixel electrode 154 and the second pixel electrode 124 projected to the first metal reflection layer 112 along the stacking direction A can be as shown in FIG. 1C, and the projection of the third metal transfer electrode 156 and the second metal transfer electrode 140 along the stacking direction A can be staggered with each other, so as to reduce the mutual interference of the first light emitting layer system 110, the second light emitting layer system 120 and the third light emitting layer system 150. Figure 5 As shown in FIG. 1C, the projection of the third metal transfer electrode 156 and the second metal transfer electrode 140 along the stacking direction A can be staggered with each other, so as to reduce the mutual interference of the first light emitting layer system 110, the second light emitting layer system 120 and the third light emitting layer system 150.

[0094] Furthermore, the N-type semiconductor of the third light emitting unit 151 can also be connected to the third metal reflection layer 152 through an electrode or a wire, and the third metal reflection layer 152 serves as the N electrode of the third light emitting unit 151 to provide a common voltage to the third light emitting unit 151. The specific structure in the third light emitting layer system 150 can refer to the structure of the second metal transfer electrode 140 of the second light emitting layer system 120 described above, and the present embodiment will not be described here.

[0095] In some embodiments, the connection structure of the second light emitting layer system 120 connected to the driving substrate 20 can also be referred to the first light emitting layer system 110, and other light emitting layer systems can be stacked on the third light emitting layer system 150, so that the LED display device 1 can emit more colors of light.

[0096] Taking the structure of the above LED display device 1 as an example, the preparation method of the LED display device 1 is described below. As shown in FIG. 2A, Figures 6 to 12 wherein Figures 6 to 7 the manufacturing method flow of the LED display device 1 in an embodiment of the present application is shown, Figures 8 to 12 the step flow of Figures 6 to 7 involves the preparation process and component structure.

[0097] S100: providing a first light emitting layer system, wherein the first light emitting layer system comprises a plurality of first light emitting units, a first metal reflection layer, a first transparent dielectric layer, a plurality of first pixel electrodes and a plurality of first metal reflection patterns, the plurality of first light emitting units are arranged in an array, the plurality of first pixel electrodes and the plurality of first metal reflection patterns are respectively arranged on both sides of the plurality of first light emitting units in the stacking direction towards the driving substrate, the first metal reflection layer is arranged in the interval between the plurality of first light emitting units and surrounds each first light emitting unit, the first transparent dielectric layer is arranged between the first light emitting unit and the first metal reflection layer, and a first light emitting area is formed between each first metal reflection pattern and the first metal reflection layer.

[0098] In some embodiments, as shown in Figure 7 and Figure 9 S100 can include the following steps S110-S150:

[0099] S110: providing a first growth substrate.

[0100] The first growth substrate 160 can be a substrate of sapphire, silicon, silicon carbide, gallium nitride, etc., or a substrate made of ceramic, glass, PCB substrate, etc.

[0101] S120: forming a first light-emitting epitaxial layer on the first growth substrate and patterning to form a plurality of first light-emitting units arranged in an array.

[0102] Specifically, the first light-emitting epitaxial layer 1111 can be grown on the first growth substrate 160. Alternatively, the first light-emitting epitaxial layer 1111 can be provided and fixed on the first growth substrate 160 by transfer, or other ways, which will not be listed one by one in this embodiment. The P-type semiconductor layer of the first light-emitting epitaxial layer 1111 is away from the first growth substrate 160, and the N-type semiconductor layer of the first light-emitting epitaxial layer 1111 is close to the first growth substrate 160.

[0103] Further, the first light-emitting epitaxial layer 1111 can be etched to form a plurality of first light-emitting units 111 arranged in an array.

[0104] S130: forming a plurality of first pixel electrodes 114 corresponding to the plurality of first light-emitting units on the side away from the first growth substrate.

[0105] One first pixel electrode 114 is formed on each first light-emitting unit 111, wherein the first pixel electrode 114 realizes ohmic contact with the P-type semiconductor in the first light-emitting unit 111.

[0106] S140: forming a first transparent dielectric layer in at least the interval between the plurality of first light-emitting units, and etching part of the interval.

[0107] Specifically, referring to Figure 8 and Figure 9 a first transparent dielectric layer 113 is formed in the interval between the plurality of first light-emitting units 111, and part of the interval between the adjacent first light-emitting units 111 is etched corresponding to the first transparent dielectric layer 113.

[0108] S150: forming a first metal reflective layer surrounding the plurality of first light-emitting units in the etched part of the interval.

[0109] Specifically, reference can be made to Figure 8 and Figure 9 A grid-shaped first metal reflective layer 112 is formed in the etched partial separation region, and the grid-shaped first metal reflective layer 112 forms a plurality of first window regions 1121, and a projection of the first pixel electrode 114 along the stacking direction A falls into the corresponding first window region 1121.

[0110] Among them, please refer to Figure 8 and Figure 9 , Figure 8 The first metal reflective layer 112 is shown from one perspective, Figure 9 The first metal reflective layer 112 is shown from another perspective. In combination with Figure 8 and Figure 9 It can be seen that the first metal reflective layer 112 and the first transparent dielectric layer 113 form a first gap 1122, and the subsequent second metal transfer electrode 140 can be added in correspondence with the first gap 1122.

[0111] In some embodiments, the CMP process makes the wafer surface form a nanoscale flat surface. That is, the CMP process makes the first metal reflective layer 112 and the side of the first transparent dielectric layer 113 opposite to the first growth substrate 160 form a nanoscale flat surface.

[0112] In some embodiments, if the LED display device 1 includes a first dielectric reflective layer 117, reference can be made to Figure 8 As shown, a first dielectric reflective layer 117 can be added on the side of the first metal reflective layer 112 opposite to the first growth substrate 160.

[0113] In some embodiments, as shown in Figure 8 and Figure 9 A corresponding first dielectric bonding layer 118 can be provided on the side of the first dielectric reflective layer 117 opposite to the first metal reflective layer 112 and the first transparent dielectric layer 113, and a plurality of vias are formed through the first transparent dielectric layer 113, the first dielectric reflective layer 117 and the first dielectric bonding layer 118 in positions corresponding to the plurality of first pixel electrodes 114. Then, a first metal transfer electrode 130 is added in the plurality of vias. One end of the first metal transfer electrode 130 can be electrically connected to the first pixel electrode 114, and the other end can be exposed on the side of the first dielectric bonding layer 118 opposite to the first dielectric reflective layer 117, so that the subsequent first light-emitting layer system 110 can be fixed to the driving substrate 20 through the corresponding first metal transfer electrode 130 and the first dielectric bonding layer 118.

[0114] In some embodiments, sub-electrodes of the second metal transfer electrode 140 portion can be gradually added to the first light-emitting layer 110, and then, after the first light-emitting layer 110 is fixed to the driving substrate 20, the remaining sub-electrodes of the second metal transfer electrode 140 are added to the first light-emitting layer 110 to form the second metal transfer electrode 140.

[0115] S200: Provide a second light-emitting layer system, wherein the second light-emitting layer system includes a plurality of second light-emitting units, a second metal reflective layer, a second transparent dielectric layer and a plurality of second pixel electrodes. The plurality of second light-emitting units are arranged in an array at intervals. The plurality of second pixel electrodes are correspondingly disposed on one side of the plurality of second light-emitting units. The second metal reflective layer is disposed in the interval area between the plurality of second light-emitting units and surrounds each second light-emitting unit. The second transparent dielectric layer is disposed between the second light-emitting unit and the second metal reflective layer.

[0116] Specifically, a second growth substrate 170 can be provided, on which a second light-emitting layer 120 is formed. The preparation process of the second light-emitting layer 120 can be referred to steps S110-S150, and will not be described in detail here.

[0117] In some embodiments, a third dielectric bonding layer 125 is covered on one side of a plurality of second pixel electrodes 124 in the second light-emitting layer system 120.

[0118] S300: The first light-emitting layer and the second light-emitting layer are sequentially stacked on the driving substrate, so that the projections of the multiple second light-emitting units along the stacking direction A fall into the projections of the corresponding first metal reflective pattern along the stacking direction A.

[0119] Specifically, such as Figure 10 As shown, a driving substrate 20 is provided. The driving substrate 20 may include a substrate body 210, a plurality of power supply electrodes 220, and a fourth dielectric bonding layer 230 filled between the plurality of power supply electrodes 220. The plurality of power supply electrodes 220 are positioned corresponding to a plurality of first metal transition electrodes 130 and a plurality of second metal transition electrodes 140. The substrate body 210 may be a CMOS (Complementary Metal Oxide Semiconductor) substrate. Related circuits and a plurality of switching devices (not shown) corresponding to each display pixel may be disposed inside the substrate body. The plurality of power supply electrodes 220 are disposed on the substrate body and electrically connected to the plurality of switching devices.

[0120] As an example, the power supply electrode 220 can be made of metal copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO), or other materials with electrical conductivity. The fourth dielectric bonding layer 230 can be an oxide layer made of silicon dioxide, silicon nitride, or other insulating materials.

[0121] In some embodiments, the step S300 comprises a step S310:

[0122] S310: fixing the plurality of first pixel electrodes and the first metal reflective layer on the side away from the first growth substrate to the driving substrate, and removing the first growth substrate.

[0123] Specifically, the first light emitting layer system 110 is placed on the driving substrate 20 in a manner that the first dielectric reflective layer 117 and the first metal transfer electrode 130 face the driving substrate 20, wherein the plurality of first metal transfer electrodes 130 correspond to the corresponding power supply electrodes 220, and the first dielectric reflective layer 117 corresponds to the fourth dielectric bonding layer 230. The sub-electrodes of the second metal transfer electrode 140 also correspond to a part of the power supply electrodes 220. Then, the TCB (Thermal Compression Bonding) process can be further used to bond the first metal transfer electrode 130 and the corresponding power supply electrode 220 to each other, and the sub-electrodes of the second metal transfer electrode 140 are also bonded to the corresponding power supply electrode 220, so that the first dielectric reflective layer 117 and the fourth dielectric bonding layer 230 are bonded to each other. Alternatively, a normal temperature bonding process is used to achieve hybrid bonding of the first light emitting layer system 110 and the driving substrate 20, thereby achieving high-strength connection of the driving substrate 20 and the first light emitting layer system 110.

[0124] Then, the first growth substrate 160 can be removed by grinding, chemical etching, or laser lift-off (LLO) process to expose the plurality of first light emitting units 111.

[0125] In some embodiments, the manufacturing method further comprises:

[0126] S320: forming a plurality of first metal reflective patterns on the other side of the plurality of first light emitting units away from the driving substrate.

[0127] In some embodiments, the manufacturing method further comprises: Figure 10As shown, on the side of the plurality of first light emitting units 111 opposite to the driving substrate 20, a plurality of first metal reflection patterns 115 are arranged corresponding to the positions of the plurality of first light emitting units 111, and the plurality of first metal reflection patterns 115 are electrically connected with the N-type semiconductor layer in the corresponding first light emitting unit 111. Further, the first metal reflection pattern 115 and the first metal reflection layer 112 can be connected by electrodes or wires, so that each first metal reflection pattern 115 is electrically connected with the first metal reflection layer 112.

[0128] Further, as shown, Figure 10 the second dielectric bonding layer 119 can be arranged on the side of the first metal reflection pattern 115 away from the first light emitting unit 111.

[0129] In some embodiments, as shown, Figure 11 the first transparent dielectric layer 113 in the first gap 1122 can be etched on the side of the second dielectric bonding layer 119 away from the first metal reflection pattern 115, and then the remaining sub-electrodes of the second metal transfer electrode 140 are added in the first gap 1122, so as to form the second metal transfer electrode 140 in the first light emitting layer system 110, and the second metal transfer electrode 140 is electrically isolated from the first light emitting layer system 110, and the second metal transfer electrode 140 is electrically connected with the corresponding power supply electrode 220. Wherein, Figure 11 the screenshot view is different from the screenshot view shown in Figure 10 , i.e. Figure 11 the first metal reflection layer 112 in Figure 10 is another view of the first metal reflection layer 112 shown in

[0130] In some embodiments, as shown, Figure 11 the second light emitting layer system 120 can also be fixed to the first light emitting layer system 110 in a hybrid bonding manner. The second light emitting layer system 120 can include a fourth metal transfer electrode 129, one end of which is electrically connected with the second pixel electrode 124, and one end is exposed on the side of the third dielectric bonding layer 125 opposite to the second light emitting unit 121. Wherein, the position of the fourth metal transfer electrode 129 corresponds to the second metal transfer electrode 140.

[0131] Furthermore, the second light-emitting layer 120 can be placed on the first light-emitting layer 110 with the fourth metal transfer electrode 129 corresponding to the second metal transfer electrode 140 and the third dielectric bonding layer 125 corresponding to the second dielectric bonding layer 119. Then, a hybrid bonding process can be used to bond the fourth metal transfer electrode 129 to the corresponding second metal transfer electrode 140, and the third dielectric bonding layer 125 to the second dielectric bonding layer 119, thereby achieving a bonding connection between the first light-emitting layer 110 and the second light-emitting layer 120. The second pixel electrode 124 in the second light-emitting layer 120 can be electrically connected to the power supply electrode 220 of the driving substrate 20 through the fourth metal transfer electrode 129 and the second metal transfer electrode 140.

[0132] The second growth substrate 170 can then be removed by processes such as grinding, chemical etching, or laser lift-off (LLO) to expose multiple second light-emitting units 121.

[0133] In some embodiments, referring to the formation of the second light-emitting layer 120, a third light-emitting layer 150 may be added to the side of the second light-emitting layer 120 that is away from the first light-emitting layer 110.

[0134] Specifically, such as Figure 12 As shown, a second metal reflective pattern 127 and a dielectric bonding layer can be added to the side of the second light-emitting unit 121 away from the first light-emitting layer system 110. Furthermore, transfer electrodes can be pre-set in the first light-emitting layer system 110 and the second light-emitting layer system 120 to bond with each other. When the third light-emitting layer system 150 is bonded to the second light-emitting layer system 120, the transfer electrodes corresponding to the third pixel electrode 154 in the third light-emitting layer system 150 are sequentially electrically connected to a portion of the power supply electrode 220 of the driving substrate 20.

[0135] The specific method of forming and adding the third light-emitting layer 150 can refer to the method of forming the second light-emitting layer 120 described above, and will not be described in detail here in this embodiment.

[0136] In summary, the LED display device 1 of this application is provided with a first light-emitting layer system 110 and a second light-emitting layer system 120 stacked sequentially along the stacking direction A. The first pixel electrodes 114 and the first metal reflection patterns 115 of the first light-emitting layer system 110 are respectively disposed on both sides of the multiple first light-emitting units 111. The first transparent dielectric layer 113 and the first metal reflection layer 112 in the first light-emitting layer system 110 are sequentially surrounding each first light-emitting unit 111. Since the first metal reflection pattern 115 and the first metal reflection layer 112 have a reflective effect, the light from the multiple first light-emitting units 111 will be emitted from the first transparent dielectric layer 113. Furthermore, the projections of the multiple second light-emitting units 121 of the second light-emitting layer 120 along the stacking direction A fall into the projections of the corresponding first metal reflective pattern 115 along the stacking direction A. Therefore, when the light from the first light-emitting unit 111 is directed toward the second light-emitting unit 121 along the stacking direction A, most of the light is reflected back to the first light-emitting unit 111 by the first metal reflective pattern 115. This allows most of the light from the first light-emitting unit 111 to be concentrated and emitted from the first transparent dielectric layer 113, without passing through the second light-emitting unit 121 and causing crosstalk in light colors. Most of the light generated by the second light-emitting unit 121 is also reflected by the first metal reflective pattern 115 and does not pass through the first light-emitting unit 111. This makes it less likely for the light generated by the first light-emitting unit 111 and the second light-emitting unit 121 to cause color crosstalk, thereby improving the display contrast of different light colors in the LED display device 1 and reducing light loss. Furthermore, the second transparent dielectric layer 123 and the second metal reflective layer 122 of the second light-emitting layer system 120 also surround each second light-emitting unit 121 in sequence. The second metal reflective layer 122 can also reflect the light from the second light-emitting unit 121, thereby improving the light output collimation and optical efficiency of the LED display device 1.

[0137] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. An LED display device, characterized in that, The LED display device includes a driving substrate and a display substrate stacked along a predetermined stacking direction. The display substrate includes a first light-emitting layer system and a second light-emitting layer system sequentially stacked on the driving substrate along the stacking direction. The first light-emitting layer system includes a plurality of first light-emitting units, a first metal reflective layer, a first transparent dielectric layer, a plurality of first pixel electrodes, and a plurality of first metal reflective patterns. The plurality of first light-emitting units are arranged in an array at intervals. The plurality of first pixel electrodes and the plurality of first metal reflective patterns are respectively disposed on the side of the plurality of first light-emitting units facing the driving substrate and the other side away from the driving substrate. The first metal reflective layer is disposed in the interval area between the plurality of first light-emitting units and surrounds each first light-emitting unit. The first transparent dielectric layer is disposed between the first light-emitting unit and the first metal reflective layer, forming a first light-emitting area between each first metal reflective pattern and the first metal reflective layer. The second light-emitting layer system includes a plurality of second light-emitting units, a second metal reflective layer, a second transparent dielectric layer, and a plurality of second pixel electrodes. The plurality of second light-emitting units are arranged in an array at intervals. The plurality of second pixel electrodes are correspondingly disposed on the side of the plurality of second light-emitting units facing the driving substrate. The second metal reflective layer is disposed in the interval area between the plurality of second light-emitting units and surrounds each second light-emitting unit. The second transparent dielectric layer is disposed between the second light-emitting units and the second metal reflective layer. The projections of the plurality of second light-emitting units along the stacking direction fall into the projections of the corresponding first metal reflective pattern along the stacking direction.

2. The LED display device according to claim 1, characterized in that, The first metal reflective layer is arranged in a grid pattern, and the plurality of first metal reflective patterns are electrically connected to the first metal reflective layer and are used to provide a common voltage to the plurality of first light-emitting units.

3. The LED display device according to claim 1, characterized in that, The first transparent dielectric layer further covers the side of the plurality of first light-emitting units and the plurality of first pixel electrodes facing the driving substrate; The first metal reflective layer is provided with a plurality of first window regions corresponding to the plurality of first pixel electrodes respectively, and the projection of the first pixel electrode along the stacking direction falls into the corresponding first window region; The first light-emitting layer system further includes a first dielectric reflective layer, which covers the first metal reflective layer and the first transparent dielectric layer exposed through the first window area from the side facing the driving substrate.

4. The LED display device according to claim 3, characterized in that, The reflectivity of the first metal reflective pattern is not less than the reflectivity of the first dielectric reflective layer.

5. The LED display device according to claim 3, characterized in that, The first light-emitting layer further includes a first dielectric bonding layer covering the first dielectric reflective layer from the side facing the driving substrate. The display substrate further includes a plurality of first metal transfer electrodes penetrating the first dielectric bonding layer and the first dielectric reflective layer and electrically connected to the plurality of first pixel electrodes respectively. The first dielectric bonding layer and the plurality of first metal transfer electrodes are bonded to the driving substrate in a hybrid bonding manner. The plurality of first metal transfer electrodes are further electrically connected to the driving substrate to provide driving voltages to the plurality of first pixel electrodes respectively.

6. The LED display device according to claim 5, characterized in that, The first light-emitting layer system and the second light-emitting layer system each include a second dielectric bonding layer and a third dielectric bonding layer on their adjacent sides. The second dielectric bonding layer and the third dielectric bonding layer are bonded to each other to fix the second light-emitting layer system onto the first light-emitting layer system.

7. The LED display device according to claim 1, characterized in that, The display substrate further includes a plurality of second metal transition electrodes penetrating the first light-emitting layer system. The plurality of second pixel electrodes are electrically connected to the driving substrate via the plurality of second metal transition electrodes to provide driving voltage to the plurality of second pixel electrodes respectively.

8. The LED display device according to claim 7, characterized in that, The first metal reflective layer is further provided with a plurality of first notches, and the plurality of second metal transition electrodes are respectively provided in the plurality of first notches.

9. The LED display device according to claim 1, characterized in that, The second light-emitting layer system further includes a plurality of second metal reflection patterns, which respectively cover the side of the plurality of second light-emitting units away from the driving substrate, and form a second light-emitting area between each second metal reflection pattern and the second metal reflection layer.

10. The LED display device according to claim 9, characterized in that, The second metal reflective layer is arranged in a grid pattern, and the plurality of second metal reflective patterns are electrically connected to the second metal reflective layer and are used to provide a common voltage to the plurality of second light-emitting units. The second metal reflective layer is electrically connected to the first metal reflective layer.

11. The LED display device according to claim 9, characterized in that, The display substrate further includes a third light-emitting layer system stacked on the side of the second light-emitting layer system facing away from the first light-emitting layer system; The third light-emitting layer system includes a plurality of third light-emitting units, a third metal reflective layer, a third transparent dielectric layer, and a plurality of third pixel electrodes. The plurality of third light-emitting units are arranged in an array at intervals. The plurality of third pixel electrodes are correspondingly disposed on the side of the plurality of third light-emitting units facing the driving substrate. The third metal reflective layer is disposed in the interval area between the plurality of third light-emitting units and surrounds each of the third light-emitting units. The third transparent dielectric layer is disposed between the third light-emitting units and the third metal reflective layer. The projections of the plurality of third light-emitting units along the stacking direction fall within the projection of the corresponding second metal reflective pattern.

12. A method for manufacturing an LED display device, characterized in that, The manufacturing method includes: A first light-emitting layer system is provided, wherein the first light-emitting layer system includes a plurality of first light-emitting units, a first metal reflective layer, a first transparent dielectric layer, a plurality of first pixel electrodes, and a plurality of first metal reflective patterns. The plurality of first light-emitting units are arranged in an array at intervals. The plurality of first pixel electrodes and the plurality of first metal reflective patterns are respectively disposed on both sides of the plurality of first light-emitting units in the stacking direction. The first metal reflective layer is disposed in the interval area between the plurality of first light-emitting units and surrounds each first light-emitting unit. The first transparent dielectric layer is disposed between the first light-emitting unit and the first metal reflective layer, and a first light-emitting area is formed between each first metal reflective pattern and the first metal reflective layer. A second light-emitting layer system is provided, wherein the second light-emitting layer system includes a plurality of second light-emitting units, a second metal reflective layer, a second transparent dielectric layer and a plurality of second pixel electrodes. The plurality of second light-emitting units are arranged in an array at intervals. The plurality of second pixel electrodes are correspondingly disposed on one side of the plurality of second light-emitting units. The second metal reflective layer is disposed in the interval area between the plurality of second light-emitting units and surrounds each second light-emitting unit. The second transparent dielectric layer is disposed between the second light-emitting unit and the second metal reflective layer. The first light-emitting layer and the second light-emitting layer are sequentially stacked on the driving substrate, such that the projections of the plurality of second light-emitting units along the stacking direction fall into the projections of the corresponding first metal reflective pattern along the stacking direction.

13. The manufacturing method according to claim 12, characterized in that, The provision of the first light-emitting layer system includes: Provide the first growth substrate; A first light-emitting epitaxial layer is formed on the first growth substrate and patterned to form a plurality of first light-emitting units arranged in an array at intervals. Multiple first pixel electrodes are formed on the side of the multiple first light-emitting units that are away from the first growth substrate; A first transparent dielectric layer is formed at least in the spacer region between the plurality of first light-emitting units, and a portion of the spacer region is etched. A first metal reflective layer is formed within the etched interval region, respectively surrounding the plurality of first light-emitting units; The step of sequentially stacking the first light-emitting layer and the second light-emitting layer on the driving substrate includes: The plurality of first pixel electrodes and the first metal reflective layer are fixed to the driving substrate on the side opposite to the first growth substrate, and the first growth substrate is removed. The provision of the first light-emitting layer system further includes: The plurality of first metal reflection patterns are formed on the side of the plurality of first light-emitting units opposite to the driving substrate.

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